CN112359343A - Gas inlet device of semiconductor process equipment and semiconductor process equipment - Google Patents
Gas inlet device of semiconductor process equipment and semiconductor process equipment Download PDFInfo
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- CN112359343A CN112359343A CN202011050820.3A CN202011050820A CN112359343A CN 112359343 A CN112359343 A CN 112359343A CN 202011050820 A CN202011050820 A CN 202011050820A CN 112359343 A CN112359343 A CN 112359343A
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- 238000000034 method Methods 0.000 title claims abstract description 227
- 230000008569 process Effects 0.000 title claims abstract description 226
- 239000004065 semiconductor Substances 0.000 title claims abstract description 61
- 230000002093 peripheral effect Effects 0.000 claims description 15
- 238000007789 sealing Methods 0.000 claims description 12
- 238000004891 communication Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 13
- 235000012431 wafers Nutrition 0.000 description 40
- 239000010408 film Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4558—Perforated rings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention provides a gas inlet device of semiconductor process equipment and the semiconductor process equipment, wherein the gas inlet device of the semiconductor process equipment comprises a first gas inlet assembly and a second gas inlet assembly, the first gas inlet assembly is arranged at a gas inlet end of a process chamber of the semiconductor process equipment and comprises a first gas inlet part and a first gas inlet pipe communicated with the first gas inlet part, the second gas inlet assembly comprises a second gas inlet part and a second gas inlet pipe communicated with the second gas inlet part, the first gas inlet pipe and the second gas inlet pipe are respectively used for conveying process gas into the process chamber through the first gas inlet part and the second gas inlet part, and the second gas inlet pipe penetrates through the first gas inlet part and is communicated with the second gas inlet part. The gas inlet device of the semiconductor process equipment and the semiconductor process equipment can improve the gas inlet amount of the process gas so as to improve the capacity of conveying the process gas, thereby improving the uniformity of a film on a wafer, improving the yield of products and improving the process effect.
Description
Technical Field
The invention relates to the technical field of semiconductor equipment, in particular to an air inlet device of semiconductor process equipment and the semiconductor process equipment.
Background
Currently, a horizontal Low Pressure Chemical Vapor Deposition (LPCVD) apparatus is an important apparatus for manufacturing solar cells. The traditional horizontal low-pressure chemical vapor deposition equipment comprises a process chamber and an air inlet component positioned at the front end of the process chamber, wherein the air inlet component is annular, and a plurality of air inlets are arranged on the inner peripheral wall of the air inlet component at intervals. In the low-pressure chemical vapor deposition process, a wafer boat carries a plurality of wafers and is positioned in a process chamber, process gas enters the process chamber from a plurality of gas inlet holes of a gas inlet part, and the process gas reacts with the surfaces of the wafers and deposits films in a high-temperature environment.
However, as the size of the wafers increases and the number of wafers on the wafer boat increases during a single process, the ability of the conventional gas inlet assembly to deliver process gas cannot meet the existing process requirements, resulting in non-uniform film thickness of the thin film deposited on the wafers.
Disclosure of Invention
The invention aims to at least solve one of the technical problems in the prior art, and provides a gas inlet device of semiconductor process equipment and the semiconductor process equipment, which can improve the gas inlet amount of process gas so as to improve the capacity of conveying the process gas, thereby improving the uniformity of a film on a wafer, improving the yield of products and improving the process effect.
The gas inlet device of the semiconductor processing equipment comprises a first gas inlet assembly arranged at a gas inlet end of a process chamber of the semiconductor processing equipment, wherein the first gas inlet assembly comprises a first gas inlet part and a first gas inlet pipe communicated with the first gas inlet part, the first gas inlet pipe is used for conveying process gas into the process chamber through the first gas inlet part, the gas inlet device further comprises a second gas inlet assembly, the second gas inlet assembly comprises a second gas inlet part and a second gas inlet pipe communicated with the second gas inlet part, the second gas inlet pipe is used for conveying the process gas into the process chamber through the second gas inlet part, and the second gas inlet pipe is communicated with the second gas inlet part through the first gas inlet part.
Preferably, the first air inlet part is annular, and a plurality of first air inlet holes are arranged on the inner peripheral wall of the first air inlet part at intervals;
the second air inlet part is annular, and a plurality of second air inlets are formed in the inner peripheral wall of the second air inlet part at intervals.
Preferably, the first air inlet part is annular, and a plurality of first air inlet holes are arranged on the inner peripheral wall of the first air inlet part at intervals;
the second air inlet part is arc-shaped, and a plurality of second air inlets are formed in the inner wall of the second air inlet part at intervals.
Preferably, the first air intake part surrounds the second air intake part and is connected to the second air intake part.
Preferably, the air inlet device further comprises a clamping component, wherein the clamping component is arranged on the first air inlet component and used for clamping the second air inlet component.
Preferably, the second air intake assembly further comprises a joint member, a through hole for the joint member to pass through is formed in the peripheral wall of the first air intake assembly, and the joint member passes through the through hole, is respectively communicated with the second air intake part and the second air intake pipe, and is used for guiding the process gas conveyed by the second air intake pipe into the second air intake part.
Preferably, the joint part comprises a joint body and an adapter, wherein the adapter is communicated with the second air inlet part, and the joint body is respectively communicated with the adapter and the second air inlet pipe.
Preferably, the adaptor comprises a three-way adaptor, one end of the three-way adaptor is communicated with the connector body, and the other two ends of the three-way adaptor are respectively communicated with the second gas inlet component, so that the process gas conveyed to the second gas inlet component flows in different directions in the second gas inlet component.
Preferably, the joint part still includes the adapter, the adapter respectively with connect the body with the second intake pipe intercommunication, connect the body with be provided with the sealing member between the adapter, the sealing member be used for right connect the body with seal between the adapter, in order to avoid from the adapter carry extremely connect the body process gas leaks.
The invention also provides semiconductor processing equipment which comprises a process chamber and the gas inlet device, wherein the gas inlet device is arranged at the gas inlet end of the process chamber and used for conveying process gas into the process chamber, and the gas inlet device provided by the invention is adopted.
The invention has the following beneficial effects:
the invention provides a gas inlet device of semiconductor process equipment, which comprises a first gas inlet assembly and a second gas inlet assembly, wherein the first gas inlet assembly comprises a first gas inlet part and a first gas inlet pipe communicated with the first gas inlet part, the first gas inlet pipe is used for conveying process gas into a process chamber through the first gas inlet part, the second gas inlet assembly comprises a second gas inlet part and a second gas inlet pipe communicated with the second gas inlet part, the second gas inlet pipe is used for conveying the process gas into the process chamber through the second gas inlet part, the process gas is conveyed into the process chamber by the second gas inlet assembly and the first gas inlet assembly together, compared with the process gas conveyed into the process chamber only through the first gas inlet assembly, the gas inlet amount of the process gas can be improved, so that the capacity of conveying the process gas into the process chamber is improved, the size of a wafer can be continuously increased, and in a primary semiconductor process, under the trend that the number of wafers is continuously increased, the requirement of a semiconductor process on the air inflow of process gas is met, so that the uniformity of a film on the wafer is improved, the product yield is improved, and the process effect is improved.
The semiconductor process equipment provided by the invention has the advantages that by means of the gas inlet device of the semiconductor process equipment provided by the invention, the gas inlet amount of the process gas can be increased, and the capacity of conveying the process gas is improved, so that the uniformity of a film on a wafer is improved, the yield of products is improved, and the process effect is improved.
Drawings
FIG. 1 is a schematic structural diagram of a gas inlet device of semiconductor processing equipment and the semiconductor processing equipment provided by an embodiment of the invention;
FIG. 2 is a schematic structural diagram of a first gas inlet assembly of a gas inlet apparatus of semiconductor processing equipment according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a second gas inlet assembly of a gas inlet apparatus of semiconductor processing equipment according to an embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view taken along line A-A of FIG. 3;
FIG. 5 is a schematic structural diagram of a gas inlet device of semiconductor processing equipment according to an embodiment of the present invention;
FIG. 6 is a schematic structural diagram of a coupling member of an air inlet device of semiconductor processing equipment according to an embodiment of the present invention;
FIG. 7 is an enlarged view of the structure of FIG. 5 at detail B;
description of reference numerals:
1-a process chamber; 2-an air intake device; 21-a first air intake component; 211-a first intake aperture; 212-a first annular channel; 22-a first inlet duct; 23-a second air intake component; 231-second air intake holes; 232-a second annular channel; 24-a tab portion; 241-a joint body; 242-an adaptor; 243-sealing ring; 25-an adapter; 26-a second inlet line; 27-a snap-in part; 3-wafer.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the gas inlet device of the semiconductor processing equipment and the semiconductor processing equipment provided by the present invention are described in detail below with reference to the accompanying drawings.
As shown in fig. 1 and 5, the present embodiment provides a gas inlet device 2 of semiconductor processing equipment, which includes a first gas inlet assembly disposed at a gas inlet end of a process chamber 1 of the semiconductor processing equipment, where the first gas inlet assembly includes a first gas inlet part 21 and a first gas inlet pipe 22 communicated with the first gas inlet part 21, the first gas inlet pipe 22 is used for delivering a process gas into the process chamber 1 through the first gas inlet part 21, the gas inlet device 2 further includes a second gas inlet assembly, the second gas inlet assembly includes a second gas inlet part 23 and a second gas inlet pipe 26 communicated with the second gas inlet part 23, the second gas inlet pipe 26 is used for delivering the process gas into the process chamber 1 through the second gas inlet part 23, and the second gas inlet pipe 26 is communicated with the second gas inlet part 23 through the first gas inlet part 21.
The gas inlet device 2 of the semiconductor processing equipment provided by the embodiment comprises a first gas inlet assembly and a second gas inlet assembly, wherein the first gas inlet assembly comprises a first gas inlet part 21 and a first gas inlet pipe 22 communicated with the first gas inlet part 21, the first gas inlet pipe 22 is used for conveying process gas into the process chamber 1 through the first gas inlet part 21, the second gas inlet assembly comprises a second gas inlet part 23 and a second gas inlet pipe 26 communicated with the second gas inlet part 23, the second gas inlet pipe 26 is used for conveying the process gas into the process chamber 1 through the second gas inlet part 23, the process gas is conveyed into the process chamber 1 together with the first gas inlet assembly through the second gas inlet assembly, compared with the process gas conveyed into the process chamber 1 only through the first gas inlet assembly, the gas inlet amount of the process gas can be increased, the capacity of conveying the process gas into the process chamber 1 is improved, and the size of the wafer 3 can be increased continuously, and in a semiconductor process, the requirement of the semiconductor process on the air inflow of process gas is met under the trend that the number of the wafers 3 is continuously increased, so that the uniformity of the film on the wafers 3 is improved, the yield of products is improved, and the process effect is improved.
Specifically, one end of the first gas inlet pipe 22 is communicated with a gas source (not shown in the figure) for providing a process gas, the other end of the first gas inlet pipe is communicated with the first gas inlet part 21 for delivering the process gas provided by the gas source into the first gas inlet part 21, and then the first gas inlet part 21 delivers the process gas into the process chamber 1, one end of the second gas inlet pipe 26 is communicated with the gas source for providing the process gas, and the other end of the second gas inlet pipe passes through the first gas inlet part 21 and is communicated with the second gas inlet part 23 for delivering the process gas provided by the gas source into the second gas inlet part 23, and then the second gas inlet part 23 delivers the process gas into the process chamber 1. In the process of conveying the process gas from the gas source into the process chamber 1, the process gas provided by the gas source is respectively conveyed into the first gas inlet pipe 22 and the second gas inlet pipe 26, the first gas inlet pipe 22 and the second gas inlet pipe 26 respectively convey the process gas in the process gas to the first gas inlet part 21 and the second gas inlet part 23, and the first gas inlet part 21 and the second gas inlet part 23 respectively convey the process gas in the process chamber 1, so that the second gas inlet assembly and the first gas inlet assembly convey the process gas into the process chamber 1 in the same direction.
As shown in fig. 2, in a preferred embodiment of the present invention, the first air inlet part 21 may be ring-shaped, and a plurality of first air inlet holes 211 are spaced on an inner circumferential wall of the first air inlet part 21.
As shown in fig. 1 and 2, for example, in a horizontal cvd apparatus, a process chamber 1 is disposed laterally, a plurality of wafers 3 are arranged in the process chamber 1 in sequence along the lateral direction, a gas inlet end and a gas outlet end of the process chamber 1 are laterally opposite to each other, and a gas inlet device 2 is disposed at the gas inlet end, so that a process gas can flow through the process chamber 1 laterally during a semiconductor process. Through setting the first air inlet part 21 to be annular, and set up a plurality of first air inlet holes 211 on the internal perisporium of first air inlet part 21 at interval, on the one hand can make the process gas that transports to the process chamber 1 through first air inlet part 21 can even distribution in the process chamber 1 to can be even around a plurality of wafers 3, so that each wafer 3 can even deposit the film, thereby further improve the homogeneity of film on wafer 3, improve the product yield, improve technological effect. On the other hand, the process gas conveyed into the process chamber 1 by the first gas inlet component 21 can be prevented from directly blowing to the surface of the wafer 3 close to the gas inlet end, so that the wafer 3 is prevented from being toppled and collided with the adjacent wafer 3 under the action of the process gas, the damage of the wafers 3 is avoided, and the use stability of the gas inlet device 2 of the semiconductor process equipment is improved.
However, the first gas inlet member 21 has a ring shape, so that the amount of gas taken in the first gas inlet member 21 is limited, and the capacity of the first gas inlet member 21 to deliver the process gas is limited. And by means of the second air inlet assembly and the first air inlet assembly, the air can be conveyed into the process chamber 1 in the same direction, compared with the method that the air is conveyed into the process chamber 1 only by the first air inlet assembly, the air inflow of the process air can be improved, so that the capacity of conveying the process air into the process chamber 1 is improved, the requirement of the semiconductor process on the air inflow of the process air can be met under the trend that the size of the wafer 3 is continuously increased and the number of the wafers 3 in the primary semiconductor process is continuously increased, the uniformity of the film on the wafer 3 is improved, the product yield is improved, and the process effect is improved.
As shown in fig. 2, in a preferred embodiment of the present invention, a first annular channel 212 may be disposed inside the first air inlet part 21, the first annular channel 212 is communicated with all the first air inlet holes 211, one end of the first air inlet pipe 22 penetrates through the first air inlet part 21 and is communicated with the first annular channel 212 to achieve communication between the first air inlet pipe 22 and the first air inlet part 21, and the other end of the first air inlet pipe 22 is communicated with an air source for providing the process gas. In the process of delivering the process gas from the gas source into the process chamber 1, the process gas provided by the gas source is first delivered into the first annular channel 212 through the first gas inlet pipe 22, then flows to the first gas inlet holes 211 through the first annular channel 212, and finally is delivered into the process chamber 1 through the first gas inlet holes 211, so that the process gas is delivered into the process chamber 1 through the first gas inlet part 21 by the first gas inlet pipe 22.
Optionally, the first gas inlet assembly may comprise a plurality of first gas inlet pipes 22, and the plurality of first gas inlet pipes 22 are distributed at intervals along the circumferential direction of the first gas inlet part 21 to increase the speed of the process gas delivered into the first gas inlet part 21, so as to increase the capacity of the first gas inlet assembly to deliver the process gas into the process chamber 1.
Preferably, the plurality of first intake pipes 22 are evenly spaced along the circumferential direction of the first intake member 21.
Alternatively, the plurality of first intake holes 211 may be spaced apart along the circumferential direction of the first air intake part 21.
Preferably, the plurality of first air intake holes 211 may be evenly spaced along the circumferential direction of the first air intake part 21.
In a preferred embodiment of the present invention, as shown in fig. 5, the first air intake part 21 may surround the second air intake part 23 and be connected to the second air intake part 23.
Specifically, for example, if the first air intake member 21 has a ring shape, the second air intake member 23 may have a ring shape, and the outer diameter of the second air intake member 23 may be smaller than the inner diameter of the first air intake member 21 so that the first air intake member 21 can surround the second air intake member 23. Therefore, on one hand, the process gas flowing out of the plurality of first gas inlet holes 211 is closer to the process gas flowing out of the plurality of second gas inlet holes 231, so that the distribution uniformity of the process gas conveyed into the process chamber 1 from the first gas inlet part 21 and the second gas inlet part 23 in the process chamber 1 is improved, the uniformity of the film on the wafer 3 is further improved, the product yield is improved, and the process effect is improved. On the other hand, a connecting structure for connecting the second gas inlet part 23 does not need to be separately arranged at the gas inlet end of the process chamber 1, and the second gas inlet part 23 does not need to be separately arranged at the gas inlet end of the process chamber 1, so that the installation of the gas inlet device 2 of the semiconductor process equipment is facilitated.
In a preferred embodiment of the present invention, when the first air inlet member 21 surrounds the second air inlet member 23, the second air inlet member 23 is disposed in a staggered manner with respect to the first air inlet member 21 in the axial direction of the first air inlet member 21, that is, any radial cross section of the second air inlet member 23 is not overlapped with any radial cross section of the first air inlet member 21, so as to prevent the second air inlet member 23 from blocking the first air inlet holes 211 on the first air inlet member 21, which may result in the first air inlet holes 211 not delivering the process gas into the process chamber 1 smoothly. Or, when the first gas inlet part 21 surrounds the second gas inlet part 23, a predetermined distance is formed between the inner peripheral wall of the first gas inlet part 21 and the outer peripheral wall of the second gas inlet part 23, so as to prevent the second gas inlet part 23 from blocking the first gas inlet holes 211 on the first gas inlet part 21, which may cause the first gas inlet holes 211 to deliver the process gas into the process chamber 1.
As shown in fig. 2 to 4, in a preferred embodiment of the present invention, the first air inlet part 21 may be ring-shaped, and a plurality of first air inlet holes 211 are arranged on an inner circumferential wall of the first air inlet part 21 at intervals; the second air inlet member 23 may be annular, and a plurality of second air inlet holes 231 are formed in the inner circumferential wall of the second air inlet member 23 at intervals.
Through setting the second air inlet part 23 to be annular, and the plurality of second air inlet holes 231 are arranged on the inner peripheral wall of the second air inlet part 23 along the circumferential direction at intervals, on one hand, the process gas conveyed into the process chamber 1 through the second air inlet part 23 can be uniformly distributed in the process chamber 1, and can be uniformly surrounded around the plurality of wafers 3, so that each wafer 3 can uniformly deposit the thin film, the uniformity of the thin film on the wafer 3 is further improved, the product yield is improved, and the process effect is improved. On the other hand, the process gas conveyed into the process chamber 1 by the second gas inlet component 23 can be prevented from directly blowing to the surface of the wafer 3 close to the gas inlet end, so that the wafer 3 is prevented from being toppled and collided with the adjacent wafer 3 under the action of the process gas, the damage of the wafers 3 is avoided, and the use stability of the gas inlet device 2 of the semiconductor process equipment is improved.
Moreover, when the first air inlet component 21 surrounds the second air inlet component 23, the second air inlet component 23 is arranged in a ring shape, so that the air inlet amount of the second air inlet component 23 can be improved to the greatest extent, the process gas conveying capacity of the second air inlet component 23 can be improved to the greatest extent, and therefore, the requirements of the semiconductor process on the air inlet amount of the process gas can be met under the trend that the sizes of the wafers 3 are increased continuously and the number of the wafers 3 in one semiconductor process is increased continuously, the uniformity of the thin films on the wafers 3 is improved, the product yield is improved, and the process effect is improved.
Alternatively, the plurality of second intake holes 231 may be spaced apart along the circumferential direction of the second air intake part 23.
Preferably, the plurality of second air intake holes 231 may be evenly spaced along the circumferential direction of the second air intake part 23.
However, the shape of the second air inlet member 23 is not limited thereto, and in a preferred embodiment of the present invention, the first air inlet member 21 may be ring-shaped, and a plurality of first air inlet holes 211 are formed on the inner peripheral wall of the first air inlet member 21 at intervals; the second air inlet part 23 may be arc-shaped, and a plurality of second air inlet holes 231 are arranged on the inner wall of the second air inlet part 23 at intervals.
Alternatively, the second air intake member 23 may have a circular arc shape.
Preferably, the arc shape may include a semi-arc shape or a larger arc.
Alternatively, the plurality of second air intake holes 231 may be spaced apart along the extending direction of the second air intake part 23.
Preferably, the plurality of second intake holes 231 may be evenly spaced along the extending direction of the second intake part 23.
As shown in fig. 5, in a preferred embodiment of the present invention, the air intake device 2 may further include a snap-in member 27, and the snap-in member 27 is disposed on the first air intake member 21 for snap-in engagement with the second air intake member 23.
Specifically, a plurality of engaging members 27 may be provided on the inner peripheral wall of the first air intake member 21 at intervals in the circumferential direction of the first air intake member 21, and each engaging member 27 is engaged with the second air intake member 23 to connect the second air intake member 23 with the first air intake member 21.
As shown in fig. 3 and 5, in a preferred embodiment of the present invention, the second air intake assembly may further include a joint member 24, a through hole for the joint member 24 to pass through is provided on a peripheral wall of the first air intake member 21, and the joint member 24 passes through the through hole and is respectively communicated with the second air intake member 23 and the second air intake pipe 26, so as to guide the process gas delivered by the second air intake pipe 26 into the second air intake member 23.
Specifically, the second gas inlet pipe 26 is communicated with the second gas inlet part 23 through the joint part 24, and the process gas delivered by the second gas inlet pipe 26 is guided into the second gas inlet part 23, so that the process gas provided by the gas source can be delivered into the second gas inlet part 23 through the second gas inlet pipe 26, and the process gas can be delivered into the process chamber 1 through each second gas inlet hole 231 on the second gas inlet part 23. In the process of delivering the process gas from the gas source into the process chamber 1, the process gas provided by the gas source is first delivered into the joint member 24 through the second gas inlet pipe 26, then delivered into the second gas inlet member 23 through the joint member 24, then flows into the second gas inlet member 23 to the second gas inlet holes 231, and finally is delivered into the process chamber 1 through the second gas inlet holes 231.
As shown in fig. 3 to 5 and 7, in a preferred embodiment of the present invention, the second air inlet component 23 may be provided with a second annular channel 232 inside, the second annular channel 232 is communicated with all the second air inlet holes 231, and the joint component 24 may be communicated with the second annular channel 232, so that the process gas provided by the air source is delivered into the second annular channel 232 through the joint component 24, then flows to each second air inlet hole 231 through the second annular channel 232, and finally is delivered into the process chamber 1 through each second air inlet hole 231.
As shown in fig. 6 and 7, in a preferred embodiment of the present invention, the joint member 24 may include a joint body 241 and an adaptor 242, wherein the adaptor 242 communicates with the second air intake member 23, and the joint body 241 communicates with the adaptor 242 and the second air intake pipe 26, respectively.
Specifically, in the process of delivering the process gas from the gas source into the process chamber 1, the process gas provided by the gas source is first delivered into the joint body 241 through the second gas inlet pipe 26, then delivered into the adaptor 242 through the joint body 241, then delivered into the second gas inlet part 23 through the adaptor 242, then flows into the second gas inlet part 23 to the second gas inlet holes 231, and finally delivered into the process chamber 1 through the second gas inlet holes 231.
As shown in fig. 6 and 7, in a preferred embodiment of the present invention, the adaptor 242 may include a three-way adaptor tube, one end of which is communicated with the adaptor body 241, and the other two ends of which are respectively communicated with the second gas inlet part 23, for enabling the process gas delivered into the second gas inlet part 23 to flow in different directions in the second gas inlet part 23.
The joint body 241 and the second air inlet part 23 are respectively connected through the three-way adapter tube, so that the process gas conveyed to the second air inlet part 23 from the three-way adapter tube can be conveyed to the second air inlet part 23 along different directions, and the process gas can flow in the second air inlet part 23 along different directions, thereby increasing the diffusion speed of the process gas in the second air inlet part 23, further increasing the capacity of conveying the process gas into the process chamber 1, further increasing the uniformity of the film on the wafer 3, further increasing the product yield, and improving the process effect.
Specifically, in the process of conveying the process gas from the gas source into the process chamber 1, the process gas provided by the gas source is firstly conveyed into the joint body 241 through the second gas inlet pipe 26, then flows into the tee-joint adapter pipe through one end of the tee-joint adapter pipe communicated with the joint body 241, then flows into the second gas inlet part 23 through the other two ends of the tee-joint adapter pipe communicated with the second gas inlet part 23 along different directions, flows into the second gas inlet holes 231 in the second gas inlet part 23 along different directions, and finally is conveyed into the process chamber 1 through the second gas inlet holes 231.
Optionally, the joint body 241 and the three-way adapter tube may be connected by welding.
In a preferred embodiment of the present invention, the joint member 24 may further include an adapter 25, the adapter 25 is respectively communicated with the joint body 241 and the second gas inlet pipe 26, and a sealing member may be disposed between the joint body 241 and the adapter 25 for sealing between the joint body 241 and the adapter 25 so as to prevent the process gas delivered from the adapter 25 to the joint member 24 from leaking, so as to improve the sealing performance and the safety of the gas inlet device 2 of the semiconductor process equipment.
Specifically, the second air inlet pipe 26 and the joint body 241 are connected through the adapter 25, so that the process gas in the second air inlet pipe 26 is conveyed to the joint body 241 through the adapter 25, and then the process gas is conveyed to the adapter 242 through the joint body 241. In the process of delivering the process gas from the gas source into the process chamber 1, the process gas provided by the gas source is first delivered into the adapter 25 through the second gas inlet pipe 26, then delivered into the adapter body 241 through the adapter 25, then delivered into the adapter 242 through the joint member 24, then delivered into the second gas inlet member 23 through the adapter 242, then flows into the second gas inlet member 23 to the second gas inlet holes 231, and finally delivered into the process chamber 1 through the second gas inlet holes 231.
Alternatively, the adapter 25 may be welded in the through hole to be sealed with the through hole, and when the first air inlet part 21 and the second air inlet part 23 are installed, the adapter body 241 is inserted into the through hole and inserted into the adapter 25, so that the adapter body 241 is connected to the second air inlet pipe 26 through the adapter 25.
As shown in fig. 6 and 7, optionally, the sealing element may include a sealing ring 243, and the sealing ring 243 is sleeved on the joint body 241 to seal the joint body 241 and the adapter 25 via the sealing ring 243.
As shown in fig. 1, an embodiment of the present invention further provides a semiconductor processing apparatus, which includes a process chamber 1 and a gas inlet device, wherein the gas inlet device is disposed at a gas inlet end of the process chamber 1 and is used for delivering a process gas into the process chamber 1, and the gas inlet device employs the gas inlet device 2 provided in this embodiment.
The semiconductor process equipment provided by the embodiment of the invention can improve the air inflow of the process gas and the capability of conveying the process gas by virtue of the air inlet device 2 of the semiconductor process equipment provided by the embodiment of the invention, thereby improving the uniformity of a film on a wafer 3, improving the yield of products and improving the process effect.
In summary, the gas inlet device 2 of the semiconductor processing equipment and the semiconductor processing equipment provided by the embodiment of the invention can improve the gas inlet amount of the process gas to improve the capability of conveying the process gas, thereby improving the uniformity of the film on the wafer 3, improving the product yield and improving the process effect.
It is to be understood that the above embodiments are merely exemplary embodiments that have been employed to illustrate the principles of the present invention, and that the present invention is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. The gas inlet device of the semiconductor processing equipment comprises a first gas inlet assembly arranged at a gas inlet end of a process chamber of the semiconductor processing equipment, wherein the first gas inlet assembly comprises a first gas inlet part and a first gas inlet pipe communicated with the first gas inlet part, and the first gas inlet pipe is used for conveying process gas into the process chamber through the first gas inlet part.
2. The gas inlet device of semiconductor processing equipment according to claim 1, wherein the first gas inlet part is ring-shaped, and a plurality of first gas inlet holes are arranged on the inner peripheral wall of the first gas inlet part at intervals;
the second air inlet part is annular, and a plurality of second air inlets are formed in the inner peripheral wall of the second air inlet part at intervals.
3. The gas inlet device of semiconductor processing equipment according to claim 1, wherein the first gas inlet part is ring-shaped, and a plurality of first gas inlet holes are arranged on the inner peripheral wall of the first gas inlet part at intervals;
the second air inlet part is arc-shaped, and a plurality of second air inlets are formed in the inner wall of the second air inlet part at intervals.
4. The gas inlet apparatus of semiconductor processing equipment according to claim 2 or 3, wherein the first gas inlet part surrounds the second gas inlet part and is connected to the second gas inlet part.
5. The gas inlet device of semiconductor processing equipment according to claim 4, further comprising a clamping member disposed on the first gas inlet member for clamping the second gas inlet member.
6. The gas inlet device of semiconductor process equipment according to claim 1, wherein the second gas inlet assembly further comprises a joint member, a through hole for the joint member to pass through is formed in the peripheral wall of the first gas inlet assembly, and the joint member passes through the through hole and is respectively communicated with the second gas inlet part and the second gas inlet pipe for guiding the process gas delivered by the second gas inlet pipe into the second gas inlet part.
7. The gas inlet arrangement of semiconductor processing apparatus according to claim 6, wherein the fitting assembly comprises a fitting body and an adapter, wherein the adapter is in communication with the second gas inlet section, and wherein the fitting body is in communication with the adapter and the second gas inlet conduit, respectively.
8. The gas inlet apparatus of semiconductor processing equipment according to claim 7, wherein the adapter comprises a three-way adapter tube, one end of the three-way adapter tube is communicated with the adapter body, and the other two ends of the three-way adapter tube are respectively communicated with the second gas inlet part, so that the process gas delivered to the second gas inlet part flows in different directions in the second gas inlet part.
9. The gas inlet device of semiconductor processing equipment according to claim 7, wherein the adapter part further comprises an adapter, the adapter is respectively communicated with the adapter body and the second gas inlet pipe, and a sealing member is arranged between the adapter body and the adapter and used for sealing between the adapter body and the adapter so as to prevent the process gas delivered from the adapter to the adapter body from leaking.
10. Semiconductor processing equipment, characterized by comprising a process chamber and a gas inlet device, wherein the gas inlet device is arranged at a gas inlet end of the process chamber and is used for delivering process gas into the process chamber, and the gas inlet device is as claimed in any one of claims 1 to 9.
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| CN112359343B (en) | 2022-11-25 |
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