WO2023221830A1 - Gas mixing device and semiconductor process apparatus - Google Patents

Abstract

Provided in the present invention is a gas mixing device. In gas mixing components of the gas mixing device, gas intake ends of a first gas intake channel and a second gas intake channel are respectively in communication with gas output ends of a first gas intake pipeline and a second gas intake pipeline; gas output ends of the first gas intake channel and the second gas intake channel are both in communication with an annular gas mixing channel; a gas output end of the annular gas mixing channel is used for being in communication with a process chamber of a semiconductor process apparatus; and gas output directions of the first gas intake channel and the second gas intake channel are configured to enable gases respectively flowing into the annular gas mixing channel from the gas output ends of the first gas intake channel and the second gas intake channel to both flow in a rotational manner in the same direction of the annular gas mixing channel circumferentially, when the gases are mixed. By means of the gas mixing device and the semiconductor process apparatus provided in the present invention, the gas mixing time can be shortened, and the gas mixing efficiency is thus improved; and the mixing uniformity can also be effectively improved, and the product performance is thus improved.

Description

Gas mixing device and semiconductor process equipment Technical field

The present invention relates to the field of semiconductor manufacturing, and in particular, to a gas mixing device and semiconductor process equipment.

Background technique

At present, atomic layer deposition (ALD) equipment has been widely used in semiconductor chip manufacturing processes. Its airflow-related systems mainly include air intake systems, air mixing systems, air distribution systems, and exhaust systems. The air intake method of the ALD process mainly uses pulsed air intake to deposit single-atom films on the wafer surface layer by layer.

Specifically, the gas inlet method for the ALD process using two source gases includes the following steps:

Step 1. Pour dilution gas (such as nitrogen) into the process chamber to purge the pipeline and chamber;

Step 2: Inject the mixed gas of the first source gas and the diluent gas into the process chamber;

Step 3. Stop the flow of the first source gas and flow the dilution gas into the process chamber;

Step 4. Inject the mixed gas of the second source gas and the diluent gas into the process chamber;

Step 5: Stop feeding the second source gas and feed the dilution gas into the process chamber.

Repeat steps 2 to 5 above.

During the above steps 2 and 5, it is necessary to use a gas mixing device to fully mix the source gas and diluent gas (or carrier gas used as the source gas) so that the concentration of the mixed gas reaches a very uniform state, and then After rapid dispersion by a gas distribution system (such as a spray device), it is evenly blown to the wafer surface, where a chemical reaction occurs to form a film. Among them, how to mix air quickly and evenly is crucial to shortening the air mixing time and improving performance and productivity.

However, the existing gas mixing device promotes the flow of gas in the horizontal direction by suppressing pressure. This method will not only cause severe flow obstruction, large flow resistance, and low gas mixing efficiency, but also it is difficult to achieve completely uniform gas mixing, and the uniformity effect is poor. It is not suitable for working conditions with relatively high gas mixing requirements.

Contents of the invention

The present invention aims to solve at least one of the technical problems existing in the prior art. It proposes a gas mixing device and semiconductor process equipment, which can not only shorten the gas mixing time and improve the gas mixing efficiency, but also effectively improve the mixing uniformity. Improve product performance.

In order to achieve the purpose of the present invention, a gas mixing device is provided, which is used in semiconductor process equipment and includes a gas mixing component, a first gas inlet pipeline and a second gas inlet pipeline; the gas mixing component is provided with a first gas inlet channel , the second air inlet channel and the annular air mixing channel, where,

The air inlet ends of the first air inlet channel and the second air inlet channel are respectively connected with the air outlet ends of the first air inlet pipeline and the second air inlet pipeline; the first air inlet channel and the third air inlet channel The gas outlet ends of the two air inlet channels are both connected to the annular gas mixing channel; the gas outlet end of the annular gas mixing channel is used to communicate with the process chamber of the semiconductor process equipment;

The air outlet directions of the first air inlet channel and the second air inlet channel are set to enable the air flow from the outlet ends of the first air inlet channel and the second air inlet channel to flow into the annular air mixing channel respectively. When the gases are mixed, they all rotate and flow in the same direction along the circumferential direction of the annular gas mixing channel.

Optionally, the first air inlet channel includes a plurality of first air equalizing holes evenly distributed along the circumferential direction of the annular air mixing channel, and the air outlet end of each first air equalizing hole is in the annular air mixing channel. The connection between the orthographic projection on the radial section and the center of the radial section is the first connection line, and the orthographic projection of the air inlet end of each first air equalizing hole on the radial section is The connection line between the centers of the radial sections is a second connection line, and an included angle is formed between the first connection line and the second connection line.

Optionally, the second air inlet channel includes a plurality of second air equalizing holes evenly distributed along the circumferential direction of the annular air mixing channel, and the air outlet end of each second air equalizing hole is in the annular air mixing channel. The connection between the orthographic projection on the radial section and the center of the radial section is the third connection line, and the orthographic projection of the air inlet end of each second air equalizing hole on the radial section is equal to between the centers of the radial sections The connecting line is a fourth connecting line, and an angle is formed between the third connecting line and the fourth connecting line;

The second air equalizing hole and the first air equalizing hole are staggered from each other in the axial direction of the annular air mixing channel.

Optionally, the first air inlet channel also includes a first annular sub-channel and a first connecting sub-channel, wherein the first annular sub-channel surrounds the outside of the annular air-mixing channel; a plurality of the first annular sub-channels An air equalization hole is located between the first annular sub-channel and the annular air mixing channel, and the air inlet end of each first air equalization hole is connected with the first annular sub-channel, and each first The air outlet end of the air equalizing hole is connected with the annular air mixing channel;

Both ends of the first connecting sub-channel are respectively connected with the first annular sub-channel and the air outlet end of the first air inlet pipe; the outlet direction of the first connecting sub-channel is set to enable the air to flow into the The gas in the first annular sub-channel rotates and flows, and the flow direction of the gas in the first annular sub-channel is the same as the flow direction of the gas in the annular gas mixing channel.

Optionally, the second air inlet channel also includes a second annular sub-channel and a second connecting sub-channel, wherein the second annular sub-channel surrounds the inside of the annular air-mixing channel; a plurality of the first Two air equalization holes are located between the second annular sub-channel and the annular air mixing channel, and the air inlet end of each second air equalization hole is connected with the second annular sub-channel, and each second The air outlet end of the air equalizing hole is connected with the annular air mixing channel;

The second connecting sub-channel and the first connecting sub-channel are staggered from each other in the axial direction of the annular air-mixing channel; both ends of the second connecting sub-channel are respectively connected with the second annular sub-channel and the first connecting sub-channel. The gas outlet end of the second air inlet pipe is connected; the gas outlet direction of the second connecting sub-channel is set to enable the gas flowing into the second annular sub-channel to rotate and flow, and the gas in the second annular sub-channel The flow direction is the same as the flow direction of the gas in the annular gas mixing channel.

Optionally, the orthographic projection of the axis of the first connecting sub-channel on the radial section of the air mixing component coincides with any radial direction on the radial section, or is parallel to each other, or forms an angle. ;

The orthographic projection of the axis of the second connecting sub-channel on the radial cross-section of the air-mixing component is equal to Any radial directions on the radial cross sections coincide with each other, are parallel to each other, or form an included angle.

Optionally, the air mixing device further includes a third air intake pipeline and an on-off valve provided on the third air intake pipeline;

The air mixing component is also provided with a third air inlet channel, and the third air inlet channel is located above the annular air mixing channel; the air inlet end of the third air inlet channel is connected to the third air inlet pipeline. The air outlet end of the third air inlet channel is connected with at least one of the first annular sub-channel and the second annular sub-channel.

Optionally, the third air inlet channel includes a plurality of third air equalizing holes evenly distributed along the circumferential direction of the annular air mixing channel, and the air inlet end of each third air equalizing hole is connected to the third air inlet. The air outlet end of the air pipeline is connected, and the air outlet end of each third air equalization hole is connected with the first annular sub-channel or the second annular sub-channel; or,

The third air inlet channel includes two groups of air holes, and each group of air holes includes a plurality of third uniform air holes evenly distributed along the circumferential direction of the annular air mixing channel, wherein a plurality of air hole groups in one group The air inlet end of the third air equalizing hole is connected to the air outlet end of the third air inlet pipe, and the air outlet end is connected to the first annular sub-channel; a plurality of the third air hole groups in another group The air inlet end of the air equalizing hole is connected to the air outlet end of the third air inlet pipe, and the air outlet end is connected to the second annular sub-channel.

Optionally, the on-off valve includes a valve body and a valve plate, wherein the valve body is connected between the third air intake pipeline and the air mixing component, and a connection is provided in the valve body Channel, the connecting channel is respectively connected with the air outlet end of the third air inlet pipe and the air inlet end of the third air inlet channel;

The valve plate is movably disposed in the connection channel for opening or closing the connection channel, and the valve plate is provided with at least one through hole for allowing gas with a preset flow rate or less to pass through. The through hole.

Optionally, the third air inlet channel also includes a third connection sub-channel, the air inlet end of the third connection sub-channel is connected with the air outlet end of the third air inlet pipeline, the third connection sub-channel The air outlet end is connected with the air inlet ends of the plurality of third air equalizing holes;

A flow guide convex portion is provided on the surface of the air mixing component opposite to the air outlet end of the third air inlet pipe. The surface of the flow guide convex portion opposite to the air outlet end of the third air inlet pipe is round. The arc convex surface is used to divert the gas flowing into the third connecting sub-channel to the air inlet ends of the plurality of third air equalizing holes.

Optionally, a converging channel is provided in the gas mixing component and located below the annular gas mixing channel. The converging channel includes a third annular sub-channel and a vertical sub-channel, wherein the third annular sub-channel The air inlet end of the channel is connected to the air outlet end of the annular air mixing channel, the air outlet end of the third annular sub-channel is connected to the air inlet end of the vertical sub-channel, and the inner circumference of the third annular sub-channel is Both the diameter and the outer circumferential diameter decrease from the annular air-mixing channel to the vertical sub-channel;

The gas outlet end of the vertical sub-channel is used to communicate with a process chamber of the semiconductor process equipment.

As another technical solution, the present invention also provides a semiconductor process equipment, including a process chamber, which is characterized in that it also includes the above-mentioned gas mixing device provided by the present invention for introducing mixed gas into the process chamber.

Optionally, the process chamber includes a cavity, a cover plate and a spray device arranged on the top of the cavity, and the spray device is located below the cover plate; wherein,

The air mixing component is arranged above the cover plate, and a first air inlet corresponding to the air outlet end of the annular air mixing channel is provided in the cover plate, and a guide is provided in the first air inlet. A flow plug, which is provided with a plurality of through holes for converting the flow direction of the mixed gas flowing through it to vertically downward.

Optionally, the plurality of through holes include a plurality of first through holes and a plurality of second through holes, wherein the plurality of first through holes surround the axis of the guide plug at least once ;

Among the plurality of first through holes located in the outermost ring, at least one second through hole is provided in the interval between two adjacent first through holes, and the second through hole is The radial cross-sectional area of the hole is smaller than the radial cross-sectional area of the first through hole.

Optionally, the plurality of through holes include a first through hole with a circular radial cross-sectional shape, and one or more second through holes with an annular radial cross-section; wherein,

The second through holes surround the first through holes, and a plurality of the second through holes are nested in each other; at least one along the first through hole is also provided in each of the second through holes. Two radially extending reinforcing ribs of the second through hole, the reinforcing ribs are respectively connected to the inner peripheral wall and the outer peripheral wall of the second through hole along both radial ends of the second through hole.

Optionally, a tapered channel is provided on the surface of the cover plate opposite to the spray device, the upper end of the tapered channel is connected to the first air inlet, and the lower end of the tapered channel is connected to the first air inlet. The second air inlet on the spray device is connected, and the inner diameter of the tapered channel increases gradually from the first air inlet to the second air inlet.

The invention has the following beneficial effects:

The invention provides an air mixing device that sets the air outlet directions of the first air inlet channel and the second air inlet channel to enable the air flow from the outlet ends of the first air inlet channel and the second air inlet channel to flow into the annular air mixing channel respectively. When the gases are mixed, they all rotate and flow in the same direction (that is, clockwise or counterclockwise) along the circumferential direction of the annular gas mixing channel. This allows various gases to mix while rotating, that is, a swirling flow is formed, thereby increasing the gas flow rate. The smoothness of the flow reduces the flow resistance and increases the flow rate, which in turn can shorten the gas mixing time, improve the gas mixing efficiency, and help increase production capacity; at the same time, various gases can fully carry out component momentum exchange and mass mixing during the rotation process , which can effectively improve mixing uniformity and thereby improve product performance. In addition, the external structure of the air mixing device provided by the present invention only consists of air mixing components, the first air inlet pipe and the second air inlet pipe. The structure is simple and highly integrated, thereby saving space and reducing processing costs.

The semiconductor process equipment provided by the present invention, by using the above gas mixing device provided by the present invention, can not only shorten the gas mixing time, improve the gas mixing efficiency, and help to increase production capacity; it can also effectively improve the mixing uniformity, thereby improving the product quality. performance.

Description of the drawings

Figure 1 is an external structural diagram of an air mixing device provided by a first embodiment of the present invention;

Figure 2 is a cross-sectional view of the air mixing device provided by the first embodiment of the present invention;

Figure 3 is a cross-sectional view along line A-A in Figure 2;

Figure 4 is a cross-sectional view along line B-B in Figure 2;

Figure 5 is a diagram showing three positions of the second connection sub-channel and the second annular sub-channel used in the first embodiment of the present invention;

Figure 6 is a cross-sectional perspective view along line C-C in Figure 2;

Figure 7 is a cross-sectional top view along line C-C in Figure 2;

Figure 8 is a cross-sectional perspective view along line D-D in Figure 2;

Figure 9 is a cross-sectional top view along line D-D in Figure 2;

Figure 10 is a schematic diagram of the gas flow in the gas mixing component used in the first embodiment of the present invention;

Figure 11 is a cross-sectional view of the air mixing device provided by the second embodiment of the present invention;

Figure 12 is an external structural diagram of the air mixing component used in the second embodiment of the present invention;

Figure 13 is a cross-sectional perspective view along line E-E in Figure 11;

Figure 14 is a top view of the third air inlet channel used in the second embodiment of the present invention;

Figure 15 is a structural diagram of the third air inlet passage used in the second embodiment of the present invention;

Figure 16 is another structural diagram of the third air inlet passage used in the second embodiment of the present invention;

Figure 17 is another structural diagram of the third air inlet passage used in the second embodiment of the present invention;

Figure 18 is a cross-sectional view of the on-off valve used in the second embodiment of the present invention;

Figure 19 is a top view of the valve plate used in the second embodiment of the present invention;

Figure 20 is a cross-sectional view of a semiconductor process equipment provided by a third embodiment of the present invention;

Figure 21 is a partial cross-sectional view of the cover plate and sprinkler device used in the third embodiment of the present invention;

Figure 22 is a radial cross-sectional view of the flow guide plug used in the third embodiment of the present invention;

Figure 23 is another radial cross-sectional view of the flow guide plug used in the third embodiment of the present invention.

Detailed ways

In order to enable those skilled in the art to better understand the technical solution of the present invention, the gas mixing device and semiconductor process equipment provided by the present invention will be described in detail below with reference to the accompanying drawings.

First embodiment

The gas mixing device provided by the first embodiment of the present invention is applied to semiconductor process equipment, such as atomic layer deposition (ALD) equipment. The gas mixing device is connected to the process chamber in the semiconductor process equipment, such as with the process chamber provided in the semiconductor process equipment. The spray device on the process chamber is connected for gas mixing, and the mixed gas is transported to the process chamber through the spray device.

Please refer to Figure 1 and Figure 2 together. The air mixing device includes an air mixing component 1, a first air intake pipe 2 and a second air intake pipe 3; The lateral air intake of the air component 1; the air inlet end of the first air inlet pipeline 2 is used to communicate with at least one air source. Taking the ALD equipment as an example, the air inlet end of the first air inlet pipeline 2 is connected to two first air sources. Branch lines (21, 22) are used to communicate with two different air sources respectively through two first branches (21, 22); the air inlet end of the second air intake pipeline 3 is connected to two second branches (31,32), used to communicate with two different gas sources respectively through two second branches (31,32); the above-mentioned multiple gas sources include, for example, a reaction gas source, a carrier gas source, a dilution gas source, etc. one or more of them. During the process, the ventilation of the first air inlet pipe 2 or the second air inlet pipe 3 can be controlled individually, or the ventilation of the first air inlet pipe 2 and the second air inlet pipe 3 can be controlled alternately, or controlled in a pulse manner. The first air intake line 2 and/or the second air intake line 3 are ventilated.

It should be noted that in this embodiment, the extension directions of the first air intake pipe 2 and the second air intake pipe 3 are mutually perpendicular to the axial direction (ie, the vertical direction) of the air mixing component 1 . For example, the extending directions of the first air intake pipe 2 and the second air intake pipe 3 may be parallel to each other. However, the embodiment of the present invention is not limited thereto. In practical applications, the first air intake pipe 2 and the second air intake pipe 3 may be parallel to each other. The extension direction of the air intake pipe 3 can also be at any other angle less than 90° with the axial direction of the air mixing component 1, and the extension direction of the first air intake pipe 2 and the second air intake pipe 3 is consistent with the axial direction of the air mixing component 1. The included angles between the axial directions may be the same or different, and there is no particular limitation on this in the embodiment of the present invention.

As shown in Figure 2, the air mixing component 1 is provided with a first air inlet channel 11 and a second air inlet channel 12. and an annular air mixing channel 15, wherein the air inlet ends of the first air inlet channel 11 and the second air inlet channel 12 are respectively connected with the air outlet ends of the first air inlet pipe 2 and the second air inlet pipe 3; The gas outlet ends of the channel 11 and the second air inlet channel 12 are both connected to the annular gas mixing channel 15; the gas outlet end of the annular gas mixing channel 15 is used to communicate with a process chamber (not shown in the figure) of semiconductor processing equipment. During ventilation, the gas transported by the first air inlet pipe 2 flows into the annular gas mixing channel 15 through the first air inlet channel 11, and then flows into the process chamber through the annular gas mixing channel 15; similarly, through the second air inlet pipe 3. The transported gas flows into the annular gas mixing channel 15 through the second air inlet channel 12, and then flows into the process chamber through the annular gas mixing channel 15.

Moreover, the air outlet directions of the first air inlet channel 11 and the second air inlet channel 12 are set to enable the gas to flow into the annular air mixing channel 15 from the air outlet ends of the first air inlet channel 11 and the second air inlet channel 12 respectively. During mixing, they all rotate and flow in the same direction in the circumferential direction of the annular air mixing channel 15 . The flow direction of the gas in the annular gas mixing channel 15 is the direction of clockwise rotation or counterclockwise rotation around the axis of the annular gas mixing channel 15. When the gases in the gas channel 15 are mixed, they all rotate clockwise around the axis of the annular gas mixing channel 15 , or they all rotate counterclockwise around the axis of the annular gas mixing channel 15 . In this way, various gases flowing into the annular gas mixing channel 15 can be mixed while rotating, that is, a swirling flow can be formed, thereby improving the smoothness of gas flow, reducing flow resistance, increasing flow speed, and thus shortening the gas mixing time and improving gas mixing. efficiency, helping to increase production capacity; at the same time, various gases can fully undergo component momentum exchange and mass mixing during the rotation process, which can effectively improve mixing uniformity and thereby improve product performance.

For the ALD process, it usually uses a variety of different gases with large flow rates (for example, greater than 5000 sccm) and short pulse times (less than or equal to 50 ms). The gas mixing device provided by the embodiment of the present invention makes the inflow annular mixing Various gases in the gas channel 15 are mixed while rotating, which can well meet the process requirements for gas mixing time and gas mixing uniformity under the above-mentioned gas inlet conditions.

In addition, the external structure of the air mixing device provided by the embodiment of the present invention only consists of the air mixing component 1, the first It consists of an air inlet pipe 2 and a second air inlet pipe 3. It has a simple structure and a high degree of integration, thereby saving space and reducing processing costs.

In some optional embodiments, as shown in Figures 6, 7 and 10, the first air inlet channel 11 includes a plurality of first air equalization holes 113 evenly distributed along the circumferential direction of the annular air mixing channel 15, as shown in Figure As shown in 7, the connection between the orthographic projection of the air outlet end B1 of each first air equalizing hole 113 on the radial section of the annular air mixing channel 15 and the center O of the radial section is the first connection line L1. The connection between the orthographic projection of the air inlet end B2 of the first air equalizing hole 113 on the radial section and the center O of the radial section is the second connection line L2, and the first connection line L1 and the second connection line There is an included angle between L2, that is to say, the air outlet end B1 and the air inlet end B2 of each first air equalization hole 113 are not in the same radial direction. For example, the extension direction of each first air equalization hole 113 is in line with the annular air mixing channel 15 are tangent to each other in the circumferential direction of As shown by the arrows in 7, with this arrangement, the air flows from each first air equalization hole 113 into the annular air mixing channel 15 and then rotates in the same direction (clockwise or counterclockwise) to form a swirling flow.

It should be noted that in actual applications, the number, size, angle and size of the air outlet direction deviating from the radial direction, etc. of the first air equalizing holes 113 can be set according to specific needs. This is not particularly limited in the embodiment of the present invention.

Similarly, in some optional embodiments, as shown in FIGS. 8 , 9 and 10 , the second air inlet channel 12 includes a plurality of second air equalization holes 123 evenly distributed along the circumferential direction of the annular air mixing channel 15 , as shown in Figure 9, the connection between the orthographic projection of the air outlet end B3 of each second air equalizing hole 123 on the radial section of the annular air mixing channel 15 and the center O of the radial section is the third connection line. L3, the connection between the orthographic projection of the air inlet end B4 of each second air equalizing hole 123 on the above-mentioned radial section and the center O of the radial section is the fourth connection line L4, and the third connection line L3 and the The four connecting lines L4 form an included angle, that is to say, the air outlet end B3 and the air inlet end B4 of each second air equalizing hole 123 are not in the same radial direction. For example, the extension direction of each second air equalizing hole 123 is in the same direction as the second air equalizing hole 123 Ring sub-channel 122 (described in detail later) are tangent to each other in the circumferential direction of As shown by the arrows in 9, this arrangement can make the air flow from each second air equalization hole 123 into the annular air mixing channel 15 and then rotate in the same direction (clockwise or counterclockwise) to form a swirling flow, and flow from each second air equalization hole 123 to the annular air mixing channel 15. The gas flow direction 123 flowing into the annular gas mixing channel 15 is the same as the gas flow direction flowing into the annular gas mixing channel 15 from each first air equalization hole 113, that is, both are clockwise, or both are counterclockwise. It is easy to understand that since the second air inlet channel 12 is located inside the annular air mixing channel 15, the air outlet direction of each second air equalizing hole 123 is from the center to the edge. Since the first air inlet channel 11 is located inside the annular mixing channel 15, Outside the air channel 15, the air outlet direction of each first air equalizing hole 113 is from the edge to the center.

It should be noted that in practical applications, the number, size, angle and size of the air outlet direction deviating from the radial direction, etc. of the second air equalization holes 123 can be set according to specific needs. This is not particularly limited in the embodiment of the present invention. In addition, the above-mentioned parameters of the second air equalization hole 123 may be the same as or different from the above-mentioned parameters of the first air equalization hole 113 .

In specific implementation, the direction of the first air equalizing hole 113 may be perpendicular to the axial direction of the air mixing component 1, or may have a certain inclination relative to the axial direction of the air mixing component 1, which is not limited here. Similarly, the direction of the second air equalizing hole 123 may be perpendicular to the axial direction of the air mixing component 1, or may have a certain inclination relative to the axial direction of the air mixing component 1, which is not limited here.

In some optional embodiments, the height of the air outlet end of the first air equalization hole 113 (i.e., the connection point between the first air equalization hole 113 and the annular air mixing channel 15) is the same as the height of the air outlet end of the second air equalization hole 123 (i.e., the second air equalization hole 123). The heights of the connection points between the air holes 123 and the annular air-mixing passage 15 are different. For example, taking the direction of the first air equalization hole 113 and the direction of the second air equalization hole 123 both perpendicular to the axial direction of the air mixing component 1, as shown in Figure 10, the height of the first air equalization hole 113 is at the same height as the second air equalization hole. The air holes 123 are located at different heights, that is, the first air equalizing hole 113 and the second air equalizing hole 123 are staggered from each other in the vertical direction. In this way, the two paths of gas flowing out from the first air equalizing hole 113 and the second air equalizing hole 123 can be avoided from being in an annular shape. Directly within 15 meters of the air mixing channel When the first air equalizing hole 113 and the second air equalizing hole 123 meet, the first air equalizing hole 113 and the second air equalizing hole 123 are staggered from each other in the vertical direction, so that one of the first air equalizing hole 113 and the second air equalizing hole 123 can flow into the annular air mixing channel 15 One of the gases first undergoes a period of rotational flow, and then meets another gas flowing into the annular gas mixing channel 15 from the other one of the first equalizing hole 113 and the second equalizing hole 123. This helps to The gases form a stable swirling flow before mixing to avoid direct encounters and turbulence, resulting in uncontrollable mixing effects. In practical applications, the height of the first air equalization hole 113 may be higher than the height of the second air equalization hole 123 , or the height of the first air equalization hole 113 may be lower than the height of the second air equalization hole 123 .

In some optional embodiments, please refer to Figure 2, Figure 3 and Figure 10 together, the first air inlet channel 11 also includes a first annular sub-channel 112 and a first connecting sub-channel 111, wherein the first annular sub-channel 111 The channel 112 surrounds the outside of the annular air mixing channel 15. A plurality of first air equalizing holes 113 are located between the first annular sub-channel 112 and the annular air mixing channel 15, and the air inlet end of each first air equalizing hole 113 is connected to the first The annular sub-channels 112 are connected, and the air outlet end of each first equalizing hole 113 is connected with the annular air-mixing channel 15 . Optionally, the top of the first annular sub-channel 112 is higher than the top of the annular gas-mixing channel 15 , and the bottom end of the first annular sub-channel 112 is lower than the top of the annular gas-mixing channel 15 , so that the first annular sub-channel 112 Partially overlapping with the annular air-mixing channel 15 in the vertical direction, a plurality of first air equalizing holes 113 are connected to the first annular sub-channel 112 and the annular air-mixing channel 15 at their overlapping positions.

Moreover, both ends of the first connecting sub-channel 111 are respectively connected with the first annular sub-channel 112 and the air outlet end of the first air inlet pipe 2 . In some optional embodiments, the air inlet end of the first connecting sub-channel 111 is located on the side of the air mixing component 1, so that lateral air intake can be achieved, and an air inlet structure can be provided for the top side of the air mixing component. Reserved space. Further optionally, the axial directions (ie, vertical directions) of the first connecting sub-channel 111 and the annular air-mixing channel 15 are perpendicular to each other. However, the embodiment of the present invention is not limited to this. In practical applications, the first The angle between the axial direction of the connecting sub-channel 111 and the annular air-mixing channel 15 may also be less than 90°.

The gas delivered by the first air inlet pipe 2 can flow into the first ring via the first connecting sub-channel 111 In the shape sub-channel 112. Moreover, the gas outlet direction of the first connecting sub-channel 111 is set to enable the gas flowing into the first annular sub-channel 112 to rotate and flow, and the flow direction of the gas in the first annular sub-channel 112 is consistent with the flow direction of the gas in the annular gas mixing channel 15 The flow directions are the same, that is, they all rotate clockwise or counterclockwise around the axis of the annular air-mixing channel 15 . In this way, the gas flowing into the first annular sub-channel 112 is also mixed while rotating, forming a swirling flow, and the swirling flow direction in the first annular sub-channel 112 is consistent with the swirling flow direction in the above-mentioned annular gas mixing channel 15, that is, If the swirling direction in the first annular sub-channel 112 is counterclockwise, then the swirling direction in the above-mentioned annular air-mixing channel 15 is also counterclockwise; if the swirling direction in the first annular sub-channel 112 is clockwise, then The swirl direction in the above-mentioned annular air-mixing channel 15 is also clockwise. By making the swirl direction in the first annular sub-channel 112 consistent with the swirl direction in the above-mentioned annular gas mixing channel 15, the gas in the first annular sub-channel 112 can flow into the above-mentioned annular shape through the plurality of first uniform air holes 113. When in the air-mixing channel 15, the flow still rotates along the same swirl direction, thereby avoiding the generation of turbulent flow and damaging the flow smoothness. In addition, by mixing the gas flowing into the first annular sub-channel 112 while rotating, the gas flowing into the annular gas mixing channel 15 can form a swirling flow, thereby further improving the smoothness of the gas flow and the mixing uniformity.

Similarly, please refer to Figures 2, 4 and 10 together. The second air inlet channel 12 also includes a second annular sub-channel 122 and a second connecting sub-channel 121, wherein the second annular sub-channel 122 surrounds the annular mixing Inside the air channel 15; a plurality of second air equalization holes 123 are located between the second annular sub-channel 122 and the annular air mixing channel 15, and the air inlet end of each second air equalization hole 123 is connected with the second annular sub-channel 122, The air outlet end of each second air equalizing hole 123 is connected with the annular air mixing channel 15 . Optionally, the upper end of the second annular sub-channel 122 is higher than the top of the annular gas-mixing channel 15 , and the bottom end of the second annular sub-channel 122 is lower than the top of the annular gas-mixing channel 15 , so that the second annular sub-channel 122 Partially overlapping with the annular air-mixing channel 15 in the vertical direction, a plurality of second air equalization holes 123 are connected to the second annular sub-channel 122 and the annular air-mixing channel 15 at their overlapping positions.

Moreover, the second connecting sub-channel 121 and the first connecting sub-channel 111 are at different heights, that is, at The annular gas mixture channels 15 are axially staggered from each other. For example, as shown in FIG. 10 , the second connecting sub-channel 121 is higher than the first connecting sub-channel 111 , and adaptively, the upper end of the second annular sub-channel 122 is higher than the first connecting sub-channel 111 . The upper end of an annular sub-channel 112, in this way, the first annular sub-channel 112 located in the outer ring can reserve an avoidance space for the second connecting sub-channel 121 above it, so that the two ends of the second connecting sub-channel 121 can respectively It extends to the second annular sub-channel 122 located in the inner ring and the air outlet end of the second air inlet pipe 3, and is connected with both.

In some optional embodiments, the air inlet end of the second connecting sub-channel 121 is located on the side of the air mixing component 1, so that lateral air intake can be achieved, and an air inlet structure can be provided for the top side of the air mixing component. Reserved space. Further optionally, the axial directions of the second connecting sub-channel 121 and the annular mixing channel 15 are perpendicular to each other. However, the embodiment of the present invention is not limited to this. In practical applications, the second connecting sub-channel 121 and the annular mixing channel 15 are axially perpendicular to each other. The included angle between the axial directions of the air channels 15 may also be less than 90°.

The gas delivered by the second air inlet pipe 3 can flow into the second annular sub-channel 122 via the second connecting sub-channel 121 . Moreover, the gas outlet direction of the second connecting sub-channel 121 is set to enable the gas flowing into the second annular sub-channel 122 to rotate and flow, and the flow direction of the gas in the second annular sub-channel 122 is consistent with the flow direction of the gas in the annular gas mixing channel 15 The flow directions are the same, that is, they all rotate clockwise or counterclockwise around the axis of the annular air-mixing channel 15 . In this way, the gas flowing into the second annular sub-channel 122 is also mixed while rotating, forming a swirling flow, and the swirling flow direction in the second annular sub-channel 122 is consistent with the swirling flow direction in the above-mentioned annular gas mixing channel 15, that is, If the swirling direction in the second annular sub-channel 122 is counterclockwise, then the swirling direction in the above-mentioned annular air-mixing channel 15 is also counterclockwise; if the swirling direction in the second annular sub-channel 122 is clockwise, then The swirl direction in the above-mentioned annular air-mixing channel 15 is also clockwise. By making the swirl direction in the second annular sub-channel 122 consistent with the swirl direction in the above-mentioned annular gas mixing channel 15, the gas in the second annular sub-channel 122 can flow into the above-mentioned annular gas through the plurality of second air equalization holes 123. When in the air-mixing channel 15, the flow still rotates along the same swirl direction, thereby avoiding the generation of turbulent flow and damaging the flow smoothness. In addition, by mixing the gas flowing into the second annular sub-channel 122 while rotating, the gas flowing into the annular sub-channel 122 can be mixed while flowing into the annular sub-channel 122 . On the basis that the gas in the shaped gas mixing channel 15 forms a swirling flow, the smoothness of the gas flow and the mixing uniformity are further improved.

In some optional embodiments, as shown in FIG. 5 , taking the second annular sub-channel 122 and the second connecting sub-channel 121 as an example, the axis of the second connecting sub-channel 121 is on the radial cross-section of the gas mixture component 1 The orthographic projection of and any radial direction on the radial section coincide with each other, or are parallel to each other, or form an included angle. For example, Figure (a) in Figure 5 shows that the axis A1 and the radial direction A2 of the second connection sub-channel 121 are parallel to each other; Figure (b) in Figure 5 shows that the axis A1 and the radial direction A2 of the second connection sub-channel 121 are parallel to each other. The radial directions A2 coincide with each other; Figure (c) in Figure 5 shows that the axis A1 of the second connecting sub-channel 121 forms an angle with the radial direction A2. The arrangement of the first annular sub-channel 112 and the first connecting sub-channel 111 is similar to the above-mentioned second annular sub-channel 122 and the second connecting sub-channel 121 , that is, the axis of the first connecting sub-channel 111 is at the center of the air mixing component 1 The orthographic projection on the radial section coincides with any radial direction on the radial section, or is parallel to each other, or forms an included angle.

It should be noted that the first connecting sub-channel 111 and the second connecting sub-channel 121 may be parallel to each other, or may form an included angle in the horizontal plane, and the size of the included angle only needs to ensure that the water flows from the second connecting sub-channel 121 into the second annular sub-channel. The swirling direction of the gas in the channel 122 and the swirling direction of the gas flowing from the first connecting sub-channel 111 into the first annular sub-channel 112 only need to be consistent with the swirling direction in the above-mentioned annular gas mixing channel 15 .

Second embodiment

The air mixing device provided by the second embodiment of the present invention is an improvement based on the above-mentioned first embodiment. Specifically, please refer to Figure 11 and Figure 12 together. Based on the above-mentioned first embodiment, , the air mixing device may also include a third air intake pipe 4 and an on-off valve 5 provided on the third air intake pipe 4 for connecting or disconnecting the third air intake pipe 4. The air inlet end of the third air inlet pipeline 4 can, for example, be connected to a remote plasma source (used to provide cleaning gas carrying plasma free radicals) for performing a plasma cleaning process on the pipeline and process chamber to remove the process. particles produced. However, the embodiment of the present invention is not limited to this. In practical applications, the air inlet end of the third air inlet pipe 4 can also be Connected to at least one of a purge gas source and a source gas source.

As shown in Figure 11, the air mixing component 1 is also provided with a third air inlet channel 17, wherein the third air inlet channel 17 is located above the annular air mixing channel 15; the air inlet end of the third air inlet channel 17 is connected to the above-mentioned third air inlet channel. The air outlet ends of the three air inlet pipes 4 are connected; the air outlet end of the third air inlet channel 17 is connected with at least one of the first annular sub-channel 112 and the second annular sub-channel 122 . The gas delivered by the third air inlet pipe 4 flows into at least one of the first annular sub-channel 112 and the second annular sub-channel 122 via the third inlet channel 17 . By utilizing the third air inlet pipe 4 and the third air inlet channel 17, during the cleaning or purging process, the cleaning gas or purging gas can be introduced from the top of the gas mixing device into the pipelines, channels and chambers, thereby Full cleaning and purging can be carried out from the top of the gas mixing device to prevent residues from appearing in the dead area at the top and improve the cleaning and purging effect.

In some optional embodiments, as shown in FIGS. 13 , 14 and 15 , the third air inlet channel 17 includes a plurality of third air equalization holes 172 evenly distributed along the circumferential direction of the annular air mixing channel 15 . The air inlet end of the third air equalizing hole 172 is connected with the air outlet end of the third air inlet pipe 4 , and the air outlet end of each third air equalizing hole 172 is connected with the first annular sub-channel 112 for connecting the air in the third air inlet pipe 4 The gas is uniformly delivered to the first annular sub-channel 112. However, the embodiment of the present invention is not limited thereto. For example, as shown in FIG. 16 , the air outlet end of each third air equalizing hole 172 can also be connected with the second annular sub-channel 122 for connecting the air in the third air inlet pipe 4 The gas is uniformly transported to the second annular sub-channel 122; or, as shown in Figure 17, the third air inlet channel 18 includes two groups of air holes, each group of air holes includes evenly distributed along the circumferential direction of the annular gas mixing channel 15 A plurality of third air equalizing holes, in which the air inlet end of the plurality of third air equalizing holes 172a in a group of air holes is connected with the air outlet end of the third air inlet pipe 4, and the air outlet end of each third air equalizing hole 172a is connected with the first The annular sub-channel 112 is connected to uniformly transport the gas in the third air inlet pipe 4 to the first annular sub-channel 112; The air outlet end of the air inlet pipe 4 is connected, and the air outlet end of each third air equalization hole 172b is connected with the second annular sub-channel 122 for evenly transporting the gas in the third air inlet pipe 4 to the second annular sub-channel 122 .

In some optional embodiments, as shown in Figures 12, 14 to 18, the third air inlet channel 17 also includes a third connecting sub-channel 171, and the air inlet end of the third connecting sub-channel 171 is connected to the third inlet channel 171. The air outlet end of the air pipeline 4 is connected to each other, and the air outlet end of the third connecting sub-channel 171 is connected to the air inlet ends of the plurality of third air equalizing holes 172 . Optionally, the axis of the third connecting sub-channel 171 and the axial direction of the annular air-mixing channel 15 are parallel to each other. In this way, the air inlet end of the third connecting sub-channel 171 is located on the top surface of the air-mixing component 1, thereby achieving top inlet. gas.

In some optional embodiments, as shown in Figures 18 and 19, the above-mentioned on-off valve includes a valve body 51 and a valve plate 52, wherein the valve body 51 is connected between the above-mentioned third air intake pipeline 4 and the air mixing component 1 between them, and a connecting channel 511 is provided in the valve body 51, which is connected to the air outlet end of the third air inlet pipe 4 and the air inlet end of the third air inlet channel 17 (for example, the third connecting sub-channel 171). connected; the valve plate 52 is movably disposed in the connecting channel 511 for opening or closing the connecting channel 511 to achieve on-off and sealing of the gas path; and the valve plate 52 is provided with at least one through hole 521 for The gas with a flow rate of less than or equal to the preset flow rate is allowed to pass through the through hole 521 . With the help of the through hole 521, even if the valve plate 52 is in a state of disconnecting the channel 511, a small flow of gas can still pass through the through hole 521, thereby suppressing the backflow of downstream gas and the escape of particulate matter back to the upstream pipeline, thereby ensuring Cleanliness of pipelines. When cleaning and purging processes are required, the valve plate 52 can be controlled to open, so that a large flow of cleaning gas or purge gas passes through the connecting channel 511 and enters the third air inlet channel 17 . The number of through holes 521 may be 3 or more, and the plurality of through holes 521 may be evenly distributed or non-uniformly distributed on the valve plate 52; the radial cross-sectional shape of the through holes 521 is, for example, circular, rectangular, square or Oval shape, etc. In practical applications, the ventilation volume can be adjusted by setting the number of through holes 521 and the ventilation cross-sectional area.

In some other optional embodiments, a butterfly valve can be used instead of the above-mentioned on-off valve, and switching between a small flow normal state and a large flow ventilation state can be achieved by adjusting the valve core opening of the butterfly valve.

In some optional embodiments, as shown in Figure 12 and Figure 18, the air mixing component 1 and the third A flow guide convex portion 19 is provided on the surface opposite the air outlet end of the air intake pipe 4. The surface of the flow guide convex portion 19 opposite to the air outlet end of the third air intake pipe 4 is an arc convex surface 191 for diverting the inflow into the third air inlet pipe 4. The gas in the connecting sub-channel 171 is diverted to the air inlet ends of the plurality of third air equalizing holes 172 . With the help of the flow guide convex portion 19, it can not only guide the flow, but also reduce the flow dead zone, thereby avoiding gas residue.

In some optional embodiments, as shown in FIG. 11 , a converging channel 16 is provided in the air mixing component 1 and located below the annular air mixing channel 15 . The converging channel 16 includes a third annular sub-channel 161 and a vertical Sub-channel 162, wherein the air inlet end of the third annular sub-channel 161 is connected with the air outlet end of the annular air mixing channel 15, the air outlet end of the third annular sub-channel 161 is connected with the air inlet end of the vertical sub-channel 162, and the third The inner diameter and the outer diameter of the annular sub-channel 161 both decrease from the annular air-mixing channel 15 to the vertical sub-channel 162; the diameter of the vertical sub-channel 162 is equal to the minimum value of the outer circumferential diameter of the third annular sub-channel 161; the annular air-mixing The outer circumferential diameter of the channel 15 is equal to the maximum value of the outer circumferential diameter of the third annular sub-channel 161; the outlet end of the vertical sub-channel 162 is used to communicate with the process chamber of the semiconductor process equipment. The fully mixed gas in the annular gas mixing channel 15 will be gathered together under the action of the third annular sub-channel 161, and flow downward in the vertical direction under the guidance of the vertical sub-channel 162.

To sum up, the air mixing device provided by the above embodiments of the present invention sets the air outlet directions of the first air inlet channel and the second air inlet channel to enable the air to flow from the first air inlet channel and the second air inlet channel respectively. When the gases flowing into the annular gas mixing channel from the outlet end of the channel are mixed, they all rotate and flow in the same direction (that is, clockwise or counterclockwise) along the circumferential direction of the annular gas mixing channel, so that various gases can be mixed while rotating. That is to say, a swirling flow is formed, which can improve the smoothness of gas flow, reduce flow resistance, increase flow rate, thereby shortening the gas mixing time, improving gas mixing efficiency, and helping to increase production capacity; at the same time, various gases can be processed during the rotation process Sufficient component momentum exchange and mass mixing can effectively improve mixing uniformity and thereby improve product performance. In addition, the external structure of the air mixing device provided by the present invention only consists of air mixing components, the first air inlet pipe and the second air inlet pipe. The structure is simple and highly integrated, thereby saving space and reducing processing costs.

Third embodiment

As another technical solution, please refer to Figure 20. A third embodiment of the present invention also provides a semiconductor process equipment, including a process chamber 6, and a gas mixing device provided by the above embodiments of the present invention. The gas mixing device is used for The mixed gas is introduced into the process chamber 6 . The process chamber 6 is also provided with a base 64 for carrying the wafer, and a heating device may be provided in the base 64 for heating the wafer. In addition, an exhaust pipeline 65 is provided at the bottom of the process chamber 6 for exhausting gas in the process chamber 6 .

In some optional embodiments, as shown in FIGS. 20 and 21 , the process chamber 6 includes a cavity 61 and a cover 62 and a spray device 63 disposed on the top of the cavity 61 . The spray device 63 is located at Below the cover plate 62; wherein, the air mixing component 1 is provided on the cover plate 62, and a first air inlet 621 corresponding to the air outlet end of the vertical sub-channel 162 is provided in the cover plate 62. The first air inlet 621 is close to the nozzle. One end of the shower device 63 is provided with an arc-shaped fillet for improving the smoothness of the air flow. In practical applications, the converging channel 16 can also be omitted. In this case, the air outlet end of the annular air mixing channel 15 is connected to the first air inlet 621 .

Moreover, as shown in FIGS. 21 and 22 , a flow guide plug 7 is provided in the first air inlet 621 , and a plurality of through holes 71 are provided in the flow guide plug 7 for diverting the flow of the mixed gas flowing therethrough. The direction changes to vertical downward. The flow guide plug 7 can deflect and guide the downward flowing gas (that is, after the gas in the swirling state hits the hole wall of the flow guide plug 7, the radial component of its flow velocity is almost 0), so that Converting the gas from a swirling flow state to a vertical downward flow state is beneficial to the spray device 63 to divert the gas, thereby ensuring that the gas entering the process chamber no longer rotates and ensuring the controllability of the film forming process.

In some optional embodiments, as shown in Figure 22, the plurality of through holes 71 include a plurality of first through holes 71a and a plurality of second through holes 71b, wherein the radial direction of the first through holes 71a The cross-sectional shape is hexagonal, and the plurality of first through holes 71a are arranged in a honeycomb shape; among the plurality of first through holes 71a located in the outermost circle, there are two adjacent first through holes 71a. There is at least one interval between There is a second through hole 71b, and the radial cross-sectional area of the second through hole 71b is smaller than the radial cross-sectional area of the first through hole 71a. Specifically, as shown in FIG. 22, there are six first through holes 71a surrounding one first through hole 71a, and two adjacent first through holes 71a among the six first through holes 71a are adjacent to each other. A second through hole 71b is provided between the through holes 71a. With this arrangement, the ratio of the wall surface (ie, non-through-hole area) area of the flow guide plug 7 to the entire radial cross-sectional area of the flow guide plug 7 can be reduced as much as possible, thereby minimizing the flow resistance and ensuring The smoothness of gas flow. In practical applications, the first through hole 71a can also circle around the axis of the guide plug 7 multiple times, and the radial cross-sectional shape of the first through hole 71a can also be in any other shape, such as circle, square, triangle, Rhombus or trapezoid etc. The radial cross-sectional shape of the second through hole 71b can also be any shape, such as a circle, a square, a triangle, a hexagon, a rhombus, a trapezoid, etc.

In other optional embodiments, as shown in Figure 23, the plurality of through holes 71 include a first through hole 71a with a circular radial cross-section, and one or more circular radial cross-sections. An annular second through hole 71b; wherein, the second through hole 71b surrounds the first through hole 71a, and a plurality of second through holes 71b are nested in each other; in each second through hole 71b, there is also a There is at least one reinforcing rib 72 extending along the radial direction of the second through hole 71b for improving wall strength. For example, there are a plurality of reinforcing ribs 72 , and they are evenly distributed along the circumferential direction of the second through hole 71 b. Specifically, as shown in Figure 23, there are two second through holes 71b, and both of them surround the first through hole 71a, and one of the second through holes 71b surrounds the other second through hole 71b. , there are 4 reinforcing ribs 72 evenly distributed in the second through hole 71b located in the inner ring; 8 reinforcing ribs 72 evenly distributed in the second through hole 71b located in the outer ring, and the 8 reinforcing ribs 72 located in the outer ring are the same as those located in the outer ring. The four reinforcing ribs 72 of the inner ring are staggered from each other in the circumferential direction of the second through hole 71b to evenly increase the wall strength. Optionally, the number of second through holes 71b is 2 to 4.

It should be noted that in actual applications, the multiple through holes 71 are not limited to the above two layout methods. In actual applications, any other layout method can also be used, as long as the wall surface (ie, the non-through hole area) is ensured. ), try to reduce the area of the wall relative to the diversion The proportion of the entire radial cross-sectional area of the plug 7 can be reduced to the greatest extent and the flow resistance can be ensured to ensure the smoothness of the gas flow. Optionally, the thickness of a single hole wall is greater than or equal to 0.5mm and less than or equal to 2mm.

In some optional embodiments, as shown in Figure 21, a tapered channel 622 is provided on the surface of the cover 62 opposite to the spray device 63, and the upper end of the tapered channel 622 is connected to the first air inlet 621. , the lower end of the tapered channel 622 is connected with the second air inlet 631 on the spray device 63 , and the inner diameter of the tapered channel 622 increases gradually from the second air inlet 631 to the second air inlet 631 . In this way, the side walls of the tapered channel 622 can form a space similar to an inverted "funnel" shape, which can compress the gas flowing out from the second air inlet 631 and cause it to diffuse toward the edge more quickly, thereby increasing the gas diffusion speed, thus The uniformity of gas distribution by the spray device 63 can be improved; at the same time, the overall volume of the chamber can also be reduced, which is beneficial to saving cleaning or purging time and improving process efficiency.

The semiconductor process equipment provided by the embodiments of the present invention, by using the above gas mixing device provided by the above embodiments of the present invention, can not only shorten the gas mixing time, improve the gas mixing efficiency, and help to increase production capacity; but also can effectively improve the mixing uniformity, thereby improving product performance. Taking the ALD process using the semiconductor process equipment shown in Figure 20 as an example, it was found through experiments that the source gas mass distribution uniformity on the wafer surface is less than 2%, and the film thickness uniformity is less than 1%, which effectively improves the process uniformity.

It can be understood that the above embodiments are only exemplary embodiments adopted to illustrate the principles of the present invention, but the present invention is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also regarded as the protection scope of the present invention.

Claims (16)

1. A gas mixing device used in semiconductor process equipment, characterized in that it includes a gas mixing component, a first gas inlet pipeline and a second gas inlet pipeline; the gas mixing component is provided with a first gas inlet channel, a second gas inlet channel air channel and annular air mixing channel, where,

   The air inlet ends of the first air inlet channel and the second air inlet channel are respectively connected with the air outlet ends of the first air inlet pipeline and the second air inlet pipeline; the first air inlet channel and the third air inlet channel The gas outlet ends of the two air inlet channels are both connected to the annular gas mixing channel; the gas outlet end of the annular gas mixing channel is used to communicate with the process chamber of the semiconductor process equipment;

   The air outlet directions of the first air inlet channel and the second air inlet channel are set to enable the air flow from the outlet ends of the first air inlet channel and the second air inlet channel to flow into the annular air mixing channel respectively. When the gases are mixed, they all rotate and flow in the same direction along the circumferential direction of the annular gas mixing channel.
2. The air mixing device according to claim 1, wherein the first air inlet channel includes a plurality of first air equalizing holes evenly distributed along the circumferential direction of the annular air mixing channel, and each of the first air equalizing holes The connection between the orthographic projection of the air outlet end of the air hole on the radial section of the annular air mixing channel and the center of the radial section is the first connection line, and the air inlet end of each first air equalization hole The connection line between the orthographic projection on the radial section and the center of the radial section is a second connection line, and an included angle is formed between the first connection line and the second connection line.
3. The air mixing device according to claim 2, wherein the second air inlet channel includes a plurality of second air equalizing holes evenly distributed along the circumferential direction of the annular air mixing channel, and each of the second air equalizing holes The connection between the orthographic projection of the outlet end of the air hole on the radial section of the annular air mixing channel and the center of the radial section is the third connection line, and the air inlet end of each second air equalization hole The connection line between the orthographic projection on the radial section and the center of the radial section is a fourth connection line, and an angle is formed between the third connection line and the fourth connection line;

   The second air equalizing hole and the first air equalizing hole are staggered from each other in the axial direction of the annular air mixing channel.
4. The air mixing device according to claim 3, wherein the first air inlet channel further includes a first annular sub-channel and a first connecting sub-channel, wherein the first annular sub-channel surrounds the annular Outside the air mixing channel; a plurality of first air equalizing holes are located between the first annular sub-channel and the annular air mixing channel, and the air inlet end of each first air equalizing hole is connected to the first The annular sub-channels are connected, and the air outlet end of each first air equalizing hole is connected with the annular air mixing channel;

   Both ends of the first connecting sub-channel are respectively connected with the first annular sub-channel and the air outlet end of the first air inlet pipe; the outlet direction of the first connecting sub-channel is set to enable the air to flow into the The gas in the first annular sub-channel rotates and flows, and the flow direction of the gas in the first annular sub-channel is the same as the flow direction of the gas in the annular gas mixing channel.
5. The air mixing device according to claim 4, wherein the second air inlet channel further includes a second annular sub-channel and a second connecting sub-channel, wherein the second annular sub-channel surrounds the annular Inside the air mixing channel; a plurality of second air equalizing holes are located between the second annular sub-channel and the annular air mixing channel, and the air inlet end of each second air equalizing hole is connected to the second air mixing hole. The annular sub-channels are connected, and the air outlet end of each second air equalizing hole is connected with the annular air mixing channel;

   The second connecting sub-channel and the first connecting sub-channel are staggered from each other in the axial direction of the annular air-mixing channel; both ends of the second connecting sub-channel are respectively connected with the second annular sub-channel and the first connecting sub-channel. The gas outlet end of the second air inlet pipe is connected; the gas outlet direction of the second connecting sub-channel is set to enable the gas flowing into the second annular sub-channel to rotate and flow, and the gas in the second annular sub-channel The flow direction is the same as the flow direction of the gas in the annular gas mixing channel.
6. The air mixing device according to claim 5, characterized in that, the orthographic projection of the axis of the first connecting sub-channel on the radial section of the air mixing component is consistent with any radial direction on the radial section. Overlapping each other, or parallel to each other, or at an angle;

   The orthographic projection of the axis of the second connecting sub-channel on the radial section of the air-mixing component coincides with any radial direction on the radial section, or is parallel to each other, or forms an included angle.
7. The air mixing device according to claim 5, characterized in that the air mixing device further includes a third air inlet pipeline and an on-off valve provided on the third air inlet pipeline;

   The air mixing component is also provided with a third air inlet channel, and the third air inlet channel is located above the annular air mixing channel; the air inlet end of the third air inlet channel is connected to the third air inlet pipeline. The air outlet end of the third air inlet channel is connected with at least one of the first annular sub-channel and the second annular sub-channel.
8. The air mixing device according to claim 7, wherein the third air inlet channel includes a plurality of third air equalizing holes evenly distributed along the circumferential direction of the annular air mixing channel, and each of the third air equalizing holes The air inlet end of the air hole is connected to the air outlet end of the third air inlet pipe, and the air outlet end of each third air equalization hole is connected to the first annular sub-channel or the second annular sub-channel; or,

   The third air inlet channel includes two groups of air holes, and each group of air holes includes a plurality of third uniform air holes evenly distributed along the circumferential direction of the annular air mixing channel, wherein a plurality of air hole groups in one group The air inlet end of the third air equalizing hole is connected to the air outlet end of the third air inlet pipe, and the air outlet end is connected to the first annular sub-channel; a plurality of the third air hole groups in another group The air inlet end of the air equalizing hole is connected to the air outlet end of the third air inlet pipe, and the air outlet end is connected to the second annular sub-channel.
9. The air mixing device according to claim 8, wherein the on-off valve includes a valve body and a valve plate, wherein the valve body is connected between the third air intake pipeline and the air mixing component. , and a connecting channel is provided in the valve body, and the connecting channel is respectively connected with the air outlet end of the third air inlet pipe and the air inlet end of the third air inlet channel;

   The valve plate is movably disposed in the connection channel for opening or closing the connection channel, and the valve plate is provided with at least one through hole for allowing gas with a preset flow rate or less to pass through. The through hole.
10. The air mixing device according to claim 8, characterized in that the third air inlet channel further includes a third connecting sub-channel, the air inlet end of the third connecting sub-channel and the third air inlet pipe. The air outlet end is connected, and the air outlet end of the third connecting sub-channel is connected with the air inlet ends of the plurality of third air equalizing holes;

    A flow guide convex portion is provided on the surface of the air mixing component opposite to the air outlet end of the third air inlet pipe, and the surface of the flow guide convex portion opposite to the air outlet end of the third air inlet pipe is round. The arc convex surface is used to divert the gas flowing into the third connecting sub-channel to the air inlet ends of the plurality of third air equalizing holes.
11. The air mixing device according to claim 1, characterized in that, in the air mixing component, a converging channel is provided below the annular air mixing channel, and the converging channel includes a third annular sub-channel and a vertical sub-channel, wherein the air inlet end of the third annular sub-channel is connected to the air outlet end of the annular air mixing channel, and the air outlet end of the third annular sub-channel is connected to the air inlet end of the vertical sub-channel, And the inner circumferential diameter and the outer circumferential diameter of the third annular sub-channel both decrease from the annular air-mixing channel to the vertical sub-channel;

    The gas outlet end of the vertical sub-channel is used to communicate with the process chamber of the semiconductor process equipment.
12. A semiconductor process equipment, including a process chamber, characterized in that it also includes a gas mixing device according to any one of claims 1-11, used to pass mixed gas into the process chamber.
13. The semiconductor process equipment according to claim 12, characterized in that the process chamber includes a cavity, a cover plate and a spray device arranged on the top of the cavity, the spray device is located below the cover plate ;in,

    The air mixing component is arranged above the cover plate, and a first air inlet corresponding to the air outlet end of the annular air mixing channel is provided in the cover plate, and a guide is provided in the first air inlet. A flow plug, which is provided with a plurality of through holes for converting the flow direction of the mixed gas flowing through it. is vertically downward.
14. The semiconductor process equipment according to claim 13, wherein the plurality of through holes include a plurality of first through holes and a plurality of second through holes, wherein the plurality of first through holes surround The axis of the guide plug surrounds at least one circle;

    Among the plurality of first through holes located in the outermost ring, at least one second through hole is provided in the interval between two adjacent first through holes, and the second through hole is The radial cross-sectional area of the hole is smaller than the radial cross-sectional area of the first through hole.
15. The semiconductor process equipment according to claim 13, characterized in that the plurality of through holes include a first through hole with a circular radial cross-sectional shape, and one or more circular through-holes with a radial cross-sectional shape. shaped second through hole; where,

    The second through holes surround the first through holes, and a plurality of the second through holes are nested in each other; at least one along the first through hole is also provided in each of the second through holes. Two radially extending reinforcing ribs of the second through hole, the reinforcing ribs are respectively connected to the inner peripheral wall and the outer peripheral wall of the second through hole along both radial ends of the second through hole.
16. The semiconductor process equipment according to claim 13, characterized in that a tapered channel is provided on the surface of the cover plate opposite to the spray device, and the upper end of the tapered channel is in contact with the first air inlet. The lower end of the tapered channel is connected with the second air inlet on the spray device, and the inner diameter of the tapered channel increases gradually from the first air inlet to the second air inlet.