CN112359344B

CN112359344B - Semiconductor process equipment and air inlet mechanism thereof

Info

Publication number: CN112359344B
Application number: CN202011060316.1A
Authority: CN
Inventors: 兰玥
Original assignee: Beijing Naura Microelectronics Equipment Co Ltd
Current assignee: Beijing Naura Microelectronics Equipment Co Ltd
Priority date: 2020-09-30
Filing date: 2020-09-30
Publication date: 2022-09-16
Anticipated expiration: 2040-09-30
Also published as: CN112359344A

Abstract

The embodiment of the application provides semiconductor process equipment and a gas inlet mechanism thereof. The gas inlet mechanism is arranged on a process chamber of semiconductor process equipment, is used for introducing gas into the process chamber and comprises: comprises an air inlet cylinder assembly; a gas passage is formed in the gas inlet cylinder assembly, and a gas inlet and a gas outlet are respectively arranged at two ends of the gas inlet cylinder assembly; the inner diameter of the gas passage is reduced along the direction from the gas inlet to the gas outlet; the gas inlet is connected with a gas supply source of the semiconductor processing equipment, and the gas outlet is connected with the top of the process chamber; the inner wall of the gas inlet cylinder assembly is also provided with a spiral line group, and the spiral line group is used for generating vortex of gas flowing through the gas passage so that the gas entering the process chamber is in a vortex state. The embodiment of the application realizes that the saturated adsorption time of gas and the purging time of the process chamber are greatly shortened, so that the productivity of semiconductor process equipment is greatly improved, and the application cost of the equipment can be effectively reduced.

Description

Semiconductor process equipment and air inlet mechanism thereof

Technical Field

The application relates to the technical field of semiconductor processing, in particular to semiconductor process equipment and an air inlet mechanism thereof.

Background

At present, with the rapid iterative update of the integrated circuit technology, electronic components are continuously promoted to develop towards the direction of miniaturization, integration and high efficiency, and the line width of the integrated circuit is continuously reduced. When the line width of integrated circuits is scaled below 14nm (nanometers), conventional thin film deposition techniques, for example: it is becoming increasingly difficult to fill small-sized, high-aspect-ratio deep holes/trenches using Physical Vapor Deposition (PVD), Chemical Vapor Deposition (CVD), etc. Therefore, Atomic Layer Deposition (ALD) is widely used in the current advanced technology production line, including but not limited to the deposition of metal and non-metal materials.

The ALD technology is a thin film deposition technology which adsorbs a monoatomic layer on a substrate layer by layer, and has the biggest characteristic of self-limitation, so that the thin film prepared by the ALD technology has various advantages of highly controllable thickness, excellent uniformity, high step coverage rate and the like. A technique for forming a deposited thin film by alternately passing two vapor phase precursors into a process chamber and chemically reacting, which can deposit the material layer by layer as a monatomic film on the substrate surface. An inert gas is required to purge the process chamber between the two precursor pulses to remove excess precursor that is not adsorbed on the substrate surface to ensure that the chemical reaction only occurs at the substrate surface.

In the growth process of the ALD process, different precursors alternately enter a process chamber to execute the process, and a gas pipeline and the process chamber are purged through inert gas between two precursor pulses, wherein the process is mainly realized by opening and closing a pulse valve in a gas transmission system in the prior art. The ideal ALD process growth is that two precursors react with the surface of the substrate alternately, so that the two precursors are prevented from generating CVD reaction and depositing on the surface of the substrate. Therefore, after the first precursor is introduced to the surface of the substrate and reacts, the residue of the first precursor remaining in the process chamber and the gas pipeline must be removed before the second precursor enters the process chamber. These residues readily react with each other to form compounds, which can contaminate the substrate surface with contaminant particles. ALD processes are limited by their growth principles, which have a lower growth rate compared to CVD and PVD processes, thus resulting in a correspondingly lower throughput of atomic layer deposition equipment.

Disclosure of Invention

The application provides semiconductor process equipment and an air inlet mechanism thereof aiming at the defects of the prior art, and aims to solve the technical problem that the productivity of atomic layer deposition equipment is low in the prior art.

In a first aspect, embodiments of the present application provide a gas inlet mechanism disposed on a process chamber of semiconductor processing equipment for introducing a gas into the process chamber, comprising: comprises an air inlet cylinder assembly; a gas passage is formed in the gas inlet cylinder assembly, and a gas inlet and a gas outlet are respectively arranged at two ends of the gas inlet cylinder assembly; the inner diameter of the gas passage becomes smaller along the direction from the gas inlet to the gas outlet; the gas inlet is connected with a gas supply source of the semiconductor processing equipment, and the gas outlet is connected with the top of the process chamber; the inner wall of the gas inlet barrel assembly is also provided with a spiral line group, and the spiral line group is used for enabling the gas flowing through the gas passage to generate vortex so that the gas entering the process chamber is in a vortex state.

In an embodiment of the present application, the gas inlet mechanism further comprises a mounting sleeve and a gas inlet assembly connected to each other, wherein the mounting sleeve is connected to the gas inlet, the gas inlet assembly is connected to a gas supply source of the semiconductor processing equipment, and the gas inlet assembly is used for introducing gas into the gas inlet cylinder assembly through the mounting sleeve.

In an embodiment of the present application, the air intake assembly includes a main pipeline and at least two air intake branches communicated with the main pipeline, and the main pipeline is disposed at a middle position of the top surface of the mounting sleeve; at least two air inlet branch circuits are arranged between the air supply source and the main pipeline and used for leading gas into the main pipeline.

In an embodiment of the present application, the air inlet cylinder assembly includes at least one tapered cylinder, the air passage is formed in at least one tapered cylinder, a preset included angle is formed between any one of straight lines from the air inlet to the air outlet and an axis on an inner wall of the tapered cylinder, and a value of the preset included angle is smaller than 45 degrees.

In an embodiment of the present application, the air inlet cylinder assembly includes a plurality of conical cylinders, two ends of each conical cylinder are respectively a sub air inlet and a sub air outlet, and the conical cylinders are connected end to end, and the inner diameters of any two adjacent sub air outlets and sub air inlets of the conical cylinders are the same.

In an embodiment of the present application, the inner diameter of the gas passage changes linearly, nonlinearly, or indirectly.

In an embodiment of the present application, the air inlet cylinder assembly further includes a connecting pipe for connecting any two adjacent conical cylinders.

In an embodiment of the present application, the spiral line set includes a plurality of spiral lines, each of the plurality of spiral lines extends from the air inlet to the air outlet, and the plurality of spiral lines are uniformly distributed on the inner wall of the air inlet cylinder assembly.

In an embodiment of the present application, the plurality of spiral lines are female lines concavely disposed on an inner wall of the air intake barrel assembly and/or male lines convexly disposed on the inner wall of the air intake barrel assembly.

In a second aspect, embodiments of the present application provide semiconductor processing equipment comprising a gas supply source, a process chamber, and the gas inlet mechanism of the first aspect, wherein the gas inlet is connected to the gas supply source of the semiconductor processing equipment and the gas outlet is connected to the top of the process chamber.

The technical scheme provided by the embodiment of the application has the following beneficial technical effects:

according to the gas inlet cylinder assembly, the inner diameter of the gas passage is changed, the spiral line group is arranged on the inner wall of the gas inlet cylinder assembly, so that the flowing speed of gas can be greatly improved, and the gas in the gas passage and the process chamber can generate vortex. The gas inlet mechanism improves the gas flowing speed and enables the gas to generate vortex, so that the flowing path length and the turbulence degree of the gas in the process chamber are greatly increased, the diffusion and mixing effects of the gas in the process chamber are enhanced, the saturated adsorption time of the gas and the purging time of the process chamber are greatly shortened, the capacity of semiconductor process equipment is greatly improved, and the application cost of the equipment can be effectively reduced.

Additional aspects and advantages of the present application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the present application.

Drawings

The foregoing and/or additional aspects and advantages of the present application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:

FIG. 1 is a schematic view of a gas inlet mechanism and a process chamber according to an embodiment of the present disclosure;

FIG. 2 is a schematic cross-sectional view of an air intake mechanism provided in an embodiment of the present application;

FIG. 3 is a schematic cross-sectional view of another intake mechanism provided in an embodiment of the present application;

FIG. 4 is a schematic perspective view of a cone-shaped cylinder and a spiral line set according to an embodiment of the present disclosure;

FIG. 5 is a schematic view of the A-A section of the tapered cartridge shown in FIG. 4 in cooperation with a spiral set of wires;

fig. 6 is a schematic view illustrating a gas flowing state on a wafer surface according to an embodiment of the present disclosure.

Detailed Description

Reference will now be made in detail to the present application, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar parts or parts having the same or similar functions throughout. In addition, if a detailed description of the known art is not necessary for illustrating the features of the present application, it is omitted. The embodiments described below with reference to the accompanying drawings are exemplary only for explaining the present application and are not construed as limiting the present application.

It will be understood by those within the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

The following describes the technical solutions of the present application and how to solve the above technical problems with specific embodiments.

The embodiment of the present application provides a gas inlet mechanism 100, disposed on a process chamber 200 of a semiconductor processing apparatus, for introducing gas into the process chamber 200, wherein a schematic structural diagram of the gas inlet mechanism 100 is shown in fig. 1, and includes: an air inlet cylinder assembly 1; wherein, a gas passage 11 is formed in the gas inlet cylinder assembly 1, and the two ends of the gas inlet cylinder assembly 1 are respectively provided with a gas inlet 12 and a gas outlet 13; the inner diameter of the gas passage 11 becomes smaller in the direction from the gas inlet 12 to the gas outlet 13; the gas inlet 12 is connected to a gas supply source (not shown) of the semiconductor processing equipment, and the gas outlet 13 is connected to the top of the process chamber 200 to guide gas into the process chamber 200. The inner wall of the gas inlet cylinder assembly 1 is further provided with a spiral set 14, and the spiral set 14 is used for generating vortex for the gas flowing through the gas passage 11 so as to enable the gas entering the process chamber 200 to be in a vortex state.

As shown in fig. 1, the semiconductor processing apparatus is specifically an apparatus for performing an atomic layer deposition process, or the semiconductor processing apparatus may also be an apparatus for performing an integrated process, and the embodiments of the present application are not limited thereto. The gas inlet barrel assembly 1 is disposed on a process chamber 200 of a semiconductor processing apparatus, and is used for introducing gases into the process chamber 200, and the gases may specifically include a reaction gas (such as a precursor in an ALD reaction) and a purge gas. Specifically, the gas inlet cylinder assembly 1 may be disposed at a middle position of the upper lid 201 of the process chamber 200, the gas inlet 12 of the gas inlet cylinder assembly 1 may be connected to a gas supply source of semiconductor process equipment, and the gas outlet 13 of the gas inlet cylinder assembly 1 may be connected to the process chamber 200, so that the gas passage 11 communicates with the process chamber 200. The gas inlet barrel assembly 1 is internally provided with a gas passage 11, the inner diameter of the gas passage 11 is reduced along the direction from the gas inlet 12 to the gas outlet 13, namely, the inner diameter of the gas passage 11 is reduced along the gas flow direction, and the flow speed of the gas can be greatly improved by adopting the design of the gas passage 11. The inner wall of the gas inlet cylinder assembly 1 is provided with the spiral set 14, and the gas enters the gas passage 11 and then generates vortex under the action of the spiral set 14, so that the gas entering the process chamber 200 generates vortex, and the flow path length and the turbulence degree of the gas in the process chamber 200 are increased. In practical applications, for example, when the semiconductor processing equipment is used for performing an atomic layer deposition process, due to the design of the gas passage 11, the saturated adsorption efficiency of the reaction gas and the efficiency of purging the process chamber 200 by the purge gas can be greatly improved, so that the productivity of the semiconductor processing equipment can be greatly improved, and the application cost of the equipment can be effectively reduced.

In the present embodiment, the specific shape of the intake mechanism 100 is not limited, and the gas passage 11 is formed inside the intake mechanism, and the inner diameter of the gas passage 11 is reduced in the gas flow direction. Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust the settings according to actual situations.

In one embodiment of the present application, as shown in fig. 1 and 2, the gas inlet mechanism 100 further includes a mounting sleeve 2 and a gas inlet assembly 3 connected to each other, wherein the mounting sleeve 2 is connected to the gas inlet 12, the gas inlet assembly 3 is connected to a gas supply source of the semiconductor processing equipment, and the gas inlet assembly 3 is used for introducing gas into the gas passage 11 of the gas inlet cylinder assembly 1 through the mounting sleeve 2.

As shown in fig. 1 and 2, the mounting sleeve 2 is made of a metal material. The mounting sleeve 2 includes an open end and a closed end, and the open end of the mounting sleeve 2 is hermetically connected to the air inlet 12 of the air inlet barrel assembly 1, for example, by using a connection manner such as a screw connection or a snap connection. The air inlet assembly 3 is arranged at the closed end of the mounting sleeve 2, and the air inlet assembly 3 is connected with an air supply source for introducing air into the air inlet cylinder assembly 1 through the mounting sleeve 2. By adopting the design, the structure of the embodiment of the application is simple, so that the disassembly, assembly and maintenance efficiency is greatly improved. It should be noted that the embodiment of the present application is not limited to the specific implementation of the mounting sleeve 2 and the connection manner with the air intake barrel assembly 1, for example, the mounting sleeve 2 may be made of a non-metal material. In addition, the embodiment of the present application does not necessarily include the mounting sleeve 2, and for example, the intake assembly 3 can be directly connected to the intake port 12 of the intake barrel assembly 1. Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust the settings according to actual situations.

In an embodiment of the present application, as shown in fig. 1 and fig. 2, the air inlet assembly 3 includes a main pipe 31 and at least two air inlet branches 32 communicated with the main pipe 31, wherein the main pipe 31 is disposed at a middle position of the top surface of the mounting sleeve 2; at least two gas inlet branches 32 are provided between the gas supply source and the main pipe 31 for introducing gas into the main pipe 31.

As shown in fig. 1 and 2, both the main pipe 31 and the intake branch 32 may be made of a metal material and have a tubular structure. The bottom end of the main pipeline 31 is connected to the middle position of the top surface of the mounting sleeve 2, for example, the connection mode between the bottom end and the top surface of the mounting sleeve may specifically be a screwing mode or a welding mode, but the embodiment of the present application is not limited thereto. The two air inlet branches 32 are both disposed at the top end of the main pipe 31, for example, the two air inlet branches 32 are connected to the main pipe 31 through a three-way joint, but the embodiment of the present invention is not limited thereto. In practical application, both the two gas inlet branches 32 are connected to a gas supply source, and one of the gas inlet branches 32 may be used to introduce a first reaction gas and a first purge gas for performing an atomic layer deposition process into the gas inlet cylinder assembly 1; and the other gas inlet branch 32 is used for introducing a second reaction gas and a second purge gas for performing the atomic layer deposition process into the gas inlet cylinder assembly 1. However, the embodiment of the present application is not limited to this, and for example, the gas introduced into the two gas inlet branches may be the same. By adopting the design, the embodiment of the application can be suitable for various processes, so that the application range and the applicability are greatly improved.

It should be noted that the embodiments of the present application are not limited to the specific implementation of the air intake assembly 3, for example, the air intake assembly 3 may include a plurality of air intake branches for introducing a plurality of gases of the same type or different types. Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust the settings according to actual situations.

In an embodiment of the present application, as shown in fig. 1 and 2, the air inlet tube assembly 1 includes at least one tapered tube 10, an air passage 11 is formed in the at least one tapered tube 10, a predetermined included angle is formed between an axis and any one of straight lines from the air inlet 12 to the air outlet 13 on an inner wall of the tapered tube 10, and a value of the predetermined included angle is smaller than 45 degrees.

As shown in fig. 1 and 2, the intake cylinder assembly 1 may include only one conical cylinder 10, and the conical cylinder may be a circular truncated cone structure made of metal. The tapered tube 10 has a hollow structure forming the gas passage 11, and the tapered tube 10 has an inlet port 12 and an outlet port 13 at both ends thereof. The inner diameter of the gas passage 11 changes linearly, but the present embodiment is not limited to this. Specifically, a preset included angle is formed between any one of straight lines from the air inlet 12 to the air outlet 13 on the inner wall of the tapered barrel 10 and the axis, and the value of the preset included angle may be smaller than 45 degrees. In other words, as shown in fig. 2, in the cross-sectional view of the tapered cylinder 10, a predetermined included angle is formed between the straight lines on the inner walls of both sides of the axis and the axis, and the predetermined included angle is smaller than 45 degrees. The tapered cylinder 10 is adopted and the inner diameter is gradually reduced so that the inner diameter of the gas passage 11 is gradually reduced in a linear state. In a specific embodiment of the present application, the inner diameter of the end of the conical cylinder 10 may be greater than 5mm (millimeter), i.e. the inner diameter of the gas outlet 13 is greater than 5mm, to avoid affecting the flow velocity of the gas; the total length of the conical cylinder 10 and the mounting sleeve 2 can be greater than 30mm to increase the flow velocity of the gas, thereby improving the gas intake efficiency of the embodiment of the present application. By adopting the design, the air inlet assembly 3 adopts the design of the conical cylinder, so that the manufacturing and application cost can be greatly reduced, and the fault rate can be greatly reduced due to the simple structure, so that the productivity of semiconductor process equipment is greatly improved.

The embodiment of the tapered cylinder 10 is not limited to the specific embodiment, and for example, the tapered cylinder 10 may be a cylindrical structure made of a non-metal material, and the inside of the cylindrical structure is opened with the gas passage 11. Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust the settings according to actual situations.

In one embodiment of the present application, as shown in fig. 3, the air inlet cylinder assembly 1 includes a plurality of conical cylinders 10, the plurality of conical cylinders 10 are connected end to end, and the sub air outlets 102 and the sub air inlets 101 of any two adjacent conical cylinders 10 have the same inner diameter.

Alternatively, the inner diameter variation state of the gas passage 11 is linearly smaller, non-linearly smaller, or indirectly smaller. Optionally, the air inlet cylinder assembly 1 further comprises a connecting pipe 15, and the connecting pipe 15 is used for connecting any two adjacent conical cylinders 10.

As shown in fig. 1 to 3, in order to enhance the tangential spin velocity of the gas before entering the process chamber 200, the gas inlet barrel assembly 1 may include a plurality of tapered barrels 10, and the plurality of tapered barrels 10 may be arranged in an end-to-end manner. The inner diameter change state of the gas passage 11 in the intake cylinder module 1 is indirectly reduced, but the present embodiment is not limited to this. For example, the inner diameter of the gas passage 11 may be changed to a non-linear decreasing state, and thus the embodiment of the present application is not limited thereto. Specifically, the air inlet cylinder assembly 1 may include two tapered cylinders 10 arranged from top to bottom, the sub air inlet 101 of the tapered cylinder 10 located above serves as the air inlet 12 of the air inlet cylinder assembly 1, and the sub air outlet 102 of the tapered cylinder 10 located below serves as the air outlet 13 of the air inlet cylinder assembly 1; the top of the cone-shaped cylinder 10 at the upper part is provided with a mounting sleeve 2 and an air inlet component 3, and the cone-shaped cylinder 10 at the lower part can be connected with the cone-shaped cylinder 10 at the upper part through a connecting pipe 15. In addition, when the air intake cylinder assembly 11 includes two or more tapered cylinders 10, the sub air outlet 102 of the lowermost tapered cylinder 10 serves as the air outlet 13 of the air intake cylinder assembly 1. For convenience of installation, the inner diameter of the sub gas outlet 102 of the conical cylinder 10 located above is the same as that of the sub gas inlet 101 of the conical cylinder 10 located below, and the inner diameter of the connecting pipe 15 may be a constant inner diameter, so that the inner diameter of the gas passage 11 is indirectly reduced due to the provision of the connecting pipe 15. The non-linear reduction of the gas passage 11 means that the inner diameter of the gas passage 11 is reduced as a whole, but the reduction range is different, and specifically, the gas passage may be formed by machining in a single tapered cylinder 10, or may be formed by combining a plurality of tapered cylinders 10, which is not limited in the embodiment of the present application.

In practical applications, the gas enters the upper conical cylinder 10 through the air intake assembly 3 and the mounting sleeve 2, is accelerated and generates a vortex flow through the guiding of the conical cylinder 10, and then further enhances the vortex angular momentum and the forward momentum of the gas through the lower conical cylinder 10. Further, the air inlet barrel assembly 1 may include only two or more tapered barrels 10, and the preset angles of the different tapered barrels 10 may be the same or different, but the preset angle of each tapered barrel 10 is less than 45 degrees. In one embodiment of the present application, the total length of the air inlet barrel assembly 1 is greater than 30mm, and usually greater than 50mm, and the inner diameter of the air outlet 13 of the air inlet barrel assembly 1 may be greater than 3mm, and usually greater than 5 mm. However, the embodiment of the present application does not limit the specific specification of the air intake barrel assembly 1, and those skilled in the art can adjust the setting according to the actual situation.

It should be noted that the embodiments of the present application are not limited to all embodiments that necessarily include the mounting sleeve 2 and the connecting tube 15, and for example, in some embodiments, both may be omitted. Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust the settings according to actual situations.

In an embodiment of the present application, as shown in fig. 4 and 5, the spiral line set 14 includes a plurality of spiral lines 141, each of the spiral lines 141 extends from the air inlet 12 to the air outlet 13, and the spiral lines 141 are uniformly distributed on the inner wall of the air inlet barrel assembly 1. Alternatively, the plurality of spiral lines 141 are female lines concavely provided on the inner wall of the air intake barrel assembly 1 and/or male lines convexly provided on the inner wall. Alternatively, the number of the plurality of spirals 141 is 6 or more.

As shown in fig. 1 to 5, the spiral wire set 14 is disposed on the inner wall of the tapered barrel 10, and the perspective schematic view of the cooperation between the spiral wire set 14 and the tapered barrel 10 specifically refers to fig. 4, where the spiral wire set 14 may specifically include 6 or more than 6 spiral wires 141 uniformly distributed, and the spiral wires 141 may extend from the air inlet 12 to the air outlet 13, but the embodiment of the present application is not limited thereto, for example, the spiral wires 141 may also extend from the inside of the mounting sleeve 2 to the air outlet 13. It should be noted that the embodiment of the present application does not limit the specific number of the spiral lines 141, and a person skilled in the art can adjust the setting according to actual situations. Fig. 5 is a schematic sectional view taken along the direction a-a in fig. 4, a plurality of spiral lines 141 are disposed on the inner wall of the conical cylinder 10, and the plurality of spiral lines 141 may be female lines concavely disposed on the inner wall, or male lines convexly disposed on the inner wall, or a combination of the female lines and the male lines, so that the embodiment of the present application is not limited thereto.

In practical use, after the gas enters the conical cylinder 10 through the air inlet assembly 3 and the mounting sleeve 2, the gas spirally advances under the guiding action of the spiral line group 14, so that the gas generates vortex, and the vortex has vertical angular momentum. Meanwhile, due to the fact that the inner diameter of the gas channel 11 is gradually reduced on the gas flow path, the gas is further compressed and accelerated under the extrusion effect of the gas channel 11, and a larger spinning speed and a larger flow speed are generated. After the gas is injected into the process chamber 200 via vortex acceleration, the gas will continue to maintain a vortex flow inside the process chamber and over the surface of the wafer 300 due to the principle of conservation of angular momentum. Referring to fig. 1 and 6 in combination, after the gas enters the process chamber 200 through the gas inlet mechanism 100, a vortex flow is maintained on the surface of the wafer 300, as indicated by the black arrows, and finally the gas is pumped out of the lower portion of the process chamber 200 through the pumping ports 202. Because the gas flows in the process chamber 200 in a swirling manner, the flow path length and turbulence degree of the gas in the process chamber 200 can be greatly increased, so that the diffusion and mixing effects of the gas in the process chamber 200 are enhanced, and the saturation adsorption time of the reaction gas and the purging time of the purging gas on the process chamber 200 can be further shortened.

Based on the same inventive concept, embodiments of the present application provide a semiconductor processing apparatus, which includes a gas supply source, a processing chamber, and a gas inlet mechanism in the semiconductor processing apparatus as described in the above embodiments, wherein the gas inlet is connected to the gas supply source of the semiconductor processing apparatus, and the gas outlet is connected to the top of the processing chamber.

By applying the embodiment of the application, at least the following beneficial effects can be realized:

according to the gas inlet cylinder assembly, the inner diameter of the gas passage is changed, the spiral line group is arranged on the inner wall of the gas inlet cylinder assembly, so that the flowing speed of gas can be greatly improved, and the gas in the gas passage and the process chamber can generate vortex. The gas inlet mechanism improves the gas flow speed and enables the gas to generate vortex, so that the flow path length and the turbulence degree of the gas in the process chamber are greatly increased, the diffusion and mixing effects of the gas in the process chamber are enhanced, the saturated adsorption time of the gas and the purging time of the process chamber are greatly shortened, the capacity of semiconductor process equipment is greatly improved, and the application cost of the equipment can be effectively reduced.

It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.

In the description of the present application, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, should not be construed as limiting the present invention.

The terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified.

In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in a specific case to those of ordinary skill in the art.

The particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.

The foregoing is only a partial embodiment of the present application, and it should be noted that, for those skilled in the art, several modifications and decorations can be made without departing from the principle of the present application, and these modifications and decorations should also be regarded as the protection scope of the present application.

Claims

1. A gas inlet mechanism is arranged on a process chamber of semiconductor process equipment and used for introducing gas into the process chamber, and is characterized by comprising a gas inlet cylinder assembly;

a gas passage is formed in the gas inlet cylinder assembly, and a gas inlet and a gas outlet are respectively arranged at two ends of the gas inlet cylinder assembly; the inner diameter of the gas passage becomes smaller in the direction from the gas inlet to the gas outlet; the gas inlet is connected with a gas supply source of the semiconductor processing equipment, and the gas outlet is connected with the top of the process chamber;

the inner wall of the gas inlet cylinder assembly is also provided with a spiral line group, and the spiral line group is used for generating vortex of gas flowing through the gas passage so that the gas entering the process chamber is in a vortex state;

the spiral line group comprises a plurality of spiral lines, and the spiral lines are concavely arranged on female lines and/or convexly arranged on the inner wall of the air inlet cylinder assembly.

2. The gas inlet mechanism of claim 1, further comprising a mounting sleeve and a gas inlet assembly connected to each other, wherein the mounting sleeve is connected to the gas inlet, the gas inlet assembly is connected to a gas supply source of the semiconductor processing equipment, and the gas inlet assembly is configured to introduce gas into the gas inlet barrel assembly through the mounting sleeve.

3. The air inlet mechanism as claimed in claim 2, wherein the air inlet assembly comprises a main pipeline and at least two air inlet branches communicated with the main pipeline, and the main pipeline is arranged in the middle of the top surface of the mounting sleeve; at least two air inlet branch circuits are arranged between the air supply source and the main pipeline and used for leading gas into the main pipeline.

4. The intake mechanism as claimed in claim 1, wherein the intake barrel assembly includes at least one tapered barrel, the gas passage is formed in the at least one tapered barrel, a predetermined included angle is formed between an axis and any one of straight lines from the gas inlet to the gas outlet on an inner wall of the tapered barrel, and the value of the predetermined included angle is less than 45 degrees.

5. The intake mechanism as claimed in claim 4, wherein the intake barrel assembly includes a plurality of conical barrels, the two ends of the conical barrels are respectively a sub-intake port and a sub-exhaust port, the plurality of conical barrels are connected end to end, and the inner diameters of the sub-exhaust ports and the sub-intake ports of any two adjacent conical barrels are the same.

6. The intake mechanism according to claim 5, wherein the change state of the inner diameter of the gas passage is linearly smaller, non-linearly smaller, or indirectly smaller.

7. The intake mechanism as claimed in claim 5, wherein the intake barrel assembly further comprises a connecting pipe for connecting any two adjacent ones of the tapered barrels.

8. The intake mechanism as claimed in claim 1, wherein a plurality of said helical wires each extend from said intake port to said exhaust port, and wherein said plurality of helical wires are evenly distributed about an inner wall of said intake barrel assembly.

9. Semiconductor processing equipment comprising a gas supply, a process chamber and a gas inlet mechanism according to any one of claims 1 to 8, wherein the gas inlet is connected to the gas supply of the semiconductor processing equipment and the gas outlet is connected to the top of the process chamber.