CN115206845B - Gas inlet device for semiconductor reaction equipment and semiconductor reaction equipment - Google Patents
Gas inlet device for semiconductor reaction equipment and semiconductor reaction equipment Download PDFInfo
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- CN115206845B CN115206845B CN202210873282.0A CN202210873282A CN115206845B CN 115206845 B CN115206845 B CN 115206845B CN 202210873282 A CN202210873282 A CN 202210873282A CN 115206845 B CN115206845 B CN 115206845B
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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Abstract
The invention relates to an air inlet device for semiconductor reaction equipment and the semiconductor reaction equipment, wherein the air inlet device for the semiconductor reaction equipment comprises an air mixing part and an air inlet part, the air mixing part comprises at least two air inlet pipes and an air mixing cavity, the at least two air inlet pipes are communicated with the air mixing cavity, the air mixing cavity is provided with at least two air outlet holes, the air inlet part is arranged at the top of the reaction cavity of the semiconductor reaction equipment, the air inlet part comprises a cavity, the at least two air outlet holes are communicated with the cavity, and the radial size of the cavity is larger than that of the air mixing cavity. The invention can reduce the obstruction to the process gas flow and simultaneously improve the gas mixing efficiency of the process gas flow.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to an air inlet device for semiconductor reaction equipment and the semiconductor reaction equipment.
Background
For the semiconductor reaction equipment in the prior art, two process gases are independently fed through a main pipeline and four branch pipelines respectively, the top ends of the four branch pipelines are connected with the main pipeline, the bottom ends of the four branch pipelines are connected with the top of an annular cavity, and a plurality of transverse small holes arranged on the uniform gas sieve spray the process gases, so that the reaction with wafers is realized. However, since the two process gases are simply merged by using the pipeline and the annular cavity, the process gases may collide in the annular cavity, and the process gases may also impinge on the side wall of the annular cavity, so that the gas concentration in the annular cavity is not uniform, and meanwhile, the gas homogenizing screen may hinder the process gas flow. This not only reduces the gas mixing efficiency, but also causes the concentration of the process gas reaching the wafer surface to be uneven, resulting in poor film formation uniformity.
Disclosure of Invention
The invention aims to provide a gas inlet device for a semiconductor reaction device and the semiconductor reaction device, so as to reduce the obstruction of process gas flow and improve the gas mixing efficiency of the process gas flow.
The object of the present invention is achieved by the following technical means. The air inlet device for the semiconductor reaction equipment comprises an air mixing part and an air inlet part, wherein the air mixing part comprises at least two air inlet pipes and an air mixing cavity, the air inlet pipes are communicated with the air mixing cavity, the air mixing cavity is provided with at least two air outlet holes, the air inlet part comprises a cavity, the air outlet holes are communicated with the cavity, the cavity is communicated with the reaction cavity of the semiconductor reaction equipment, and the radial size of the cavity is larger than that of the air mixing cavity.
In some embodiments, the axis of the air mixing chamber is perpendicular to the axis of the chamber.
In some embodiments, the gas inlet device further includes a flow guide portion, the gas inlet portion is disposed at a top of the flow guide portion, and the flow guide portion is configured to guide gas flowing out of the chamber of the gas inlet portion to an interior of a reaction chamber of the semiconductor reaction apparatus.
In some embodiments, a valve port is opened at the top of the flow guide portion, at least two second through holes are opened inside the valve port, the second through holes are communicated with the chamber, and the second through holes are further communicated with a reaction cavity of the semiconductor reaction device.
In some embodiments, the flow guide portion further comprises a flow guide plate located below the second through hole, the flow guide plate and the second through hole each being at 45 °.
In some embodiments, the gas mixing portion further includes a gas passage configured in an annular shape, the gas passage communicating the gas inlet pipe with the gas mixing chamber.
In some embodiments, the inner wall of the gas channel has an inner layer and an outer layer, the inner wall has at least two first gas holes and at least two second gas holes, and the diameters of the first gas holes and the second gas holes are configured to gradually decrease from the inner layer to the outer layer, so that the first gas holes form a first vertex angle and the second gas holes form a second vertex angle.
In some embodiments, the first air holes and the second air holes are arranged in pairs, the first top corners of the first air holes being oppositely oriented to the second top corners of the second air holes.
In some embodiments, the first vertex angle and the second vertex angle are both 45 degrees
The invention also provides semiconductor reaction equipment which comprises the gas inlet device for the semiconductor reaction equipment.
The beneficial effects of the invention at least comprise:
1. mix gas portion includes two at least intake pipes and mixes the gas chamber, and two at least intake pipes all communicate with mixing the gas chamber, and different process gas enters into mixing the gas chamber via the intake pipe after, can be in the inside in mixing the gas chamber by intensive mixing to make different process gas in the inside evenly distributed who mixes the gas chamber.
2. Because the radial dimension of the cavity is larger than that of the gas mixing cavity, after the process gas flows out of the second end of the gas mixing cavity and enters the cavity, the cavity cannot obstruct the flow of the process gas, and therefore the flow of the process gas cannot be obstructed.
3. Through making guide plate and second through-hole be 45 to make the guide plate can be with spraying the leading-in to semiconductor reaction equipment's reaction intracavity of process gas on the guide plate surface with the ascending angle of slope, make the gas that gets into in the reaction chamber be located the top of reaction chamber, thereby be convenient for the even diffusion of process gas in the reaction chamber.
4. Through constructing the gas passage into annular for the different process gas that gets into in the gas passage from two intake pipes flows but does not mix in annular gas passage, can prevent that the air current of different process gas from taking place the offset in mixing the gas intracavity after the annular gas passage outflow.
5. The first air holes and the second air holes are arranged in pairs, the first vertex angles of the first air holes and the second vertex angles of the second air holes are opposite in orientation, the first vertex angles and the second vertex angles are 45 degrees, air flow can flow along the outer layer of the inner wall of the air channel, air flow flowing out of the first air holes and the second air holes can form better vortex, and air mixing is more sufficient.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical solutions of the present invention more clearly understood, the present invention may be implemented in accordance with the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more clearly understood, the following preferred embodiments are specifically described below with reference to the accompanying drawings.
Drawings
FIG. 1 is a schematic perspective view illustrating a gas inlet apparatus for a semiconductor reaction device according to an embodiment of the present invention;
FIG. 2 is another perspective view illustrating a gas inlet device for a semiconductor reaction apparatus according to an embodiment of the present invention;
FIG. 3 is a schematic perspective view illustrating a gas mixing part of a gas inlet apparatus for a semiconductor reaction device according to an embodiment of the present invention;
FIG. 4 is a schematic sectional view showing a gas inlet means for a semiconductor reaction apparatus according to an embodiment of the present invention;
FIG. 5 shows a schematic perspective view of a gas channel and a gas mixing chamber according to an embodiment of the invention;
fig. 6 shows a schematic configuration of a gas mixing section according to another embodiment of the present invention.
Detailed Description
To further illustrate the technical means of the present invention, the following detailed description of an air inlet device for a semiconductor reaction apparatus and a semiconductor reaction apparatus according to the present invention will be given with reference to the accompanying drawings and preferred embodiments.
As shown in fig. 1, 2 and 3, an air inlet device for a semiconductor reaction apparatus according to the present invention includes an air mixing portion 1 and an air inlet portion 2, wherein the air mixing portion 1 is configured in a cylindrical shape, the air inlet portion 2 is configured in a rectangular parallelepiped shape, a first through hole 23 for accommodating the air mixing portion 1 is formed in a middle portion of a side surface of the air inlet portion 2, screw holes are formed in both sides of the first through hole 23, and the air mixing portion 1 is fixed to the middle portion of the side surface of the air inlet portion 2 by screws. In some other embodiments, the air mixing portion 1 may also be fixed to the middle of the side surface of the air intake portion 2 by welding or snap-fitting.
As shown in fig. 3, the gas mixing portion 1 includes at least two gas inlet pipes 11 and a gas mixing cavity 12, wherein the at least two gas inlet pipes 11 are both communicated with the gas mixing cavity 12, each of the at least two gas inlet pipes 11 is vertically arranged relative to the gas mixing cavity 12, and each of the at least two gas inlet pipes 11 is used for introducing different process gases, for example, in the two gas inlet pipes 11 shown in fig. 3, one of the gas inlet pipes 11 can be introduced with nitrogen, and the other gas inlet pipe 11 can be introduced with hydrogen. Because at least two intake pipes 11 all communicate with gas mixing chamber 12, consequently, different process gas can be by intensive mixing in the inside of gas mixing chamber 12 after entering into gas mixing chamber 12 via intake pipe 11 to make different process gas at the inside evenly distributed of gas mixing chamber 12.
As shown in fig. 3, in a preferred embodiment, at least two air inlet pipes 11 are disposed at a first end of the air mixing chamber 12, and a second end of the air mixing chamber 12 is provided with at least two air outlet holes 121, and the at least two air outlet holes 121 are uniformly arranged along the periphery of the second end of the air mixing chamber 12.
As shown in fig. 1, 2 and 4, the gas inlet part 2 is disposed at the top of the reaction chamber of the semiconductor reaction apparatus, the gas inlet part 2 includes a chamber 21, in a preferred embodiment, the chamber 21 is configured in a cylindrical shape, the axis of the gas mixing chamber 12 is perpendicular to the axis of the chamber 21, and the radial dimension of the chamber 21 is larger than the radial dimension of the gas mixing chamber 12. The second end of the air mixing chamber 12 passes through the first through hole 23 and is received in the chamber 21, and at least two air outlet holes 121 communicate with the chamber 21. The process gas enters the gas mixing cavity 12 from the at least two gas inlet pipes 11 to be mixed, and then flows out from the gas outlet hole 121 at the second end of the gas mixing cavity 12 to enter the cavity 21, and because the radial size of the cavity 21 is larger than that of the gas mixing cavity 12, after the process gas flows out from the second end of the gas mixing cavity 12 and enters the cavity 21, the cavity 21 cannot obstruct the flow of the process gas, and thus the flow of the process gas cannot be obstructed.
As shown in fig. 1 and 2, the gas inlet device for a semiconductor reaction apparatus according to the present invention further includes a flow guiding portion 3, and the flow guiding portion 3 is used for guiding the process gas flowing out from the chamber 21 to the inside of the reaction chamber of the semiconductor reaction apparatus. The air inlet 2 is fixed to the top of the guide 3 and sealed by a sealing ring 31. Specifically, the air inlet 2 further includes a main body 22, the chamber 21 is disposed in the center of the inside of the main body 22, and both ends of the main body 22 are fixed to the top of the flow guide 3 by screws or snaps. The top of the flow guiding part 3 is opened with a valve port 32, at least two second through holes 33 are opened inside the valve port 32, and the second through holes 33 have a certain length and are vertically and uniformly arranged inside the valve port 32. The seal ring 31 surrounds the valve port 32 to seal between the intake portion 2 and the guide portion 3.
As shown in fig. 2 and 4, the guiding part 3 further includes a baffle 34, the baffle 34 is obliquely disposed at the bottom of the at least two second through holes 33 and is spaced from the bottom of the second through holes 33, the baffle 34 and the second through holes 33 arranged in a vertical manner form an acute angle, and the process gas entering the guiding part 3 from the second through holes 33 is introduced into the reaction chamber of the semiconductor reaction equipment through the baffle 34. Preferably, the baffle plate 34 is at an angle of 45 ° with the second through hole 33, so that the baffle plate 34 can introduce the process gas injected onto the surface of the baffle plate 34 into the reaction chamber of the semiconductor reaction apparatus at an upward-inclined angle, so that the gas entering the reaction chamber is located above the reaction chamber, thereby facilitating the uniform diffusion of the process gas in the reaction chamber.
In a preferred embodiment, as shown in fig. 5, the gas mixing portion 1 of the present invention further comprises a gas channel 13, wherein the gas channel 13 is used for communicating at least two gas inlet pipes 11 with the gas mixing chamber 12 and preventing the gas flow from rushing out. The air inlet pipe 11 is communicated with an air channel 13, and the air channel 13 is communicated with the gas mixing cavity 12. The gas channel 13 is configured in a ring shape, and different process gases entering the gas channel 13 from the gas inlet pipe 11 flow in the ring-shaped gas channel 13 without mixing, so that the gas flows of the different process gases can be prevented from generating opposite impact in the gas mixing cavity 12 after flowing out from the ring-shaped gas channel 13.
The gas channel 13 has an inner wall and an outer wall, and since the inner wall of the gas channel 13 has a certain thickness, a layer of the inner wall of the gas channel 13 close to the gas mixing chamber 12 is defined as an outer layer, and a layer of the inner wall of the gas channel 13 far from the gas mixing chamber 12 is defined as an inner layer. The outer layer of the inner wall of the gas channel 13 forms the periphery of the gas mixing cavity 12, at least two first air holes 131 and at least two second air holes 132 are opened on the inner wall of the gas channel 13, and the gas channel 13 is communicated with the gas mixing cavity 12 through the first air holes 131 and the second air holes 132. The longitudinal cross sections of the first air holes 131 and the second air holes 132 are triangular, specifically, the diameters of the first air holes 131 and the second air holes 132 are configured to be gradually reduced from the inner layer to the outer layer, so that the first air holes 131 and the second air holes 132 have a good flow guiding effect, the first air holes 131 form a first vertex angle 1311, the second air holes 132 form a second vertex angle 1321, and the angles of the first vertex angle 1311 and the second vertex angle 1321 are preferably 45 degrees, so that the air flow can flow along the outer layer of the inner wall of the air channel 13. If the angle is too large, the gas flow flowing out from the first gas hole 131 and the second gas hole 132 directly hits the outer layer of the inner wall of the gas channel 13, so that the flow resistance of the process gas is large, which is not favorable for mixing gas in the gas mixing chamber 12, and if the angle of the vertex angle is too small, the first vertex angle 1311 and the second vertex angle 1321 themselves may block the gas flow.
The first air holes 131 and the second air holes 132 are arranged in pairs and the first air holes 131 and the second air holes 132 are opened in different directions. The first and second air holes 131 and 132 arranged in pairs have a small height difference and a small distance difference therebetween, which are such that the flows of the process gases flowing out of the first and second air holes 131 and 132 can form a vortex. The first air hole 131 may be located above the second air hole 132, and in some other embodiments, the first air hole 131 may also be located below the second air hole 132. In a preferred embodiment, the first vertex 1311 of the first air hole 131 and the second vertex 1321 of the second air hole 132 are oppositely oriented, so that the air flow flowing out of the first air hole 131 and the second air hole 132 can be more effectively whirled, and the air mixing is more sufficient.
As shown in fig. 6, the gas mixing portion according to another embodiment of the present invention includes a first gas inlet pipe 111, a second gas inlet pipe 112, a first gas mixing side wall 113, a second gas mixing side wall 114, a third gas mixing side wall 115, and a gas outlet portion 116, wherein the first gas inlet pipe 111 and the second gas inlet pipe 112 are used for introducing different process gases, for example, nitrogen may be introduced into the first gas inlet pipe 111, and hydrogen may be introduced into the second gas inlet pipe 112.
The first air inlet pipe 111 and the second air inlet pipe 112 are both spiral pipes, and are used for enabling the air flow flowing out of the outlet of the first air inlet pipe 111 and the air flow flowing out of the outlet of the second air inlet pipe 112 to rotate along the same direction. Illustratively, the first intake pipe 111 is a 90 ° spiral pipe, and the second intake pipe 112 is a 270 ° spiral pipe, so that the airflows flowing out from the outlet of the first intake pipe 111 and the airflow flowing out from the outlet of the second intake pipe 112 can rotate in the same direction, and the opposite impacts of the airflows are avoided. The outlets of the first air inlet pipe 111 and the second air inlet pipe 112 are disposed at a first end of the first air mixing side wall 113, a second end of the first air mixing side wall 113 is connected with a first end of the second air mixing side wall 114, a second end of the second air mixing side wall 114 is connected with a first end of the third air mixing side wall 115, and a second end of the third air mixing side wall 115 is connected with the air outlet portion 116. The first air mixing side wall 113, the second air mixing side wall 114 and the third air mixing side wall 115 form an air mixing cavity, an air passage of the first air mixing side wall 113 is gradually narrowed from the first end to the second end, an air passage of the second air mixing side wall 114 is unchanged from the first end to the second end, and an air passage of the third air mixing side wall 115 is gradually widened from the first end to the second end.
The air flow of the process gas flows into the first gas mixing side wall 113 along the first gas inlet pipe 111 and the second gas inlet pipe 112, and is mixed in the air passage of the first gas mixing side wall 113 for the first time, and the mixed air flow is mixed in the air passage of the second gas mixing side wall 114 for the second time. Then, the gas flow enters the third gas mixing side wall 115, the flow rate of the process gas is reduced due to the gradual widening of the gas channel of the third gas mixing side wall 115, the gas flow of the process gas is third gas mixed in the gas channel of the third gas mixing side wall 115, the gas flow is further more uniform, and finally, the gas flow flows out of the gas outlet portion 116 and enters the flow guide portion 3.
The invention also comprises a semiconductor reaction device which comprises the gas inlet device for the semiconductor reaction device.
The use of words such as "including," having, "and the like in connection with the present invention is an open-ended word that refers to and is used interchangeably with" including, but not limited to. The words "or" and "as used herein mean, and are used interchangeably with, the word" and/or, "unless the context clearly dictates otherwise.
The previous description of the disclosed aspects is provided to enable any person skilled in the art to practice the present invention. Various modifications to these aspects will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other aspects without departing from the scope of the invention. Thus, the present invention is not intended to be limited to the aspects shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
The terms "first", "second" and "first" in the present description are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to implicitly indicate the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more than two of that feature.
Claims (8)
1. The air inlet device for the semiconductor reaction equipment is characterized by comprising an air mixing part and an air inlet part, wherein the air mixing part comprises at least two air inlet pipes and an air mixing cavity, the air inlet pipes are communicated with the air mixing cavity, the air mixing cavity is provided with at least two air outlet holes, the air inlet part comprises a cavity, the air outlet holes are communicated with the cavity, the cavity is communicated with the reaction cavity of the semiconductor reaction equipment, and the radial size of the cavity is larger than that of the air mixing cavity;
the gas mixing part further comprises a gas channel, the gas channel is in an annular shape, the gas channel enables the gas inlet pipe to be communicated with the gas mixing cavity, the inner wall of the gas channel is provided with an inner layer and an outer layer, at least two first gas holes and at least two second gas holes are formed in the inner wall, the aperture of the first gas holes and the aperture of the second gas holes are gradually reduced from the inner layer to the outer layer, so that the first gas holes form first vertex angles, and the second gas holes form second vertex angles.
2. The gas inlet apparatus for a semiconductor reaction device according to claim 1, wherein an axis of the gas mixing chamber is perpendicular to an axis of the chamber.
3. The gas inlet device for semiconductor reaction equipment according to claim 1, further comprising a flow guide part, wherein the gas inlet part is disposed on the top of the flow guide part, and the flow guide part is used for guiding gas flowing out of the chamber of the gas inlet part to the inside of the reaction chamber of the semiconductor reaction equipment.
4. The gas inlet device for semiconductor reaction equipment as claimed in claim 3, wherein a valve port is formed at the top of the flow guide portion, at least two second through holes are formed inside the valve port, the second through holes are communicated with the chamber, and the second through holes are further communicated with the reaction chamber of the semiconductor reaction equipment.
5. The gas inlet device for a semiconductor reaction equipment as claimed in claim 4, wherein the flow guide part further comprises a flow guide plate, the flow guide plate is positioned below the second through hole, and the flow guide plate and the second through hole are both at 45 degrees.
6. The gas inlet device for a semiconductor reaction equipment according to claim 1, wherein the first gas holes and the second gas holes are arranged in pairs, and the first top corners of the first gas holes are opposite to the second top corners of the second gas holes in orientation.
7. The gas inlet device for semiconductor reaction equipment according to claim 1, wherein the first vertex angle and the second vertex angle are both 45 °.
8. A semiconductor reaction apparatus, comprising the gas inlet device for a semiconductor reaction apparatus according to any one of claims 1 to 7.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210873282.0A CN115206845B (en) | 2022-07-22 | 2022-07-22 | Gas inlet device for semiconductor reaction equipment and semiconductor reaction equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210873282.0A CN115206845B (en) | 2022-07-22 | 2022-07-22 | Gas inlet device for semiconductor reaction equipment and semiconductor reaction equipment |
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| CN115206845A CN115206845A (en) | 2022-10-18 |
| CN115206845B true CN115206845B (en) | 2023-03-07 |
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| CN106669475A (en) * | 2015-11-09 | 2017-05-17 | Asm Ip控股有限公司 | Counter flow mixer for process chamber |
| CN208815113U (en) * | 2018-05-11 | 2019-05-03 | 昆山彰盛奈米科技有限公司 | A kind of super large vertical film plating machine and filming equipment |
| CN113430502A (en) * | 2021-06-18 | 2021-09-24 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and mixed air inlet device thereof |
| WO2022077637A1 (en) * | 2020-10-13 | 2022-04-21 | 东部超导科技（苏州）有限公司 | Spraying plate, mocvd reaction system having spraying plate, and use method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113467198B (en) * | 2020-03-31 | 2023-04-18 | 长鑫存储技术有限公司 | Semiconductor device and method for manufacturing semiconductor structure |
| CN114210217B (en) * | 2021-12-14 | 2024-08-13 | 拓荆科技股份有限公司 | Semiconductor processing equipment and gas mixing device thereof |
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- 2022-07-22 CN CN202210873282.0A patent/CN115206845B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106669475A (en) * | 2015-11-09 | 2017-05-17 | Asm Ip控股有限公司 | Counter flow mixer for process chamber |
| CN208815113U (en) * | 2018-05-11 | 2019-05-03 | 昆山彰盛奈米科技有限公司 | A kind of super large vertical film plating machine and filming equipment |
| WO2022077637A1 (en) * | 2020-10-13 | 2022-04-21 | 东部超导科技（苏州）有限公司 | Spraying plate, mocvd reaction system having spraying plate, and use method thereof |
| CN113430502A (en) * | 2021-06-18 | 2021-09-24 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and mixed air inlet device thereof |
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