TW201625811A - Reaction gas delivery device and chemical vapor deposition or epitaxial layer growth reactor - Google Patents

Reaction gas delivery device and chemical vapor deposition or epitaxial layer growth reactor Download PDF

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TW201625811A
TW201625811A TW104128509A TW104128509A TW201625811A TW 201625811 A TW201625811 A TW 201625811A TW 104128509 A TW104128509 A TW 104128509A TW 104128509 A TW104128509 A TW 104128509A TW 201625811 A TW201625811 A TW 201625811A
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gas
elongated
groove
gas diffusion
longitudinal
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TWI576462B (en
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Yin-Xin Jiang
Zhi You Du
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Advanced Micro Fab Equip Inc
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Abstract

The present invention discloses a gas delivery device for chemical vapor deposition or epitaxial layer growth reactors, comprising a spacer plate and a gas delivery plate; the spacer plate is formed thereon with a first gas diffusion zone, and a second gas diffusion zone is formed between the spacer plate and the gas delivery plate; longitudinally elongated first gas diffusion grooves and longitudinally elongated second gas diffusion grooves are alternately disposed in parallel to each other on an upper surface of the gas delivery plate, both the first and second gas diffusion grooves having bottoms respectively provided with a first gas outlet passage and a second gas outlet passage used for respectively transporting the gas in the first gas diffusion zone and the gas in the second gas diffusion zone to the processing area; the lower surface of the gas delivery plate between the adjacent first gas outlet passage and second gas outlet passage is curved or tip-tapered in shape.

Description

反應氣體輸送裝置及化學氣相沉積或磊晶層成長反應器Reaction gas delivery device and chemical vapor deposition or epitaxial layer growth reactor

本發明涉及製造半導體器件,尤其涉及一種在諸如基板等襯底上成長磊晶層或進行化學氣相沉積的裝置。The present invention relates to the manufacture of semiconductor devices, and more particularly to an apparatus for growing an epitaxial layer or performing chemical vapor deposition on a substrate such as a substrate.

在諸如基板上成長磊晶層或進行化學氣相沉積的生產過程中,反應器的設計十分關鍵。現有技術中,反應器有各種各樣的設計,包含:水平式反應器,該反應器中,基板被安裝成與流入的反應氣體成一定角度;行星式旋轉的水平式反應器,該反應器中,反應氣體水平通過基板;以及垂直式反應器,該反應器中,當反應氣體向下注入到基板上時,基板被放置在反應腔內的基板承載架上並以相對較高的速度旋轉。該種高速旋轉的垂直式反應器為商業上最重要的MOCVD反應器之一。The design of the reactor is critical in production processes such as growing an epitaxial layer on a substrate or performing chemical vapor deposition. In the prior art, the reactor has various designs, including: a horizontal reactor in which the substrate is installed at an angle to the inflowing reaction gas; a planetary rotating horizontal reactor, the reactor a reaction gas level passing through the substrate; and a vertical reactor in which, when the reaction gas is injected down onto the substrate, the substrate is placed on the substrate carrier in the reaction chamber and rotated at a relatively high speed . This high speed rotating vertical reactor is one of the most commercially important MOCVD reactors.

垂直式反應器中反應氣體輸送裝置的結構是最為重要的設計之一,磊晶成長製程或者化學氣相沉積製程通常需要至少兩組反應氣體,在實際應用中,優選地,反應氣體在進入反應腔前不能混合,因此人們提出各種各樣的氣體噴淋頭設計來保證兩組反應氣體在進入反應腔前保持相互隔離。此外,有效地對氣體噴淋頭進行冷卻對反應製程也有很好的幫助,在很多應用中採用包含水在內的流體進行冷卻。The structure of the reaction gas delivery device in the vertical reactor is one of the most important designs. The epitaxial growth process or the chemical vapor deposition process usually requires at least two sets of reaction gases. In practical applications, preferably, the reaction gas enters the reaction. There is no mixing in front of the cavity, so various gas sprinkler designs have been proposed to ensure that the two sets of reactive gases remain isolated from each other before entering the reaction chamber. In addition, effective cooling of the gas shower head is also very helpful for the reaction process, and in many applications, fluids including water are used for cooling.

現有技術中,大部分氣體輸送裝置設計是採用氣體輸送管道實現對不同反應氣體的輸送,將很多元件焊接加工在一起,不僅提高了加工製作難度,還會因為氣體輸送管道與不同氣體的間隔板間密封效果不好,增加氣體洩漏的風險;在另一些設計中,提供了一種氣體輸送裝置,其通過將複數個中空的長形管狀的氣體分佈元件肩並肩地並排、間隔地焊接而成,同時在長形管狀氣體分佈元件下方焊接有氣體擴散器及冷卻管道等元件,但這些焊接元件極易導致漏水、漏氣,並且在加工焊接時,不能保證各個進氣口元件的完全相同,因而,不能保證各個氣體輸送裝置的形狀尺寸一致,此外,在一段製程後,氣體輸送裝置容易變形,導致同一反應腔內的不同基板製程效果出現不同。如果各個氣體輸送裝置在加工時不能保證加工參數完全相同,在放置到反應器內時,不同反應器的加工製程將會不同,這會嚴重影響不同反應器內基板加工的均一性,造成一批基板(反應腔與腔之間)的處理結果不同。此外,在這些設計中,還存在著由於管狀氣體分佈元件之間的氣體擴散速度不同,而導致輸送到處理區域內的氣體不均勻的問題。In the prior art, most of the gas delivery devices are designed to use gas delivery pipes to realize the transportation of different reaction gases, and welding many components together, which not only improves the difficulty of processing, but also because of the gas transmission pipes and the partition plates of different gases. The inter-sealing effect is not good, increasing the risk of gas leakage; in other designs, a gas delivery device is provided by welding a plurality of hollow elongated tubular gas distribution elements side by side and side by side, At the same time, components such as a gas diffuser and a cooling pipe are welded under the elongated tubular gas distribution element, but these welded components are liable to cause water leakage and air leakage, and in processing and welding, it is impossible to ensure that the respective air inlet components are identical. The shape and size of each gas delivery device cannot be ensured. In addition, after a certain process, the gas delivery device is easily deformed, resulting in different process effects of different substrates in the same reaction chamber. If the gas delivery devices cannot guarantee the same processing parameters during processing, the processing of different reactors will be different when placed in the reactor, which will seriously affect the uniformity of substrate processing in different reactors, resulting in a batch of substrates. The processing results (between the reaction chamber and the cavity) are different. Further, in these designs, there is also a problem that the gas delivered into the treatment region is uneven due to the difference in gas diffusion speed between the tubular gas distribution members.

因此,業內亟需一種能在均勻提供反應氣體的同時,結構設計簡單,製程穩定性好的反應氣體輸送裝置。Therefore, there is a need in the industry for a reaction gas delivery device that is capable of uniformly providing a reaction gas while having a simple structural design and good process stability.

本發明的目的之一在於提供一種反應氣體輸送裝置,其整體結構設計簡單,加工製作簡單,並且經過長期的製程處理後不會發生變形、能有效避免反應氣體在進入處理區域前發生氣體洩漏、冷卻水洩漏,同時,能保證反應氣體進入處理區域的速率均勻可控,保證各反應腔內的不同基板的製程處理、反應腔與反應腔之間的基板製程處理的均一性。One of the objects of the present invention is to provide a reaction gas delivery device which has a simple overall structure design, is simple to process, and does not undergo deformation after long-term processing, and can effectively prevent gas leakage before the reaction gas enters the treatment area. The cooling water leaks, and at the same time, the rate of the reaction gas entering the treatment area is ensured to be uniform and controllable, and the process of different substrates in each reaction chamber and the uniformity of the substrate processing between the reaction chamber and the reaction chamber are ensured.

根據本發明的發明目的,本發明提供了一種反應氣體輸送裝置,用於化學氣相沉積或磊晶層成長反應器,包含:從上往下依次設置的一頂板、一隔離板及一氣體輸送板,所述頂板與所述隔離板相互間隔而在二者之間形成第一氣體擴散區域,所述隔離板及所述氣體輸送板相互間隔而在二者之間形成第二氣體擴散區域;According to an object of the present invention, the present invention provides a reaction gas delivery device for a chemical vapor deposition or epitaxial growth reactor comprising: a top plate, a separator, and a gas transport arranged in order from top to bottom a plate, the top plate and the partition plate are spaced apart from each other to form a first gas diffusion region therebetween, and the separator plate and the gas transport plate are spaced apart from each other to form a second gas diffusion region therebetween;

所述氣體輸送板為一體形成之板體,其包含一上表面,所述上表面上沿某一水平方向上開設有相互平行排列的複數個縱長形第一氣體擴散槽及複數個縱長形第二氣體擴散槽,並且各所述第一氣體擴散槽及各所述第二氣體擴散槽相互間隔排列設置,所述各第一氣體擴散槽下方還開設連接有一縱長形第一氣體出氣通道並且二者相連通,所述各第二氣體擴散槽下方還開設連接有一縱長形第二氣體出氣通道並且二者相連通;所述各第一氣體擴散槽及與之相鄰的各第二氣體擴散槽之間向下延伸設置有一縱長形的氣體導流條;所述各縱長形的氣體導流條內部設置有一縱長形的冷卻管道,所述各縱長形的氣體導流條的下表面設有具一定弧度的弧形或設為尖錐形;The gas conveying plate is an integrally formed plate body, and comprises an upper surface, wherein the upper surface is provided with a plurality of longitudinally elongated first gas diffusion grooves and a plurality of longitudinal lengths arranged in parallel with each other in a horizontal direction. Forming a second gas diffusion groove, and each of the first gas diffusion grooves and each of the second gas diffusion grooves are arranged at intervals with each other, and a vertically elongated first gas outlet is further connected below each of the first gas diffusion grooves. a channel and the two are connected to each other, and a second elongated gas outlet passage is connected under the second gas diffusion grooves and communicated with each other; the first gas diffusion grooves and the adjacent ones thereof An elongated gas guiding strip extends downwardly between the two gas diffusion grooves; and each of the elongated gas guiding strips is internally provided with an elongated cooling duct, and each of the elongated gas guides The lower surface of the flow bar is provided with a curved arc or a pointed cone;

所述各第一氣體擴散槽上還進一步連接設置有至少一根與所述第一氣體擴散區域相連通的第一氣體輸送管。Further, each of the first gas diffusion grooves is further connected with at least one first gas delivery pipe that communicates with the first gas diffusion region.

較佳地,所述各縱長形第一氣體出氣通道與所述各縱長形第二氣體出氣通道相互平行排列,並且相互間隔排列設置。Preferably, each of the elongated first gas outlet passages and the longitudinally elongated second gas outlet passages are arranged in parallel with each other and are arranged at intervals.

較佳地,所述縱長形第一氣體出氣通道為一縱長形的縫隙通道。Preferably, the elongated first gas outlet passage is a longitudinal slit passage.

較佳地,所述縱長形第二氣體出氣通道為一縱長形的縫隙通道。Preferably, the elongated second gas outlet passage is an elongated slit passage.

較佳地,所述縱長形第一氣體出氣通道包含複數個孔通道,所述複數個孔通道整體上構成一縱長形的出氣通道。Preferably, the elongated first gas outlet passage comprises a plurality of orifice passages, and the plurality of orifice passages integrally constitute a longitudinally-shaped outlet passage.

較佳地,所述縱長形第二氣體出氣通道包含複數個孔通道,所述複數個孔通道整體上構成一縱長形的出氣通道。Preferably, the elongated second gas outlet passage comprises a plurality of orifice passages, and the plurality of orifice passages integrally constitute a longitudinally-shaped outlet passage.

較佳地,所述各縱長形的氣體導流條位於各縱長形第一氣體出氣通道及各縱長形第二氣體出氣通道之間。Preferably, each of the elongated gas guiding strips is located between each of the elongated first gas outlet passages and each of the elongated second gas outlet passages.

較佳地,所述縱長形的氣體導流條的下表面為向反應氣體製程處理區域凸出的弧形表面。Preferably, the lower surface of the elongated gas guiding strip is an arcuate surface that protrudes toward the reactive gas processing region.

較佳地,所述縱長形的氣體導流條的下表面為向反應氣體製程處理區域凹陷的弧形表面。Preferably, the lower surface of the elongated gas guiding strip is an arcuate surface that is recessed toward the reactive gas processing region.

較佳地,所述向製程處理區域凹陷的弧形表面與所述第一氣體出氣通道及第二氣體出氣通道的通道側面連接處為弧形。Preferably, the arcuate surface recessed to the process processing region is curved at an intersection with the channel side of the first gas outlet passage and the second gas outlet passage.

較佳地,所述各縱長形的氣體導流條兩側分別連接一縱長形的子氣體導流條,所述氣體導流條與所述子氣體導流條相互平行並相互間隔一距離設置,二者之間形成一子氣體通道,所述子氣體通道與所述第一氣體出氣通道或第二氣體出氣通道在豎直的截面方向上呈一銳角。Preferably, each of the longitudinal gas guiding strips is connected to a longitudinally elongated gas guiding strip on both sides thereof, and the gas guiding strip and the sub-gas guiding strip are parallel to each other and spaced apart from each other. The distance is disposed to form a sub-gas passage therebetween, and the sub-gas passage and the first gas outlet passage or the second gas outlet passage have an acute angle in a vertical cross-sectional direction.

較佳地,所述第一氣體出氣通道為寬度小於第一氣體擴散槽槽寬度的縱長形的縫隙通道或直徑小於第一氣體擴散槽槽寬度的複數個孔通道;第二氣體出氣通道為寬度小於第二氣體擴散槽槽寬度的縱長形的縫隙通道或直徑小於第二氣體擴散槽槽寬度的複數個孔通道。Preferably, the first gas outlet passage is a longitudinal slit passage having a width smaller than a width of the first gas diffusion groove or a plurality of pore passages having a diameter smaller than a width of the first gas diffusion groove; the second gas outlet passage is A longitudinal slit passage having a width smaller than a width of the second gas diffusion groove or a plurality of pore passages having a diameter smaller than a width of the second gas diffusion groove.

較佳地,所述氣體輸送裝置至少包含邊緣區域及中心區域,位於所述邊緣區域內的第一及第二氣體出氣通道的截面豎直長度與位於所述中心區域內的第一及第二氣體出氣通道的截面豎直長度不相同或相同。Preferably, the gas delivery device comprises at least an edge region and a central region, a vertical length of a section of the first and second gas outlet channels located in the edge region, and first and second portions located in the central region The vertical lengths of the gas outlet passages are different or the same.

所述氣體輸送裝置至少包含邊緣區域及中心區域,所述邊緣區域及所述中心區域的第一氣體擴散槽的槽凹陷深度大於所述中心區域的第一氣體擴散槽的槽凹陷深度,所述第二氣體擴散槽的槽凹陷深度大於所述中心區域的第二氣體擴散槽的槽凹陷深度。The gas delivery device includes at least an edge region and a central region, wherein the edge region and the first gas diffusion groove of the central region have a groove depression depth greater than a groove depression depth of the first gas diffusion groove of the central region, The groove recess depth of the second gas diffusion groove is greater than the groove recess depth of the second gas diffusion groove of the center region.

本發明的目的之二在於提供一種化學氣相沉積或磊晶層成長反應器,所述反應器包含一反應氣體輸送裝置,所述反應氣體輸送裝置可以有效控制反應氣體進入處理區域的速率及均勻度,在進入處理區域前可保證兩組氣體的互相隔離,同時能減少反應氣體在反應氣體輸送裝置的下表面發生沉積反應,減少反應腔的污染概率。A second object of the present invention is to provide a chemical vapor deposition or epitaxial layer growth reactor, the reactor comprising a reactive gas delivery device, which can effectively control the rate and uniformity of reaction gases entering the treatment zone. The degree of separation between the two groups of gases can be ensured before entering the treatment zone, and at the same time, the deposition reaction of the reaction gas on the lower surface of the reaction gas delivery device can be reduced, and the pollution probability of the reaction chamber can be reduced.

本發明的目的之三在於提供一種製作氣體輸送裝置的方法,所述方法包含下列步驟:A third object of the present invention is to provide a method of fabricating a gas delivery device, the method comprising the steps of:

提供一具有一定厚度的板材用以製作氣體輸送板,該板材具有相對平行的上表面及下表面;Providing a plate having a certain thickness for forming a gas conveying plate, the plate having relatively parallel upper and lower surfaces;

在所述板材上表面沿某一水平方向開鑿製作相互平行且具有一定深度的縱長形的第一氣體擴散槽及縱長形的第二氣體擴散槽,所述第一氣體擴散槽及所述第二氣體擴散槽交替設置;在所述第一氣體擴散槽的槽底開鑿設置寬度小於第一氣體擴散槽槽寬度的縱長形的縫隙通道或直徑小於第一氣體擴散槽槽寬度的複數個孔通道,所述縫隙通道或所述孔通道構成第一氣體出氣通道,在所述第二氣體擴散槽的槽底開鑿設置寬度小於第二氣體擴散槽槽寬度的縱長形的縫隙通道或直徑小於第二氣體擴散槽槽寬度的複數個孔通道,所述縫隙通道或所述孔通道構成第二氣體出氣通道;所述各第一出氣通道及所述各第二氣體出氣通道之間的板材構成縱長形的氣體導流條;Forming a first gas diffusion groove and a longitudinally elongated second gas diffusion groove which are parallel to each other and have a certain depth in a horizontal direction on the upper surface of the plate, the first gas diffusion groove and the first gas diffusion groove a second gas diffusion groove is alternately disposed; a longitudinally-shaped slit channel having a width smaller than a width of the first gas diffusion groove and a plurality of diameters smaller than a width of the first gas diffusion groove are cut in a groove bottom of the first gas diffusion groove a hole passage, the slit passage or the hole passage constitutes a first gas outlet passage, and a slit passage or diameter having a width smaller than a width of the second gas diffusion groove groove is cut in a groove bottom of the second gas diffusion groove a plurality of hole channels smaller than a width of the second gas diffusion groove, the gap channel or the hole channel forming a second gas outlet passage; a plate between the first outlet passages and the second gas outlet passages Forming a longitudinal gas guiding strip;

在各氣體導流條內部開鑿設置縱長形的冷卻通道;設置氣體導流條的下表面為具有一定弧度的下表面或尖錐形下表面;Forming a longitudinally-shaped cooling passage inside each gas guiding strip; the lower surface of the gas guiding strip is provided with a lower surface having a certain curvature or a tapered lower surface;

在製作完成的氣體輸送板上表面緊密固定一密封板,將所述密封板上對應第二氣體擴散槽的區域挖空設置,在所述密封板上對應各第一氣體擴散槽的位置設置至少一輸送管插介面;a sealing plate is tightly fixed on the surface of the finished gas conveying plate, and a region corresponding to the second gas diffusion groove is hollowed out on the sealing plate, and at least the position of each first gas diffusion groove is set on the sealing plate. a duct insertion interface;

在所述氣體輸送板上方一定距離設置一隔離板,所述隔離板及所述氣體輸送板之間形成第二氣體擴散區域,在所述隔離板上對應各輸送管插介面的位置設置一小孔,每個小孔及其對應的輸送管插介面處插入一第一氣體輸送管,所述第一氣體輸送管與所述小孔及所述輸送管插介面連接處密封設置;以及A spacer is disposed at a distance above the gas transport plate, and a second gas diffusion region is formed between the partition plate and the gas transport plate, and a small position is set on the partition plate corresponding to each plug pipe interface Inserting a first gas delivery tube into the hole, each of the small holes and the corresponding delivery tube insertion surface, the first gas delivery tube being sealed with the small hole and the insertion surface of the delivery tube; and

在所述隔離板上方一定距離設置一頂板,所述頂板與所述隔離板之間形成第一氣體擴散區域。A top plate is disposed at a distance above the partition plate, and a first gas diffusion region is formed between the top plate and the partition plate.

較佳地,在製作氣體輸送板時,設置所述氣體輸送板靠近邊緣區域的第一氣體擴散槽及第二氣體擴散槽的槽深度大於靠近中心區域的第一氣體擴散槽及第二氣體擴散槽的槽深度。Preferably, when the gas conveying plate is formed, the groove depth of the first gas diffusion groove and the second gas diffusion groove disposed near the edge region of the gas conveying plate is greater than the first gas diffusion groove and the second gas diffusion near the central portion. The groove depth of the groove.

較佳地,製作氣體輸送板下表面時,設置所述縱長形氣體導流條的下表面為向下凸起的弧形表面或向上凹進的弧形表面。Preferably, when the lower surface of the gas conveying plate is formed, the lower surface of the elongated gas guiding strip is provided as a downwardly convex curved surface or an upwardly concave curved surface.

第1圖繪示根據本發明實施方式所提供的一種反應器的前視橫載面示意圖。所述反應器可以用於化學氣相沉積或磊晶層成長,但應當理解,其並不限於此類應用。FIG. 1 is a schematic view showing a front cross-sectional surface of a reactor according to an embodiment of the present invention. The reactor can be used for chemical vapor deposition or epitaxial layer growth, but it should be understood that it is not limited to such applications.

所述反應器10包含圍成反應腔的外壁11以及一頂壁12,反應器10內設置至少一個基板承載架15及用於支撐所述基板承載架15的支撐裝置16,在化學氣相沉積或磊晶層成長反應器中,支撐裝置16可以帶動基板承載架15旋轉,以實現沉積製程或磊晶層成長製程的順利進行。在基板承載架15上方,頂壁12下方設置一反應氣體輸送裝置100,反應氣體輸送裝置100用於將至少兩組不同的反應氣體分別輸送到反應器10內的處理區域內混合反應,並確保兩組不同的反應氣體在進入處理區域之前互相隔離。The reactor 10 includes an outer wall 11 enclosing a reaction chamber and a top wall 12. At least one substrate carrier 15 and a supporting device 16 for supporting the substrate carrier 15 are disposed in the reactor 10 for chemical vapor deposition. In the epitaxial layer growth reactor, the supporting device 16 can drive the substrate carrier 15 to rotate to achieve a smooth deposition process or an epitaxial layer growth process. Above the substrate carrier 15, a reactive gas delivery device 100 is disposed below the top wall 12, and the reactive gas delivery device 100 is configured to deliver at least two different sets of reaction gases to the mixing reaction in the processing zone within the reactor 10, and to ensure The two sets of different reactive gases are isolated from each other before entering the treatment zone.

第2圖、第3圖及第4圖繪示本發明一種實施例的反應氣體輸送裝置,其設置於如第1圖所示的用於化學氣相沉積或磊晶層成長的反應器10內,其中第2圖為本實施例反應氣體輸送裝置的前視橫截面示意圖,第3圖為本實施例的反應氣體輸送裝置後方抬起一定角度的前視橫截面示意圖,第4圖為反應氣體輸送裝置的仰視圖,反應氣體輸送裝置包含位於一主體部20。在第2圖及第3圖所示的反應氣體輸送裝置中可清晰地看出,該反應氣體輸送裝置100自上而下依次包含一頂板130、隔離板120及氣體輸送板110,其中,頂板130及隔離板120相互間隔而在二者之間形成第一氣體擴散區域128,隔離板120及氣體輸送板110相互間隔而在二者之間形成第二氣體擴散區域118。第一氣體擴散區域128與第1圖中的第一氣體源101相連接,用於提供第一反應氣體注入,第二氣體擴散區域118與第1圖中的第二氣體源102相連接,用於提供第二反應氣體注入。2, 3, and 4 illustrate a reaction gas delivery device according to an embodiment of the present invention, which is disposed in a reactor 10 for chemical vapor deposition or epitaxial growth as shown in FIG. 2 is a front cross-sectional schematic view of the reactive gas delivery device of the present embodiment, and FIG. 3 is a front cross-sectional schematic view showing the reaction gas delivery device of the present embodiment raised at a certain angle, and FIG. 4 is a reaction gas. In a bottom view of the delivery device, the reactive gas delivery device is located in a body portion 20. As can be clearly seen from the reaction gas delivery devices shown in FIGS. 2 and 3, the reaction gas delivery device 100 includes a top plate 130, a separator 120, and a gas delivery plate 110 from top to bottom, wherein the top plate The 130 and the separator 120 are spaced apart from each other to form a first gas diffusion region 128 therebetween, and the separator 120 and the gas transport plate 110 are spaced apart from each other to form a second gas diffusion region 118 therebetween. The first gas diffusion region 128 is connected to the first gas source 101 in FIG. 1 for providing a first reaction gas injection, and the second gas diffusion region 118 is connected to the second gas source 102 in FIG. A second reactive gas injection is provided.

氣體輸送板110為一體形成之板體結構,其包含一上表面110a及一下表面110b,上表面110a上沿某一水平方向(如沿圖式X軸方向)向下表面110b方向開鑿設有一定深度的相互平行排列的複數個縱長形第一氣體擴散槽111及複數個縱長形第二氣體擴散槽112,並且各第一氣體擴散槽111及各第二氣體擴散槽112相互平行且相互穿插間隔排列設置,其相互間隔的距離可以是某一預設距離,並且該間隔的距離可以視情況定為相同或不相同。各第一氣體擴散槽111下方還開設連接有一縱長形第一氣體出氣通道1111並且二者相連通,各第二氣體擴散槽112下方還開設連接有一縱長形第二氣體出氣通道1121並且二者相連通,分別用於將第一氣體及第二氣體輸送到處理區域內。相鄰的第一氣體出氣通道1111及第二氣體出氣通道1121之間設置有或形成有一個縱長形的氣體導流條50,各氣體導流條50的下表面為具有一定弧度的表面110b。沿著各氣體導流條50的縱長方向,在各氣體導流條50內設置一個或複數個縱長形的冷卻管道116,冷卻管道116至少包含一個冷卻液入口1161(第1圖所示)及一個冷卻液出口1162(第1圖所示),通過冷卻液的迴圈流動,控制氣體輸送板110的溫度,使得反應製程穩定均勻,同時可以避免第一反應氣體及第二反應氣體在氣體輸送板110的下表面110b上進行沉積反應,生成沉積污染物。The gas conveying plate 110 is an integrally formed plate body structure, and comprises an upper surface 110a and a lower surface 110b. The upper surface 110a is cut in a horizontal direction (such as in the X-axis direction of the drawing) to the lower surface 110b. a plurality of vertically elongated first gas diffusion grooves 111 and a plurality of longitudinally elongated second gas diffusion grooves 112 arranged in parallel with each other, and each of the first gas diffusion grooves 111 and each of the second gas diffusion grooves 112 are parallel to each other and mutually The interspersed arrangement is arranged such that the distance between them is a certain preset distance, and the distance of the interval may be the same or different as the case may be. A longitudinally-shaped first gas outlet passage 1111 is connected to each of the first gas diffusion grooves 111 and communicates with each other. A second elongated gas outlet passage 1121 is further connected to each of the second gas diffusion grooves 112. The persons are connected to each other for transporting the first gas and the second gas into the treatment area. An elongated gas guiding strip 50 is disposed or formed between the adjacent first gas outlet passage 1111 and the second gas outlet passage 1121. The lower surface of each gas guiding strip 50 is a surface 110b having a certain curvature. . One or a plurality of elongated cooling ducts 116 are disposed in each of the gas guiding strips 50 along the longitudinal direction of each of the gas guiding strips 50. The cooling duct 116 includes at least one coolant inlet 1161 (shown in FIG. 1). And a coolant outlet 1162 (shown in Figure 1), controlling the temperature of the gas delivery plate 110 by the circulation of the coolant, so that the reaction process is stable and uniform, and the first reaction gas and the second reaction gas can be avoided. A deposition reaction is performed on the lower surface 110b of the gas transfer plate 110 to generate deposition contaminants.

在本實施例中,為了保證氣體流動的均勻性,各個氣體導流條50的弧形下表面110b形狀相同,該弧形的下表面可以減少由於氣體流出出氣通道出口時在表面產生的沉積反應,進而避免對反應製程造成的顆粒污染。在某些實施例中,為了不同的需求,也可以將不同第一氣體出氣通道出口及第二氣體出氣通道出口之間的弧形下表面110b形狀設置為不相同,通過設置該下表面的不同形狀達到調節反應氣體出氣速率不同或氣體分佈不同的目的。由第4圖可知,縱長形的氣體導流條兩側分別為第一氣體出氣通道1111及第二氣體出氣通道1121,第一氣體出氣通道1111及第二氣體出氣通道1121平行交替設置,分別提供第一氣體及第二氣體至反應區域。In the present embodiment, in order to ensure the uniformity of the gas flow, the curved lower surface 110b of each of the gas guiding strips 50 has the same shape, and the curved lower surface can reduce the deposition reaction on the surface due to the outflow of the gas out of the outlet passage. In order to avoid particle contamination caused by the reaction process. In some embodiments, the shape of the curved lower surface 110b between the different first gas outlet passage outlets and the second gas outlet passage outlets may be set to be different for different needs, by setting the difference of the lower surfaces. The shape is adjusted to adjust the reaction gas output rate or the gas distribution is different. It can be seen from Fig. 4 that the first gas outlet channel 1111 and the second gas outlet channel 1121 are respectively disposed on two sides of the longitudinal gas guiding strip, and the first gas outlet channel 1111 and the second gas outlet channel 1121 are alternately arranged in parallel, respectively A first gas and a second gas are supplied to the reaction zone.

作為一種優選實施例,圖式中的第一氣體出氣通道1111為寬度小於第一氣體擴散槽111的槽寬度的縫隙形通道,第二氣體出氣通道1121為寬度小於第二氣體擴散槽112槽寬度的縫隙形通道,在另外的實施例中,兩個氣體出氣通道還可以為別的結構,具體將在後面的實施例中介紹。As a preferred embodiment, the first gas outlet passage 1111 in the drawing is a slit-shaped passage having a width smaller than the groove width of the first gas diffusion groove 111, and the second gas outlet passage 1121 has a width smaller than the groove width of the second gas diffusion groove 112. The slit-shaped passages, in other embodiments, the two gas outlet passages may be of other constructions, as will be described in the following examples.

隔離板120上設置複數個小孔125以允許第一氣體輸送管121通過,第一氣體輸送管121穿過隔離板120將第一氣體輸送到第一氣體擴散槽111內,每個第一氣體擴散槽111至少對應一個第一氣體輸送管121,為了使得氣體擴散通道111內的第一氣體擴散快速均勻,可以在各條第一氣體擴散槽111上均勻設置複數個第一氣體輸送管121。由於第一氣體及第二氣體在進入處理區域內時需要保證相互隔離,因此第一氣體輸送管121將第一氣體輸送到第一氣體擴散槽111內的過程中要保證不與第二氣體混合,為此,在氣體輸送板110表面固定連接一層密封板113,密封板113上對應第二氣體擴散槽112的位置挖空,使第二氣體擴散槽112與第二氣體擴散區域118相連通,密封板113僅將第一氣體擴散槽111完全覆蓋。優選地,為了保證覆蓋的密封性,密封板113與第一氣體擴散槽111兩側的上表面110a設置密封墊1135。密封板113對應第一氣體輸送管121的位置設置允許第一氣體注入的輸送管插介面115,在本實施例中該輸送管插介面115可以允許第一氣體輸送管121穿過,在另外的實施例中,氣體輸送管121不穿過輸送管插介面115,其末端抵靠在密封板113上表面,僅將第一氣體注入第一氣體擴散槽內,上述兩種實施例均通過將第一氣體輸送管121與密封板113的輸送管插介面115的接觸面進行密封實現第一氣體與第二氣體的隔離,如果第一氣體輸送管121及密封板113均為金屬材質,可以通過焊接的方式進行密封;如果是非金屬材質也可以採用密封圈的方式進行密封。如果每個第一氣體擴散槽111對應複數個第一氣體輸送管121,密封板113上需要設置對應個數的輸送管插介面115,每個第一氣體輸送管121與輸送管插介面115的接觸面都需要進行密封處理。A plurality of small holes 125 are disposed on the separation plate 120 to allow the first gas delivery pipe 121 to pass, and the first gas delivery pipe 121 passes the first gas through the separation plate 120 to the first gas diffusion groove 111, each of the first gas The diffusion groove 111 corresponds to at least one first gas delivery pipe 121. In order to make the first gas diffusion in the gas diffusion channel 111 fast and uniform, a plurality of first gas delivery pipes 121 may be uniformly disposed on each of the first gas diffusion grooves 111. Since the first gas and the second gas need to be separated from each other when entering the processing region, the first gas delivery pipe 121 must ensure that the first gas is not mixed with the second gas during the process of conveying the first gas into the first gas diffusion groove 111. To this end, a sealing plate 113 is fixedly connected to the surface of the gas conveying plate 110, and the position of the sealing plate 113 corresponding to the second gas diffusion groove 112 is hollowed out, so that the second gas diffusion groove 112 communicates with the second gas diffusion region 118. The sealing plate 113 completely covers only the first gas diffusion groove 111. Preferably, in order to ensure the tightness of the covering, the sealing plate 113 and the upper surface 110a on both sides of the first gas diffusion groove 111 are provided with a gasket 1135. The sealing plate 113 is disposed at a position corresponding to the first gas delivery pipe 121 to allow the first gas to be injected into the delivery tube interposer 115. In the present embodiment, the delivery tube interposer 115 may allow the first gas delivery tube 121 to pass through, in addition In the embodiment, the gas delivery tube 121 does not pass through the insertion surface 115 of the delivery tube, and the end thereof abuts against the upper surface of the sealing plate 113, and only the first gas is injected into the first gas diffusion groove. A gas delivery tube 121 is sealed with a contact surface of the delivery tube interposer 115 of the sealing plate 113 to isolate the first gas from the second gas. If the first gas delivery tube 121 and the sealing plate 113 are made of metal, they can be welded. The method is sealed; if it is a non-metallic material, it can be sealed by means of a sealing ring. If each of the first gas diffusion grooves 111 corresponds to the plurality of first gas delivery tubes 121, a corresponding number of the delivery tube insertion surfaces 115 are required on the sealing plate 113, and each of the first gas delivery tubes 121 and the delivery tube insertion surface 115 The contact surfaces need to be sealed.

將本實施例的反應氣體輸送裝置100置於第1圖所示的反應器內,作為不同種實施方式,可以直接採用反應腔頂壁12作為頂板與隔離板120形成第一氣體擴散區域,也可以將第2-4圖所示實施例描述的反應氣體輸送裝置整體放置在頂壁12下方,第一氣體源101中的第一氣體注入第一氣體擴散區域128內,第二氣體源102中的第二氣體注入第二氣體擴散區域118內,第一氣體通過第一氣體輸送管121進入第一氣體擴散槽111再經第一氣體出氣通道1111 進入基板承載架15上方的處理區域,第二氣體通過第二氣體擴散槽112經第二氣體出氣通道1121進入基板承載架15上方的處理區域。兩種氣體在處理區域內實現對基板承載架15上方的基板進行製程處理。The reaction gas delivery device 100 of the present embodiment is placed in the reactor shown in FIG. 1. As a different embodiment, the reaction chamber top wall 12 can be directly used as the top plate and the separator 120 to form the first gas diffusion region. The reaction gas delivery device described in the embodiment shown in FIGS. 2-4 may be entirely placed under the top wall 12, and the first gas in the first gas source 101 is injected into the first gas diffusion region 128, and the second gas source 102 is The second gas is injected into the second gas diffusion region 118, and the first gas enters the first gas diffusion channel 111 through the first gas delivery tube 121 and enters the processing region above the substrate carrier 15 through the first gas outlet channel 1111. The gas enters the processing region above the substrate carrier 15 through the second gas diffusion channel 1121 through the second gas diffusion channel 112. The two gases are processed in the processing area to process the substrate above the substrate carrier 15.

前述實施方式中,通過設置密封板113實現第一氣體與第二氣體的隔離。應當理解,其不限於此種設計。例如,在反應氣體輸送裝置的上表面上開設第一氣體擴散槽111時,直接從上表面的下方一距離開鑿出第一氣體擴散槽111,這樣使第一氣體擴散槽111的上方不露空,而是設置於上表面的下方,該設計不再需要額外設置密封板113。In the foregoing embodiment, the isolation of the first gas from the second gas is achieved by providing the sealing plate 113. It should be understood that it is not limited to this design. For example, when the first gas diffusion groove 111 is opened on the upper surface of the reaction gas delivery device, the first gas diffusion groove 111 is directly drilled from a distance below the upper surface, so that the upper portion of the first gas diffusion groove 111 is not exposed. Instead of being disposed below the upper surface, the design no longer requires the additional provision of the sealing plate 113.

本發明所提供的反應氣體輸送裝置,其製作方法簡單,每個尺寸可精確控制,製作步驟是:The reaction gas conveying device provided by the invention has a simple manufacturing method, and each size can be precisely controlled, and the manufacturing steps are:

先提供一具有一定厚度的一體成形之板材110,用以製作氣體輸送板,該板材具有相對平行的上表面110a及下表面110b;作為一種示例,板材製作成大體呈圓柱形。An integrally formed panel 110 having a thickness is first provided for forming a gas delivery panel having relatively parallel upper and lower surfaces 110a, 110b; as an example, the sheet is formed into a generally cylindrical shape.

在所述板材的上表面沿某一水平方向(如X軸的正負方向)交替平行開鑿挖出具有一定深度的縱長形的第一氣體擴散槽111及縱長形的第二氣體擴散槽112,在第一氣體擴散槽111的槽底開設寬度小於第一氣體擴散槽槽寬度的縱長形的縫隙通道或直徑小於第一氣體擴散槽槽寬度的複數個孔通道,縫隙通道或孔通道構成第一氣體出氣通道1111,在第二氣體擴散槽112的槽底開設寬度小於第二氣體擴散槽槽寬度的縱長形的縫隙通道或直徑小於第二氣體擴散槽槽寬度的複數個孔通道,縫隙通道或複數個孔通道構成第二氣體出氣通道1121;各第一出氣通道及各第二氣體出氣通道之間的板材成為縱長形的氣體導流條50;A vertically elongated first gas diffusion groove 111 having a certain depth and a vertically elongated second gas diffusion groove 112 are alternately drilled in parallel in a horizontal direction (such as the positive and negative directions of the X-axis) of the upper surface of the plate material. a slit passage having a width smaller than a width of the first gas diffusion groove or a plurality of hole passages having a diameter smaller than a width of the first gas diffusion groove is formed in the groove bottom of the first gas diffusion groove 111, and the slit channel or the hole channel is formed a first gas outlet passage 1111, a slit passage having a width smaller than a width of the second gas diffusion groove or a plurality of pore passages having a diameter smaller than a width of the second gas diffusion groove at a groove bottom of the second gas diffusion groove 112, The slit channel or the plurality of holes passages constitute a second gas outlet passage 1121; the plate between each of the first outlet passages and each of the second gas outlet passages becomes a longitudinal gas guide strip 50;

在各氣體導流條50內部開鑿冷卻通道116;設置氣體導流條的下表面為具有一定弧度的下表面或尖錐形下表面;a cooling passage 116 is bored in each of the gas guiding strips 50; a lower surface of the gas guiding strip is provided with a lower surface having a certain curvature or a tapered lower surface;

在製作完成的氣體輸送板上表面緊密固定一密封板113,將密封板上對應第二氣體擴散槽112的區域挖空設置,在密封板上對應各第一氣體擴散槽的位置設置至少一輸送管插介面115;A sealing plate 113 is tightly fixed on the surface of the finished gas conveying plate, and a region corresponding to the second gas diffusion groove 112 on the sealing plate is hollowed out, and at least one conveying is arranged on the sealing plate corresponding to the position of each of the first gas diffusion grooves. Pipe insertion interface 115;

在氣體輸送板110上方一定距離設置一隔離板120,隔離板120及氣體輸送板110之間形成第二氣體擴散區域118,在所述隔離板上對應各輸送管插介面115的位置設置一小孔125,每個小孔125及其對應的輸送管插介面115處設置一第一氣體輸送管121,第一氣體輸送管121與小孔125及輸送管插介面115連接處密封設置;A partitioning plate 120 is disposed at a distance above the gas conveying plate 110, and a second gas diffusion region 118 is formed between the partitioning plate 120 and the gas conveying plate 110, and a small position is set on the separating plate corresponding to each of the conveying pipe interposing surfaces 115. a first gas delivery tube 121 is disposed at each of the apertures 125 and each of the corresponding apertures 125, and the first gas delivery tube 121 is sealed with the apertures 125 and the interface of the delivery tube interface 115;

在所述隔離板上方一定距離設置一頂板130,頂板130與隔離板120之間形成第一氣體擴散區域128。A top plate 130 is disposed at a distance above the partition plate, and a first gas diffusion region 128 is formed between the top plate 130 and the partition plate 120.

本發明所提供的反應氣體輸送裝置,其加工製作簡單,在機械加工時,各個槽及通道的大小可以精確控制,從而保證加工後的各個反應氣體輸送裝置的形狀、大小、尺寸同一,保證了加工製作的良率;相同的反應氣體輸送裝置置於不同的反應器內可實現與不同反應器的匹配一致,在複數個反應器加工一批基板時能保證反應腔與反應腔之間的加工製程的均一性,提高反應器的產品合格率。同時,由於氣體擴散槽、氣體出氣通道、氣體導流塊、冷卻管道均設置在一塊板材上,大大地減少了漏氣、漏水的可能,保證了反應氣體輸送裝置的使用可靠性。The reaction gas conveying device provided by the invention has simple processing and manufacturing, and the size of each groove and channel can be precisely controlled during machining, thereby ensuring the same shape, size and size of each reaction gas conveying device after processing, thereby ensuring the same. Yield of processing; the same reaction gas delivery device is placed in different reactors to achieve matching with different reactors, and processing between the reaction chamber and the reaction chamber can be ensured when processing a batch of substrates in a plurality of reactors The uniformity of the process improves the product qualification rate of the reactor. At the same time, since the gas diffusion tank, the gas outlet passage, the gas guiding block and the cooling duct are all disposed on one plate, the possibility of gas leakage and water leakage is greatly reduced, and the reliability of the use of the reaction gas conveying device is ensured.

本發明的反應氣體輸送裝置盡可能減少採用管道設計,減少了管道與密封板及隔離板處的密封數量,提高了兩種氣體進入處理區域前的相互隔離效果,通過採用一定厚度的氣體輸送板110並在氣體輸送板上製作上表面開口的氣體擴散槽,降低了製作難度,提高了氣體輸送的效率,由於第一氣體輸送管的數量有限,對第二氣體擴散區域的氣體流動阻力幾乎可忽略不計,第二氣體可以迅速在第二氣體擴散區域擴散均勻,並通過第二氣體擴散槽及第二氣體出氣通道進入處理區域。通過設置氣體輸送板的下表面110b為弧形,同時設置冷卻通道116靠近下表面110b,減少了兩種反應氣體剛出氣體出氣通道就進行反應並將反應物沉積在下表面上帶來的污染問題。The reaction gas conveying device of the invention minimizes the use of the pipeline design, reduces the number of seals at the pipeline and the sealing plate and the insulation plate, and improves the mutual isolation effect of the two gases before entering the treatment area, by adopting a gas conveying plate of a certain thickness. 110 and making a gas diffusion groove with an open upper surface on the gas conveying plate, the manufacturing difficulty is reduced, and the efficiency of gas transportation is improved. Since the number of the first gas delivery pipe is limited, the gas flow resistance to the second gas diffusion region is almost Neglected, the second gas can rapidly diffuse uniformly in the second gas diffusion region and enter the processing region through the second gas diffusion channel and the second gas outlet channel. By providing the lower surface 110b of the gas conveying plate to be curved, and simultaneously providing the cooling passage 116 close to the lower surface 110b, the pollution problem caused by the reaction of the two reaction gases just after exiting the gas outlet passage and depositing the reactant on the lower surface is reduced. .

第5圖繪示另一種實施例的反應氣體輸送裝置後方抬起一定角度的前視橫截面示意圖。本實施例的反應氣體輸送裝置與上述實施例的結構大致相同,故相同的部件採用了相同的元件符號,區別在於,本實施例中第一氣體出氣通道1112為直徑小於第一氣體擴散槽槽寬度的複數個孔通道,形成一條縱長形的孔通道;第二氣體出氣通道1122為直徑小於第二氣體擴散槽槽寬度的複數個孔通道,形成一條縱長形的孔通道。該種設計可以有效的實現對氣體出氣速率進行控制,同時,孔通道的出氣口出產生渦流的現象較弱,因此反應氣體不會在氣體輸送板的下表面進行沉積。FIG. 5 is a schematic front cross-sectional view showing the reaction gas delivery device of another embodiment raised at an angle. The reaction gas delivery device of the present embodiment is substantially the same as the structure of the above embodiment, so the same components are denoted by the same component symbols, except that the first gas outlet passage 1112 is smaller in diameter than the first gas diffusion groove in the embodiment. The plurality of aperture channels of the width form a longitudinally shaped aperture channel; the second gas outlet channel 1122 is a plurality of aperture channels having a diameter smaller than the width of the second gas diffusion slot, forming a longitudinally elongated aperture channel. The design can effectively control the gas outgassing rate, and at the same time, the phenomenon that the venting of the orifice passage produces a vortex is weak, so the reaction gas is not deposited on the lower surface of the gas conveying plate.

第6圖及第7圖繪示本發明的另一種實施例結構,其中第6圖為本實施例反應氣體輸送裝置的前視橫截面示意圖,第7圖為本實施例的反應氣體輸送裝置後方抬起一定角度的前視橫截面示意圖,本實施例的反應氣體輸送裝置與上述實施例的結構大致相同,故相同的部件採用了相同的元件符號,其區別在於:各縱長形的氣體導流條50兩側分別連接一縱長形的子氣體導流條,氣體導流條50與子氣體導流條相互平行並相互間隔一距離設置,二者之間形成一子氣體通道,具體的,第一氣體擴散槽兩側的氣體導流條50連接的縱長形的子氣體導流條分別為51a及51b,子氣體導流條51a與氣體導流條50之間形成子氣體通道1113a,子氣體導流條51b與氣體導流條50之間形成子氣體通道1113b,第二氣體擴散槽112兩側的氣體導流條50連接的縱長形的子氣體導流條分別為52a及52b,子氣體導流條52a與氣體導流條50之間形成子氣體通道1123a,子氣體導流條52b與氣體導流條50之間形成子氣體通道1123b。子氣體通道1113a及1113b與所述第一氣體出氣通道在豎直的截面方向上呈一銳角,子氣體通道1123a及1123b與所述第二氣體出氣通道在豎直的截面方向上呈一銳角。可以設置子氣體導流條及氣體導流條之間有連接處,以保證氣體輸送板的整體設計。在氣體導流條50兩側設置子氣體導流條,可以增加氣體擴散的出口,提高氣體自氣體擴散槽向處理區域擴散速率,在需要同樣氣體流出速率的時候可以降低氣體輸送板110上表面的氣體擴散槽的密度,降低製作成本。第一氣體及第二氣體經子氣體通道1113b及子氣體通道1123a流出後互相對沖,兩種氣體快速到達基板表面進行反應,實現對基板的加工處理。6 and 7 are views showing the structure of another embodiment of the present invention, wherein FIG. 6 is a front cross-sectional view of the reaction gas delivery device of the present embodiment, and FIG. 7 is the rear of the reaction gas delivery device of the present embodiment. The front view of the cross-sectional view of the embodiment is substantially the same as that of the above embodiment, so the same components are given the same component symbols, and the difference is: each longitudinal gas guide The two sides of the flow bar 50 are respectively connected with a longitudinal sub-gas guide bar. The gas guide bar 50 and the sub-gas guide bar are parallel to each other and spaced apart from each other, and a sub-gas passage is formed therebetween. The longitudinal gas-shaped gas guiding strips connected to the gas guiding strips 50 on both sides of the first gas diffusion groove are respectively 51a and 51b, and the sub-gas guiding strips 51a and the gas guiding strips 50 form a sub-gas passage 1113a. a sub-gas passage 1113b is formed between the sub-gas guide strip 51b and the gas guide strip 50, and the longitudinal sub-gas guide strips connected to the gas guide strip 50 on both sides of the second gas diffusion groove 112 are respectively 52a and 52b, sub-gas guide 1123a, 1123b is formed between the gas passage 50 the sub-sub-gas guide strip 52b is formed with gas guide bar 50 between the sub-gas passage 52a and the gas guide bar. The sub-gas passages 1113a and 1113b and the first gas outlet passage have an acute angle in a vertical cross-sectional direction, and the sub-gas passages 1123a and 1123b and the second gas outlet passage have an acute angle in a vertical cross-sectional direction. A connection between the sub-gas guiding strip and the gas guiding strip can be set to ensure the overall design of the gas conveying plate. The gas gas guiding strips are disposed on both sides of the gas guiding strip 50, which can increase the gas diffusion outlet, increase the diffusion rate of the gas from the gas diffusion groove to the processing region, and reduce the upper surface of the gas conveying plate 110 when the same gas outflow rate is required. The density of the gas diffusion groove reduces the manufacturing cost. The first gas and the second gas flow out through the sub-gas passage 1113b and the sub-gas passage 1123a, and the two gases collide with each other to quickly react on the surface of the substrate to realize processing of the substrate.

第8圖及第9圖繪示本發明的另一種實施例結構,其中第8圖為本實施例反應氣體輸送裝置的前視橫截面示意圖,第9圖為本實施例的反應氣體輸送裝置後方抬起一定角度的前視橫截面示意圖,本實施例的反應氣體輸送裝置與上述實施例的結構大致相同,故相同的部件採用了相同的元件符號,其區別在於:本實施例中第一氣體出氣通道1111及第二氣體出氣通道1121之間的氣體輸送板下表面110b’為向處理區域方向凹陷的弧形面,該種設計使得氣體輸送板的下表面110b’與冷卻通道116之間的距離更為接近,同時,凹陷的弧形表面距離兩種反應氣體的接觸區域較遠,可以減少兩種氣體在下表面110b’處的沉積物,降低對反應腔的污染概率。8 and 9 are views showing the structure of another embodiment of the present invention, wherein FIG. 8 is a front cross-sectional view of the reaction gas delivery device of the present embodiment, and FIG. 9 is the rear of the reaction gas delivery device of the present embodiment. The front view of the cross-sectional view of the embodiment is substantially the same as that of the above embodiment, so the same components are given the same component symbols, and the difference is: the first gas in this embodiment The gas conveying plate lower surface 110b' between the outlet passage 1111 and the second gas outlet passage 1121 is an arcuate surface recessed toward the treatment region, which is designed such that the lower surface 110b' of the gas conveying plate and the cooling passage 116 are The distance is closer. At the same time, the curved surface of the depression is far from the contact area of the two reaction gases, which can reduce the deposit of the two gases on the lower surface 110b' and reduce the probability of contamination to the reaction chamber.

第10圖繪示第9圖所述實施例的變形實施例,其中,第一氣體出氣通道1111及第二氣體出氣通道1121靠近反應區域的一端兩側與下表面110b’連接處為一弧形表面55。該實施例中反應氣體自第一氣體出氣通道1111及第二氣體出氣通道1121流出後在凹陷的弧形下表面110b’下方區域30進行預反應,再沉積在基板表面,提高反應速率。FIG. 10 is a view showing a modified embodiment of the embodiment shown in FIG. 9 , wherein the first gas outlet passage 1111 and the second gas outlet passage 1121 are adjacent to the reaction region and are connected to the lower surface 110 b ′ in an arc shape. Surface 55. In this embodiment, the reaction gas flows out from the first gas outlet passage 1111 and the second gas outlet passage 1121, and is pre-reacted in the region 30 below the concave curved lower surface 110b', and is deposited on the surface of the substrate to increase the reaction rate.

第11圖繪示本發明的另一種實施例結構,在本實施例中,反應氣體輸送裝置與上述實施例的結構大致相同,故相同的部件採用了相同的元件符號,其區別在於:本實施例中氣體導流條的下表面110b”為向處理區域方向凸起的尖錐形,採用該種設計使得第一氣體出氣通道及第二氣體出氣通道在靠近處理區域處開口逐漸變大,可有效減少反應氣體在兩氣體出氣通道出口處發生的渦流效應,降低兩種反應氣體在氣體導流條下表面110b”處發生沉積反應的概率,避免反應腔內反生沉積顆粒污染。11 is a view showing the structure of another embodiment of the present invention. In the present embodiment, the reaction gas delivery device is substantially the same as the structure of the above embodiment, so the same components are given the same component symbols, and the difference is: the implementation In the example, the lower surface 110b" of the gas guiding strip is a pointed cone protruding toward the processing region. With this design, the opening of the first gas outlet passage and the second gas outlet passage is gradually increased near the processing region. The eddy current effect of the reaction gas at the outlet of the two gas outlet passages is effectively reduced, the probability of deposition reaction of the two reaction gases at the lower surface 110b of the gas guide strip is reduced, and the pollution of the counter-deposited sediment particles in the reaction chamber is avoided.

第12圖及第13圖繪示本發明的另一種實施例結構,在本實施例中,反應氣體輸送裝置至少包含中心區域及邊緣區域等多區設置,氣體輸送板110邊緣區域的第一氣體擴散槽111’及第二氣體擴散槽112’的槽的凹陷深度與中心區域的第一氣體擴散槽111’及第二氣體擴散槽112’的槽的深度可以設置為相同或不相同同,位於邊緣區域內的第一氣體出氣通道及第二氣體出氣通道的截面豎直長度與位於中心區域內的第一及第二氣體出氣通道的截面豎直長度相同或不相同。例如,如第12圖所示,其中中心區域及邊緣區域的氣體擴散槽深度不同,在本實施例中可以設置邊緣區域的第一氣體擴散槽111’及第二氣體擴散槽112’深度大於中心區域的第一氣體擴散槽111及第二氣體擴散槽112,此種設計可以按照調節反應氣體進入反應區域的速度,通過增加邊緣區域的氣體擴散槽的深度,降低邊緣區域的氣體出氣通道的深度,加快反應氣體進入反應區域的速度,本發明的該種設計並不局限於本實施例所述的邊緣區域氣體擴散槽的深度大於中心區域氣體擴散槽的深度,作為一種可以調節氣體出氣速率的方式,可以根據實際需要確定中心區域及邊緣區域的大小,以及氣體擴散槽的深度差。12 and 13 illustrate the structure of another embodiment of the present invention. In the embodiment, the reactive gas delivery device includes at least a plurality of regions including a central region and an edge region, and the first gas in the edge region of the gas conveying plate 110. The depth of the groove of the diffusion groove 111' and the second gas diffusion groove 112' may be set to be the same or different from the depth of the groove of the first gas diffusion groove 111' and the second gas diffusion groove 112' in the central region. The vertical length of the cross section of the first gas outlet passage and the second gas outlet passage in the edge region is the same as or different from the vertical length of the first and second gas outlet passages located in the central region. For example, as shown in FIG. 12, in which the depths of the gas diffusion grooves of the central region and the edge regions are different, in the present embodiment, the first gas diffusion grooves 111' and the second gas diffusion grooves 112' of the edge regions may be disposed to have a depth greater than the center. The first gas diffusion groove 111 and the second gas diffusion groove 112 in the region are designed to reduce the depth of the gas outlet passage in the edge region by increasing the depth of the gas diffusion groove in the edge region according to the speed at which the reaction gas enters the reaction region. The speed of the reaction gas entering the reaction zone is accelerated. The design of the present invention is not limited to the depth of the gas diffusion groove in the edge region described in the embodiment, which is greater than the depth of the gas diffusion groove in the central region, and can be used as a gas outlet rate. In this way, the size of the central area and the edge area and the depth difference of the gas diffusion groove can be determined according to actual needs.

本發明雖然以較佳實施方式公開如上,但其並不是用來限定本發明,任何本領域具有通常知識者在不脫離本發明的精神及範圍內,都可以做出可能的變動及修改,因此本發明的保護範圍應當以本發明申請專利範圍所界定的範圍為準。The present invention has been disclosed in the above preferred embodiments, but it is not intended to limit the invention, and it is possible to make possible variations and modifications without departing from the spirit and scope of the invention. The scope of the invention should be determined by the scope defined by the scope of the invention.

10‧‧‧反應器
100‧‧‧反應氣體輸送裝置
101‧‧‧第一氣體源
102‧‧‧第二氣體源
11‧‧‧外壁
110‧‧‧氣體輸送板
110a‧‧‧上表面
110b、110b’、110b”‧‧‧下表面
111、111’‧‧‧第一氣體擴散槽
1111、1112、1113‧‧‧第一氣體出氣通道
1113a、1113b、1123a、1123b‧‧‧子氣體通道
112、112’‧‧‧第二氣體擴散槽
1121、1122、1123‧‧‧第二氣體出氣通道
113‧‧‧密封板
1135‧‧‧密封墊
115‧‧‧輸送管插介面
116‧‧‧冷卻管道
1161、1162‧‧‧冷卻液入口
118‧‧‧第二氣體擴散區域
12‧‧‧頂壁
120‧‧‧隔離板
121‧‧‧第一氣體輸送管
125‧‧‧小孔
128‧‧‧第一氣體擴散區域
130‧‧‧頂板
15‧‧‧基片承載架
16‧‧‧支撐裝置
30‧‧‧下方區域
50‧‧‧氣體導流條
51a、51b、52a、52b‧‧‧子氣體導流條
55‧‧‧弧形表面
x、y‧‧‧軸
10‧‧‧Reactor
100‧‧‧Reactive gas delivery device
101‧‧‧First gas source
102‧‧‧second gas source
11‧‧‧ outer wall
110‧‧‧ gas conveying board
110a‧‧‧ upper surface
110b, 110b', 110b" ‧ ‧ lower surface
111, 111'‧‧‧First gas diffusion tank
1111, 1112, 1113‧‧‧ first gas outlet passage
1113a, 1113b, 1123a, 1123b‧‧‧ sub-gas channels
112, 112'‧‧‧Second gas diffusion tank
1121, 1122, 1123‧‧‧ second gas outlet passage
113‧‧‧ Sealing plate
1135‧‧‧ Seal
115‧‧‧Transport insertion interface
116‧‧‧Cooling pipe
1161, 1162‧‧‧ coolant inlet
118‧‧‧Second gas diffusion zone
12‧‧‧ top wall
120‧‧‧Isolation board
121‧‧‧First gas delivery tube
125‧‧‧ hole
128‧‧‧First gas diffusion zone
130‧‧‧ top board
15‧‧‧Substrate carrier
16‧‧‧Support device
30‧‧‧Under the area
50‧‧‧ gas guide strip
51a, 51b, 52a, 52b‧‧‧ gas gas guides
55‧‧‧ curved surface
x, y‧‧‧ axis

通過閱讀參照以下附圖對非限制性實施方式所作的詳細描述,本發明的其他特徵、目的及優點將會變得更明顯:Other features, objects, and advantages of the present invention will become apparent from the Detailed Description of Description

第1圖繪示本發明所提供的一種反應器的前視橫載面示意圖;1 is a schematic view showing a front cross-sectional surface of a reactor provided by the present invention;

第2圖繪示一種實施例反應氣體輸送裝置的前視橫截面示意圖;2 is a front cross-sectional view showing a reaction gas delivery device of an embodiment;

第3圖繪示第2圖所示實施例的反應氣體輸送裝置後方抬起一定角度的前視橫截面示意圖;FIG. 3 is a schematic front cross-sectional view showing the reaction gas delivery device of the embodiment shown in FIG. 2 raised at a certain angle; FIG.

第4圖繪示第2圖所述實施例的仰視圖;Figure 4 is a bottom plan view showing the embodiment of Figure 2;

第5圖繪示一種實施例的反應氣體輸送裝置後方抬起一定角度的前視橫截面示意圖;FIG. 5 is a schematic front cross-sectional view showing a state in which a reaction gas delivery device of the embodiment is lifted at a certain angle;

第6圖繪示一種實施例反應氣體輸送裝置的前視橫截面示意圖;6 is a front cross-sectional view showing a reaction gas delivery device of an embodiment;

第7圖繪示第6圖所示實施例的反應氣體輸送裝置後方抬起一定角度的前視橫截面示意圖;Figure 7 is a front cross-sectional view showing the reaction gas delivery device of the embodiment shown in Figure 6 raised at a certain angle;

第8圖繪示一種實施例反應氣體輸送裝置的前視橫截面示意圖;8 is a front cross-sectional view showing a reaction gas delivery device of an embodiment;

第9圖繪示第8圖所示實施例的反應氣體輸送裝置後方抬起一定角度的前視橫截面示意圖;Figure 9 is a front cross-sectional view showing the rear side of the reaction gas delivery device of the embodiment shown in Figure 8 raised at a certain angle;

第10圖繪示第9圖所述實施例的變形實施例;Figure 10 is a view showing a modified embodiment of the embodiment shown in Figure 9;

第11圖繪示一種實施例的反應氣體輸送裝置後方抬起一定角度的前視橫截面示意圖;11 is a front cross-sectional view showing a state in which a reaction gas delivery device of the embodiment is lifted at a certain angle;

第12圖繪示一種實施例的反應氣體輸送裝置後方抬起一定角度的前視橫截面示意圖;以及Figure 12 is a front cross-sectional schematic view showing the reaction gas delivery device of the embodiment raised at an angle; and

第13圖繪示第11圖所述實施例的示意圖。Figure 13 is a schematic view showing the embodiment of Figure 11.

1111‧‧‧第一氣體出氣通道 1111‧‧‧First gas outlet channel

1121‧‧‧第二氣體出氣通道 1121‧‧‧Second gas outlet passage

20‧‧‧主體部 20‧‧‧ Main body

50‧‧‧氣體導流條 50‧‧‧ gas guide strip

Claims (18)

一種反應氣體輸送裝置,用於化學氣相沉積或磊晶層成長反應器,其包含: 從上往下依次設置的一頂板、一隔離板及一氣體輸送板,該頂板與該隔離板相互間隔而在二者之間形成一第一氣體擴散區域,該隔離板及該氣體輸送板相互間隔而在二者之間形成一第二氣體擴散區域; 該氣體輸送板為一體成形之一板體,其包含一上表面,該上表面上沿某一水平方向上開設有相互平行排列的複數個縱長形第一氣體擴散槽及複數個縱長形第二氣體擴散槽,並且每一該縱長形第一氣體擴散槽及每一該縱長形第二氣體擴散槽相互間隔排列設置,每一該縱長形第一氣體擴散槽下方還開設連接有一縱長形第一氣體出氣通道並且二者相連通,每一該縱長形第二氣體擴散槽下方還開設連接有一縱長形第二氣體出氣通道並且二者相連通;每一該第一氣體擴散槽及與之相鄰的每一該縱長形第二氣體擴散槽之間向下延伸設置有一縱長形的氣體導流條;每一該縱長形的氣體導流條內部設置有一縱長形的冷卻管道,每一該縱長形的氣體導流條的下表面設有具一定弧度的弧形或設為尖錐形;以及 每一該縱長形第一氣體擴散槽上還進一步連接設置有與該第一氣體擴散區域相連通的至少一第一氣體輸送管。A reaction gas delivery device for a chemical vapor deposition or epitaxial layer growth reactor, comprising: a top plate, a separator plate and a gas transport plate arranged in order from the top to the bottom, the top plate and the partition plate are spaced apart from each other Forming a first gas diffusion region therebetween, the spacer and the gas transport plate are spaced apart from each other to form a second gas diffusion region therebetween; the gas transport plate is a plate body integrally formed. The upper surface includes a plurality of longitudinally-shaped first gas diffusion grooves and a plurality of longitudinally-shaped second gas diffusion grooves arranged in parallel with each other in a horizontal direction, and each of the longitudinal lengths a first gas diffusion groove and each of the longitudinal second gas diffusion grooves are arranged at intervals, and each of the longitudinal first gas diffusion grooves is further connected with a longitudinal first gas outlet passage and Connected to each of the elongated second gas diffusion grooves and connected with a longitudinally elongated second gas outlet passage and connected to each other; each of the first gas diffusion grooves and adjacent thereto An elongated gas guiding strip extends downwardly between the elongated second gas diffusion grooves; each of the elongated gas guiding strips is internally provided with an elongated cooling pipe, each of which The lower surface of the longitudinal gas guiding strip is provided with a curved arc or a pointed cone; and each of the longitudinal first gas diffusion grooves is further connected with the first gas diffusion At least one first gas delivery tube in communication with the region. 如申請專利範圍第1項所述的反應氣體輸送裝置,其中每一該縱長形第一氣體出氣通道與每一該縱長形第二氣體出氣通道相互平行排列,並且相互間隔排列設置。The reaction gas delivery device according to claim 1, wherein each of the elongated first gas outlet passages and each of the elongated second gas outlet passages are arranged in parallel with each other and are arranged at intervals. 如申請專利範圍第1項或第2項所述的反應氣體輸送裝置,其中每一該縱長形第一氣體出氣通道為縱長形的縫隙通道。The reaction gas delivery device according to claim 1 or 2, wherein each of the elongated first gas outlet passages is a longitudinal slit passage. 如申請專利範圍第1項或第2項所述的反應氣體輸送裝置,其中每一該縱長形第二氣體出氣通道為縱長形的縫隙通道。The reaction gas delivery device according to claim 1 or 2, wherein each of the elongated second gas outlet passages is a longitudinal slit passage. 如申請專利範圍第1項或第2項所述的反應氣體輸送裝置,其中每一該縱長形第一氣體出氣通道包含複數個孔通道,該複數個孔通道整體上構成一縱長形的出氣通道。The reaction gas delivery device of claim 1 or 2, wherein each of the elongated first gas outlet passages comprises a plurality of orifice passages, the plurality of orifice passages integrally forming a longitudinal shape. Outlet passage. 如申請專利範圍第1項或第2項所述的反應氣體輸送裝置,其中每一該縱長形第二氣體出氣通道包含複數個孔通道,該複數個孔通道整體上構成一縱長形的出氣通道。The reaction gas delivery device of claim 1 or 2, wherein each of the elongated second gas outlet passages comprises a plurality of orifice passages, the plurality of orifice passages integrally forming a longitudinal shape Outlet passage. 如申請專利範圍第1項或第2項所述的反應氣體輸送裝置,其中每一該縱長形的氣體導流條位於每一該縱長形第一氣體出氣通道及每一該縱長形第二氣體出氣通道之間。The reaction gas delivery device of claim 1 or 2, wherein each of the elongated gas guiding strips is located in each of the elongated first gas outlet passages and each of the elongated shapes Between the second gas outlet passages. 如申請專利範圍第7項所述的反應氣體輸送裝置,其中該縱長形的氣體導流條的下表面為向反應氣體製程處理區域凸出的弧形表面。The reaction gas delivery device of claim 7, wherein the lower surface of the elongated gas guiding strip is an arcuate surface that protrudes toward the reactive gas processing region. 如申請專利範圍第7項所述的反應氣體輸送裝置,其中該縱長形的氣體導流條的下表面為向反應氣體製程處理區域凹陷的弧形表面。The reaction gas delivery device of claim 7, wherein the lower surface of the elongated gas guiding strip is an arcuate surface that is recessed toward the reactive gas processing region. 如申請專利範圍第9項所述的反應氣體輸送裝置,其中該向製程處理區域凹陷的弧形表面與該縱長形第一氣體出氣通道及該縱長形第二氣體出氣通道的通道側面連接處為弧形。The reaction gas delivery device according to claim 9, wherein the curved surface of the process processing region recessed is connected to the longitudinal side first gas outlet passage and the longitudinal side second gas outlet passage. It is curved. 如申請專利範圍第1項所述的反應氣體輸送裝置,其中每一該縱長形的氣體導流條兩側分別連接縱長形的一子氣體導流條,該縱長形的氣體導流條與縱長形的該子氣體導流條相互平行並相互間隔一距離設置,二者之間形成一子氣體通道,該子氣體通道與該縱長形第一氣體出氣通道或該縱長形第二氣體出氣通道在豎直的截面方向上呈一銳角。The reaction gas delivery device of claim 1, wherein each of the elongated gas guiding strips is connected to a longitudinally-shaped gas guiding strip on each side thereof, the elongated gas guiding flow. The sub-gas guide strips of the strip and the longitudinal shape are parallel to each other and spaced apart from each other, and a sub-gas passage is formed therebetween, the sub-gas passage and the longitudinal first gas outlet passage or the elongated shape The second gas outlet passage has an acute angle in the vertical cross-sectional direction. 如申請專利範圍第1項所述的反應氣體輸送裝置,其中該縱長形第一氣體出氣通道為寬度小於該縱長形第一氣體擴散槽的槽寬度的縱長形的縫隙通道或直徑小於該縱長形第一氣體擴散槽的槽寬度的複數個孔通道;該縱長形第二氣體出氣通道為寬度小於該縱長形第二氣體擴散槽的槽寬度的縱長形的縫隙通道或直徑小於該縱長形第二氣體擴散槽的槽寬度的複數個孔通道。The reaction gas delivery device of claim 1, wherein the elongated first gas outlet passage is a longitudinally narrow slit passage having a width smaller than a groove width of the longitudinal first gas diffusion groove or a diameter smaller than a plurality of hole passages of the slot width of the elongated first gas diffusion groove; the longitudinal second gas outlet passage is a longitudinal slit passage having a width smaller than a groove width of the longitudinal second gas diffusion groove or A plurality of pore passages having a diameter smaller than a groove width of the elongated second gas diffusion groove. 如申請專利範圍第1項所述的反應氣體輸送裝置,其中該反應氣體輸送裝置至少包含一邊緣區域及一中心區域,位於該邊緣區域內的該縱長形第一氣體出氣通道及該縱長形第二氣體出氣通道的截面豎直長度與位於該中心區域內的該縱長形第一氣體出氣通道及該縱長形第二氣體出氣通道的截面豎直長度不相同或相同。The reaction gas delivery device of claim 1, wherein the reaction gas delivery device comprises at least an edge region and a central region, the elongated first gas outlet passage and the lengthwise length in the edge region. The vertical length of the section of the second gas outlet passage is different from or the same as the vertical length of the section of the elongated first gas outlet passage and the elongated second gas outlet passage located in the central region. 如申請專利範圍第1項所述的反應氣體輸送裝置,其中該反應氣體輸送裝置至少包含一邊緣區域及一中心區域,該邊緣區域的該縱長形第一氣體擴散槽的槽凹陷深度大於該中心區域的該縱長形第一氣體擴散槽的槽凹陷深度,該邊緣區域的該縱長形第二氣體擴散槽的槽凹陷深度大於該中心區域的該縱長形第二氣體擴散槽的槽凹陷深度。The reaction gas delivery device of claim 1, wherein the reaction gas delivery device comprises at least an edge region and a central region, wherein the elongated first gas diffusion groove of the edge region has a groove depression depth greater than the a groove recess depth of the elongated first gas diffusion groove in the central region, the groove recess depth of the elongated second gas diffusion groove of the edge region being greater than the groove of the elongated second gas diffusion groove of the central region Depth depth. 一種化學氣相沉積或磊晶層成長反應器,包含一反應腔,該反應腔內設置一基板承載架,該基板承載架上方設置一如申請專利範圍第1項至第14項中任一項所述的反應氣體輸送裝置。A chemical vapor deposition or epitaxial layer growth reactor comprising a reaction chamber in which a substrate carrier is disposed, and the substrate carrier is disposed above any one of items 1 to 14 of the patent application scope The reaction gas delivery device. 一種製作氣體輸送裝置的方法,該方法包含下列步驟: 提供具有一定厚度的一板材用以製作一氣體輸送板,該板材具有相對平行的上表面及下表面; 在該板材的該上表面沿某一水平方向開鑿製作相互平行且具有一定深度的縱長形第一氣體擴散槽及縱長形第二氣體擴散槽,該縱長形第一氣體擴散槽及該縱長形第二氣體擴散槽交替設置;在該縱長形第一氣體擴散槽的槽底開鑿設置寬度小於該縱長形第一氣體擴散槽的槽寬度的縱長形的縫隙通道或直徑小於該縱長形第一氣體擴散槽槽寬度的複數個孔通道,該縫隙通道或該孔通道構成第一氣體出氣通道,在該縱長形第二氣體擴散槽的槽底開鑿設置寬度小於該縱長形第二氣體擴散槽槽寬度的縱長形的縫隙通道或直徑小於該縱長形第二氣體擴散槽槽寬度的複數個孔通道,該縫隙通道或該孔通道構成第二氣體出氣通道;每一該第一出氣通道及每一該第二氣體出氣通道之間的該板材構成縱長形的氣體導流條; 在每一該氣體導流條內部開鑿設置縱長形的冷卻通道;設置每一該縱長形的氣體導流條的下表面為具有一定弧度的下表面或尖錐形下表面; 在製作完成的該氣體輸送板的上表面緊密固定一密封板,將該密封板上對應每一該縱長形第二氣體擴散槽的區域挖空設置,在該密封板上對應每一該縱長形的第一氣體擴散槽的位置設置至少一輸送管插介面; 在該氣體輸送板上方一定距離設置一隔離板,該隔離板及該氣體輸送板之間形成第二氣體擴散區域,在該隔離板上對應每一該輸送管插介面的位置設置一小孔,每一該小孔及其對應的該輸送管插介面處插入一第一氣體輸送管,該第一氣體輸送管與該小孔及該輸送管插介面連接處密封設置;以及 在該隔離板上方一定距離設置一頂板,該頂板與該隔離板之間形成第一氣體擴散區域。A method of fabricating a gas delivery device, the method comprising the steps of: providing a plate having a thickness to form a gas delivery plate having relatively parallel upper and lower surfaces; along the upper surface of the plate Longitudinally forming a vertically elongated first gas diffusion groove and a longitudinally elongated second gas diffusion groove in a horizontal direction, the longitudinal first gas diffusion groove and the longitudinal second gas diffusion groove alternate Providing a longitudinally-shaped slit channel having a width smaller than a groove width of the longitudinal first gas diffusion groove or a diameter smaller than the longitudinal first gas diffusion groove at a groove bottom of the elongated first gas diffusion groove a plurality of hole passages having a groove width, the slit channel or the hole passage forming a first gas outlet passage, wherein a width of the groove bottom of the elongated second gas diffusion groove is smaller than a width of the longitudinal second gas diffusion groove groove a longitudinal slit passage or a plurality of orifice passages having a diameter smaller than a width of the longitudinal second gas diffusion groove, the slit passage or the orifice passage forming a second gas outlet a channel; each of the first gas outlet channel and each of the second gas outlet channels form a longitudinal gas guiding strip; and each of the gas guiding strips is provided with a longitudinal cooling channel Providing a lower surface or a tapered lower surface of each of the longitudinal gas guiding strips; a sealing plate is tightly fixed on the upper surface of the finished gas conveying plate, and the sealing is sealed The area corresponding to each of the elongated second gas diffusion grooves is hollowed out on the plate, and at least one conveying pipe insertion surface is disposed on the sealing plate corresponding to the position of each of the longitudinal first gas diffusion grooves; A spacer is disposed at a distance above the gas conveying plate, and a second gas diffusion region is formed between the partition plate and the gas conveying plate, and a small hole is disposed on the spacer plate corresponding to a position of each of the conveying pipe insertion interfaces, a first gas delivery tube is inserted into the small hole and the corresponding insertion surface of the delivery tube, and the first gas delivery tube is sealed with the small hole and the connection surface of the delivery tube; and a top of the isolation plate Distance setting a top plate forming a first diffusion region between the gas and the separator plate. 如申請專利範圍第16項所述的方法,其中在製作該氣體輸送板時,設置該氣體輸送板靠近邊緣區域的該縱長形第一氣體擴散槽及該縱長形第二氣體擴散槽的槽深度大於靠近中心區域的該縱長形第一氣體擴散槽及該縱長形第二氣體擴散槽的槽深度。The method of claim 16, wherein when the gas conveying plate is fabricated, the longitudinal first gas diffusion groove of the gas conveying plate near the edge region and the longitudinal second gas diffusion groove are disposed. The groove depth is greater than the groove depth of the elongated first gas diffusion groove and the elongated second gas diffusion groove near the central portion. 如申請專利範圍第16項所述的方法,其中製作該氣體輸送板下表面時,設置該縱長形的氣體導流條的該下表面為向下凸起的弧形表面或向上凹進的弧形表面。The method of claim 16, wherein when the lower surface of the gas conveying plate is fabricated, the lower surface of the elongated gas guiding strip is provided with a downwardly convex curved surface or upwardly recessed. Curved surface.
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