CN116646282A - Air inlet nozzle and dry chemical etching equipment - Google Patents

Air inlet nozzle and dry chemical etching equipment Download PDF

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Publication number
CN116646282A
CN116646282A CN202310671694.0A CN202310671694A CN116646282A CN 116646282 A CN116646282 A CN 116646282A CN 202310671694 A CN202310671694 A CN 202310671694A CN 116646282 A CN116646282 A CN 116646282A
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CN
China
Prior art keywords
gas
air
nozzle
air inlet
transmission channel
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CN202310671694.0A
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Chinese (zh)
Inventor
李俊
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Chenwei Equipment Technology Suzhou Co ltd
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Chenwei Equipment Technology Suzhou Co ltd
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Priority to CN202310671694.0A priority Critical patent/CN116646282A/en
Publication of CN116646282A publication Critical patent/CN116646282A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The application relates to the technical field of semiconductor equipment, in particular to an air inlet nozzle and dry chemical etching equipment, wherein the air inlet nozzle comprises a nozzle body, and comprises a first gas transmission channel and a plurality of second gas transmission channels, wherein the directions of the gas transmission channels are consistent; the first air outlet is arranged at the bottom center position of the nozzle body, and is an air outlet of the first air transmission channel; the second air outlets are arranged at intervals along the circumferential direction of the first air outlet, and the second air outlets are air outlets of the second air transmission channel; the second gas transmission channel comprises an inclined transmission channel, and a gas outlet of the inclined transmission channel is used as the second gas outlet; the inclined transmission channel is arranged at an included angle with the central axis of the nozzle body in the direction away from the central axis of the nozzle body. The air inlet nozzle can adjust the gas distribution at the edge and the center of the cavity of the dry chemical etching equipment, and improve the etching uniformity.

Description

Air inlet nozzle and dry chemical etching equipment
Technical Field
The application relates to the technical field of semiconductor equipment, in particular to an air inlet nozzle and dry chemical etching equipment.
Background
The semiconductor dry chemical etching technology is one new etching technology and may be used widely in the advanced logic etching and memory etching, partial substitution of advanced cleaning technology. Conventional dry etching techniques rely on plasma for etching, with etch selectivity typically less than 30, whereas semiconductor dry chemical etching techniques can achieve higher etch selectivity in a plasma-free atmosphere, with dry chemical etch selectivity typically greater than 500.
The design of the throttle plate in the existing dry chemical etching equipment is insufficient to balance the air flow in the center and the air flow at the edge in the cavity, so that the process gas in the cavity has the distribution condition of large central gas flow and small edge gas flow, and the process gas is excessively concentrated in the central area of the wafer surface. Especially for the low flow process, when the air flow in the center of the throttling disc is not saturated, the air flow at the edge in the cavity is much smaller than the air flow in the center, even no air flow exists, so that the process air can basically only flow to the center area of the wafer surface, the etching rate of the center area of the wafer surface is much faster than that of the edge area, and the result of uneven etching of the wafer is caused, so that the performance of subsequent products is affected.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present application is to provide an air inlet nozzle and a dry chemical etching apparatus, which are used for solving the technical problem that the non-uniformity of the dry chemical etching is large due to the fact that the process gas of the conventional dry chemical etching apparatus is too concentrated in the central area of the wafer surface.
To achieve the above and other related objects, the present application provides an air intake nozzle comprising:
the nozzle body comprises a first gas transmission channel and a plurality of second gas transmission channels, wherein the gas transmission directions of the first gas transmission channels and the second gas transmission channels are consistent;
the first air outlet is arranged at the bottom center position of the nozzle body, and is an air outlet of the first air transmission channel;
the second air outlets are arranged at intervals along the circumferential direction of the first air outlet, and the second air outlets are air outlets of the second air transmission channel;
the second gas transmission channel comprises an inclined transmission channel, and a gas outlet of the inclined transmission channel is used as the second gas outlet;
the inclined transmission channel is arranged at an included angle with the central axis of the nozzle body in the direction away from the central axis of the nozzle body, and the included angle between the inclined transmission channel and the central axis of the nozzle body is larger than 0 degrees and smaller than or equal to 90 degrees.
In an alternative embodiment of this embodiment, the inclined transfer channel forms an angle with the central axis of the nozzle body of between 30 ° and 70 °.
In an alternative embodiment of the present embodiment, the first gas transmission channel and the second gas transmission channel are both embedded inside the nozzle body; the first gas transmission channel is arranged along the central axis of the nozzle body and penetrates through the nozzle body; the second gas delivery channel is disposed along an edge of the nozzle body.
In an alternative embodiment of this embodiment, the cross-sectional area of the first air outlet increases gradually from an end close to the first air inlet to an end far from the first air inlet, and the first air inlet is an air inlet of the first air transmission channel.
In an optional embodiment of this embodiment, the cross-sectional area of the first gas transmission channel gradually increases from a first gas inlet to the first gas outlet, and the first gas inlet is a gas inlet of the first gas transmission channel.
In an alternative embodiment of the present embodiment, the air intake nozzle further includes a first air intake nozzle and a second air intake nozzle; the first air inlet nozzle is arranged on the nozzle body and is communicated with the first air inlet; the second air inlet nozzle is arranged on the nozzle body and is communicated with the second air inlet, and the second air inlet is an air inlet of the second gas transmission channel.
In an alternative embodiment of the present embodiment, the nozzle body includes:
a nozzle body;
a nozzle cover assembled to the nozzle body;
the first gas transmission channel sequentially penetrates through the nozzle cover and the nozzle main body, and the first gas inlet nozzle is arranged at the top of the nozzle cover.
In an alternative embodiment of the present embodiment, the nozzle body includes an annular gas flow passage annularly arranged along a circumference of the first gas transfer passage, the annular gas flow passage being provided inside the nozzle body; the second air inlet nozzle is communicated with the second air inlet, and comprises: the second air inlet nozzle is communicated with the second air inlets of the second air transmission channels through the annular air flow channels.
In an alternative embodiment of the present embodiment, the cross section of the second air inlet opening is smaller closer to the second air inlet nozzle along the circumferential direction of the first air delivery passage.
In an alternative embodiment of the present embodiment, the plurality of second gas transmission channels are uniformly arranged along the circumferential direction of the first gas transmission channel.
In an optional embodiment of this embodiment, the second gas transmission channel further includes a vertical transmission channel, the vertical transmission channel is integrally formed with the inclined transmission channel, and an air outlet of the vertical transmission channel is connected with an air inlet of the inclined transmission channel.
In an alternative embodiment of the present embodiment, the gas transmitted by the first gas transmission channel and the gas transmitted by the second gas transmission channel are the same.
To achieve the above and other related objects, the present application also provides a dry chemical etching apparatus comprising:
etching the cavity;
the first throttling plate is arranged on the etching cavity;
the gas dissociation recombination cavity is arranged on the first throttling disc and is communicated with the etching cavity through the first throttling disc;
the cavity cover is arranged on the gas dissociation recombination cavity, a nozzle mounting hole is formed in the center of the cavity cover, the nozzle mounting hole penetrates through the cavity cover along the thickness direction, and the nozzle mounting hole is communicated with the gas dissociation recombination cavity;
the bearing base is arranged at the center of the etching cavity;
the air inlet nozzle is arranged in the nozzle mounting hole.
In an alternative embodiment of the present embodiment, the gas dissociation recombination chamber includes:
the grounding electrode is arranged on the first throttling disc;
an insulating ring arranged on the grounding electrode; and
and the working electrode is arranged on the insulating ring.
In an optional embodiment of this embodiment, the gas dissociation recombination device further includes a second throttling plate disposed between the gas dissociation recombination chamber and the chamber cover, the second throttling plate includes an equalization chamber, and the gas dissociation recombination chamber is communicated with the first gas outlet and the second gas outlet through the equalization chamber.
In an optional embodiment of this embodiment, the apparatus further includes a temperature control system, where the temperature control system is disposed on the bearing base.
In an alternative embodiment of the present embodiment, the dry chemical etching apparatus further includes:
one end of the first gas pipeline is connected with the gas supply end, and the other end of the first gas pipeline is communicated with the gas inlet of the first gas transmission channel; and
and one end of the second gas pipeline is connected with the gas supply end, and the other end of the second gas pipeline is communicated with the gas inlet of the second gas transmission channel.
In an optional embodiment of this embodiment, further comprising:
a first flow meter disposed on the first gas line;
and a second flowmeter disposed on the second gas line.
The air inlet nozzle can be applied to dry chemical etching equipment, and comprises a nozzle body, wherein the nozzle body comprises a first gas transmission channel and a plurality of second gas transmission channels, and the gas transmission directions of the first gas transmission channels and the second gas transmission channels are consistent; the first air outlet is arranged at the bottom center position of the nozzle body, and is an air outlet of the first air transmission channel; the second air outlets are arranged at intervals along the circumferential direction of the first air outlet, and the second air outlets are air outlets of the second air transmission channel; the second gas transmission channel comprises an inclined transmission channel, and a gas outlet of the inclined transmission channel is used as the second gas outlet; the inclined transmission channel is arranged at an included angle with the central axis of the nozzle body in the direction away from the central axis of the nozzle body, and the included angle between the inclined transmission channel and the central axis of the nozzle body is larger than 0 degrees and smaller than or equal to 90 degrees. The air inlet nozzle can adjust the gas distribution at the edge and the center of the cavity of the dry chemical etching equipment, thereby improving the etching uniformity.
According to the dry chemical etching equipment, the air inlet nozzle is introduced to adjust the uniformity of air, so that the throttling disc at the top can be removed, and the cost of the whole equipment is reduced.
According to the dry chemical etching equipment, the air inlet nozzle is introduced, and the second throttling disc is reserved, so that the air flow is controlled in an equalizing mode, and the adjustment of the air flow ratio through adjusting the middle and edge processes is increased on the basis of the throttling control of a single passive throttling disc, so that the dry chemical etching equipment is flexible and convenient.
Drawings
Fig. 1 is a schematic diagram of a typical dry chemical etching apparatus.
Fig. 2 is a schematic view of the air intake of the dry chemical etching apparatus shown in fig. 1.
Fig. 3 is a graph showing a gas distribution between the gas inlet side of the dry chemical etching apparatus shown in fig. 1 and a wafer.
Fig. 4 is a schematic view showing the etching rate in the radial direction when a wafer is etched by using the dry chemical etching apparatus shown in fig. 1.
Fig. 5 is a schematic structural view of an air intake nozzle of the present application.
Fig. 6 is a cross-sectional view taken along A-A in fig. 5.
Fig. 7 is a schematic structural view of a modified embodiment of the air intake nozzle of the present application.
Fig. 8 is a schematic structural view of another modified embodiment of the air intake nozzle of the present application.
Fig. 9 is a schematic view of the nozzle body and nozzle cover of the air intake nozzle of the present application clamped.
Fig. 10 is a schematic structural view of a dry chemical etching apparatus equipped with an air intake nozzle of the present application.
Fig. 11 is an air intake schematic diagram of a dry chemical etching apparatus equipped with an air intake nozzle of the present application.
Detailed Description
Other advantages and effects of the present application will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present application with reference to specific examples. The application may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present application.
The semiconductor dry chemical etching is widely applied to isotropic etching of logic devices and memories of the prior process because of no need of depending on plasma atmosphere and high Gao Keshi selection ratio, and partially replaces the cleaning process of the prior process.
As an example, during the etching of the logic device, a lateral etching function may be implemented based on the characteristic of a high selectivity of dry chemical etching. As an example, the method can be applied to the back etching process of a wafer after deep hole etching and deposition in a 3D NAND process, and high-precision etching is realized by virtue of high selectivity of dry chemical etching to different materials. As an example, dry chemical etching is also applied to other advanced semiconductor processes, such as DRAM Air gap and cleaning after conventional dry RIE in advanced processes, to avoid pattern collapse caused by fluid impact.
Fig. 1 shows a schematic structure of a typical dry chemical etching apparatus. Referring to fig. 1, the dry chemical etching apparatus includes an etching chamber 16, a first throttle plate 15, a gas dissociation recombination chamber, a second throttle plate 17, a chamber cover 11, and a load-bearing base 18.
The etching cavity 16 is located at the bottom of the device, and a bearing base 18 for bearing and fixing a wafer 20 is arranged at the bottom center of the etching cavity. The first throttle plate 15 is disposed at the upper part of the etching cavity 16, and the first throttle plate 15 is used for gas equalization. The gas dissociation recombination cavity is arranged on the first throttling plate 15, and is communicated with the etching cavity 16 through the first throttling plate 15; the cavity cover 11 is arranged on the gas dissociation recombination cavity, the center of the cavity cover 11 is provided with a gas inlet 111 serving as a gas inlet channel of process gas, the gas inlet 111 penetrates through the cavity cover 11 along the thickness direction, and the gas inlet 111 is connected with a gas supply end; the second throttling plate 17 is disposed between the gas dissociation recombination chamber and the chamber cover 11, and the second throttling plate 17 includes an equalizing chamber, and the gas dissociation recombination chamber is communicated with the gas inlet 111 through the equalizing chamber.
The gas dissociation recombination cavity comprises a grounding electrode 14, an insulating ring 13 and a working electrode 12, wherein the grounding electrode 14 is arranged on the first throttling disc 15; the insulating ring 13 is arranged on the grounding electrode 14; the working electrode 12 is disposed on the insulating ring 13. The gas dissociation recombination chamber is used for dissociating the process gas redistributed by the second throttling plate 17 to form plasma, filtering charged particles in the plasma, and conveying the reaction gas from which the charged particles are filtered to the first throttling plate 15.
Referring to fig. 2, in dry chemical etching, after flowing into the equalizing cavity of the second throttling plate 17 through the gas inlet 111, the process gas at the gas supply end is diffused and distributed from the center to the edge, and then continuously enters the gas dissociation and recombination cavity downwards to dissociate to form plasma, charged particles in the plasma are filtered by the grounding electrode 14, and the reaction gas after filtering the charged particles continuously passes through the first throttling plate 15 downwards to be distributed again, so that more uniform gas distribution is obtained, and finally, free radicals in the reaction gas react with the wafer 20 on the carrying base 18 to realize etching through chemical reaction with extremely high selectivity.
The dry chemical etching apparatus of fig. 1, since an intermediate gas inlet is provided only in the center of the chamber cover 11, needs to rely on a throttle valve to saturate the center flow, and hard drives the intermediate gas to flow to the edge diffusion by means of the second throttle plate 17 to achieve uniformity of etching. In this scheme, the process gas is too concentrated in the center of the wafer 20, the throttle plate is insufficient to balance the gas flow in the center and the edge, the typical gas distribution is shown in fig. 3, the typical etching rate distribution is shown in fig. 4, and as can be seen from fig. 3 and 4, when etching is performed, the center flow is large, the edge flow is small, the etching rate is faster, the edge is slower, and the etching non-uniformity is greater than 10%.
Particularly, for low flow processes, when the central gas flow of the throttling disc is not saturated, the process gas only flows through the central area, the edge gas flow distribution is small, or the gas flow distribution cannot exist, and the problems are more remarkable.
In view of this, the present application provides an air inlet nozzle 30 using a dry chemical etching apparatus as shown in fig. 5, and the air inlet nozzle 30 is used instead of the air inlet of the dry chemical etching apparatus shown in fig. 1 to overcome the problems of the dry chemical etching apparatus shown in fig. 1.
Referring to fig. 5, the air inlet nozzle 30 includes a nozzle body, on which a first air delivery channel 36 and a second air delivery channel 37 are disposed, and the air delivery directions of the first air delivery channel 36 and the second air delivery channel 37 are consistent, where the same air delivery direction refers to delivery from the top to the bottom of the nozzle body, rather than strictly speaking, the same direction.
The first gas transmission channel 36 is used as a central gas transmission channel, an air inlet of the first gas transmission channel 36 is defined as a first air inlet, an air outlet of the first gas transmission channel 36 is defined as a first air outlet 361, the first air outlet 361 is arranged at the bottom center position of the nozzle body, and the first air outlet 361 is used for connecting an air supply end.
The air inlet nozzle 30 includes a plurality of second air delivery channels 37, the second air delivery channels 37 are used as edge air delivery channels, the plurality of second air delivery channels 37 are arranged at intervals along the circumferential direction of the first air delivery channel 36, the air inlet of the second air delivery channels 37 is defined as a second air inlet, the air outlet of the second air delivery channels 37 is defined as a second air outlet 3721, and the plurality of second air outlets 3721 are arranged at intervals along the circumferential direction of the first air outlet 361, and the second air inlet is used for connecting an air supply end.
Referring to fig. 5, in the present embodiment, the first gas transmission channel 36 is used as a central gas transmission channel and is embedded in the nozzle body; is arranged along the central axis Z of the nozzle body and penetrates through the top and the bottom of the nozzle body. The first gas transmission channel 36 is provided with a first gas inlet and a first gas outlet 361, and the first gas outlet 361 is arranged at the bottom center position of the nozzle body; the first air outlet 361 is used for connecting an air supply end and is located at the top center of the nozzle body. It will be appreciated that in other embodiments, the first air inlet may be disposed at other positions of the nozzle body, so long as the first air outlet 361 is ensured to be disposed at the bottom center position of the nozzle body.
In order to make the first air inlet cover a larger area and make the air flow cover the middle area more uniformly, the first air inlet may be configured to be tapered or trumpet-shaped as shown in fig. 5, so that the cross-sectional area of the first air outlet 361 gradually increases from one end close to the first air inlet to one end far from the first air inlet. Of course, the first gas transmission channel 36 may be formed in a tapered or horn shape, so that the cross-sectional area of the first gas transmission channel 36 may gradually increase from the first gas inlet to the first gas outlet 361, and the same purpose may be achieved.
Referring to fig. 5, in this embodiment, for convenience of piping connection, the air intake nozzle 30 is further provided with a first air intake nozzle 34. The first air inlet nozzle 34 is disposed at a first air inlet position of the nozzle body, and the first air inlet is communicated with the first air inlet nozzle 34, so that connection between the first air transmission channel 36 and the air supply end can be realized through the first air inlet nozzle 34.
Referring to fig. 5, in the present embodiment, the nozzle body may be made of a metal material or a ceramic material, and the nozzle body is mainly made of two parts, namely a nozzle main body 32 and a nozzle cover 31. When the nozzle body is made of metal, the nozzle cover 31 may be mounted on the nozzle body 32 by bolts, welding, or clamping by a clamp 36 as shown in fig. 9. When the nozzle body is made of metal, the nozzle cover 31 may be mounted on the nozzle body 32 by clamping with a clamp 36 as shown in fig. 9.
Specifically, the first gas transmission channel 36 sequentially penetrates through the nozzle cover 31 and the nozzle body 32, and includes a central opening located in the nozzle body 32 and a central through hole located in the nozzle body 32, and the first air inlet nozzle 34 is disposed at the central opening at the top of the nozzle cover 31.
It should be noted that an O-ring is further disposed between the nozzle body 32 and the nozzle cover 31, and the O-ring includes an inner layer sealing ring (not shown) and an outer layer sealing ring (not shown), where the inner layer sealing ring is used to seal and isolate the first gas transmission channel 36 and the second gas transmission channel 37 at the junction of the nozzle body 32 and the nozzle cover 31, and the outer layer sealing ring is used to seal and isolate the second gas transmission channel 37 from the external atmosphere at the junction of the nozzle body 32 and the nozzle cover 31.
Referring to fig. 5, the second gas transmission channels 37 are edge gas transmission channels, and include a plurality of second gas transmission channels 37 arranged at intervals along the circumferential direction of the first gas transmission channel 36.
For ease of processing, the second gas transfer channel 37 may include, for example, an integrally formed vertical transfer channel 371 and inclined transfer channel 372, the vertical transfer channel 371 acting as a vertical tap hole; the air inlet of the vertical transmission channel 371 is used as the second air inlet, the air outlet of the vertical transmission channel 371 is connected with the air inlet of the inclined transmission channel 372, the air outlet of the inclined transmission channel 372 is used as the second air outlet 3721, the inclined transmission channel 372 is arranged at an included angle with the central axis Z of the nozzle body in a direction away from the central axis Z of the nozzle body, and the included angle between the inclined transmission channel 372 and the central axis Z of the nozzle body is larger than 0 DEG and smaller than or equal to 90 deg. By way of example, the angled transfer channel 372 may be at an angle of between 30 ° -70 °, such as 30 °, 40 °, 50 °, 60 °, 70 °, etc., to the central axis Z of the nozzle body.
In the preferred embodiment of the present application, the second gas transmission channel 37 adopts an inclined design, which can reduce the resistance coefficient of the bending region relative to a right angle design, avoid the generation of vortex regions in the bending region due to inertial force, inhibit secondary flow generated by centrifugal inertial force and boundary layer action, reduce flow loss, optimize the flow field characteristics at the second gas outlet 3721, and improve the uniformity and stability of the gas reaching the edge.
Referring to fig. 5, the second air outlets 3721 of the second air transmission channels 37 on the nozzle body are uniformly spaced along the sidewall of the nozzle body. It is to be understood that the second air outlets 3721 of the plurality of second air transmission channels 37 may also be obliquely disposed on the bottom surface of the nozzle body and disposed along the circumferential direction of the first air outlets 361.
It will be appreciated that in an alternative embodiment, the inclined transfer channel 372 is at an angle to the central axis Z of the nozzle body, i.e. the second gas transfer channel 37 comprises a vertical transfer channel 371 and a horizontal transfer channel connected to each other. In another alternative embodiment, the second gas transfer channel 37 may be provided with an inclined shape as a whole, i.e. the second gas transfer channel 37 comprises only the inclined transfer channel 372.
Referring to fig. 5, in this embodiment, in order to facilitate the connection of the pipes and reduce the number of external pipes, the air inlet nozzle 30 may be provided with only one second air inlet nozzle 35, and the second air inlet nozzle 35 may be disposed on a side wall of the nozzle body or at a proper position on the top of the nozzle body, because the second air inlet nozzle 35 is not necessarily opposite to the second air transmission channel 37, the second air inlet nozzle 35 may be disposed on the second air inlet nozzle 35, and the connection between each second air transmission channel 37 and the air supply end may be achieved through the second air inlet nozzle 35.
In order to achieve communication of a single second air inlet nozzle 35 with each second gas transfer passage 37, a planar annular gas flow passage 33 may be provided inside the nozzle body 32, the annular gas flow passage 33 being annularly arranged along the circumference of the first gas transfer passage 36, and the annular gas flow passage 33 being concentrically arranged with a plurality of the second gas transfer passages 37, the annular gas flow passage 33 being in communication with the second air inlet nozzle 35, second air inlets of a plurality of the second gas transfer passages 37 being in communication with the bottom of the annular gas flow passage 33, i.e., the second air inlet nozzle 35 being in communication with the second air inlets of a plurality of the second gas transfer passages through the annular gas flow passage 33.
The annular gas flow channel 33 may be defined by an annular groove recessed inward from the bottom surface of the nozzle cover 31 and the nozzle body 32, as shown in fig. 5, and the second air inlet nozzle 35 is disposed on the side wall of the nozzle cover 31; as shown in fig. 7, the second air inlet nozzle 35 may be formed by an annular groove recessed inwards from the top surface of the nozzle body 32 and the nozzle cover 31, and is arranged on the side wall of the nozzle body 32; as shown in fig. 8, the second air inlet nozzle 35 may be formed by an annular groove recessed inward from the bottom surface of the nozzle cover 31 and an annular groove recessed inward from the top surface of the nozzle body 32, and is disposed on the side wall of the nozzle cover 31.
Specifically, as shown in fig. 6, since only one second air inlet nozzle 35 is provided, in the annular air flow passage 33, the air density is uneven, the air density near the second air inlet nozzle 35 is greater than the air density far from the second air inlet nozzle 35, and in order to ensure that the flow rate of the process air conveyed in each second air conveying passage 37 is the same, the cross-sectional area of the second air inlet is specially designed, and the smaller the cross-section of the second air inlet near the second air inlet nozzle 35 along the circumferential direction of the first air conveying passage 36, in other words, the larger the cross-section of the second air inlet far from the second air inlet nozzle 35, the same flow rate of the process air conveyed in each second air conveying passage 37 is ensured. The proportional relation of the cross-sectional areas of the second air inlets can be determined according to the process gas and the application and the simulation result.
Taking the circular hole-shaped second gas transmission channel 37 as an example in fig. 6, the edge process gas enters the vertical transmission channel 371 as a vertical split hole through the annular gas flow channel 33 and flows out through the inclined transmission channel 372, in order to ensure the uniformity of the gas flow in all directions, the aperture of the vertical transmission channel 371 is gradually increased from the gas inlet direction to two sides, and the specific proportional relationship is determined according to the process gas and the application by the simulation result. As an example, the aperture of the vertical transfer passage 371 increases proportionally from the intake direction to both sides.
It should be noted that, in order to ensure the stability of the edge gas supply, it is necessary to ensure that the plurality of second gas transmission channels 37 are uniformly arranged along the circumferential direction of the first gas transmission channel 36, that is, the center-to-center distances between two adjacent second gas transmission channels 37 are the same, and the included angles between the two adjacent second gas transmission channels 37 and the center of the circumference are the same. Taking 8 second gas transmission channels 37 as an example in fig. 6, the center-to-center distances between two adjacent second gas transmission channels 37 are the same along the circumferential direction, and are equal to one eighth of the circumference of the circle where the center of the cross section of each second gas transmission channel 37 is located, and the included angle between the two adjacent second gas transmission channels 37 and the center of the circle is 45 degrees.
It should be noted that, the first gas transmission channel 36 and the second gas transmission channel 37 of the nozzle body may be replaced by pipes in whole or in part, instead of the above-mentioned method of forming holes in the nozzle body.
Fig. 10 shows a schematic structural view of a dry chemical etching apparatus equipped with the above-described air intake nozzle 30. As shown in fig. 10, the dry chemical etching apparatus is different from the dry chemical etching apparatus shown in fig. 1 in that the gas inlet 111 in fig. 1 is modified as a nozzle mounting hole in which the gas inlet nozzle 30 is mounted, and the gas transmitted by the first gas transmission passage 36 and the second gas transmission passage 37 of the gas inlet nozzle 30 may be the same, or may be different.
Specifically, referring to fig. 10, the dry chemical etching apparatus includes an etching chamber 16, a first throttle plate 15, a gas dissociation recombination chamber, a second throttle plate 17, a chamber cover 11, a load-bearing base 18, and an air inlet nozzle 30.
The etching chamber 16 is located at the bottom of the apparatus, and a load base 18 for carrying a fixed wafer 20 is disposed at the center thereof. The first throttle plate 15 is disposed at the upper part of the etching cavity 16, and the first throttle plate 15 is used for gas equalization. The gas dissociation recombination cavity is arranged on the first throttling plate 15, and is communicated with the etching cavity 16 through the first throttling plate 15; the cavity cover 11 is arranged on the gas dissociation recombination cavity, a nozzle mounting hole for mounting the air inlet nozzle 30 is arranged in the center of the cavity cover 11, and the nozzle mounting hole penetrates through the cavity cover 11 along the thickness direction; the second throttling plate 17 is disposed between the gas dissociation and recombination chamber and the chamber cover 11, and the second throttling plate 17 includes an equalizing chamber 171, and the gas dissociation and recombination chamber is communicated with the first air outlet 361 of the first gas transmission channel 36 and the second air outlet 3721 of the second gas transmission channel 37 of the air inlet nozzle 30 through the equalizing chamber 171.
Referring to fig. 10, the gas dissociation recombination chamber includes a ground electrode 14, an insulating ring 13, and a working electrode 12, where the ground electrode 14 is disposed on the first throttle disk 15; the insulating ring 13 is arranged on the grounding electrode 14; the working electrode 12 is disposed on the insulating ring 13. The gas dissociation recombination chamber is used for dissociating the process gas redistributed by the second throttling plate 17 to form plasma, filtering charged particles in the plasma, and conveying the reaction gas from which the charged particles are filtered to the first throttling plate 15. In addition, the bottoms of the grounding electrode 14 and the working electrode 12 are arranged in a porous mode similar to a throttling disc, and a certain throttling balance effect can be achieved.
In this embodiment, the dry chemical etching apparatus may further be provided with a temperature control system (not shown), which may be disposed on the load base 18, for controlling the temperature of the wafer 20.
In this embodiment, the dry chemical etching apparatus further includes a first gas line (not shown) and a second gas line (not shown). One end of the first gas pipeline is connected with a gas supply end, and the other end of the first gas pipeline is communicated with the second gas inlet; one end of the second gas pipeline is connected with the gas supply end, and the other end of the second gas pipeline is communicated with the second gas inlet.
In this embodiment, in order to precisely control the gas flow rate ratio in the first gas delivery passage 36 and the second gas delivery passage 37 in the gas inlet nozzle 30, the dry chemical etching apparatus is further provided with a first flow meter and a second flow meter; the first flow meter is disposed on the first gas line for controlling the flow of process gas delivered to the first gas delivery channel 36, and the second flow meter is disposed on the second gas line for controlling the flow of process gas delivered to the second gas delivery channel 37. The process personnel can correspondingly adjust the flow ratio of the middle edge of the air flow according to the etching speed of the middle and the edge of the wafer 20, so as to realize the uniformity of the etching of the wafer 20.
It should be noted that, in an alternative embodiment, the air inlet nozzle 30 may be provided, so that the second throttle plate 17 may not be provided, thereby reducing the cost of the whole apparatus.
Referring to fig. 11, during dry chemical etching, the process gas at the gas supply end is simultaneously supplied to the center of the chamber through the first gas outlet 361 of the first gas transmission channel 36, is supplied to the edge of the chamber through the second gas outlets 3721 of the plurality of second gas transmission channels 37, flows into the equalizing chamber 171 of the second throttle plate 17, is uniformly distributed, then enters the gas dissociation recombination chamber downwards to dissociate to form plasma, charged particles in the plasma are filtered by the ground electrode 14, and the reaction gas from which the charged particles are filtered continues to downwards pass through the first throttle plate 15 to be redistributed, so that more uniform gas distribution is obtained, and finally, the free radicals in the reaction gas react with the wafer 20 on the bearing base 18, and etching is realized through chemical reaction with extremely high selectivity.
Because the second gas transmission channel 37 at the edge is added, the process gas is divided into two paths after being split by the gas flowmeter, one path is input into the first gas transmission channel 36 positioned in the middle, and the other path is input into the second gas transmission channel 37 positioned at the edge, therefore, even under the condition that the central gas supply is unsaturated in the process of small flow, the uniform distribution of the process gas can be realized by increasing the gas flow in the second gas transmission channel 37 at the edge and reducing the gas flow in the first gas transmission channel 36 in the middle under the condition that the total gas supply flow is ensured to be unchanged, and the uniformity of etching is realized.
Compared with fig. 1, the dry chemical etching device shown in fig. 10 is more flexible and convenient by introducing the air inlet nozzle 30 and reserving the second throttling disk 17, so that the air flow is balanced and controlled, and the adjustment of the air flow ratio by adjusting the middle and edge processes is increased on the basis of the throttling control of a single passive throttling disk.
In summary, the air inlet nozzle 30 of the present application can be applied to dry chemical etching equipment, and comprises a nozzle body including a first gas transmission channel 36 and a plurality of second gas transmission channels 37 with consistent gas transmission directions; the first air outlet 361 is arranged at the bottom center position of the nozzle body, and is an air outlet of the first air transmission channel 36; the second gas outlets 3721 are arranged at intervals along the circumferential direction of the first gas outlet 361, and the second gas outlets 3721 are gas outlets of the second gas transmission channel 37; the second gas transmission channel 37 includes an inclined transmission channel 372, and a gas outlet of the inclined transmission channel 372 serves as the second gas outlet 3721; the inclined transmission channel 372 is arranged at an included angle with the central axis Z of the nozzle body in a direction away from the central axis Z of the nozzle body, and the included angle between the inclined transmission channel 372 and the central axis Z of the nozzle body is more than 0 degrees and less than or equal to 90 degrees. The dry chemical etching apparatus of the present application can remove the throttle plate at the top and reduce the cost of the entire apparatus because the gas uniformity adjustment is performed by introducing the gas inlet nozzle 30. The dry chemical etching equipment of the application, because of introducing the air inlet nozzle 30 and reserving the second throttling disk 17, can control the air flow balance, and on the basis of the throttling control of a single passive throttling disk, the adjustment of the air flow ratio by adjusting the middle and edge processes is increased, so that the dry chemical etching equipment is more flexible and more convenient.
In the description herein, numerous specific details are provided, such as examples of components and/or methods, to provide a thorough understanding of embodiments of the application. One skilled in the relevant art will recognize, however, that an embodiment of the application can be practiced without one or more of the specific details, or with other apparatus, systems, components, methods, components, materials, parts, and so forth.
It will also be appreciated that one or more of the elements shown in the figures may also be implemented in a more separated or integrated manner, or even removed because of inoperability in certain circumstances or provided because it may be useful depending on the particular application.
In addition, any labeled arrows in the drawings/figures should be considered only as exemplary, and not limiting, unless otherwise specifically indicated. Furthermore, the term "or" as used herein is generally intended to mean "and/or" unless specified otherwise. Combinations of parts or steps will also be considered as being noted where terminology is foreseen as rendering the ability to separate or combine is unclear.
The above description of illustrated embodiments of the application, including what is described in the abstract, is not intended to be exhaustive or to limit the application to the precise forms disclosed herein. Although specific embodiments of, and examples for, the application are described herein for illustrative purposes only, various equivalent modifications are possible within the spirit and scope of the present application, as those skilled in the relevant art will recognize and appreciate. As noted, these modifications can be made to the present application in light of the foregoing description of illustrated embodiments of the present application and are to be included within the spirit and scope of the present application.
The systems and methods have been described herein in general terms as being helpful in understanding the details of the present application. Furthermore, various specific details have been set forth in order to provide a thorough understanding of embodiments of the application. One skilled in the relevant art will recognize, however, that an embodiment of the application can be practiced without one or more of the specific details, or with other apparatus, systems, assemblies, methods, components, materials, parts, and/or the like. In other instances, well-known structures, materials, and/or operations are not specifically shown or described in detail to avoid obscuring aspects of embodiments of the application.
Thus, although the present application has been described herein with reference to particular embodiments thereof, a latitude of modification, various changes and substitutions are intended in the foregoing disclosures, and it will be appreciated that in some instances some features of the application will be employed without a corresponding use of other features without departing from the scope and spirit of the application as set forth. Therefore, many modifications may be made to adapt a particular situation or material to the essential scope and spirit of the present application. It is intended that the application not be limited to the particular terms used in following claims and/or to the particular embodiment disclosed as the best mode contemplated for carrying out this application, but that the application will include any and all embodiments and equivalents falling within the scope of the appended claims. Accordingly, the scope of the application should be determined only by the following claims.

Claims (18)

1. An intake nozzle, characterized by comprising:
the nozzle body comprises a first gas transmission channel and a plurality of second gas transmission channels, wherein the gas transmission directions of the first gas transmission channels and the second gas transmission channels are consistent;
the first air outlet is arranged at the bottom center position of the nozzle body, and is an air outlet of the first air transmission channel;
the second air outlets are arranged at intervals along the circumferential direction of the first air outlet, and the second air outlets are air outlets of the second air transmission channel;
the second gas transmission channel comprises an inclined transmission channel, and a gas outlet of the inclined transmission channel is used as the second gas outlet;
the inclined transmission channel is arranged at an included angle with the central axis of the nozzle body in the direction away from the central axis of the nozzle body, and the included angle between the inclined transmission channel and the central axis of the nozzle body is larger than 0 degrees and smaller than or equal to 90 degrees.
2. An air inlet nozzle according to claim 1, wherein the inclined transfer channel is at an angle of between 30 ° and 70 ° to the central axis of the nozzle body.
3. The air intake nozzle of claim 1, wherein the first and second gas delivery passages are each embedded within the nozzle body; the first gas transmission channel is arranged along the central axis of the nozzle body and penetrates through the nozzle body; the second gas delivery channel is disposed along an edge of the nozzle body.
4. The air intake nozzle of claim 3, wherein the first air outlet has a cross-sectional area that gradually increases from an end near the first air inlet to an end far from the first air inlet, the first air inlet being an air inlet of the first air delivery passage.
5. The air intake nozzle of claim 3, wherein the first gas transfer passage increases in cross-sectional area from a first air inlet to the first air outlet, the first air inlet being an air inlet of the first gas transfer passage.
6. The air intake nozzle of claim 1, further comprising a first air intake nozzle and a second air intake nozzle; the first air inlet nozzle is arranged on the nozzle body and is communicated with the first air inlet; the second air inlet nozzle is arranged on the nozzle body and is communicated with the second air inlet, and the second air inlet is an air inlet of the second gas transmission channel.
7. The air intake nozzle of claim 6, wherein the nozzle body comprises:
a nozzle body;
a nozzle cover assembled to the nozzle body;
the first gas transmission channel sequentially penetrates through the nozzle cover and the nozzle main body, and the first gas inlet nozzle is arranged at the top of the nozzle cover.
8. The air intake nozzle according to claim 7, wherein the nozzle body includes an annular gas flow passage annularly arranged along a circumference of the first gas transfer passage, the annular gas flow passage being provided inside the nozzle body; the second air inlet nozzle is communicated with the second air inlet, and comprises: the second air inlet nozzle is communicated with the second air inlets of the second air transmission channels through the annular air flow channels.
9. The air intake nozzle of claim 7, wherein a cross section of the second air inlet opening is smaller closer to the second air inlet nozzle in a circumferential direction of the first air delivery passage.
10. The air intake nozzle of claim 6, wherein the second air delivery channel further comprises a vertical delivery channel integrally formed with the angled delivery channel, an air outlet of the vertical delivery channel being engaged with an air inlet of the angled delivery channel.
11. The air intake nozzle of claim 1, wherein a plurality of the second gas delivery passages are uniformly arranged along a circumferential direction of the first gas delivery passage.
12. The air intake nozzle of claim 1, wherein the gas delivered by the first gas delivery passage and the second gas delivery passage are the same.
13. A dry chemical etching apparatus, comprising:
etching the cavity;
the first throttling plate is arranged on the etching cavity;
the gas dissociation recombination cavity is arranged on the first throttling disc and is communicated with the etching cavity through the first throttling disc;
the cavity cover is arranged on the gas dissociation recombination cavity, a nozzle mounting hole is formed in the center of the cavity cover, the nozzle mounting hole penetrates through the cavity cover along the thickness direction, and the nozzle mounting hole is communicated with the gas dissociation recombination cavity;
the bearing base is arranged at the center of the etching cavity;
the air intake nozzle according to any one of claims 1 to 12, mounted to the nozzle mounting hole;
the first air outlet and the second air outlet are both communicated with the gas dissociation recombination cavity, and the second air outlet is the air outlet of the second gas transmission channel.
14. The dry chemical etching apparatus according to claim 13, wherein the gas dissociation recombination chamber comprises:
the grounding electrode is arranged on the first throttling disc;
an insulating ring arranged on the grounding electrode; and
and the working electrode is arranged on the insulating ring.
15. The dry chemical etching apparatus according to claim 13, further comprising a second throttle plate disposed between the gas dissociation recombination chamber and the chamber cover, the second throttle plate including an equalization chamber through which the gas dissociation recombination chamber communicates with the first gas outlet and the second gas outlet.
16. The dry chemical etching apparatus according to claim 13, further comprising a temperature control system disposed on the load-bearing base.
17. The dry chemical etching apparatus according to claim 13, further comprising:
one end of the first gas pipeline is connected with the gas supply end, and the other end of the first gas pipeline is communicated with the gas inlet of the first gas transmission channel; and
and one end of the second gas pipeline is connected with the gas supply end, and the other end of the second gas pipeline is communicated with the gas inlet of the second gas transmission channel.
18. The dry chemical etching apparatus according to claim 17, further comprising:
a first flow meter disposed on the first gas line;
and a second flowmeter disposed on the second gas line.
CN202310671694.0A 2023-06-07 2023-06-07 Air inlet nozzle and dry chemical etching equipment Pending CN116646282A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310671694.0A CN116646282A (en) 2023-06-07 2023-06-07 Air inlet nozzle and dry chemical etching equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310671694.0A CN116646282A (en) 2023-06-07 2023-06-07 Air inlet nozzle and dry chemical etching equipment

Publications (1)

Publication Number Publication Date
CN116646282A true CN116646282A (en) 2023-08-25

Family

ID=87618761

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310671694.0A Pending CN116646282A (en) 2023-06-07 2023-06-07 Air inlet nozzle and dry chemical etching equipment

Country Status (1)

Country Link
CN (1) CN116646282A (en)

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