CN115505904A - Spray set of many gas flow channel - Google Patents
Spray set of many gas flow channel Download PDFInfo
- Publication number
- CN115505904A CN115505904A CN202211329081.0A CN202211329081A CN115505904A CN 115505904 A CN115505904 A CN 115505904A CN 202211329081 A CN202211329081 A CN 202211329081A CN 115505904 A CN115505904 A CN 115505904A
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- gas
- gas distribution
- spraying
- distribution
- plate
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- 239000007921 spray Substances 0.000 title claims description 15
- 239000007789 gas Substances 0.000 claims abstract description 146
- 238000009826 distribution Methods 0.000 claims abstract description 69
- 238000005507 spraying Methods 0.000 claims abstract description 36
- 238000010926 purge Methods 0.000 claims description 10
- 239000000376 reactant Substances 0.000 claims description 10
- 230000000903 blocking effect Effects 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000002243 precursor Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000007736 thin film deposition technique Methods 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
The invention relates to the technical field of semiconductor manufacturing equipment, in particular to a spraying device with multiple airflow channels. The invention provides a multi-airflow-channel spraying device, which comprises a spraying upper plate, an air distribution lining and a spraying lower plate: the spraying upper plate is provided with a first air inlet and a second air inlet; the first air inlet is positioned at the central shaft position, and the second air inlet is obliquely and downwards directed to the central shaft direction; the central shaft of the gas distribution bush is provided with a first gas distribution channel which is connected with the first gas inlet and used for receiving a first reaction source gas; the edge position of the gas distribution bush is provided with an annular flow passage which is connected with a second gas inlet and used for receiving a second reaction source gas; the lower plate is sprayed, and two kinds of reaction source gases guided by the gas distribution lining are sprayed into the reaction space. The invention can lead the two reaction source gases to enter through the independent flow channels without meeting before entering the reaction area, and can achieve the effect of uniformly distributing the gases.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing equipment, in particular to a spraying device with multiple airflow channels.
Background
Thin film deposition techniques are used to fabricate thin films for microelectronic devices to form deposits on a substrate, and common thin film deposition techniques include physical vapor deposition, chemical vapor deposition, and the like.
As the development of microelectronic and deep submicron chip technologies requires ever decreasing dimensions of devices and materials, and increasing aspect ratios in devices, the thickness of the materials used is reduced to the order of a few nanometers.
ALD (Atomic layer deposition) is a method that can plate substances on the surface of a substrate layer by layer in the form of a single Atomic film, and compared with other deposition methods, the ALD has excellent controllability on the components and thickness of the film, and the prepared film has good conformality, high purity and uniformity, so it is favored in the field of semiconductor material preparation.
In the semiconductor ALD coating process, two or more gases are often required to be introduced into the cavity simultaneously for reaction, so that higher requirements are put on the spraying device, and different gases cannot meet before entering a reaction region.
In the spraying device in the prior art, a multilayer structure and inner pore channels of laminates are usually adopted to form mutually isolated gas channels, and dense gas guide columns and other parts are welded among the laminates, so that the flow of gas is uneven, and the process stability is influenced.
Disclosure of Invention
The invention aims to provide a spraying device with multiple gas flow channels, which solves the problems that two or more reaction gases are difficult to independently feed and the uniformity of gas flow direction is low in the spraying device in the prior art.
In order to achieve the above object, the present invention provides a multi-airflow-channel spraying device, which comprises a spraying upper plate, an air distribution liner and a spraying lower plate:
the spraying upper plate is provided with a first air inlet and a second air inlet;
the first gas inlet is positioned at the position of the central shaft and is used for introducing a first reaction source gas;
the second gas inlet is obliquely and downwards directed to the central axis direction and is used for introducing a second reaction source gas;
the input end of the gas distribution lining is connected with the upper spraying plate, and the output end of the gas distribution lining is connected with the lower spraying plate;
the central shaft of the gas distribution bush is provided with a first gas distribution channel which is connected with the first gas inlet and used for receiving a first reaction source gas;
the edge position of the gas distribution bush is provided with an annular flow passage which is connected with a second gas inlet and used for receiving a second reaction source gas;
the lower spraying plate is used for spraying two reaction source gases guided by the gas distribution lining into the reaction space.
In one embodiment, the gas distribution liner is internally provided with a plurality of guide grooves;
the bottom of the annular flow passage of the gas distribution lining is provided with a plurality of inclined holes, and the inclined holes are connected with the diversion trenches.
In one embodiment, the plurality of inclined holes have different diameters.
In an embodiment, the spraying device with multiple gas flow channels further comprises a gas distribution baffle, which is arranged at the bottom of the gas distribution lining close to the central axis and is positioned at the inner side of the gas outlet of the inclined hole, and guides the second reactant gas to the periphery for distribution after blocking.
In an embodiment, the gas distribution baffle has a plurality of through holes formed in a bottom thereof, and is configured to circumferentially guide and distribute the first precursor gas and the second precursor gas.
In one embodiment, the spraying device with multiple gas flow channels further comprises a purging passage which is arranged at the edge position of the gas distribution lining.
In one embodiment, the edge of the upper surface of the gas distribution bush is provided with a gas guide groove.
In one embodiment, the gas distribution lining is of a disc structure;
the spray upper plate is of a disc structure;
the spraying lower plate is of a disc structure.
In one embodiment, the shower upper plate, the gas distribution liner and the shower lower plate are detachably connected.
According to the spraying device with the multiple airflow channels, the two reaction source gases enter through the independent flow channels and do not meet before entering the reaction area, and meanwhile, the effect of uniformly distributing the gases can be achieved.
Drawings
The above and other features, properties and advantages of the present invention will become more apparent from the following description of the embodiments with reference to the accompanying drawings in which like reference numerals denote like features throughout the several views, wherein:
FIG. 1 discloses a cross-sectional view of a multi-flow channel shower in accordance with an embodiment of the present invention;
FIG. 2 illustrates a close-up view of a multi-flow channel shower in accordance with an embodiment of the present invention;
FIG. 3a discloses a perspective view of an upper plate of a shower according to an embodiment of the present invention;
FIG. 3b discloses a partial cross-sectional view of an upper plate of a shower according to an embodiment of the present invention;
FIG. 4a discloses a perspective view of a gas distribution liner according to an embodiment of the present invention;
FIG. 4b discloses an enlarged view of a central portion of the gas distribution insert according to an embodiment of the present invention;
FIG. 5a discloses a bottom view of a gas distribution liner according to an embodiment of the present invention;
FIG. 5b discloses an enlarged partial edge view of the gas distribution liner according to an embodiment of the present invention;
FIG. 6a discloses a cross-sectional schematic view of a purge passage according to an embodiment of the invention;
FIG. 6b discloses a close-up view of a purge passage according to an embodiment of the invention.
The meanings of the reference symbols in the figures are as follows:
10, spraying the upper plate;
11 a first air inlet;
12 a second air inlet;
20-minute air bushing;
21 a first gas distribution channel;
22 an annular flow passage;
221 an inclined hole;
23, a diversion trench;
24 purge path;
25, a gas guide groove;
30 spraying the lower plate;
a 40 minute gas baffle;
41 through holes.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and do not limit the invention.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
Fig. 1 and 2 respectively show a sectional view and a partially enlarged view of a multi-flow channel shower apparatus according to an embodiment of the present invention, and as shown in fig. 1 and 2, the multi-flow channel shower apparatus according to the present invention includes a shower upper plate 10, a gas distribution liner 20, and a shower lower plate 30.
The upper spray plate 10 is provided with two independent air inlets into which two kinds of reaction source gases are respectively introduced;
the gas distribution bush 20 is used for merging the two reaction source gases and then conducting flow guiding distribution;
the lower plate 30 is sprayed, and two kinds of reaction source gases which are guided and distributed by the gas distribution bush 20 are sprayed into the reaction space.
Fig. 3a and 3b respectively show a perspective view and a partial cross-sectional view of a shower upper plate according to an embodiment of the present invention, and as shown in fig. 2 to 3b, the shower upper plate 10 is provided with a first gas inlet 11 and a second gas inlet 12, which are independently accessible to two kinds of reactant source gases.
The first gas inlet 11 is positioned at the central axis position and is used for introducing a first reaction source gas;
the second gas inlet 12 is directed toward the central axis in a downward slant direction, and is used for introducing a second precursor gas.
In the present embodiment, the number of the second air inlets 12 is one, but in other embodiments, the second air inlets 12 may be plural, each being distributed obliquely downward around the central axis.
Fig. 4a and 4b respectively show a schematic perspective view and a partially enlarged central view of a gas distribution sleeve according to an embodiment of the present invention, and as shown in fig. 2, 4a and 4b, the gas distribution sleeve 20 has an input end connected to the upper shower plate 10, receives the reactant source gas input from the upper shower plate 10, and has an output end connected to the lower shower plate 30, and outputs the uniformly distributed reactant source gas;
the gas distribution bush 20 is provided at a central axis position thereof with a first gas distribution passage 21 connected to the first gas inlet 11 for receiving the first precursor gas.
The gas distribution bush 20 is provided at an edge position, i.e., within a certain length from the central axis, with an annular flow passage 22 connected to the second gas inlet 12 to receive the second reactant source gas.
The annular arrangement of the annular flow passage 22 enables all of the second gas inlets 12 to be received even if there are a plurality of second gas inlets 12.
The gas distribution liner 20 is internally provided with a plurality of flow guide grooves 23, so that the second reaction gas entering from the edge can be better guided to be distributed to the periphery;
the bottom of the annular flow passage 22 is provided with a plurality of inclined holes 221, and the inclined holes 221 are connected with the flow guide groove 23 to distribute the introduced second precursor gas toward the periphery.
The plurality of inclined holes 221 have different diameters.
The diameter of the inclined hole may be changed according to actual design requirements, and is not necessarily the same.
Fig. 5a shows a schematic bottom view of a gas distribution liner according to an embodiment of the present invention, and as shown in fig. 1, fig. 2 and fig. 5a, the spraying device with multiple gas flow channels according to the present invention further includes a gas distribution baffle 40, and the gas is mixed from the gas distribution baffle 40.
The gas distribution baffle 40 is disposed at the bottom of the gas distribution liner 20 near the central axis and inside the gas outlet of the inclined hole 221, and guides the second precursor gas concentrated at the central axis to the periphery after blocking.
The gas distribution baffle 40 is provided with a plurality of through holes 41 at the bottom thereof, and performs circumferential flow guiding distribution on the inflowing first reactant source gas and second reactant source gas.
Fig. 6a and 6b respectively disclose a schematic cross-sectional view and a partially enlarged view of a purge passage according to an embodiment of the present invention, and as shown in fig. 6a and 6b, the multi-flow-channel shower apparatus according to the present invention further includes a purge passage 24:
the purge passage 24 is provided at an edge of the gas distribution liner 20.
Fig. 5a and 5b show a schematic bottom view and a partially enlarged edge view of an air distribution sleeve according to an embodiment of the present invention, and the edge of the upper surface of the air distribution sleeve 20 is provided with an air guide groove 25.
The upper spray plate 10, the gas distribution lining 20 and the lower spray plate 30 are disc structures.
The purging gas enters between the upper plate and the gas distribution lining 20 from the inlet on the upper side of the spraying upper plate 10, and the gas distribution lining 20 is purged through the purging passage 24, so that the process gas can be prevented from entering the slit of the gas distribution lining 20, the deposition in the small slit is prevented, and the service life of the part is prolonged.
Further, the spray device with multiple air flow channels according to the present invention is provided with a spray upper plate 10, an air distribution sleeve 20 and a spray lower plate 30 which are detachably connected.
The upper spray plate 10, the gas distribution lining 20, the lower spray plate 30 and the parts in the cavity are all detachable, so that the maintainability of the device is improved.
Furthermore, the spraying device with the multiple air flow channels does not have any screw in the area which can be contacted by the process gas, and the generation of granular byproducts is reduced.
According to the spraying device with the multiple airflow channels, the two reaction source gases enter through the independent flow channels and do not meet before entering the reaction area, and meanwhile, the effect of uniformly distributing the gases can be achieved.
As used in this application and the appended claims, the terms "a," "an," "the," and/or "the" are not intended to be inclusive in the singular, but rather are intended to be inclusive in the plural unless the context clearly dictates otherwise. In general, the terms "comprises" and "comprising" merely indicate that steps and elements are included which are explicitly identified, that the steps and elements do not form an exclusive list, and that a method or apparatus may include other steps or elements.
In the description of the present invention, it should be noted that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention.
In the present invention, unless expressly stated or limited otherwise, the recitation of a first feature "on" or "under" a second feature may include the recitation of the first and second features being in direct contact, and may also include the recitation that the first and second features are not in direct contact, but are in contact via another feature between them. Also, the first feature "on," "above" and "over" the second feature may include the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is at a higher level than the second feature. "beneath," "under" and "beneath" a first feature includes the first feature being directly beneath and obliquely beneath the second feature, or simply indicating that the first feature is at a lesser elevation than the second feature.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; may be directly connected or indirectly connected through intervening agents, or may be internally connected to the two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The embodiments described above are provided to enable persons skilled in the art to make or use the invention and that modifications or variations can be made to the embodiments described above by persons skilled in the art without departing from the inventive concept of the present invention, so that the scope of protection of the present invention is not limited by the embodiments described above but should be accorded the widest scope consistent with the innovative features set forth in the claims.
Claims (9)
1. The utility model provides a spray set of many gas flow channels which characterized in that, includes the shower upper plate, divides the gas bush and sprays the hypoplastron:
the spraying upper plate is provided with a first air inlet and a second air inlet;
the first gas inlet is positioned at the position of the central shaft and is used for introducing a first reaction source gas;
the second gas inlet is obliquely and downwards directed to the central axis direction and is used for introducing a second reaction source gas;
the input end of the gas distribution lining is connected with the upper spraying plate, and the output end of the gas distribution lining is connected with the lower spraying plate;
a first gas distribution channel is arranged at the central shaft position of the gas distribution lining, is connected with the first gas inlet and receives a first reaction source gas;
the edge position of the gas distribution lining is provided with an annular flow channel which is connected with a second gas inlet and used for receiving a second reaction source gas;
the lower spraying plate is used for spraying two reaction source gases guided by the gas distribution lining into the reaction space.
2. The multi-flow channel spray device of claim 1, wherein the gas distribution liner is provided with a plurality of guide grooves therein;
the bottom of the annular flow passage of the gas distribution lining is provided with a plurality of inclined holes, and the inclined holes are connected with the diversion trenches.
3. The multiple gas flow channel shower device as claimed in claim 2, wherein the plurality of angled holes are of different diametral dimensions.
4. The multi-gas-flow-channel spraying device as claimed in claim 2, further comprising a gas distribution baffle plate disposed at the bottom of the gas distribution sleeve near the central axis and located inside the gas outlets of the inclined holes, for guiding the second reactant source gas to the periphery after blocking.
5. The multi-gas-flow-channel spraying device as claimed in claim 4, wherein the gas distribution baffle is provided with a plurality of through holes at the bottom thereof, and is used for conducting circumferential flow guiding distribution on the inflowing first reactant source gas and second reactant source gas.
6. The multiple gas flow path shower device as claimed in claim 1, further comprising a purge passage provided at an edge of the gas distribution liner.
7. The multiple gas flow path showering device of claim 6, wherein said gas distribution liner has gas guide grooves formed in the edges of the upper surface thereof.
8. The multiple gas flow path sparger device of claim 1 wherein said gas distribution liner is a disk structure;
the spray upper plate is of a disc structure;
the spraying lower plate is of a disc structure.
9. The multiple gas flow channel shower device as claimed in claim 1, wherein the shower upper plate, the gas distribution liner and the shower lower plate are detachably connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211329081.0A CN115505904B (en) | 2022-10-27 | 2022-10-27 | Spray set of many air current passageway |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211329081.0A CN115505904B (en) | 2022-10-27 | 2022-10-27 | Spray set of many air current passageway |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115505904A true CN115505904A (en) | 2022-12-23 |
| CN115505904B CN115505904B (en) | 2023-11-24 |
Family
ID=84512396
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211329081.0A Active CN115505904B (en) | 2022-10-27 | 2022-10-27 | Spray set of many air current passageway |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115505904B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115852341A (en) * | 2022-12-23 | 2023-03-28 | 拓荆科技股份有限公司 | Flow guide device in semiconductor spray plate |
| CN115896751A (en) * | 2023-01-30 | 2023-04-04 | 拓荆科技(上海)有限公司 | Cavity-divided spray plate |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040216668A1 (en) * | 2003-04-29 | 2004-11-04 | Sven Lindfors | Showerhead assembly and ALD methods |
| CN104120410A (en) * | 2013-04-27 | 2014-10-29 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction cavity and plasma processing equipment |
| CN104183523A (en) * | 2014-07-30 | 2014-12-03 | 沈阳拓荆科技有限公司 | Isolated spraying device of two types of gases |
| CN104178749A (en) * | 2014-07-30 | 2014-12-03 | 沈阳拓荆科技有限公司 | Two-gas isolate type central uniform gas dividing and spraying device |
| CN104195525A (en) * | 2014-08-15 | 2014-12-10 | 沈阳拓荆科技有限公司 | Independent and uniform air injection spraying device by two gases |
| CN105132889A (en) * | 2015-09-14 | 2015-12-09 | 沈阳拓荆科技有限公司 | Double gas circuit center gas intake structure applied to spray head of thin film deposition device |
| US20150368799A1 (en) * | 2014-06-18 | 2015-12-24 | Advanced Micro-Fabrication Equipment Inc, Shanghai | Gas shower device, chemical vapor deposition device and method |
| US20210040616A1 (en) * | 2019-08-06 | 2021-02-11 | Samsung Electronics Co., Ltd. | Shower head and substrate treating apparatus having the same |
| CN215481420U (en) * | 2021-09-07 | 2022-01-11 | 深圳市纳设智能装备有限公司 | Air inlet spraying assembly and air inlet spraying equipment |
| CN115058702A (en) * | 2022-07-27 | 2022-09-16 | 拓荆科技(上海)有限公司 | Spray header and vacuum treatment equipment |
-
2022
- 2022-10-27 CN CN202211329081.0A patent/CN115505904B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040216668A1 (en) * | 2003-04-29 | 2004-11-04 | Sven Lindfors | Showerhead assembly and ALD methods |
| CN104120410A (en) * | 2013-04-27 | 2014-10-29 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction cavity and plasma processing equipment |
| US20150368799A1 (en) * | 2014-06-18 | 2015-12-24 | Advanced Micro-Fabrication Equipment Inc, Shanghai | Gas shower device, chemical vapor deposition device and method |
| CN104183523A (en) * | 2014-07-30 | 2014-12-03 | 沈阳拓荆科技有限公司 | Isolated spraying device of two types of gases |
| CN104178749A (en) * | 2014-07-30 | 2014-12-03 | 沈阳拓荆科技有限公司 | Two-gas isolate type central uniform gas dividing and spraying device |
| CN104195525A (en) * | 2014-08-15 | 2014-12-10 | 沈阳拓荆科技有限公司 | Independent and uniform air injection spraying device by two gases |
| CN105132889A (en) * | 2015-09-14 | 2015-12-09 | 沈阳拓荆科技有限公司 | Double gas circuit center gas intake structure applied to spray head of thin film deposition device |
| US20210040616A1 (en) * | 2019-08-06 | 2021-02-11 | Samsung Electronics Co., Ltd. | Shower head and substrate treating apparatus having the same |
| CN215481420U (en) * | 2021-09-07 | 2022-01-11 | 深圳市纳设智能装备有限公司 | Air inlet spraying assembly and air inlet spraying equipment |
| CN115058702A (en) * | 2022-07-27 | 2022-09-16 | 拓荆科技(上海)有限公司 | Spray header and vacuum treatment equipment |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115852341A (en) * | 2022-12-23 | 2023-03-28 | 拓荆科技股份有限公司 | Flow guide device in semiconductor spray plate |
| CN115896751A (en) * | 2023-01-30 | 2023-04-04 | 拓荆科技(上海)有限公司 | Cavity-divided spray plate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115505904B (en) | 2023-11-24 |
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