CN115354303B

CN115354303B - Reaction chamber device

Info

Publication number: CN115354303B
Application number: CN202211023141.6A
Authority: CN
Inventors: 杨华龙; 刘振; 金基烈; 吴凤丽
Original assignee: Tuojing Technology Shanghai Co ltd
Current assignee: Tuojing Technology Shanghai Co ltd
Priority date: 2022-08-25
Filing date: 2022-08-25
Publication date: 2024-01-19
Anticipated expiration: 2042-08-25
Also published as: CN115354303A

Abstract

The invention provides a reaction cavity device, which comprises a cavity, a bushing, a purging channel and an exhaust channel, wherein the bushing is arranged on the cavity; the bushing is arranged on the inner wall of the chamber, and a purging cavity is formed between the bushing and the inner wall of the chamber; a drainage channel is arranged between the inner wall of the chamber and the bushing, and the drainage channel is used for guiding the purge gas to flow in the purge cavity; the groove on the outer wall of the bushing is used for guiding the purge gas to be filled in the purge cavity rapidly and uniformly, so that the flow uniformity of the purge gas in the purge cavity is improved, the reaction gas and reaction products in the purge cavity are discharged out of the equipment through the exhaust channel, the granularity performance of the inside of the reaction cavity device is improved, and the film deposition quality is improved.

Description

Reaction chamber device

Technical Field

The invention relates to the technical field of semiconductor manufacturing, in particular to a reaction cavity device.

Background

Atomic layer deposition is a process by which substances can be plated onto a substrate surface layer by layer in the form of monoatomic films. Atomic layer deposition is similar to common chemical deposition. However, during atomic layer deposition, the chemical reaction of a new atomic layer is directly related to the previous layer in such a way that only one atomic layer is deposited per reaction. And purging the reaction cavity by using purge gas between the alternative introduction of different reaction gases to remove excessive reaction gases and reaction products which are not adsorbed on the surface of the wafer so as to ensure that chemical reactions only occur on the surface of the wafer.

In the prior art, in order to maintain the temperature in the reaction chamber within a desired target temperature range, a liner is disposed in the reaction chamber or in a channel communicating with the reaction chamber to prevent heat dissipation. At this time, when the reaction cavity and the channel are purged, it is difficult to purge the reaction gas and the reaction products in the gap between the inner wall of the reaction cavity or the inner wall of the channel and the lining, so that the granularity in the cavity is too high, and the film deposition quality is affected.

Therefore, there is a need to develop a novel reaction chamber apparatus to avoid some of the above problems in the prior art.

Disclosure of Invention

The invention aims to provide a reaction cavity device which can reduce granularity in a cavity and improve film deposition quality.

In order to achieve the above object, the present invention provides a reaction chamber device comprising: a chamber, a liner, a purge passage, and an exhaust passage; the bushing is arranged on the inner wall of the chamber, and a purging cavity is formed between the bushing and the inner wall of the chamber; a drainage channel is arranged between the inner wall of the chamber and the bushing, and the drainage channel is used for guiding the purge gas to flow in the purge cavity; the purging channel, the exhaust channel and the purging cavity are mutually communicated, so that purging gas is input into the purging cavity through the purging channel for purging and is discharged from the exhaust channel.

The reaction cavity device provided by the invention has the beneficial effects that: the blowing channel is used for forming a blowing cavity between the liner and the inner wall of the chamber to convey blowing gas, the blowing cavity is guided to be filled with the blowing gas rapidly and uniformly through the drainage channel arranged between the inner wall of the chamber and the liner, the flow uniformity of the blowing gas in the blowing cavity is improved, the reaction gas and reaction products in the blowing cavity are discharged out of the equipment through the exhaust channel, the granularity performance inside the reaction cavity device is improved, and the film deposition quality is improved.

Optionally, a groove is formed on the outer wall of the liner, and a drainage channel is formed between the groove and the inner wall of the chamber to guide the purge gas to flow along the extending direction of the groove.

Optionally, a groove is formed on the inner wall of the chamber, and a drainage channel is formed between the groove and the liner, so as to guide the purge gas to flow along the extending direction of the groove.

Optionally, the purging cavity includes a first purging cavity, the cavity includes a sheet transferring cavity, the liner is disposed in the sheet transferring cavity, and the first purging cavity is formed between a side wall of the liner and an inner wall of the sheet transferring cavity. The beneficial effects are that: the method is beneficial to discharging the reaction gas and the reaction product in the first purging cavity between the lining and the sheet conveying cavity, improves the granularity performance in the sheet conveying cavity and improves the film deposition quality.

Optionally, the extending direction of the groove is perpendicular to the axial direction of the bushing. The beneficial effects are that: the blowing gas is convenient to flow on the outer wall of the same axial position of the bushing, and the uniformity of the blowing effect of the bushing at the positions in multiple directions is improved.

Optionally, the groove surrounds a sidewall of the bushing. The beneficial effects are that: the blowing gas can flow around the bushing, and the uniformity of the blowing effect of all positions around the bushing is improved.

Optionally, a purge hole is provided in the groove. The beneficial effects are that: and after the purge gas flows along the outer wall of the bushing, the purge gas enters the bushing to purge the inside of the bushing.

Optionally, the purge holes are arranged at equal intervals along the extending direction of the groove. The beneficial effects are that: the air flow uniformly flows into the inside of the lining, and the purging uniformity of the inside of the lining is improved.

Optionally, the purging cavity includes a second purging cavity, the chamber includes a deposition chamber, the liner is disposed in the deposition chamber, and the second purging cavity is formed between the liner and an inner wall of the deposition chamber. The beneficial effects are that: the method is beneficial to exhausting the reaction gas and the reaction product in the second purging cavity between the lining and the deposition cavity, improves the granularity performance in the deposition cavity and improves the film deposition quality.

Optionally, the second purging cavity includes a bottom purging cavity and a side purging cavity, the liner includes a bottom wall and an annular sidewall disposed on the bottom wall, the bottom wall and the annular sidewall respectively form with the inner wall of the deposition chamber the bottom purging cavity and the side purging cavity.

Optionally, the groove is disposed on the bottom wall. The beneficial effects are that: the bottom purging uniformity in the bottom purging cavity is improved.

Optionally, the recess extends from the bottom wall to the annular side wall. The beneficial effects are that: the bottom purge cavity and the side purge cavity are beneficial to improving the purge uniformity of the bottom purge cavity and the side purge cavity.

Optionally, the groove is annular, rectangular or triangular on the bottom wall. The bottom purging device is beneficial to improving the purging uniformity at each position in the bottom purging cavity.

Optionally, the purge channel includes an air outlet for outputting purge gas, and the purge hole is located on a side away from the air outlet. The beneficial effects are that: the realization purge gas winds the bush outer wall flows the back reentrant inside the bush a week, is favorable to avoiding gas direct entering inside the bush, influences the homogeneity of each position purge effect in clearance, reinforcing the purge effect in clearance.

Optionally, the purge channel includes a gas outlet for outputting purge gas, and the gas outlet is disposed on an inner wall of the chamber and opposite to the drainage channel. The beneficial effects are that: the flow of the purge gas along the grooves is facilitated, and the uniformity of purging of the purge gas in the gaps is improved.

Optionally, the shape of the air outlet is annular. The beneficial effects are that: the area of the air outlet is increased, the conveying amount of the purge gas in unit time is improved, and meanwhile, the annular air outlet is beneficial to improving the uniformity of conveying the purge gas in the area covered by the bushing.

Optionally, the reaction chamber device further comprises a gas distribution plate, the gas distribution plate is arranged at the gas outlet, and gas distribution holes arranged along the circumferential direction are formed in the gas distribution plate. The beneficial effects are that: the conveying static pressure of the purge gas is increased, and the stable airflow promotes the uniformity of purging in the circumferential direction of the air outlet.

Optionally, the purge channel further includes an air inlet, the air inlet is communicated with an external air source, and a distance between adjacent air distribution holes is larger at a position close to the air inlet than at a position far from the air inlet. The beneficial effects are that: the flow rate of the purge gas near the gas inlet is higher, and the flow rate of the purge gas far away from the gas inlet is lower; when the interval between the gas distribution holes close to the gas inlet is larger, the resistance of the flow of the purge gas is larger, and when the interval between the gas distribution holes far away from the gas inlet is smaller, the resistance of the flow of the purge gas is smaller, and finally the uniformity of the flow of the purge gas at each position of the gas outlet is improved.

Optionally, the bushing is in point contact with the inner wall of the chamber. The beneficial effects are that: the point contact is favorable for increasing the gap between the bushing and the inner wall of the cavity, the heat preservation effect of the bushing is improved, meanwhile, the mobility of the purge gas in the gap is improved, and the purge effect is enhanced.

Drawings

FIG. 1 is a schematic view of a reaction chamber device according to an embodiment of the present invention;

FIG. 2 is a schematic cross-sectional view of the deposition chamber shown in FIG. 1;

FIG. 3 is a schematic view of a bushing according to a first embodiment of the present invention;

FIG. 4 is a schematic view of a bushing according to a second embodiment of the invention;

FIG. 5 is a schematic view of a bushing according to a third embodiment of the invention;

FIG. 6 is a schematic cross-sectional view of the transfer chamber shown in FIG. 1;

fig. 7 is a schematic view of the structure at the outlet position shown in fig. 2.

Detailed Description

For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention. Unless otherwise defined, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. As used herein, the word "comprising" and the like means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof without precluding other elements or items.

In order to solve the problems in the prior art, the embodiment of the invention provides a reaction cavity device.

In some embodiments of the present invention, a drainage channel is provided between the inner wall of the chamber and the liner, and the drainage channel is used for guiding the purge gas to flow in the purge cavity.

In some embodiments of the present invention, a groove is provided on an outer wall of the liner, and the drainage channel is formed between the groove and an inner wall of the chamber, so as to guide the purge gas to flow along an extension direction of the groove.

In other embodiments of the present invention, a groove is provided on the inner wall of the chamber, and the drainage channel is formed between the groove and the liner, so as to guide the purge gas to flow along the extending direction of the groove.

FIG. 1 is a schematic structural view of a reaction chamber device according to an embodiment of the present invention.

FIG. 2 is a schematic cross-sectional view of the reaction chamber apparatus shown in FIG. 1.

Fig. 3 is a schematic structural view of a bushing according to a first embodiment of the present invention.

In some embodiments of the present invention, referring to fig. 1, the reaction chamber device shown in fig. 1 includes a chamber and an exhaust channel 8, where the chamber includes a deposition chamber 1, a transfer chamber 2, and an exhaust chamber 3, and the deposition chamber 1, the transfer chamber 2, and the exhaust chamber 3 are mutually communicated; the exhaust passage 8 communicates with the deposition chamber 1 through an exhaust hole 81.

In some embodiments of the present invention, referring to fig. 2 and 3, the reaction chamber device includes a deposition chamber 1, a liner 4, a purge channel 5, and an exhaust channel 8, where the liner 4 is disposed in the deposition chamber 1, and the second purge cavity is formed between the liner 4 and an inner wall of the deposition chamber 1; a groove 41 is formed on the outer wall of the liner 4, and a drainage channel for guiding the gas to flow is formed between the groove 41 and the inner wall of the deposition chamber 1, so that the purge gas is guided to flow along the extending direction of the groove 41; the purge channel 5 is disposed at the bottom of the deposition chamber 1 and is communicated with the second purge cavity, so that the purge gas flows into the deposition chamber 1 after entering the second purge cavity from the purge channel 5, and is finally discharged into the exhaust channel 8 through the exhaust hole 81.

In some embodiments of the present invention, referring to fig. 2 and 3, the liner 4 is disposed in the deposition chamber 1, the liner 4 includes a bottom wall 62 and an annular side wall 63, the bottom wall 62 and a bottom surface of the deposition chamber 1 form a bottom purging cavity, the annular side wall 63 and a side surface of the deposition chamber 1 form a side purging cavity, the side purging cavity and the bottom purging cavity are communicated with each other, the purging channel 5 is disposed at the bottom of the deposition chamber 1, so that a purging gas flows from the purging channel 5, flows through the bottom purging cavity and the side purging cavity in sequence, is guided by the groove 41, and flows into the deposition chamber 1 after the purging of the side purging cavity and the bottom purging cavity is completed more quickly and uniformly, and is finally discharged into the exhaust channel 8 through the exhaust hole 81.

In some embodiments of the present invention, referring to fig. 2, the purge channel 5 includes a gas outlet 51, the gas outlet 51 is used for supplying purge gas into the second purge cavity formed between the liner 4 and the inner wall of the deposition chamber 1, and the gas outlet 51 is located on the bottom surface of the deposition chamber 1.

In some embodiments of the present invention, referring to fig. 3, the groove 41 is provided on the bottom wall 62 of the liner 4, and the purge gas is guided by the groove 41 to more rapidly and uniformly purge the bottom purge chamber.

In some embodiments of the present invention, referring to fig. 3, the groove 41 extends from the bottom wall 62 to the annular side wall 63, so that the purge gas flows into the side purge cavity more quickly after filling the bottom purge cavity under the guidance of the groove 41, and the purge uniformity of the bottom purge cavity and the side purge cavity is improved.

Fig. 4 is a schematic structural view of a bushing according to a second embodiment of the present invention.

In some embodiments of the present invention, referring to fig. 4, the recess 41 is rectangular in shape.

In other embodiments of the present invention, the recess 41 is formed in a triangular shape or a ring shape, and the present invention is not limited thereto.

fig. 6 is a schematic cross-sectional view of the transfer chamber shown in fig. 1.

In some embodiments of the present invention, referring to fig. 1, 5 and 6, the liner 4 is disposed in the sheet transferring chamber 2 (not shown in the drawings) 1, and the first purge cavity is formed between the liner 4 and the inner wall of the sheet transferring chamber 2; a groove 41 is formed in the outer wall of the bushing 4, a drainage channel for guiding gas flow is formed between the groove 41 and the inner wall of the plate conveying chamber 2, and purge gas is guided to flow along the extending direction of the groove 41; the purge channel 5 is disposed at the bottom of the wafer transferring chamber 2 and is communicated with the first purge cavity, so that purge gas flows into the deposition chamber 1 from the purge channel 5 after entering the first purge cavity along the direction opposite to the direction shown in a, and is finally discharged into the exhaust channel 8 through the exhaust hole 81.

In some embodiments of the present invention, referring to fig. 5 and 6, the extending direction of the groove 41, i.e. the direction shown in the drawing B, is perpendicular to the extending direction of the sheet transferring chamber 2, i.e. the direction shown in the drawing a.

In some embodiments of the present invention, the cross-section of the bushing 4 is rectangular, and has four outer contour surfaces, and the groove 41 is disposed on one of the four outer contour surfaces.

In some embodiments of the present invention, the groove 41 is disposed on one of the four outer contour surfaces and extends to two adjacent outer contour surfaces.

In some embodiments of the invention, referring to fig. 5, the groove 41 surrounds the outer wall of the bushing 4, i.e. the groove 41 extends over the outer wall of the bushing 4 and surrounds the outer wall of the bushing 4 for a circle.

In some embodiments of the present invention, the liner 4 is in point contact with the inner walls of the deposition chamber 1, the sheet-transferring chamber 2 and the pumping chamber 3, so that the space sizes of the first purging cavity and the second purging cavity are increased, the heat preservation effect of the liner 4 is improved, the mobility of the purging gas in the gap is improved, and the purging effect is enhanced.

In some embodiments of the present invention, the point contact may be a protrusion formed on the surface of the liner 4 from the center to the outside through a machining process, the protrusions are equally spaced along the outer wall of the liner 4, and the protrusions are respectively abutted against the inner walls of the deposition chamber 1, the transfer chamber 2 and the pumping chamber 3.

In other embodiments of the present invention, the point contact connection may be implemented by a connection member, where the connection member is disposed on the outer contour surface of the liner 4 by a detachable connection manner such as a threaded connection or a non-detachable connection manner such as a welded connection or a rivet connection, and is connected to the inner walls of the deposition chamber 1, the sheet transfer chamber 2 and the pumping chamber 3, respectively.

In some embodiments of the present invention, referring to fig. 5 and 6, the groove 41 is provided with a purge hole 72, and after the purge gas enters the first purge cavity formed between the inner wall of the wafer transferring chamber 2 and the liner 4 through the purge channel 5 to purge, part of the purge gas flows into the inner side of the liner 4 through the purge hole 72, and purges the reaction gas and the reaction product inside the liner 4 out of the apparatus, which is beneficial to improving the granularity performance inside the reaction cavity device and improving the film deposition quality.

In some embodiments of the present invention, the purge hole 72 is a bar hole, and the bar hole is disposed at the bottom surface of the groove 41.

In some embodiments of the present invention, referring to fig. 5, the purge holes 72 are small-bore circular holes, and a plurality of purge holes 72 are disposed on the bottom surface of the recess 41.

In other embodiments of the present invention, the purge holes 72 are provided at both the bottom and side surfaces of the recess 41.

In some embodiments of the present invention, referring to fig. 5, the purge holes 72 are arranged at equal intervals along the extending direction of the groove 41, that is, the center distances of adjacent purge holes 72 are equal, so that the air flow of the purge gas entering the liner 4 at each position in the extending direction of the groove 41 is approximately equal, and the purge gas can flow into the liner 4 uniformly, so as to improve the uniformity of purging in the liner 4.

In some embodiments of the present invention, referring to fig. 6, the liner 4 is disposed in the sheet conveying chamber 2, the purge channel 5 is disposed at the bottom of the sheet conveying chamber 2, and at this time, the air outlet 51 corresponds to the position of the groove 41, so that the purge gas directly enters the area where the groove 41 is located through the purge channel 5, and the first purge cavity is uniformly purged under the guidance of the groove 41.

In some embodiments of the present invention, referring to fig. 5 and 6, the liner 4 is disposed in the tablet chamber 2, the air outlet 51 of the purge channel 5 is disposed at the bottom of the tablet chamber 2, and at this time, the purge hole 72 is disposed at a side of the groove 41 away from the air outlet 51, that is, the purge hole 72 is disposed in the groove near the top side of the tablet chamber 2; because particles accumulate under gravity at the bottom of the liner 41, in these embodiments, purge gas flows into the liner 41 from the top of the liner 41, allowing the bottom accumulated particles to be purged directly out of the liner 41; the purge gas is prevented from flowing in from the bottom of the liner 41, and particles accumulated at the bottom of the liner 41 are raised again, so that the purge effect is affected.

Specifically, referring to fig. 5 and 6, the cross-section of the bushing 4 is rectangular and has four outer contour surfaces, the groove 41 surrounds the outer wall of the bushing 4, that is, the groove 41 extends on the four outer contour surfaces of the bushing 4 and surrounds the outer wall of the bushing 4 for a circle, and when the air outlet 51 of the purge passage 5 is disposed opposite to a first outer contour surface of the four outer contour surfaces, the purge hole 72 is disposed in the groove 41 on a second outer contour surface, and the orientation of the first outer contour surface is opposite to the second outer contour surface; enabling purge gas to enter a region between the first contour surface and the inner wall of the wafer conveying chamber 2 for purging; then, after being guided by the grooves 41, part of the purge gas flows through the area between the other two profile surfaces adjacent to the first profile surface and the inner wall of the wafer conveying chamber 2 for purging; after that, part of the purge gas is guided by the groove 41 and then flows through the area between the second contour surface 82 and the inner wall of the wafer conveying chamber 2 for purging; finally, part of the purge gas passes through the purge holes 72 and enters the liner 4 to purge, so that the purge gas flows around the outer wall of the liner 4 for a week and then enters the liner 4, and the gas is prevented from directly entering the liner 4, and the uniformity of the purge effect in the first purge cavity is influenced.

In some embodiments of the present invention, projections of the grooves 41 on the inner walls of the deposition chamber 1, the slide transfer chamber 2 and the pumping chamber 3 cover the air outlets 51 of the purge channel 5.

Fig. 7 is a schematic view of the structure of the air outlet shown in fig. 2.

In some embodiments of the present invention, referring to fig. 7, the shape of the gas outlet 51 is annular, which is beneficial to increasing the input area of the purge gas.

In other embodiments of the present invention, the shape of the air outlet 51 may be a hollow polygon, such as a hollow triangle or a hollow rectangle, but the present invention is not limited thereto.

In some embodiments of the present invention, referring to fig. 7, the reaction chamber apparatus (not labeled in the drawings) further includes a gas distribution plate 52, the gas distribution plate 52 is annular in shape, gas distribution holes 53 arranged along a circumferential direction with a center of the gas outlet 51 as a center are provided on the gas distribution plate 52, and the gas distribution plate 52 is sealingly mounted at a position of the gas outlet 51, so that purge gas does not flow out from the gas outlet 51, but flows into a second purge chamber formed between the liner 4 and an inner wall of the deposition chamber 1 through the gas distribution holes 53.

In some embodiments of the present invention, referring to fig. 7, the purge channel 5 further includes an air inlet 54, the air inlet 54 is communicated with an external air source, the distance between adjacent air distribution holes 53 is larger near the air inlet 54 than at a position far from the air inlet 54, the flow rate of the purge gas near the air inlet 54 is larger, and the flow rate of the purge gas far from the air inlet 54 is smaller; when the interval between the air distribution holes 53 close to the air inlet 54 is larger, the resistance of the purge gas flowing out is larger, when the interval between the air distribution holes 53 far away from the air inlet 54 is smaller, the resistance of the purge gas flowing out is smaller, and finally the uniformity of the flow of the purge gas among the air distribution holes 53 is improved; specifically, the distance between the adjacent air-distributing holes 53 is a distance in the circumferential direction with the center of the air outlet 51 as the center of the circle.

While embodiments of the present invention have been described in detail hereinabove, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. It is to be understood that such modifications and variations are within the scope and spirit of the present invention as set forth in the following claims. Moreover, the invention described herein is capable of other embodiments and of being practiced or of being carried out in various ways.

Claims

1. A reaction chamber arrangement comprising:

a chamber, a liner, a purge passage, and an exhaust passage; the bushing is arranged on the inner wall of the chamber, and a purging cavity is formed between the bushing and the inner wall of the chamber;

a drainage channel is arranged between the inner wall of the chamber and the bushing, and the drainage channel is used for guiding the purge gas to flow in the purge cavity;

the purging channel, the exhaust channel and the purging cavity are communicated with each other, so that purging gas is input into the purging cavity through the purging channel for purging and is discharged from the exhaust channel;

a groove is formed in the outer wall of the bushing, and a drainage channel is formed between the groove and the inner wall of the cavity to guide purge gas to flow along the extending direction of the groove;

the purging cavity comprises a first purging cavity, the cavity comprises a sheet conveying cavity, the bushing is arranged in the sheet conveying cavity, and the first purging cavity is formed between the side wall of the bushing and the inner wall of the sheet conveying cavity;

the extending direction of the groove is perpendicular to the axial direction of the bushing;

and a purging hole is arranged in the groove.

2. The reaction chamber apparatus according to claim 1, wherein a groove is provided on an inner wall of the chamber, and the drainage passage is formed between the groove and the liner to guide the purge gas to flow in an extending direction of the groove.

3. The reaction chamber arrangement of claim 2 wherein the groove surrounds a sidewall of the liner.

4. The reaction chamber apparatus of claim 1, wherein the purge holes are arranged at equal intervals along the extending direction of the groove.

5. The reaction chamber apparatus according to claim 1, wherein the purge passage includes an air outlet for outputting a purge gas, the purge hole being located on a side remote from the air outlet.

6. The reaction chamber arrangement of claim 1 wherein the purge chamber comprises a second purge chamber, the chamber comprising a deposition chamber, the liner disposed within the deposition chamber, the second purge chamber formed between the liner and an inner wall of the deposition chamber.

7. The reaction chamber arrangement of claim 6 wherein the second purge chamber comprises a bottom purge chamber and a side purge chamber, the liner comprising a bottom wall and an annular sidewall disposed to the bottom wall, the bottom wall and the annular sidewall forming the bottom purge chamber and the side purge chamber with the deposition chamber inner wall, respectively.

8. The reaction chamber arrangement of claim 7 wherein the recess is provided in the bottom wall.

9. The reaction chamber arrangement of claim 8 wherein the recess extends from the bottom wall to the annular side wall.

10. The reaction chamber arrangement of claim 7, wherein the recess is any one of annular, rectangular, or triangular in shape on the bottom wall.

11. The reaction chamber apparatus according to claim 1, wherein the purge passage includes an air outlet for outputting a purge gas, the air outlet being provided in an inner wall of the chamber and opposite to the drainage passage.

12. The reaction chamber arrangement of claim 11 wherein the gas outlet is annular in shape.

13. The reaction chamber apparatus according to claim 12, further comprising a gas distribution plate provided at the gas outlet, wherein gas distribution holes arranged in a circumferential direction are provided in the gas distribution plate, so that purge gas enters the purge chamber from the gas distribution holes.

14. The reaction chamber arrangement of claim 13 wherein the purge channel further comprises an air inlet communicating with an external air source, the spacing between adjacent gas distribution holes being greater near the air inlet than away from the air inlet.

15. The reaction chamber arrangement of claim 1 wherein the bushing is in point contact with the inner wall of the chamber.