CN115354303A

CN115354303A - Reaction chamber device

Info

Publication number: CN115354303A
Application number: CN202211023141.6A
Authority: CN
Inventors: 杨华龙; 刘振; 金基烈; 吴凤丽
Original assignee: Tuojing Technology Shanghai Co ltd
Current assignee: Tuojing Technology Shanghai Co ltd
Priority date: 2022-08-25
Filing date: 2022-08-25
Publication date: 2022-11-18
Anticipated expiration: 2042-08-25
Also published as: CN115354303B

Abstract

The invention provides a reaction cavity device, which comprises a cavity, a lining, a purging channel and an exhaust channel, wherein the lining is arranged on the cavity; the lining is arranged on the inner wall of the cavity, and a purging cavity is formed between the lining and the inner wall of the cavity; a drainage channel is arranged between the inner wall of the cavity and the lining and is used for guiding the purging gas to flow in the purging cavity; through set up in recess guide purge gas on the bush outer wall is quick and evenly be full of in the purge cavity, promote purge gas and be in the homogeneity that flows in the purge cavity will reactant gas and reaction products in the purge cavity pass through exhaust passage exhaust apparatus is favorable to improving the inside granularity performance of reaction chamber device, improves film deposition quality.

Description

Reaction chamber device

Technical Field

The invention relates to the technical field of semiconductor manufacturing, in particular to a reaction chamber device.

Background

Atomic layer deposition is a process by which a substance can be deposited as a monoatomic film, layer by layer, onto a substrate surface. Atomic layer deposition is similar to ordinary chemical deposition. However, in an atomic layer deposition process, the chemical reaction of a new atomic film is directly related to the previous one in such a way that only one layer of atoms is deposited per reaction. And purging the reaction cavity by using a purging gas between the alternate introduction of different reaction gases to remove the excess reaction gases and reaction products which are not adsorbed on the surface of the wafer so as to ensure that the chemical reaction only occurs on the surface of the wafer.

In order to maintain the temperature in the reaction chamber within a desired target temperature range, a bushing is disposed in the reaction chamber or a channel communicating with the reaction chamber in the prior art atomic layer deposition apparatus to prevent heat loss. When the reaction cavity and the channel are purged, the reaction gas and the reaction products in the gap between the inner wall of the reaction cavity or the inner wall of the channel and the lining are difficult to purge completely, so that the granularity in the cavity is too high, and the deposition quality of the film is influenced.

Therefore, there is a need to develop a new reaction chamber device to avoid the above problems in the prior art.

Disclosure of Invention

The invention aims to provide a reaction chamber device which can reduce the granularity in a chamber and improve the film deposition quality.

To achieve the above object, the present invention provides a reaction chamber device, comprising: a chamber, a liner, a purge passage, and an exhaust passage; the lining is arranged on the inner wall of the cavity, and a purging cavity is formed between the lining and the inner wall of the cavity; a drainage channel is arranged between the inner wall of the cavity and the lining and is used for guiding the purging gas to flow in the purging cavity; the purging channel, the exhaust channel and the purging cavity are communicated with one another, so that purging gas is input into the purging cavity through the purging channel to be purged and is exhausted from the exhaust channel.

The reaction chamber device provided by the invention has the beneficial effects that: the purging channel is used for forming a purging cavity between the lining and the inner wall of the cavity to convey purging gas, the purging cavity is filled with the purging gas quickly and uniformly through the drainage channel arranged between the inner wall of the cavity and the lining, the flowing uniformity of the purging gas in the purging cavity is improved, and the reaction gas and the reaction products in the purging cavity pass through the exhaust channel discharge equipment, so that the granularity performance in the reaction cavity device is improved, and the film deposition quality is improved.

Optionally, a groove is formed in the outer wall of the bushing, the drainage channel is formed between the groove and the inner wall of the cavity, and the purging gas is guided to flow along the extending direction of the groove.

Optionally, a groove is formed in the inner wall of the chamber, the drainage channel is formed between the groove and the bushing, and the purging gas is guided to flow along the extending direction of the groove.

Optionally, the blowing cavity includes a first blowing cavity, the cavity includes a sheet conveying cavity, the bushing is disposed in the sheet conveying cavity, and the first blowing cavity is formed between the side wall of the bushing and the inner wall of the sheet conveying cavity. The beneficial effects are that: the device is favorable for discharging the reaction gas and the reaction products in the first blowing cavity between the lining and the film transmission cavity, improves the granularity performance in the film transmission cavity and improves the film deposition quality.

Optionally, the extending direction of the groove is perpendicular to the axial direction of the bushing. The beneficial effects are that: the purging gas can flow on the outer wall of the same axial position of the lining conveniently, and the uniformity of the purging effect of the positions of the lining in multiple directions is improved.

Optionally, the recess surrounds a side wall of the bushing. The beneficial effects are that: the flow of the sweeping gas around the bushing is facilitated, and the uniformity of sweeping effects at all positions around the bushing is improved.

Optionally, a purge hole is provided in the groove. The beneficial effects are that: and after flowing along the outer wall of the lining, the purging gas enters the lining to purge the inside of the lining.

Optionally, the plurality of purge holes are arranged at equal intervals along the extending direction of the groove. The beneficial effects are that: the air flow is enabled to uniformly flow into the lining, and the sweeping uniformity in the lining is improved.

Optionally, the purge cavity includes a second purge cavity, the chamber includes a deposition chamber, the liner is disposed in the deposition chamber, and the second purge cavity is formed between the liner and an inner wall of the deposition chamber. The beneficial effects are that: the device is beneficial to discharging reaction gas and reaction products in a second purging cavity between the lining and the deposition cavity, improving the granularity performance in the deposition cavity and improving the film deposition quality.

Optionally, the second purging cavity includes a bottom purging cavity and a side purging cavity, the bushing includes a bottom wall and an annular sidewall disposed on the bottom wall, and the bottom wall and the annular sidewall form the bottom purging cavity and the side purging cavity with the inner wall of the deposition chamber, respectively.

Optionally, the groove is disposed on the bottom wall. The beneficial effects are that: the blowing uniformity in the bottom blowing cavity is improved.

Optionally, the groove extends from the bottom wall to the annular side wall. The beneficial effects are that: the purging uniformity of the bottom purging cavity and the side purging cavity is improved.

Optionally, the groove is annular, rectangular or triangular on the bottom wall. The blowing uniformity of each position in the bottom blowing cavity is improved.

Optionally, the purge passage includes a gas outlet for outputting purge gas, and the purge hole is located on a side away from the gas outlet. The beneficial effects are that: realize sweeping gas and wind reentrant behind the bush outer wall flow a week inside the bush, be favorable to avoiding gaseous direct entering inside the bush, influence each position in clearance sweeps the homogeneity of effect, strengthens the effect of sweeping in clearance.

Optionally, the purging channel includes a gas outlet for outputting purging gas, and the gas outlet is disposed on the inner wall of the cavity and opposite to the drainage channel. The beneficial effects are that: the flow of the purging gas along the groove is facilitated, and the purging uniformity of the purging gas in the gap is improved.

Optionally, the air outlet is annular in shape. The beneficial effects are that: the area of the gas outlet is increased, the conveying amount of the sweeping gas in unit time is increased, and meanwhile, the annular gas outlet is beneficial to improving the conveying uniformity of the sweeping gas in the area covered by the lining.

Optionally, the reaction chamber device further comprises a gas distribution plate, the gas distribution plate is arranged at the gas outlet, and gas distribution holes arranged along the circumferential direction are formed in the gas distribution plate. The beneficial effects are that: the static pressure of the conveying of the blowing gas is increased, the airflow is stabilized, and the blowing uniformity in the circumferential direction of the gas outlet is improved.

Optionally, the purge passage further includes an air inlet, the air inlet communicates with an external air source, and a distance between adjacent air distribution holes is greater at a position close to the air inlet than at a position far away from the air inlet. The beneficial effects are that: the flow rate of the purge gas close to the gas inlet is larger, and the flow rate of the purge gas far away from the gas inlet is smaller; when the distance between the gas distributing holes close to the gas inlet is large, the outflow resistance of the sweeping gas is large, and when the distance between the gas distributing holes far away from the gas inlet is small, the outflow resistance of the sweeping gas is small, and finally the uniformity of the flow of the sweeping gas at each position of the gas outlet is improved.

Optionally, the bushing is in point contact with the inner wall of the chamber. The beneficial effects are that: the point contact is favorable to increasing the bush with the clearance between the inner wall of cavity promotes the heat preservation effect of bush, promotes simultaneously to sweep the gas mobility in the clearance, reinforcing sweeps the effect.

Drawings

FIG. 1 is a schematic structural view of a reaction chamber device according to an embodiment of the present invention;

FIG. 2 is a schematic cross-sectional view of the deposition chamber of FIG. 1 in position;

FIG. 3 is a schematic view showing the construction of a bush according to a first embodiment of the present invention;

FIG. 4 is a schematic view of a bushing according to a second embodiment of the present invention;

FIG. 5 is a schematic view of the construction of a bush according to a third embodiment of the present invention;

FIG. 6 is a schematic cross-sectional view of the transfer chamber of FIG. 1;

fig. 7 is a schematic view of the structure at the air outlet position shown in fig. 2.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention. Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. As used herein, the word "comprising" and similar words are intended to mean that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items.

In order to solve the problems in the prior art, the embodiment of the invention provides a reaction chamber device.

In some embodiments of the present invention, a flow guiding channel is disposed between the inner wall of the chamber and the liner, and the flow guiding channel is used for guiding the purge gas to flow in the purge cavity.

In some embodiments of the present invention, a groove is disposed on an outer wall of the bushing, and the drainage channel is formed between the groove and an inner wall of the chamber to guide the purge gas to flow along an extending direction of the groove.

In other embodiments of the present invention, a groove is disposed on an inner wall of the chamber, the drainage channel is formed between the groove and the liner, and the drainage channel guides the purge gas to flow along an extending direction of the groove.

FIG. 1 is a schematic structural diagram of a reaction chamber device according to an embodiment of the present invention.

FIG. 2 is a schematic cross-sectional view of the reaction chamber device shown in FIG. 1.

Fig. 3 is a schematic view of the structure of the bushing according to the first embodiment of the present invention.

In some embodiments of the present invention, referring to fig. 1, the reaction chamber apparatus shown in fig. 1 includes a chamber and an exhaust channel 8, the chamber includes a deposition chamber 1, a sheet transmission chamber 2, and an exhaust chamber 3, and the deposition chamber 1, the sheet transmission chamber 2, and the exhaust chamber 3 are communicated with each other; the exhaust passage 8 communicates with the deposition chamber 1 through an exhaust hole 81.

In some embodiments of the invention, referring to fig. 2 and 3, the reaction chamber device comprises a deposition chamber 1, a liner 4, a purge channel 5 and an exhaust channel 8, wherein the liner 4 is arranged in the deposition chamber 1, and the second purge cavity is formed between the liner 4 and the inner wall of the deposition chamber 1; a groove 41 is formed in the outer wall of the liner 4, the drainage channel for guiding the gas to flow is formed between the groove 41 and the inner wall of the deposition chamber 1, and the purge gas is guided to flow along the extending direction of the groove 41; the purge channel 5 is disposed at the bottom of the deposition chamber 1 and is communicated with the second purge cavity, so that purge gas enters the second purge cavity from the purge channel 5, flows into the deposition chamber 1, and is finally discharged into the exhaust channel 8 through the exhaust hole 81.

In some embodiments of the present invention, referring to fig. 2 and 3, the liner 4 is disposed in the deposition chamber 1, the liner 4 includes a bottom wall 62 and an annular side wall 63, the bottom wall 62 and the bottom surface of the deposition chamber 1 form a bottom purging cavity, the annular side wall 63 and the side surface of the deposition chamber 1 form a side purging cavity, the side purging cavity and the bottom purging cavity are communicated with each other, the purging channel 5 is disposed at the bottom of the deposition chamber 1, so that the purging gas flows from the purging channel 5, sequentially flows through the bottom purging cavity and the side purging cavity, and the purging gas performs purging on the side purging cavity and the bottom purging cavity more rapidly and uniformly under the guidance of the groove 41, then flows into the deposition chamber 1, and finally is discharged into the exhaust channel 8 through the exhaust hole 81.

In some embodiments of the present invention, referring to fig. 2, the purge channel 5 comprises a gas outlet 51, the gas outlet 51 is used for supplying purge gas to the second purge cavity formed between the liner 4 and the inner wall of the deposition chamber 1, and the gas outlet 51 is located on the bottom surface of the deposition chamber 1.

In some embodiments of the present invention, referring to fig. 3, the grooves 41 are disposed on the bottom wall 62 of the liner 4, and the purge gas is guided by the grooves 41 to perform the purge of the bottom purge cavity more rapidly and uniformly.

In some embodiments of the present invention, referring to fig. 3, the groove 41 extends from the bottom wall 62 to the annular side wall 63, so that the purge gas flows into the side purge cavity more quickly after filling the bottom purge cavity with the purge gas under the guidance of the groove 41, thereby improving purge uniformity of the bottom purge cavity and the side purge cavity.

Fig. 4 is a schematic view of a bushing according to a second embodiment of the present invention.

In some embodiments of the present invention, referring to fig. 4, the shape of the groove 41 is rectangular.

In other embodiments of the present invention, the groove 41 forms a triangle and a ring, but the present invention is not limited thereto.

FIG. 6 is a schematic cross-sectional view of the transfer chamber of FIG. 1.

In some embodiments of the present invention, referring to fig. 1, 5 and 6, the liner 4 is disposed in the sheet conveying chamber 2 (not shown in the figures) 1, and the first purge cavity is formed between the liner 4 and the inner wall of the sheet conveying chamber 2; a groove 41 is formed in the outer wall of the bushing 4, a drainage channel for guiding gas to flow is formed between the groove 41 and the inner wall of the sheet transfer chamber 2, and purging gas is guided to flow along the extending direction of the groove 41; the purging channel 5 is disposed at the bottom of the sheet conveying chamber 2 and is communicated with the first purging cavity, so that a purging gas enters the first purging cavity from the purging channel 5, flows into the deposition chamber 1 along a direction opposite to the direction a shown in the drawing, and is finally discharged into the exhaust channel 8 through the exhaust hole 81.

In some embodiments of the present invention, referring to fig. 5 and 6, the extending direction of the groove 41, i.e. the direction B in the figure, is perpendicular to the extending direction of the tablet transferring chamber 2, i.e. the direction a in the figure.

In some embodiments of the invention, the cross-section of the bush 4 is rectangular, having four outer contoured surfaces, the groove 41 being provided on one of the four outer contoured surfaces.

In some embodiments of the invention, the groove 41 is provided in one of the four outer contour surfaces and extends to two adjacent outer contour surfaces.

In some embodiments of the present invention, referring to fig. 5, the groove 41 surrounds the outer wall of the liner 4, i.e. the groove 41 extends on the outer wall of the liner 4 and surrounds the outer wall of the liner 4.

In some embodiments of the present invention, the liner 4 is in point contact with the inner walls of the deposition chamber 1, the sheet conveying chamber 2, and the gas pumping chamber 3, so as to increase the space size of the first purging cavity and the second purging cavity, improve the heat insulation effect of the liner 4, and simultaneously facilitate the improvement of the fluidity of the purging gas in the gap, and enhance the purging effect.

In some embodiments of the present invention, the point contact may be a protrusion formed on the surface of the liner 4 from the center to the outside by a machining process, the protrusion is distributed at equal intervals along the outer wall of the liner 4, and the protrusion abuts against the inner walls of the deposition chamber 1, the sheet transfer chamber 2, and the gas exhaust chamber 3, respectively.

In other embodiments of the present invention, the point contact connection may be implemented by a connector, and the connector is disposed on the outer contour surface of the liner 4 by a detachable connection method such as a screw connection, or a non-detachable connection method such as a welding or rivet connection, and is connected to the inner walls of the deposition chamber 1, the sheet transfer chamber 2, and the gas exhaust chamber 3, respectively.

In some embodiments of the present invention, referring to fig. 5 and 6, after the purge gas enters the first purge cavity formed between the inner wall of the tablet transferring chamber 2 and the liner 4 from the purge channel 5 to purge, a part of the purge gas flows into the inner side of the liner 4 from the purge hole 72, and purges and exhausts the reaction gas and the reaction product inside the liner 4, which is beneficial to improving the granularity performance inside the reaction cavity device and improving the film deposition quality.

In some embodiments of the present invention, the blowing holes 72 are bar-shaped holes, and the bar-shaped holes are disposed on the bottom surface of the groove 41.

In some embodiments of the present invention, referring to fig. 5, the purge holes 72 are circular holes with small diameters, and a plurality of the purge holes 72 are disposed on the bottom surface of the groove 41.

In other embodiments of the present invention, the purge holes 72 are disposed on both the bottom and the side of the groove 41.

In some embodiments of the present invention, referring to fig. 5, the plurality of purge holes 72 are arranged at equal intervals along the extending direction of the groove 41, that is, the center distances of adjacent purge holes 72 are equal, so that the flow rates of the purge gas entering the liner 4 at various positions in the extending direction of the groove 41 are substantially equal, and further, the purge gas can uniformly flow into the liner 4, thereby improving the purge uniformity inside the liner 4.

In some embodiments of the present invention, referring to fig. 6, the liner 4 is disposed in the tablet transferring chamber 2, and the purging channel 5 is disposed at the bottom of the tablet transferring chamber 2, in this case, the position of the gas outlet 51 corresponds to the position of the groove 41, so that the purging gas directly enters the area of the groove 41 through the purging channel 5, and the first purging cavity is uniformly purged under the guidance of the groove 41.

In some embodiments of the present invention, referring to fig. 5 and 6, the liner 4 is disposed in the tablet transferring chamber 2, the air outlet 51 of the purging channel 5 is disposed at the bottom of the tablet transferring chamber 2, and the purging hole 72 is disposed at a side of the groove 41 far from the air outlet 51, that is, the purging hole 72 is disposed in the groove near a side of the top of the tablet transferring chamber 2; since particles accumulate at the bottom position in the liner 41 due to gravity, in these embodiments, the purge gas flows into the liner 41 from the top of the liner 41, and can directly purge the particles accumulated at the bottom out of the liner 41; the blowing gas is prevented from flowing into the bottom of the lining 41, and particles accumulated at the bottom of the lining 41 are re-lifted, so that the blowing effect is prevented from being influenced.

Specifically, referring to fig. 5 and 6, the cross-sectional shape of the liner 4 is rectangular, and the groove 41 surrounds the outer wall of the liner 4, that is, the groove 41 extends on the four outer contour surfaces of the liner 4 and surrounds the outer wall of the liner 4, when the air outlet 51 of the purge channel 5 is opposite to a first outer contour surface of the four outer contour surfaces, the purge holes 72 are arranged in the groove 41 on a second outer contour surface, and the first outer contour surface and the second outer contour surface are opposite in orientation; enabling purge gas to enter a region between the first contour surface and the inner wall of the sheet transmission cavity 2 for purging; then, after being guided by the groove 41, part of the purge gas flows through the area between the other two contour surfaces adjacent to the first contour surface and the inner wall of the sheet conveying cavity 2 for purging; then, after being guided by the groove 41, part of the purge gas flows through the area between the second contour surface 82 and the inner wall of the tablet transferring chamber 2 for purging; finally, part of the purging gas passes through the purging hole 72 and enters the inside of the lining 4 for purging, so that the purging gas flows around the outer wall of the lining 4 for a circle and then enters the inside of the lining 4, and the gas is prevented from directly entering the inside of the lining 4 to influence the uniformity of the purging effect in the first purging cavity.

In some embodiments of the present invention, the projections of the grooves 41 on the inner walls of the deposition chamber 1, the sheet transfer chamber 2 and the gas pumping chamber 3 cover the gas outlet 51 of the purge channel 5.

Fig. 7 is a schematic view of the structure of the air outlet shown in fig. 2.

In some embodiments of the present invention, referring to fig. 7, the gas outlet 51 is annular, which is beneficial to increase the input area of the purge gas.

In other embodiments of the present invention, the shape of the air outlet 51 may be a hollow polygon, such as a hollow triangle or a hollow rectangle, but the present invention is not limited thereto.

In some embodiments of the present invention, referring to fig. 7, the reaction chamber apparatus (not shown) further includes a gas distribution plate 52, the gas distribution plate 52 is annular, the gas distribution plate 52 is provided with gas distribution holes 53 arranged along a circumferential direction around a center of the gas outlet 51, and the gas distribution plate 52 is hermetically installed at the position of the gas outlet 51, such that the purge gas does not flow out from the gas outlet 51, but flows into a second purge cavity formed between the liner 4 and the inner wall of the deposition chamber 1 through the gas distribution holes 53.

In some embodiments of the present invention, referring to fig. 7, the purge channel 5 further includes a gas inlet 54, the gas inlet 54 is communicated with an external gas source, the distance between adjacent gas distribution holes 53 is greater at a position close to the gas inlet 54 than at a position far away from the gas inlet 54, the flow rate of the purge gas is greater at the position close to the gas inlet 54, and the flow rate of the purge gas is smaller at the position far away from the gas inlet 54; when the distance between the gas distribution holes 53 close to the gas inlet 54 is large, the flowing resistance of the purge gas is large, and when the distance between the gas distribution holes 53 far away from the gas inlet 54 is small, the flowing resistance of the purge gas is small, and finally the flow uniformity of the purge gas among the gas distribution holes 53 is improved; specifically, the distance between the adjacent air distribution holes 53 is a distance in the circumferential direction with the center of the air outlet 51 as the center of a circle.

Although the embodiments of the present invention have been described in detail hereinabove, it is apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it is to be understood that such modifications and variations fall within the scope and spirit of the present invention as set forth in the following claims. Moreover, the invention as described herein is capable of other embodiments and of being practiced or of being carried out in various ways.

Claims

1. A reaction chamber device, comprising: a chamber, a liner, a purge passage, and an exhaust passage; the lining is arranged on the inner wall of the cavity, and a purging cavity is formed between the lining and the inner wall of the cavity;

a drainage channel is arranged between the inner wall of the cavity and the lining and is used for guiding the purging gas to flow in the purging cavity;

the purging channel, the exhaust channel and the purging cavity are communicated with each other, so that purging gas is input into the purging cavity through the purging channel for purging, and is exhausted from the exhaust channel.

2. The reaction chamber device as claimed in claim 1, wherein the outer wall of the liner is provided with a groove, the groove and the inner wall of the chamber form the flow guide channel therebetween, and the flow guide channel guides the purge gas to flow along the extending direction of the groove.

3. The reaction chamber device as claimed in claim 1, wherein a groove is formed on an inner wall of the chamber, the groove and the lining form the flow guide channel therebetween, and the flow guide channel guides the flow of the purge gas along an extending direction of the groove.

4. The reaction chamber device of claim 2, wherein the purge cavity comprises a first purge cavity, the chamber comprises a sheet transfer chamber, the bushing is disposed in the sheet transfer chamber, and the first purge cavity is formed between a side wall of the bushing and an inner wall of the sheet transfer chamber.

5. The reaction chamber device of claim 4 wherein the direction of extension of the groove is perpendicular to the axial direction of the liner.

6. The reactor chamber device as claimed in claim 5, wherein the groove surrounds a sidewall of the liner.

7. The reaction chamber device as claimed in claim 5, wherein a purge hole is provided in the groove.

8. The reaction chamber device as claimed in claim 7, wherein a plurality of the purge holes are arranged at equal intervals along the extending direction of the groove.

9. The reaction chamber device as claimed in claim 7, wherein the purge passage includes a gas outlet for outputting a purge gas, and the purge hole is located on a side away from the gas outlet.

10. The reactor chamber assembly of claim 2 wherein the purge cavity comprises a second purge cavity, the chamber comprising a deposition chamber, the liner disposed within the deposition chamber, the liner and an inner wall of the deposition chamber forming the second purge cavity therebetween.

11. The reaction chamber device of claim 10, wherein the second purging cavity comprises a bottom purging cavity and a side purging cavity, the bushing comprises a bottom wall and an annular side wall disposed on the bottom wall, and the bottom wall and the annular side wall form the bottom purging cavity and the side purging cavity with the inner wall of the deposition chamber, respectively.

12. The reactor chamber device as claimed in claim 11, wherein the groove is disposed on the bottom wall.

13. The reactor chamber device as claimed in claim 12, wherein the groove extends from the bottom wall to the annular sidewall.

14. The reactor chamber device as claimed in claim 11, wherein the groove is formed on the bottom wall in any one of a circular shape, a rectangular shape or a triangular shape.

15. The reaction chamber device as claimed in claim 1, wherein the purge passage comprises a gas outlet for outputting purge gas, the gas outlet being disposed on an inner wall of the chamber and opposite to the flow guide passage.

16. The reactor chamber device as claimed in claim 15 wherein the gas outlet is annular in shape.

17. The reaction chamber device of claim 16, further comprising a gas distribution plate disposed at the gas outlet, wherein the gas distribution plate is provided with gas distribution holes arranged along a circumferential direction, so that the purge gas enters the purge cavity through the gas distribution holes.

18. The reaction chamber device as claimed in claim 17, wherein the purge channel further comprises a gas inlet, the gas inlet is communicated with an external gas source, and the distance between adjacent gas distribution holes is larger at a position close to the gas inlet than at a position far away from the gas inlet.

19. The reactor chamber assembly of claim 1 wherein the liner is in point contact with the inner wall of the chamber.