CN117089927B - Gas purging system and purging method of film epitaxy equipment - Google Patents
Gas purging system and purging method of film epitaxy equipment Download PDFInfo
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- CN117089927B CN117089927B CN202311328751.1A CN202311328751A CN117089927B CN 117089927 B CN117089927 B CN 117089927B CN 202311328751 A CN202311328751 A CN 202311328751A CN 117089927 B CN117089927 B CN 117089927B
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- 238000010926 purge Methods 0.000 title claims abstract description 305
- 238000000407 epitaxy Methods 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000006243 chemical reaction Methods 0.000 claims abstract description 80
- 239000007921 spray Substances 0.000 claims abstract description 61
- 239000010409 thin film Substances 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 20
- 238000007789 sealing Methods 0.000 claims description 17
- 238000004321 preservation Methods 0.000 claims description 14
- 238000009413 insulation Methods 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 238000004378 air conditioning Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 abstract description 137
- 239000012495 reaction gas Substances 0.000 abstract description 22
- 238000000151 deposition Methods 0.000 abstract description 18
- 230000008021 deposition Effects 0.000 abstract description 12
- 238000013461 design Methods 0.000 abstract description 11
- 238000009792 diffusion process Methods 0.000 abstract description 3
- 230000007547 defect Effects 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 239000012535 impurity Substances 0.000 description 10
- 238000000605 extraction Methods 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 238000005086 pumping Methods 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 239000013049 sediment Substances 0.000 description 6
- 239000012159 carrier gas Substances 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000012423 maintenance Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 230000003749 cleanliness Effects 0.000 description 2
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 241001330002 Bambuseae Species 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
Abstract
The application discloses a gas purging system and a purging method of a thin film epitaxy device. The thin film epitaxy apparatus includes: the reaction cavity comprises a shell and a lining barrel positioned in the shell; the spray header is arranged at the top of the shell; the material carrying part is arranged at the bottom side in the shell and used for placing the substrate, and a second heater is arranged in the supporting part; the gas purging system includes: the top sweeps the subassembly, and it includes the shower head that communicates to the shower head sweeps the pipeline and includes gaseous ring and sweeps the side direction of pipeline and the casing and sweep the subassembly, gaseous ring sweeps the end of giving vent to anger of pipeline and is located the casing and be close to the shower head side, and the surface that keeps away from the casing side of lining cylinder is followed to the purge gas that lets in and is moved to carrying material portion side, and the casing sweeps the pipeline and includes a plurality of branches, and it all communicates to the inboard of casing. By the design, deposition of reaction gas on the non-effective surface can be reduced, diffusion of substances causing epitaxial defects into a process area is blocked, and epitaxial quality is improved.
Description
Technical Field
The application relates to the technical field of semiconductor equipment, in particular to a gas purging system and a purging method of film epitaxy equipment.
Background
Epitaxial equipment (also called equipment) for preparing gallium nitride, silicon carbide and the like generally integrates the functions of gas transportation, gas mixing and the like. The gas required by the running of the equipment flows to the spray header in the equipment through the pipeline, and flows into the reverse direction after being evenly mixed by the spray header
And chemical reaction is carried out in the cavity and on the surface of the substrate to generate the monocrystalline film. In the case of the solution disclosed in the chinese patent No. CN111052308A, in order to make the concentration distribution of impurities in the grown single crystal thin film uniform, the substrate is divided into a central portion and an outer portion
Different process gases are supplied to the periphery, but the process gases hardly protect structures such as the inner wall of a reaction chamber, partial reaction gases can be deposited on the non-effective surface, so that the influences of window blocking, viewing port shielding and the like are caused, and meanwhile, epitaxial defects are influenced
The diffusion of substances into the effective process area, which also damages the heating body and rotating parts inside the apparatus.
Disclosure of Invention
To overcome the above drawbacks, the object of the present application is: a gas purging system and a purging method for a thin film epitaxy apparatus are provided. The gas purging system can improve the epitaxial growth quality.
In order to achieve the above purpose, the present application adopts the following technical scheme:
A gas purging system for a thin film epitaxy apparatus for a silicon carbide epitaxy apparatus, the thin film epitaxy apparatus comprising:
the reaction cavity comprises a columnar shell and a lining barrel, wherein the lining barrel is positioned at the inner side of the shell, and a discharge port is formed in the bottom of the reaction cavity;
an insulation layer is arranged between the shell and the lining barrel, a first heater is arranged between the insulation layer and the lining barrel, and the first heater extends along the axial direction of the shell;
the spray header is arranged at the top of the shell; the material carrying part is arranged at the bottom side in the shell and is opposite to the spray header, the material carrying part comprises a supporting part for placing a substrate, and a second heater is arranged in the supporting part;
the gas purging system includes:
a top purge assembly comprising a showerhead purge line, the showerhead purge line being connected to the showerhead; a kind of electronic device with high-pressure air-conditioning system
The side direction sweeps the subassembly, and it includes gaseous ring purge line and casing purge line, gaseous ring purge line's end of giving vent to anger is located in the casing and be close to the shower head side, and the purge gas of letting in is followed the surface of keeping away from the casing side of inside lining section of thick bamboo is to carrying material portion side flow, the casing purge line includes a plurality of branches, the end of giving vent to anger of branch all communicates to the inboard of casing, in order to let in purge gas in the casing. By the design, the reaction gas can be prevented from depositing on the non-effective surface, excessive sediment is generated, and the service life of the equipment is shortened.
In a preferred embodiment, the gas purging system further comprises a cavity opening purging component, wherein the cavity opening purging component comprises a cavity opening purging pipeline, a cavity opening purging valve is arranged on the cavity opening purging pipeline, and the cavity opening purging pipeline is communicated to the spray header and is communicated with the spray header purging pipeline and an air inlet pipeline of the spray header in a matching way; the bottom purging component comprises a rotary purging pipeline and a second heater purging pipeline, the air outlet end of the rotary purging pipeline is communicated with a rotary driving piece, and the rotary driving piece is connected with the supporting part; and the air outlet end of the second heater purging pipeline is communicated with the supporting part, and purging gas blown to the second heater is introduced into the supporting part. Through such design, the reaction chamber is in under the open cavity state, carries out the open cavity and sweeps, prevents that outside air from causing the pollution to reaction chamber inside, prevents simultaneously that there is the deposit to get into in the rotary drive spare and causes rotatory card to stop, causes equipment damage.
In a preferred embodiment, the gas ring purging pipeline comprises a first gas ring pipeline and a second gas ring pipeline, the first gas ring pipeline and the second gas ring pipeline are spliced through a first connecting part, and the first connecting part comprises a first connecting plate connected to the spray header and a second connecting plate connected to one end of the shell close to the spray header. By means of this design, an opening of the cavity at the first connection point can be achieved.
In a preferred embodiment, the housing includes a first housing and a second housing, the second air ring pipeline includes a first sub pipeline and a second sub pipeline, the first sub pipeline and the second sub pipeline are split by a second connection part, and the second connection part includes a third connection plate connected to the first housing and a fourth connection plate connected to the second housing. By such a design, an opening of the cavity at the location of the second connection can be achieved.
In a preferred embodiment, the lateral purge assembly further comprises a first heater purge line passing through the second connection portion and the first connection portion, and an air outlet end thereof is connected to a side of the first heater close to the showerhead. Through the design, the reaction gas is prevented from reacting with the first heater, and the service life of the first heater is prolonged.
In a preferred embodiment, the position of the heat-insulating layer corresponding to the second connecting part is detachable into a first heat-insulating layer and a second heat-insulating layer, the bottom of the second heat-insulating layer is connected with a lifting driving piece through a baffle, and the lifting driving piece is connected with a baffle purging pipeline. Through such design, sweep the lift driving piece, prevent that the deposit from causing lift card to hang over.
In a preferred embodiment, the top purge assembly further includes a temperature port purge line connected to the temperature port on the showerhead for introducing purge gas to the temperature port.
The embodiment of the application provides a purging method for purging the purging system, the gas purging system further comprises an air extraction pipeline, a vacuum suction valve is arranged on the air extraction pipeline, the air extraction pipeline is communicated to the first connecting part and the second connecting part, when the reaction cavity is in a closed state,
opening a vacuum suction valve, exhausting air based on an air exhausting pipeline to enable the first connecting part and the second connecting part to be connected in a sealing way,
and respectively introducing purge gas into the reaction cavity based on the top purge component and the lateral purge component.
The embodiment of the application provides a purging method of a gas purging system of a thin film epitaxy device, wherein the thin film epitaxy device comprises the following steps: the reaction cavity comprises a shell and a lining barrel, wherein the shell comprises a first shell and a second shell; an insulating layer is arranged between the shell and the lining barrel; the spray header is arranged at the top of the reaction cavity; the material carrying part is arranged at the bottom of the reaction cavity and is opposite to the spray header, the material carrying part comprises a supporting part for placing a substrate, and a second heater is arranged in the supporting part;
A first connection part including a first connection plate connected to the showerhead and a second connection plate connected to a second connection plate provided to the housing; and a second connecting part comprising a third connecting plate arranged on the first shell and a fourth connecting plate arranged on the second shell,
the gas purging system includes: the open-cavity purging pipeline is communicated to the spray header;
the side direction sweeps the subassembly, and it includes the casing and sweeps the pipeline, the casing sweeps the pipeline and includes a plurality of branches, the end of giving vent to anger of branch road all communicates to the inboard of casing, its characterized in that:
when the reaction cavity is in the first cavity opening state, the first connecting part is disconnected,
the method comprises the following steps:
opening a cavity opening purging valve, introducing purging gas to the spray header based on a cavity opening purging pipeline,
simultaneously, based on the fact that the shell purging pipeline is used for introducing purging gas into the shell, the baffle purging pipeline is used for introducing purging gas into the joint of the lifting driving piece and the reaction cavity, the rotary purging pipeline is used for introducing purging gas into the rotary driving piece, and the second heater purging pipeline is used for introducing purging gas into the second heater.
Further, when the reaction chamber is in the second open chamber state, the first connection portion and the second connection portion are disconnected, and the method includes:
The open-cavity purge valve is opened,
purge gas is introduced into the spray header based on the open-cavity purge pipeline,
simultaneously, based on the shell purging pipeline, purging gas is introduced into the second shell, the baffle purging pipeline is used for introducing purging gas into the joint of the lifting driving piece and the reaction cavity, the rotary purging pipeline is used for introducing purging gas into the rotary driving piece, and the second heater purging pipeline is used for introducing purging gas into the second heater.
Advantageous effects
According to the gas purging system of the film epitaxy equipment, by arranging the matched pipelines, purging gas can be introduced into the gas purging system during epitaxial growth, reaction gas is prevented from depositing in the reaction cavity, sediment deposited in the reaction cavity or adsorbed impurities are prevented from diffusing to the reaction channel, and the epitaxial quality is improved; the method can also be used for cavity opening maintenance occasions, and purge gas is introduced in a cavity opening state to prevent the reaction cavity from being polluted so as to improve the epitaxial quality in the subsequent epitaxial growth. By arranging a temperature measuring port purging pipeline, reaction gas is prevented from depositing at the temperature measuring port of the spray header (affecting the temperature measuring precision) during epitaxial growth; purge pipelines are respectively arranged on the first heater and the second heater so as to prevent the first heater and the second heater from reacting with gas and prolong the service life; the rotary purging pipeline and the baffle purging pipeline are arranged, sediment is prevented from falling, and the rotary part and the lifting baffle are blocked, so that maintenance cost is reduced.
Drawings
The accompanying drawings are included to provide an understanding of the technical aspects of the present disclosure, and are incorporated in and constitute a part of this specification, illustrate the technical aspects of the present disclosure and together with the embodiments of the disclosure, not to limit the technical aspects of the present disclosure. The shapes and sizes of the various components in the drawings are not to scale, and are intended to be illustrative only of the present application.
Fig. 1 is a schematic view of an internal structure of a thin film epitaxy apparatus according to an embodiment of the present application;
FIG. 2 is a schematic view of a thin film epitaxy apparatus according to an embodiment of the present application in a first open cavity state;
FIG. 3 is a schematic view of a thin film epitaxy apparatus according to an embodiment of the present application in a second open chamber state;
FIG. 4 is an enlarged partial schematic view of FIG. 1 at A;
FIG. 5 is an enlarged partial schematic view at B in FIG. 2;
reference numerals:
10. a reaction chamber; 11. a housing; 111. a first housing; 112. a second housing; 113. a view port; 114. a transmission port; 115. a discharge port; 1151. a tail gas vacuum valve; 116. a temperature measuring port; 12. a heat preservation layer; 121. a first heat-retaining layer; 122. a second heat-insulating layer; 123. a baffle; 124. a lifting driving member; 13. a first heater; 14. a liner; 141. a first inner cylinder; 142. a second inner cylinder; 143. a third inner cylinder;
2. A spray header;
31. a source gas line; 32. a carrier gas line; 33. an air extraction pipeline; 331. a vacuum suction valve; 332. an inflation valve;
41. the spray header sweeps the pipeline; 42. purging the pipeline through the temperature measuring port; 43. a cavity opening purging pipeline; 431. a cavity opening purge valve; 44. the gas ring sweeps the pipeline; 441. a first gas ring pipeline; 442. a second gas ring pipeline; 4421. a first sub-line; 4422. a second sub-line; 45. a first heater purge line; 46. the shell sweeps the pipeline; 47. a baffle purging pipeline; 48. rotating the purge line; 49. a second heater purge line; 400. a flow rate adjusting gasket;
51. a support part; 52. a tray; 53. a second heater; 54. a rotary driving member;
61. a first connection plate; 62. a second connecting plate; 63. a third connecting plate; 64. a fourth connecting plate;
71. an air inlet; 72. a receiving groove; 721. a telescopic seal compensation component; 722. a first flange; 723. a second flange; 724. connecting an air pipe; 725. a first boss; 726. a second boss; 727. an elastic member; 728. a fixing ring; 73. an airway; 74. circular seams; 75. and a compression ring.
Description of the embodiments
The above-described aspects are further described below in conjunction with specific embodiments. It should be understood that these examples are illustrative of the present application and are not limiting the scope of the present application. The implementation conditions employed in the examples may be further adjusted as in the case of the specific manufacturer, and the implementation conditions not specified are typically those in routine experiments.
The application discloses a film epitaxy device, which comprises a reaction cavity, wherein the reaction cavity comprises a shell and a lining barrel which are coaxially arranged, the lining barrel is positioned at the inner side of the shell, a discharge port is formed in the bottom of the reaction cavity and used for discharging tail gas, a spray header is arranged at the top of the shell and used for introducing gas (such as process gas and purge gas) into the reaction cavity; the bottom in the reaction chamber has a material carrying part which is arranged opposite to the spray header, and the material carrying part comprises a tray, the bottom (far away from the spray header side) of the tray is connected with a rotary driving piece, the tray is driven to rotate based on the driving of the rotary driving piece, and the tray is used for placing a substrate (such as a silicon carbide substrate). The shell is columnar.
The application proposes a gas purging system of film epitaxy equipment, it is arranged in carborundum epitaxy equipment, and this gas purging system is arranged in the film epitaxy equipment, includes: a top purge assembly and a side purge assembly. The top purge assembly includes a showerhead purge line that communicates to the showerhead; the side direction sweeps the subassembly, and it includes gaseous ring purge line and casing purge line, and the end of giving vent to anger of this gaseous ring purge line is located the casing and is close to the shower head side, and the purge gas of letting in flows to carrying material portion side along the surface of keeping away from the casing side of lining barrel, and this casing purge line includes a plurality of branches, and the end of giving vent to anger of this branch all communicates to the inboard of casing. By the design, the deposition of the reaction gas on the non-effective surface can be reduced, excessive deposition is avoided, and the epitaxial growth quality is improved; under the condition that the reaction cavity is in an open cavity state (maintenance state), the gas purging system is filled with purging gas so as to prevent the pollution of the outside air to the inside of the reaction cavity, and simultaneously prevent deposits from entering the rotary driving part to cause rotary clamping and stopping, thereby causing equipment damage.
The gas purging system of the thin film epitaxy apparatus according to the present application will be described with reference to fig. 1 to 5.
The film epitaxy equipment comprises a reaction cavity 10, wherein the reaction cavity 10 comprises a shell 11 and a lining barrel 14 positioned in the shell 11, a spray header 2 is arranged at the top of the reaction cavity 10, a material carrying part is arranged at the bottom of the reaction cavity 10, and the spray header 2 and the material carrying part are oppositely arranged. The shower head 2 is communicated with a plurality of air inlet pipelines, reaction gas is introduced into the reaction cavity 10, the material carrying part comprises a supporting part 51, a tray 52 for placing a substrate is arranged on the supporting part 51, and the gas is guided onto the substrate in the reaction cavity 10 through the shower head 2. Preferably, the shell 11 and liner 14 are coaxially disposed. The support portion 51 is hollow along the axial direction thereof, and preferably, the support portion 51 is made of graphite. The spray header 2 is provided with a temperature measuring port 116, and the temperature measuring port 116 is provided with an infrared thermometer (not shown) which can detect the temperature in the reaction cavity 10 in real time and feed back the temperature to the control system in time.
The housing 11 is provided with a view port 113 and a transfer port 114, a substrate (not shown) and a tray 52 are transferred through the transfer port 114 (e.g., a robot enters and exits the transfer port 114 to transfer the substrate and the tray, an operator can observe the growth of the substrate in the reaction chamber 10 through the view port 113. An end of the housing 11 in the axial direction away from the showerhead 2 is provided with a discharge port 115 for exhaust gas, preferably, the discharge port 115 is connected with a discharge pipe, the discharge pipe is provided with an exhaust gas vacuum valve 1151, the exhaust gas vacuum valve 1151 is communicated with a vacuum pumping device (not shown), when the reaction chamber 10 is in a closed state, the exhaust gas vacuum valve 1151 is opened, and when the reaction chamber 10 is in an open state, the exhaust gas vacuum valve 1151 is closed.
The loading part further comprises a rotary driving member 54 connected to the side of the supporting part 51 far from the tray 52, and drives the tray 52 to rotate based on the driving of the rotary driving member 54. The support portion 51 is provided therein with a second heater 53, and the tray 52 and the substrate thereon are heated by the second heater 53.
An insulating layer 12 is provided between the casing 11 and the liner tube 14, a gap is provided between the insulating layer 12 and the casing 11, a first heater 13 is provided in the gap between the insulating layer 12 and the liner tube 14, and the first heater 13 extends in the axial direction of the casing 11. The heat preservation 12 includes first heat preservation 121 and second heat preservation 122, and first heat preservation 121 and second heat preservation 122 extend along the axial of casing 11, and the second heat preservation 122 keep away from first heat preservation 121 side (i.e. the bottom) is provided with baffle 123, and the baffle 123 is connected to lift driver 124, drives baffle 123 and second heat preservation 122 and reciprocates along the axial of reaction chamber 10 through lift driver 124, and when second heat preservation 122 moves down to the preset position, does not cover transmission port 114, can carry out the taking and placing of tray (together with the substrate) this moment. The lifting driving member 124 may be a cylinder, a telescopic motor, a hydraulic telescopic rod, or the like.
The liner 14 includes a first inner cylinder 141, a second inner cylinder 142, and a third inner cylinder 143, which are disposed along the axial direction of the reaction chamber 10, the first inner cylinder 141 being adjacent to the showerhead 2. The second inner cylinder 142 is disposed inside the first heat-retaining layer 121. The third inner cylinder 143 is inclined outwards away from one end of the spray header 2, so that the bottom space of the reaction cavity 10 is increased, the circulation of reaction gas is facilitated, and the exhaust emission is facilitated. Preferably, the first inner cylinder 141, the second inner cylinder 142, and the third inner cylinder 143 are coaxially disposed. In this embodiment, the first inner cylinder 141 is close to one side of the showerhead 2 and has a gap with the showerhead 2, the first inner cylinder 141 is in a horn shape, and the gas (such as inert gas) introduced from the showerhead purge line 41 flows into the housing 11 through the purge air holes 21 of the showerhead 2, flows along the second surface (the second surface is disposed opposite to the first surface 141 b) of the first inner cylinder 141 toward the second inner cylinder 142, and guides the gas flowing out from the showerhead 2, so that the gas flows toward the substrate side. The second inner cylinder 142 is parallel or substantially parallel to the first heat retaining layer 121. The first heater 13 is disposed between the first insulating layer 121 and the second inner tube 142, and is configured to heat the gas flowing therein.
The gas purging system of the thin film epitaxy apparatus of the present application will be described with reference to fig. 1 to 5.
The gas purging system includes a top purge assembly and a side purge assembly.
The top purge component is configured on the top side of the reaction chamber 10, and comprises a shower head purge pipeline 41, wherein an air outlet end of the shower head purge pipeline 41 is communicated to the shower head 2, and purge gas is introduced into the shower head 2. Preferably, the top purging assembly further comprises a temperature measuring port purging pipeline 42, which is communicated to the temperature measuring port 116 on the spray header 2, and purge gas (such as argon) is introduced into the temperature measuring port 116 through the temperature measuring port purging pipeline to prevent reaction gas from depositing at the temperature measuring port 116 during epitaxial growth (affecting temperature measuring precision).
The lateral purge assembly includes a gas ring purge line 44 and a housing purge line 46.
The gas outlet end of the gas ring purging pipeline 44 is communicated with the inner side of the lining cylinder 14, and purging gas is introduced into the inner side of the lining cylinder 14 to concentrate the reaction gas to the middle of the reaction cavity 10 as much as possible, so that the utilization rate of the reaction gas is improved; the process gas flowing out of the showerhead 2 is isolated from the inner wall of the liner 14 by the gas blown out of the gas ring purge line 44 and the purge gas introduced from the showerhead purge line to reduce deposition of the reaction gas on the surface of the liner 14.
The housing purge line 46 is provided with a plurality of branches 461, the gas outlet ends of the branches 461 are all communicated to the inner side of the housing 11, and the introduced purge gas flows to the material loading part side along the gap between the housing 11 and the heat insulating layer 12 (and is discharged through the discharge port 115), so as to purge the inner side/inside of the housing 11. Preferably, at least 2 gas outlet branches 461 (first branches) are arranged from the upper end (near the shower head side) to the lower end of the housing 11, so as to prevent the reaction gas from diffusing and depositing into the reaction chamber 10, and prevent particles (such as metal ions or particles adsorbed on the surface) or deposits on the inner wall surface of the chamber from diffusing into the epitaxial active region. Preferably, the shell purging pipeline 46 includes a branch 462 (second branch) with an air outlet end connected to the viewing port 113 and a branch 463 (third branch) with a transmission port 114, so that glass at the viewing port 113 is not blocked by sediment, and external personnel can observe the condition inside the reaction chamber 10 through the viewing port 113, thereby avoiding sediment of reactants on the surface of the transmission port 114, and avoiding unsmooth tray taking and conveying processes, and damage of parts. Preferably, a flow adjustment gasket 400 may be added to each leg of the housing purge line 46 to provide a reasonable distribution of the flow of purge gas to each leg, preventing short circuiting of the flow of some legs due to maldistribution of the flow.
The gas ring purging line 44 includes a detachable first gas ring pipeline 441 and a detachable second gas ring pipeline 442, and the first gas ring pipeline 441 and the second gas ring pipeline 442 are communicated through a first connection portion. Preferably, the first connection part comprises a first connection plate 61 and a second connection plate 62 which are mutually spliced, wherein the first connection plate 61 is connected to the circumference of the spray header 2, the second connection plate 62 is connected to one end of the shell 11 close to the spray header 2, and the sealing and the opening of the reaction chamber 10 are realized by splicing and splitting the first connection plate 61 and the second connection plate 62.
The second gas ring pipeline 442 includes a first detachable sub-pipeline 4421 and a second detachable sub-pipeline 4422, the first sub-pipeline 4421 and the second sub-pipeline 4422 are mutually spliced by a second connecting portion, the housing is detachably arranged as a first housing 111 and a second housing 112 at a position corresponding to the second connecting portion, and the second connecting portion includes a third connecting plate 63 connected to the first housing 111 and a fourth connecting plate 64 connected to the second housing 112. The third connecting plate 63 and the fourth connecting plate 64 are spliced and split to realize the sealing and the opening of the reaction chamber 10.
The shell purging pipeline 46 has a part of branches passing through the second connection part, and at least the gas outlet end of the part of branches is communicated with the inner wall of the first shell 111 and the inner wall of the second shell 112, so as to complete the purging work on the inner wall of the shell. In one embodiment, the viewing port 113, the delivery port 114, and the discharge port 115 are all disposed on the second housing 112.
In one embodiment, the lateral purge assembly further includes a first heater purge line 45, where the first heater purge line 45 passes through the second connection portion and the first connection portion, and an air outlet end of the first heater purge line 45 is connected to a side of the first heater 13 near the showerhead 2 for introducing purge gas.
The first connection part comprises a first connection plate 61 connected to the shower head 2 and a second connection plate 62 arranged at one end of the first housing 111 near the shower head 2. In the present embodiment, the second connection plate 62 has a first recess 62a and a second recess 62b on the side facing the showerhead 2, and the second recess 62b is located inside the first recess 62 a. The first recess 62a accommodates a first seal ring 65a (also referred to as an O-ring) and the second recess 62b accommodates a second seal ring 65b (also referred to as an O-ring). The second seal ring 65b encloses the second through hole 62c of the second connection plate 62, the second through hole 62c communicates with the first through hole 61a of the first connection plate 61 after the first connection plate 61 and the second connection plate 62 are combined, and the sealing performance is improved by the double seal ring (also referred to as double O ring) design of the first seal ring 65a and the second seal ring 65b. In other embodiments, the first seal 65a and the second seal 65b may be provided on the first connection plate 61. Similarly, the first connection portion is also provided with a second seal 65b at the through hole communicating with the first heater purge line.
The second connection portion includes a third connection plate 63 disposed at an end of the first housing 111 away from the showerhead 2, and a fourth connection plate 64 disposed at an end of the second housing 112 near the first housing 111, in this embodiment, the fourth connection plate 64 has a third recess 64a and a fourth recess 64b on a side facing the third connection plate 63, and the fourth recess 64b is located inside the third recess 64 a. The third recess 64a receives the third seal ring 66a and the fourth recess 64b receives the fourth seal ring 66b. The fourth seal ring 66b encloses the fourth through hole 64c in the fourth connecting plate 64, the fourth through hole 64c communicates with the third through hole 63a in the third connecting plate 63 after the third connecting plate 63 and the fourth connecting plate 64 are combined, and the sealing performance is improved by the double seal ring (also referred to as double O-ring) design of the third seal ring 66a and the fourth seal ring 66b. In other embodiments, the third seal ring 66a and the fourth seal ring 66b may be disposed on the third connection plate 63. Similarly, a fourth seal 66b is also provided on the second connection portion at the aperture communicating with the first heater purge line.
In a specific embodiment, the first connecting plate 61, the second connecting plate 62 and the third connecting plate 63 sequentially penetrate through the air extraction pipeline 33, one side end of the air extraction pipeline 33 is connected with the vacuum suction valve 331 and the air charging valve 332, when the air suction valve 332 is in the closed state (see fig. 1 and fig. 2 and 3), the vacuum suction valve 331 is opened, and the first connecting plate 61 is tightly connected with the second connecting plate 62 by vacuumizing through the air extraction pipeline 33, and the first sealing ring 65a and the second sealing ring 65b are arranged between the first connecting plate 61 and the second connecting plate 62, so as to improve the sealing effect of the connection. The third connecting plate 63 is tightly connected with the fourth connecting plate 64, and the third sealing ring 66a and the fourth sealing ring 66b are arranged between the third connecting plate 63 and the fourth connecting plate 64, so that the sealing effect of the connection is improved. In the present embodiment, the first connection plate 61 is provided with the first air-extracting hole 61b, the second connection plate 62 is provided with the second air-extracting hole 62d, one side of the second connection plate 62 is provided with a recess, the recess encloses the second air-extracting hole 62d, the fifth seal ring 65c is provided therein, the third connection plate 63 is provided with the third air-extracting hole 63d, one side of the fourth connection plate 64 facing the third connection plate 63 is provided with a recess, the recess accommodates the sixth seal ring 66c, and the sixth seal ring 66c is arranged so as to enclose the third air-extracting hole 63d after the third connection plate 63 is connected with the fourth connection plate 64 (to improve the air tightness at the connection point). One side end of the first pumping pipe 333 is connected and communicated with the third pumping hole 63d, the other end is connected and communicated with the second pumping hole 62d, one side end of the second pumping pipe 334 is connected and communicated with the first pumping hole 61b, and the other side is connected to the vacuum suction valve 331 and the inflation valve 332. Vacuum suction valve 331 and inflation valve 332 are electrically connected to a control system, which controls the opening and closing thereof.
The tight connection of the second air pumping holes 62d is used for pumping air between two adjacent connecting plates to form a vacuum airtight space, so that the air tightness of the cavity is effectively improved.
In an embodiment, the top of the reaction chamber 10 is further configured with a cavity-opening purging component, which includes a cavity-opening purging pipe 43, on which a cavity-opening purging valve 431 is disposed, and the cavity-opening purging pipe 43 is connected to the showerhead 2 and correspondingly connected to the showerhead purging pipe 41 and an air inlet pipe connected to the showerhead 2. When the reaction cavity is in the cavity opening state, the air inlet pipeline stops air inlet, the reaction gas does not flow out in the spray header 2 any more, and the air is introduced into the spray header purging pipeline 41 and the air inlet pipeline through the cavity opening purging pipeline 43, so that the atmospheric environment is prevented from entering the pipelines, water vapor and impurities are introduced, and the inside of the pipelines is polluted. The air inlet pipeline comprises a carrier gas pipeline 32 and a source gas pipeline 31, wherein the carrier gas pipeline 32 is connected with carrier gas, the source gas pipeline 31 is connected with source gas, and the carrier gas and the source gas are respectively introduced into the spray header 2 and flow into the reaction cavity 10 from the spray header 2.
In one embodiment, the gas purging system includes a bottom purge assembly disposed at the bottom of the reaction chamber 10. The bottom purge assembly includes a rotary purge line 48 and a second heater purge line 49. The outlet end of the rotary purge line 48 communicates with (is directed toward) the junction of the rotary drive 54 and the housing 11. Such a design prevents the reaction gas from diffusing into the interior of the rotary drive 54, creating deposits and causing the deposits to flake off at the bottom of the reaction chamber 10 due to the high temperature, causing spin lock or seizing, increasing the risk of the tray 52 flying out during rotation. The air outlet end of the second heater purge line 49 is directed to the second heater 53, and gas (such as inert gas, preferably argon) is introduced into the second heater 53 to isolate the second heater 53 from the reaction gas, so as to protect the second heater 53 (a small amount of gas is introduced into the cavity of the second heater 53 in the supporting portion 51 to isolate the second heater 53 from the reaction gas, and the influence of the introduced gas on the heat generation of the second heater in this way is negligible), thereby prolonging the service life of the second heater. Besides deposition on the substrate in the epitaxial process, a large amount of particle deposition can be generated in the reaction cavity (such as the surface of the lining barrel), the deposition can be peeled off to form sheets or particles due to temperature rise/drop, the deposition falls on the bottom plate of the reaction cavity, a part of the deposition is discharged through the discharge port, and the deposition can easily enter the inside of the rotating part (but the hardness value of the particles is large, once the deposition enters the rotating part, the rotating part can cause rotary clamping and shaking or even clamping, the risk of flying out of the lining plate is increased), and the risk of flying out of the substrate (flying disc) is reduced by arranging a bottom sweeping component to prevent the deposition from diffusing into the rotating part.
In one embodiment, the gas purging system includes a baffle purge line 47, the gas outlet end of which is disposed at the connection between the lifting driving member 124 and the reaction chamber 10, so as to prevent the reaction gas from depositing at the connection, which may cause the blockage or blockage phenomenon in the lifting process of the baffle 123, and cause the failure of the robot to pick up and send the substrate tray, even the damage of the fingers of the robot or other parts.
In an embodiment, referring to fig. 1, 4 and 5, a fourth connecting plate 64, a third connecting plate 63, a second connecting plate 62 and a first connecting plate 61 are sequentially provided with a gas ring purge pipe 44 and a first heater purge pipe 45 in a penetrating manner, the gas ring purge pipe 44 extends from the connection of the first connecting plate 61 and the second connecting plate 62 to the inside of the reaction chamber 10, the gas outlet end of the gas ring purge pipe 44 is provided at the circumferential seam 74 between the first inner cylinder 141 and the second inner cylinder 142, and the annular uniform purge gas flows out from the circumferential seam 74 and flows (purges) to the third inner cylinder 143 along the surface 142a (also referred to as inner wall) of the second inner cylinder 142, and is discharged through the discharge port 115. In this way, the reaction gas can be effectively isolated from the inner wall of the liner 14, and the gas flowing along the surface 142a of the second inner cylinder 142 from the circumferential seam 74 forms turbulence, so that the reaction gas flows to the substrate side and is concentrated to the middle part, and meanwhile, the acting range of the outer ring region of the reaction gas can be compressed and expanded by adjusting the flow of the purge gas, thereby improving the utilization rate of the reaction gas and being beneficial to uniformly distributing the doping concentration of epitaxial growth.
In an embodiment, referring to fig. 1, 4 and 5, in order to improve the air tightness of the first sealing assembly, a pipe separation alignment structure is disposed between the first connection plate 61 and the second connection plate 62, specifically including an air channel 73 penetrating through the air inlet 71 of the first connection plate 61 and located on the mounting portion 141a of the first inner cylinder 141, the air channel 73 extends radially along the first inner cylinder 141, the air channel 73 has an air inlet 73b and an air outlet 73a, the air inlet 71 of the first connection plate 61 and the air inlet 73b of the air channel 73 are aligned with each other to form a complete air flow channel, the air outlet 73a of the air channel 73 faces the first surface 141b of the first inner cylinder 141, so that the purge gas (such as inert gas) flowing in from the air inlet 71 of the first connection plate 61 flows out through the air channel 73 and the air outlet 73a of the air channel 73 and flows out through the annular gap 74 of the first inner cylinder 141 and the second inner cylinder 142, and the air ring purge pipe 44 is connected to the air inlet 71 of the first connection plate 61, such that the gas flowing out of the air channel 44 flows along the air channel 73 and out of the inner cylinder 74 and out of the inner cylinder along the surface 142a (down the third exhaust port 115).
Further, the first connecting plate 61 is provided with a containing groove 72, the containing groove 72 is mutually communicated with the air inlet 71, the lower end face of the air inlet 71 is provided with a connecting air pipe 724 in a penetrating manner, the outer walls of the upper end and the lower end of the connecting air pipe 724 are respectively provided with a first boss 725 and a second boss 726, the first boss 725 is arranged in the containing groove 72, a fixing ring 728 is arranged between the first boss 725 and the inner side wall of the lower end face of the first connecting plate 61, the first boss 725 and the fixing ring 728 are mutually propped against each other in the state that the first sealing assembly is not aligned (as shown in fig. 5), the second boss 726 is arranged on the outer side of the lower end face of the first connecting plate 61, the connecting air pipe 724 can move up and down along the air inlet 71, and the first boss 725 and the second boss 726 play a limiting role.
As shown in fig. 1-5, a telescopic sealing compensation component 721 (such as a bellows) is disposed in the accommodating groove 72, a first flange 722 and a second flange 723 are disposed at the upper end and the lower end of the telescopic sealing compensation component 721, the first flange 722 is fixedly connected to the inner side wall of the upper end face of the first connecting plate 61, the first connecting plate 61 and the first boss 725 are mutually pushed (or fixedly connected), an elastic member 727 is sleeved in the circumferential direction of the telescopic sealing compensation component 721, the lower end face of the elastic member 727 is pushed to the upper surface of the second flange 723, a compression ring 75 is disposed on the upper end face of the elastic member 727, and the compression ring 75 is sleeved in the circumferential direction of the first flange 722.
In the non-aligned state, as shown in fig. 5, the elastic member 727 and the expansion seal compensation member 721 are both in a compressed state, so that the first boss 725 is ensured to be pushed against the inner side wall of the lower end face of the first connection plate 61. Once the conduits of the first connection plate 61 and the second connection plate 62 are aligned, as shown in fig. 4, that is, the air inlet 71 and the air duct 73 are aligned with each other, the second boss 726 is pressed down onto the air duct 73, and the first boss 725 compresses the expansion seal compensation member 721 and the elastic member 727 upward, so that tight connection between the first connection plate 61 and the second connection plate 62 is ensured.
Next, a method of purging the gas purging system when the thin film epitaxial device is in the closed state and in the open state will be described.
When the reaction chamber is in a closed state (see figure 1),
opening a vacuum suction valve, sucking air through an air suction pipeline to enable the first connecting plate and the second connecting plate of the first connecting part to be adsorbed in vacuum, enabling the third connecting plate and the fourth connecting plate of the second connecting part to be adsorbed in vacuum,
and respectively introducing purge gas into the reaction cavity based on the top purge component and the lateral purge component. In the method, the purge gas introduced into the top purge assembly and the side purge assembly may be an inert gas (e.g., argon). In the method, the air is extracted through the air extraction pipeline, so that a vacuum airtight space is formed in the double O-ring structure of the first connecting part and the second connecting part, pipelines among all gases are isolated, and leakage pollution is effectively prevented.
In one embodiment, when the reaction chamber is in a closed state, the method further comprises:
a rotary purge line based on the bottom purge assembly introduces purge gas to the rotary drive, and,
a purge gas is introduced to the second heater based on the second heater purge line. In the method, the purge gas introduced into the bottom purge assembly is an inert gas (such as argon). In the embodiment, the purging gas is continuously introduced into the reaction cavity through the shower head purging pipeline, the gas ring purging pipeline, the shell purging pipeline, the rotary purging pipeline, the first heater purging pipeline and the second heater purging pipeline, so that the diffusion of sediment or adsorbed impurities to the reaction channel during the epitaxial reaction can be reduced, the epitaxial quality is improved, and meanwhile, the maintenance cost of the thin film epitaxial equipment is reduced.
When the thin film epitaxy apparatus is in the first open cavity state (the first connection part is separated), the flow direction of the purge gas is as shown in fig. 2, and the purge method comprises:
opening a cavity opening purging valve, introducing purging gas (such as argon) into the spray header based on the cavity opening purging pipeline, and simultaneously purging gas based on the shell purging pipeline, the baffle purging pipeline, the rotary purging pipeline and the second heater purging pipeline. Preferably, in this embodiment, the vacuum suction valve is closed and the inflation valve is opened. The upper and lower parts of the reaction chamber are separated and are provided with purge gas. The purging gas is introduced into the spray header to prevent the atmospheric environment atmosphere from diffusing into the spray header, so that the cleanliness of the spray header in the open cavity state is ensured, and the open cavity is not polluted by water vapor and impurities in the atmospheric environment (the water vapor or impurities in the atmospheric environment enter the spray header and enter the reaction cavity along with the gas when the subsequent epitaxial growth is carried out, so that the epitaxial growth quality is not affected). The shell purging pipeline, the baffle purging pipeline, the rotary purging pipeline and the purging gas of the second heater purging pipeline are utilized to purge the lower cavity of the reaction cavity, so that water vapor or impurities in the atmosphere are prevented from diffusing to the inside of the cavity.
When the thin film epitaxy apparatus is in the second open cavity state (the first connecting part is connected and the second connecting part is separated), the flow direction of the purge gas is as shown in fig. 3, and the purge method comprises the following steps:
Opening a cavity opening purging valve, introducing purging gas (such as argon) into the spray header based on the cavity opening purging pipeline, and simultaneously purging gas based on the shell purging pipeline, the baffle purging pipeline, the rotary purging pipeline and the second heater purging pipeline. Preferably, in this embodiment, the vacuum suction valve is closed and the inflation valve is opened. The upper and lower parts of the reaction chamber are separated and are provided with purge gas. The purging gas is introduced into the spray header to prevent the atmospheric environment atmosphere from diffusing into the spray header, so that the cleanliness of the spray header in the open cavity state is ensured, and the open cavity is not polluted by water vapor and impurities in the atmospheric environment (the water vapor or impurities in the atmospheric environment enter the spray header and enter the reaction cavity along with the gas when the subsequent epitaxial growth is carried out, so that the epitaxial growth quality is not affected). The shell purging pipeline, the baffle purging pipeline, the rotary purging pipeline and the purging gas of the second heater purging pipeline are utilized to purge the lower cavity of the reaction cavity, so that water vapor or impurities in the atmosphere are prevented from diffusing to the inside of the cavity.
When the thin film epitaxy apparatus is in the third open cavity state (the first connection portion is separated, the second connection portion is separated),
opening a cavity opening purging valve, introducing purging gas (such as argon) into the spray header based on the cavity opening purging pipeline, and simultaneously purging gas based on the shell purging pipeline, the baffle purging pipeline, the rotary purging pipeline and the second heater purging pipeline. Preferably, in this embodiment, the vacuum suction valve is closed and the inflation valve is opened.
In the above embodiment, the first cavity opening state, the second cavity opening state, and the third cavity opening state are collectively referred to as cavity opening states.
It should be noted that, the technical features of the foregoing embodiments, such as "the casing", "the liner tube", "the lateral purge component", "the top purge component", "the open cavity purge component", "the bottom purge component", "the first heater", "the second heater", "the first connection portion", "the second connection portion", etc., may be arbitrarily combined, and for brevity of description, all possible combinations of the technical features of the foregoing embodiments are not described, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the disclosure.
The foregoing embodiments are provided to illustrate the technical concept and features of the present application and are intended to enable those skilled in the art to understand the contents of the present application and implement the same according to the contents, and are not intended to limit the scope of the present application. All such equivalent changes and modifications as come within the spirit of the disclosure are desired to be protected.
Claims (6)
1. A gas purging system for a thin film epitaxy apparatus for use in a silicon carbide epitaxy apparatus, the thin film epitaxy apparatus comprising: the reaction cavity comprises a columnar shell and a lining barrel, the lining barrel is positioned at the inner side of the shell, the lining barrel comprises a first inner barrel, a second inner barrel and a third inner barrel which are coaxially arranged, a gap is reserved between one side of the first inner barrel, which is close to the spray head, and a discharge port is formed in the bottom of the reaction cavity;
An insulation layer is arranged between the shell and the lining barrel, a first heater is arranged between the insulation layer and the lining barrel, and the first heater extends along the axial direction of the shell;
the spray header is arranged at the top of the shell; the material carrying part is arranged at the bottom side in the shell and is opposite to the spray header, the material carrying part comprises a supporting part for placing a substrate, and a second heater is arranged in the supporting part;
the gas purging system includes:
the top purging component comprises a spray header purging pipeline, wherein the spray header purging pipeline is communicated with the spray header, and the top purging component further comprises a temperature measuring port purging pipeline which is communicated with a temperature measuring port on the spray header and used for introducing purging gas into the temperature measuring port;
the lateral purging component comprises a gas ring purging pipeline and a shell purging pipeline, the gas outlet end of the gas ring purging pipeline is positioned in the shell and close to the side of the spray header, the introduced purging gas flows towards the material carrying part along the surface of the lining barrel, which is far away from the side of the shell, the shell purging pipeline comprises a plurality of branches, the gas outlet ends of the branches are communicated to the inner side of the shell so as to introduce the purging gas into the shell, and the introduced purging gas flows towards the material carrying part along a gap between the shell and the heat insulation layer; the open cavity purging component comprises an open cavity purging pipeline, a open cavity purging valve is arranged on the open cavity purging pipeline, the open cavity purging pipeline is communicated to the spray header and is matched and communicated with the spray header purging pipeline and an air inlet pipeline of the spray header,
The bottom purging component comprises a rotary purging pipeline and a second heater purging pipeline, the air outlet end of the rotary purging pipeline is communicated with a rotary driving piece, and the rotary driving piece is connected with the supporting part; the air outlet end of the second heater purging pipeline is communicated with the supporting part, purging gas which is blown to the second heater is introduced into the supporting part,
the gas ring purging pipeline comprises a first gas ring pipeline and a second gas ring pipeline, the first gas ring pipeline and the second gas ring pipeline are spliced through a first connecting part, the first connecting part comprises a first connecting plate connected to the spray header and a second connecting plate connected to one end of the shell close to the spray header,
the housing includes a first housing and a second housing,
the second gas ring pipeline comprises a first sub pipeline and a second sub pipeline, the first sub pipeline and the second sub pipeline are spliced through a second connecting part, and the second connecting part comprises a third connecting plate connected to the first shell and a fourth connecting plate connected to the second shell.
2. A gas purging system as claimed in claim 1, wherein,
the side direction sweeps the subassembly still includes first heater and sweeps the pipeline, first heater sweeps the pipeline and passes second connecting portion and first connecting portion, its end intercommunication of giving vent to anger to first heater is close to one side of shower head.
3. A gas purging system as claimed in claim 2, wherein,
the heat preservation corresponds second connecting portion position department split and becomes first heat preservation and second heat preservation, the bottom of second heat preservation passes through the baffle and connects the lift driving piece, the lift driving piece is connected the baffle and is swept the pipeline.
4. A purging method using the gas purging system of the thin film epitaxy apparatus according to any one of claims 1 to 3, the gas purging system further comprising a suction line on which a vacuum suction valve is provided, the suction line being connected to the first connection portion and the second connection portion, characterized in that:
when the reaction cavity is in a closed state,
opening a vacuum suction valve, exhausting air based on an air exhausting pipeline to enable the first connecting part and the second connecting part to be connected in a sealing way,
and respectively introducing purge gas into the reaction cavity based on the top purge component and the lateral purge component.
5. A purging method using the gas purging system of the thin film epitaxy apparatus of any one of claims 1 to 3, the thin film epitaxy apparatus comprising: the reaction cavity comprises a shell and a lining barrel, wherein the shell comprises a first shell and a second shell;
an insulating layer is arranged between the shell and the lining barrel;
The spray header is arranged at the top of the reaction cavity;
the material carrying part is arranged at the bottom of the reaction cavity and is opposite to the spray header, the material carrying part comprises a supporting part for placing a substrate, and a second heater is arranged in the supporting part;
a first connection part including a first connection plate connected to the showerhead and a second connection plate connected to a second connection plate provided to the housing; a kind of electronic device with high-pressure air-conditioning system
A second connecting part comprising a third connecting plate arranged on the first shell and a fourth connecting plate arranged on the second shell,
the gas purging system includes:
the open-cavity purging pipeline is communicated to the spray header;
the side direction sweeps the subassembly, and it includes the casing and sweeps the pipeline, the casing sweeps the pipeline and includes a plurality of branches, the end of giving vent to anger of branch road all communicates to the inboard of casing, its characterized in that:
when the reaction cavity is in a first cavity opening state, the first connecting part is disconnected, and the method comprises the following steps:
opening a cavity opening purging valve, introducing purging gas to the spray header based on a cavity opening purging pipeline,
simultaneously, based on the fact that the shell purging pipeline is used for introducing purging gas into the shell, the baffle purging pipeline is used for introducing purging gas into the joint of the lifting driving piece and the reaction cavity, the rotary purging pipeline is used for introducing purging gas into the rotary driving piece, and the second heater purging pipeline is used for introducing purging gas into the second heater.
6. The purge method of claim 5, wherein: when the reaction cavity is in a second cavity opening state, the first connecting part and the second connecting part are disconnected, and the method comprises the following steps:
the open-cavity purge valve is opened,
purge gas is introduced into the spray header based on the open-cavity purge pipeline,
simultaneously, based on the shell purging pipeline, purging gas is introduced into the second shell, the baffle purging pipeline is used for introducing purging gas into the joint of the lifting driving piece and the reaction cavity, the rotary purging pipeline is used for introducing purging gas into the rotary driving piece, and the second heater purging pipeline is used for introducing purging gas into the second heater.
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| CN202311328751.1A CN117089927B (en) | 2023-10-14 | 2023-10-14 | Gas purging system and purging method of film epitaxy equipment |
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| CN117089927A (en) | 2023-11-21 |
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