CN113088928A - Inner cylinder wall blowing device - Google Patents
Inner cylinder wall blowing device Download PDFInfo
- Publication number
- CN113088928A CN113088928A CN201911335218.1A CN201911335218A CN113088928A CN 113088928 A CN113088928 A CN 113088928A CN 201911335218 A CN201911335218 A CN 201911335218A CN 113088928 A CN113088928 A CN 113088928A
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- China
- Prior art keywords
- inner cylinder
- cylinder wall
- air inlet
- hole
- gas
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- 238000007664 blowing Methods 0.000 title claims description 11
- 239000007789 gas Substances 0.000 claims abstract description 33
- 238000006243 chemical reaction Methods 0.000 claims abstract description 29
- 239000012495 reaction gas Substances 0.000 claims abstract description 17
- 238000010926 purge Methods 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000010408 sweeping Methods 0.000 claims abstract description 4
- 230000007423 decrease Effects 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 4
- 230000002035 prolonged effect Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000013049 sediment Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses an inner cylinder wall purging device, which comprises: a reaction chamber; a gas inlet showerhead disposed at the top of the reaction chamber for supplying a reaction gas toward the substrate on the tray in the reaction chamber; the inner cylinder is arranged in the reaction chamber and is positioned between the air inlet nozzle and the tray; the air inlet ring is connected with the upper end of the inner cylinder, and an annular cavity and an annular slit communicated with the annular cavity are formed between the air inlet ring and the inner cylinder wall of the inner cylinder; and one end of the air inlet pipe is connected with the air inlet ring and used for providing sweeping gas for the annular cavity, and the other end of the air inlet pipe extends out of the reaction cavity. When the reaction gas flows downwards from the gas inlet nozzle, the purging gas simultaneously enters an annular cavity formed by the gas inlet ring and the inner cylinder from the gas inlet pipe, flows out from an annular slit communicated with the annular cavity, and then flows downwards along the inner cylinder wall, the purging gas and the reaction gas flow downwards in parallel and are in a advection state, so that a gas curtain is formed near the inner cylinder wall, and the gas curtain can effectively prevent the reaction gas from contacting with the inner cylinder wall.
Description
Technical Field
The invention relates to the technical field of Chemical Vapor Deposition (CVD) equipment, in particular to an inner cylinder wall purging device for CVD equipment.
Background
CVD (chemical vapor Deposition) refers to a process in which vapor containing a gaseous reactant or a liquid reactant constituting a thin film element and other gases required for reaction are introduced into a reaction chamber to cause a chemical reaction on the surface of the substrate to form a thin film. CVD equipment is used to prepare compound semiconductor materials or other thin film materials, such as: GaN, SiC, ZnO, thin film solar cells, and the like. Currently, in a CVD apparatus for epitaxial growth of SiC single crystal material, there are two types of reaction chambers: cold wall systems and hot wall systems. The reaction principle is that reaction gas flows through the surface of a substrate (namely a substrate) heated to the reaction temperature, and chemical reaction is carried out to generate the SiC single crystal film. The hot wall system has the advantages of uniform temperature, good film thickness consistency, rapid heating and the like in the SiC growth process, and is widely applied. The reaction cavity of the existing vertical equipment is internally provided with an inner cylinder, and when reaction gas is conveyed downwards to a substrate, deposition can be generated on the inner cylinder wall of the inner cylinder to generate SiC particles. The SiC particles need to be cleaned frequently, otherwise, the substrate is polluted; the sediment on the inner cylinder wall can fall off and fall on the substrate in the process of process operation, and the quality of epitaxial growth is influenced; certain raw material gas is consumed in the inner cylinder wall deposition process, so that the production cost is increased; the inner cylinder is damaged by the sediment on the wall of the inner cylinder, and the service life of the inner cylinder is shortened.
Disclosure of Invention
The invention aims to provide an inner cylinder wall blowing device to solve the technical problem.
In order to solve the technical problem, one technical scheme adopted by the invention is to provide an inner cylinder wall purging device, which comprises:
a reaction chamber;
the gas inlet nozzle is arranged at the top of the reaction chamber and used for supplying reaction gas to the substrate on the tray in the reaction chamber;
the inner cylinder is arranged in the reaction chamber and is positioned between the air inlet nozzle and the tray;
the air inlet ring is connected with the upper end of the inner cylinder, and an annular cavity and an annular slit communicated with the annular cavity are formed between the air inlet ring and the inner cylinder wall of the inner cylinder;
and one end of the air inlet pipe is connected with the air inlet ring and used for providing sweeping gas for the annular cavity, and the other end of the air inlet pipe extends out of the reaction cavity.
In an embodiment of the present invention, at least 3 air inlet pipes are uniformly distributed on the same circumference of the upper portion of the air inlet ring.
In a specific embodiment of the present invention, the air inlet ring includes a body, an upper hole is formed in an upper portion of the body, a lower hole is formed in a lower portion of the body, a transverse hole is formed in the body, one end of the transverse hole is communicated with the upper hole, and the other end of the transverse hole is communicated with the lower hole; the air inlet pipe is connected with the upper hole, and the annular cavity is communicated with the lower hole.
In an embodiment of the present invention, the upper hole is opened in an upper portion of the body along a center line direction of the body, the lower hole is opened in a lower portion of the body along the center line direction of the body, the lower hole is located inside the upper hole, and the transverse hole is opened inside the body along a diameter direction of the body.
In a specific embodiment of the present invention, the transverse hole is a blind hole, and is formed in a side wall of the body along a diameter direction of the body, and a plug is disposed outside the transverse hole.
In an embodiment of the invention, the upper part of the body is provided with a guide part, and the upper end of the guide part is in contact connection with the air inlet nozzle.
In an embodiment of the present invention, the guide portion is a cylindrical thin wall.
In a specific embodiment of the present invention, a forming portion is disposed at a lower portion of the body, one side of the forming portion close to the inner cylinder wall includes a first annular surface and an outer conical surface, the outer conical surface is disposed at a lower end of the first annular surface, a distance between the first annular surface and the inner cylinder wall is constant, and a distance between the outer conical surface and the inner cylinder wall gradually decreases from top to bottom so that the annular slit is formed between the lower end of the forming portion and the inner cylinder.
In a specific embodiment of the present invention, one side of the forming portion close to the inner cylinder wall further includes a second annular surface, the second annular surface is disposed at a lower end of the outer conical surface, and a distance between the second annular surface and the inner cylinder wall is constant.
In an embodiment of the invention, a side of the forming portion away from the inner cylinder wall is an inner conical surface, and a distance between the inner conical surface and the inner cylinder wall gradually decreases from top to bottom.
The invention has the advantages that:
different from the prior art, by applying the technical scheme of the invention, when the reaction gas flows downwards from the gas inlet nozzle, the purging gas simultaneously enters the annular cavity formed by the gas inlet ring and the inner cylinder from the gas inlet pipe, flows out from the annular slit communicated with the annular cavity, and then flows downwards along the wall of the inner cylinder, and the purging gas and the reaction gas flow downwards in parallel to form a advection state, so that a gas curtain is formed near the wall of the inner cylinder, the gas curtain can effectively prevent the reaction gas from contacting with the wall of the inner cylinder, the cleaning period is greatly prolonged, the pollution of particles to the substrate is reduced, the epitaxial growth quality is improved, the utilization rate of raw materials is improved, and the production cost is reduced. In addition, the inner cylinder wall deposits are reduced, so that the service life of the inner cylinder is prolonged.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic cross-sectional view of an inner cartridge wall purging device of the present invention;
FIG. 2 is an enlarged schematic view of the structure within circle A of FIG. 1;
fig. 3 is a schematic structural diagram of an air inlet ring and an air curtain formed by the air inlet ring of the inner cylinder wall blowing device.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "axial", "radial", "circumferential", and the like, indicate orientations and positional relationships based on the orientations and positional relationships shown in the drawings, and are used merely for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the device or element so referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Referring to fig. 1-3, an embodiment of the inner cylindrical wall purging device of the present invention comprises: reaction chamber 11, inlet nozzle 10, inlet ring 2, inner tube 5 and inlet pipe 1. A gas inlet showerhead 10 is provided at the top of the reaction chamber 11 for supplying a reaction gas toward the substrate on the tray 12 within the reaction chamber 11. And the inner cylinder 5 is arranged in the reaction chamber 11 and is positioned between the gas inlet nozzle 10 and the tray 12. The air inlet ring 2 is connected with the upper end of the inner cylinder 5, and an annular cavity 8 and an annular slit 9 communicated with the annular cavity 8 are formed between the air inlet ring and the inner cylinder wall of the inner cylinder 5. One end of the gas inlet pipe 1 is connected with the gas inlet ring 2 and used for providing purging gas for the annular cavity 8, and the other end of the gas inlet pipe 1 extends out of the reaction chamber 11.
Use the technical scheme of this embodiment, when reaction gas flows down from inlet nozzle 10, sweep gas simultaneously from intake pipe 1 entering into the annular chamber 8 that inlet ring 2 and inner tube 5 formed, and flow out from the annular slit 9 with 8 intercommunications in annular chamber, then flow down along the inner tube wall, sweep gas and the parallel downward flow of reaction gas, for the advection state, thereby form an air curtain 13 near the inner tube wall, air curtain 13 can effectively prevent reaction gas and the contact of inner tube wall, greatly prolonged the clearance cycle, the pollution of particulate matter to the substrate has been reduced, the quality of epitaxial growth has been improved, and improve the utilization ratio of raw and other materials, and the production cost is reduced. In addition, the inner cylinder wall deposits are reduced, so that the service life of the inner cylinder 5 is prolonged.
In one embodiment, there are at least 3 inlet pipes 1, which are evenly distributed on the same circumference of the upper part of the inlet ring 2. Through setting up 3 at least evenly distributed's intake pipe 1, can evenly spread the sweep gas in annular chamber 8, make the air current that flows out annular slit 9 more even to the effect of sweeping has been improved.
In one embodiment, the air inlet ring 2 comprises a body 22, an upper hole 3 is formed in the upper part of the body 22, a lower hole 7 is formed in the lower part of the body 22, a transverse hole 6 is formed in the body 22, one end of the transverse hole 6 is communicated with the upper hole 3, and the other end of the transverse hole 6 is communicated with the lower hole 7. The air inlet pipe 1 is connected with the upper hole 3, and the annular cavity 8 is communicated with the lower hole 7. In practical implementation, the upper hole 3 is opened in the upper part of the body 22 along the center line direction of the body 22, the lower hole 7 is opened in the lower part of the body 22 along the center line direction of the body 22, the lower hole 7 is located inside the upper hole 3, and the transverse hole 6 is opened in the inner part of the body 22 along the diameter direction of the body 22.
Further, in order to facilitate the opening of the transverse hole 6, the transverse hole 6 may be formed in a side wall of the body 22 along a diameter direction of the body 22, the transverse hole 6 is a blind hole, and a plug 4 is disposed outside the transverse hole 6.
Further, the upper portion of the main body 22 is provided with a guide portion 21, and the upper end of the guide portion 21 is in contact connection with the gas inlet showerhead 10 for guiding the reaction gas flowing out from the gas inlet showerhead 10 into the inner cylinder 5, thereby preventing the reaction gas from diffusing to other positions of the reaction chamber 11. In actual practice, the guide portion 21 is cylindrical and thin.
Further, the lower part of the body 22 is provided with a forming part 23, one side of the forming part 23 close to the inner cylinder wall comprises a first annular surface and an outer conical surface, the outer conical surface is arranged at the lower end of the first annular surface, the distance between the first annular surface and the inner cylinder wall is not changed, and the distance between the outer conical surface and the inner cylinder wall gradually decreases from top to bottom, so that an annular slit 9 is formed between the lower end of the forming part 23 and the inner cylinder 5. By providing the first annular surface and the outer conical surface, the annular chamber 8 and the annular slit 9 can be formed between the formation portion 23 and the inner cylinder 5.
Further, one side of the forming part 23 close to the inner cylinder wall further comprises a second annular surface, the second annular surface is arranged at the lower end of the outer conical surface, and the distance between the second annular surface and the inner cylinder wall is unchanged.
Further, one side of the forming portion 23 away from the inner cylinder wall is an inner conical surface, and the distance between the inner conical surface and the inner cylinder wall gradually decreases from top to bottom. Specifically, the conicity of the inner circular conical surface and the outer circular conical surface is equal.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (10)
1. An inner cylinder wall purging device, comprising:
a reaction chamber;
the gas inlet nozzle is arranged at the top of the reaction chamber and used for supplying reaction gas to the substrate on the tray in the reaction chamber;
the inner cylinder is arranged in the reaction chamber and is positioned between the air inlet nozzle and the tray;
the air inlet ring is connected with the upper end of the inner cylinder, and an annular cavity and an annular slit communicated with the annular cavity are formed between the air inlet ring and the inner cylinder wall of the inner cylinder;
and one end of the air inlet pipe is connected with the air inlet ring and used for providing sweeping gas for the annular cavity, and the other end of the air inlet pipe extends out of the reaction cavity.
2. The inner cylindrical wall blowing device according to claim 1, wherein at least 3 air inlet pipes are uniformly distributed on the same circumference of the upper part of the air inlet ring.
3. The inner cylinder wall blowing device as claimed in claim 1, wherein the air inlet ring comprises a body, an upper hole is formed in the upper part of the body, a lower hole is formed in the lower part of the body, a transverse hole is formed in the body, one end of the transverse hole is communicated with the upper hole, and the other end of the transverse hole is communicated with the lower hole; the air inlet pipe is connected with the upper hole, and the annular cavity is communicated with the lower hole.
4. The inner cylinder wall purging device as claimed in claim 3, wherein the upper hole is formed in an upper portion of the body along a center line direction of the body, the lower hole is formed in a lower portion of the body along the center line direction of the body, the lower hole is located inside the upper hole, and the transverse hole is formed inside the body along a diameter direction of the body.
5. The inner cylinder wall blowing device as claimed in claim 3, wherein the transverse hole is a blind hole and is formed in the side wall of the body in the diameter direction of the body, and a plug is arranged outside the transverse hole.
6. The inner cylinder wall blowing device as claimed in claim 3, wherein a guide part is arranged at the upper part of the body, and the upper end of the guide part is in contact connection with the air inlet nozzle.
7. The inner cartridge wall purging device as claimed in claim 6, wherein the guiding portion is cylindrical thin-walled.
8. The inner cylinder wall blowing device according to claim 3, wherein the lower part of the body is provided with a forming part, one side of the forming part, which is close to the inner cylinder wall, comprises a first annular surface and an outer conical surface, the outer conical surface is arranged at the lower end of the first annular surface, the distance between the first annular surface and the inner cylinder wall is constant, and the distance between the outer conical surface and the inner cylinder wall gradually decreases from top to bottom so that the annular slit is formed between the lower end of the forming part and the inner cylinder.
9. The inner cylinder wall blowing device according to claim 8, wherein one side of the forming part close to the inner cylinder wall further comprises a second annular surface, the second annular surface is arranged at the lower end of the outer conical surface, and the distance between the second annular surface and the inner cylinder wall is constant.
10. The inner cylinder wall blowing device according to claim 8, wherein the side of the forming part away from the inner cylinder wall is an inner conical surface, and the distance between the inner conical surface and the inner cylinder wall gradually decreases from top to bottom.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911335218.1A CN113088928A (en) | 2019-12-23 | 2019-12-23 | Inner cylinder wall blowing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911335218.1A CN113088928A (en) | 2019-12-23 | 2019-12-23 | Inner cylinder wall blowing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113088928A true CN113088928A (en) | 2021-07-09 |
Family
ID=76662875
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911335218.1A Pending CN113088928A (en) | 2019-12-23 | 2019-12-23 | Inner cylinder wall blowing device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113088928A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115011948A (en) * | 2022-08-05 | 2022-09-06 | 拓荆科技(北京)有限公司 | Device for improving granularity of thin film and gas conveying method thereof |
| CN117089927A (en) * | 2023-10-14 | 2023-11-21 | 芯三代半导体科技(苏州)有限公司 | Gas purging system and purging method of film epitaxy equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1166540A (en) * | 1996-01-30 | 1997-12-03 | 西门子公司 | Method and apparatus for producing silicon carbide by chemical vapour-deposition |
| KR20070098104A (en) * | 2006-03-31 | 2007-10-05 | 삼성전자주식회사 | Thinfilm deposition apparatus having gas curtain |
| CN101665918A (en) * | 2008-09-05 | 2010-03-10 | 东京毅力科创株式会社 | Film forming method and film forming apparatus |
| US20110265710A1 (en) * | 2010-04-30 | 2011-11-03 | Kunihiko Suzuki | Film forming apparatus and method |
| KR20130026398A (en) * | 2011-09-05 | 2013-03-13 | 엘아이지에이디피 주식회사 | Showerhead and chemical vapor deposition apparatus |
| CN103805964A (en) * | 2012-11-02 | 2014-05-21 | 财团法人工业技术研究院 | Gas spraying device capable of generating gas curtain and film deposition device thereof |
| CN104508190A (en) * | 2012-05-25 | 2015-04-08 | 索尔伏打电流公司 | Concentric flow reactor |
| CN211170882U (en) * | 2019-12-23 | 2020-08-04 | 上海思擎企业管理合伙企业(有限合伙) | Inner cylinder wall blowing device |
-
2019
- 2019-12-23 CN CN201911335218.1A patent/CN113088928A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1166540A (en) * | 1996-01-30 | 1997-12-03 | 西门子公司 | Method and apparatus for producing silicon carbide by chemical vapour-deposition |
| KR20070098104A (en) * | 2006-03-31 | 2007-10-05 | 삼성전자주식회사 | Thinfilm deposition apparatus having gas curtain |
| CN101665918A (en) * | 2008-09-05 | 2010-03-10 | 东京毅力科创株式会社 | Film forming method and film forming apparatus |
| US20110265710A1 (en) * | 2010-04-30 | 2011-11-03 | Kunihiko Suzuki | Film forming apparatus and method |
| KR20130026398A (en) * | 2011-09-05 | 2013-03-13 | 엘아이지에이디피 주식회사 | Showerhead and chemical vapor deposition apparatus |
| CN104508190A (en) * | 2012-05-25 | 2015-04-08 | 索尔伏打电流公司 | Concentric flow reactor |
| CN103805964A (en) * | 2012-11-02 | 2014-05-21 | 财团法人工业技术研究院 | Gas spraying device capable of generating gas curtain and film deposition device thereof |
| CN211170882U (en) * | 2019-12-23 | 2020-08-04 | 上海思擎企业管理合伙企业(有限合伙) | Inner cylinder wall blowing device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115011948A (en) * | 2022-08-05 | 2022-09-06 | 拓荆科技(北京)有限公司 | Device for improving granularity of thin film and gas conveying method thereof |
| CN117089927A (en) * | 2023-10-14 | 2023-11-21 | 芯三代半导体科技(苏州)有限公司 | Gas purging system and purging method of film epitaxy equipment |
| CN117089927B (en) * | 2023-10-14 | 2024-01-23 | 芯三代半导体科技(苏州)有限公司 | Gas purging system and purging method of film epitaxy equipment |
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