KR20070098104A - Thinfilm deposition apparatus having gas curtain - Google Patents

Thinfilm deposition apparatus having gas curtain Download PDF

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Publication number
KR20070098104A
KR20070098104A KR1020060029340A KR20060029340A KR20070098104A KR 20070098104 A KR20070098104 A KR 20070098104A KR 1020060029340 A KR1020060029340 A KR 1020060029340A KR 20060029340 A KR20060029340 A KR 20060029340A KR 20070098104 A KR20070098104 A KR 20070098104A
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South Korea
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gas
chamber
gas curtain
thin film
deposition apparatus
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KR1020060029340A
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Korean (ko)
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김영도
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삼성전자주식회사
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Publication of KR20070098104A publication Critical patent/KR20070098104A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus

Abstract

A thin film deposition apparatus having a gas curtain is provided to improve the quality of the film and maximize the processing efficiency by supplying the inactive gas to the inside of a chamber through dually formed gas curtain holes. A thin film deposition apparatus(100) includes a chamber(110), a susceptor(130), a chamber lead(120), a shower head(140), and a gas curtain(150). The susceptor(130) for mounting a wafer is installed inside the chamber(110). The chamber lead(120) seals the chamber(110) and is positioned an upper side of the susceptor(130). The shower head(140) is installed in the chamber lead(120) and supplies processing gas to the inside of the chamber(110). The gas curtain(150) is installed with a shape surrounding the shower head(140), and comprises a plurality of first gas curtain holes(152) formed in a columnar direction and a plurality of second gas curtain holes(154) formed in the columnar direction inside the first gas curtain holes(152).

Description

가스커튼을 구비한 박막증착장치{thinfilm deposition apparatus having gas curtain}Thin film deposition apparatus having gas curtain

도 1은 본 발명의 일실시예에 따른 가스커튼을 구비한 박막증착장치를 나타낸 단면도이다.1 is a cross-sectional view showing a thin film deposition apparatus having a gas curtain according to an embodiment of the present invention.

도 2는 도 1의 가스커튼을 나타낸 사시도이다.FIG. 2 is a perspective view illustrating the gas curtain of FIG. 1. FIG.

도 3은 도 2의 Ⅰ-Ⅰ′ 선을 따라 취해진 단면도이다.3 is a cross-sectional view taken along the line II ′ of FIG. 2.

도 4는 본 발명에 따른 가스커튼의 다른 실시예를 나타낸 단면도이다.4 is a cross-sectional view showing another embodiment of a gas curtain according to the present invention.

**도면의 주요 부분에 대한 부호의 설명**** Description of the symbols for the main parts of the drawings **

100 : 박막증착장치100: thin film deposition apparatus

110 : 챔버110: chamber

116 : 진공배기유닛116: vacuum exhaust unit

120 : 챔버리드120: chamber lead

130 : 서셉터130: susceptor

140 : 샤워헤드140: shower head

142 : 제 1가스공급홀142: first gas supply hole

144 : 제 2가스공급홀144: second gas supply hole

150 : 가스커튼150: gas curtain

152 : 제 1가스커튼홀152: first gas curtain hole

154 : 제 2가스커튼홀154: second gas curtain hole

156 : 가스 공급관156: gas supply pipe

본 발명은 박막증착장치에 관한 것으로, 더욱 상세하게는 가스커튼을 구비한 박막증착장치에 관한 것이다.The present invention relates to a thin film deposition apparatus, and more particularly to a thin film deposition apparatus having a gas curtain.

반도체소자를 제조하는 공정 중 박막증착 공정으로 현재 사용되고 있는 가장 일반적인 방법 중 하나는 화학기상증착(Chemical Vapour Deposition : 이하 CVD라 한다.) 방법이 사용되고 있는데, 상기 CVD방법을 통하여 구현된 박막은 막내의 불순물 함유량이 다소 높은 문제를 가지고 있어, 보다 개선된 박막형성방법이 연구되었고 이에 따라 개발된 방법이 원자층 증착(Atomic Layer Deposition : 이하 ALD라 한다)방법이다.One of the most common methods currently used as a thin film deposition process in the process of manufacturing a semiconductor device is a chemical vapor deposition (CVD) method, a thin film implemented through the CVD method Since the impurity content is rather high, an improved thin film formation method has been studied, and the developed method is an atomic layer deposition method (hereinafter referred to as ALD).

상기 ALD법은 기존의 CVD법과 달리 자기제한적 반응(self-limiting reaction)에 의하여 반응가스가 기판 표면에서만 반응하고 가스와 가스간에는 반응하지 않는다. 따라서 박막의 조성 정밀제어가 쉽고, 파티클 발생이 없으며, 박막 증착시 균일성이 우수하고, 박막 두께의 정밀 조절이 용이한 장점이 있다. 더구나, 향후 반도체 장치의 디자인 룰(design rule)이 축소됨에 따라 ALD 방식의 박막 증 착공정은 더욱 더 중요한 공정으로 부각될 것으로 예상된다.Unlike the conventional CVD method, the ALD method reacts the reaction gas only on the surface of the substrate by a self-limiting reaction and does not react between the gas and the gas. Therefore, it is easy to precisely control the composition of the thin film, there is no particle generation, excellent uniformity during thin film deposition, and there is an advantage in that the precise control of the thin film thickness is easy. In addition, as the design rule of semiconductor devices is reduced in the future, the ALD thin film deposition process is expected to become a more important process.

박막증착장치는 일반적으로 증착공정이 이루어지는 챔버와 상기 챔버를 밀봉시키는 챔버리드로 이루어져 있다. ALD 방법에 의한 박막증착장치는 오존과 TMA(TriMethylAluminum)를 이용하여 기판에 알루미늄 산화막을 증착하기 위한 것으로서, 증착 공정 진행시에 상기 챔버리드의 중앙에 장착된 샤워헤드를 통해서 공정가스를 공급하는 과정에서 챔버 내부에 미반응 공정가스의 응착을 방지하도록 가스커튼이 상기 샤워헤드를 감싸도록 설치될 수 있다.The thin film deposition apparatus generally includes a chamber in which a deposition process is performed and a chamber lead for sealing the chamber. A thin film deposition apparatus using the ALD method is to deposit an aluminum oxide film on the substrate using ozone and TMA (TriMethylAluminum), the process of supplying the process gas through the shower head mounted in the center of the chamber lead during the deposition process The gas curtain may be installed to surround the shower head to prevent adhesion of unreacted process gas inside the chamber.

상기 가스커튼은 아르곤가스와 같은 불활성가스를 웨이퍼의 외측으로 공급시킴으로써 상기의 응착방지 역할 뿐 아니라 챔버 벽에 부착되어 있던 파티클이 공정 진행 중에 웨이퍼로 유입되는 것을 방지하는 역할도 하게 된다.The gas curtain supplies an inert gas such as argon gas to the outside of the wafer to prevent adhesion of the particles as well as to prevent particles adhering to the chamber wall from entering the wafer during the process.

그런데, 종래 기술에 의한 박막증착장치의 경우는 상기 가스커튼 상에 형성된 홀과 샤워헤드 상에 형성된 홀과의 사이에 이격거리가 존재함으로써 여유공간이 발생하게 되는데, 상기 여유공간은 공정이 진행되는 도중에 공정가스가 배기라인 측으로 흐를 수 있도록 통로 역할을 하게 된다.By the way, in the case of the thin film deposition apparatus according to the prior art, the clearance is generated by the separation distance between the hole formed on the gas curtain and the hole formed on the shower head. It serves as a passageway so that process gas can flow to the exhaust line.

상기와 같은 구조상의 문제로 인해 웨이퍼로 유입되어 도핑되어야 할 공정가스가 웨이퍼에 응착이 되지 않고 배기가스 라인으로 벤트(vent)되는 현상으로 인해 웨이퍼 박막의 두께가 얇아질 수 있어서 박막의 품질을 저하시키는 결과를 가져오게 된다. 또한, 미반응 공정가스가 챔버 벽에 과다 응착이 된 상태로 파우더 및 파티클 등이 발생되어 공정 진행중인 웨이퍼에 안착되어 품질불량을 유발할 수 있다.Due to the above structural problem, the process gas to be doped into the wafer to be doped does not adhere to the wafer but is vented to the exhaust gas line, resulting in a thin film thickness. Will result in In addition, powder and particles may be generated in a state in which unreacted process gas is excessively adhered to the chamber wall, and may be deposited on a wafer in process, causing quality defects.

본 발명은 상기와 같은 종래 기술의 단점을 극복하기 위해 안출된 것으로서, 본 발명의 목적은 상기의 여유공간에 형성된 홀을 통해 불활성가스를 공급시킴으로써 공정가스가 웨이퍼에 미반응 상태로 배기되는 양을 줄이는 데에 그 목적이 있다.The present invention has been made to overcome the disadvantages of the prior art as described above, an object of the present invention is to supply an inert gas through the hole formed in the clearance to the amount that the process gas is exhausted to the wafer unreacted state The purpose is to reduce.

상기와 같은 목적을 구현하기 위한 본 발명의 일 실시예에 따른 박막증착장치는 챔버, 상기 챔버 내부에 설치되어 웨이퍼가 안착되는 서셉터, 상기 서셉터 상부에 위치하며 상기 챔버를 밀봉하는 챔버리드, 상기 챔버리드에 설치되어 상기 챔버 내부로 공정가스를 공급하는 샤워헤드, 및 상기 샤워헤드를 감싸도록 설치되며, 원주 방향으로 형성된 복수개의 제 1가스커튼홀 및 상기 제 1가스커튼홀의 내측에 원주 방향으로 형성된 복수개의 제 2가스커튼홀을 구비한 가스 커튼을 포함한다.Thin film deposition apparatus according to an embodiment of the present invention for realizing the above object is a chamber, a susceptor is installed in the chamber and the wafer is seated, the chamber lead is located on the susceptor and seal the chamber, A shower head installed in the chamber lead to supply process gas to the chamber, and installed to surround the shower head, the plurality of first gas curtain holes formed in a circumferential direction and a circumferential direction inside the first gas curtain hole; It includes a gas curtain having a plurality of second gas curtain holes formed.

여기에서, 상기 제 2가스커튼홀은 입구보다 출구의 단면적이 더 작은 것을 특징으로 한다.Here, the second gas curtain hole is characterized in that the cross-sectional area of the outlet is smaller than the inlet.

또한, 상기 제 2가스커튼홀은 상기 샤워헤드 측으로 최대한 근접하여 형성될 수 있다.In addition, the second gas curtain hole may be formed as close as possible to the shower head side.

이하에서는 첨부한 도면들을 참조하여 본 발명의 바람직한 실시예를 상세히 설명하기로 한다. 그러나, 본 발명은 여기서 설명되어지는 실시예에 한정되지 않고 다른 형태로 구체화될 수도 있다. 오히려, 여기서 소개되는 실시예는 개시된 내용이 철저하고 완전해질 수 있도록 그리고 당업자에게 본 발명의 사상이 충분히 전달될 수 있도록 하기 위해 제공되어지는 것이다. 한편, 첨부된 도면에서의 요소의 형상 등은 보다 명확한 설명을 위해 다소 과장되어진 것으로 이해되는 것이 바람직하며, 명세서 전체에 걸쳐서 동일한 참조번호들은 동일한 구성요소들을 나타낸다.Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention. However, the present invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments introduced herein are provided to ensure that the disclosed subject matter is thorough and complete, and that the spirit of the present invention to those skilled in the art will fully convey. On the other hand, the shape and the like of the elements in the accompanying drawings are preferably understood to be somewhat exaggerated for more clear description, the same reference numerals throughout the specification represent the same components.

도 1은 본 발명의 일실시예에 따른 가스커튼을 구비한 박막증착장치를 나타낸 단면도이고, 도 2는 도 1의 가스커튼을 나타낸 사시도이며, 도 3은 도 2의 Ⅰ-Ⅰ′ 선을 따라 취해진 단면도이다.1 is a cross-sectional view showing a thin film deposition apparatus having a gas curtain according to an embodiment of the present invention, Figure 2 is a perspective view showing the gas curtain of Figure 1, Figure 3 is along the line II 'of FIG. It is a cross section taken.

도 1을 참조하면, 본 발명에 따른 가스커튼을 구비한 박막증착장치(100)는 박막 증착이 이루어지는 공간을 제공하는 챔버(110), 상기 챔버(110) 내부에 위치하며 웨이퍼(W)가 안치되는 서셉터(130), 상기 서셉터(130) 상부에 위치하며 상기 챔버(110)를 밀봉하는 챔버리드(120), 상기 챔버리드(120)에 배치되어 상기 챔버(110) 내부로 공정가스를 공급하는 샤워헤드(140), 및 상기 샤워헤드(140)의 둘레를 감싸도록 설치되는 가스커튼(150)을 구비한다.Referring to FIG. 1, the thin film deposition apparatus 100 having a gas curtain according to the present invention includes a chamber 110 that provides a space in which thin film deposition is performed, and is located inside the chamber 110 and a wafer W is placed therein. The susceptor 130, which is located above the susceptor 130, is disposed in the chamber lead 120, which seals the chamber 110, and disposed in the chamber lead 120 to process process gas into the chamber 110. Shower head 140 for supplying, and the gas curtain 150 is installed to surround the circumference of the shower head 140.

상기 가스커튼을 구비한 박막증착장치(100)는 원자층 증착을 위한 공정에 사용될 수 있다. 즉, TMA(tri methyl aluminium) 및 오존을 교호적으로 피딩(feeding) 및 퍼지(purge)하여 웨이퍼(W)에 알루미늄 산화막을 정밀하게 증착할 수 있다.The thin film deposition apparatus 100 having the gas curtain may be used in a process for atomic layer deposition. That is, the aluminum oxide film may be precisely deposited on the wafer W by alternately feeding and purging tri methyl aluminum (TMA) and ozone.

상기 가스커튼(150)은 상기 챔버리드(120)의 하면에 고정설치된다. 가스커 튼(150)을 관통하는 체결홀(155)을 통해서 결합 스크류(158)가 챔버리드(120)와 가스커튼(150)을 고정시키게 된다.The gas curtain 150 is fixedly installed on the lower surface of the chamber lead 120. The coupling screw 158 fixes the chamber lead 120 and the gas curtain 150 through the fastening hole 155 passing through the gas curtain 150.

상기 챔버(110)는 그 내부에 공급되는 공정가스를 일정한 압력으로 유지하고, 상기 공정가스를 일시적으로 배출시키는 진공배기유닛(116)을 구비한다. 상기 진공배기유닛(116)은 상기 챔버(110) 내부를 전체적으로 균일하게 진공처리할 수 있도록 배플(baffle;114)에 연결될 수 있다. 상기 배플(114)은 진공배기유닛(116)이 가까운 곳은 펌핑되는 구멍이 작고, 진공배기유닛(116)이 멀어질수록 펌핑되는 구멍이 커지는 구조를 갖는 것이 바람직하다.The chamber 110 maintains a process gas supplied therein at a constant pressure, and includes a vacuum exhaust unit 116 for temporarily discharging the process gas. The vacuum exhaust unit 116 may be connected to a baffle 114 to uniformly vacuum the inside of the chamber 110. The baffle 114 preferably has a structure in which a pumping hole is small near the vacuum exhaust unit 116 and a pumping hole is larger as the vacuum exhaust unit 116 is farther away.

상기 챔버리드(120)는 그 내부에 가스 공급관(156)이 관통하여 설치되며, 상기 가스 공급관(156)은 제1유로(156a) 및 제2유로(156b)로 구성될 수 있다. 상기 가스 공급관(156)은 챔버(110)에 고정된 챔버절연부(112)를 통해서 설치된다. 아르곤가스는 상기 가스 공급관(156) 및 유로들(156a,156b)을 거친후에 상기 가스커튼(150)을 통해 챔버(110) 내부로 공급된다.The chamber lead 120 may be installed through a gas supply pipe 156 therein, and the gas supply pipe 156 may include a first flow path 156a and a second flow path 156b. The gas supply pipe 156 is installed through the chamber insulator 112 fixed to the chamber 110. Argon gas is supplied into the chamber 110 through the gas curtain 150 after passing through the gas supply pipe 156 and the flow paths 156a and 156b.

상기 서셉터(130)는 그 내부에 열 공급관(132) 및 히터(미도시)가 내장될 수 있다. 상기 열 공급관(132)을 통해 열이 상기 히터로 공급됨으로써 상기 서셉터(130)에 안치되는 웨이퍼(W)를 일정온도로 가열시킬 수 있도록 한다.The susceptor 130 may have a heat supply pipe 132 and a heater (not shown) therein. Heat is supplied to the heater through the heat supply pipe 132 to heat the wafer W placed in the susceptor 130 to a predetermined temperature.

상기 샤워헤드(140)는 그 내부를 관통하는 제 1가스공급홀(142) 및 제 2가스공급홀(144)을 구비한다. 상기 제 1가스공급홀(142)은 퍼지가스를 공급하고 제 2가스공급홀(144)은 공정가스를 공급하게 되는데, 상기 퍼지가스는 오존가스일 수 있고, 상기 공정가스는 TMA일 수 있다. 상기 가스공급홀(142,144)들은 각각 가스배 출구들(148,146)을 통해서 챔버(110) 내부로 가스를 공급한다.The shower head 140 has a first gas supply hole 142 and a second gas supply hole 144 penetrating therein. The first gas supply hole 142 supplies a purge gas and the second gas supply hole 144 supplies a process gas. The purge gas may be an ozone gas, and the process gas may be a TMA. The gas supply holes 142 and 144 supply gas into the chamber 110 through gas discharge outlets 148 and 146, respectively.

상기 가스커튼(150)은 챔버(110) 내에서 증착 공정이 진행되는 도중에 웨이퍼(W) 상에 박막이 원활하게 형성되도록 하고, 챔버(110) 내부의 벽면에 부착되어 있는 파티클 등이 상기 웨이퍼(W)로 유입되는 것을 차단하는 기능을 한다. 즉, 아르곤(Ar)과 같은 불활성 가스를 챔버(110) 내의 웨이퍼(W) 가장자리 외측으로 분사함으로써 상기의 목적을 수행하게 된다.The gas curtain 150 allows the thin film to be smoothly formed on the wafer W during the deposition process in the chamber 110, and particles or the like attached to a wall inside the chamber 110 may be formed in the wafer 110. W) It blocks the inflow into the plant. That is, the above purpose is accomplished by injecting an inert gas such as argon (Ar) to the outside of the edge of the wafer (W) in the chamber (110).

상기 가스커튼의 일실시예(150)로서 도 2 및 도 3을 참조하면, 그 내부를 관통하는 복수개의 제 1가스커튼홀(152) 및 상기 제 1가스커튼홀(152)의 내측에 배치되는 복수개의 제 2가스커튼홀(154)이 형성될 수 있다. 상기 가스커튼홀들(152,154)은 원주 방향으로 일정한 간격을 유지한 채 차례로 복수개가 배열될 수 있다. 상기 가스커튼홀들(152,154)은 앞에서 설명한 유로들(156a,156b)에 연통하여 아르곤가스의 이송을 담당한다.Referring to FIGS. 2 and 3 as one embodiment of the gas curtain, a plurality of first gas curtain holes 152 and inner portions of the first gas curtain holes 152 penetrate the inside of the gas curtains. A plurality of second gas curtain holes 154 may be formed. The gas curtain holes 152 and 154 may be arranged in plural in order while maintaining a constant distance in the circumferential direction. The gas curtain holes 152 and 154 communicate with the flow paths 156a and 156b described above and are responsible for the transfer of argon gas.

한편, 상기 제 2가스커튼홀(154)을 가스커튼(150)과 샤워헤드(140)의 접촉면에 최대한 근접하게 형성시킴으로써 상기 샤워헤드(140)로부터 분사되는 가스의 유출을 줄일 수 있다.On the other hand, by forming the second gas curtain hole 154 as close as possible to the contact surface between the gas curtain 150 and the shower head 140, it is possible to reduce the outflow of the gas injected from the shower head 140.

도 4는 가스커튼의 다른 실시예(150′)를 나타낸 단면도이다. 다른 실시예(150′)의 경우는 일실시예(150)와 형상 및 구조가 유사하므로 도 4를 참조하여, 다른 특징에 대해 설명하면 다음과 같다. 상기 가스커튼(150′)은 아르곤가스의 입구부의 직경(D)이 출구부의 직경(D′)보다 더 큰 제 2가스커튼홀(154′)를 구비한다. 즉, 출구부로 갈수록 단면적이 줄어들게 되므로 베르누이 정리에 의해 유속이 점점 빨라지게 된다. 따라서, 빠른 유속으로 웨이퍼(W)의 외측 영역으로 아르곤가스를 토출함으로써 공정가스가 웨이퍼(W)에 증착됨이 없이 바로 배기되는 현상을 줄일 수 있다.4 is a cross-sectional view showing another embodiment 150 'of a gas curtain. In the case of another embodiment 150 ', the shape and structure are similar to those of the embodiment 150. Referring to FIG. 4, other features will be described below. The gas curtain 150 ′ includes a second gas curtain hole 154 ′ whose diameter D of the inlet portion of argon gas is larger than the diameter D ′ of the outlet portion. In other words, the cross-sectional area is reduced toward the outlet portion, so that the flow velocity is gradually increased by Bernoulli's theorem. Therefore, by discharging argon gas to the outer region of the wafer W at a high flow rate, the phenomenon in which the process gas is directly exhausted without being deposited on the wafer W can be reduced.

이하, 다시 도 1을 참조하여, 가스커튼을 구비한 박막증착장치(100)의 작동을 설명한다. 먼저, 서셉터(130)에 웨이퍼(W)을 로딩한 후 히터를 통해서 일정한 온도로 상기 웨이퍼(W)를 가열시킨후, 챔버(110) 내부를 진공배기유닛(116)에 의해 진공펌핑하여 일정 진공도를 유지시킨다.Hereinafter, referring to FIG. 1 again, the operation of the thin film deposition apparatus 100 having a gas curtain will be described. First, after loading the wafer (W) to the susceptor 130 and then heating the wafer (W) at a constant temperature through a heater, the chamber 110 is vacuum pumped by the vacuum exhaust unit 116 to a constant Maintain the degree of vacuum.

이후, 상기 샤워헤드(140)의 제1가스공급홀(142)과 제2가스공급홀(144)을 통해 챔버(110) 내부에 오존 및 TMA 가스를 순차적으로 주입 및 퍼지하는 과정을 통해서 웨이퍼(W) 상에 알류미늄 산화막을 형성시키게 된다. 상기 알루미늄 산화막을 형성하는 동안 챔버(110) 내부의 측벽에 미반응 공정가스들이 응착되는 것을 방지하고, 웨이퍼(W)에 공정가스가 도핑되는 것을 보조하기 위하여 가스커튼(150)에 형성된 가스커튼홀(152,154)을 통해서 아르곤가스를 주입할 수 있다.Thereafter, the wafer (through the process of sequentially injecting and purging ozone and TMA gas into the chamber 110 through the first gas supply hole 142 and the second gas supply hole 144 of the shower head 140) An aluminum oxide film is formed on W). Gas curtain holes formed in the gas curtain 150 to prevent unreacted process gases from adhering to the sidewalls of the chamber 110 and to assist the process gas doping to the wafer W while forming the aluminum oxide layer. Argon gas may be injected through 152 and 154.

따라서, 상기의 경우에 아르곤가스가 상기 웨이퍼의 가장자리 측으로 분사됨으로써 웨이퍼에 반응하지 않고 배기되는 공정가스의 양을 줄일 수 있다.Therefore, in the above case, the amount of process gas exhausted without reacting to the wafer can be reduced by argon gas being injected to the edge side of the wafer.

본 발명에 따른 가스커튼을 구비한 박막증착장치는 박막증착공정 진행 중에 가스커튼 상에 원주 방향을 따라 이중으로 형성된 가스커튼홀을 통해서 불활성 가스를 챔버 내부로 공급함으로써 웨이퍼 상에 증착되지 않고 배기되는 공정가스의 양을 줄여 증착률을 높임으로써 품질을 높일 수 있고 공정상의 효율을 극대화할 수있다.The thin film deposition apparatus having a gas curtain according to the present invention is exhausted without being deposited on a wafer by supplying an inert gas into the chamber through a gas curtain hole formed in a circumferential direction on the gas curtain in the thin film deposition process. By increasing the deposition rate by reducing the amount of process gas, it is possible to improve the quality and maximize the efficiency of the process.

Claims (3)

챔버;chamber; 상기 챔버 내부에 설치되어 웨이퍼가 안착되는 서셉터;A susceptor installed inside the chamber to seat a wafer; 상기 서셉터 상부에 위치하며 상기 챔버를 밀봉하는 챔버리드;A chamber lead positioned above the susceptor and sealing the chamber; 상기 챔버리드에 설치되어 상기 챔버 내부로 공정가스를 공급하는 샤워헤드; 및A shower head installed in the chamber lead to supply a process gas into the chamber; And 상기 샤워헤드를 감싸는 형태로 설치되며, 원주 방향으로 형성된 복수개의 제 1가스커튼홀 및 상기 제 1가스커튼홀 내측에 원주 방향으로 형성된 복수개의 제 2가스커튼홀을 구비하는 가스커튼을 포함하는 박막증착장치.A thin film is installed to surround the shower head and includes a gas curtain including a plurality of first gas curtain holes formed in a circumferential direction and a plurality of second gas curtain holes formed in a circumferential direction inside the first gas curtain hole. Vapor deposition apparatus. 제 1항에 있어서, 상기 제 2가스커튼홀은 입구보다 출구의 단면적이 더 작은 것을 특징으로 하는 박막증착장치.The thin film deposition apparatus according to claim 1, wherein the second gas curtain hole has a smaller cross-sectional area of the outlet than the inlet. 제 1항 또는 제 2항에 있어서, 상기 제 2가스커튼홀은 상기 샤워헤드 측에 근접하여 형성되는 것을 특징으로 하는 박막증착장치.The thin film deposition apparatus according to claim 1 or 2, wherein the second gas curtain hole is formed close to the shower head side.
KR1020060029340A 2006-03-31 2006-03-31 Thinfilm deposition apparatus having gas curtain KR20070098104A (en)

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