JP3179864B2 - Thin film forming equipment - Google Patents
Thin film forming equipmentInfo
- Publication number
- JP3179864B2 JP3179864B2 JP13865692A JP13865692A JP3179864B2 JP 3179864 B2 JP3179864 B2 JP 3179864B2 JP 13865692 A JP13865692 A JP 13865692A JP 13865692 A JP13865692 A JP 13865692A JP 3179864 B2 JP3179864 B2 JP 3179864B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- wafer
- thin film
- gas
- film forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【０００１】[0001]
【産業上の利用分野】この発明は、例えば高密度集積回
路の配線、電極、バリアメタル、キャパシタ、層間絶縁
膜等の形成に使用される原料ガスを、熱化学反応により
分解堆積させて薄膜をウエハ上に形成する薄膜形成装置
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a thin film by decomposing and depositing a raw material gas used for forming wirings, electrodes, barrier metals, capacitors, interlayer insulating films and the like of a high-density integrated circuit by a thermochemical reaction. The present invention relates to an apparatus for forming a thin film on a wafer.
【０００２】[0002]
【従来の技術】以下、この種の従来の薄膜形成装置を図
について説明する。図１２は例えば特公平２−４１１６
６号公報に示された従来の雰囲気加熱方式の薄膜形成装
置を示す図である。図において、１は反応槽、２はこの
反応槽１を密閉するためのフロントキャップ、３は反応
槽１内に原料ガスとパージ用不活性ガスを導入するため
の導入口、４は反応槽１の終端に設けられた排気口、５
はこの排気口４と真空ポンプ６とを接続する配管、７は
この配管５に介装されるバルブ、８は反応槽１を囲繞す
るように配設されたヒータ、９は反応槽１内に設置され
る石英ボートで、複数のウエハ１０が載置されている。2. Description of the Related Art A conventional thin film forming apparatus of this type will be described with reference to the drawings. FIG. 12 shows, for example,
FIG. 6 is a view showing a conventional atmosphere heating type thin film forming apparatus disclosed in Japanese Unexamined Patent Publication No. 6-No. In the figure, 1 is a reaction tank, 2 is a front cap for sealing the reaction tank 1, 3 is an inlet for introducing a raw material gas and an inert gas for purging into the reaction tank 1, and 4 is a reaction tank 1. Exhaust port at the end of
Is a pipe connecting the exhaust port 4 and the vacuum pump 6, 7 is a valve interposed in the pipe 5, 8 is a heater arranged to surround the reaction tank 1, and 9 is a A plurality of wafers 10 are mounted on a quartz boat to be installed.
【０００３】従来の雰囲気加熱方式の薄膜形成装置は上
記のように構成され、例えばウエハ１０を石英ボート９
に装着して反応槽１内に設置し、フロントキャップ２を
閉じて密閉する。反応槽１内部に配置されたウエハ１０
は、ヒータ８により処理温度に加熱される。バルブ７を
開けて排気口４より減圧排気した後、反応槽１内に原料
ガスを導入口３より導入する。原料ガスは導入口３より
排気口４方向に拡散し、熱化学反応によりウエハ１０上
で分解しウエハ１０上に所望の薄膜が形成される。この
後、原料ガスの導入を停止して減圧排気した後にバルブ
７を閉じ、不活性ガスを導入口３より導入することによ
り、反応槽１内は大気圧に復帰し、フロントキャップ２
を開けて石英ボート９をウエハ１０ともども取り出す。
次にフロントキャップ２を閉じて新たなウエハ１０が搬
送されるまで待機する。A conventional atmosphere heating type thin film forming apparatus is constructed as described above.
And installed in the reaction tank 1, and close and seal the front cap 2. Wafer 10 placed inside reaction tank 1
Is heated to the processing temperature by the heater 8. After opening the valve 7 and evacuating the exhaust gas from the exhaust port 4, the raw material gas is introduced into the reaction tank 1 from the inlet port 3. The source gas diffuses from the inlet 3 toward the exhaust port 4 and is decomposed on the wafer 10 by a thermochemical reaction to form a desired thin film on the wafer 10. Thereafter, the introduction of the raw material gas is stopped, the pressure is reduced, the valve 7 is closed, and the inert gas is introduced through the inlet 3 to return the inside of the reaction vessel 1 to the atmospheric pressure.
Is opened, and the quartz boat 9 is taken out together with the wafer 10.
Next, the front cap 2 is closed and the apparatus waits until a new wafer 10 is transferred.
【０００４】図１３は例えば特開昭６３−５３２７号公
報に示された従来の反応槽内部からの局所加熱方式によ
る薄膜形成装置を示す断面図である。図において、１１
は反応槽、１２はこの反応槽１１の一端側に形成され原
料ガスを導入するための導入口、１３は反応槽１１の他
端側に形成される排気口、１４は回転軸１５の駆動によ
り回転するウエハ支持台、１６はこのウエハ支持台１４
に内蔵されるヒータ、１７はウエハ支持台１４上に載置
される複数のウエハ、１８はこれら各ウエハ１７の上方
に配設され、不活性ガスをこれら各ウエハ１７上に吹き
つけるガス噴出手段である。FIG. 13 is a sectional view showing a conventional apparatus for forming a thin film by a local heating method from the inside of a reaction tank disclosed in Japanese Patent Application Laid-Open No. 63-5327. In the figure, 11
Is a reaction tank, 12 is an introduction port formed at one end of the reaction tank 11 for introducing a raw material gas, 13 is an exhaust port formed at the other end of the reaction tank 11, and 14 is driven by the rotation shaft 15. The rotating wafer support 16 is the wafer support 14.
, A plurality of wafers 17 mounted on the wafer support 14, and a gas ejecting means 18 disposed above each of the wafers 17 for blowing an inert gas onto each of the wafers 17. It is.
【０００５】従来の反応槽内部からの局所加熱方式によ
る薄膜形成装置は上記のように構成されており、例えば
排気口１３から真空排気される反応槽１１内は、回転軸
１５を介して回転するウエハ支持台１４に内蔵されたヒ
ータ１６により所定温度に加熱される。ついで、上記ウ
エハ１７にほぼ平行に導入口１２から原料ガスを導入
し、ウエハ１７上に薄膜を成長させる。成膜中、ガス噴
出手段１８から不活性ガスを内部空間に噴出させ、ウエ
ハ１７の表面に対向するようにガス流を形成させる。こ
の不活性ガス流により原料ガスのガス流を層流状態に保
持しかつウエハ１７近傍空間にのみ限定させている。こ
の後、原料ガスの導入を停止して減圧排気した後反応層
１１内を大気圧に復帰し、ウエハ１７を取り出す。A conventional thin film forming apparatus using a local heating method from the inside of a reaction tank is configured as described above. For example, the inside of a reaction tank 11 evacuated from an exhaust port 13 rotates via a rotary shaft 15. The wafer is heated to a predetermined temperature by a heater 16 built in the wafer support 14. Then, a source gas is introduced from the inlet 12 substantially parallel to the wafer 17, and a thin film is grown on the wafer 17. During the film formation, an inert gas is jetted from the gas jetting means 18 into the internal space to form a gas flow so as to face the surface of the wafer 17. The inert gas flow keeps the gas flow of the raw material gas in a laminar flow state and limits only the space near the wafer 17. After that, the introduction of the raw material gas is stopped, the pressure in the reaction layer 11 is reduced, and the inside of the reaction layer 11 is returned to the atmospheric pressure, and the wafer 17 is taken out.
【０００６】図１４は例えば特開昭６３−２８８６８号
公報に示された従来の反応槽外部からの局所加熱方式に
よる薄膜形成装置を示す断面図である。図において、１
９は反応槽、２０はこの反応槽１９の一端側に形成され
原料ガスを導入するための導入口、２１は反応槽１９の
他端側に形成される排気口、２２は回転軸２３の駆動に
より回転するウエハ支持台、２４はこのウエハ支持台２
２上に載置されるウエハ、２５はウエハ２４の上方に配
設され、不活性ガスをウエハ２４上に吹きつけるガス噴
出手段、２６は光透過窓２７を介して光をウエハ２４上
に照射して加熱する加熱ランプである。FIG. 14 is a sectional view showing a conventional thin film forming apparatus using a local heating method from the outside of a reaction tank disclosed in Japanese Patent Application Laid-Open No. 63-28868. In the figure, 1
Reference numeral 9 denotes a reaction tank, reference numeral 20 denotes an inlet formed at one end of the reaction tank 19 for introducing a raw material gas, reference numeral 21 denotes an exhaust port formed at the other end of the reaction tank 19, and reference numeral 22 denotes a drive of a rotating shaft 23. The wafer support 24 is rotated by the wafer support 24.
A wafer 25 mounted on the wafer 2, 25 is disposed above the wafer 24, and gas blowing means for blowing an inert gas onto the wafer 24, and 26 irradiates light onto the wafer 24 through a light transmission window 27. And a heating lamp for heating.
【０００７】従来の反応槽外部からの局所加熱方式によ
る薄膜形成装置は上記のように構成されており、例えば
ウエハ２４を排気口２１から真空排気される反応槽１９
内の、回転軸２３を介して回転する支持台２４上に設置
する。ついで、ウエハ２４にほぼ平行に導入口２０から
原料ガスとその他の反応ガスあるいは不活性ガスを分離
して導入し、加熱ランプ２６からの光を透過窓２７とガ
ス噴出手段２５とを通過させ、回転中のウエハ２４に照
射することにより所定温度に加熱しウエハ２４上に薄膜
を成長させる。成膜中、ガス噴出手段２５から不活性ガ
スを内部空間に噴出させ、ウエハ２４の表面に対向する
ようにガス流を形成させる。この不活性ガス流により原
料ガスのガス流を層流状態に保持し、かつウエハ２４近
傍空間にのみ限定させている。この後、原料ガスの導入
を停止して減圧排気した後反応槽１９内を大気圧に復帰
し、ウエハ２４を取り出す。The conventional apparatus for forming a thin film by a local heating method from the outside of the reaction tank is constructed as described above. For example, the reaction tank 19 in which the wafer 24 is evacuated from the exhaust port 21 is evacuated.
Is installed on a support 24 that rotates through a rotating shaft 23. Next, the source gas and other reactive gas or inert gas are separated and introduced from the inlet 20 almost in parallel with the wafer 24, and the light from the heating lamp 26 is passed through the transmission window 27 and the gas ejection means 25, By irradiating the rotating wafer 24, it is heated to a predetermined temperature to grow a thin film on the wafer 24. During the film formation, an inert gas is jetted from the gas jetting means 25 into the internal space to form a gas flow so as to face the surface of the wafer 24. The inert gas flow keeps the gas flow of the raw material gas in a laminar flow state and limits only the space near the wafer 24. Thereafter, the introduction of the raw material gas is stopped and the pressure in the reactor 19 is reduced, and then the pressure in the reaction tank 19 is returned to the atmospheric pressure, and the wafer 24 is taken out.
【０００８】[0008]
【発明が解決しようとする課題】従来の薄膜形成装置は
以上のようにそれぞれ構成されており、図１２に示す雰
囲気加熱方式の薄膜形成装置においては、原料ガスがウ
エハ１０上のみならず反応槽１の内壁表面上においても
分解する。特に、ヒータ８の近くに位置する反応槽１は
ウエハ１０および石英ボート９より高温になるため、分
解生成物の堆積速度がより速くなり多量の付着物が反応
槽１表面に発生する。反応槽１表面の付着物は膜厚が増
大すると、反応ガスの導入あるいは排気、不活性ガスの
導入あるいは排気にともなって剥離が発生する。そし
て、これがウエハ１０上に付着すると作製したデバイス
特性が劣化、ひいては不良品が発生し、製造歩留まりを
低下させる原因となる。このため、石英ボート９および
反応槽１に形成された剥離性分解生成物は定期的に除去
する必要があり、洗浄メンテナンスを実施しなければな
らない。とくに、有機金属ガス等の利用により反応槽１
の内壁部に管材質とは異種の付着物が発生する場合は、
比較的膜厚が薄くとも剥離が発生するため、メンテナン
スの実施頻度が非常に高くなる。また、反応槽１の内壁
部に管材質とは異種の付着物が発生すると、ヒータ８に
よるウエハ１０の処理温度の制御が困難となり、ウエハ
面内、バッジ内およびバッジ間の膜厚や膜質の均一性が
劣化するため、多数のウエハを一度に処理できない等の
問題点があった。The conventional thin film forming apparatus is constructed as described above. In the thin film forming apparatus of the atmosphere heating type shown in FIG. 1 also decomposes on the inner wall surface. In particular, since the temperature of the reaction tank 1 located near the heater 8 is higher than the temperature of the wafer 10 and the quartz boat 9, the deposition rate of decomposition products is increased, and a large amount of deposits are generated on the surface of the reaction tank 1. When the film thickness of the deposit on the surface of the reaction tank 1 increases, separation occurs with the introduction or exhaust of the reaction gas or the introduction or exhaust of the inert gas. If this adheres to the wafer 10, the characteristics of the manufactured device are deteriorated, and a defective product is generated, which causes a reduction in manufacturing yield. For this reason, it is necessary to periodically remove the strippable decomposition products formed in the quartz boat 9 and the reaction tank 1, and cleaning maintenance must be performed. In particular, the reaction tank 1
If deposits different from the tube material occur on the inner wall of the
Since peeling occurs even if the film thickness is relatively thin, the frequency of maintenance becomes extremely high. Further, if foreign matter different from the tube material is generated on the inner wall of the reaction tank 1, it becomes difficult to control the processing temperature of the wafer 10 by the heater 8, and the film thickness and film quality in the wafer surface, in the badge, and between the badges are reduced. There is a problem that a large number of wafers cannot be processed at one time because the uniformity is deteriorated.
【０００９】又、図１３に示す反応槽内部からの局所加
熱方式による薄膜形成装置においては、反応槽１１を加
熱する必要が無いため、薄膜形成時に原料ガスはヒータ
１６近傍の空間以外では分解せず、反応槽１１への付着
物量は減少する。しかし、局所加熱方式の薄膜形成装置
では、反応槽１１内の一部のみを高温に加熱するという
方式のため、雰囲気加熱方式の薄膜形成装置と比較し
て、均一加熱が困難で、しかも、面内の均一加熱を実現
するには、ウエハ１７に対してヒータ１６を内蔵するウ
エハ支持台１４を大きくして均一温度制御ができる面積
をかせぐ等の方策が必要で温度制御がより複雑になる。
この場合、ウエハ１７により覆われないウエハ支持台１
４の露出部には多量の付着物が発生する。この付着物は
膜厚が増大すると、原料ガスの導入あるいは排気、不活
性ガスの導入あるいは排気にともない剥離が発生する。
そして、これがウエハ１７上に付着すると作製したデバ
イスの特性を劣化させるとともに不良品を発生させ、製
造歩留まりを低下させる等の問題点があった。なお、図
１４に示す薄膜形成装置においても、加熱源としての加
熱ランプ２６が反応槽１９の外部に設けられている点が
異なるだけで、局所加熱方式という点においては何ら異
なっていないのでやはり同様の問題点があった。In the thin film forming apparatus using the local heating method from the inside of the reaction tank shown in FIG. 13, since it is not necessary to heat the reaction tank 11, the source gas is decomposed in a space other than the space near the heater 16 when forming the thin film. Instead, the amount of deposits on the reaction tank 11 decreases. However, in the local heating type thin film forming apparatus, since only a part of the inside of the reaction tank 11 is heated to a high temperature, uniform heating is difficult as compared with the atmosphere heating type thin film forming apparatus. In order to realize uniform heating of the inside of the wafer, it is necessary to take measures such as increasing the size of the wafer support table 14 having the heater 16 built in with respect to the wafer 17 to increase the area where uniform temperature control can be performed, and the temperature control becomes more complicated.
In this case, the wafer support 1 not covered by the wafer 17
A large amount of deposits are generated on the exposed portion of No. 4. When the thickness of the deposit increases, separation occurs with the introduction or exhaust of the source gas or the introduction or exhaust of the inert gas.
When this adheres to the wafer 17, there are problems such as deteriorating the characteristics of the manufactured device, generating a defective product, and lowering the production yield. In the thin film forming apparatus shown in FIG. 14, the only difference is that a heating lamp 26 as a heating source is provided outside the reaction tank 19, and there is no difference in the local heating method. There was a problem.
【００１０】さらに、上記各図１２、１３、１４に示す
従来装置においては、供給される原料ガスのうち各ウエ
ハ１０、１７、２４上での堆積に利用される割合は数％
と非常に低く、大部分は未反応のまま、あるいは分解温
度または気化温度の低い反応副生成物として各排気口
４、１３、２１より排気される。このため、各反応槽
１、１１、１９の各ウエハ１０、１７、２４設置部より
各排気口４、１３、２１側の低温部において多量の付着
物が発生するとともに、室温において液体あるいは固体
の原料を用いた場合、原料の気化温度以下となる各反応
槽１、１１、１９、の低温部の付着物中には、未反応の
原料および原料の反応副生成物が液化あるいは吸着して
含有される。この結果この付着物は高温部に形成される
付着物と比べると再分解しやすい物質であるとともに付
着物中から気化ガスが発生しやすく、この再分解や気化
ガスの発生にともない多量の微細な粒子が各反応槽１、
１１、１９内に飛散する。また、反応副生成物が付着す
ることにより低温部で形成された付着物は、緻密性に乏
しい物質になるため、膜厚が増大すると原料ガスの導入
域は排気、不活性ガスの導入域は排気にともなう剥離が
発生しやすく、これらが各ウエハ１０、１７、２４上に
付着すると作製したデバイス特性が劣化して不良品が発
生し、製造歩留まり向上の阻害原因となる。さらに、各
反応槽１、１１、１９の低温部に形成された付着物は、
定期的に洗浄メンテナンスを実施し除去しなければなら
ない等という問題点も生じる。Furthermore, in the conventional apparatus shown in FIGS. 12, 13 and 14, the percentage of the supplied source gas used for deposition on each of the wafers 10, 17 and 24 is several percent.
And is exhausted from each of the exhaust ports 4, 13, 21 as a reaction by-product having a low decomposition temperature or a low vaporization temperature while being largely unreacted. For this reason, a large amount of deposits are generated in the low-temperature portion on the exhaust port 4, 13, 21 side from the installation portion of each of the wafers 10, 17, 24 in each of the reaction tanks 1, 11, 19, and a liquid or solid is formed at room temperature. When the raw material is used, unreacted raw material and reaction by-products of the raw material are liquefied or adsorbed and contained in the deposits in the low temperature portion of each of the reaction tanks 1, 11, and 19 in which the raw material has a vaporization temperature or lower. Is done. As a result, the deposit is a substance that is easily decomposed in comparison with the deposit formed in the high-temperature portion and a vaporized gas is easily generated from the deposit, and a large amount of fine particles are generated due to the re-decomposition and generation of the vaporized gas. Particles in each reaction tank 1,
It scatters in 11 and 19. In addition, since the deposits formed in the low temperature part due to the deposition of the reaction by-products become substances having poor density, when the film thickness increases, the introduction region of the raw material gas is exhausted, and the introduction region of the inert gas is reduced. Separation due to exhaust is likely to occur, and if these adhere to each of the wafers 10, 17, and 24, the manufactured device characteristics will be degraded and defective products will be generated, which will hinder an improvement in manufacturing yield. Further, the deposits formed in the low temperature parts of the respective reaction vessels 1, 11, and 19 are as follows:
There is also a problem that cleaning maintenance must be periodically performed and removed.
【００１１】この発明は上記のような問題点を解消する
ためになされたもので、反応槽の内壁面やウエハ支持台
の表面に付着物が発生するのを阻止して不良品の発生を
防止するとともに、反応層の低温部に発生する付着物を
熱的安定性の良いものとすることにより、製造歩留まり
の大幅な向上を達成することが可能であるとともにメン
テナンスの容易な薄膜形成装置を得ることを目的とする
ものである。SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems, and prevents the occurrence of deposits on the inner wall surface of a reaction tank or the surface of a wafer support, thereby preventing the occurrence of defective products. In addition, by making the deposits generated in the low temperature portion of the reaction layer have good thermal stability, it is possible to achieve a significant improvement in the production yield and obtain a thin film forming apparatus which is easy to maintain. The purpose is to do so.
【００１２】[0012]
【課題を解決するための手段】この発明に係る請求項１
における薄膜形成装置は、反応槽の温度を、原料ガス流
の上流側よりも下流側において高く、かつ原料ガスの分
解反応温度未満に制御する第１の温度制御手段と、ウエ
ハおよびウエハ近傍の雰囲気温度を原料ガスの分解反応
温度以上に制御する第２の温度制御手段とを備えたもの
であり、又、請求項２における薄膜形成装置は、請求項
１において第２の温度制御手段をウエハを収容するボー
ト上に配設されたウエハ状ヒータで構成したものであ
り、さらに、請求項３における薄膜形成装置は、請求項
１においてウエハ支持台上のウエハを第２の温度制御手
段としての加熱ランプによって加熱するとともに、第３
の温度制御手段によって支持台の温度を原料ガスの分解
反応温度未満に制御するようにしたものである。Means for Solving the Problems Claim 1 according to the present invention.
The thin film forming apparatus in the temperature of the reaction vessel, feed gas stream
Temperature control means for controlling the temperature higher than the upstream side and lower than the decomposition reaction temperature of the source gas , and the second temperature control means for controlling the wafer and the ambient temperature in the vicinity of the wafer to a temperature equal to or higher than the decomposition reaction temperature of the source gas. In the thin film forming apparatus according to the present invention, the second temperature control means is constituted by a wafer-like heater disposed on a boat for accommodating a wafer. In the thin film forming apparatus according to the third aspect, the wafer on the wafer support is heated by a heating lamp as second temperature control means in the first aspect, and
The temperature of the support table is controlled to be lower than the decomposition reaction temperature of the raw material gas by the temperature control means.
【００１３】さらに、請求項４における薄膜形成装置
は、反応槽内のウエハより排気口側に配設される付着物
形成部材と、この付着物形成部材の温度Ｔ1を、式Ｔb≦
Ｔ1≦Ｔg（但し、Ｔb：原料ガスの気化温度、Ｔg：原料
ガスの分解反応温度）を満足するように制御する第４の
温度制御手段とを備えたものであり、又、請求項５にお
ける薄膜形成装置は、請求項４において第４の温度制御
手段は、反応槽外から排気口に向けて供給される原料ガ
ス以外の第２のガスで付着物形成部材を加熱するように
したものである。Further, in the thin film forming apparatus according to a fourth aspect of the present invention, the deposit forming member disposed on the exhaust port side of the wafer in the reaction tank, and the temperature T 1 of the deposit forming member can be calculated by the following equation: T b ≦
And a fourth temperature control means for controlling so as to satisfy T 1 ≦ T g (where T b is a vaporization temperature of the raw material gas and T g is a decomposition reaction temperature of the raw material gas). According to a fifth aspect of the present invention, in the thin film forming apparatus according to the fourth aspect, the fourth temperature control means heats the deposit forming member with a second gas other than the raw material gas supplied from the outside of the reaction vessel toward the exhaust port. It was made.
【００１４】[0014]
【作用】この発明における薄膜形成装置の第１の温度制
御手段は反応槽の温度を、又、第３の温度制御手段はウ
エハ支持台の温度を原料ガスの分解反応温度未満にそれ
ぞれ制御することにより、反応槽の内壁面やウエハ支持
台の表面への分解生成物の堆積速度を抑制して付着を低
減するとともに、第４の温度制御手段は反応槽内のウエ
ハより排気口側に配設される付着物形成部材の温度Ｔ1
を、式Ｔb≦Ｔ1≦Ｔg（但し、Ｔb：原料ガスの気化温
度、Ｔg：原料ガスの分解反応温度）を満足するように
制御して付着物を熱的安定性の良いものとする。The first temperature control means of the thin film forming apparatus according to the present invention controls the temperature of the reaction tank, and the third temperature control means controls the temperature of the wafer support to a temperature lower than the decomposition reaction temperature of the source gas. In this way, the rate of deposition of decomposition products on the inner wall surface of the reaction tank and the surface of the wafer support is suppressed to reduce adhesion, and the fourth temperature control means is disposed closer to the exhaust port than the wafer in the reaction tank. The temperature T 1 of the deposited material forming member
The equation T b ≦ T 1 ≦ T g ( However, T b: the vaporization temperature of the raw material gas, T g: the decomposition reaction temperature of the raw material gas) good thermal stability control to deposit so as to satisfy the Shall be.
【００１５】[0015]
【実施例】実施例１．以下、この発明の実施例を図に基
づいて説明する。図１はこの発明の実施例１における薄
膜形成装置の構成を示す図である。図において、３１は
一端に開口を有する反応槽、３２はこの反応槽３１の開
口を塞ぐことにより反応槽３１を密閉するフロントキャ
ップ、３３は反応槽３１の開口近傍に配設され原料ガス
およびパージ用不活性ガスを導入するための導入口、３
４は反応槽３１の終端側に設けられた排気口、３５はこ
の排気口３４と真空ポンプ３６とを接続する配管、３７
はこの配管３５の途中に介装されるバルブである。[Embodiment 1] Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a diagram showing a configuration of a thin film forming apparatus according to Embodiment 1 of the present invention. In the figure, 31 is a reaction tank having an opening at one end, 32 is a front cap that closes the reaction tank 31 by closing the opening of the reaction tank 31, and 33 is a source cap and a purge gas disposed near the opening of the reaction tank 31. Inlet for introducing inert gas for
Reference numeral 4 denotes an exhaust port provided at the end side of the reaction tank 31; 35, a pipe connecting the exhaust port 34 to the vacuum pump 36;
Is a valve interposed in the middle of the pipe 35.
【００１６】３８は反応槽３１の底部に載置された石英
ボート、３９はこの石英ボート３８上に搭載された複数
枚のウエハ、４０はこのウエハ３９を加熱するための加
熱ガスを反応槽３１内に導入する加熱ガス導入手段、４
１は反応槽３１を囲繞するように配設され、反応槽３１
の壁面を加熱および冷却する加熱・冷却手段、４２は熱
電対４２ａによって反応槽３１の壁面の温度を検知し、
加熱・冷却手段４１を制御することにより反応槽３１の
壁面の温度を、原料ガスの分解反応温度未満に保持する
第１の温度制御手段、４３は熱電対４３ａによって石英
ボート３８上のウエハ３９の温度を検知し、加熱ガス導
入手段４０を制御することによりウエハ３９の温度を、
原料ガスの分解反応温度以上に保持する第２の温度制御
手段である。Reference numeral 38 denotes a quartz boat mounted on the bottom of the reaction vessel 31; 39, a plurality of wafers mounted on the quartz boat 38; 40, a heating gas for heating the wafer 39; Means for introducing heated gas into
1 is provided so as to surround the reaction tank 31,
The heating / cooling means 42 for heating and cooling the wall surface of the reaction vessel 42 detects the temperature of the wall surface of the reaction vessel 31 by a thermocouple 42a,
The first temperature control means 43 for controlling the heating / cooling means 41 to maintain the temperature of the wall surface of the reaction vessel 31 at a temperature lower than the decomposition reaction temperature of the raw material gas, 43 is a thermocouple 43a for controlling the temperature of the wafer 39 on the quartz boat 38. By detecting the temperature and controlling the heating gas introduction means 40, the temperature of the wafer 39 is reduced.
This is second temperature control means for maintaining the temperature at or above the decomposition reaction temperature of the source gas.
【００１７】上記のように構成された実施例１における
薄膜形成装置においては、まず、第２の温度制御手段４
３の制御によって、ウエハ３９の温度が導入口３３から
導入される原料ガスの分解反応温度以上に保持されるよ
うに、加熱ガス導入手段４０から供給される加熱ガスの
温度が調整される。一方、第１の温度制御手段４２は熱
電対４２ａによって反応槽３１の壁面温度を常時検知
し、壁面温度が原料ガスの分解反応温度に到達しないよ
うに、加熱・冷却手段４１を制御することにより常に分
解反応温度未満に保持している。In the thin film forming apparatus according to the first embodiment configured as described above, first, the second temperature control means 4
By the control of 3, the temperature of the heating gas supplied from the heating gas introduction unit 40 is adjusted such that the temperature of the wafer 39 is maintained at a temperature equal to or higher than the decomposition reaction temperature of the source gas introduced from the introduction port 33. On the other hand, the first temperature control means 42 always detects the wall temperature of the reaction vessel 31 by the thermocouple 42a, and controls the heating / cooling means 41 so that the wall temperature does not reach the decomposition reaction temperature of the raw material gas. It is always kept below the decomposition reaction temperature.
【００１８】例えば、原料ガスとして有機金属ガスであ
るジメチルアルミハライド（ＤＭＡＨ）を利用した薄膜
形成の場合、反応槽温度はＤＭＡＨが分解してアルミニ
ウム（Ａｌ）が堆積しない最大温度（２００℃）以下
に、第１の温度制御手段４２で反応槽３１の壁面温度を
制御し、その後第２の温度制御手段４３の制御により加
熱ガス導入手段４０でガス温度あるいはガス流量を制御
することにより、ウエハ３９およびその雰囲気温度をＤ
ＭＡＨが分解堆積するのに必要な温度（２１０℃〜３０
０℃）まで加熱制御する。次に、反応ガスとしてＤＭＡ
Ｈを反応槽内に供給し、ウエハ上でのみ熱分解反応を起
こし、所望のＡｌ膜を形成する。For example, in the case of forming a thin film using dimethylaluminum halide (DMAH), which is an organic metal gas, as a raw material gas, the temperature of the reaction tank is not higher than the maximum temperature (200 ° C.) at which DMAH is decomposed and aluminum (Al) is not deposited. First, the wall temperature of the reaction vessel 31 is controlled by the first temperature control means 42, and then the gas temperature or gas flow rate is controlled by the heating gas introduction means 40 under the control of the second temperature control means 43. And the ambient temperature is D
The temperature required for MAH to decompose and deposit (210 ° C.-30
(0 ° C). Next, DMA was used as a reaction gas.
H is supplied into the reaction tank to cause a thermal decomposition reaction only on the wafer to form a desired Al film.
【００１９】この場合、第１の温度制御手段４２により
反応槽３１の上流および下流の温度を等温に制御する
と、反応槽３１およびウエハ３９での熱吸収のため、第
２の温度制御手段４３で加熱ガス導入手段４０から導入
される加熱ガスの温度あるいは流量を制御しても、ウエ
ハ３９の温度は反応槽３１の上流と下流では均一となら
ない。このため、第１の温度制御手段４２により反応槽
３１の壁面温度は、上流よりも下流の方をやや高めに制
御して、反応槽３１およびウエハ３９での熱吸収分を補
うことによりウエハ３９の温度の均一化を図っている。In this case, if the upstream and downstream temperatures of the reaction tank 31 are controlled to be isothermal by the first temperature control means 42, the second temperature control means 43 Even if the temperature or the flow rate of the heating gas introduced from the heating gas introduction means 40 is controlled, the temperature of the wafer 39 is not uniform upstream and downstream of the reaction tank 31. For this reason, the wall temperature of the reaction vessel 31 is controlled to be slightly higher in the downstream side than in the upstream side by the first temperature control means 42 to compensate for the heat absorption in the reaction vessel 31 and the wafer 39, thereby increasing the wafer 39 temperature. The temperature is made uniform.
【００２０】この結果、反応槽３１の内壁面１での分解
堆積が抑制され、付着物の剥離がなくなるとともに、付
着物の発生に付随するメンテナンスの頻度が低くなり、
ウエハプロセスの信頼性が高くなる。しかも、第１の温
度制御手段４２の制御により加熱・冷却手段４１で反応
槽３１を加熱しているため、第２の温度制御手段４３に
よって制御される加熱ガス導入手段４０から供給される
加熱ガスの温度は低く、またガス流量は少なくてすむの
で、ウエハ３９の面内およびバッジ内でのウエハ３９の
温度分布も良くなり、石英ボート３８上への付着物も少
なくなる。As a result, the decomposition and deposition on the inner wall surface 1 of the reaction tank 31 are suppressed, the exfoliation of the deposits is eliminated, and the frequency of maintenance accompanying the generation of the deposits is reduced,
The reliability of the wafer process is improved. Moreover, since the reaction tank 31 is heated by the heating / cooling means 41 under the control of the first temperature control means 42, the heating gas supplied from the heating gas introduction means 40 controlled by the second temperature control means 43 Since the temperature of the wafer 39 is low and the gas flow rate is small, the temperature distribution of the wafer 39 in the plane of the wafer 39 and in the badge is improved, and the amount of deposits on the quartz boat 38 is reduced.
【００２１】実施例２．図２はこの発明の実施例２にお
ける薄膜形成装置の構成を示す図、図３は図２に示す薄
膜形成装置の要部を形成するヒータ付きボートの構成を
示す斜視図である。図において図１に示す実施例１と同
様のものは同一符号を付して説明を省略する。４４はボ
ート３８上にウエハ３９と交互に所定の間隔を介して配
設されるウエハ状ヒータ、４５は熱電対４５ａによって
ボート３８上のウエハ３９の温度を検知し、ウエハ状ヒ
ータ４４を制御することによりウエハ３９の温度を、原
料ガスの分解反応温度以上に保持する第２の温度制御手
段である。Embodiment 2 FIG. FIG. 2 is a view showing a configuration of a thin film forming apparatus according to Embodiment 2 of the present invention, and FIG. 3 is a perspective view showing a configuration of a boat with a heater which forms a main part of the thin film forming apparatus shown in FIG. In the figure, the same components as those in the first embodiment shown in FIG. A wafer-like heater 44 is arranged on the boat 38 alternately with the wafer 39 at a predetermined interval. A thermocouple 45a detects the temperature of the wafer 39 on the boat 38 and controls the wafer-like heater 44. This is the second temperature control means for maintaining the temperature of the wafer 39 at or above the decomposition reaction temperature of the source gas.
【００２２】上記のように構成された実施例２における
薄膜形成装置においては、上記実施例１と同様に第１の
温度制御手段４２の制御による加熱・冷却手段４１の働
きにより、反応槽３１の壁面温度は原料ガスの分解反応
温度に到達しないように常時調節され、又、一方、ボー
ト３８上のウエハ３９はウエハ状ヒータ４４によって加
熱され、第２の温度制御手段４５によって原料ガスの分
解反応温度以上に制御されているので、上記実施例１に
おける薄膜形成装置と同様の効果を奏することは言うま
でもなく、さらに、ウエハ状ヒータ４４をウエハ３９と
交互に配設しているので、ウエハ３９の面内およびバッ
ジ内の温度分布を制御することが極めて容易になる。In the thin film forming apparatus of the second embodiment configured as described above, the heating / cooling means 41 controlled by the first temperature control means 42 operates the reaction tank 31 similarly to the first embodiment. The wall surface temperature is constantly adjusted so as not to reach the decomposition reaction temperature of the source gas. On the other hand, the wafer 39 on the boat 38 is heated by the wafer-shaped heater 44, and the second temperature control means 45 performs the decomposition reaction of the source gas. Since the temperature is controlled to be equal to or higher than the temperature, it is needless to say that the same effects as those of the thin film forming apparatus in the first embodiment can be obtained. Further, since the wafer-like heaters 44 are alternately arranged with the wafer 39, It becomes very easy to control the temperature distribution in the plane and in the badge.
【００２３】実施例３．図４はこの発明の実施例３にお
ける薄膜形成装置の構成を示す図である。図において図
１に示す実施例１と同様なものは同一符号を付して説明
を省略する。４６は反応槽３１の外壁を取り囲むように
配設される高周波誘導加熱源、４７は熱電対４７ａによ
ってボート３８上のウエハ３９の温度を検知し、高周波
誘導加熱源４６を制御することによりウエハ３９の温度
を、原料ガスの分解反応温度以上に保持する第２の温度
制御手段である。Embodiment 3 FIG. FIG. 4 is a view showing a configuration of a thin film forming apparatus according to Embodiment 3 of the present invention. In the figure, the same components as those in the first embodiment shown in FIG. Reference numeral 46 denotes a high-frequency induction heating source provided so as to surround the outer wall of the reaction tank 31. Reference numeral 47 denotes a temperature of the wafer 39 on the boat 38 by a thermocouple 47a, and controls the high-frequency induction heating source 46 to control the wafer 39. Is a second temperature control means for maintaining the temperature of the raw material gas equal to or higher than the decomposition reaction temperature of the raw material gas.
【００２４】上記のように構成された実施例３における
薄膜形成装置においては、上記実施例１と同様に第１の
温度制御手段４２の制御による加熱・冷却手段４１の働
きにより、反応槽３１の壁面温度は原料ガスの分解反応
温度に到達しないように常時調節され、又、一方、ボー
ト３８上のウエハ３９は高周波誘導加熱源４６によって
加熱され、第２の温度制御手段４７によって原料ガスの
分解反応温度以上に制御されているので、上記実施例１
における薄膜形成装置と同様の効果を奏することは言う
までもない。In the thin film forming apparatus of the third embodiment configured as described above, the heating / cooling means 41 controlled by the first temperature control means 42 operates the reaction tank 31 similarly to the first embodiment. The wall surface temperature is constantly adjusted so as not to reach the decomposition reaction temperature of the raw material gas. On the other hand, the wafer 39 on the boat 38 is heated by the high-frequency induction heating source 46 and decomposed by the second temperature control means 47. Since the temperature is controlled to be higher than the reaction temperature,
It is needless to say that the same effects as those of the thin film forming apparatus described above can be obtained.
【００２５】実施例４．図５はこの発明の実施例４にお
ける薄膜形成装置の構成を示す図である。図において図
１に示す実施例１と同様なものは同一符号を付して説明
を省略する。４８は内部に空洞４８ａを有して反応槽３
１の底部に立設され、上面にウエハ３９が載置されるウ
エハ支持台、４９，５０は空洞４８ａ内に冷却水を導
入、排出する導入口および排出口、５１は反応槽３１の
天井部に配設される光透過窓、５２はこの光透過窓５１
を介してウエハ支持台４８上のウエハ３９を照射し加熱
する加熱ランプである。Embodiment 4 FIG. FIG. 5 is a diagram showing a configuration of a thin film forming apparatus according to Embodiment 4 of the present invention. In the figure, the same components as those in the first embodiment shown in FIG. Numeral 48 designates a reaction vessel 3 having a cavity 48a therein.
1, a wafer support table on which a wafer 39 is placed, and 49 and 50 are inlets and outlets for introducing and discharging cooling water into the cavity 48a, and 51 is a ceiling of the reaction tank 31. The light transmission window 52 is disposed on the light transmission window 51.
Is a heating lamp for irradiating and heating the wafer 39 on the wafer support table 48 through the.
【００２６】５３は熱電対５３ａによってウエハ支持台
４８上のウエハ３９の温度を検知し、加熱ランプ５２を
制御することによりウエハ３９の温度を、原料ガスの分
解反応温度以上に保持する第２の温度制御手段、５４は
熱電対５４ａによってウエハ支持台４８の温度を検知
し、空洞４８ａ内に導入口４９から導入され排出口５０
から排出される冷却水の流量を制御することにより、ウ
エハ支持台４８の温度を原料ガスの分解反応温度に到達
しないように常時調節する第３の温度制御手段である。Reference numeral 53 denotes a second sensor for detecting the temperature of the wafer 39 on the wafer support table 48 by a thermocouple 53a and controlling the heating lamp 52 to maintain the temperature of the wafer 39 at a temperature equal to or higher than the decomposition reaction temperature of the source gas. The temperature control means 54 detects the temperature of the wafer support base 48 by the thermocouple 54a, and is introduced from the inlet 49 into the cavity 48a through the outlet 50.
This is a third temperature control means for controlling the flow rate of the cooling water discharged from the apparatus so as to constantly adjust the temperature of the wafer support table 48 so as not to reach the decomposition reaction temperature of the source gas.
【００２７】上記のように構成された実施例４における
薄膜形成装置においては、上記実施例１と同様に第１の
温度制御手段４２の制御による加熱・冷却手段４１の働
きにより、反応槽３１の壁面温度は原料ガスの分解反応
温度に到達しないように常時調節され、又、ウエハ支持
台４８上のウエハ３９は加熱ランプ５２によって加熱さ
れ、第２の温度制御手段５３によって原料ガスの分解反
応温度以上に制御されているので、上記各実施例におけ
る薄膜形成装置と同様の効果を奏することは言うまでも
なく、さらに、第３の温度制御手段５４によって空洞４
８ａ内に導入される冷却水の流量を調節して、ウエハ支
持台４８の温度が原料ガスの分解反応温度に到達しない
ように制御されているので、反応槽３１の壁面のみなら
ずウエハ支持台４８上への付着物も少なくなり、付着物
の発生に付随するメンテナンスの頻度も極めて低くな
る。In the thin film forming apparatus of the fourth embodiment configured as described above, the heating / cooling means 41 controlled by the first temperature control means 42 operates the reaction tank 31 similarly to the first embodiment. The wall surface temperature is constantly adjusted so as not to reach the decomposition reaction temperature of the source gas, and the wafer 39 on the wafer support 48 is heated by the heating lamp 52, and the second temperature control means 53 controls the temperature of the decomposition reaction of the source gas. Since the above-described control is performed, it is needless to say that the same effects as those of the thin film forming apparatus in each of the above embodiments can be obtained.
Since the temperature of the wafer support 48 is controlled so as not to reach the decomposition reaction temperature of the raw material gas by adjusting the flow rate of the cooling water introduced into the inside 8a, not only the wall of the reaction tank 31 but also the wafer support The amount of deposits on the surface 48 is reduced, and the frequency of maintenance accompanying the occurrence of the deposits is extremely low.
【００２８】実施例５．図６はこの発明の実施例５にお
ける薄膜形成装置の構成を示す図、図７は図６における
薄膜形成装置の要部を構成する付着物形成部材を示す斜
視図である。図において、図１に示す実施例１と同様な
部分は同一符号を付して説明を省略する。５５は図７に
示すように反応槽３１内の排気口３４近傍に配設される
とともに、円筒上の集合体で形成される付着物形成部材
で、一部に複数のヒータ５６が埋め込まれている。５７
は熱電対５８を介して付着物形成部材５５の温度を所望
の温度に制御する第４の温度制御手段である。Embodiment 5 FIG. FIG. 6 is a diagram showing a configuration of a thin film forming apparatus according to Embodiment 5 of the present invention, and FIG. 7 is a perspective view showing a deposit forming member constituting a main part of the thin film forming apparatus in FIG. In the figure, the same parts as those in the first embodiment shown in FIG. Reference numeral 55 denotes a deposit forming member which is disposed near the exhaust port 34 in the reaction tank 31 as shown in FIG. I have. 57
Is fourth temperature control means for controlling the temperature of the deposit forming member 55 to a desired temperature via the thermocouple 58.
【００２９】上記のように構成された実施例５における
薄膜形成装置においては、第４の温度制御手段５７によ
って付着物形成部材５５の温度を、原料ガスの分解反応
温度（Ｔg）以下で原料ガスの気化温度（Ｔb）以上に制
御するとともに、反応槽３１内のウエハ３９は他の温度
制御手段（図示せず）によって制御される加熱・冷却手
段４１により原料ガスの分解反応温度（Ｔg）以上の所
望の処理温度に加熱制御されている。例えば、原料ガス
として有機金属ガスであるテトラエトキシシラン（ＴＥ
ＯＳ）を利用する場合は、まず、第４の温度制御手段５
７により、付着物形成部材５５の温度をＴＥＯＳが分解
してシリコン酸化物が堆積しない最大温度である約５０
０℃以下で、且つＴＥＯＳ気化温度である１６８℃以上
に制御し、ウエハ３９の温度をＴＥＯＳが分解堆積する
のに必要な温度（６００℃〜８００℃）まで加熱制御す
る。次に、原料ガスとしてＴＥＯＳを反応槽３１内に供
給し、ウエハ３９上で熱分解反応を起こし所望のシリコ
ン酸化膜を形成する。In the thin film forming apparatus according to the fifth embodiment configured as described above, the temperature of the deposit forming member 55 is controlled by the fourth temperature control means 57 to a temperature lower than the decomposition reaction temperature (T g ) of the raw material gas. In addition to controlling the temperature to be equal to or higher than the gas vaporization temperature (T b ), the wafer 39 in the reaction tank 31 is heated and cooled by a heating / cooling unit 41 controlled by another temperature control unit (not shown). g ) The heating is controlled to the above desired processing temperature. For example, tetraethoxysilane (TE) which is an organometallic gas as a source gas is used.
OS), first, the fourth temperature control means 5
7, the temperature of the deposit forming member 55 is reduced to about 50 which is the maximum temperature at which TEOS is decomposed and silicon oxide is not deposited.
The temperature is controlled to be 0 ° C. or lower and at least 168 ° C., which is the TEOS vaporization temperature, and the temperature of the wafer 39 is controlled to a temperature (600 ° C. to 800 ° C.) necessary for TEOS to be decomposed and deposited. Next, TEOS is supplied as a source gas into the reaction tank 31 to cause a thermal decomposition reaction on the wafer 39 to form a desired silicon oxide film.
【００３０】また、原料ガスとしてジメチルアルミハラ
イド（ＤＭＡＨ）を利用した場合は、まず、第４の温度
制御手段５７により、付着物形成部材５５の温度をＤＭ
ＡＨが分解してアルミニウム（Ａ１）が堆積しない最大
温度（材質が石英の場合３００℃）以下で、ＤＭＡＨの
気化温度である１５４℃以上に制御し、ウエハ３９の温
度ＤＭＡＨが分解堆積するのに必要な温度（２１０℃〜
３００℃）まで加熱制御する。次に、原料ガスとしてＤ
ＭＡＨを反応層３１内に供給し、ウエハ上３９で熱分解
反応を起こし所望のＡ１膜を形成する。When dimethylaluminum halide (DMAH) is used as the source gas, first, the temperature of the deposit forming member 55 is adjusted by the fourth temperature control means 57 to DM.
The temperature is controlled to a maximum temperature (300 ° C. when the material is quartz) at which AH is decomposed and aluminum (A1) is not deposited, and is set to 154 ° C. or more, which is a vaporization temperature of DMAH, so that the temperature DMAH of the wafer 39 is decomposed and deposited. Required temperature (210 ° C ~
Heating control to 300 ° C). Next, D is used as a source gas.
MAH is supplied into the reaction layer 31 to cause a thermal decomposition reaction on the wafer 39 to form a desired A1 film.
【００３１】この結果、熱的安定性に乏しい付着物が発
生する付着物形成部材５５の温度が原料ガスおよび原料
ガスの分解物の気化温度より高くなるため、付着物中に
含有される原料の反応副生成物が気化あるいは再分解す
るとき飛散する微細な粒子の発生が無くなり製造歩留り
の低下が改善される。また、付着物形成部材５５の温度
を、原料の分解反応温度以下の高温に維持することで、
強固に付着した緻密な付着物が形成できるため、脆い付
着物が剥離して発生する剥離物による製造歩留まりの低
下が改善される。さらにこの場合、加熱温度を原料ガス
の分解反応温度以下に制御しているので、反応副生成物
の発生による新たな付着物の発生もなく付着物量の増加
もない。しかも、付着物の発生個所は付着物形成部材５
５のみに限られる。また、結果的に付着物形成部材５５
上に発生する付着物は、剥離や飛散を起こさない熱的安
定性の良い緻密な物質であるため、そのメンテナンス
は、従来の排気系全部のメンテナンスと比べると交換す
るだけで済み、極端に容易となる。なお、付着物形成部
材５５の温度を、原料ガスの反応温度に近い高温に制御
するとともにその表面積を大きくすると、反応層３１で
形成される反応副生成物の大部分が、気化温度の低い物
質を含有しない緻密な付着物として付着物形成部材５５
でトラップされるため、熱的に不安定な付着物の剥離や
飛散が原因の製造歩留まりの低下がより改善され、ウエ
ハプロセスの信頼性が向上する。As a result, the temperature of the deposit forming member 55 at which deposits having poor thermal stability are generated is higher than the vaporization temperature of the raw material gas and the decomposition product of the raw material gas. The generation of fine particles scattered when the reaction by-product is vaporized or re-decomposed is eliminated, and the reduction in production yield is improved. In addition, by maintaining the temperature of the deposit forming member 55 at a high temperature equal to or lower than the decomposition reaction temperature of the raw material,
Since a tightly adhered and densely adhered substance can be formed, a decrease in the manufacturing yield due to the exfoliated substance generated by peeling of the brittle extraneous matter is improved. Further, in this case, since the heating temperature is controlled to be equal to or lower than the decomposition reaction temperature of the raw material gas, there is no generation of new deposits due to the generation of reaction by-products and no increase in the amount of deposits. In addition, the place where the deposit is generated is the deposit forming member 5.
Limited to 5 only. Further, as a result, the attached matter forming member 55
The adhering matter on the top is a dense substance with good thermal stability that does not cause peeling or scattering, so maintenance is only required to be exchanged compared to the conventional exhaust system maintenance, making it extremely easy Becomes When the temperature of the deposit forming member 55 is controlled to a high temperature close to the reaction temperature of the raw material gas and the surface area thereof is increased, most of the reaction by-products formed in the reaction layer 31 become substances having a low vaporization temperature. Deposit forming member 55 as a dense deposit containing no
Therefore, a decrease in manufacturing yield due to peeling or scattering of thermally unstable deposits is further improved, and the reliability of the wafer process is improved.
【００３２】実施例６．図８はこの発明の実施例６にお
ける薄膜形成装置の構成を示す図である。図において、
図６に示す実施例５と同様な部分は同一符号を付して説
明を省略する。５９は反応層３１内の排気口近傍に配設
されるとともに、円筒状の集合体で形成される付着物形
成部材、６０は反応層３１の外壁に付着物形成部材５９
を囲繞するように配設される例えばランプ、ヒータ等の
加熱手段で、第４の温度制御手段５７によって制御さ
れ、付着物形成部材５９を所望の処理温度に加熱する。Embodiment 6 FIG. FIG. 8 is a view showing a configuration of a thin film forming apparatus according to Embodiment 6 of the present invention. In the figure,
The same parts as those of the fifth embodiment shown in FIG. Reference numeral 59 denotes a deposit forming member which is disposed in the vicinity of an exhaust port in the reaction layer 31 and is formed of a cylindrical aggregate.
Is heated by a heating means such as a lamp, a heater, or the like, which is disposed so as to surround the member, and heats the deposit forming member 59 to a desired processing temperature.
【００３３】上記のように構成された実施例６における
薄膜形成装置においては、実施例５と同様に第４の温度
制御手段５７によって付着物形成部材５９の温度を、原
料ガスの分解反応温度（Ｔg）以下で原料ガスの気化温
度（Ｔb）以上に制御するとともに、反応層３１内のウ
エハ３９は他の温度制御手段（図示せず）によって制御
される加熱・冷却手段４１により原料ガスの分解反応温
度（Ｔg）以上の所望の処理温度に加熱制御されている
ので、上記実施例５と同様の効果を奏することは言うま
でもない。In the thin film forming apparatus of the sixth embodiment configured as described above, the temperature of the deposit forming member 59 is controlled by the fourth temperature control means 57 in the same manner as in the fifth embodiment, so that the temperature of the material gas decomposition reaction ( T g ) or lower, the temperature is controlled to be equal to or higher than the vaporization temperature (T b ) of the source gas, and the wafer 39 in the reaction layer 31 is heated by the heating / cooling unit 41 controlled by another temperature control unit (not shown). It is needless to say that the same effect as in the fifth embodiment can be obtained since the heating is controlled to a desired processing temperature not lower than the decomposition reaction temperature (T g ) of the above.
【００３４】なお、上記実施例５においては、付着物形
成部材５５は自身に埋め込まれた複数のヒータ５６で加
熱されて温度制御されているのに対して、この実施例６
においては、反応層３１外からのランプ、ヒータ等の加
熱手段６０によって加熱され温度制御されているので、
付着物形成部材５５の構成が比較的に簡単になり加工が
容易となる。又、この場合、温度分布の均一性が若干悪
くなるが、付着物形成部材５５の内厚を厚くし熱伝導性
の良い物質にする等の工夫を凝らせば、温度分布の均一
性も向上し問題もなくなる。In the fifth embodiment, the attached matter forming member 55 is heated by a plurality of heaters 56 embedded therein to control the temperature.
In, since the temperature is controlled by heating by heating means 60 such as a lamp and a heater from outside the reaction layer 31,
The structure of the attached matter forming member 55 is relatively simple, and processing is easy. Further, in this case, the uniformity of the temperature distribution is slightly deteriorated. However, if various measures such as increasing the inner thickness of the attached matter forming member 55 and using a material having good thermal conductivity are used, the uniformity of the temperature distribution can be improved. No more problems.
【００３５】実施例７．図９はこの発明の実施例７にお
ける薄膜形成装置の構成を示す図である。図において、
図６に示す実施例５と同様な部分は同一符号を付して説
明を省略する。６１は反応層３１内の排気口３４近傍に
配設される付着物形成部材で、反応層３１の内壁に沿っ
た器状に形成され、排気口３４側の側面に導出口６１ａ
が、又、この導出口６１ａと反対側の側面には導入口６
１ｂが穿設されている。６２は原料ガス以外の例えばＨ
ｅ、Ａｒ等の不活性ガスを貯溜し、必要に応じて送出す
るガス供給手段、６３はこのガス供給手段６２から送出
される不活性ガスを所望の処理温度に加熱制御するガス
加熱手段、６４は反応層３１の側壁の付着物形成部材６
１の導入口６１ｂと対向する位置に配設され、ガス供給
手段６２から送出されガス加熱手段６３で加熱された不
活性ガスを反応層３１内に導く供給口である。Embodiment 7 FIG. FIG. 9 is a diagram showing a configuration of a thin film forming apparatus according to Embodiment 7 of the present invention. In the figure,
The same parts as those of the fifth embodiment shown in FIG. Reference numeral 61 denotes an attachment forming member disposed in the vicinity of the exhaust port 34 in the reaction layer 31, formed in a container shape along the inner wall of the reaction layer 31, and provided with an outlet port 61 a on the side surface on the exhaust port 34 side.
However, the inlet 6a is provided on the side opposite to the outlet 61a.
1b is drilled. Reference numeral 62 denotes, for example, H other than the source gas.
e, a gas supply means for storing an inert gas such as Ar and sending it out as necessary; 63 is a gas heating means for heating and controlling the inert gas sent out from the gas supply means 62 to a desired processing temperature; Is the deposit forming member 6 on the side wall of the reaction layer 31.
The supply port is provided at a position facing the first inlet 61 b and guides the inert gas sent from the gas supply unit 62 and heated by the gas heating unit 63 into the reaction layer 31.
【００３６】上記のように構成された実施例７における
薄膜形成装置においては、ガス供給手段６２から送出さ
れガス加熱手段６３で加熱された不活性ガスによって付
着物形成部材６１の温度を、原料ガスの分解反応温度
（Ｔg）以下で原料ガスの気化温度（Ｔb）以上に制御す
るとともに、反応層３１内のウエハ３９は他の温度制御
手段（図示せず）によって制御される加熱・冷却手段４
１により原料ガスの分解反応温度（Ｔg）以上の所望の
処理温度に加熱制御されているので、上記各実施例と同
様の効果を奏することは言うまでもない。In the thin film forming apparatus according to the seventh embodiment configured as described above, the temperature of the deposit forming member 61 is controlled by the inert gas sent from the gas supply means 62 and heated by the gas heating means 63. Is controlled to be equal to or lower than the decomposition reaction temperature (T g ) of the raw material gas and equal to or higher than the vaporization temperature (T b ) of the source gas, and the wafer 39 in the reaction layer 31 is heated and cooled by another temperature control means (not shown). Means 4
Since the heating is controlled to a desired processing temperature equal to or higher than the decomposition reaction temperature (T g ) of the raw material gas by the method 1, it is needless to say that the same effects as those of the above embodiments can be obtained.
【００３７】この場合、供給口６４から反応槽３１内に
導かれる不活性ガスにより、排気系部位の雰囲気全体が
原料ガスの分解温度に近い高温に制御されているので、
反応槽３１で形成される反応副生成物の大部分が、気化
温度の低い物質を含有しない緻密な付着物として付着物
形成部材６１でトラップされるため、熱的に不安定な付
着物の剥離や飛散が原因の製造歩留まりの低下がより改
善され、ウエハプロセスの信頼性が向上する。In this case, the entire atmosphere of the exhaust system is controlled to a high temperature close to the decomposition temperature of the raw material gas by the inert gas introduced into the reaction tank 31 from the supply port 64.
Most of the reaction by-products formed in the reaction tank 31 are trapped by the deposit forming member 61 as dense deposits containing no substance having a low vaporization temperature, and thus thermally unstable deposits are separated. The reduction in the manufacturing yield due to the scattering and scattering is further improved, and the reliability of the wafer process is improved.
【００３８】又、供給口６４から導入される不活性ガス
の量がガス導入口３３からのガス供給量に比して多い場
合、この不活性ガスの流れによって反応槽３１内のウエ
ハ３９設置部における原料ガスの流れが乱され、ウエハ
３９上に形成される膜の均一性が悪くなるが、この実施
例７においては、付着物形成部材６１を反応槽３１の内
壁に沿った器状に形成し、且つその側壁の反応槽３１の
供給口６４と対向する位置に導入口６１ｂを、又、排気
口３４と対向する位置に導出口６１ａを設けて、まず、
供給口６４から反応槽３１内に供給される不活性ガスを
導入口６１ｂから付着物形成部材６１の内面側に導き、
内面を沿わせることによって付着物形成部材６１自身を
加熱した後、導出口６１ａから排気口３４へ排出するよ
うにしているので、不活性ガスの流れによって原料ガス
の流れを乱すこともなく、ウエハ３９上に形成される膜
の均一性が悪くなることもない。When the amount of the inert gas introduced from the supply port 64 is larger than the amount of the gas supplied from the gas introduction port 33 , the flow of the inert gas causes the flow of the inert gas into the wafer 39 installation section in the reaction tank 31. In this embodiment, the flow of the source gas is disturbed, and the uniformity of the film formed on the wafer 39 is deteriorated. However, in the seventh embodiment, the deposit forming member 61 is formed in a container shape along the inner wall of the reaction tank 31. In addition, an inlet 61b is provided at a position on the side wall facing the supply port 64 of the reaction tank 31, and an outlet 61a is provided at a position facing the exhaust port 34.
Inert gas supplied into the reaction tank 31 from the supply port 64 is guided from the introduction port 61b to the inner surface side of the deposit forming member 61,
Since the adhered material forming member 61 itself is heated along the inner surface and then discharged from the outlet 61a to the exhaust port 34, the flow of the source gas is not disturbed by the flow of the inert gas, and the wafer is not disturbed. The uniformity of the film formed on 39 does not deteriorate.
【００３９】実施例８．図１０はこの発明の実施例８に
おける薄膜形成装置の構成を示す図である。図におい
て、図９に示す実施例７と同様な部分は同一符号を付し
て説明を省略する。６５は複数の反応性ガスを貯溜し、
形成する膜に応じて所望のガスを送出するガス供給手段
で、酸化膜を形成する場合は、反応ガスとしてＯ3、
Ｏ2、Ｎ2Ｏ等の酸化ガスを送出し、メタル膜あるいはシ
リコン膜を形成する場合は、Ｈ2、Ｆ2、Ｃｌ2、ＨＦ、
ＨＣｌ、ＣｌＦ3、ＮＦ3、ＳｉＨ4等の還元ガスを送出
し、窒化膜を形成する場合は、Ｎ2、ＮＨ３等の窒化ガ
スを送出する。Embodiment 8 FIG. FIG. 10 is a diagram showing a configuration of a thin film forming apparatus according to Embodiment 8 of the present invention. In the figure, the same parts as those of the seventh embodiment shown in FIG. 65 stores a plurality of reactive gases,
When an oxide film is formed by gas supply means for sending out a desired gas according to the film to be formed, O 3 ,
When an oxidizing gas such as O 2 or N 2 O is sent out to form a metal film or a silicon film, H 2 , F 2 , Cl 2 , HF,
When a reducing gas such as HCl, ClF 3 , NF 3 or SiH 4 is sent to form a nitride film, a nitriding gas such as N 2 or NH 3 is sent.
【００４０】上記のように構成された実施例８によれ
ば、実施例７の場合と同様に付着物形成部材６１を反応
槽３１の内壁に沿った器状に形成し、且つその側壁の反
応槽３１の供給口６４と対向する位置に導入口６１ｂ
を、又、排気口３４と対向する位置に導出口６１ａを設
けて、まず、供給口６４から反応槽３１内に供給される
反応性ガスを導入口６１ｂから付着物形成部材６１の内
面側に導き、内面を沿わせることによって付着物形成部
材６１自身を加熱した後、導出口６１ａから排気口３４
へ排出するようにしており、又、反応性ガスは上記した
ように形成する膜に応じて所望のガスを導入するように
しているので、反応性ガスの影響が反応槽３１内のウエ
ハ３９上の膜形成に及ぶこともなく、上記各実施例と同
様の効果を得ることは勿論のこと、特にこの場合、反応
性ガスによる反応副生成物の安定化の効果が排気系部位
の雰囲気全体に及ぶため、原料ガスの分解反応温度に近
い高温まで制御することなく、反応槽３１で形成される
反応副生成物の大部分が、気化温度の低い物質を含有し
ない緻密な付着物として付着物形成部材６１でトラップ
することができるので、熱的に不安定な付着物の剥離や
飛散が原因の製造歩留まりの低下がより改善され、ウエ
ハプロセスの信頼性が向上する。According to the eighth embodiment configured as described above, the deposit forming member 61 is formed in a vessel shape along the inner wall of the reaction tank 31 and the reaction of the side wall is performed in the same manner as in the seventh embodiment. Introducing port 61b at a position facing supply port 64 of tank 31
An outlet 61a is provided at a position facing the exhaust port 34. First, the reactive gas supplied from the supply port 64 into the reaction tank 31 is supplied from the inlet 61b to the inner surface side of the deposit forming member 61. After heating the attached matter forming member 61 itself by guiding it along the inner surface, the outlet 61 a
The reactive gas is introduced as desired gas in accordance with the film to be formed as described above. Of the above-described embodiments without affecting the film formation. Particularly, in this case, the effect of stabilizing the reaction by-products by the reactive gas is reduced to the entire atmosphere of the exhaust system portion. Most of the reaction by-products formed in the reaction vessel 31 are formed as dense deposits containing no substance having a low vaporization temperature without controlling the temperature to a high temperature close to the decomposition reaction temperature of the raw material gas. Since trapping can be performed by the member 61, a decrease in manufacturing yield due to peeling and scattering of thermally unstable deposits is further improved, and reliability of the wafer process is improved.
【００４１】実施例９．図１１はこの発明の実施例９に
おける薄膜形成装置の構成を示す図である。図におい
て、図１３に示す従来の反応槽内部からの局所加熱方式
による薄膜形成装置と同様な部分は同一符号を付して説
明を省略する。６６は反応槽１１内の排気口１３近傍に
配設される付着物形成部材で、図示はしないが内部にヒ
ータが埋め込まれている。６７は熱電対６８を介して付
着物形成部材６６の温度を所望の処理温度に制御する第
４の温度制御手段である。Embodiment 9 FIG. FIG. 11 is a view showing a configuration of a thin film forming apparatus according to Embodiment 9 of the present invention. In the figure, the same parts as those of the conventional apparatus for forming a thin film by the local heating method from the inside of the reaction tank shown in FIG. Reference numeral 66 denotes a deposit forming member disposed in the vicinity of the exhaust port 13 in the reaction tank 11, and although not shown, a heater is embedded therein. Reference numeral 67 denotes fourth temperature control means for controlling the temperature of the attached matter forming member 66 via the thermocouple 68 to a desired processing temperature.
【００４２】上記のように構成された実施例９における
薄膜形成装置においては、第４の温度制御手段６７によ
って付着物形成部材６６の温度を、原料ガスの分解反応
温度（Ｔg）で原料ガスの気化温度（Ｔb）以上に制御す
るとともに、反応槽１１内のウエハ１７は他の温度制御
手段（図示せず）によって制御されるヒータ１６により
原料ガスの分解反応温度（Ｔg）以上の所望の処理温度
に加熱制御されているので、上記各実施例と同様の効果
を奏することは言うまでもない。In the thin film forming apparatus according to the ninth embodiment configured as described above, the temperature of the deposit forming member 66 is changed by the fourth temperature control means 67 to the raw material gas decomposition reaction temperature (T g ). the controls to the vaporization temperature (T b) above, the wafer 17 in the reaction vessel 11 other temperature control means by the heater 16 which is controlled by the (not shown) decomposition reaction temperature of the raw material gas (T g) or more Since the heating is controlled to a desired processing temperature, it goes without saying that the same effects as those of the above embodiments can be obtained.
【００４３】又、この場合、付着物形成部材６６の温度
を、原料ガスの分解反応温度に近い高温に制御するとと
ともにその表面積を大きくすると、反応槽１１で形成さ
れる反応副生成物の大部分が、気化温度の低い物質を含
有しない緻密な付着物として付着物形成部材でトラップ
されるため、熱的に不安定な付着物の剥離や飛散が原因
の製造歩留まりの低下がより改善され、ウエハプロセス
の信頼性が向上する。In this case, when the temperature of the deposit forming member 66 is controlled to a high temperature close to the decomposition reaction temperature of the raw material gas and the surface area is increased, most of the reaction by-products formed in the reaction tank 11 are formed. However, since it is trapped by the deposit forming member as a dense deposit that does not contain a substance having a low vaporization temperature, a decrease in the manufacturing yield due to peeling or scattering of the thermally unstable deposit is further improved, and the wafer is removed. Process reliability is improved.
【００４４】実施例１０．なお、上記実施例９は反応槽
内部からの局所加熱方式による薄膜形成装置に適用した
場合について説明したが、反応槽外部からの局所加熱方
式による薄膜形成装置に適用しても同様の効果を得るこ
とができる。Embodiment 10 FIG. Although the ninth embodiment described the case where the present invention is applied to a thin film forming apparatus using a local heating method from the inside of the reaction tank, the same effect can be obtained by applying the present invention to a thin film forming apparatus using a local heating method from outside the reaction tank. be able to.
【００４５】実施例１１．又、上記各実施例５〜８は雰
囲気加熱方式による薄膜形成装置に適用した場合につい
て説明したが、実施例９および１０に示すような反応槽
内部および外部からの局所加熱方式による薄膜形成装置
に適用しても同様の効果が得られることは言うまでもな
い。Embodiment 11 FIG. Although each of the above Examples 5 to 8 has been described as applied to a thin film forming apparatus using an atmosphere heating method, the present invention is applied to a thin film forming apparatus using a local heating method from inside and outside of a reaction tank as shown in Examples 9 and 10. It goes without saying that the same effect can be obtained by applying the same.
【００４６】[0046]
【発明の効果】以上のように、この発明の請求項１によ
れば、反応槽の温度を、原料ガス流の上流側よりも下流
側において高く、かつ原料ガスの分解反応温度未満に制
御する第１の温度制御手段とウエハおよびウエハ近傍の
雰囲気温度を原料ガスの分解反応温度以上に制御する第
２の温度制御手段とを備え、又、この発明の請求項２に
よれば、請求項１において第２の温度制御手段をウエハ
を収容するボート上に配設されたウエハ状ヒータで構成
し、又、この発明の請求項３によれば、請求項１におい
てウエハ支持台上のウエハを第２の温度制御手段として
の加熱ランプによって加熱するとともに、第３の温度制
御手段によって支持台の温度を原料ガスの分解反応温度
未満に制御することによって、反応槽の内壁面やウエハ
支持台の表面に付着物が発生するのを阻止し、かつ原料
ガス流上流における反応層およびウエハでの熱吸収を補
ってウエハの温度均一化を図って不良品の発生を防止
し、製造歩留まりの大幅な向上を提供することができ
る。又、この発明の請求項４によれば、反応槽内のウエ
ハより排気口側に配設される付着物形成部材と、この付
着物形成部材の温度Ｔ1を、式Ｔb≦Ｔ1≦Ｔg（但し、Ｔ
b：原料ガスの気化温度、Ｔg：原料ガスの分解反応温
度）を満足するように制御する第４の温度制御手段とを
備え、又、この発明の請求項５によれば、請求項４にお
いて第４の温度制御手段は反応槽外から排気口に向けて
供給される原料ガス以外の第２のガスで付着物形成部材
を加熱するようにしたので、反応槽の内壁面やウエハ支
持台の表面に付着物が発生するのを阻止して不良品の発
生を防止するとともに、反応槽内の低温部に発生する付
着物を熱的に安定性の良いものとすることができ、製造
歩留まりの大幅な向上ならびにメンテナンスの容易な薄
膜形成装置を提供することができる。As described above, according to the first aspect of the present invention, the temperature of the reaction vessel is set to be lower than the upstream side of the raw material gas flow.
A first temperature control means for controlling the temperature higher than the decomposition reaction temperature of the source gas and a second temperature control means for controlling the atmosphere temperature in the vicinity of the wafer and the wafer to be equal to or higher than the decomposition reaction temperature of the source gas; According to a second aspect of the present invention, in the first aspect, the second temperature control means is constituted by a wafer-like heater disposed on a boat for accommodating a wafer. According to the first aspect, the wafer on the wafer support is heated by the heating lamp as the second temperature control means, and the temperature of the support is controlled to be lower than the decomposition reaction temperature of the source gas by the third temperature control means. By doing so, the inner wall of the reaction tank and the wafer
Prevents the formation of deposits on the surface of the support
Compensates for heat absorption in the reaction layer and wafer upstream of the gas flow
The temperature of the wafer to prevent defective products
And can provide significant improvement in manufacturing yield
You. Further, according to the fourth aspect of the present invention, the deposit forming member disposed on the exhaust port side of the wafer in the reaction tank and the temperature T 1 of the deposit forming member are expressed by the equation T b ≦ T 1 ≦ T g (However, T
b : a vaporization temperature of the raw material gas, and T g : a decomposition reaction temperature of the raw material gas, and fourth temperature control means for controlling the temperature of the raw material gas. The fourth temperature control means heats the deposit forming member with a second gas other than the raw material gas supplied from the outside of the reaction vessel toward the exhaust port. In addition to preventing the generation of rejects by preventing the generation of adhering substances on the surface of the substrate, the adhering substances generated in the low-temperature portion in the reaction tank can be made to have good thermal stability, and the production yield can be improved. It is possible to provide a thin-film forming apparatus that is significantly improved and easy to maintain.
【図１】この発明の実施例１における薄膜形成装置の構
成を示す図である。FIG. 1 is a diagram illustrating a configuration of a thin film forming apparatus according to a first embodiment of the present invention.
【図２】この発明の実施例２における薄膜形成装置の構
成を示す図である。FIG. 2 is a diagram illustrating a configuration of a thin film forming apparatus according to a second embodiment of the present invention.
【図３】図２に示す薄膜形成装置の要部を形成するヒー
タ付きボートの構成を示す斜視図である。FIG. 3 is a perspective view showing a configuration of a boat with a heater, which forms a main part of the thin film forming apparatus shown in FIG.
【図４】この発明の実施例３における薄膜形成装置の構
成を示す図である。FIG. 4 is a diagram illustrating a configuration of a thin film forming apparatus according to a third embodiment of the present invention.
【図５】この発明の実施例４における薄膜形成装置の構
成を示す図である。FIG. 5 is a diagram illustrating a configuration of a thin film forming apparatus according to a fourth embodiment of the present invention.
【図６】この発明の実施例５における薄膜形成装置の構
成を示す図である。FIG. 6 is a diagram illustrating a configuration of a thin film forming apparatus according to a fifth embodiment of the present invention.
【図７】図６における薄膜形成装置の要部を構成する付
着物形成部材を示す斜視図である。FIG. 7 is a perspective view showing an attached matter forming member constituting a main part of the thin film forming apparatus in FIG.
【図８】この発明の実施例６における薄膜形成装置の構
成を示す図である。FIG. 8 is a diagram showing a configuration of a thin film forming apparatus according to a sixth embodiment of the present invention.
【図９】この発明の実施例７における薄膜形成装置の構
成を示す図である。FIG. 9 is a diagram showing a configuration of a thin film forming apparatus according to a seventh embodiment of the present invention.
【図１０】この発明の実施例８における薄膜形成装置の
構成を示す図である。FIG. 10 is a diagram showing a configuration of a thin film forming apparatus according to an eighth embodiment of the present invention.
【図１１】この発明の実施例９における薄膜形成装置の
構成を示す図である。FIG. 11 is a diagram showing a configuration of a thin film forming apparatus according to a ninth embodiment of the present invention.
【図１２】従来の雰囲気加熱方式の薄膜形成装置を示す
図である。FIG. 12 is a view showing a conventional atmosphere heating type thin film forming apparatus.
【図１３】従来の反応槽内部からの局所加熱方式による
薄膜形成装置を示す断面図である。FIG. 13 is a cross-sectional view showing a conventional thin film forming apparatus using a local heating method from inside a reaction tank.
【図１４】従来の反応槽外部からの局所加熱方式による
薄膜形成装置を示す断面図である。FIG. 14 is a cross-sectional view showing a conventional thin film forming apparatus using a local heating method from the outside of a reaction tank.
３１ 反応槽 ３８ 石英ボート ３９ ウエハ ４２ 第１の温度制御手段 ４３、４５、４７、５３ 第２の温度制御手段 ４４ ウエハ状ヒータ ４８ ウエハ支持台 ５２ 加熱ランプ ５４ 第３の温度制御手段 ５５、５９、６１、６６ 付着物形成部材 ５６ ヒータ ５７、６７ 第４の温度制御手段 ５８、６８ 熱電対 ６０ 加熱手段 ６１ａ 導出口 ６１ｂ 導入口 ６２、６５ ガス供給手段 ６３ ガス加熱手段 ６４ 供給口 31 reaction tank 38 quartz boat 39 wafer 42 first temperature control means 43, 45, 47, 53 second temperature control means 44 wafer-like heater 48 wafer support 52 heating lamp 54 third temperature control means 55, 59 61, 66 Deposit forming member 56 Heater 57, 67 Fourth temperature control means 58, 68 Thermocouple 60 Heating means 61a Outlet 61b Inlet 62, 65 Gas supply means 63 Gas heating means 64 Supply port
───────────────────────────────────────────────────── フロントページの続き (72)発明者 神立 信一 伊丹市瑞原４丁目１番地 三菱電機株式 会社 北伊丹製作所内 (72)発明者 稲葉 豊 伊丹市瑞原４丁目１番地 三菱電機株式 会社 北伊丹製作所内 (72)発明者 高橋 広成 伊丹市瑞原４丁目１番地 三菱電機株式 会社 北伊丹製作所内 (56)参考文献 特開 昭63−250465（ＪＰ，Ａ) 特開 昭64−17424（ＪＰ，Ａ) 特開 平２−148717（ＪＰ，Ａ) 特開 平４−67627（ＪＰ，Ａ) 特開 平２−138727（ＪＰ，Ａ) 実開 昭56−134742（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/205 C23C 16/52 H01L 21/31 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Shinichi Shindachi 4-1-1 Mizuhara, Itami-shi Mitsubishi Electric Corporation Kita-Itami Works (72) Inventor Yutaka Inaba 4-1-1 Mizuhara Itami-shi Mitsubishi Electric Corporation Kita Itami In the factory (72) Inventor Hironari Takahashi 4-1-1 Mizuhara, Itami-shi In the Kita-Itami Works, Mitsubishi Electric Corporation (56) References JP-A-63-250465 (JP, A) JP-A-64-17424 (JP, A) JP-A-2-148717 (JP, A) JP-A-4-67627 (JP, A) JP-A-2-138727 (JP, A) Jikai Sho 56-134742 (JP, U) (58) Survey Field (Int.Cl. 7 , DB name) H01L 21/205 C23C 16/52 H01L 21/31
Claims (5)
記ウエハ上に原料ガスを流して加熱することにより上記
ウエハ上に薄膜を堆積させる薄膜形成装置において、上
記反応槽の温度を、上記原料ガス流の上流側よりも下流
側において高く、かつ上記原料ガスの分解反応温度未満
に制御する第１の温度制御手段と、上記ウエハおよびウ
エハ近傍の雰囲気温度を上記原料ガスの分解反応温度以
上に制御する第２の温度制御手段とを備えたことを特徴
とする薄膜形成装置。1. A with accommodating the wafers into the reaction vessel in the thin film forming apparatus for depositing a thin film on the wafer by heating by flowing a raw material gas on the wafer, the temperature of the reaction vessel, the raw material gas Downstream from upstream of flow
High in the side, and the first temperature control means and said wafer and a second temperature control means for the ambient temperature near the wafer is controlled to higher than the decomposition reaction temperature of the raw material gas controlled to below the decomposition reaction temperature of the raw material gas A thin film forming apparatus comprising:
ボート上に配設されたウエハ状ヒータであることを特徴
とする請求項１記載の薄膜形成装置。2. The thin film forming apparatus according to claim 1, wherein said second temperature control means is a wafer-like heater disposed on a boat for storing wafers.
ともに上方に配設された第２の温度制御手段としての加
熱ランプによって加熱され且つ上記支持台の温度を原料
ガスの分解反応温度未満に制御する第３の温度制御手段
を備えたことを特徴とする請求項１記載の薄膜形成装
置。3. The wafer is placed on a wafer support and is heated by a heating lamp as a second temperature control means disposed above, and the temperature of the support is lower than the decomposition reaction temperature of the source gas. 2. A thin film forming apparatus according to claim 1, further comprising a third temperature control means for controlling the temperature of the thin film.
記ウエハ上に原料ガスを流して加熱することにより上記
ウエハ上に薄膜を堆積させる薄膜形成装置において、上
記反応槽内の上記ウエハより排気口側に配設される付着
物形成部材と、この付着物形成部材の温度Ｔ1を、 Ｔb≦Ｔ1≦Ｔg 但し Ｔb：原料ガスの気化温度 Ｔg：原料ガスの分解反応温度 上式を満足するように制御する第４の温度制御手段とを
備えたことを特徴とする薄膜形成装置。4. A thin film forming apparatus for accommodating a wafer in a reaction vessel and depositing a thin film on the wafer by flowing a source gas on the wafer and heating the wafer, wherein an exhaust port is provided from the wafer in the reaction vessel. And the temperature T 1 of the attached substance forming member, Tb ≦ T 1 ≦ T g, where T b : vaporization temperature of the source gas T g : decomposition reaction temperature of the source gas And a fourth temperature control means for controlling so as to satisfy the expression.
気口に向けて供給される原料ガス以外の第２のガスで付
着物形成部材を加熱するようにしたことを特徴とする請
求項４記載の薄膜形成装置。5. The apparatus according to claim 1, wherein the fourth temperature control means heats the deposit forming member with a second gas other than the raw material gas supplied from the outside of the reaction vessel toward the exhaust port. Item 5. A thin film forming apparatus according to item 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13865692A JP3179864B2 (en) | 1991-11-18 | 1992-05-29 | Thin film forming equipment |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3-301447 | 1991-11-18 | ||
| JP30144791 | 1991-11-18 | ||
| JP13865692A JP3179864B2 (en) | 1991-11-18 | 1992-05-29 | Thin film forming equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05198520A JPH05198520A (en) | 1993-08-06 |
| JP3179864B2 true JP3179864B2 (en) | 2001-06-25 |
Family
ID=26471652
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13865692A Expired - Lifetime JP3179864B2 (en) | 1991-11-18 | 1992-05-29 | Thin film forming equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3179864B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USD961187S1 (en) | 2017-11-30 | 2022-08-23 | Luigi FIORENTINO | Food product |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001073159A1 (en) | 2000-03-27 | 2001-10-04 | Mitsubishi Heavy Industries, Ltd. | Method for forming metallic film and apparatus for forming the same |
| JP2002261030A (en) * | 2001-03-02 | 2002-09-13 | Sumitomo Chem Co Ltd | Method and apparatus for 3-5-family compound semiconductor epitaxial growth |
| JP5290841B2 (en) * | 2009-04-01 | 2013-09-18 | キヤノンアネルバ株式会社 | Metal film production apparatus and metal film production method |
| JP6125846B2 (en) | 2012-03-22 | 2017-05-10 | 株式会社日立国際電気 | Semiconductor device manufacturing method, substrate processing method, substrate processing apparatus, and program |
| JP5800969B1 (en) * | 2014-08-27 | 2015-10-28 | 株式会社日立国際電気 | Substrate processing apparatus, semiconductor device manufacturing method, program, and recording medium |
| JP6342370B2 (en) | 2015-09-07 | 2018-06-13 | 株式会社東芝 | Semiconductor manufacturing apparatus and removal apparatus for semiconductor manufacturing apparatus |
-
1992
- 1992-05-29 JP JP13865692A patent/JP3179864B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USD961187S1 (en) | 2017-11-30 | 2022-08-23 | Luigi FIORENTINO | Food product |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05198520A (en) | 1993-08-06 |
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