JP5800969B1 - Substrate processing apparatus, semiconductor device manufacturing method, program, and recording medium - Google Patents

Abstract

Provided are a substrate processing apparatus and a semiconductor device manufacturing method capable of forming a film having good characteristics even when gas exhaust is performed using an exhaust buffer chamber. A processing space for processing a substrate mounted on a substrate mounting surface of a substrate mounting table, a gas supply system for supplying gas into the processing space from a side facing the substrate mounting surface, An exhaust buffer chamber configured to include at least a communication hole communicating with the processing space at a side of the processing space, and a gas flow blocking wall extending in a direction to block a gas flow through the communication hole; A substrate processing apparatus having a first heating unit for heating the buffer chamber is provided. [Selection] Figure 2

Description

  The present invention relates to a substrate processing apparatus, a semiconductor device manufacturing method, a program, and a recording medium.

  In general, in a manufacturing process of a semiconductor device, a substrate processing apparatus that performs a process such as a film forming process on a substrate such as a wafer is used. As substrate processing apparatuses, single-wafer processing apparatuses that process substrates one by one are becoming widespread as the size of substrates increases and the accuracy of process processing increases.

  In the single wafer type apparatus, in order to increase the use efficiency of the gas, for example, the gas is supplied from above the substrate processing surface and the gas is exhausted from the side of the substrate. When exhausting from the side, a buffer chamber is provided for uniform exhaust.

  Residual gas or the like is supplied to the above-described exhaust buffer chamber, but the residual gas may cause a film to adhere to the wall of the buffer chamber. Such a film may flow back into the processing chamber and adversely affect the film characteristics of the substrate.

  Therefore, an object of the present invention is to provide a substrate processing apparatus and a semiconductor device manufacturing method capable of forming a film with good characteristics even when gas exhaust is performed using an exhaust buffer chamber.

According to one aspect of the invention,
A processing space for processing a substrate placed on the substrate placement surface of the substrate placement table;
A gas supply system for supplying gas into the processing space from the side facing the substrate mounting surface;
An exhaust buffer chamber configured to include at least a communication hole communicating with the processing space at a side of the processing space, and a gas flow blocking wall extending in a direction to block a gas flow through the communication hole;
There is provided a substrate processing apparatus having a first heating unit for heating the buffer chamber.

According to another aspect of the invention,
A step of placing the substrate on the substrate placement surface of the substrate placement table contained in the processing space;
While heating the exhaust buffer chamber having a communication hole communicating with the processing space on the side of the processing space and a gas flow blocking wall extending in a direction blocking the flow of gas through the communication hole. And a step of supplying a gas into the processing space from the side facing the substrate mounting surface.

According to yet another aspect of the invention,
A step of placing the substrate on the substrate placement surface of the substrate placement table contained in the processing space;
While heating the exhaust buffer chamber having a communication hole communicating with the processing space on the side of the processing space and a gas flow blocking wall extending in a direction blocking the flow of gas through the communication hole. A program for executing a step of supplying a gas into the processing space from the side facing the substrate mounting surface is provided.

According to yet another aspect of the invention,
A step of placing the substrate on the substrate placement surface of the substrate placement table contained in the processing space;
While heating the exhaust buffer chamber having a communication hole communicating with the processing space on the side of the processing space and a gas flow blocking wall extending in a direction blocking the flow of gas through the communication hole. There is provided a computer-readable recording medium storing a program for executing a step of supplying a gas into the processing space from a side facing the substrate mounting surface.

  According to the present invention, a film having good characteristics can be formed even when gas is exhausted using the exhaust buffer chamber.

It is a schematic block diagram of the single wafer type substrate processing apparatus concerning one embodiment of the present invention. It is a perspective view which shows typically a specific example of the whole shape of the exhaust buffer chamber in the substrate processing apparatus of FIG. It is a sectional side view which shows typically a specific example of the cross-sectional shape of the exhaust buffer chamber in the substrate processing apparatus of FIG. It is a flowchart which shows the substrate processing process and cleaning process which concern on one Embodiment of this invention. It is a flowchart which shows the detail of the film-forming process in FIG. It is a perspective view which shows typically another embodiment of the whole shape of the exhaust buffer chamber of FIG.

<One Embodiment of the Present Invention>
An embodiment of the present invention will be described below with reference to the drawings.

(1) Configuration of Substrate Processing Apparatus The substrate processing apparatus according to the present embodiment is configured as a single-wafer type substrate processing apparatus that processes a substrate to be processed one by one.
Examples of the substrate to be processed include a semiconductor wafer substrate (hereinafter simply referred to as “wafer”) on which a semiconductor device (semiconductor device) is fabricated.
Examples of processing performed on such a substrate include etching, ashing, and film formation processing. In this embodiment, the film formation processing is particularly performed. A typical example of the film forming process is an alternate supply process.

  Hereinafter, the configuration of the substrate processing apparatus according to the present embodiment will be described with reference to FIG. FIG. 1 is a schematic configuration diagram of a single-wafer type substrate processing apparatus according to the present embodiment.

(Processing container)
As shown in FIG. 1, the substrate processing apparatus 100 includes a processing container 202. The processing container 202 is configured as a flat sealed container having a circular cross section, for example. Moreover, the processing container 202 is comprised, for example with metal materials, such as aluminum (Al) and stainless steel (SUS). In the processing container 202, a processing space 201 for processing a wafer 200 such as a silicon wafer as a substrate and a transfer space 203 through which the wafer 200 passes when the wafer 200 is transferred to the processing space 201 are formed. The processing container 202 includes an upper container 202a and a lower container 202b. A partition plate 204 is provided between the upper container 202a and the lower container 202b.

  An exhaust buffer chamber 209 is provided in the vicinity of the outer peripheral edge inside the upper container 202a. The exhaust buffer chamber 209 is provided with a heater 209a for heating the exhaust buffer chamber. Details of the exhaust buffer chamber 209 will be described later.

  A substrate loading / unloading port 206 adjacent to the gate valve 205 is provided on the side surface of the lower container 202b, and the wafer 200 moves between a transfer chamber (not shown) via the substrate loading / unloading port 206. A plurality of lift pins 207 are provided at the bottom of the lower container 202b. Furthermore, the lower container 202b is grounded.

(Substrate support part)
In the processing space 201, a substrate support unit 210 that supports the wafer 200 is provided. The substrate support unit 210 includes a substrate placement surface 211 on which the wafer 200 is placed, a substrate placement table 212 having the substrate placement surface 211 on the surface, and a heater 213 (first step) included in the substrate placement table 212. Second heating part). The substrate mounting table 212 is provided with through holes 214 through which the lift pins 207 pass, respectively, at positions corresponding to the lift pins 207.

  The substrate mounting table 212 is supported by the shaft 217. The shaft 217 passes through the bottom of the processing container 202, and is further connected to the lifting mechanism 218 outside the processing container 202. By operating the elevating mechanism 218 to elevate and lower the shaft 217 and the substrate mounting table 212, the wafer 200 placed on the substrate placing surface 211 can be raised and lowered. In addition, the periphery of the lower end portion of the shaft 217 is covered with a bellows 219, and the inside of the processing container 202 is kept airtight.

When the wafer 200 is transferred, the substrate mounting table 212 is lowered to a position where the substrate mounting surface 211 faces the substrate loading / unloading port 206 (wafer transfer position). When the wafer 200 is processed, as shown in FIG. Ascent 200 moves up to a processing position (wafer processing position) in the processing space 201.
Specifically, when the substrate mounting table 212 is lowered to the wafer transfer position, the upper end portion of the lift pins 207 protrudes from the upper surface of the substrate mounting surface 211, and the lift pins 207 support the wafer 200 from below. Yes. When the substrate mounting table 212 is raised to the wafer processing position, the lift pins 207 are buried from the upper surface of the substrate mounting surface 211 so that the substrate mounting surface 211 supports the wafer 200 from below. In addition, since the lift pins 207 are in direct contact with the wafer 200, it is desirable to form the lift pins 207 from a material such as quartz or alumina.

(shower head)
A shower head 230 as a gas dispersion mechanism is provided in the upper portion of the processing space 201 (upstream side in the gas supply direction). A gas inlet 241 is provided in the lid 231 of the shower head 230, and a gas supply system to be described later is connected to the gas inlet 241. The gas introduced from the gas inlet 241 is supplied to the buffer space 232 of the shower head 230.

  The lid 231 of the shower head 230 is formed of a conductive metal and is used as an electrode for generating plasma in the buffer space 232 or the processing space 201. An insulating block 233 is provided between the lid 231 and the upper container 202a to insulate between the lid 231 and the upper container 202a.

  The shower head 230 includes a dispersion plate 234 for dispersing the gas supplied from the gas supply system via the gas inlet 241. The upstream side of the dispersion plate 234 is a buffer space 232, and the downstream side is a processing space 201. The dispersion plate 234 is provided with a plurality of through holes 234a. The dispersion plate 234 is disposed so as to face the substrate placement surface 211.

  The buffer space 232 is provided with a gas guide 235 that forms a flow of the supplied gas. The gas guide 235 has a conical shape in which the diameter increases with the gas inlet port 241 at the top in the direction of the dispersion plate 234. The gas guide 235 is formed such that the lower end thereof is positioned further on the outer peripheral side than the through hole 234a formed on the outermost peripheral side of the dispersion plate 234.

(Plasma generator)
A matching unit 251 and a high frequency power source 252 are connected to the lid 231 of the shower head 230. Then, the plasma is generated in the shower head 230 and the processing space 201 by adjusting the impedance by the high-frequency power source 252 and the matching unit 251.

(Gas supply system)
A common gas supply pipe 242 is connected to the gas introduction hole 241 provided in the lid 231 of the shower head 230. The common gas supply pipe 242 communicates with the buffer space 232 in the shower head 230 by connection to the gas introduction hole 241. The common gas supply pipe 242 is connected to a first gas supply pipe 243a, a second gas supply pipe 244a, and a third gas supply pipe 245a. The second gas supply pipe 244a is connected to the common gas supply pipe 242 via a remote plasma unit (RPU) 244e.

  Among these, the source gas is mainly supplied from the source gas supply system 243 including the first gas supply pipe 243a, and the reaction gas is mainly supplied from the reaction gas supply system 244 including the second gas supply pipe 244a. . From the purge gas supply system 245 including the third gas supply pipe 245a, an inert gas is mainly supplied when the wafer 200 is processed, and a cleaning gas is mainly supplied when the shower head 230 and the processing space 201 are cleaned. Is done. Regarding the gas supplied from the gas supply system, the source gas is the first gas, the reactive gas is the second gas, the inert gas is the third gas, and the cleaning gas (for the processing space 201) is the fourth gas. Sometimes called gas.

(Raw gas supply system)
The first gas supply pipe 243a is provided with a raw material gas supply source 243b, a mass flow controller (MFC) 243c which is a flow rate controller (flow rate control unit), and a valve 243d which is an on-off valve in order from the upstream direction. The source gas is supplied from the first gas supply pipe 243a into the shower head 230 via the MFC 243c, the valve 243d, and the common gas supply pipe 242.

The source gas is one of the processing gases, for example, SiCl ₆ (Disilicon hexachloride or Hexachlorodisilane) gas (ie, SiCl ₆ gas) which is a source containing Si (silicon) element. The source gas may be any of solid, liquid, and gas at normal temperature and pressure. When the source gas is liquid at normal temperature and pressure, a vaporizer (not shown) may be provided between the first gas supply source 243b and the mass flow controller 243c. Here, it will be described as gas.

  A source gas supply system 243 is mainly configured by the first gas supply pipe 243a, the MFC 243c, and the valve 243d. The source gas supply system 243 may be considered to include a source gas supply source 243b and a first inert gas supply system described later. The source gas supply system 243 supplies a source gas that is one of the processing gases, and thus corresponds to one of the processing gas supply systems.

  The downstream end of the first inert gas supply pipe 246a is connected to the downstream side of the valve 243d of the first gas supply pipe 243a. The first inert gas supply pipe 246a is provided with an inert gas supply source 246b, a mass flow controller (MFC) 246c, which is a flow rate controller (flow rate control unit), and a valve 246d, which is an on-off valve, in order from the upstream direction. ing. Then, the inert gas is supplied from the first inert gas supply pipe 246a into the shower head 230 via the MFC 246c, the valve 246d, and the first gas supply pipe 243a.

The inert gas acts as a carrier gas for the raw material gas, and it is preferable to use a gas that does not react with the raw material. Specifically, for example, nitrogen (N ₂ ) gas can be used. In addition to N ₂ gas, for example, a rare gas such as helium (He) gas, neon (Ne) gas, or argon (Ar) gas can be used.

  A first inert gas supply system is mainly configured by the first inert gas supply pipe 246a, the MFC 246c, and the valve 246d. Note that the first inert gas supply system may include the inert gas supply source 236b and the first gas supply pipe 243a. The first inert gas supply system may be included in the source gas supply system 243.

(Reactive gas supply system)
The second gas supply pipe 244a is provided with an RPU 244e downstream. In the upstream, a reactive gas supply source 244b, a mass flow controller (MFC) 244c, which is a flow rate controller (flow rate control unit), and a valve 244d, which is an on-off valve, are provided in this order from the upstream direction. Then, the reactive gas is supplied from the second gas supply pipe 244a into the shower head 230 via the MFC 244c, the valve 244d, the RPU 244e, and the common gas supply pipe 242. The reactive gas is brought into a plasma state by the remote plasma unit 244e and irradiated onto the wafer 200.

The reaction gas is one of the processing gases, and for example, ammonia (NH ₃ ) gas is used.

  A reactive gas supply system 244 is mainly configured by the second gas supply pipe 244a, the MFC 244c, and the valve 244d. Note that the reactive gas supply system 244 may include a reactive gas supply source 244b, an RPU 244e, and a second inert gas supply system described later. The reactive gas supply system 244 supplies a reactive gas that is one of the processing gases, and therefore corresponds to the other of the processing gas supply system.

  A downstream end of the second inert gas supply pipe 247a is connected to the downstream side of the valve 244d of the second gas supply pipe 244a. The second inert gas supply pipe 247a is provided with an inert gas supply source 247b, a mass flow controller (MFC) 247c, which is a flow rate controller (flow rate control unit), and a valve 247d, which is an on-off valve, in order from the upstream direction. ing. Then, the inert gas is supplied from the second inert gas supply pipe 247a into the shower head 230 via the MFC 247c, the valve 247d, the second gas supply pipe 244a, and the RPU 244e.

The inert gas acts as a carrier gas or diluent gas for the reaction gas. Specifically, for example, nitrogen (N ₂ ) gas can be used. In addition to N ₂ gas, for example, a rare gas such as helium (He) gas, neon (Ne) gas, or argon (Ar) gas may be used.

  A second inert gas supply system is mainly configured by the second inert gas supply pipe 247a, the MFC 247c, and the valve 247d. Note that the second inert gas supply system may include the inert gas supply source 247b, the second gas supply pipe 243a, and the RPU 244e. The second inert gas supply system may be included in the reaction gas supply system 244.

(Purge gas supply system)
The third gas supply pipe 245a is provided with a purge gas supply source 245b, a mass flow controller (MFC) 245c, which is a flow rate controller (flow rate control unit), and a valve 245d, which is an on-off valve, in order from the upstream direction. In the substrate processing step, an inert gas as a purge gas is supplied from the third gas supply pipe 245a into the shower head 230 through the MFC 245c, the valve 245d, and the common gas supply pipe 242. In the processing space cleaning process, an inert gas as a cleaning gas carrier gas or a dilution gas is supplied into the shower head 230 via the MFC 245c, the valve 245d, and the common gas supply pipe 242 as necessary. .

The inert gas supplied from the purge gas supply source 245b acts as a purge gas for purging the gas remaining in the processing container 202 and the shower head 230 in the substrate processing step. In the process space cleaning step, it may act as a carrier gas or a dilution gas for the cleaning gas. Specifically, for example, nitrogen (N ₂ ) gas can be used as the inert gas. In addition to N ₂ gas, for example, a rare gas such as helium (He) gas, neon (Ne) gas, or argon (Ar) gas may be used.

  A purge gas supply system 245 is mainly configured by the third gas supply pipe 245a, the MFC 245c, and the valve 245d. The purge gas supply system 245 may be considered to include a purge gas supply source 245b and a processing space cleaning gas supply system described later.

(Processing space cleaning gas supply system)
A downstream end of the processing space cleaning gas supply pipe 248a is connected to the downstream side of the valve 245d of the third gas supply pipe 245a. The processing space cleaning gas supply pipe 248a is provided with a processing space cleaning gas supply source 248b, a mass flow controller (MFC) 248c that is a flow rate controller (flow rate control unit), and a valve 248d that is an on-off valve in order from the upstream direction. ing. In the process space cleaning step, the third gas supply pipe 245a is supplied with cleaning gas into the shower head 230 via the MFC 248c, the valve 248d, and the common gas supply pipe 242.

The cleaning gas supplied from the processing space cleaning gas supply source 248b acts as a cleaning gas for removing by-products and the like attached to the shower head 230 and the processing container 202 in the processing space cleaning process. Specifically, for example, nitrogen trifluoride (NF ₃ ) gas may be used as the cleaning gas. Further, for example, hydrogen fluoride (HF) gas, chlorine trifluoride gas (ClF ₃ ) gas, fluorine (F ₂ ) gas, or the like may be used, or a combination thereof may be used.

  A processing space cleaning gas supply system is mainly configured by the processing space cleaning gas supply pipe 248a, the MFC 248c, and the valve 248d. The processing space cleaning gas supply system may include the processing space cleaning gas supply source 248b and the third gas supply pipe 245a. Further, the processing space cleaning gas supply system may be included in the purge gas supply system 245.

(Gas exhaust system)
An exhaust system that exhausts the atmosphere of the processing container 202 includes a plurality of exhaust pipes connected to the processing container 202. Specifically, the first exhaust pipe 263 connected to the transfer space 203 of the lower container 202b, the second exhaust pipe 222 connected to the exhaust buffer chamber 209 of the upper container 202a, and the buffer space 232 of the shower head 230 are provided. A third exhaust pipe 236 connected thereto. The second exhaust pipe 222 is provided with a heater 225 as a third heating unit and a thermocouple 226 as a temperature detection unit that detects the temperature of the second exhaust pipe 222. The heater 225 is controlled to a temperature at which the gas flowing through the second exhaust pipe 222 does not adhere to the wall.

(First gas exhaust system)
The first exhaust pipe 263 is connected to the side surface of the transfer space 203. The first exhaust pipe 263 is provided with a turbo molecular pump (TMP) 265 as a vacuum pump that realizes a high vacuum or an ultra-high vacuum. In the first exhaust pipe 263, a valve 266 serving as a first exhaust valve for transfer space is provided upstream of the TMP 265. Further, a valve 267 is provided in the first exhaust pipe 263 on the downstream side of the TMP 265. The first exhaust pipe 263 may be provided with a dry pump (DP) (not shown) in addition to the TMP 265. DP functions as its auxiliary pump when TMP 265 operates. That is, the TMP 265 and the DP exhaust the atmosphere of the transfer space 203 through the first exhaust pipe. At that time, since it is difficult for the TMP 265, which is a high vacuum (or ultra-high vacuum) pump, to exhaust to atmospheric pressure alone, DP is used as an auxiliary pump for exhausting to atmospheric pressure.

  A first gas exhaust system is mainly configured by the first exhaust pipe 263 and the valves 266 and 267. Note that TMP265 and DP may be included in the first gas exhaust system.

(Second gas exhaust system)
The second exhaust pipe 222 is connected to the exhaust buffer chamber 209 via an exhaust hole 221 provided on the upper surface or side of the exhaust buffer chamber 209. The second exhaust pipe 222 is provided with an APC (Auto Pressure Controller) 223 which is a pressure controller for controlling the inside of the processing space 201 communicating with the exhaust buffer chamber 209 to a predetermined pressure. The APC 223 has a valve element (not shown) whose opening degree can be adjusted, and adjusts the conductance of the second exhaust pipe 222 in accordance with an instruction from the controller 260 described later. In the second exhaust pipe 222, a vacuum pump 224 is provided on the downstream side of the APC 223. The vacuum pump 224 exhausts the atmosphere of the exhaust buffer chamber 209 and the processing space 201 communicating with the exhaust buffer chamber 209 through the second exhaust pipe 222. In the second exhaust pipe 222, a valve (not shown) is provided on the downstream side or the upstream side of the APC 223, or both.

  A second gas exhaust system is mainly configured by the second exhaust pipe 222, the APC 223, and a valve (not shown). Note that the vacuum pump 224 may be included in the second gas exhaust system. Furthermore, the vacuum pump 224 may share the DP in the first gas exhaust system.

(Third gas exhaust system)
The third exhaust pipe 236 is connected to the upper surface or side surface of the buffer space 232. That is, the third exhaust pipe 236 is connected to the shower head 230 and thereby communicates with the buffer space 232 in the shower head 230. A valve 237 is provided in the third exhaust pipe 236. In the third exhaust pipe 236, a pressure regulator 238 is provided on the downstream side of the valve 237. Further, a vacuum pump 239 is provided in the third exhaust pipe 236 on the downstream side of the pressure regulator 238. The vacuum pump 239 exhausts the atmosphere of the buffer space 232 through the third exhaust pipe 236.

  The third gas exhaust system is mainly configured by the third exhaust pipe 236, the valve 237, and the pressure regulator 238. The vacuum pump 239 may be included in the third gas exhaust system. Furthermore, the vacuum pump 239 may share the DP in the first gas exhaust system.

A DP (Dry Pump) (not shown) is provided downstream of the first exhaust pipe 263, the second exhaust pipe 222, and the third exhaust pipe 236. DP exhausts the atmospheres of the buffer space 232, the processing space 201, and the transfer space 203 through the first exhaust pipe 263, the second exhaust pipe 222, and the third exhaust pipe 236, respectively. The DP also functions as an auxiliary pump when the TMP 265 operates. That is, it is difficult for the TMP 265, which is a high vacuum (or ultra-high vacuum) pump, to evacuate to atmospheric pressure alone, and therefore DP is used as an auxiliary pump that evacuates to atmospheric pressure. For example, an air valve is used for each valve of the exhaust system described above.

(controller)
The substrate processing apparatus 100 includes a controller 260 that controls the operation of each unit of the substrate processing apparatus 100. The controller 260 includes at least a calculation unit 261 and a storage unit 262. The controller 260 is connected to each configuration described above, calls a program or recipe from the storage unit 262 in accordance with an instruction from the host controller or the user, and controls the operation of each configuration in accordance with the contents. Specifically, the controller 260 includes a gate valve 205, an elevating mechanism 218, a heater 213, a high frequency power supply 252, a matching unit 251, MFCs 243c to 248c, valves 243d to 248d, MFC 249c, valves 249d, APC 223, TMP265, DP, and vacuum pump. The operation of 224, 239, valve 237, etc. is controlled.

  The controller 260 may be configured as a dedicated computer or a general-purpose computer. For example, an external storage device storing the above-described program (for example, magnetic tape, magnetic disk such as a flexible disk or hard disk, optical disk such as CD or DVD, magneto-optical disk such as MO, semiconductor memory such as USB memory or memory card) And installing the program in a general-purpose computer using the external storage device, the controller 260 according to this embodiment can be configured.

  The means for supplying the program to the computer is not limited to supplying the program via an external storage device. For example, the program may be supplied without using an external storage device by using communication means such as the Internet or a dedicated line. Note that the storage unit 262 and the external storage device are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as a recording medium. Note that when the term “recording medium” is used in this specification, it may include only the storage unit 262 alone, only the external storage device alone, or both.

(2) Details of Exhaust Buffer Chamber Here, the exhaust buffer chamber 209 formed in the upper container 202a of the processing container 202 will be described in detail with reference to FIGS.

  FIG. 2 is a perspective view schematically showing a specific example of the overall shape of the exhaust buffer chamber according to the present embodiment. FIG. 3 is a side sectional view schematically showing a specific example of the sectional shape of the exhaust buffer chamber 209 according to the present embodiment.

(Overall shape)
The exhaust buffer chamber 209 functions as a buffer space when the gas in the processing space 201 is discharged toward the side periphery. For this purpose, the exhaust buffer chamber 209 has a space provided so as to surround the outer periphery of the processing space 201 as shown in FIG. That is, the exhaust buffer chamber 209 has a space formed in a ring shape (annular shape) in plan view on the outer peripheral side of the processing space 201.

(Cross-sectional shape)
As shown in FIG. 3, in the space of the exhaust buffer chamber 209, a ceiling surface and both side wall surfaces of the space are formed by the upper container 202 a, and a floor surface of the space is formed by the partition plate 204. A communication hole 209c communicating with the processing space 201 is provided on the inner peripheral side of the space, and the gas supplied into the processing space 201 through the communication hole 209c is configured to flow into the space. . The gas flowing into the space is blocked by the outer peripheral side wall surface 209b constituting the space and collides with the side wall surface 209b. That is, one side wall (outer peripheral side wall) constituting the space functions as a gas flow blocking wall 209b extending in a direction blocking the flow of gas passing through the communication hole 209c. In addition, a communication hole 209 c communicating with the processing space 201 is provided on the other side wall (inner side wall) facing the gas flow blocking wall 209 b. Thus, the exhaust buffer chamber 209 includes at least a communication hole 209c that communicates with the processing space 201 on the side of the processing space 201, and a gas flow blocking wall 209b that extends in a direction that blocks the flow of gas through the communication hole 209c. , And is configured.

  Note that the space of the exhaust buffer chamber 209 is configured to extend so as to surround the outer periphery of the processing space 201. Therefore, the communication hole 209c provided in the inner peripheral side wall of the space is also provided so as to extend over the entire periphery of the side outer periphery of the processing space 201. At this time, considering that the exhaust buffer chamber 209 functions as a buffer space for gas exhaust, the size of the communication hole 209c in the side sectional height direction is the size of the space of the exhaust buffer chamber 209 in the side sectional height direction. It is preferable that the height is smaller than the height (space height).

(Exhaust system connection)
As shown in FIG. 2, the second exhaust pipe 222 of the second gas exhaust system is connected to the space of the exhaust buffer chamber 209. As a result, the gas supplied into the processing space 201 flows into the exhaust buffer chamber 209 through the communication hole 209c serving as a gas flow path between the processing space 201 and the exhaust buffer chamber 209 (see the arrow in the figure). The inflowing gas is exhausted through the second exhaust pipe 222. With such a structure, the gas in the processing space 201 can be quickly exhausted. Further, the air can be uniformly exhausted from the wafer in the outer peripheral direction. Therefore, gas can be uniformly supplied to the wafer surface, and as a result, the substrate surface can be processed uniformly.

(Buffer room heating section)
A heater 209a, which is a first heating unit, is provided along the outer periphery of the exhaust buffer chamber 209. The heater 209a is provided, for example, inside the gas blocking wall. A heater control unit 249 is connected to the heater 209a via a power supply line. The heater control unit 249 controls power supply to the heater 209a, thereby controlling the temperature of the heater 209a. The heater 209a is configured to heat at least the inner peripheral surface 209d of the gas flow blocking wall 209b where the exhaust gas is most attacked. This is because the amount of gas exhausted through the communication hole 209c is large, and there is a high possibility that gas will adhere to the inner peripheral surface 209d of the gas flow blocking wall 209b. FIG. 6 shows an example in which a heater 209 a is provided along the outer periphery of the exhaust buffer chamber 209.

More preferably, a heater is provided on the upper wall, the bottom wall, or both of the buffer chamber. In this case, the temperature may be controlled for each of the gas flow blocking wall 209b, the upper wall, and the bottom wall. By controlling the respective temperatures, heating control according to the amount of gas adhering to each wall becomes possible. For example, the upper wall and the bottom wall may be set to a temperature that is equal to or higher than the temperature at which gas self-decomposes and a film can be formed, and the temperature of the gas flow blocking wall 209b may be higher. By setting the temperature higher, a denser film having a uniform film stress can be formed. Therefore, even if a gas collides with the gas flow blocking wall gas flow 209b, physical separation can be suppressed. In the case of the upper wall and the bottom wall, since a large amount of gas does not collide, a stress that is weaker than that of the gas flow blocking wall 209b may be used, and more specifically, a sparser film than the gas flow blocking wall may be used.

Further, the temperature may be controlled so as to be able to form a film while compensating for the temperature decrease so that the film can be formed even if the temperature of the wall is lowered by the gas colliding with the gas flow blocking wall. By doing so, even if the temperature of the gas flow blocking wall is lowered by the gas colliding with the gas flow blocking wall, it can be maintained at the temperature at which the film is formed.

  The heater 209a is configured to be controllable so as to have a temperature higher than that of the heater 213 provided on the substrate mounting table 212.

(3) Substrate Processing Step Next, a step of forming a thin film on the wafer 200 using the substrate processing apparatus 100 as one step of the semiconductor device manufacturing method will be described. In the following description, the operation of each unit constituting the substrate processing apparatus 100 is controlled by the controller 260.

Here, a SiCl ₆ gas is used as a source gas (first processing gas), an NH ₃ gas is used as a reaction gas (second processing gas), and a SiN (silicon nitride) film is formed as a silicon-containing film on the wafer 200. An example in which is formed by an alternate supply method will be described.

  FIG. 4 is a flowchart showing a substrate processing process and a cleaning process according to this embodiment. FIG. 5 is a flowchart showing details of the film forming process of FIG.

(Substrate carrying-in placement / heating process: S102)
In the substrate processing apparatus 100, first, the substrate mounting table 212 is lowered to the transfer position of the wafer 200, thereby causing the lift pins 207 to pass through the through holes 214 of the substrate mounting table 212. As a result, the lift pins 207 protrude from the surface of the substrate mounting table 212 by a predetermined height. Subsequently, the gate valve 205 is opened to allow the transfer space 203 to communicate with the transfer chamber (not shown). Then, the wafer 200 is loaded into the transfer space 203 from the transfer chamber using a wafer transfer machine (not shown), and the wafer 200 is transferred onto the lift pins 207. Thereby, the wafer 200 is supported in a horizontal posture on the lift pins 207 protruding from the surface of the substrate mounting table 212.

  When the wafer 200 is loaded into the processing container 202, the wafer transfer machine is retracted out of the processing container 202, the gate valve 205 is closed, and the inside of the processing container 202 is sealed. Thereafter, by raising the substrate mounting table 212, the wafer 200 is mounted on the substrate mounting surface 211 provided on the substrate mounting table 212, and by further raising the substrate mounting table 212, the processing space 201 described above. The wafer 200 is raised to the processing position inside.

When the wafer 200 is loaded into the processing container 202, the valve in the first gas exhaust system is opened (opened) to allow communication between the transfer space 203 and the TMP 265 and between the TMP 265 and DP. To communicate. On the other hand, the valves of the exhaust system other than the valve in the first gas exhaust system are closed (closed). Thereby, the atmosphere of the transfer space 203 is exhausted by the TMP 265 and the DP, and the processing container 202 is brought into a high vacuum (ultra-high vacuum) state (for example, 10 ⁻⁵ Pa or less). In this step, the processing vessel 202 is brought into a high vacuum (ultra-high vacuum) state in the same manner as the pressure difference from the transfer chamber maintained in a high vacuum (ultra-high vacuum) state (eg, 10 ⁻⁶ Pa or less). This is to reduce the above. In this state, the gate valve 205 is opened, and the wafer 200 is loaded into the transfer space 203 from the transfer chamber. Note that TMP and DP are always operating during the steps shown in FIGS. 4 and 5 so as not to cause a delay in the processing steps accompanying the rise of their operations.

  After the wafer 200 is carried into the transfer space 203 and then moved up to the processing position in the processing space 201, the valve in the first gas exhaust system is closed. Thereby, the space between the transfer space 203 and the TMP 265 is cut off, and the exhaust of the transfer space 203 by the TMP 265 ends. On the other hand, the valve in the second gas exhaust system is opened to allow communication between the exhaust buffer chamber 209 and the APC 223 and communication between the APC 223 and the vacuum pump 224. The APC 223 controls the exhaust flow rate of the exhaust buffer chamber 209 by the vacuum pump 224 by adjusting the conductance of the second exhaust pipe 222 and maintains the processing space 201 communicating with the exhaust buffer chamber 209 at a predetermined pressure. The other exhaust system valves remain closed. Also, when closing the valve in the first gas exhaust system, the valve located on the upstream side of the TMP 265 is closed, and then the valve located on the downstream side of the TMP 265 is closed to stabilize the operation of the TMP 265. To maintain.

In this step, N ₂ gas as an inert gas may be supplied into the processing container 202 from the inert gas supply system while the processing container 202 is exhausted. That is, the N ₂ gas may be supplied into the processing container 202 by opening at least the valve 245d of the third gas supply system while exhausting the processing container 202 through the exhaust buffer chamber 209 with TMP265 or DP. . As a result, it is possible to suppress the adhesion of particles on the wafer 200.

Further, when the wafer 200 is placed on the substrate mounting table 212, power is supplied to the heater 213 embedded in the substrate mounting table 212 so that the surface of the wafer 200 is controlled to a predetermined processing temperature. The In parallel with this, electric power is supplied to the heater 209a of the exhaust buffer chamber 209, and the wall of the exhaust buffer chamber 209 is controlled to a predetermined processing temperature.
At this time, the temperature of the heater 213 is adjusted by controlling the power supply to the heater 213 based on the temperature information detected by the temperature sensor 216. Further, the temperature of the heater 209a is adjusted by controlling the power supply to the heater 209a based on the temperature information detected by the temperature sensor 250. Furthermore, the temperature of the heater 225 is adjusted by controlling the power supply to the heater 225 based on the temperature information detected by the temperature sensor 226.

  In this manner, in the substrate carrying-in / placement process (S102), the inside of the processing space 201 is controlled to be a predetermined processing pressure, and the surface temperature of the wafer 200 is controlled to be a predetermined processing temperature. Further, the temperature of the exhaust pipe 222 is controlled so as to prevent the gas from adhering.

More preferably, the temperature of the wall of the buffer chamber 209 may be controlled to be higher than that of the substrate mounting table 212. In this case, since the heater 209a heats the outer peripheral side surface of the substrate mounting table 212, heat escape from the outer peripheral side surface of the substrate mounting table 212 can be prevented.

Here, the predetermined processing temperature and processing pressure are processing temperature and processing pressure at which a SiN film can be formed by an alternate supply method in a film forming step (S104) described later. That is, the processing temperature and the processing pressure are such that the source gas supplied in the first processing gas (source gas) supply step (S202) does not self-decompose. Specifically, it is conceivable that the treatment temperature is from room temperature to 500 ° C., preferably from room temperature to 400 ° C., and the treatment pressure is from 50 to 5000 Pa. This processing temperature and processing pressure are also maintained in the film forming step (S104) described later.
Further, the temperature of the buffer chamber 209 is set to be equal to or higher than the temperature at which the source gas is self-decomposed. Specifically, the temperature is set to 400 ° C. or more and 700 ° C. or less. Further, the exhaust pipe 220 is set to 200 ° C. or more and 500 ° C. or less. In an ultra-low temperature oxide film (ULTO), the processing chamber temperature is set to 300 ° C. or lower above the room temperature, the buffer chamber is set to 100 ° C. or higher and 400 ° C. or lower, and the exhaust pipe is set at 100 ° C. or higher and 300 ° C. or lower. In TiN, TiO, AlO, AlN, HfO, and ZrO, the processing chamber is set to room temperature to 400 ° C., the buffer chamber 200 ° C. to 500 ° C., and the exhaust pipe 200 ° C. to 400 ° C.

(Film formation process: S104)
After the substrate carry-in / placement step (S102), the film formation step (S104) is performed. Hereinafter, the film forming step (S104) will be described in detail with reference to FIG. The film forming step (S104) is a cyclic process that repeats a process of alternately supplying different process gases.

(First process gas supply step: S202)
In the film formation step (S104), first, a first process gas (raw material gas) supply step (S202) is performed. When the first processing gas is a liquid source such as TiCl ₄ , the source gas is vaporized to generate (preliminarily vaporize) the source gas (ie, TiCl ₄ gas). The preliminary vaporization of the source gas may be performed in parallel with the above-described substrate carry-in / placement step (S102). This is because a predetermined time is required to stably generate the source gas.

When supplying the first processing gas, the source gas (SiCl ₆ gas) into the processing space 201 is adjusted by opening the valve 243d and adjusting the mass flow controller 243c so that the flow rate of the raw material gas becomes a predetermined flow rate. Start supplying. The supply flow rate of the source gas is, for example, 100 to 500 sccm. The source gas is dispersed by the shower head 230 and is uniformly supplied onto the wafer 200 in the processing space 201.

At this time, the valve 246d of the first inert gas supply system is opened, and the inert gas (N ₂ gas) is supplied from the first inert gas supply pipe 246a. The supply flow rate of the inert gas is, for example, 500 to 5000 sccm. Note that an inert gas may flow from the third gas supply pipe 245a of the purge gas supply system.

  Excess source gas uniformly flows from the processing space 201 into the exhaust buffer chamber 209 and flows through the second exhaust pipe 222 of the second gas exhaust system to be exhausted. Specifically, a valve in the second gas exhaust system is opened, and the APC 223 is controlled so that the pressure in the processing space 201 becomes a predetermined pressure. All the valves of the exhaust system other than the valves in the second gas exhaust system are closed.

  At this time, the processing temperature and the processing pressure in the processing space 201 are set to a processing temperature and a processing pressure at which the source gas is not self-decomposed. Therefore, gas molecules of the source gas are adsorbed on the wafer 200.

  In the exhaust buffer chamber 209, the source gas is self-decomposed and a source gas-containing film is formed on the processing chamber wall.

  After a predetermined time has elapsed after starting the supply of the source gas, the valve 243d is closed and the supply of the source gas is stopped. The supply time of the source gas and the carrier gas is, for example, 2 to 20 seconds.

(First shower head exhaust process: S204)
After the supply of the source gas is stopped, an inert gas (N ₂ gas) is supplied from the third gas supply pipe 245a, and the shower head 230 is purged. At this time, the valve of the second gas exhaust system is closed while the valve 237 of the third gas exhaust system is opened. The other gas exhaust system valves remain closed. That is, when purging the shower head 230, the space between the exhaust buffer chamber 209 and the APC 223 is shut off, the pressure control by the APC 223 is stopped, and the buffer space 232 and the vacuum pump 239 are communicated. Thereby, the source gas remaining in the shower head 230 (buffer space 232) is exhausted from the shower head 230 by the vacuum pump 239 via the third exhaust pipe 236. At this time, the valve on the downstream side of the APC 223 may be opened.

The supply flow rate of the inert gas (N ₂ gas) in the first shower head exhausting step (S204) is, for example, 1000 to 10000 sccm. The supply time of the inert gas is, for example, 2 to 10 seconds.

(First processing space exhaust process: S206)
When the purge of the shower head 230 is completed, an inert gas (N ₂ gas) is then supplied from the third gas supply pipe 245a, and the processing space 201 is purged. At this time, the valve in the second gas exhaust system is opened and controlled by the APC 223 so that the pressure in the processing space 201 becomes a predetermined pressure. On the other hand, all the valves of the gas exhaust system other than the valves in the second gas exhaust system are closed. Thereby, the raw material gas that could not be adsorbed to the wafer 200 in the first process gas supply step (S202) is processed through the second exhaust pipe 222 and the exhaust buffer chamber 209 by the vacuum pump 224 in the second gas exhaust system. It is removed from the space 201.

The supply flow rate of the inert gas (N ₂ gas) in the first processing space exhaust process (S206) is, for example, 1000 to 10000 sccm. The supply time of the inert gas is, for example, 2 to 10 seconds.

  Here, the first processing space exhausting step (S206) is performed after the first showerhead exhausting step (S204), but the order of performing these steps may be reversed. Also, these steps may be performed simultaneously.

(Second process gas supply step: S208)
When the purging of the shower head 230 and the processing space 201 is completed, a second processing gas (reactive gas) supply step (S208) is subsequently performed. In the second process gas supply step (S208), the valve 244d is opened, and the supply of the reaction gas (NH ₃ gas) into the process space 201 is started via the remote plasma unit 244e and the shower head 230. At this time, the MFC 244c is adjusted so that the flow rate of the reaction gas becomes a predetermined flow rate. The supply flow rate of the reaction gas is, for example, 1000 to 10000 sccm.

  The plasma reaction gas is dispersed by the shower head 230 and is uniformly supplied onto the wafer 200 in the processing space 201, reacts with the source gas-containing film adsorbed on the wafer 200, and forms SiN on the wafer 200. Create a film.

At this time, the valve 247d of the second inert gas supply system is opened, and an inert gas (N ₂ gas) is supplied from the second inert gas supply pipe 247a. The supply flow rate of the inert gas is, for example, 500 to 5000 sccm. Note that an inert gas may flow from the third gas supply pipe 245a of the purge gas supply system.

  Excess reaction gas and reaction by-products flow into the exhaust buffer chamber 209 from the processing space 201 and flow through the second exhaust pipe 222 of the second gas exhaust system to be exhausted. Specifically, a valve in the second gas exhaust system is opened, and the APC 223 is controlled so that the pressure in the processing space 201 becomes a predetermined pressure. All the valves of the exhaust system other than the valves in the second gas exhaust system are closed.

By the way, since the exhaust buffer chamber 209 is heated to a temperature higher than the decomposition temperature of the source gas, for example, a temperature at which the reaction gas and the source gas react, most of the excess reaction gas is attached to the wall of the exhaust buffer chamber. A dense SiN film is formed by reacting with the source gas-containing film. The formed dense film is a film having a uniform film stress and thus is difficult to peel off. Therefore, the peeled film does not flow back to the processing chamber. On the other hand, excess gas in the buffer chamber 209 is exhausted through the second exhaust pipe 222. Unlike the buffer chamber, the second exhaust pipe 222 is controlled to a temperature at which gas does not adhere, so that the second exhaust pipe 222 is exhausted without adhering to the inner wall of the second exhaust pipe 222. Further, since the buffer chamber 209 has a higher temperature than the second exhaust pipe 222, the pressure in the buffer chamber 209 is higher than the pressure in the second exhaust pipe 222 in the vicinity of the communicating exhaust hole 221. Accordingly, a gas flow from the buffer chamber 209 to the second exhaust pipe 222 is formed, and the exhaust efficiency is increased. By increasing the exhaust efficiency, the surplus gas is prevented from flowing back into the processing chamber.

  After a predetermined time has elapsed since the start of the supply of the reaction gas, the valve 244d is closed and the supply of the reaction gas is stopped. The supply time of the reaction gas and the carrier gas is, for example, 2 to 20 seconds.

(Second shower head exhaust process: S210)
After stopping the supply of the reaction gas, the second shower head exhausting step (S210) is performed to remove the reaction gas and reaction byproducts remaining in the shower head 230. Since the second shower head exhausting step (S210) may be performed in the same manner as the first shower head exhausting step (S204) already described, description thereof is omitted here.

(Second processing space exhaust process: S212)
After the purging of the shower head 230 is completed, a second processing space exhausting step (S212) is then performed to remove the reaction gas and reaction byproducts remaining in the processing space 201. Since the second process space exhausting step (S212) may be performed in the same manner as the first process space exhausting step (S206) already described, the description thereof is omitted here.

(Determination step: S214)
The first process gas supply process (S202), the first shower head exhaust process (S204), the first process space exhaust process (S206), the second process gas supply process (S208), and the second shower. The head exhaust process (S210) and the second process space exhaust process (S212) are defined as one cycle, and the controller 260 determines whether or not this cycle has been performed a predetermined number of times (n cycles) (S214). When the cycle is performed a predetermined number of times, a silicon nitride (SiN) film having a desired thickness is formed on the wafer 200.

(Processing number determination step: S106)
After the film formation step (S104) including the above steps (S202 to S214), as shown in FIG. 4, next, has the wafer 200 processed in the film formation step (S104) reached a predetermined number? It is determined whether or not (S106).

  If the predetermined number of wafers 200 processed in the film forming step (S104) has not been reached, the processed wafers 200 are subsequently taken out and processing of new wafers 200 that are waiting next is started. Then, the process proceeds to the substrate carry-in / out step (S108). Further, when the film forming step (S104) is performed on a predetermined number of wafers 200, the processed wafer 200 is taken out and the wafer 200 is not present in the processing container 202. The process proceeds to step (S110).

(Substrate carry-in / out process: S108)
In the substrate carry-in / out step (S <b> 108), the substrate mounting table 212 is lowered, and the wafer 200 is supported on the lift pins 207 that protrude from the surface of the substrate mounting table 212. As a result, the wafer 200 changes from the processing position to the transfer position. Thereafter, the gate valve 205 is opened, and the wafer 200 is carried out of the processing container 202 using a wafer transfer machine. At this time, the valve 245d is closed, and supply of the inert gas from the third gas supply system into the processing container 202 is stopped.

In the substrate carry-in / out step (S108), while the wafer 200 moves from the processing position to the transfer position, the valve in the second gas exhaust system is closed and the pressure control by the APC 223 is stopped. On the other hand, by opening the valve in the first gas exhaust system and exhausting the atmosphere of the transfer space 203 by TMP and DP, the processing vessel 202 is brought into a high vacuum (ultra high vacuum) state (for example, 10 ⁻⁵ Pa or less). The pressure difference from the transfer chamber maintained in a high vacuum (ultra-high vacuum) state (for example, 10 ⁻⁶ Pa or less) is also reduced. In this state, the gate valve 205 is opened, and the wafer 200 is unloaded from the processing container 202 to the transfer chamber.

  Thereafter, in the substrate loading / unloading step (S108), a new wafer 200 waiting next is loaded into the processing container 202 in the same procedure as in the above-described substrate loading / mounting step (S102). The wafer 200 is raised to the processing position in the processing space 201, and the processing space 201 is set to a predetermined processing temperature and processing pressure so that the next film forming step (S104) can be started. Then, a film forming process (S104) and a process number determination process (S106) are performed on a new wafer 200 in the processing space 201.

(Substrate unloading step: S110)
In the substrate carry-out step (S110), the processed wafer 200 is taken out from the processing container 202 and carried out to the transfer chamber in the same procedure as in the substrate carry-in / out step (S108) described above. However, unlike the substrate carry-in / out step (S108), in the substrate carry-out step (S110), the new wafer 200 waiting next is not carried into the process vessel 202, and the inside of the process vessel 202 is not carried out. In this state, the wafer 200 is not present.

  When the substrate unloading process (S110) is completed, the process proceeds to the cleaning process.

(4) Cleaning Process Next, a process of performing a cleaning process on the inside of the processing container 202 of the substrate processing apparatus 100 as one process of the semiconductor device manufacturing method will be described with reference to FIG.

(Cleaning process: S112)
In the substrate processing apparatus 100, every time the substrate unloading process (S110) is completed, that is, the film forming process (S104) is performed on a predetermined number of wafers 200, and then the wafer 200 does not exist in the processing container 202. The cleaning process (S112) is performed each time.

  Here, the valve 248d is opened with no substrate, and the cleaning gas is supplied to the buffer space 232, the processing space 201, and the exhaust buffer chamber 209. The supplied cleaning gas cleans the film adhering to the walls of the processing space 201 and the exhaust buffer space 232, and is then exhausted through the second exhaust pipe 222.

  In this embodiment, a dense film is attached to the wall of the exhaust buffer chamber 209. Therefore, even if the cleaning gas passes through the buffer chamber, the wall of the buffer chamber 209 is not over-etched.

  Incidentally, the deposit in the processing space 201 is a film that is less likely to be peeled off than that in the exhaust buffer chamber 209. This is because the temperature condition of the film attached to the inner wall of the exhaust buffer chamber 209 is only controlled, and the film thickness, the film density, etc. are higher than when the film is formed by controlling the pressure and temperature as in the processing chamber. It is not stable. On the other hand, the deposit in the processing space 201 is a film having a stable film thickness, film density, and the like because it adheres under the same conditions of temperature and pressure as the film formation conditions.

  For this reason, when supplying a high-energy cleaning gas that cleans deposits in the processing chamber, the inner wall of the buffer chamber may be over-etched. However, since the cleaning gas supplied to the processing chamber via the buffer chamber cleans each part in the process, the cleaning energy is gradually deactivated. Therefore, there is no overetching in the buffer chamber 209.

(Preferred embodiment of the present invention)
Hereinafter, preferred embodiments of the present invention will be additionally described.

[Appendix 1]
A processing space for processing a substrate placed on the substrate placement surface of the substrate placement table;
A gas supply system for supplying gas into the processing space from the side facing the substrate mounting surface;
An exhaust buffer chamber configured to include at least a communication hole communicating with the processing space at a side of the processing space, and a gas flow blocking wall extending in a direction to block a gas flow through the communication hole;
A substrate processing apparatus comprising: a first heating unit that heats the buffer chamber.

[Appendix 2]
The substrate processing apparatus according to claim 1, wherein an exhaust system for exhausting an atmosphere of the buffer chamber is connected to the buffer chamber.

[Appendix 3]
The buffer chamber has a space with the gas flow blocking wall as one side wall, the communication hole is formed in another side wall facing the one side wall, and the space has a lateral outer periphery of the processing space. The substrate processing apparatus according to appendix 1 or 2, wherein the substrate processing apparatus is configured to extend so as to surround it

[Appendix 4]
4. The substrate processing apparatus according to claim 1, wherein the first heating unit is provided at least on the gas flow blocking wall.

[Appendix 5]
The substrate mounting table has a second heating unit,
The substrate processing apparatus according to any one of supplementary notes 1 to 4, wherein the first heating unit and the second heating unit are controlled to be heated while a processing gas is supplied into the processing space.

[Appendix 6]
The substrate processing apparatus according to appendix 5, wherein the first heating unit is controlled to a temperature higher than that of the second heating unit.

[Appendix 7]
The substrate processing apparatus according to appendix 6, wherein the temperature of the second heating unit is a temperature at which the gas is not decomposed.

[Appendix 8]
The exhaust system has an exhaust pipe having a third heating unit, and the first heating unit is controlled to a temperature higher than that of the third heating unit while supplying the processing gas into the processing space. 8. The substrate processing apparatus according to any one of appendices 2 to 7.

[Appendix 9]
A step of placing the substrate on the substrate placement surface of the substrate placement table contained in the processing space;
While heating the exhaust buffer chamber having a communication hole communicating with the processing space on the side of the processing space and a gas flow blocking wall extending in a direction blocking the flow of gas through the communication hole. And a step of supplying a gas into the processing space from the side facing the substrate mounting surface.

[Appendix 10]
A step of placing the substrate on the substrate placement surface of the substrate placement table contained in the processing space;
While heating the exhaust buffer chamber having a communication hole communicating with the processing space on the side of the processing space and a gas flow blocking wall extending in a direction blocking the flow of gas through the communication hole. A program for executing a step of supplying a gas into the processing space from the side facing the substrate mounting surface.

[Appendix 11]
A step of placing the substrate on the substrate placement surface of the substrate placement table contained in the processing space;
While heating the exhaust buffer chamber having a communication hole communicating with the processing space on the side of the processing space and a gas flow blocking wall extending in a direction blocking the flow of gas through the communication hole. A computer-readable recording medium storing a program for executing a step of supplying a gas into the processing space from the side facing the substrate mounting surface.

DESCRIPTION OF SYMBOLS 100 ... Semiconductor manufacturing apparatus 200 ... Wafer (substrate)
201 ... Processing space 209 ... Exhaust buffer chamber 209a ... Heater 209b ... Gas flow blocking wall 209c ... Communication hole 211 ... Substrate mounting surface 222 ... Second exhaust pipe 230 ..Shower head 242 ... Common gas supply pipe 249a ... Cleaning gas supply pipe

Claims (16)

A processing space for processing a substrate placed on the substrate placement surface of the substrate placement table;
A gas supply system for supplying gas into the processing space from the side facing the substrate mounting surface;
At least on the side of the processing space, a communication hole communicating with the processing space, and extending in a direction that blocks the flow of gas through the communication hole, is provided at a position opposite to the processing space facing the communication hole. An exhaust buffer chamber having a gas flow blocking wall, an upper wall provided between the communication hole and the gas flow blocking wall, and a bottom wall provided below the upper wall ;
The gas flow blocking wall is provided on the upper wall or the bottom wall, and heats the gas flow blocking wall at a temperature higher than the predetermined temperature while heating the upper wall or the bottom wall to a predetermined temperature . A heating unit;
A substrate processing apparatus. The exhaust buffer chamber has a space with the gas flow blocking wall as one side wall, and the space extends so as to surround a lateral outer periphery of the processing space.
The substrate processing apparatus according to claim 1 . The substrate mounting table has a second heating unit,
The substrate processing apparatus according to claim 1 , wherein the first heating unit and the second heating unit are controlled to be heated while a processing gas is supplied into the processing space. The substrate processing apparatus according to claim 3, wherein the first heating unit is controlled to a temperature higher than that of the second heating unit. The substrate processing apparatus according to claim 4, wherein the temperature of the second heating unit is a temperature at which the gas is not decomposed. The substrate processing apparatus according to any one of claims 1 to 5, wherein the temperature of the first heating unit is equal to or higher than a temperature at which the gas is decomposed. The exhaust system having at least an exhaust hole and an exhaust pipe for exhausting the atmosphere of the exhaust buffer chamber through the exhaust hole is connected to the gas flow blocking wall or the upper wall. Substrate processing equipment. A third heating unit is provided in the exhaust pipe of the exhaust system, and the first heating unit is controlled to a temperature higher than that of the third heating unit while supplying the processing gas into the processing space. The substrate processing apparatus according to claim 7 . The substrate processing apparatus according to claim 1, wherein the predetermined temperature is a temperature at which the gas self-decomposes. Furthermore, it has a temperature sensor that detects the temperature in the vicinity of the first heating unit, and the first heating unit compensates for the decreased temperature when the temperature sensor detects a temperature decrease of the gas flow blocking wall. The substrate processing apparatus of Claim 1 or Claim 9 controlled. 11. The exhaust buffer chamber according to claim 1, wherein the gas flow blocking wall is provided at a position where the gas is most attacked. 11. The substrate processing apparatus as described. The first heating unit is configured to control a temperature for each of the upper wall, the bottom wall, and the gas flow blocking wall, and any one of claims 1 to 9 to 11. The substrate processing apparatus according to item. In the exhaust buffer chamber, the communication hole is formed with a size in the height direction equivalent to the size in the height direction of the processing space, and the gas flow blocking wall is provided on a side of the processing space, and the communication hole is provided. 13. The structure according to claim 1, wherein the gas is configured to extend in a direction in which a main flow of the gas in the lateral direction that has passed through is blocked and is opposed to the communication hole. 2. The substrate processing apparatus according to 1. A step of placing the substrate on the substrate placement surface of the substrate placement table disposed in the processing space;
Communication hole communicating to the processing space at the side of the processing space, and, extending in a direction blocking the flow of gas through the communication hole, that is provided in the opposite direction of the position and the communication hole and opposite to the process space A gas flow blocking wall; an upper wall provided between the communication hole and the gas flow blocking wall; a bottom wall provided below the upper wall; and the gas flow blocking wall and the upper wall or the bottom wall. Of the exhaust buffer chamber configured to include a first heating unit, the upper wall or the bottom wall is heated at a predetermined temperature, and the gas flow blocking wall is heated at a temperature higher than the predetermined temperature. And a step of supplying a gas into the processing space from the side facing the substrate mounting surface. A procedure for placing the substrate on the substrate placement surface of the substrate placement table disposed in the processing space;
Communication hole communicating to the processing space at the side of the processing space, and, extending in a direction blocking the flow of gas through the communication hole, that is provided in the opposite direction of the position and the communication hole and opposite to the process space A gas flow blocking wall; an upper wall provided between the communication hole and the gas flow blocking wall; a bottom wall provided below the upper wall; and the gas flow blocking wall and the upper wall or the bottom wall. Of the exhaust buffer chamber configured to include a first heating unit, the upper wall or the bottom wall is heated at a predetermined temperature, and the gas flow blocking wall is heated at a temperature higher than the predetermined temperature. while a program for executing the procedure for supplying gas into the processing space from the side facing the substrate mounting surface. A procedure for placing the substrate on the substrate placement surface of the substrate placement table disposed in the processing space;
Communication hole communicating to the processing space at the side of the processing space, and, extending in a direction blocking the flow of gas through the communication hole, that is provided in the opposite direction of the position and the communication hole and opposite to the process space A gas flow blocking wall; an upper wall provided between the communication hole and the gas flow blocking wall; a bottom wall provided below the upper wall; and the gas flow blocking wall and the upper wall or the bottom wall. of configured exhaust buffer chamber comprises first heating portion, said top wall or the bottom wall is heated at a predetermined temperature, heating the gas stream blocking wall at a temperature higher than the predetermined temperature while the substrate mounting surface opposite to the supplying gas into the processing space from the side steps and readable computer program to be executed is stored a recording medium.