JPH0586476A - Chemical vapor growth device - Google Patents
Chemical vapor growth deviceInfo
- Publication number
- JPH0586476A JPH0586476A JP25058591A JP25058591A JPH0586476A JP H0586476 A JPH0586476 A JP H0586476A JP 25058591 A JP25058591 A JP 25058591A JP 25058591 A JP25058591 A JP 25058591A JP H0586476 A JPH0586476 A JP H0586476A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- reaction
- exhaust
- chemical vapor
- vapor deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
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- Chemical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は反応ガスとして、たとえ
ばテトラエトキシシラン（以下、ＴＥＯＳという）など
の有機系液体材料を気化させたガスとＯ3ガスを用いる
常圧の化学気相成長装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an atmospheric pressure chemical vapor deposition apparatus using, as a reaction gas, a gas obtained by vaporizing an organic liquid material such as tetraethoxysilane (hereinafter referred to as TEOS) and O 3 gas. ..
【０００２】[0002]
【従来の技術】従来の技術として、反応ガスとしてＴＥ
ＯＳを気化させたガスとＯ3ガスを用いる枚葉、フェー
スダウン式常圧化学気相成長装置の反応室およびその動
作について説明する。2. Description of the Related Art As a conventional technique, TE is used as a reaction gas.
A single wafer using a gas in which OS is vaporized and an O 3 gas, a reaction chamber of a face-down type atmospheric pressure chemical vapor deposition apparatus, and its operation will be described.
【０００３】この種の化学気相成長装置の反応室は、た
とえば図４に示すように構成されている。図４におい
て、１は反応生成膜（図示せず）が形成される半導体ウ
エハ、２は半導体ウエハ１を載置するためのウエハステ
ージ、３は半導体ウエハ１、ウエハステージ２を加熱す
るためのヒーター、４は反応ガスＡを供給するためのガ
スヘッド、５はガスヘッド４上面に多数設けられたガス
吹出口、６は排気ガスＢを取り出すための排気口、７は
排気口６内の反応副生成物Ｃが付着した排気口壁であ
る。排気口壁７は、通常アルミ合金、ステンレン合金な
どの部材が用いられている。The reaction chamber of this type of chemical vapor deposition apparatus is constructed, for example, as shown in FIG. In FIG. 4, 1 is a semiconductor wafer on which a reaction product film (not shown) is formed, 2 is a wafer stage on which the semiconductor wafer 1 is placed, 3 is a semiconductor wafer 1 and a heater for heating the wafer stage 2. Reference numeral 4 is a gas head for supplying the reaction gas A, 5 is a plurality of gas outlets provided on the upper surface of the gas head 4, 6 is an exhaust port for taking out the exhaust gas B, and 7 is a reaction side in the exhaust port 6. It is the exhaust wall with product C attached. The exhaust port wall 7 is usually made of aluminum alloy, stainless steel alloy or the like.
【０００４】つぎに動作について説明する。前記のよう
に構成された化学気相成長装置の反応室においては、ガ
スヘッド４上面のガス吹出口５より、ＴＥＯＳガスとＯ
3ガスとＮ2ガスの混合ガスである反応ガスＡが、ウエハ
ステージ２に載置、加熱されている半導体ウエハ１に供
給され、半導体ウエハ１上に反応生成膜（図示せず）が
形成される。反応が終わったガスまたは未反応の反応ガ
スＡは、排気ガスＢとして排気口６より反応室の外へ排
気される。Next, the operation will be described. In the reaction chamber of the chemical vapor deposition apparatus configured as described above, TEOS gas and O 2 are supplied from the gas outlet 5 on the upper surface of the gas head 4.
A reaction gas A, which is a mixed gas of 3 gas and N 2 gas, is supplied to the semiconductor wafer 1 placed on the wafer stage 2 and heated, and a reaction product film (not shown) is formed on the semiconductor wafer 1. It The reaction-completed gas or unreacted reaction gas A is exhausted as exhaust gas B from the exhaust port 6 to the outside of the reaction chamber.
【０００５】[0005]
【発明が解決しようとする課題】ところが、この種の化
学気相成長装置の反応室は以上のように構成されている
ので、未反応のガスまたはある程度反応の進んだ反応ガ
スＡが排気ガスＢとして排気口６に流れ、その間にさら
に反応が進んで排気口壁７に反応副生成物Ｃとなって付
着する。また、ウエハステージ２とガスヘッド４の間で
反応ガスＡの気相反応によって生じた反応副生成物Ｃも
排気ガスＢと一緒に排気口６に流れるため、排気口壁７
に反応副生成物Ｃが付着する。However, since the reaction chamber of this type of chemical vapor deposition apparatus is constructed as described above, the unreacted gas or the reaction gas A which has advanced to some extent is exhaust gas B. As a reaction by-product C, the reaction further proceeds and adheres to the exhaust port wall 7 during the reaction. Further, since the reaction by-product C generated by the gas phase reaction of the reaction gas A between the wafer stage 2 and the gas head 4 also flows into the exhaust port 6 together with the exhaust gas B, the exhaust port wall 7
The reaction by-product C adheres to.
【０００６】このためこの種の化学気相成長装置では、
定期的に装置を止めて排気口壁７に付着している反応副
生成物Ｃを除去しなければならず、そのために作業者の
労力が費やされ、その間装置は止まっているので装置の
稼働率の低下を招いている。Therefore, in this type of chemical vapor deposition apparatus,
The reaction by-product C adhering to the exhaust wall 7 must be removed periodically to remove the reaction by-product C, and the labor of the operator is spent for that, and the device is stopped during that time, so the operation of the device is stopped. This has led to a decline in the rate.
【０００７】そこで本発明者らは、反応副生成物Ｃの付
着について研究した結果、排気口壁７の温度によって反
応副生成物Ｃの付着量や反応副生成物Ｃの形態が変化す
ることがわかった。Therefore, as a result of researching the adhesion of the reaction by-product C, the present inventors have found that the amount of the reaction by-product C and the morphology of the reaction by-product C change depending on the temperature of the exhaust wall 7. all right.
【０００８】この反応副生成物Ｃの排気口壁７への付着
の様子を図２および図３を用いて説明する。図２および
図３は図４に示される枚葉、フェースダウン式常圧化学
気相成長装置において、反応ガスとしてＴＥＯＳを気化
させたガスとＯ3ガスを用いて反応生成膜を形成したば
あいに排気口壁７に付着する反応副生成物Ｃの付着量の
変化を、横軸にそのときの排気口壁７の表面温度をとっ
て示したものである。このばあい、排気口壁７の表面温
度は、排気口壁をヒーターを設けて加熱することにより
コントロールした。How the reaction by-product C adheres to the exhaust port wall 7 will be described with reference to FIGS. 2 and 3. FIGS. 2 and 3 show the case where a reaction product film is formed by using a gas obtained by vaporizing TEOS as a reaction gas and O 3 gas in the single-wafer, face-down type atmospheric pressure chemical vapor deposition apparatus shown in FIG. The change in the amount of the reaction by-product C adhering to the exhaust port wall 7 is shown on the abscissa, with the surface temperature of the exhaust port wall 7 at that time. In this case, the surface temperature of the exhaust port wall 7 was controlled by heating the exhaust port wall with a heater.
【０００９】図２は縦軸にＳｉＯ2の微粒子による粉と
しての反応副生成物Ｃの付着量を示したもので、反応副
生成物Ｃは２００℃以下の温度では粉として付着してお
り、その付着量は２００℃に近い温度ほど減少してお
り、さらに高温になると粉の付着は見られない。これは
微粒子の熱泳動の効果によるもので、高温の物体になる
ほど粉は付着しにくい。また２００℃に近い温度で付着
した粉は膜に近い性質の粉となっている。FIG. 2 shows the amount of deposition of the reaction by-product C as powder by the fine particles of SiO 2 on the vertical axis. The reaction by-product C is deposited as powder at a temperature of 200 ° C. or lower, The adhesion amount decreases as the temperature approaches 200 ° C., and at higher temperatures, no powder adhesion is observed. This is due to the effect of thermophoresis of fine particles, and the higher the temperature of the object, the less likely it is that the powder will adhere. Further, the powder adhered at a temperature close to 200 ° C. has a property close to that of a film.
【００１０】図３は縦軸にＳｉＯ2の膜としての反応副
生成物Ｃの付着量を示したもので、反応副生成物Ｃは１
４０℃以上の温度では膜として付着しており、その量は
２８０℃までは増加し、２８０℃をピークにそれ以上の
高温では付着量は減少していく傾向にある。これはＴＥ
ＯＳガスとＯ3ガスによる成膜反応は一定以上の温度で
ないとおこらないのと、高温になっていくほどＯ3ガス
の熱による分解が進んでＯ3ガスが減少してしまうため
である。FIG. 3 shows the deposition amount of the reaction by-product C as a SiO 2 film on the vertical axis, where the reaction by-product C is 1
At a temperature of 40 ° C. or higher, the film adheres, and its amount increases up to 280 ° C., and the amount tends to decrease at a peak temperature of 280 ° C. and higher. This is TE
Deposition reaction by OS gas and O 3 gas and not occur unless a certain level of temperature is due to progressed degradation due to heat the O 3 gas as will be hot O 3 gas is reduced.
【００１１】このように、反応副生成物Ｃが排気口壁７
へ粉や膜として付着するが、低温で粉が付着したばあ
い、粉の付着量が多く排気口６が狭まり排気ガスＢが流
れにくくなり、一旦排気口壁７に付着したのちはがれ落
ちた粉がガスヘッド４上面に再付着して反応ガスＡの流
れを乱すなどして半導体ウエハ１上に形成される反応生
成膜である薄膜の膜厚を変動させることとなり、さらに
はがれ落ちた粉は半導体ウエハ１上にも再付着するの
で、これらはこの化学気相成長装置で処理される半導体
ウエハの歩留まりを低下させることになる。また高温で
膜が付着したばあいでも付着した膜の膜厚が厚くなって
くると、膜がはがれ落ちて粉のばあいと同様に半導体ウ
エハの歩留まり低下を招く。As described above, the reaction by-product C is contained in the exhaust port wall 7.
Although it adheres as a powder or a film, if the powder adheres at a low temperature, the amount of the powder adhered is large and the exhaust port 6 is narrowed so that the exhaust gas B becomes difficult to flow. Redeposit on the upper surface of the gas head 4 and disturb the flow of the reaction gas A, thereby changing the film thickness of a thin film which is a reaction product film formed on the semiconductor wafer 1. Since they are redeposited on the wafer 1, they reduce the yield of semiconductor wafers processed by this chemical vapor deposition apparatus. Further, even if the film adheres at a high temperature, if the film thickness of the adhered film becomes thick, the film peels off and the yield of the semiconductor wafer decreases as in the case of powder.
【００１２】本発明は前記のような問題点を解決するた
めになされたもので、前記化学気相成長装置において付
着した反応副生成物Ｃの除去を容易にし、排気口壁７へ
の反応副生成物Ｃの付着量を低減し、または付着した膜
状の反応副生成物Ｃをはがれにくくすることにより、製
造の稼動率を向上させた化学気相成長装置をうることを
目的とする。The present invention has been made to solve the above problems, and facilitates the removal of the reaction by-product C adhering to the chemical vapor deposition apparatus and allows the reaction by-product to the exhaust port wall 7 to be removed. An object of the present invention is to obtain a chemical vapor deposition apparatus in which the operation rate of production is improved by reducing the amount of the product C attached or by making it difficult for the attached film-like reaction by-product C to peel off.
【００１３】[0013]
【課題を解決するための手段】すなわち本発明は、反応
ガスとしてアルコラート系の有機系液体材料を気化させ
たガスとＯ3ガスを用いる常圧の化学気相成長装置であ
って、排気部表面を１４０℃以下の温度に保ち、この排
気部表面部材としてフッ素樹脂コーティングした部材を
用いたことを特徴とする化学気相成長装置（以下、化学
気相成長装置Ａという）、前記化学気相成長装置であっ
て、排気部表面部材を加熱するヒーターを設け、排気部
表面を１４０〜２００℃に保つことを特徴とする化学気
相成長装置（以下、化学気相成長装置Ｂという）および
前記化学気相成長装置であって、排気部表面部材を加熱
するヒーターを設け、排気部表面を２００℃以上に保
ち、さらに前記部材として石英ガラスを用いたことを特
徴とする前記化学気相成長装置（以下、化学気相成長装
置Ｃという）に関する。That is, the present invention is an atmospheric pressure chemical vapor deposition apparatus using a gas obtained by vaporizing an alcoholate-based organic liquid material and O 3 gas as a reaction gas. Is maintained at a temperature of 140 ° C. or lower, and a member coated with a fluororesin is used as the surface member of the exhaust portion. The chemical vapor deposition apparatus (hereinafter, referred to as chemical vapor deposition apparatus A), A chemical vapor deposition apparatus (hereinafter, referred to as chemical vapor deposition apparatus B), which is provided with a heater for heating a surface member of the exhaust portion and keeps the surface of the exhaust portion at 140 to 200 ° C., and the chemical. A chemical vapor deposition apparatus, comprising: a vapor phase growth apparatus, wherein a heater for heating an exhaust surface member is provided, the exhaust surface is maintained at 200 ° C. or higher, and quartz glass is used as the member. Growth device (hereinafter, the chemical that the vapor deposition apparatus C) on.
【００１４】[0014]
【作用】本発明の化学気相成長装置Ａでは、排気部表面
の部材にフッ素樹脂コーティングした部材を用いたの
で、排気部表面を１４０℃以下の温度に保って運転した
ばあい、排気部表面に粉として付着する反応副生成物の
除去を容易に行なうことができる。In the chemical vapor deposition apparatus A of the present invention, a member coated with a fluororesin is used as a member on the surface of the exhaust portion. Therefore, if the surface of the exhaust portion is operated at a temperature of 140 ° C. or lower, the surface of the exhaust portion is It is possible to easily remove the reaction by-product attached to the powder as powder.
【００１５】また本発明の化学気相成長装置Ｂでは、排
気部表面を加熱するヒーターを設けたので、排気部表面
を１４０〜２００℃の温度に保って運転したばあい、そ
こに反応副生成物は粉と膜の両方の形態で付着するが、
付着する反応副生成物の総量を低減することができ、反
応副生成物の除去のための装置停止までの期間を長くで
きる。Further, in the chemical vapor deposition apparatus B of the present invention, since the heater for heating the surface of the exhaust portion is provided, when the surface of the exhaust portion is operated at a temperature of 140 to 200 ° C., the reaction by-product is generated there. Things attach in both powder and film form,
The total amount of the reaction by-products attached can be reduced, and the period for stopping the apparatus for removing the reaction by-products can be lengthened.
【００１６】さらに本発明の化学気相成長装置Ｃでは、
排気部表面を加熱するヒーターを設け、排気部表面の部
材に石英ガラスを用いたので、排気部表面を２００℃以
上の温度に保って運転したばあい、排気部表面に膜とし
て付着する反応副生成物がはがれにくくなり、膜の除去
のための装置停止までの期間を長くできる。Further, in the chemical vapor deposition apparatus C of the present invention,
Since a heater for heating the surface of the exhaust part was provided and quartz glass was used for the member on the surface of the exhaust part, when operating while keeping the surface of the exhaust part at a temperature of 200 ° C or higher, reaction by-products that adhere to the exhaust part surface as a film The product is less likely to come off, and the period until the apparatus is stopped for removing the film can be extended.
【００１７】[0017]
【実施例】本発明の化学気相成長装置Ａ〜Ｃは、いずれ
も反応ガスとしてアルコラート系の有機系液体材料を気
化させたガスとＯ3ガスを用いる常圧の化学気相成長装
置である。EXAMPLES All of the chemical vapor deposition apparatuses A to C of the present invention are atmospheric pressure chemical vapor deposition apparatuses that use, as a reaction gas, a gas obtained by vaporizing an alcoholate-based organic liquid material and O 3 gas. ..
【００１８】前記アルコラート系の有機系液体材料とし
ては、たとえばＴＥＯＳ、ＴＭＯＳ（テトラメトキシシ
ラン）、ＴＯＭＣＡＴ（４−メチルシクロ−テトラシロ
キサン）などが用いられる。前記反応ガスを用いたばあ
い、目的のＳｉＯ２などからなる膜とともに反応副生成
物Ｃとして、たとえば微粒子状のＳｉＯ２などが生成す
る。As the alcoholate-based organic liquid material, for example, TEOS, TMOS (tetramethoxysilane), TOMCAT (4-methylcyclo-tetrasiloxane) or the like is used. The case of using a reaction gas, as a reaction by-product C with the membrane made of SiO 2 purposes, such as particulate SiO 2 is produced.
【００１９】つぎに、本発明の化学気相成長装置Ａにつ
いて、その一実施例として反応ガスとしてＴＥＯＳを気
化させたガスとＯ3ガスを用いる枚葉、フェースダウン
式常圧化学気相成長装置をあげ、図１を用いて説明す
る。Next, regarding the chemical vapor deposition apparatus A of the present invention, as one embodiment thereof, a single-wafer, face-down type atmospheric pressure chemical vapor deposition apparatus using a gas obtained by vaporizing TEOS as a reaction gas and O 3 gas are used. Will be described with reference to FIG.
【００２０】図１は本発明の化学気相成長装置の反応室
の構成を示す説明図であり、図からヒーター９を除いた
構成が化学気相成長装置Ａの構成に該当する。図中、１
〜６は図４に示す従来の装置と同一のため説明を省略す
る。８は排気口６の排気ガスＢに接する排気部表面部材
であり、フッ素樹脂コーティング部材が用いられてい
る。FIG. 1 is an explanatory view showing the constitution of the reaction chamber of the chemical vapor deposition apparatus of the present invention, and the constitution excluding the heater 9 corresponds to the constitution of the chemical vapor deposition apparatus A. 1 in the figure
6 are the same as the conventional device shown in FIG. Reference numeral 8 denotes an exhaust surface member which is in contact with the exhaust gas B from the exhaust port 6, and is made of a fluororesin coating member.
【００２１】フッ素樹脂コーティングは、下地の材質が
アルミ合金のばあい、たとえばタフラム処理（日電アネ
ルバ社の処理の名称）などにより行なう。フッ素樹脂コ
ーティング部材は、金属材料の表面にフッ素樹脂を被覆
加工するなどの方法によりうることができる。When the base material is an aluminum alloy, the fluororesin coating is performed by, for example, a tough lam treatment (a treatment name of Nichiden Anerva Co.). The fluororesin coating member can be obtained by a method such as coating the surface of a metal material with fluororesin.
【００２２】前記化学気相成長装置Ａによる半導体ウエ
ハ１への成膜方法については従来の装置による方法と同
一のため説明を省略する。前記のように構成された化学
気相成長装置Ａの反応室で、排気部表面部材８を１４０
℃以下の温度に保って反応生成膜を形成することにより
（加熱を行なわないばあい、通常の反応条件では排気部
表面温度は５０〜１００℃になる）排気部表面部材８に
は反応副生成物Ｃは粉としてのみ付着し、前記部材はフ
ッ素樹脂コーティングしてあるので粉の除去は容易に行
なうことができる。さらに排気部表面部材８を反応室よ
り分離できる構造にしておけばこの部材を交換するだけ
で反応副生成物Ｃの粉を除去することができる。Since the method of forming a film on the semiconductor wafer 1 by the chemical vapor deposition apparatus A is the same as the method by the conventional apparatus, the description thereof will be omitted. In the reaction chamber of the chemical vapor deposition apparatus A configured as described above, the exhaust surface member 8 is placed at 140
By forming the reaction product film at a temperature of ℃ or less (when heating is not performed, the surface temperature of the exhaust part is 50 to 100 ° C under normal reaction conditions), the reaction by-product is formed on the exhaust part surface member 8. The substance C adheres only as powder, and since the member is coated with a fluororesin, the powder can be easily removed. Further, if the exhaust surface member 8 has a structure that can be separated from the reaction chamber, the powder of the reaction by-product C can be removed only by exchanging this member.
【００２３】つぎに、同じく図１を用いて化学気相成長
装置Ｂの反応室を説明する。図中、１〜６は図４に示す
従来の化学気相成長装置と同一であり、排気部表面部材
８は従来から用いられているアルミ合金などの部材から
なり、ヒーター９が設けられている。Next, the reaction chamber of the chemical vapor deposition apparatus B will be described with reference to FIG. In the figure, 1 to 6 are the same as the conventional chemical vapor deposition apparatus shown in FIG. 4, the exhaust surface member 8 is made of a conventionally used member such as an aluminum alloy, and a heater 9 is provided. ..
【００２４】前記のように構成された化学気相成長装置
Ｂの反応室で、排気部表面部材８をヒーター９により加
熱し１４０〜２００℃の温度に保って反応生成膜を形成
することにより、排気部表面部材８に付着する反応副生
成物Ｃの量を少なくすることができ、また２００℃に近
い温度で付着した粉は膜に近い性質の粉であるためはが
れにくいので、排気部表面部材８に付着した反応副生成
物Ｃの除去のための装置停止までの期間を長くできる。
１４０〜２００℃の温度では図２および３に示すよう
に、排気部表面部材８には反応副生成物Ｃは粉と膜の両
方の形態で付着するが、付着する反応副生成物の総量は
１４０℃以下の温度で粉としてのみ付着する時の付着
量、２００℃以上の温度で膜としてのみ付着する時の付
着量より少なくなる。さらに排気部表面部材８を反応室
より分離できる構造にしておけばこの部材を交換するだ
けで反応副生成物Ｃの粉と膜を除去することができる。In the reaction chamber of the chemical vapor deposition apparatus B constructed as described above, the exhaust member surface member 8 is heated by the heater 9 and kept at a temperature of 140 to 200 ° C. to form a reaction product film. The amount of the reaction by-product C adhering to the exhaust surface member 8 can be reduced, and the powder adhering at a temperature close to 200 ° C. is a powder having a nature close to that of a film, so it is difficult to peel off. The period until the device is stopped for removing the reaction by-product C adhering to 8 can be lengthened.
As shown in FIGS. 2 and 3, at a temperature of 140 to 200 ° C., the reaction by-product C adheres to the exhaust surface member 8 in the form of both powder and film, but the total amount of the reaction by-product adhered is It becomes smaller than the amount of adhesion when it adheres only as a powder at a temperature of 140 ° C. or lower and the amount of adhesion when it adheres only as a film at a temperature of 200 ° C. or higher. Further, if the exhaust surface member 8 is structured so as to be separated from the reaction chamber, the powder and film of the reaction by-product C can be removed only by exchanging this member.
【００２５】さらに、図１を用いて化学気相成長装置Ｃ
の反応室を説明する。図中、１〜６は図４に示す従来の
化学気相装置と同一であり、排気部表面部材８は石英ガ
ラスからなり、ヒーター９が設けられている。Further, referring to FIG. 1, a chemical vapor deposition apparatus C
The reaction chamber will be described. In the figure, 1 to 6 are the same as the conventional chemical vapor deposition apparatus shown in FIG. 4, the exhaust surface member 8 is made of quartz glass, and a heater 9 is provided.
【００２６】前記のように構成された化学気相成長装置
Ｃの反応室で、排気部表面部材８をヒーター９により加
熱し２００℃以上の温度に保って反応生成膜を形成する
ことにより、排気部表面部材８には反応副生成物Ｃは膜
としてのみ付着し（図２および３参照）、石英ガラスと
反応副生成物Ｃの膜はどちらもＳｉＯ2で熱膨張係数が
等しいため排気部表面部材８に付着した反応副生成物Ｃ
の膜ははがれにくく、排気部表面部材８に付着した反応
副生成物Ｃの除去のための装置停止までの期間を長くで
きる。さらに排気部表面部材８を反応室より分離できる
構造にしておけばこの部材を交換するだけで反応副生成
物Ｃの膜を除去することができる。In the reaction chamber of the chemical vapor deposition apparatus C constructed as described above, the exhaust member surface member 8 is heated by the heater 9 and kept at a temperature of 200 ° C. or higher to form a reaction product film, thereby exhausting the exhaust gas. The reaction by-product C adheres only to the surface member 8 as a film (see FIGS. 2 and 3), and both the quartz glass film and the reaction by-product C film are made of SiO 2 and have the same coefficient of thermal expansion. Reaction by-product C attached to member 8
The film is difficult to peel off, and the period for stopping the apparatus for removing the reaction by-product C adhering to the exhaust surface member 8 can be lengthened. Further, if the exhaust surface member 8 has a structure that can be separated from the reaction chamber, the film of the reaction by-product C can be removed only by exchanging this member.
【００２７】なお、ここまで本発明の化学気相成長装置
Ａ〜Ｃについて、枚葉、フェースダウン式常圧化学気相
成長装置を例にあげて説明したが、反応ガスとしてＴＥ
ＯＳなどのアルコラート系の有機系の液体材料を気化さ
せたガスとＯ3ガスを用いる常圧化学気相成長装置であ
れば他のどのような形態の常圧化学気相成長装置であっ
てもよく、また反応室の構成、形状などもとくに規定す
るものではない。Up to this point, the chemical vapor deposition apparatuses A to C of the present invention have been described by taking a single-wafer, face-down type atmospheric pressure chemical vapor deposition apparatus as an example.
Any other type of atmospheric pressure chemical vapor deposition apparatus can be used as long as it is an atmospheric pressure chemical vapor deposition apparatus using a gas obtained by vaporizing an alcoholate-based organic liquid material such as OS and O 3 gas. Well, the structure and shape of the reaction chamber are not particularly specified.
【００２８】［実施例１］フッ素樹脂コーティングして
いない部材を用いた化学気相成長装置では粉がさびり付
いて残っていたものが、化学気相成長装置Ａでは、排気
部表面部材に付着した粉を除却するばあい、粉のこびり
付がほとんどなく除却できた。[Example 1] In the chemical vapor deposition apparatus using a member not coated with a fluororesin, the powder remained rusty, but in the chemical vapor deposition apparatus A, the powder adhered to the surface member of the exhaust portion. When the powder was removed, there was almost no sticking of the powder and it could be removed.
【００２９】［実施例２］化学気相成長装置Ｂにおい
て、排気部表面部材に付着した粉を除却するのに、１４
０〜２００℃に保っていないばあいでは処理枚数１００
枚で除却しなければならなかったものが、１４０〜２０
０℃に加熱保持した場合は５００枚まで除却作業を行な
わなくてよかった。[Embodiment 2] In the chemical vapor deposition apparatus B, in order to remove the powder adhering to the exhaust surface member, 14
If the temperature is not kept at 0-200 ℃, the number of processed sheets is 100.
Items that had to be discarded in one piece were 140 to 20
When heating and holding at 0 ° C, it was not necessary to perform the removal work up to 500 sheets.
【００３０】[0030]
【発明の効果】以上のように、本発明の化学気相成長装
置Ａでは排気部表面部材にフッ素樹脂コーティングした
部材を用いたので、排気部表面を１４０℃以下の温度に
保つことにより、そこに粉として付着した反応副生成物
の除去を容易に行なうことができる。As described above, in the chemical vapor deposition apparatus A of the present invention, since the surface member of the exhaust part coated with the fluororesin is used, the surface of the exhaust part is kept at 140 ° C. or lower. It is possible to easily remove the reaction by-product attached to the powder as powder.
【００３１】また化学気相成長装置Ｂでは、排気部表面
部材を加熱するヒーターを設けたので、排気部表面を１
４０℃〜２００℃の温度に保つことにより、そこに反応
副生成物は粉と膜の両方の形態で付着するが、付着する
反応副生成物の総量を低減することができ、反応副生成
物の除去のための装置停止までの期間を長くできる。Further, in the chemical vapor deposition apparatus B, since the heater for heating the surface member of the exhaust portion is provided, the surface of the exhaust portion is set to 1
By maintaining the temperature at 40 ° C to 200 ° C, the reaction by-products are attached thereto in the form of both powder and film, but the total amount of the reaction by-products attached can be reduced, and the reaction by-products can be reduced. It is possible to lengthen the period until the device is stopped for removing.
【００３２】化学気相成長装置Ｃでは、排気部表面部材
を加熱するヒーターを設け、その表面の部材に石英ガラ
スを用いたので、排気部表面を２００℃以上の温度に保
つことにより、そこに反応副生成物は膜として付着する
が、膜がはがれにくくなり、膜の除去のための装置停止
までの期間を長くできる。In the chemical vapor deposition apparatus C, a heater for heating the surface member of the exhaust portion is provided, and quartz glass is used for the member on the surface. Therefore, by keeping the surface of the exhaust portion at a temperature of 200 ° C. or higher, Although the reaction by-product adheres as a film, the film is less likely to peel off, and the period until the apparatus is stopped for removing the film can be lengthened.
【００３３】したがって、本発明の化学気相成長装置を
使用することにより、装置の稼動率を向上させることが
できる。Therefore, by using the chemical vapor deposition apparatus of the present invention, the operating rate of the apparatus can be improved.
【図１】本発明の一実施例による化学気相成長装置の反
応室を示す説明図である。FIG. 1 is an explanatory view showing a reaction chamber of a chemical vapor deposition apparatus according to an embodiment of the present invention.
【図２】枚葉、フェースダウン式常圧化学気相成長装置
の反応室の排気口壁に付着するＳｉＯ2粉付着量と排気
口壁の温度の関係を示すグラフである。FIG. 2 is a graph showing the relationship between the amount of SiO 2 powder adhering to the exhaust port wall of the reaction chamber of the single-wafer, face-down type atmospheric pressure chemical vapor deposition apparatus and the temperature of the exhaust port wall.
【図３】枚葉、フェースダウン式常圧化学気相成長装置
の反応室の排気口壁に付着するＳｉＯ2膜付着量と排気
口壁の温度の関係を示すグラフである。FIG. 3 is a graph showing the relationship between the amount of SiO 2 film attached to the exhaust port wall of the reaction chamber of the single-wafer, face-down type atmospheric pressure chemical vapor deposition apparatus and the temperature of the exhaust port wall.
【図４】従来の化学気相成長装置の反応室を示す説明図
である。FIG. 4 is an explanatory view showing a reaction chamber of a conventional chemical vapor deposition apparatus.
８ 排気部表面部材 ９ ヒーター Ａ 反応ガス 8 Exhaust surface member 9 Heater A Reaction gas
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成３年１２月６日[Submission date] December 6, 1991
【手続補正１】[Procedure Amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】０００３[Name of item to be corrected] 0003
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【０００３】この種の化学気相成長装置の反応室は、た
とえば図４に示すように構成されている。図４におい
て、１は反応生成膜（図示せず）が形成される半導体ウ
エハ、２は半導体ウエハ１を載置するためのウエハステ
ージ、３は半導体ウエハ１、ウエハステージ２を加熱す
るためのヒーター、４は反応ガスＡを供給するためのガ
スヘッド、５はガスヘッド４上面に多数設けられたガス
吹出口、６は排気ガスＢを取り出すための排気口、７は
排気口６内の反応副生成物Ｃが付着した排気口壁であ
る。排気口壁７は、通常アルミ合金、ステンレス合金な
どの部材が用いられている。The reaction chamber of this type of chemical vapor deposition apparatus is constructed, for example, as shown in FIG. In FIG. 4, 1 is a semiconductor wafer on which a reaction product film (not shown) is formed, 2 is a wafer stage on which the semiconductor wafer 1 is placed, 3 is a semiconductor wafer 1 and a heater for heating the wafer stage 2. Reference numeral 4 is a gas head for supplying the reaction gas A, 5 is a plurality of gas outlets provided on the upper surface of the gas head 4, 6 is an exhaust port for taking out the exhaust gas B, and 7 is a reaction side in the exhaust port 6. It is the exhaust wall with product C attached. Outlet wall 7, usually aluminum alloy, the members such as stainless alloys have been used.
Claims (3)
液体材料を気化させたガスとＯ3ガスを用いる常圧の化
学気相成長装置であって、排気部表面を１４０℃以下の
温度に保ち、この排気部表面部材としてフッ素樹脂コー
ティングした部材を用いたことを特徴とする化学気相成
長装置。1. An atmospheric pressure chemical vapor deposition apparatus using a gas obtained by vaporizing an alcoholate-based organic liquid material and O 3 gas as a reaction gas, wherein the exhaust surface is kept at a temperature of 140 ° C. or lower, A chemical vapor deposition apparatus characterized in that a member coated with a fluororesin is used as the surface member of the exhaust portion.
液体材料を気化させたガスとＯ3ガスを用いる常圧の化
学気相成長装置であって、排気部表面部材を加熱するヒ
ーターを設け、排気部表面を１４０℃〜２００℃に保つ
ことを特徴とする化学気相成長装置。2. An atmospheric pressure chemical vapor deposition apparatus using a gas obtained by vaporizing an alcoholate-based organic liquid material and O 3 gas as a reaction gas, wherein a heater for heating a surface member of an exhaust portion is provided, and exhaust gas is provided. A chemical vapor deposition apparatus characterized in that the surface of the part is kept at 140 ° C to 200 ° C.
液体材料を気化させたガスとＯ3ガスを用いる常圧の化
学気相成長装置であって、排気部表面部材を加熱するヒ
ーターを設け、排気部表面を２００℃以上に保ち、さら
に前記部材として石英ガラスを用いたことを特徴とする
化学気相成長装置。3. An atmospheric pressure chemical vapor deposition apparatus using a gas obtained by vaporizing an alcoholate-based organic liquid material and O 3 gas as a reaction gas, wherein a heater for heating a surface member of an exhaust part is provided and exhausted. A chemical vapor deposition apparatus characterized in that the surface of the part is kept at 200 ° C. or higher and quartz glass is used as the member.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3250585A JP2991830B2 (en) | 1991-09-30 | 1991-09-30 | Chemical vapor deposition apparatus and chemical vapor deposition method using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3250585A JP2991830B2 (en) | 1991-09-30 | 1991-09-30 | Chemical vapor deposition apparatus and chemical vapor deposition method using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0586476A true JPH0586476A (en) | 1993-04-06 |
| JP2991830B2 JP2991830B2 (en) | 1999-12-20 |
Family
ID=17210080
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3250585A Expired - Lifetime JP2991830B2 (en) | 1991-09-30 | 1991-09-30 | Chemical vapor deposition apparatus and chemical vapor deposition method using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2991830B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000012463A (en) * | 1998-06-17 | 2000-01-14 | Mitsubishi Electric Corp | Film formation device |
| JP2000216100A (en) * | 1999-01-25 | 2000-08-04 | Sony Corp | Apparatus and method for forming film |
| JP2001522138A (en) * | 1997-11-03 | 2001-11-13 | エーエスエム アメリカ インコーポレイテッド | Long life high temperature process chamber |
| JP2002222807A (en) * | 2001-01-29 | 2002-08-09 | Tokyo Electron Ltd | Heat treatment device |
| JP2004111834A (en) * | 2002-09-20 | 2004-04-08 | Tokyo Electron Ltd | Evacuation system and switching type trap device |
| JP5800969B1 (en) * | 2014-08-27 | 2015-10-28 | 株式会社日立国際電気 | Substrate processing apparatus, semiconductor device manufacturing method, program, and recording medium |
| JP2018186236A (en) * | 2017-04-27 | 2018-11-22 | 東京エレクトロン株式会社 | Substrate processing apparatus, exhaust pipe coating method, and substrate processing method |
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|---|---|---|---|---|
| JPS5889821A (en) * | 1981-11-24 | 1983-05-28 | Canon Inc | Manufacturing device of deposited film |
| JPH01294868A (en) * | 1988-01-30 | 1989-11-28 | Nec Corp | Vapor growth apparatus |
-
1991
- 1991-09-30 JP JP3250585A patent/JP2991830B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5889821A (en) * | 1981-11-24 | 1983-05-28 | Canon Inc | Manufacturing device of deposited film |
| JPH01294868A (en) * | 1988-01-30 | 1989-11-28 | Nec Corp | Vapor growth apparatus |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001522138A (en) * | 1997-11-03 | 2001-11-13 | エーエスエム アメリカ インコーポレイテッド | Long life high temperature process chamber |
| JP2000012463A (en) * | 1998-06-17 | 2000-01-14 | Mitsubishi Electric Corp | Film formation device |
| JP2000216100A (en) * | 1999-01-25 | 2000-08-04 | Sony Corp | Apparatus and method for forming film |
| JP2002222807A (en) * | 2001-01-29 | 2002-08-09 | Tokyo Electron Ltd | Heat treatment device |
| JP4640891B2 (en) * | 2001-01-29 | 2011-03-02 | 東京エレクトロン株式会社 | Heat treatment equipment |
| JP2004111834A (en) * | 2002-09-20 | 2004-04-08 | Tokyo Electron Ltd | Evacuation system and switching type trap device |
| JP5800969B1 (en) * | 2014-08-27 | 2015-10-28 | 株式会社日立国際電気 | Substrate processing apparatus, semiconductor device manufacturing method, program, and recording medium |
| KR20160028335A (en) * | 2014-08-27 | 2016-03-11 | 가부시키가이샤 히다치 고쿠사이 덴키 | Substrate processing apparatus, method of manufacturing semiconductor device, and non-transitory computer-readable recording medium |
| JP2016048705A (en) * | 2014-08-27 | 2016-04-07 | 株式会社日立国際電気 | Substrate processing apparatus, semiconductor device manufacturing method, program and recording medium |
| US9732421B2 (en) | 2014-08-27 | 2017-08-15 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus |
| JP2018186236A (en) * | 2017-04-27 | 2018-11-22 | 東京エレクトロン株式会社 | Substrate processing apparatus, exhaust pipe coating method, and substrate processing method |
| US10876204B2 (en) | 2017-04-27 | 2020-12-29 | Tokyo Electron Limited | Substrate processing apparatus, exhaust pipe coating method and substrate processing method |
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|---|---|
| JP2991830B2 (en) | 1999-12-20 |
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