JP2991830B2 - Chemical vapor deposition apparatus and chemical vapor deposition method using the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

As the present invention the reactive gas BACKGROUND OF THE, for example, tetraethoxysilane (hereinafter referred to as TEOS) atmospheric pressure chemical vapor deposition apparatus and using an organic gas and O ₃ gas and the liquid material is vaporized, such as Reaction product film using it
The present invention relates to a chemical vapor deposition method for forming .

[0002]

2. Description of the Related Art As a conventional technique, TE gas is used as a reaction gas.
A single-wafer, face-down type reaction chamber of an atmospheric pressure chemical vapor deposition apparatus using an O ₃ gas and a gas obtained by evaporating the OS and its operation will be described.

The reaction chamber of this type of chemical vapor deposition apparatus is configured, for example, as shown in FIG. 4, reference numeral 1 denotes a semiconductor wafer on which a reaction product film (not shown) is formed, 2 denotes a wafer stage for mounting the semiconductor wafer 1, and 3 denotes a heater for heating the semiconductor wafer 1 and the wafer stage 2. Reference numeral 4 denotes a gas head for supplying the reaction gas A, 5 denotes a number of gas outlets provided on the upper surface of the gas head 4, 6 denotes an exhaust port for taking out the exhaust gas B, and 7 denotes a reaction auxiliary in the exhaust port 6. This is the exhaust port wall to which the product C has adhered. Outlet wall 7, usually aluminum alloy, the members such as stainless alloys have been used.

Next, the operation will be described. In the reaction chamber of the chemical vapor deposition apparatus configured as described above, TEOS gas and O
Reaction gas A, which is a mixed gas of ₃ gases and N ₂ gas, is supplied to heated semiconductor wafer 1 placed on wafer stage 2 and a reaction product film (not shown) is formed on semiconductor wafer 1. You. The reacted gas or the unreacted reaction gas A is exhausted from the exhaust port 6 to the outside of the reaction chamber as the exhaust gas B.

[0005]

However, since the reaction chamber of this type of chemical vapor deposition apparatus is constructed as described above, the unreacted gas or the reaction gas A which has been reacted to some extent becomes the exhaust gas B. Flows through the exhaust port 6, during which the reaction further proceeds and adheres to the exhaust port wall 7 as a reaction by-product C. Further, a reaction by-product C generated by a gas phase reaction of the reaction gas A between the wafer stage 2 and the gas head 4 also flows to the exhaust port 6 together with the exhaust gas B.
The reaction by-product C adheres to.

For this reason, in this type of chemical vapor deposition apparatus,
The apparatus must be stopped periodically to remove the reaction by-products C adhering to the exhaust port wall 7, which requires labor of an operator. During this time, the apparatus is stopped. The rate has been reduced. The present inventors have studied the adhesion of the reaction by-product C, and as a result, found that the amount of the reaction by-product C and the reaction by-product
Was found to change the form.

The manner in which the reaction by-product C adheres to the exhaust port wall 7 will be described with reference to FIGS. FIGS. 2 and 3 show the case where a reaction product film is formed using a gas obtained by vaporizing TEOS and O ₃ gas as a reaction gas in the single-wafer, face-down type atmospheric pressure chemical vapor deposition apparatus shown in FIG. The horizontal axis shows the change in the amount of the reaction by-product C adhering to the exhaust port wall 7, and the surface temperature of the exhaust port wall 7 at that time is shown on the horizontal axis. In this case, the surface temperature of the exhaust port wall 7 was controlled by heating the exhaust port wall with a heater.

FIG. 2 shows the amount of reaction by-product C as a powder due to fine particles of SiO _{2 on} the vertical axis. The reaction by-product C adheres as a powder at a temperature of 200 ° C. or less. The amount of adhesion decreases as the temperature approaches 200 ° C., and at higher temperatures, no adhesion of powder is observed. This is due to the effect of the thermophoresis of the fine particles. The powder attached at a temperature close to 200 ° C. is a powder having properties close to a film.

FIG. 3 shows the amount of reaction by-product C deposited as a SiO ₂ film on the vertical axis.
At a temperature of 40 ° C. or higher, it adheres as a film, and its amount increases up to 280 ° C., and tends to decrease at a high temperature higher than 280 ° C. This is TE
Deposition reaction by OS gas and O ₃ gas and not occur unless a certain level of temperature is due to progressed degradation due to heat the O ₃ gas as will be hot O ₃ gas is reduced.

As described above, the reaction by-product C is formed on the exhaust port wall 7.
Although the powder adheres as dust or a film, if the powder adheres at a low temperature, the amount of the adhered powder is large, the exhaust port 6 is narrowed, and the exhaust gas B becomes difficult to flow. Is reattached to the upper surface of the gas head 4 and disturbs the flow of the reaction gas A, thereby changing the thickness of a thin film which is a reaction product film formed on the semiconductor wafer 1. Since they re-deposit on the wafer 1, they reduce the yield of semiconductor wafers processed by this chemical vapor deposition apparatus. Further, even when the film is attached at a high temperature, if the thickness of the attached film becomes thicker, the film peels off and causes a decrease in the yield of the semiconductor wafer as in the case of the powder.

The present invention has been made in order to solve the above-mentioned problems. The present invention facilitates the removal of the reaction by-product C adhered in the chemical vapor deposition apparatus, and reduces the reaction by-product to the exhaust port wall 7. It is an object of the present invention to provide a chemical vapor deposition apparatus in which the operation rate of production is improved by reducing the amount of the product C adhered or making the adhered film-like reaction by-product C difficult to peel off.

[0012]

SUMMARY OF THE INVENTION That is, the present invention is a normal pressure chemical vapor deposition apparatus using an organic liquid material alcoholate system vaporized as the reaction gas gas and the O ₃ gas, an exhaust section surface Can be kept at 140-200 ° C
Heater provided for heating the exhaust portion surface member so that
And the exhaust surface member separates from the reaction chamber and
Chemical vapor deposition apparatus (hereinafter, characterized in that could be conversion,
(Claim 1) In the chemical vapor deposition apparatus, the surface of the exhaust unit is maintained at 200 ° C. or higher.
Heater that heats the exhaust surface member so that it can
Is provided , and quartz glass is used as the member, and the exhaust part surface member is separated from the reaction chamber.
Apart, the chemical vapor deposition apparatus characterized by be exchanged (hereinafter, referred to as chemical vapor deposition apparatus B) (claim
2) A semiconductor using the chemical vapor deposition apparatus according to claim 1
When forming a reaction product film on the wafer, the exhaust surface
By heating to 140-200 ° C with a heater.
And a chemical vapor deposition method (claim 3), and
Semiconductor wafer using the chemical vapor deposition apparatus according to claim 2.
When forming a reaction product film on the
Heating to 200 ° C or more with a heater
(Claim 4) .

[0013]

In the chemical vapor deposition apparatus A of the present invention, since the heater for heating the surface of the exhaust portion is provided, the surface of the exhaust portion is reduced by 140 mm.
When the reactor is operated at a temperature of ~ 200 ° C, reaction by-products adhere thereto in the form of both powder and film. However, the total amount of reaction by-products attached can be reduced, and reaction by-products can be reduced. The period until the device stops for removing the object can be lengthened. Ma
In addition, the structure of the exhaust part surface member can be separated from the reaction chamber.
The reaction by-product powder
And the film can be removed.

Further, in the chemical vapor deposition apparatus B of the present invention,
Since a heater for heating the surface of the exhaust unit is provided and quartz glass is used as a member on the surface of the exhaust unit, when the exhaust unit surface is operated at a temperature of 200 ° C. or more, a reaction by-product adhering to the surface of the exhaust unit as a film. The product is less likely to be peeled off, and the period for stopping the apparatus for removing the film can be extended. Also exhaust
The structure is such that the surface parts can be separated from the reaction chamber
By simply exchanging this part, powder and film of reaction by-products
Can be removed.

[0015]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Each of the chemical vapor deposition apparatuses A and B of the present invention is an ordinary pressure chemical vapor deposition apparatus using a gas obtained by vaporizing an alcoholate-based organic liquid material and O ₃ gas as reaction gases. .

As the alcoholate-based organic liquid material, for example, TEOS, TMOS (tetramethoxysilane), TOMCAT (4-methylcyclo-tetrasiloxane) and the like are used. The case of using a reaction gas, as a reaction by-product C with the membrane made of SiO ₂ purposes, such as particulate SiO ₂ is produced.

Next, as one embodiment of the chemical vapor deposition apparatus A of the present invention, a single-wafer, face-down type atmospheric pressure chemical vapor deposition apparatus using a gas obtained by vaporizing TEOS and O ₃ gas as reaction gases. This will be described with reference to FIG.

[0018] FIG. 1 is an explanatory view showing a configuration of a reaction chamber of a chemical vapor deposition apparatus of the present invention. In the figure, 1 to 6 are the same as those of the conventional apparatus shown in FIG . Exhaust portion surface member 8 is made of members such as aluminum alloy has been conventionally used, the heater 9 is provided.

In the reaction chamber of the chemical vapor deposition apparatus A constructed as described above, the exhaust member surface member 8 is heated by the heater 9 and maintained at a temperature of 140 to 200 ° C. to form a reaction product film. Since the amount of the reaction by-product C adhering to the exhaust surface member 8 can be reduced, and the powder adhering at a temperature close to 200 ° C. is a powder having properties close to a film, it is difficult to peel off. The period until the apparatus stops for removing the reaction by-product C adhered to 8 can be lengthened.
At a temperature of 140 to 200 ° C., as shown in FIGS. 2 and 3, the reaction by-product C adheres to the exhaust surface member 8 in the form of both powder and a film. At a temperature lower than 140 ° C., the amount of adhesion when only the powder is adhered is smaller than the amount when only the film is adhered at a temperature exceeding 200 ° C. Furthermore, since an exhaust surface member 8 are a structure which can be separated from the reaction chamber, it is possible to remove the reaction by-product C powder and film simply by replacing the member.

Further, describing the reaction chamber of chemical vapor deposition apparatus B with reference to FIG. In the figure, reference numerals 1 to 6 are the same as those of the conventional chemical vapor apparatus shown in FIG. 4, the exhaust unit surface member 8 is made of quartz glass, and a heater 9 is provided.

In the reaction chamber of the chemical vapor deposition apparatus B configured as described above, the exhaust member surface member 8 is heated by the heater 9 and maintained at a temperature of 200 ° C. or higher to form a reaction product film. The reaction by-product C adheres only to the surface member 8 as a film (see FIGS. 2 and 3). Since both the quartz glass and the film of the reaction by-product C are SiO ₂ and have the same thermal expansion coefficient, the surface of the exhaust part Reaction by-product C attached to member 8
Is difficult to peel off, and the period until the apparatus stops for removing the reaction by-product C adhered to the exhaust member surface member 8 can be lengthened. Furthermore, since an exhaust surface member 8 are a structure which can be separated from the reaction chamber, it is possible to remove the film of the reaction by-product C simply by replacing the member.

The chemical vapor deposition apparatuses A and B according to the present invention have been described above with reference to a single-wafer, face-down type normal pressure chemical vapor deposition apparatus.
Any other type of atmospheric pressure chemical vapor deposition apparatus using O ₃ gas and a gas obtained by vaporizing an alcoholate organic liquid material such as an OS can be used. The configuration and shape of the reaction chamber are not particularly limited.

REFERENCE EXAMPLE 1 In the chemical vapor deposition apparatus A, the powder adhering to the surface member of the exhaust unit is removed. If the temperature is not maintained at 140 to 200 ° C., the powder must be removed by 100 sheets. If the temperature was kept at 140-200 ° C, 5
It was not necessary to perform the removal work up to 00 sheets.

[0024]

As described above, in the chemical vapor deposition apparatus A and the chemical vapor deposition method using the same according to the present invention, since the heater for heating the surface member of the exhaust section is provided, the surface of the exhaust section can be made 140 to 140. By maintaining the temperature at 200 ° C., the reaction by-products adhere thereto in the form of both powder and film, but the total amount of the reaction by-products attached can be reduced, and the removal of the reaction by-products can be reduced. , The period until the device stops can be extended.
In addition, a structure is adopted in which the exhaust surface member can be separated from the reaction chamber.
Therefore, simply exchanging this part
Powder and film can be removed.

Chemical vapor deposition apparatus B and its use
In the chemical vapor deposition method , a heater for heating the surface member of the exhaust unit was provided, and quartz glass was used for the surface member.
By keeping the surface of the exhaust portion at a temperature of 200 ° C. or higher, reaction by-products adhere to the film as a film, but the film does not easily peel off, and the period until the apparatus stops for removing the film can be lengthened. Further, the exhaust member can be separated from the reaction chamber.
Because it has a structure, just by exchanging this part
Product powders and films can be removed.

Therefore, by using the chemical vapor deposition apparatus of the present invention, the operating rate of the apparatus can be improved.

[Brief description of the drawings]

FIG. 1 is an explanatory view showing a reaction chamber of a chemical vapor deposition apparatus according to one embodiment of the present invention.

FIG. 2 is a graph showing the relationship between the amount of SiO ₂ powder adhering to the exhaust port wall of the reaction chamber of the single-wafer, face-down type atmospheric pressure chemical vapor deposition apparatus and the temperature of the exhaust port wall.

FIG. 3 is a graph showing the relationship between the amount of SiO ₂ film deposited on the exhaust port wall of the reaction chamber of the single-wafer, face-down type atmospheric pressure chemical vapor deposition apparatus and the temperature of the exhaust port wall.

FIG. 4 is an explanatory view showing a reaction chamber of a conventional chemical vapor deposition apparatus.

[Explanation of symbols]

 8 Exhaust part surface member, 9 Heater, A reaction gas.

 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-1-294868 (JP, A) JP-A-58-89821 (JP, A) JP-A-59-90631 (JP, A)

Claims (4)

(57) [Claims] 1. An atmospheric pressure chemical vapor deposition apparatus using a gas obtained by evaporating an alcoholate-based organic liquid material as a reaction gas and an O ₃ gas, wherein the surface of an exhaust unit is 140 to 200.
A heater is provided to heat the exhaust surface member so that it can be maintained at ℃.
A chemical vapor deposition apparatus which can be separated from a reaction chamber and exchanged . 2. An atmospheric pressure chemical vapor deposition apparatus using a gas obtained by vaporizing an alcoholate-based organic liquid material as a reaction gas and an O ₃ gas, wherein the surface of an exhaust unit is maintained at 200 ° C. or higher.
A heater is provided for heating the exhaust unit surface member so that the exhaust unit surface member can be maintained , quartz glass is used as the member, and the exhaust unit surface member is a reaction chamber.
A chemical vapor deposition apparatus characterized in that it can be separated from and exchanged . (3) The chemical vapor deposition apparatus according to claim 1 is used.
When forming a reaction product film on a semiconductor wafer by using
Heat the surface member to 140-200 ° C with a heater
Performing a chemical vapor deposition method. (4) The chemical vapor deposition apparatus according to claim 2 is used.
When forming a reaction product film on a semiconductor wafer by using
Heat the surface member to 200 ° C or more with a heater.
A chemical vapor deposition method characterized by the following.