JPS63302523A - Plasma cvd device and film forming method - Google Patents
Plasma cvd device and film forming methodInfo
- Publication number
- JPS63302523A JPS63302523A JP13879587A JP13879587A JPS63302523A JP S63302523 A JPS63302523 A JP S63302523A JP 13879587 A JP13879587 A JP 13879587A JP 13879587 A JP13879587 A JP 13879587A JP S63302523 A JPS63302523 A JP S63302523A
- Authority
- JP
- Japan
- Prior art keywords
- silicon nitride
- gas
- film
- plasma cvd
- empty
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 5
- 239000007789 gas Substances 0.000 claims abstract description 39
- 238000000151 deposition Methods 0.000 claims abstract description 27
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 20
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000012495 reaction gas Substances 0.000 claims abstract description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 9
- 230000008021 deposition Effects 0.000 claims description 25
- 230000002159 abnormal effect Effects 0.000 abstract description 11
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 230000006866 deterioration Effects 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 24
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000010926 purge Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業−１−の利用分野］
本発明はプラズマＣＶＩ）装置に関する。史に詳細には
、本発明は窒化シリコン膜の形成において酸化シリコン
の空デポ、続いて窒化シリコンの空デポを２段階連続的
に実施することのできるプラズマＣＶＤ装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application in Industry-1-] The present invention relates to a plasma CVI) apparatus. More specifically, the present invention relates to a plasma CVD apparatus capable of successively performing two stages of empty deposition of silicon oxide and then empty deposition of silicon nitride in forming a silicon nitride film.
［従来の技術］
薄膜の形成方法として半導体二［業において・般に広く
用いられているものの−・つに化学的気相成長法（ＣＶ
Ｄ：Ｃｈｅｍｉｃａｌ Ｖａｐｏｕｒｌ）ｅｌ）ｏｓ
ｉ ｔ １ｏｎ）がある。ＣＶＤとは、ガス杖物質を
化学反応で固体物質にし、基板ｌ−に堆積することをい
う。[Prior art] One of the methods widely used in the semiconductor industry for forming thin films is chemical vapor deposition (CV).
D:Chemical Vaporl)el)os
It 1 on). CVD refers to the chemical reaction of a gaseous substance to a solid substance, which is then deposited onto a substrate l-.
ＣＶＤの特徴は、成長しようとする薄膜の一点よりかな
り低い堆積温度で種々の薄膜が得られること、および、
成長した薄膜の純庶が高＜、ＳｉやＳｉ上の熱酸化膜り
に成長した場合も電気的特性が安定であることで、広り
゛Ｉ′導体表面のパノシペーション膜として利用されて
いる。 □ＣＶ Ｉ）法は大別すると、（１）常圧
、（２）減圧および（３）プラズマの３種類がある。Characteristics of CVD are that various thin films can be obtained at deposition temperatures significantly lower than the point of the thin film to be grown, and
Because the grown thin film has a high purity and stable electrical characteristics even when grown on Si or a thermal oxide film on Si, it is widely used as a panoccupation film on the surface of a conductor. There is. □CV I) There are three types of methods: (1) normal pressure, (2) reduced pressure, and (3) plasma.
最近の超ＬＳＩ技術の急速な進歩により、′超々ＬＳＩ
”という言葉も聞かれはじめた。これに伴い、Ｓｉデバ
イスはますます高集積化、高速度化が進み、６インチか
ら８インチ、更には１２インチ大口径基板が使用される
ようになった。Due to recent rapid progress in ultra-LSI technology, 'ultra-ultra
Along with this, Si devices have become more highly integrated and faster, and large-diameter substrates from 6 inches to 8 inches and even 12 inches have come into use.
゛腔導体デバイスの高集積化が進むに伴い、高品質、高
精度な絶縁膜が求められ、常圧ＣＶＤ法では対応が困難
になってきた。そこで、プラズマ化学を利用したプラズ
マＣＶＤ法が注目を浴びている。As the degree of integration of cavity conductor devices progresses, high quality and high precision insulating films are required, and it has become difficult to meet these demands using the normal pressure CVD method. Therefore, plasma CVD method using plasma chemistry is attracting attention.
例えば、常圧ＣＶＤシリコン酸化膜（成長温度〜４５０
℃）は、ナトリウム（Ｎａ）などによる汚染に対して阻
止効果はなく、耐湿性に関しても難点がある。これに対
して、プラズマＣＶＤ窒化シリコン膜はナトリウムに対
する阻１ト、効果が高く、しかも耐湿性に優れている。For example, atmospheric pressure CVD silicon oxide film (growth temperature ~450℃
℃) has no effect on preventing contamination by sodium (Na), etc., and also has drawbacks in terms of moisture resistance. On the other hand, a plasma CVD silicon nitride film has a high blocking effect against sodium and also has excellent moisture resistance.
また、反応ガスの熱分解反応を利用したＣＶＤ窒化シリ
コン膜が７５０〜８００℃程度の高温で形成されるのに
対して、プラズマＣＶＤ窒化シリコン膜は、通に低い３
００℃前後で形成することができるので、〜１μｍ程度
の厚い膜を形成してもクラックが発生することもない。Furthermore, while CVD silicon nitride films that utilize thermal decomposition reactions of reactive gases are formed at high temperatures of around 750 to 800°C, plasma CVD silicon nitride films are formed at temperatures as low as 3°C.
Since it can be formed at around 00°C, cracks will not occur even if a thick film of about 1 μm is formed.
［発明が解決しようとする問題点コ
従来のプラズマＣＶＤ装置により窒化シリコン（Ｓｉ３
Ｎ＊）膜を形成する場合、ウェハにいきなり窒化シリコ
ン膜を形成させることはできない。[Problems to be solved by the invention] Silicon nitride (Si3
When forming a N*) film, it is not possible to suddenly form a silicon nitride film on a wafer.
反応炉内ヘウエハを搬入しない空の状態で、炉内へＳｉ
Ｈ４およびＮＨａなどの反応ガスを送入し、プラズマ放
電させて装置を安定状態にしてから、ウェハを用いた実
際の成膜処理を開始しなければならない。この操作は一
般的に「空デポ」といわれている。Si is placed inside the reactor in an empty state without any wafers being carried into the reactor.
After the reactant gases such as H4 and NHa are introduced and plasma is discharged to bring the apparatus into a stable state, the actual deposition process using the wafer must begin. This operation is commonly referred to as "empty depot."
しかし、従来の装置でプラズマ窒化シリコン（以下ｒＰ
−８ｉＮＪと略す）の空デポを打っても装置はなかなか
安定化せず、シャワー電極の部分に異常放電が発生し、
窒化シリコンの膜質が悪化したり、シャワー電極がスパ
ツクされて異物の多発を招いていた。このため、半導体
素子の製造歩留りが低ドするばかりか、製造（程全体の
スループットも低Ｆする。However, with conventional equipment, plasma silicon nitride (rP)
-8iNJ) Even after making an empty deposit, the device did not stabilize easily, and an abnormal discharge occurred at the shower electrode.
The quality of the silicon nitride film deteriorated, and the shower electrode was spattered, resulting in a large number of foreign substances. For this reason, not only the manufacturing yield of semiconductor devices is lowered, but also the throughput of the entire manufacturing process is lowered.
従って、本発明の１．１的はシャワー電極に発生する異
常放電を抑制し、Ｐ−８ｉＮの膜質悪化および異物多発
を防１１・、することのできるプラズマＣＶＤ装置を提
供することである。Therefore, 1.1 of the present invention is to provide a plasma CVD apparatus that can suppress abnormal discharge occurring in the shower electrode and prevent deterioration of P-8iN film quality and occurrence of foreign particles.
［問題点を解決するための手段］
本発明者らが長年にわたり広範な実験と研究を続けた結
果、最初にプラズマ酸化シリコン（以下ｒＰ−８ｉＯＪ
と略す）の空デポを行い、次にＰ−ＳｉＮの空デポを行
う２段階連続式にすることにより、シャワー電極に発生
する異常放電を効果的に防止できることが発見された。[Means for Solving the Problems] As a result of extensive experiments and research carried out by the present inventors over many years, we first developed plasma oxide silicon (rP-8iOJ).
It has been discovered that abnormal discharge occurring in the shower electrode can be effectively prevented by performing a two-stage continuous process in which empty deposition of P-SiN is performed first and then empty deposition of P-SiN is performed.
本発明は斯かる知見に基づき完成された。The present invention was completed based on this knowledge.
要するに、本発明のプラズマＣＶＤ装置は、最初にＰ−
８ｉＯの空デポ、次にＰ−８ｉＮの空デポといった、２
段階の空デポを連続して行うことができるガスシーケン
スおよびＰ−８ｉＯの空デポを行えるガスラインを有す
ることを特徴とするプラズマＣＶＤ装置である。In short, in the plasma CVD apparatus of the present invention, P-
8iO empty depot, then P-8iN empty depot, etc.
This plasma CVD apparatus is characterized by having a gas sequence that can perform continuous empty deposition of stages and a gas line that can perform empty deposition of P-8iO.
［作用コ
シャワー電極に発生する異常放電が抑制されるために、
Ｐ −Ｓ ｓ Ｎの膜質の悪化および異物の多発は効果
的に防１１−される。[In order to suppress the abnormal discharge that occurs in the working co-shower electrode,
Deterioration of the film quality of P-S s N and frequent occurrence of foreign substances are effectively prevented.
正確なメカニズムは未だ解明されていないので仮説の域
を出ないが、Ｐ−８ｓＯの空デポを先行させることによ
りシャワー電極の異常放電が抑制される原因は、Ｐ−８
ｉＮ膜はストレスが大きいため、付着する材質によって
は膜剥離を起こし易く、その膜剥離の部分に電界が集中
し異常放電を発生していたものと思われるが、Ｐ −Ｓ
ｓ Ｏ膜はＰ−８ｉＮ膜とシャワー電極とのストレス
を緩和し、ＰｓｔＮ膜の膜剥離を抑制するために異常放
電の発生が防＋ｈされるものと思われる。Although the exact mechanism has not yet been elucidated and remains a hypothesis, the reason why the abnormal discharge of the shower electrode is suppressed by preceding the empty deposition of P-8sO is that P-8
Since the iN film is under a lot of stress, it is likely that the film will peel off depending on the material to which it is attached, and the electric field may have concentrated in the area where the film was peeled off, causing abnormal discharge.
It is thought that the sO film alleviates the stress between the P-8iN film and the shower electrode and suppresses the peeling of the PstN film, thereby preventing the occurrence of abnormal discharge.
［実施例］
以Ｆ１図面を参照しながら本発明の実施例について史に
詳細に説明する。[Embodiments] Hereinafter, embodiments of the present invention will be described in detail with reference to the F1 drawing.
第１図は本発明のプラズマＣＶ Ｉ） ｇ置のＷ１要図
である。FIG. 1 is a schematic diagram of W1 of the plasma CV I) g position of the present invention.
第１図において、符号１はプラズマＣＶ Ｉ）装置の反
応炉を示す。反応炉の内部にはウェハを載置するための
サセプタ２が配設されている。サセプタの下部にはウェ
ハを加熱するためのヒータユニット３が設けられている
。サセプタは接地されている。反応炉の上部にはこのサ
セプタと対峙してシャワー電極４が配設されている。シ
ャワー電極は多数の微小貫通孔を有する金属製の円盤で
ある。In FIG. 1, reference numeral 1 indicates a reactor of a plasma CVI) apparatus. A susceptor 2 for placing a wafer is provided inside the reactor. A heater unit 3 for heating the wafer is provided at the bottom of the susceptor. The susceptor is grounded. A shower electrode 4 is disposed in the upper part of the reactor, facing the susceptor. The shower electrode is a metal disc with many minute through holes.
このシャワー電極は品周波発振′ａ５に接続されている
。反応炉１の下部には排気ダクト６が設けられている。This shower electrode is connected to the high frequency oscillation 'a5. An exhaust duct 6 is provided at the bottom of the reactor 1.
排気ダクトの途中には自動圧力コントローラー（ＡＰＣ
）７が設けられている。An automatic pressure controller (APC) is installed in the middle of the exhaust duct.
)7 is provided.
シャワー電極の上部には反応ガス送入パイプ１０が接続
されている。このメインパイプには空デポおよび成膜反
応処理に必要な各ガスを給送するためのサブパイプが接
続されている。モノシラン５ｉＨ７ガスはパイプ２Ｏか
ら給送され、亜酸化窒素Ｎ２Ｏはパイプ３０から給送さ
れ、アンモニアＮＨａガスはパイプ４０から給送され、
パージ用Ｎ２ガスはパイプ５０から給送される。各給送
パイプにはエアーバルブとマス７０−コントローラが設
けられている。A reaction gas supply pipe 10 is connected to the upper part of the shower electrode. This main pipe is connected to an empty deposit and sub-pipes for supplying each gas necessary for film-forming reaction processing. Monosilane 5iH7 gas is fed from pipe 2O, nitrous oxide N2O is fed from pipe 30, ammonia NHa gas is fed from pipe 40,
Purge N2 gas is supplied from a pipe 50. Each feed pipe is provided with an air valve and a mass 70-controller.
次に、本発明のプラズマＣＶ Ｉ）装置におけるガスシ
ーケンスの具体的動作について説明する。Next, the specific operation of the gas sequence in the plasma CVI) apparatus of the present invention will be explained.
エアーバルブ２２．３２および４２を閉じた状態で給送
パイプ５０のエアーバルブ５２を開いてパージ用Ｎ２ガ
スを反応炉内に送入し炉内のガス置換を行う。パージ用
Ｎ２ガスの流眼はマスフローコントローラ５４゛により
調節する。この際、排気ダクト６から炉内の残留ガスを
強制的に排気することが好ましい。With the air valves 22, 32 and 42 closed, the air valve 52 of the feed pipe 50 is opened to feed purging N2 gas into the reactor to replace the gas in the reactor. The flow rate of the purging N2 gas is adjusted by a mass flow controller 54'. At this time, it is preferable to forcibly exhaust the residual gas in the furnace from the exhaust duct 6.
次にｓ Ｐ −Ｓ ｉＯの空デポを行うために、エアー
バルブ２２および３２を開き、給送パイプ２Ｏおよび３
０からＳｉＨ４およびＮ２Ｏガスをそれぞれ炉内に送入
する。空デポに必要なガス流量および炉内圧力調整はマ
スフローコントローラ２４および３４とＡＰＣ７により
行う。Next, in order to perform empty deposition of s P -S iO, the air valves 22 and 32 are opened, and the supply pipes 2O and 3 are opened.
SiH4 and N2O gases are each introduced into the furnace from 0. The gas flow rate and furnace pressure adjustment required for the empty deposit are performed by the mass flow controllers 24 and 34 and the APC 7.
ガス流量および炉内圧力が安定したところで高周波発振
器５により高周波を印加し、Ｐ−８ｉＯの空デポを開始
する。When the gas flow rate and pressure in the furnace become stable, high frequency is applied by the high frequency oscillator 5 to start empty deposition of P-8iO.
任意の時間Ｐ−３ｉＯの空デポを行った後、高周波の印
加を停止し、Ｐ−８ｉＮの空デポを行うために、エアー
バルブ３２を閉じてＮ２Ｏの供給を１１−め、エアーバ
ルブ４２を１井１１．）てＮＨａガスを炉内に送入する
。Ｐ−８ｉＮの空デポに必要なガス流におよび炉内圧力
調整もマスフローコントローラ２４および４４とＡＰＣ
７により杼う。After performing empty deposition of P-3iO for an arbitrary period of time, stop the application of high frequency, and close the air valve 32 to start emptying the N2O supply and close the air valve 42 to perform empty deposition of P-8iN. 1 well 11. ) to feed NHa gas into the furnace. Mass flow controllers 24 and 44 and APC are used to adjust the gas flow and furnace pressure required for the P-8iN empty deposit.
Shuttle by 7.
Ｐ−８ｉＮの空デボの為のガス全潰および炉内圧力が安
定したら高周波発振器５により高周波を印加し、Ｐ−８
ｔＮの空デポを開始する。Ｐ−８ｉＯの空デポ時間およ
びＰ−３ｉＮの空デポ時間は制御系のキーボード端末を
操作することにより容易に変更できる。When the gas is completely destroyed for the empty debo of P-8iN and the pressure inside the furnace is stabilized, high frequency is applied by the high frequency oscillator 5, and the P-8
Start an empty depot of tN. The empty depot time of P-8iO and the empty depot time of P-3iN can be easily changed by operating the keyboard terminal of the control system.
空デポ終了後、全てのエアーバルブを閉じてから炉内の
真空引きを行い、炉内に残留している反応ガスを排出す
る。After the empty deposit is completed, all the air valves are closed and the furnace is evacuated to exhaust the reaction gas remaining in the furnace.
その後、エアーバルブ５２を開いてパージ用Ｎ２ガスを
炉内に送入しガス置換を行う。Thereafter, the air valve 52 is opened and purging N2 gas is introduced into the furnace to perform gas replacement.
ＳｉＨ４ガスに代えて％５ＩＦｌガスも使用できる。同
様に、Ｎ２Ｏに代えて、Ｃ０２ガスを使用できる。Ｐ−
８ｉＮの空デポにはＮＨａガスの代わりにＮ２ガスを使
用することもできる。この場合、ガス置換および空デポ
中もエアーバルブ４２を閉じる必四はない。%5IFl gas can also be used instead of SiH4 gas. Similarly, C02 gas can be used instead of N2O. P-
N2 gas can also be used instead of NHa gas for the 8iN empty deposit. In this case, it is not necessary to close the air valve 42 even during gas replacement and empty deposition.
なお、本発明の装置は、従来の装置と同様に全てマイク
ロコンピュータにより制御される。また、ここに上げた
空デポの工程は連続でも、単独でも行うことができる。Note that the apparatus of the present invention is entirely controlled by a microcomputer, similar to conventional apparatuses. Further, the empty deposition process mentioned above can be performed continuously or singly.
本発明の装置の効果を確認するため％ＰＳＩＮだけの空
デポを打った場合の経時変化と、本発明によるＰ−８ｉ
Ｏの空デポを最初に行い、次いでＰ−８ｉＮの空デポを
続けて行った場合の経時変化を測定した。Ｐ−８ｉＮの
空デポ条件は何れも同一とした。測定結果を添付の第２
図（ａ）および第２図（ｂ）に示す。図中、実線はデポ
レートを、一点鎖線は屈折率を、点線は膜厚均一性をそ
れぞれ示す。In order to confirm the effect of the device of the present invention, the change over time when an empty deposit with only %PSIN was made, and the P-8i according to the present invention.
Changes over time were measured when empty deposition of O was performed first, and then empty deposition of P-8iN was performed successively. The empty deposit conditions for P-8iN were all the same. Attach the measurement results to the second
This is shown in FIG. 2(a) and FIG. 2(b). In the figure, the solid line indicates the deposition rate, the dashed line indicates the refractive index, and the dotted line indicates the film thickness uniformity.
第２図（ａ）から明らかなように５Ｐ−８ｉＮだけの空
デポを行った場合は異常放電が多発しデポレート、膜厚
均一性および屈折率は何れも極めて不安定であり、これ
らが安定するまでにウェハ約８０枚分の処理時間が必要
である。これに対して、第２図（ｂ）に示されるように
、最初にｐ−８ｉＯの空デポを行い、次いでＰ−３ｉＮ
の空デポを続けて行った場合、異常放電は殆ど発生せず
、膜厚の均一性はほぼ一定である。デポレートおよび庇
折率が安定するのにウェハ約２Ｏ枚弱分の処理時間が必
要なだけである。この値は従来の約１７４強である。As is clear from Figure 2 (a), when empty deposition of only 5P-8iN is performed, abnormal discharge occurs frequently and the deposition rate, film thickness uniformity, and refractive index are all extremely unstable; The processing time for approximately 80 wafers is required. On the other hand, as shown in FIG. 2(b), p-8iO is emptyly deposited first, and then P-3iN is deposited.
When empty deposition is continued, almost no abnormal discharge occurs, and the uniformity of the film thickness is almost constant. It takes only a processing time of less than about 20 wafers to stabilize the deposition rate and eaves refractive index. This value is about 174 higher than the conventional value.
［発明の効果］
以上説明したように、本発明のプラズマＣＶＤ装置は、
最初にＰ−８ｉＯの空デボ、次にＰ−８ｉＮの空デポと
いった、２段階の空デポを連続して行うことができるガ
スシーケンスおよびＰ−８ｉＯの空デボを行えるガスラ
インをａするので、電極部分で異常放電が殆ど発生しな
い。その結果、Ｐ−３ｉＮの膜質悪化を防！１−でき、
異物の発生も著しく抑制される。装置は短時間内に安定
化されるので゛１ｔ−導体素子の製造工程全体のスルー
プットが同士、される。[Effects of the Invention] As explained above, the plasma CVD apparatus of the present invention has the following effects:
Since we have a gas sequence that can perform two stages of empty deposition in succession, first emptying P-8iO and then emptying P-8iN, and a gas line that can perform emptying P-8iO, Almost no abnormal discharge occurs at the electrode part. As a result, the deterioration of P-3iN film quality is prevented! 1-Can,
The generation of foreign matter is also significantly suppressed. Since the device is stabilized within a short time, the throughput of the entire manufacturing process for 1t-conductor elements is reduced.
第１図は本発明のプラズマＣＶ ｌ）装置の概要図であ
り、第２図（ａ）はＰ−３ｉＮだけの空デポの場合の経
時変化を示す特性図であり、第２図（ｂ）は最初にＰ−
８ｉＯの空デポを行い、次にＰ−８ｉＮの空デポを杼っ
た場合の経時変化を示す特性図である。
１・・・反応炉、２・・・サセプタ、３・・・ヒータユ
ニット。
４・・・シャワー電極、５・・・高周波発振器。
６・・・排気ダクト、７・・・自動圧力コントローラ。
１０・・・反応ガス送入パイプ、２Ｏ・・・ＳｉＨ４ガ
ス給送パイプ、２２．３２．４２．５２・・・エアーバ
ルブ、２４．３４，４４．５４・・・マスフローコン、
トローラ、３０・・・Ｎ２Ｏガス給送パイプ、４０・・
・ＮＨａガス給送パイプ、５０・・・パージ用Ｎ２ガス
給送パイプFIG. 1 is a schematic diagram of the plasma CV l) apparatus of the present invention, FIG. 2(a) is a characteristic diagram showing changes over time in the case of an empty deposit of only P-3iN, and FIG. 2(b) is first P-
FIG. 3 is a characteristic diagram showing changes over time when an empty deposit of 8iO is carried out and then an empty deposit of P-8iN is carried out. 1... Reactor, 2... Susceptor, 3... Heater unit. 4...Shower electrode, 5...High frequency oscillator. 6...Exhaust duct, 7...Automatic pressure controller. 10... Reaction gas feed pipe, 2O... SiH4 gas feed pipe, 22.32.42.52... Air valve, 24.34, 44.54... Mass flow controller,
Troller, 30...N2O gas supply pipe, 40...
・NHa gas supply pipe, 50...N2 gas supply pipe for purging
Claims (3)
ワー電極とを有する、窒化シリコン膜を作製するための
プラズマＣＶＤ装置において、前記シャワー電極には反
応ガス送入手段が接続されており、該反応ガス送入手段
には酸化シリコン膜の空デポ用ガス給送パイプが更に接
続されていることを特徴とするプラズマＣＶＤ装置。(1) In a plasma CVD apparatus for producing a silicon nitride film, which has a susceptor inside a reactor and a shower electrode facing the susceptor, a reaction gas feeding means is connected to the shower electrode, A plasma CVD apparatus characterized in that a gas supply pipe for empty deposition of silicon oxide film is further connected to the reaction gas supply means.
Ｎ＿２ＯまたはＣＯ＿２ガスを給送することを特徴とす
る特許請求の範囲第１項に記載のプラズマＣＶＤ装置。(2) The plasma CVD apparatus according to claim 1, wherein the gas supply pipe for empty deposition of the silicon oxide film supplies N_2O or CO_2 gas.
る方法において、反応炉内で最初に酸化シリコンの空デ
ポを行い、続いて窒化シリコンの空デポを行ってからウ
ェハの表面に窒化シリコン膜を形成させることからなる
プラズマＣＶＤ法による窒化シリコン膜形成方法。(3) In the method of forming a silicon nitride film by plasma CVD method, first empty deposition of silicon oxide is performed in a reactor, then empty deposition of silicon nitride is performed, and then a silicon nitride film is formed on the surface of the wafer. A method of forming a silicon nitride film by a plasma CVD method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13879587A JP2579166B2 (en) | 1987-06-02 | 1987-06-02 | Plasma CVD apparatus and film forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13879587A JP2579166B2 (en) | 1987-06-02 | 1987-06-02 | Plasma CVD apparatus and film forming method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63302523A true JPS63302523A (en) | 1988-12-09 |
| JP2579166B2 JP2579166B2 (en) | 1997-02-05 |
Family
ID=15230400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13879587A Expired - Lifetime JP2579166B2 (en) | 1987-06-02 | 1987-06-02 | Plasma CVD apparatus and film forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2579166B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7565880B2 (en) | 2002-12-18 | 2009-07-28 | Sharp Kabushiki Kaisha | Plasma CVD apparatus, and method for forming film and method for forming semiconductor device using the same |
-
1987
- 1987-06-02 JP JP13879587A patent/JP2579166B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7565880B2 (en) | 2002-12-18 | 2009-07-28 | Sharp Kabushiki Kaisha | Plasma CVD apparatus, and method for forming film and method for forming semiconductor device using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2579166B2 (en) | 1997-02-05 |
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