CN108149223B - MPCVD cavity structure and MPCVD equipment - Google Patents

MPCVD cavity structure and MPCVD equipment Download PDF

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Publication number
CN108149223B
CN108149223B CN201711439483.5A CN201711439483A CN108149223B CN 108149223 B CN108149223 B CN 108149223B CN 201711439483 A CN201711439483 A CN 201711439483A CN 108149223 B CN108149223 B CN 108149223B
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air
cavity
air inlet
mpcvd
communicated
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CN108149223A (en
Inventor
范杰
黄翀
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Changsha New Materials Industry Research Institute Co ltd
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Changsha New Materials Industry Research Institute Co ltd
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45576Coaxial inlets for each gas
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515

Abstract

The invention relates to an MPCVD cavity structure and MPCVD equipment, comprising a hollow body, wherein the body is provided with an air inlet pipe, the inner wall of the body is provided with a plurality of air inlets communicated with the air inlet pipe, the plurality of air inlets are at least divided into one layer, and the air inlets of the same layer are uniformly distributed at the same height position of the inner wall of the body; the body is provided with an air outlet pipe communicated with the inner cavity of the body. In the cavity structure, gas uniformly enters the cavity through the gas inlet pipe and the plurality of gas inlets, so that the uniformity of the gas in the cavity can be ensured; meanwhile, the sizes of the air inlets are different, so that the air flow of each air inlet can be basically the same, and the uniformity of air inlet is guaranteed; the invention has the advantages of compact design, reasonable structure, convenient operation, stable and uniform plasma distribution, and is suitable for preparing large-area and uniform MPCVD deposition products.

Description

MPCVD cavity structure and MPCVD equipment
Technical Field
The invention relates to an MPCVD cavity structure and MPCVD equipment, belonging to the field of microwave plasma vapor deposition equipment.
Technical Field
The Chemical Vapor Deposition (CVD) technology is widely applied to the preparation of films/crystals such as diamond, diamond-like carbon, silicon oxide, amorphous silicon and the like, and the CVD method has the advantages of low deposition temperature, easy control of film components, good uniformity and the like. Among them, Microwave Plasma Chemical Vapor Deposition (MPCVD) is the most promising means for preparing high quality and large area diamond at present because of its advantages of electrodeless discharge, less pollution, high plasma density and the like. The MPCVD is a method of depositing diamond on a substrate material under a certain condition by decomposing gas into carbon-containing reactive groups by high-temperature plasma, and has great advantages in both synthesis quality and size.
However, in the prior art, generally, one air inlet of an MPCVD apparatus is disposed at one side of the chamber, and a vacuum apparatus is disposed at the bottom of the chamber, so that the problems of uneven air inlet, non-compact apparatus, inconvenient use, and the like are caused, and finally the problems of uneven product, internal defect, large internal stress, and the like are caused. How to prepare high-quality products uniformly and stably is a technical bottleneck to be solved urgently.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides an MPCVD cavity structure, which aims to solve the problem of uneven gas distribution in the cavity of the conventional MPCVD equipment, ensure the uniformity of plasma in the cavity structure and improve the uniformity and stability of products.
In order to solve the technical problems, the technical scheme of the invention is as follows: an MPCVD cavity structure comprises a hollow body, wherein an air inlet pipe is arranged on the body, and a plurality of air inlets communicated with the air inlet pipe are arranged on the inner wall of the body; the body is provided with an air outlet pipe communicated with the inner cavity of the body.
Furthermore, the plurality of air inlets are divided into one layer or a plurality of layers with different height positions, and the number of the air inlets in the single-layer air inlet is a plurality of air inlets which are positioned at the same height position.
Preferably, the number of the air inlets is 4 or more, more preferably 6 or more, and still more preferably 8 or more.
Preferably, an annular air path is arranged in the side wall of the body and is respectively communicated with the air inlet and the air inlet pipe. Obviously, each intake port may also be in direct communication with the intake pipe.
In the intake ports of the same layer, the cross-sectional area of the intake port decreases as the position is closer to the intake pipe. Therefore, the air flow of each air inlet in unit time is basically the same through reasonable design of the air inlets and the annular air path. When a plurality of air inlet pipes are arranged, the distance is calculated according to the distance between the air inlet and the nearest air inlet pipe, and the closer the air inlet is to the air inlet pipe, the smaller the air inlet is.
Preferably, the inlets of the same layer are substantially uniformly distributed on the sidewall of the cavity.
Further, the annular gas path is distributed around the upper part of the cavity, preferably, the gas path is located inside or outside the edge of the upper part of the body, and when the gas path is located inside the edge of the upper part of the cavity, the gas path does not affect the coupling of the microwave.
The quantity of intake pipe is a plurality of, and each intake pipe is along body circumference evenly distributed. Furthermore, the number of the air inlet pipes is 2, and the air inlet pipes are symmetrically distributed on the body. Further, the intake pipe quantity is 3, and the contained angle between the line of intake pipe and body central axis is 120.
The included angle between the airflow incidence direction of the air inlet and the vertical direction is 0-90 degrees, preferably the included angle is smaller than 80 degrees, and further preferably the included angle is 20-70 degrees. Preferably, the air flow incidence direction of the air inlet is obliquely downwards emitted into the inner cavity of the body.
The air outlet pipe is arranged below the air inlet.
An air suction hole is formed in the side wall of the body and communicated with an air inlet of the vacuumizing equipment; preferably, the vacuum pumping device is communicated with the pumping hole through a pipeline; further preferably, the diameter of the air exhaust holes is smaller than 3mm, and the number of the air exhaust holes is multiple; preferably, the diameter of the air extraction hole is less than 2mm, and more preferably less than 1mm, and the diameter of the air extraction hole is not too large, which may cause electromagnetic wave leakage and affect the reaction efficiency. The pipeline is provided with a vacuum gauge and is connected with a vacuum pump.
Preferably, the vacuum pumping device is a vacuum pump, and further, the vacuum pump is a molecular pump.
The cooling cavity is arranged inside the side wall of the body, the side wall of the body is provided with a water inlet and a water outlet which are communicated with the cooling cavity, preferably, the water inlet is arranged at the bottom of the side wall of the body, and the water outlet is arranged on the upper portion of the side wall of the body.
The bottom of the body is provided with a base.
Further, the height of the outlet pipe is not higher than the upper surface of the base.
An MPCVD equipment comprises a microwave source and a coupling unit, and further comprises the MPCVD cavity structure, wherein the microwave source is butted with the top end of the MPCVD cavity structure through the coupling unit.
As an embodiment of the present invention, an MPCVD apparatus includes a microwave system, a gas flow system, a chamber structure, and a susceptor, wherein the microwave system includes a microwave source and a coupling unit for introducing microwaves into the chamber structure; the air flow system comprises an air inlet pipe and a plurality of air inlets connected with the air inlet pipe through air paths, the air inlets are uniformly distributed on the inner wall of the body, and the air flow system also comprises an air outlet; the base is positioned at the bottom of the inner cavity of the body and used for placing a sample growth substrate;
as an embodiment of the present invention, an MPCVD apparatus includes a microwave system, a gas flow system, a chamber structure, and a susceptor, wherein the microwave system includes a microwave source and a coupling unit for introducing microwaves into the chamber structure; the air flow system comprises a plurality of air inlet pipes and a plurality of air inlets connected with the air inlet pipes through air paths, the air inlets are uniformly distributed around the inner wall of the body, the sizes of the air inlets are different, and the air holes closer to the air inlet pipes are smaller, and the air flow system also comprises an air outlet; the base is positioned at the bottom of the body and used for placing a sample growth substrate.
As another embodiment of the present invention, an MPCVD apparatus includes a microwave system, a gas flow system, a chamber structure, a susceptor, the microwave system including a microwave source and a coupling unit for introducing microwaves into a reaction chamber; the air flow system comprises a plurality of air inlet pipes and a plurality of air inlets connected with the air inlet pipes through air paths, the air inlets are uniformly distributed around the inner wall of the body, air horizontally enters the body through the air inlets, and the air flow system also comprises an air outlet; the base is positioned at the bottom of the inner cavity of the body and used for placing a sample growth substrate.
As another embodiment of the invention, the MPCVD equipment comprises a microwave system, a gas flow system, a cavity structure and a base, wherein the microwave system comprises a microwave source and a coupling unit for introducing microwaves into the inner cavity of a body; the air flow system comprises a plurality of air inlet pipes and a plurality of air inlets connected with the air inlet pipes through air paths, the air inlets are uniformly distributed around the inner wall of the body, air enters the body through the air inlets and the side wall at a certain angle, the angle is smaller than 90 degrees, preferably smaller than 80 degrees, further preferably 20-50 degrees, and the air flow system also comprises an air outlet; the base is positioned at the bottom of the body and used for placing a sample growth substrate.
As another embodiment of the present invention, an MPCVD apparatus includes a microwave system, a gas flow system, a chamber structure, and a susceptor, wherein the microwave system includes a microwave source and a coupling unit for introducing microwaves into the chamber structure; the air flow system comprises a plurality of air inlet pipes and a plurality of air inlets connected with the air inlet pipes through air paths, the air inlets are uniformly distributed around the inner wall of the body, the air flow system also comprises an air outlet and a vacuum pumping system, the air pumping port is positioned on the side wall of the body, the air outlet comprises a plurality of air outlet holes, the air outlet is positioned on the side wall of the body, the diameter of each air outlet hole is not more than 3mm, and the air outlet is connected with vacuum equipment through a pipeline; the base is positioned at the bottom of the body and used for placing a sample growth substrate.
The coupling unit is used for guiding microwaves from a microwave source into the cavity structure, and preferably comprises a waveguide, a microwave antenna and the like.
Compared with the prior art, the invention has the beneficial effects that:
(1) gas uniformly enters the cavity through the gas inlet pipe and the plurality of gas inlets, and the uniformity of gas in the cavity is ensured.
(2) The air inlets are different in size, so that the air flow of each air inlet is basically the same, and the uniformity of air inlet is guaranteed;
(3) the gas inlet guides the gas to be injected into the cavity at a certain angle, so that the deposition speed is accelerated;
(4) the extraction holes are positioned on the side wall, the diameter of the vacuumizing air outlet is not more than 3mm, microwave leakage is reduced, the vacuum gauge is connected with the vacuum pump through a pipeline, the vacuum gauge is intensively distributed on a pipeline of a cavity accessory, the vacuum degree measurement is convenient, the distance between vacuum equipment and the cavity is shortened, and the vacuumizing time is shortened;
(5) the invention has the advantages of compact design, reasonable structure, convenient operation, stable and uniform plasma distribution, and is suitable for preparing large-area and uniform MPCVD deposition products.
Drawings
FIG. 1 is a schematic structural diagram of an MPCVD chamber of the present invention.
FIG. 2 is a schematic diagram of the structure of an MPCVD apparatus of the present invention.
Figure 3 is a cross-sectional view of the location of the air inlet conduit of one body of the present invention.
Fig. 4 is an enlarged vertical cross-sectional view of the air passage portion of the present invention.
In the figure, 1-body; 2-a water inlet; 3, an air inlet pipe; 4-observation window; 5-temperature test window; 6-an air inlet; 7, a water outlet; 8. 9, 11-vacuum gauge mounting holes; 10-vacuum pump connecting flange; 12-electromagnetic valve connecting pipe; 13-air extraction holes; 14, a gas path; 15-side wall of body; 16-a base; 17-an air outlet pipe; 18-a cooling chamber; 19-a microwave source; 20-coupling unit.
Detailed Description
The present invention will be described in detail below with reference to the embodiments with reference to the attached drawings. It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict. For convenience of description, the words "upper", "lower", "left" and "right" in the following description are used only to indicate the correspondence between the upper, lower, left and right directions of the drawings themselves, and do not limit the structure.
Fig. 1 is a schematic structural view of an MPCVD chamber structure according to the present invention. The MPCVD cavity structure of the embodiment comprises a hollow body 1, wherein an air inlet pipe 3 is arranged on the body 1, a plurality of air inlets 6 communicated with the air inlet pipe 3 are arranged on the inner wall of the body 1, and the air inlets 6 are uniformly distributed at the same height position of the inner wall of the body 1; an air outlet pipe 17 communicated with the inner cavity of the body 1 is arranged on the body 1.
An annular air passage 14 is arranged in the side wall 15 of the body, and the annular air passage 14 is respectively communicated with the air inlet 6 and the air inlet pipe 3. The gas enters the gas inlet 6 from the gas inlet pipe 3 and uniformly enters the body 1. Wherein, the air inlet 6 is a hole with a large middle and small two sides, and the hole close to the air inlet pipe 3 is smaller. The quantity of intake pipe 3 is 2, and each intake pipe 3 is along body circumference symmetric distribution. The air outlet pipe 17 is arranged below the air inlet 6.
An air suction hole 13 is formed in the side wall 15 of the body, and the air suction hole 13 is communicated with an air inlet of a vacuum pump; preferably, the vacuum pump is communicated with the air suction hole 13 through a pipeline; further preferably, the diameter of the air exhaust holes 13 is less than 3mm, and the number of the air exhaust holes 13 is multiple.
The pipeline is provided with a vacuum gauge mounting hole, and the vacuum gauge is mounted on the vacuum gauge mounting hole.
The molecular pump is installed through a vacuum pump connecting flange 10, gas in the cavity 1 is pumped out through a vacuum pump air pumping hole 13, and meanwhile, the microwave leakage can be prevented through the vacuum pump air pumping hole 13. The solenoid valve is installed on the solenoid valve connection pipe 12.
The cooling cavity 18 is arranged inside the body side wall 15, the water inlet 2 and the water outlet 7 which are communicated with the cooling cavity 18 are arranged on the body side wall 15, preferably, the water inlet 2 is arranged at the bottom of the body side wall, and the water outlet 7 is arranged at the upper part of the body side wall.
Cooling water enters from the water inlet 2, passes through the cooling cavity 18 in the inner wall of the body, enters the upper cavity and is discharged from the water outlet 7.
The side wall of the body is externally provided with an observation window 4 so as to conveniently observe the internal condition of the body 1. The body is also provided with a temperature test window 5 for installing an infrared thermometer.
The foregoing examples are set forth to illustrate the present invention more clearly and are not to be construed as limiting the scope of the invention, which is defined in the appended claims to which the invention pertains, as modified in all equivalent forms, by those skilled in the art after reading the present invention.

Claims (3)

1. An MPCVD cavity structure comprises a hollow body (1), and is characterized in that an air inlet pipe (3) is arranged on the body (1), a plurality of air inlets (6) communicated with the air inlet pipe (3) are arranged on the inner wall of the body (1), and an air outlet pipe (17) communicated with the inner cavity of the body (1) is arranged on the body (1); the number of the air inlet pipes (3) is multiple, and the air inlet pipes (3) are uniformly distributed along the circumferential direction of the body; the plurality of air inlets (6) are divided into a plurality of layers with different height positions, the number of the air inlets in a single-layer air inlet (6) is a plurality of air inlets which are positioned at the same height position, and the air inlets in the single-layer air inlet (6) are uniformly distributed on the inner wall of the body (1); the air flow entering direction of the air inlet is obliquely downwards emitted into the inner cavity of the body, and the included angle between the air flow entering direction of the air inlet and the vertical direction is 50-70 degrees; an annular gas path (14) is arranged in the side wall (15) of the body, and the annular gas path (14) is respectively communicated with the gas inlet (6) and the gas inlet pipe (3); the cross-sectional area of the air inlet pipe (3) is smaller as the position is closer; an air suction hole (13) is formed in the side wall (15) of the body, and the air suction hole (13) is communicated with an air inlet of the vacuum pumping equipment; the vacuum pumping equipment is communicated with the air pumping hole (13) through a pipeline; the diameter of the air exhaust holes (13) is less than 3mm, and the number of the air exhaust holes (13) is multiple; a cooling cavity (18) is arranged inside the side wall (15) of the body, a water inlet (2) and a water outlet (7) which are communicated with the cooling cavity (18) are arranged on the side wall (15) of the body, the water inlet (2) is arranged at the bottom of the side wall of the body, and the water outlet (7) is arranged at the upper part of the side wall of the body; the annular gas path (14) is located inside the cooling cavity (18).
2. MPCVD chamber structure in accordance with claim 1, characterized in that the bottom of the body (1) is provided with a susceptor (16).
3. An MPCVD apparatus comprising a microwave source and a coupling unit, further comprising the MPCVD chamber structure of any of claims 1-2, wherein the microwave source is butted against the top end of the MPCVD chamber structure through the coupling unit.
CN201711439483.5A 2017-12-27 2017-12-27 MPCVD cavity structure and MPCVD equipment Active CN108149223B (en)

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CN108149223B true CN108149223B (en) 2020-08-07

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110804732B (en) * 2019-06-17 2021-09-17 湖上产业发展集团有限公司 Plasma CVD apparatus

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CN102787302A (en) * 2011-05-18 2012-11-21 中国科学院微电子研究所 Gas uniformizing device for improving film preparation technology
CN202865334U (en) * 2012-08-27 2013-04-10 北京博宇半导体工艺器皿技术有限公司 Annular-air thermal-insulation vapor phase deposition furnace for preparing pyrolytic boron nitride product
CN103569998A (en) * 2013-11-26 2014-02-12 苏州捷迪纳米科技有限公司 Device and method for preparing carbon nanotube
CN104103484A (en) * 2013-04-15 2014-10-15 中微半导体设备(上海)有限公司 Gas supplying device and plasma processing device
CN104480451A (en) * 2014-12-12 2015-04-01 重庆墨希科技有限公司 Device for growing graphene in large areas
CN105695957A (en) * 2014-11-28 2016-06-22 北京北方微电子基地设备工艺研究中心有限责任公司 Air inlet device and semiconductor processing equipment
CN206037678U (en) * 2016-08-18 2017-03-22 泉州市三星消防设备有限公司 Drying device
CN106894001A (en) * 2015-12-17 2017-06-27 杨永亮 The even device of air of combined type

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1501435A (en) * 2002-11-15 2004-06-02 三星电子株式会社 Gas injection apparatus for semiconductor processing system
CN102787302A (en) * 2011-05-18 2012-11-21 中国科学院微电子研究所 Gas uniformizing device for improving film preparation technology
CN202865334U (en) * 2012-08-27 2013-04-10 北京博宇半导体工艺器皿技术有限公司 Annular-air thermal-insulation vapor phase deposition furnace for preparing pyrolytic boron nitride product
CN104103484A (en) * 2013-04-15 2014-10-15 中微半导体设备(上海)有限公司 Gas supplying device and plasma processing device
CN103569998A (en) * 2013-11-26 2014-02-12 苏州捷迪纳米科技有限公司 Device and method for preparing carbon nanotube
CN105695957A (en) * 2014-11-28 2016-06-22 北京北方微电子基地设备工艺研究中心有限责任公司 Air inlet device and semiconductor processing equipment
CN104480451A (en) * 2014-12-12 2015-04-01 重庆墨希科技有限公司 Device for growing graphene in large areas
CN106894001A (en) * 2015-12-17 2017-06-27 杨永亮 The even device of air of combined type
CN206037678U (en) * 2016-08-18 2017-03-22 泉州市三星消防设备有限公司 Drying device

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