KR101776401B1 - Atomic layer thin film deposition apparatus with uniform gas flow - Google Patents

Atomic layer thin film deposition apparatus with uniform gas flow Download PDF

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KR101776401B1
KR101776401B1 KR1020150139526A KR20150139526A KR101776401B1 KR 101776401 B1 KR101776401 B1 KR 101776401B1 KR 1020150139526 A KR1020150139526 A KR 1020150139526A KR 20150139526 A KR20150139526 A KR 20150139526A KR 101776401 B1 KR101776401 B1 KR 101776401B1
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South Korea
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gas
reaction chamber
thin film
atomic layer
exhaust
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KR1020150139526A
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Korean (ko)
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KR20170040815A (en
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정재학
최재호
박인성
임행돈
강기안
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(주)씨엔원
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition

Abstract

The present invention relates to an atomic layer thin film deposition apparatus which forms a uniform reaction gas flow, and includes a gas introduction part, a reaction chamber, and an exhaust part formed in a vacuum chamber, wherein the gas moving from the gas introduction part to the exhaust part through the reaction chamber A baffle type exhaust dispersing unit having a plurality of guide holes for uniformly dispersing and exhausting the gas is provided between the reaction chamber and the exhaust part, .
It is an object of the present invention to provide an atomic layer thin film deposition apparatus capable of inducing a uniform gas flow on a substrate to improve the uniformity of the atomic layer thin film and to minimize the space of the reaction chamber, The present invention provides a new atomic layer thin film deposition apparatus capable of shortening the injection time of the gas and shortening the process time.

Description

TECHNICAL FIELD [0001] The present invention relates to an atomic layer thin film deposition apparatus for forming a uniform reactive gas flow,

The present invention relates to an atomic layer thin film deposition apparatus, and more particularly, to an atomic layer thin film deposition apparatus for forming a uniform reaction gas flow in a traveling wave system capable of suppressing the residue of the reaction source gas during exhaust and inducing a uniform flow on the substrate Layer thin film deposition apparatus.

Device technologies such as semiconductors require a higher degree of integration, and deposition of thin films uniformly on a fine line width has become a critical requirement.

Generally, the atomic layer thin film deposition apparatus crosses the gases of the raw material of the reaction material at regular time intervals and flows into the reaction tube periodically, so that the material is grown in such a manner that one atomic layer is successively grown in each reaction step.

Such an atomic layer thin film growth apparatus has a showerhead method in which gas is uniformly sprayed on a substrate and deposited, and a traveling wave method in which the substrate is discharged from one end of the substrate to the other end of the substrate. In the shower head method or the traveling wave method, inducing a uniform flow of gas on the substrate is an essential condition for uniform deposition of the thin film.

1 and 2 are schematic views showing the structure of a conventional traveling wave type atomic layer thin film deposition apparatus. Fig. 1 shows a side view and Fig. 2 shows a plan view.

As shown in Figs. 1 and 2, in the conventional traveling wave type atomic layer thin film deposition apparatus in which two or more kinds of source gases are alternately flowed on the substrate, the gas can be uniformly flowed over the substrate for a short pulse time The gas injection portion was designed to induce a uniform flow of gas on the substrate.

However, since it is difficult to design the exhaust part 30 and the exhaust gas can not be sufficiently exhausted during the actual process, it is not possible to induce a uniform flow of the gas in the exhaust part, Chemical reaction and the like, which makes it difficult to uniformly deposit the thin film on the substrate, and causes contamination particles.

That is, the source gas (SOURCE A, SOURCE B) is introduced in the gas introducing portion 10 and the dispersing means 15 or the diffusion means is provided between the gas introducing portion and the reaction chamber for uniform introduction of the reaction gas, Thereby forming a flow of the uniform reaction gas into the chamber 20. However, there is a problem that the gas flow in the entire reaction chamber is directed to the exhaust port due to the low pressure of the exhaust portion 30 formed of one exhaust hole or exhaust port, and the gas flow is uneven in the exhaust portion 30 side. There is a problem that a turbulent flow or a residual gas is formed in the exhaust port 30.

Korean Registered Patent No. 10-0356965 (Registered Date: October 04, 2002) Korean Registered Patent No. 10-0372017 (Registered Date: Jan. 29, 2003)

The atomic layer thin film deposition apparatus for forming a uniform reaction gas flow according to the present invention has the following problems.

First, the present invention provides an atomic layer thin film deposition apparatus capable of inducing a uniform gas flow on a substrate, thereby improving the uniformity of atomic layer thin film.

Second, the present invention provides a novel atomic layer thin film deposition apparatus capable of shortening the injection time of the gas by minimizing the space of the reaction chamber and minimizing the use of the reactive gas and the purge gas, thereby shortening the process time .

The present invention has been made in view of the above problems, and it is an object of the present invention to provide an apparatus and method for controlling the same.

According to an aspect of the present invention, there is provided a method for manufacturing a vacuum chamber including a gas introduction part formed in a vacuum chamber, a reaction chamber, and an exhaust part, wherein a traveling wave, which reacts through a gas moving from the gas introduction part to the exhaust part via the reaction chamber, Type atomic layer thin film deposition apparatus according to the present invention is characterized in that baffle type exhaust dispersing means is provided between the reaction chamber and the exhaust portion and has a plurality of guide holes for uniformly dispersing and exhausting the gas.

Preferably, the gas introducing portion is formed with independent inlet so that at least two or more gases are introduced into the reaction chamber of the vacuum chamber from the outside, and the exhaust dispersing means includes a plurality of guide holes Are preferably formed side by side in the longitudinal direction.

The guide hole may be at least one of a circular shape, an elliptical shape, a rectangular shape, and a rhombic shape. The cross-sectional area of the guide hole may be larger in both end directions.

In addition, it is preferable that the guide holes are arranged so as to have a shorter distance from each other, and that the guide holes have the same spacing, and the exhaust dispersing means has at least two It is preferable that at least two of them are disposed apart from each other.

Preferably, the apparatus further comprises a baffle-type introducing / dispersing means provided between the gas introducing portion and the reaction chamber and provided with a plurality of guide holes for uniform dispersion of the gas introduced into the reaction chamber, It is preferable that at least two or more of them are spaced apart from each other between the introduction part and the reaction chamber.

The atomic layer thin film deposition apparatus for forming a uniform reaction gas flow according to the present invention has the following effects.

First, the present invention provides an atomic layer thin film deposition apparatus capable of preventing uniform flow of gas on a substrate while preventing turbulent flow or exhaustion from the exhaust gas at each of the reaction source gases.

Second, the present invention provides a new atomic layer thin film deposition apparatus capable of shortening the injection time of the gas, thereby shortening the process time, by minimizing the space of the reaction chamber and minimizing the use of reactive gas and purge gas do.

Third, the present invention provides an atomic layer thin film deposition apparatus that disperses a flow of a reaction gas concentrated at an exhaust part to suppress turbulence of a reaction gas at an exhaust part and reduce the cause of contamination.

1 is a side view showing a schematic structure of a conventional atomic layer thin film deposition apparatus.
2 is a plan view showing a schematic structure of a conventional atomic layer thin film deposition apparatus.
3 is a side view of an atomic layer thin film deposition apparatus forming a uniform reaction gas flow according to an embodiment of the present invention.
4 is a plan view of an atomic layer thin film deposition apparatus forming a uniform reaction gas flow according to an embodiment of the present invention.
FIGS. 5 and 6 are diagrams illustrating various examples of the means for dispersing the exhaust gas in the atomic layer thin film deposition apparatus forming the uniform reaction gas flow according to the embodiment of the present invention.
FIG. 7 is a graph showing the uniformity of the deposited thin film as a result of the conventional thin film deposition using the atomic layer thin film deposition apparatus.
FIG. 8 is a graph showing the uniformity of a deposited thin film as a result of thin film deposition using an atomic layer thin film deposition apparatus forming a uniform reaction gas flow according to an embodiment of the present invention.

Further objects, features and advantages of the present invention will become more apparent from the following detailed description and the accompanying drawings.

Before describing the present invention in detail, it is to be understood that the present invention is capable of various modifications and various embodiments, and the examples described below and illustrated in the drawings are intended to limit the invention to specific embodiments It is to be understood that the invention includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.

It is to be understood that when an element is referred to as being "connected" or "connected" to another element, it may be directly connected or connected to the other element, . On the other hand, when an element is referred to as being "directly connected" or "directly connected" to another element, it should be understood that there are no other elements in between.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In this specification, the terms "comprises" or "having" and the like refer to the presence of stated features, integers, steps, operations, elements, components, or combinations thereof, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

Further, terms such as " part, "" unit," " module, "and the like described in the specification may mean a unit for processing at least one function or operation.

In the following description of the present invention with reference to the accompanying drawings, the same components are denoted by the same reference numerals regardless of the reference numerals, and redundant explanations thereof will be omitted. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

FIG. 3 is a side view of an atomic layer thin film deposition apparatus for forming a uniform reaction gas flow according to an embodiment of the present invention, and FIG. 4 is a cross-sectional view of an atomic layer thin film deposition apparatus for forming a uniform reaction gas flow according to an embodiment of the present invention. Fig.

3, the atomic layer thin film deposition apparatus according to an embodiment of the present invention includes a gas introducing portion 100 formed in a vacuum chamber, a reaction chamber 200, and an evacuation portion 300, (200) and the exhaust part (300) through a gas moving from the reaction chamber (100) to the exhaust part (300) through the reaction chamber (200) And a baffle type exhaust dispersing means 250 having a plurality of guide holes 255 for uniformly dispersing and exhausting the gas.

That is, an embodiment of the present invention provides a vacuum chamber having an exhaust port on one side thereof, and includes an inlet portion into which two or more kinds of reaction gases from outside the vacuum chamber are introduced, a reaction portion in which a sample is placed, A chamber 200; A baffle type introducing and dispersing means 150 provided at the introduction portion for separating two or more kinds of reaction gases and uniformly injecting a distribution of the gas flow rate into the reaction chamber 200; And baffle type exhaust dispersing means 250 for inducing a uniform flow or flow of gas reacted in the reaction chamber 200 to the exhaust port.

As described above, the atomic layer thin film deposition apparatus applied to the embodiment of the present invention is a traveling wave type deposition apparatus in which the atomic layer thin film deposition apparatus is injected from one end of a substrate and exhausted to the other end of the substrate, It is possible to uniformize the spatial distribution of the reactive gas to be injected in order to improve the uniformity of the thin film deposited and to minimize the space of the reaction chamber 200 And minimizes the use of reaction gas and purge gas, thereby shortening the injection time of the gas and shortening the process time.

3 and 4, the atomic layer deposition apparatus according to an embodiment of the present invention may be configured such that the first reaction gas is injected into the reaction chamber 200 for a predetermined period of time, The second reaction gas is injected for a predetermined period of time and then purged again using an inert gas to repeat the process of reacting the reaction gas in the reaction chamber 200 located at one side of the chamber And is moved to the other side via the chamber 200 to deposit a thin film having a desired thickness on a wafer or a glass substrate.

In the traveling wave type atomic layer thin film deposition apparatus, uniform gas flow can be induced by a uniform flow of the reaction gas introduced over the substrate over the entire surface of the substrate. In the conventional atomic layer thin film deposition apparatus, As shown in FIGS. 1 and 2, the reaction gas introducing portion 100 is provided with the introduction dispersing means 150 for dispersing or diffusing a uniform introduction gas so that the first half of the substrate (the reaction gas introducing portion 100 side) There is a problem that the reaction gas flows in one exhaust hole formed in the end portion of the chamber, and therefore, the flow of the reaction gas becomes dense toward the exhaust hole, resulting in non-uniformity of the flow of the reaction gas.

3 and 4, the baffle type introduction and dispersion unit 150 formed between the gas introduction unit 100 and the reaction chamber 200 and the reaction chamber 200 Baffle type exhaust dispersion means 250 having a plurality of guide holes 255 for uniformly dispersing and exhausting the gas is provided between the exhaust portion 300 and the exhaust portion 300, The uniform flow of the reaction gas passing through the reaction chamber 200 can be induced over the entire surface of the reaction chamber 200 by making the gas flow uniform. Also, the flow of the reaction gas concentrated in the exhaust part 300 formed by one exhaust hole is dispersed to suppress the turbulence of the reaction gas in the exhaust part 300 and to reduce the cause of contamination.

FIGS. 5 and 6 are diagrams illustrating various examples of the exhaust dispersing means 250 included in the atomic layer thin film deposition apparatus forming a uniform reaction gas flow according to the embodiment of the present invention. 5 and 6 illustrate a structure in which a plurality of guide holes 255 spaced apart from each other on a rod-shaped plate are arranged side by side in the longitudinal direction as exhaust dispersion means 250. In FIG. 5, circular or elliptical guide holes 255 , And Fig. 6 shows a guide hole 255 having a rectangular shape.

5A, in the case of a structure in which elliptical guide holes 255 are arranged side by side at regular intervals on a rod-shaped plate, a flow of reaction gas via the reaction chamber 200 is formed in each guide hole It is possible to induce the exhaust gas to be uniformly dispersed and the flow of the reaction gas flowing to the exhaust part 300 formed by one exhaust hole can induce the flow of the exhaust gas by the exhaust dispersing means 250 .

Since the area of any one of the guide holes 255 is not large or dense, the flow distributing means 250 prevents the flow of the specific portion or the clogging of the specific portion, .

5B, the guide holes 255 formed at both ends of the rod-shaped plate are spaced apart from each other, and the center portion has a larger spacing distance . This is because the gap between the guide holes at both ends is made small and the spacing between the guard holes at the center is made large so as to disperse the flow of the reaction gas flowing into the exhaust part 300 to the center, In order to uniform the entire flow by introducing the flow of the reaction gas via the end portions to the both end portions.

The exhaust means of the embodiment shown in FIG. 5 (c) is an embodiment in which the guide holes 255 are circular and the guide holes 255 are arranged at different diameters. The embodiment illustrated in FIG. 5C proposes a structure in which the diameters of the pilot holes become larger toward both sides in the center circular guide hole 255. As described above, in the reaction chamber 200, The diameter of the circular guide hole 255 is increased toward both ends in order to disperse the flow of the reaction gas which is dense to the side of the reaction chamber 200 to induce a uniform flow of the reaction gas in the reaction chamber 200.

In addition, guide holes 255 having various shapes such as a circular guide hole 255, a triangle, a quadrangle, an ellipse, and the like can be formed, and the spacing between the guide holes 255 can be the same, So that more flow of reaction gas can be induced.

6A and 6B illustrate the case where the guide hole 255 has a rectangular or rhomboid shape in which the sectional area and spacing distance of the guide hole 255 are constant, The structure in which the cross-sectional area is widened and the spacing distance becomes smaller is exemplified. When the cross-sectional area of the guide hole 255 and the spacing distance are constant as shown in FIG. 6A, it is not a structure for forcibly inducing the flow of the reaction gas, but a structure for distributing the entire reaction gas flow to induce a more uniform flow 6 (b) is a sectional view of the guide hole 255 in which the reaction gas passes through the center to reduce the flow of the reaction gas concentrated at the center due to the exhaust part 300, A structure is proposed in which the cross-sectional area of the guide hole 255 is increased and the spacing distance is reduced as the distance between both ends is increased toward both ends.

The atomic layer thin film deposition apparatus for forming a uniform reaction gas flow according to the embodiment of the present invention is characterized in that the above-described exhaust dispersing means 250 is provided between the reaction chamber 200 and the exhaust part 300, It is also preferable that they are provided so as to be spaced apart from each other. This is to increase the dispersion efficiency by stepwise dispersing the flow of the reaction gas flowing from the reaction chamber 200 to the exhaust part 300 to increase the uniformity of the flow.

FIG. 7 is an experimental result of a conventional thin film deposition apparatus using an atomic layer thin film deposition apparatus, and FIG. 8 is an experimental result of thin film deposition using an atomic layer thin film deposition apparatus forming a uniform reaction gas flow according to an embodiment of the present invention.

As shown in FIG. 7, the experimental results of the thin film deposition through the conventional atomic layer thin film deposition apparatus showed that the uniformity of the thin film became uniform toward the reactive gas inlet portion 100, but became even more uneven toward the reactive gas outlet portion 300, It can be confirmed that the left and right sides are non-uniform.

However, as shown in FIG. 8, the experimental results of the thin film deposition using the atomic layer thin film deposition apparatus forming the uniform reaction gas flow according to the embodiment of the present invention show that uniformity of the thin film becomes uniform And the unevenness toward the reaction gas discharging part 300 is significantly improved. In particular, it can be confirmed that the unevenness in the left and right sides of the reaction chamber 200 is greatly improved.

The embodiments and the accompanying drawings described in the present specification are merely illustrative of some of the technical ideas included in the present invention. Accordingly, the embodiments disclosed herein are for the purpose of describing rather than limiting the technical spirit of the present invention, and it is apparent that the scope of the technical idea of the present invention is not limited by these embodiments. It will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

100: gas introduction part 150: introduction dispersion means
200: reaction chamber 250: exhaust dispersion means
253: bar plate 255: guide hole
300:

Claims (10)

A traveling wave type atomic layer thin film deposition apparatus comprising a gas introduction part formed in a vacuum chamber, a reaction chamber, and an exhaust part, wherein the traveling wave type atomic layer thin film deposition device reacts through a gas moving from the gas introduction part to the exhaust part through the reaction chamber,
A baffle type exhaust dispersing means is provided between the reaction chamber and the exhaust portion, in which a plurality of guide holes are formed for uniformly dispersing and exhausting the gas,
The guide holes are arranged so that their cross-sectional areas are arranged in both end directions, and the spacing is shorter when the guide holes are arranged in both end directions,
Wherein at least two or more of the above-mentioned exhaust dispersing means are disposed between the reaction chamber and the exhaust part so as to be spaced apart from each other. The method according to claim 1,
The gas-
Wherein an independent inlet is formed to introduce at least two gases from the outside into the reaction chamber of the vacuum chamber. The method according to claim 1,
Wherein the exhaust dispersing means comprises:
And a plurality of guide holes spaced apart from each other on the rod-shaped plate are formed in parallel in the longitudinal direction. The method according to claim 1,
Wherein the guide hole is at least one of a circular shape, an elliptical shape, a rectangular shape, and a rhombic shape. delete delete The method according to claim 1,
And the guide holes are spaced apart from each other by a predetermined distance, thereby forming a uniform flow. delete The method of claim 2,
Further comprising a baffle-type introducing / dispersing means provided between the gas introducing portion and the reaction chamber and having a plurality of guide holes for uniform dispersion of the gas introduced into the reaction chamber between the gas introducing portion and the reaction chamber. Deposition apparatus. The method of claim 9,
Wherein the introduction /
Wherein at least two or more of the atomic layer deposition chambers are spaced apart from each other between the introduction section and the reaction chamber.







KR1020150139526A 2015-10-05 2015-10-05 Atomic layer thin film deposition apparatus with uniform gas flow KR101776401B1 (en)

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