KR101541154B1 - atomic layer deposition apparatus - Google Patents

Abstract

The apparatus for depositing an atomic layer according to the present invention includes a gas supply pipe in which a gas supply channel is formed, a gas exhaust pipe formed inside a pressure mitigating portion communicating with the gas supply channel, and an outer circumferential surface A gas intake / exhaust unit including a gas intake tube surrounding at least a part of the gas intake / exhaust unit; And a gas injection pressure regulating unit connected to the gas supply passage or the pressure relieving portion to supply gas such that the injection pressure of gas exhausted from the gas exhaust pipe is uniform over the entire length of the gas exhaust pipe, It can be controlled to be injected at a uniform pressure or in a uniform amount.

Description

[0001] The present invention relates to an atomic layer deposition apparatus,

BACKGROUND OF THE INVENTION Field of the Invention [0002] The present invention relates to an atomic layer deposition apparatus, and more particularly, to an atomic layer deposition apparatus in which a gas ejected toward a substrate can be ejected at a uniform pressure.

BACKGROUND ART [0002] In general, a semiconductor device or a flat panel display device is subjected to various manufacturing processes. In particular, a process for depositing a thin film necessary on a wafer or glass substrate is essential.

In the thin film deposition process, sputtering, chemical vapor deposition (CVD), atomic layer deposition (ALD), and the like are mainly used.

Among them, Atomic Layer Deposition (NAM) is a nanoscale thin film deposition technique using chemical adsorption and desorption of a monolayer. Separately separating each reactant and supplying it to the chamber in a pulse form, It is a new concept of thin film deposition technology using chemical adsorption and desorption by surface saturation reaction.

Since the conventional atomic layer deposition technique requires a vacuum state during the deposition process, an additional device for maintaining and managing the vacuum state is required, and the process time is prolonged, resulting in a decrease in productivity.

In addition, since the space for securing the vacuum is limited, it is not suitable for the display industry which seeks for large size and large size.

In addition, the atomic layer deposition apparatus according to the prior art has a problem that the quality of the deposition is not uniform when a large area substrate is processed. This is because the source gas, the reactive gas, and the like injected onto the substrate are not uniformly injected as the substrate becomes larger. This is because it is difficult to maintain a uniform gas injection pressure throughout the apparatus by increasing the atomic layer deposition apparatus for processing a large substrate.

The present invention provides an atomic layer deposition apparatus capable of uniformly maintaining and controlling the injection pressure of a gas to be injected.

The present invention provides an atomic layer deposition apparatus capable of collectively controlling the flow of gas.

The present invention provides an atomic layer deposition apparatus capable of improving the deposition quality of a large area substrate and uniformly depositing atomic layers.

According to an aspect of the present invention, there is provided an atomic layer deposition apparatus including a gas supply pipe in which a gas supply channel is formed, a gas exhaust pipe formed inside a pressure mitigating portion communicating with the gas supply channel, A gas intake / exhaust unit including a gas intake pipe surrounding at least a part of an outer circumferential surface of the gas exhaust pipe so that an intake flow path is formed therein; And a gas injection pressure regulating unit connected to the gas supply passage or the pressure relieving portion to supply gas so that the gas injection pressure across the entire length of the gas exhaust pipe is equal to the injection pressure of the gas exhausted from the gas exhaust pipe.

According to another aspect of the present invention, there is provided an atomic layer deposition apparatus including: a gas supply pipe having a gas supply passage formed therein; a gas exhaust pipe body formed inside a pressure relief portion communicating with the gas supply passage; A gas exhaust pipe including a gas exhaust portion formed in the pressure relief portion so as to face the gas exhaust pipe; And a gas injection pressure regulating unit connected to the gas supply passage or the pressure relieving portion to supply gas so that the gas injection pressure across the entire length of the gas exhaust pipe is equal to the injection pressure of the gas exhausted from the gas exhaust pipe.

According to the above configuration, the partial pressure of the gas to be injected can be controlled or the flow rate of the gas can be controlled to improve the uniformity of the gas to be injected.

The gas injection pressure regulating unit may include a gas flow rate controller connected to the gas supply unit and regulating a flow rate of gas supplied from the gas supply unit; A gas supply switch connected to the gas flow rate control unit to intermittently supply gas; And a gas supply orifice connected between the gas supply switch and the gas supply passage to supply gas to the gas supply passage.

The gas supply orifice may be formed in multiple stages.

The gas supply orifice may include an input port connected to the gas supply switch and an output port connected to the gas supply passage, and the number of the input ports may be smaller than the number of the output ports.

The output ports may be formed at equal intervals.

The gas injection pressure regulating unit may be formed in plurality according to the length of the gas intake / exhaust unit or the gas exhaust pipe.

As described above, the atomic layer deposition apparatus according to the present invention can maintain a uniform gas injection pressure over the entire length of the gas intake / exhaust unit or the gas exhaust pipe.

Since the atomic layer deposition apparatus according to the present invention can inject gas at the same pressure, a uniform amount of gas can be controlled to be injected, thereby improving the quality of the deposition.

Since the atomic layer deposition apparatus according to the present invention can control the flow rate of the gas in one place by using the gas injection pressure control unit, it is possible to easily implement an apparatus for controlling the gas flow rate and the gas injection pressure .

The atomic layer deposition apparatus according to the present invention can uniformly maintain the partial pressure of the gas injected onto the substrate by using the gas injection pressure control unit.

However, the effects of the present invention are not limited to the above-mentioned effects, and other effects not mentioned can be clearly understood by those skilled in the art from the following description.

1 is a schematic view of an atomic layer deposition apparatus according to an embodiment of the present invention.
2 is a perspective view showing the inside of the atomic layer deposition apparatus according to FIG.
FIG. 3 is a perspective view showing a gas intake / exhaust unit used in the atomic layer deposition apparatus according to FIG. 1. FIG.
Fig. 4 is a transverse and longitudinal cross-sectional view of the gas intake and exhaust unit according to Fig. 3;
FIG. 5 is a perspective view showing a gas intake / exhaust unit of the atomic layer deposition apparatus according to FIG. 1 and a gas injection pressure control unit connected thereto. FIG.
6 is a cross-sectional view of the gas intake / air discharge unit and the gas injection pressure regulating unit according to Fig.
7 is a schematic view of an atomic layer deposition apparatus according to another embodiment of the present invention.
FIG. 8 is a perspective view showing a gas exhaust pipe of the atomic layer deposition apparatus according to FIG. 7 and a gas injection pressure control unit connected thereto.

Hereinafter, embodiments according to the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to or limited by the embodiments. Like reference symbols in the drawings denote like elements.

2 is a perspective view showing the inside of the atomic layer deposition apparatus according to the embodiment of FIG. 1. FIG. 3 is a cross-sectional view of the atomic layer deposition according to FIG. Fig. 5 is a cross-sectional view of a gas exhaust / absorber unit of the atomic layer deposition apparatus according to Fig. 1, and Fig. 5 is a cross- FIG. 6 is a cross-sectional view of a gas intake / exhaust unit and a gas injection pressure control unit according to FIG. 5, FIG. 7 is a schematic view of an atomic layer deposition apparatus according to another embodiment of the present invention, FIG. 8 is a perspective view showing a gas exhaust pipe of the atomic layer deposition apparatus according to FIG. 7 and a gas injection pressure control unit connected thereto.

1 to 6, an atomic layer deposition apparatus 100 according to an embodiment of the present invention includes a gas supply line 131, 141 in which gas supply lines 135, 145 are formed, and a gas supply line 135, And gas intake pipes 132 and 142 surrounding at least a part of the outer circumferential surfaces of the gas exhaust pipes 134 and 144 so that the gas exhaust pipes 134 and 144 and the gas intake passages 139 and 149 formed therein are formed inside the pressure relief parts 138 and 148, The gas exhaust pipes 134 and 144 are connected to the gas supply passages 135 and 145 so as to uniform the injection pressure of the gas exhausted from the gas exhaust pipes 134 and 144 over the entire lengths of the gas exhaustion units 130 and 140 and the gas exhaust pipes 134 and 144, Unit 190, as shown in FIG.

According to the above configuration, the partial pressure of the gas to be injected can be controlled or the flow rate of the gas can be controlled to improve the uniformity of the gas to be injected.

The atomic layer deposition apparatus 100 according to an embodiment of the present invention shown in FIGS. 1 and 2 includes a chamber 101 for forming a closed reaction space therein, a substrate 110 provided inside the chamber 101, A first gas sucking and discharging unit 130 for sucking or exhausting a first gas (for example, a source gas) to the substrate 110, a second gas sucking and discharging unit 130 for sucking or exhausting a second gas 2 gas-absorber unit 140 and between the first gas-absorbing-air-sucking and discharging unit 130 and the second gas-sucking and discharging unit 140, and is provided between the first gas-absorbing and discharging unit 130 and the second gas- And a vacuum exhaust pipe 150 that forms a vacuum.

Here, the substrate 110 may be provided to relatively move in a direction (TD) crossing the longitudinal direction of at least one of the first gas intake and exhaust unit 130, the second gas intake and exhaust unit 140, or the vacuum exhaust duct 150 have.

By constituting as described above, there is no need to provide separate means for exhausting or sucking gas by performing exhaust and intake of gas through one gas intake / exhaust unit, and it is possible to improve the throughput of the atomic layer deposition process have.

An atomic layer deposition apparatus 100 according to an embodiment of the present invention includes a source gas or a reactive gas for depositing an atomic layer on an upper surface or a surface of a substrate 110, A plurality of gas intake and exhaust units 130 and 140 for injecting or sucking gas. Here, the first gas may be either a source gas or a reactive gas, and the second gas may be another one of a source gas and a reactive gas. 1 and 2, the first gas intake / exhaust unit 130 can exhaust / intake the source gas, and the second gas intake / exhaust unit 140 can exhaust / suck the reaction gas.

The term "exhaust" means that the first / second gas is injected or blown onto the surface of the substrate 110, and "intake" means that the first / And discharges it to the outside of the chamber 101 by suction.

1, the first gas intake / exhaust unit 130, the second gas intake / exhaust unit 140, and the vacuum exhaust duct 150 are two. Here, the number of the first / second gas intake / exhaust unit 130, 140 and the vacuum exhaust pipe 150 can be further enlarged. It is also possible to arrange in the form of a second gas intake / exhaust unit 140, a vacuum exhaust pipe 150, a first gas intake / exhaust unit 130, a vacuum exhaust pipe 150, a second gas exhaust / A single cycle of the atomic layer deposition process may be performed, but this type of arrangement may be variously modified depending on process requirements, yield, throughput, and the like.

For convenience of explanation, FIG. 2 shows one first / second gas intake / exhaust unit 130, 140 and two vacuum exhaust pipes 150, respectively.

An atomic layer deposition apparatus 100 according to an embodiment of the present invention is enclosed by a chamber 101 forming a reaction space therein and includes a substrate 110, a first / second gas The intake and exhaust units 130 and 140 and the vacuum exhaust pipe 150 are provided.

The substrate 110 may be transferred in a state where a plurality of first and second gas sucking and discharging units 130 and 140 are fixed while being provided inside the chamber 101, / The second gas intake / exhaust unit 130, 140 may be transferred, or the substrate 110 and the gas intake / exhaust unit 130, 140 may be transferred together. When the substrate 110 and the gas sucking and discharging unit 130 and 140 are transported together, they move in opposite directions. Therefore, in any case, the substrate 110 and the gas intake and exhaust unit 130, 140 move relative to each other, and this relative movement direction TD is shown in Figs.

The atomic layer deposition apparatus 100 according to the present invention can relatively move the substrate 110 in both directions relative to the first and second gas intake and exhaust units 130 and 140 so that even when a large area substrate is processed, Space is not needed. In addition, since the foot print can be shortened by shortening the relative movement distance of the substrate 110 relative to the first and second gas intake / exhaust units 130 and 140, the large-area substrate can be easily processed.

The atomic layer deposition apparatus 100 is connected to a first gas supply / discharge unit 160 (Source Line) connected to the first gas discharge / desorption unit 130 to supply a first gas, And a vacuum pumping unit 180 connected to the vacuum exhaust pipe 150 to form a vacuum in the chamber 101. The second gas supply unit 170 may be a vacuum pump, The first and second gas supply units 160 and 170 and the vacuum pumping unit 180 are preferably provided outside the chamber 101. The first and second gas supply units 160 and 170 are respectively connected to the first gas supply pipe 161 ) And the second gas supply pipe 171 to the first gas intake / exhaust unit 130 and the second gas intake / exhaust unit 140, respectively. The vacuum exhaust pipe 150 may be connected to the vacuum pumping unit 180 by a first vacuum pipe 181.

The vacuum pumping unit 180 may be connected not only to the vacuum exhaust pipe 150 but also to at least one of the first gas intake and exhaust unit 130 and the second gas intake and exhaust unit 140. The vacuum pumping unit 180 is connected to the first and second gas intake and exhaust units 130 and 140 to discharge the gas sucked by the first and second gas intake and exhaust units 130 and 140 to the outside of the chamber 101 The pressure inside the chamber 101 may be adjusted or the inside of the chamber 101 may be evacuated. Accordingly, the gas supply pipes 161 and 171 and the second vacuum pipe 182 can be connected to the first and second gas intake / exhaust units 130 and 140. At this time, it is preferable that the gas supply pipes 161 and 171 are connected directly to the first and second gas intake and exhaust units 130 and 140, and the second vacuum pipe 182 is connected directly to the gas intake and exhaust units 130 and 140, May be connected to the spoiler 169, 179. The suction port spoilers 169 and 179 are spaces for primarily collecting the gas sucked by the first and second gas intake / exhaust units 130 and 140.

1, the atomic layer deposition apparatus 100 further includes a chamber dry pump 102 connected to the chamber 101 to form a vacuum inside the chamber 101 can do. A chamber dry pump 102 is provided outside the chamber 101 and may be connected to the chamber 101 by a pumping line 103. At this time, the pumping pipe 103 may be connected to the chamber 101 or to the side where the substrate 110 is located, as shown in FIG. An exhaust port 104 may be formed on the lower side of the chamber 101 or the substrate 110 for connection with the pumping pipe 103.

The atomic layer deposition apparatus 100 according to an embodiment of the present invention can vacuum the inside of the chamber 101 by the operation of the chamber dry pump 102 before starting the deposition process, The inside of the chamber 101 can be vacuum ^- drawn to a base pressure (about 10 ^-3 torr), and the inside of the chamber 101 can be maintained at normal pressure.

When the deposition process is started, the chamber dry pump 102 stops operating and the deposition process can adjust the process pressure inside the chamber 101 (0.1-0.2 torr) by the vacuum pumping unit 180. The vacuum pumping unit 180 and the chamber dry pump 102 are operated together to create a pressure difference inside the chamber 101 and the homogeneity of the gas exhausted from the gas intake and exhaust unit 130, (Uniformity), and uniform spraying.

The function of the chamber dry pump 102 may be eliminated by the first / second gas intake / exhaust unit 130, 140 instead of the chamber dry pump 102. That is, a basic pressure may be formed in the chamber 101 by a gas suction operation of the first and second gas intake / exhaust units 130 and 140, or a pressure difference may be formed.

A substrate temperature variable portion 120 may be provided under the substrate 110. The substrate temperature variable unit 120 can increase or decrease the temperature of the substrate portion to which the first gas (source gas) is supplied. The temperature of the substrate 110 is not varied over the entire substrate 110, It is possible to prevent thermal diffusion, life span reduction, physical deformation, and the like, which are secondary problems due to temperature changes. The substrate temperature variable portion 120 may have a shape such as a heater or a cooling pad.

Since the vacuum exhaust pipe 180 of the atomic layer deposition apparatus 100 according to the embodiment of the present invention is provided between the first gas intake / exhaust unit 130 and the second gas intake / exhaust unit 140, A vacuum may be formed between the first gas intake / exhaust unit 130 and the second gas intake / exhaust unit 140.

It is preferable that the lowermost ends of the first and second gas intake and exhaust units 130 and 140 and the vacuum exhaust pipe 150 maintain a predetermined gap G from the surface of the substrate 110. More specifically, the lowermost end of the gas intake / exhaust unit 130 or 140 must maintain a constant gap G from the surface of the substrate 110. [ It is preferable that the interval G does not exceed 10 to 20 mm. If the gap G is smaller than 10 mm to 20 mm, the lower end of the gas sucking and discharging unit 130 or 140 and the upper surface of the substrate 110 are in contact with each other or too close to each other so that the source gas or the reactive gas can be sucked , And if it is larger than 10 to 20 mm, gas supply efficiency may be lowered.

However, the gap G is not limited to the range not exceeding 10 to 20 mm. The gap G may be changed according to the configuration of the atomic layer deposition apparatus 100 and the range of the gap G may be determined in consideration of the required performance of the atomic layer deposition apparatus 100. [

The first and second gas intake / exhaust units 130 and 140 may perform gas discharge (or injection) and intake (or suction) in one unit or simultaneously. Hereinafter, the gas intake and exhaust unit units 130 and 140 will be described in detail with reference to the drawings. The first gas intake / exhaust unit 130 and the second gas intake / exhaust unit 140 have the same detailed structure, except that they are different from each other only in the type of gas to be exhausted / inhaled.

3 and 4, the first gas intake / exhaust unit 130 and the second gas intake / exhaust unit 140 include gas supply pipes 131 and 141 in which gas supply channels 135 and 145 are formed, gas supply channels 135 and 145 144 which surround at least a part of the outer circumferential surface of the gas exhaust pipes 134, 144 so that the gas exhaust pipes 134, 144 and the gas intake passages 139, 149 formed therein are formed inside the pressure absorbing parts 138, ).

By performing exhaust and intake of gas through one gas intake / exhaust unit 130 and 140 as described above, there is no need to provide separate means for exhausting or sucking gas and it is possible to improve the throughput of the atomic layer deposition process .

The gas exhaust pipes 134 and 144 are formed inside the gas intake pipes 132 and 142 while the gas supply pipes 131 and 141 through which gas supplied from the external gas supply units 160 and 170 pass are formed to protrude outward from the gas intake pipes 132 and 142, . As shown in FIG. 1, the gas supply pipes 131 and 141 may protrude from the outside of the chamber 101 or may be positioned inside the suction gas spoiler 169 and 179.

The gas supply pipes 131 and 141 may be formed on the opposite sides of the gas exhaust pipes 134 and 144 on the basis of the gas intake pipes 132 and 142.

The cross sectional size (diameter or area) of the gas supply pipes 131 and 141 is preferably smaller than the gas exhaust pipes 134 and 144 and the gas intake pipes 132 and 142. Gas supply passages 135 and 145 communicating with each other along the longitudinal direction may be formed in the gas supply pipes 131 and 141. At least one gas supply port 131a or 141a connected to the first gas supply unit 160 or the second gas supply unit 170 may be formed at the uppermost end of the gas supply pipes 131 and 141. [ The gas supply pipes 161 and 171 can communicate with the gas supply passages 135 and 145 through the gas supply ports 131a and 141a.

Since gas supply to the gas supply pipes 131 and 141 is performed through the gas supply ports 131a and 141a, both ends of the gas intake and exhaust unit 130 and 140 are preferably formed in a clogged state.

At least one gas supply nozzle 136 or 146 for communicating the gas supply passages 135 and 145 and the pressure relief 138 and 148 may be formed between the gas supply pipes 131 and 141 and the gas exhaust pipes 134 and 144. The gas supply passages 135 and 145 and the pressure relief portions 138 and 148 can communicate with each other by the gas supply nozzles 136 and 146. [

The gas supply passages 135 and 145, the gas supply nozzles 136 and 146, and the pressure relief portions 138 and 148 are communicated with each other, but the gas intake passages 139 and 149 are not communicated with each other. Since the gas supply passages 135 and 145, the gas supply nozzles 136 and 146 and the pressure relieving portions 138 and 148 are parts involved in exhausting the gas and the gas intake passages 139 and 149 are portions that participate in gas intake, do.

The internal volume of the pressure relief portions 138 and 148 may be formed to be larger than the internal volume of the gas supply passages 135 and 145. The pressure relieving portions 138 and 148 are provided in the gas supply passages 135 and 145 and the gas supply nozzles 136 and 146 so that the gas passing through the narrow and small gas supply nozzles 136 and 146 can sufficiently stay This is a portion having a relatively large volume. When the gas passes through the narrow gas supply nozzles 136 and 146, the pressure of the gas becomes high. The pressure of the gas can be lowered while filling the pressure relaxation parts 138 and 148 having a relatively large volume or space. The gas whose pressure is lowered while filling the pressure relief portions 138 and 148 is exhausted toward the substrate 110. In this process, the gas can be exhausted at a uniform pressure over the entire length of the gas intake and exhaust unit 130 and 140.

The gas is first collected in the pressure relieving portions 138 and 148 and exhausted toward the substrate 110 so that the pressure difference between the substrate 110 and the pressure relieving portions 138 and 148 is uniformly distributed over the entire length of the gas intake / Gas can be injected.

In other words, the pressure relieving parts 138 and 148 are a part of the flow path formed so that the high pressure gas is temporarily held to lower the pressure and the gas can be evenly injected. The pressure relief portions 138 and 148 may have a shape in which the cross-sectional structure is enlarged or expanded, and the shape of the pressure relief portions 138 and 148 is not limited to a jar shape as shown in the drawings.

At least one gas exhaust port 132a, 142a connected to the vacuum pumping unit 180 may be formed in the gas intake pipes 132, 142. The gas exhaust ports 132a and 142a are enclosed by the suction gas spout parts 169 and 179 formed in the chamber 101 and the suction gas spout parts 169 and 179 are connected to the vacuum pumping part 180. The gas exhaust ports 132a and 142a formed in the gas intake pipes 132 and 142 are ports for discharging the first gas or the second gas to the outside of the chamber 101 and may be connected to the vacuum pumping unit 180. The gas that has passed through the gas exhaust ports 132a and 142a may be exhausted after the gas is exhausted from the gas intake and exhaust unit 130 and 140 by the vacuum pumping unit 180 to fill the suction gas spout 169 and 179. However, in some cases, the gas exhaust ports 132a and 142a may be directly connected to the vacuum pipe 181 without passing through the suction port spokes 169 and 179, and the sucked gas may be taken out of the chamber 101. [

4 (b) and 4 (c) are cross-sectional views taken along the line A-A in Fig. 4 (a). Fig. 4 (a) is a longitudinal cross-sectional view of the gas intake and exhaust unit 130, 140 according to Fig.

Referring to FIG. 4A, a plurality of gas supply nozzles 136 and 146 are formed, but only one gas supply nozzle 136 and 146 may be formed.

It is preferable that the gas exhaust ports 132a and 142a are formed on both sides with respect to the gas supply pipes 131 and 141 as shown in FIGS. 1 and 4. However, since the gas exhaust ports 132a and 142a are formed on the gas supply pipes 131 and 141, As shown in FIG.

On the other hand, the gas exhaust pipes 134 and 144 may have at least one gas exhaust part 137 and 147 along the longitudinal direction thereof. The gas exhaust units 137 and 147 are the outlets for putting the gas filled in the pressure relief units 138 and 148 outside the gas intake and exhaust unit 130 and 140. For this purpose, the gas exhaust units 137 and 147 are configured to communicate the outside with the pressure relief units 138 and 148.

The gas intake passages 139 and 149 may be formed so that the space is partitioned by the gas supply nozzles 136 and 146. The gas intake passages 139 and 149 formed between the gas intake pipes 132 and 142 and the gas exhaust pipes 134 and 144 are respectively connected to the gas supply nozzles 136 and 146 by the gas supply nozzles 136 and 146, Respectively. At this time, it is preferable that the gas intake passages 139 and 149 are symmetrically partitioned by the gas supply nozzles 136 and 146.

The gas exhaust pipes 134 and 144 may include exhaust guides 137a and 147a extending from the gas exhaust pipes 134 and 144 to the gas exhaust parts 137 and 147. As shown in FIGS. 3 and 4, the exhaust guides 137a and 147a extend downward to locate the substrate 110, so that the gas passing through the gas exhaust units 137 and 147 is exhausted as much as possible. As shown in Fig.

The exhaust guides 137a and 147a may be formed on both sides so as to be symmetrical with respect to an imaginary line passing through the centers of the gas supply nozzles 136 and 146. As the angle between the exhaust guides 137a and 147a formed on both sides becomes lower So that the gas that has passed through the exhaust guides 137a and 147a can be guided to reach the substrate 110 while being spread.

The gas intake portions 133 and 143 are formed between the circumferential one ends 133a and 143a of the gas intake tubes 132 and 142 and one ends of the exhaust guides 137a and 147a and the gas intake portions 133 and 143 are connected to the gas exhaust tubes 134 and 144 And may be positioned symmetrically with respect to the gas exhaust portions 137 and 147 along the circumferential direction of the gas intake tubes 132 and 142.

The circumferential ends 133a and 143a of the gas intake tubes 132 and 142 forming the gas intake portions 133 and 143 may be bent toward the exhaust guides 137a and 147a.

When the substrate 110 to be processed by the atomic layer deposition apparatus 100 has a large area, it is preferable to cover the entire substrate 110 with a single gas injection by lengthening the gas intake / exhaust unit 130, 140. In this way, when the length of the gas intake and exhaust unit 130 or 140 is long, it is necessary to control the gas to be uniformly injected over the entire length of the gas intake and exhaust unit 130, 140. When the length of the gas sucking and discharging unit 130 or 140 is long, the gas injection pressure is large at a certain portion so that a large amount of gas is injected. At some portion, the gas injection pressure is small so that a small amount of gas can be injected. There is a problem that the atomic layer formed on the substrate 110 is not uniform.

In order to solve this problem, the atomic layer deposition apparatus 100 according to an embodiment of the present invention injects gas into the gas intake and exhaust unit 130 or 140 by using the gas injection pressure control unit 190 to uniformize the gas injection pressure Can be controlled.

5 and 6, the gas injection pressure control unit 190 includes a gas flow rate control unit 191 connected to the gas supply units 160, 170, 260 and 270 to adjust the flow rates of the gases supplied from the gas supply units 160, 170, 260 and 270, A gas supply switch 192 connected to the flow rate control unit 191 to intermittently supply gas and a gas supply passage 192 connected between the gas supply switch 192 and the gas supply channels 135, 145, 235 and 245 to supply gas to the gas supply channels 135, And may include feed-supply engines (193, 194, 195).

The gas injection pressure regulating unit 190 configured as described above controls the flow rate or pressure of the gas so that the first and second gases are uniformly injected onto the substrate 110 over the entire length of the gas sucking and discharging unit 130 and 140 .

FIG. 5 shows an embodiment in which three gas injection pressure regulating units 190 are formed over the entire length of the gas intake and exhaust unit 130, 140. The gas injection pressure regulating unit 190 may be formed in each of the right portion, the middle portion, and the left portion along the longitudinal direction of the gas intake / exhaust unit 130, 140. When the gas intake and exhaust unit units 130 and 140 are long, a plurality of gas injection pressure regulating units 190 are provided to divide the gas into multiple stages through the respective gas flow rate control units 191, The pressure can be adjusted over the length and the uniformity can be improved.

The gas injection pressure regulating unit 190 can be said to form one set of the gas flow rate control unit 191, the gas supply switch 192 and the gas supply orifices 193, 194 and 195. The number of such sets may increase as the gas intake and exhaust unit 130, 140 becomes longer. That is, the gas injection pressure regulating unit 190 may be formed in a plurality according to the length of the gas intake and exhaust unit 130, 140. Hereinafter, the gas injection pressure control unit 190 formed at the center portion in FIG. 5 will be described as an example.

The gas injection pressure regulating unit 190 is connected to the gas supply passages 135 and 145 so that the injection pressure of the gas exhausted from the gas exhaust pipes 134 and 144 toward the substrate 110 is uniform over the entire length of the gas sucking and discharging unit 130 and 140 Gas can be supplied.

Although the gas flows into the gas injection pressure regulating unit 190 at one point, there are several flow paths through which the gas exits the gas injection pressure regulating unit 190. In this way, the gas injection pressure control unit 190 is characterized in that the gas injected into one place is divided into several parts so that the injection pressure can be made uniform or uniform when the gas is discharged.

The gas flow rate control unit 191 of the gas injection pressure control unit 190 is connected to the gas supply units 160 and 170 by gas supply pipes 161 and 171 and is connected to a mass flow controller )to be.

The gas flow rate control unit 191 receives the gas through one of the gas supply units 160 and 170 through the gas supply pipes 161 and 171. The gas flow rate control unit 191 controls the flow rate of the gas It is possible to regulate the gas flow rate fed back based on the pressure information of the gas injected into the gas intake and exhaust unit 130,

The gas supply switch 192 connected to the gas flow rate control unit 191 is a kind of on / off switch which is a switch for blocking or allowing the supplied gas to be injected into the gas intake and exhaust unit 130, As shown in FIG. That is, the gas supply switch 192 is a kind of valve that prevents the gas delivered from the gas flow rate control unit 191 from flowing or flowing into the gas supply and distribution tubes 193, 194, and 195.

The gas supply switch 192 may control the partial pressure of the gas being injected to improve the uniformity of the gas to be injected.

The gas supply switch 192 does not block gas from being exhausted at the extremities of the gas supply orifices 193, 194, and 195. That is, the gas supply switch 192 does not inject the gas into the gas supply branch pipe 193 at the forefront of the channel, and the gas can be supplied to the gas supply channels 135 and 145 at the end 195 of the gas supply pipe .

The gas supply pipes 193, 194 and 195 may be formed in multiple stages from the gas supply switch 192 to the gas intake and exhaust unit 130, 140 or the gas exhaust pipe 230, 240. FIG. 8 exemplarily shows a state in which the gas supply / distribution tubes 193, 194 and 195 descend downward in three stages. The gas supply distributors 193, 194 and 195 are connected to a first gas supply branch 193 connected to the gas supply switch 192, a second gas supply branch 194 connected to the first gas supply branch 193 downward, And a third gas supply orifice 195 connected to the gas supply orifice 194 and the other end connected to the gas intake and exhaust unit 130, 140 in a downward direction.

As described above, the gas supply branch pipes 193, 194, and 195 are formed in a multistage manner from the upward direction to the plural gas discharge points (the third gas supply branch pipe 195) by controlling one gas input point (i.e., It is possible to control the flow rate and the gas pressure in the gas exhaust unit 130 and extend the number of gas output points so that the gas is injected at a uniform pressure over the entire length of the gas intake and exhaust unit 130, 140 or the gas exhaust pipe 230, 240.

One end of the first gas supply pipe 193 may be connected to the gas supply switch 192 as an input port 193a and the other end may be branched into two channels and connected to the second gas supply pipe 194. The first gas supply branch pipe 193 may be formed as one, while the second gas supply pipe orifice 194 may be formed as two. One end of each of the second gas supply branch pipes 194 may be connected to the third gas supply pipe 195 formed by four branches again into two channels. One end of the third gas supply pipe 195 may be connected to the second gas supply pipe 194 and the other end may be connected to the gas intake and exhaust unit 130 or 140 or the gas supply passages 135 and 145 as an output port 195a.

The number of outlets of the gas supply and distribution units 193, 194 and 195 is not limited to two as shown in the drawing, but may be three or more corresponding to the lengths of the gas intake and exhaust units 130 and 140 .

The gas supply branch pipes 193, 194 and 195 are provided with an input port 193a connected to the gas supply switch 192 and an output port 195a connected to the gas supply passages 135, 145, 235 and 245. The number of the input ports 193a corresponds to the output port 195a. That is, the number of the output ports 195a can be increased by forming the gas supply / distribution tubes 193, 194, 195 in multiple stages, so that uniform pressure can be applied over the entire length of the gas intake and exhaust unit 130, 140 or the gas exhaust pipes 230, Gas can be injected.

The output ports 195a of the third gas supply distributor 195 are preferably connected to the gas intake and exhaust units 130 and 140 at equal intervals so that the gas flowing into the gas supply channels 135 and 145 can have a uniform pressure. When the output ports 195a are formed at equal intervals, the gas introduced into the gas supply passages 135 and 145 can have a uniform pressure, so that the gas injected from the gas intake and exhaust units 130 and 140 is also injected at a uniform injection pressure .

Here, the output port 195a of the third gas supply and distributor 195 may be connected to the pressure relief units 138 and 148 as well as to the gas supply channels 135 and 145. The gas injection pressure regulating unit 190 may be connected to the pressure relieving units 138 and 148 so that the injection pressure of the gas exhausted from the gas intake and exhaust unit 130 and 140 is uniform over the entire length of the gas intake and exhaust unit 130 and 140.

7, an atomic layer deposition apparatus 200 according to another embodiment of the present invention is shown. A substrate temperature variable unit 220, first and second gas exhaust pipes 230 and 240 and a vacuum exhaust pipe 250 are provided in the chamber 201. The first and second gas exhaust pipes 230 and 240, And the upper end of the vacuum exhaust pipe 250 are exposed to the outside of the chamber 201.

The atomic layer deposition apparatus 200 includes a first gas supply unit 260 connected to the first gas exhaust pipe 230 to supply a first gas (source gas), a second gas supply unit 260 connected to the second gas exhaust pipe 240, And a vacuum pumping unit 280 connected to the vacuum exhaust pipe 250 to form a vacuum in the chamber 201. The vacuum pumping unit 280 may be a vacuum pump, Here, the vacuum pumping unit 280 is connected to the vacuum exhaust pipe 250 and is not connected to the first / second gas exhaust pipes 230 and 240.

The first gas supply unit 260 is connected to the first gas exhaust pipe 230 by the first gas supply pipe 261 and the second gas supply unit 270 is connected to the second gas supply pipe 270 by the second gas supply pipe 271. [ And is connected to the exhaust pipe 240. The vacuum pumping unit 280 is connected to the vacuum exhaust pipe 250 by a vacuum pipe 281. [

The first gas supply pipe 261, the second gas supply pipe 271 and the vacuum pipe 281 are formed at the upper ends of the first gas exhaust pipe 230, the second gas exhaust pipe 240 and the vacuum exhaust pipe 250, respectively. And connected to a gas supply port (not shown) to inject or withdraw gas. The first gas supply pipe 261, the second gas supply pipe 271 and the vacuum pipe 281 may be connected directly to the gas supply port or may be connected to a suction port May be connected to the housings 269, 279, 289.

At least one gas supply port (not shown) formed at the upper end of the first gas exhaust pipe 230, the second gas exhaust pipe 240, or the vacuum exhaust pipe 250 may be formed.

FIG. 8 shows a gas injection pressure regulating unit 290 connected to the first and second exhaust pipes 230 and 240 of the atomic layer deposition apparatus according to FIG. A plurality of gas injection pressure regulating units 290 may be formed along the entire length of the first and second exhaust pipes 230 and 240. The gas injection pressure regulating unit 290 may include three gas injection pressure regulating units 290, Respectively.

The atomic layer deposition apparatus 200 according to another embodiment of the present invention includes gas supply pipes 231 and 241 in which gas supply passages 235 and 245 are formed and pressure relief parts 238 and 248 communicated with the gas supply passages 235 and 245, The gas exhaust pipes 230 and 240 including the gas exhaust pipes 237 and 247 formed in the pressure relief parts 238 and 248 so as to face the gas exhaust pipe main bodies 234 and 244 formed inside the gas exhaust pipes 235 and 245 and the gas exhaust pipes 230 and 240, And a gas injection pressure regulating unit 290 connected to the gas supply passages 235 and 245 to supply gas so that the injection pressure of the gas exhausted from the gas exhaust pipes 230 and 240 is uniform over the entire length of the gas exhaust pipes 230 and 240.

Here, the configuration of the gas injection pressure regulating unit 290 is the same as that of the gas injection pressure regulating unit 190 shown in Fig. The gas injection pressure regulating unit 290 of the atomic layer deposition apparatus 200 according to another embodiment of the present invention is connected to the gas supply pipes 261 and 271 to regulate the flow rate of the gas supplied from the gas supply units 260 and 270 A flow rate control unit 291 and a gas supply switch 292 connected to the gas flow rate control unit 291 for interrupting supply of gas and a gas supply switch 292 connected between the gas supply flow channels 235 and 245, 235, and 245, respectively.

The gas supply distribution pipes 293, 294 and 295 are formed in multiple stages and have an input port 293a connected to the gas supply switch 292 and an output port 295a connected to the gas supply channels 235 and 245. The input port 293a, The number of the output ports 295a may be smaller than the number of the output ports 295a.

The atomic layer deposition apparatus 200 according to another embodiment of the present invention includes gas supply pipes 231 and 241 in which gas supply passages 235 and 245 are formed and pressure relief parts 238 and 248 in communication with the gas supply passages 231 and 241 Gas exhaust pipes 230 and 240 including gas exhaust pipes 237 and 247 formed in pressure relief parts 238 and 248 so as to face the gas exhaust pipe main bodies 234 and 244 and gas supply passages 235 and 245 formed inside the gas exhaust pipes 230 and 240 And a gas injection pressure regulating unit 290 connected to the pressure relieving units 238 and 248 so as to uniformly supply the gas exhausted from the gas exhaust pipes 230 and 240 over the entire length thereof.

The gas injection pressure regulating unit 290 may be connected to the gas supply passages 235 and 245 of the gas exhaust pipes 230 and 240 but may be connected to the pressure relieving units 238 and 248.

The operation and configuration of the gas injection pressure regulating unit 290 are the same as those of the gas injection pressure regulating unit 190 shown in Figs. 5 and 6, and thus the repetitive description thereof will be omitted.

By providing the gas injection pressure control unit described above, the injection pressure of the gas injected toward the substrate can be controlled to be uniform, the amount of the gas to be injected can be controlled uniformly, and the atomic layer deposition quality of the substrate can be enhanced .

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. Accordingly, the spirit of the present invention should not be construed as being limited to the embodiments described, and all of the equivalents or equivalents of the claims, as well as the following claims, belong to the scope of the present invention .

100, 200: atomic layer deposition apparatus
110, 210:
120, 220: substrate temperature variable portion
130,140: Gas intake and exhaust unit
131, 141, 231, 241:
132, 142:
133, 143: gas intake part
134, 144, 230, 240:
135, 145, 235, 245:
136, 146: gas supply nozzle
137, 147:
138, 148, 238, 248:
150, 250: Vacuum exhaust pipe
160, 170, 260, 270:
180, 280: Vacuum pumping part
190,290: Gas injection pressure regulating unit
191, 291:
192,292: gas supply switch
193, 293:
194,294: Second gas supply branch
195,295: Third gas supply system

Claims (7)

A gas exhaust pipe protruding outside the chamber and having a gas supply passage formed therein; a gas exhaust pipe disposed inside the chamber and having a pressure relief portion communicating with the gas supply passage; A gas intake / exhaust unit including a gas intake pipe surrounding at least a part of an outer circumferential surface of the gas exhaust pipe so that a gas intake passage is formed therein; And
And a gas injection pressure regulating unit connected to the gas supply passage or the pressure relieving portion to supply gas so that the injection pressure of the gas exhausted from the gas exhaust pipe is uniform over the entire length of the gas exhaust pipe,
Wherein the pressure relieving portion has a larger inner volume than the gas supply passage,
Wherein the gas exhaust pipe is provided with a gas exhaust portion having a smaller inner volume than the pressure relief portion as a gas outlet,
Atomic layer deposition apparatus.
delete The method according to claim 1,
Wherein the gas injection pressure regulating unit comprises:
A gas flow rate controller connected to the gas supply unit to adjust a flow rate of gas supplied from the gas supply unit;
A gas supply switch connected to the gas flow rate control unit to intermittently supply gas; And
A gas supply / distribution engine connected between the gas supply switch and the gas supply passage to supply gas to the gas supply passage;
And an atomic layer deposition apparatus.
The method of claim 3,
Wherein the gas supply orifices are formed in multiple stages.
The method of claim 3,
The gas supply orifice includes an input port connected to the gas supply switch and an output port connected to the gas supply passage,
Wherein the number of the input ports is smaller than the number of the output ports.
6. The method of claim 5,
Wherein the output ports are formed at equal intervals.
The method of claim 3,
Wherein the gas injection pressure control unit is formed in a plurality of the gas injection / discharge unit units according to the length of the gas intake / exhaust unit.

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