KR101409977B1 - Atomic layer deposition apparatus - Google Patents

Abstract

The atomic layer deposition apparatus according to the present invention comprises a supply tube formed in the longitudinal direction of the gas supply passage for supplying gas and a gas discharge section formed in the supply tube along the longitudinal direction of the supply tube so as to communicate with the gas supply passage And a gas suction port formed in the suction pipe body along a longitudinal direction of the suction pipe body so as to be communicated with the gas suction pipe, wherein the gas suction pipe is provided with a gas supply pipe and a gas suction path, And the gas supply pipe and the gas suction pipe may be formed separately from each other in a direction crossing the relative movement direction of the substrate with respect to the gas supply pipe and the gas suction pipe. The atomic layer deposition apparatus according to an embodiment of the present invention may reduce gas consumption and deposit an atomic layer by separating a gas supply pipe for supplying a source gas or a reactive gas and a gas suction pipe for sucking and removing a residual gas, It is possible not only to reduce the footprint of the substrate, but also to simplify the mechanical structure for realizing gas supply and suction operation.

Description

[0001] ATOMIC LAYER DEPOSITION APPARATUS [0002]

The present invention relates to an atomic layer deposition apparatus, and more particularly, to an atomic layer deposition apparatus capable of independently controlling a gas supply or a gas suction by separately forming a supply pipe for supplying gas and a suction pipe for sucking gas, And an atomic layer deposition apparatus capable of reducing the processing time.

BACKGROUND ART [0002] In general, a semiconductor device or a flat panel display device is subjected to various manufacturing processes. In particular, a process for depositing a thin film necessary on a wafer or glass substrate is essential.

In the thin film deposition process, sputtering, chemical vapor deposition (CVD), atomic layer deposition (ALD), and the like are mainly used.

Among them, Atomic Layer Deposition (NAM) is a nanoscale thin film deposition technique using chemical adsorption and desorption of a monolayer. Separately separating each reactant and supplying it to the chamber in a pulse form, It is a new concept of thin film deposition technology using chemical adsorption and desorption by surface saturation reaction.

Since the conventional atomic layer deposition technique requires a vacuum state during the deposition process, an additional device for maintaining and managing the vacuum state is required, and the process time is prolonged, resulting in a decrease in productivity.

In addition, since the space for securing the vacuum is limited, it is not suitable for the display industry which seeks for large size and large size.

In addition, the atomic layer deposition apparatus according to the prior art has a limitation in that it is required to be provided in a vacuum chamber. Even when the atomic layer deposition apparatus can be operated under atmospheric pressure, there is a problem in that the supply and suction of the gas can not be independently controlled, have.

The present invention provides an atomic layer deposition apparatus capable of simplifying gas supply and gas suction structures.

The present invention provides an atomic layer deposition apparatus capable of independently controlling gas supply and gas suction and reducing the amount of gas used.

The present invention provides an atomic layer deposition apparatus capable of reducing the footprint of a substrate on which an atomic layer is deposited but increasing the throughput.

According to an aspect of the present invention, there is provided an atomic layer deposition apparatus including a supply tube having a gas supply passage for supplying a gas along a longitudinal direction thereof, A gas supply pipe having a gas discharge portion formed in the supply tube along a longitudinal direction; And a gas suction pipe formed in the suction pipe body along a longitudinal direction of the suction pipe body so as to be in communication with the gas suction pipe, the gas suction pipe having a suction pipe body in which a gas suction pipe for suctioning gas is formed along the longitudinal direction, , The gas supply pipe and the gas suction pipe may be formed separately from each other in a direction crossing the relative movement direction of the substrate with respect to the gas supply pipe and the gas suction pipe.

By separating the gas supply pipe and the gas suction pipe as described above, the structure of the pipe (or pipe) for supplying or sucking various gases used in the atomic layer deposition process can be easily implemented, and the throughput can be improved.

The gas discharge unit may include a plurality of discharge holes or slits formed along the longitudinal direction of the supply pipe.

And a discharge hole in the center of the supply pipe among the plurality of discharge holes may be formed larger than the discharge hole at both end sides of the supply pipe.

The gap between the discharge holes in the central portion of the supply tube among the plurality of discharge holes may be formed to be smaller than the gap between the discharge holes at both end sides of the supply tube.

The width of the slit may be formed to be smaller at both ends of the supply pipe than at the center of the supply pipe.

The discharge hole or the slit may have a shape enlarged toward the outside of the supply pipe body.

The gas suction pipe includes a suction guide extending toward the outside of the suction pipe body to the gas suction part, and the suction guide may have a shape enlarged toward the outside of the suction pipe body.

The lower end of the suction guide and the lower end of the gas discharge portion may be provided at the same height.

The gas supply pipe may include a gas valve that is rotatably provided on the inner surface of the supply pipe body to communicate or block the gas supply passage and the gas discharge portion.

The gas valve may include an opening formed along the longitudinal direction of the gas supply pipe.

Wherein the gas supply pipe includes a gas supply pipe for supplying a source gas and a gas supply pipe for supplying a reactive gas, the gas suction pipe being disposed between a gas supply pipe for supplying a source gas and a gas supply pipe for supplying a reactive gas, And the gas supply pipe is arranged outermost along the direction of relative movement of the substrate with respect to the gas suction pipe, and the gas supply pipe and the gas suction pipe may be arranged symmetrically along the direction of relative movement of the substrate.

The gas supply pipe includes a gas supply pipe for supplying a purge gas, and the gas supply pipe for supplying the purge gas may be disposed between the gas supply pipe and the gas suction pipe for supplying the source gas or the reaction gas.

And a heating unit for heating the surface of the substrate, wherein the heating unit can be arranged to precede the gas supply pipe and the relative movement direction of the substrate with respect to the gas suction pipe.

Wherein the atmospheric pressure plasma generating section is arranged to precede the gas supply pipe with respect to the gas supply pipe and the direction of relative movement of the substrate with respect to the gas suction pipe or between the gas suction pipes .

The gas supply pipe and the gas suction pipe can supply and suck gas at normal pressure, respectively.

As described above, since the atomic layer deposition apparatus according to the present invention deposits at atmospheric pressure, it is possible to expect an effect of increasing the productivity because it requires no apparatus and time for securing a separate vacuum, and it is also applicable to the display field can do.

In the atomic layer deposition apparatus according to the present invention, various heat sources such as a halogen lamp and a laser can be used in the method of heating the surface of the substrate. In this case, the entire substrate is not heated but only the portion where the source is injected is temporarily heated , It is possible to prevent thermal diffusion, reduction in life span, physical deformation, and the like, which are other incidental problems due to the temperature increase.

In addition, the atomic layer deposition apparatus according to the present invention can increase the deposition rate by using an atmospheric plasma, an ultraviolet lamp, a laser, or the like, and can deposit a metal thin film and a nitride film.

In addition, the atomic layer deposition apparatus according to the present invention can be continuously operated, and the pre- and post-treatment can be performed together on a single line. Multiple source gas supply pipes can be provided to form a multi-component system. In this case, there is an advantage that the type of the heat source and the supplied thermal energy can be individually adjusted according to the decomposition temperature of each source gas.

The atomic layer deposition apparatus according to the present invention may be capable of two-sided deposition when the gas supply pipe and the gas suction pipe are installed alternately up and down. The gas discharge portion in the longitudinal direction of the gas supply pipe, and the gas discharge amount is adjustable through the gas valve.

The atomic layer deposition apparatus according to the present invention can simplify the gas supply and the gas suction structure, thus facilitating the maintenance work.

The atomic layer deposition apparatus according to the present invention can independently control the supply of gas and the suction of gas and can reduce the amount of gas used and increase the throughput while reducing the footprint of the substrate on which the atomic layer is deposited .

However, the effects of the present invention are not limited to the effects mentioned above, and other effects not mentioned can be clearly understood by those skilled in the art from the following description.

1 is a perspective view schematically showing an atomic layer deposition apparatus according to an embodiment of the present invention.
Fig. 2 is a sectional view taken along the cutting line "II-II" in Fig.
3 is a cross-sectional view of a gas supply pipe and a gas suction pipe of an atomic layer deposition apparatus according to an embodiment of the present invention.
4 is a perspective view of a gas supply pipe and a gas suction pipe of an atomic layer deposition apparatus according to an embodiment of the present invention.
5 is a perspective view showing a gas valve applied to a gas supply pipe or a gas suction pipe of an atomic layer deposition apparatus according to an embodiment of the present invention.
FIG. 6 is a view showing a spray shape of a gas supplied from a gas supply pipe of an atomic layer deposition apparatus according to an embodiment of the present invention. FIG.
7 is a cross-sectional view illustrating a first modification of the atomic layer deposition apparatus according to an embodiment of the present invention.
8 is a cross-sectional view illustrating a second modification of the atomic layer deposition apparatus according to an embodiment of the present invention.
9 is a cross-sectional view illustrating a third modification of the atomic layer deposition apparatus according to an embodiment of the present invention.
10 is a cross-sectional view illustrating a fourth modification of the atomic layer deposition apparatus according to an embodiment of the present invention.

Hereinafter, embodiments according to the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to or limited by the embodiments. Like reference symbols in the drawings denote like elements.

FIG. 1 is a perspective view schematically showing an atomic layer deposition apparatus according to an embodiment of the present invention, FIG. 2 is a cross-sectional view taken along line II-II of FIG. 1, and FIG. FIG. 4 is a perspective view of a gas supply pipe and a gas suction pipe of an atomic layer deposition apparatus according to an embodiment of the present invention, and FIG. 5 is a perspective view of an atomic layer deposition apparatus according to an embodiment of the present invention. FIG. 6 is a view showing a spray shape of a gas supplied from a gas supply pipe of an atomic layer deposition apparatus according to an embodiment of the present invention, FIG. 7 is a cross-sectional view of a gas supply pipe of the gas supply pipe, FIG. 8 is a cross-sectional view showing a second modification of the atomic layer deposition apparatus according to the embodiment of the present invention, FIG. 9 is a cross-sectional view of the atomic layer deposition apparatus according to the second embodiment of the present invention, According to one embodiment of the present invention 10 is a cross-sectional view illustrating a fourth modification of the atomic layer deposition apparatus according to an embodiment of the present invention.

Referring to FIGS. 1 to 6, an atomic layer deposition apparatus 100 according to an embodiment of the present invention includes a gas supply passage 133 for supplying a gas, a supply tube A gas supply pipe 130 having a gas discharge portion 132 formed in the supply pipe 131 along the longitudinal direction of the supply pipe 131 so as to communicate with the gas supply passage 133, The gas introduced into the suction pipe body 141 along the longitudinal direction of the suction pipe body (suction pipe body 141) so that the suction pipe body 143 communicates with the suction pipe body 141 and the gas suction passage 143 formed along the longitudinal direction thereof And a gas suction pipe 140 having a suction portion 142.

Here, the gas supply pipe 130 and the gas suction pipe 140 may be formed to be separated from each other in a direction crossing the relative movement direction TD of the substrate 110 with respect to the gas supply pipe 130 and the gas suction pipe 140 .

The gas supply pipe 130 and the gas suction pipe 140 of the atomic layer deposition apparatus 100 according to an embodiment of the present invention are all formed into a pipe shape or a pipe shape and have a relative motion direction TD with respect to the substrate 110. [ As shown in Fig. At this time, it is preferable that the gas supply pipe 130 and the gas suction pipe 140 are disposed in a direction orthogonal to the direction of relative motion TD relative to the substrate 110.

By separating the gas supply pipe 130 and the gas suction pipe 140 as described above, it is possible to easily realize the structure of the pipe (or pipe) for supplying or sucking various gases used in the atomic layer deposition process And the throughput can be improved.

The atomic layer deposition apparatus 100 may include a gas supply pipe 130 and a gas suction pipe 140 which are alternately arranged in plural numbers along the direction of relative motion TD relative to the substrate 110. For example, as in the case of FIG. 1, a plurality of gas supply pipes 130 and gas suction pipes 140 may be alternately arranged from the left side. Here, the gas supply pipe 130 injects a source gas or a reactant gas, and the gas suction pipe 140 sucks residual source gas or reactive gas after the reaction.

1, the source gas supply pipe 130, the gas suction pipe 140, the reaction gas supply pipe 130, the gas suction pipe 140, and the source gas supply pipe 130 may be disposed in order from left to right. Here, the source gas supply pipe 130 is positioned at the leftmost and rightmost positions so that the source gas can be injected before the reaction gas when the substrate 110 is moved relative to the gas supply pipe 130 and the gas suction pipe 140 . That is, the substrate 110 can be relatively moved in both directions relative to the gas supply pipe 130 and the gas suction pipe 140 along the relative movement direction TD of the substrate 110, The source gas supply pipe 130 may be disposed at the leftmost and rightmost sides so that the source gas may be injected before the reactive gas.

1, when the substrate 110 moves to the right with respect to the gas supply pipe 130 and the gas suction pipe 140, the source gas supply pipe 130, the gas suction pipe 140, the reaction gas supply pipe 130 And the gas suction pipe 140 are in turn to participate in the reaction, and the source gas supply pipe 130 at the far left does not participate in the reaction. In contrast, when the substrate 110 moves to the left, the source gas supply pipe 130, the gas suction pipe 140, the reaction gas supply pipe 130 and the gas suction pipe 140, The source gas supply pipe 130 on the right side does not participate in the reaction.

In this manner, one atomic layer processing unit including two gas supply pipes 130 and two gas suction pipes 140 can be formed, and two gas supply pipes 130 and two gas suction pipes 140 can be used To perform one cycle. At this time, since more gas supply pipes 130 and gas suction pipes 140 are required to perform a plurality of cycles, a larger work space may be required.

The atomic layer deposition apparatus 100 according to the present invention can relatively move the substrate 110 in both directions relative to the gas supply pipe 130 and the gas suction pipe 140 so that even when processing a substrate having a large area, Is not required. In addition, since the foot print can be shortened by shortening the relative movement distance of the substrate 110 per processing unit, the large area substrate can be easily processed.

On the other hand, when two or more processing units are formed, it is preferable that the gas supply pipe 130 or the gas suction pipe 140 at the same position in each processing unit operate simultaneously.

A substrate temperature variable portion 120 may be provided under the substrate 110. The substrate temperature variable unit 120 may increase or decrease the temperature of the substrate portion to which the source gas is supplied. Since the temperature of the entire substrate 110 is not varied, but only the temperature of the substrate is varied, Thermal degradation, life span reduction, physical deformation, etc., which can be regarded as an incidental problem, can be prevented. The substrate temperature variable portion 120 may have a shape such as a heater or a cooling pad.

Referring to FIG. 2, a predetermined gap G is maintained between the line passing through the center of the gas supply pipe 130 and the upper surface of the substrate 110, and the gap G may not exceed 20 mm. When the gap G is smaller than 20 mm, the gas discharge portion 132 of the gas supply pipe 130 and the upper surface of the substrate 110 are in contact with each other or too close to each other, And if it is larger than 20 mm, the gas supply efficiency may be lowered.

When the gas supply pipe 130 has a circular pipe shape and the gas suction pipe 140 has a suction guide 144 protruding from the circular pipe shape toward the substrate 110, The imaginary line BL connecting the lowermost end of the gas suction pipe 140, that is, the lowermost end of the suction guide 144, is preferably parallel to the substrate 110. Thus, the lower end of the suction guide 144 and the lower end of the gas discharge portion 132 can be provided at the same height.

3, the gas supply pipe 130 includes a supply tube 131 formed in a cylindrical shape along the longitudinal direction and a gas supply passage 133 formed therein, and a source gas 133 flowing along the gas supply passage 133 A part of the supply tube 131 may communicate with the outside to form the gas discharge part 132 so that the reaction gas can be discharged to the outside.

The gas discharge unit 132 may include a plurality of discharge holes 132a or slits 132b formed along the longitudinal direction of the supply pipe body. 4, the gas discharging unit 132 includes a plurality of discharge holes 132a formed in the supply tube 131 along a direction orthogonal to the relative movement direction TD of the substrate 110, As shown in FIG.

The discharge hole 132a or the slot 132b forming the gas discharge portion 132 should be formed so as to face the substrate 110. [

4 (a) is a view showing the gas supply pipe 130 such that the discharge hole 132a formed in the supply pipe 131 is seen upward. When the gas discharge portion 132 is formed as the discharge hole 132a, the discharge holes 132a may be formed at the same interval or the same size, but the center portion of the supply tube 131 It is preferable that the discharge hole 132a in the discharge tube 131 is formed larger than the discharge hole 132a in the both end sides of the supply tube 131. [

The source gas or the reactive gas is supplied from both ends of the supply tube 131 toward the middle portion, and the supply pressure of the gas is lowered at the center than both ends of the supply tube 131. If the size of the discharge hole 132a is kept the same in a state where the supply pressure is low in the middle part of the supply tube 131, the discharge pressure of the gas passing through the discharge hole 132a in the middle part of the supply tube 132 or The emission amount is reduced, which results in lowering the uniformity of the deposition. The atomic layer deposition apparatus 100 according to an embodiment of the present invention can prevent the above problems by forming the size of the discharge hole 132a in the center of the supply tube 131 to increase the uniformity of deposition .

The gap between the discharge holes 132a in the middle portion of the supply tube 131 among the plurality of discharge holes 132a is formed to be smaller than the gap between the discharge holes 132a on both end sides of the supply tube 131 . The gap between the discharge holes 132a in the center of the supply tube 131 is formed to be finer than both ends so that the discharge pressure or discharge amount of the discharge gas in the middle portion of the supply tube 131 can be prevented from being reduced.

4B shows a case where the gas discharge part 132 of the gas supply pipe 130 has the shape of the slit 132b. Like the case where the gas discharge part 132 is formed by the discharge hole 132a, Both ends of the supply tube 131 may be formed smaller than the center portion of the supply tube 131. The width of the slit 132b formed in the center of the supply tube 131 is made larger than both ends so that the discharge pressure or discharge amount of the gas discharged through the slit 132b in the middle portion of the supply tube 131 is prevented from being reduced, The uniformity of the deposition can be maintained or improved.

3, the discharge hole 132a or the slit 132b forming the gas discharge part 132 may have a shape enlarged toward the outside of the supply tube 131. In addition, as shown in FIG. That is, the discharge hole 132a or the slit 132b may be formed to be enlarged toward the surface of the substrate 110. [

3 (a), the cross-section of the gas discharging unit 132 may have a shape enlarged toward the substrate 110. [ Since the gas discharging portion 132 is formed to have the enlarging angle [theta] 1, the portion 115 where the source gas or the reactive gas to be injected overlaps can be formed, as shown in Fig. The presence of the portion 115 where the gas is superimposed can prevent the source gas or the portion of the reaction gas not contacting the substrate 110 from occurring.

The angle? 1 of the gas discharge portion 132 is related to the gap G between the gas discharge portion 132 and the substrate 110. That is, the larger the angle? 1 of the gas discharging portion 132, the smaller the gap G between the gas discharging portion 132 and the substrate 110 should be. The larger the angle? 1 of the gas discharging portion 132 is, the more the gas overlap portion 115 is formed but the gas flowing toward the gas suction pipe 140 can be increased. The gap G between the gas discharging portion 132 and the substrate 110 must be reduced to reduce the gas flowing toward the gas suction pipe 140 as much as possible. It is preferable that the gap G between the gas discharging portion 132 and the substrate 110 is reduced by about 1/2 to 2/3 if the angle? 1 of the gas discharging portion 132 is increased to about two times.

When the gas discharging portion 132 has the shape of the discharging hole 132a, the gap between the discharging holes 132a is also influenced by the size of the angle? 1 of the gas discharging portion 132 to the discharging hole 132a . It is preferable to increase the distance between the discharge holes 132a as the angle? 1 between the gas discharge portion 132 and the discharge hole 132a increases. Since the outer diameter of the discharge hole 132a formed on the outer surface of the supply tube 131 is large as the angle? 1 of the gas discharge portion 132 to the discharge hole 132a is larger, the gap between the discharge holes 132a is increased So that the pressure of the gas in the tubular body 131 is sufficiently maintained. If the angle [theta] 1 of the gas discharge portion 132 is increased by about two times, the interval between the discharge holes 132a is preferably set to be about 1.5 to 2 times larger.

3 (b), the gas suction pipe 140 includes a suction guide 144 extending to the outside of the suction pipe body 141, that is, the gas suction part 142 toward the substrate 110, The suction guide 144 may have a shape that is enlarged toward the outside of the suction pipe body 141 or the surface of the substrate 110.

The suction guide 144 may extend from the gas suction portion 142 toward the surface of the substrate 110 by a predetermined length H. [ The extension length H of the suction guide 144 can be selected in consideration of the gas suction efficiency.

At this time, as the angle? 2 of the suction guide 144 is larger than the angle? 1 of the discharge hole 132a, the lower end of the suction guide 144 and the lower end of the substrate 110 ) Is preferably small. In the case where the gas suction portion 142 is formed in the shape of a suction hole (not shown), it is preferable that the interval between the suction holes (not shown) is made larger as the angle? 2 of the suction guide 144 is larger.

Similar to the gas supply pipe 130, the gas suction portion 142 of the gas suction pipe 140 may have a single slit or multiple suction holes. At this time, the width of the slit or the size / interval of the suction holes can be designed in consideration of the suction pressure. That is, the width of the slit or the size / interval of the suction hole can be determined so as to maintain the same suction pressure over the entire length of the suction pipe body 141 of the gas suction pipe 140.

The gas supply pipe 130 should be capable of regulating the discharge amount of the source gas or the reactive gas or controlling the discharge. For example, when a certain amount of the source gas or the reaction gas is discharged, the discharge of the source gas / reaction gas must be stopped. In the case of the gas supply pipe 130 shown in FIGS. 3 and 4, since the gas discharge portion 132 is always open, the discharge amount or the flow rate of the gas can not be controlled in the gas discharge portion 132, The supply of gas to the gas supply line (not shown) connected to the supply pipe 130 is restricted. In order to solve this problem, the atomic layer deposition apparatus 100 according to the present invention is configured such that the gas supply pipe 130 is rotatably provided on the inner surface of the supply pipe 131, as shown in Fig. 5 (a) And a gas valve 190 for connecting or disconnecting the gas supply passage 133 and the gas discharge portion 132.

The gas valve 190 needs to have the same curvature as the inner surface of the supply tube 131 and has a shape that contacts the inner surface of the supply tube 131 because the gas valve 190 must be rotatable inside the supply tube 131. At this time, the gas valve 190 need not be in the form of a complete tube, that is, a cylinder or a pipe, and any shape is possible as long as it can turn on / off the gas discharging part 132. For example, it may have an arc-shaped bar shape contacting the inner surface of the supply tube 131.

The gas valve 190 may include an opening 192 formed along the longitudinal direction of the gas supply pipe 130 if the gas valve 190 is formed in a cylindrical shape. 5 (c), the open portion 192 of the gas valve 190 is shown as a single slot, but it is not necessarily limited to this form. The opening portion 192 of the gas valve 190 may be formed in the shape of a discharge hole 132a or a slit 132b in the same manner as the gas discharge portion 132 of the gas supply pipe 130. [

Meanwhile, the gas valve 190 may be formed not only in the gas supply pipe 130, but also in the gas suction pipe 140 as shown in FIG. 5 (b). By providing the rotatable gas valve 190 in the suction passage 142 of the gas suction pipe 140, the gas suction operation can be controlled.

And a stepping motor (not shown) for rotating the gas valve 190. The amount of opening / closing of the gas discharge portion 132 or the gas suction portion 142 by the gas valve 190 can be precisely controlled because the stepping motor can precisely control the rotation angle. The gas discharge portion 132 or a part of the gas suction portion 142 can be shielded depending on the operation mode of the gas valve 190 so that the flow rate of the discharged or inhaled gas can also be adjusted.

As described above, the gas supply pipe 130 of the atomic layer deposition apparatus 100 according to an embodiment of the present invention includes a source gas supply pipe for supplying a source gas and a reaction gas supply pipe for supplying a reaction gas, The gas suction pipe 140 is disposed between the source gas supply pipe for supplying the source gas and the reaction gas supply pipe for supplying the reaction gas and has a direction of relative movement of the substrate 110 with respect to the gas supply pipe 130 and the gas suction pipe 140 The source gas supply pipe 130 and the gas suction pipe 140 may be arranged symmetrically along the relative movement direction TD of the substrate 110. In this case,

Here, the interval between the adjacent gas supply pipe 130 or the gas suction pipe 140 can be adjusted in consideration of the time required for each reaction process step.

The gas supply pipe 130 and the gas suction pipe 140 may perform a reaction process while relatively moving with the substrate 110. For example, the substrate 110 is moved from right to left, and the gas supply pipe 130 and the gas suction pipe 140 are fixed, supply / suction of the source gas and supply / suction of the reaction gas can be performed .

Alternatively, the gas supply pipe 130 and the gas suction pipe 140 may be moved while the substrate 110 is fixed, and supply / suction of the source gas and supply / suction of the reaction gas may be performed. Further, the gas supply pipe 130 and the gas suction pipe 140 and the substrate 110 may move in opposite directions, or the movement in the opposite direction may be reciprocated. The effect of shortening the distance can be expected when the substrate 110 and the gas supply pipe 130 / the gas suction pipe 140 are simultaneously moved.

7, the gas supply pipe 130 includes a purge gas supply pipe 136 for supplying a purge gas, and a purge gas supply pipe 136 for supplying purge gas supplies a source gas or a reactive gas The gas supply pipe 130 and the gas suction pipe 140 are connected to each other. That is, a purge gas supply pipe 136 may be provided between the gas suction pipe 140 and the reaction gas supply pipe 130. At this time, the purge gas supply pipe 136 may have the same shape as the source / reaction gas supply pipe 130, or may have a gas valve therein.

In the case of the atomic layer deposition apparatus 100 shown in FIG. 7, a source gas is supplied from the source gas supply pipe 130 onto the substrate 110, and the remaining source gas after the reaction is sucked through the gas suction pipe 140 do. Then, a purge gas is supplied from the purge gas supply pipe 136 onto the substrate 110. Thereafter, the reaction gas is supplied from the reaction gas supply pipe 130 onto the substrate 110, and then purge gas is supplied onto the substrate 110 from the purge gas supply pipe 136. Finally, the reaction gas remaining after the reaction is sucked and removed through the gas suction pipe 140. An atomic layer is deposited on the surface of the substrate 110 through this process.

For example, in order to deposit a silicon thin film, the source gas may be any one of silane (Silane, SiH ₄ ), disilane (Si ₂ H ₆ ), and silicon tetrafluoride (SiF ₄ ) And the reaction gas may be oxygen (O ₂ ) or ozone (O ₃ ) gas. The purge gas may be any one of argon (Ar), nitrogen (N ₂ ), helium (He), or a mixture of two or more gases. However, the present invention is not limited to this, and the number and types of the source gas, the purge gas, and the reaction gas may be substantially varied.

8 to 10, various modifications of the atomic layer deposition apparatus 100 according to an embodiment of the present invention may include heating units 150, 160, and 170 for heating the surface of the substrate 110. FIG.

The heating units 150, 160, and 170 may be performed on specific portions of the substrate 110 on which the supply and suction of the source gas is performed. More specifically, the heating units 150, 160, and 170 may be disposed to precede the gas supply pipe 130 with respect to the relative movement direction TD of the substrate 110 relative to the gas supply pipe 130 and the gas suction pipe 140. The heating units 150, 160, and 170 can increase the yield of atomic layer deposition by heating a portion of the substrate 110 where the source gas is supplied.

The heating units 150, 160, and 170 may include at least one of the halogen lamps 150 and 160 or the laser 170. Referring to FIG. 8, an atomic layer deposition apparatus 100 in which heating portions are formed of halogen lamps 150 and 160 is shown.

The halogen lamps 150 and 160 may include housings 151 and 161 that surround the heat sources 153 and 163 and heat sources 153 and 163 and a plurality of cooling units 152 and 162 formed inside the housings 151 and 161. The cooling portions 152 and 162 of the halogen lamps 150 and 160 prevent the portions other than the surface of the substrate 110 from being heated so that the temperature of the entire substrate 110 can be prevented from rising.

The halogen lamps 150 and 160 may be disposed in front of the gas supply pipe 130 with respect to the direction of relative motion TD of the substrate 110. [ Heating of the substrate 110 is performed only for a specific portion of the substrate 110 on which supply and suction of the source gas is performed.

8, when the substrate 110 is transported from the left to the right, the halogen lamp 160 on the right side operates to heat the substrate 110 before the source gas is supplied. Next, the source gas is supplied from the source gas supply pipe 130, the source gas is sucked and removed from the gas suction pipe 140, the reaction gas is supplied from the reaction gas supply pipe 130, and the reaction gas is supplied from the gas suction pipe 140 Suction is removed. This process forms a one cycle process. At this time, the halogen lamp 150 on the leftmost side and the gas supply pipe 130 on the leftmost side do not operate.

Conversely, if the substrate 110 is transported from right to left, the halogen lamp 150 on the left operates to heat the substrate 110 before the source gas is supplied. Next, the source gas is supplied from the source gas supply pipe 130, the source gas is sucked and removed from the gas suction pipe 140, the reaction gas is supplied from the reaction gas supply pipe 130, and the reaction gas is supplied from the gas suction pipe 140 Suction is removed. At this time, the halogen lamp 160 on the rightmost side and the gas supply pipe 130 on the rightmost side are not operated.

As shown in FIG. 8, when the halogen lamps 150 and 160 are used, the substrate temperature variable unit 120 formed on the lower surface of the substrate 110 may be formed of a cooling pad. Due to the method of heating the surface of such a substrate, in the case of a polyvalent compound using a plurality of sources, there is an advantage that a temperature suitable for each source can be individually selected and used.

FIG. 9 shows an atomic layer deposition apparatus 100 to which a laser 170 is applied as a heating section. The position of the laser 170 is a point ahead of the gas supply pipe 130 with respect to the relative movement direction TD of the substrate 110. [

The heating units 150, 160, and 170 may be a halogen lamp, an ultraviolet lamp, or a laser. However, the present invention is not limited thereto, and any device capable of heating the surface of the substrate 110 is possible.

The gas supply pipe 130 and the gas suction pipe 140 of the atomic layer deposition apparatus 100 according to an embodiment of the present invention can supply and suck gas at normal pressure, respectively. Supply / suction of the source gas, supply / suction of the purge gas, and supply / suction of the reaction gas may be performed on the substrate 110 at normal pressure. Since the gas supply / suction process is performed at the same time, the vacuum process is not necessary, so that the reaction process can be performed at normal pressure. If a separate chamber (not shown) for accommodating the gas supply pipe 130 and the gas suction pipe 140 is provided, the reaction process may be performed in a vacuum state.

The atomic layer deposition apparatus 100 shown in FIG. 10 includes an atmospheric pressure plasma generating unit 180 for heating the surface of the substrate 110. The atmospheric pressure plasma generating unit 180 includes a gas supply pipe 130 and a gas May be disposed to precede the gas supply pipe 130 with respect to the direction of relative movement of the substrate relative to the suction pipe 140 or may be disposed between the gas suction pipe 140 and the gas suction pipe 140. [

Since the atomic layer deposition apparatus 100 according to an embodiment of the present invention can deposit an atomic layer at normal pressure, the atmospheric plasma generating unit 180 can be used when the reactive gas is supplied onto the substrate 110. The atmospheric-pressure plasma generator 180 is formed by forming a cold plasma torch. Since the atmospheric pressure plasma generator 180 supplies the reaction gas, the reaction gas supply pipe can be omitted when the atmospheric plasma generator 180 is used.

10, if the substrate 110 is transferred from the left side to the right side, the source gas is supplied from the source gas supply pipe 130 at the far right side to the substrate 110, and then the source gas is supplied from the gas suction pipe 140 The residual source gas is sucked and removed. Subsequently, an atmospheric pressure plasma is generated in the atmospheric pressure plasma generating section 180 and is supplied to the substrate 110. Subsequently, the atmospheric plasma is sucked and removed from the gas suction pipe 140. Through this process, a one-cycle atomic layer deposition process is performed. At this time, the small gas supply pipe 130 at the leftmost end does not operate.

In the case where the substrate 110 is transferred from the right side to the left side, the process is performed in the reverse process, and the source gas supply pipe 130 at the rightmost side is not operated.

However, the installation positions of the heating units 150, 160, and 170 and the atmospheric plasma generating unit 180 such as a halogen lamp, a laser, or an ultraviolet lamp are not limited and may be selected according to the purpose of the process.

As described above, the atomic layer deposition apparatus according to an embodiment of the present invention can reduce the gas consumption amount by separating the gas supply pipe for supplying the source gas or the reactive gas and the gas suction pipe for sucking and removing the residual gas, It is possible not only to reduce the footprint of the substrate on which the layer is deposited, but also to simplify the mechanical construction for implementing the supply and suction operation of the gas.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. Accordingly, the spirit of the present invention should not be construed as being limited to the embodiments described, and all of the equivalents or equivalents of the claims, as well as the following claims, belong to the scope of the present invention .

100: atomic layer deposition apparatus 110: substrate
120: substrate temperature variable part 130: gas supply pipe
131: supply pipe 132: gas discharge portion
133: gas supply passage 140: gas suction pipe
141: suction pipe body 142: gas suction pipe
143: Gas suction channel 144: Suction guide
150,160: Halogen Lamp 170: Laser
180: Atmospheric pressure plasma generator 190: Gas valve

Claims (15)

A gas supply pipe having a supply tube formed inside the gas supply passage for supplying gas along its longitudinal direction and a gas discharge portion formed in the supply tube along the longitudinal direction of the supply tube so as to communicate with the gas supply passage; And
And a gas suction pipe formed in the suction pipe body along a longitudinal direction of the suction pipe body so as to communicate with the gas suction pipe, wherein the gas suction pipe includes a suction pipe body,
Wherein the gas supply pipe and the gas suction pipe are separated from each other in a direction crossing the direction of relative movement of the substrate with respect to the gas supply pipe and the gas suction pipe.
The method according to claim 1,
Wherein the gas discharge portion includes a plurality of discharge holes or slits formed along the longitudinal direction of the supply pipe body.
3. The method of claim 2,
And an exhaust hole in a middle portion of the supply tube among the plurality of exhaust holes is formed to be larger than an exhaust hole at both end sides of the supply tube.
3. The method of claim 2,
Wherein an interval between the discharge holes in the central portion of the supply pipe among the plurality of discharge holes is formed to be smaller than an interval between the discharge holes at both end sides of the supply pipe.
3. The method of claim 2,
Wherein the width of the slit is formed to be smaller at both ends of the supply pipe than at the center of the supply pipe.
3. The method of claim 2,
Wherein the discharge hole or the slit has a shape enlarged toward the outside of the supply tube body.
3. The method of claim 2,
Wherein the gas suction pipe includes a suction guide extending toward the outside of the suction pipe body to the gas suction part, and the suction guide has a shape enlarged toward the outside of the suction pipe body.
8. The method of claim 7,
Wherein a lower end of the suction guide and a lower end of the gas discharge portion are provided at the same height.
9. The method according to any one of claims 1 to 8,
Wherein the gas supply pipe includes a gas valve rotatably provided on an inner surface of the supply pipe to communicate or block the gas supply passage and the gas discharge portion.
10. The method of claim 9,
Wherein the gas valve includes an opening formed along a longitudinal direction of the gas supply pipe.
9. The method according to any one of claims 1 to 8,
Wherein the gas supply pipe includes a gas supply pipe for supplying a source gas and a gas supply pipe for supplying a reactive gas,
Wherein the gas suction pipe is disposed between a gas supply pipe for supplying a source gas and a gas supply pipe for supplying a reactive gas,
The gas supply pipe is arranged at the outermost side along the direction of relative movement of the substrate to the gas supply pipe and the gas suction pipe,
Wherein the gas supply pipe and the gas suction pipe are symmetrically disposed along a direction of relative movement of the substrate.
12. The method of claim 11,
Wherein the gas supply pipe includes a gas supply pipe for supplying purge gas, and the gas supply pipe for supplying the purge gas is disposed between the gas supply pipe for supplying the source gas or the reaction gas and the gas suction pipe.
9. The method according to any one of claims 1 to 8,
And a heating section for heating the surface of the substrate, wherein the heating section is disposed to precede the gas supply tube and the gas supply tube with respect to the direction of relative movement of the substrate with respect to the gas suction tube.
9. The method according to any one of claims 1 to 8,
Wherein the atmospheric pressure plasma generating section is arranged to precede the gas supply pipe with respect to the gas supply pipe and the direction of relative movement of the substrate with respect to the gas suction pipe or between the gas suction pipes Lt; RTI ID = 0.0 > atomic layer deposition apparatus.
9. The method according to any one of claims 1 to 8,
Wherein the gas supply pipe and the gas suction pipe supply and suck gas at normal pressure, respectively.

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