TWI583821B - Fast remote plasma atomic layer deposition apparatus - Google Patents

Description

Fast remote plasma atomic layer deposition device

The present invention is directed to a fast remote plasma atomic layer deposition apparatus, and more particularly to a remote remote plasma atomic layer deposition apparatus which utilizes remote plasma deposition formed by spatial division, thereby ensuring a fast throughput.

In the above configuration, when the atomic layer is deposited, since the rapid remote plasma is utilized, the throughput can be increased, and the atomic layer can be easily deposited on a large substrate.

In general, a semiconductor element or a flat panel display device or the like is subjected to various manufacturing processes in the manufacturing process, and a program for depositing a desired film on a substrate such as a wafer or glass is necessary.

In this thin film deposition program, sputtering, CVD (Chemical Vapor Deposition), and atomic layer deposition (ALD: Atomic Layer Deposition) are mainly used.

Among them, the Atomic Layer Deposition method, as a nano-film deposition technique using single-atom chemisorption and desorption, is to supply a chamber in a pulsed form after gradually separating the reactants. A new concept of thin film deposition using chemical adsorption and desorption depending on the surface saturation reaction of the reactants on the substrate Surgery.

Conventional atomic layer deposition techniques require additional means for maintenance and management due to the need for a vacuum state in the deposition process, thereby prolonging the process time and resulting in a low rate of production.

Moreover, since the space for ensuring the vacuum is limited, there is a problem that it is not suitable for the display screen industry which requires a large area and a large size.

Further, according to the conventional atomic layer deposition apparatus, in order to adjust or control the pressure inside the reaction chamber, other means than the source gas and the reaction gas means are required, which has a problem of complicating the apparatus.

Moreover, the conventional remote plasma layer atomic layer deposition technique using a remote plasma layer instead of a reactive gas, because the source gas and the remote plasma layer are reacted on the substrate in a certain order (in chronological order) as time passes. It is a time-sharing type, so it also has the disadvantage of slow delivery.

The present invention provides a fast remote plasma deposition apparatus capable of performing exhaust and aspiration of a source gas in one unit.

The present invention provides a fast remote plasma deposition apparatus that enables a source gas and a remote plasma to react on a substrate by a space division type.

The present invention provides a fast remote plasma deposition apparatus that ensures rapid throughput.

In order to achieve the above object, a rapid remote plasma deposition apparatus according to an embodiment of the present invention includes: a source gas unit that supplies a gas to a substrate; a plasma unit that generates a plasma on the substrate; and a plasma unit to the source gas unit and the plasma a gas suction portion that is provided between the units and that sucks the source gas; the substrate is provided to be movable in a direction intersecting with at least one of the source gas unit, the plasma unit, or the gas suction unit.

The plasma layer unit includes: a plasma generating tube formed in an open state at the lower portion; a plasma electrode supplied to an upper portion of the plasma generating tube; a power supply grid formed at a lower end of the plasma generating tube opening; and an adhesion The shower at the lower part of the above power supply grid.

The upper end of the plasma generating tube may form a gas injection portion formed inside by a gas supply passage for supplying a plasma generating gas.

The lower end of the gas injection portion may be formed toward the power supply gate opening.

A plasma exclusion portion may be formed on the power supply grid and the shower.

The plasma removing portion may be formed in the form of a circular hole or a slit.

The plasma generating portion may form a slit that is perpendicular to the moving direction of the substrate.

The plasma electrode can generate any one of a capacitive plasma, an inductive plasma, or a direct current pulsed plasma.

The source gas unit and the plasma unit described above may be divided according to space Cut formation.

The source gas unit includes a gas supply pipe formed inside the gas supply passage, and a gas exhaust pipe formed inside by the pressure absorbing portion that communicates with the gas supply passage.

The internal volume of the pressure relieving portion may be larger than the internal volume of the gas supply passage.

The gas suction unit and the source gas unit are integrated, and the gas suction unit may include a gas suction pipe that surrounds at least a portion of an outer circumferential surface of the gas exhaust pipe in order to form the gas intake passage therein. The lowermost end of the gas suction pipe may be extended to be lower than the lowermost end of the gas exhaust pipe.

In order to be able to face the source gas unit or the gas suction unit, a vacuum exhaust unit may be formed on one side of the plasma unit.

A purge tube may be formed between the plasma unit and the vacuum evacuation unit.

In order to dispose the source gas unit, the plasma unit, and the gas suction portion therein, a chamber that internally forms a closed reaction space may be included, and the gas suction portion may be in the chamber form.

As described above, the rapid remote plasma atomic layer deposition apparatus according to the present invention can see an effect of improving the production rate, and is also easy to enlarge because it is large, and is therefore also applicable to the field of display screens.

According to the fast remote plasma atomic layer deposition apparatus of the present invention, the basic pressure before or during the deposition process can be easily controlled or The working pressure can be adjusted by discharging the gas remaining after the deposition process to the outside, so that the configuration of the apparatus can be prevented from becoming complicated.

According to the rapid remote plasma atomic layer deposition apparatus of the present invention, the source gas is ejected in the direction of the substrate by the source gas unit having the pressure relieving portion, so that the source gas can be uniformly and uniformly ejected, thereby improving the quality of deposition.

According to the fast remote plasma atomic layer deposition apparatus of the present invention, since the supply of the source gas and the supply of the remote plasma deposit the atomic layer in a spatially divided manner, a rapid throughput can be obtained and the yield can be improved.

However, the effects of the present invention are not limited to the above, and those which are not mentioned or other effects will be clearly understood from the following description.

100‧‧‧fast remote plasma deposition apparatus

110‧‧‧Substrate

120‧‧‧Substrate temperature variable part

130‧‧‧ source gas unit

131‧‧‧ gas supply pipe

132‧‧‧ gas suction pipe

133‧‧‧ gas suction department

134‧‧‧ gas exhaust pipe

135‧‧‧ gas supply channel

136‧‧‧ gas supply nozzle

137‧‧‧ gas exhaust

138‧‧‧ Pressure Relief Department

139‧‧‧Gas suction channel

140‧‧‧plasma unit

141‧‧‧ gas injection department

142‧‧‧ Plasma generating tube

143‧‧‧plasma electrode

144‧‧‧Power grid

145‧‧‧ shower

146, 147‧‧‧ Plasma Discharge Department

150‧‧‧vacuum exhaust

160‧‧‧External Gas Supply Department

169‧‧‧Inhalation gas suction

170‧‧‧Vacuum pumping department

171‧‧‧vacuum tube

172‧‧‧vacuum tube

181‧‧‧RF power supply

182‧‧‧ impedance matching department

183‧‧‧Gate Power Supply Department

300‧‧‧Fast remote plasma atomic layer deposition device

301‧‧ ‧ chamber

330‧‧‧ source gas unit

340‧‧‧plasma unit

350‧‧‧ Vacuum Exhaust Department

370‧‧‧Vacuum pumping department

400‧‧‧Fast remote plasma atomic layer deposition device

401‧‧‧ chamber

402‧‧‧Case Drying Pump

410‧‧‧ chamber

430‧‧‧ source gas unit

440‧‧‧plasma unit

470‧‧‧Vacuum pumping department

500‧‧‧Fast remote plasma atomic layer deposition apparatus

530‧‧‧ source gas unit

540‧‧‧plasma unit

550‧‧‧vacuum exhaust

590‧‧‧Clearing tube

591‧‧‧Clear the ontology

592, 593‧‧‧Clearing

590‧‧‧Clearing tube

587‧‧‧Clear the tube

596‧‧‧Clearance Department

1 is a schematic diagram of a fast remote plasma atomic layer deposition apparatus in accordance with an embodiment of the present invention.

2 is an internal cross-sectional view of the atomic layer deposition apparatus according to FIG. 1.

Fig. 3 is a perspective view showing a source gas unit used in the atomic layer deposition apparatus according to Fig. 1, illustrating a state in which the gas suction portion is integrated with the source gas.

Figure 4 is a cross-sectional view of the source gas unit according to Figure 3 in a lateral direction and a longitudinal direction.

Figure 5 is a perspective view and a transverse view of a plasma cell used in the atomic layer deposition apparatus of Figure 1.

Fig. 6 is a cross-sectional view showing the plasma unit according to Fig. 5 and a power supply unit connected thereto.

Fig. 7 is a plan view showing the electrode form of the plasma unit according to Fig. 5.

8 to 11 are schematic diagrams showing a modification of the fast remote plasma atomic layer deposition apparatus according to the present invention.

Hereinafter, embodiments according to the present invention will be described in detail with reference to the attached drawings. However, the invention is not limited or limited to the embodiment. The same reference symbols are used in the drawings to represent the same parts.

1 is a schematic view of a rapid remote plasma atomic layer deposition apparatus according to an embodiment of the present invention; FIG. 2 is an internal sectional view of the atomic layer deposition apparatus according to FIG. 1; An oblique view of the source gas unit used in the atomic layer deposition apparatus, showing a form in which the gas suction portion is integrated with the source gas; FIG. 4 is a cross-sectional view of the source gas unit according to FIG. 3 in a lateral direction and a longitudinal direction; Is a perspective view and a transverse view of the plasma unit used in the atomic layer deposition apparatus of FIG. 1; FIG. 6 is a cross-sectional view of the plasma unit according to FIG. 5 and a power supply unit connected thereto; FIG. A plan view of an electrode form of the plasma unit according to Fig. 5; and Figs. 8 to 11 are schematic views of a modification of the fast remote plasma atomic layer deposition apparatus according to the present invention.

Referring to FIGS. 1 through 7, a rapid remote plasma deposition apparatus (100) according to an embodiment of the present invention includes: a source gas unit (130) that supplies a gas to a substrate (110); and a plasma generated on the substrate (110). a plasma unit (140), and a gas suction portion provided between the source gas unit (130) and the plasma unit (140) for drawing in the source gas; The substrate (110) is movable relative to a direction intersecting at least one of the source gas unit (130), the plasma unit (140), or the gas suction portion.

According to the above configuration, at the time of atomic layer deposition, since the rapid remote plasma is utilized, the amount of transport can be increased and the atomic layer can be easily deposited on a large substrate.

According to the fast remote plasma deposition apparatus (100) according to an embodiment of the present invention, since the atomic layer deposition substrate (110) can move relative to the source gas unit (130) and the plasma unit (140), the substrate (110) The size or length of the case, that is, the case of a large substrate, the atomic layer can also be deposited. At this time, if only the plasma unit (140) is arranged on both sides of the source gas unit (130), the large substrate can be processed. That is, the atomic layer deposition apparatus (100) according to an embodiment of the present invention can also create conditions for atomic layer deposition under the lowest configuration of only the source gas unit (130) and the plasma unit (140).

According to Fig. 1, there are one source gas unit (130), two plasma units (140), and two vacuum exhaust units (150). Here, the number of the source gas unit (130), the plasma unit (140), and the vacuum exhaust unit (150) can be expanded. Moreover, only one cycle of the atomic layer deposition process can be completed by arranging the minimum of the plasma unit (140), the source gas unit (130) and the plasma unit (140), but such an arrangement can be performed according to the engineering. Various requirements are imposed on the requirements, output rate, and delivery amount.

A fast remote plasma deposition apparatus (100) according to an embodiment of the present invention may include a source gas unit (130) that supplies source gas to a surface of a substrate (110). Can be arranged on one side or both sides of the source gas unit (130) level Plasma unit (140). The substrate (110) can move along the intersecting direction (TD) of the source gas unit (130) or the plasma unit (140), and the source gas unit (130) or the plasma unit (140) can also move.

That is, the provided substrate (110) is capable of relative movement in a direction (TD) that intersects the level direction of at least one of the source gas unit (130) or the plasma unit (140). According to the same configuration, the throughput of the atomic layer deposition process can be improved.

An atomic layer deposition apparatus (100) according to an embodiment of the present invention includes at least one source gas unit (130) for injection on an atomic layer deposition on or above the substrate (110). Or suction source gas (Source Gas).

The term "injection" here means the purpose of spraying or blowing the source gas onto the surface of the substrate (110). "Pumping" is independent of the reaction, and refers to the absorption of the residual source gas from the surface of the substrate (110) (suction ) meaning after the discharge.

The source gas unit (130) or the plasma unit (140) may be transferred in a fixed state, or the source gas unit (130) or the plasma unit may be in a state where the substrate (110) is fixed. (140) may be transferred, and the substrate (110) may be transferred together with the source gas unit (130) or the plasma unit (140). In the case where the substrate (110) is transferred together with the source gas unit (130) or the plasma unit (140), it can be moved in the opposite direction. Therefore, in any case, the substrate (110) and the source gas unit (130) or the plasma unit (140) can be moved in opposite directions, and the relative motion direction (TD) is in FIGS. 1 and 2 Expressed.

Source gas sheet for atomic layer deposition apparatus (100) according to the present invention The element (130) or the plasma unit (140), since the substrate (100) can be moved in two directions, does not require a large working space when processing a large-area substrate. Further, if the relative movement distance of the source gas unit (130) or the substrate (110) of the plasma unit (140) is shortened, since a foot print can be shortened, a large-area substrate can be easily handled.

A substrate temperature variable portion (120) may be provided at a lower portion of the substrate (110). The substrate temperature variable portion (120) can increase or decrease the temperature of the substrate portion where the first gas (source gas) is supplied, because the entire temperature of the substrate (110) is not changed, but only a part of the temperature of the substrate It is changed so that a series of so-called additional problems caused by temperature changes, such as thermal diffusion, reduced life, and deformation in the house, can be prevented. The substrate temperature variable portion (120) may be provided with a heater or a cooling pad.

The relative movement directions (TD) of the source gas unit (130) or the plasma unit (140) of the atomic layer deposition apparatus (100) according to an embodiment of the present invention are preferably the same or arranged at a certain interval. However, this separation distance is adjusted in consideration of the time required for each reaction step.

The source gas unit (130) or the lowermost end portion of the plasma unit (140) preferably maintains a certain distance (G) from the surface of the substrate (110). More specifically, the source gas unit (130) or the lowermost end of the plasma unit (140) must maintain a certain distance (G) from the surface of the substrate (110). The above spacing (G) is preferably not more than 20 mm. However, the pitch (G) is not limited to 20 mm, and may be determined in consideration of overlap of plasma.

The source gas unit (130) includes: a source gas passage (135) for supplying source gas A gas supply pipe (131) formed inside and a gas exhaust pipe (134) formed inside the pressure relieving portion (138) communicating with the gas supply passage (135).

The gas suction portion is discharged after the source gas is exhausted regardless of the reaction, and the source gas unit (130) and the gas suction portion may be separately formed or integrated.

The atomic layer deposition apparatus (100) illustrated in FIGS. 1 to 4 is a case where the source gas unit (130) is integrated with the gas suction portion. The gas suction portion is integrated with the source gas unit (130), and the gas suction portion may include a gas suction around at least a portion of the outer peripheral surface of the gas exhaust pipe in order to form the gas intake passage (139) therein. Trachea (132). Further, the gas suction portion may be formed to surround the gas exhaust pipe (134), and may include a gas suction portion (132) integrated with the source gas unit (130).

In the case of integration, since the source gas is exhausted and inhaled by a source gas unit (130), it is not necessary to additionally have a tool for discharging or absorbing the source gas, and the atomic layer deposition process can be improved. Throughput.

The gas supply pipe through which the source gas supplied from the external gas supply unit (160) passes is opposite to the externally protruded from the gas suction pipe (132), and the gas exhaust pipe (134) may be in the gas suction pipe (132) The internal formation. As shown in FIG. 2, the gas supply pipe (131) may be formed inside the suction gas absorbing portion (169).

The gas supply pipe (131) can be formed on the opposite side of the gas exhaust pipe (134) based on the gas suction pipe (132).

The gas supply pipe (131) is preferably formed to have a smaller cross-sectional size (diameter or area) than the gas exhaust pipe (134) and the gas suction pipe (132). in Inside the gas supply pipe (131), a gas supply passage (135) communicating in the horizontal direction thereof can be formed. At the uppermost end of the gas supply pipe (131), at least one gas supply port (131a) connected to the gas supply portion (160) can be formed. The gas supply line (161) can communicate with the gas supply passage (135) through the gas supply port (131a).

Since the gas supply of the gas supply pipe (131) can be completed by the gas supply port (131a), both ends of the source gas unit (130) are preferably formed in a closed state.

At least one gas supply nozzle (136) may be formed between the gas supply pipe (131) and the gas exhaust pipe (134) for communicating the gas supply passage (135) and the pressure relieving portion (138). The gas supply passage (135) and the pressure relieving portion (138) are connected by a gas supply nozzle (136).

The gas supply passage (135), the gas supply nozzle (136) and the pressure relieving portion (138) communicate with each other, but do not communicate with the gas intake passage (139). Due to the gas supply passage (135), the gas supply nozzle (136) and the pressure mitigation portion (138) are portions related to gas discharge, and the gas suction passage (139) is a portion related to gas suction. Therefore, the two cannot communicate with each other.

The internal volume of the pressure relieving portion (138) formed may be larger than the internal volume of the gas supply passage (135). The pressure relieving portion (138) is a portion of the passage through which the gas flowing through the gas supply passage (135) and the gas supply nozzle (136) flows, in order to be able to retain the narrow gas supply nozzle well. The gas of (136) has a relatively large volume portion. If the gas is supplied to the nozzle (136) through a narrow gas, the pressure of the gas will increase. The pressure relief (138), which is filled with a relatively large volume or space, will reduce the pressure of the gas. While filling the pressure relief (138), the reduced pressure gas will vent (spray) toward the substrate (110), during which the gas can be removed at a uniform pressure as it passes through the entire length of the source gas unit (130).

First, the gas is collected in the pressure relieving portion (138), and then exhausted through the substrate (11), and the pressure difference between the substrate (110) and the pressure relieving portion (138) is passed through the source gas unit (130). The gas of the entire length is uniformly sprayed.

In other words, the pressure relieving portion (138) is a portion of the passage formed by allowing the gas to be temporarily released and lowering the pressure to allow the gas to be uniformly ejected. The pressure relieving portion (138) may have a cross-sectional structure as long as it has a large profile or a wide profile, and this form is not limited to the form of the jar shown in the drawings.

The gas suction pipe (132) may form at least one gas exhaust port (132a) connected to the vacuum suction portion (170). The gas exhaust port (132a) surrounds the suction gas intake portion (169) to achieve a seal, and the suction gas intake portion (169) is connectable to the vacuum pumping portion (170). The gas exhaust port (132a) formed on the gas suction pipe (132) is a crucible that discharges the source gas to the outside and is connectable to the vacuum pumping portion (170). The gas passing through the gas exhaust port (132a) can be removed by the vacuum pumping portion (170) after being separated from the source gas unit (130) and filled with the suction gas intake portion (169), but depending on the situation, The suction gas suction portion (169) is directly connected to the gas exhaust port (132a) through the suction gas suction portion (169), and the suction gas can be discharged to the outside.

Fig. 4 (b) is a view of the cutting line "A-A" according to Fig. 4 (a). Fig. 4(a) is a longitudinal sectional view of the source gas unit (130).

Referring to Fig. 4(a), a plurality of gas supply nozzles (136) may be formed, but only one gas supply nozzle (136) may be formed.

On the other hand, in the gas exhaust pipe (134), at least one gas exhaust portion (137) can be formed along the longitudinal direction thereof. The gas exhausting portion (137) is an outlet provided to discharge the gas filled in the pressure relieving portion (138) to the outside of the source gas unit (130). Therefore, the gas exhaust unit (137) may have a form in which the outside communicates with the pressure relieving portion (138).

The formation of the gas suction passage (139) can be spatially divided according to the gas supply nozzle (136). As shown in Fig. 4(b), the gas suction passage (139) formed between the gas suction pipe (132) and the gas exhaust pipe (134) can be divided into two spaces according to the gas supply nozzle (136). . At this time, the gas intake passage (139) is preferably symmetrically divided according to the gas supply nozzle (136).

The gas exhaust pipe (134) may include an exhaust guide (137a) that is formed to extend outside the gas exhaust pipe (134) along the gas exhaust portion (137). As shown in FIG. 4, the exhaust guide (137a) is formed to extend under the substrate position to guide the gas passing through the gas exhaust portion (137) to be in maximum contact with the substrate (110).

The exhaust guide (137a) is made to be able to pass through the center of the gas supply nozzle (136), and the symmetry according to the virtual line can be formed on both sides, and the angle between the exhaust guides (137a) formed on both sides is lower. The larger it becomes, the gas that is guided through the exhaust guide (137a) can be diffused and contacted onto the substrate (110).

Here, the gas exhaust portion (137) is included in the exhaust guide (137a) At least one circular hole or slit formed therebetween.

When the gas exhausting portion (137) is formed by a plurality of circular holes, different pressures or differences in the gas exhaust passage (138) due to different positions are preferably rounded in a small pressure portion. The holes become larger or reduce the spacing between the holes. In addition, when the gas exhausting portion (137) forms only a single slit, the magnitude or difference of the pressure in the gas exhaust passage (139) due to the difference in position is preferably changed in the portion where the pressure is small. Big.

A gas suction portion (133) is formed between one end of the gas suction pipe (132) in the circumferential direction and one end of the exhaust gas guide (137a), and the gas suction portion (133) may be located along the gas exhaust pipe (134) or the gas. The circumferential direction of the intake pipe (132) may be symmetrical according to the gas exhaust portion (137).

One end (133a) of the gas intake pipe (132) forming the gas intake portion (133) in the circumferential direction may have a curved pattern toward the exhaust guide (137a).

A gas suction portion (133) is formed between one end of the gas suction pipe (132) in the circumferential direction and one end of the exhaust gas guide (137a), and the gas suction portion (133) may be located along the gas exhaust pipe (134) or the gas. The circumferential direction of the intake pipe (132) may be symmetrical according to the gas exhaust portion (137).

One end (133a) of the gas intake pipe (132) forming the gas intake portion (133) in the circumferential direction may have a curved pattern toward the exhaust guide (137a).

Here, the lowermost end (133a) of the gas suction pipe (132) may be extended to a lower position than the lowermost end (137a) of the gas exhaust pipe (134). The lowermost end (133a) of the gas suction pipe (132) can be extended to a gas exhaust pipe The lower end (137a) of (134) is also a certain distance (t) downward. At this time, the protruding distance (t) is preferably about 3 mm. Similarly, since the lowermost end of the gas suction pipe (132) can be extended to (133a) lower than the lowermost end of the gas exhaust pipe (134), the excluded source gas passes through the source gas unit (130). ) can be inhaled here.

Referring to FIGS. 1 and 2, a vacuum exhaust portion (150) may be formed on one side of the plasma unit (140) so as to be opposed to the source gas unit (130) or the gas suction portion. The vacuum exhaust unit (150) forms a vacuum on the surface of the substrate (110), and is connected to the vacuum tube (171) through the vacuum pumping unit (170).

A plasma unit (140) located between the source gas unit (130) and the vacuum exhaust portion (150) generates a remote plasma and supplies it to the surface of the substrate (110). The plasma unit (140) may include: a plasma generating tube (142) having a lower portion formed in an open state, a plasma electrode (143) provided at an upper portion of the plasma generating tube (142), and a plasma generating tube (142) A power supply gate (144) formed at a lower end of the opening and a shower attached to a lower portion of the power supply gate (144).

Here, the fast remote plasma atomic layer deposition apparatus (100) according to an embodiment of the present invention has a feature that utilizes a form similar to that of the source gas unit (130), that is, using a pipe or a bar shape. The plasma unit (140) deposits an atomic layer.

Referring to FIG. 5, the cross section of the plasma cell (140) is a substantially quadrangular shape because the shape of the plasma electrode (143) limits the cross-sectional shape of the plasma cell (140). The plasma generating tube (142) is A specific space is used to create and fill the plasma (P), generally four-corner tubular, with a horizontal direction perpendicular to the direction of motion (TD) of the substrate (110).

A gas injection portion (141) formed inside the gas supply passage (141a) for supplying a plasma generating gas can be formed at the upper end of the plasma generating tube (142). The gas supplied through the gas injection portion (141) connected to the plasma reaction gas supply unit (not shown) provided separately is supplied to the inside of the plasma generation tube after flowing through the gas supply passage (141a).

Here, the lower end (142a) of the gas injection portion (141) may form an opening toward the power supply gate. The gas injection portion (141) flows into the plasma generating tube (142) through the portion of the opening.

The plasma electrode (143) provided to the tip end of the ion generating tube (142) preferably covers the entire level of the plasma generating tube (142). The plasma electrode (143) is connectable to the impedance matching portion (182) and the RF power source (181). Here, the RF power source (181) is preferably supplied with an AC power source having a frequency of 13.56 MHz.

The plasma electrode (143) can have various forms. That is, as shown in FIG. 7, it can be formed in order to generate any one of plasma plasma (143), capacitive plasma (CCP), inductive plasma (ICP), or DC pulsed plasma. .

Fig. 7(a) illustrates a plasma electrode (143a) and a power source (181a) which generate a volumetric plasma (CCP). The plasma electrode (143a) is similar to the plasma generating tube (142) in that a plasma plasma (143a) and an alternating current power source (181a) having a longer length than the width are used to generate a capacitive plasma.

Fig. 7(a) illustrates a plasma electrode (143a) and a power source (181a) which generate a volumetric plasma (CCP). The plasma electrode (143a) is similar to the plasma generating tube (142) in that a plasma plasma (143a) and an alternating current power source (181a) having a longer length than the width are used to generate a capacitive plasma.

Fig. 7(b) illustrates a plasma electrode (143b) for inducing plasma (ICP). The plasma electrode (143b) is formed by a substantially "ㄈ"-shaped wire electrode, and an inductive plasma can be generated by an alternating current power source (181b) connected to each wire electrode using opposing two-wire wires.

As shown in Fig. 7(c), a DC pulsed plasma can be manufactured by using a quadrangular electrode (143c) and a DC power source (181c) connected thereto.

On the other hand, a power supply gate (144) formed at a lower portion of the opening of the plasma generating tube (142) may be connected to the gate power supply portion (183), and the gate power supply portion (183) may use a DC power supply or RF power light. A shower (145, showerhead) may be formed at a lower portion of the power supply grid (144).

The reaction gas supplied to the inside of the plasma generating unit (142) can be plasma-generated (P) by an electrification reaction outside the plasma electrode (143) and the power source gate (144). After the remote plasma supply substrate (110) manufactured in the same manner as described above, an atomic layer can be formed on the surface of the substrate (11) by reacting with the source gas.

A plasma discharge portion (146, 147) may be formed on the power supply grid (144) and the shower (145). That is, in order to enable plasma to be supplied to the substrate (110), a first plasma discharge can be formed on the power supply gate (144). At the portion (147), a second plasma discharge portion (146) can then be formed on the shower (145). At this time, the 1/2th plasma discharge portions (146, 147) are preferably in communication with each other.

Here, the plasma discharge portion (146, 147) may be formed in the form of a hole or a slit. When the plasma discharge portion (146, 147) is in the shape of a round mouth, the plasma discharge portion (146, 147) must be formed after the lower portion of the entire plasma generation tube (142).

When the plasma discharge portion (146, 147) is in the shape of a slit, the plasma discharge portion (146, 147) may be formed in a direction perpendicularly intersecting the moving direction (TD) of the substrate (11). That is, the plasma discharge portion in the slit form is preferably formed along the level direction of the plasma generation tube (142). If formed along the level of the plasma generating tube (142), a plasma uniformly distributed along the entire area of the substrate (110) can be supplied. That is, the uniformity of the plasma can be provided.

As shown in FIG. 2, a fast remote plasma atomic layer deposition apparatus (100) according to an embodiment of the present invention is a source gas unit (130) that supplies source gas and a plasma unit (140) that provides plasma are separated from each other. The tube or strip shape then forms an atomic layer. Also, the atomic layer deposition apparatus (100) according to an embodiment of the present invention is formed in order to enable the source gas unit (130) and the plasma unit (140) to be spatially divided. That is, the present invention utilizes a remote plasma unit (140) and a source gas unit in a spatially divided form to deposit an atomic layer, and similarly, a remote plasma using a spatially divided form can ensure a rapid transport amount.

Source gas unit (130) shown in Figure 2, source gas exhaust and suction This can be done in one unit (130). The source gas is obtained and discharged from the gas supply portion (160) connected to the source gas unit (130), and then the residual source gas irrelevant to the reaction is taken in and discharged to the outside, and then passed through a vacuum connected to the gas suction pipe (132). The suction portion (170) is discharged. 2 is an example in which the gas suction portion is integrated with the source gas unit (130) in the form of a gas suction pipe (132), wherein the gas suction portion can be formed separately from the source gas unit.

On the other hand, illustrated in FIG. 8 is a rapid remote plasma atomic layer deposition formed by a source gas unit (230), a plasma unit (240), and a vacuum exhaust portion (250) inside the chamber (210). Device (200).

The atomic layer deposition apparatus (200) is connected to the chamber (201), and the interior of the chamber (201) may include a chamber drying pump (202) capable of forming a vacuum. A chamber drying pump (20) is provided external to the chamber (101) and is connectable to the chamber (201) via a suction line (203). At this time, the evacuation tube (203) can be connected to the chamber (201), as shown in Fig. 8, and can also be connected to the position where the substrate (210) is located. In order to be connected to the exhaust pipe (203), the chamber (201) or the lower portion of the substrate (210) may form an exhaust port (204).

The atomic layer deposition apparatus (200) shown in Fig. 8 can vacuum the inside of the chamber (201) by the start of the chamber drying pump (202) before the start of the deposition process; through the chamber drying pump ( 202), the inside of the chamber (201) can be evacuated to a base pressure (about 10-3 torr), and the normal pressure inside the chamber (201) can be maintained.

If the deposition process is started, the chamber drying pump (202) is stopped, and the deposition process is performed by the vacuum suction portion (270) to adjust the working pressure (0.1 to 0.2 torr) inside the chamber (201). In addition, the vacuum pumping unit (370) and The chamber drying pump (202) can be started together to create a pressure difference inside the chamber (201), and the pressure difference can increase the uniformity of the exhaust (spray) gas in the source gas unit (230), and can be done. To even spray.

Without the chamber drying pump (202), the performance of the chamber drying pump (202) can be replaced by the source gas unit (230). That is, the source gas unit (230) can also form a basic pressure or a pressure difference inside the chamber (201) by gas suction (suction) operation.

The source gas unit (230) may be connected to the gas supply portion (260) through a discharge pipe (261), and the vacuum exhaust portion (250) may be connected to the vacuum suction portion (270) through a vacuum discharge pipe (271). At this time, the vacuum discharge pipe (271) may be connected to the vacuum suction portion (279) formed in the upper portion of the chamber (201) in order to communicate with the vacuum exhaust portion (250).

On the other hand, the source gas sucked through the source gas unit (230) can be discharged to the vacuum suction portion (270) by means of a vacuum discharge pipe. The vacuum exhaust pipe (272) may be connected to the intake gas absorbing portion (269) formed in the chamber (201) in order to communicate with the source gas unit (230).

The fast remote plasma atomic layer deposition apparatus (300) illustrated in Figure 9 is the case when the source gas unit (330) has no gas suction performance. After the atomic layer deposition device (300) sucks the source gas, a vacuum exhaust portion (350) may be formed between the source gas unit (330) and the plasma unit (340) in order to discharge the source gas. A vacuum exhaust (350) may also be provided on the other side of the plasma unit (340).

A source gas unit (330), a plasma unit (340) and a vacuum exhaust portion (350) are formed inside the chamber (301), and a portion of the chamber connected to the vacuum pumping portion (370) may be formed. Exhaust enthalpy (301a). The rest of the map The atomic layer deposition apparatus (200) shown in Fig. 8 is the same. The drawing symbol is a 3-digit number, and the drawing symbols in the same part are described as the second digit being the same as the first digit.

In the fast remote plasma atomic layer deposition apparatus (400) illustrated in FIG. 100, the source gas unit (430) is provided with a configuration that only exhaust gas cannot be inhaled. Or, there is no additional vacuum exhaust. Exhaust gas and vacuum suction of the source gas can be accomplished in a chamber (401) and a vacuum pumping section (470) coupled to the chamber (410). Alternatively, it can be accomplished in a chamber drying pump (402) coupled to the chamber.

The source gas irrelevant to the reaction or the discharge of the source gas remaining after the reaction may be completed by the crucible on the chamber (401) in order to correspond to the position between the source gas unit (430) and the plasma unit (440). . In addition, the vacuum exhaust tail corresponds to the other side of the plasma unit (440) and can be completed by a crucible (401a) formed on the chamber (401). It can be connected to the vacuum pumping section (470) at the crucible (401a). The remaining portion is the same as the atomic layer deposition apparatus (300) of the book of Fig. 8.

The fast remote plasma atomic layer deposition apparatus (500) illustrated in FIG. 11 is compared with the atomic layer deposition apparatus (100) illustrated in FIG. 2, between the plasma unit (540) and the vacuum exhaust section (550). There is a difference in the formation of the purge tube (590). The purge tube (590) is similar to the source gas unit (530) in a tubular or strip shape and may include a purge body (591) that forms a purge crucible (592, 593) at each of the lower end and the upper end. The purge tube (590) can be connected to the purge portion (596) by a purge tube (587). The remaining portion is the same as the atomic layer deposition apparatus of FIG.

As described above, similar specificities are explained in an embodiment of the present invention. The present invention is not limited to the above embodiments, but is provided to provide a more complete understanding of the present invention. If there is a person having basic knowledge in the field of the present invention, various revisions and modifications can be made from these materials. Therefore, the inventive concept is not limited to the illustrated embodiments, and the scope of the present invention is not limited to the scope of the present invention.

[commercial use possibility]

The invention is applicable to the fields of manufacture of semiconductors, display screens and the like.

100‧‧‧fast remote plasma deposition apparatus

110‧‧‧Substrate

120‧‧‧Substrate temperature variable part

130‧‧‧ source gas unit

140‧‧‧plasma unit

150‧‧‧vacuum exhaust

TD‧‧‧ cross direction

Claims (16)

A rapid remote plasma atomic layer deposition apparatus comprising: a source gas unit for supplying a gas to a substrate; a plasma unit for generating a plasma on the substrate; and a gas suction portion to the source gas unit and the plasma unit Providing the source gas in between; the substrate provided may be relatively moved in a direction intersecting with at least one of the source gas unit, the plasma unit or the gas suction unit. The fast remote plasma atomic layer deposition apparatus according to claim 1, wherein the plasma unit comprises: a plasma generating tube, the lower portion is formed in an open state; and the plasma electrode is supplied to the plasma generating tube. An upper portion; a power grid formed at a lower end of the plasma generating tube opening; and a shower attached to a lower portion of the power supply grid. The rapid remote plasma atomic layer deposition apparatus according to claim 2, wherein a gas injection portion is formed inside the upper end of the plasma generating tube to form a gas supply path for supplying a plasma generating gas. The rapid remote plasma atomic layer deposition apparatus according to claim 3, wherein the lower end of the gas portion is formed toward the power source gate opening. Fast remote plasma atomic layer deposition as described in claim 3 The device includes a plasma removal portion formed on the power supply grid and the shower. The rapid remote plasma atomic layer deposition apparatus according to claim 5, wherein the plasma removing portion is formed in a form of a circular hole or a slit. The rapid remote plasma atomic layer deposition apparatus according to claim 6, wherein the plasma generating portion can form a slit perpendicular to a moving direction of the substrate. The rapid remote plasma atomic layer deposition apparatus according to claim 2, wherein the plasma electrode can generate any one of a capacitive plasma, an inductive plasma, or a direct current pulsed plasma. The fast remote plasma atomic layer deposition apparatus according to claim 1, wherein the source gas unit and the plasma unit are formed in a space division manner. The rapid remote plasma atomic layer deposition apparatus according to claim 1, wherein the source gas unit comprises: a gas supply pipe formed inside by the gas supply passage; and a pressure connected to the gas supply passage. A gas exhaust pipe formed inside the mitigation portion. The rapid remote plasma atomic layer deposition apparatus according to claim 10, wherein the internal volume of the pressure relieving portion is larger than the internal volume of the gas supply passage. The rapid remote plasma atomic layer deposition apparatus according to claim 11, wherein the gas suction portion and the source gas unit are integrated, and the gas suction portion is formed in the gas suction passage. A gas suction pipe surrounding at least a portion of the outer peripheral surface of the gas exhaust pipe may be included. The fast remote plasma atomic layer deposition apparatus according to claim 12, wherein the lower end of the gas suction pipe is extended to be lower than a lowermost end of the gas exhaust pipe. The fast remote plasma atomic layer deposition apparatus according to claim 10, wherein a vacuum exhaust gas is formed on one side of the plasma unit so as to be opposite to the source gas unit or the gas suction unit. unit. The fast remote plasma atomic layer deposition apparatus according to claim 14, wherein a purge tube is formed between the plasma unit and the vacuum exhaust unit. The fast remote plasma atomic layer deposition apparatus according to claim 10, wherein the source gas unit, the plasma unit, and the gas inhalation portion are disposed inside, and further includes a sealing inside. A chamber of the reaction space, the gas suction portion being formed in the chamber.