KR20050015931A - Chamber and showerhead for uniform layer deposition - Google Patents

Abstract

PURPOSE: A chamber and a showerhead for uniform layer deposition are provided to process uniformly a large-sized substrate by reducing a pressure difference between a center part and a peripheral part of a substrate. CONSTITUTION: A chamber for processing a substrate includes a substrate supporting part(52) for processing a substrate, a plurality of gas injection parts(72) located at an upper part of the substrate supporter, and a plurality of gas exhaust parts(74) located at the upper part of the substrate supporter. The gas exhaust parts are arranged nearly to the gas injection parts. The gas injection parts are arranged between the gas exhaust parts.

Description

Chamber and Shower Head for Uniform Film Deposition {CHAMBER AND SHOWERHEAD FOR UNIFORM LAYER DEPOSITION}

The present invention relates to a chamber and a shower head for processing a large-area substrate, and more particularly, to reduce the pressure difference generated between the center and the periphery of the large-area substrate and to process the entire substrate uniformly at a high speed. It relates to a chamber and a shower head.

Referring to FIG. 1, which is a cross-sectional view schematically showing a conventional chamber, the chamber is blocked from the outside to form a reaction body and a chamber lid 10, and a chamber lid 20 to seal an upper end of the chamber body 10. )

The substrate support part 12 which is movable up and down and supports the substrate P to be processed is installed in the chamber body 10, and the chamber lid 20 is provided with a reaction gas into the chamber body 10. The gas supply pipe 22 which supplies is provided. At one end of the gas supply pipe 22, a shower head 30 having a plurality of gas injection holes 32 formed therein is formed so that the gas g ₁ supplied through the gas supply pipe 22 is uniformly injected onto the substrate P. Is installed. In order to form a plasma between the shower head 30 and the substrate P, the shower head 30 is supplied with power from a power supply device 45 and RF (Radio Frequency) power is applied to the shower head 30, and the substrate support unit One side of 12 is grounded. In addition, the substrate support 12 is provided with a heater (not shown) for heating the inside of the chamber and the seated substrate (P) to adjust the temperature of the substrate (P), the bottom of the chamber body 10 On one side, an exhaust pipe 14 for exhausting residual gas g ₂ after the reaction is formed. The chamber configured as described above sprays the gas g ₁ onto the substrate P placed on the substrate support 12 through the gas injection hole 32 of the shower head 30. When RF power is applied to the shower head 30, plasma is generated in the injected gas. At this time, the plasma is decomposed or activated by the reactive gas to deposit a desired film on the substrate (P). After the reaction is completed as described above, the residual gas (g ₂ ) is exhausted to the exhaust pipe (14).

As the device of such a configuration increases the area of the substrate P to be processed, even if the gas is injected at a uniform pressure, the pressures formed depending on the position of the substrate are different from each other. Typically, the pressure in the center portion A of the substrate is greatest, and then the pressure in the substrate peripheral portion B is small, and the pressure is formed to be the smallest in the vicinity of the gas exhaust pipe 14. Therefore, a nonuniform film is formed in the substrate P due to this pressure difference. In addition, since the gas exhaust pipe 14 is located at the bottom of the chamber, as the gas is injected and the exhaust path is lengthened, residual gas in the lower space of the chamber generates impurities such as residual contaminants and degrades the product quality.

SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems of the prior art, and to provide a chamber and a shower head in which a desired film is uniformly formed even in a large area substrate by maintaining the substrate center and the periphery of the substrate at a uniform pressure. .

It is still another object of the present invention to provide a chamber and a shower head which smoothly exhausts residual gas and suppresses generation of impurities during substrate processing.

In order to achieve the above object, a chamber for processing a substrate includes a substrate support for supporting a substrate to be processed, a plurality of gas injection ports positioned above the substrate support, and a plurality of gas exhaust ports positioned above the substrate support. Include.

In the chamber, the gas exhaust port may be disposed adjacent to the gas injection port, and the gas injection port may be disposed between the gas exhaust ports. In addition, it may include one or more auxiliary exhaust pipe installed on at least part of the side or bottom of the chamber to exhaust the gas in the chamber to the outside. Here, the plurality of auxiliary exhaust pipes may be installed symmetrically on the side or bottom of the chamber. Furthermore, in such a chamber of the present invention, the area occupied per unit area by the gas exhaust port located on the center of the substrate support may be greater than or equal to the area occupied by the gas exhaust port located on the periphery of the substrate support. . In this case, the size of the gas exhaust port located on the center of the substrate support may be greater than or equal to the size of the gas exhaust port located on the periphery of the substrate support. The number per unit area of the gas exhaust port located on the center of the substrate support may be greater than or equal to the number per unit area of the gas exhaust port located on the periphery of the substrate support. In addition, the total area occupied by the gas exhaust port may be greater than or equal to the total area occupied by the gas injection port.

Further, in the chamber of the present invention, the gas injection port and the gas exhaust port may be formed in one or more shower heads installed above the chamber. The shower head includes a plurality of holes formed in the bottom surface, an inner space communicating with the plurality of holes, a plurality of through holes penetrating through the bottom surface and the upper surface opposite thereto, and the inner space communicating with the outside of the chamber. One or more second tubes including at least one first tube and communicating a space between an upper surface of the shower head and an upper wall of the chamber to the outside of the chamber, wherein the shower head is spaced above the bottom and above the upper surface. Space is configured and arranged to communicate only through the plurality of through holes, wherein the first pipe is any one of a gas supply pipe for supplying gas into the chamber and an exhaust pipe for exhausting gas in the chamber, and the second pipe It may be the other of the gas supply pipe and the exhaust pipe. In this case, the first pipe is a gas supply pipe, the injection distribution plate may be formed between the gas supply pipe and the upper surface of the shower head, a plurality of exhaust pipe may be installed around the chamber. In addition, the gas injection port may be located closer to the substrate than the gas exhaust port. In particular, the substrate used in the chamber may be an LCD or an organic EL substrate.

In addition, in the chamber of the present invention, the gas injection hole may be formed in at least one shower head provided on the substrate support, and the gas exhaust port may be formed in at least one of the chamber wall above the shower head. An exhaust distribution plate in which a plurality of exhaust holes are formed may be formed below the gas exhaust port. The gas injection port may be a nozzle of the injector, and the gas exhaust port may be formed in at least one of the chamber walls above the injector. In addition, an exhaust distribution plate having a plurality of exhaust holes may be formed between the gas exhaust port and the injector. A shower head for achieving the above object of the present invention is mounted in a chamber for substrate processing, and includes a plurality of gas injection ports and a plurality of gas exhaust ports in a shower head for a chamber for substrate processing.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Example 1

Figure 2a is a cross-sectional view schematically showing a chamber according to the present invention. The chamber of the present invention shown in FIG. 2A is made up of a chamber body 50 which is blocked from the outside to form a reaction space and a chamber lid 60 which seals an upper end of the chamber body 50. In the chamber body 50, a substrate support part 52 that is movable up and down and supports the substrate P to be processed is installed, and the chamber body 50 is provided on the chamber lid 60, which is an upper wall of the chamber. The gas supply pipe 62 which supplies the reaction gas g ₁ therein is installed. The gas supply pipe 62 is connected to a shower head 70 that injects gas g ₁ to the substrate P or exhausts the gas remaining on the substrate P. The shower head 70 receives power from the power supply 85 to generate radio frequency (RF) power, and one side of the substrate support 12 is grounded. In addition, the substrate support 52 may include a heater (not shown) that heats the inside of the chamber and the seated substrate to adjust the temperature of the substrate. In the shower head 70, a plurality of gas injection holes 72 and a gas exhaust hole 74 positioned above the substrate support 52 are uniformly formed. The shower head 70 configured as described above is sprayed with gas to the upper portion of the substrate P through the gas injection hole 72, and then RF power is applied to the shower head 70. Plasma is generated between the substrate and the substrate P to decompose or activate the injected gas into a reactive gas. The gas decomposed or activated as described above is deposited on the substrate P to form a desired film. On the other hand, the gas (g ₂ ) remaining after the reaction is exhausted to the gas exhaust port 74, it is quickly exhausted to the outside of the chamber body 50 through a plurality of exhaust pipes 76 provided around the chamber. In addition, the gas injection port 72 and the gas exhaust port 74 are arranged adjacent to each other, so that the pressure of the central portion A and the peripheral portion B of the substrate is maintained uniformly. That is, the gas injection port 72 and the gas exhaust port 74 are uniformly formed on the entire lower surface of the shower head 70 so that the gas is sprayed so that the pressure in the central portion A and the peripheral portion B of the substrate is maintained uniformly. Or exhaust.

In the chamber, as shown in FIG. 2B, auxiliary exhaust pipes 77a and 77b may be further formed to quickly exhaust residual gas to the outside. The auxiliary exhaust pipes 77a and 77b may be formed on at least part of the side or bottom of the chamber, and may be provided in plural for uniform and rapid exhaust. In particular, when a plurality of auxiliary exhaust pipes are symmetrically arranged in the chamber, the gas remaining on the substrate can be exhausted evenly, which is more preferable. In addition, the auxiliary exhaust pipes 77a and 77b may be integrated into the exhaust pipe 76 and one outside the chamber. As described above, the residual gas exhausted to the auxiliary exhaust pipes 77a and 77b may be pumped out of the chamber by a pumping means (not shown) together with the residual gas exhausted to the exhaust pipe 76.

The gas injection holes 72 may be disposed between the gas exhaust holes 74. In particular, referring to Figures 3a to 3c showing the bottom of the shower head 70 of the present invention, the plurality of gas exhaust port 74 and the gas injection port 72 is formed in the form of a row, respectively, between the gas injection row There may be arranged in at least one gas exhaust row.

4 and 5 are cross-sectional views taken along the lines IV-IV and VV of FIG. 3A, respectively, to illustrate the configuration of the shower head 70 having a dual structure. The gas injection hole 72 is connected to an inlet pipe 78 passing through the shower head 70 and communicates with the upper space in the chamber. A gas supply pipe 62 is attached to the chamber lid 60, and the gas supplied therefrom is supplied to the gas injection hole 72 through the upper space of the chamber and the inlet pipe 78. That is, the space between the shower head 70 and the chamber lid 60 is used as a space for gas supply. The residual gas g _{2 to} be exhausted after the substrate treatment is sucked into the gas exhaust port 74 and then collected in the internal space 77 of the shower head 70 and exhausted through the exhaust pipe 76 provided on the side of the shower head 70. do. The exhaust pipe 76 is branched and connected in plurality so that the exhaust of the gas can be made quickly and uniformly. In addition, as described above, the plurality of branched exhaust pipes 76 may be gathered into one again, and the residual gas exhausted into the exhaust pipe 76 may be pumped out of the chamber by a pumping means (not shown). .

In this embodiment, the space between the upper surface of the shower head 70 and the chamber lid 60 is used as a space for gas supply, but an additional internal space is formed on the shower head 70. The shower head 70 may be configured independently of the chamber by connecting to the gas supply pipe 62.

6A and 6B show bottom views of a modification of the shower head 70 according to the present embodiment. The shower head 70 configured as described above has a gas exhaust port 74 in which an area occupied per unit area by the gas exhaust port 74 located on the center of the substrate support 52 is located on the periphery of the substrate support 52. Is larger than the area occupied per unit area. More specifically, as illustrated in FIG. 6A, the size of the gas exhaust port 74 positioned on the center of the substrate support 52 is greater than that of the gas exhaust port 74 positioned on the periphery of the substrate support 52. As shown in FIG. 6B, the number per unit area of the gas exhaust port 74 positioned on the center of the substrate support 52 is the number per unit area of the gas exhaust port 74 located on the periphery of the substrate support 52. It may be made in larger numbers.

By making the gas displacement of the central portion larger than the periphery by such a configuration, it is possible to more precisely reduce the conventional pressure deviation phenomenon in which the pressure is increased at the substrate central portion A than the substrate peripheral portion B as described above. In other words, by increasing the gas displacement of the center portion larger than the peripheral portion, a larger negative pressure is generated in the substrate central portion A, thereby further reducing the pressure difference between the substrate central portion A and the peripheral portion B, which is more uniform throughout the substrate. One pressure distribution can be achieved. This may be achieved by adjusting the injection amount according to the position instead of adjusting the displacement amount according to the position, that is, by making the size of the injection hole of the substrate peripheral portion B larger than the size of the injection hole of the substrate central portion A.

Preferably, the total area occupied by the gas exhaust port 74 may be greater than or equal to the total area occupied by the gas injection port 72. For example, when the size of each of the gas exhaust port 74 and the gas injection port 72 is the same, the number of the gas exhaust port 74 is increased, and the number of the gas exhaust port 74 and the gas injection port 72 is increased. If it is the same, it is preferable to make each of the gas exhaust ports 74 larger.

Fig. 7 is a view showing the bottom of another modification of the shower head according to the present embodiment. In the modified example shown in FIG. 7 in consideration of this, the gas injection holes 72 and the gas exhaust ports 74 are formed in different numbers and sizes. That is, the number and size of the gas exhaust ports 74 are larger and larger than the respective gas injection holes 72. In order to arrange | position the gas exhaust port 74 adjacent to the gas injection port 72, and to adjust pressure distribution uniformly over the whole surface of the board | substrate P, it is necessary to make gas exhaust easier. In particular, in this case, after the reaction is made, exhaust of the residual gas is efficiently performed, thereby suppressing the generation of impurities and preventing the reaction with the residual gas when the new gas is introduced. However, even in this case, since the gas must be evenly supplied to the substrate P in order to uniformly process the substrate P, the gas injection holes 72 must be formed in a sufficient number uniformly on the upper portion of the substrate P. to be.

On the other hand, the gas injection port 72 through which the gas is supplied through the upper portion of the chamber and the gas exhaust port 74 through which the gas is exhausted through the side of the chamber can be changed. That is, the gas injection port 72 is configured to receive gas from the side of the chamber through the inner space 77 of the shower head, and the gas exhaust port 72 is provided through the upper space of the shower head 70. The gas supply pipe 62 and the gas exhaust pipe 76 may of course be interchanged with each other. Furthermore, a plurality of the gas supply pipes 62 and the gas exhaust pipes 76 may be symmetrically installed, respectively, to uniformly supply and exhaust the gas and increase their speeds. In addition, the gas injection hole 72 or the gas exhaust port 74 may be deformed into various shapes such as circular, elliptical, square, etc., of course, it is possible to increase the degree of freedom of design.

The above modifications can also be applied to other embodiments described below.

Example 2

In the case of the first embodiment described above, if the gas injection port 72 and the gas exhaust port 74 are located on the same plane, some of the supplied gas is exhausted through the gas exhaust port 74 before the reaction with the substrate P occurs. So that gas can be wasted unnecessarily. Example 2 shown in FIG. 8 is to further reduce the unnecessary waste of the gas, and modified Example 1 to allow the gas supplied to the substrate P to be exhausted after sufficiently reacting with the substrate. That is, as shown in FIG. 8 schematically showing the cross section of the chamber, the gas injection port 72 is located closer to the substrate P than the gas exhaust port 74. That is, the inlet pipe 178 penetrating through the shower head 70 in order to communicate with the upper space of the chamber is formed to protrude longer than the inlet pipe 78 of the first embodiment.

In this way, since the gas injection port 72 is located closer to the substrate P than the gas exhaust port 74, the residual gas or the like is exhausted after the reaction between the substrate P and the supply gas is sufficient, so that the supply gas Can prevent waste. Moreover, since a gas can be sufficiently supplied to the substrate P, a desired film can be formed on the substrate.

Example 3

In order to reduce the pressure difference between the substrate central portion A and the substrate peripheral portion B more precisely, the area occupied per unit area by the gas exhaust port 74 disposed in the substrate central portion A as a modification in the first embodiment described above. To the gas exhaust port 74 disposed at the substrate peripheral portion B (or the gas injection hole disposed at the substrate peripheral portion B has an area occupied per unit area by the gas injection hole 72 disposed at the substrate central portion A). 72) has been proposed. In contrast, the third embodiment proposes a configuration that can supply more gas to the substrate peripheral portion B than the substrate central portion A without changing the size or distribution density of the gas injection port 72 and the gas exhaust port 74. .

That is, as shown in Fig. 9, in the third embodiment, the injection distribution plate 268 is formed between the gas supply pipe 62 and the upper surface of the shower head 70. The injection distribution plate 268 is formed in the center region of the chamber to prevent the gas supplied from the gas supply pipe 62 from being directly supplied to the gas injection port 74 located at the center portion A of the substrate. That is, the gas supplied from the gas supply pipe 62 is first supplied to the gas injection hole 74 positioned at the substrate peripheral portion B, and then to the gas injection hole 74 positioned at the center portion A of the substrate. As described above, when gas is first supplied to the gas injection hole 74 positioned at the substrate peripheral portion B, more gas is supplied to the substrate peripheral portion B than the substrate center portion A, so that a somewhat high pressure is applied to the substrate peripheral portion B. By being applied, the pressure difference between the substrate central portion A and the substrate peripheral portion B is compensated for.

Example 4

Fig. 10A is a sectional view schematically showing the chamber according to Embodiment 4 of the present invention, and Fig. 10B is a bottom view of the shower head mounted in the chamber according to Embodiment 4 of the present invention, seen from below. In the fourth embodiment, unlike the case where the plurality of gas injection holes and the gas exhaust ports are formed in the shower head, the plurality of shower heads 370 are installed on the substrate support. A plurality of gas injection holes 372 are formed in the shower head 370 to inject gas to the substrate. Meanwhile, a plurality of gas exhaust ports 374 are formed in the chamber wall above the shower head 370 (that is, in the chamber lid). In addition, the plurality of gas exhaust ports 374 formed in the chamber lid 60 are connected to the plurality of exhaust pipes 376, respectively, to exhaust the gas to the outside of the chamber. In the chamber configured as described above, the gas supplied from the gas supply pipe 362 is injected through the gas injection hole 372 of the shower head 370 to react with the substrate P, and the reaction gas is generated in the shower head ( Exhaust through the space 375 between 370. To this end, the respective shower heads 370 are arranged to be spaced apart at predetermined intervals so that the reacted gas can be sufficiently exhausted.

In addition, a through hole 379 is further formed in a bottom surface of the shower head 370, and an inlet pipe 378 penetrating through the shower head 370 is connected to the through hole 379. That is, the gas supplied from the gas injection hole 372 of the shower head can be exhausted more smoothly and quickly through not only the space 375 between the shower head 370 but also the through hole 379 of the shower head. have. Accordingly, the reacted gas is exhausted through the space 375 between the shower head and the through hole 379 of the shower head to the gas exhaust port 374 so that the total area of the exhaust gas is increased.

 Example 5

This embodiment 5 is different from the above-described embodiments 1 to 4 in which the gas injection port 72 and the gas exhaust port 74 are formed in the shower head 70, and consist of an injector for gas injection and a gas exhaust port formed in the chamber lid. The chamber is presented.

As shown in Fig. 11, in Embodiment 5, a gas injection port 472, which is a nozzle of the injector, and a plurality of gas exhaust ports 474 (formed in the chamber lid 60) are provided in the chamber wall above the injector. A plurality of branch pipes 479 are formed at one end of the chamber side of the gas supply pipe 462 installed in the chamber lid 60. The injector 473 is uniformly installed in the branch pipe 479, and the gas injection hole 472 is formed as a nozzle of the injector 473. The gas injection holes 472 consisting of nozzles of the injector 473 mounted on the plurality of branch pipes 479 branched from the gas supply pipe 462 may be arranged in a plurality of rows. As described above, the gas supply pipe 462 having the plurality of gas injection holes 472 is provided in the chamber lid 60 so that the gas injection holes 472 are uniformly distributed over the substrate. In addition, the plurality of gas exhaust ports 474 formed in the chamber lid 60 are respectively connected to the plurality of exhaust pipes 476 to thereby exhaust the gas to the outside of the chamber. On the other hand, the electrode 480 is installed on the upper portion of the branch pipe 479 so that RF power is applied.

In this case, the number and arrangement of the branch pipes 479 branched from the gas supply pipe 462 may be variously modified to design the position and number of the gas supply pipe 462 as desired, and the injector (ie, Gas injection port 472 may be positioned. Therefore, the gas supply pipe 462 may be designed as one, not a plurality.

In the chamber of the above configuration, the gas injection holes 472 can be not only more uniformly arranged throughout the substrate, but also located closer to the substrate P than the gas exhaust holes 474, thereby reducing the pressure difference more precisely. Can be. In addition, since the gas injection port 472 and the gas exhaust port 474 can be formed independently in the chamber, the gas injection port 472 and the gas exhaust port 474 are shown in FIGS. 3A to 3C and 6A and 6B and 7. It may be formed in various patterns other than the pattern shown in.

12 and 13 schematically show another modification of the chamber according to Embodiment 5 of the present invention. In the chamber according to the fifth embodiment, as illustrated in FIG. 12, one gas exhaust port 574 is formed at the center of the chamber lid 60, and the gas exhaust port 574 is disposed below the gas exhaust port 574. An exhaust distribution plate 576 may be formed to uniformly exhaust the gas exhausted into the furnace. A plurality of uniformly distributed exhaust holes 577 are formed in the exhaust distribution plate 576 so that the gas exhausted after the reaction with the substrate P is exhausted more uniformly. The gas injection hole may be formed of nozzles of the injector 578 formed in various arrangements in the branch pipe 579 branched from the gas supply pipe 562, as shown in FIG. 13, from the nozzle 572 of the injector. The supplied gas is reacted and then discharged to the gas exhaust port 574 through the exhaust hole 577 of the exhaust distribution plate uniformly throughout the substrate. In particular, as described above, when the size of the exhaust hole on the substrate central portion A is larger than the substrate peripheral portion B, the pressure difference between the substrate central portion A and the substrate peripheral portion B can be more precisely reduced. . As such, the exhaust hole 577 may be formed in various shapes and arrangements. This exhaust distribution plate 576 is also applicable to the other embodiments described above in which a gas exhaust port is formed in the upper wall (chamber lead) of the chamber.

The chamber and / or shower head configured as described above may be used to form a desired film on an LCD substrate, or may be used to form a desired film on a semiconductor substrate such as a wafer, and an organic electroluminescence (EL), which has recently been in the spotlight. It is also possible to be used at the time of manufacture of a board | substrate. In particular, it is especially advantageous when a uniform film is formed on a large area substrate having a large pressure difference over the entire surface of the substrate. In the above-described embodiments of the present invention, the vapor deposition for forming the deposition film on the substrate has been described, but the present invention is not limited thereto and may be applied to other substrate processing processes.

While the chamber according to the present invention has been described with reference to the illustrated drawings as described above, the present invention is not limited to the embodiments and drawings described above, and the general knowledge in the technical field to which the present invention pertains within the scope of the claims. Of course, various modifications and variations can be made by those having the same.

The chamber according to the present invention configured as described above can reduce the pressure difference between the center portion and the periphery of the substrate, thereby uniformly treating the substrate, especially the substrate having a large area. In particular, when applied to a process such as vapor deposition, a desired film of good quality can be deposited uniformly throughout the substrate.

In addition, since the size of the gas exhaust port is made larger than that of the gas injection port, the reacted residual gas is quickly exhausted, so that the generation of impurities is suppressed and a desired substrate processing process can be obtained.

In addition, since the gas exhaust port is disposed adjacent to the gas inlet, it is possible to minimize the lower space of the chamber, thereby reducing unnecessary space and reducing the amount of residual gas, thereby suppressing generation of impurities. In addition, the height of the chamber can be lowered to facilitate movement and installation, and the manufacturing cost can be lowered.

1 is a cross-sectional view schematically showing a conventional chamber.

FIG. 2A is a schematic cross-sectional view of a chamber according to Embodiment 1 of the present invention; FIG.

Fig. 2B is a sectional view schematically showing a modification of the chamber according to the first embodiment of the present invention.

3A-3C show the bottom of the shower head of the present invention;

4 is a sectional view taken along line IV-IV of FIG. 3A;

Fig. 5 is a sectional view taken along the line V-V in Fig. 3A.

6A and 6B show a bottom view of a modification of the shower head according to the first embodiment of the present invention;

Fig. 7 is a view showing the bottom of another modification of the shower head according to the first embodiment of the present invention.

Fig. 8 is a sectional view schematically showing a chamber according to Embodiment 2 of the present invention.

Fig. 9 is a sectional view schematically showing a chamber according to Embodiment 3 of the present invention.

Fig. 10A is a sectional view schematically showing a chamber according to embodiment 4 of the present invention.

Fig. 10B is a bottom view of the shower head mounted in the chamber according to the fourth embodiment of the present invention;

Fig. 11 is a sectional view schematically showing a chamber according to the fifth embodiment of the present invention.

Fig. 12 is a sectional view schematically showing still another modification of the chamber according to the fifth embodiment of the present invention.

Fig. 13 is a bottom view of a gas supply pipe mounted in a chamber according to a fifth embodiment of the present invention, and gas injection holes mounted in a plurality of inflow pipes branched therefrom;

<Explanation of symbols for the main parts of the drawings>

50: chamber body

52: substrate support

60: chamber lead

62: gas supply pipe

70: shower head

72: gas nozzle

74: gas exhaust port

76: exhaust pipe

77: interior space

78 inlet pipe

Claims (28)

A chamber for processing a substrate, A substrate support for supporting a substrate to be processed, A plurality of gas injection holes positioned above the substrate support; And a plurality of gas exhaust ports positioned above the substrate support. The chamber of claim 1, wherein said gas exhaust port is disposed adjacent said gas injection port. The chamber of claim 1, wherein the gas injection port is disposed between the gas exhaust ports. The chamber according to any one of claims 1 to 3, comprising one or more auxiliary exhaust pipes installed on at least part of the side or bottom of the chamber to exhaust the gas in the chamber to the outside. The chamber according to claim 4, wherein a plurality of auxiliary exhaust pipes are symmetrically installed on the side or bottom of the chamber. The area according to any one of claims 1 to 3, wherein an area occupied per unit area by the gas exhaust port located on the center of the substrate support is greater than an area occupied by the gas exhaust port located on the periphery of the substrate support. A chamber characterized by being greater than or equal to. The chamber of claim 6, wherein a size of the gas exhaust port located on the central portion of the substrate support is greater than or equal to a size of the gas exhaust port located on the periphery of the substrate support. The chamber of claim 6, wherein the number per unit area of the gas exhaust port located on the center of the substrate support is greater than or equal to the number per unit area of the gas exhaust port located on the periphery of the substrate support. The chamber according to any one of claims 1 to 3, wherein the total area occupied by the gas exhaust port is equal to or larger than the total area occupied by the gas ejection port. 4. The chamber of any one of claims 1 to 3, wherein the gas inlet and gas outlet are formed in one or more shower heads installed above the chamber. 11. The shower head of claim 10, wherein the shower head comprises a plurality of holes formed in the bottom surface, an inner space communicating with the plurality of holes, a plurality of through holes penetrating the bottom surface and an upper surface opposite thereto, and the inner space. One or more first tubes communicating with the outside of the chamber, wherein one or more second tubes communicating with the outside of the chamber are formed between the top surface of the shower head and the top wall of the chamber, the shower head being below the bottom surface. And the space on the upper surface of the space and the upper surface is configured and arranged to communicate only through the plurality of through holes, wherein the first pipe is any one of a gas supply pipe for supplying gas into the chamber and an exhaust pipe for exhausting the gas in the chamber; And the second pipe is another one of a gas supply pipe and an exhaust pipe. The chamber of claim 11, wherein the first pipe is a gas supply pipe, and an injection distribution plate is formed between the gas supply pipe and an upper surface of the shower head. The chamber of claim 11, wherein a plurality of exhaust pipes are installed around the chamber. 4. The chamber of any one of the preceding claims, wherein the gas injection port is located closer to the substrate than the gas exhaust port. The chamber according to any one of claims 1 to 3, wherein the substrate is an LCD or an organic EL substrate. According to any one of claims 1 to 3, wherein the gas injection port is formed in at least one shower head is provided on at least one upper portion of the substrate support, the gas exhaust port is formed at least one or more in the chamber wall above the shower head Chamber characterized in that. The chamber of claim 16, wherein an exhaust distribution plate having a plurality of exhaust holes is formed under the gas exhaust port. The chamber according to any one of claims 1 to 3, wherein the gas injection port is a nozzle of the injector, and the gas exhaust port is formed at least one of the chamber walls above the injector. 19. The chamber of claim 18, wherein an exhaust distribution plate having a plurality of exhaust holes is formed between the gas exhaust port and the injector. A shower head for a chamber for processing a substrate, A plurality of gas nozzles, And a plurality of gas exhaust ports. 21. The showerhead of claim 20, wherein the gas exhaust port is disposed adjacent to the gas injection port. 21. The showerhead according to claim 20, wherein the gas injection port is disposed between the gas exhaust ports. 23. The area according to any one of claims 20 to 22, wherein an area occupied per unit area by the gas exhaust port located on the center of the substrate support is greater than an area occupied by the gas exhaust port located on the periphery of the substrate support. A shower head, characterized by being greater than or equal to. 24. The shower head of claim 23, wherein the size of the gas exhaust port located on the center of the substrate support is equal to or larger than the size of the gas exhaust port located on the periphery of the substrate support. 24. The showerhead of claim 23, wherein the number per unit area of the gas exhaust port located on the center of the substrate support is greater than or equal to the number per unit area of the gas exhaust port located on the periphery of the substrate support. 23. The showerhead according to any one of claims 20 to 22, wherein the total area occupied by the gas exhaust port is equal to or larger than the total area occupied by the gas ejection port. 23. The showerhead according to any one of claims 20 to 22, wherein the gas nozzle is protruded. 23. The apparatus according to any one of claims 20 to 22, further comprising: a plurality of holes formed in the bottom surface, an inner space communicating with the plurality of holes, a plurality of through holes penetrating the bottom surface and the upper surface opposite thereto; And a pipe for communicating the internal space to the outside, wherein the plurality of holes are any one of the gas injection port and the gas exhaust port, and the plurality of through holes are the other one of the gas injection port and the gas exhaust port. head.