KR20070069122A - Semiconductor manufacturing apparatus - Google Patents

Abstract

A semiconductor fabricating apparatus is provided to uniformly spray a reaction gas onto a shower head by using a baffle integrally formed with a gas supply inlet. A gas supply part(131) has a gas supply inlet(131) for supplying a gas. A baffle(132) is spaced apart from the gas supply inlet at a predetermined distance, and has a size larger than a diameter of the gas supply inlet. A shower head(133) uniformly sprays the gas under the baffle. If a size of the gas supply inlet is 1, the size of the baffle is 1.0 to 5.0. The baffle is welded or fastened to the gas supply inlet.

Description

Semiconductor manufacturing apparatus

1 is a cross-sectional conceptual view illustrating a conventional semiconductor manufacturing apparatus.

2 is a perspective view of a conventional showerhead and a baffle.

3 is a conceptual cross-sectional view of a semiconductor device according to the present invention.

4 is an enlarged cross-sectional view of region A of FIG. 3;

5 is a conceptual view of a pumping port unit according to the present invention.

<Explanation of symbols for the main parts of the drawings>

10, 110: chamber 20, 120: heater block portion

21, 121: wafer 30, 130: shower head

42, 140: pumping port

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus, and more particularly, to a large-diameter CVD apparatus which is stable inflow and outflow of process gas.

In general, in order to maximize the yield per unit wafer, the size of the semiconductor device is decreasing and the size of the wafer is gradually increasing, and wafers having a diameter of 200 mm or more are currently used.

Such large diameter wafers are subjected to various processes required for semiconductor device fabrication in one or more chambers. Among these processes, a reaction gas for deposition or etching is introduced into the chamber to form a material film on the wafer, or a process of etching the material film formed on the wafer according to a predetermined pattern.

For example, a process of depositing a predetermined material film such as an oxide film or a nitride film on a wafer by LPCVD, PECVD, etc., etching the contact hole for electrical contact between the semiconductor substrate and the metal wiring, and for use in patterning the contact hole The photoresist pattern may be removed by ashing, and the silicon treatment may be performed by etching and removing the damaged substrate silicon layer during the contact hole etching.

When the reaction gas for deposition or etching flows in the downstream from the upper part of the chamber and proceeds with the deposition or etching process, a gas injection unit is installed on the wafer in order to distribute the reaction gas evenly over the entire surface of the wafer.

However, such a conventional gas adrenal portion causes a lot of problems in uniformity when the process is performed by the introduced process gas as the wafer is large-sized.

1 is a cross-sectional conceptual view illustrating a conventional semiconductor manufacturing apparatus.

2 is a perspective view of a conventional showerhead and a baffle.

1 and 2, a conventional semiconductor manufacturing apparatus reacts with a chamber 10 having a reaction space, a heater block portion 20 disposed below the chamber 10 and on which a wafer 21 is seated. A plurality of shower heads 30 disposed on the chamber 10 for supplying gas into the chamber 10 and a plurality of sidewalls of the chamber 10 between the heater block unit 20 and the shower head 30 are formed. The exhaust port 40 and a pumping port 42 for exhausting the unreacted gas to the outside of the chamber 10 through the exhaust port (40). In addition, a gate valve (not shown) is formed on the side of the reaction chamber 10. In addition, a separate plasma generator for generating a plasma is disposed inside the chamber.

 The conventional shower head 30 includes a gas supply port 31 into which a reaction gas is injected, a sour head 33 fastened to the reaction gas supply port 31, and a reaction gas to the sour head 33 uniformly. It includes a baffle 32 of the same size and prefabricated in the showerhead 33 for spraying.

Since the baffle 32 of the conventional shower head portion 30 is formed to have the same size as the shower head 33, there is a disadvantage in that cost and time are consumed when regular and irregular maintenance of the equipment is required. That is, when arcing occurs during the process, not only the shower head 33 but also the baffle 32 prefabricated in the shower head 33 are affected and damaged. For this reason, the shower head 33 and the baffle 32 must be replaced together. In addition, when the baffle 32 is separated from the shower head 33 and then reassembled, a problem arises in that the assembly state varies depending on the skill of the assembling worker. As a result, gas pollution and plasma arcs are generated in the baffle 32 and the shower head 33 inside the shower head 30, resulting in a long loss time due to parts maintenance due to defective parts. It falls, and it becomes a problem that productivity falls. In addition, there is a problem that costs a lot of maintenance.

Moreover, a problem arises also in the thin film manufacturing process using the conventional semiconductor manufacturing apparatus.

That is, the reaction gas is introduced through the gas supply port 31 of the shower head 30, and then uniformly supplied to the entire area of the interior space of the shower head 33 by the baffle 32, and then the shower head It is injected into the chamber 10 uniformly through (33). At this time, a low temperature reaction gas flows again into the substrate stabilized at the thin film formation temperature, and a slight temperature drop occurs due to a time difference. That is, a time difference occurs when the low-temperature reaction gas exits through the baffle 32 and the shower head 33. As a result, the temperature inside the chamber 10 drops instantaneously. Therefore, after some time for deposition, the thin film is deposited under stable temperature. As a result, the thin film deposition time becomes long.

In addition, in the conventional semiconductor manufacturing apparatus, an exhaust port 40 and a pumping port 42 are disposed in a chamber sidewall region between the shower head 30 and the heater block 20, and remain in the chamber 10 through the apparatus. The reaction gas and the reaction by-products are removed. However, in the case of large diameter, when the reaction gas is removed through the side surface, the complete removal of the unreacted gas at the edge of the heater block portion 20 is slowed down so that the unreacted reaction gas is not uniformly removed. As a result, the unreacted gases are reacted again on the wafer 21, which makes it difficult to form a high quality film of a uniform thickness on the wafer 21. In addition, a problem arises in that it is difficult to secure a uniform distribution of the reaction gas. That is, there is a problem in that the distribution of the reaction gas due to the increase or decrease of the amount of the reaction gas entering the chamber 10 is not easy to control.

Therefore, in order to solve the above problems, the size of the baffle may be optimized at the inlet of the reaction gas into the shower head of the large-diameter equipment so that the reaction gas may be rapidly and uniformly dispersed in the entire shower head inner space. In addition, it is possible to minimize the time for the gas dispersed through the shower head to reach the wafer, and to control the removal path of the reaction gas to facilitate the removal of the remaining reaction gas and by-products, and to distribute the reaction gas uniformly. It is an object of the present invention to provide a semiconductor manufacturing apparatus capable of improving the uniformity of a thin film.

A gas supply unit including the gas supply port to which gas is supplied according to the present invention, a baffle spaced apart a predetermined distance below the gas supply port, and integrated at a position adjacent to the gas supply port by a size greater than or equal to the diameter of the gas supply port; Provided is a gas injection system including a shower head for uniformly injecting gas to the bottom of the baffle.

Here, when the size of the gas supply port is 1, the size of the baffle is preferably 1.0 to 5.0. In this case, it is effective that the baffle is integrated with the gas supply port through welding or screws. The baffle may have a circular flat plate shape, a flat plate shape protruding in a conical or semicircular shape, and a flat plate shape having irregularities formed on at least a portion of the upper surface.

In addition, a gas exhaust system including an exhaust port portion having an exhaust port for sucking gas according to the present invention, an exhaust gas induction pipe for inducing exhaust gas around the exhaust port, and an exhaust pump extending to a part of the exhaust gas induction pipe. to provide.

Here, the exhaust port is a plate having a curved surface or inclined surface formed in the edge region, it is effective that a plurality of exhaust ports are formed in the curved surface or inclined surface region.

In addition, in the semiconductor manufacturing apparatus according to the present invention, a chamber and a predetermined gas introduced through the gas supply port are injected into the chamber, and the diameter of the gas supply port is spaced apart a predetermined distance below the gas supply port. The showerhead unit having a built-in baffle integrated in a position adjacent to the gas supply port with the above size, a heater block unit in which a wafer is seated below the shower head unit, and positioned under the heater block unit, and include a plurality of exhaust ports. Provided is a semiconductor manufacturing apparatus including a pumping port part.

The shower head may include a gas supply part including the gas supply port through which gas is supplied, a baffle welded to the gas supply port, and a shower head uniformly injecting gas into the chamber under the baffle. It is preferable.

In this case, when the size of the gas supply port is 1, the size of the baffle is 1.0 to 5.0, and the separation distance between the baffle and the gas supply port is 3 to 15 mm.

A plate having a curved or inclined surface formed in the edge region, an exhaust port portion having a plurality of exhaust ports for sucking gas in the curved or inclined surface region, an exhaust gas induction pipe for inducing exhaust gas around the exhaust port, and the exhaust gas induction pipe It is effective to include an exhaust pump extended to a portion of the.

Hereinafter, with reference to the accompanying drawings will be described an embodiment of the present invention in more detail. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms, and only the embodiments are intended to complete the disclosure of the present invention, and to those skilled in the art to fully understand the scope of the invention. It is provided to inform you. Like numbers refer to like elements in the figures.

3 is a conceptual cross-sectional view of a semiconductor device according to the present invention.

4 is an enlarged cross-sectional view of region A of FIG. 3, and FIGS. 5 and 6 are conceptual views illustrating a baffle according to the present invention.

7 is a conceptual diagram of a pumping port unit according to the present invention.

3 to 7, the semiconductor device according to the present invention has a reaction space, a chamber 110 having a predetermined curved surface below, a gas is injected into the chamber 110, and a gas supply port 131 is provided. Shower head 130 having an integrated baffle 132, a heater block 120 on which a wafer 121 is seated under the shower head 130, and a lower curved surface of the chamber 110. It includes a pumping port 140 including a plurality of exhaust port 142 formed. In addition, the gate valve may further include a gate valve for controlling the opening and closing of the chamber 110, which is not shown. The wafer 121 is loaded into the heater block part 120 or unloaded out of the chamber 110 through the gate valve. In addition, the pressure in the chamber 110 may be maintained through the gate valve. In addition, an additional pressure control unit (not shown) for maintaining a constant pressure inside the chamber 110 and a separate plasma generating unit (not shown) for generating a plasma inside the chamber 110 may be further selectively included. It may be.

In addition, the chamber 110 may further include a chamber lead (not shown) having an upper portion open and covering the upper portion of the chamber 110. The shower head 130 may be formed in a predetermined space of the chamber lid. Of course, the chamber 110 may be integrally formed, or may be separated into an upper chamber and a lower chamber.

A separate lift pin (not shown) for loading and unloading the wafer 121 may be formed in the heater block part 120, and the heater block part 120 is rotated under the heater block part 120. A drive shaft (not shown) may be formed. In addition, a separate sensor for measuring the temperature of the heater block unit 120 may be disposed. Of course, the heat block itself can also move up and down. The shape of the heater block portion 120 is preferably formed in the same shape as the wafer 121, it is effective to form a larger shape than the wafer 121. In addition, a single wafer 121 may be seated on the heater block unit 120.

As shown in FIG. 4, the shower head 130 includes a gas supply unit 131 including a gas supply port 131 to which gas is supplied, and a gas supply port 131 that is integrally welded with the gas supply port 131. 131 includes a baffle 132 disposed at an end and a shower head 133 uniformly injecting gas into the chamber 110 under the baffle 132.

The size of the baffle 132 is preferably optimized for the size of the gas supply port 131. That is, the reaction gas is uniformly dispersed in the entire area of the inner space of the shower head 133, the time that the reaction gas is stabilized by minimizing the time that the reaction gas reaches the substrate through the shower head 133 It is desirable to optimize the size of the baffle 132 to minimize the size of the baffle 132. The reaction gas supplied through the gas supply port 131 hits the baffle 132 at least once so that the reaction gas traveling straight through the gas supply port 131 may be uniformly supplied to the entire area of the shower head 133. have. For this purpose, it is effective to reduce the size of the baffle. That is, when the diameter T1 of the gas supply port 131 is 1, it is preferable that the magnitude | size T2 of the baffle 132 is 1.0-5.0. More preferably, the size T2 of the baffle 132 is 1.5 to 3.0. In addition, it is effective that the distance H1 between the baffles 132 at the lower end of the gas supply port 131 is also 3 to 15 mm.

The range may vary depending on the diameter of the gas supply port, the flow rate, and the size of the baffle.

The shape of the baffle 132 may be a circular, elliptical and polygonal shape. Of course, the shape of the baffle 132 is not limited to the above-described shape, but any shape capable of uniformly injecting the gas supplied from the gas supply port 131 to the shower head 133 is possible.

As shown in FIG. 4, the shape of the baffle 132 is preferably flat. That is, it is preferable that it is a circular flat plate shape. Of course, as shown in FIG. 5, various patterns may be formed on the surface of the plate, or the upper surface of the plate may be formed in a conical or curved shape to enable uniform distribution of gas. That is, as shown in Figure 5a can have a conical top surface. That is, it can also be produced in the shape of a hat. As shown in FIG. 5B, the upper surface may have a curved shape. In addition, a predetermined pattern may be formed on the surface of the baffle 132. As shown in FIG. 5C, irregular irregularities may be formed on the upper front surface. As shown in FIG. 5D, irregular irregularities may be formed at both edges of the baffle 132. As shown in FIG. 5E, irregularities of a uniform pattern may be formed on the upper front surface.

The above-described shape and pattern are preferably formed in at least a portion of the surface area receiving gas from the gas supply port 131. The shape of the gas receiving surface may be one spiral as shown in FIG. 6A, may be a plurality of spirals as shown in FIG. 6B, or may be a plurality of irregular patterns as shown in FIG. 6C.

As described above, the size of the baffle 132 may be reduced, and the gas may be uniformly sprayed on the upper surface of the shower head 133 by changing the surface receiving the gas.

In addition, the baffle 132 is integrated with the gas supply port 131. That is, as shown in the drawing, the gas supply port 131 and the baffle 132 are integrated by welding by using a coupling member that is a separate extension bar to space the gap between the baffle 132 and the gas supply port 131. do. Of course, the present invention is not limited thereto, and the two may be integrated through a screw / bolt coupling. In this case, the coupling member for connecting between the baffle 132 and the gas supply port 131 may be variously changed within a range that does not prevent the gas injection by the baffle 132. That is, the baffle 132 and the gas supply port 131 may be coupled by one coupling member or may be coupled by a plurality of coupling members. Through this, the separation of the baffle 132 may be omitted when the showerhead 130 is separated, thereby reducing equipment maintenance costs, and replacing the baffle 132 and the showerhead 133 during regular equipment maintenance. It can save time for the back.

In the present invention, the pumping port 140 is formed at the lower portion of the chamber 110 (ie, the lower portion of the heater block) to uniformly discharge the remaining unreacted gas inside the chamber 110 to the outside of the chamber 110. Can be. The pumping port unit 140 is formed below the chamber 110 to exhaust the unreacted gas, the exhaust port 142 and the exhaust gas induction pipe 143 located on the outer peripheral surface of the chamber 110, the exhaust port 142 is formed, It is formed in a part of the exhaust gas induction pipe 143 includes a pump 144 for exhausting the gas to the outside.

The unreacted gas and the reaction by-products after the thin film process remain on the large-diameter wafer 121, but by the pumping port 140 according to the present invention, a small gap between the edge of the heater block 120 and the inner wall of the chamber 110 is achieved. The unreacted gas and reaction by-products are removed to the lower portion of the heater block 120 through the space. Here, a predetermined curved surface may be formed below the chamber 110, and an exhaust port 142 may be formed on the curved surface to prevent vortex phenomena occurring during the lower exhaust. That is, the shape of the lower portion of the chamber 110 is formed to be connected to an inclined surface or curved surface having a predetermined angle rather than the vertical shape of the side wall and the bottom surface, and an exhaust port 142 is formed in the curved region. Exhaust port 142 is not limited to the above description, may be formed in all areas below the heater block 120, the exhaust port 142 may be arranged uniformly at regular intervals, the exhaust port 142 of Size can also be kept constant. Of course, the exhaust ports 142 having various sizes may be arranged at various intervals. Preferably, the diameter of the exhaust port is preferably 2 to 15 mm, and the average interval between the exhaust ports is preferably 1 to 20 mm. This allows for effective exhaust.

Exhaust port 142 of the present invention may be manufactured in a separate plate form may be disposed below the chamber 110, or may be manufactured integrally with the chamber 110. This makes it possible to prevent the non-uniform removal of the exhaust gas and to lower the uniformity of the thin film on the wafer due to the vortex of the exhaust gas.

The semiconductor manufacturing apparatus of the present invention described above may be disposed in a single chamber form to be used in a semiconductor manufacturing process, and a plurality of chambers may be connected in a batch type. That is, the semiconductor manufacturing apparatus of the present invention may further include a load lock unit in which the wafer is located and a transfer unit for transferring the wafer into the chamber from the load lock unit. These chambers are connected to each other by a gate valve, and the internal environment is protected.

The operation of the semiconductor manufacturing apparatus of the present invention having the above-described structure will be briefly described as follows.

After opening the gate valve, the wafer 121 positioned in the load lock part is transferred to the heater block part 120 in the chamber 110 of the present invention having a predetermined reaction space through the transfer part. After closing the gate valve, the pressure in the chamber 110 is adjusted to the deposition pressure, and the heater block 120 is heated to raise the deposition temperature. At this time, the stabilization time is required to some extent to stabilize the temperature for the process progress.

 Thereafter, the external deposition gas is evenly sprayed into the chamber 110 through the shower head 130. In this case, the deposition gas is injected through the gas supply port 131, and the gas induced by the gas supply port 131 is uniformly spread on the showerhead 133 by the baffle 132 integrated therewith. In the present invention, the size of the baffle 132 may be optimized, and the gas supply port 131 may be integrated to minimize the spread of the gas and the time taken for the deposition gas to pass through the shower head 130 to reach the substrate. . As a result, the instantaneous temperature change in the chamber 110 may be minimized during the gas injection for deposition. For example, when the size of the baffle 132 in the shower head 130 is made to be 1.2 to 2.0 times smaller than the diameter of the gas supply port, all of the gas that has been straight through the gas inlet 131 is connected to the baffle 132. It will strike and spread horizontally. In addition, because the size of the baffle 132 is small, it takes less time to reach the gas that hits it, thereby reducing the minute temperature change time in the chamber 110 by the gas injection. As a result, the stabilization time for thin film deposition can be reduced.

The deposition gas uniformly spread on the showerhead 133 through the baffle 132 is uniformly injected into the chamber 110 through the showerhead 133. At this time, the time that the gas reaches the substrate and the minute temperature change time may vary according to the injection amount and the injection speed of the deposition gas to be injected, the injection speed into the chamber 110 may also be changed, sour Uniformity of gas injection through the head 133 may be controlled. As the deposition gas, a wide variety of gases may be used depending on the film formed on the wafer 121.

Next, a plasma is generated in the chamber 110 to deposit a thin film on the wafer 121. After the thin film deposition process is completed, the unreacted deposition gas and the reaction by-products in the chamber 110 are removed through the pumping port 140 located under the heater block 120. That is, in the reaction process and after the reaction process, in the case of the large-diameter wafer 131, reaction by-products remain on the wafer 131 and unreacted gases remain on the heater block 120. Therefore, after the reaction process, these reaction by-products and unreacted gas should be removed uniformly and completely. Therefore, in the present invention, by-products and unreacted gases may be sucked toward the lower region of the chamber 110, that is, the lower region of the heater block unit 120 in which the wafer 121 is disposed, and thus they may be uniformly removed. The upper gas is exhausted in the downward direction instead of the side wall or the top, so that the gas can be removed more effectively. At this time, a predetermined space is formed between the heater block unit 120 and the inside of the chamber 110, through which the reaction by-product and the unreacted gas are pumped port unit 140 below the heater block unit 120. To be exhausted. On the other hand, in the present invention, in order to prevent the vortex of the gas that may occur when the exhaust from the heater block unit 120, the plate has a circular shape with a slight inclination and a plurality of exhaust port 131 is formed Placed below the chamber 110. That is, a predetermined curved surface is provided at both edge regions, and a plurality of exhaust ports 131 are formed in the curved region to prevent vortex phenomena of the exhausted gas.

Through the pumping port unit 140 described above, it is possible to prevent nonuniformity of the thin film due to uneven exhaust of unreacted deposition gas.

After removing the unreacted deposition gas and the reaction by-products as described above, the gate valve is opened, and the wafer on the heater block is unloaded out of the chamber through the transfer part and seated in the load lock part.

The thin film process using the semiconductor manufacturing apparatus according to the present invention described above minimizes the temperature loss inside the chamber, uniforms the temperature gradient of the reaction gas to the entire substrate, and solves the problem caused by the one side of the reaction gas. Can improve the sex. In addition, a small baffle with an integrated gas supply can save cost and time when equipment is required for regular and occasional maintenance and can be easily maintained by unskilled personnel.

In addition, cleaning of the semiconductor manufacturing apparatus which concerns on this invention is as follows.

In general, when the thin film deposition process is performed in the chamber, the thin film may be somewhat deposited on the inside of the chamber and the surface of the shower head.

When the thin film deposited on the showerhead is continuously processed, thermal stress is generated in the deposited thin film due to the difference in thermal expansion coefficient of the thin film. As a result, when a part of the thin film is peeled off and a continuous process is performed, foreign matter is generated in the thin film. In order to solve this problem, in the present invention, the cleaning source is injected into the chamber through a reaction gas supply pipe, a baffle, and a shower head through a plasma generation unit, which is a remote plasma apparatus located at the top of the chamber, to perform etching. This can remove the thin film remaining on the chamber inner wall and the showerhead surface. At this time, NF ₃ is used as the gas for the cleaning source, and NF ₃ plasma etching using the same is performed.

As described above, the present invention is integrated with the gas inlet, and the reaction gas is uniformly distributed in the showerhead through a small sized baffle, and uniformly and rapidly sprayed onto the substrate on the heater through the showerhead.

In addition, it is possible to minimize the time for the reaction gas to reach the substrate through the showerhead to minimize the time to stabilize the temperature at which the reaction occurs.

In addition, maintenance time and cost of equipment can be reduced.

In addition, the removal path of the reaction gas may be changed to the lower part of the substrate to facilitate the removal of the reaction by-product, and the reaction gas may be uniformly distributed to improve the uniformity of the thin film.

Claims (10)

A gas supply unit including the gas supply port through which gas is supplied; A baffle spaced below the gas supply port, the baffle being integrated at a position adjacent to the gas supply port with a size greater than or equal to the diameter of the gas supply port; And And a showerhead for uniformly injecting gas under the baffle. The method according to claim 1, When the size of the gas supply port is 1, the size of the baffle is 1.0 to 5.0 gas injection system. The method according to claim 1, And the baffle is integrated with the gas supply port by welding or screwing. The method according to claim 1 to 3, The baffle has a circular flat plate shape, a flat plate shape protruding in a conical or semi-circular shape, a flat plate shape with irregularities formed on at least a portion of the upper surface. An exhaust port portion formed with an exhaust port for sucking gas; An exhaust gas induction pipe for inducing exhaust gas around the exhaust port; And And an exhaust pump extending to a portion of the exhaust gas induction pipe. The method according to claim 5, The exhaust port portion is a gas exhaust system formed with a curved surface or inclined surface in the edge region and a plurality of exhaust ports in the curved or inclined surface region. In the semiconductor manufacturing apparatus, chamber; Injects a predetermined gas introduced through the gas supply port into the chamber, spaces a predetermined distance below the gas supply port, and incorporates a baffle integrated at a position adjacent to the gas supply port with a size greater than or equal to the diameter of the gas supply port. Shower head portion; A heater block part on which a wafer is seated under the shower head part; And The semiconductor manufacturing apparatus comprising a pumping port part disposed below the heater block part and including a plurality of exhaust ports. The method according to claim 7, wherein the shower head portion, A gas supply unit including the gas supply port through which gas is supplied; A baffle welded to the gas supply port; And And a shower head injecting a gas uniformly into the chamber under the baffle. The method according to claim 7 or 8, When the size of the gas supply port is 1, the size of the baffle is 1.0 to 5.0, the separation distance between the baffle and the gas supply port is 3 to 15mm. The method according to claim 7, An exhaust port portion having a curved surface or an inclined surface formed at an edge region thereof and having a plurality of exhaust ports for sucking gas in the curved or inclined surface region; An exhaust gas induction pipe for inducing exhaust gas around the exhaust port; And And an exhaust pump extending to a portion of the exhaust gas induction pipe.

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