KR20090009572A - Semiconductor apparatus of furnace type - Google Patents

Abstract

A furnace type semiconductor device is provided to dispose a spray unit of a nozzle member in a hook shape on a process tube, thereby spraying process gas at 360 degrees in all directions as surrounding the periphery of a wafer boat. A furnace type semiconductor device comprises a process tube(100), a wafer boat(200) located within the process tube, and a nozzle member(400) for spraying process gas to wafers laminated in the wafer boat. The nozzle member comprises the followings. Spray units(410) of a ring shape are disposed between the process tube and the wafer boat and surrounds the wafer boat. An introduction portion(420) receives the process gas from an external supply line and is installed in a nozzle port formed in the process tube. A connection part(430) is installed in a direction vertical to an inner side of the process tube. And the connection part supplies the process gas provided through the introduction portion to the spray unit. The spray units are located with different heights.

Description

Furnace Semiconductor Equipment {Semiconductor Apparatus of Furnace Type}

1 is a cross-sectional view showing a schematic configuration of a furnace-type semiconductor device according to an embodiment of the present invention.

2 is a view showing a process tube provided with a nozzle member installed in the process tube.

3 is a perspective view of the nozzle member.

4 is a view illustrating a nozzle member in which process gas is injected into a wafer.

5 and 6 are views showing the spray portion of the nozzle member fixed to the inner side of the process tube.

7 is a view showing a process tube in which the spray unit is formed integrally.

Explanation of symbols on the main parts of the drawings

100: process tube

200: wafer boat

300: heater

400: nozzle member

The present invention relates to a semiconductor manufacturing apparatus, and more particularly to a furnace type semiconductor equipment.

Recently, the manufacturing technology of semiconductor devices has been developed to improve the degree of integration, reliability, response speed, etc. in order to satisfy various needs of consumers. In general, a semiconductor device is manufactured by forming a pattern having electrical characteristics by performing a deposition process, a diffusion process, a photo and an etching process on a silicon wafer.

In the manufacture of semiconductor devices, low pressure chemical vapor deposition processes and diffusion processes are typically carried out in longitudinal furnaces. Specifically, the furnace type semiconductor equipment includes a heater tube and an outer tube and an inner tube made of quartz in the heater block. In addition, a boat for loading wafers is provided in the inner tube, and a plurality of wafers loaded on the boat are introduced into a process space, that is, a process chamber at one time, to perform a deposition or diffusion process.

When the process is performed using the furnace type semiconductor equipment, the process variation is very large according to the gas distribution in the equipment. Therefore, it is very important to supply the equipment so that the gas distribution in the entire area in which the process is performed, that is, the process chamber, is almost uniform.

In the furnace type semiconductor equipment, since the process gas is supplied through the nozzle located at the bottom, a difference in gas concentration occurs at the bottom and the top of the process chamber, so that it is difficult to deposit a uniform film. The structure was complicated and there was a problem of maintenance management.

It is an object of the present invention to provide a furnace type semiconductor installation having a uniform gas distribution.

It is an object of the present invention to provide a furnace type semiconductor equipment consisting of a single tube.

Furnace-type semiconductor equipment for achieving the above object is a process tube; A wafer boat positioned within the process tube; A nozzle member for injecting a process gas into the wafers loaded on the wafer boat; The nozzle member is positioned between the process tube and the wafer boat and includes ring-shaped jets surrounding the wafer boat.

According to an embodiment of the invention, the jets are located at different heights.

According to an embodiment of the present invention, the nozzle member includes: an introduction part installed at a nozzle port formed in the process tube and receiving a process gas from an external supply line; And a connection part installed in a direction perpendicular to an inner surface of the process tube and supplying the process gas received through the introduction part to the injection parts.

According to an embodiment of the present invention, the injection parts of the nozzle member are fixed to the inner surface of the process tube.

According to an embodiment of the present invention, the process tube further includes fixing members for fixing the injection parts of the nozzle member on the inner surface.

According to an embodiment of the present invention, the jetting portion includes injection holes for injecting a process gas toward the center of the wafer placed on the wafer boat.

According to an exemplary embodiment of the present invention, the injector includes an injection hole for injecting a gas by giving an angle in an upper or lower direction of the injector or injecting a process gas by adjusting a gas injection direction in combination.

According to an embodiment of the present invention, the injection parts include injection holes for injecting a process gas toward the center of the wafer placed on the wafer boat; The injection holes have different opening areas according to heights of the injection parts.

According to an embodiment of the present invention, the process tube further includes an exhaust port connected to the exhaust line to reduce the exhaust of the process gas supplied into the process and the inside during the process.

According to an embodiment of the present invention, the nozzle member is formed integrally with the process tube.

Furnace-type semiconductor equipment for achieving the above object is a process tube; A heater block for heating the inside of the process tube outside the process tube; A wafer boat positioned within the process tube; A nozzle member for injecting a process gas into the wafers loaded on the wafer boat; The nozzle member has a ring-shaped injection portion fixedly installed along the inner surface of the process tube; And an introduction part installed in the nozzle port formed in the process tube and receiving the process gas from an external supply line and providing the process gas to the injection parts.

According to an exemplary embodiment of the present invention, the injection parts include injection holes for injecting a process gas toward the center of the wafer placed on the wafer boat.

Furnace-type semiconductor equipment for achieving the above object is a process tube; A wafer boat located within said process tube; The process tube has injection portions provided in a ring form along the inner surface for injecting the process gas into the wafers loaded on the wafer boat.

Furnace-type semiconductor equipment for achieving the above object is a process tube; And a wafer boat positioned within the process tube; The process tube includes horizontal passages formed in a ring shape on the side; A vertical passage connected to the horizontal passages; A supply port for supplying a process gas to the vertical passage; It has injection holes in communication with the horizontal passage on the inner side for injecting the process gas provided to the horizontal passage through the vertical passage to the wafers loaded on the wafer boat.

For example, embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited by the embodiments described below. This embodiment is provided to more completely explain the present invention to those skilled in the art. Accordingly, the shape of the elements in the drawings and the like are exaggerated to emphasize a clearer description.

Exemplary embodiments of the present invention will be described in detail with reference to FIGS. 1 to 7. In addition, in the drawings, the same reference numerals are denoted together for components that perform the same function.

The basic feature of the present invention is that ring-shaped nozzle portions installed at different heights in order to have a uniform gas distribution are installed on the inner surface of the process tube.

1 is a cross-sectional view showing a schematic configuration of a furnace-type semiconductor device according to an embodiment of the present invention. 2 is a view showing a process tube provided with a nozzle member installed in the process tube. 3 is a perspective view of the nozzle member. 4 is a view illustrating a nozzle member in which process gas is injected into a wafer.

As shown in FIGS. 1 to 4, the furnace type semiconductor facility 10 of the present invention includes a process tube 100, a wafer boat 200, a heater 300 and a nozzle member 400.

Process tube

Process tube 100 is made of a cylindrical tube shape of the dome shape. The process tube 100 provides an internal space in which a wafer boat 200 loaded with a wafer w is loaded and chemical vapor deposition (thin film deposition process, diffusion process, etc.) is performed on the wafers. Process tube 100 may be made of a material that can withstand high temperatures, such as quartz. The process tube 100 is a nozzle port 110 for mounting the nozzle member 400 for injecting the process gas into the process tube 100 at one side of the lower end, and the internal air to reduce the pressure inside the process tube 100 Exhaust port 120 for forcibly sucking and exhausting is provided. The exhaust port 120 is provided to exhaust air in the process tube 100 to the outside during the process. The exhaust port 120 is connected to the exhaust line, and exhaust and internal pressure reduction of the process gas supplied to the process tube 100 through the exhaust port 120 are performed.

In the present embodiment, the process tube 100 is provided with a nozzle port 110 separately, but a hole through which the introduction portion 420 of the nozzle member 400 penetrates is formed in the process tube 100, and an introduction portion ( 420 may be inserted and then completely fixed and sealed by welding or the like.

As described above, according to the present invention, since the process tube 100 includes the exhaust port 120 and the nozzle port 110, a separate flange member may be omitted.

Wafer boat

The wafer boat has slots into which 25 or 50 (or more) wafers are inserted. The wafer boat is mounted on the seal cap, and the seal cap 210 is loaded into the process tube 100 or unloaded out of the process tube 100 by a driver 230 which is an elevator device. Once the wafer boat is loaded into the process tube 100, the seal cap is engaged with the flange 130 of the process tube 100. Meanwhile, a sealing member such as an O-ring 212 for sealing is provided at a portion where the flange 130 and the seal cap 210 of the process tube 100 come into contact with each other so that the process gas is processed. Do not leak between the tube 100 and the seal cap 210.

Nozzle member

The nozzle member 400 is installed through horizontal nozzles 410 for injecting a process gas into the wafers loaded on the wafer boat 200, and is installed through the nozzle port 110 and is processed from an external supply line 500. An introduction part 420 receiving gas and a vertical connection part 430 connecting between the injection part 410 and the introduction part 420 are included.

First, the introduction part 420 is a part inserted into and fixed to the nozzle port 110, and an outer circumferential surface thereof may have a quadrangular shape. As a matter of course, the nozzle port 110 may be processed into a quadrangular shape into which the introduction part 420 may be inserted, thereby preventing any rotation of the introduction part 420 and facilitating installation convenience. For example, the introduction portion 420 preferably has at least one plane or is shaped into a polygonal structure such as a 5 angle, a 6 angle, and the like. One end of the inlet 420 extends outward through the nozzle port 110 and is connected to an external supply line 500.

The connection part 430 is a connection part between the introduction part 420 and the injection part 410 and is installed perpendicular to the inner surface of the process tube. The connection part may serve as a reinforcing bar to prevent sagging of the injection parts 410. Of course, since the spraying portions 410 are fixed to the inner surface 102 of the process tube 100, no sag occurs, but the spraying portions 410 are fixed to the inner surface 102 of the process tube 100. Until now, it is supported by the connecting portion 430.

As described above, the nozzle member 400 processes a portion fixed to the process tube and a portion bent at a right angle into a polygon, so that the nozzle member 400 is connected to the nozzle port 110 of the process tube 100 at a time regardless of the skill of the operator. Can be inserted and fixed.

On the other hand, the injection unit 410 is formed in a ring shape disposed along the inner surface 102 of the process tube 100, and has injection holes for injecting the process gas toward the center of the substrate. The injection holes 412 are configured by injecting a gas by adjusting the gas injection direction at an angle toward the center direction of the process tube 100 or the upper or lower direction of the injection unit 410 according to process conditions, or by adjusting the gas injection direction in combination. can do. The injection parts 410 are horizontally disposed at a predetermined interval in the process tube 100. Installation height and spacing and the number of installation of the injection portion 410 may be changed in various ways depending on the process characteristics. The jets 410 are fixed to the inner side 102 of the process tube 100.

5 and 6 show the jets of the nozzle member fixed to the inner side of the process tube.

As shown in FIG. 5, the jets 410 may be fixed to the inner side 102 of the process tube 100 by welding. Alternatively, as shown in FIG. 6, the injection parts 410 may be fixed by fixing members 104 installed on the inner side surface 102 of the process tube 100. Here, the connection part 430 may also be fixed by welding or fixing members in the same manner as the injection parts. The injection units 410 have injection holes 412 for injecting a process gas between wafers placed on the wafer boat 200. The process gas is injected into the space between the wafer and the wafer through the injection holes 412. In particular, as the injection holes 412 move away from the introduction portion 420, the opening area may be increased to enable uniform gas supply. In addition, the injection holes 412 may be configured more densely or vice versa by adjusting the interval according to the process conditions.

As described above, the ring-shaped injection units 410 are disposed at different heights in the process tube, so that the process gas may be directly injected to each of the wafers positioned at the lowermost and uppermost ends of the wafer boat 200. In particular, as shown in FIG. 4, the injection parts 410 may provide a uniform gas distribution inside the process tube 100 by injecting the process gas in a 360 degree direction while surrounding the wafer boat 200. In addition, the inner tube can be omitted by providing the process gas uniformly to the wafers.

The heater 300 provides a predetermined heat to the process tube 100 outside the process tube 100 to maintain the temperature inside the process tube 100 required for the process. To this end, the heater 300 is provided with a control unit (not shown) outside the facility 10, the control unit senses the temperature of the process tube 100, the temperature of the process tube 100 is below the temperature required for the process When down to the heater 300 is controlled to heat the process tube (100).

Modification example

The nozzle member in the furnace type semiconductor equipment of the present invention may also be implemented in the following alternative variants.

7 is a view showing an example in which the injection portion of the nozzle member is integrally formed on the inner surface of the process tube.

As shown in FIG. 7, the process tube 100a has injection portions 180 provided in a ring shape along an inner side surface for injecting process gas into wafers loaded on the wafer boat 200. The injection unit 180 sprays the horizontal passage 182 formed in a ring shape on the side of the process tube 100 and the process gas provided in the horizontal passage 182 to wafers loaded on the wafer boat 200. In order to have the injection hole 184 in communication with the horizontal passage 182 on the inner side. The process tube 100a is connected to an external supply line 500 at the bottom thereof so that the supply port 186 receives the process gas, and is perpendicular to the process tube to connect the supply port 186 and the horizontal passage 182. It has a vertical passage 188 formed.

In the present modified example, the injection unit 180 protrudes to the inner surface of the process tube 100a, but the injection unit 180 may be implemented so that the inner surface of the process tube 100a is flat. Gas flow in the tube 100a can be made more smoothly.

The furnace type semiconductor facility of the present invention may be configured to perform various wafer processing operations. For example, it may be a chemical vapor deposition (CVD) chamber configured to deposit an insulating film, and an etch chamber configured to etch apertures or openings in the insulating film to form interconnect structures. Or a PVD chamber configured to deposit a barrier film, and may be a PVD chamber configured to deposit a metal film. Or a chamber for depositing an atomic layer or a diffusion chamber.

In the above, the configuration and operation of the furnace-type semiconductor equipment according to the present invention is shown in accordance with the above description and drawings, but this is just described, for example, and various changes and modifications can be made without departing from the technical spirit of the present invention. Of course.

As described above, the present invention can omit a separate flange member because the process tube includes an exhaust port and a nozzle port.

According to the present invention, the injection unit of the nozzle member is disposed in the process tube in a multi-stage in the process tube in a ring type, so that the process gas can be directly injected to each of the wafers positioned at the lowermost to the highest end of the wafer boat. In particular, the present invention can provide a uniform gas distribution inside the process tube by injecting the process gas 360 degrees in all directions while the ring-type injection portion surrounding the wafer boat. The present invention can omit the inner tube by providing the process gas uniformly to the wafers, thereby simplifying the structure and increasing the efficiency of maintenance.

Claims (13)

In furnace type semiconductor equipment: Process tubes; A wafer boat positioned within the process tube; A nozzle member for injecting a process gas into the wafers loaded on the wafer boat; And the nozzle member is located between the process tube and the wafer boat and comprises ring-shaped jets surrounding the wafer boat. The method of claim 1, Furnace type semiconductor equipment, characterized in that the injection portion is located at different heights. The method of claim 1, The nozzle member is An introduction part installed at a nozzle port formed in the process tube and receiving a process gas from an external supply line; And Furnace-type semiconductor equipment is installed in a direction perpendicular to the inner surface of the process tube, further comprising a connection for supplying the process gas provided through the introduction portion to the injection portion. The method of claim 1, Injection parts of the nozzle member Furnace type semiconductor equipment, characterized in that fixed to the inner surface of the process tube. The method of claim 1, The process tube Furnace semiconductor equipment characterized in that it further comprises a fixing member for fixing the injection portion of the nozzle member on the inner side. The method of claim 1, And the injection unit comprises injection holes for injecting a process gas toward a center of the wafer placed on the wafer boat. The method of claim 1, The jetting portions include injection holes for injecting a process gas toward a center of a wafer placed on the wafer boat; The injection holes are furnace type semiconductor equipment, characterized in that the opening area is different depending on the height of the injection portion. The method of claim 1, The process tube further comprises an exhaust port connected to the exhaust line to reduce the exhaust of the process gas supplied to the inside during the process and the process during the furnace type semiconductor equipment. The method of claim 1, The nozzle member is Furnace-type semiconductor equipment characterized in that formed integrally with the process tube. In furnace type semiconductor equipment: Process tubes; A heater block for heating the inside of the process tube outside the process tube; A wafer boat positioned within the process tube; A nozzle member for injecting a process gas into the wafers loaded on the wafer boat; The nozzle member is Ring-shaped injection parts fixedly installed along an inner surface of the process tube; And And an introduction part installed in the nozzle port formed in the process tube and receiving the process gas from an external supply line and providing the injection gas to the injection parts. The method of claim 10, And the injection parts include injection holes for injecting a process gas toward the center of the wafer placed on the wafer boat. In furnace type semiconductor equipment: Process tubes; A wafer boat located within said process tube; The process tube Furnace type semiconductor equipment characterized in that it has the injection portion provided in the form of a ring along the inner surface for injecting the process gas to the wafers loaded on the wafer boat. In furnace type semiconductor equipment: Process tubes; And A wafer boat located within said process tube; The process tube Horizontal passages formed in a ring shape on the side; A vertical passage connected to the horizontal passages; A supply port for supplying a process gas to the vertical passage; And injecting holes communicating with the horizontal passage on the inner side to inject the process gas provided to the horizontal passages through the vertical passage to the wafers loaded on the wafer boat.

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