KR20090016924A - Semiconductor apparatus of furnace type - Google Patents

Abstract

A furnace type semiconductor facility in which spaying parts of nozzle member are arranged in process tube as multistage is provided to uniformly supply a gas to a process tube by spraying the gas into whole direction. A furnace type semiconductor facility(10) comprises a process tube(100), a wafer boat(200), and a nozzle member(400). The wafer boat is positioned inside the process tube. The nozzle member is loaded in the wafer boat, sprays a process gas into wafers, and includes a first spaying part(410a) and a second spaying part(410b) for spraying different process gas. The first spraying part and the second spraying part surround the wafer boat, and are installed at different height.

Description

Furnace Semiconductor Equipment {Semiconductor Apparatus of Furnace Type}

1 is a cross-sectional view showing a schematic configuration of a furnace-type semiconductor device according to an embodiment of the present invention.

2 is a view showing a process tube provided with a nozzle member installed in the process tube.

3 is a perspective view of the nozzle member.

4 is a view illustrating a nozzle member in which process gas is injected into a wafer.

5 is a view showing a nozzle member connected to both ends of the first and second injection parts.

6 and 7 are views showing the injection portion of the nozzle member fixed to the inner surface of the process tube.

8 is a view illustrating a process tube in which the first and second injection parts are integrally formed.

Explanation of symbols on the main parts of the drawings

100: process tube

200: wafer boat

300: heater

400: nozzle member

The present invention relates to a semiconductor manufacturing apparatus, and more particularly to a furnace type semiconductor equipment.

Recently, the manufacturing technology of semiconductor devices has been developed to improve the degree of integration, reliability, response speed, etc. in order to satisfy various needs of consumers. In general, a semiconductor device is manufactured by forming a pattern having electrical characteristics by performing a deposition process, a diffusion process, a photo and an etching process on a silicon wafer.

In the manufacture of semiconductor devices, low pressure chemical vapor deposition processes and diffusion processes are typically carried out in longitudinal furnaces. Specifically, the furnace type semiconductor equipment includes a heater tube and an outer tube and an inner tube made of quartz in the heater block. In addition, a boat for loading wafers is provided in the inner tube, and a plurality of wafers loaded on the boat are introduced into a process space, that is, a process chamber at one time, to perform a deposition or diffusion process.

When the process is performed using the furnace type semiconductor equipment, the process variation is very large according to the gas distribution in the equipment. Therefore, it is very important to supply the equipment so that the gas distribution in the entire area in which the process is performed, that is, the process chamber, is almost uniform.

In the furnace type semiconductor equipment, since the process gas is supplied through the nozzle located at the bottom, a difference in gas concentration occurs at the bottom and the top of the process chamber, so that it is difficult to deposit a uniform film. In particular, the inner tube must be provided for gas flow. The structure is complicated and there is a problem of maintenance management.

It is an object of the present invention to provide a furnace type semiconductor installation having a uniform gas distribution.

It is an object of the present invention to provide a furnace type semiconductor equipment consisting of a single tube.

Furnace type semiconductor equipment of the present invention for achieving the above object is a process tube; A wafer boat positioned within the process tube; A nozzle member for injecting a process gas into the wafers loaded on the wafer boat; The nozzle member includes first and second injection parts for injecting different process gases.

According to an embodiment of the present invention, each of the first and second injection parts is formed in a ring shape to surround the wafer boat, and is installed at different heights.

According to an embodiment of the present invention, the first and second injection parts of the nozzle member are fixed to the inner surface of the process tube.

According to an embodiment of the present invention, the process tube further includes fixing members for fixing the first and second injection parts on the inner surface.

According to an embodiment of the present invention, the first and second injection parts are located at different heights.

According to an embodiment of the present invention, the nozzle member may include: first and second introduction parts installed at a nozzle port formed in the process tube and receiving a process gas from an external supply line; And first and second connection parts installed side by side in a direction perpendicular to the inner surface of the process tube and supplying different process gases received through the first and second introduction parts to each of the first and second injection parts. Include.

According to an embodiment of the present invention, each of the first and second injection parts includes injection holes for injecting a process gas toward the center of the wafer placed on the wafer boat.

According to an embodiment of the present invention, the first and second injection parts include injection holes for injecting a process gas toward the center of the wafer placed on the wafer boat; The injection holes have different opening areas according to heights of the injection parts.

According to an embodiment of the present invention, the process tube further includes an exhaust port connected to the exhaust line to reduce the exhaust of the process gas supplied into the process and the inside during the process.

According to an embodiment of the present invention, the nozzle member is formed integrally with the process tube.

Furnace-type semiconductor equipment for achieving the above object is a process tube; A heater block for heating the inside of the process tube outside the process tube; A wafer boat positioned within the process tube; A nozzle member for injecting a process gas into the wafers loaded on the wafer boat; The nozzle member is fixedly installed along the inner surface of the process tube, the first and second injection portion of the ring shape for injecting different process gases; And first and second introduction parts installed in the nozzle port formed in the process tube and receiving different process gases from an external supply line and providing the first and second injection parts.

According to an embodiment of the present invention, the first and second injection parts include injection holes for injecting a process gas toward the center of the wafer placed on the wafer boat.

Furnace-type semiconductor equipment for achieving the above object is a process tube; A wafer boat located within said process tube; The process tube has first and second injection parts provided in a ring form along an inner surface for respectively injecting different process gases into wafers loaded on the wafer boat.

Furnace-type semiconductor equipment for achieving the above object is a process tube; And a wafer boat positioned within the process tube; The process tube includes first and second horizontal passages formed in a ring shape on the side; First and second vertical passages connected to the first and second horizontal passages, respectively; First and second supply ports configured to supply different process gases to the first and second vertical passages; The inner side surface in communication with the first and second horizontal passages and for injecting the process gas provided through the first and second vertical passages into the first and second horizontal passages to the wafers loaded on the wafer boat. It includes injection holes are formed.

For example, embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited by the embodiments described below. This embodiment is provided to more completely explain the present invention to those skilled in the art. Accordingly, the shape of the elements in the drawings and the like are exaggerated to emphasize a clearer description.

Exemplary embodiments of the present invention will be described in detail with reference to FIGS. 1 to 8. In addition, in the drawings, the same reference numerals are denoted together for components that perform the same function.

The basic feature of the present invention is that the ring-shaped first and second nozzle portions provided at different heights are provided on the inner side of the process tube to have a uniform gas distribution.

1 is a cross-sectional view showing a schematic configuration of a furnace-type semiconductor device according to an embodiment of the present invention. 2 is a view showing a process tube provided with a nozzle member installed in the process tube. 3 is a perspective view of the nozzle member. 4 is a view illustrating a nozzle member in which process gas is injected into a wafer.

As shown in FIGS. 1 to 4, the furnace type semiconductor facility 10 of the present invention includes a process tube 100, a wafer boat 200, a heater 300 and a nozzle member 400.

Process tube

Process tube 100 is made of a cylindrical tube shape of the dome shape. The process tube 100 provides an internal space in which a wafer boat 200 loaded with a wafer w is loaded and chemical vapor deposition (thin film deposition process, diffusion process, etc.) is performed on the wafers. Process tube 100 may be made of a material that can withstand high temperatures, such as quartz. The process tube 100 includes first and second nozzle ports 110a and 110b for mounting the nozzle member 400 to inject the process gas into the process tube 100 at one side of the lower end, and the process tube 100. An exhaust port 120 is provided to forcibly suck and exhaust the internal air to depressurize the inside. The exhaust port 120 is provided to exhaust air in the process tube 100 to the outside during the process. The exhaust port 120 is connected to the exhaust line, and exhaust and internal pressure reduction of the process gas supplied to the process tube 100 through the exhaust port 120 are performed.

Although the process tube 100 includes the first and second nozzle ports 110a and 110b separately in this embodiment, the process tube passes through the holes through which the first and second introduction portions 420a and 420b of the nozzle member 400 pass. It is formed in the (100), it can be implemented by the method of inserting the first and second introduction portion (420a, 420b) in the hole and then completely fixed and sealed by welding or the like.

As described above, according to the present invention, since the process tube 100 includes the exhaust port 120 and the nozzle port 110, a separate flange member may be omitted.

Wafer boat

The wafer boat has slots into which 25 or 50 (or more) wafers are inserted. The wafer boat is mounted on the seal cap, and the seal cap 210 is loaded into the process tube 100 or unloaded out of the process tube 100 by a driver 230 which is an elevator device. Once the wafer boat is loaded into the process tube 100, the seal cap is engaged with the flange 130 of the process tube 100. Meanwhile, a sealing member such as an O-ring 212 for sealing is provided at a portion where the flange 130 and the seal cap 210 of the process tube 100 come into contact with each other so that the process gas is processed. Do not leak between the tube 100 and the seal cap 210.

Nozzle member

The nozzle member 400 includes first and second injection parts 410a and 410b for injecting different process gases into wafers loaded on the wafer boat 200 and first and second nozzle ports 110a and 110b. First and second introduction parts 420a and 420b and first and second injection parts 410a and 410b and first and second introduction parts 420a and 420b which are installed and receive process gas from external supply lines 500a and 500b. The first and second connectors 430a and 430b which are vertically arranged to connect between them are included. As described above, the nozzle member 400 can inject different process gases onto the wafers, and the nozzle member 400 in this manner will be well suited for the process of depositing an atomic layer.

First, the first and second introduction parts 420a and 420b are inserted and fixed to the first and second nozzle ports 110a and 110b, respectively, and the outer circumferential surface thereof may have a quadrangular shape. Naturally, the first and second nozzle ports 110a and 110b may be processed into a quadrangular shape into which the first and second introduction parts 420a and 420b may be inserted, thereby preventing any rotation of the first and second introduction parts 420a and 420b. The installation work can be facilitated. For example, the first and second introduction parts 420a and 420b may have at least one plane or may be shaped into a polygonal structure such as a 5 angle, a 6 angle, and the like. One end of the first and second introduction parts 420a and 420b extends to the outside through the first and second nozzle ports 110a and 110b and is connected to an external supply line 500.

The first and second connectors 430a and 430b correspond to a connection portion between the first and second injection parts 420a and 420b and the first and second injection parts 410a and 410b. 410b) may serve as a reinforcing bar to prevent sag. Of course, no sag occurs because the first and second injection parts 410a and 410b are fixed to the inner surface 102 of the process tube 100, but the first and second injection parts 410a and 410b are the process tubes. It is supported by the first and second connectors 430a and 430b until it is fixed to the inner side surface 102 of the 100.

As described above, the nozzle member 400 processes a portion fixed to the process tube and a portion bent at a right angle into a polygon, so that the first and second nozzle ports of the process tube 100 at once, regardless of the skill of the operator. Can be inserted and fixed to (110a, 110b).

Meanwhile, the first and second injection parts 410a and 410b have a ring shape disposed along the inner side surface 102 of the process tube 100, and spray holes 412 inject the process gas toward the center of the substrate. Have them.

The injection holes 412 may inject the gas by giving an angle to the gas injection direction in the direction of the center of the process tube 100 or the upper or lower directions of the first and second injection parts 410a and 410b according to the process conditions. It can be configured by adjusting the injection direction. The first and second injection parts 410a and 410b are horizontally disposed at a predetermined interval in the process tube 100. In particular, the first injection unit 410a and the second injection unit 410b are disposed in a pair on the inner surface of the process tube, and the installation height and spacing and the number of installation of the first and second injection units 410a and 410b are It can be changed in various ways depending on the characteristics. The first and second injection parts 410a and 410b are fixed to the inner side surface 102 of the process tube 100.

Meanwhile, the first and second injection parts 410a and 410b have a ring shape with one end blocked as shown in FIG. 3. As such, the first and second injection parts 410a and 410b have a closed shape at one end because the first and second connection parts 430a and 430b are blocked. 5 illustrates a modification in which both ends of the first and second injection parts 410a and 410b are connected to the first and second connection parts 430a and 430b.

As shown in FIG. 5, first and second connection parts 430a and 430b are connected to both ends of the first and second injection parts 410a and 410b to be connected to the first and second connection parts 430a and 430b. Preferably, the grooves 460a and 460b through which the sand portions 410a and 410b pass are formed, respectively.

6 and 7 show the jets of the nozzle member fixed to the inner side of the process tube.

As shown in FIG. 6, the first and second injection parts 410a and 410b may be fixed to the inner side surface 102 of the process tube 100 by welding. Alternatively, as shown in FIG. 7, the first and second injection parts 410a and 410b may be fixed by fixing members 104 installed on the inner side surface 102 of the process tube 100. Here, the first and second connectors 430a and 430b may also be fixed by welding or fixing members in the same manner as the first and second injection units 410a and 410b. The first and second injection parts 410a and 410b have injection holes 412 for spraying a process gas between the wafers placed on the wafer boat 200. The process gas is injected into the space between the wafer and the wafer through the injection holes 412. In particular, as the injection holes 412 move away from the first and second introduction parts 420a and 420b, it is preferable to increase the opening area so that a uniform gas supply is possible. In addition, the injection holes 412 may be configured more densely or vice versa by adjusting the interval according to the process conditions.

As described above, the ring-shaped first and second injection parts 410a and 410b are disposed at different heights in the process tube, so that the process gas is directly directed to each of the wafers located at the lowermost and uppermost portions of the wafer boat 200. Can spray In particular, as shown in FIG. 4, the first and second injection parts 410a and 410b surround the wafer boat 200 and inject the process gas in 360 degree directions to provide uniform gas distribution inside the process tube 100. Can provide. In addition, the inner tube can be omitted by providing the process gas uniformly to the wafers.

The heater 300 provides a predetermined heat to the process tube 100 outside the process tube 100 to maintain the temperature inside the process tube 100 required for the process. To this end, the heater 300 is provided with a control unit (not shown) outside the facility 10, the control unit senses the temperature of the process tube 100, the temperature of the process tube 100 is below the temperature required for the process When down to the heater 300 is controlled to heat the process tube (100).

Modification example

The nozzle member in the furnace type semiconductor equipment of the present invention may also be implemented in the following alternative variants.

8 is a view showing an example in which the first and second injection parts of the nozzle member are integrally formed on the inner surface of the process tube.

As shown in FIG. 8, the process tube 100a includes first and second injection parts 180a and 180b provided in a ring shape along an inner side surface to inject a process gas into wafers loaded in the wafer boat 200. Have The first and second injection parts 180a and 180b may include first and second horizontal passages 182a and 182b formed in a ring shape on the side surfaces of the process tube 100, and first and second horizontal passages 182a and 182b. In order to spray the process gas provided to the wafers loaded on the wafer boat 200, the inner side surfaces include injection holes 184 communicating with the first and second horizontal passages 182a and 182b. The process tube 100a is connected to an external supply line 500 at a lower end thereof, and includes first and second supply ports 186a and 186b for providing process gas to respective passages, and first and second supply ports 186a and 186b) and first and second vertical passages 188a and 188b formed perpendicular to the process tube to connect the first and second horizontal passages 182a and 182b. For convenience of illustration, the second vertical passage 188b is omitted, but is formed in the process tube in parallel with the first vertical passage 188a.

In the present modified example, the injection unit 180 protrudes to the inner surface of the process tube 100a, but the injection unit 180 may be implemented so that the inner surface of the process tube 100a is flat. Gas flow in the tube 100a can be made more smoothly.

The furnace type semiconductor facility of the present invention may be configured to perform various wafer processing operations. For example, it may be a chemical vapor deposition (CVD) chamber configured to deposit an insulating film, and an etch chamber configured to etch apertures or openings in the insulating film to form interconnect structures. Or a PVD chamber configured to deposit a barrier film, and may be a PVD chamber configured to deposit a metal film. Or a chamber for depositing an atomic layer or a diffusion chamber.

In the above, the configuration and operation of the furnace-type semiconductor equipment according to the present invention is shown in accordance with the above description and drawings, but this is just described, for example, and various changes and modifications can be made without departing from the technical spirit of the present invention. Of course.

As described above, the present invention can omit a separate flange member because the process tube includes an exhaust port and a nozzle port.

According to the present invention, the first and second injection parts of the nozzle member are disposed in the process tube in a plurality of stages in the process tube in a ring type, so that different process gases may be directly injected to each of the wafers positioned at the lowermost and uppermost ends of the wafer boat. In particular, the present invention may provide a uniform gas distribution inside the process tube by injecting the process gas 360 degrees in all directions while surrounding the wafer boat around the wafer boat. The present invention can omit the inner tube by providing the process gas uniformly to the wafers, thereby simplifying the structure and increasing the efficiency of maintenance.

Claims (14)

In furnace type semiconductor equipment: Process tubes; A wafer boat positioned within the process tube; A nozzle member for injecting a process gas into the wafers loaded on the wafer boat; The nozzle member is a furnace type semiconductor equipment, characterized in that it comprises first and second injection parts for injecting different process gases. The method of claim 1, Each of the first and second injection parts is formed in a ring shape so as to surround the wafer boat and is installed at different heights. The method of claim 1, The first and second injection parts of the nozzle member Furnace type semiconductor equipment, characterized in that fixed to the inner surface of the process tube. The method of claim 1, The process tube Furnace semiconductor equipment characterized in that it further comprises a fixing member for fixing the first, the second injection portion on the inner surface. The method of claim 1, The first and second injection parts are furnace type semiconductor equipment, characterized in that located at different heights. The method according to any one of claims 1 to 5, The nozzle member is First and second introduction parts installed at a nozzle port formed in the process tube and receiving a process gas from an external supply line; And It is installed side by side in a direction perpendicular to the inner surface of the process tube, and further comprising a first, second connecting portion for supplying different process gas provided through the first, second introduction portion to each of the first, second injection portion Furnace-type semiconductor equipment characterized in that. The method of claim 1, And each of the first and second injection parts includes injection holes for injecting a process gas toward a center of the wafer placed on the wafer boat. The method of claim 1, The first and second injection parts include injection holes for injecting a process gas toward a center of a wafer placed on the wafer boat; The injection holes are furnace type semiconductor equipment, characterized in that the opening area is different depending on the height of the injection portion. The method of claim 1, The process tube further comprises an exhaust port connected to the exhaust line to reduce the exhaust of the process gas supplied to the inside during the process and the process during the furnace type semiconductor equipment. The method of claim 1, The nozzle member is Furnace-type semiconductor equipment characterized in that formed integrally with the process tube. In furnace type semiconductor equipment: Process tubes; A heater block for heating the inside of the process tube outside the process tube; A wafer boat positioned within the process tube; A nozzle member for injecting a process gas into the wafers loaded on the wafer boat; The nozzle member is First and second injection parts fixedly installed along an inner side surface of the process tube and injecting different process gases; And Furnace type semiconductor, characterized in that it comprises a first, second introduction portion which is installed in the nozzle port formed in the process tube and receives the different process gas from the external supply line to provide to the first, second injection parts. The method of claim 11, And the first and second injection parts include injection holes for injecting a process gas toward the center of the wafer placed on the wafer boat. In furnace type semiconductor equipment: Process tubes; A wafer boat located within said process tube; The process tube And first and second injection parts provided in a ring shape along an inner side surface for respectively injecting different process gases into the wafers loaded on the wafer boat. In furnace type semiconductor equipment: Process tubes; And A wafer boat located within said process tube; The process tube First and second horizontal passages formed on a side in a ring shape; First and second vertical passages connected to the first and second horizontal passages, respectively; First and second supply ports configured to supply different process gases to the first and second vertical passages; The inner side surface in communication with the first and second horizontal passages and for injecting the process gas provided through the first and second vertical passages into the first and second horizontal passages to the wafers loaded on the wafer boat. Furnace type semiconductor equipment characterized in that it comprises injection holes formed.

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