KR100445814B1 - Apparatus for Chemical Vapor Deposition - Google Patents

Apparatus for Chemical Vapor Deposition Download PDF

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Publication number
KR100445814B1
KR100445814B1 KR10-2001-0073336A KR20010073336A KR100445814B1 KR 100445814 B1 KR100445814 B1 KR 100445814B1 KR 20010073336 A KR20010073336 A KR 20010073336A KR 100445814 B1 KR100445814 B1 KR 100445814B1
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South Korea
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reaction chamber
gas
gas outlet
wafer support
purge gas
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KR10-2001-0073336A
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Korean (ko)
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KR20030042613A (en
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심경식
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주성엔지니어링(주)
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Priority to KR10-2001-0073336A priority Critical patent/KR100445814B1/en
Priority to US10/282,304 priority patent/US7390366B2/en
Priority to JP2002316228A priority patent/JP4078185B2/en
Publication of KR20030042613A publication Critical patent/KR20030042613A/en
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Publication of KR100445814B1 publication Critical patent/KR100445814B1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4558—Perforated rings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

본 발명에 따른 CVD 장치는, 화학기상증착 공정이 진행되는 반응챔버; 상기 반응챔버 내부에 설치되며 웨이퍼가 안착되어지는 웨이퍼 지지대; 상기 웨이퍼 지지대 주위로부터 상기 웨이퍼 지지대의 상부공간 중심부로 공정기체를 분사하도록 상기 반응챔버 측면부에 설치되는 기체 포커스 링; 상기 반응챔버 내부로 퍼지기체를 공급하기 위하여 상기 반응챔버 저면에 설치되는 퍼지기체 공급구; 및 상기 기체 포커스 링을 통하여 분사되는 공정기체 및 상기 퍼지기체 공급구를 통해서 공급되는 퍼지기체를 배출시키기 위하여 상기 기체 포커스 링보다는 하부에 위치하면서 상기 반응챔버의 저면으로부터 소정 간격 떨어져서 위치하도록 상기 반응챔버의 측벽에 설치되는 기체 배출구; 를 구비하는 것을 특징으로 한다. 본 발명에 의하면, 공정기체가 반응챔버의 하부공간에서 증착되는 것을 방지할 수 있어 파티클 발생을 최소화시킬 수 있을 뿐만 아니라 장비의 정검주기를 연장시킬 수 있다.The CVD apparatus according to the present invention comprises a reaction chamber in which a chemical vapor deposition process is performed; A wafer support installed in the reaction chamber and on which a wafer is seated; A gas focus ring installed at a side surface of the reaction chamber to inject a process gas from around the wafer support to the center of the upper space of the wafer support; A purge gas supply port provided at a bottom of the reaction chamber to supply a purge gas into the reaction chamber; And the reaction chamber positioned below the bottom of the reaction chamber while being disposed below the gas focus ring to discharge the process gas injected through the gas focus ring and the purge gas supplied through the purge gas supply port. A gas outlet installed at a side wall of the gas outlet; Characterized in having a. According to the present invention, the process gas can be prevented from being deposited in the lower space of the reaction chamber, thereby minimizing particle generation and extending the inspection period of the equipment.

Description

ＣＶＤ 장치{Apparatus for Chemical Vapor Deposition}Apparatus for Chemical Vapor Deposition

본 발명은 CVD 장치에 관한 것으로서, 특히 반응챔버 내벽에의 박막증착에의한 파티클 발생을 최소화할 수 있는 CVD 장치에 관한 것이다.The present invention relates to a CVD apparatus, and more particularly, to a CVD apparatus capable of minimizing particle generation due to thin film deposition on an inner wall of a reaction chamber.

종래의 CVD 장치는 반응챔버 내의 기체를 배출하는 기체 배출구가 주로 반응챔버의 저면에 설치된다. 따라서, 박막증착에 기여하지 못한 기체들이 기체 배출구를 통해서 외부로 배출될 때 반응챔버 아랫부분에 증착되어 이 부분이 파티클 발생 소스(source)로 작용하는 문제가 있다.In the conventional CVD apparatus, a gas outlet for discharging gas in the reaction chamber is mainly installed at the bottom of the reaction chamber. Therefore, when gases which do not contribute to the thin film deposition are discharged to the outside through the gas outlet is deposited on the lower portion of the reaction chamber there is a problem that this portion serves as a particle generation source (source).

따라서, 본 발명이 이루고자 하는 기술적 과제는, 박막증착에 기여하지 못한 기체들이 반응챔버의 내벽에 접하는 기회를 최소화시키므로써, 파티클 발생을 최소화시킴과 동시에 장비정검주기를 연장시킬 수 있는 CVD 장치를 제공하는 데 있다.Accordingly, the technical problem to be achieved by the present invention is to provide a CVD apparatus capable of minimizing particle generation and extending equipment inspection cycles by minimizing the chance of gases that do not contribute to thin film deposition contacting the inner wall of the reaction chamber. There is.

도 1은 본 발명에 따른 CVD 장치를 설명하기 위한 개략도이다.1 is a schematic view for explaining a CVD apparatus according to the present invention.

< 도면의 주요 부분에 대한 참조번호의 설명 ><Description of Reference Numbers for Main Parts of Drawings>

10: 반응챔버 20: 석영돔10: reaction chamber 20: quartz dome

30: 벨자 40: 벨자히터30: Belza 40: Belzaheater

50: 웨이퍼 지지대 52: 지지축50: wafer support 52: support shaft

60: 웨이퍼 70: 기체 포커스 링60: wafer 70: gas focus ring

72: 분사공 74: 기체공급라인72: injection hole 74: gas supply line

80: 기체 배출구 82: 펌핑라인80: gas outlet 82: pumping line

85: 차단막 90: 퍼지기체 공급구85: membrane 90: purge gas supply port

상기 기술적 과제를 달성하기 위한 본 발명에 따른 CVD 장치는, 화학기상증착 공정이 진행되는 반응챔버; 상기 반응챔버 내부에 설치되며 웨이퍼가 안착되어지는 웨이퍼 지지대; 상기 웨이퍼 지지대 주위로부터 상기 웨이퍼 지지대의 상부공간 중심부로 공정기체를 분사하도록 상기 반응챔버 측면부에 설치되는 기체 포커스 링; 상기 반응챔버 내부로 퍼지기체를 공급하기 위하여 상기 반응챔버 저면에 설치되는 퍼지기체 공급구; 및 상기 기체 포커스 링을 통하여 분사되는 공정기체 및 상기 퍼지기체 공급구를 통해서 공급되는 퍼지기체를 배출시키기 위하여 상기 기체 포커스 링보다는 하부에 위치하면서 상기 반응챔버의 저면으로부터 소정 간격 떨어져서 위치하도록 상기 반응챔버의 측벽에 설치되는 기체 배출구; 를 구비하는 것을 특징으로 한다.CVD apparatus according to the present invention for achieving the above technical problem, the reaction chamber is a chemical vapor deposition process is carried out; A wafer support installed in the reaction chamber and on which a wafer is seated; A gas focus ring installed at a side surface of the reaction chamber to inject a process gas from around the wafer support to the center of the upper space of the wafer support; A purge gas supply port provided at a bottom of the reaction chamber to supply a purge gas into the reaction chamber; And the reaction chamber positioned below the bottom of the reaction chamber while being disposed below the gas focus ring to discharge the process gas injected through the gas focus ring and the purge gas supplied through the purge gas supply port. A gas outlet installed at a side wall of the gas outlet; Characterized in having a.

여기서, 상기 기체 배출구를 통해서 배출되는 공정기체와 퍼지기체가 상기 기체 배출구 부위에서 서로 혼합되지 않도록 상기 기체 배출구 중간부분에 위치하도록 상기 기체 배출구에 수평하게 차단막을 더 설치하는 것이 바람직하다.Here, it is preferable to further provide a barrier film horizontally on the gas outlet so that the process gas and the purge gas discharged through the gas outlet are located in the middle of the gas outlet so that they are not mixed with each other at the gas outlet.

그리고, 상기 기체 배출구는 상기 웨이퍼 지지대와 같은 높이에 설치되는 것이 바람직하다.In addition, the gas discharge port is preferably installed at the same height as the wafer support.

이하에서, 본 발명의 바람직한 실시예를 첨부한 도면을 참조하여 상세히 설명한다.Hereinafter, with reference to the accompanying drawings, preferred embodiments of the present invention will be described in detail.

도 1은 본 발명에 따른 CVD 장치를 설명하기 위한 개략도이다. 도 1을 참조하면, 반응챔버(10)는 웨이퍼가 한장씩 장입되는 매엽식 반응챔버이고, 반응챔버(10)의 상부는 석영돔(20)으로 이루어진다. 석영돔(20) 외측에는 석영돔(20)을 덮는 벨자(30)가 설치되며 벨자(30) 내측에는 석영돔(20)을 덮도록 벨자히터(40)가 설치된다. 반응챔버(10) 내부에는 웨이퍼 지지대(50)가 설치되며, 웨이퍼(60)는 웨이퍼 지지대(50) 상에 놓여진다.1 is a schematic view for explaining a CVD apparatus according to the present invention. Referring to FIG. 1, the reaction chamber 10 is a single-leaf reaction chamber in which wafers are loaded one by one, and an upper portion of the reaction chamber 10 includes a quartz dome 20. A bell jar 30 covering the quartz dome 20 is installed outside the quartz dome 20, and a bell jar heater 40 is installed inside the bell jar 30 to cover the quartz dome 20. The wafer support 50 is installed in the reaction chamber 10, and the wafer 60 is placed on the wafer support 50.

웨이퍼 지지대(50)에는 웨이퍼(60)를 화학기상증착이 일어날 수 있는 적절한 온도로 가열하기 위한 메인 히터(미도시)가 설치된다. 웨이퍼 지지대(50)는 지지축(52)에 의해 지지되는데, 지지축(52)은 벨로우즈(55)로 둘러싸여져 벨로우즈(55)에 의해 지지축(52)이 상하 이송되더라도 외부와 반응챔버(10) 내부는 밀폐 상태를 유지하게 된다.The wafer support 50 is provided with a main heater (not shown) for heating the wafer 60 to an appropriate temperature at which chemical vapor deposition can occur. The wafer supporter 50 is supported by the support shaft 52. The support shaft 52 is surrounded by the bellows 55 so that the support shaft 52 is vertically transferred by the bellows 55 even though the reaction chamber 10 The inside is kept sealed.

기체 포커스 링(70)은 웨이퍼 지지대(50) 측면을 둘러싸도록 반응챔버(10) 측면부에 설치된다. 기체 포커스 링(70)에는 복수개의 분사공(72)이 형성되어 있다. 분사공(72) 대신에 환형의 분사링이 형성될 수도 있다.The gas focus ring 70 is installed at the side surface of the reaction chamber 10 to surround the side surface of the wafer support 50. A plurality of injection holes 72 are formed in the gas focus ring 70. Instead of the injection hole 72, an annular injection ring may be formed.

반응챔버(10)의 저면에는 반응챔버(10) 내부로 N2 또는 Ar 등의 퍼지기체를 공급하기 위한 퍼지기체 공급구(90)가 설치된다.A purge gas supply port 90 for supplying a purge gas such as N2 or Ar into the reaction chamber 10 is installed at the bottom of the reaction chamber 10.

반응챔버(10)의 측면에는 기체 포커스 링(70)을 통하여 분사되는 공정기체 및 퍼지기체 공급구(90)를 통해서 공급되는 퍼지기체를 배출시키기 위한 기체 배출구(80)가 설치된다. 기체 배출구(80)는 기체 포커스 링(70)보다는 하부에 위치하며 환형 홈의 형태로 형성된다. 기체 배출구(80)는 반응챔버(10)의 저면으로부터 소정 간격 떨어져서 위치하는데, 웨이퍼 지지대(50)보다 약간 아래에 설치되는 것이 바람직하다.Side of the reaction chamber 10 is provided with a gas discharge port 80 for discharging the process gas injected through the gas focus ring 70 and the purge gas supplied through the purge gas supply port 90. The gas outlet 80 is located below the gas focus ring 70 and is formed in the form of an annular groove. The gas outlet 80 is located at a predetermined distance from the bottom of the reaction chamber 10, and is preferably installed slightly below the wafer support 50.

기체 배출구(80)에서 공정기체와 퍼지기체가 서로 혼합되지 않도록 기체 배출구(80) 중간부분에는 차단막(85)이 수평하게 설치된다. 따라서, 퍼지기체 공급구(90)를 통해서 주입되는 퍼지기체는 차단막(85)의 아래부분을 통하여 기체 배출구(80)로 배출되고, 기체 포커스 링(70)을 통해서 주입되는 공정기체는 차단막(85)의 윗부분을 통해서 기체 배출구(80)로 배출된다.The blocking film 85 is horizontally installed at the middle portion of the gas outlet 80 so that the process gas and the purge gas are not mixed with each other at the gas outlet 80. Therefore, the purge gas injected through the purge gas supply port 90 is discharged to the gas outlet 80 through the lower portion of the barrier film 85, and the process gas injected through the gas focus ring 70 is blocked. Through the upper portion of the) is discharged to the gas outlet (80).

기체 배출구(80)는 차단막(85)에 의하여 상하 공간으로 분리되기는 하지만 완전히 분리되는 것이 아니라 차단막(85)의 끝부분에서는 이러한 상하공간이 연결되도록 설치된다. 기체 배출구(80)로 들어온 공정기체 및 퍼지기체는 진공펌프와 연결되는 하나의 펌핑라인(82)을 통하여 외부로 배출된다.Although the gas outlet 80 is separated into the up and down space by the blocking film 85, the gas outlet 80 is not completely separated, but is installed at the end of the blocking film 85 so that the up and down space is connected. Process gas and purge gas entering the gas outlet 80 is discharged to the outside through one pumping line 82 is connected to the vacuum pump.

기체공급라인(74)을 통하여 기체 포커스 링(70)에 공정기체를 주입하면, 공저기체는 분사공(72)을 통하여 웨이퍼 지지대(50) 주위로부터 웨이퍼 지지대(50)의 상부공간 중심부로 분사된다. 웨이퍼 지지대(50)의 상부공간 중심부로 분사된 공정기체는 벨자히터(40)에 의하여 가열되고 있는 석영돔(20)에 부딪혀서 열분해되면서 웨이퍼 지지대(50) 상부공간에 골고루 분포된다. 따라서, 웨이퍼(60)가 대구경일지라도 웨이퍼(60) 전면에 균일한 화학기상증착이 일어난다.When the process gas is injected into the gas focus ring 70 through the gas supply line 74, the co-substrate gas is injected from the periphery of the wafer support 50 to the center of the upper space of the wafer support 50 through the injection hole 72. . The process gas injected into the center of the upper space of the wafer support 50 is uniformly distributed in the upper space of the wafer support 50 while being thermally decomposed by hitting the quartz dome 20 being heated by the bell heater. Therefore, even if the wafer 60 is large in diameter, uniform chemical vapor deposition occurs on the entire surface of the wafer 60.

화학기상증착에 관여하지 못한 잔류 공정기체는 기체 배출구(80)를 통하여 외부로 배출된다. 이 때, 공정기체가 반응챔버(10)의 아랫부분으로 내려오지 못하도록 퍼지기체 공급구(90)를 통하여 퍼지기체를 적절한 유속으로 공급한다. 물론, 공정기체의 압력에 의하여 퍼지기체도 반응챔버(10)의 윗부분으로 올라갈 수 없도록해야 한다.Residual process gas not involved in chemical vapor deposition is discharged to the outside through the gas outlet (80). At this time, the purge gas is supplied at an appropriate flow rate through the purge gas supply port 90 to prevent the process gas from descending to the lower portion of the reaction chamber 10. Of course, purge gas should not be able to rise to the upper portion of the reaction chamber 10 by the pressure of the process gas.

공정기체는 퍼지기체의 공급에 의하여 웨이퍼 지지대(50)의 하부공간으로 내려오지 못하므로, 웨이퍼 지지대(50), 지지축(52), 및 반응챔버(10)의 아랫부분 내벽에 박막이 증착되는 것이 방지된다. 퍼지기체 역시 웨이퍼 지지대(50) 상부공간으로 올라갈 수 없으므로 화학기상증착에 영향을 미치지 않게 되어 퍼지기체에 의하여 박막의 균일도 및 증착속도가 영향을 받는 현상은 나타나지 않는다. 차단막(85)의 설치에 의하여 이러한 효과들은 더욱 크게 나타난다.Since the process gas is not lowered to the lower space of the wafer supporter 50 by the supply of the purge gas, a thin film is deposited on the inner wall of the lower part of the wafer supporter 50, the support shaft 52, and the reaction chamber 10. Is prevented. Since the purge gas cannot rise to the upper space of the wafer supporter 50, the purge gas does not affect chemical vapor deposition, and thus the uniformity and deposition rate of the thin film are not affected by the purge gas. By installing the blocking film 85, these effects are even greater.

상술한 바와 같이 본 발명은, 공정기체가 반응챔버(10) 하부공간으로 내려오지 못하도록 반응챔버 저면에서 퍼지기체를 공급함과 동시에 기체 배출구(80)를 웨이퍼 지지대(50)와 비슷한 높이에 있는 반응챔버(10)의 측벽에 설치하는 것을 특징으로 한다. 따라서, 본 발명에 의하면, 공정기체가 반응챔버(10)의 하부공간에서 증착되는 것을 방지할 수 있어 파티클 발생을 최소화시킬 수 있을 뿐만 아니라 장비의 정검주기를 연장시킬 수 있다. 이 때, 퍼지기체는 반응챔버(10)의 상부공간으로 올라가지 못하므로 퍼지기체에 의하여 화학기상증착공정이 영향을 받지는 않는다. 상기의 효과들은 차단막(85)을 설치하여 2단 펌핑구조를 취하므로써 더욱 크게 나타난다.As described above, the present invention provides a purge gas at the bottom of the reaction chamber to prevent the process gas from lowering into the reaction chamber 10 and at the same time the gas outlet 80 is at a height similar to that of the wafer support 50. It is provided in the side wall of 10. It is characterized by the above-mentioned. Therefore, according to the present invention, the process gas can be prevented from being deposited in the lower space of the reaction chamber 10, thereby minimizing particle generation and extending the inspection cycle of the equipment. At this time, since the purge gas does not rise to the upper space of the reaction chamber 10, the chemical vapor deposition process is not affected by the purge gas. The above effects are further increased by providing a two-stage pumping structure by installing the blocking film 85.

본 발명은 상기 실시예에만 한정되지 않으며, 본 발명의 기술적 사상 내에서 당 분야에서 통상의 지식을 가진 자에 의해 많은 변형이 가능함은 명백하다.The present invention is not limited to the above embodiments, and it is apparent that many modifications are possible by those skilled in the art within the technical spirit of the present invention.

Claims (6)

화학기상증착 공정이 진행되는 반응챔버;A reaction chamber in which a chemical vapor deposition process is performed; 상기 반응챔버 내부에 설치되며 웨이퍼가 안착되어지는 웨이퍼 지지대;A wafer support installed in the reaction chamber and on which a wafer is seated; 상기 웨이퍼 지지대 주위로부터 상기 웨이퍼 지지대의 상부공간 중심부로 공정기체를 분사하도록 상기 반응챔버 측면부에 설치되는 기체 포커스 링;A gas focus ring installed at a side surface of the reaction chamber to inject a process gas from around the wafer support to the center of the upper space of the wafer support; 상기 반응챔버 내부로 퍼지기체를 공급하기 위하여 상기 반응챔버 저면에 설치되는 퍼지기체 공급구; 및A purge gas supply port provided at a bottom of the reaction chamber to supply a purge gas into the reaction chamber; And 상기 기체 포커스 링을 통하여 분사되는 공정기체 및 상기 퍼지기체 공급구를 통해서 공급되는 퍼지기체를 배출시키기 위하여 상기 기체 포커스 링보다는 하부에 위치하면서 상기 반응챔버의 저면으로부터 소정 간격 떨어져서 위치하도록 상기 반응챔버의 측벽에 설치되는 기체 배출구; 를 구비하는 것을 특징으로 하는 CVD 장치.In order to discharge the process gas injected through the gas focus ring and the purge gas supplied through the purge gas supply port, the reaction chamber is positioned below the bottom of the reaction chamber while being located below the gas focus ring. A gas outlet installed at the side wall; CVD apparatus comprising a. 제1항에 있어서, 상기 기체 배출구를 통해서 배출되는 공정기체와 퍼지기체가 상기 기체 배출구 부위에서 서로 혼합되지 않도록 상기 기체 배출구 중간부분에 위치하도록 상기 기체 배출구에 수평하게 설치되는 차단막을 더 구비하는 것을 특징으로 하는 CVD 장치.According to claim 1, Process gas discharged through the gas outlet and the purge gas is further provided with a barrier film installed horizontally on the gas outlet so that the gas outlet is located in the middle portion of the gas outlet so as not to mix with each other. CVD apparatus. 제1항에 있어서, 상기 기체 배출구가,The gas outlet of claim 1, 상기 반응챔버의 측면을 따라 형성된 환형홈과,An annular groove formed along a side of the reaction chamber; 상기 환형홈과 진공펌프를 서로 연결하는 하나의 펌핑라인;을 포함하여 이루어지는 것을 특징으로 하는 CVD 장치.And a pumping line connecting the annular groove and the vacuum pump to each other. 제1항에 있어서, 상기 반응챔버는 상부가 석영돔으로 이루어지고, 상기 석영돔 외측에는 상기 석영돔을 덮도록 벨자히터가 설치되는 것을 특징으로 하는 CVD 장치.The CVD apparatus according to claim 1, wherein the reaction chamber is formed of a quartz dome on an upper portion thereof, and a bell jar heater is installed outside the quartz dome to cover the quartz dome. 제1항에 있어서, 상기 반응챔버는 웨이퍼가 한장씩 장입되는 매엽식 반응챔버이고, 상기 웨이퍼 지지대는 1개 설치되는 것을 특징으로 하는 CVD 장치.The CVD apparatus according to claim 1, wherein the reaction chamber is a single wafer reaction chamber into which wafers are loaded one by one, and one wafer support is provided. 제1항에 있어서, 상기 기체 배출구가 상기 웨이퍼 지지대와 같은 높이에 설치되는 것을 특징으로 하는 CVD 장치.The CVD apparatus according to claim 1, wherein the gas outlet is provided at the same height as the wafer support.
KR10-2001-0073336A 2001-11-05 2001-11-23 Apparatus for Chemical Vapor Deposition KR100445814B1 (en)

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KR20010048976A (en) * 1999-11-30 2001-06-15 김필규 A fluctuation control system for the process of APCVD and epitaxial
KR20010082109A (en) * 2000-02-10 2001-08-29 엔도 마코토 Substrate processing apparatus and substrate processing method
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JPH05190471A (en) * 1992-01-16 1993-07-30 Tokyo Electron Ltd Treatment apparatus for forming film
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