KR20090009571A - Semiconductor apparatus of furnace type - Google Patents

Abstract

A furnace type semiconductor device is provided to dispose a spray unit of a nozzle member spirally in a process tube, thereby providing uniform gas distribution within the process tube. A furnace type semiconductor device comprises a process tube(100), a wafer boat(200) located within the process tube, and a nozzle member(400) spraying process gas to wafers laminated in the wafer boat. The nozzle member further comprises a plurality of spray units(410a,410b) spirally arranged along an inner side of the process tube in order to spray different process gas, and a plurality of introduction units(420a,420b) receiving the process gas and respective providing the process gas to the plurality of spray units. The plurality of spray units is fixed to the inner side of the process tube. The plurality of spray units comprise spray holes for spraying the process gas between wafers placed in the wafer boat. The area of the spray holes becomes bigger as being distant from the introduction portion.

Description

Furnace Semiconductor Equipment {Semiconductor Apparatus of Furnace Type}

1 is a cross-sectional view showing a schematic configuration of a furnace-type semiconductor device according to an embodiment of the present invention.

2 is a view showing a process tube provided with a nozzle member installed in the process tube.

3 is a view illustrating a nozzle member in which process gas is injected to a substrate.

4A and 4B are views showing the jet of the nozzle member fixed to the inner side of the process tube.

5 and 6 are views showing a process tube in which the injection unit is formed integrally.

Explanation of symbols on the main parts of the drawings

100: process tube

200: wafer boat

300: heater

400: nozzle member

410 injection section

420: introduction

The present invention relates to a semiconductor manufacturing apparatus, and more particularly to a furnace type semiconductor equipment.

Recently, the manufacturing technology of semiconductor devices has been developed to improve the degree of integration, reliability, response speed, etc. in order to satisfy various needs of consumers. In general, a semiconductor device is manufactured by forming a pattern having electrical characteristics by performing a deposition process, a diffusion process, a photo and an etching process on a silicon wafer.

In the manufacture of semiconductor devices, low pressure chemical vapor deposition processes and diffusion processes are typically carried out in longitudinal furnaces. Specifically, the furnace type semiconductor equipment includes a heater tube and an outer tube and an inner tube made of quartz in the heater block. In addition, a boat for loading wafers is provided in the inner tube, and a plurality of wafers loaded on the boat are introduced into a process space, that is, a process chamber at one time, to perform a deposition or diffusion process.

When the process is performed using the furnace type semiconductor equipment, the process variation is very large according to the gas distribution in the equipment. Therefore, it is very important to supply the equipment so that the gas distribution in the entire area in which the process is performed, that is, the process chamber, is almost uniform.

In the furnace type semiconductor equipment, since the process gas is supplied through the nozzle located at the bottom, a difference in gas concentration occurs at the bottom and the top of the process chamber, so that it is difficult to deposit a uniform film. In particular, the inner tube must be provided for gas flow. The structure is complicated and there is a problem of maintenance management.

It is an object of the present invention to provide a furnace type semiconductor installation having a uniform gas distribution.

It is an object of the present invention to provide a furnace type semiconductor equipment consisting of a single tube.

Furnace-type semiconductor equipment for achieving the above object is a process tube; A wafer boat positioned within the process tube; A nozzle member for injecting a process gas into the wafers loaded on the wafer boat; The nozzle member includes a plurality of injection parts disposed spirally along the inner surface of the process tube to inject different process gases.

According to an embodiment of the present invention, the plurality of sprays are fixed to the inner side of the process tube.

According to an embodiment of the present invention, the process tube further includes fixing members for fixing the plurality of injection parts on the inner surface.

According to an embodiment of the present invention, the plurality of jetting parts may include injection holes for injecting process gas between wafers placed on the wafer boat.

According to an exemplary embodiment of the present invention, the injector includes an injection hole for injecting a gas by giving an angle in an upper or lower direction of the injector or injecting a process gas by adjusting a gas injection direction in combination.

According to an embodiment of the present invention, the nozzle member further includes a plurality of introduction parts installed in the nozzle port formed in the process tube and receiving the process gas from an external supply line and respectively supplying the process gas to the plurality of injection parts.

According to an embodiment of the present invention, the plurality of jetting portions include injection holes for injecting a process gas between wafers placed on the wafer boat; As the injection holes move away from the introduction portion, the opening area increases.

According to an embodiment of the present invention, the process tube further includes an exhaust port connected to the exhaust line to reduce the exhaust of the process gas supplied into the process and the inside during the process.

According to an embodiment of the present invention, the nozzle member is formed integrally with the process tube.

Furnace-type semiconductor equipment for achieving the above object is a process tube; A heater block for heating the inside of the process tube outside the process tube; A wafer boat positioned within the process tube; A nozzle member for injecting a process gas into the wafers loaded on the wafer boat; The nozzle member is fixed to the inner surface of the process tube in the form of a spiral, the first, second injection unit for injecting different process gases; And

And first and second introduction parts installed in the nozzle port formed in the process tube and receiving the process gas from an external supply line and supplying the process gas to the first and second injection parts, respectively.

According to an embodiment of the present invention, the first and second injection units include injection holes for injecting a process gas between wafers placed on the wafer boat.

Furnace-type semiconductor equipment for achieving the above object is a process tube; A wafer boat located within said process tube; The process tube has first and second injection parts provided in a spiral form along an inner side surface for injecting different process gases to wafers loaded on the wafer boat.

Furnace-type semiconductor equipment for achieving the above object is a process tube; And a wafer boat positioned within the process tube; The process tube is formed in a spiral form on the side and a plurality of passages through which different process gases flow; A plurality of supply ports for supplying different process gases to each of the plurality of passages; The inner surface has injection holes communicating with the plurality of passages for injecting the process gas provided through the plurality of passages into the wafers loaded on the wafer boat.

According to an embodiment of the present invention, the wafer boat has a seal cap for sealing with the process tube.

For example, embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited by the embodiments described below. This embodiment is provided to more completely explain the present invention to those skilled in the art. Accordingly, the shape of the elements in the drawings and the like are exaggerated to emphasize a clearer description.

An embodiment of the present invention will be described in detail with reference to FIGS. 1 to 6. In addition, in the drawings, the same reference numerals are denoted together for components that perform the same function.

The basic feature of the present invention is that a spiral nozzle member is installed on the inner surface of the process tube in order to have a uniform gas distribution.

1 is a cross-sectional view showing a schematic configuration of a furnace-type semiconductor device according to an embodiment of the present invention. 2 is a view showing a process tube provided with a nozzle member installed in the process tube. 3 is a view illustrating a nozzle member in which process gas is injected into a wafer.

As shown in FIGS. 1 to 3, the furnace type semiconductor facility 10 of the present invention includes a process tube 100, a wafer boat 200, a heater 300 and a nozzle member 400.

Process tube

Process tube 100 is made of a cylindrical tube shape of the dome shape. The process tube 100 provides an internal space in which a wafer boat 200 loaded with a wafer w is loaded and chemical vapor deposition (thin film deposition process, diffusion process, etc.) is performed on the wafers. Process tube 100 may be made of a material that can withstand high temperatures, such as quartz. The process tube 100 includes first and second nozzle ports 110a and 110b for mounting the nozzle member 400 for injecting process gas into the process tube 100 at one side of the lower end, and inside the process tube 100. An exhaust port 120 for forcibly sucking and evacuating the internal air is provided to reduce the pressure. The exhaust port 120 is provided to exhaust air in the process tube 100 to the outside during the process. The exhaust port 120 is connected to the exhaust line, and exhaust and internal pressure reduction of the process gas supplied to the process tube 100 through the exhaust port 120 are performed.

In the present exemplary embodiment, the process tube 100 is provided with the first and second nozzle ports 110a and 110b separately, but holes through which the inlet 420 of the nozzle member 400 penetrates are formed in the process tube 100. In addition, the introduction parts 420 may be inserted into the holes, and then may be completely fixed and sealed by welding.

As described above, according to the present invention, since the process tube 100 includes the exhaust port 120 and the nozzle port 110, a separate flange member may be omitted.

Wafer boat

The wafer boat has slots into which 25 or 50 (or more) wafers are inserted. The wafer boat is mounted on the seal cap, and the seal cap 210 is loaded into the process tube 100 or unloaded out of the process tube 100 by a driver 230 which is an elevator device. Once the wafer boat is loaded into the process tube 100, the seal cap is engaged with the flange 130 of the process tube 100. Meanwhile, a sealing member such as an O-ring 212 for sealing is provided at a portion where the flange 130 and the seal cap 210 of the process tube 100 come into contact with each other so that the process gas is processed. Do not leak between the tube 100 and the seal cap 210.

Nozzle member

The nozzle member 400 includes first and second injection parts 410a and 410b for injecting different process gases into wafers loaded on the wafer boat 200 and first and second nozzle ports 110a and 110b. Between the first and second introduction parts 420a and 420b and the first and second injection parts 410a and 410b and the first and second introduction parts 420a and 420b installed and provided with a process gas from an external supply line 500. It includes first and second connecting portion (430a, 430b) for connecting. As described above, the nozzle member 400 can inject different process gases onto the wafers, and the nozzle member 400 in this manner will be well suited for the process of depositing an atomic layer.

First, the first and second introduction parts 420a and 420b are inserted and fixed to the first and second nozzle ports 110a and 110b, respectively, and the outer circumferential surface thereof may have a quadrangular shape. Naturally, the first and second nozzle ports 110a and 110b may be processed into a quadrangular shape into which the first and second introduction parts 420a and 420b may be inserted, thereby preventing any rotation of the first and second introduction parts 420a and 420b. The installation work can be facilitated. For example, the first and second introduction parts 420a and 420b may have at least one plane or may be shaped into a polygonal structure such as a 5 angle, a 6 angle, and the like. One end of the first and second introduction parts 420a and 420b extends to the outside through the first and second nozzle ports 110a and 110b and is connected to an external supply line 500.

The first and second connection parts 430a and 430b correspond to the bent portion between the first and second injection parts 420a and 420b and the first and second injection parts 410a and 410b, and the first and second injection parts 410a. 410b) may serve as a reinforcing bar to prevent sag. Of course, no sag occurs because the first and second injection parts 410a and 410b are fixed to the inner surface 102 of the process tube 100, but the first and second injection parts 410a and 410b are the process tubes. It is supported by the first and second connectors 430a and 430b until it is fixed to the inner side surface 102 of the 100.

As described above, the nozzle member 400 processes a portion fixed to the process tube and a portion bent at a right angle into a polygon, so that the first and second nozzle ports of the process tube 100 at once, regardless of the skill of the operator. Can be inserted and fixed to (110a, 110b).

Meanwhile, the first and second injection parts 410a and 410b are disposed in a spiral shape (coil) along the inner side surface 102 of the process tube 100. The first and second injection parts 410a and 410b of the nozzle member 400 are fixed to the inner side surface 102 of the process tube 100. The helical coil can be configured more densely or vice versa by adjusting the distance between pitches according to conditions such as process.

4A and 4B are views showing the jet of the nozzle member fixed to the inner side of the process tube.

As shown in FIG. 4A, the first and second injection parts 410a and 410b may be fixed to the inner surface 102 of the process tube 100 by welding, and the inside of the process tube 100 may be fixed as shown in FIG. 4B. It may be fixed by the fixing members 104 installed on the side surface (102). The first and second injection parts 410a and 410b have injection holes 412 for injecting a process gas between the wafers placed on the wafer boat 200. The process gas is injected into the space between the wafer and the wafer through the injection holes 412. In particular, it is preferable that the injection holes 412 increase the opening area as they move away from the first and second introduction parts 420a and 420b to enable a uniform gas supply as a whole. In addition, the injection holes 412 may be configured more densely or vice versa by adjusting the interval according to the process conditions.

In addition, the injection holes 412 may angle the gas injection direction to the center direction of the process tube 100 or the upper or lower direction of the injection unit 410 according to the process conditions to inject gas or adjust the gas injection direction in combination. Can be configured.

As described above, the first and second injection parts 410a and 410b of the nozzle member 400 are spirally disposed in the process tube 100 to process the wafers positioned at the bottommost and topmost positions of the wafer boat 200. Gas can be injected directly. In particular, as shown in FIG. 3, the first and second injection parts 410a and 410b surround the wafer boat 200 and inject the process gas in 360 degree directions to provide uniform gas distribution inside the process tube 100. Can provide. In addition, the inner tube can be omitted by providing the process gas uniformly to the wafers.

The heater 300 provides a predetermined heat to the process tube 100 outside the process tube 100 to maintain the temperature inside the process tube 100 required for the process. To this end, the heater 300 is provided with a control unit (not shown) outside the facility 10, the control unit senses the temperature of the process tube 100, the temperature of the process tube 100 is below the temperature required for the process When down to the heater 300 is controlled to heat the process tube (100).

Modification example

In the furnace type semiconductor equipment of the present invention, the nozzle member may also be implemented with the following alternative variants.

5 and 6 are views showing an example in which the injection portion of the nozzle member is integrally formed on the inner surface of the process tube.

As shown in FIG. 5, the process tube 100a may include first and second injection parts 180a and 180b provided in a spiral form along an inner side surface to inject process gas into wafers loaded on the wafer boat 200. Have The first and second injection parts 180a and 180b may include a passage 182 formed in the form of a spiral on the side surface of the process tube 100, and a wafer loaded with the process gas provided through the passage 182 in the wafer boat 200. There are injection holes 184 in communication with the passage 182 on the inner side for spraying into the furnace. The process tube 100a has first and second supply ports 186a and 186b connected to an external supply line 500 at a lower end thereof to provide process gas to respective passages.

In the present modified example, the first and second injection parts 180a and 180b protrude to the inner surface of the process tube 100a. However, as shown in FIG. 6, the first inner surface of the process tube 100a is formed to be flat. The two injection units 180a and 180b may be implemented, and in this case, the gas flow in the process tube 100a may be more smoothly performed.

The furnace type semiconductor facility of the present invention may be configured to perform various wafer processing operations. For example, it may be a chemical vapor deposition (CVD) chamber configured to deposit an insulating film, and an etch chamber configured to etch apertures or openings in the insulating film to form interconnect structures. Or a PVD chamber configured to deposit a barrier film, and may be a PVD chamber configured to deposit a metal film. Or a chamber for depositing an atomic layer or a diffusion chamber.

In the above, the configuration and operation of the furnace-type semiconductor equipment according to the present invention is shown in accordance with the above description and drawings, but this is just described, for example, and various changes and modifications can be made without departing from the technical spirit of the present invention. Of course.

As described above, the present invention can omit a separate flange member because the process tube includes an exhaust port and a nozzle port.

According to the present invention, the ejection portion of the nozzle member is helically disposed in the process tube so that the process gas may be directly injected to each of the wafers positioned at the lowermost to uppermost portions of the wafer boat.

In particular, the present invention can provide a uniform gas distribution inside the process tube by injecting the process gas 360 degrees around the wafer boat around. The present invention can omit the inner tube by providing the process gas uniformly to the wafers, thereby simplifying the structure and increasing the efficiency of maintenance.

Claims (13)

In furnace type semiconductor equipment: Process tubes; A wafer boat positioned within the process tube; A nozzle member for injecting a process gas into the wafers loaded on the wafer boat; The nozzle member is a furnace type semiconductor equipment, characterized in that it comprises a plurality of spraying which is arranged spirally along the inner surface of the process tube for injecting different process gas. The method of claim 1, The plurality of injection portion Furnace type semiconductor equipment, characterized in that fixed to the inner surface of the process tube. The method of claim 1, The process tube Furnace-type semiconductor equipment characterized in that it further comprises a fixing member for fixing the plurality of injection portion on the inner surface. The method of claim 1, And the plurality of jetting parts include injection holes for injecting a process gas between wafers placed on the wafer boat. The method of claim 1, The nozzle member is Furnace type semiconductor equipment characterized in that it further comprises a plurality of inlet portion which is provided in the nozzle port formed in the process tube and receives the process gas from the external supply line to provide to the plurality of injection portion, respectively. The method of claim 1, The plurality of spraying portions include spraying holes for injecting a process gas between wafers placed on the wafer boat; Furnace-type semiconductor equipment characterized in that the area is larger as the injection holes away from the introduction portion. The method of claim 1, The process tube further comprises an exhaust port connected to the exhaust line so as to reduce the exhaust of the process gas supplied to the inside during the process and the process during the furnace type semiconductor equipment. The method of claim 1, The nozzle member is Furnace-type semiconductor equipment characterized in that formed integrally with the process tube. In furnace type semiconductor equipment: Process tubes; A heater block for heating the inside of the process tube outside the process tube; A wafer boat positioned within the process tube; A nozzle member for injecting a process gas into the wafers loaded on the wafer boat; The nozzle member is First and second injection parts fixedly installed along an inner surface of the process tube in a spiral shape and spraying different process gases; And Furnace type semiconductor, characterized in that it comprises a first and second introduction portion which is installed in the nozzle port formed in the process tube and receives the process gas from the external supply line to provide to each of the first and second injection portion. The method of claim 9, And the first and second injection parts include injection holes for injecting a process gas into the wafers placed on the wafer boat. In furnace type semiconductor equipment: Process tubes; A wafer boat located within said process tube; The process tube Furnace type semiconductor equipment characterized in that it has a first, second injection portion provided in a spiral form along the inner surface for injecting different process gases to the wafers loaded on the wafer boat. In furnace type semiconductor equipment: Process tubes; And A wafer boat located within said process tube; The process tube A plurality of passages formed in a helical shape on the side and through which different process gases flow; A plurality of supply ports for supplying different process gases to each of the plurality of passages; And a plurality of injection holes communicating with the plurality of passages on the inner side surface for injecting the process gases provided through the plurality of passages into wafers loaded on the wafer boat. The method of claim 12, And the wafer boat has a seal cap for sealing with the process tube.

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