KR101243782B1 - Thin metal film depositing apparatus - Google Patents

Abstract

The present invention relates to a thin film deposition apparatus, the thin film deposition apparatus according to the present invention, a plurality of layers are laminated and combined with a sealing member in order to correct the defect site by supplying a source gas while irradiating a laser light in the case of substrate defect In the thin film deposition apparatus comprising a plurality of chambers, the chamber, the upper, lower chamber and each of the layers forming the sealing member are connected so that the laser light irradiation holes formed concentrically, provided in the lowermost layer of the chamber is the laser light irradiation A lower chamber in which an insertion hole is formed to be concentric with the hole, and an exhaust port is formed on the bottom surface of the insertion hole, and a purge gas discharge port is formed so that the inflow direction and the discharge direction are different from each other; A nozzle block inserted into the insertion hole of the lower chamber, the laser light irradiation hole being formed to be concentric with the laser light irradiation hole formed in the upper layer, and through which the source gas outlet for thin film deposition passes through the laser light irradiation hole; And a sealing member seated on an upper portion of the lower chamber and forming a connection hole connected to the exhaust port and the purge gas discharge port for each partial region.
It is possible to replace the nozzle block with different angles and diameters of the source gas outlet for thin film deposition according to the metal source and the process conditions, thereby reducing the speed and cost compared to newly manufacturing the lower chamber according to the metal source and the process conditions. When exhausting the source gas and purge gas can be ensured, and when the purge gas discharged for the air curtain effect discharge direction is inclined outwardly has the effect of maintaining a constant fluid flow inside the chamber.

Description

Thin Film Deposition Apparatus {THIN METAL FILM DEPOSITING APPARATUS}

The present invention relates to a thin film deposition apparatus, and more particularly, to a thin film deposition apparatus for supplying gas while irradiating laser light so that a thin film can be deposited and corrected on a defect site when a substrate defect occurs.

According to the "atmospheric pressure thin film deposition apparatus using a laser" (registration number: 10-0867738) filed by the applicant of the present application as shown in FIG. 1, the thin film deposition object (P) is spaced at a predetermined interval and disposed, A chamber having a window and a hole formed under the optical window, the hole being an empty space for accommodating a high pressure gas; Thin film deposition metal raw material storage unit for storing the thin film deposition metal raw material; When forming a metal thin film on the object, a protective film raw material storage unit for storing a protective film raw material for forming a protective film or insulating film on top of the metal thin film; A thin film deposition gas supply unit supplying a thin film deposition gas to the thin film deposition metal raw material storage unit to supply the thin film deposition metal raw material to the chamber; A protective film gas supply unit supplying a protective film gas to the protective film raw material storage unit to supply the protective film raw material to the chamber; The thin film is deposited on the object P by irradiating a laser to the chamber supplied with the thin film deposition metal raw material by the thin film deposition gas supply unit, and the laser is supplied to the chamber supplied with the protective film raw material by the protective gas gas supply unit. Laser irradiation device (R) for depositing a protective film on the metal thin film by irradiating; And an exhaust part connected to the chamber to pump the metal raw material and the high pressure gas supplied thereto. Including, but the chamber is composed of a removable upper chamber and the lower chamber, between the upper chamber and the lower chamber, a thin film deposition gas containing a thin film deposition metal raw material and a protective film gas containing a protective film material A first flow path forming plate and a second flow path forming plate having a flow path for supplying a to the object P and discharging residual metal and gas generated after thin film deposition, and the first and second flow path forming plates; It consists of a first sealing member, a second sealing member and a third sealing member formed on the connection portion of the upper chamber and the lower chamber, the thin film deposition gas and the protective film gas is injected into the lower chamber through the hole (hole) It has been proposed that the configuration is supplied to the object (P) through a laser beam.

And according to the 'applied gas injection device and method for metal thin film deposition' (published number: 10-2009-0028345) previously filed by the applicant of the present application, as shown in FIG. In the gas injection device for metal thin film deposition that is modified and laminated in a state where a plurality of layers are sealed, the gas injection device is provided at a lower portion of the heating part 500 provided at the top to heat the chamber 70, and has an optical window at the center thereof. A fourth layer 400 provided with 410; A third layer 300 provided below the fourth layer 400 and supplied with a purification gas to a central portion thereof; A second layer 200 provided below the third layer 300 to supply metal and insulating film source gas to a central portion thereof; And a first layer 100 disposed below the second layer 200 and spaced apart from the substrate S at set intervals. Has been proposed to include a configuration.

Atmospheric pressure thin film deposition apparatus using a laser according to the prior art and the gas injection device for depositing a metal thin film has a source gas outlet formed in the lower chamber (the first layer) when the raw material gas is supplied to the thin film deposition object (substrate) is lower chamber ( In order to change the angle and diameter of the source gas outlet in accordance with the metal source and the process conditions, the lower layer (the first layer) must be newly manufactured, thereby increasing the manufacturing cost.

In addition, when the protective gas is exhausted through the exhaust port of the lower chamber (first layer), the exhaust gas is more near the exhaust line, and the exhaust gas is less in the far part, and thus the exhaust gas cannot be uniformly exhausted. There was a problem in that it is not possible to obtain a uniform thin film deposition result.

In addition, since the protective gas that is sprayed to prevent damage to the surface of the thin film deposition object (substrate) when the thin film is deposited on the thin film deposition object (substrate) is sprayed in a direction perpendicular to the thin film deposition object (substrate), the direction of the fluid may not be known. Because of this, there was a problem that the fluid flow inside the chamber is not constant.

The present invention has been made to solve the above problems, the object of the present invention is that the angle and diameter of the source gas outlet for the thin film deposition can be replaced according to the metal source and the process conditions can be replaced by the metal source and the process conditions Accordingly, the lower chamber is reduced in speed and cost than a new one, and uniformity can be secured when exhausting raw gas and purge gas, and the discharge direction is inclined outward when purging gas for the air curtain effect. The present invention provides a thin film deposition apparatus that enables a constant flow of fluid inside a chamber.

In order to achieve the above object, the present invention provides a thin film deposition apparatus comprising a chamber in which a plurality of layers are laminated with a sealing member interposed so as to deposit a thin film by supplying a source gas while irradiating a laser light when a substrate defect, The chamber is connected to the laser light irradiation holes formed in each of the upper, lower chamber and each layer constituting the sealing member to be concentric, the insertion hole is formed to be concentric with the laser light irradiation hole provided in the lowermost layer of the chamber, A lower chamber having an exhaust port and a protective gas discharge port formed on the bottom surface of the insertion hole so that the inflow direction and the discharge direction are different from each other; A nozzle block inserted into the insertion hole of the lower chamber, the laser light irradiation hole being formed to be concentric with the laser light irradiation hole formed in the upper layer, and through which the source gas outlet for thin film deposition passes through the laser light irradiation hole; And a sealing member seated on an upper portion of the lower chamber and partially forming a connection hole connected to the protective gas outlet at the protective gas outlet.

In addition, the nozzle block in the present invention has one or more outlets, characterized in that it is provided to selectively replace any one of a plurality of different angle and diameter of the source gas outlet for the thin film deposition.

In addition, the thin film deposition source gas outlet in the present invention is characterized in that it is formed within an acute range on the basis of a horizontal plane.

In addition, the connection hole in the present invention is characterized in that the area is formed smaller or larger than the total area formed.

In addition, the protective gas outlet in the present invention is characterized in that the inclined in the outward direction in the vertical direction.

In addition, the inclination angle of the protective gas outlet in the present invention is characterized in that formed in the acute angle range.

In the thin film deposition apparatus of the present invention, the nozzle block having different angles and diameters of the source gas outlet for thin film deposition can be replaced according to the metal source and the process conditions, thereby newly manufacturing the lower chamber according to the metal source and the process conditions. In terms of speed and cost reduction, it is possible to ensure uniformity of exhaust of raw gas and purge gas, and to discharge the purge gas for the air curtain effect, the discharge direction is inclined outward so that the fluid flow inside the chamber is kept constant. It is effective.

1 is an exploded perspective view showing an atmospheric pressure thin film deposition apparatus using a conventional laser.
Figure 2 is a side cross-sectional view showing another conventional gas injection device for metal thin film deposition.
3 is a side sectional view showing a thin film deposition apparatus according to the present invention.
Figure 4 is an enlarged view showing the present invention and the conventional exhaust state in the thin film deposition apparatus.
5 is a side cross-sectional view of a nozzle block separated from the thin film deposition apparatus.

Hereinafter, an embodiment of the thin film deposition apparatus of the present invention will be described with reference to the accompanying drawings.

As shown in FIG. 3, the thin film deposition apparatus according to an exemplary embodiment of the present invention includes upper and lower chambers 110 and 170, first and second intervening members 130 and 150, and first, second and third sealing members. Chamber 100 including the 120, 140, 160 and the nozzle block 180, purge gas supply unit (not shown), exhaust means (not shown), shield gas supply unit (in the drawing) Not shown) and source gas supply unit (not shown).

The upper chamber 110 has a plate shape, and at one end, a laser light irradiation hole 112, which is a passage of a laser generated from a laser generator (not shown), is formed, and an optical beam is formed at an upper end of the laser light irradiation hole 112. The window 114 is fixed with a fixing member and a fixing screw, and a heating unit (not shown) is provided on an upper surface thereof to be operated by an applied power source to maintain the chamber 100 at a set temperature when the thin film is deposited.

The first sealing member 120 is provided on the bottom surface of the upper chamber 110 to maintain the airtight between the upper chamber 110 and the first intervention member 130, the upper chamber 110 Holes connected to the laser light irradiation holes 112 are formed at one end.

The first intervention member 130 is a plate provided on the bottom surface of the first sealing member 120, the laser light irradiation hole 132 connected to the laser light irradiation hole 112 of the upper chamber 110 is It is formed at one end. In addition, the first intervention member 130 has a step 134 formed at an inner edge of the purge gas discharge port 136 formed in the shape of a circular groove in the upper portion of the laser light irradiation hole 112. At this time, the step 134 is formed in a square or semi-circular shape, etc., but is not limited to this, it is possible to change the shape.

Here, the step 134 is for the purpose of uniformly supplied to the purge gas discharge port 136 inside the chamber 100 in the purge gas supply line 138 in the supply of the purge gas. do.

In addition, the step 134 is formed with a purge gas discharge port 136 in the form of a circular groove, the purge gas supply line 138 to which the purge gas discharge port 136 and the purge gas supply unit is formed. At this time, the purge gas delivered through the purge gas supply line 138 is to be uniformly supplied to the purge gas outlet 136 in the chamber 100.

That is, the purge gas is not immediately discharged by the step 134, but is moved along the inside of the purge gas discharge port 136 and is pushed by the purge gas which is delayed for a while and continues to be discharged with uniform intensity in all directions. Will be.

The second sealing member 140 is provided on the bottom surface of the first intervention member 130 to maintain the airtight between the first intervention member 130 and the second intervention member 150, at one end A hole connected to the laser light irradiation hole 132 of the first intervention member 130 is formed.

The second intervention member 150 is a plate shape provided on the bottom surface of the third sealing member 140, the laser light irradiation hole 152 connected to the laser light irradiation hole 132 of the first intervention member 130. ) Is formed at one end.

The third sealing member 160 is provided on the bottom surface of the second intervention member 150 to maintain the airtight between the second intervention member 150 and the lower chamber 170, the first end 2 The hole which is connected to the laser light irradiation hole 132 of the interventional member 150 is formed.

In particular, as shown in FIGS. 3 and 4, the third sealing member 160 is provided with a connection hole 162 connected to the exhaust ports 174 and 176 formed at the bottom of the lower chamber 170. The connection hole 162 communicates with a predetermined flow path (not shown) formed on the third sealing member 160. In this case, the connection hole 162 may be formed to have a diameter smaller than a portion of the ring-type exhaust ports 174 and 176, that is, the entire formation area of the exhaust ports 174 and 176 and the protective gas outlet 178. In this case, since the connection hole 162 is formed in each region of the exhaust ports 174 and 176, when the protective gas is exhausted near the exhaust line, the source gas may not be uniformly distributed and may be concentrated. . Furthermore, when the number and diameter of the holes of the exhaust ports 174 and 176 are reduced, the distribution ratio of the source gas can be increased.

As shown in FIG. 3, the lower chamber 170 is provided in the lowermost layer of the chamber 100 so that one end of the lower chamber 170 has a step to be concentric with the laser light irradiation hole 152 of the second intervening member 150. A hole 172 is formed, and the inflow direction and the discharge direction are different while being connected to the exhaust ports 174 and 176 connected to the exhaust means at the bottom of the insertion hole 172 and the shield gas supply unit. The protective gas outlets 178 are formed to respectively. Here, the protective gas outlet 178 sprays a protective gas to prevent damage to the surface of the substrate when the thin film is deposited on the substrate. On the other hand, since the protective gas outlet 178 is discharged inclined toward the outside direction, the air curtain is formed, the air curtain prevents the leakage of unreacted gas and reaction additives.

At this time, the protective gas outlet 178 is inlet is formed in the vertical direction and the outlet is formed to be inclined in the outward direction, the inclination angle is formed in the acute angle range so that the discharge direction of the purge gas inclined outward in the chamber 100 The fluid flow of the can be made constant.

In addition, when the protective gas is discharged by the protective gas outlet 178, the protective gas is discharged to the protective gas such as Ar (argon) gas to spread the fluid from the protective gas outlet 178 when the protective device is discharged to increase the purity of the safety device and the thin film. At the same time, it makes sure to have a clear direction (outward direction).

As shown in FIG. 5, the nozzle block 180 is formed in a stepped shape corresponding to the insertion hole 172 of the lower chamber 170, and the laser light irradiation holes 112, 132, and 152 formed in an upper layer thereof. The laser light irradiation hole 182 is formed to be concentric with each other, and the source gas outlet 184 for thin film deposition is formed through the laser light irradiation hole 182.

Here, the nozzle block 180 is a metal source in the state provided with a plurality of metal sources (Mo, W, Al, Cu, etc.) and a plurality of angles and diameters of the source gas outlet 184 for thin film deposition according to the process conditions It can be replaced according to the process conditions and the lower chamber 170 than the new manufacturing in terms of speed and cost is reduced.

At this time, the thin film deposition source gas outlet 184 is formed in the acute angle (0 ~ 90 °) range relative to the horizontal plane toward the laser light irradiation hole 182, the diameter is formed in the range of 0.1 ~ 1.5mm It is desirable to be.

Therefore, the thin film deposition apparatus according to the present invention forms an insertion hole 172 to be concentric with the laser light irradiation holes 112, 132, and 152 in the lower chamber 170, and increases the thin film in the insertion hole 172. The wear source gas outlet 184 has a plurality of different angles and diameters, and can be replaced according to a metal source and process conditions, thereby reducing speed and cost compared to newly manufacturing the lower chamber 170. , The constraint of the machining shape is reduced. (See Figures 3 and 5)

The connection hole 162 is formed in the third sealing member 160 having the connection holes 162 connected to the exhaust ports 174 and 176 and the protective gas outlet 178 formed at the bottom of the lower chamber 170. When the protective gas is exhausted in the vicinity of the exhaust line by forming a diameter smaller than the entire area of the ring-type exhaust ports 174 and 176, that is, the entire formation area of the exhaust ports 174 and 176 and the protective gas outlet 178, The gas is not evenly distributed and can be prevented from being concentrated. In addition, when the number and diameter of the holes of the exhaust ports 174 and 176 are reduced, the distribution ratio of the source gas may be increased. (See Figures 3 and 4)

When the protective gas is discharged by the protective gas discharge port 178, the inlet of the protective gas discharge port 178 is formed in the vertical direction and the discharge port is inclined outward so that the discharge direction of the purge gas is inclined outward and the chamber 100. The fluid flow inside can be made constant. This makes it possible to spread the fluid from the protective gas outlet 178 and at the same time have a certain direction. (See Figures 3 and 4)

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention.

100: chamber 114: optical window
110: upper chamber 120, 140, 160: first, second, third sealing member
130, 150: 1st, 2nd intervention member 170: nozzle block
172: insertion hole 174: the inner exhaust port
176: outside exhaust port 178: protective gas outlet
180: nozzle block 182: laser light irradiation hole
184: source gas outlet for thin film deposition

Claims (6)

A thin film deposition apparatus comprising a chamber and a sealing member to supply a source gas and deposit a thin film while irradiating a laser light upon a substrate defect,
The chamber is configured to include an upper chamber and a lower chamber, the upper chamber and the lower chamber is formed so that the laser light irradiation holes are concentric, respectively,
The lower chamber is provided at a lower end so that an insertion hole is formed to be concentric with the laser light irradiation hole, and an exhaust port and a protective gas outlet are formed on the bottom surface of the insertion hole so that the inflow direction and the discharge direction are different from each other.
A nozzle block inserted into an insertion hole of the lower chamber, wherein the laser light irradiation hole is disposed at a central portion thereof, and a source gas outlet for thin film deposition passes through the laser light irradiation hole; And
A third sealing member seated on an upper portion of the lower chamber and partially forming a connection hole connected to the protective gas outlet at the protective gas outlet; Thin film deposition apparatus comprising a.
The method of claim 1,
The nozzle block has one or more thin film deposition source gas outlets, and the thin film deposition apparatus characterized in that it is provided to selectively replace any one of a plurality of different angles and diameters of the thin film deposition source gas outlets.
The method of claim 2,
The thin film deposition apparatus of claim 1, wherein the source gas outlet for thin film deposition is formed within an acute range based on a horizontal plane.
The method of claim 1,
The connection hole is a thin film deposition apparatus, characterized in that the area is formed smaller or larger than the total area formed.
The method of claim 1,
The protective gas outlet is a thin film deposition apparatus, characterized in that formed inclined in the outward direction in the vertical direction.
6. The method of claim 5,
Thin film deposition apparatus, characterized in that the inclination angle of the protective gas outlet is formed within an acute angle range.

Images