KR20200038399A - Gas flow control apparatus and laser chemical vapor deposition apparatus using the same - Google Patents

Abstract

Disclosed are a gas flow control apparatus useful for formation of a high-quality fine wiring pattern and a laser chemical vapor deposition apparatus using the same. The gas flow control apparatus comprises: a first flow control unit connected to a carrier gas tank to control the flow rate of carrier gas for transferring a first metal source to a chamber; a first variable valve for controlling the flow rate of first metal gas flowing from a first canister for storing the first metal source; a second flow control unit connected to the carrier gas tank to control the flow rate of the carrier gas for transferring a second metal source to the chamber; and a second variable valve for controlling the flow rate of second metal gas coming from a second canister for storing the second metal source, wherein mixed source gas of the first metal source and the second metal source, conveyed through the first and second variable valves and mixed at a predetermined mixed ratio by the first and second flow control units and the first and second variable valves, is supplied to the chamber, and the mixed source gas supplied to the inside of the chamber is irradiated with a laser to form an alloy wire or an alloy pattern.

Description

Gas flow control device and laser chemical vapor deposition device using the same {GAS FLOW CONTROL APPARATUS AND LASER CHEMICAL VAPOR DEPOSITION APPARATUS USING THE SAME}

The present invention relates to a device for controlling the gas flow rate supplied to a chamber for laser chemical vapor deposition (LCVD), and more particularly, a gas flow rate adjustment device useful for forming high-quality fine wiring patterns and using the same It relates to a laser chemical vapor deposition apparatus.

In general, laser chemical vapor deposition (LCVD) is performed by chemically depositing a laser beam on a corresponding portion of a substrate and intensively depositing a portion of the substrate to form a wiring pattern or the like by directly patterning. It is the way. To this end, in a conventional LCVD apparatus, a source gas containing a single metal material is configured to be supplied to a portion forming a wiring pattern.

The thickness, width, shape, and film quality of the wiring pattern formed in the LCVD process may vary depending on the vacuum degree, source gas pressure, laser output and laser beam shape, size, irradiation time, and temperature conditions in the wiring formation process. Is well known through research and experiments on existing LCVD.

However, the formation of a large number of wires on a large area substrate by LCVD by direct patterning method has not yet been generalized in terms of time and efficiency of laser use, and is mainly used as a means of repairing defective parts of a wiring pattern.

However, when most of the wiring patterns are formed using photolithography and some defects are supplemented with LCVD, the wiring made of LCVD is rapidly formed due to the characteristics made in a very short time using a laser. There is a high probability of occurrence of uneven partial cracks or crystal defects such as voids, and these problems can cause conductivity problems. In addition, when viewed from a cross section perpendicular to the wiring formation direction, the middle portion has a recessed shape, and the thickness growth amount and the growth rate are limited compared to the wiring width, so it is difficult to reduce the line width to secure conductivity.

As a result, these problems make the process difficult in repairing highly integrated display devices or integrated circuit patterns, require a lot of processing time, cause another short circuit problem with adjacent patterns, or provide sufficient conductivity in wiring. There is a need for an appropriate solution to this, as it can be prevented from being secured, and an improved LCVD equipment for repair that can efficiently and efficiently perform such work is also required.

Republic of Korea Patent Publication No. 10-2017-0001447 (2017.01.04) Republic of Korea Registered Patent Publication No. 10-1243782 (2013.03.08)

The present invention is to solve or alleviate the problem of limitation or inefficiency in the fine wiring repair using the conventional laser chemical vapor deposition (LCVD) apparatus described above, and to control the flow rate of metal gas from a plurality of canisters (canister) By controlling the composition ratio of the metal pattern formed by real-time, a laser chemical vapor deposition apparatus that can reduce or eliminate problems such as cracks and voids when repairing wires by LCVD and reduce wire widths can be effectively adopted in recent fine wiring processes. The purpose is to provide.

Another object of the present invention is to improve the film quality of the fine wiring pattern formed for repair, etc. in the chamber by combining with the chamber equipped with the laser chemical vapor deposition apparatus described above, while reducing the line width, gas flow rate to increase the efficiency of the process It is to provide a regulating device.

Gas flow control device according to an aspect of the present invention for solving the above technical problem is connected to the chamber for laser chemical vapor deposition to control the composition ratio of the metal pattern formed by laser chemical vapor deposition in the chamber A gas flow rate adjusting device for controlling the flow rate of the metal gas supplied to the first flow rate control unit that is connected to a carrier gas tank to control the flow rate of the carrier gas that transports the first metal source to the chamber; A first variable valve that regulates the flow rate of the first metal gas coming from the first canister containing the first metal source; A second flow rate control unit that is connected to the carrier gas tank and controls a flow rate of a carrier gas that transports a second metal source to the chamber; And a second variable valve that controls the flow rate of the second metal gas coming from the second canister containing the second metal source, and is transported through the first variable valve and the second variable valve, and the first and A mixed source gas of the first metal source and the second metal source mixed at a predetermined mixing ratio by the second flow control units and the first and second variable valves is supplied to the chamber, and inside the chamber The mixed source gas to be supplied is characterized by being irradiated with a laser to form an alloy wiring or alloy pattern.

In one embodiment, the gas flow rate control device further comprises a first electronic pump control unit installed between the first variable valve and the chamber and a second electronic pump control unit installed between the second variable valve and the chamber. It can contain.

In one embodiment, each of the first metal source and the second metal source may be supplied by being contained in the first canister and the second canister in the form of a metal powder.

Laser chemical vapor deposition apparatus according to another aspect of the present invention for solving the above technical problem, any one of the above-described embodiments gas flow control device; And it characterized in that it comprises a laser supply for irradiating the laser to the mixed source gas to form an alloy wiring or alloy pattern from the mixed source gas supplied to the chamber by the gas flow control device.

In one embodiment, the laser chemical vapor deposition apparatus may further include an exhaust gas line that discharges residual metal gas in the chamber after the alloy pattern or alloy wiring is formed.

In one embodiment, the laser chemical vapor deposition apparatus may further include an optical processing laser apparatus that densely forms the structure of the alloy pattern or alloy wiring in the chamber after formation of the alloy pattern or alloy wiring.

In one embodiment, the laser chemical vapor deposition apparatus may further include an optical system configured to enter the wire forming laser apparatus and the optical processing laser apparatus included in the laser supply unit in the same optical axis.

The laser chemical vapor deposition apparatus according to another aspect of the present invention for solving the above technical problem is provided with a laser supply unit for supplying laser light by adjusting a stage, an output and a shape in which a substrate is mounted in a chamber, and the laser supply unit An optical system installed to irradiate a laser beam to a substrate, transfer means for relatively moving the irradiation position of the laser light and the position of the substrate, and an alloy wiring or alloy on the substrate provided around the position where the laser light contacts the substrate It is made of a source supply unit for supplying a material to form a pattern, wherein the source supply unit supplies a mixed source gas into the chamber, and the laser supply unit irradiates a laser to the mixed source gas to form an alloy wiring or alloy pattern. By repairing the defective metal pattern on the substrate It shall be.

In one embodiment, the laser chemical vapor deposition apparatus may further include a heater coupled to the stage to heat the substrate.

In one embodiment, the source supply unit is a metal gas or one or more canisters in which the source gas is stored, a carrier gas supply unit, the carrier gas of the carrier gas supply unit is supplied to the canister, respectively, so that each of the source gases is placed on the substrate. It may be provided with a supply pipe to be transported toward the process chamber, a flow regulator and a valve installed at least one in the supply pipe.

In one embodiment, the source gas and the supply piping are provided in plural, and the supply piping is combined into one mixed flow piping before being introduced into the process chamber, and the process chamber is mixed with a plurality of source gases mixed at a certain ratio. Source gas is supplied.

In one embodiment, the laser chemical vapor deposition apparatus may further include a discharge pipe for discharging by-product gas from the material of the alloy wiring or alloy pattern in the source gas in the process chamber.

In order to solve the above technical problem, the repair LCVD apparatus according to another aspect of the present invention is a stage on which a substrate is mounted, a laser supply unit for supplying laser light by adjusting output and shape, and a laser light supplied by the laser supply unit It is provided with an optical system installed to irradiate, a moving means for relatively moving the irradiation position of the laser light and the position of the substrate, and a source supply part provided around the position where the laser light is in contact with the substrate to supply a material to form a wiring pattern to the substrate However, it is characterized in that the pattern formed by LCVD is made to irradiate laser light irradiated in the LCVD process with laser light having different characteristics to perform annealing heat treatment in an in-situ process.

In the apparatus of the present invention, the laser light source for LCVD and the laser light source for annealing heat treatment may be composed of different laser light sources, or may be the same laser light source having a different laser irradiation power and irradiation method.

In addition to the laser light source for LCVD and the laser light source for annealing heat treatment, the apparatus of the present invention is also provided with a laser light source for pattern removal, so that a repair operation for forming a wiring pattern can be made in situ.

At this time, the laser light source for pattern removal may be a laser light source for LCVD and a laser light source for annealing heat treatment may be composed of different laser light sources, or may be the same laser light source having a different laser irradiation power and irradiation method.

In the apparatus of the present invention, the laser light source for LCVD is made to continuously irradiate laser light to the substrate, and the laser light source for annealing heat treatment can be made to intermittently irradiate the laser light shaped in a block shape on the substrate.

In the present invention, when different laser light sources are used when performing an in-situ laser operation, it is preferable to arrange the laser light source so that the laser beam is irradiated on the same optical axis without disturbing the alignment of the optical system.

According to the present invention, it is possible to control the composition ratio of an alloy wiring or an alloy pattern formed by controlling the flow rates of metal gas from a plurality of canisters, thereby enabling fine metal wiring by a laser chemical vapor deposition (LCVD) process. Alternatively, when repairing a fine metal pattern, a problem such as cracks or voids can be reduced or eliminated, and a laser chemical vapor deposition apparatus that can be effectively applied to a more refined wiring repair process in recent years by reducing wiring line width can be provided.

In addition, according to the present invention, it is formed through an LCVD repair process by supplying a mixed source gas (mixed metal gas) in which the mixing ratio of a plurality of methane gases is controlled in real time by being coupled to a chamber equipped with a laser chemical vapor deposition apparatus. It is possible to provide a gas flow control device capable of improving the film quality of the fine wiring pattern and reducing the line width while increasing the efficiency of the process.

In addition, according to the present invention, when the wiring is repaired by LCVD, a laser annealing process is additionally performed to reduce or eliminate problems such as cracks and voids in the wiring, and the wiring line width can be reduced.

In addition, according to the present invention, while improving the film quality formed for the repair and reducing the line width, it is possible to use the laser beam source for LCVD and the laser beam source for annealing in common, so that they can be used in general, and thus the efficiency of device use and process efficiency. Can increase.

1 is a conceptual view showing the configuration of a laser chemical vapor deposition (LCVD) apparatus according to an embodiment of the present invention,
Figure 2 is a schematic configuration diagram showing the configuration of the source gas supply unit of the LCVD apparatus according to an embodiment of the present invention,
Figure 3 is a graph showing the component ratio of the wiring pattern formed by using the LCVD apparatus according to an embodiment of the present invention,
4 is a focused ion beam scanning electron microscope (FIB SEM) photograph showing a wiring pattern shape formed by using an LCVD apparatus according to an embodiment of the present invention;
5 is a photograph showing a cross section of the wiring pattern of FIG. 4,
Figure 6 is a photograph showing the shape of the pattern before the laser annealing heat treatment in the same width section of the pattern as in Figure 5,
7 is a schematic configuration diagram of another embodiment of the LCVD apparatus that may employ the source gas supply of FIG. 2;

First, unless defined otherwise herein, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by a person skilled in the art to which the present invention pertains. . Terms such as those defined in a commonly used dictionary should be interpreted as meanings consistent with the contextual meaning of the related art, and are not to be interpreted as ideal or excessively formal meanings unless explicitly defined herein.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Referring to FIG. 1, the laser chemical vapor deposition apparatus according to the present exemplary embodiment may first be described with reference to a wiring forming laser apparatus, an optical system, and an optical processing laser apparatus included in the laser supply unit 110.

The laser processing laser supply unit 110 is installed at the top inside the chamber.

The laser light emitted from the laser supply unit is cut into a predetermined shape through a slit 120 or a mask and passes through the objective lens system 160 through the laser tube lens 140 and the beam splitters 191 and 151. In the state, it enters the processing region of the substrate 170. Several lens combinations are installed in the objective lens system 160 to select and pass tube lenses 160a, 160b, and 160c of the most suitable lens combination.

In order to allow the laser light to be irradiated to the processing area of the substrate 170, the position where the laser light is irradiated and the position of the substrate are relatively adjusted, and the substrate is moved to the stationary position while the substrate is intermittently moving or to the substrate processing area while the substrate is continuously moving. Laser light may be irradiated. Such relative movement can be achieved by a transfer device that determines the planar position by moving the stage 175 on which the substrate is placed independently on the X and Y axes, but on the contrary, the laser supply unit 110 and the optical system and the source gas supply pipe 130 ) As a single module, it is also possible to perform processing using a laser such as LCVD while moving with respect to the substrate. A heater (not shown) for preheating the substrate may be installed on the substrate stage 175 to facilitate laser processing.

A source gas supply pipe 130 and a discharge pipe 135 are installed around the processing area so that a source gas or precursor gas of a metal or other conductive material that will form a wiring pattern is supplied to the processing area, and a by-product calculated as the wiring pattern is made The gas is quickly discharged to the outside through the discharge pipe 135 so as not to adversely affect the process.

The falling light 153 is prepared, and the light of the falling light proceeds with the optical axis of the laser light source through the beam splitter 151 below the laser tube lens 140, and is placed on the substrate 170 processing area through the objective lens system 160. Will illuminate. The image of the substrate processing area in which the illumination is illuminated passes through the objective lens system 160 in the reverse direction and is separated from the laser optical axis through the upper beam splitter 191 through the image tube lens 194 and the reflection mirror 192. It is input to an imaging device 193 such as a camera.

The camera allows the operator to adjust the degree of laser processing while monitoring the image of the substrate processing area, or it is connected to an automatic adjustment device (not shown) to automatically adjust the laser adjustment device connected to this automatic adjustment device again. do.

The automatic adjustment device can be a computer system that can be combined with the adjustable elements of the embodiments of the present invention to control these elements programmatically or manually. When the automatic adjustment device is connected to the camera, the camera image may be processed by an image processing program to obtain a result, and the necessary elements may be moved automatically or by a predetermined program according to the result.

In addition to the illumination illumination 153, the illumination illumination 155 that illuminates the substrate from the back side of the substrate, and the slit illumination 157, which is configured to illuminate a slit or a mask through which laser light passes, are further installed as necessary. Become and can be used.

The laser supply unit 110 includes a plurality of laser lights 111 and 113 and a beam splitter 115 for guiding these laser lights to a common optical path and a common optical axis. It may be made by further comprising a).

The laser supply unit has a plurality of laser light sources here, but may be used for LCVD, annealing heat treatment, pattern removal or zapping by changing the output or irradiation method while using a single laser light source. The selection of a specific laser light source in the laser supply unit may be made by a method of operating one laser light source and stopping the operation of another laser light source, but a method of shielding a laser light source that is not required while operating all of the plurality of laser light sources may be used. In order to block the laser light of each laser light source for a relatively short period of time, shutters (not shown) may be installed.

The laser light of the first laser light source 111 is transmitted through the beam splitter 115, and the laser light of the second laser light source 113 is reflected through the same optical axis, the same path as the light reflected from the beam splitter 115. The substrate 170 is reached. Therefore, if only the laser light source is selected, the LCVD process and the annealing process can be conveniently performed in an in-situ manner while the substrate is continuously seated on the stage 175 without changing the position or setting of other components.

On the other hand, in order to proceed with LCVD, it is necessary to supply the source gas of the material forming the wiring pattern to be formed on the substrate to the processing region where the laser light hits the substrate. It is also conceivable to supply a powder of a material other than the source gas to the processing region and perform laser sintering by irradiating laser light, but in this embodiment, a metal wiring pattern in an alloy form is formed by supplying a precursor material in a gas state. For example, hexacarbonyl tungsten represented by W (CO) ₆ may be used as a source gas having a tungsten element, and hexacarbonyl molybdenum having a similar structure may be used as a source gas having a molybdenum element.

FIG. 2 is a conceptual view illustrating a configuration of a source gas supply unit supplying a mixed source gas to an LCVD apparatus according to an embodiment of the present invention.

The source gas supply unit includes a piping configuration such as a source gas supply pipe and a by-product gas discharge pipe.

As the source gas, hexacarbonyl tungsten and hexachloronyl molybdenum are used to be stored in canisters 1 and 2 (221 and 231), respectively, and argon, an inert gas stored in the carrier gas tank 210, is used as the carrier gas. It is assumed to be.

The carrier gas is branched into four lines through a valve, and passes through each of the MFCs 211, 213, 215, and 217, whereby the amount is controlled. The first line flows through the canister 1 (221) to transport the tungsten source gas to the process chamber (C), and the second line flows through the canister 2 (231) to transport the molybdenum source gas to the process chamber.

In the first line and the second line, carrier gas may flow through the bypass valves 225 and 235 without passing through the canister, and when passing through the canister, the source gas through the control valves 223 and 233 at the rear end of the canister. The amount of the source gas may be adjusted by adjusting the supply amount.

The first line and the second line flow through lines integrated with each other through valves 227 and 237 at the rear of each line, and are introduced into the chamber through the chamber input valve 131 in a mixed state.

The third line and the fourth line are interrupted through the control valves 241 and 243 without going through the canister, and are inputted into the chamber as necessary for each step of the process, one acting as a laser window shield gas and one acting as an air curtain gas.

The by-product gas that is not used in the process in the chamber and is made of the remaining components of the precursor while the remaining source gas or the material forming the wiring pattern is deposited on the substrate is disposed along the exhaust pipe 135 whose opening and closing is controlled by the exhaust valve 137. Is discharged. EPC (electronic power control, 139) to help the discharge may be installed in the discharge pipe 135, the mixed source gas of the first and second line of the combined pipe is input to the process chamber as needed. It may be directly connected to the discharge pipe 135 through the bypass line with the pass valve 133.

Hereinafter, a description will be given of an example of a method of repairing circuit board wiring such as a liquid crystal display (LCD) or an organic light emitting diode (OLED) substrate wiring through an LCVD apparatus according to an embodiment of the present invention. The device of the present invention will be described further.

According to this embodiment, first, a wiring pattern is primarily formed on a substrate, and a defect point such as a short circuit or disconnection of the primary wiring is found and recorded through an inspection device. A substrate with known defect location is fed into the repair device of the present invention and mounted on a stage. Subsequently, a first step of forming a fine wiring on a portion of the substrate where a disconnection occurs by laser chemical vapor deposition (LCVD) method, and a second step of repairing defects through zapping and a first using a laser The third step of annealing (heat treatment) the wiring formed in the step is performed in-situ.

Specifically, in the first step, a microwiring pattern having a line width within 2.5 micrometers (µm) is formed on the substrate by LCVD.

The wiring is formed to include tungsten (W) and molybdenum (Mo) as main materials, for example, 85% by weight or more. The wiring material may include a plurality of materials selected from silver (Ag), copper, gold (Au), platinum (Pt), aluminum (Al), or a combination thereof. The microwiring pattern formed of the alloy wiring material may include carbon atoms (C) or oxygen atoms (O) in the deposition process (see FIG. 3).

As the alloy wiring, a source gas prepared to configure a tungsten: molybdenum weight ratio of 50:50 was used. The weight ratio (% by weight) of tungsten and molybdenum in the alloy wiring may be selected from 20:80 to 80:20. While irradiating the laser light to the corresponding position of the substrate, a source gas was supplied around the corresponding position.

The source gas containing tungsten and the source gas containing molybdenum are stored in separate canisters 1 and 2, and the amount of carrier gas is controlled through a separate flow regulator (MFC) while carrier gas is provided through a separate line. When is supplied to canisters 1 and 2, the carrier gas proceeds along the line with the source gas, and is supplied to the process chamber in a mixed state through a valve in an integrated supply pipe at the end of the supply line.

When the LCVD process is performed, when a laser light source for LCVD is selected in the laser supply unit to continuously emit laser light, the laser light irradiates a processing region of the substrate through a slit and an optical system. The source gas is supplied to the processing region, and the source gas is a by-product gas having carbon and oxygen while depositing tungsten and molybdenum elements on the substrate by the thermal and photochemical action of a laser, and is discharged through a discharge pipe.

In the laser supply unit, the laser light can be beam-shaped according to the line width to be formed on the substrate, and passes through the installed slit or mask to become a laser light having a constant shape, size, and light intensity distribution, thereby reducing the processing area of the substrate. To investigate.

When the transfer stage on which the substrate is mounted moves in the same plane, the substrate region to which the laser light is irradiated is constantly changing and a wiring pattern is formed over a certain period of movement.

In the second step, the supply of the source gas and the discharge of by-product gas are stopped, and zapping is performed as a kind of laser repair processing to remove the problem portion and improve the conductivity of the fine wiring pattern. The zapping may be performed to correct the black defects of the alloy wiring, and may perform an improved zapping operation by hot air, microwave, heater heating, or a combination thereof, but in an environment such as this embodiment, it is easy to proceed in situ. Laser treatment.

Here, a laser light source for annealing heat treatment different from the laser light source used in the first step LCVD is used for zapping, but the laser power, emission cycle, and shape and size of the laser light may be used in a state different from the annealing heat treatment.

In the third step, a laser heat treatment is performed on the wiring pattern formed in the first step to reduce line width and improve additional conductive performance.

For example, the laser is a continuous wave (CW) laser, and it is determined to perform annealing by irradiating a fine pattern of a substrate reference line width of 2 micrometers and a length of 50 micrometers by repeating two scans at a rate of 3 micrometers per second. A fine wiring pattern with laser heat treatment can be obtained.

Of course, other types of laser heat treatment are also possible. For example, the laser used in the third step is formed with a line width of 1 micrometer larger than the line width of the fine wiring in the beam forming process, and the laser light irradiation proceeds with the pulse method by shaping the laser beam in a block form rather than continuous irradiation. It is also possible. However, the output is properly adjusted so that the temperature from the fine pattern surface to a certain depth maintains an appropriate temperature range.

The laser heat treatment may be performed by heating to a depth of 1 μm on the surface of the wiring in a temperature range of 500 ° C. to 650 ° C. and cooling. Cooling is slow to room temperature, but rapid cooling with a cooling medium is also possible. The third step also proceeds in situ in the same place without changing the process space.

Through this third step, the tissue density of the fine wiring and the wiring film can improve performance and stability. Here, the performance of the wiring film may include a reduction in dispersion of resistance, reduction in average resistance, reduction in deposition line width, improvement in internal film uniformity, and overall performance of crack removal.

Through the experiment, the width of the wiring film that passed through the third step was reduced from 2.5 micrometers to 2.0 micrometers in the first step, and the resistance was that the measured value for a specific pattern in the first step was 200 ohms (Ω) in the second step. It can be confirmed that cracks and voids disappeared when viewed through 107 ohms and decreased to 94 ohms after the third step, and the cross-sectional shape was observed with a focused ion beam scanning electron microscope (FIB SEM).

In addition, when the center of the pattern line width was recessed to form a U-shape, it was also confirmed that the pattern maintains a flat shape over the line width.

4 is a focused ion beam scanning electron microscope showing the composition ratio, the step coverage and the size of the wiring film quality and the surrounding film quality by laser heat treatment and the component ratio of an alloy wiring or a wiring including a plurality of metals in one embodiment according to the method for forming a fine wiring as seen from above. (FIB SEM) It is a photograph, FIG. 5 is a photograph showing the cross section of the alloy wiring in FIG. 4, and FIG. 6 is a photograph showing the pattern shape in the same section as in FIG. 5 before the laser heat treatment.

7 is a schematic configuration diagram of another embodiment of the LCVD apparatus that may employ the source gas supply of FIG. 2;

Referring to FIG. 7, the laser light originating from the laser light source 10 is a slit 20, a first beam splitter 91, a tube lens 40, a second beam splitter 81, and a third beam splitter 51 ), Through the objective lens 60 to reach the processing area of the substrate 70 to be processed.

The mixed source gas for wiring formation is supplied to the processing region of the substrate through the source pipe 30 in one direction. The mixed source gas can be supplied by the source gas supply in FIG. 2.

In addition, a discharge pipe 35 is formed in the processing area of the substrate to form a wiring pattern on the other side and discharge the remaining by-product gas. In the processing area, metal (conductive material) is calculated from the source gas or the precursor gas of the metal forming a wiring pattern by the photochemical or thermal action of the laser light and deposited in the processing area. It is discharged through 35.

At this time, the slit is a concept that broadly includes an optical mask for beam shaping, and serves to determine the size and shape of the laser light that passes through the slit and reaches the substrate processing region. The tube lens 40 and the objective lens 60 work together to allow the laser light to reach the processing region of the substrate 70 with a desired focusing speed so that the substrate processing can be performed.

In the image light source 53, the light is directed toward the third beam splitter 51 so that the reflected light illuminates the processing area of the substrate through the objective lens 60. The light reflected and scattered in the processing region is the image light and passes through the objective lens 60 in reverse with the image information of the processing region, and the third beam splitter 51, the second beam splitter 81, and the tube lens 40 After passing through) in reverse, it is reflected from the first beam splitter 91 and input to the imaging device 93 so that the imaging device can acquire an image of the processing area.

Therefore, in this configuration, the tube lens 40 together with the objective lens 60 constitutes a path through which the laser beam for processing the substrate reaches the substrate, and a path through which image information of the substrate processing area is transmitted to the imaging device, and the focusing speed of the laser light It plays a role of determining and correcting the imaging and aberration of the image light from the objective lens of the infinite optical system.

In addition, a part of the image light is reflected from the second beam splitter 81 and is input to the auto focus sensor 83 on its side, and the auto focus sensor 83 is a substrate 70 as a processing object through the imaging device 93. The objective lens 60 for each magnification of the objective lens 60 for confirming the pattern processed on the upper surface of the substrate 70 by laser light in order to smoothly check the processing process and results of the pattern processed in the corresponding region of the ) Will be focused automatically.

On the other hand, in the above-described embodiment, the gas flow control device and the laser vapor deposition apparatus using the same are not specifically mentioned with respect to a control device that is coupled to or mounted on the device through a wired or wireless network. It is natural that at least one or more may be additionally provided in the gas flow rate control device and the laser gas phase chemical vapor deposition device using the same. In that case, the control device may include a logic circuit, a microcomputer, a program logic controller, or a computing device. Here, the computing device performs a program in combination with a memory for storing a program for controlling or controlling a series of operations and process atmospheres by components of a gas flow rate control device or a laser vapor deposition apparatus using the same. It may be implemented with a processor. The program may be implemented in the form of a plurality of software modules and stored in memory.

In one example, the software module controls the composition ratio of alloy wiring or alloy pattern metal materials formed through a laser chemical vapor deposition process in the chamber in a gas flow rate control device connected to a chamber for laser chemical vapor deposition. As a device for controlling the flow rate of each of a plurality of metal gases supplied to the gas or a mixing ratio thereof, the first software module controls the operation of the first flow rate control unit and is connected to a carrier gas tank to provide a first metal source. Adjusting the flow rate of the carrier gas to the chamber; The second software module controls the operation of the first variable valve, for example, the opening degree, to adjust the flow rate of the first metal gas coming out of the first canister; The third software module controls the operation of the second flow rate control unit to control the flow rate of the carrier gas connected to the carrier gas tank and transporting a second metal source to the chamber; The fourth software module may be implemented to control the operation of the second variable valve to adjust the flow rate of the second metal gas coming from the second canister.

In addition, the fifth software module included in the software module may be implemented to control the laser supply unit to irradiate a mixed source gas supplied into the chamber with a laser to form an alloy wiring or alloy pattern.

In the above, the preferred embodiments of the present invention have been mainly described and limited, but those skilled in the art may variously modify and change the present invention without departing from the spirit and scope of the present invention as set forth in the claims below. You will understand that you can.

110: laser supply unit 111, 113: laser light source
115, 151, 191: beam splitter 120: slit (concept with photomask)
130: supply pipe 135: discharge pipe
140: laser tube lens 153: falling light
155: transmissive illumination 157: slit illumination
160: objective lens system 193: imaging device (camera)
194: image tube lens 221, 231: canister

Claims (12)

A gas flow control device connected to a chamber for laser chemical vapor deposition to control a flow rate of metal gas supplied to the chamber to control a composition ratio of a metal pattern formed by laser chemical vapor deposition in the chamber,
A first flow rate control unit connected to a carrier gas tank to control the flow rate of the carrier gas that transports the first metal source to the chamber;
A first variable valve that regulates the flow rate of the first metal gas coming from the first canister containing the first metal source;
A second flow rate control unit that is connected to the carrier gas tank and controls a flow rate of a carrier gas that transports a second metal source to the chamber; And
It has a second variable valve for adjusting the flow rate of the second metal gas coming from the second canister containing the second metal source,
The first metal source and the first metal source mixed through the first variable valve and the second variable valve and mixed at a predetermined mixing ratio by the first and second flow control units and the first and second variable valves. A gas flow control device characterized in that the mixed source gas of the second metal source is supplied to the chamber, and the mixed source gas supplied into the chamber is irradiated with a laser to form an alloy wiring or alloy pattern. The method according to claim 1,
And a first electronic pump control unit installed between the first variable valve and the chamber, and a second electronic pump control unit installed between the second variable valve and the chamber. The method according to claim 1,
Each of the first metal source and the second metal source is a gas flow control device, characterized in that supplied in the form of metal powder contained in the first canister and the second canister, respectively. Gas flow control device according to any one of claims 1 to 3; And
And a laser supply unit for irradiating a laser to the mixed source gas to form an alloy wiring or an alloy pattern from the mixed source gas supplied to the chamber by the gas flow rate adjustment device. The method according to claim 4,
And an exhaust gas line for discharging residual metal gas in the chamber after the alloy pattern or alloy wiring is formed. The method according to claim 4,
And an optical processing laser device for densely forming the structure of the alloy pattern or alloy wiring in the chamber after formation of the alloy pattern or alloy wiring. The method according to claim 6,
A laser chemical vapor deposition apparatus further comprising an optical system configured to enter the wire forming laser apparatus and the optical processing laser apparatus included in the laser supply unit in the same optical axis. Stage in which the substrate is mounted in the chamber,
A laser supply unit that supplies laser light by controlling output and shape.
An optical system installed to irradiate the laser light supplied by the laser supply unit to a substrate,
Transfer means for relatively moving the irradiation position of the laser light and the position of the substrate,
The laser light is provided around the position in contact with the substrate is provided with a source supply for supplying a material for forming an alloy wiring or alloy pattern to the substrate,
The source supply unit supplies a mixed source gas into the chamber,
The laser supply unit is a laser chemical vapor deposition apparatus characterized in that by irradiating the laser to the mixed source gas to form an alloy wiring or an alloy pattern to repair a metal pattern defect on the substrate. The method according to claim 8,
A laser chemical vapor deposition apparatus comprising a heater capable of heating a substrate on the stage. The method according to claim 8,
The source supply unit can supply one or more source gas, a carrier gas supply unit, a supply pipe for supplying carrier gas to each of the carrier gas supply units to the canister, thereby transporting each of the source gases toward a process chamber on which the substrate is placed, A laser chemical vapor deposition apparatus comprising at least one flow regulator and valve installed in the supply pipe. The method according to claim 10,
The source gas and the supply pipe are provided in plural,
The supply pipe is a laser chemical vapor deposition apparatus characterized in that it is made to be combined into one mixed flow pipe before being introduced into the process chamber, so that the plurality of source gases are supplied to the process chamber in the form of a mixed source gas mixed at a predetermined ratio. The method according to claim 10,
A laser chemical vapor deposition apparatus further comprising a discharge pipe for discharging a by-product gas from the material of the alloy wiring or alloy pattern in the source gas in the process chamber from the process chamber.

Images