KR20170112526A - Deposition Apparatus and Method - Google Patents

Abstract

The present invention relates to a method of manufacturing a semiconductor device, comprising: a supporting portion capable of placing a processing material on an upper surface; a source supply portion located above the processing material to supply a source with the processing material; And a heating part which locally raises an ambient temperature of an area irradiated with the processing laser and is installed so as to be movable relative to the supporting part, It is possible to suppress or prevent the generation of foreign matter when depositing.

Description

[0001] Deposition Apparatus and Method [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a deposition apparatus and a deposition method, and more particularly, to a deposition apparatus and a deposition method capable of suppressing or preventing the generation of foreign matter when depositing a film on a processed material by a chemical vapor deposition system.

Various display devices have electronic circuits formed on a substrate, and the conductive lines of these electronic circuits may cause defects such as disconnection or short-circuit during manufacturing or after manufacture of the circuit. For example, during the process of manufacturing various display devices including an LCD (Liquid Crystal Display), an OLED (Organic Light Emitting Display), or an LED (Light Emitting Display), electrodes or wirings Signal lines and the like may be partially disconnected to cause an open defect.

Therefore, during the process of manufacturing various display devices, a repair process for repairing an open defect is performed. The conventional repair process is performed by a chemical vapor deposition type repair apparatus. In order to repair the open defect, after the repair position of the substrate was raised to a predetermined temperature, a metal source atmosphere was formed at the repair position, and a laser was irradiated to the defect position to deposit the film.

However, foreign matter may be generated on the substrate while the gaseous source is cooled. For example, when the source is over-supplied or the source of the high temperature is quenched in contact with the substrate or the wiring, a large amount of foreign matter is generated around the region irradiated with the laser. Such foreign matter may degrade the quality and performance of the display device.

KR 2013-0088628 A

The present invention provides a deposition apparatus and a deposition method capable of raising the ambient temperature of a region irradiated with a processing laser.

The present invention provides a deposition apparatus and a deposition method capable of suppressing or preventing the generation of foreign matter when depositing a film on a treated material.

According to the present invention, A source supply positioned above the treated material to supply a source with the treated material; A laser portion that irradiates a processing laser so that the source is deposited on the processed material and is installed so as to be movable relative to the supporting portion; And a heating unit that locally raises an ambient temperature of an area irradiated with the processing laser and is installed so as to be movable relative to the supporting unit; .

The heating section includes a laser unit that irradiates a heating laser to a region wider than the region irradiated with the processing laser.

Further comprising an optical section having an objective lens positioned between the laser section and the support section,

The laser unit includes a laser generator for generating a continuous wave laser, and a first mirror for guiding a continuous wave laser generated in the laser generator to the objective lens.

The laser section includes a laser oscillator for generating a machining laser, a second mirror for guiding the machining laser generated in the laser oscillator to the objective lens, and a second mirror for adjusting the irradiation area of the machining laser, And a slit disposed therein.

The laser part and the heating part are movably installed.

The source comprises a cobalt source.

The present invention relates to a process for preparing a processed product; Spraying a source onto the processed material; And locally raising the ambient temperature of a region to which the processing laser is irradiated by irradiating the processing laser with a processing laser; .

The process of raising the ambient temperature of the region irradiated with the machining laser includes a process of irradiating the heating laser to a region wider than the region irradiated with the machining laser.

The heating laser includes a continuous wave laser.

Wherein the step of irradiating the processing laser and the heating laser comprises: irradiating the processing laser and the heating laser together; And irradiating a heating laser for a predetermined time after the irradiation of the processing laser is finished.

The step of irradiating the heating laser for the predetermined time includes a step of irradiating the heating laser while moving the heating laser along a path along which the processing laser moves.

The process of raising the ambient temperature of the region to which the processing laser is irradiated includes a process of heating the region to a temperature of 35 degrees Celsius or more.

According to the embodiments of the present invention, the ambient temperature of the region irradiated with the processing laser can be raised. Therefore, it is possible to suppress or prevent the source in the vicinity of the region irradiated with the processing laser from contacting and cooling the substrate or the wiring. Thus, it is possible to suppress or prevent the generation of foreign matter on the substrate or the wiring while the source is cooled.

In addition, since no foreign matter is generated on the substrate or the wiring, deterioration of the quality and performance of the display device can be prevented. Therefore, the defective incidence rate can be reduced and the productivity can be improved.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a view showing the structure of a deposition apparatus according to an embodiment of the present invention; FIG.
2 is a view showing a structure of a heating unit, a laser unit, and an optical unit according to an embodiment of the present invention.
3 is a flow chart illustrating a deposition method according to an embodiment of the present invention.
4 illustrates a deposition process according to an embodiment of the present invention.
Figure 5 compares foreign matter around a film deposited in a conventional manner with a film deposited according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. It will be apparent to those skilled in the art that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, It is provided to let you know. To illustrate the invention in detail, the drawings may be exaggerated and the same reference numbers refer to the same elements in the figures.

FIG. 1 is a view showing a structure of a deposition apparatus according to an embodiment of the present invention, and FIG. 2 is a view showing the structure of a heating unit, a laser unit, and an optical unit according to an embodiment of the present invention.

Referring to FIGS. 1 and 2, a deposition apparatus 100 according to an embodiment of the present invention includes a support on which a workpiece S can be placed on a top surface, a support S on which a workpiece S , A laser part 150 which irradiates a processing laser so that the source is deposited on the processing object S and is installed so as to be movable relative to the supporting part, And a heating unit 160 installed so as to be able to move relative to the support unit. Further, the deposition apparatus 100 may further include a chamber 120 and an optical section 140. At this time, the deposition apparatus 100 may be a laser chemical vapor deposition (LCVD) repair apparatus for depositing a film on the processed object S.

The processed material S may be a substrate on which various electronic devices are formed on one surface, or may be a substrate on which processes for manufacturing the electronic devices are in progress or the process is completed. For example, the processed product S may be a glass substrate on which a gate line, a data line, a pixel, and a thin film transistor are formed on one side.

The supporting portion may include a table formed in a hexahedron shape and placed on the floor or the like, and a stage 110 provided on the upper surface of the table. The stage 110 is formed in a rectangular plate, and the processed product S is mounted and supported.

The stage 110 can support the processing object S on its upper surface. For example, the stage 110 may be an integral plate type glass or a split type bar type glass. The stage 110 may be provided with an aligning unit (not shown) for aligning the processing object S in at least one of the x-axis direction and the y-axis direction. A lift pin (not shown) and a vacuum chuck (not shown), which can support the processing object S in the z-axis direction, may be provided on the stage 110.

Further, the stage 110 may be installed on the upper surface of the table and fixed in position. Alternatively, the stage 110 may be installed on the table so as to be movable in at least one of x-axis direction, y-axis direction, and z-axis direction.

A mounting portion (not shown) may be installed on the upper surface of the table so as to be movable in at least one of x-axis direction, y-axis direction, and z-axis direction. Or a mounting portion may be provided on the upper surface of the table to fix the position. For example, when the stage 110 is mounted on the upper surface of the table and fixed in position, the mounting portion can be movably installed on the upper surface of the table. Conversely, when the stage 110 is movably installed on the upper surface of the table, the mounting portion may be provided on the upper surface of the table and the position thereof may be fixed. However, the present invention is not limited thereto, and the stage 110 and the mounting portion can be installed in various ways that are movable relative to each other.

The mounting portion (not shown) can movably support the source supplying portion 130, the laser portion 150, and the heating portion 160. The mounting portion may be spaced apart from the upper side of the stage 110. The mounting part can move the source supplying part 130, the laser part 150, and the heating part 160 by applying the structure and the method of the linear motor. However, the manner in which the mounting portion moves the source supply portion 130, the laser portion 150, and the heating portion 160 is not limited to this and may vary.

The chamber 120 serves to collect the source material closely to the portion of the processing object S to be deposited. The chamber 120 is disposed between the laser part 150 and the stage 110 and the chamber 120 and the stage 110 may be spaced apart from each other in the vertical direction. The chamber 120 may be installed movably in the x-axis direction, the y-axis direction, and the z-axis direction.

Further, a processing hole extending in the z-axis direction (or the vertical direction) may be formed in the center portion of the chamber 120. A window may be mounted on the top of the processing hole. The window serves to isolate the inside of the processing hole from the outside air above the chamber 120. The window may be formed of a material through which the laser passes, for example, a quartz material. Therefore, the laser beam irradiated from the laser part 150 can be irradiated onto the upper surface of the processed product S through the window.

The source supply part 130 serves to supply a source which is a deposition material to be deposited on the processing object S. The source supply 130 is connected to the chamber 120 and can transport the source into the process hole of the chamber 120. The source supply 130 may include a source storage vessel (not shown) in which a source is stored, and a source supply line 131 that forms a path through which the source moves.

The source storage vessel may be provided with a heater (not shown) for heating the source. For example, a hot wire may be installed around the source storage vessel. The source may be stored in the form of a powder in a source storage vessel and then heated and vaporized. The vaporized source may be conveyed to the source supply line 131 by a carrier gas.

The source supply line 131 may have one end connected to the source storage container and the other end passing through the chamber 120 and positioned on one side of the inner circumferential surface of the process hole. A plurality of source supply lines 131 and source storage containers may be provided. Thus, each of the source supply lines 131 may supply the same source, or may supply different sources.

 At this time, a cobalt source excellent in film performance as a source can be used. The cobalt source is suitable for micromachining and has excellent conductivity. However, the source is not limited thereto, and various materials such as tungsten may be used.

The optical unit 140 is disposed between the laser unit 150 and the chamber 120 to control the focus and the optical path of the laser beam emitted from the laser unit 150. The optical unit may include an objective lens 141 and a monitoring unit 142 for monitoring the state of the processed object, and a lighting unit (not shown) for irradiating light.

The objective lens 141 is positioned between the laser part 150 and the stage 110. The objective lens 141 can compress the laser to have a high energy density. Thus, the laser beam passing through the objective lens 141 can be compressed and focused on the processing object S. [

The monitoring unit 142 photographs a desired area of the processing object S. [ Accordingly, it is possible to monitor in real time the defects and the repair status of the processed object S by discriminating whether or not the film is formed in an area photographed by the monitoring unit or judging whether or not a foreign object is generated. The monitoring unit 142 may include a camera 142a and a photographing mirror 142b.

The camera 142a may be a CCD camera (Charge-Coupled Device Camera), and can take a picture of the processing process S being processed. When the light is generated in the illumination unit, the illumination light is guided to the processed object S, and the reflected illumination light is guided to the camera 142a to photograph the processed object S.

The photographing mirror 142b is located between the camera 142a and the objective lens 141. [ Further, the photographing mirror 142b is located between the tube lens 155 and the objective lens 141. [ One surface of the photographing mirror 142b transmits the processing laser beam that has passed through the tube lens 155 and guides the processed laser beam to the objective lens 141 side while the other surface reflects the illumination light so that the camera 142a photographs the processed object S . That is, the photographing mirror 142b can guide the illumination light that has passed through the objective lens 141 to the camera 142a after being reflected on the processed object S.

The lighting unit serves to generate light. The light generated in the illumination unit can be irradiated onto the upper surface of the processing object S through the objective lens 141 and reflected and moved to the monitoring unit. Therefore, the monitoring unit can photograph the surface of the processed object S through the light generated in the illumination unit.

The laser part 150 is disposed on the upper side of the chamber 120 or the objective lens 141 and serves to generate a processing laser to be irradiated on the processing object S. The laser unit 150 irradiates the processing laser to the defective position of the exposed processing object S through the window of the chamber 120 to cut the wiring or supplies thermal energy to the portion where the wiring is to be formed in the source atmosphere, So that a metal source is deposited as a film at the defect location. For example, the processing laser may be a Depo laser forming a film. The laser part 150 can be mutually coupled with the source supply part 130 and moved together on the treatment object S. [

The laser unit 150 includes a laser oscillator 151 for generating a machining laser beam, a second mirror 153 for guiding the machining laser generated in the laser oscillator 151 to the objective lens 141, And a slit 154 which adjusts the slit 154. The laser unit 150 may further include a first expander 152 and a tube lens 155.

The laser oscillator 151 serves to generate a machining laser. The processing laser may be a high frequency laser including a QCW (Quasi Continuous Wave). QCW lasers have vibrations unlike continuous wave lasers. Therefore, the machining laser can process the surface of the work S, unlike the continuous wave laser. Thus, when a processing laser is irradiated in a source atmosphere, a film can be formed at a portion irradiated with the processing laser. That is, the processing laser is a laser that forms a film on the processed object S.

The first expander 152 may be positioned between the laser oscillator 151 and the second mirror 153. The first expander 152 serves to adjust the beam size of the laser beam emitted from the laser oscillator 151.

The second mirror 153 may be positioned between the objective lens 141 and the laser oscillator 151. [ The second mirror 153 serves to change the moving direction of the laser beam emitted from the laser oscillator 151. Thus, the machining laser emitted from the laser oscillator 151 can be reflected by the second mirror 153 and guided to the objective lens 141 side.

The tube lens 155 may be positioned between the objective lens 141 and the slit 154. [ The tube lens 155 serves to prevent the machining laser generated in the laser oscillator 151 from spreading. Thus, when the processing laser passes through the tube lens 155, it can be irradiated with a single line without spreading. Therefore, the machining laser can be irradiated to the correct position, and a precise work can be performed.

The slit 154 may be positioned between the second mirror 153 and the objective lens 141. The slit 154 serves to adjust the area irradiated with the processing object S by the processing laser. Thus, the area irradiated with the processing laser can be adjusted according to the size of the wiring or the defect.

On the other hand, if the source is over-supplied or a high-temperature source is brought into contact with the processing object S or the wiring on the processing object S, the material can be suddenly cooled, and a large amount of foreign material may be generated around the region to which the processing laser is irradiated. Especially when cobalt is used as a source, the amount of foreign matter is increased as compared with the case where tungsten is used as a source. Therefore, the heating unit 160 can be provided to suppress or prevent the generation of foreign matter.

The heating unit 160 serves to prevent the foreign matter from being generated by raising the temperature around the laser irradiation area. The heating unit 160 may include a laser unit 161 that irradiates a heating laser to a region wider than the region irradiated with the processing laser. For example, when the area of the region to which the processing laser is irradiated is 5 x 5 um, the area of the region irradiated with the heating laser may be 160 x 80 um. Thus, the processing laser can be irradiated in the region irradiated with the heating laser.

The laser unit 161 serves to rapidly heat the periphery of the region irradiated with the heating laser. The laser unit 161 includes a laser generator 161a for generating a continuous wave laser and a first mirror 161e for guiding the continuous wave laser generated in the laser generator 161a to the objective lens 141. [ The laser unit 161 may further include a second expander 161b, a first auxiliary mirror 161c, and a second auxiliary mirror 161d.

The laser generator 161a serves to generate a continuous wave laser. A continuous wave laser is a laser which continues oscillating with a time constant output. The continuous wave laser can raise the temperature only without processing the surface of the treatment object S unlike the QCW laser or the pulse laser. Thus, the continuous wave laser irradiated around the region irradiated with the machining laser may not affect the formation of the film on the processed product S, and only the ambient temperature may be raised to prevent foreign matter from being generated. Therefore, a continuous wave laser can be used as the heating laser. Further, the continuous wave laser may be a 532 laser. 532 A laser is a laser with a wavelength of 532 nm and a short wavelength laser.

 The second expander 161b may be positioned between the laser generator 161a and the first auxiliary mirror 161c. The second expander 161b controls the beam size of the continuous wave laser generated in the laser generator 161a.

The first auxiliary mirror 161c may be positioned between the laser generator 161a and the second auxiliary mirror 161d. The first auxiliary mirror 161c serves to change the moving direction of the continuous wave laser generated in the laser generator 161a. Thus, the continuous wave laser generated in the laser generator 161a may be reflected by the first auxiliary mirror 161c and guided to the second auxiliary mirror 161d side.

The second auxiliary mirror 161d may be positioned between the second auxiliary mirror 161d and the first mirror 161e. The second auxiliary mirror 161d serves to change the traveling direction of the continuous wave laser reflected by the first auxiliary mirror 161c. Thus, the continuous wave laser reflected from the first auxiliary mirror 161c can be reflected by the second auxiliary mirror 161d and guided to the first mirror 161e side.

The first mirror 161e may be positioned between the objective lens 141 and the laser generator 161a. Further, the first mirror 161e may be positioned between the objective lens 141 and the tube lens 155. [ That is, one surface of the first mirror 161e transmits the processing laser beam passing through the tube lens 155 to guide it to the objective lens 141 side, and the other surface reflects the heating laser beam irradiated from the laser generator 161a, The user can be guided to the guide 141 side.

At this time, one or a plurality of auxiliary mirrors may be provided between the first mirror 161e and the laser generator 161a, or an auxiliary mirror may not be provided. The first mirror 161e serves to change the traveling direction of the continuous wave laser generated by the laser generator 161a or the continuous wave laser reflected by the second auxiliary mirror 161d. Thus, the continuous wave laser can be reflected by the first mirror 161e and guided to the objective lens 141 side.

The continuous wave laser and the machining laser are irradiated to the processing object S through the objective lens 141. Therefore, the vertical axis central axis of the continuous wave laser and the working laser can be located on the same line. That is, the region irradiated with the machining laser may be located at the center portion of the region irradiated with the continuous wave laser. Thus, the region irradiated with the continuous wave laser can be wrapped around the region irradiated with the processing laser. Since the region irradiated with the continuous wave laser is locally surrounded only around the region irradiated with the processing laser, it is possible to prevent the generation of foreign matter around the region irradiated with the processing laser.

However, the region irradiated with the machining laser may be located at the outer portion of the region irradiated with the continuous wave laser, or the region irradiated with the continuous wave laser and the region irradiated with the machining laser may be partially overlapped. That is, the position of the region where the machining laser and the continuous wave laser overlap each other and the degree of overlap may vary.

At this time, the laser unit 161 is not provided with a slit for adjusting the area irradiated with the continuous wave laser generated in the laser generator 161a. As the area irradiated with the continuous wave laser increases, the area where no foreign matter is generated also increases. Therefore, since the slit is not provided, the area irradiated with the continuous wave laser can be prevented from being reduced. Thus, it is possible to effectively prevent foreign matters from being generated on the processed product S while being irradiated with an area that allows the continuous wave laser to be irradiated to the maximum.

In addition, the heating unit 160 can move together with the laser unit 150. More specifically, the source supply unit 130, the laser unit 150, the heating unit 160, the optical unit 140, and the chamber 120 may be installed in the mounting unit and moved together. Therefore, when the machining laser moves, the heating laser also moves, so that the machining laser can always be irradiated to the central portion of the region irradiated with the heating laser. Therefore, when a source is supplied to a place where a film is to be formed, a film is formed on the processed product S while the processed laser is irradiated, and a heating laser is irradiated around the region irradiated with the processed laser to prevent the generation of foreign matter .

On the other hand, the heating section may include a heating lamp (not shown) which raises the temperature of the area wider than the area irradiated with the processing laser. For example, a high power lamp can be used as a heating lamp. The high-power lamp is equipped with an LED to irradiate light around a region irradiated with the processing laser. The irradiated light may raise the temperature around the region irradiated with the processing laser. However, the type of the heating lamp is not limited to this and may be various.

Alternatively, the heating section may be provided with a heating lamp and a laser unit for irradiating a heating laser. Thus, the temperature around the region irradiated with the laser beam can be doubly heated to raise the temperature easily.

As described above, the ambient temperature of the region to which the processing laser is irradiated can be raised, and the source in the vicinity of the region irradiated with the processing laser can be inhibited or prevented from being brought into contact with the processing object S to be cooled. Thus, it is possible to suppress or prevent the generation of foreign matter on the processed product S while the source is cooled.

In addition, since no foreign matters are generated on the processed object S, it is possible to prevent deterioration of the quality or performance of the finally produced display device. Therefore, the defective incidence rate can be reduced and the productivity can be improved.

FIG. 3 is a flow chart illustrating a deposition method according to an embodiment of the present invention, FIG. 4 is a view illustrating a deposition process according to an embodiment of the present invention, FIG. 5 is a cross- To compare the foreign matter around the deposited film by the method of FIG.

3 and 4, a deposition method according to an embodiment of the present invention includes a process (S100) of preparing a process material, a process (S200) of spraying a source material onto the process material, And locally raising the ambient temperature of the region irradiated with the machining laser (S300). At this time, the deposition method is a repair method for depositing a film on the processed object (S), in which a film is deposited on a portion where a defect (for example, an open defect) occurs using a laser chemical vapor deposition (LCVD) have.

Further, the process of injecting the source, and the process of irradiating the processing laser and raising the ambient temperature may be carried out simultaneously or together, or sequentially in any order.

First, the treated material S can be provided. The processed material S may be a substrate and may be placed on the upper surface of the stage. Thus, the processing object S can be positioned on the lower side of the chamber, and the source can be sprayed with the processed object S or the laser can be irradiated.

Then, the vaporized source is sprayed onto the top of the treated material S or above the defect position. The source includes a metal source. For example, the source may be a cobalt source. The source may be prepared in a source storage vessel in powder form, vaporized, and transported and injected with a carrier gas. Cobalt sources are less expensive than tungsten sources and have a lower temperature for vaporization.

Then, the processing laser A is irradiated with a defect position (for example, an open defect) on the processing object S. The area irradiated with the processing laser A is controlled by the slit according to the area of the defect, and the processing laser A can be irradiated while moving according to the length of the defect. Thus, the film can be deposited at the defective position, and defects of the processed product S can be repaired. A high-frequency laser including QCW can be used as the processing laser (A). That is, since the QCW laser has vibration unlike the continuous wave laser, the film can be formed on the processed product S.

At this time, the heating laser B is also irradiated around the region irradiated with the machining laser (A). The heating laser (B) serves to raise the temperature around the region irradiated with the processing laser (A). The machining laser A may be irradiated simultaneously with the heating laser B.

Alternatively, the processing laser (A) may be irradiated after the heating laser (B) is first irradiated. Thus, it is possible to effectively prevent foreign matter from being generated around the heating laser (B) when the heating laser (B) is irradiated by raising the ambient temperature of the region where the film is deposited in advance.

Alternatively, the heating laser A may be irradiated after the machining laser B is irradiated first. Thus, even if foreign matter is generated when the film is formed with the processing laser (B), foreign matter generated by the heating laser (A) irradiated subsequently can be removed. That is, the time point at which the heating laser A and the processing laser B are irradiated can be variously selected.

A continuous wave laser can be used as the heating laser (B). The continuous wave laser can raise the temperature of the processed product S without processing the surface of the processed product S. Thus, the heating laser B can prevent foreign matter from being generated without affecting the step of forming the film with the processing laser (A).

At a temperature less than 35 degrees Celsius, the cobalt source may be cooled, foreign matter may be generated on the processed product S, and when the temperature exceeds 60 Celsius degrees, the film is overgrown during deposition of the source, . Thus, the heating laser B can heat the ambient temperature of the region irradiated with the processing laser A to a temperature between 35 and 60 degrees centigrade.

The heating laser B is irradiated to a region wider than the region to which the processing laser A is irradiated and the processing laser A is irradiated while being superimposed in the region irradiated with the heating laser B. [ For example, the processing laser A may be irradiated to the central portion of the region irradiated with the heating laser (B). More specifically, the center axis of the heating laser B and the processing laser A in the up and down direction can be located on the same line. Thus, the region irradiated with the heating laser (B) can wrap around the region irradiated with the processing laser (A). Since the region irradiated with the heating laser B is locally surrounded only around the region irradiated with the processing laser A, the generation of foreign matter around the region irradiated with the processing laser A can be blocked.

However, the region irradiated with the machining laser A may be located at the outer portion of the region irradiated with the heating laser B, and the region irradiated with the heating laser B and the region irradiated with the processing laser A may partially It may be overlapped. That is, the position of the region where the machining laser A and the heating laser B are overlapped and the degree of overlap may vary.

The area irradiated with the heating laser B may be 50 times or more larger than the area irradiated with the processing laser. For example, if the area of the region to which the processing laser A is irradiated is set to 5 x 5 um, the area of the region irradiated with the heating laser B can be set to 160 x 80 um. That is, the foreign matter is randomly generated around the region where the processing laser A is irradiated. Therefore, in order to prevent foreign matter from being generated, the heating laser B must be irradiated in a wide area. Therefore, the area of the region to which the heating laser B is irradiated may be 50 times or more the area irradiated with the processing laser in consideration of the area of the region where the foreign matter is generated.

When the film is deposited on the defective portion, irradiation of the processing laser (A) is stopped. At this time, the heating laser (B) can also be stopped being irradiated at the same time.

Alternatively, the heating laser B may be irradiated for a predetermined time after the irradiation of the processing laser A is completed. That is, there may be a region where a foreign object is generated after the film is deposited. Therefore, the heating laser (B) can be irradiated to the region where the film of the processed product S is deposited to remove the foreign substance.

At this time, the heating laser (B) is irradiated while moving along the path where the processing laser (A) travels. That is, since the cobalt source is injected around the region irradiated with the processing laser (A), foreign matter is generated only around the region irradiated with the processing laser (A). Therefore, since the irradiation of the heating laser B is performed along the path along which the processed laser A moves, the heating laser B can be irradiated only to the region where the foreign object can be generated. Thus, it is possible to simultaneously remove the foreign matter while generating the film on the treated product S, and remove the foreign substance even after the film is formed on the treated product S, thereby removing the foreign substance.

On the other hand, it is also possible to raise the ambient temperature in the region where the processing laser is irradiated by using a heating lamp instead of the heating laser. For example, a high power lamp can be used as a heating lamp. The high-power lamp is equipped with an LED to irradiate light around a region irradiated with the processing laser. The irradiated light may raise the temperature around the region irradiated with the processing laser. Alternatively, the heating laser and the light generated in the heating lamp may be simultaneously irradiated to double-heat the region irradiated with the processing laser.

As described above, the ambient temperature of the region to which the processing laser A is irradiated can be raised, and the source in the vicinity of the region irradiated with the processing laser A can be inhibited or prevented from coming into contact with the processing object S and being cooled.

When only the processing laser is irradiated without being irradiated with the heating laser, a large amount of foreign matter F is generated as shown in Fig. 5 (a) due to the characteristics of the cobalt source. However, as shown in FIG. 5 (b), when the heating laser is irradiated to the periphery of the region irradiated with the processing laser, generation of foreign matter F can be suppressed or prevented. That is, it is possible to prevent the cobalt source from being cooled, and to suppress or prevent the generation of foreign matter on the processed product S.

In addition, since no foreign matters are generated on the processed object S, it is possible to prevent deterioration of the quality or performance of the finally produced display device. Therefore, the defective incidence rate can be reduced and the productivity can be improved.

Although the present invention has been described in detail with reference to the specific embodiments thereof, it will be apparent to those skilled in the art that various modifications and variations can be made without departing from the scope of the present invention. Therefore, the scope of the present invention should not be limited by the described embodiments, but should be defined by the appended claims, as well as the appended claims.

100: Deposition apparatus 110: Stage
120: chamber 130: source supply part
140: optical part 141: objective lens
150: laser section 160: heating section

Claims (13)

A support on which a treatment material can be placed on the upper surface;
A source supply positioned above the treated material to supply a source with the treated material;
A laser portion that irradiates a processing laser so that the source is deposited on the processed material and is installed so as to be movable relative to the supporting portion; And
A heating unit that locally raises the ambient temperature of the region irradiated with the processing laser and is provided so as to be movable relative to the supporting unit; / RTI > The method according to claim 1,
Wherein the heating unit includes a laser unit that irradiates a heating laser to a region wider than a region irradiated with the processing laser. The method of claim 2,
Further comprising an optical section having an objective lens positioned between the laser section and the support section,
Wherein the laser unit comprises a laser generator for generating a continuous wave laser and a first mirror for guiding a continuous wave laser generated in the laser generator to the objective lens. The method of claim 3,
The laser unit includes a laser oscillator for generating a laser, a second mirror for guiding the laser generated in the laser oscillator to the objective lens, and a slit disposed between the second mirror and the objective lens for adjusting an irradiation area of the laser, Lt; / RTI > The method according to claim 1,
Wherein the heating unit includes a heating lamp for raising a temperature of a region wider than a region irradiated with the processing laser. The method according to any one of claims 1 to 5,
Wherein the laser unit and the heating unit are installed movably together. The method according to any one of claims 1 to 5,
Wherein the source comprises a cobalt source. A process of preparing a processed product;
Spraying a source onto the processed material; And
Irradiating the processing object with a processing laser and locally raising the ambient temperature of the region irradiated with the processing laser; ≪ / RTI > The method of claim 8,
Wherein the process of raising the ambient temperature of the region irradiated with the machining laser comprises irradiating a heating laser to a region wider than the region irradiated with the machining laser. The method of claim 9,
Wherein the heating laser comprises a continuous wave laser. The method of claim 9,
Wherein the step of irradiating the processing laser and the heating laser comprises:
Irradiating the processing laser and the heating laser together; And
And irradiating a heating laser for a predetermined time after the irradiation of the processing laser is completed. The method of claim 11,
The step of irradiating the heating laser for the predetermined time includes:
And irradiating the heating laser while moving the processing laser along a path along which the processing laser moves. The method according to any one of claims 8 to 11,
The process of raising the ambient temperature of the region irradiated with the machining laser,
And heating the region to a temperature of at least 35 degrees Celsius.

Images