TWI742357B - Deposition apparatus and method - Google Patents

Abstract

The present invention discloses a deposition device and a deposition method suitable for the device. The deposition device and the deposition method suitable for the device can prevent the occurrence of growth-type foreign matter during a thin film deposition process. The deposition device includes a cavity unit configured to arrange a treatment object On the upper side of the support unit, a processing hole is formed on the side opposite to the support unit, and a window is provided at the upper end of the processing hole; the laser unit can irradiate the processed object with laser through the processing hole; the source material supply unit is connected to the processing The lower part of the hole; a purge gas supply unit connected to the upper part of the processing hole; a curtain gas supply unit formed to spray curtain gas to the outside of the processing space formed on the lower side of the processing hole; and a heater unit installed in the purge One side of at least one of the gas supply unit and the curtain gas supply unit.

Description

Deposition device and method

The present invention discloses a deposition apparatus and method. In more detail, the present invention discloses a deposition apparatus and method capable of preventing the occurrence of growth-type foreign matter during the thin film deposition process.

Various display devices are provided with electronic circuits formed on a substrate. A part of the conductive wires of electronic circuits may be broken or short-circuited during the manufacturing process of the circuit or after the manufacturing is completed. For example, in the process of manufacturing various display devices including liquid crystal displays, organic light-emitting displays, or light-emitting displays, some of the electrodes, wiring, or signal lines of each element formed on the substrate are disconnected, resulting in open faults. ).

Therefore, in the process of manufacturing various display devices, a repair process for repairing disconnection defects is performed. The chemical vapor deposition repair device is used to perform the repair process in the atmosphere. After heating the glass to raise the temperature of the defect position of the substrate, the metal source in the gas state is supplied to the defect position to form a metal source atmosphere, and the laser deposition film is irradiated to the defect position.

The repair process of the aforementioned method can be performed in the atmosphere and a metal film with a desired shape can be immediately formed at the broken wire. That is, the repair process of the aforementioned method is not only simple in the repair process, but also can be repaired by including all the electrodes, wiring and signal lines of the components on the substrate.

Fig. 1 is a graph showing an example of a temperature-pressure graph of a metal source used in a repair process. The lower part of the curve shown in the graph is the "gas" area, and the upper part is the "solid" area. When the temperature-pressure state of the metal source is in the "gas" zone, the metal source maintains a gas state. When the temperature-pressure state of the metal source moves from the "gas" zone to the "solid" zone, the metal source sublimates into a solid state.

Please refer to Figure 1. When the repair device is used for the repair process, if the substrate is supplied with a metal source before the substrate is fully heated, the partial pressure of the substrate compared to the temperature of the metal source becomes higher, and the state of the metal source becomes Move from the "gas" area to the "solid" area.

At this time, the metal source is sublimated from a gas state to a solid state, and growth-type crystals are generated on the substrate. In particular, if the supply amount of the metal source is increased in order to increase the thickness of the film, the partial pressure of the metal source also increases, and growth-type foreign matter is likely to occur.

In order to avoid the occurrence of growth-type foreign matter, it is necessary to quickly increase the substrate temperature. The conventional technology uses heated glass to heat the substrate. However, this method has the following problems. For example, high installation costs are required, and the substrate may not be heated due to the state of the ITO (Indium Tin Oxide) film of the heating glass, or the outer corners of the substrate may appear at a higher temperature. Low dead zone.

The prior art of the present invention is disclosed in the following patent documents.

"Literature Technical Literature"

Patent Document 1: KR 10-2016-0116184 A

Patent Document 2: KR 10-2005-0017164 A

The present invention discloses a deposition device and method that can rapidly increase the temperature of a gas supplied to a substrate when a heater unit of in-line type is used for film deposition.

The present invention discloses a deposition device and method that can improve the heating efficiency of gas supplied to a substrate when a coaxial heater unit is used for film deposition.

The present invention discloses a deposition device and method that can prevent the contamination of gas supplied to a substrate when a coaxial heater unit is used for film deposition.

The invention discloses a deposition device and method capable of preventing pyrolysis of source materials during film deposition.

The present invention discloses a deposition device and method which can prevent the occurrence of growth-type foreign matter during film deposition.

The deposition apparatus according to the embodiment of the present invention includes: a chamber unit disposed on the upper side of a support unit on which a processed object can be placed, a processing hole is formed on the side opposite to the support unit, and a processing hole is provided on the upper end of the processing hole A window; a laser unit installed to be able to irradiate the processed object with a laser through the processing hole; a source material supply unit connected to the lower part of the processing hole; a purge gas supply unit connected to the The upper part of the processing hole; a curtain air supply unit installed in the chamber unit, formed to be able to spray curtain air to the outside of the processing space formed on the lower side of the processing hole; and a heater unit installed in the blowing One side of at least one of the scavenging gas supply unit and the curtain gas supply unit.

The purge gas supply unit includes: a purge gas supply device containing purge gas inside and isolated from the cavity unit; a purge gas supply pipe connecting the purge gas supply device and the processing hole; And a flow controller installed in the purge gas supply pipe; wherein the heater unit is installed in the purge gas supply pipe between the flow controller and the cavity unit.

The heater unit can be installed in the purge gas supply pipe in a coaxial manner, so that the purge gas passes through the inside of the heater unit.

The heater unit includes: an outer cylinder, which is coaxially installed on the purge gas supply pipe; an inner cylinder, which is arranged on the inner side of the outer cylinder and communicates with the purge gas supply pipe in a coaxial manner; A heating wire is arranged inside the inner cylinder; and a power supply wire penetrates the outer cylinder and the inner cylinder and is connected to the heating wire.

The deposition apparatus may further include a heater control unit that detects the heat transferred from the heater unit to the flow controller and controls the operation of the heater unit.

The heater control unit includes: a temperature sensor installed in the purge gas supply pipe between the heater unit and the flow controller; and a temperature controller that receives the temperature sensor When the input temperature value is higher than the reference temperature, the heating temperature of the heater unit is lowered or the heater unit is suspended.

The curtain air supply unit includes: a curtain air supply device containing curtain air; and a curtain air supply pipe for enclosing a curtain air injection port formed on the side of the chamber unit around the lower end of the processing hole It is connected to the curtain air supplier, wherein the heater unit is coaxially installed on the curtain air supply pipe so that the curtain air passes through the inside of the heater unit.

The curtain air supply unit includes a flow controller installed on the curtain air supply pipe, and the heater unit is installed on the curtain air supply pipe between the flow controller and the cavity unit.

The deposition apparatus may further include a heater control unit that detects the heat transferred from the heater unit to the flow controller and controls the operation of the heater unit.

The deposition apparatus may further include a gas discharge unit installed in the cavity unit and having an inlet portion located at the outer peripheral edge of the lower end of the processing hole on the one surface of the cavity unit.

The deposition method of the embodiment of the present invention is used to deposit a film on a treatment object supported in the atmosphere, and includes the following processes: preparing the treatment object in the atmosphere; The processing hole on the upper side of the processing space is formed to supply purge gas; a curtain gas is sprayed around the outside of the processing space; at least one of the purge gas and the curtain gas is used to adjust the temperature of the processed object; The processing hole is a supply source material for the processing space; and a laser is irradiated on one side of the processed object through the processing hole to form a film.

The process of adjusting the temperature of the processed object may include the following process: that is, the temperature of the purge gas is adjusted by passing the purge gas through a heater unit, and the heater unit is installed in a coaxial manner. A purge gas supply pipe through which the purge gas passes.

The process of adjusting the temperature of the processed object may include the following process: that is, based on the flow of the purge gas, the flow of the purge gas from the upstream of the heater unit to the purge gas supply pipe The heat transferred by a flow controller is detected, and the operation of the heater unit is controlled according to the detection result.

The process of adjusting the temperature of the processed object may include the following process: that is, the temperature of the curtain air is adjusted by passing the curtain air through a heater unit, and the heater unit is installed in a coaxial manner on the A curtain air supply pipe through which the curtain air passes.

The source material may include a tungsten source or a cobalt source, and the purge gas may include an inert gas.

According to the embodiment of the present invention, the heater unit is installed in the gas supply pipe connected between the flow controller and the chamber unit in a coaxial manner, so that the temperature of the gas supplied to the substrate can be quickly increased by the chamber unit during film deposition, and the temperature rise is increased. Efficiency and prevent pollution. Here, the gas may be a purge gas or a curtain gas, or a purge gas and a curtain gas.

In particular, the heater unit installed in a coaxial manner in the purge gas supply pipe can heat up the purge gas, which accounts for more than 60% of the total gas flow actually supplied to the defect position of the substrate, and therefore can reduce the defects of the substrate. The position quickly heats up to the required temperature, and it can also heat up steadily. Here, all the aforementioned gases include source material, purge gas, and carrier gas.

Moreover, the use of purge gas and air curtain gas to raise the temperature of the substrate without unnecessarily increasing the temperature of the source material can also prevent the pyrolysis of the source material.

Therefore, the thin film deposition process can be performed smoothly, the quality of the deposited film can be improved, and the occurrence of growth-type foreign matter can be prevented from the source.

10‧‧‧Processing space

100‧‧‧Support unit

200‧‧‧cavity unit

210‧‧‧cavity body

211‧‧‧lower surface

212‧‧‧Upper surface

220‧‧‧Processing hole

230‧‧‧Window

240‧‧‧Clamping piece

251‧‧‧Purge gas injection port

252‧‧‧Source material injection port

253‧‧‧First exhaust port

254‧‧‧Curtain air injection port

255‧‧‧Second exhaust port

300‧‧‧Laser unit

400‧‧‧Optical Unit

500‧‧‧Source material supply unit

510‧‧‧Source material supplier

520‧‧‧Source material supply pipe

530‧‧‧Source material flow controller

540‧‧‧Carrier Gas Controller

550‧‧‧Carrier Gas Supply Pipe

600‧‧‧Purge gas supply unit

610‧‧‧Purge gas supply

620‧‧‧Purge gas supply pipe

630‧‧‧Purge gas flow controller

700‧‧‧Curtain Air Supply Unit

710‧‧‧Curtain Air Supply

720‧‧‧Curtain Air Supply Pipe

730‧‧‧Curtain Air Flow Controller

800‧‧‧Emission unit

810‧‧‧Exhaust Ejector

820‧‧‧Exhaust pipe

830‧‧‧Exhaust Flow Controller

900‧‧‧Heater unit

910‧‧‧Outer cylinder

920‧‧‧Inner cylinder

930‧‧‧heating wire

940‧‧‧Power supply line

950‧‧‧Internal (flow path)

1000‧‧‧Heater control unit

1100‧‧‧Temperature sensor

1200‧‧‧controller

A1‧‧‧First exhaust surface

A2‧‧‧Air Curtain Air Jet Surface

A3‧‧‧Second exhaust surface

c‧‧‧Curtain Air

f‧‧‧Purge gas

g‧‧‧Source material

S‧‧‧Substrate

Fig. 1 is a graph showing an example of a temperature-pressure diagram of a metal source; Fig. 2 is a block diagram of a deposition apparatus according to an embodiment of the present invention; Fig. 3 is a schematic diagram of a cavity unit of an embodiment of the present invention; Fig. 4 is an embodiment of the present invention A bottom view of the cavity unit; FIG. 5 is a cross-sectional view of the cavity unit according to an embodiment of the present invention; FIG. 6 is a schematic diagram of a heater unit according to an embodiment of the present invention; The result of the thin film deposition process is compared with the conventional technology as shown in the picture.

The embodiments of the present invention will be described in detail below with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below. The present invention can be implemented in various forms that are different from each other. These embodiments are only helpful for the complete disclosure of the present invention. The knowledgeable person fully explains the scope of the present invention. In order to illustrate the embodiments of the present invention, the drawings may be exaggerated, and those with the same symbols in the drawings represent the same constituent elements.

Fig. 2 is a block diagram of a deposition apparatus according to an embodiment of the present invention; Fig. 3 is a schematic diagram of a cavity unit according to an embodiment of the present invention; Fig. 4 is a bottom view of the cavity unit according to an embodiment of the present invention; Sectional view of the unit; Figure 6 is a schematic diagram of the heater unit of an embodiment of the present invention.

The deposition apparatus according to the embodiment of the present invention will be described in detail below with reference to FIGS. 2 to 6.

The deposition apparatus of the embodiment of the present invention includes: a chamber unit 200, which is arranged on the upper side of the support unit 100, a processing hole 220 is formed on one side, and a window 230 is provided at the upper end of the processing hole 220; the laser unit 300 is installed to pass the processing The hole 220 irradiates the processed object with laser; the source material supply unit 500 is connected to the lower part of the processing hole 220; the purge gas supply unit 600 is connected to the upper portion of the processing hole 220; the curtain gas supply unit 700 is formed to be installed in the cavity unit 200 and The curtain gas c can be sprayed to the outside of the processing space 10 formed on the lower side of the processing hole 220; the heater unit 900 is installed on one side of at least one of the purge gas supply unit 600 and the curtain gas supply unit 700.

The deposition apparatus of the embodiment of the present invention may further include: a supporting unit 100 for supporting the processed object; an optical unit 400 installed between the laser unit 300 and the cavity unit 200; a discharge unit 800 installed on the cavity unit 200; at least one The heater control unit 1000 is configured to detect the heat transferred to the flow controller of at least one of the purge gas supply unit 600 and the curtain air supply unit 700, and control the operation of the heater unit 900 according to the detection result.

The deposition device of the embodiment of the present invention can be used as a repair device that deposits a film on the processed object (for example, the substrate S) in the atmosphere by a chemical vapor deposition method.

The object to be processed is a substrate S that is undergoing various electronic component manufacturing processes or has completed the manufacturing process. For example, it may include a glass substrate with gate lines, data lines, pixels, and thin film transistors formed on one surface. The substrate S may be placed in the support unit 100 or placed in the atmosphere.

The source material may include a metal source. The metal source may include a cobalt (Co) source. Alternatively, the metal source may include a tungsten (W) source. At this time, the conductivity of the cobalt source is better than that of the tungsten (W) source and the molecule is smaller. Therefore, when a cobalt source is used, a film can be deposited on the substrate S better than when a tungsten source is used. The source material can be supplied to the processing hole 220 in a vaporized state, that is, in a gas state.

The cobalt source vaporizes around 35°C, and the tungsten source vaporizes around 75°C. Therefore, the vaporization temperature range of the cobalt source is a preset temperature range including 35°C, and the vaporization temperature range of the cobalt source is a preset temperature range including 75°C.

The source material may be supplied to the processing hole 220 after being controlled at a preset temperature within the deposition temperature range or the vaporization temperature range. The deposition temperature range may be the temperature range of the source material g when the film is well deposited on the substrate S, and at least a part may overlap with the vaporization temperature range.

The deposition temperature range can be derived theoretically based on various physical properties of the source material g or experimentally obtained by repeatedly depositing a thin film.

The support unit 100 may place the substrate S on the upper surface. The support unit 100 may include countertop glass. The support unit 100 is provided with a sorting mechanism (not shown in the figure) for adjusting the position of the substrate S in the x-axis direction and the y-axis direction, and can be provided with a jacking rod (not shown in the figure) that supports the substrate S in the Z-axis direction Show) and vacuum chuck (not shown in the figure). On the other hand, the support unit 100 may be installed on the upper surface of a workbench (not shown in the figure).

The loading unit (not shown in the figure) can be installed on the upper surface of the workbench. The loading unit and the supporting unit 100 are relatively movably installed. The cavity unit 200 may be installed in the loading unit.

The cavity unit 200 may be arranged on the upper side of the support unit 100 or may be arranged in the atmosphere. The cavity unit 200 can be moved in the x-axis, y-axis, and Z-axis directions using the loading unit. The processing hole 220 may be formed through a surface (for example, the lower surface) of the cavity unit 200 opposite to the support unit 100. A window 230 may be provided at the upper end of the processing hole 220 and the lower end of the processing hole 220 may be opened toward the substrate S. The cavity unit 200 may use the processing hole 220 to provide a processing space 10 for the lower side of the processing hole 220.

The processing space 10 may be a space formed on the lower side of the processing hole 220 between the cavity unit 200 and the substrate S and having a predetermined size and shape. Alternatively, the processing space 10 may be a space including the aforementioned space and its periphery.

The cavity unit 200 may include a cavity body 210, a processing hole 220, a window 230, a holder 240, a purge gas injection port 251, a source material injection port 252, a first exhaust port 253, a curtain gas injection port 254, and a second Exhaust port 255.

The cavity body 210 may be made by stacking a plurality of plates along the Z-axis direction. The cavity body 210 may include a lower surface 211, an upper surface 212, and a side surface connecting the edges of the lower surface 211 and the upper surface 212 along the Z-axis direction. The lower surface 211 may be opposite to the substrate S, and the upper surface 212 may be opposite to the optical unit 400. The present invention does not particularly limit the size and shape of the cavity body 210. The cavity body 210 may have a predetermined size, and its shape may be an oval plate on one side and a square plate on the other side. A processing hole 220 is formed on one side of the cavity body 210, and the other side may be installed in the loading unit. Also, the source material supply unit 500, the purge gas supply unit 600, the curtain gas supply unit 700, and the discharge unit 800 may be installed on the other side of the cavity body 210.

The lower end of the processing hole 220 is located at a preset position of the lower surface 211, a ring-shaped first exhaust surface A1 is formed around the outer side of the lower end of the processing hole 220, and a ring-shaped curtain air injection surface A2 is formed around the outer side of the first exhaust surface A1. The outer side of the curtain air injection surface A2 may form a ring-shaped second exhaust surface A3. The first exhaust surface A1, the curtain air injection surface A2, and the second exhaust surface A3 may all be formed on the lower surface 211 and form a concentric shape with the lower end of the processing hole 220 as the center. The upper end of the processing hole 220 can be located at a preset position on the upper surface 212 and the window 230 and the clamping member 240 can be installed on the upper end of the processing hole 220.

The first exhaust port 253 may be formed through the first exhaust surface A1 in the Z-axis direction, and the curtain gas injection port 254 may be formed through the curtain gas injection surface A2 in the Z-axis direction. Furthermore, the second exhaust port 255 may be formed through the second exhaust surface A3 in the Z-axis direction. The first exhaust port 253, the second exhaust port 255, and the curtain air injection port 254 may be arranged at a plurality of positions separated in the circumferential direction around the lower end of the processing hole 220. The first exhaust port 253 and the second exhaust port 255 may be connected to the discharge unit 800, and the curtain air injection port 254 may be connected to the curtain air supply unit 700.

The first exhaust port 253 and the second exhaust port 255 can suck the purge gas f, the source material g, the carrier gas, the curtain gas c, and various foreign substances that have escaped from the processing space 10 formed on the lower side of the processing hole 220. The curtain air injection port 254 injects the curtain air c in a ring around the processing space 10 to isolate the processing space 10 from the atmosphere.

A first exhaust chamber (not shown in the figure) may also be formed between the first exhaust port 253 and the exhaust pipe 820 of the exhaust unit 800. Moreover, a second exhaust chamber (not shown in the figure) may be formed between the second exhaust port 255 and the exhaust pipe 820. The first exhaust chamber and the second exhaust chamber are each formed in a ring shape inside the cavity body 210 and surround the outside of the processing hole 220. The exhaust pipe 820 communicates with the first exhaust chamber and the second exhaust chamber, the first exhaust chamber communicates with the first exhaust port 253, and the second exhaust chamber communicates with the second exhaust port 255.

A curtain air supply chamber (not shown in the figure) may also be formed between the curtain air injection port 254 and the curtain air supply pipe 720 of the curtain air supply unit 700. The air curtain air supply chamber is formed in a ring shape inside the cavity body 210 and may surround the outside of the first exhaust chamber. The curtain air supply chamber may receive the curtain air c from the curtain air supply pipe 720 and distribute it to the curtain air injection ports 254.

The processing hole 220 may penetrate the lower surface 211 and extend to the inside of the cavity body 210. The lower end of the processing hole 220 communicates with the processing space 10, and the source material may be supplied to the processing space 10 through the lower end of the processing hole 220. The processing hole 220 can be formed so that the inner diameter becomes narrower in the direction from the upper end to the lower end. For example, the processing hole 220 may be in the shape of a rotating body. The processing hole 220 may penetrate the inner peripheral surface of the lower part to form the source material injection port 252, and may penetrate the inner peripheral surface of the upper part to form the purge gas injection port 251.

The processing hole 220 extends in the Z-axis direction. The upper part of the processing hole 220 is a part extending from the upper end of the processing hole 220 where the window 230 is installed to a predetermined height between the upper and lower ends of the processing hole 220. The lower part of the processing hole 220 is A portion extending from the aforementioned preset height of the processing hole 220 to the lower end of the processing hole 220.

The source material ejection port 252 is connected to the source material supply unit 500 and can eject the source material g to the processing hole 220. The purge gas injection port 251 is connected to the purge gas supply unit 600 and may inject the purge gas f toward the processing hole 220. The source material injection ports 252 may be formed at a plurality of positions separated along the circumferential direction of the processing hole 220. The purge gas injection ports 251 may be formed at a plurality of positions separated along the circumferential direction of the processing hole 220.

A source material supply chamber (not shown in the figure) may also be provided between the source material injection port 252 and the source material supply pipe 520 of the source material supply unit 500. The source material supply chamber may be formed inside the cavity body 210 to surround the outside of the processing hole 220. The source material supply chamber is connected to the source material supply pipe 520 to receive the source material g and is connected to the source material injection port 252, and the source material g can be distributed to the source material injection port 252.

A purge gas supply chamber (not shown in the figure) may also be provided between the purge gas injection port 251 and the purge gas supply pipe 620 of the purge gas supply unit 600. As an example, the purge gas supply chamber can be formed in the inside of the chamber body 210 in a ring shape with the processing hole 220 as the center. The purge gas supply chamber may receive the purge gas f from the purge gas supply pipe 620 and then distribute the purge gas f to the purge gas injection ports 251.

The window 230 can seal the upper end of the processing hole 220. The inside of the processing hole 220 can be isolated from the upper side of the cavity unit 200 by the window 230. The window 230 may include a quartz material to allow the laser light to pass through. A clamp 240 can be installed on the periphery of the window 230. The clamping member 240 may be provided with a sealing member (not shown in the figure). The sealing member can seal between the window 230 and the upper surface 212. The purge gas f can prevent the lower surface of the window 230 from being damaged by the source material g.

The laser unit 300 may be installed to irradiate laser light to the substrate S through the processing hole 220. The laser light may irradiate the substrate S after passing through the processing hole 220 and the processing space 10.

The laser unit 300 is isolated from the upper side of the optical unit 400 and performs a function of generating laser light. The laser unit 300 irradiates the defect location of the substrate S with laser light to cut off the wiring or supplies energy to the portion where the wiring is to be formed in a cobalt source atmosphere, so that a film can be locally deposited on the defect location of the substrate S.

The laser unit 300 may include such components as the following: that is, a laser oscillator (not shown in the figure) to generate laser light; a mirror (not shown in the figure) to guide the laser light to the optics The objective lens of the unit 400; a slit (not shown in the figure), which can adjust the shape of the laser light between the mirror and the optical unit 400; a beam expander (not shown in the figure), which is used between the laser oscillator and the mirror The size of the laser light is adjusted between; the tube lens (not shown in the figure) is used to prevent the laser light from spreading between the optical unit 400 and the slit.

The optical unit 400 can adjust the optical path and focus of the laser light between the cavity unit 200 and the laser unit 300. The optical unit 400 may include an objective lens (not shown in the figure). The objective lens compresses the laser light into a high energy density and focuses the laser light on the substrate S. The optical unit 400 may include a camera (not shown in the figure), a mirror for shooting (not shown in the figure), and an illumination unit (not shown in the figure) to monitor the film deposition state of the substrate S. Moreover, the optical unit 400 may further include a mirror (not shown in the figure) that controls the direction of the laser light, and at least two curved lenses (not shown in the figure) that increase the incident angle of the laser light relative to the objective lens.

The source material supply unit 500 is connected to the lower portion of the processing hole 220 and can supply the source material to the lower portion of the processing hole 220. The source material supply unit 500 may include a source material supplier 510, a source material supply tube 520, a source material flow controller 530, a carrier gas supplier 540, and a carrier gas supply tube 550.

The source material supplier 510 can be isolated from the cavity unit 200. The source material supplier 510 may include a canister in which the source material is stored in a powder form. The source material supplier 510 may be provided with a heating tool (not shown in the figure) for vaporizing the source material. The heating tool may include various heating wires that generate heat after receiving power. The heating tool can heat the inside of the source material supplier 510 to vaporize the source material. The source material supply pipe 520 may connect the source material supplier 510 and the cavity unit 200. On the other hand, a part of the source material supply pipe 520 penetrates the other side of the cavity unit 200 and extends to the inside of the cavity unit 200, and may be connected to the source material injection port 252.

The source material flow controller 530 may be installed in the source material supply pipe 520. The source material flow controller 530 should be isolated from the cavity unit 200 by a preset distance according to the following optimized layout, which is an optimized layout of process equipment derived to minimize interference with the thin film deposition process performed on the substrate S. Therefore, the source material flow controller 530 can be farther from the cavity unit 200 and closer to the source material supplier 510. The source material flow controller 530 may be provided with a mass flow meter MFC operating in a flow range of approximately hundreds to thousands of sccm. The source material flow controller 530 can control the flow of the source material.

The carrier gas supplier 540 is provided with a pressure vessel storing carrier gas therein, and the carrier gas supply pipe 550 can be connected to the carrier gas supplier 540 and the source material supplier 510. The carrier gas is supplied to the source material supplier 510 through the carrier gas supply pipe 550, and thus the source material and carrier gas can be supplied to the source material supply pipe 520. After that, the source material can be sprayed to the lower part of the processing hole 220 after passing through the source material spraying port 252 in a gas state. On the other hand, the carrier gas may include an inert gas, and in this case, the inert gas may include argon.

On the other hand, the source material supply pipe 520 can be equipped with the heater unit 900. The reason is that the pyrolysis temperature of the source material g is about 175°C, and the pyrolysis temperature of the source material g is included in the operating temperature of the heater unit 900. Therefore, if the heater unit 900 is installed in the source material supply pipe 520, the source material can be pyrolyzed by the high temperature of the heater unit 900.

Moreover, the embodiment of the present invention uses at least one of the purge gas f and the curtain gas c to raise the temperature of the substrate S, so there is no need to heat the source material g to a temperature higher than the vaporization temperature range and then supply it to the substrate S. Therefore, it is possible to prevent the phenomenon that the source material g is pyrolyzed inside the source material supply pipe 520 before reaching the cavity unit 200.

The purge gas supply unit 600 may be connected to the upper portion of the processing hole 220. The purge gas supply unit 600 may include: a purge gas supplier 610, which contains the purge gas f inside and is isolated from the cavity unit 200; a purge gas supply pipe 620, which connects the purge gas supplier 610 and the processing hole 220; and The purge gas flow controller 630 is installed in the purge gas supply pipe 620. The purge gas supplier 610 may be a pressure vessel containing purge gas. The purge gas supply pipe 620 connects the purge gas supply 610 and the cavity unit 200, and a part penetrates the other side of the cavity unit 200 and extends to the inside of the cavity unit 200, and the end can be connected to the purge gas injection port 251.

The purge gas supplier 610 may include a preset pressure vessel that stores the purge gas f. The purge gas f may include an inert gas. The inert gas may include argon. The purge gas supply pipe 620 is connected to the purge gas supply 610 and the purge gas injection port 251, and a part of the purge gas supply pipe 620 may penetrate the other side of the cavity body 210. The purge gas flow controller 630 may be farther from the cavity body 210 and closer to the purge gas supplier 610. The purge gas flow controller 630 may include a mass flow meter MFC operating in a flow range of approximately hundreds to thousands of sccm. The purge gas flow controller 630 controls the flow of the purge gas f. At this time, the flow value of the purge gas f may be greater than the flow value of the source material g.

The curtain air supply unit 700 is installed in the cavity unit 200 and is formed to spray the curtain air c around the outer side of the lower end of the processing hole 220 on one side of the cavity unit 200. That is, the curtain air supply unit 700 may spray the curtain air c to the outside of the processing space 10 through the curtain air injection port 254. The curtain air supply unit 700 may include: a curtain air supplier 710 containing the curtain air c; a curtain air supply pipe 720, a part of which penetrates the other side of the cavity body 210 and connects the curtain air supplier 710 with the curtain air injection port 254 And the curtain air flow controller 730 is installed in the curtain air supply pipe 720 near the curtain air supply 710. The curtain gas c may include an inert gas. The inert gas may include argon. The curtain air flow controller 730 may be provided with a mass flow meter MFC operating in a flow range of hundreds to thousands of sccm. The flow rate of the curtain gas c can be controlled at the same flow rate as the purge gas f or a preset flow rate greater than the flow rate of the purge gas f. The curtain air c can surround the outside of the processing space 10 in a ring shape.

The discharge unit 800 is installed in the cavity unit 200, and the inlet portion may be located at the outer peripheral edge of the lower end of the processing hole 220 on one side of the cavity unit 200. The discharge unit 800 can suck in the air curtain gas c, the source material g, and the purge gas f to eliminate them from the substrate S.

The exhaust unit 800 can suck in various gases, foreign substances, and the like on the substrate S through the first exhaust port 253 and the second exhaust port 255. The exhaust unit 800 may include an exhaust exhauster 810, an exhaust pipe 820, and an exhaust flow controller 830. The exhaust discharger 810 may include a discharge pump or a vacuum pump. In order to avoid interference with the cavity unit 200, the exhaust exhaust 810 may be isolated from the cavity unit 200. A part of the exhaust pipe 820 penetrates the other side of the cavity body 210 and can connect the first exhaust port 253 and the second exhaust port 255 to the exhaust exhauster 810. The exhaust flow controller 830 may include a mass flow meter operating in a flow range of hundreds to thousands of sccm in order to control the exhaust flow. A foreign body screening program (not shown in the figure) can be installed at the preset position of the exhaust pipe 820.

On the other hand, when a growth-type foreign matter occurs on the substrate S, the laser light is shielded by the growth-type foreign matter and cannot form a film on the substrate S. It is necessary to perform a process such as the following again: that is, to deposit a film on the substrate S and disconnect the wiring Partially connected wiring (wiring). In addition, even if the growth-type foreign matter is removed, the metal source components remain in the part where the growth-type foreign matter is removed, and defects such as short circuit (short) or leakage (leakage) may occur.

Therefore, before irradiating the laser light to the substrate S, the substrate S needs to be quickly heated to a temperature that can smoothly deposit the film and prevent the source material g from being vaporized into a solid state.

Therefore, a heater unit 900 is provided to raise the temperature of the purge gas f. Here, the reason why the purge gas f is selected as the heating medium is that the flow rate of the purge gas f among all the gas flows in the processing space 10 is very high, and if the purge gas f is not heated, the purge gas Instead, f acts as a refrigerant in the processing space 10. The very high flow rate of the purge gas f means that the flow rate of the purge gas f is relatively more than that of the source material g and carrier gas.

The heater unit 900 is installed at one side of the purge gas supply unit 600. The heater unit 900 may be installed in the purge gas supply pipe 620 between the purge gas flow controller 630 and the cavity unit 200. In particular, the heater unit 900 can be installed in the purge gas supply pipe 620 in a coaxial manner so that the purge gas f passes through the inside of the heater unit 900 during the flow of the purge gas supply pipe 620.

Here is another way to explain, this way is to cut off one side of the purge gas supply pipe 620 and clamp the heater unit 900 at the cut part, and the heater unit 900 is connected to the purge gas supply pipe 620, The heater unit 900 is installed to one side of the purge gas supply pipe 620. In this way, the purge gas f must pass through the heater unit 900 directly during the process of passing the purge gas supply pipe 620.

The coaxial method refers to a method that is connected in a straight line and then works. In the embodiment, it refers to a manner in which the heater unit 900 and the purge gas supply pipe 620 are integrally installed in a line. That is, in terms of the function of supplying the purge gas f, the heater unit 900 may operate as a part of the purge gas supply pipe 620.

The purge gas f may flow in the order of the purge gas supply 610, the purge gas supply pipe 620, the purge gas flow controller 630, the purge gas supply pipe 620, the heater unit 900, and the purge gas supply pipe 620. The purge gas f may be directly heated by the heater unit 900 through the heater unit 900. Direct heating means that the heat exchange is directly continued between the heater unit 900 and the purge gas f without passing through the purge gas supply pipe 620.

For example, it is difficult to raise the temperature of the purge gas f to the required temperature by winding the purge gas supply tube 620 around the purge gas supply tube 620 to raise the temperature of the purge gas f passing through the inside of the purge gas supply tube 620. For example, the purge gas passes through the purge gas supply pipe 620 within a few seconds or even tens of seconds, so the efficiency of heating the purge gas f outside the purge gas supply pipe 620 is low.

For example, if an additional external heater is installed on the outer peripheral surface of the purge gas supply pipe 620 and the external heater is operated at the same temperature as the heater unit 900 and the temperature of the purge gas f is measured, the measured temperature is lower than the direct temperature The temperature of the purge gas f passing through the heater unit 900 may also be lower than the temperature of the source material g.

Moreover, if the purge gas f needs to be heated to the required temperature within a few seconds or even tens of seconds on the outside of the purge gas supply pipe 620, the operating temperature of the heater unit 900 is required to be very high, which will cause other problems in the deposition apparatus. The components are damaged due to high temperature.

The embodiment mounts the heater unit 900 to the purge gas supply pipe 620 in a coaxial manner, so the thermal efficiency is excellent, and the purge gas f can be easily heated to the desired temperature in a short time of several seconds or even tens of seconds.

On the other hand, the operating temperature of the heater unit 900 is a high temperature of tens to hundreds of degrees Celsius, and can be isolated from the cavity unit 200 at a predetermined distance. For example, it can be installed farther from the cavity unit 200 and closer to the purge gas flow rate. Controller 630. At this time, the layout of the process equipment near the cavity unit 200 can be maintained as it is.

The heater unit 900 may include an outer cylinder 910 that is coaxially mounted to the purge gas supply pipe 620 near the purge gas flow controller 630, is disposed inside the outer cylinder 910, and the inside 950 communicates with the purge gas supply pipe 620 in a coaxial manner. The inner tube 920 of the inner tube, a heating wire 930 disposed inside the inner tube 920, and a power supply line 940 that penetrates the outer tube 910 and the inner tube 920 and is connected to the heating wire 930.

The outer cylinder 910 may also be provided with a cover for shielding heat on the outer surface. The inner cylinder 920 plays a role such as a partition, and is provided with a flow path 950 through which the purge gas f can flow, and can communicate with the purge gas supply pipe 620. On the other hand, the inner peripheral surface of the inner tube 920 can be formed into a bellows shape. The heating wire 930 can generate heat after receiving electrical energy, and can take a coil shape to facilitate the formation of turbulence and heat dissipation. The heating wire 930 can be configured to be parallel to the central axis of the inner cylinder 920.

The heater unit 900 at least contains stainless steel material inside and can be installed in a bellows structure. For example, the heating wire 930 can be made of stainless steel, and the inner cylinder 920 can be installed in a bellows structure. Of course, the outer cylinder 910 and the heating wire 930 may also be made of stainless steel. Therefore, contamination of the purge gas f flowing through the flow path 950 can be prevented.

The heater control unit 1000 can control the operation of the heater unit 900 after detecting the heat transferred from the heater unit 900 to the purge gas flow controller 630 side. The heater control unit 1000 includes: a temperature sensor 1100 installed in the purge gas supply pipe 620 between the heater unit 900 and the purge gas flow controller 630; the controller 1200 receives input from the temperature sensor 1100 When the temperature value is higher than the reference temperature, the heating temperature of the heater unit 900 is temporarily reduced or the heater unit 900 is suspended. Here, the reference temperature refers to the temperature at which the purge gas flow controller 630 can operate.

The heater unit 900 may be further installed on one side of the curtain air supply unit 700. For example, the heater unit 900 can be coaxially installed on the curtain air supply pipe 720, so that the curtain air c can be heated. Also, a heater control unit 1000 may be further provided between the curtain air supply pipe 720 and the heater unit 900 installed therein.

Next, the operation of the deposition apparatus according to the embodiment of the present invention will be described with reference to FIG. 5. According to an embodiment of the present invention, the purge gas f is sprayed to the upper portion of the processing hole 220 at a preset flow rate, and the source material g and the carrier gas are sprayed to the lower portion of the processing hole 220 at a preset flow rate together. The purge gas f, the source material g, and the carrier gas flow into the processing space 10. At this time, the purge gas f heated to a temperature higher than the temperature of the substrate S and the source material g is 60% of the flow rate of all the gases flowing in the processing hole 220. A flow rate of more than% is supplied into the processing space 10, and the substrate S is heated up rapidly. The purge gas f, source material g, and carrier gas supplied to the processing space 10 are sucked into the exhaust pipe 820 after passing through the first exhaust port 253.

At this time, the curtain gas c can be injected to the outside of the processing space 10 through the curtain gas injection port 254. The curtain air c can surround the outside of the processing space 10 in a ring shape. The temperature of the curtain gas c is higher than the temperature of the substrate S and the source material g to prevent heat loss in the processing space 10 and also contribute to the temperature rise of the substrate S. The curtain air c may be sucked into the exhaust pipe 820 through the first exhaust port 253 and the second exhaust port 255. On the other hand, the injection flow rate, injection time, and injection sequence of the purge gas f, the source material g, and the curtain gas c can have many values, and the present invention will not specifically limit them.

When the temperature rise of the substrate S reaches the desired temperature, laser light can be irradiated to the substrate S through the processing hole 220 to deposit a film.

The deposition method of the embodiment of the present invention will be described below with reference to FIGS. 2 to 6. At this time, the embodiment will be described based on the process of repairing defects on the substrate S by depositing a film on the substrate S using the aforementioned deposition device of the embodiment of the present invention.

The deposition method of the embodiment of the present invention is a deposition method for depositing a film on a substrate S supported in the atmosphere, which includes the following processes: preparing the substrate S in the atmosphere; The processing hole 220 of the chamber unit 200 forming the processing space 10 on the upper side supplies the purge gas f; the curtain gas c is sprayed around the outside of the processing space 10; the temperature of the substrate S is adjusted by at least one of the purge gas f and the curtain gas c; The source material g is supplied to the processing space 10 formed between the cavity unit 200 and the substrate S through the processing hole 220 of the cavity unit 200; and one side of the substrate S is irradiated with laser light through the processing hole 220 to form a film.

Here, the process of supplying the purge gas f, the process of spraying the curtain gas c, the process of supplying the source material g, and the process of adjusting the temperature can be performed together, or can be performed sequentially in any order.

Prepare substrate S in the atmosphere. The substrate S is placed on the supporting unit 100, and the cavity unit 200 is disposed on the upper side of the substrate S. At this time, the cavity unit 200 can be heated to a preset temperature higher than the deposition temperature or vaporization temperature of the source material g by a heating unit (not shown in the figure) provided inside. At this time, the temperature of the cavity unit 200 may be such that it can prevent the substrate S heated by the purge gas f from being cooled by the cavity unit 200.

On the other hand, the heating temperature of the cavity unit 200 may be lower than the conventional technology. The reason is that the purge gas f or the purge gas f and the curtain gas c play a significant role in raising the temperature of the substrate S, so it is not necessary to raise the temperature of the chamber unit 200 as in the conventional technique.

For example, in situations such as irradiating the substrate S with laser light or observing the defective part of the substrate S, the problem of gradual blurring of the focal point of the lens on the optical path may occur over time, as in the embodiment of the present invention. If the temperature of the cavity unit 200 is kept low, this problem can be delayed or prevented.

After that, the purge gas f is supplied to the upper portion of the processing hole 220. The purge gas f is supplied to the purge gas injection port 251 by the purge gas supply unit 600, and thereafter, is injected to the upper portion of the processing hole 220. The purge gas f can prevent the source material g from contacting the lower surface of the window 230. The purge gas f may be a window purge gas used to purge the window 230. The purge gas flow controller 630 is used to adjust the flow rate of the purge gas f, for example, it can be controlled to be greater than the flow rate of the source material g. For example, the flow rate of the purge gas f can be adjusted so that the purge gas f flows through the processing hole 220. About 60% of the flow of all gases inside.

At this time, the temperature of the substrate S is adjusted by the purge gas f. The temperature of the purge gas f is adjusted by allowing the purge gas f to pass through the heater unit 900. The heater unit 900 is coaxially installed in the purge gas supply pipe 620 through which the purge gas f passes. The gas f is supplied to the processing hole 220, and the heat of the purge gas f is used to raise the temperature of the substrate S in the processing space 10. That is, the purge gas f can raise the temperature of one side of the substrate S in the processing space 10.

By using the heater unit 900 coaxially installed in the purge gas supply pipe 620, the purge gas f is directly heated to a temperature higher than the target temperature, and the temperature gradually drops as it passes through the purge gas supply pipe 620, and is sprayed to The temperature of the purge gas f when processing the inside of the hole 220 may become the target temperature. For this reason, the heater unit 900 can be operated at a temperature of tens to hundreds of degrees Celsius higher than the target temperature. The purge gas f is heated to a temperature near the operating temperature range of the heater unit 900 while passing through the inside of the heater unit 900.

The target temperature is the temperature at which the purge gas f reaches the processing space 10, and the temperature can be set to the temperature of the purge gas f as follows: that is, the purge gas f can stay in the processing space 10 within a few seconds to tens of seconds. The substrate S is heated to a temperature at which a film can be deposited on the substrate S satisfactorily.

On the other hand, as an example, if the upper limit of the operating temperature of the heater unit 900 is 250°C, the heater unit 900 can be operated at a temperature of, for example, several tens to 250°C. Of course, when the upper limit of the operating temperature changes, the upper limit of the operating temperature range of the heater unit 900 will also change accordingly.

In the process of adjusting the temperature of one side of the substrate S, the heat transferred to the purge gas flow controller 630 located upstream of the heater unit 900 can also be detected based on the flow of the purge gas f, and the heater can be controlled based on the result. Operation of unit 900.

After that, the source material g is supplied to the processing space 10 through the processing hole 220 of the chamber unit 200. That is, the source material g is supplied to the source material ejection port 252 by the source material supply unit 500, and thereafter, is ejected to the lower portion of the processing hole 220. The source material g is in a gas state, and the flow rate of the source material g is controlled at a flow rate of hundreds of sccm by the source material flow controller 530. The source material supply pipe 520 can control or maintain the temperature at a preset temperature near the vaporization temperature of the source material g during the passage of the source material g. Thereby, the gas state of the source material g can be maintained well.

The present invention does not particularly limit the temperature control or temperature maintenance method of the source material supply pipe 520. For example, an additional heating unit (not shown in the figure) may be used to control the temperature of the source material supply pipe 520, or the temperature of the source material g may be used to maintain the temperature of the source material supply pipe 520. The temperature of the source material g may be a temperature range that allows the source material g to maintain the vaporized state well. This temperature range is called the vaporization temperature of the source material g.

The air curtain gas c is sprayed toward the outside of the processing space 10 to isolate the processing space 10 from the atmosphere. At this time, the curtain air c is passed through the heater unit 900 installed in the curtain air supply pipe 720 to increase the temperature of the curtain air c to adjust the temperature of the substrate S. That is, the curtain gas c is also used to raise the temperature of the substrate S. The flow rate of the curtain air c is adjusted by the curtain air flow controller 730, which can be adjusted to be the same as the flow rate of the purge gas f or adjusted to be greater than the flow rate of the purge gas f.

The purge gas f and the air curtain gas c can quickly increase the temperature of the substrate S. Therefore, even if the supply flow rate of the source material g is increased, the growth of foreign matter can be prevented, thereby increasing the thickness of the deposited film and reducing the thickness of the film. resistance. That is, the quality of the film can be improved.

After that, one surface of the substrate S is irradiated with laser light through the processing space 10 to form a film. Thereby, the defects of the substrate S can be repaired.

After the deposition of the film is completed, the irradiation of the laser light is ended, and the purge gas f and the curtain gas c are further injected according to the preset time to control the temperature of the repaired area of the substrate S, so that the deposited film is stabilized. After that, the repair process of the broken wire defect is ended.

While performing the foregoing process, the discharge unit 800 is used to suck in reactants, products, and unreacted substances generated during the process from the outside of the processing space 10 and the outside of the spray area of the curtain gas c and exhaust the substrate S.

FIG. 7 is a picture showing the result of a thin film deposition process to which the deposition apparatus and method of the embodiment of the present invention are applied in comparison with the conventional technology.

Among them, including the use of the deposition apparatus (the deposition apparatus of the comparative example) with the heater unit of the embodiment of the present invention removed in a conventional manner, the repair process of the comparative example, and the use of the deposition apparatus of the embodiment of the present invention according to the present invention The deposition method of the embodiment has undergone a repair process. The source material uses a tungsten source, and the source material temperature, cavity unit temperature, source material flow rate, purge gas flow rate, air curtain gas flow rate, and substrate temperature rise time are the same in the embodiment and the comparative example. The comparative example and the embodiment control the temperature of the cavity unit in the range of 60°C to 65°C. Furthermore, in the embodiment, the film deposition was repeatedly performed by gradually changing the operating temperature of the heater unit within the range of 50°C to 250°C.

In the repair process of the comparative example, growth-type foreign matter occurred on the substrate. Fig. 7(a) is a picture of the result of the repair process of the comparative example. It can be seen that the growth-type foreign matter is formed in the preset area d in (a) of FIG. 7.

In contrast, in the repair process of the embodiment, no growth-type foreign matter is generated and the film is excellently deposited on the substrate. FIG. 7(b) is a picture of the result of one process in the repair process of the embodiment. In more detail, in the result of the repair process of the embodiment, the operating temperature of the heater unit is set to 150°C and the purge gas It is the result of the process that both the temperature of the air curtain and the air curtain are heated and the temperature of the chamber unit is 63°C. Referring to the figure, it can be seen that the film is formed well on the repair position r. Of course, in the repair process where only the purge gas is heated up, it can be seen that no growth-type foreign matter has occurred.

The embodiments of the present invention are only to illustrate the present invention, but not to limit the present invention. The constituent elements and methods disclosed in the embodiments of the present invention can be combined or exchanged into various forms, and these variations should also be regarded as the scope of the present invention. That is, the present invention can be implemented in various forms within the scope of the patent application and its equivalent technical ideas. Those skilled in the art to which the present invention belongs should know that the present invention can fall within the scope of the technical ideas of the present invention. Implement various examples.

Claims (13)

A deposition device includes: a cavity unit arranged on the upper side of a support unit on which a processed object can be placed, a processing hole is formed on the side opposite to the support unit, and a window is provided at the upper end of the processing hole; An injection unit installed to irradiate the processed object with a laser through the processing hole; a source material supply unit connected to the lower part of the processing hole; a purge gas supply unit connected to the upper part of the processing hole A curtain gas supply unit installed in the chamber unit, formed to be able to spray curtain gas to the outside of the processing space formed on the lower side of the processing hole; and a heater unit installed in the purge gas supply unit And one side of at least one of the air curtain air supply units, wherein the air curtain air supply unit includes: a curtain air supply device for accommodating the air curtain air; One side of the chamber unit surrounds a curtain gas injection port outside the lower end of the processing hole and is connected to the curtain gas supplier, wherein the heater unit is coaxially installed on the curtain gas supply pipe so that the curtain gas The air passes through the inside of the heater unit. The deposition apparatus according to item 1 of the scope of patent application, wherein the purge gas supply unit includes: a purge gas supplier, which contains the purge gas inside, and is isolated from the chamber unit; and a purge gas supply pipe , Connect the purge gas supply and the processing hole; and a flow controller installed in the purge gas supply pipe; wherein, the heater unit is between the flow controller and the chamber unit Installed in the purge gas supply pipe. The deposition apparatus according to claim 2, wherein the heater unit is installed in the purge gas supply pipe in a coaxial manner so that the purge gas passes through the inside of the heater unit. The deposition device according to item 3 of the scope of patent application, wherein the heater unit includes: an outer cylinder mounted on the purge gas supply pipe in a coaxial manner; an inner cylinder arranged on the outer cylinder The inside is connected with the purge gas supply pipe in a coaxial manner; a heating wire is arranged inside the inner cylinder; and a power supply wire penetrates the outer cylinder and the inner cylinder and is connected to the heating wire. The deposition apparatus according to claim 2 further includes a heater control unit that detects the heat transferred from the heater unit to the flow controller and controls the operation of the heater unit. The deposition apparatus according to claim 5, wherein the heater control unit includes: a temperature sensor installed in the purge gas between the heater unit and the flow controller Supply pipe; a temperature controller that receives the temperature value input by the temperature sensor, and when it is higher than the reference temperature, it reduces the heating temperature of the heater unit or makes the heater unit pause. The deposition apparatus according to claim 1, wherein the curtain gas supply unit includes a flow controller installed in the curtain gas supply pipe, and the heater unit is connected to the flow controller and the flow controller. The air curtain air supply pipe is installed between the cavity units. The deposition apparatus according to item 7 of the scope of patent application further includes: a heater control unit that detects the heat transferred from the heater unit to the flow controller side and controls the operation of the heater unit. The deposition device according to the first item of the scope of patent application, further comprising: a gas discharge unit installed in the chamber unit, and having an inlet part located on the side of the chamber unit. The outer periphery of the lower end of the hole. A deposition method for depositing a film on a treatment that is supported in the atmosphere, including the following processes: Prepare the processed object in the atmosphere; supply purge gas to the processing hole arranged on the upper side of the processed object in isolation to form a processing space on the upper side of the processed object; spray curtain gas around the outside of the processing space; use At least one of the purge gas and the curtain gas adjusts the temperature of the processed object; supplies source material for the processing space through the processing hole; and irradiates one side of the processed object through the processing hole A laser is used to form a film, wherein the process of adjusting the temperature of the processed object includes the following process: the air curtain gas is passed through a heater unit to adjust the temperature of the air curtain gas, and the heater unit is in a coaxial manner Installed on a curtain air supply pipe that allows the air curtain gas to pass through. The deposition method according to claim 10, wherein the process of adjusting the temperature of the processed object includes the following process: passing the purge gas through a heater unit to adjust the temperature of the purge gas, The heater unit is coaxially installed on a purge gas supply pipe through which the purge gas passes. The deposition method according to item 11 of the scope of patent application, wherein the process of adjusting the temperature of the processed object includes the following process: taking the flow of the purge gas as a reference, aiming at moving from the upstream of the heater unit to The heat transmitted by a flow controller installed in the purge gas supply pipe is detected, and the operation of the heater unit is controlled according to the detection result. The deposition method according to claim 10, wherein the source material includes a tungsten source or a cobalt source, and the purge gas includes an inert gas.

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