CN110373656B

CN110373656B - Deposition apparatus and method

Info

Publication number: CN110373656B
Application number: CN201910287629.1A
Authority: CN
Inventors: 沈珍燮; 卢载雄; 薛捧浩
Original assignee: Charm Engineering Co Ltd
Current assignee: Charm Engineering Co Ltd
Priority date: 2018-04-12
Filing date: 2019-04-11
Publication date: 2021-09-28
Anticipated expiration: 2039-04-11
Also published as: KR20190119426A; TWI742357B; TW201944457A; KR102100801B1; CN110373656A

Abstract

The invention discloses a deposition apparatus and a deposition method suitable for the same, which can prevent growth foreign matters from occurring in a thin film deposition process, the deposition apparatus comprising: a chamber unit disposed at an upper side of the support unit on which the treatment object is placed, having a treatment hole formed at a surface opposite to the support unit, and having a window at an upper end thereof; a laser unit capable of irradiating a processing object with laser light through the processing hole; a source material supply unit connected to a lower portion of the processing hole; a purge gas supply unit connected to an upper portion of the process hole; an air curtain air supply unit which can spray air curtain air to the outer side of the processing space formed at the lower side of the processing hole; and a heater unit installed at one side of at least one of the purge gas supply unit and the curtain gas supply unit.

Description

Deposition apparatus and method

Technical Field

Disclosed are a deposition apparatus and method, and more particularly, a deposition apparatus and method capable of preventing growth of foreign substances in a thin film deposition process.

Background

Various display devices are provided with electronic circuits formed on a substrate. Conductive lines of electronic circuits may be partially broken or shorted during or after the manufacture of the circuit. For example, in a process of manufacturing various display devices including a liquid crystal display, an organic light emitting display, a light emitting display, and the like, electrodes of respective components formed on a substrate, wirings, signal lines, and the like are partially disconnected, and thus a disconnection defect (open fault) occurs.

Therefore, a repair process for repairing a disconnection defect is performed in a process of manufacturing various display devices. The method comprises the steps of carrying out a repair process in the atmosphere by using a repair device in a chemical vapor deposition mode, heating the defective position of the substrate by using heating glass, supplying a metal source in a gas state to the defective position to form a metal source atmosphere, and irradiating a laser deposition film to the defective position.

The repair process in the foregoing manner can be performed in the atmosphere and a metal film having a desired shape can be formed immediately at the disconnection portion. That is, the repair process of the above-described embodiment is not only simple, but also can repair the electrodes, the wirings, and the signal lines of the respective components on the substrate while including them.

FIG. 1 is a graph showing a temperature-pressure legend for a metal source used in a repair process. The lower side of the curve shown in the graph is the "Gas" region and the upper side is the "Solid" region. When the temperature-pressure state of the metal source is in the "Gas" region, the metal source is maintained in a gaseous state, and when the temperature-pressure state of the metal source moves from the "Gas" region to the "Solid" region, the metal source is sublimated into a Solid state.

Referring to fig. 1, in the repair process using the repair apparatus, when the metal source is supplied to the substrate before the substrate is sufficiently heated, a partial pressure (partial pressure) of the metal source with respect to the temperature of the substrate becomes high, and the state of the metal source moves from a "Gas" region to a "Solid" region.

At this time, the metal source is sublimated (deposition) from a gas state to a solid state, and growth foreign matter (crystal) is generated on the substrate. In particular, if the amount of the metal source to be supplied is increased in order to increase the film thickness, the partial pressure of the metal source also increases, and growth of foreign matter is likely to occur.

In order to avoid the occurrence of growth foreign matter, the substrate temperature needs to be rapidly increased. The prior art utilizes heated glass to heat the substrate. However, this method has problems such as requiring a high installation cost, and causing a blind area where the substrate is not heated or the outer corner of the substrate has a low temperature due to the ito (indium Tin oxide) film state of the heating glass (heating glass).

Background of the invention the background of the invention is disclosed in the following patent documents.

Documents of the prior art

Patent document 1: KR 10-2016-0116184A

Patent document 2: KR 10-2005-

Disclosure of Invention

Disclosed are a deposition apparatus and method capable of rapidly increasing the temperature of a gas supplied to a substrate when performing thin film deposition using an in-line type heater unit.

The invention discloses a deposition apparatus and a method capable of improving the heating efficiency of gas supplied to a substrate when a heater unit of a coaxial mode is used for thin film deposition.

The invention discloses a deposition apparatus and a method capable of preventing contamination of a gas supplied to a substrate when a thin film is deposited using a heater unit of a coaxial system.

The invention discloses a deposition device and a method capable of preventing pyrolysis of source materials during thin film deposition.

The invention discloses a deposition device and a method capable of preventing growth foreign matters from occurring during thin film deposition.

A deposition apparatus according to an embodiment of the present invention includes: a chamber unit disposed at an upper side of a support unit on which a treatment object is placed, a treatment hole formed at a surface opposite to the support unit, and a window formed at an upper end of the treatment hole; a laser unit which can be installed through the processing hole to irradiate the processed object with laser; a source material supply unit connected to a lower portion of the processing hole; a purge gas supply unit connected to an upper portion of the process hole; an air curtain gas supply unit installed in the chamber unit and configured to spray air curtain gas to an outside of a processing space formed at a lower side of the processing hole; and a heater unit installed at one side of at least one of the purge gas supply unit and the gas curtain gas supply unit.

The purge gas supply unit includes: a purge gas supplier which accommodates a purge gas therein and is isolated from the chamber unit; a purge gas supply pipe connecting the purge gas supplier and the process hole; and a flow controller installed at the purge gas supply pipe; the heater unit may be mounted to the purge gas supply pipe between the flow controller and the chamber unit.

The heater unit may be coaxially installed at the purge gas supply pipe so as to pass the purge gas through the inside of the heater unit.

The heater unit includes: an outer cylinder coaxially installed at the purge gas supply pipe; an inner cylinder disposed inside the outer cylinder and having the purge gas supply pipe coaxially communicated therein; a hot wire disposed inside the inner tube; and a power supply line penetrating the outer and inner cylinders and connected to the hot wire.

A heater control unit may be included to control the operation of the heater unit after detecting heat transferred from the heater unit to the flow controller side.

The heater control unit includes: a temperature sensor installed at the purge gas supply pipe between the heater unit and the flow controller; and the temperature controller is used for receiving the temperature value input by the temperature sensor, and reducing the temperature rise temperature of the heater unit or enabling the heater unit to pause when the temperature value is higher than the reference temperature.

The air curtain air supply unit includes: an air curtain air supplier for accommodating air curtain air; and an air curtain air supply pipe connecting an air curtain air injection port formed on one surface of the chamber unit around the outer side of the lower end of the processing hole with the air curtain air supplier; the heater unit is coaxially installed at the air curtain air supply pipe so as to pass the air curtain air through the inside of the heater unit.

The air curtain gas supply unit may include a flow controller installed at the air curtain gas supply pipe, and the heater unit may be installed at the air curtain gas supply pipe between the flow controller and the chamber unit.

A gas discharge unit may be included, which is installed at the chamber unit with an inlet portion located at an outer circumferential edge of a lower end of the processing hole of the one face of the chamber unit.

The deposition method according to an embodiment of the present invention is a deposition method for depositing a film on a treatment material supported in the atmosphere, and includes the following steps: preparing the treated object in the atmosphere; supplying a purge gas to a process hole separately disposed at an upper side of the process object to form a process space at the upper side of the process object; injecting a curtain gas around the outside of the processing space; adjusting the temperature of the treatment object by using at least one of the purge gas and the gas curtain gas; supplying source material to the process space through the process aperture; and irradiating one surface of the processed object with laser through the processing hole to form a film.

The process of adjusting the temperature of the process object may include adjusting the temperature of the purge gas by passing the purge gas through a heater unit coaxially installed at a purge gas supply pipe through which the purge gas passes.

The process of adjusting the temperature of the processing object includes a process of detecting heat transferred from the upstream of the heater unit to a flow controller installed at the purge gas supply pipe based on the flow of the purge gas, and controlling the operation of the heater unit according to the result.

The process of adjusting the temperature of the treatment object includes a process of adjusting the temperature of the curtain gas by passing the curtain gas through a heater unit installed in a coaxial manner at a curtain gas supply pipe through which the curtain gas passes.

The source material may include a tungsten source or a cobalt source, and the purge gas may include an inert gas.

According to the embodiment of the present invention, the heater unit of the coaxial type is installed on the gas supply pipe connecting the flow controller and the chamber unit, so that the temperature of the gas supplied to the substrate can be rapidly raised by the chamber unit when the thin film deposition is performed, the temperature raising efficiency can be improved, and the pollution can be prevented. The gas can be a purge gas or a gas curtain gas or a purge gas and a gas curtain gas.

In particular, since the heater unit of the coaxial type is installed in the purge gas supply pipe to heat the purge gas occupying 60% or more of the flow rate of all the gas supplied to the defective portion of the substrate, the defective portion of the substrate can be quickly heated to a desired temperature and can be stably heated. All of the aforementioned gases include source materials, purge gases, and carrier gases.

Furthermore, the temperature of the substrate is raised by the purge gas and the gas curtain gas without unnecessarily raising the temperature of the source material excessively, thereby preventing the pyrolysis of the source material.

Therefore, the thin film deposition process can be smoothly performed, the quality of the deposited film can be improved, and the occurrence of growth foreign matter can be prevented from the source.

Drawings

FIG. 1 is a graph showing a temperature-pressure legend for a metal source.

Fig. 2 is a block diagram of a deposition apparatus according to an embodiment of the present invention.

Fig. 3 is a schematic view of a chamber unit according to an embodiment of the present invention.

Fig. 4 is a bottom view of a chamber unit of an embodiment of the present invention.

Fig. 5 is a sectional view of a chamber unit of an embodiment of the present invention.

Fig. 6 is a simulation diagram of a heater unit according to an embodiment of the present invention.

Fig. 7 is a photograph comparatively showing the results of a thin film deposition process to which the deposition apparatus and method according to the embodiment of the present invention are applied, and the prior art.

(reference numerals)

100: support unit 200: cavity unit

300: the laser unit 400: optical unit

500: the source material supply unit 600: purge gas supply unit

700: air curtain air supply unit 800: discharge unit

900: the heater unit 1000: heater control unit

Detailed Description

Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, and the present invention may be implemented in various forms different from each other, and these embodiments are only for facilitating the complete disclosure of the present invention, and the main purpose thereof is to fully explain the scope of the present invention to those having ordinary skill in the art to which the present invention pertains. In order to explain the embodiments of the present invention, the drawings may be exaggerated and the same symbols represent the same constituent elements in the drawings.

Fig. 2 is a block diagram of a deposition apparatus according to an embodiment of the present invention, and fig. 3 is a schematic view of a chamber unit according to an embodiment of the present invention. Fig. 4 is a bottom view of a chamber unit according to an embodiment of the present invention, fig. 5 is a sectional view of the chamber unit according to the embodiment of the present invention, and fig. 6 is a simulation view of a heater unit according to the embodiment of the present invention.

The deposition apparatus according to an embodiment of the present invention is described in detail below with reference to fig. 2 to 6.

The deposition apparatus of the embodiment of the present invention includes: a chamber unit 200 disposed above the support unit 100, having a processing hole 220 formed on one surface thereof, and a window 230 formed at an upper end of the processing hole 220, a laser unit 300 installed to irradiate a laser to a processing object through the processing hole 220, a source material supply unit 500 connected to a lower portion of the processing hole 220, a purge gas supply unit 600 connected to an upper portion of the processing hole 220, a curtain gas supply unit 700 installed at the chamber unit 200 and formed to spray a curtain gas c to an outside of a processing space 10 formed below the processing hole 220, and a heater unit 900 installed at one side of at least one of the purge gas supply unit 600 and the curtain gas supply unit 700.

The deposition apparatus of an embodiment of the present invention may further include: a support unit 100 for supporting the processing object, an optical unit 400 installed between the laser unit 300 and the chamber unit 200, a discharge unit 800 installed in the chamber unit 200, and at least one heater control unit 1000 for detecting heat transferred to a flow controller of at least one of the purge gas supply unit 600 and the gas curtain gas supply unit 700 and controlling the operation of the heater unit 900 according to the detection result.

The deposition apparatus of the embodiment of the present invention may be used as a repair apparatus that deposits a film on a process object (e.g., a substrate S) in the atmosphere by chemical vapor deposition.

The processed object is a substrate S on which various electronic component manufacturing processes are performed or on which the processes are completed, and may include, for example, a glass substrate on one surface of which gate lines, data lines, pixels, thin film transistors, and the like are formed. The substrate S may be placed in the support unit 100 or placed in the atmosphere.

The source material may comprise a metal source. The metal source may include a cobalt (Co) source. Alternatively, the metal source may comprise a tungsten (W) source. At this time, the cobalt source is better in conductivity than the tungsten (W) source and smaller in molecular size. Therefore, the film can be deposited on the substrate S more effectively with the cobalt source than with the tungsten source. The source material may be supplied to the processing hole 220 in a vaporized state, that is, in a gaseous state.

The cobalt source is vaporized at about 35 c and the tungsten source is vaporized at about 75 c. Therefore, the gasification temperature range of the cobalt source is a preset temperature range including 35 ℃, and the gasification temperature range of the cobalt source is a preset temperature range including 75 ℃.

The source material may be supplied to the process holes 220 after being controlled to a preset temperature within a deposition temperature range or a vaporization temperature range. The deposition temperature range may be a temperature range of the source material g when the film is well deposited on the substrate S, and at least a portion may overlap with the vaporization temperature range.

The deposition temperature range can be derived theoretically based on various physical properties of the source material g or experimentally obtained by repeatedly depositing a thin film.

The support unit 100 may mount the substrate S on the upper surface. The support unit 100 may include a table glass. The support unit 100 may be provided with a sorting mechanism (not shown) for adjusting the position of the substrate S to a predetermined position in the x-axis direction and the y-axis direction, and may be provided with a lift rod (not shown) and a vacuum chuck (not shown) for supporting the substrate S in the z-axis direction. On the other hand, the support unit 100 may be mounted on an upper surface of a table (not shown).

A loading unit (not shown) may be installed on the upper surface of the table. The loading unit and the supporting unit 100 are movably installed relatively. The chamber unit 200 may be installed at the loading unit.

The chamber unit 200 may be disposed above the support unit 100 or may be disposed in the atmosphere. The chamber unit 200 may be moved in x-axis, y-axis, and z-axis directions by the loading unit. A processing hole 220 may be formed through a surface (e.g., a lower surface) of the chamber unit 200 opposite to the support unit 100. A window 230 may be provided at an upper end of the process hole 220 and allow a lower end of the process hole 220 to be opened toward the substrate S. The chamber unit 200 may provide the process space 10 to the lower side of the process hole 220 using the process hole 220.

The processing space 10 may be a space formed at a lower side of the processing hole 220 between the chamber unit 200 and the substrate S and having a predetermined size and shape. Alternatively, the processing space 10 may be a space including the aforementioned space and the peripheral portion.

The chamber unit 200 may include a chamber body 210, a process hole 220, a window 230, a clamp 240, a purge gas injection port 251, a source material injection port 252, a first exhaust port 253, a curtain gas injection port 254, and a second exhaust port 255.

The chamber body 210 may be fabricated by stacking a plurality of plates in the Z-axis direction. The chamber body 210 may include a lower surface 211, an upper surface 212, and a side surface connecting edges of the lower surface 211 and the upper surface 212 along the z-axis direction. The lower surface 211 may be opposite the substrate S, and the upper surface 212 may be opposite the optical unit 400. The size and shape of the chamber body 210 are not particularly limited in the present invention. The chamber body 210 may have a predetermined size and may have a shape of an elliptical plate on one side and a quadrangular plate on the other side. The chamber body 210 is formed with a processing hole 220 at one side and may be installed at the loading unit at the other side. Also, a source material supply unit 500, a purge gas supply unit 600, a curtain gas supply unit 700, and a discharge unit 800 may be installed at the other side of the chamber body 210.

The lower end of the process hole 220 is located at a predetermined position of the lower surface 211, an annular first exhaust surface a1 is formed around the outer side of the lower end of the process hole 220, an annular curtain air injection surface a2 is formed around the outer side of the first exhaust surface a1, and an annular second exhaust surface A3 may be formed on the outer side of the curtain air injection surface a 2. The first exhaust surface a1, the curtain gas injection surface a2, and the second exhaust surface A3 may all be formed on the lower surface 211 to form concentric circles around the lower end of the process hole 220. It is possible to locate the upper end of the processing hole 220 at a predetermined position of the upper surface 212 and to install the window 230 and the clamp 240 at the upper end of the processing hole 220.

The first exhaust port 253 may be formed penetrating the first exhaust surface a1 in the z-axis direction, and the curtain air injection port 254 may be formed penetrating the curtain air injection surface a2 in the z-axis direction. The second exhaust port 255 may be formed to penetrate the second exhaust surface a3 in the z-axis direction. The first exhaust port 253, the second exhaust port 255, and the curtain gas injection port 254 may be arranged at a plurality of positions spaced apart in a circumferential direction around the lower end of the process hole 220. The first exhaust port 253 and the second exhaust port 255 may be connected to the exhaust unit 800 and the curtain gas injection port 254 may be connected to the curtain gas supply unit 700.

The first exhaust port 253 and the second exhaust port 255 can suck the purge gas f, the source material g, the carrier gas, the curtain gas c, and various foreign substances, which are released from the process space 10 formed under the process holes 220. The curtain gas injection port 254 annularly injects a curtain gas c around the processing space 10 to isolate the processing space 10 from the atmosphere.

A first exhaust chamber (not shown) may be formed between the first exhaust port 253 and the exhaust pipe 820 of the exhaust unit 800. A second exhaust chamber (not shown) may be formed between the second exhaust port 255 and the exhaust pipe 820. The first and second exhaust chambers are each formed in a ring shape inside the chamber body 210 and around the outside of the process hole 220. The exhaust pipe 820 is connected to the first exhaust chamber and the second exhaust chamber, the first exhaust chamber is connected to the first exhaust port 253, and the second exhaust chamber is connected to the second exhaust port 255.

An air curtain air supply chamber (not shown) may be formed between the air curtain air injection port 254 and the air curtain air supply pipe 720 of the air curtain air supply unit 700. The curtain air supply chamber is formed in a ring shape inside the chamber body 210, and may surround the outside of the first exhaust chamber. The curtain gas supply chamber may receive curtain gas c from curtain gas supply pipe 720 and distribute the curtain gas c to curtain gas injection ports 254.

The process holes 220 may extend through the lower surface 211 and into the interior of the chamber body 210. The lower end of the processing hole 220 communicates with the processing space 10, and the source material may be supplied to the processing space 10 through the lower end of the processing hole 220. The processing hole 220 may be formed such that the inner diameter is narrowed in a direction from the upper end toward the lower end. For example, the processing hole 220 may be in the shape of a rotator. The process hole 220 may have a source material injection port 252 formed through the inner circumferential surface of the lower portion, and a purge gas injection port 251 formed through the inner circumferential surface of the upper portion.

The processing hole 220 extends in the z-axis direction, an upper portion of the processing hole 220 is a portion extending from an upper end of the processing hole 220 where the window 230 is installed to a preset height between an upper end and a lower end of the processing hole 220, and a lower portion of the processing hole 220 is a portion extending from the aforementioned preset height of the processing hole 220 to a lower end of the processing hole 220.

The source material ejection port 252 is connected to the source material supply unit 500 and may eject the source material g toward the process holes 220. The purge gas injection port 251 is connected to the purge gas supply unit 600 and may inject the purge gas f to the process hole 220. The source material injection ports 252 may be formed at a plurality of locations spaced along the circumferential direction of the process hole 220. The purge gas injection ports 251 may be formed at a plurality of locations spaced along the circumferential direction of the process holes 220.

A source material supply chamber (not shown) may be provided between the source material injection port 252 and the source material supply pipe 520 of the source material supply unit 500. The source material supply chamber may be formed inside the chamber body 220 around the outside of the process hole 220. The source material supply chamber is connected to a source material supply pipe 520 to receive the source material g and to the source material ejection port 252, and may distribute the source material g to the source material ejection port 252.

A purge gas supply chamber (not shown) may be provided between the purge gas injection port 251 and the purge gas supply pipe 620 of the purge gas supply unit 600. For example, the purge gas supply chamber may be formed in a ring shape around the process hole 220 inside the chamber body 210. The purge gas supply chamber may receive the purge gas f from the purge gas supply pipe 620 and distribute the purge gas f to the purge gas injection port 251.

The window 230 can seal the upper end of the processing hole 220. The inside of the processing hole 220 may be isolated from the upper side of the chamber unit 200 by means of the window 230. The window 230 may comprise a quartz material to allow the laser radiation to pass through. The periphery of the window 230 may be mounted with a clip 240. The clamp 240 may be provided with a seal (not shown). The seal can seal between the window 230 and the upper surface 212. The lower surface of the window 230 may be protected from the source material g by the purge gas f.

The laser unit 300 may be installed by irradiating the substrate S with a laser beam through the processing hole 220. The laser beam may pass through the processing hole 220 and the processing space 10 and then be irradiated to the substrate S.

The laser unit 300 is isolated from the upper side of the optical unit 400 and functions to generate a laser ray. The laser unit 300 irradiates a defect position of the substrate S with a laser beam to cut the wiring or supplies energy to a portion where the wiring is to be formed in a cobalt source atmosphere to locally deposit a film at the defect position of the substrate S.

The laser unit 300 may include components such as a laser oscillator (not shown) that generates laser beam, a mirror (not shown) that guides the laser beam to an objective lens of the optical unit 400, a slit (not shown) that can adjust the form of the laser beam between the mirror and the optical unit 400, a beam expander (not shown) that adjusts the size of the laser beam between the laser oscillator and the mirror, and a tube lens (not shown) that prevents the laser beam from spreading between the optical unit 400 and the slit.

The optical unit 400 may adjust the optical path and focus of the laser ray between the chamber unit 200 and the laser unit 300. The optical unit 400 may include an objective lens (not shown). The objective lens compresses the laser beam into a high energy density and focuses the laser beam on the substrate S. The optical unit 400 may include a camera (not shown), a mirror (not shown) for photographing, and an illumination unit (not shown) in order to monitor a thin film deposition state of the substrate S. The optical unit 400 may further include a mirror (not shown) for controlling a traveling direction of the laser beam, and at least two curved lenses (not shown) for increasing an incident angle of the laser beam with respect to the objective lens.

The source material supply unit 500 is connected to a lower portion of the processing hole 220 and can supply the source material to the lower portion of the processing hole 220. The source material supply unit 500 may include a source material supply 510, a source material supply tube 520, a source material flow controller 530, a carrier gas supply 540, and a carrier gas supply tube 550.

The source material supplier 510 can be isolated from the chamber unit 200. The source material supplier 510 may include a tank (canister) in which the source material is stored in a powder form. The source material supplier 510 may be provided with a heating means (not shown) for vaporizing the source material. The heating means may include various hot wires that generate heat upon receiving power. The heating tool can heat the inside of the source material supplier 510 to vaporize the source material. The source material supply pipe 520 may connect between the source material supplier 510 and the chamber unit 200. On the other hand, a portion of the source material supply pipe 520, which penetrates the other side of the chamber unit 200 and extends to the inside of the chamber unit 200, may be connected to the source material injection port 252.

The source material flow controller 530 may be installed at the source material supply pipe 520. The source material flow controller 530 should be isolated from the chamber unit 200 by a predetermined distance according to an optimized layout of process equipment derived to minimize interference with a thin film deposition process performed on the substrate S. Accordingly, the source material flow controller 530 may be located farther from the chamber unit 200 and closer to the source material supplier 510. The source material flow controller 530 may be provided with a mass flow meter MFC operating at a flow range of approximately hundreds to thousands of sccm. The source material flow controller 530 may control the flow of the source material.

The carrier gas supplier 540 is provided with a pressure container in which the carrier gas is stored, and the carrier gas supply pipe 550 may connect the carrier gas supplier 540 and the source material supplier 510. The carrier gas is supplied to the source material supplier 510 through the carrier gas supply pipe 550, so that the source material and the carrier gas can be supplied to the source material supply pipe 520. Thereafter, the source material may be injected to the lower portion of the process hole 220 after passing through the source material injection port 252 in a gas state. In another aspect, the carrier gas may comprise an inert gas, in which case the inert gas may comprise argon.

On the other hand, the heater unit 900 may be installed in the source material supply pipe 520 because the pyrolysis temperature of the source material g is about 175 ℃ and the pyrolysis temperature of the source material g is included in the range of the operating temperature of the heater unit 900, so that the source material g can be pyrolyzed by the high temperature of the heater unit 900 when the heater unit 900 is installed in the source material supply pipe 520.

Further, the embodiment of the present invention heats the substrate S using at least one of the purge gas f and the curtain gas c, so it is not necessary to heat the source material g to a temperature higher than the vaporization temperature range and supply it to the substrate S. Therefore, a phenomenon in which the source material g is pyrolyzed inside the source material supply pipe 520 before reaching the chamber unit 200 can be prevented.

The purge gas supply unit 600 may be connected to an upper portion of the process hole 220. The purge gas supply unit 600 may include a purge gas supply 610 receiving the purge gas f therein and isolated from the chamber unit 200, a purge gas supply pipe 620 connecting the purge gas supply 610 and the process hole 220, and a purge gas flow controller 630 installed at the purge gas supply pipe 620. The purge gas supply 610 may be a pressure vessel that houses a purge gas therein. The purge gas supply pipe 620 connects between the purge gas supply 610 and the chamber unit 200, a portion penetrates the other side of the chamber unit 200 and extends to the inside of the chamber unit 200, and an end may be connected to the purge gas injection port 251.

The purge gas supplier 610 may include a preset pressure vessel storing the purge gas f. The purge gas f may comprise an inert gas. The inert gas may include argon. The purge gas supply pipe 620 connects the purge gas supply unit 620 with the purge gas injection port 251, and a portion of the purge gas supply pipe 620 may penetrate the other side of the chamber body 210. The purge gas flow controller 630 may be located further from the chamber body 210 and closer to the purge gas supply 620. The purge gas flow controller 630 may comprise a mass flow instrument MFC operating at a flow range of approximately hundreds to thousands of sccm. The purge gas flow controller 630 controls the flow of the purge gas f, and at this time, the flow value of the purge gas f may be greater than that of the source material g.

The air curtain gas supply unit 700 is installed in the chamber unit 200, and may be formed to inject the air curtain gas c around the outer side of the lower end of the processing hole 220 at one surface of the chamber unit 200. That is, the curtain gas supply unit 700 may inject the curtain gas c to the outside of the processing space 10 through the curtain gas injection port 254. The air curtain air supply unit 700 may include: an air curtain air supplier 710 for accommodating air curtain air c therein; an air curtain air supply pipe 720 partially penetrating the other side of the chamber body 210 and connecting the air curtain air supplier 710 with the air curtain air injection port 254; and an air curtain air flow controller 730 installed at the air curtain air supply pipe 720 near the air curtain air supplier 710. The gas curtain gas c may include an inert gas. The inert gas may include argon. The gas curtain gas flow controller 730 may be provided with a mass flow meter MFC operating over a flow range of hundreds to thousands of sccm. The flow rate of the gas curtain gas c may be controlled at the same flow rate as the purge gas f or a preset flow rate greater than the flow rate of the purge gas f. The air curtain c may surround the outside of the processing space 10 in a ring shape.

The discharge unit 800 is installed at the chamber unit 200, and the inlet portion may be located at an outer circumferential edge of a lower end of the processing hole 220 of one face of the chamber unit 200. The exhaust unit 800 may suck the curtain gas c, the source material g, and the purge gas f to be eliminated from the substrate S.

The exhaust unit 800 may suck various gases and foreign substances, etc. on the substrate S through the first exhaust port 253 and the second exhaust port 255. The exhaust unit 800 may include an exhaust discharger 810, an exhaust pipe 820, and an exhaust flow controller 830. The exhaust discharger 810 may include a discharge pump or a vacuum pump. In order to avoid interference with the chamber unit 200, the exhaust discharger 810 may be isolated from the chamber unit 200. A portion of the exhaust pipe 820 penetrates the other side of the chamber body 210, and may connect the first exhaust port 253 and the second exhaust port 255 to the exhaust discharger 810. The exhaust flow controller 830 may include a mass flow meter operating at a flow range of hundreds to thousands of sccm to control the exhaust flow. A foreign substance filter (not shown) may be installed at a predetermined position of the exhaust pipe 820.

On the other hand, when an elongated foreign substance is generated on the substrate S, the laser beam is shielded by the elongated foreign substance and a film cannot be formed on the substrate S, and it is necessary to perform a new process such as deposition of a film on the substrate S and wiring (wiring) for connecting disconnected portions of the wiring. In addition, even if the growth foreign matter is removed from the portion where the growth foreign matter has occurred, the metal source component remains, and a failure such as a short circuit (short) or a leakage (leak) occurs.

Therefore, before the substrate S is irradiated with the laser beam, the substrate S needs to be rapidly heated to a temperature at which the film can be smoothly deposited and the source material g is prevented from being vaporized into a solid state.

Therefore, the heater unit 900 is provided to warm the purge gas f. The reason why the purge gas f is selected as the temperature increasing medium is that the flow rate of the purge gas f is very high among the flow rates of all the gases in the processing space 10, and if the temperature of the purge gas f is not increased, the purge gas f rather acts as a refrigerant in the processing space 10. The very high flow rate occupied by the purge gas f means that the flow rate of the purge gas f is relatively more than that of the source material g and the carrier gas.

The heater unit 900 is installed at one side of the purge gas supply unit 600. The heater unit 900 may be installed at the purge gas supply pipe 620 between the purge gas flow controller 630 and the chamber unit 200. In particular, the heater unit 900 may be coaxially installed at the purge gas supply pipe 620 so as to allow the purge gas f to pass through the inside of the heater unit 900 during the flow of the purge gas supply pipe 620.

Here, the heater unit 900 may be attached to one side of the purge gas supply pipe 620 by another way of cutting one side of the purge gas supply pipe 620 and sandwiching the heater unit 900 between the cut portions to connect the purge gas supply pipe 620 to the heater unit 900. Accordingly, the purge gas f must pass through the heater unit 900 directly during the process of passing through the purge gas supply pipe 620.

The coaxial type refers to a type of operation after being connected in a line, and in the embodiment, refers to a type of integrally installing the heater unit 900 and the purge gas supply pipe 620 in a line. That is, the heater unit 900 may operate as a part of the purge gas supply pipe 620 in terms of a function of supplying the purge gas f.

The purge gas f may flow in the order of the purge gas supply 610, the purge gas supply pipe 620, the purge gas flow controller 630, the purge gas supply pipe 630, the heater unit 900, and the purge gas supply pipe 630. The purge gas f may be directly heated by the heater unit 900 through the heater unit 900. The direct heating means that heat exchange is directly continued between the heater unit 900 and the purge gas f not through the purge gas supply pipe 630.

For example, it is difficult to heat the purge gas f to a desired temperature by winding the purge gas supply pipe 620 around the outside of the purge gas supply pipe 620 to heat the purge gas f passing through the inside of the purge gas supply pipe 620. For example, since the purge gas passes through the purge gas supply pipe 620 within several seconds to several tens of seconds, the efficiency of heating the purge gas f outside the purge gas supply pipe 620 is low.

For example, if an additional external heater is installed on the outer circumferential surface of the purge gas supply pipe 620 and the external heater is operated at the same temperature as the heater unit 900 and the temperature of the purge gas f is measured, the measured temperature is lower than the temperature of the purge gas f directly passing through the heater unit 900 and may also be lower than the temperature of the source material g.

Further, if the purge gas f needs to be heated to a desired temperature outside the purge gas supply pipe 620 within several seconds to several tens of seconds, the operating temperature of the heater unit 900 is required to be very high, which may cause damage to other components of the deposition apparatus due to high temperature.

The embodiment is to install the heater unit 900 to the purge gas supply pipe 620 in a coaxial manner, and thus is excellent in thermal efficiency and also to easily heat the purge gas f to a desired temperature in a short time of several seconds to several tens of seconds.

On the other hand, the heater unit 900 is operated at a high temperature of several tens to several hundreds of degrees celsius, and can be separated from the chamber unit 200 by a predetermined distance, for example, can be installed relatively close to the purge gas flow controller 630 by being relatively distant from the chamber unit 200. At this time, the process equipment layout near the chamber unit 200 may be maintained as it is.

The heater unit 900 may include an outer cylinder 910 coaxially mounted to the purge gas supply pipe 620 near the purge gas flow controller 630, an inner cylinder 920 disposed inside the outer cylinder 910 and having an interior 950 coaxially communicating with the purge gas supply pipe 620, a hot wire 930 disposed inside the inner cylinder 920, and a power supply line 940 penetrating the outer cylinder 910 and the inner cylinder 920 and connected to the hot wire 930.

The outer cylinder 910 may be further provided with a cover for shielding heat on an outer surface. The inner cylinder 920 functions as a partition plate, and has a flow path 950 through which the purge gas f flows, and is connected to the purge gas supply pipe 620. On the other hand, the inner circumferential surface of the inner tube 920 may be formed in a bellows shape. The hot wire 930 may receive electricity to generate heat, for example, and may take the shape of a coil to facilitate turbulent flow and heat dissipation. The hot wire 930 can be disposed parallel to the central axis of the inner barrel 920.

The heater unit 900 contains at least a stainless steel material inside and can be installed in a bellows structure. For example, the hot wire 930 may comprise stainless steel, and the inner tube 920 may be mounted in a bellows structure. Of course, the outer tube 910 and the hot wire 930 may be made of stainless steel. Therefore, contamination of the purge gas f flowing through the flow path 950 can be prevented.

The heater control unit 1000 may control the operation of the heater unit 900 by detecting heat transferred from the heater unit 900 to the purge gas flow controller 630 side. The heater control unit 1000 includes: a temperature sensor 1100 installed at the purge gas supply pipe 620 between the heater unit 900 and the purge gas flow controller 630; the controller 1200 receives the temperature value input from the temperature sensor 1100, and temporarily lowers the temperature of the heater unit 900 or suspends the heater unit 900 when the temperature value is higher than a reference temperature. Here, the reference temperature refers to a temperature at which the purge gas flow controller 630 may operate.

A heater unit 900 may be further installed at one side of the air curtain air supply unit 700. For example, the heater unit 900 may be coaxially mounted to the curtain gas supply pipe 720, allowing the curtain gas c to be heated. Also, a heater control unit 1000 may be further provided between the curtain air supply pipe 720 and the heater unit 900 mounted thereto.

The operation of the deposition apparatus according to the embodiment of the present invention will be described with reference to fig. 5. According to an embodiment of the present invention, the purge gas f is injected at a preset flow rate to the upper portion of the process hole 220, and the source material g is injected at a preset flow rate together with the carrier gas to the lower portion of the process hole 220. The purge gas f, the source material g, and the carrier gas flow into the process space 10, and at this time, the purge gas f, which is heated to a temperature higher than the temperatures of the substrate S and the source material g, is supplied into the process space 10 at a flow rate of 60% or more of the flow rate of all the gases flowing in the process holes 220, thereby rapidly heating the substrate S. The purge gas f, the source material g, and the carrier gas supplied to the processing space 10 are drawn into the exhaust pipe 820 after passing through the first exhaust port 253.

At this time, the curtain gas c may be injected to the outside of the processing space 10 through the curtain gas injection port 254. The air curtain c may surround the outside of the processing space 10 in a ring shape. The temperature of the curtain gas c is higher than the temperature of the substrate S and the source material g to prevent heat loss from the processing space 10 and also to contribute to the temperature rise of the substrate S. The curtain gas c may be drawn into the discharge pipe 820 through the first exhaust port 253 and the second exhaust port 254. On the other hand, the ejection flow rates, the ejection times, and the ejection sequences of the purge gas f, the source material g, and the curtain gas c may have many values, and the present invention is not particularly limited.

When the temperature of the substrate S is raised to a desired temperature, a laser beam may be irradiated to the substrate S through the processing hole 220 to deposit a film.

The deposition method according to the embodiment of the present invention is described below with reference to fig. 2 to 6. At this time, the embodiment will be described with reference to a process of repairing a defect by depositing a film on the substrate S using the deposition apparatus according to the embodiment of the present invention.

The deposition method of the embodiment of the present invention is a deposition method of depositing a film on a substrate S supported in the atmosphere, which includes the following processes: preparing a substrate S in the atmosphere; supplying a purge gas f to the process holes 220 of the chamber unit 200 separately disposed at the upper side of the substrate S to form the process space 10 at the upper side of the substrate S; spraying a curtain gas c around the outside of the processing space 10; adjusting the temperature of the substrate S by using at least one of the purge gas f and the gas curtain gas c; supplying a source material g to a process space 10 formed between the chamber unit 200 and the substrate S through a process hole 220 of the chamber unit 200; and irradiating one surface of the substrate S with a laser beam through the processing hole 220 to form a film.

Here, the process of supplying the purge gas f, the process of spraying the gas curtain gas c, the process of supplying the source material g, and the process of adjusting the temperature may be performed together, or may be performed sequentially in an arbitrary order.

The substrate S is prepared in the atmosphere. The substrate S is placed on the support unit 100, and the chamber unit 200 is disposed above the substrate S. At this time, the chamber unit 200 can be raised to a preset temperature higher than the deposition temperature or the vaporization temperature of the source material g by means of a heating unit (not shown) provided inside. At this time, the temperature of the chamber unit 200 may be set to a level that can prevent the substrate S heated by the purge gas f from being cooled by the chamber unit 200.

On the other hand, the temperature rise of the chamber unit 200 may be lower than that of the related art. The reason for this is that the purge gas f or the purge gas f and the gas curtain gas c play a great role in raising the temperature of the substrate S, and therefore, it is not necessary to raise the temperature of the chamber unit 200 as in the conventional technique.

For example, in a case where a laser beam is irradiated to the substrate S or a defective portion of the substrate S is observed, a problem that a focal point of a lens on a light path is gradually blurred with the lapse of time may occur, and if the temperature of the chamber unit 200 is low as in the embodiment of the present invention, the problem may be delayed or prevented.

Thereafter, the purge gas f is supplied to the upper portion of the process hole 220. The purge gas f is supplied to the purge gas injection port 251 by the purge gas supply unit 600, and then injected to the upper portion of the process hole 220. The purge gas f may prevent the source material g from contacting the lower surface of the window 230. The purge gas f may be a window purge gas used to purge the window 230. The flow of the purge gas f is adjusted by the purge gas flow controller 630, for example, to be greater than the flow of the source material g, and for example, the flow of the purge gas f may be adjusted so as to make the flow of the purge gas f about 60% of the flow of all the gas flowing through the inside of the process hole 220.

At this time, the temperature of the substrate S is adjusted by the purge gas f. The temperature of the purge gas f is adjusted by passing the purge gas f through a heater unit 900, the heater unit 900 is coaxially installed at a purge gas supply pipe 620 through which the purge gas f passes, the temperature-adjusted purge gas f is supplied to the process holes 220, and the substrate S is heated in the process space 10 by the heat of the purge gas f. That is, the purge gas f may heat one surface of the substrate S in the process space 10.

By directly raising the temperature of the purge gas f to a temperature higher than the target temperature by means of the heater unit 900 coaxially installed at the purge gas supply pipe 620, the temperature gradually decreases while passing through the purge gas supply pipe 620, and the temperature of the purge gas f may become the target temperature when being injected into the inside of the process hole 220. For this reason, the heater unit 900 can operate at a temperature of several tens to several hundreds of degrees c higher than the target temperature. The purge gas f is heated up to a temperature near the operating temperature range of the heater unit 900 during passing through the inside of the heater unit 900.

The target temperature is a temperature at which the purge gas f reaches the processing space 10, and may be set to a temperature of the purge gas f that can heat the substrate S to a temperature at which a film can be favorably deposited on the substrate S within the processing space 10 for several seconds to several tens of seconds.

On the other hand, as an example, if the upper limit of the operating temperature of the heater unit 900 is 250 ℃, the heater unit 900 may operate at a temperature of, for example, several tens to 250 ℃. Of course, when the upper limit of the operating temperature is changed, the upper limit of the operating temperature range of the heater unit 900 is also changed.

In the process of adjusting the temperature of the one surface of the substrate S, the heat transferred to the purge gas flow controller 630 located upstream of the heater unit 900 may be detected based on the flow of the purge gas f and the operation of the heater unit 900 may be controlled based on the detected heat.

Thereafter, the source material g is supplied to the processing space 10 through the processing hole 220 of the chamber unit 200. That is, the source material g is supplied to the source material ejection port 252 by the source material supply unit 500, and then ejected to the lower portion of the process hole 220. The source material g is in a gas state, and the flow rate of the source material g is controlled by the source material flow controller 530 at a flow rate of several hundred sccm. The source material supply pipe 520 can control or maintain the temperature at a preset temperature around the vaporization temperature of the source material g during the passage of the source material g. Thereby, the gas state of the source material g can be maintained well.

The present invention is not particularly limited to the manner of controlling or maintaining the temperature of the source material supply pipe 520. For example, the temperature of the source material supply tube 520 may be controlled using an additional heating unit (not shown), or the temperature of the source material g may be used to maintain the temperature of the source material supply tube 520. The temperature of the source material g may be in a temperature range in which the source material g can maintain a good vaporized state. This temperature range is referred to as the vaporization temperature of the source material g.

The gas curtain gas c is injected toward the outside of the processing space 10 so that the processing space 10 is isolated from the atmosphere. At this time, the temperature of the substrate S is adjusted by passing the curtain gas c through the heater unit 900 installed at the curtain gas supply pipe 720 to increase the temperature of the curtain gas c. That is, the gas curtain gas c is also used for the temperature rise of the substrate S. The flow rate of the gas curtain c is adjusted by the gas curtain flow rate controller 730 to be the same as or larger than the flow rate of the purge gas f.

The purge gas f and the gas curtain gas c can rapidly increase the temperature of the substrate S, so that growth of foreign substances can be prevented even if the supply flow rate of the source material g is increased, whereby the thickness of the deposited film can be increased and the resistance of the film can be reduced. That is, the quality of the film can be improved.

After that, one surface of the substrate S is irradiated with a laser beam through the processing space 10 to form a film. Thereby, the defect of the substrate S can be repaired.

After the deposition of the film is completed, the irradiation of the laser beam is terminated, and the purge gas f and the gas curtain gas c are further injected according to a preset time to control the temperature of the repaired region of the substrate S, so that the deposited film is stabilized. And finally, finishing the repairing process of the broken line defect.

While the above-described processes are performed, the reactant, the product, and the unreacted material generated when the process is performed are sucked outside the processing space 10 and outside the injection region of the gas curtain gas c by the exhaust unit 800 and exhausted on the substrate S.

The repair process of the comparative example was performed in the conventional manner using the deposition apparatus from which the heater unit of the embodiment of the present invention was removed (the deposition apparatus of the comparative example), and the repair process was performed using the deposition apparatus of the embodiment of the present invention using the deposition method of the embodiment of the present invention. The source material used was a tungsten source, and the source material temperature, chamber unit temperature, source material flow rate, purge gas flow rate, gas curtain flow rate, and substrate temperature rise time were the same for the examples and comparative examples. Comparative examples and examples the temperature of the chamber unit was controlled in the range of 60 ℃ to 65 ℃. Also, the embodiment repeatedly performs the thin film deposition while varying the operating temperature of the heater unit in stages within the range of 50 ℃ to 250 ℃.

The repair process of the comparative example generated growth of foreign matter on the substrate. Fig. 7 (a) is a photograph showing the results of the repair process of the comparative example. It can be seen that growth foreign matter is formed in the predetermined region d of fig. 7 (a).

In contrast, the repair process of the embodiment deposits a film on the substrate excellently without growth of foreign matter. Fig. 7 (b) is a photograph showing the result of one of the repair processes of the example, and more particularly, the result of performing the process in which the operating temperature of the heater unit is set to 150 c, the temperature of both the purge gas and the curtain gas is increased, and the temperature of the chamber unit is set to 63 c in the result of performing the repair process of the example. Referring to this figure, it can be seen that the film is well formed on the repair site r. Of course, it can be seen that no growth of foreign matter occurs in the repair process with only the purge gas being warmed up.

The described embodiments of the present invention are intended to be illustrative of the invention and are not intended to be limiting of the invention. The components and modes disclosed in the above embodiments of the present invention may be combined with or cross each other to form various forms, and these modifications should be regarded as the scope of the present invention. That is, the present invention can be implemented in various forms within the scope of the claims and the technical idea of the equivalent thereof, and those skilled in the art to which the present invention pertains will appreciate that the present invention can be implemented in various embodiments within the technical idea of the present invention.

Claims

1. A deposition apparatus, characterized in that,

the method comprises the following steps:

a chamber unit disposed at an upper side of a support unit on which a treatment object is placed, a treatment hole formed at a surface opposite to the support unit, and a window formed at an upper end of the treatment hole;

a laser unit which can be installed through the processing hole to irradiate the processed object with laser;

a source material supply unit connected to a lower portion of the processing hole;

a purge gas supply unit connected to an upper portion of the process hole;

an air curtain gas supply unit installed in the chamber unit and configured to spray air curtain gas to an outside of a processing space formed at a lower side of the processing hole; and

a heater unit installed at one side of at least one of the purge gas supply unit and the gas curtain gas supply unit,

wherein the heater unit includes:

an outer cylinder coaxially installed at the purge gas supply pipe;

an inner cylinder disposed inside the outer cylinder and having the purge gas supply pipe coaxially communicated therein;

a heat wire disposed inside the inner tube and having a coil shape so as to facilitate formation of turbulence and heat dissipation;

and a power supply line penetrating the outer and inner cylinders and connected to the hot wire.

2. The deposition apparatus of claim 1,

the purge gas supply unit includes:

a purge gas supplier which accommodates a purge gas therein and is isolated from the chamber unit;

a purge gas supply pipe connecting the purge gas supplier and the process hole; and

a flow controller installed at the purge gas supply pipe;

the heater unit is mounted to the purge gas supply pipe between the flow controller and the chamber unit.

3. The deposition apparatus of claim 2,

the flow controller includes a heater control unit that controls the operation of the heater unit after detecting heat transferred from the heater unit to the flow controller side.

4. The deposition apparatus of claim 3,

the heater control unit includes:

a temperature sensor installed at the purge gas supply pipe between the heater unit and the flow controller;

and the temperature controller is used for receiving the temperature value input by the temperature sensor, and reducing the temperature rise temperature of the heater unit or enabling the heater unit to pause when the temperature value is higher than the reference temperature.

5. The deposition apparatus of claim 1,

the air curtain air supply unit includes:

an air curtain air supplier for accommodating air curtain air; and

an air curtain gas supply pipe connecting an air curtain gas injection port formed on one surface of the chamber unit around the outside of the lower end of the processing hole with the air curtain gas supplier;

the heater unit is coaxially installed at the air curtain air supply pipe so as to pass the air curtain air through the inside of the heater unit.

6. The deposition apparatus of claim 5,

the air curtain gas supply unit includes a flow controller installed at the air curtain gas supply pipe,

the heater unit is mounted to the air curtain air supply pipe between the flow controller and the chamber unit.

7. Deposition apparatus according to claim 6,

8. The deposition apparatus of claim 1,

the gas discharge unit is installed in the chamber unit, and the inlet portion is located at the outer periphery of the lower end of the processing hole on the one surface of the chamber unit.

9. A deposition method for depositing a film on a treatment supported in the atmosphere,

comprises the following steps:

preparing the treated object in the atmosphere;

supplying a purge gas to a process hole separately disposed at an upper side of the process object to form a process space at the upper side of the process object;

injecting a curtain gas around the outside of the processing space;

adjusting the temperature of the treatment object by using at least one of the purge gas and the gas curtain gas;

supplying source material to the process space through the process aperture;

irradiating one surface of the processed object with laser through the processing hole to form a film,

wherein the process of adjusting the temperature of the treatment substance includes at least one of the following processes,

adjusting the temperature of the purge gas by passing the purge gas through a heater unit installed in a coaxial manner in a process of passing a purge gas supply pipe through which the purge gas passes,

adjusting the temperature of the curtain gas by passing the curtain gas through a heater unit installed in a coaxial manner in a process of passing the curtain gas through a curtain gas supply pipe,

the heater unit includes:

an outer cylinder coaxially installed at the purge gas supply pipe;

10. The deposition method according to claim 9,

the process of adjusting the temperature of the treatment substance includes the following processes,

the heat transferred from the upstream of the heater unit to a flow controller attached to the purge gas supply pipe is detected based on the flow of the purge gas, and the operation of the heater unit is controlled based on the result.

11. The deposition method according to claim 9,

the source material comprises a tungsten source or a cobalt source, and the purge gas comprises an inert gas.