CN110373656A - Precipitation equipment and method - Google Patents
Precipitation equipment and method Download PDFInfo
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- CN110373656A CN110373656A CN201910287629.1A CN201910287629A CN110373656A CN 110373656 A CN110373656 A CN 110373656A CN 201910287629 A CN201910287629 A CN 201910287629A CN 110373656 A CN110373656 A CN 110373656A
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- gas
- unit
- purge gas
- heater
- temperature
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Abstract
The present invention discloses a kind of precipitation equipment and the deposition method suitable for this, the precipitation equipment and it can prevent growing foreign matter from occurring in thin film deposition processes suitable for this deposition method, the precipitation equipment includes: chamber unit, the upside for the supporter configured in placement processed material, it is formed with processing hole on one side in opposite with supporter, is equipped with window in the upper end in processing hole；Laser cell can irradiate laser to processed material by processing hole；Source material supply unit is connected to the lower part in processing hole；Purge gas supply unit is connected to the top in processing hole；Gas curtain gas supply unit can be formed in which spray gas curtain gas to the outside for the processing space being formed on the downside of processing hole；And unit heater, it is mounted on the side of at least one of purge gas supply unit and gas curtain gas supply unit.
Description
Technical field
The present invention discloses a kind of precipitation equipment and method, and in more detail, the present invention discloses one kind and can deposit in film
The precipitation equipment and method that technique prevents growing foreign matter from occurring.
Background technique
Various display devices are equipped with the electronic circuit being formed on substrate.Manufacture of the conductor wire of electronic circuit in circuit
It might have a part in journey or after manufacture and broken string or short circuit occur.For example, manufacture include liquid crystal display or
In the technique of the various display devices of organic light emitting display or active display etc., it is formed in the electricity of each component on substrate
A part broken string of pole or wiring or signal wire etc. and disconnection defect (open fault) occurs.
Therefore, it will do it the renovation technique for repairing disconnection defect in the technique for manufacturing various display devices.Utilize chemistry
The prosthetic device of vapor deposition mode carries out renovation technique in an atmosphere, is heated up using heating glass by the defective locations of substrate
Afterwards, source metal atmosphere is formed to the source metal of defective locations supply gaseous state, laser deposition film is irradiated to defective locations.
The renovation technique of foregoing manner can carry out in an atmosphere and can be formed immediately at broken string position have required shape
The metal film of shape.Also that is, the renovation technique of foregoing manner not only renovation technique is simple, moreover it is possible to the electricity of each component on substrate
Pole, wiring and signal wire are integrally incorporated in be repaired interiorly.
Fig. 1 is the curve graph for showing the temperature and pressure legend of the source metal for renovation technique.Curve shown in curve graph
Here is the area " Gas " and is above the area " Solid ".Source metal maintains gas when the temperature and pressure state of source metal is the area " Gas "
State, if the temperature and pressure state of source metal is moved to the area " Solid " from the area " Gas ", source metal is sublimed into solid state.
Referring to Fig. 1, being first supply substrate before allowing substrate sufficiently to heat when carrying out renovation technique using prosthetic device
If source metal, the source metal partial pressure (partial pressure) compared to temperature of substrate is got higher, and the state of source metal is then
The area " Solid " is moved to from the area " Gas ".
At this point, source metal distils (sublimation) into solid state from gaseous state, growing foreign matter then occurs for substrate
(crystal).Especially, if the supply for increasing source metal in order to increase film thickness, the partial pressure of source metal also become larger and
It is easy to happen growing foreign matter.
In order to avoid growing foreign matter occurs, need quickly to improve substrate temperature.The prior art is heated using heating glass
Substrate.But but there is following problems for which, for example, it is desired to high mounting cost, it is also possible to because of heating
ITO (the Indium Tin Oxide) membrane stage of glass (heating glass) and substrate is not heated or substrate
Exterior angle there is the lower blind area of temperature.
Background technique of the invention discloses in following many patent documents.
Existing technical literature
Patent document 1:KR 10-2016-0116184 A
Patent document 2:KR 10-2005-0017164 A
Summary of the invention
The energy when present invention discloses a kind of unit heater progress film deposition for using coaxial manner (in-line type)
The precipitation equipment and method for being supplied to the temperature of gas of substrate are improved rapidly.
The present invention, which discloses a kind of unit heater using coaxial manner and can improve when film deposition, is supplied to substrate
Gas heating efficiency precipitation equipment and method.
The present invention discloses a kind of unit heater using coaxial manner and carries out to prevent from being supplied to substrate when film deposition
Gaseous contamination precipitation equipment and method.
The present invention discloses the precipitation equipment that source material can be prevented to be pyrolyzed when a kind of progress film deposition and method.
The present invention discloses the precipitation equipment that can prevent growing foreign matter from occurring when a kind of progress film deposition and method.
The precipitation equipment of implementation form of the invention includes: chamber unit, and configuration can dispose the supporter of processed material
Upside, is formed with processing hole in opposite with the supporter on one side, is equipped with window in the upper end in the processing hole；Laser list
Member can install with laser processed material irradiation by the processing hole；Source material supply unit is connected to the processing hole
Lower part；Purge gas supply unit is connected to the top in the processing hole；Gas curtain gas supply unit is mounted on the chamber list
Member can be formed in which spray gas curtain gas to the outside for the processing space being formed on the downside of the processing hole；And unit heater, installation
At least some side in the purge gas supply unit and the gas curtain gas supply unit.
The purge gas supply unit includes: purge gas power supply unit, and receiving purge gas in inside is isolated from the chamber
Unit；Purge gas supply pipe connects the purge gas power supply unit and the processing hole；And flow controller, it is mounted on institute
State purge gas supply pipe；The unit heater can be installed on described between the flow controller and the chamber unit
Purge gas supply pipe.
The unit heater can be mounted on the purge gas supply pipe with coaxial manner to allow the purge gas
By the inside of the unit heater.
The unit heater includes: outer cylinder, is mounted on the purge gas supply pipe with coaxial manner；Inner cylinder, configuration
It is internal that the purge gas supply pipe is connected to coaxial manner in the inside of the outer cylinder；Hot line configures in the inner cylinder
Portion；Power supply line through the outer cylinder and inner cylinder and is connected to hot line.
It may include heater control unit, after detecting the heat that the unit heater passes to the flow controller side
Control the running of the unit heater.
The heater control unit includes: temperature sensor, the unit heater and the flow controller it
Between be installed on the purge gas supply pipe；Temperature controller receives the temperature value that the temperature sensor is inputted, and is higher than base
The warming temperature of the unit heater is reduced when quasi- temperature or the unit heater is allowed to suspend.
The gas curtain gas supply unit includes: gas curtain gas power supply unit, inside receiving gas curtain gas；And gas curtain gas supply pipe,
It is supplied in the gas curtain gas blowout loophole and the gas curtain gas that the one side of the chamber unit is formed around the outside for handling hole lower end
Device is answered to be connected；The unit heater with coaxial manner is mounted on the purge gas supply pipe to allow the gas curtain gas
By the inside of the unit heater.
The gas curtain gas supply unit includes the flow controller for being mounted on the gas curtain gas supply pipe, the heater list
Member can be installed on the gas curtain gas supply pipe between the flow controller and the chamber unit.
It may include heater control unit, detect the heat that the unit heater passes to the flow controller side
The running of the unit heater is controlled afterwards.
May include gas vent unit, be mounted on the chamber unit, inlet location in the chamber unit described one
The outboard peripheries of the processing hole lower end in face.
The deposition method of implementation form of the invention is the deposition method to the processed material deposition film supported in atmosphere,
Including following process: being ready for processed material in an atmosphere；To be isolator configured on the upside of the processed material so as in the processed material
Upside formed processing space processing hole supply purge gas；Gas curtain gas is sprayed around the outside of the processing space；Benefit
With in the purge gas and the gas curtain gas at least some adjust the temperature of the processed material；It is by the processing hole
The processing space supplies source material；Film is formed to a surface irradiation laser of the processed material by the processing hole.
The process for adjusting the processed material temperature may include following process, also that is, allowing the purge gas by heating
Device unit and the temperature for adjusting the purge gas, which is mounted on coaxial manner allows the purge gas to pass through
Purge gas supply pipe.
It include following process during adjusting the processed material temperature, also that is, the flowing with the purge gas is
Benchmark, for the heat transmitted from the upstream of the unit heater toward the flow controller for being mounted on the purge gas supply pipe
It is detected, the running of unit heater is controlled according to its result.
The process for adjusting the processed material temperature includes following process, also that is, allowing the gas curtain gas by unit heater
And the temperature of the gas curtain gas is adjusted, which is mounted on the gas curtain gas for allowing the gas curtain gas to pass through with coaxial manner and supplied
Ying Guan.
The source material may include tungsten source or cobalt source, and the purge gas may include inert gas.
Implementation form according to the present invention is pacified the feed tube connected between flow controller and chamber unit
It fills the unit heater of coaxial manner and is able to the transit chamber unit when carrying out film deposition and improves the gas for being supplied to substrate rapidly
The temperature of body improves heating efficiency, prevents from polluting.Here, gas can be purge gas or gas curtain gas either purge gas
With gas curtain gas.
Especially, it is able to be supplied to actually allowing in the unit heater of purge gas supply pipe installation coaxial manner
60% or more purge gas heating is occupied in all gas flow on the defective locations of substrate, therefore can be the defect of substrate
Position is rapidly heated to required temperature, moreover it is possible to steadily heat up.Here, aforementioned all gas include source material, purge gas and
Carrier gas.
Moreover, being heated up by substrate without source material temperature is optionally excessively mentioned using purge gas and gas curtain gas
It is high, moreover it is possible to whereby to prevent the pyrolysis of source material.
Therefore, thin film deposition processes can be successfully carried out, the quality of deposited film can be improved, prevented from source
The generation of growing foreign matter.
Detailed description of the invention
Fig. 1 is the curve graph for showing the temperature and pressure legend of source metal.
Fig. 2 is the block figure of the precipitation equipment of the embodiment of the present invention.
Fig. 3 is the skeleton diagram of the chamber unit of the embodiment of the present invention.
Fig. 4 is the bottom view of the chamber unit of the embodiment of the present invention.
Fig. 5 is the cross-sectional view of the chamber unit of the embodiment of the present invention.
Fig. 6 is the simulation drawing of the unit heater of the embodiment of the present invention.
Fig. 7 is for the result of thin film deposition processes of the precipitation equipment and method for being applicable in the embodiment of the present invention and existing
The photo that technology is shown with being compared.
(appended drawing reference)
100: supporter 200: chamber unit
300: laser cell 400: optical unit
500: source material supply unit 600: purge gas supply unit
700: gas curtain gas supply unit 800: exhaust unit
900: unit heater 1000: heater control unit
Specific embodiment
The embodiment that the invention will now be described in detail with reference to the accompanying drawings.But the present invention is not limited to following revealed embodiment,
The present invention can realize that these embodiments only contribute to complete announcement of the invention by various mutually different forms,
Main purpose is completely to illustrate scope of the invention to person with usual knowledge in their respective areas of the present invention.In order to illustrate this hair
Bright embodiment may exaggerate display attached drawing, in attached drawing there is same symbol person to represent same inscape.
Fig. 2 is the block figure of the precipitation equipment of the embodiment of the present invention, and Fig. 3 is the skeleton diagram of the chamber unit of the embodiment of the present invention.
Fig. 4 is the bottom view of the chamber unit of the embodiment of the present invention, and Fig. 5 is the cross-sectional view of the chamber unit of the embodiment of the present invention, and Fig. 6 is this hair
The simulation drawing of the unit heater of bright embodiment.
Below with reference to the precipitation equipment of Fig. 2 to Fig. 6 the present invention will be described in detail embodiment.
The precipitation equipment of the embodiment of the present invention includes: configuration in the upside of supporter 100, is formed with processing hole on one side
220, in chamber unit 200 of the upper end equipped with window 230 for handling hole 220, processed material irradiation can be pacified with laser by processing hole 220
The laser cell 300 of dress, is connected to processing 220 top of hole at the source material supply unit 500 for being connected to processing 220 lower part of hole
Purge gas supply unit 600 is mounted on chamber unit 200 and can handle the processing space 10 on the downside of hole 220 to being formed in
The gas curtain gas supply unit 700 that is formed to outside injection gas curtain gas c is mounted on purge gas supply unit 600 and gas curtain gas and supplies
Answer the unit heater 900 of at least side of some in unit 700.
The precipitation equipment of the embodiment of the present invention can also include: the supporter 100 for supporting processed material, be mounted on laser cell
Optical unit 400 between 300 and chamber unit 200, the exhaust unit 800 for being mounted on chamber unit 200, for passing to purge gass
In body supply unit 600 and gas curtain gas supply unit 700 heat of at least flow controller of some carry out detection and according to
Testing result controls at least one heater control unit 1000 of the running of unit heater 900.
The precipitation equipment of the embodiment of the present invention can be used as prosthetic device use, and the prosthetic device is with chemical vapor deposition side
Formula deposits to film the processed material (for example, substrate S) in atmosphere.
Processed material is the substrate S for carrying out various electronic component manufacturing process on one side or completing the technique, example
Such as, it may include it is formed with gate lines, data lines, pixel and thin film transistor (TFT) etc. on one side glass-type substrate.Substrate S can be with
It is placed in supporter 100, or is placed in atmosphere.
Source material may include source metal.Source metal may include the source cobalt (Co).Alternatively, source metal may include tungsten (W)
Source.At this point, the electrical conductance of cobalt source is better than the tungsten source (W) and molecule is smaller.Therefore, using can be than using tungsten source more can be when cobalt source
Deposition film on substrate S.Source material can be with vaporized state, also that is, processing hole 220 can be supplied to gaseous state.
Cobalt source nearby gasifies at about 35 DEG C, and tungsten source is nearby gasified at about 75 DEG C.Therefore, the gasification temperature range of cobalt source
It is the preset temperature range for including 35 DEG C, the gasification temperature range of cobalt source is the preset temperature range for including 75 DEG C.
Processing is supplied to after the preset temperature that source material can be controlled within the scope of deposition temperature range or gasification temperature
Hole 220.The temperature range of source material g when deposition temperature range can be on substrate S deposition film well, at least partially may be used
To be overlapped with gasification temperature range.
Deposition temperature range can rely on theoretical export or thin by depositing repeatedly based on the various physical property of source material g
Empirically obtain to film.
Supporter 100 can dispose substrate S in upper surface.Supporter 100 may include table top glass.Supporter
100 are equipped with the ordering mechanism (not shown) for substrate S location being adjusted to x-axis direction and y-axis direction predeterminated position, can be equipped with
The lifting pin (not shown) and vacuum chuck (not shown) of substrate S are supported in z-axis direction.On the other hand, supporter 100 can be with
It is mounted on the upper surface of workbench (not shown).
Load units (not shown) can be installed in the upper surface of workbench.Load units can be opposite with supporter 100
Movably install.It can be in load units installation cavity unit 200.
Chamber unit 200 can be only fitted to the upside of supporter 100, also can be only fitted in atmosphere.Chamber unit 200 can be with
It is mobile in x-axis, y-axis and z-axis direction using load units.It can be the one side of the chamber unit 200 opposite with supporter 100
(such as lower surface) is penetratingly formed processing hole 220.Window 230 can be equipped in the upper end in processing hole 220 and allow processing
The lower end in hole 220 is open towards substrate S.Chamber unit 200 can use processing hole 220 and provide processing to handle the downside in hole 220
Space 10.
Processing space 10, which can be, to be formed in 220 downside of processing hole between chamber unit 200 and substrate S and has default
The space of size and shape.Alternatively, processing space 10 can be the space including aforesaid space and device peripheral portion.
Chamber unit 200 may include chamber ontology 210, processing hole 220, window 230, clamping piece 240, purge gas jet port
251, source material jet port 252, first row port 253, gas curtain gas blowout loophole 254 and second exhaust port 255.
Chamber ontology 210 can be made along the multiple plates of Z-direction lamination.Chamber ontology 210 may include lower surface 211,
The side at upper surface 212 and the along the z-axis direction edge of connection lower surface 211 and upper surface 212.Lower surface 211 can and base
Plate S is opposite, and upper surface 212 then can be opposite with optical unit 400.The present invention be not particularly limited chamber ontology 210 size and
Shape.Chamber ontology 210 can have a pre-set dimension, and shape can be that side is ellipse and the other side is Square consisting of two isosceles right-angled triangles.Chamber sheet
The side of body 210 is formed with processing hole 220 and the other side then may be mounted at load units.Furthermore, it is possible in chamber ontology 210
The other side is installed by source material supply unit 500, purge gas supply unit 600, gas curtain gas supply unit 700 and exhaust unit
800。
The lower end in processing hole 220 is located at the predeterminated position of lower surface 211, the outside landform around the lower end in processing hole 220
Circlewise first exhaust face A1, around the outside landform circlewise gas curtain gas jet face A2 of first exhaust face A1, gas curtain gas jet
The outside of face A2 can form the second exhaust face A3 of ring-shaped.It can allow first exhaust face A1, gas curtain gas jet face A2 and
Two deflation area A3 are constituted concentric circles form centered on being formed entirely on lower surface 211 and the lower end to handle hole 220.It can allow
The upper end in processing hole 220 is located at the predeterminated position of upper surface 212 and upper end installation window 230 and clamping piece in processing hole 220
240。
First exhaust mouth 253 can be formed through first exhaust face A1 in z-axis direction, gas can be run through in z-axis direction
Form gas curtain gas blowout loophole 254 to curtain gas jet face A2.Furthermore, it is possible to form the through second exhaust face A3 in z-axis direction
Two exhaust outlets 255.First row port 253, second exhaust port 255 and gas curtain gas blowout loophole 254 can be arranged in along around place
Manage multiple positions of the circumferencial direction isolation of the lower end in hole 220.First row port 253 and 255 row of may be connected to of second exhaust port
Put unit 800 and gas curtain gas blowout loophole 254 then may be connected to gas curtain gas supply unit 700.
First row port 253 and second exhaust port 255 can suck de- from the processing space 10 for being formed in 220 downside of processing hole
Separate out purge gas f, source material g, carrier gas, gas curtain gas c and the various foreign matters come.Gas curtain gas blowout loophole 254 surrounds processing space
10 ground with ring-type injection gas curtain gas c are able to that processing space 10 is allowed to be isolated from atmosphere.
First row gas chamber can also be formed between first row port 253 and the exhaust pipe 820 of exhaust unit 800 (not scheme
Show).Furthermore, it is also possible to form second row gas chamber (not shown) between second exhaust port 255 and exhaust pipe 820.First exhaust
Room and second row gas chamber are respectively formed in the inside of chamber ontology 210 with annular and around the outside in processing hole 220.Exhaust pipe
820 connection first row gas chambers and second row gas chamber, first row gas chamber are connected to first row port 253, second row gas chamber connection second
Exhaust outlet 255.
Gas can also be formed between gas curtain gas blowout loophole 254 and the gas curtain gas supply pipe 720 of gas curtain gas supply unit 700
Curtain gas supply room (not shown).Gas curtain gas supply room is formed in the inside of chamber ontology 210 with annular, can surround first row gas chamber
Outside.Gas curtain gas supply room distributes to gas curtain gas blowout loophole 254 after can receiving gas curtain gas c from gas curtain gas supply pipe 720.
Processing hole 220 can run through lower surface 211 and extend to the inside of chamber ontology 210.The lower end for handling hole 220 connects
Logical processing space 10, source material can be supplied to processing space 10 by handling the lower end in hole 220.In processing hole 220 can allow
Diameter is formed with narrowing along the direction from upper end toward lower end.For example, processing hole 220 can be rotary body shape.Handling hole 220 can
To form source material jet port 252 through the inner peripheral surface of lower part, the inner peripheral surface on top can be run through purge gas spray is formed
Loophole 251.
Hole 220 is handled with the extension of z-axis direction, the top in processing hole 220 is from the upper of the processing hole 220 for being mounted with window 230
End extends to the part of the preset height between the top and bottom in processing hole 220, and the lower part in processing hole 220 is from processing hole
220 aforementioned preset height extends to the part of processing 220 lower end of hole.
Source material jet port 252 is connected to source material supply unit 500 and can spray source material g to processing hole 220.
Purge gas jet port 251 is connected to purge gas supply unit 600 and can spray purge gas f to processing hole 220.Source
Material jet port 252 can be formed in multiple positions of the circumferencial direction isolation along processing hole 220.Purge gas jet port 251
Multiple positions of the circumferencial direction isolation along processing hole 220 can be formed in.
Source can also be equipped between source material jet port 252 and the source material supply pipe 520 of source material supply unit 500
Material supply room (not shown).Source material supply room can be formed in the interior of chamber ontology 220 around the outside for handling hole 220
Portion.Source material supply room is connected to source material supply pipe 520 and receives source material g and be connected to source material jet port 252, can be with
Source material g is distributed to source material jet port 252.
It can also be between purge gas jet port 251 and the purge gas supply pipe 620 of purge gas supply unit 600
Equipped with purge gas supply room (not shown).As an example, purge gas supply room can be centered on handling hole 220 with annular shape
At in the inside of chamber ontology 210.Handle is blown after purge gas supply room can receive purge gas f from purge gas supply pipe 620
It sweeps gas f and distributes to purge gas jet port 251.
The upper end in 230 energy encapsulation process hole 220 of window.The internal insulation in processing hole 220 can be allowed in chamber unit by window 230
200 upside.Window 230 may include quartz material to allow laser beam to pass through.The periphery of window 230 can install clamping piece
240.Clamping piece 240 can be equipped with sealing element (not shown).Sealing element can be being sealed between window 230 and upper surface 212.It can
To allow the lower surface of window 230 to avoid injury by source material g by purge gas f.
Laser cell 300 can be installed by processing hole 220 to substrate S with irradiating laser beam.Laser beam can lead to
Substrate S is irradiated to after crossing processing hole 220 and processing space 10.
Laser cell 300 is isolated from the upside of optical unit 400 and plays the function of generating laser beam.Laser list
Member 300 irradiates laser beam to the defective locations of substrate S and cuts off wiring or under cobalt source atmosphere to the quasi- portion for forming wiring
Point supplying energy and be able to the defective locations locally deposition film in substrate S.
Laser cell 300 may include such as following constituent element, also that is, generating the laser oscillator of laser beam (not
Diagram), laser beam directed into optical unit 400 object lens mirror (not shown), can be in mirror and optical unit 400
Between adjust laser beam form slit (not shown), laser beam size is adjusted between laser oscillator and mirror
Beam expanding lens (not shown), the tube lens (not shown) for preventing laser beam from spreading between optical unit 400 and slit.
Optical unit 400 can adjust the optical path and focus of laser beam between chamber unit 200 and laser cell 300.
Optical unit 400 may include object lens (not shown).Laser beam is compressed into high-energy density and laser beam by object lens
Focus on substrate S.Optical unit 400, which may include camera (not shown), mirror for shooting (not shown) and lighting unit, (does not scheme
Show) to monitor the film sedimentation state of substrate S.Moreover, optical unit 400 can also include control laser beam direction of travel
Mirror (not shown), increase relative to object lens laser beam incidence angle at least two curved lens (not shown).
Source material supply unit 500 is connected to the lower part in processing hole 220 and can be the lower part source of supply material in processing hole 220
Material.Source material supply unit 500 may include source material power supply unit 510, source material supply pipe 520, source material flow controller
530, carrier gas power supply unit 540 and carrier gas supply pipe 550.
Source material power supply unit 510 can be isolated from chamber unit 200.Source material power supply unit 510 may include inside it with powder
The tank (canister) of form storage source material.Source material power supply unit 510 can be equipped with the heating tool for allowing source material to gasify (not
Diagram).Heating tool may include the various hot lines for receiving to generate heat after power supply.Heating tool can be to source material power supply unit 510
Inside heating allows source material to gasify.Source material supply pipe 520 can be being subject between source material power supply unit 510 and chamber unit 200
Connection.On the other hand, a part of source material supply pipe 520 runs through the other side of chamber unit 200 and extends to chamber unit 200
It is internal, it may be connected to source material jet port 252.
Source material flow controller 530 may be mounted at source material supply pipe 520.Source material flow controller 530 should
It is laid out according to following optimization and chamber unit 200 is isolated from pre-determined distance, optimization layout is enterprising with substrate S in order to reduce to the greatest extent
The optimization layout of interference between capable thin film deposition processes and derived process equipment.Therefore, source material flow controller 530
It can be from the source material power supply unit 510 farther out and relatively of chamber unit 200.Source material flow controller 530 can be equipped with big
The mass flow instrument MFC of the range of flow running of about hundreds of to thousands of sccm.Source material flow controller 530 can control source material
The flow of material.
Carrier gas power supply unit 540 is equipped with the pressure vessel of its internal reservoir carrier gas, and carrier gas supply pipe 550 can connect carrier gas confession
Answer device 540 and source material power supply unit 510.Carrier gas is supplied to source material power supply unit 510 by carrier gas supply pipe 550, therefore can handle
Source material and carrier gas are supplied to source material supply pipe 520.Later, source material is passed through after source material jet port 252 with gaseous state
The lower part in processing hole 220 can be ejected into.On the other hand, carrier gas may include inert gas, at this point, inert gas may include
Argon gas.
On the other hand, source material supply pipe 520 can take heater unit for installation 900, reason as the pyrolysis of source material g
Temperature is about the range that 175 DEG C or so and source material g of pyrolysis temperature is included in the operational temperature of unit heater 900
It is interior, therefore the high temperature of unit heater 900 can be relied on by source if 520 heater unit for installation 900 of source material supply pipe
Materials pyrolysis.
Moreover, the embodiment of the present invention allows substrate S to heat up using at least one of purge gas f and gas curtain gas c, therefore
It does not need to be supplied to substrate S after allowing source material g to be warming up to the temperature higher than gasification temperature range.Therefore, source material g can be prevented
The phenomenon that being pyrolyzed inside source material supply pipe 520 before arriving at chamber unit 200.
Purge gas supply unit 600 may be coupled to the top in processing hole 220.Purge gas supply unit 600 can be with
Including internal receiving purge gas f and it is isolated from the purge gas power supply unit 610 of chamber unit 200, connection purge gas supply
The purge gas supply pipe 620 in device 610 and processing hole 220 and it is mounted on the purge gas flow control of purge gas supply pipe 620
Device 630 processed.Purge gas power supply unit 610 can be the internal pressure vessel for having accommodated purge gas.Purge gas supply pipe 620
Being connected between purge gas power supply unit 610 and chamber unit 200, a part runs through the other side of chamber unit 200 and prolongs
The inside of chamber unit 200 is reached, end may be coupled to purge gas jet port 251.
Purge gas power supply unit 610 may include the preset pressure vessel for storing purge gas f.Purge gas f can be with
Including inert gas.Inert gas may include argon gas.Purge gas supply pipe 620 connects purge gas power supply unit 620 and blows
Sweep gas ejection ports 251, a part of other side that can run through chamber ontology 210 of purge gas supply pipe 620.Flow of purge gas
Amount controller 630 can be from the purge gas power supply unit 620 farther out and relatively of chamber ontology 210.Flow of purge gas amount controller
630 may include the mass flow instrument MFC operated with the range of flow of about hundreds of to thousands of sccm.Purge gas flow control
Device 630 controls the flow of purge gas f, at this point, the flow value of purge gas f can be greater than the flow value of source material g.
Gas curtain gas supply unit 700 is mounted on chamber unit 200, can ejected on one side around processing in chamber unit 200
Formed to the gas curtain gas c in the outside of 220 lower end of hole.Also that is, gas curtain gas supply unit 700 can pass through gas curtain gas blowout loophole 254
Gas curtain gas c is sprayed to the outside of processing space 10.Gas curtain gas supply unit 700 may include: gas curtain gas power supply unit 710, internal
Accommodate gas curtain gas c；Gas curtain gas supply pipe 720, a part run through the other side of chamber ontology 210 and gas curtain gas power supply units 710
It is connect with gas curtain gas blowout loophole 254；And gas curtain air-flow amount controller 730, it is mounted near gas curtain gas power supply unit 710
Gas curtain gas supply pipe 720.Gas curtain gas c may include inert gas.Inert gas may include argon gas.Gas curtain air-flow amount controller
730 can be equipped with the mass flow instrument MFC in the range of flow running of hundreds of to thousands of sccm.The flow of gas curtain gas c can be by
Control is in flow identical with purge gas f or greater than the preset flow of purge gas f flow.Gas curtain gas c can be with ring-shaped
Around the outside of processing space 10.
Exhaust unit 800 is mounted on chamber unit 200, and inlet portion can be located at 220 lower end of processing hole of the one side of chamber unit 200
Outboard peripheries.Exhaust unit 800 can suck gas curtain gas c, source material g and purge gas f and be eliminated from substrate S.
Exhaust unit 800 can suck the various gases on substrate S by first row port 253 and second exhaust port 255
With the objects such as foreign matter.Exhaust unit 800 may include exhaust emissions device 810, exhaust pipe 820 and extraction flow controller 830.Exhaust
Escaper 810 may include emptying pump or vacuum pump.In order to avoid interfering with chamber unit 200, exhaust emissions device 810 can be with
It is isolated from chamber unit 200.A part of exhaust pipe 820 run through chamber ontology 210 the other side, can first row port 253 with
Second exhaust port 255 is connected to exhaust emissions device 810.Extraction flow controller 830 may include with hundreds of to thousands of sccm
The mass flow instrument of range of flow running is to control extraction flow.Foreign matter mistake can be installed in the predeterminated position of exhaust pipe 820
Filter (not shown).
On the other hand, when growing foreign matter has occurred on substrate S laser beam covered by growing foreign matter and can not be in base
Plate S-shaped film forming, need to re-start such as following process, also that is, on substrate S deposition film and wiring breaking part is connect
Continuous wiring (wiring).Moreover, the part of growing foreign matter has occurred can remain gold removing growing foreign matter
The ingredient in category source and the volume that short-circuit (short) or electric leakage (leakage) etc occurs is bad.
Therefore, laser beam is irradiated to before substrate S and needs to allow substrate S to be rapidly heated to can swimmingly deposition film is again
Source material g can be prevented to be gasificated into the temperature of solid state.
Therefore, equipped with unit heater 900 so as to allow purge gas f heat up.Here, purge gas f is chosen to be heating
The reasons why medium is that flow shared by purge gas f is very high in the flow of all gas in processing space 10, and if does not have
Purge gas f can play refrigerant in processing space 10 instead if allowing purge gas f to heat up.Purge gas f
The very high flow for referring to purge gas f of shared flow is opposite to be more than source material g and carrier gas.
Unit heater 900 is mounted on the side of purge gas supply unit 600.Unit heater 900 can purge
Purge gas supply pipe 620 is installed between gas flow controller 630 and chamber unit 200.Especially, unit heater 900
Purge gas supply pipe 620 can be mounted on coaxial manner so as to the mistake that allows purge gas f to flow in purge gas supply pipe 620
Pass through the inside of unit heater 900 in journey.
Illustrate in another way herein, which cuts off the side of purge gas supply pipe 620 and the portion in cutting
Divide and sandwich unit heater 900 and purge gas supply pipe 620 is connected with unit heater 900, unit heater 900 can be pacified
It is attached to the side of purge gas supply pipe 620.Whereby, purge gas f is certain during passing through purge gas supply pipe 620
Unit heater 900 can directly be passed through.
Coaxial manner refers to the mode operated connect in alignmently after, refers to unit heater in embodiment
900 and purge gas supply pipe 620 form the mode integrally installed in a line.Also that is, in the function side of supply purge gas f
Face, unit heater 900 can be used as the partially running of purge gas supply pipe 620.
Purge gas f can be controlled according to purge gas power supply unit 610, purge gas supply pipe 620, purge gas flow
Device 630, purge gas supply pipe 630, unit heater 900 and purge gas supply pipe 630 sequential flowing.Purge gas f
It can be directly heated by 900 ground of unit heater by heater unit 900.Expression is directly heated not supply by purge gas
Pipe 630 but directly proceed with heat exchange between unit heater 900 and purge gas f.
For example, it allows and is supplied by purge gas on 620 ground of purge gas supply pipe that is externally wrapped with of purge gas supply pipe 620
Should the mode of purge gas f heating inside pipe 620 more difficult purge gas f is warming up to required temperature.For example, purge gas exists
By purge gas supply pipe 620 in several seconds or even tens of seconds, therefore in the outside heating and blowing gas of purge gas supply pipe 620
The efficiency of body f is lower.
For example, the outer peripheral surface of purge gas supply pipe 620 install additional external heater and with heater list
900 identical temperature running external heater of member and if measuring the temperature of purge gas f, the temperature measured is logical lower than directly
The temperature of the purge gas f of unit heater 900 is crossed, but also is likely lower than the temperature of source material g.
In addition, it is desirable in the outside of purge gas supply pipe 620 in purge gas f is heated in several seconds or even tens of seconds
If required temperature, it is desirable that the operational temperature of unit heater 900 is very high, this other composition that will lead to precipitation equipment is wanted
Procatarxis high temperature and be damaged.
Unit heater 900 is installed to purge gas supply pipe 620 with coaxial manner by embodiment, therefore the thermal efficiency is excellent
It is different, moreover it is possible to purge gas f be heated to required temperature easily within several seconds or even tens of seconds short time.
On the other hand, the operational temperature of unit heater 900 is tens of to hundreds of DEG C of high temperature, can be isolated with pre-determined distance
It, for example, can be from 630 ground of the flow of purge gas amount controller installation farther out and relatively of chamber unit 200 in chamber unit 200.This
When, the process equipment near chamber unit 200 can be maintained to be laid out as it is.
Unit heater 900 may include being installed to purging near flow of purge gas amount controller 630 with coaxial manner
The outer cylinder 910 of feed tube 620, the inside configured in outer cylinder 910 and inside 950 are supplied with coaxial manner connection purge gas
It the inner cylinder 920 of pipe 620, hot line 930 of the configuration inside inner cylinder 920 and through outer cylinder 910 and inner cylinder 920 and should connect
To the power supply line 940 of hot line 930.
Outer cylinder 910 can also be in housing of the exterior face equipped with masking heat.Inner cylinder 920 plays the effect of such as partition,
It is internally provided with the flow path 950 that purge gas f can be allowed to flow, purge gas supply pipe 620 can be connected to.On the other hand, inner cylinder
920 inner peripheral surface can be formed in the form of bellows.After can receiving such as electric energy heat occurs for hot line 930, can take coil shape
Shape is to advantageously form sinuous flow and heat dissipation.Hot line 930 configures in which can be parallel to the central axis of inner cylinder 920.
Unit heater 900 is at least internal to be included stainless steel material and can be installed with bellows structure.For example, hot line
930 may include stainless steel material, and inner cylinder 920 can be installed with bellows structure.Certainly, outer cylinder 910 and hot line 930 also can wrap
Containing stainless steel material.Therefore, it can prevent from flowing through the pollution of the purge gas f of flow path 950.
Heater control unit 1000 can detecte to be passed from unit heater 900 toward 630 side of flow of purge gas amount controller
The running of unit heater 900 is controlled after the heat passed.Heater control unit 1000 includes: temperature sensor 1100, is being heated
Purge gas supply pipe 620 is installed between device unit 900 and flow of purge gas amount controller 630；Controller 1200 receives temperature
The temperature value that is inputted of degree sensor 1100, temporarily reduced when higher than fiducial temperature unit heater 900 warming temperature or
Unit heater 900 is allowed to suspend.Here, fiducial temperature refers to the temperature that flow of purge gas amount controller 630 can operate.
It can be in the further heater unit for installation 900 in the side of gas curtain gas supply unit 700.For example, unit heater
900 can be mounted on gas curtain gas supply pipe 720 with coaxial manner, and gas curtain gas c can be allowed to heat up.Furthermore, it is possible in gas curtain gas supply pipe
720 and be installed on this unit heater 900 between be further provided with heater control unit 1000.
Illustrate the running of the precipitation equipment of the embodiment of the present invention below with reference to Fig. 5.According to an embodiment of the invention, purge gass
Body f is ejected into the top in processing hole 220 with preset flow, and source material g and carrier gas are ejected into processing hole 220 together with preset flow
Lower part.Purge gas f, source material g and carrier gas are flowed toward processing space 10, at this point, being raised to higher than substrate S and source material
The purge gas f of g temperature is supplied to processing with 60% or more the flow for handling the flow of all gas flowed in hole 220
In space 10, and then substrate S is allowed to be brought rapidly up.The purge gas f, source material g and carrier gas of processing space 10 are supplied to by the
Delivery pipe 820 is inhaled into after one exhaust outlet 253.
At this point it is possible to spray gas curtain gas c to the outside of processing space 10 by gas curtain gas blowout loophole 254.Gas curtain gas c can be with
Ring-shaped surrounds the outside of processing space 10.The temperature of gas curtain gas c is higher than the temperature of substrate S and source material g and is prevented place
The heat loss for managing space 10, additionally aids the heating of substrate S.Gas curtain gas c can pass through first row port 253 and second exhaust port
254 are inhaled into delivery pipe 820.On the other hand, injection flow, injecting time and the spray of purge gas f, source material g and gas curtain gas c
Number of values can be had by penetrating sequence, and the present invention will not be particularly limited to.
If the heating of substrate S has reached required temperature, laser beam can be irradiated to by processing hole 220 by substrate S
And deposition film.
Illustrate the deposition method of the embodiment of the present invention below with reference to Fig. 2 to Fig. 6.At this point, to utilize the embodiment of the present invention
Illustrate embodiment on the basis of preceding deposition device is in substrate S deposition film the technique that defect is repaired.
The deposition method of the embodiment of the present invention is a kind of deposition side of deposition film on the substrate S supported in an atmosphere
Method comprising following process: it is ready for substrate S in an atmosphere；To be isolator configured on the upside of substrate S so as in the upside of substrate S
Purge gas f is supplied in the processing hole 220 for forming the chamber unit 200 of processing space 10；It is sprayed around the outside of processing space 10
Gas curtain gas c；Utilize the temperature of at least some adjusting substrate S in purge gas f and gas curtain gas c；The place of transit chamber unit 200
Reason hole 220 is supplied to source material g the processing space 10 being formed between chamber unit 200 and substrate S；And pass through processing hole 220
Laser beam is irradiated to the one side of substrate S and forms film.
Here, the process of supply purge gas f, the process for spraying gas curtain gas c, the process for supplying source material g and adjusting temperature
The process of degree can carry out together, alternatively, also can successively carry out in any order.
It is ready for substrate S in an atmosphere.Substrate S is placed in supporter 100, configures chamber unit 200 in the upside of substrate S.
At this point, chamber unit 200 can be warming up to depositing temperature or gas higher than source material g by set on internal heating unit (not shown)
Change the preset temperature of temperature.At this point, as long as the temperature of chamber unit 200 can prevent the substrate S by purge gas f heating by chamber
The cooling degree of unit 200.
On the other hand, the warming temperature of chamber unit 200 is likely lower than the prior art.Its reason is purge gas f or purging
Gas f and gas curtain gas c play very big effect in terms of the heating of substrate S, therefore equally improve chamber not necessarily like the prior art
The temperature of unit 200.
For example, in the case where irradiating laser beam to substrate S or observing the situation of rejected region etc of substrate S, can with when
Between loss and the problem that the lens focus on light path gradually obscures can occur, as the embodiment of the present invention equally allows chamber list
If the temperature of member 200 is lower, it can postpone or prevent the problem.
Later, purge gas f is supplied to the top in processing hole 220.Purge gas f is supplied by purge gas supply unit 600
Purge gas jet port 251 should be arrived, later, is ejected into the top in processing hole 220.Purge gas f can prevent source material g from contacting
The lower surface of window 230.Purge gas f can be the window purge gas for purging window 230.It is controlled using purge gas flow
Device 630 adjusts the flow of purge gas f, such as can control into the flow greater than source material g, such as, adjustable purge gass
The flow of body f so as to allow purge gas f flow through processing hole 220 inside all gas flow in account about 60%.
At this point, adjusting the temperature of substrate S using purge gas f.Purge gas f is allowed to adjust by 900 ground of unit heater
The temperature of purge gas f, the unit heater 900 are mounted on the purge gas supply of purge gas f process then with coaxial manner
The purge gas f for having adjusted temperature is supplied to processing hole 220, is allowed in processing space 10 using the heat of purge gas f by pipe 620
Substrate S heating.Also that is, purge gas f can allow the one side of substrate S to heat up in processing space 10.
Make purge gas f direct by feat of the unit heater 900 for being mounted on purge gas supply pipe 620 with coaxial manner
It is warming up to the temperature higher than target temperature, temperature is gradually reduced during by purge gas supply pipe 620, and injection is everywhere
The temperature of purge gas f can become target temperature when managing the inside in hole 220.For this purpose, unit heater 900 can be to be higher than target
Tens of to hundreds of DEG C of temperature of temperature operates.Purge gas f is by being warming up to heating during 900 inside of unit heater
Temperature near the operational temperature range of device unit 900.
Target temperature is temperature when purge gas f arrives at processing space 10, which can be set as described below
Purge gas f temperature, also that is, purge gas f can the several seconds to allow substrate S to be warming up in processing space 10 during tens of seconds can
With the temperature of deposition film well on substrate S.
On the other hand, as an example, if the upper limit of the operational temperature of unit heater 900 is 250 DEG C, unit heater
900 can operate in such as tens of to 250 DEG C of temperature.Certainly, when the upper limit of operational temperature changes, unit heater 900
The upper limit of operational temperature range can also change.
During adjusting the temperature of substrate S one side, also transmitting can be directed in place on the basis of the flowing of purge gas f
It carries out detection and is controlled according to its result to heat in the heat of the flow of purge gas amount controller 630 of 900 upstream of unit heater
The running of device unit 900.
Later, source material g is supplied to processing space 10 in the processing hole 220 of transit chamber unit 200.Also that is, source material g is by source
Material supply unit 500 is supplied to source material jet port 252, later, is ejected into the lower part in processing hole 220.Source material g is gas
State, the flow of source material g are then controlled the flow in hundreds of sccm by source material flow controller 530.Source material supply pipe 520
The preset temperature near gasification temperature that temperature can be controlled or maintain source material g during source material g passes through.Whereby,
The gaseous state of source material g can be well maintained.
The present invention is not particularly limited the temperature control of source material supply pipe 520 or temperature maintains mode.For example, Ke Yili
With the temperature of additional heating unit (not shown) voltage input material supply pipe 520, alternatively, can use the temperature of source material g
Maintain the temperature of source material supply pipe 520.The temperature of source material g, which can be, can allow source material g to be well maintained vaporized state
Temperature range.The temperature range is known as the gasification temperature of source material g.
Processing space 10 is made to be isolated from atmosphere towards the outside of processing space 10 injection gas curtain gas c.At this point, allowing gas curtain gas c
900 ground of unit heater by being mounted on gas curtain gas supply pipe 720 adjusts the temperature of substrate S with improving the temperature of gas curtain gas c.
Also that is, gas curtain gas c is also used for the heating of substrate S.Gas curtain gas c adjusts flow using gas curtain air-flow amount controller 730, adjustable
At identical with the flow of purge gas f or be adjusted to flow greater than purge gas f.
Purge gas f can allow the temperature of substrate S to improve rapidly with gas curtain gas c, therefore even if increase the supply of source material g
Flow can also prevent growing foreign matter from occurring, and whereby, can increase the thickness of deposited film, reduce the resistance of film.Also that is, can mention
The quality of high film.
Later, laser beam is irradiated by one side of the processing space 10 to substrate S and forms film.It whereby, can be with repairing substrate S
Defect.
After the deposition for completing film, terminate the irradiation of laser beam, further sprayed according to preset time purge gas f and
The temperature in the area by reparation of gas curtain gas c control base board S, allows the film of deposition to stabilize.Later, terminate the reparation of disconnection defect
Technique.
Utilize exhaust unit 800 in the outside of processing space 10 and the injection of gas curtain gas c when carrying out aforementioned process
The outside in area sucks reactant, product and the unreacted reactant of generation when carrying out technique and is vented on substrate S.
Fig. 7 is for the result of thin film deposition processes of the precipitation equipment and method for being applicable in the embodiment of the present invention and existing
The photo that technology is shown with being compared.
Using the precipitation equipment (precipitation equipment of comparative example) for the unit heater for removing the embodiment of the present invention with existing
Mode compare the renovation technique of example, using the precipitation equipment of the embodiment of the present invention with the deposition side of the embodiment of the present invention
Method has carried out renovation technique.Source material uses tungsten source, source material temperature, the chamber cell temperature, source material of embodiment and comparative example
Flow, purge gas flow, gas curtain throughput and substrate heating-up time are all identical.Comparative example and embodiment are chamber cell temperature control
Make the range at 60 DEG C to 65 DEG C.Moreover, embodiment periodically changes unit heater in the range of 50 DEG C to 250 DEG C
Film deposition has been repeated to operational temperature.
Growing foreign matter has occurred in the renovation technique of comparative example on substrate.(a) of Fig. 7 is the reparation for comparing example
The photo of its result is shot after technique.It can learn that the preset areas d of (a) of Fig. 7 forms growing foreign matter.
In contrast to this, the renovation technique of embodiment excellently deposited film in substrate growing foreign matter does not occur then.
(b) of Fig. 7 is the result photo of a technique in the renovation technique of embodiment, in more detail, is being carried out repairing for example
The operational temperature of unit heater is set as 150 DEG C in the result for skill of returning to work and purge gas and gas curtain gas all heat up and handle
The temperature of chamber unit for 63 DEG C carries out the result of technique.The figure is please referred to, can learn to repair foring well on the r of position
Film.Certainly, in the renovation technique of only purge gas heating it can also be seen that there is no growing foreign matters.
The embodiment of the invention simply to illustrate that the present invention rather than in order to limit the present invention.Of the invention is described
The revealed constituent element of embodiment and mode can be combined with each other or become miscellaneous form after intersecting, these variations
Also it should be regarded as scope of the invention.Also that is, the present invention can be with each in the range of the technical idea of claims and its equivalence
The form of formula various kinds realizes that those skilled in the art should be recognized that the present invention can be in technical idea of the invention
Miscellaneous embodiment is carried out in range.
Claims (15)
1. a kind of precipitation equipment, which is characterized in that
Include:
Chamber unit is configured in the upside for the supporter that can dispose processed material, is formed in the one side opposite with the supporter
There is processing hole, is equipped with window in the upper end in the processing hole；
Laser cell can install with laser processed material irradiation by the processing hole；
Source material supply unit is connected to the lower part in the processing hole；
Purge gas supply unit is connected to the top in the processing hole；
Gas curtain gas supply unit is mounted on the chamber unit, can be to the outside for the processing space being formed on the downside of the processing hole
Formed to injection gas curtain gas；And
Unit heater, be mounted in the purge gas supply unit and the gas curtain gas supply unit at least some
Side.
2. precipitation equipment according to claim 1, which is characterized in that
The purge gas supply unit includes:
Purge gas power supply unit, inside receiving purge gas, is isolated from the chamber unit；
Purge gas supply pipe connects the purge gas power supply unit and the processing hole；And
Flow controller is mounted on the purge gas supply pipe；
The unit heater is installed on the purge gas supply pipe between the flow controller and the chamber unit.
3. precipitation equipment according to claim 2, which is characterized in that
The unit heater is mounted on the purge gas supply pipe with coaxial manner to allow the purge gas by institute
State the inside of unit heater.
4. precipitation equipment according to claim 3, which is characterized in that
The unit heater includes:
Outer cylinder is mounted on the purge gas supply pipe with coaxial manner；
Inner cylinder, configuration are connected to the purge gas supply pipe in the inside of the outer cylinder, inside with coaxial manner；
Hot line is configured in the inside of the inner cylinder；
Power supply line through the outer cylinder and inner cylinder and is connected to hot line.
5. precipitation equipment according to claim 2, which is characterized in that
Including heater control unit, detects after the unit heater passes to the heat of the flow controller side and control institute
State the running of unit heater.
6. precipitation equipment according to claim 5, which is characterized in that
The heater control unit includes:
Temperature sensor is installed on the purge gas supply pipe between the unit heater and the flow controller；
Temperature controller receives the temperature value that the temperature sensor is inputted, and reduces the heater when higher than fiducial temperature
The warming temperature of unit allows the unit heater to suspend.
7. precipitation equipment according to claim 1, which is characterized in that
The gas curtain gas supply unit includes:
Gas curtain gas power supply unit, inside receiving gas curtain gas；And
Gas curtain gas supply pipe, the gas curtain gas blowout that the one side in the chamber unit is formed around the outside for handling hole lower end
Loophole is connect with the gas curtain gas power supply unit；
The unit heater is mounted on the purge gas supply pipe with coaxial manner to allow described in the gas curtain gas process
The inside of unit heater.
8. precipitation equipment according to claim 7, which is characterized in that
The gas curtain gas supply unit includes the flow controller for being mounted on the gas curtain gas supply pipe,
The unit heater is installed on the gas curtain gas supply pipe between the flow controller and the chamber unit.
9. precipitation equipment according to claim 8, which is characterized in that
Including heater control unit, detects after the unit heater passes to the heat of the flow controller side and control institute
State the running of unit heater.
10. precipitation equipment according to claim 1, which is characterized in that
Including gas vent unit, it is mounted on the chamber unit, inlet location is described in the one side of the chamber unit
Handle the outboard peripheries of hole lower end.
11. a kind of deposition method, this method is to the processed material deposition film supported in atmosphere, which is characterized in that
Including following process:
It is ready for processed material in an atmosphere；
To be isolator configured on the upside of the processed material so that the processing hole for forming processing space in the upside of the processed material supplies
Answer purge gas；
Gas curtain gas is sprayed around the outside of the processing space；
Using in the purge gas and the gas curtain gas at least some adjust the temperature of the processed material；
It is that the processing space supplies source material by the processing hole；
Film is formed to a surface irradiation laser of the processed material by the processing hole.
12. deposition method according to claim 11, which is characterized in that
The process for adjusting the processed material temperature includes following process,
The purge gas is allowed to adjust the temperature of the purge gas by unit heater, the unit heater is with coaxial side
Formula is mounted on the purge gas supply pipe for allowing the purge gas to pass through.
13. deposition method according to claim 12, which is characterized in that
It include following process during adjusting the processed material temperature,
On the basis of the flowing of the purge gas, the purge gas is mounted on for from the upstream of the unit heater is past
The heat of the flow controller transmitting of supply pipe is detected, and the running of unit heater is controlled according to its result.
14. deposition method according to claim 11, which is characterized in that
The process for adjusting the processed material temperature includes following process,
The gas curtain gas is allowed to adjust the temperature of the gas curtain gas by unit heater, which is pacified with coaxial manner
Mounted in the gas curtain gas supply pipe for allowing the gas curtain gas to pass through.
15. deposition method according to claim 11, which is characterized in that
The source material includes tungsten source or cobalt source, and the purge gas includes inert gas.
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| KR10-2018-0042865 | 2018-04-12 | ||
| KR1020180042865A KR102100801B1 (en) | 2018-04-12 | 2018-04-12 | Deposition apparatus and method |
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| KR102100801B1 (en) | 2020-04-14 |
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| CN110373656B (en) | 2021-09-28 |
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