KR101680291B1 - Deposition apparatus and method - Google Patents
Deposition apparatus and method Download PDFInfo
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- KR101680291B1 KR101680291B1 KR1020150139081A KR20150139081A KR101680291B1 KR 101680291 B1 KR101680291 B1 KR 101680291B1 KR 1020150139081 A KR1020150139081 A KR 1020150139081A KR 20150139081 A KR20150139081 A KR 20150139081A KR 101680291 B1 KR101680291 B1 KR 101680291B1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/453—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating passing the reaction gases through burners or torches, e.g. atmospheric pressure CVD
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45559—Diffusion of reactive gas to substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
Abstract
Description
The present invention relates to a deposition apparatus and a deposition method, and more particularly, to a deposition apparatus capable of easily controlling a temperature of a process material when depositing a film on a process material by a chemical vapor deposition method, and a deposition method applied thereto.
Various display devices have electronic circuits formed on a substrate, and the conductive lines of these electronic circuits may cause defects such as disconnection or short-circuit during manufacturing or after manufacture of the circuit. For example, during the process of manufacturing various display devices including an LCD (Liquid Crystal Display), an OLED (Organic Light Emitting Display), or an LED (Light Emitting Display), electrodes or wirings Signal lines and the like may be partially disconnected to cause an open defect.
Therefore, during the process of manufacturing various display devices, a repair process for repairing an open defect is performed. Such a repair process is carried out in the atmosphere, for example, by a chemical vapor deposition type repair apparatus.
On the other hand, in order to repair open defects, a metal source atmosphere is formed in the repair position after the repair position of the substrate is raised to a predetermined temperature, and a film is deposited by irradiating the defect position with a laser.
Conventionally, a stage glass was used to raise the temperature at the repair position of the substrate. For example, an electroconductive film was attached to a stage glass to provide a heating glass, and the whole of the substrate was heated using the heating glass. Thus, there is a difficulty in raising the temperature of the entire substrate in order to repair the local position of the substrate. In addition, since the surface on which the film is deposited is the upper surface of the substrate, since the temperature was elevated through the lower surface of the substrate, it took a long time to raise the temperature and it was difficult to control the temperature accurately.
The present invention provides a deposition apparatus and a deposition method capable of directly raising the temperature of one side of a processed material in contact with a processing space in depositing a film on a processed material in the atmosphere.
The present invention provides a deposition apparatus and a deposition method capable of locally raising the temperature of one surface of a processed material in contact with a processing space in depositing a film on a processed material in the atmosphere.
The present invention provides a deposition apparatus and a deposition method capable of suppressing or preventing formation of impurities in a deposited film in depositing a film on a treatment product in the atmosphere.
A deposition apparatus according to an embodiment of the present invention is an apparatus for depositing a film on a processing object supported in the atmosphere, which is disposed in the atmosphere, in which a processing hole is formed on a surface facing the processing object, A chamber portion for providing a processing space; A source supply line extending to the inside of the chamber portion and having an outlet portion opened at least at one side of the inner circumferential surface of the processing hole; And a temperature-rising gas supply line extending in a direction toward the processing hole from the inside or outside of the chamber portion, the outlet portion facing the processing space.
And a purge gas supply line extending to the inside of the chamber portion and having an outlet portion wound around the outside of the source supply line on one side of the chamber portion.
The purge gas supply line may further include an exhaust line formed to extend into the chamber and having an inlet portion surrounding at least one of an inner side and an outer side of the purge gas supply line on one side of the chamber portion.
A laser part formed to be capable of irradiating laser to the processing space; A source supply connected to the source supply line; A temperature elevation gas supply unit connected to the temperature elevation gas supply line; And a temperature control unit for controlling the temperature of the temperature-elevating gas supplied to the temperature-raising-gas supply unit corresponding to the deposition temperature of the source supplied from the source supply unit.
A purge gas supply unit connected to the purge gas supply line; A first exhaust unit connected to a first exhaust line that surrounds at least a part of the processing hole inside the purge gas supply line of the exhaust line; And a second exhaust unit connected to a second exhaust line that surrounds and surrounds the outside of the purge gas supply line among the exhaust lines.
Wherein the processing hole is opened from one side of the chamber portion to the lower side and connected to the upper portion of the processing space, the heating gas supply line is formed inside the chamber portion, and at least the outlet portion is inclined downward in the direction toward the center portion of the processing space .
At least an outlet portion of the temperature-rising gas supply line is opened at one side of the chamber portion so as to pass through the inside of the processing hole obliquely and abut the edge portion of the processing space, and can be partially overlapped with the processing hole.
A deposition method according to an embodiment of the present invention is a method of depositing a film on a processed article supported in the air, comprising: preparing a processed article in the air; Controlling the temperature by injecting a heating gas into the processing space of the processed product; Spraying a source into the processing space of the processed material; And a step of forming a film by irradiating a laser on one side of the processed product.
And separating the processing space from the outside air by injecting a purge gas into the processing material so as to surround the outside of the processing space.
And discharging at least one of reactant, product, and unreacted material from at least one of the interior and the exterior of the processing space.
The step of controlling the temperature may include the step of injecting the temperature-rising gas obliquely toward the processed material inside the processing space.
The controlling of the temperature may include injecting the temperature-rising gas in a downward slope in a direction from one side of the edge of the processing space toward the center.
Controlling the temperature includes the steps of discharging the temperature-rising gas from at least the other side of the edge of the processing space and inducing a flow of the temperature-rising gas passing through the center of the processing space; And injecting a purge gas into the processed product so as to surround the outside of the process space to isolate the flow of the heated gas from the outside air.
The process of forming the film may include a process of repairing defects by forming a film on the open defect of the processed product.
The process of forming the film may further include the step of controlling the temperature of the repaired area of the processed product by injecting a heated gas into the processed space of the processed product.
The temperature-elevated gas may be raised to a temperature range corresponding to the deposition temperature of the source and injected into the processing space of the processed material.
The temperature elevating gas may be heated to a temperature ranging from 25 ° C to 50 ° C and injected into the processing space of the treated product.
The source may include a metal source, and the metal source may include a cobalt source. The temperature elevating gas may include air.
According to the embodiment of the present invention, when depositing a film on a treatment product in the air, one side of the treatment product in contact with the treatment space can be directly heated. In addition, it is possible to locally raise the temperature of one side of the processed product in contact with the processing space. From this, it is possible to control the temperature of one side of the processed product to a temperature range in which the film is cleanly deposited, thereby preventing or preventing formation of impurities in the deposited film.
For example, in the case of repairing open defects formed on one surface of a substrate during or after manufacture of various display devices by a chemical vapor deposition method, a temperature-rising gas is sprayed into a processing space in contact with the repair area of the substrate on which defects are located, The temperature can be raised to the temperature range corresponding to the deposition temperature. Then, the metal source is sprayed to the process space, and a laser beam is irradiated to the repair area to form a clean film having no impurities at the defect position. That is, the temperature of the processing space is controlled to a desired temperature by first injecting the temperature-rising gas into the processing space, and then the metal source is sprayed to deposit a film on the processed material to form a clean film.
In this case, the structure of the support portion can be remarkably simplified, and the manufacturing cost of the apparatus can be reduced, compared with the conventional method of indirectly raising the repair region of the substrate by applying heat to the other surface of the substrate in contact with the support portion using the support portion. In addition, the energy consumed in the process of directly heating the substrate with the temperature-elevating gas is lower than the energy consumed in indirectly raising the substrate with the support, so that the energy efficiency of the entire process can be significantly improved.
In addition, while a series of processes in which the processing space is heated and the defect position is repaired, the processing space can be surrounded by the purge gas outside the processing space to isolate the processing space from the outside air. In particular, it is possible to isolate the flow of the heating gas from the outside air in the process of raising the temperature of the repair region, thereby effectively controlling the temperature of the repair region.
Further, during the injection of the temperature-rising gas into the processing space, the flow of the temperature-rising gas can be induced to the other side of the edge portion of the processing space via the central portion of the processing space at one side of the edge portion of the processing space. From this, it is possible to control the defective position of the repair region contacting the central portion of the processing space to a clean state by using the flow of the temperature-rising gas before forming the film at the defect position, and to remove the foreign matter remaining at the defect position of the repair region from the processing space It can be exhausted.
1 is a view for explaining a deposition apparatus according to an embodiment of the present invention;
2 is a view for explaining a chamber part according to an embodiment of the present invention;
3 is a view for explaining one side of a chamber part according to an embodiment of the present invention.
4 is a view for explaining the inside of a chamber part according to an embodiment of the present invention.
5 and 6 are views for explaining a deposition method according to an embodiment of the present invention.
FIG. 7 is a photograph illustrating a repair result of a repair process to which a deposition apparatus and a deposition method according to an embodiment of the present invention are applied, in comparison with the conventional method. FIG.
Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described below, but may be embodied in various forms. It is to be understood that both the foregoing general description and the following detailed description of the present invention are exemplary and explanatory and are intended to provide further explanation of the invention as claimed. BRIEF DESCRIPTION OF THE DRAWINGS The drawings may be exaggerated or enlarged to illustrate embodiments of the invention, wherein like reference numerals refer to like elements throughout.
FIG. 1 is a block diagram showing a deposition apparatus according to an embodiment of the present invention, and FIG. 2 is a schematic diagram showing a chamber section of a deposition apparatus according to an embodiment of the present invention. FIG. 3 is a schematic view showing one side of a chamber according to an embodiment of the present invention. FIG. 4 is a cross-sectional view of a part of a chamber according to an embodiment of the present invention, 2 is a schematic view showing a cross-sectional structure of a portion AA 'of FIG.
In the drawings, the connection relationship between the components is partially exaggerated to show the connection relationship between the components, with the focus being on the portion of the overall structure of the device, which is described in the corresponding drawings. Some of which are omitted.
Hereinafter, a deposition apparatus according to an embodiment of the present invention will be described in detail with reference to FIGS. 1 to 4. FIG.
The deposition apparatus according to the embodiment of the present invention may include, for example, a chemical vapor deposition (CVD) repair apparatus for depositing a film on a treatment object S provided in the atmosphere. The deposition apparatus includes a
The processed material S may be a substrate on which various electronic devices are formed on one surface, or may be a substrate on which processes for manufacturing the electronic devices are in progress or the process is completed. For example, the processed material S may be a glass substrate on which a gate line, a data line, a pixel, and a thin film transistor are formed on one surface.
The supporting
The
A mounting portion (not shown) may be installed on the upper surface of the table so as to be movable in at least one of x-axis direction, y-axis direction, and z-axis direction. Alternatively, a mounting portion may be provided on the upper surface of the table to fix the position.
For example, when the
The mounting portion serves to movably support the
On the other hand, in the embodiment of the present invention, there is no need to limit the configuration and the manner of the table, the alignment unit, the lift pin, the vacuum chuck, and the mounting unit to a specific configuration and method. In order to avoid obscuring the gist of the present invention, detailed description of these constituent parts is omitted in the embodiment of the present invention.
The
The
The
The lower surface of the
A heating member (not shown) may be provided inside the
The
A
A plurality of source emitting surfaces may be formed on one surface of the
A temperature rising
Temperature gas supply holes 254 may be formed on the other surface of the
At least one
The
At least one
The
A
The
The source supply unit 310 is connected to the
The metal source supplied from the source supply unit 310 to the inside of the
The temperature elevating
On the other hand, in the embodiment of the present invention, the gap between the processing object S and the
The temperature-elevating
The temperature-rising
The
The deposition apparatus according to the embodiment of the present invention may be configured to perform deposition using the temperature elevation
The laser unit 610 is spaced upward from the
The
The deposition apparatus according to an embodiment of the present invention may include a plurality of purge
The first purge
The first purge
The second purge
The purge
In addition, the deposition apparatus according to an embodiment of the present invention may include at least one exhaust line and at least one exhaust unit in addition to the above-described components. Correspondingly, for example, a
The plurality of exhaust lines may include a
The
The
The end of the
The exhaust part such as the exhaust pump or the vacuum pump may include a
5 and 6 are process diagrams for explaining a deposition method according to an embodiment of the present invention, and FIG. 7 is a flowchart illustrating a repair result of a repair process using a deposition apparatus and a deposition method according to an embodiment of the present invention, The results are respectively photographed and compared.
4 to 7, a deposition method according to an embodiment of the present invention will be described in detail.
According to an embodiment of the present invention, there is provided a deposition method for depositing a film on a processing object supported in the air, comprising the steps of: preparing a processing object in the atmosphere; controlling a temperature by injecting a heating gas into a processing object processing space; A step of spraying a source into a processing space of the object to be treated, and a step of forming a film by irradiating a laser on one surface of the object to be processed. The method may further include, after the step of spraying the source, injecting a purge gas into the processing object so as to surround the outside of the processing space to isolate the processing space from the outside air. The method may further include the step of discharging at least one of reactants, products and unreacted materials from at least one of the interior and the exterior of the processing space after the film formation process.
At this time, the process of injecting the source, the process of isolating the process space from the outside air, the process of forming the film, and the process of exhausting may be performed simultaneously or together, or may be sequentially performed in an arbitrary order . That is, the order of these processes is not particularly limited.
In addition, the process of isolating the processing space from the outside air and the process of exhausting at least one of the inside and the outside of the processing space during the above-described processes may be performed before the process of controlling the temperature by injecting the temperature-rising gas into the processing space , And controlling the temperature by injecting a temperature-rising gas into the processing space. That is, the process of isolating the process space from the outside air and the process of exhausting at least one of the inside and the outside of the process space are not particularly limited to the processes in the order.
In the following, a process of preparing a process material in the air, a process of controlling the temperature by injecting a temperature-elevated gas into the process space of the process material, a process of spraying a source into the process space of the process material, A step of injecting a purge gas into the water to isolate the processing space from the outside air; a step of forming a film by irradiating a laser on one side of the processing object; and a step of forming at least one of reactant, The method of the present invention will be described in detail with reference to the deposition method in which the process of discharging the molten metal is sequentially performed.
First, a treated material is prepared in the air. The processed material S may be a substrate, and may be provided in the atmosphere and be supported by the supporting portion.
Thereafter, the temperature is controlled by injecting the temperature-rising gas (g a ) into the processing space (10) above the treated product (S). The process of controlling the temperature may include a step of injecting the temperature-elevated gas g a at an angle to the treated material S inside the process space. More specifically, A step of injecting a temperature-rising gas inclined downward in a direction toward the
As a result, it is possible to increase the temperature of the defective position of the treated material S by using the temperature-rising gas, and to prevent impurities from being generated in the film deposition process. Further, So that the foreign matter remaining in the defect position can be exhausted and removed. At this time, the flow of the temperature-elevated gas can be easily changed and applied to various flows satisfying the passing through the
At this time, the temperature-elevating gas may include air, and the temperature-elevating gas may be raised to a temperature range corresponding to the deposition temperature or the vaporization temperature of the source and may be injected into the
For example, the temperature of the
On the other hand, an inert gas may be used as the temperature rising gas.
Thereafter, when the process of controlling the temperature by injecting the temperature-elevated gas into the
In the above description, the method of completely stopping the injection of the temperature-elevated gas during the injection of the source into the processing space has been exemplified, but this can be variously changed. For example, when the temperature control process is completed, the process of injecting the source is performed, and the injection of the temperature-elevated gas can be maintained at this time. Here, the injection amount of the temperature-elevated gas can be constantly or gradually decreased based on the injection amount in the temperature control process, or can be kept constant at a reduced injection amount.
Thereafter, purge gas (f) is injected into the processing material so as to surround the outside of the
Thereafter, a laser beam is irradiated to one surface of the processed material to form a film. It is possible to deposit the film by irradiating the laser to the defective position, for example, the open defect in a state where the inside of the
Thereafter, at least one of the reactant, the product and the unreacted material is exhausted from at least one of the interior and the exterior of the processing space. Products and unreacted materials generated during the reaction can be discharged at a position around the inner edge of the processing space, and the purge gas used for forming the air curtain outside the air curtain can be exhausted.
Meanwhile, the process of forming the film may further include the step of controlling the temperature of the repaired area of the treated product by injecting the heated gas into the treated
7 (b). The results of the repair process using the conventional repair method are shown in FIG. 7 (b). FIG. 7 shows the result of the repair process using the conventional repair method. a). In the embodiment of the present invention, since the repair position of the substrate, that is, the defect position can be directly raised, the temperature can be easily controlled and the defect position is controlled to a temperature favorable for deposition. , The film can be formed cleanly.
On the other hand, in the conventional method, since the defective position of the substrate is indirectly heated by using the stage glass at the lower part of the substrate, it is difficult to control the temperature of the substrate, so that the defective position of the substrate and the temperature around the substrate are uneven, For example, lower or higher than the vaporization temperature of the cobalt source. As described above, the temperature of the defective position of the substrate is irregular, and impurities are formed in the film, and a part of the film is overgrown. As a result, the film is non-uniformly deposited according to the deposition result (see FIG.
As described above, the repair process of the open defect to which the deposition apparatus and the deposition method according to the embodiment of the present invention are applied can confirm that the film is cleanly formed on the processed product, for example, the substrate, unlike the conventional case.
It should be noted that the above-described embodiments of the present invention are for the purpose of illustrating the present invention and not for the purpose of limitation of the present invention. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. It will be possible.
S: treated water 10: treated space
100: Support part 200:
230: processing hole 311: source supply line
411: temperature elevation gas supply line 700: temperature control unit
Claims (19)
A chamber part disposed in the atmosphere, wherein a processing hole is formed on a surface facing the processing object, and a processing space is provided between the processing object and the processing object;
A source supply line extending to the inside of the chamber portion and having an outlet portion opened at least at one side of the inner circumferential surface of the processing hole; And
Wherein the processing hole is formed to extend in a direction toward the processing hole from the inside of the chamber portion, and an outlet portion penetrates the processing hole obliquely in a direction toward a central portion of the processing space to contact one edge of the processing space, And a temperature elevation gas supply line which is opened at one surface of the chamber part so as to overlap the deposition chamber.
And a purge gas supply line extending to the inside of the chamber portion and having an outlet portion wound around the outside of the source supply line on one surface of the chamber portion.
And an exhaust line formed to extend into the interior of the chamber part, wherein an inlet part surrounds at least one of an inner side and an outer side of the purge gas supply line on one side of the chamber part.
A laser part formed to be capable of irradiating laser to the processing space;
A source supply connected to the source supply line;
A temperature elevation gas supply unit connected to the temperature elevation gas supply line; And
And a temperature control unit for controlling the temperature of the temperature-elevating gas supplied to the temperature-elevating gas supply unit corresponding to the deposition temperature of the source supplied from the source supply unit.
A purge gas supply unit connected to the purge gas supply line;
A first exhaust unit connected to a first exhaust line that surrounds at least a part of the processing hole inside the purge gas supply line of the exhaust line;
And a second exhaust unit connected to a second exhaust line which surrounds and surrounds the outside of the purge gas supply line of the exhaust line.
Wherein the processing hole is opened from one side of the chamber part to the bottom side and connected to the upper part of the processing space.
A process of preparing a treatment product in the air;
Controlling the temperature by injecting a heating gas into the processing space of the processed product;
Spraying a source into the processing space of the processed material; And
And irradiating a laser on one side of the processed product to form a film,
The process of controlling the temperature includes:
Injecting the temperature-rising gas in a downward slope in a direction toward a central portion of the processing space from one edge of the processing space to induce a flow of the temperature-rising gas passing through a central portion of the processing space; And
And passing the flow of the temperature-rising gas through a processing-material defective position in the center of the processing space to remove residual foreign matter.
Further comprising the step of injecting a purge gas into the processing object so as to surround the outside of the processing space to isolate the processing space from the outside air.
And discharging at least one of reactants, products and unreacted materials from at least one of the interior and the exterior of the processing space.
The process of controlling the temperature includes:
Discharging the temperature-rising gas from at least the other side of the edge of the processing space and inducing a flow of the temperature-rising gas passing through the center of the processing space; And
Further comprising the step of injecting a purge gas into the processing object so as to surround the outside of the processing space to isolate the flow of the heating gas from the outside air.
The process of forming the film comprises:
And forming a film on the open defect of the processed product to repair defects.
The process of forming the film comprises:
Spraying a heated gas into the processing space of the processing object to control the temperature of the repaired area of the processing object.
Wherein the temperature elevation gas is heated to a temperature range corresponding to the deposition temperature of the source and is injected into the processing space of the processed material.
Wherein the temperature elevating gas is heated to a temperature ranging from 25 캜 to 50 캜 and is injected into a processing space of the processed material.
Wherein the source comprises a metal source.
Wherein the temperature elevating gas comprises air.
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KR102180979B1 (en) | 2019-08-19 | 2020-11-19 | 참엔지니어링(주) | Processing apparatus and method |
KR102181456B1 (en) | 2019-08-16 | 2020-11-23 | 참엔지니어링(주) | Inspecting apparatus, repairing apparatus and particle beam apparatus |
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KR102100801B1 (en) * | 2018-04-12 | 2020-04-14 | 참엔지니어링(주) | Deposition apparatus and method |
CN113381286B (en) * | 2021-06-02 | 2023-03-03 | 山东大学 | Method for preparing crystal film by ion beam reinforced corrosion |
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