KR102181456B1 - Inspecting apparatus, repairing apparatus and particle beam apparatus - Google Patents

Abstract

The present invention suggests an inspection device including a column unit arranged in the atmosphere and controlled by vacuum, an opening unit formed in the column unit, a particle beam emission unit installed in the column unit, and a detection unit installed between the particle beam emission unit and an object to be treated, and a repair device including a column unit arranged in the atmosphere and controlled by vacuum, an opening unit formed in the column unit, a particle beam emission unit installed in the column unit, and a gas supply unit capable of injecting a source gas. The inspection device can inspect an object to be treated in the atmosphere using a particle beam, and the repair device can repair the object to be treated in the atmosphere using the particle beam.

Description

Inspection device, repair device, and particle beam device {INSPECTING APPARATUS, REPAIRING APPARATUS AND PARTICLE BEAM APPARATUS}

The present invention relates to an inspection apparatus, a repair apparatus, and a particle beam apparatus, and more particularly, to an inspection apparatus, a repair apparatus, and a particle beam apparatus capable of inspecting and repairing an object to be treated in the atmosphere.

During manufacture of the display device, various defects may occur on the substrate. Accordingly, during manufacture of the display device, a process of inspecting a defect and a process of repairing a found defect can be performed.

A scanning electron microscope and a focused particle beam device are used for image generation, component analysis and cutting of thin films formed on a substrate. A scanning electron microscope and a focused particle beam device can generate an image of a thin film formed on a substrate by scanning a particle beam onto a thin film on a substrate carried into a vacuum chamber and collecting various particles and X-rays emitted from the substrate. Can be analyzed. In addition, the focused particle beam device can cut the thin film by scanning the particle beam on the thin film on the substrate.

The chemical vapor deposition repair apparatus is used in a process of repairing defects formed on a substrate. The chemical vapor deposition repair apparatus supplies a metal source to a defect location of a substrate and irradiates a laser to deposit a thin film, thereby connecting disconnected portions of a conductive line.

Conventionally, the inspection process and the repair process were performed in a vacuum chamber using different devices, and thus, there is a problem in that the productivity of the process is lowered.

The technology that serves as the background of the present invention is published in the following patent documents.

KR 10-2016-0134235 A KR 10-1680291 B1

The present invention provides an inspection apparatus capable of inspecting an object to be treated prepared in the atmosphere using a particle beam.

The present invention provides a repair apparatus capable of repairing an object to be treated prepared in the atmosphere using a particle beam.

The present invention provides a particle beam apparatus capable of inspecting and repairing an object to be treated provided in the atmosphere using a particle beam.

An inspection apparatus according to an embodiment of the present invention is an inspection apparatus capable of inspecting an object to be processed in the atmosphere by using a particle beam, and is disposed to face a support provided in the atmosphere so that the object to be processed can be seated, and the inside is A column part that can be controlled by vacuum; An opening formed in a portion facing the object to be processed in the column portion to pass the particle beam; Particle beam emission part installed inside the column part; And a detection unit installed between the particle beam emitting unit and the object to be processed so as to detect a signal by the particle beam.

The column portion is disposed on the upper side of the support portion, the opening portion is formed to pass through the lower portion of the column portion, and the opening has a size of 10 micrometers or more and less than 1000 micrometers, and may surround a traveling path of the particle beam.

The particle beam emitter may emit one of a charged particle beam and a neutral particle beam to one surface of the object to be processed through the opening.

The particle beam emission unit may include at least one charged particle beam source capable of emitting a charged particle beam to one surface of the object to be processed through the opening; It may include at least one neutral particle beam source capable of emitting a neutral particle beam to one surface of the object to be processed through the opening.

A gas supply unit having a function of injecting an atmospheric gas for inspection of an object to be processed, wherein at least a portion of the gas supply unit extends toward the support unit, and an injection hole may be formed at an end thereof.

The gas supply unit may include a gas supply pipe having the injection hole formed at an end thereof; A gas supply source connected to the gas supply pipe and storing atmospheric gas therein, wherein the injection hole may extend downwardly inclined from a circumference of the opening toward a center of the opening.

And a protrusion formed on a lower surface of the column part so as to be positioned between the injection hole and the opening.

A repair apparatus according to an embodiment of the present invention is a repair apparatus capable of repairing an object to be processed in the atmosphere by using a particle beam, and is arranged to face a support provided in the atmosphere so that the object to be processed can be seated, and the inside is A column part that can be controlled by vacuum; An opening formed in a portion facing the object to be processed in the column portion to pass the particle beam; Particle beam emission part installed inside the column part; And a gas supply unit having a function of injecting a source gas.

The column portion is disposed on the upper side of the support portion, the opening portion is formed to pass through the lower portion of the column portion, and the opening has a size of 10 micrometers or more and less than 1000 micrometers, and may surround a traveling path of the particle beam.

The particle beam emitter may emit one of an ion beam and a neutral particle beam to one surface of the object to be processed through the opening.

The particle beam emitter may include at least one ion beam source capable of emitting an ion beam to one surface of the object to be processed through the opening; It may include at least one neutral particle beam source capable of emitting a neutral particle beam to one surface of the object to be processed through the opening.

A control unit for controlling operations of the particle beam emission unit and the gas supply unit to cut the object to be processed or form a structure on the object according to the type of defect of the object to be processed; And a second gas supply unit connected to the gas supply unit to inject an inert gas under the opening through the gas supply unit.

At least a portion of the gas supply part may extend toward the support part, and an injection hole may be formed at an end.

The gas supply unit may include a gas supply pipe having the injection hole formed at an end thereof; A gas supply source connected to the gas supply pipe and storing a source gas therein, wherein the injection hole may extend downwardly inclined from a circumference of the opening toward a center of the opening.

A suction unit capable of suctioning and removing at least one of a reactant, a product, and an unreacted product on the object, wherein the suction unit has a suction port formed at an end thereof, the suction port is located around the opening, and the suction port And the injection hole may be spaced apart from both sides of the opening.

A particle beam device according to an embodiment of the present invention is a particle beam device capable of inspecting and repairing an object to be treated in the atmosphere using a particle beam, and is arranged to face a support provided in the atmosphere so that the object to be treated can be seated. And a column part in which the interior can be controlled by vacuum; An opening formed in a portion facing the object to be processed in the column portion to pass the particle beam; Particle beam emission part installed inside the column part; A detection unit installed between the particle beam emitting unit and the object to be processed so as to detect a signal by the particle beam; And a gas supply unit having a function of injecting a source gas.

The column portion is disposed on the upper side of the support portion, the opening portion is formed to pass through the lower portion of the column portion, and the opening has a size of 10 micrometers or more and less than 1000 micrometers, and may surround a traveling path of the particle beam.

The particle beam emitter may emit at least one of an ion beam, an electron beam, an atomic beam, and a neutron beam to one surface of the object through the opening.

The gas supply part has an injection hole formed at its end.

And a control unit for controlling the operation of the particle beam emission unit and the gas supply unit according to whether the object is inspected and the type of defect of the object.

According to an embodiment of the present invention, an object to be processed is prepared in the atmosphere facing the column portion in which a vacuum is formed therein, and image and component information of the object to be processed is obtained using a particle beam emitted through an opening formed in the column portion. And, you can check the presence or absence of defects and the types of defects. In addition, according to an embodiment of the present invention, the object to be processed may be cut or a structure may be formed on the object according to the type of defect of the object by using the particle beam emitted through the opening of the column part.

In this way, by using the particle beam in the air, the object to be treated can be inspected and the object to be treated can be repaired, so that a substrate made of a material that is difficult to inspect and repair in a vacuum atmosphere, such as a substrate made of a flexible material, can be easily inspected. Can be repaired.

1 is a schematic diagram of an inspection apparatus, a repair apparatus, and a particle beam apparatus according to embodiments of the present invention.
2 is a schematic diagram of an inspection apparatus, a repair apparatus, and a particle beam apparatus according to a first modified example of the embodiments of the present invention.
3 is a schematic diagram of an inspection apparatus, a repair apparatus, and a particle beam apparatus according to a second modified example of the embodiments of the present invention.
4 is a schematic diagram of an inspection apparatus, a repair apparatus, and a particle beam apparatus according to a third modified example of the embodiments of the present invention.
5 is a schematic diagram of an inspection apparatus, a repair apparatus, and a particle beam apparatus according to a fourth modified example of the embodiments of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, and will be implemented in various different forms. Only the embodiments of the present invention are provided to complete the disclosure of the present invention and to completely inform the scope of the invention to those of ordinary skill in the relevant field. In order to describe the embodiments of the present invention, the drawings may be exaggerated, and the same reference numerals in the drawings refer to the same elements.

The inspection apparatus, the repair apparatus, and the particle beam apparatus according to embodiments of the present invention may be an atmospheric pressure treatment apparatus using a particle beam. In this case, the particle beam may include a charged particle beam and a neutral particle beam. For example, the charged particle beam may include a positive ion beam, an negative ion beam and an electron beam. The positive ion beam and the negative ion beam are collectively referred to as an ion beam. Neutral particle beams may include atomic beams and neutron beams. Meanwhile, the particle beam may be simply referred to as a beam.

1 is a schematic diagram of an inspection apparatus, a repair apparatus, and a particle beam apparatus according to embodiments of the present invention.

Below. With reference to FIG. 1, a detailed description will be given of an inspection apparatus according to a first embodiment of the present invention. The inspection apparatus according to the first embodiment of the present invention is an inspection apparatus for inspecting an object to be processed in the atmosphere using a particle beam, and is arranged to face the support part 100 provided in the atmosphere so that the object to be processed can be seated. , The inside of the column part 200 that can be controlled by vacuum, the opening 300 formed in the part facing the object to be treated in the column part 200 to pass the particle beam, the inside of the column part 200 It includes a particle beam emission unit 400 installed, and a detection unit 600 installed between the particle beam emission unit 400 and the object to be processed so as to detect a signal by the particle beam.

In addition, the inspection apparatus is connected to the vacuum forming unit 500 connected to the column unit 200 and the detection unit 600, and an inspection unit capable of inspecting the presence or absence of defects and the type of defects of the object to be processed using signals (not shown. ), and a control unit (not shown) that controls the entire operation of the above-described components of the test apparatus.

In addition, the inspection apparatus may include a gas supply unit 700 having a function of injecting an atmospheric gas g for inspection of an object to be processed.

The object to be processed may be a substrate S. In this case, the substrate S may include wafers and glass panels used for manufacturing various electronic devices in a process of manufacturing various display devices including LCD, OLED, and LED, solar cells, and semiconductor chips. Meanwhile, the object to be processed may be various in addition to the above-described substrate S. The substrate S is provided in the air and may be seated on the upper surface of the support part 100.

When the particle beam is incident on the substrate S, secondary particles and X-rays may be emitted from the substrate S. Here, the secondary particles may be at least one of secondary ions, backscattered electrons, and secondary electrons. Secondary particles and X-rays can be collectively referred to as signals. The signal emitted from the substrate S may be detected by the detection unit 600.

The support part 100 may be formed in a plate type. For example, the support part 100 may be a stage. The support part 100 may be provided in the atmosphere, may be located under the column part 200, and may support the substrate S in an atmospheric pressure atmosphere. The support part 100 may have a predetermined shape and size capable of supporting the substrate S. The configuration of the support portion 100 may be various.

The support part 100 may be installed on a table (not shown). The support part 100 may be installed such that its position is fixed or may be movable in at least one of a plurality of directions intersecting each other by a driving shaft (not shown). The plurality of directions may include an up-down direction, a left-right direction, and a front-rear direction. The left-right direction and the front-rear direction may be a direction parallel to the upper surface of the support part 100, and the vertical direction may be a direction intersecting the upper surface of the support part 100.

The support part 100 may be connected to a bias power supply (not shown), through which a bias voltage may be applied to the support part 100. The secondary particles emitted from the substrate S may move in a direction from the substrate S toward the column part 200 due to a repulsive force by the bias power.

The column part 200 may be disposed above the support part 100. The column part 200 may be spaced apart from the substrate S to be mounted on the upper surface of the support part 100 by a height of several tens of micrometers to several hundreds of micrometers. For example, the separation height may be 100 micrometers. Of course, the height of separation can vary.

The column part 200 may face the support part 100 in the vertical direction. The column part 200 may be able to move relative to the support part 100. To this end, the column part 200 may be installed to be movable in at least one direction. For example, at least one shaft member (not shown) may be movably installed on the table, and the column part 200 may be supported thereto. Of course, the position of the column part 200 is fixed, and the support part 100 may be movable.

The column part 200 may extend in the vertical direction and may have a cylindrical shape. Of course, the shape may be various, such as a square cylinder shape. The column part 200 may be a kind of vacuum container. The column part 200 may include an upper wall, a lower wall, and a side wall. In this case, the upper wall, the lower wall and the side wall may be collectively referred to as a wall. The column part 200 may have an inner space defined by a wall. The upper wall and the lower wall are spaced apart from each other in the vertical direction and may extend in the left and right directions and the front and rear directions, respectively. The sidewall may extend in a vertical direction so as to connect edge ends of the upper and lower walls to each other. The lower wall may extend obliquely downward from the edge end toward the center. That is, the center of the lower wall may be convex downward. Of course, the structure of the column part 200 may be various.

In the column unit 200, the internal space thereof may be controlled by vacuum to generate, focus, and accelerate the particle beam. That is, the column part 200 may have a vacuum chamber formed therein. To this end, the column part 200 may be connected to the vacuum forming part 500. The vacuum chamber can be controlled with low vacuum. The low vacuum may be, for example, 10 ^-3 torr to 10 ^-4 torr. In addition, the vacuum chamber can be controlled with high vacuum. The high vacuum may be, for example, 10 ^-6 torr to 10 ^-9 torr. Of course, the degree of vacuum in the vacuum chamber may vary.

The opening 300 may be formed under the column part 200. That is, the opening 300 may be formed to penetrate a predetermined position of the center of the lower wall of the column part 200 in the vertical direction. The opening 300 may surround the traveling path of the particle beam. The opening 300 may have a size of 10 micrometers or more and less than 1000 micrometers, for example. Preferably, the opening 300 may have a size of 10 micrometers to 100 micrometers. At this time, when the size of the opening 300 is larger than the above-described numerical range, it is difficult to maintain the vacuum chamber, and when the size of the opening 300 is smaller than the above-described numerical range, it is difficult to pass the particle beam and the resulting signal to a desired degree. . Here, the size means the width or diameter in any one of the left and right directions and the front and rear directions. The cross-sectional shape of the opening 300 may be circular. Of course, the shape may vary, such as a square.

When the particle beam passes through the opening 300, since there is nothing physically obstructed except for the atmosphere, scattering and loss of the particle beam can be minimized or prevented. In addition, even when the signal emitted from the substrate S passes through the opening 300, since nothing is disturbed except for the atmosphere, its scattering and loss can be minimized or prevented.

The particle beam emitter 400 may emit any one of a charged particle beam and a neutral particle beam to one surface of the substrate S through the opening 300. The particle beam emission part 400 may be located above the column part 200 and may be disposed toward the opening part 300.

The particle beam emitter 400 is disposed between a particle beam source 410 capable of emitting a particle beam at a predetermined acceleration voltage and a probe current, and between the particle beam source 410 and the opening 300, and includes an electric field and A plurality of electron lenses 420 capable of focusing and accelerating the particle beam emitted from the particle beam source 410 by using at least one of the magnetic fields and guiding the particle beam to the opening 300 may be included.

For example, the particle beam source 410 may include any one of an ion beam source, an electron beam source, an atomic beam source, and a neutron beam source. The electronic lens 420 may be provided in a configuration and method suitable for the type of source. Of course, the types and configurations of the particle beam source 410 and the electron lens 420 may vary.

The vacuum forming part 500 may be connected to, for example, the upper part of the column part 200. The vacuum forming unit 500 may include a vacuum pump 510 and a vacuum pipe 520. The vacuum pump 510 may form a vacuum inside the column part 200 and maintain the formed vacuum. The vacuum pipe 520 may connect the vacuum pump 510 to the column unit 200.

The vacuum pump 510 can make the suction flow rate larger than the flow rate of air flowing into the column unit 200 through the opening 300 until the inside of the column unit 200 is reduced to a desired size of vacuum. have. Thereafter, the vacuum pump 510 may adjust the suction flow rate to maintain the size of the vacuum formed inside the column unit 200 to a desired size. For example, the flow rate of the vacuum pump 510 can be lowered according to the flow rate of air flowing into the column part 200 through the opening 300, and the vacuum atmosphere inside the column part 200 is maintained in an equilibrium state. I can make it. At this time, the equilibrium state is such that the flow rate of air flowing into the column unit 200 through the opening 300 and the flow rate of air exhausted from the column unit 200 to the vacuum pump 510 through the vacuum pipe 520 are the same. It means a state of being controlled.

The detection unit 600 may be located between the particle beam emission unit 400 and the substrate S. The detection unit 600 may collect at least one signal of secondary particles and X-rays emitted from one surface of the substrate S. The detection unit 600 may transmit a collection result (also referred to as a “detection result”) of a signal emitted from one surface of the substrate S to an inspection unit (not shown). Specifically, the detection unit 600 may transmit the current caused by the detected secondary particles to the inspection unit, and transmit the intensity of X-rays detected in the form of energy and the detection frequency of each intensity to the inspection unit. Meanwhile, the detection unit 600 may include, for example, a semiconductor detector and an energy dispersive spectroscopic detector. Of course, the configuration of the detection unit 600 may be various in addition to the above-described configuration.

The inspection unit (not shown) may be connected to the detection unit 600 and receive a collection result of the detection unit 600 to inspect the presence or absence of defects in the portion of the substrate S to which the particle beam is irradiated and the type of defects. Specifically, the inspection unit may process the current received from the detection unit 600 to form an image. At this time, a method of forming an image by processing current may be various. Here, the image may be an image of a portion of the substrate S to which the particle beam is irradiated. In addition, the inspection unit compares the energy intensity of the X-ray transmitted from the detection unit 600 and the detection frequency data for each energy intensity with the emission X-ray intrinsic energy data for each component previously input, Components can be analyzed quantitatively and qualitatively.

The inspection unit compares at least one of the generated image and analyzed components with at least one of the previously input image and component data, and the presence or absence of defects in the part where the particle beam of the substrate S is irradiated from the contrast result. You can check the kind.

The presence or absence of a defect means whether or not a defect has occurred on one surface of the substrate S, and the type of defect may vary, including an open defect, a short circuit, and an inflow of foreign matter. The operation of the inspection unit may be controlled by a control unit (not shown).

The control unit (not shown) controls the operation of at least one of the driving shaft and the shaft member so that the column unit 200 can be positioned in the inspection area on the substrate S to be inspected, so that the support unit 100 and the column unit At least one of the 200 positions can be adjusted. The control unit may control the operation of the particle beam emission unit 400 so that the particle beam is incident on one surface of the substrate S in the inspection area. The control unit may control the operation of the vacuum forming unit 500 so that the inside of the column unit 200 maintains a desired degree of vacuum. Meanwhile, the control unit may control the operation of the gas supply unit 700 so as to locally create an inert atmosphere on the inspection area.

The gas supply unit 700 may have an injection hole formed at an end. The injection hole may be located around the opening 300. The gas supply unit 700 may include a gas supply pipe 710 having an injection hole formed at an end thereof, and a gas supply source 720 connected to the gas supply pipe 710 and storing an atmospheric gas g therein.

The gas supply pipe 710 may extend so that one side thereof faces the support part 100, and an injection hole at an end thereof may be opened toward one surface of the substrate S. In this case, the injection hole of the gas supply pipe 710 may extend downwardly inclined from the circumference of the opening 300 toward the center, and the lower end of the injection hole may be located at or near the lower surface of the column part 200.

The installation location and structure of the gas supply pipe 710 may be various. The lower surface of the column unit 200 can be located close to a height of tens to hundreds of micrometers from one surface of the substrate S, and the injection port of the gas supply pipe 710 is between the lower surface of the column unit 200 and the substrate S. Atmospheric gas (g) may be injected between one surface. Accordingly, it is possible to reduce the moving distance of the particle beam and signal in the atmosphere, and reduce the loss of the particle beam and signal due to the atmosphere.

The gas supply source 720 may be a gas tank. The gas supply source 720 may accommodate the atmospheric gas g therein, and may supply the atmospheric gas g to the gas supply pipe 710 at a predetermined pressure. The atmospheric gas g may pass through the gas supply pipe 710 and be injected obliquely downward toward the substrate S from an injection hole formed at the end thereof. Accordingly, an atmosphere for inspection of the substrate S may be locally created between the opening 300 and the substrate S.

The atmospheric gas g may include an inert gas. That is, the atmospheric gas g may be at least one gas selected from helium (He), neon (Ne), and argon (Ar). The inert gas g may create an inert atmosphere in a portion of the substrate S to which the particle beam is irradiated. Accordingly, secondary particles and X-rays emitted from the substrate S by the irradiation of the particle beam may pass through the opening 300 to be smoothly collected in the column unit 200.

Of course, the atmosphere gas (g) may include clean air from which dust and moisture are removed and temperature is adjusted. In addition, the atmospheric gas (g) may include nitrogen (N) gas.

Hereinafter, a repair apparatus according to a second embodiment of the present invention will be described.

Since the repair apparatus according to the second embodiment of the present invention to be described below is similar in configuration to the inspection apparatus according to the first embodiment of the present invention described above, the overlapping content will be simplified or omitted, and there are differences. It will be described in detail focusing on the content.

Referring to FIG. 1, a repair apparatus according to a second embodiment of the present invention is a repair apparatus capable of repairing an object to be processed in the atmosphere using a particle beam, and a support part provided in the atmosphere to seat the object to be processed. The column part 200 which is disposed to face the 100 and can be controlled by vacuum, the opening 300 formed in the part facing the object to be treated in the column part 200 to pass the particle beam, A particle beam emission unit 400 installed inside the column unit 300 and a gas supply unit 700 having a function of injecting a source gas are included.

In addition, the repair apparatus may include a vacuum forming unit 500 connected to the column unit 200 and a control unit (not shown) that controls the entire operation of the above-described components of the repair apparatus.

The object to be processed may be a substrate S. The particle beam is incident on the substrate S, and the material constituting the substrate S may be cut to a predetermined area and a predetermined depth at a position where the particle beam on the substrate S is incident. In addition, the particle beam may be incident on the substrate S to form a structure made of a predetermined material at the location where the particle beam on the substrate S is incident. In this case, the intensity of the particle beam for cutting and the intensity of the particle beam for forming a structure may be different. The types of structures can vary.

The particle beam emitter 400 may emit one of an ion beam and a neutral particle beam to one surface of the substrate S through the opening 300. The particle beam emission unit 400 is disposed between a particle beam source 410 capable of emitting a particle beam at a predetermined acceleration voltage and a probe current, the particle beam source 410 and the opening 300, and provides a particle beam. It may include a plurality of electronic lenses 420 that focus and accelerate to guide them to the opening 300. In this case, the particle beam source 410 may include any one of an ion beam source, an atomic beam source, and a neutron beam source. Here, the types and configurations of the particle beam source 410 and the electron lens 420 may vary.

The gas supply unit 700 may include a gas supply pipe 710 having an injection hole formed at an end thereof, and a gas supply source 720 connected to the gas supply pipe 710 and storing a source gas therein.

In the gas supply source 720, a source for forming a structure therein may be accommodated in a solid powder state, and a source gas g may be generated by vaporizing the source for forming the structure in the gas supply source 720. The gas supply source 720 may supply the source gas g to the gas supply pipe 710 together with the carrier gas. The source gas (g) may be injected through the injection hole to the portion where the particle beam of the substrate (S) is irradiated, and thus, a deposition atmosphere or a structure formation atmosphere may be formed between the opening portion 300 and the substrate (S). have.

The source may include a metal source, and the source gas g may include a metal source gas. When an atmosphere of the source gas g is formed in a deposition area where a structure is to be formed on the substrate S and a particle beam is incident thereon, a structure may be formed on the substrate S by the particle beam.

The control unit (not shown) controls the operation of at least one of the driving shaft and the shaft member to position the column part 200 in the repair area, such as a defect location, on the substrate S to be repaired, and the support part 100 and The position of at least one of the column units 200 may be adjusted. In addition, the control unit may control the operation of the gas supply unit 700 so as to locally create a deposition atmosphere on the repair area. In addition, the control unit may control the operation of the particle beam emission unit 400 so that the particle beam is incident on one surface of the substrate S in the repair area. In addition, the control unit may control the operation of the vacuum forming unit 500 so that the inside of the column unit 200 maintains a desired degree of vacuum.

In addition, the control unit cuts the material constituting the substrate S or forms a structure made of a predetermined material on the substrate S according to the type of defect of the substrate S, so that the particle beam emission unit 400 and the gas supply unit ( 700) can be controlled. Here, the type of defect of the substrate S may be a type of defect formed at a predetermined position on the substrate S where the particle beam is to be incident. The defect type may be input to the control unit in advance.

For example, when the defect of the substrate S is an open defect, the control unit operates the gas supply unit 700 to form a structure made of a predetermined material capable of healing the open defect at the defect location on the substrate S. A deposition atmosphere is formed at the location, and the particle beam emission unit 400 is operated to irradiate the particle beam to the defect location to decompose the source gas g, thereby forming a structure made of a predetermined material at the defect location.

The control unit operates the particle beam emission unit 400 to cut the substrate (S) constituent material that causes the defect at the defect location on the substrate (S) if the defect of the substrate (S) is a short circuit and foreign matter inflow. By irradiating the ion beam to the defect location, the material constituting the substrate S can be cut to a predetermined area and a predetermined depth. In this case, the gas supply unit 700 may temporarily stop supplying the source gas g onto the substrate S.

When the material constituting the substrate S is cut, a new structure may be formed at the location where the material constituting the substrate S is cut, if necessary. For example, if the type of defect is foreign matter inflow, the control unit controls the operation of the particle beam emission unit 400 and the gas supply unit 700 after cutting of the material constituting the substrate S, so that the location where the material constituting the substrate S is cut. Can form new structures.

Hereinafter, a particle beam device according to a third embodiment of the present invention will be described.

Since the particle beam apparatus according to the third embodiment of the present invention to be described below is similar in configuration to the inspection apparatus and repair apparatus of the first and second embodiments of the present invention described above, the overlapping contents will be briefly described. Or omitted, and will be described in detail centering on the content with differences.

Referring to FIG. 1, a particle beam device according to a third embodiment of the present invention is a particle beam device capable of inspecting and repairing an object to be treated in the atmosphere using a particle beam, so that the object to be treated can be seated. An opening formed in the column part 200 facing the support part 100 provided in the atmosphere and facing the object to be treated in the column part 200 to pass the particle beam through the column part 200 that can be controlled by vacuum 300, a particle beam emission unit 400 installed inside the column unit 100, a detection unit 600 installed between the particle beam emission unit 400 and the object to be processed so as to detect a signal by the particle beam ), and a gas supply unit 700 having a function of injecting a source gas.

In addition, the particle beam apparatus operates the vacuum forming unit 500 connected to the column unit 200, the particle beam emission unit 400 and the gas supply unit 700 depending on whether or not the object is inspected and the type of defect of the object. It may include a control unit (not shown) for controlling and an inspection unit (not shown) connected to the detection unit 600.

The object to be processed may be a substrate S. In order to inspect the substrate S, a particle beam may be incident on the substrate S to emit secondary particles and X-rays from the substrate S. In addition, in order to repair the substrate S, a particle beam may be incident on the substrate S to cut the material constituting the substrate S, and a structure made of a predetermined material may be formed on the substrate S. In this case, the intensity of the particle beam for inspection of the substrate S and the intensity of the particle beam for repair of the substrate S may be different. In addition, when the substrate S is repaired, the intensity of the particle beam for forming a structure and the intensity of the particle beam for cutting the material constituting the substrate S may be different.

The particle beam emitter 400 may emit at least one of an ion beam, an electron beam, an atomic beam, and a neutron beam to one surface of the substrate S through the opening 300. To this end, the particle beam emitter 400 may include at least one particle beam source 410 and a plurality of electron lenses 420. The particle beam source 410 may include at least one of an ion beam source, an electron beam source, an atomic beam source, and a neutron beam source. The type and configuration of the electronic lens 420 may vary according to the type and number of the particle beam sources 410. The particle beam source 410 may be disposed above the column part 200, and a plurality of electron lenses 420 may be disposed between the particle beam source 410 and the opening 300.

After the particle beam is incident on the substrate S, the detector 600 may detect at least one signal of secondary particles and X-rays emitted from the substrate S. The inspection unit (not shown) may receive a detection result from the detection unit 600 and inspect the presence or absence of defects and the type of defects in the substrate S. The test result may be transmitted to a control unit (not shown).

The gas supply unit 700 may include a gas supply pipe 710 having an injection hole formed at an end thereof, and a gas supply source 720 connected to the gas supply pipe 710 and storing a powdery source therein. The injection hole may be located around the opening 300. The source is vaporized inside the gas supply source 720 and then supplied to the gas supply pipe 710 together with the carrier gas, and the source gas may be injected onto the substrate S through the injection port.

When inspecting the substrate S with the particle beam device, the control unit (not shown) may control the operation of at least one of the driving shaft and the shaft member to position the column unit 200 in the inspection area, and the bias power supply unit ( It is possible to apply a bias voltage to the support 100 by controlling the operation of (not shown). In addition, the control unit may control the operation of the particle beam emission unit 400 so that the particle beam is incident on the substrate S in the inspection area. The signal emitted from the substrate S by the incidence of the particle beam may be detected by the detection unit 600. The inspection unit may receive a detection result from the detection unit 600 and inspect the presence or absence of a defect and the type of defect of the substrate S, and transmit the result to the control unit.

When the substrate S is repaired by the particle beam device, the control unit (not shown) may control the operation of at least one of the driving shaft and the shaft member to position the column unit 200 in the repair area. When the defect of the substrate S is an open defect, the control unit controls the operation of the gas supply unit 700 to form a deposition atmosphere on the repair area, and controls the particle beam emission unit 400 to control the substrate within the repair area. By irradiating the particle beam on the (S), it is possible to form a structure made of a predetermined material.

When the defect of the substrate S is a short circuit and foreign matter inflow, the control unit (not shown) controls the particle beam emission unit 400 to irradiate the particle beam onto the substrate S in the repair area, and configure the substrate S. The material can be cut. Meanwhile, after cutting the material constituting the substrate S, a new structure may be formed at the location where the material constituting the substrate S was cut.

In this case, the repair of the substrate S may be performed after the inspection of the entire area of the substrate S is finished. Alternatively, if a defect is found during the inspection of the substrate S, the substrate S is repaired, and when the repair of the defect is completed, the inspection of the substrate S can be continued. During such a series of operation processes, the control unit may control the operation of the vacuum forming unit 500 to maintain the degree of vacuum inside the column unit 200 at a desired degree of vacuum.

Although the first, second, and third embodiments of the present invention have been described with reference to FIG. 1, the present invention may be configured in various forms including the following modified examples.

2 is a schematic diagram of an inspection apparatus and a repair apparatus according to a first modified example of embodiments of the present invention. 3 is a schematic diagram of an inspection apparatus and a repair apparatus according to a second modified example of embodiments of the present invention. 4 is a schematic diagram of an inspection apparatus and a repair apparatus according to a third modified example of embodiments of the present invention. 5 is a schematic diagram of an inspection apparatus and a repair apparatus according to a fourth modified example of embodiments of the present invention.

When describing the modified examples of the present invention below, if it is not necessary to distinguish between the above-described first embodiment, the second embodiment, and the third embodiment of the present invention, the modified examples will be described without distinction between the embodiments. do. Therefore, hereinafter, the inspection apparatus, the repair apparatus, and the particle beam apparatus are collectively referred to as a processing apparatus. In addition, redundant descriptions are omitted, and features of the processing apparatus according to modified examples of the present invention that are distinguished from the embodiments of the present invention will be described in detail below.

Referring to FIG. 2, the processing apparatus according to the first modified example of the present invention may include a suction unit 800 capable of sucking and removing at least one of a reactant, a product, and an unreacted product on the substrate S. have. The suction unit 800 may include a suction pipe 810 having a suction port formed at an end thereof, and an exhaust pump 820 connected to the suction pipe 810.

In this case, the suction port of the suction pipe 810 may be located around the opening 300. In addition, the suction port of the suction pipe 810 and the injection port of the gas supply unit 700 may be spaced apart from both sides of the opening 300. In this case, the suction port may extend obliquely with respect to one surface of the substrate S, and the inclination direction may be a direction symmetrical to the inclination direction of the injection port, centering on an axis in the vertical direction passing through the opening 300.

When the exhaust pump 820 forms a negative pressure of a predetermined size in the suction pipe 810, an air flow from the injection port to the suction port is formed, and reactants, products and unreacted products on the substrate S can be sucked into the suction port by this air flow. have. A foreign material remover (not shown) is provided at a predetermined position of the suction pipe 810, and thus, it is possible to prevent the exhaust pump 820 from being damaged by foreign materials in reactants, products, and unreacted materials. Here, the reactants, products and unreacted products mean various reactants, products and unreacted products generated or present on the substrate S by irradiation of a particle beam. A clean between the substrate S and the opening 300 may be maintained by the suction unit 800.

On the other hand, the level of the negative pressure formed by the exhaust pump 820 is sufficient to prevent or suppress the atmospheric gas (g) or the source gas (g) injected onto the substrate (S) from flowing into the opening (300). It can be any size. This may be determined to a suitable value according to the size of the opening 300 and the internal pressure of the column part 200, and the injection angle and injection pressure of the atmospheric gas g and the source gas g.

Referring to FIG. 3, in the processing apparatus according to the second modified example of the present invention, a protrusion 910 formed on the lower surface of the column part 200 is disposed between the opening 300 and the injection hole of the gas supply part 700. Can include.

The protrusion 910 may be formed to be convex downward from the lower surface of the column part 200, and may extend along the circumference of the opening 300. The protrusion 910 serves as a dam that blocks the atmospheric gas g and the source gas g from directly flowing into the opening 300 while riding on the lower surface of the column part 200. The atmosphere gas g and the source gas g may be smoothly injected onto the substrate S by the protrusion 910.

Referring to FIG. 4, in the processing apparatus according to the third modified example of the present invention, at least one of a charged particle beam and a neutral particle beam is provided on one surface of the substrate S through the particle beam emission unit 400. Can emit one.

That is, the particle beam emission unit 400 may include at least one charged particle beam source capable of emitting a charged particle beam and at least one neutral particle beam source capable of emitting a neutral particle beam, and the substrate ( At least one of a charged particle beam and a neutral particle beam may be selected and emitted on one side of S).

Alternatively, the particle beam emission unit 400 includes at least one ion beam source capable of emitting an ion beam and at least one neutral particle beam source capable of emitting a neutral particle beam, and one surface of the substrate S At least one of an ion beam and a neutral particle beam may be selected and emitted.

Here, the charged particle beam source may include at least one of an ion beam source and an electron beam source, and the neutral particle beam source may include at least one of an atomic beam source and a neutron beam source.

That is, the processing apparatus according to the third modified example of the present invention may include a plurality of particle beam sources inside the column part 200. Further, the processing apparatus may include a source replacement unit 920 installed inside the column unit 200 and supporting a plurality of particle beam sources in a movable manner. The source replacement unit 920 may have various configurations such as a linear motor and an LM guide. The configuration of the source replacement unit 920 may be various. The source replacement unit 920 may position a desired type of particle beam source on the electronic lens 420. Its operation can be controlled by the control unit.

Referring to FIG. 5, in the processing apparatus according to the fourth modified example of the present invention, the second gas supply units 930, 940, and 950 connected to the gas supply unit 700 so that inert gas can be injected under the opening 300. , 960).

A second gas supply unit, a second gas supply source 930 in which an inert gas is stored, a second gas supply pipe 940 connecting the second gas supply source 930 to the gas supply pipe 710, and a second gas supply pipe 940 ) And a second valve 960 mounted on the gas supply pipe 710 between the first valve 950 and the second gas supply pipe 940 and the gas supply source 720.

In this case, the second gas supply unit and the gas supply unit 700 may inject different types or inert gases g of the same type onto the substrate S.

Alternatively, the second gas supply unit and the gas supply unit 700 may selectively inject the inert gas and the source gas g onto the substrate S.

The operation of the second gas supply unit and the gas supply unit 700 may be controlled by the control unit. In this case, the control unit may select and operate at least one of the second gas supply unit and the gas supply unit 700 according to the type of the particle beam source to be operated and the emission intensity of the particle beam.

The above embodiment of the present invention is for the purpose of explanation of the present invention and is not intended to limit the present invention. It should be noted that the configurations and methods disclosed in the above embodiments and modified examples of the present invention will be combined and modified in various forms by combining or intersecting with each other, and modified examples thereof can also be seen as the scope of the present invention. That is, the present invention will be implemented in a variety of different forms within the scope of the claims and the technical idea equivalent thereto, and a person in the technical field to which the present invention corresponds can various embodiments within the scope of the technical idea of the present invention. You will be able to understand.

100: support
200: column part
300: opening
400: particle beam emitter
500: vacuum forming unit
600: detection unit
700: gas supply
800: suction unit
910: protrusion
920: source replacement unit
930: second gas source

Claims (20)

As an inspection device capable of inspecting an object to be treated in the atmosphere using a particle beam generated in a vacuum,
A column part disposed to face the support part provided in the atmosphere so that the object to be processed may be seated, and the inside of which may be controlled by vacuum;
An opening formed in a portion facing the object to be processed in the column portion to pass the particle beam;
Particle beam emission part installed inside the column part;
Includes; a detection unit installed between the particle beam emission unit and the object to be processed so as to detect a signal by the particle beam,
The opening is formed through the column portion so as to pass the particle beam without being physically obstructed other than the atmosphere. The method according to claim 1,
The column part is disposed above the support part,
The opening is formed to pass through the lower portion of the column part,
The opening has a size of 10 micrometers or more and less than 1000 micrometers, and encloses the path of the particle beam. The method according to claim 1,
The particle beam emission unit is an inspection device capable of emitting any one of a charged particle beam and a neutral particle beam to one surface of the object to be processed through the opening. The method according to claim 1,
The particle beam emitting unit,
At least one charged particle beam source capable of emitting a charged particle beam to one surface of the object through the opening;
At least one neutral particle beam source capable of emitting a neutral particle beam to one surface of the object to be processed through the opening. The method according to claim 1,
Includes; a gas supply unit having a function of injecting an atmospheric gas for inspection of the object to be processed,
The gas supply part is an inspection device in which an injection port is formed at an end. The method of claim 5,
The gas supply unit,
A gas supply pipe having the injection hole formed at an end thereof;
Includes; a gas supply source connected to the gas supply pipe and storing atmospheric gas therein,
The injection hole is an inspection device that extends downwardly inclined from a circumference of the opening toward the center of the opening. The method of claim 5,
And a protrusion formed on a lower surface of the column part so as to be positioned between the injection port and the opening. As a repair device capable of repairing an object to be processed in the atmosphere using a particle beam generated in a vacuum,
A column part disposed to face the support part provided in the atmosphere so that the object to be processed may be seated, and the inside of which may be controlled by vacuum;
An opening formed in a portion facing the object to be processed in the column portion to pass the particle beam;
Particle beam emission part installed inside the column part;
Includes; a gas supply unit having a function of injecting a source gas,
The opening is formed through the column portion so as to pass the particle beam without being physically obstructed other than the atmosphere. The method of claim 8,
The column part is disposed above the support part,
The opening is formed to pass through the lower portion of the column part,
The opening has a size of 10 micrometers or more and less than 1000 micrometers, and a repair device surrounding the path of the particle beam. The method of claim 8,
The particle beam emitting unit is a repair apparatus capable of emitting either an ion beam or a neutral particle beam to one surface of the object to be processed through the opening. The method of claim 8,
The particle beam emitting unit,
At least one ion beam source capable of emitting an ion beam to one surface of the object to be processed through the opening;
And at least one neutral particle beam source capable of emitting a neutral particle beam to one surface of the object to be processed through the opening. The method of claim 8,
A control unit for controlling operations of the particle beam emission unit and the gas supply unit to cut the object to be processed or form a structure on the object according to the type of defect of the object to be processed; And
And a second gas supply unit connected to the gas supply unit to inject an inert gas under the opening through the gas supply unit. The method of claim 8,
A repair device in which the gas supply part has an injection hole formed at an end. The method of claim 13,
The gas supply unit,
A gas supply pipe having the injection hole formed at an end thereof;
Includes; a gas supply source connected to the gas supply pipe and storing a source gas therein,
The injection port is a repair device that extends downwardly inclined in a direction toward the center of the opening around the opening. The method of claim 13,
Including; a suction unit capable of sucking and removing at least one of the reactant, product, and unreacted product on the object to be treated,
The suction part has a suction port formed at the end,
The suction port is located around the opening,
The intake port and the injection port are spaced apart from both sides of the opening. As a particle beam device capable of inspecting and repairing an object to be treated in the atmosphere using a particle beam generated in a vacuum,
A column part disposed to face the support part provided in the atmosphere so that the object to be processed may be seated, and the inside of which may be controlled by vacuum;
An opening formed in a portion facing the object to be processed in the column portion to pass the particle beam;
Particle beam emission part installed inside the column part;
A detection unit installed between the particle beam emitting unit and the object to be processed so as to detect a signal by the particle beam;
Includes; a gas supply unit having a function of injecting a source gas,
The opening is a particle beam device which is formed through the column to pass the particle beam without physically obstructing the atmosphere. The method of claim 16,
The column part is disposed above the support part,
The opening is formed to pass through the lower portion of the column part,
The opening has a size of 10 micrometers or more and less than 1000 micrometers, and a particle beam device surrounding a path of the particle beam. The method of claim 16,
The particle beam emitting unit is a particle beam device capable of emitting at least one of an ion beam, an electron beam, an atomic beam, and a neutron beam to one surface of the object through the opening. The method of claim 16,
Particle beam device having an injection hole formed at the end of the gas supply unit. The method of claim 16,
And a control unit for controlling the operation of the particle beam emission unit and the gas supply unit according to whether the object is inspected and the type of defect of the object.

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