CN114270471A - Inspection apparatus, repair apparatus, and particle beam apparatus - Google Patents
Inspection apparatus, repair apparatus, and particle beam apparatus Download PDFInfo
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- CN114270471A CN114270471A CN202080057948.4A CN202080057948A CN114270471A CN 114270471 A CN114270471 A CN 114270471A CN 202080057948 A CN202080057948 A CN 202080057948A CN 114270471 A CN114270471 A CN 114270471A
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- 239000002245 particle Substances 0.000 title claims abstract description 227
- 238000007689 inspection Methods 0.000 title claims abstract description 58
- 230000008439 repair process Effects 0.000 title claims abstract description 48
- 238000001514 detection method Methods 0.000 claims abstract description 27
- 239000007789 gas Substances 0.000 claims description 151
- 230000007547 defect Effects 0.000 claims description 47
- 230000007935 neutral effect Effects 0.000 claims description 24
- 238000010884 ion-beam technique Methods 0.000 claims description 23
- 238000002347 injection Methods 0.000 claims description 20
- 239000007924 injection Substances 0.000 claims description 20
- 239000000126 substance Substances 0.000 claims description 17
- 238000010894 electron beam technology Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 9
- 239000011261 inert gas Substances 0.000 claims description 8
- 239000000376 reactant Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 description 118
- 230000004048 modification Effects 0.000 description 18
- 238000012986 modification Methods 0.000 description 18
- 239000000463 material Substances 0.000 description 17
- 238000007666 vacuum forming Methods 0.000 description 12
- 239000000470 constituent Substances 0.000 description 11
- 239000011163 secondary particle Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 7
- 239000010409 thin film Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
The present invention provides an inspection apparatus capable of inspecting an object to be processed in an atmosphere by a particle beam and a repair apparatus capable of repairing an object to be processed in an atmosphere by a particle beam, wherein the inspection apparatus includes: a column part configured in the atmosphere and having an interior controlled to be vacuum; an opening portion formed in the pillar portion; a particle beam emitting part disposed inside the column part; and a detection unit provided between the particle beam emitting unit and the object to be treated, the repairing apparatus including: a column part configured in the atmosphere and having an interior controlled to be vacuum; an opening portion formed in the pillar portion; a particle beam emitting part disposed inside the column part; and a gas supply portion capable of injecting a source gas.
Description
Technical Field
The invention relates to an inspection apparatus, a repair apparatus, and a particle beam apparatus. More particularly, the present invention relates to an inspection apparatus, a repair apparatus, and a particle beam apparatus capable of inspecting and repairing an object to be processed in the atmosphere.
Background
In the manufacture of display devices, various defects may be generated on a substrate. Therefore, in manufacturing the display device, a process of inspecting the defect and a process of repairing the found defect can be performed.
Scanning electron microscopes and focused particle beam devices are used for image generation, composition analysis, and cutting of thin films formed on substrates. The scanning electron microscope and the focused particle beam device emit a particle beam on a thin film on a substrate loaded in a vacuum chamber, and can generate an image of the thin film formed on the substrate and analyze components by collecting various particles and X-rays emitted from the substrate. Further, the focused particle beam device can cut the thin film by emitting a particle beam on the thin film on the substrate.
A chemical vapor deposition repair apparatus is used in a process for repairing a defect formed on a substrate. The chemical vapor deposition repair apparatus may deposit a thin film by supplying a metal source to a defective position of the substrate and irradiating a laser, thereby connecting the disconnected portion of the conductive line.
Conventionally, since an inspection process and a repair process are performed in a vacuum chamber using different apparatuses, there is a problem in that process productivity is reduced.
The background art of the present invention is disclosed in the following patent documents.
(Prior art document)
(patent document)
(patent document 1) KR10-2016-0134235A
(patent document 2) KR10-1680291B1
Disclosure of Invention
Technical problem to be solved
The invention provides an inspection apparatus capable of inspecting an object to be processed provided in the atmosphere by a particle beam.
The invention provides a repairing device capable of repairing an object to be processed arranged in the atmosphere by using a particle beam.
The invention provides a particle beam device capable of inspecting and repairing a processed object arranged in the atmosphere by using a particle beam.
Means for solving the problems
An inspection apparatus according to an embodiment of the present invention is an inspection apparatus capable of inspecting an object to be processed in an atmosphere by a particle beam, including: a column part which is arranged opposite to a support part arranged in the atmosphere in a manner that the object to be processed can be placed, and the interior of which can be controlled to be vacuum; an opening formed in a portion of the column portion facing the object to be processed so as to allow the particle beam to pass therethrough; a particle beam emitting portion provided inside the column portion; and a detection unit disposed between the particle beam emission unit and the object to be processed so as to be able to detect a signal based on the electron beam.
The column part may be disposed above the support part, and the opening part may be formed to penetrate through a lower part of the column part, and the opening part may have a size of 10 micrometers or more and less than 1000 micrometers and surround a traveling path of the particle beam.
The particle beam emitter may emit one of a charged particle beam and a neutral particle beam to one surface of the object through the opening.
The particle beam emitting part may include: at least one charged particle beam source capable of emitting a charged particle beam to one surface of the object to be processed through the opening; and at least one neutral particle beam source capable of emitting a neutral particle beam to one surface of the object to be processed through the opening portion.
A gas supply portion having a function of being capable of spraying an atmosphere gas for inspecting the object to be processed may be included, at least a part of the gas supply portion extending so as to face the support portion and having a spray port formed at a distal end thereof.
The gas supply part may include: a gas supply pipe formed with the injection port at a distal end thereof; and a gas supply source connected to the gas supply pipe and storing an atmosphere gas therein, the injection port extending obliquely downward from a periphery of the opening portion in a direction toward a center of the opening portion.
A protrusion portion may be included, the protrusion portion being formed under the pillar portion so as to be located between the ejection opening and the opening portion.
A repair device according to an embodiment of the present invention is a repair device capable of repairing an object to be treated in an atmosphere using a particle beam, including: a column part which is arranged opposite to a support part arranged in the atmosphere in a manner that the object to be processed can be placed, and the interior of which can be controlled to be vacuum; an opening formed in a portion of the column portion facing the object to be processed so as to allow the particle beam to pass therethrough; a particle beam emitting portion provided inside the column portion; and a gas supply portion having a function of being capable of injecting a source gas.
The column part may be disposed above the support part, and the opening part may be formed to penetrate through a lower part of the column part, and the opening part may have a size of 10 micrometers or more and less than 1000 micrometers and surround a traveling path of the particle beam.
The particle beam emitting unit may emit one of an ion beam and a neutral particle beam to one surface of the object to be processed through the opening.
The particle beam emitting part may include: at least one ion beam source capable of emitting an ion beam to one surface of the object to be processed through the opening; and at least one neutral particle beam source capable of emitting a neutral particle beam to one surface of the object to be processed through the opening portion.
The method can comprise the following steps: a control part which controls the operation of the particle beam emitting part and the gas supply part so as to cut the processed object or form a structure on the processed object according to the defect type of the processed object; and a second gas supply part connected to the gas supply part so that an inert gas can be injected to a lower side of the opening part through the gas supply part.
At least a portion of the gas supply part may extend so as to face the support part and be formed with an injection port at a distal end.
The gas supply part may include: a gas supply pipe formed with the injection port at a distal end thereof; and a gas supply source connected to the gas supply pipe and storing an atmosphere gas therein, the injection port extending from a periphery of the opening portion in a direction inclined downward toward a center of the opening portion.
The treatment apparatus may further include a suction unit capable of sucking and removing at least one of a reactant, a product, and an unreacted substance on the treatment target, wherein the suction unit is located around the opening, and the suction unit and the ejection port are spaced apart from each other on both sides of the opening.
A particle beam apparatus according to an embodiment of the present invention is a particle beam apparatus capable of inspecting and repairing an object to be processed in the atmosphere by a particle beam, including: a column part which is arranged opposite to a support part arranged in the atmosphere in a manner that the object to be processed can be placed, and the interior of which can be controlled to be vacuum; an opening formed in a portion of the column portion facing the object to be processed so as to allow the particle beam to pass therethrough; a particle beam emitting portion provided inside the column portion; a detection section provided between the particle beam emission section and an object to be processed so as to be able to detect a signal according to an electron beam; and a gas supply portion having a function of being capable of injecting a source gas.
The column part may be disposed above the support part, and the opening part may be formed to penetrate through a lower part of the column part, and the opening part may have a size of 10 micrometers or more and less than 1000 micrometers and surround a traveling path of the particle beam.
The particle beam emitter may emit at least one of an ion beam, an electron beam, an atomic beam, and a neutron beam to one surface of the object through the opening.
The gas supply portion is formed with an injection port at a distal end.
A control part may be included, the control part controlling the operations of the particle beam emitting part and the gas supplying part according to whether the object is inspected or not and a defect type of the object.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the embodiment of the present invention, it is possible to provide the object to be processed in the atmosphere facing the pillar portion having the vacuum formed therein, and to obtain the image and the composition information of the object to be processed by using the particle beam emitted through the opening portion formed in the pillar portion and to inspect the presence or absence of the defect and the type of the defect. Further, according to the embodiment of the present invention, it is possible to cut the object to be processed or form a structure on the object to be processed according to the defect type of the object to be processed by the particle beam emitted through the opening portion of the pillar portion.
As described above, since the object to be processed can be inspected and repaired by the particle beam in the atmosphere, it is possible to easily inspect and repair a substrate made of a material that is difficult to inspect and repair in a vacuum atmosphere, for example, a substrate made of a flexible material.
Drawings
Fig. 1 is a schematic view of an inspection apparatus, a repair apparatus, and a particle beam apparatus according to an embodiment of the present invention.
Fig. 2 is a schematic diagram of an inspection apparatus, a repair apparatus, and a particle beam apparatus according to a first modification of the embodiment of the present invention.
Fig. 3 is a schematic diagram of an inspection apparatus, a repair apparatus, and a particle beam apparatus according to a second modification of the embodiment of the present invention.
Fig. 4 is a schematic diagram of an inspection apparatus, a repair apparatus, and a particle beam apparatus according to a third modification of the embodiment of the present invention.
Fig. 5 is a schematic view of an inspection apparatus, a repair apparatus, and a particle beam apparatus according to a fourth modification of the embodiment of the present invention.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be embodied in various forms. The embodiments of the present invention have been provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. The drawings may be exaggerated in order to illustrate embodiments of the present invention, and like reference numerals in the drawings refer to like elements.
The inspection apparatus, the repair apparatus, and the particle beam apparatus according to the embodiments of the present invention may be an atmospheric pressure processing apparatus using a particle beam. In this case, the particle beam may include a charged particle beam and a neutral particle beam. For example, the charged particle beam may include a positive ion beam, a negative ion beam, and an electron beam. The positive ion beam and the negative ion beam are collectively referred to as an ion beam. The neutral particle beam may include an atom beam and a neutron beam. On the other hand, the particle beam may be simply referred to as a beam.
Fig. 1 is a schematic view of an inspection apparatus, a repair apparatus, and a particle beam apparatus according to an embodiment of the present invention.
Hereinafter, an inspection apparatus according to a first embodiment of the present invention will be described in detail with reference to fig. 1. An inspection apparatus according to a first embodiment of the present invention is an inspection apparatus for inspecting an object to be processed in an atmosphere by a particle beam, including: a column (column) unit 200, which is disposed opposite to the support unit 100 installed in the atmosphere so that the object to be treated can be placed thereon, and the interior of which can be controlled to be vacuum; an opening 300 formed in a portion of the pillar 200 facing the object to be processed, so that the particle beam passes through the opening 300; a particle beam emitting part 400, the particle beam emitting part 400 being disposed inside the column part 200; and a detecting part 600, the detecting part 600 being disposed between the particle beam emitting part 400 and the object to be processed so as to be able to detect a signal according to the electron beam.
Further, the inspection apparatus may include: a vacuum forming part 500, the vacuum forming part 500 being connected to the pillar part 200; an inspection unit (not shown) connected to the detection unit 600 and capable of inspecting the object to be processed for the presence or absence of a defect and the type of the defect by using a signal; and a control unit (not shown) for controlling the overall operation of the above-described components of the inspection apparatus.
Further, the inspection apparatus may further include a gas supply unit 700, and the gas supply unit 700 may have a function of spraying the atmosphere gas g for inspecting the object to be processed.
The object to be processed may be a substrate S. In this case, the substrate S may include wafers and glass panels used in manufacturing various electronic components in manufacturing processes of fabricating various display devices including LCDs, OLEDs, and LEDs, solar cells, semiconductor chips, and the like. On the other hand, the object to be processed may be various ones other than the substrate S. The substrate S is disposed in the atmosphere and may be disposed on the support 100.
When the particle beam is incident to the substrate S, secondary particles and X-rays may be emitted from the substrate S. Here, the secondary particles may be at least any one of secondary ions, backscattered electrons, and secondary electrons. The secondary particles and X-rays may be collectively referred to as signals. The signal emitted from the substrate S may be detected by the detection part 600.
The support part 100 may be formed in a plate type. For example, the support 100 may be a table. The support portion 100 may be disposed in the atmosphere, may be located at a lower side of the pillar portion 200, and may support the substrate S in an atmospheric pressure atmosphere. The support part 100 may have a predetermined shape and size capable of supporting the substrate S. The structure of the support part 100 may be various.
The support portion 100 may be provided on a table (not shown). The support portion 100 may be provided in a fixed position or movable in at least any one of a plurality of directions intersecting with each other by a drive shaft (not shown). The plurality of directions may include an up-down direction, a left-right direction, and a front-back direction. The left-right direction and the front-rear direction may be directions parallel to the upper surface of the support portion 100, and the up-down direction may be directions intersecting the upper surface of the support portion 100.
The support portion 100 may be connected to a bias power supply portion (not shown), and a bias voltage may be applied to the support portion 100 through the bias power supply portion. The secondary particles emitted from the substrate S can be directionally moved from the substrate S toward the pillar portion 200 by the repulsive force of the bias power source.
The pillar portion 200 may be disposed on the upper side of the support portion 100. For example, the pillar portion 200 may be spaced apart from the substrate S to be placed on the upper surface of the support portion 100 by a height of several tens to several hundreds of micrometers. For example, the spacing height may be 100 microns. Of course, the spacing height may vary.
The pillar portion 200 may face the support portion 100 in the up-down direction. The column part 200 and the support part 100 are movable relative to each other. For this reason, the pillar portion 200 may be provided so as to be movable in at least any one direction. For example, at least one shaft member (not shown) may be movably provided on the table, and the column portion 200 may be supported thereby. Of course, the support portion 100 may be movable while the column portion 200 is fixed in position.
The pillar portion 200 may extend in the up-down direction and may have a cylindrical shape. Of course, the shape thereof may be various, such as a square cylindrical shape. The pillar portion 200 may be a vacuum vessel. The pillar portion 200 may include an upper wall, a lower wall, and a side wall. In this case, the upper wall, the lower wall, and the side wall may be collectively referred to as a wall body. The post 200 can define an interior space from the wall. The upper and lower walls are spaced apart from each other in the up-down direction and may extend in the left-right and front-rear directions, respectively. The side walls may extend in an up-down direction to connect edge ends of the upper and lower walls to each other. The lower wall may extend from the marginal end portion downwardly inclined toward the central portion. That is, the center portion of the lower wall may protrude downward. Of course, the structure of the pillar portion 200 may be various.
The inner space of the column 200 can be controlled to be vacuum for the generation, focusing and acceleration of the particle beam. That is, the column part 200 may have a vacuum chamber formed therein. For this, the pillar portion 200 may be connected with the vacuum forming portion 500. The vacuum chamber can be controlled to a low vacuum. The low vacuum may be, for example, 110-3torr to 10-4torr. Further, the vacuum chamber can be controlled to a high vacuum. The high vacuum may be, for example, 10-6torr to 10-9torr. Of course, the degree of vacuum in the vacuum chamber may vary.
The opening 300 may be formed at a lower portion of the pillar portion 200. That is, the opening 300 may be formed so as to penetrate the center portion of the lower wall of the pillar portion 200 in the vertical direction. The opening 300 may surround a traveling path of the particle beam. The opening 300 may have a size of, for example, 10 micrometers or more and less than 1000 micrometers. Preferably, the opening part 300 may have a size of 10 to 100 micrometers. In this case, if the size of the opening 300 is larger than the above numerical range, it is difficult to maintain the vacuum chamber in vacuum, and if the size of the opening 300 is smaller than the above numerical range, it is difficult to pass the particle beam and the signal based thereon to a desired degree. Here, the size means a width or a diameter in any one of the left-right and front-rear directions. The cross-sectional shape of the opening 300 may be circular. Of course, the shape may be various such as a quadrangle.
When the particle beam passes through the opening 300, there is no physically obstructing substance other than the atmosphere, and thus scattering and loss of the particle beam can be minimized or prevented. Further, even when the signal emitted from the substrate S passes through the opening portion 300, since there is no interfering substance other than the atmosphere, scattering and loss thereof can be minimized or prevented.
The particle beam emitter 400 can emit either a charged particle beam or a neutral particle beam to one surface of the substrate S through the opening 300. The particle beam emitting portion 400 is positioned above the pillar portion 200 and may be disposed toward the opening 300.
The particle beam emitting part 400 may include: a particle beam source 410, said particle beam source 410 capable of emitting a particle beam at a determined acceleration voltage and probe current; and a plurality of electron lenses 420, the plurality of electron lenses 420 being disposed between the particle beam source 410 and the aperture 300, and being capable of focusing and accelerating a particle beam emitted from the particle beam source 410 by at least one of an electric field and a magnetic field and guiding the particle beam toward the aperture 300.
For example, the particle beam source 410 may include any one of an ion beam source, an electron beam source, an atom beam source, and a neutron beam source. Electron lens 420 may be provided in a structure and manner suitable for the source (source) type. Of course, the type and configuration of such particle beam source 410 and electron lens 420 may vary.
The vacuum forming part 500 may be connected to, for example, an upper portion of the pillar part 200. The vacuum forming part 500 may include a vacuum pump 510 and vacuum piping 520. The vacuum pump 510 may form a vacuum inside the pillar portion 200 and maintain the formed vacuum. Vacuum piping 520 may connect the vacuum pump 510 to the column section 200.
The vacuum pump 510 can reduce the suction flow rate to a vacuum of a desired level, which is greater than the flow rate of the air flowing into the column section 200 through the opening 300, until the interior of the column section 200 is reduced in pressure. Thereafter, the vacuum pump 510 may adjust its suction flow rate to maintain the magnitude of the vacuum formed inside the column part 200 at a desired magnitude. For example, the flow rate of the vacuum pump 510 may be reduced in accordance with the flow rate of the air flowing into the column section 200 through the opening 300, and the vacuum atmosphere inside the column section 200 may be maintained in a balanced state. In this case, the equilibrium state means a state in which the flow rate of air flowing into column section 200 through opening 300 and the flow rate of air discharged from column section 200 to vacuum pump 510 through vacuum pipe 520 are adjusted to be equal to each other.
The detection part 600 may be located between the particle beam emission part 400 and the substrate S. The detection portion 600 may collect a signal of at least any one of the secondary particles and the X-rays emitted from one surface of the substrate S. The detection part 600 may transmit a collection result (also referred to as a "detection result") of signals emitted from one surface of the substrate S to an inspection part (not shown). Specifically, the detection unit 600 may transmit the current caused by the detected secondary particles to the inspection unit, and transmit the intensity of the X-rays detected in the form of energy and the detection frequency for each intensity to the inspection unit. On the other hand, the detection section 600 may include, for example, a semiconductor detector and an energy-dispersive spectroscopic detector. Of course, the structure of the detection unit 600 may be varied in addition to the above-described structure.
The inspection unit (not shown) may be connected to the detection unit 600, and may inspect the substrate S for the presence or absence of a defect and the type of a defect in a portion irradiated with the particle beam, in response to the result collected by the detection unit 600. Specifically, the inspection unit may process the current received from the detection unit 600 to form an image. In this case, the manner in which the current is processed to form an image may be varied. Here, the image may be an image of a portion of the substrate S irradiated with the particle beam. Further, the inspection unit may quantitatively and qualitatively analyze the components of the portion of the substrate S irradiated with the particle beam by comparing the energy intensity of the X-ray received from the detection unit 600 and the detection frequency data for each energy intensity with the emission X-ray specific energy data for each component inputted in advance.
The inspection unit compares at least one of the generated image and the analyzed component with at least one of the image and the component data input in advance, and can inspect the substrate S for the presence or absence of a defect and a defect type in a portion irradiated with the particle beam from the comparison result.
The defect occurrence unintentionally means whether a defect is generated on one surface of the substrate S, and the defect type may be various, including an open (open) defect, a short circuit, and a foreign substance inflow. The operation of the inspection unit may be controlled by a control unit (not shown).
The control unit (not shown) can control the operation of at least one of the drive shaft and the shaft member to control the position of at least one of the support portion 100 and the column portion 200 such that the column portion 200 is positioned in the inspection region on the substrate S to be inspected. The control part may control the operation of the particle beam emitting part 400 so that the particle beam is incident to one surface of the substrate S within the inspection region. The control part may control the operation of the vacuum forming part 500 so that the interior of the pillar part 200 maintains a desired degree of vacuum. On the other hand, the control part may also control the operation of the gas supply part 700 so as to be able to create an inert atmosphere locally on the inspection area.
The gas supply part 700 may be formed with an injection port at a distal end. The ejection ports may be located around the opening 300. The gas supply part 700 may include: a gas supply pipe 710, the gas supply pipe 710 having a jet port formed at a distal end thereof; and a gas supply source 720, the gas supply source 720 being connected to the gas supply pipe 710 and storing an atmosphere gas g therein.
One side of the gas supply pipe 710 extends toward the support part 100 and an injection port of a tip thereof may be opened toward one surface of the substrate S. In this case, the injection port of the gas supply pipe 710 may extend obliquely downward from the periphery of the opening portion 300 in a direction toward the center and a lower end portion of the injection port may be located under or near the pillar portion 200.
The arrangement position and structure of the gas supply pipe 710 may be various. The lower surface of the column part 200 may be closely disposed at a height of several tens to several hundreds micrometers from one surface of the substrate S, and the injection port of the gas supply pipe 710 may inject the atmosphere gas g between the lower surface of the column part 200 and the one surface of the substrate S. Therefore, the moving distance of the particle beam and the signal in the atmosphere can be reduced, and the loss of the particle beam and the signal caused by the atmosphere can be reduced.
The gas supply 720 may be a gas tank. The gas supply source 720 may contain the atmosphere gas g inside and supply the atmosphere gas g to the gas supply pipe 710 at a predetermined pressure. The atmosphere g can be obliquely ejected downward toward the substrate S from an ejection port formed at a distal end thereof through the gas supply pipe 710. Therefore, an atmosphere for inspecting the substrate S may be locally created between the opening portion 300 and the substrate S.
The atmospheric gas g may include an inert gas. That is, the atmosphere gas g may be at least one gas selected from helium (He), neon (Ne), and argon (Ar). The inert gas g may create an inert atmosphere at the portion of the substrate S irradiated with the particle beam. Therefore, the secondary particles and the X-rays emitted from the substrate S can be smoothly collected in the pillar portion 200 by passing through the opening 300 by the irradiation of the particle beam.
Of course, the atmosphere gas g may also include clean air from which dust and moisture are removed and the temperature is adjusted. Further, the atmosphere gas g may also include nitrogen (N).
Hereinafter, a repairing apparatus according to a second embodiment of the present invention will be described.
Since the repair apparatus according to the second embodiment of the present invention to be described below is similar in structure to the inspection apparatus of the first embodiment of the present invention described above, the description thereof will be simplified or omitted with respect to overlapping contents, and detailed description will be made centering on the contents having differences.
Referring to fig. 1, a repair apparatus according to a second embodiment of the present invention includes, as a repair apparatus capable of repairing an object to be processed in the atmosphere by a particle beam: a column part 200, the column part 200 and the support part 100 arranged in the atmosphere in a manner that the object to be processed can be placed are arranged opposite to each other, and the interior of the column part 200 can be controlled to be vacuum; an opening 300 formed in a portion of the pillar 200 facing the object to be processed so as to allow the particle beam to pass therethrough; a particle beam emitting part 400, the particle beam emitting part 400 being disposed inside the column part 200; and a gas supply part 700, the gas supply part 700 having a function of being capable of injecting a source gas.
Further, the repair device may include: a vacuum forming part 500, the vacuum forming part 500 being connected to the pillar part 200; and a control unit (not shown) for controlling the overall operation of the above-described components of the repair apparatus.
The object to be processed may be a substrate S. The particle beam may be incident on the substrate S and the substrate S constituent substance may be cut at a predetermined area and a predetermined depth at a position on the substrate S where the particle beam is incident. Further, the particle beam may be incident on the substrate S, and a structure formed of a predetermined substance may be formed at a position on the substrate S where the particle beam is incident. In this case, the intensity of the particle beam for cutting and the intensity of the particle beam for forming the structure may be different. The type of construction can vary.
The particle beam emitting unit 400 can emit either an ion beam or a neutral particle beam to one surface of the substrate S through the opening 300. The particle beam emitting part 400 may include: a particle beam source 410, said particle beam source 410 capable of emitting a particle beam at a determined acceleration voltage and probe current; and a plurality of electron lenses 420, the plurality of electron lenses 420 being disposed between the particle beam source 410 and the opening 300, and focusing and accelerating the particle beam to be guided to the opening 300. In this case, the particle beam source 410 may include any one of an ion beam source, an atom beam source, and a neutron beam source. Here, the type and structure of such a particle beam source 410 and an electron lens 420 may be various.
The gas supply part 700 may include: a gas supply pipe 710, the gas supply pipe 710 having a jet port formed at a distal end thereof; and a gas supply source 720, the gas supply source 720 being connected to the gas supply pipe 710 and storing a source gas therein.
The gas supply source 720 may internally contain a source for forming the structure in a solid powder state, and may generate the source gas g by vaporizing the source for forming the structure in the gas supply source 720. The gas supply source 720 may supply the source gas g to the gas supply pipe 710 together with the carrier gas. The source gas g may be injected to the portion of the substrate S irradiated with the particle beam through the injection port, and thus, a deposition atmosphere or a structure forming atmosphere may be formed between the opening 300 and the substrate S.
The source may comprise a metal source and the source gas g may comprise a metal source gas. When a source gas g atmosphere is formed in a deposition region on a substrate S where a structure is to be formed, and a particle beam is incident, the structure can be formed on the substrate S by the particle beam.
The control section (not shown) can adjust the position of at least any one of the support section 100 and the column section 200 by controlling the operation of at least one of the drive shaft and the shaft member so that the column section 200 is located at a repair area, for example, a defective position, on the substrate S to be repaired. Further, the control part may control the operation of the gas supply part 700 so as to locally create a deposition atmosphere on the repair area. Further, the control part may control the operation of the particle beam emitting part 400 so that the particle beam is incident on one surface of the substrate S within the repair area. In addition, the control part may control the operation of the vacuum forming part 500 so that the interior of the pillar part 200 can maintain a desired degree of vacuum.
Further, the control part may control the operations of the particle beam emitting part 400 and the gas supply part 700 so as to cut the substrate S constituent materials or form a structure formed of a fixed material on the substrate S according to the defect type of the substrate S. Here, the defect type of the substrate S may be a defect type of a predetermined position formed on the substrate S to which the particle beam is to be incident. The defect type may be input to the control section in advance.
For example, when the defect of the substrate S is an open defect, the control part forms a deposition atmosphere at the defect position on the substrate S by operating the gas supply part 700 so that a structure formed of a predetermined substance capable of repairing the open defect can be formed at the defect position on the substrate S, and decomposes the source gas g by operating the particle beam emitting part 400 to irradiate a particle beam to the defect position, so that the structure formed of the predetermined substance can be formed at the defect position.
When the defect of the substrate S is a short circuit or a foreign material flow, the control unit operates the particle beam emitting unit 400 to irradiate an ion beam to the defect position, so that the substrate S constituent material can be cut at a predetermined area and a predetermined depth, and the substrate S constituent material causing the defect can be cut at the defect position on the substrate S. In this case, the gas supply part 700 may temporarily stop the supply of the source gas g onto the substrate S.
When the substrate S constituent material is cut, a new structure can be formed at the cut position of the substrate S constituent material as needed. For example, when the defect type is a foreign substance inflow, the operation of the particle beam emitting part 400 and the gas supply part 700 is controlled by the control part after the substrate S constituent material is cut, so that a new structure can be formed at a position where the substrate S constituent material is cut.
Hereinafter, a particle beam device according to a third embodiment of the present invention will be described.
Since a particle beam device according to a third embodiment of the present invention to be described below is similar in structure to the inspection device and the repair device of the first and second embodiments of the present invention described above, the description thereof will be simplified or omitted with respect to overlapping contents, and detailed description will be given centering on the content having differences.
Referring to fig. 1, a particle beam device according to a third embodiment of the present invention includes, as a particle beam device capable of inspecting and repairing an object to be processed in an atmosphere by a particle beam: a column part 200, the column part 200 and the support part 100 arranged in the atmosphere in a manner that the object to be processed can be placed are arranged opposite to each other, and the interior of the column part 200 can be controlled to be vacuum; an opening 300 formed in a portion of the pillar 200 facing the object to be processed so as to allow the particle beam to pass therethrough; a particle beam emitting part 400, the particle beam emitting part 400 being disposed inside the column part 200; a detecting part 600, the detecting part 600 being disposed between the particle beam emitting part 400 and the object to be processed so as to be able to detect a signal according to the electron beam; and a gas supply part 700, the gas supply part 700 having a function of being capable of injecting a source gas.
Further, the particle beam device may include: a vacuum forming part 500, the vacuum forming part 500 being connected to the pillar part 200; a control unit (not shown) for controlling the operations of the particle beam emitting unit 400 and the gas supply unit 700 according to whether the object is inspected or not and the defect type of the object; and an inspection unit (not shown) connected to the detection unit 600.
The object to be processed may be a substrate S. In order to inspect the substrate S, a particle beam may be incident to the substrate S to emit secondary particles and X-rays from the substrate S. In order to repair the substrate S, a particle beam may be incident on the substrate S to cut a material constituting the substrate S and form a structure made of a predetermined material on the substrate S. In this case, the intensity of the particle beam for inspecting the substrate S and the intensity of the particle beam for repairing the substrate S may be different. In the case of repairing the substrate S, the intensity of the particle beam for forming the structure and the intensity of the particle beam for cutting the substance constituting the substrate S may be different from each other.
The particle beam emitter 400 can emit at least one of an ion beam, an electron beam, an atomic beam, and a neutron beam to one surface of the substrate S through the opening 300. To this end, the particle beam emitting part 400 may include at least one or more particle beam sources 410 and a plurality of electron lenses 420. The particle beam source 410 may include at least any one of an ion beam source, an electron beam source, an atom beam source, and a neutron beam source. The type and structure of the electron lens 420 may be varied according to the type and number of the particle beam sources 410. The particle beam source 410 may be disposed on the pillar portion 200, and the plurality of electron lenses 420 may be disposed between the particle beam source 410 and the opening portion 300.
The detection part 600 may detect a signal of at least one of the secondary particles and the X-rays emitted from the substrate S after the particle beam is incident to the substrate S. The inspection unit (not shown) may receive the detection result of the detection unit 600 and inspect the substrate S for the presence or absence of a defect and the type of the defect. The inspection result may be transmitted to a control unit (not shown).
The gas supply part 700 may include: a gas supply pipe 710, the gas supply pipe 710 having a jet port formed at a distal end thereof; and a gas supply source 720, the gas supply source 720 being connected to the gas supply pipe 710 and storing a source in a powder state therein. The ejection ports may be located around the opening 300. The source is supplied to the gas supply pipe 710 together with the carrier gas after the inside of the gas supply source 720 is vaporized, and the source gas may be injected onto the substrate S through the injection port.
When the substrate S is inspected by the particle beam apparatus, the control unit (not shown) can position the column unit 200 in the inspection region by controlling the operation of at least one of the drive shaft and the shaft member, and can apply a bias voltage to the support unit 100 by controlling the operation of the bias power supply unit (not shown). Further, the control part may control the operation of the particle beam emitting part 400 so that the particle beam is incident on the substrate S within the inspection region. A signal emitted from the substrate S by incidence of the particle beam may be detected by the detection portion 600. The inspection section may receive the detection result from the detection section 600 to inspect the substrate S for the presence or absence of a defect and the type of the defect, and may transmit the result to the control section.
When the substrate S is repaired by the particle beam apparatus, the control unit (not shown) can position the column portion 200 in the repair region by controlling the operation of at least one of the drive shaft and the shaft member. When the defect of the substrate S is an open defect, the control part may form a deposition atmosphere on the repair region by controlling the operation of the gas supply part 700, and may irradiate a particle beam onto the substrate S within the repair region by controlling the particle beam emitting part 400, thereby forming a structure formed of the determined substance.
When the defect of the substrate S is a short circuit or a foreign material flow, the control part (not shown) may control the particle beam emitting part 400 to irradiate the particle beam onto the substrate S in the repair region, thereby cutting the substrate S constituent material. On the other hand, after the substrate S constituent material is cut, a new structure may be formed at the position where the substrate S constituent material is cut.
In this case, the repair of the substrate S may be performed subsequently after the inspection of the entire area of the substrate S is finished. Alternatively, if a defect is found in the process of inspecting the substrate S, the substrate S is repaired, and when the repair of the defect is finished, the inspection of the substrate S may be continued. During this series of operations, the control part may control the operation of the vacuum forming part 500 to maintain the degree of vacuum inside the pillar part 200 at a desired degree of vacuum.
Although the first, second, and third embodiments of the present invention have been described with reference to fig. 1, the present invention may be configured in various forms including the following modifications.
Fig. 2 is a schematic diagram of an inspection apparatus and a repair apparatus according to a first modification of the embodiment of the present invention. Fig. 3 is a schematic view of an inspection apparatus and a repair apparatus according to a second modification of the embodiment of the present invention. Fig. 4 is a schematic view of an inspection apparatus and a repair apparatus according to a third modification of the embodiment of the present invention. Fig. 5 is a schematic view of an inspection apparatus and a repair apparatus according to a fourth modification of the embodiment of the present invention.
Hereinafter, when a modification of the present invention is described, the modification will be described without distinguishing the embodiments without particularly distinguishing the first embodiment, the second embodiment, and the third embodiment of the present invention. Therefore, the inspection apparatus, the repair apparatus, and the particle beam apparatus are hereinafter collectively referred to as a processing apparatus. In addition, repetitive descriptions will be omitted, and features of the processing apparatus according to the modified example of the present invention, which are distinguished from the embodiment of the present invention, will be described in detail below.
Referring to fig. 2, the processing apparatus according to the first modification of the present invention may include a suction unit 800, and the suction unit 800 may suck and remove at least one of a reactant, a product, and an unreacted substance on a substrate S. The suction part 800 may include: a suction pipe 810, the suction pipe 810 having a suction port formed at a distal end thereof; and an exhaust pump 820, wherein the exhaust pump 820 is connected to the suction pipe 810.
In this case, the suction port of the suction pipe 810 may be positioned around the opening 300. Further, the suction port of the suction pipe 810 and the jet port of the gas supply part 700 may be spaced apart to both sides of the opening part 300. In this case, the suction port may extend obliquely with respect to one surface of the substrate S, and the inclination direction thereof may be a direction symmetrical to the inclination direction of the ejection port about an axis passing through the vertical direction of the opening 300.
When the suction pipe 810 is formed with a negative pressure of a predetermined magnitude by the exhaust pump 820, an air flow is formed from the ejection port to the suction port, and the reactant, the product, and the unreacted substance on the substrate S can be sucked into the suction port by the air flow. A foreign matter remover (not shown) is provided at a predetermined position of the suction pipe 810, thereby preventing the exhaust pump 820 from being damaged by foreign matters among the reactant, the product, and the unreacted product. Here, the reactant, the product, and the unreacted substance refer to various reactants, products, and unreacted substances generated or present on the substrate S by the irradiation of the particle beam. The suction portion 800 can keep the space between the substrate S and the opening 300 clean.
On the other hand, the magnitude of the negative pressure formed by the exhaust pump 820 may be a magnitude that can prevent or suppress the flow of the atmosphere gas g or the source gas g ejected onto the substrate S into the opening 300. This can be set to an appropriate value according to the size of the opening 300, the internal pressure of the pillar portion 200, and the injection angles and injection pressures of the atmosphere gas g and the source gas g.
Referring to fig. 3, the treating apparatus according to the second modification of the present invention may include a protrusion portion 910, the protrusion portion 910 being formed at a lower surface of the pillar portion 200 so as to be located between the opening portion 300 and the injection port of the gas supply portion 700.
The protrusion 910 may be formed to protrude downward from the lower surface of the pillar portion 200, and may extend along the periphery of the opening 300. The protrusion 910 functions as a dam (dam) that blocks the ambient gas g and the source gas g from immediately flowing into the opening part 300 along the lower surface of the pillar part 200. By such a protrusion 910, the atmosphere gas g and the source gas g can be smoothly injected onto the substrate S.
Referring to fig. 4, in the processing apparatus according to the third modification of the present invention, the particle beam emitting portion 400 may emit at least any one of the charged particle beam and the neutral particle beam to one surface of the substrate S through the opening portion 300.
That is, the particle beam emitting part 400 may include at least one charged particle beam source capable of emitting a charged particle beam and at least one neutral particle beam source capable of emitting a neutral particle beam, and at least one of the charged particle beam and the neutral particle beam may be selected to be emitted to one surface of the substrate S.
Alternatively, the particle beam emitting part 400 includes at least one ion beam source capable of emitting an ion beam and at least one neutral particle beam source capable of emitting a neutral particle beam, and at least any one of the ion beam and the neutral particle beam may be selected to be emitted to one surface of the substrate S.
Here, the charged particle beam source may include at least one of an ion beam source and an electron beam source, and the neutral particle beam source may include at least one of an atom beam source and a neutron beam source.
That is, the processing apparatus according to the third modification of the present invention may include a plurality of particle beam sources inside the pillar portion 200. Further, the processing apparatus may include a source replacement portion 920, the source replacement portion 920 being disposed inside the pillar portion 200 and supported in such a manner that the plurality of particle beam sources can be moved. The source replacement part 920 may be various structures such as a linear motor and an LM guide, for example. The structure of the source replacement part 920 may be various. The source replacement 920 may position a desired type of particle beam source on the electron lens 420. Its operation may be controlled by a control section.
Referring to fig. 5, the processing apparatus according to the fourth modification of the present invention may include second gas supply parts 930, 940, 950, 960, the second gas supply parts 930, 940, 950, 960 being connected to the gas supply part 700 so as to be able to inject the inert gas to the lower side of the opening part 300.
The second gas supply part may include: a second gas supply source 930, the second gas supply source 930 storing an inert gas therein; a second gas supply pipe 940, the second gas supply pipe 940 connecting the second gas supply source 930 to the gas supply pipe 710; a first valve 950, the first valve 950 being installed at the second gas supply pipe 940; and a second valve 960, the second valve 960 being installed at the gas supply pipe 710 between the second gas supply pipe 940 and the gas supply source 720.
In this case, for example, the second gas supply part and the gas supply part 700 may inject different types or the same type of inert gas g onto the substrate S.
Alternatively, the second gas supply part and the gas supply part 700 may selectively inject the inert gas and the source gas g onto the substrate S.
The operation of such a second gas supply portion and the gas supply portion 700 may be controlled by a control portion. In this case, the control part may select at least one of the second gas supply part and the gas supply part 700 to operate according to the type of the particle beam source to operate and the emission intensity of the particle beam.
The above-described embodiments of the present invention are intended to be illustrative of the present invention and are not intended to be limiting thereof. It should be noted that the configurations and modes disclosed in the above-described embodiments and modifications of the present invention may be combined and modified in various forms by being combined with or crossed with each other, and the modifications may be regarded as the scope of the present invention. That is, it is to be understood that the present invention will be embodied in various forms within the scope of the claims and the technical idea equivalent thereto, and that various embodiments can be implemented by those skilled in the art to which the present invention pertains within the technical idea of the present invention.
Claims (20)
1. An inspection apparatus capable of inspecting an object to be processed in an atmosphere by a particle beam, comprising:
a column part which is arranged opposite to a support part arranged in the atmosphere in a manner that the object to be processed can be placed, and the interior of which can be controlled to be vacuum;
an opening formed in a portion of the column portion facing the object to be processed so as to allow the particle beam to pass therethrough;
a particle beam emitting portion provided inside the column portion; and
a detection section provided between the particle beam emission section and the object to be processed so as to be able to detect a signal according to the electron beam.
2. The inspection apparatus according to claim 1,
the column part is arranged on the upper side of the support part,
the opening portion is formed so as to penetrate through a lower portion of the pillar portion,
the opening portion has a size of 10 micrometers or more and less than 1000 micrometers and surrounds a traveling path of the particle beam.
3. The inspection apparatus according to claim 1,
the particle beam emitting unit emits either a charged particle beam or a neutral particle beam to one surface of the object through the opening.
4. The inspection apparatus according to claim 1,
the particle beam emitting section includes:
at least one charged particle beam source capable of emitting a charged particle beam to one surface of the object to be processed through the opening; and
at least one neutral particle beam source capable of emitting a neutral particle beam to one surface of the object to be processed through the opening.
5. The inspection apparatus according to claim 1,
comprises a gas supply part having a function of being capable of ejecting an atmosphere gas for inspecting an object to be processed, the gas supply part being formed with an ejection port at a distal end thereof.
6. The inspection apparatus according to claim 5,
the gas supply portion includes:
a gas supply pipe formed with the injection port at a distal end thereof; and
a gas supply source connected to the gas supply pipe and storing an atmosphere gas therein,
the ejection opening extends obliquely downward from a periphery of the opening portion in a direction toward a center of the opening portion.
7. The inspection apparatus according to claim 5,
a protruding portion is included, which is formed below the pillar portion so as to be located between the ejection opening and the opening portion.
8. A repair device capable of repairing an object to be treated in the atmosphere by using a particle beam, comprising:
a column part which is arranged opposite to a support part arranged in the atmosphere in a manner that the object to be processed can be placed, and the interior of which can be controlled to be vacuum;
an opening formed in a portion of the column portion facing the object to be processed so as to allow the particle beam to pass therethrough;
a particle beam emitting portion provided inside the column portion; and
a gas supply portion having a function of being capable of injecting a source gas.
9. The repair apparatus of claim 8,
the column part is arranged on the upper side of the support part,
the opening portion is formed so as to penetrate through a lower portion of the pillar portion,
the opening portion has a size of 10 micrometers or more and less than 1000 micrometers and surrounds a traveling path of the particle beam.
10. The repair apparatus of claim 8,
the particle beam emitting portion emits either an ion beam or a neutral particle beam to one surface of the object through the opening.
11. The repair apparatus of claim 8,
the particle beam emitting section includes:
at least one ion beam source capable of emitting an ion beam to one surface of the object to be processed through the opening; and
at least one neutral particle beam source capable of emitting a neutral particle beam to one surface of the object to be processed through the opening.
12. The repair apparatus of claim 8,
the method comprises the following steps:
a control part which controls the operation of the particle beam emitting part and the gas supply part so as to cut the processed object or form a structure on the processed object according to the defect type of the processed object; and
a second gas supply part connected to the gas supply part so that an inert gas can be sprayed to a lower side of the opening part through the gas supply part.
13. The repair apparatus of claim 8,
the gas supply portion is formed with an injection port at a distal end.
14. The repair apparatus of claim 13,
the gas supply portion includes:
a gas supply pipe formed with the injection port at a distal end thereof; and
a gas supply source connected to the gas supply pipe and storing an atmosphere gas therein,
the ejection opening extends obliquely downward from a periphery of the opening portion in a direction toward a center of the opening portion.
15. The repair apparatus of claim 13,
comprises an intake part which can suck at least one of a reactant, a product and an unreacted substance on the object to be treated and remove the reactant, the product and the unreacted substance,
the suction part is provided with a suction port at the tail end, the suction port is positioned around the opening part, and the suction port and the jet port are spaced towards two sides of the opening part.
16. A particle beam device capable of inspecting and repairing an object to be processed in the atmosphere by a particle beam, comprising:
a column part which is arranged opposite to a support part arranged in the atmosphere in a manner that the object to be processed can be placed, and the interior of which can be controlled to be vacuum;
an opening formed in a portion of the column portion facing the object to be processed so as to allow the particle beam to pass therethrough;
a particle beam emitting portion provided inside the column portion;
a detection section provided between the particle beam emission section and an object to be processed so as to be able to detect a signal according to an electron beam; and
a gas supply portion having a function of being capable of injecting a source gas.
17. The particle beam device of claim 16,
the column part is arranged on the upper side of the support part,
the opening portion is formed so as to penetrate through a lower portion of the pillar portion,
the opening portion has a size of 10 micrometers or more and less than 1000 micrometers and surrounds a traveling path of the particle beam.
18. The particle beam device of claim 16,
the particle beam emitting unit emits at least one of an ion beam, an electron beam, an atomic beam, and a neutron beam to one surface of the object through the opening.
19. The particle beam device of claim 16,
the gas supply portion is formed with an injection port at a distal end.
20. The particle beam device of claim 16,
the apparatus comprises a control unit for controlling the operations of the particle beam emitting unit and the gas supply unit according to the inspection of the object and the defect type of the object.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2019-0100373 | 2019-08-16 | ||
| KR1020190100373A KR102181456B1 (en) | 2019-08-16 | 2019-08-16 | Inspecting apparatus, repairing apparatus and particle beam apparatus |
| PCT/KR2020/010706 WO2021033998A1 (en) | 2019-08-16 | 2020-08-13 | Inspection apparatus, repair apparatus, and particle beam apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114270471A true CN114270471A (en) | 2022-04-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080057948.4A Pending CN114270471A (en) | 2019-08-16 | 2020-08-13 | Inspection apparatus, repair apparatus, and particle beam apparatus |
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| Country | Link |
|---|---|
| KR (1) | KR102181456B1 (en) |
| CN (1) | CN114270471A (en) |
| WO (1) | WO2021033998A1 (en) |
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| EP3417474A1 (en) * | 2016-02-19 | 2018-12-26 | Luxembourg Institute of Science and Technology (LIST) | Extraction system for charged secondary particles for use in a mass spectrometer or other charged particle device |
| CN107818904A (en) * | 2016-09-13 | 2018-03-20 | 日本株式会社日立高新技术科学 | Compound beam apparatus |
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| Publication number | Publication date |
|---|---|
| WO2021033998A1 (en) | 2021-02-25 |
| KR102181456B1 (en) | 2020-11-23 |
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