KR101765244B1 - Deposition apparatus and method - Google Patents

Deposition apparatus and method Download PDF

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Publication number
KR101765244B1
KR101765244B1 KR1020150178600A KR20150178600A KR101765244B1 KR 101765244 B1 KR101765244 B1 KR 101765244B1 KR 1020150178600 A KR1020150178600 A KR 1020150178600A KR 20150178600 A KR20150178600 A KR 20150178600A KR 101765244 B1 KR101765244 B1 KR 101765244B1
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South Korea
Prior art keywords
temperature
source
supply line
gas
processing space
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KR1020150178600A
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Korean (ko)
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KR20170070947A (en
Inventor
이진우
박종수
허병순
하도균
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참엔지니어링(주)
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Priority to KR1020150178600A priority Critical patent/KR101765244B1/en
Priority to JP2016025526A priority patent/JP6194034B2/en
Priority to TW106120964A priority patent/TWI634232B/en
Priority to TW105104679A priority patent/TWI604085B/en
Priority to CN201610959641.9A priority patent/CN107012446B/en
Publication of KR20170070947A publication Critical patent/KR20170070947A/en
Application granted granted Critical
Publication of KR101765244B1 publication Critical patent/KR101765244B1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers

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  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

The present invention relates to an apparatus for depositing a film on a processing object supported in the atmosphere, comprising: a chamber part which is located in the atmosphere and in which a processing hole is formed on a surface facing the processing object and which provides a processing space with the processing object; A source supply line extending into the interior of the chamber portion and having an outlet portion formed in the inner circumferential surface of the process hole, a temperature elevation gas supply line extending into the chamber portion and an outlet portion located around the end of the process hole on one side of the chamber portion A deposition apparatus capable of preventing the source dust from flowing out of the processing space while depositing a film on a processed product by chemical vapor deposition and improving the deposition efficiency of the film and a deposition method applied thereto are presented do.

Description

[0001] Deposition apparatus and method [0002]

The present invention relates to a deposition apparatus and method, and more particularly, to a deposition apparatus and a deposition method that prevent source dust from flowing out of a processing space during a process of depositing a film on a processed material by chemical vapor deposition, And more particularly, to a deposition apparatus and a deposition method capable of improving deposition.

Various display devices include an electronic circuit formed on a substrate. The conductive lines of these electronic circuits may cause defects such as disconnection or short circuit during or after manufacture of the circuit. For example, during the process of manufacturing various display devices including an LCD (Liquid Crystal Display), an OLED (Organic Light Emitting Display), or an LED (Light Emitting Display), electrodes or wirings Signal lines and the like may be partially disconnected to cause an open defect.

Therefore, during the process of manufacturing various display devices, a repair process for repairing an open defect is performed. Such a repair process is carried out in the atmosphere, for example, by a chemical vapor deposition type repair apparatus.

For example, an open defect of the substrate is repaired by a series of processes in which a substrate is provided in the atmosphere, an atmosphere of a metal source is formed at a defect position of the substrate, and a laser is irradiated to the defect position of the substrate to deposit the film.

At this time, in order to deposit a metal source film at a defective position of the substrate to form a clean state, the temperature of the defect position of the substrate must be maintained within the deposition temperature range of the metal source. However, in the conventional repair device structure, it is difficult to maintain the temperature of the defect position of the substrate in the deposition temperature range of the metal source during the deposition of the metal source film at the defect position of the substrate.

On the other hand, an air curtain is sprayed to the lower side of the repair device so as to cover the defective position of the substrate in order to prevent the dust of the metal source from flowing out into the atmosphere while repairing the open defect of the substrate in the atmosphere. However, in the conventional repair device structure, it is difficult to prevent the dust of the metal source from flowing out into the atmosphere. Further, there is a problem that the temperature near the defective position of the substrate is lowered by the air curtain.

Further, the source supply line for transporting the metal source while repairing the open defect of the substrate in the atmosphere is connected in a bent structure between the straight pipe portion and the straight pipe portion. In such a structure, there is a problem that the metal source passing through the source supply line comes into contact with the source supply line at a relatively large area at the bent portion and the temperature is lowered. In addition, since a part of the metal source is peeled off from the bent portion to form a vortex, there is a problem that the effective flow area in the bent portion becomes narrow, and the metal source remains in the bent portion due to vortex.

KR 10-0909959 B1

The present invention provides a deposition apparatus and method capable of easily controlling the defect position temperature of a processed product during deposition of a film on a treatment product in the air.

The present invention provides a deposition apparatus and a method capable of preventing source dust from flowing out of a processing space while depositing a film on a treatment product in the atmosphere.

The present invention provides a deposition apparatus and method capable of improving the deposition efficiency of a film when depositing a film on a treatment object in the atmosphere.

The present invention provides a deposition apparatus capable of securing an effective flow area of a source.

A deposition apparatus according to an embodiment of the present invention is an apparatus for depositing a film on a processing object supported in the atmosphere, wherein the processing hole is formed on one surface of the substrate facing the processing object, A chamber part for supplying a gas; A source supply line extending into the chamber portion and having an outlet formed in an inner peripheral surface of the processing hole; And a temperature elevation gas supply line extending into the interior of the chamber portion, the outlet portion being located on one side of the chamber portion and around the end of the processing hole.

And an exhaust line extending into the interior of the chamber portion, wherein an inlet portion is located at an outer periphery of the outlet portion of the temperature elevating gas supply line on one side of the chamber portion.

The source supply line may include a plurality of straight pipe portions and at least one connecting portion connecting the straight pipe portions, and the connecting portion may have a curved structure.

And a heater portion formed to surround at least a part of the source supply line.

The source supply line material may comprise copper

A laser part formed to be capable of irradiating laser to the processing space; A source supply connected to the source supply line; A temperature elevation gas supply unit connected to the temperature elevation gas supply line; And an exhaust unit connected to the exhaust line.

A deposition method according to an embodiment of the present invention is a method of depositing a film on a processing object supported in the atmosphere, comprising: preparing a processing object in the air; Controlling the temperature by injecting a temperature-elevated gas to the treated space side of the processed product; Spraying a source into the processing space of the processed material; And irradiating a laser on one side of the processed product to form a film.

The step of injecting the temperature-elevated gas to the treated space side of the treated object may include injecting a heated gas to the treated space side so as to surround the outside of the treated space to isolate the treated space from the outside air.

The temperature-elevating gas may include an inert gas, and the temperature-elevating gas may be heated to a temperature ranging from 20 ° C to 40 ° C and injected into the processing space.

The step of injecting the source into the processing space of the processed object may include the step of controlling the temperature of the source by applying heat to at least a partial region of the source supply line through which the source is transferred.

The source may be heated to a temperature range of 20 ° C to 40 ° C and injected into the process space.

A process of spraying a heated gas to the treated space side of the treated material and a process of injecting the source into the treated space of the treated material may be performed.

And exhausting at least one of reactants, products, and unreacted materials outside the processing space.

The source may comprise a cobalt source.

According to the embodiment of the present invention, it is possible to easily control the defect position temperature of the processed material during deposition of the film in the atmosphere, and effectively prevent the source dust from flowing out of the processing space. From this, the deposition efficiency of the film can be improved, and the outside of the apparatus can be prevented from being contaminated with the source dust.

For example, when applied to an apparatus for repairing open defects formed on one surface of a substrate during or after manufacture of various display devices by a chemical vapor deposition (CVD) method, a film is deposited on open defects formed on one surface of the substrate, Temperature gas can be injected to the periphery. From this, it is possible to easily control the temperature in the vicinity of the open defect to the temperature range corresponding to the deposition temperature range of the metal source. That is, a film in a clean state can be deposited on an open defect formed on one surface of the substrate.

Further, since the temperature-rising gas can be injected so as to surround the open defect in the form of an air curtain, it is possible to effectively prevent the dust of the metal source from flowing out into the atmosphere. At this time, since the temperature-rising gas is directly injected so as to directly surround the processing space provided at the position of the open defect, various foreign substances such as dust of the metal source generated in the processing space are introduced to the inlet portion of the exhaust line, Can be effectively prevented. That is, it is possible to prevent the outside of the apparatus from being contaminated with the metal source dust.

In addition, according to the embodiment of the present invention, the structure of the connection between the straight pipe portion and the straight pipe portion of the source supply line for transporting the metal source to the open defect position of the substrate is improved to a curved structure to transport the metal source to the open defect position of the substrate The temperature of the metal source can be prevented from dropping, the effective flow area of the metal source can be ensured, and the metal source can be prevented from remaining in the connection portion of the source supply line.

1 is a view for explaining a deposition apparatus according to an embodiment of the present invention.
2 is a view for explaining a source supply line according to an embodiment of the present invention.
3 is a view for explaining a source supply line according to a comparative example of the present invention.
4 is a view for explaining a chamber part according to an embodiment of the present invention.
5 is a view for explaining one side of a chamber part according to an embodiment of the present invention.
6 is a view for explaining an internal structure of a chamber part according to an embodiment of the present invention.
7 is a view for explaining a planar structure and a cross-sectional structure of an outlet of a temperature-rising gas supply line in the vicinity of a processing hole according to an embodiment and a modification of the present invention;
8 and 9 are views for explaining the operation of the chamber part according to the embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described below, but may be embodied in various forms. It is to be understood that both the foregoing general description and the following detailed description of the present invention are exemplary and explanatory and are intended to provide further explanation of the invention as claimed. In the meantime, the drawings may be exaggerated to illustrate embodiments of the present invention, wherein like reference numerals refer to like elements throughout.

1 is a block diagram showing a deposition apparatus according to an embodiment of the present invention. FIG. 2 is a schematic view showing a connection structure of a source supply line according to an embodiment of the present invention, and FIG. 3 is a schematic diagram showing a connection portion of a source supply line according to a comparative example of the present invention.

FIG. 5 is a schematic view showing one side of a chamber part according to an embodiment of the present invention, and FIG. 6 is a cross-sectional view of a chamber according to an embodiment of the present invention. Fig. 7 and 8 are a schematic view showing a planar structure and a cross-sectional structure of the outlet of the heating gas supply line in the vicinity of the processing hole according to the embodiment and the modification of the present invention, And Fig.

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an apparatus for depositing a film on a processed article supported in the atmosphere, and an embodiment of the present invention will be described below based on a chemical vapor deposition (CVD) repair apparatus.

1, a deposition apparatus according to an embodiment of the present invention includes a support unit 100, a chamber unit 200, a source supply unit 300, a first gas supply unit, a second gas supply unit, an exhaust unit, a laser unit 810 And an optical portion 820. [

The source supply 300 includes a first source supply 310, a second source supply 320, a carrier gas supply 330, a first carrier gas supply line 341, a second carrier gas supply line 342, 3 carrier gas supply line 343, a first valve 342a, a second valve 343a and a source supply line.

The source supply line may include a first source supply line 344, a second source supply line 345, a third source supply line 346, a third valve 344a and a fourth valve 345a. have.

The first gas supply may include a first gas supply 410 and a first gas supply line 420 and the second gas supply may include a second gas supply 510 and a second gas supply line . Here, the second gas supply unit 510 may be a temperature-elevated gas supply unit, and the second gas supply line may be a temperature-elevated gas supply line 520.

The processed material S may be a substrate on which various electronic devices are formed on one surface, or a substrate on which processes for manufacturing these electronic devices are in progress or the process is completed. For example, the processed material S may be a glass substrate on which a gate line, a data line, a pixel, and a thin film transistor are formed on one surface. The treated material S may be supported in the support portion 100 and provided in the atmosphere.

The source may comprise a metal source, and in particular may comprise a cobalt source. The cobalt source has better conductivity than the tungsten source and has a small molecular size and is well-deposited on the substrate.

The supporting portion 100 may be an integral plate-type stage glass or a bar-type stage glass of split type formed so as to be capable of supporting the processed material S on one side, for example, the upper surface. The supporting part 100 may be provided with an aligning part (not shown) so as to align the processing object S in at least one of x-axis direction and y-axis direction. Further, the supporting portion 100 may be provided with a lift pin (not shown) and a vacuum chuck (not shown) so as to support the processing object S in the z-axis direction.

The support 100 may be mounted on the upper surface of a table (not shown) and fixed in position. Alternatively, the support portion 100 may be installed on the table so as to be movable in at least one of the x-axis direction, the y-axis direction, and the z-axis direction.

A mounting portion (not shown) may be installed on the upper surface of the table so as to be movable in at least one of x-axis direction, y-axis direction, and z-axis direction. Alternatively, a mounting portion may be provided on the upper surface of the table to fix the position.

For example, when the support portion 100 is installed on the upper surface of the table and is fixed in position, the mounting portion can be installed movably on the upper surface of the table. On the other hand, if the supporting portion 100 is provided so as to be movable on the upper surface of the table, the mounting portion may be installed on the upper surface of the table and fixed in position. In addition, the support portion 100 and the mounting portion can be installed on the table in various ways that are movable relative to each other.

The mounting portion serves to movably support the chamber portion 200, the laser portion 810, and the optical portion 820, and may be spaced apart from the upper portion of the support portion 100. For example, Can be applied.

In the present invention, the configuration and the manner of the table, the alignment section, the lift pin, the vacuum chuck, and the mounting section need not be limited to a particular configuration and method. In order to avoid obscuring the gist of the present invention, detailed description of these constituent parts will be omitted below.

1 and 4 to 6, the chamber part 200 may be spaced above the support part 100 and may be disposed in the atmosphere. At this time, the chamber part 200 may be mounted on a mounting part (not shown) and movably supported in the x-axis direction, the y-axis direction, and the z-axis direction. A processing hole 230 may be formed on one surface 211 of the chamber portion facing the processing object S. [

The chamber part 200 provides a predetermined processing space 10 between the chamber part 200 and the processing object S using the processing hole 230. [ At this time, the processing space 10 is a space formed below the processing hole 230 between the chamber part 200 and the processing object S, or a space formed below the processing hole 230, As shown in FIG.

The chamber part 200 may be formed by stacking a plurality of plates in the z-axis direction. The chamber part 200 may include a chamber body 210 and a connection part 220. The lower surface of the chamber part 200, for example, one surface 211, may include the lower surface of the chamber body 210 and the lower surface of the connection part 220, The upper surface of the chamber portion 200 such as the other surface 212 may include the upper surface of the chamber body 210 and the upper surface of the connection portion 220 and may face the optical portion 520.

The size and shape of the chamber body 210 are not particularly limited and may be, for example, a disk shape having a predetermined width in the x-axis direction and the y-axis direction and a predetermined thickness in the z-axis direction. The chamber body 210 serves to provide a processing space 10 between the processing object S and the processing object S. The end of the processing hole 230 may be positioned at the center of the one surface of the chamber body 210 and the temperature rising gas spraying surface 261 may be formed by surrounding the outer side of the processing hole 230 in an annular shape, The first exhaust surface 262 can be formed by wrapping around the outside of the temperature rising gas spraying surface 261 and the second exhaust surface 263 can be formed around the first exhaust surface 262 in a ring shape .

The connection part 220 may be provided to surround one side of the side surface of the chamber body 210. The size and shape of the connection portion 220 are not particularly limited and may be, for example, a rectangular plate shape having a predetermined width in the x-axis direction and the y-axis direction and a predetermined thickness in the z-axis direction. The connection portion 220 can be supported by the mounting portion. The connection part 220 serves to structurally support the chamber body 210, the source supply line, and the like. At least one source supply hole 251 may be formed on the other surface of the connection part 220 and a first gas supply hole 252a and a second gas supply hole 252b may be formed, 253a and a second exhaust hole 253b may be formed.

A heating member (not shown) may be provided in at least one of the chamber body 210 and the connection portion 220. The heating element may be connected to the third source supply line 346 and may adjust the temperature of the source flowing inside the third source supply line 346.

In addition, a heat terminal member (not shown) may be provided inside the chamber body 210 and the connection portion 220. At this time, the heat shield member may be provided so as to surround at least the outside of the heating member. It is possible to suppress or prevent the heat of the heating member from being transmitted to the upper and lower surfaces of the chamber part 200 by the heat block member.

The processing hole 230 may be formed through the central portion of the chamber body 210 in the z-axis direction. The processing holes 230 may be opened from one side of the chamber body 210 downward and connected to the upper portion of the processing space 10. The source can be introduced into the processing space 10 through the end of the processing hole 230. The processing hole 230 may be formed so that the inner diameter of the processing hole 230 is narrowed in the direction toward the one surface from the other surface of the chamber body 210, and may be a shape of the rotating body. The lower region of the processing hole 230 may be provided as a direct portion, and the upper region may be provided as an extension portion.

The linear portion may extend through the one side of the chamber body 210 in the height direction, for example, the z axis direction, and may extend into the chamber body 210 and may be connected to the upper portion of the processing space 10. The direct-acting portion may have the same inner diameter in the z-axis direction. And the outlet portion 348 of the third source supply line 346 may be positioned on the inner peripheral surface of the direct portion 230A.

The extension part may be formed by penetrating the interior of the chamber body 210 in a height direction at an upper part of the direct part. The expanding portion may have a structure in which the inner diameter increases toward the upper side.

A window 240 may be mounted on the upper end of the extension of the processing hole 230. The window 240 may be formed of a material through which the laser passes, such as a quartz material. A ring-shaped window holder 241 may be mounted on the upper edge of the window 240. At this time, a sealing member 242 may be provided between the window 240 and the window holder 241.

1 to 3, 5 and 6, the source supply 300 may be located outside the chamber part 200, and a part of the source supply 300 may extend into the interior of the chamber part 200, . At least one source supplier 300 may be provided.

The source supply 300 includes a first source supply 310, a second source supply 320, a carrier gas supply 330, a first carrier gas supply line 341, a second carrier gas supply line 342, 3 carrier gas supply line 343, a first valve 342a, a second valve 343a and a source supply line. The source supply line may include a first source supply line 344, a second source supply line 345, a third source supply line 346, a third valve 344a and a fourth valve 345a. have.

The source supply unit 300 may further include a plurality of source supply lines in addition to the first source supply unit 310 and the second source supply unit 320, .

The first source supply unit 310 may be a canister or a bubble generator in which powder of the metal source can be stored. The first source supply 310 may be coupled to the first source supply line 344. The first source supply unit 310 serves to vaporize and supply the metal source to the first source supply line 344. The first source supply part 310 may be provided with a heating wire (not shown), for example, a heating wire, and the heating wire may heat a metal source filled in the first source supply part 310, It can be converted from a solid state to a gaseous state.

The second source supply part 320 may be a predetermined canister or a bubbler in which the powder of the metal source can be stored. At this time, a metal source having the same component and physical properties as those of the metal source stored in the first source supply unit 310 may be filled in the second source supply unit 310, and the metal source may be stored in the first source supply unit 310 A metal source of a metal source and other components and properties can be charged. The second source supply 320 may be connected to the second source supply line 345. The second source supply part 320 serves to vaporize and supply the metal source to the second source supply line 345. The second source supply unit 320 may be provided with heating means (not shown), for example, a heating wire, and the heating wire may heat the metal source, which is filled in the second source supply unit 320, It can be converted from a solid state to a gaseous state.

The carrier gas supply unit 330 may include a predetermined pressure vessel (canister) in which the carrier gas may be stored. At least one inert gas such as argon gas may be provided as a carrier gas in the carrier gas supply unit 330.

The first carrier gas supply line 341 may have one end connected to the carrier gas supply unit 330 and the other end extended in the direction toward the first source supply unit 310 and the second source supply unit 320. The second carrier gas supply line 342 may be mounted to connect the other end of the first carrier gas supply line 341 and the first source supply 310. [ The third carrier gas supply line 343 may be mounted to connect the other end of the first carrier gas supply line 341 and the second source supply 320. A first valve 342a may be mounted on the second carrier gas supply line 342 and a second valve 343a may be mounted on the third carrier gas supply line 343. [ The first valve 342a and the second valve 343a may each be provided with a flow controller.

The carrier gas supply unit 330 may supply the carrier gas to the first source supply unit 310 and the second source supply unit 320 and may supply the carrier gas to the first source supply unit 310 and the second source supply unit 320, To the processing hole 230 side. The metal source may be carried into the source supply line by the carrier gas.

The source supply line serves to transport the metal source into the processing hole 230. One side of the source supply line may be connected to the first source supply unit 310 and the second source supply unit 320 and the other side may extend into the chamber unit 200 through the source supply hole 251. The outlet of the source supply line may be formed on the inner circumferential surface of the processing hole 230.

The first source supply line 344 and the second source supply line 345 are branching bases having a third source supply line 346 as a main pipe, each one end of which can be joined at one point, And may be connected to the first source supply unit 310 and the second source supply unit 320, respectively.

The third source supply line 346 may have an inlet portion connected to the merging portion of the first source supply line 344 and the second source supply line 345 and extends to the interior of the chamber portion 200, (348) may be formed on the inner peripheral surface of the processing hole (230).

The first source supply line 344, the second source supply line 345 and the third source supply line 346 may each include a plurality of straight pipe portions and include at least one connecting portion connecting the plurality of straight pipe portions . At this time, the connection portion may include a bending portion formed in a bending structure having a predetermined radius of curvature (R).

2 is a schematic diagram showing an enlarged view of a portion A in Fig. Referring to FIG. 2, in the embodiment of the present invention, by connecting each straight pipe portion of each of the source supply lines extending in the directions intersecting each other to the bend portion, the effective flow area of the metal source is extended It can be kept constant along the direction. Thus, a metal source can be transported inside each source supply line, forming a constant stream in steady flow as shown in the figure.

In addition, the degree of change in the area of the inner circumference and the outer circumference of the bending portion at each position spaced apart in the direction in which the bending portion extends is small in the bending portion connecting between the respective bending portions. The area of the inner periphery and the outer periphery of the bend section at each position spaced apart in the direction in which the bend section extends may be the same as or similar to the area of the inner periphery and the outer periphery at an arbitrary position of the straight pipe section. This means that the difference between the heat loss rate of the metal source passing through the straight pipe section and the heat loss rate of the metal source passing through the bending section is weak. Therefore, the temperatures (T1, T2, T3, T1 ', T2', T3 ') of the metal source at the respective positions spaced apart in the direction in which the bend section extends can be the same or within the tolerance range.

FIG. 3 is a schematic diagram showing a conventional connection structure corresponding to part A of FIG. 1 as a comparative example of the present invention. Referring to FIG. 3, in the comparative example of the present invention, between each straight pipe portion provided in each source supply line and extending in a direction intersecting each other is connected by a bent portion having a structure of discontinuous bent at a predetermined angle, for example, 90 degrees. Therefore, the flow area of the metal source in the bending portion of each source supply line is abruptly changed. Particularly, as shown in the drawing, in the bent portion, flow separation occurs and at least one vortex is generated, so that the flow area of the metal source changes irregularly. On the other hand, when a vortex is generated in the bent portion, not only the flow characteristics of the metal source are changed irregularly, but a part of the metal source remains in the bending portion and can be attached.

In addition, the degree of change in the area of the inner circumference and the outer circumference of the bending portion is relatively large at the respective positions where the bending portions connecting between the straight pipe portions are spaced apart in the direction in which the bending portions are extended. This means that the heat loss rate of the metal source passing through the crevice is larger than the heat loss rate of the metal source passing through the straight pipe section. Therefore, the temperature T5, T5 'of the folded position of the bent portion in the temperature T4, T5, T6, T4', T5 ', T6' of the metal source at each position spaced apart in the direction in which the bent portion extends Becomes lower than the temperatures T4, T6, T4 'and T6' of the remaining positions.

That is, in the embodiment of the present invention, since the connecting portions between the straight pipe portions are formed in a curved structure, the temperature of the metal source flowing through each of the source supply lines can be prevented from being lowered and an effective flow area can be ensured. In contrast, in the comparative example of the present invention, since the connection portion between each straight pipe portion is formed in a bent structure, the temperature of the metal source flowing through each source supply line may be lowered and the flow characteristics of the metal source may be irregularly changed.

The source supply 300 may further include a heater portion 350 configured to enclose at least a portion of the first source supply line 344, the second source supply line 345 and the third source supply line 346 have.

The heater unit 350 may include a predetermined heater, such as an STL heater. The STL heater may be mounted so as to surround the outer circumferential surface of each source supply line, for example, in the form of a coil, and the temperature of the metal source passing through each source supply line and supplied to the processing hole 230 side of the chamber section 200 may be, Deg.] C to 40 [deg.] C or 30 [deg.] C to 35 [deg.] C. Thus, in the embodiment of the present invention, the metal source can be smoothly supplied into the processing hole 230 while maintaining the vaporized state.

The first source supply line 344, the second source supply line 345 and the third source supply line 346 may have a thermal conduction efficiency higher than that of a SUS material, for example, in order to increase the heat transfer efficiency of the heater unit 350. [ Can be formed of a good copper material.

The third valve 344a and the fourth valve 345a may be mounted respectively on the first source supply line 344 and the second source supply line 345 and the third valve 344a and the fourth valve 345a Respectively, may be provided with a flow controller (not shown).

Referring to FIGS. 4 to 6, the third source supply line 346 may be provided with a source supply chamber 347. The source supply chamber 347 may be provided at one side of the third source supply line 346 close to the processing hole 230 and may surround the processing hole 230 inside the chamber body 210 to form, As shown in FIG. The third source supply line 346 may be connected to the source supply chamber 347 within the chamber body 210. The outlet 348 of the third source supply line may be formed by connecting between the source supply chamber 347 and the processing hole 230.

The outlet portion 348 of the third source supply line is located at a plurality of positions spaced along the periphery of the source supply chamber 347 such that the center of the chamber body 210 faces the central position of the end of the processing hole 230 at three positions, And extend downwardly inclinedly. The outlet portion 348 of the third source supply line can be opened at a plurality of positions on the inner circumferential surface of the processing hole 230, for example, three positions.

Referring to FIGS. 1 and 4 to 6, a first gas supply unit is provided to supply a purge gas for window to an extended portion of the process hole 230, and includes a first gas supply unit 410 and a first gas supply unit And a supply line 420.

The first gas supply part 410 may include a predetermined pressure vessel (canister) in which a purge gas such as nitrogen gas or argon gas is stored. The first gas supply unit 410 may include a flow controller (not shown) and a control valve (not shown).

The first gas supply line 420 may be connected to the first gas supply unit 410 at one side and may extend into the chamber unit 200 through the first gas supply hole 252a at the other side. The first gas supply line 420 may include a first gas supply chamber 421.

The first gas supply chamber 421 may be provided at a predetermined position on the other side of the first gas supply line 420 near the extension of the processing hole 230 and may be disposed at a predetermined position on the other side of the processing hole 230 For example, in a ring shape. The first gas supply line 420 may be connected to the first gas supply chamber 421 inside the chamber body 210. The outlet portion 422 of the first gas supply line may be formed to penetrate the chamber body 210 to connect the first gas supply chamber 421 and the extension portion of the processing hole 230.

The outlet portion 422 of the first gas supply line is connected to the chamber body 210 so as to face the center position of the extension portion of the processing hole 230 at a plurality of positions spaced apart along the circumference of the first gas supply chamber 421, And extend downwardly inclinedly. The outlet portion 422 of the first gas supply line can be opened at a plurality of positions on the inner circumferential surface of the expansion portion of the processing hole 230. [

It is possible to prevent the film of the metal source from being deposited on the lower surface of the window 240 by the purge gas supplied to the extension of the processing hole 230 in the first gas supply line 420, Even if a film of a metal source is deposited on the substrate, it can be immediately removed by the injection pressure of the purge gas. As a result, the lower surface of the window 240 can be maintained in a clean state, so that the laser can smoothly pass through the window 240 and be stably irradiated onto the processed material.

Referring to FIGS. 1 and 4 to 6, the second gas supply unit may be formed by injecting a heated gas into the space between the chamber body 210 and the processing object S by surrounding the processing space 10, for example, in the form of an air curtain. And may include a first gas supply unit 510, such as a temperature elevation gas supply unit, and a temperature elevation gas supply line 520, for example. At this time, the temperature-elevating gas supply line 520 may be covered with a heat insulating material so as to allow external heat insulation, or a heater or the like may be attached to the outer circumferential surface so that temperature can be controlled.

The second gas supply unit 510 may include a canister in which a temperature-elevated gas is stored. At this time, the temperature elevating gas may include an inert gas such as nitrogen gas or argon gas, and the temperature may be an inert gas controlled to a desired temperature elevating temperature. At this time, the temperature rise temperature of the temperature-rising gas may be a temperature range corresponding to the deposition temperature or the vaporization temperature of the metal source. In the embodiment of the present invention, for example, a temperature range of 20 to 40 ° C or a temperature range of 30 to 35 ° C And the temperature rise temperature of the temperature rising gas.

The second gas supply unit 510 may include a heat exchanger (not shown) or an electrothermal heater (not shown) as temperature control means for controlling the temperature of the temperature-rising gas. A control unit (not shown) may be connected. The second gas supply unit 510 may further include a flow controller (not shown) and a control valve (not shown).

The temperature-elevated gas supply line 520 may be connected to the second gas supply part 510 at one side and may extend into the chamber part 200 through the second gas supply hole 252b at the other side.

The temperature-elevated gas supply line 520 may include a second gas supply chamber 521. The second gas supply chamber 521 may be provided at a predetermined position on the other side of the temperature rising gas supply line 520 near the processing hole 230 and may be wound around the processing hole 230 inside the chamber body 210 And may be formed in an annular shape. The temperature-elevated gas supply line 520 may be connected to the second gas supply chamber 521 inside the chamber body 210. The outlet 522 of the temperature-raising gas supply line may be formed to penetrate the chamber body 210 to connect the second gas supply chamber 521 and the temperature raising gas spraying surface 261.

The outlet 522 of the heating gas supply line extends through the chamber body 210 in a direction toward one side of the chamber body 210 at a plurality of positions spaced apart from each other in the circumferential direction of the second gas supply chamber 521 And can be opened downward at a plurality of positions spaced apart from each other along the circumference of the temperature rising gas spraying plane 261. The outlet 522 of the temperature-raising gas supply line may be located adjacent to and around the end of the processing hole 230 on one side of the chamber body 210. At this time, the outlet portion 522 of the temperature-rising gas supply line may be formed to extend downward at a predetermined angle so as to face the processing hole 230 side.

Temperature gas supplied from the temperature-rising gas supply line 520 to the temperature-rising gas spraying surface 261 can be injected into the processing object S while surrounding the processing space 10 in the form of an air curtain, It is possible to easily control the temperature of the film deposition position of the substrate 10 and the processed product contacting the film 10 to a temperature corresponding to the deposition temperature range of the metal source. In addition, it is possible to effectively prevent the dust of the metal source from flowing out into the atmosphere by the heated gas. That is, since the temperature-rising gas is injected so as to directly surround the processing space 10, various kinds of foreign substances such as dust of the metal source generated in the processing space 10 are introduced to the inlet portion of the exhaust line to be described later, Can be effectively prevented.

As described above, in the embodiment of the present invention, it is possible to simultaneously raise the temperature of the treated product and prevent the dust from leaking from the process space by using the temperature-elevated gas supply line 520.

Meanwhile, the temperature raising gas supply line 520 according to the embodiment of the present invention may be variously configured as follows. Hereinafter, a temperature raising gas supply line according to a modification of the present invention will be described with reference to FIGS. 5 and 7. FIG.

Since the temperature raising gas supply line according to the modified embodiment of the present invention is somewhat similar in configuration to the temperature raising gas supply line 520 according to the embodiment of the present invention, Temperature gas supply line according to a comparative example of FIG.

FIG. 7A is a schematic view showing a planar structure of an outlet portion 522 of a temperature-rising gas supply line according to an embodiment of the present invention, which is an enlarged view of portion B of FIG. 7B is a schematic view showing the planar structure of the outlet portion 522a of the temperature-rising gas supply line according to the modification of the present invention corresponding to portion B of Fig. 7C is a schematic view showing a cross-sectional structure of the outlet portion 522a of the temperature-elevating gas supply line according to a modification of the present invention by cutting the portion C-C 'in FIG. 7B. FIG. 7 (d) is a schematic view showing the planar structure of the outlet portion 522b of the temperature-elevating gas supply line according to another modification of the present invention corresponding to portion B of FIG.

7 (a), 7 (b) and 7 (c), in the modified embodiment of the present invention, the outlet 522a of the temperature-rising gas supply line is directly opened . In this case, the gap d between the respective outlet portions can be adjusted, so that even in the case of a simple structure having no temperature raising gas spraying surface, the temperature raising gas can be injected while being surrounded by the outside of the processing space, So that the effect can be further increased.

7A and 7D, in another modification of the present invention, the outlet portion 522b of the temperature-elevating gas supply line is formed into a ring shape continuously surrounding the end portion of the processing hole 230 . Thus, the outlet 522b of the temperature-rising gas supply line may extend in the circumferential direction of the temperature-raising gas spray surface 261 outside the end of the treatment hole 230 and open in a ring shape. Thus, the temperature rising gas can be injected so as to surround the lower end of the processing hole 230 more airtightly.

The exhaust unit may include a first exhaust unit 610, a first exhaust line 620, a second exhaust unit 710, and a second exhaust line 720. The exhaust unit may suck and remove at least one of reactants, products, and unreacted materials generated inside the processing space 10 outside the injection region of the temperature-elevated gas injected in the form of an air curtain. At this time, by using the injection pressure of the temperature-elevated gas, each substance can be absorbed and removed more effectively.

In an embodiment of the present invention, an exhaust unit including both the first exhaust unit 610, the first exhaust line 620, the second exhaust unit 710, and the second exhaust line 720 is illustrated, The unit may be configured to include only the first exhaust portion 610 and the first exhaust line 620 or may be configured to include only the second exhaust portion 710 and the second exhaust line 720. [

The first exhaust portion 610 and the second exhaust portion 710 may include a pump or a vacuum pump, respectively. A first exhaust line 620 may be connected to the first exhaust portion 610 and a second exhaust line 720 may be connected to the second exhaust portion 620.

The first exhaust line 620 may extend through the first exhaust hole 253a into the interior of the chamber portion 200 and the inlet portion 622 may be formed on one face 211 of the chamber portion with a temperature- As shown in Fig. The second exhaust line 720 may extend into the interior of the chamber portion 200 through the second exhaust hole 253b and the inlet portion 722 may extend from one surface 211 of the chamber portion to the first exhaust surface 262 As shown in Fig.

The first exhaust line 620 and the second exhaust line 720 process the heated gas after the formation of the various curtains and air curtains generated inside the processing space 10 while the film is being deposited on the processed object S And can be removed by exhausting from the space 10.

The first exhaust line 620 may be provided with a first exhaust chamber 621 and the second exhaust line 720 may be provided with a second exhaust chamber 721. The first exhaust chamber 621 may be provided at a predetermined position on one side of the first exhaust line 620 close to the one side of the chamber body 210 and may be disposed on the outer side of the temperature rising gas supply chamber 521 inside the chamber body 210 So as to be formed into a ring shape. The first exhaust line 620 can be connected to the first exhaust chamber 621 inside the chamber body 210 and the inlet portion 622 of the first exhaust line can be connected to the first exhaust chamber 621 along the periphery of the first exhaust chamber 621 And may be opened at a plurality of locations on the first exhaust surface 262 through the chamber body 210 downwardly at a plurality of spaced apart locations.

The second exhaust chamber 721 may be provided at a predetermined position on one side of the second exhaust line 720 near the one side of the chamber body 210 and may be disposed at a predetermined position of the first exhaust chamber 621 inside the chamber body 210. [ And can be formed into a ring shape by surrounding the outer side. The second exhaust line 720 can be connected to the second exhaust chamber 721 inside the chamber body 210 and the inlet portion 722 of the second exhaust line can be connected to the second exhaust chamber 721 along the periphery of the second exhaust chamber 721 And can be opened at a plurality of positions of the second exhaust surface 263 through the chamber body 210 downward at a plurality of spaced apart positions.

Various pollutants generated during the deposition of the film by the first exhaust line 620 and the second exhaust line 720 can be collected and removed by the apparatus before being discharged to the atmosphere.

The laser part 810 is disposed above the chamber part 200 and serves to generate a laser beam irradiated to the processing space 10 so that the laser can be irradiated to the processing space 10. The laser unit 810 cuts the wiring by irradiating laser to the defective position of the processing object S exposed through the window 240 of the chamber 200 or supplies thermal energy to the portion where the wiring is to be formed in the source atmosphere Thereby allowing the metal source to be deposited as a film at the local defect location. The laser unit 810 can be a pulse laser or a continuous laser, and can be configured so that the output can be varied according to a repair operation.

The optical unit 820 is disposed between the laser unit 810 and the chamber unit 200 to adjust the focus and the optical path of the laser irradiated by the laser unit 810. The optical unit 820 may include a laser advancing direction control unit (not shown) for controlling the advancing direction of the laser, and a laser effective area expanding unit (not shown) for increasing the incident angle of the laser. In addition, the optical unit 820 may further include a monitoring unit (not shown) for monitoring the state of the processed object S. The laser traveling direction control unit may include at least one rotatable mirror that can change the traveling direction of the laser by reflecting the laser in a predetermined direction. By using the laser advancing direction control section, it is possible to move the region irradiated with the laser in the processed product S without moving the entire deposition apparatus. The laser effective area expanding part can perform the function of increasing the incident angle of the laser with respect to the objective lens by refracting the laser using at least two bending lenses (not shown). Accordingly, without moving the entire repairing device, (Laser effective area) of the laser beam. The monitoring unit monitors the defects and the repair status of the processed product S by photographing a desired area of the processed product S and determining whether or not the corresponding area is formed.

FIGS. 8 and 9 are process diagrams showing a part of the operation process of the chamber part according to the embodiment of the present invention in a predetermined order.

8, in the embodiment of the present invention, the purge gas f1 is first injected into the upper portion of the processing hole 230 while the temperature-elevated gas f2 is injected to the lower side of the processing hole 230, At the same time, the metal source (g) is injected into the processing hole (230).

Temperature gas f2 injected to the lower side of the processing hole 230 is supplied to the metal source g as shown in Figure 9 when the pressure near the lower side of the processing hole 230 is increased by the temperature- The flow is smoothly guided to the outside of the processing hole 230. [

In this case, the order of the above-described series of processes is not limited to the above, and the order may be variously changed.

Hereinafter, a deposition method according to an embodiment of the present invention will be described in detail with reference to FIGS. 1, 6, 8, and 9. FIG. Hereinafter, embodiments of the present invention will be described with reference to an open defect repair process of a substrate using a chemical vapor deposition repair apparatus. Of course, the deposition method described below can be applied to the deposition process of various films in addition to the repair process of the open defect.

A deposition method according to an embodiment of the present invention is a method of depositing a film on a processing object supported in the atmosphere, comprising the steps of preparing a processing object in the atmosphere, controlling a temperature by injecting a heating gas to a processing space side of the processing object, A step of injecting a source into a processing space, and a step of forming a film by irradiating a laser on one side of the processing object, and exhausting at least one of reactant, product, and unreacted material from the outside of the processing space.

At this time, the process of controlling the temperature by injecting the temperature-elevated gas to the process space side of the treated product, the process of spraying the source into the process space of the treated product, and the process of forming the film by irradiating laser on one surface of the treated product, Or sequentially in any order. As described above, in the embodiment of the present invention, the order of execution of these processes may vary.

In addition, the process of injecting the temperature-elevated gas to the process space side can be carried out continuously while forming the film on one side of the process material. Thus, in the embodiment of the present invention, the crystallization efficiency of the metal source can be improved, the generation of dust of the metal source can be suppressed, and foreign matter can be prevented from flowing into the processing space.

First, a treated product S is prepared. The processed material S may include a substrate and may be loaded and supported in the support 100 in the atmosphere.

Thereafter, the temperature-rising gas f2 is injected toward the processing space 10 side so as to surround the outside of the processing space 10. The temperature-rising gas f2 can be injected in the form of an air curtain, and can be injected to directly surround the processing space 10. Also, the temperature-rising gas f2 may be raised to a predetermined temperature range including the deposition temperature range of the metal source or the vaporization temperature range of the metal source, and may be injected toward the processing space 10 side. For example, the temperature-rising gas f2 may be raised to a temperature range of 20 占 폚 to 40 占 폚 or a temperature range of 30 占 폚 to 35 占 폚 and sprayed toward the processing space 10 side.

Temperature gas f2 can be injected obliquely toward the processing space 10 and a part of the temperature-rising gas f2 flows toward the processing hole 230 side as shown in Fig. 8, And can flow toward the inlet portion 622 side of the exhaust line.

Temperature gas f2 flowing toward the processing hole 230 raises the temperature and pressure of the processing space 10 to a predetermined pressure. Particularly, when the pressure of the processing space 10 rises and reaches a predetermined pressure, the pressure of the gas is formed in the direction toward the outside from the inside of the processing space 10, and as shown in Fig. 9, f2 are smoothly guided to the outside of the processing space 10.

On the other hand, the above procedure is only for illustrating the flow of the temperature-rising gas f2 in the embodiment of the present invention as an example. That is, the flow of the temperature-rising gas f2 in the embodiment of the present invention is not particularly limited in the order shown in Figs. 8 and 9, and a part of the temperature-rising gas f2 flows toward the treatment hole 230 side The order may be variously modified within the scope of satisfying the requirement of forming the air curtain.

On the other hand, the processing space 10 can be isolated from the outside air as the temperature-rising gas f2, for example, the heated inert gas is injected toward the processing space 10, and the temperature of the processing space 10 and / The temperature of one surface of the processed product S in contact therewith can be raised to the temperature range of deposition of the metal source and maintained.

The metal source g is injected into the processing space 10 during or simultaneously with the process of injecting the temperature-rising gas to the process space 10 side. Alternatively, after the process of injecting the temperature-rising gas to the process space 10 is performed for a predetermined time, if the temperature of the one surface of the process material S is controlled to the desired temperature, the process of injecting the temperature- , The metal source (g) is injected into the processing space (10).

The metal source can be prepared in the source supply in powder form and vaporized and transported. At this time, heat is applied to the entire area of the source supply line carrying the metal source to adjust the temperature of the metal source to a level corresponding to the deposition temperature range or the vaporization temperature range of the metal source, for example, a temperature level of 20 to 40 DEG C, And can be supplied to the interior of the processing space 10 at a temperature level of 35 ° C. A metal source such as a cobalt source can maintain the vaporization state well without phase change in the above-mentioned temperature range.

On the other hand, the injection pressure of the metal source (g) and the injection pressure of the temperature-rising gas (f2) may be equal to or different from each other. That is, this is not particularly limited. For example, during the process, each injection pressure may be formed at a predetermined pressure, and at least one of the injection pressures may be increased or decreased to a predetermined value by control or the like. As such, their injection pressure may vary within a given injection pressure value range, which satisfies that the flow of the metal source (g) can be formed in the direction from the interior to the interior of the processing space 10. [

The remaining part of the temperature-rising gas f2 excluding a part of the temperature-rising gas f2 injected toward the processing space 10 is blown downward around the outside of the processing space 10, The flow of the metal source g flowing outside the processing space 10 within the processing space S can be formed in parallel with one surface of the processing object S close to one surface of the processing object S. [ Accordingly, not only the generation of dust can be suppressed, but also the dust can be collected and flowed smoothly to the inlet portion of the exhaust line.

On the other hand, the injection amount of the temperature-rising gas f2 can be constant during the process, and can be variously changed. For example, when the initial temperature elevation gas f2 is injected, the temperature increase gas f2 is injected at a relatively large flow rate, and when the temperature of the process material S is controlled to a desired temperature, the injection amount of the temperature increase gas f2 is reduced And the metal source g can be injected into the processing space 10 while maintaining this state.

Thereafter, a laser beam is irradiated to one surface of the processed product S to form a film on the defective portion. In other words, the laser beam can be irradiated to the defective portion of the processing material in the state of controlling the interior of the processing hole 230 with the atmosphere of the metal source, and the film can be deposited, and the defects of the processing object S can be repaired.

On the other hand, during the process of injecting the temperature-rising gas f2 to the process space 10, or during the process of injecting the metal source into the process space 10, or the process of irradiating the laser on one surface of the process material S The process starts to exhaust at least one of the reactants, the product and the unreacted material outside the processing space 10, and the reaction is performed at a position to surround the outer edge of the air curtain by the temperature-rising gas (f2) The reaction product, the product, and the unreacted substance generated in the reaction are exhausted. At this time, the heating gas used for forming the air curtain is exhausted together.

When the deposition of the film is completed, the irradiation of the laser is terminated, and thereafter, the temperature g2 is further injected for a predetermined time to control the temperature of the repaired region of the processed product S, thereby stabilizing the repaired film. Thereafter, the repair process of the open defect is terminated.

It should be noted that the above-described embodiments of the present invention are for the purpose of illustrating the present invention and not for the purpose of limitation of the present invention. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. It will be possible.

100: Support part 200:
230: treatment hole 261: temperature rising gas spraying surface
300: source supply 344: first source supply line
345: second source supply line 346: third source supply line
510: second gas supply unit 520: temperature-elevated gas supply line

Claims (14)

1. An apparatus for depositing a film on a workpiece supported in the atmosphere,
A chamber part positioned in the atmosphere and having a treatment hole formed on one surface thereof facing the treatment object and providing a treatment space with the treatment object;
A source supply line in which one side is connected to the source supply part, the other side extends into the inside of the chamber part, and an outlet part is formed on the inner peripheral surface of the processing hole;
Temperature gas supply line having one side connected to a temperature-rising gas supply part, the other side extending into the chamber part, and an outlet part being positioned on an elevated temperature gas spray surface formed by surrounding the end of the treatment hole on one surface of the chamber part; And
And a temperature controller connected to the temperature-rising gas supply unit and controlling the temperature of the temperature-rising gas to a deposition temperature or a vaporization temperature of the source,
Wherein an outlet of the temperature-rising gas supply line is formed so as to be inclined downward toward the processing hole side so that the temperature-rising gas flows into the processing space. The method according to claim 1,
And an exhaust line extending to the inside of the chamber portion, wherein an inlet portion is located at an outer periphery of the outlet portion of the temperature-rising gas supply line on one surface of the chamber portion. The method according to claim 1,
Wherein the source supply line includes a plurality of straight pipe portions and at least one connecting portion connecting the straight pipe portions,
Wherein the connection portion is formed in a curved structure. The method according to claim 1,
And a heater portion formed to surround at least a part of the source supply line. The method according to claim 1,
Wherein the source supply line material comprises copper. The method of claim 2,
A laser part formed to be capable of irradiating laser to the processing space;
A source supply connected to the source supply line;
A temperature elevation gas supply unit connected to the temperature elevation gas supply line;
And an exhaust part connected to the exhaust line. CLAIMS 1. A method of depositing a film on a workpiece supported in the atmosphere,
A process of preparing a treatment product in the air;
Controlling a temperature by injecting a temperature-controlled gas having a controlled temperature in a range of the deposition temperature of the source or the vaporization temperature to the processing space side of the processed material;
Spraying the source into a processing space of the processed material;
And irradiating a laser on one side of the processed product to form a film,
Wherein the temperature rising gas flows into the processing space while surrounding the outside of the processing space,
A step of injecting a temperature-rising gas toward the processing space side of the object to be processed and a step of injecting a source into the processing space of the object to be processed. The method of claim 7,
The process of injecting the temperature-elevated gas to the treated space side of the treated product comprises:
And injecting a heating gas toward the processing space side so as to surround the outside of the processing space to isolate the processing space from the outside air. The method of claim 7,
Wherein the temperature elevating gas comprises an inert gas,
Wherein the temperature elevation gas is heated to a temperature ranging from 20 캜 to 40 캜 and is injected toward the processing space side. The method of claim 7,
The process of injecting a source into the processing space of the object to be treated,
And applying heat to at least a portion of the source supply line through which the source is carried to control the temperature of the source. The method of claim 7,
Wherein the source is heated to a temperature ranging from 20 DEG C to 40 DEG C and is injected into the processing space. delete The method of claim 7,
And exhausting at least one of reactants, products and unreacted materials outside the processing space. The method of claim 7,
Wherein the source comprises a cobalt source.
KR1020150178600A 2015-11-11 2015-12-14 Deposition apparatus and method KR101765244B1 (en)

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KR1020150178600A KR101765244B1 (en) 2015-12-14 2015-12-14 Deposition apparatus and method
JP2016025526A JP6194034B2 (en) 2015-12-14 2016-02-15 Vapor deposition apparatus and vapor deposition method
TW106120964A TWI634232B (en) 2015-12-14 2016-02-18 Deposition method
TW105104679A TWI604085B (en) 2015-12-14 2016-02-18 Deposition apparatus
CN201610959641.9A CN107012446B (en) 2015-11-11 2016-10-27 Precipitation equipment and deposition method

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US11661656B2 (en) 2020-01-22 2023-05-30 Eq Tech Plus Co., Ltd. Thin film forming apparatus and radical unit for forming thin film

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