JP5476519B2 - Laser processing equipment - Google Patents

Description

  The present invention relates to a laser processing apparatus, and more particularly to a laser processing apparatus that performs laser CVD (Chemical Vapor Deposition) processing.

  Conventionally, there has been a laser processing apparatus that uses a laser CVD (Chemical Vapor Deposition) method to correct defects in wiring of substrates used in display panels such as LCD (Liquid Crystal Display) panels and organic EL (Electro-Luminescence) panels. It is widespread (for example, see Patent Document 1).

  In a laser processing apparatus using the laser CVD method, a source gas is supplied to the vicinity of a portion where wiring on the substrate is to be corrected, and the correction portion on the substrate is irradiated with laser light and activated by the energy of the laser light. The wiring on the substrate is corrected by depositing gas as a film on the correction portion. However, when the source gas is supplied to the substrate surface, the source gas is recrystallized due to the temperature difference between the source gas and the substrate even in the portion where the laser beam is not irradiated, and the foreign matter generated by the recrystallization is not It becomes a defective part and degrades the quality of the substrate.

  Therefore, in order to prevent the source material contained in the source gas from being recrystallized on the substrate, laser CVD processing (hereinafter simply referred to as CVD processing) is performed with the substrate heated above a predetermined temperature (for example, around 40 ° C.). Also referred to as). For example, in a conventional laser processing apparatus, as shown in FIG. 1, a transparent film heater 12 is pasted on the back surface of a glass table 11 on which a substrate 21 is placed, and the processing surface of the substrate 21 exceeds a predetermined temperature. As a result, the entire glass stage 11 is heated by the transparent film heater 12. Then, the substrate 21 is irradiated with a laser pulse from above while the entire substrate 21 is heated from below, and CVD processing is performed.

JP 2008-279471 A

  However, the transparent film heater 12 is likely to be disconnected, and needs to be repaired or replaced every time the disconnection occurs. This is costly and troublesome, and the operation is stopped until the repair or replacement is completed. On the other hand, if the temperature of the transparent film heater 12 is lowered so that disconnection is less likely to occur, recrystallization of the source material contained in the source gas is likely to occur.

  In addition, when the entire glass stage 11 is heated by the transparent film heater 12, unnecessary portions are heated, and there is a risk of adverse effects due to heat on the components and equipment around the glass stage 11.

  Furthermore, with the increase in the size of the display panel, the glass stage 11 and the transparent film heater 12 tend to be increased in size, becoming expensive and making it difficult to secure storage operations and storage locations.

  Further, there may be a portion where the transparent film heater 12 cannot be attached to the glass mounting table 11 such as a lifter hole (not shown) provided for lifting the substrate 21 from the glass mounting table 11. Insufficient heating may occur.

  The present invention has been made in view of such a situation, and makes it possible to heat the vicinity of a processing portion where CVD processing is performed more reliably and efficiently.

The first laser processing apparatus of the present invention is a blowing means for sending hot air for heating the vicinity of the processing portion, a supply means for supplying and exhausting the source gas, and a supply port for supplying the source gas to the vicinity of the processing portion; A blower port provided around the supply port for supplying the hot air from the blower means to the vicinity of the processing portion, and a first exhaust port that is formed so as to surround the supply port and the blower port and sucks the raw material gas and the hot air. A supply unit provided; an irradiation unit configured to irradiate the processing portion with laser light; a blowing unit; a supply unit; and a control unit configured to control the irradiation unit.

  In the first laser processing apparatus of the present invention, the vicinity of the processing portion is warmed by hot air, the vicinity of the processing portion is maintained in the source gas atmosphere, the processing portion is irradiated with laser light, and a thin film is formed on the processing portion.

Accordingly, it is possible to heat the vicinity of the processing portion where the CVD processing is performed more reliably and efficiently. Moreover, hot air and source gas can be reliably supplied to the vicinity of the processing portion.

This laser processing apparatus is constituted by, for example, a laser repair apparatus. This blowing means is comprised by the air heater which blows off hot air of 150 to 300 degreeC, for example. This supply means is comprised by the gas window etc. which supply the source gas which consists of chromium carbonyl gas, for example. This irradiation means is constituted by, for example, a laser unit that emits a laser pulse. This control means is comprised by the control apparatus which consists of CPU etc., for example.
The supply means may further be provided with a second exhaust port formed so as to surround the first exhaust port.

The control means is configured to heat the vicinity of the processing portion by a blowing means for a predetermined time, then generate a source gas atmosphere in the vicinity of the processing portion by the supply means, and control the irradiation means to irradiate the processing portion with laser light. Can do.

  As a result, the atmosphere in the vicinity of the processed portion can be kept substantially the same, and processing unevenness can be prevented.

Second laser machining apparatus of the present invention, a blowing means, raw material contained in the raw material gas is set to a temperature higher than the temperature to initiate recrystallization, a supply means for supply and exhaust the material gas, the raw material gas Is provided around the supply port, and is formed so as to surround the supply port and the air supply port. Supply means provided with a first exhaust port for sucking wind, irradiation means for irradiating the processing part with laser light, air blowing means, supply means, and control means for controlling the irradiation means.

  In the second laser processing apparatus of the present invention, the wind from the blowing means is heated and sent to the vicinity of the processing portion, the vicinity of the processing portion is warmed, and the vicinity of the processing portion is maintained in the raw material gas atmosphere. Laser light is irradiated to form a thin film on the processed portion.

Accordingly, it is possible to heat the vicinity of the processing portion where the CVD processing is performed more reliably and efficiently. Moreover, hot air and source gas can be reliably supplied to the vicinity of the processing portion.

This laser processing apparatus is constituted by, for example, a laser repair apparatus. This blowing means is constituted by, for example, a blower such as a fan or an air heater. This supply means is comprised by the gas window etc. which supply the source gas which consists of chromium carbonyl gas, for example. This irradiation means is constituted by, for example, a laser unit that emits a laser pulse. This control means is comprised by the control apparatus which consists of CPU etc., for example.
The supply means may further be provided with a second exhaust port formed so as to surround the first exhaust port.

In this control means, after the air is blown for a predetermined time in the vicinity of the processing portion by the blower means and the supply means , a raw material gas atmosphere is generated in the vicinity of the processing portion by the supply means, and the processing portion is irradiated with the laser beam. Can be controlled.

  As a result, the atmosphere in the vicinity of the processed portion can be kept substantially the same, and processing unevenness can be prevented.

  The blowing means can be supplied with hot air for heating the vicinity of the processed portion.

  Thereby, the vicinity of a process part can be heated more than predetermined temperature more quickly.

  According to the first apparatus or the second apparatus of the present invention, it is possible to heat the vicinity of a processing portion where CVD processing is performed more reliably and efficiently.

It is a figure for demonstrating the heating method of the board | substrate at the time of the conventional CVD process. It is a perspective view which shows the structural example of the external appearance of one Embodiment of the laser processing apparatus to which this invention is applied. It is a figure which shows the example of the installation and removal method of a board | substrate. It is a block diagram which shows the structural example of the processing unit of a laser processing apparatus. It is sectional drawing which looked at the gas window of the processing unit from the side. It is a top view of the lower surface of the gas window of a processing unit. It is a flowchart for demonstrating the laser repair process performed by a laser processing apparatus.

Hereinafter, modes for carrying out the present invention (hereinafter referred to as embodiments) will be described. The description will be given in the following order.
1. Embodiment 2. FIG. Modification 1

<Embodiment>
[Configuration example of laser processing equipment]
FIG. 2 is a perspective view showing an external configuration example of an embodiment of a laser processing apparatus to which the present invention is applied.

  A laser processing apparatus 101 in FIG. 2 is a laser repair apparatus that corrects defects in wiring of a substrate used in a display panel such as an LCD panel or an organic EL panel. For example, the laser processing apparatus 101 performs ZAP processing for removing an excess pattern on a substrate by laser-induced plasma, and CVD processing for forming a missing pattern on a substrate by a laser CVD method. The laser processing apparatus 101 is configured to include a base 111, glass mounts 112a to 112d, rail members 113a and 113b, a column 114, and a head 115.

  Hereinafter, the longitudinal direction of the column 114 is referred to as the x-axis direction or the left-right direction, the longitudinal direction of the rail members 113a and 113b is referred to as the y-axis direction or the front-rear direction, and the direction perpendicular to the x-axis and the y-axis is the z-axis direction. Or it is called the up-down direction.

  Rail members 113a and 113b are provided at both left and right ends of the upper surface of the base 111. Further, between the rail member 113a and the rail member 113b, plate-like glass mounts 112a to 112d whose longitudinal direction coincides with the y-axis direction are provided on the upper surface of the base 111 at a predetermined interval.

  As shown in FIG. 3, a substrate 131 to be processed is placed on the glass platforms 112a to 112d. At this time, as shown in FIG. 3, for example, by inserting an arm 132 of an autoloader that carries the substrate 131 into a groove between the glass platforms, the substrate 131 can be easily mounted on the glass platforms 112 a to 112 a. It can be installed at 112d or removed from the glass stage 112a to 112d.

  Hereinafter, when it is not necessary to individually distinguish the glass mounting tables 112a to 112d, they are simply referred to as a glass mounting table 112.

  Rails extending in the y-axis direction are provided on the upper surfaces of the rail members 113a and 113b. Further, a column 114 is suspended between the rail member 113a and the rail member 113b, and both ends in the longitudinal direction of the lower surface of the column 114 are fitted to the rails on the upper surfaces of the rail members 113a and 113b. Then, the column 114 can be moved in the y-axis direction according to the rails on the upper surfaces of the rail members 113a and 113b using an actuator (not shown).

  Further, rails are provided on the front surface and the upper surface of the column 114, and an inverted L-shaped head 115 is fitted to the rails on the front surface and the upper surface of the column 114. Then, it is possible to move the head 115 in the x-axis direction according to the rails on the front surface and the upper surface of the column 114 using an actuator (not shown).

  The head 115 is provided with a processing unit 151 described later with reference to FIG. More specifically, each part of the processing unit 151 is built in the head 115 or attached to the lower surface of the head 115. The processing unit 151 can be moved in the z-axis direction by an actuator (not shown) or the like. Further, as described above, the machining unit 151 can be moved in the x-axis direction and the y-axis direction by moving the column 114 in the y-axis direction or moving the head 115 in the x-axis direction. is there.

  Further, the base 111 incorporates a control unit 152 (FIG. 4) that controls the movement of the column 114, the head 115, and the machining unit 151 and controls the operation of the machining unit 151.

  Hereinafter, the base 111 that does not move the place, the glass mounting table 112, and the rail members 113a and 113b are collectively referred to as a fixed portion 101A, and the column 114 that moves the place and the head 115 are collectively referred to as a movable portion 101B. .

[Example of processing unit configuration]
FIG. 4 is a block diagram illustrating a configuration example of the processing unit 151. The processing unit 151 is configured to include a gas window 161, a laser irradiation observation unit 162, a laser unit 163, a gas intake / exhaust unit 164, an air heater 165, and an air heater control unit 166.

  The gas window 161 is disposed above the substrate 131 placed on the glass stage 112 with a slight gap from the substrate 131. Note that the distance between the gas window 161 and the substrate 131 can be adjusted by moving the processing unit 151 in the z-axis direction. Although details will be described later with reference to FIG. 5 and FIG. 6, the gas window 161 uses the source gas and purge gas supplied from the gas intake / exhaust unit 164 and the hot air supplied from the air heater 165 as laser pulses of the substrate 131. Has an inlet to be supplied in the vicinity of a portion (hereinafter referred to as a laser irradiator) to be irradiated. The gas window 161 has a suction port for sucking the raw material gas and the purge gas so as not to leak outside.

  A laser irradiation observation unit 162 is installed immediately above the gas window 161. The laser irradiation observation unit 162 includes an attenuator (not shown) that changes the pulse energy of the laser pulse, a variable aperture mechanism (not shown) that changes the beam shape of the laser pulse, and a mechanism (not shown) that moves the objective lens up and down. And a microscope mechanism (not shown) for observing the vicinity of the laser irradiation portion of the substrate 131.

  The laser unit 163 includes, for example, laser light sources that emit laser pulses for ZAP processing (hereinafter referred to as ZAP laser pulses) and laser pulses for CVD processing (hereinafter referred to as CVD laser pulses). . The laser pulse emitted from the laser unit 163 is applied to the substrate 131 through the laser irradiation observation unit 162 and the gas window 161. As described above, the position of the laser irradiation portion of the substrate 131 can be adjusted by moving the processing unit 151 in the x-axis direction and the y-axis direction in accordance with the movement of the column 114 and the head 115.

  For example, a laser pulse having the third harmonic (wavelength 351 nm) of the Nd: YLF laser, a repetition frequency of 30 Hz, and a time width of 20 picoseconds is used as the ZAP laser pulse, and the third harmonic of the Nd: YLF laser. A laser pulse with a wave (wavelength 349 nm), a repetition frequency of 4 kHz, and a time width of 30 nanoseconds is used as a CVD laser pulse.

  The gas intake / exhaust unit 164 includes a mechanism that supplies the source gas and the purge gas to the gas window 161 at a necessary timing, and performs a detoxification process of the exhaust gas sucked from the gas window 161. For example, chromium carbonyl gas is used as the source gas, and helium gas or argon gas is used as the purge gas, for example.

  The air heater 165 supplies hot air having a predetermined temperature (for example, 150 to 300 ° C.) to the vicinity of the laser irradiation unit of the substrate 131 through the gas window 161 at a necessary timing under the control of the air heater control unit 166. .

  The air heater control unit 166 controls the timing of blowing hot air from the air heater 165 and the temperature of the hot air based on the control of the control unit 152.

  The control unit 152 controls the operation of each unit of the movable unit 101B of the laser processing apparatus 101. For example, the control unit 152 controls movement of the column 114 in the y-axis direction, movement of the head 115 in the x-axis direction, and movement of the machining unit 151 in the z-axis direction via an actuator (not shown). Further, for example, the control unit 152 controls the illumination of the laser irradiation observation unit 162, the aperture, the attenuation factor of the attenuator, and the like. Further, for example, the control unit 152 controls the pulse energy, repetition frequency, time width (pulse width), emission timing, and the like of the laser pulse emitted from the laser unit 163. Further, for example, the control unit 152 controls the opening / closing timing of a gas opening / closing valve (not shown) of the gas intake / exhaust unit 164. Further, for example, the control unit 152 controls the timing of blowing hot air from the air heater 165, the temperature of the hot air, and the like via the air heater control unit 166.

[Configuration example of gas window]
Next, a configuration example of the gas window 161 will be described with reference to FIGS. 5 and 6. FIG. 5 is a cross-sectional view of the gas window 161 viewed from the side, and FIG. 6 is a plan view of the lower surface of the gas window 161. The gas window 161 includes a disk-shaped window port 201 and a disk-shaped window 202.

  A gas introduction space 201 </ b> A is formed at the center of the window port 201. The diameter of the gas introduction space 201A is constant from the lower surface of the window port 201 to a predetermined height, and the diameter increases in a tapered shape from the middle toward the upper surface. A window 202 for introducing a laser pulse from the laser unit 163 is provided on the upper surface of the window port 201 so as to cover the opening at the upper end of the gas introduction space 201A.

  Immediately below the window 202, purge gas inlets 201 </ b> B- 1 and 201 </ b> B- 2 are provided in parallel to the upper surface of the substrate 131 and facing each other. The purge gas supplied from the gas intake / exhaust unit 164 blows out from the side surface of the gas introduction space 201A via the purge gas introduction ports 201B-1 and 201B-2, and the purge gas prevents the window 202 from being fogged. Further, the purge gas blown out from the side surface of the gas introduction space 201 </ b> A collides with two flows immediately below the window 202, and descends perpendicularly to the surface of the substrate 131 toward the bottom of the gas introduction space 201 </ b> A.

  In a region where the diameter of the gas introduction space 201A is constant, a source gas introduction port 201C is provided in parallel to the surface of the substrate 131. The source gas supplied from the gas intake / exhaust unit 164 is blown from the side surface of the gas introduction space 201A through the source gas introduction port 201C, mixed with the flow of the purge gas, and descending substantially vertically to the upper surface of the substrate 131. Thus, it diffuses into the CVD space 211 between the window port 201 and the substrate 131. The CVD space 211 is in contact with the vicinity of the laser irradiation portion of the substrate 131, that is, the vicinity of the portion where the thin film is formed on the substrate 131 by the laser pulse and the source gas.

  Blower ports 201D-1 to 201D-3 are provided around the opening at the lower end of the gas introduction space 201A on the lower surface of the window port 201. Hot air supplied from the air heater 165 is blown out from the air blowing ports 201D-1 to 201D-3 and diffused into the CVD space 211.

  A ring-shaped exhaust port 201E is formed outside the blower ports 201D-1 to 201D-3 on the lower surface of the window port 201 so as to surround the periphery of the opening at the lower end of the gas introduction space 201A. Further, a ring-shaped exhaust port 201F is formed so as to surround the exhaust port 201E. Then, the air including the purge gas and the raw material gas blown out from the gas introduction space 201A and the hot air blown out from the blower ports 201D-1 to 201D-3 is sucked into the exhaust ports 201E and 201F, and the exhaust port It is sent to the gas intake / exhaust unit 164 from a suction port (not shown) provided in 201E and 201F. Thus, by sucking air from the exhaust ports 201E and 201F, a donut-shaped gas curtain shield part 212 that blocks the CVD space 211 from the outside is formed, and the source gas may leak to the outside by the gas curtain shield part 212. Is prevented. Then, the CVD space 211 is maintained in the source gas atmosphere.

  In addition, the window port 201 is set to a temperature (for example, 65 to 70 ° C.) higher than the temperature at which the source material contained in the source gas starts recrystallization by a heater (not shown) or the like under the control of the control unit 152. The

[Repair processing]
Next, the repair process executed by the laser processing apparatus 101 will be described with reference to the flowchart of FIG. This flowchart shows the flow of processing from the end of processing of a certain portion of the substrate 131 to the end of processing of the next portion.

  In step S1, the control unit 152 raises the machining unit 151 in the z-axis direction. For example, when processing the substrate 131, the distance between the substrate 131 and the gas window 161 is set to about 0.5 mm. Then, in order to move the processing unit 151 to the next processing position, the control unit 152 moves the processing unit 151 in the z-axis direction so that the distance between the substrate 131 and the gas window 161 is increased to about 2 to 3 mm. Raise.

  In step S <b> 2, the gas intake / exhaust unit 164 stops the supply of the source gas based on the control of the control unit 152. If the supply of the source gas has already been stopped, the process of step S2 is skipped. Note that the supply of the purge gas is continued.

  In step S <b> 3, the air heater 165 starts supplying hot air based on the control of the control unit 152 and the air heater control unit 166. Thereby, the blowing of hot air from the air outlets 201D-1 to 201D-3 is started, and the portion of the substrate 131 close to the air outlets 201D-1 to 201D-3 is heated.

  In step S4, the laser processing apparatus 101 moves the processing unit 151. That is, the control unit 152 controls the position of the head 115 in the x-axis direction and the position of the column 114 in the y-axis direction, and moves the machining unit 151 to the next machining position.

  In step S5, the control unit 152 lowers the processing unit 151 in the z-axis direction so that the distance between the substrate 131 and the gas window 161 approaches about 0.5 mm.

  In step S6, the control unit 152 sets the hot air supply time in the timer. That is, the control unit 152 uses the hot air blown from the blower ports 201D-1 to 201D-3 to change the temperature of the region of the processing surface of the substrate 131 including the region in contact with the CVD space 211 into the source gas included in the source gas. A timer is set to a time necessary for the temperature to be higher than the temperature at which the substance does not recrystallize (for example, around 40 ° C.).

  In step S7, the laser processing apparatus 101 starts processing preparation. For example, the laser irradiation observation unit 162 adjusts the focal position of the objective lens so that the focal position of the laser pulse emitted from the laser unit 163 matches the processed surface of the substrate 131 under the control of the control unit 152. In addition, the control unit 152 acquires settings related to processing conditions input by the user via an input unit (not shown) such as the pulse energy of the laser pulse, the value of the attenuation rate of the laser pulse by the attenuator, the size of the slit, Based on the setting, the laser irradiation observation unit 162 and the laser unit 163 are controlled. Furthermore, the control unit 152 acquires detailed information on the position where the CVD process and the ZAP process are performed, which is input by the user via an input unit (not shown).

  In step S8, the air heater 165 stops supplying hot air when the timer set in step S6 expires based on the control of the control unit 152 and the air heater control unit 166. Thus, by stopping the hot air before supplying the source gas and not sending the hot air during the source gas supply, the atmosphere in the CVD space 211 during processing can be kept substantially the same, and processing unevenness Can be prevented.

  In step S <b> 9, the gas intake / exhaust unit 164 starts supplying the source gas under the control of the control unit 152. As a result, the source gas blows out from the lower end of the gas introduction space 201 </ b> A and diffuses into the CVD space 211 between the window port 201 and the substrate 131.

  In step S10, the laser processing apparatus 101 performs CVD processing. Specifically, the control unit 152 controls the emission of the laser pulse from the laser unit 163 while controlling the position of the head 115 in the x-axis direction and the position of the column 114 in the y-axis direction, and is set in step S7. A portion of the substrate 131 subjected to CVD processing is irradiated with a laser pulse. As a result, a thin film made of the source material contained in the source gas is formed on the portion of the substrate 131 irradiated with the laser pulse, and a new pattern is formed.

  In step S <b> 11, the gas intake / exhaust unit 164 stops the supply of the source gas based on the control of the control unit 152.

  In step S12, the laser processing apparatus 101 performs ZAP processing. Specifically, the control unit 152 controls the emission of the laser pulse from the laser unit 163 while controlling the position of the head 115 in the x-axis direction and the position of the column 114 in the y-axis direction, and is set in step S7. A portion of the substrate 131 to be ZAP processed is irradiated with a laser pulse. Thereby, the pattern of the part irradiated with the laser pulse on the substrate 131 is removed.

  In addition, when it is not necessary to perform ZAP processing, the process of step S11 and step S12 is skipped. If there is still a part to be processed, the process is executed again from step S1.

  As described above, the vicinity of the portion where the substrate is subjected to CVD processing can be heated more reliably and efficiently.

  That is, since the transparent film heater is not used, it is not necessary to repair or replace the transparent film heater due to disconnection or the like, and it is possible to reduce the cost and time required for it or prevent the stagnation of work.

  In addition, since only the vicinity of the portion to be subjected to CVD processing is heated, energy required for heating can be reduced, and heating of unnecessary portions can prevent peripheral components and equipment from being adversely affected by heat.

  Furthermore, it is possible to reduce the size of components for heating the substrate, and it is not necessary to replace the component depending on the size of the substrate to be processed, thereby reducing costs and facilitating storage of maintenance products.

  Moreover, as long as it is within the movement range of the processing unit 151, all portions of the substrate can be heated without omission, and the occurrence of insufficient heating can be prevented.

<2. Modification>
In the above description, the example which supplies the hot air more than predetermined temperature from the air heater 165 was shown. However, since the window port 201 is set to a high temperature (65 to 70 ° C.) as described above, the same air as the ambient temperature is supplied from the air heater 165 and the air outlets 201D-1 to 201D− of the window port 201 are supplied. Only by blowing from 3, hot air comes to blow out from the blower openings 201D-1 to 201D-3. It is also possible to heat the substrate 131 with the hot air.

  In addition, the numbers of purge gas inlets, source gas inlets, and air outlets shown in FIGS. 5 and 6 are examples, and can be increased or decreased as necessary.

  The embodiment of the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention.

DESCRIPTION OF SYMBOLS 101 Laser processing apparatus 112a thru | or 112d Glass mounting base 113a, 113b Rail member 114 Column 115 Head 131 Substrate 151 Processing unit 152 Control part 161 Gas window 162 Laser irradiation observation unit 163 Laser unit 164 Gas intake / exhaust unit 165 Air heater 166 Air heater control unit 201 window port 201A gas introduction space 201B-1, 201B-2 purge gas introduction port 201C raw material gas introduction port 201D-1 to 201D-3 air blowing port 201E, 201F exhaust port 211 CVD space 212 gas curtain shield unit

Claims (7)

A blowing means for sending hot air for heating the vicinity of the processing part;
A supply means for supply and exhaust the material gas,
A supply port for supplying the source gas to the vicinity of the processing portion;
An air supply port provided around the supply port, for supplying the hot air from the air blowing means to the vicinity of the processing portion;
A first exhaust port formed to surround the supply port and the blower port, and sucks the source gas and the hot air;
A supply means comprising:
Irradiating means for irradiating the processed portion with laser light;
A laser processing apparatus comprising: the blowing unit, the supply unit, and a control unit that controls the irradiation unit. The supply means includes
A second exhaust port formed to surround the first exhaust port;
The laser processing apparatus according to claim 1, further comprising: The control means heats the vicinity of the processing portion for a predetermined time by the blowing means, generates the source gas atmosphere in the vicinity of the processing portion by the supply means, and irradiates the processing portion with laser light by the irradiation means. the laser processing apparatus according to claim 1 or 2, wherein the controller controls so as to. Air blowing means;
Raw materials contained in the raw material gas is set to a temperature higher than the temperature to initiate recrystallization, a supply means for supply and exhaust the material gas,
A supply port for supplying the source gas to the vicinity of the processing portion;
An air supply port provided around the supply port, for supplying air from the air blowing means to the vicinity of the processing portion;
A first exhaust port formed to surround the supply port and the blower port, and sucks the source gas and the wind;
A supply means comprising:
Irradiating means for irradiating the processed portion with laser light;
A laser processing apparatus comprising: the blowing unit, the supply unit, and a control unit that controls the irradiation unit. The supply means includes
A second exhaust port formed to surround the first exhaust port;
The laser processing apparatus according to claim 4, further comprising: The control means generates a source gas atmosphere in the vicinity of the processing portion by the supply means after the air has been blown in the vicinity of the processing portion by the blowing means and the supply means, and is applied to the processing portion by the irradiation means. It controls so that a laser beam may be irradiated. The laser processing apparatus of Claim 4 or 5 characterized by the above-mentioned. The blowing means, the laser processing apparatus according to any one of claims 4 to 6, characterized in that sending the hot air for heating the working portion near.

Images