201132441 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種雷射加工裝置，特別是關於一種進 行雷射 CVD(Chemical Vapor Deposition;化學氣相沈積） 加工的雷射加工裝置。 【先前技術】 以往，普及地使用雷射 CVD(Chemical Vapor Deposition ;化學氣相沈積）法來修正使用於 LCD(Liquici Crystal Display; 液晶顯示）面板、或有機 EL(Electro-Luminescence ;電激發光）面板等顯示面板之基 板的配線缺陷的雷射加工裝置（例如參閱專利文獻1 )。 在使用雷射CVD法的雷射加工裝置中，係將原料氣體 供給至修正基板上的配線的部分附近，並將雷射光照射於 該基板上的修正部分，以利用雷射光的能量活化的原料氣 體作爲膜而堆積在修正部分，藉以修正基板上的配線。然 而，將原料氣體供給至基板表面時，即使在未照射雷射光 的部分，原料氣體也會因原料氣體與基板的溫度差而再結 晶化，由再結晶化所產生的異物成爲配線的缺陷部分，而 使基板的品質降低。 因此，爲了防止原料氣體中所含的原料物質在基板上 再結晶，而在將基板加熱到預定的溫度（例如40°C前後）以 上的狀態下’進行雷射CVD加工（以下也只稱爲CVD加 工）。例如，在習知的雷射加工裝置中，如圖1所示，將透 -4- 201132441 明薄膜加熱器1 2貼附於載置基板2 1的玻璃載物台1 1的背 面，以基板2 1的加工面成爲預定溫度以上的方式，利用透 明薄膜加熱器12加熱玻璃載物台11全體。然後，在從下 方加熱基板2 1全體的狀態下，從上方將雷射脈衝照射於基 板21，而進行CVD加工。 先前技術文獻 專利文獻 專利文獻1 日本特開2008-279471號公報 【發明內容】 發明欲解決之課題 然而，透明薄膜加熱器12容易產生斷線，每次產生斷 線都要修理或更換，需要費用或工夫，並且迄至修理或更 換完畢爲止.，作業會被停止。另一方面，若爲了使斷線不 易產生而降低透明薄膜加熱器12的溫度，則容易產生原料 氣體中所含的原料物質的再結晶。 此外，若利用透明薄膜加熱器1 2加熱玻璃載物台1 1 全體，因爲連不需要的部分都會被加熱，故會有對玻璃載 物台11周邊的零件或機器賦予熱所產生的不良影響之虞。 再者，伴隨顯示面板的大型化，玻璃載物台11及透明 薄膜加熱器12也會有大型化的趨勢，而成爲高價，同時保 管作業或保管場所的確保會變困難。 此外，有時會有如爲將基板21從玻璃載物台1 1拿起 而設置的提升器用孔（未圖示）等之類不能將透明薄膜加熱 -5- 201132441 器12貼附於玻璃載物台n的部分，在該部分會有產生 熱不足之虞。 本發明係有鑑於此種狀況而完成者，俾可更確實且 效率地加熱進行CVD加工的加工部分附近。 解決課題之手段 本發明之第1雷射加工裝置具備：送風手段，其送 用以加熱加工部分附近的熱風；供給手段，其藉由將原 氣體進行供給排氣，而將加工部分附近保持在原料氣體 境；照射手段，其將雷射光照射於加工部分；及控制手段 其控制送風手段、供給手段、及照射手段。 在本發明之第1雷射加工裝置中，利用熱風加熱加 部分附近’將加工部分附近保持在原料氣體環境，將雷 光照射於加工部分，在加工部分形成薄膜。 因此，可更確實且有效率地加熱進行CVD加工的加 部分附近。 此雷射加工裝置例如係由雷射修復裝置所構成。此 風手段例如係由吹出150 °C〜30 (TC的熱風的熱風機所 成。此供給手段例如係由供給由羰基鉻氣體組成的原料 體的氣窗等所構成。此照射手段例如係由射出雷射脈衝 雷射單元所構成。此控制手段例如係由由C P U等組成的 制裝置所構成。 可使此控制手段控制如下：利用送風手段加熱加工 分附近預定時間後，利用供給手段產生原料氣體環境， 用照射手段將雷射光照射於加工部分。 加 有 出 料 環 工 射 工 送 構 氣 的 控 部 利 -6- 201132441 藉此’可將加工部分附近的氣體環境保持爲大 同，並可防止加工不均勻的產生。 可使來自送風手段的熱風與來自供給手段的原料 從不同的位置供給至加工部分附近。 藉此，可將熱風及原料氣體確實地供給至加工部 近。 本發明之桌2雷射加工裝置具備：送風手段；供 段’其被設定爲比原料氣體中所含的原料物質開始再 之溫度還高的溫度’並且將來自送風手段的風送到加 分附近’藉由將原料氣體進行供給排氣，而將加工部 近保持在原料氣體環境；照射手段，其將雷射光照射 工部分；及控制手段，其控制送風手段、供給手段、 射手段。 在本發明之第2雷射加工裝置中，來自送風手段 被加熱而送到加工部分附近，加熱加工部分附近，並 加工部分附近保持在原料氣體環境，將雷射光照射於 部分，在加工部分形成薄膜。 因此，可更確實且有效率地加熱進行CVD加工的 部分附近。 此雷射加工裝置例如係由雷射修復裝置所構成。 風手段例如係由風扇等的送風機、或熱風機等所構成 供給手段例如係由供給由羰基鉻氣體組成的原料氣體 窗等所構成。此照射手段例如係由射出雷射脈衝的雷 致相 氣體 分附 給手 結晶 工部 分附 於加 及照 的風 且將 加工 加工 此送 。此 的氣 射單 201132441 元所構成。此控制手段例如係由由CPU等組成的控制裝置 所構成。 可使此控制手段控制如下：利用送風手段及供給手段 送風到加工部分附近預定時間後，利用供給手段產生原料 氣體環境，利用照射手段將雷射光照射於加工部分。 藉此，可將加工部分附近的氣體環境保持爲大致相 同，並可防止加工不均勻的產生。 可使此送風手段送出用以加熱加工部分附近的熱風。 藉此，可將加工部分的附近更快地加熱到預定的溫度 以上。 發明之效果 依據本發明的第1裝置或第2裝置，可更確實且有效 率地加熱進行CVD加工的加工部分附近。 【實施方式】 以下，就用以實施本發明的形態（以下稱爲實施形態、） 進行說明。另外，說明係依以下順序進行。 1. 實施形態 2. 變形例1 〈實施形態〉 〔雷射加工裝置的構成例〕 圖2爲顯示適用本發明的雷射加工裝置之一_胃施形態 的外觀的構成例的透視圖。 -8 - 201132441 圖2的雷射加工裝置101爲進行使用於LCD面板或有 機E L面板等顯示面板之基板的配線缺陷等的修正之雷射 修復裝置。例如，雷射加工裝置1 〇 1係進行利用雷射誘發 電漿去除基板的多餘圖案之ZAP加工、及利用雷射CVD 法形成基板欠缺的圖案之CVD加工。雷射加工裝置1〇1係 以包含基台11卜玻璃載物台112a至112d、軌道構件113a、 113b、支柱（column) 114、及頭部115的方式構成。 再者，以下將支柱114的長度方向稱爲X軸方向或左 右方向’將軌道構件113a、113b的長度方向稱爲y軸方向 或前後方向，將與X軸及y軸垂直的方向稱爲z軸方向或 上下方向。 在基台111上面的左右兩端設有軌道構件ll3a、 113b。此外’在軌道構件113a與軌道構件113b之間，將 長度方向與y軸方向一致的板狀玻璃載物台112a至ll2d 以預定間隔設於基台1 1 1的上面。 如圖3所示，在玻璃載物台ii2a至112d的上面載置 成爲加工對象的基板1 3 1。此時，如圖3所示，例如將搬 運基板131的自動裝塡器的臂132插入各玻璃載物台之間 的槽，藉此可容易地將基板131設置於玻璃載物台u 2a至 112d、或從玻璃載物台ii2a至U2d撤除。 另外’以下，在無需各個區別玻璃載物台112a至ll2d 的情況’只稱爲玻璃載物台1 12。 -9 - 201132441 在軌道構件113a、113b的上面，分別設有在y軸方向 延伸的軌道。此外，在軌道構件113a與軌道構件113b之 間架設有支柱114，支柱114下面的長度方向的兩端與軌 道構件1 13a、1 13b上面的軌道嵌合。而且，可使用未圖示 的致動器等，沿著軌道構件113a、113b上面的軌道，使支 柱114在y軸方向移動。 此外，在支柱114的前面及上面設有軌道，倒L字型 的頭部115與支柱114的前面及上面的軌道嵌合。而且， 可使用未圖示的致動器等，沿著支柱114的前面及上面的 軌道，使頭部115在X軸方向移動。 參閱圖4，在頭部115設有後述的加工單元151。更具 體而言，加工單元151的各部分內建於頭部115、或安裝 於頭部115的下面。而且，加工單元151可利用未圖示的 致動器等而在z軸方向移動。此外，如上述，藉由使支柱 114在y軸方向移動、或使頭部115在X軸方向移動，可 使加工單元151在X軸方向及y軸方向移動。 此外，在基台1 1 1上內建有控制部152(圖4)，該控制 部152係控制支柱114、頭部115、及加工單元151的移動、 或控制加工單元1 5 1的動作。 另外’以下’將未移動於場所的基台111、玻璃載物 台112、及軌道構件U3a、113b統稱爲固定部101A，將移 動於場所的支柱1 1 4、及頭部1 1 5統稱爲可動部1 0 1 B。 -10- 201132441 〔加工單元的構成例〕 圖4爲顯示加工單元151的構成例的方塊圖。加工單 元151係以包含氣窗161、雷射照射觀察單元162、雷射單 元163、氣體吸氣排氣單元164、熱風機165、及熱風機控 制單元166的方式構成。 氣窗161係在載置於玻璃載物台112的基板131上 方，與基板1 3 1隔著微小的間隔而配置。再者，氣窗1 6 1 與基板1 3 1之間的距離，可藉由使加.工單元1 5 1在z軸方 向移動而調整。詳細情形將參閱圖5及圖6於後述之，其 中氣窗161具有導入口，該導入口係將從氣體吸氣排氣單 元1 64供給的原料氣體和淨化氣體、及從熱風機〗65供給 的熱風供給至基板131之照射雷射脈衝的部分（以下稱爲雷 射照射部）附近。此外，氣窗1 6 1具備吸入口，該吸入口係 以不會使原料氣體和淨化氣體洩漏到外部的方式吸入。 在氣窗161的正上方設置有雷射照射觀察單元162。 雷射照射觀察單元1 62具有改變雷射脈衝之脈衝能量的衰 減器（未圖示）、使雷射脈衝的射束形狀變化的可變孔徑機 構（未圖示）、使物鏡上下移動以調整焦點位置的機構（未圖 示）、及用以觀察基板131的雷射照射部附近的顯微鏡機構 (未圖不）等。 雷射單元1 63例如分別具備射出ZAP加工用的雷射脈 衝（以下稱爲ZAP雷射脈衝）、及CVD加工用的雷射脈衝（以 下稱爲CVD雷射脈衝）的雷射光源。而且，從雷射單元163 201132441 射出的雷射脈衝係經由雷射照射觀察單元1 6 2及氣窗 1 6 1 ’照射於基板1 3 1。此外’如上述，藉由配合支柱1 j 4 及頭部115的移動而使加工單元151在x軸方向及y軸方 向移動，可調整基板131的雷射照射部的位置。 再者’例如使用Nd : YLF雷射的三次諧波（波長 351nm)、重複頻率30Hz、時間寬度20微微秒的雷射脈衝 作爲ZAP雷射脈衝；使用Nd: YLF雷射的三次諧波（波長 349nm)、重複頻率4kHz、時間寬度30毫微秒的雷射脈衝 作爲CVD雷射脈衝。 氣體吸氣排氣單元164具備將原料氣體、淨化氣體在 必要的時序供給至氣窗1 6 1，並且進行從氣窗1 6 1被吸引 之排氣氣體的無害化處理的機構等。再者，原料氣體係使 用例如羰基鉻氣體，淨化氣體係使用例如氦氣或氬氣。 熱風機165在熱風機控制單元166的控制下，在必要 的時序’經由氣窗1 6 1將預定溫度（例如1 5 〇〜3 0 0 °C )的熱 風供給至基板1 3 1的雷射照射部附近。 熱風機控制單元1 6 6在控制部1 5 2的控制下，控制從 熱風機165吹出熱風的時序、及熱風的溫度等。 此外’控制部1 5 2控制雷射加工裝置1 〇 1的可動部 1 0 1 B之各部分的動作。例如，控制部1 5 2經由未圖示的致 動器等’控制支柱114沿y軸方向的移動、頭部沿X 軸方向的移動、及加工單元151沿z軸方向的移動。此外， 例如控制部1 52控制雷射照射觀察單元1 62的照明、孔徑、 -12- 201132441 衰減器的衰減率等。再者，例如控制部I 5 2控制從雷射單 元1 6 3射出之雷射脈衝的雷射能量、重複頻率、時間寬度（脈 衝寬度）、及射出時序等。此外，例如控制部1 5 2進行氣體 吸氣排氣單元164的氣體開關閥（未圖示）的開關時序等的 控制。再者’例如控制部1 5 2經由熱風機控制單元1 6 6， 控制從熱風機165吹出熱風的時序及熱風的溫度等。 〔氣窗的構成例〕 其次，參閱圖5及圖6，就氣窗161的構成例進行說 明。圖5爲從側面看氣窗161的剖面圖，圖6爲氣窗161 下面的平面圖。氣窗161係由圓盤狀的窗口 201及圓盤狀 的窗202所構成。 在窗口 20 1的中央形成有氣體導入空間部20 1A。氣體 導入空間部201A從窗口 201的下面到預定高度，直徑爲一 定，從中途向上面部，直徑呈錐狀擴大。此外，以覆蓋氣 體導入空間部201A上端的開口的方式，在窗口 201的上面 設有用以導入來自雷射單元163的雷射脈衝的窗202。 以對於基板131的上面平行且相互對向的方式，在窗 202的正下方設有淨化氣體導入口 201B — 1、201B— 2。從 氣體吸氣排氣單元1 64供給的淨化氣體係經由淨化氣體導 入口 201B— 1、201B— 2，從氣體導入空間部201A的側面 吹出，利用該淨化氣體防止窗202的模糊不清。此外，從 氣體導入空間部2 0 1 A的側面·吹出的淨化氣體的2個氣流係 在窗202的正下方相遇，朝向氣體導入空間部201A的下 方，大致對基板131之面垂直下降。 •13- 201132441 在氣體導入空間部201A的直徑成爲一定的區域，與基 板131之面平行地設有原料氣體導入口 201C。從氣體吸氣 排氣單元1 64供給的原料氣體經由原料氣體導入口 2〇丨c , 從氣體導入空間部2 0 1 A的側面吹出，混入淨化氣體的氣 流，成爲向基板131的上面大致垂直下降的氣流，擴散於 窗口 2 0 1與基板1 3 1之間的C V D空間2 1 1。此C V D空間 2 1 1連接於基板1 3 1的雷射照射部附近，即利用雷射脈衝 及原料氣體在基板131上形成薄膜的部分附近。 在窗口 201下面的氣體導入空間部201A下端的開口周 圍設有送風口 201D-1至201D— 3。從熱風機165供給的 熱風自送風口 201D— 1至201D-3吹出，擴散於CVD空 間 2 1 1。 以包圍氣體導入空間部201A下端的開口周圍的方 式，在窗口 201下面的送風口 201D-1至201D— 3的外側 形成有環狀的排氣口 20 1E。再者，以包圍排氣口 20 1E的 方式形成有環狀的排氣口 201F。而且，從氣體導入空間部 20 1A吹出的淨化氣體和原料氣體、及含有從送風口 20 1D —1至20 1D-3吹出之熱風的空氣被吸入此等排氣口 201E、201F，從設於排氣口 201E、201F的未圖示的吸入 口送到氣體吸氣排氣單元164。如此，形成藉由從排氣口 201E、201F吸入空氣，而從外部遮斷CVD空間211的環 狀的氣幕屏蔽部212，利用氣幕屏蔽部212防止原料氣體 漏到外部。而且，CVD空間211會被保持在原料氣體環境。 201132441 此外，窗口 2 0 1在控制部1 5 2的控制下，利用未圖 的加熱器等設定在比原料氣體中所含的原料物質開始再 晶之溫度還高的溫度（例如65〜7〇°C )。 〔修復處理〕 其次，參閱圖7的流程圖’針對由雷射加工裝置t 所執行的修復處理進行說明。另外，此流程圖係顯示從 板1 3 1之某部分的加工結束後到下一部分的加工結束爲 的處理流程。 在步驟S 1中，控制部1 5 2使加工單元1 5 1沿z軸方 上升。例如，進行基板131的加工時，基板131與氣窗1 之間的距離被設定在約〇.5ram左右。然後，爲了使加工 元1 5 1移動到下一個加工位置，控制部1 5 2以基板1 3 1 氣窗161之間的距離擴大爲2〜3mm左右的方式，使加 單元1 5 1沿z軸方向上升。 在步驟S2，氣體吸氣排氣單元164在控制部152的 制下’停止原料氣體的供給。此外，在已停止原料氣體 供給的情況，略過（skip)步驟S2的處理。繼續進行淨化 體的供給。 在步驟S3，熱風機165在控制部152及熱風機控制 元1 66的控制下，開始進行熱風的供給。藉此，開始從 風口 201D— 1至201D-3吹出熱風，加熱基板131之接 送風口 201D — 1至201D—3的部分。 示 結 0 1 基 止 向 6 1 單 與 工 控 之 氣 單 送 近 -15- 201132441 在步驟S4’雷射加工裝置ι〇1移動加工單元ι5ι。即， 控制部152控制頭部115在χ軸方向的位置及支柱ιΐ4在 y軸方向的位置’使加工單元丨5丨移動到下—個加工位置。 在步驟S 5 ’控制部1 5 2係以基板1 3 1與氣窗i 6〗之間 的距離接近達0.5 mm左右的方式，使加工單元151在2軸 方向下降。 在步驟S6 ,控制部1 52將熱風的供給時間設定於定時 器。即’控制部1 52將下述時間設定於定時器：利用從送 風口 201D-1至201D—3吹出的熱風，將包含連接於cvD 空間211的區域之基板丨31的加工面區域的溫度設成原料 氣體中所含的原料物質不會再結晶的溫度（例如4〇t：前後） 以上所需的時間。 在步驟S 7 ’雷射加工裝置1 〇 1開始加工準備。例如， 雷射照射觀察單元162在控制部152的控制下，以從雷射 單元1 63射出的雷射脈衝的焦點位置符合基板〗3丨的加工 面的方式，調整物鏡的焦點位置。此外，控制部1 52經由 未圖示的輸入部，取得關於雷射脈衝的脈衝能量、由衰減 器所產生的雷射脈衝的衰減率之値、縫隙的大小等由使用 者所輸入的加工條件的設定，根據該設定，控制雷射照射 觀察單元162及雷射單元163。再者，控制部152經由未 圖示的輸入部，取得由使用者所輸入之進行CVD加工及 ZAP加工的位置的詳細資訊。 201132441 在步驟S8’熱風機165在控制部152及熱風機控制單 元166的控制下，在於步驟S6中所設定的定時器之預設的 期間終止的時點’停止熱風的供給。如此，在原料氣體的 供給前停止熱風，在原料氣體供給中不送熱風，藉此可將 加工中的CVD空間211內的氣體環境保持爲大致相同，並 可防止加工不均勻的產生。 在步驟S9，氣體吸氣排氣單元164在控制部152的控 制下’開始進行原料氣體的供給。藉此，原料氣體從氣體 導入空間部‘2 01A的下端吹出，擴散於窗口 201與基板131 之間的C V D空間2 1 1。 在步驟S 1 0，雷射加工裝置1 〇 1進行CVD加工。具體 而言，控制部152 —面控制頭部115在X軸方向的位置及 支柱114在y軸方向的位置，一面控制來自雷射單元163 的雷射脈衝的射出，使雷射脈衝照射於在步驟S 7所設定之 基板1 3 1進行CVD加工的部分。藉此，在基板丨3丨照射有 雷射脈衝的部分形成由原料氣體中所含的原料物質所產生 的薄膜，形成新的圖案。 在步驟S11，氣體吸氣排氣單元164在控制部152的 控制下，停止原料氣體的供給。 在步驟S12，雷射加工裝置101進行ZAP加工。具體 而言’控制部152 —面控制頭部115在X軸方向的位置及 支柱114在y軸方向的位置，一面控制來自雷射單元ι63 的雷射脈衝的射出，使雷射脈衝照射於在步驟S 7所設定之 -17- 201132441 基板131進行ZAP加工的部分。藉此’去除基 有雷射脈衝之部分的圖案。 再者，在無需進行ZAP加工的情況’略過 步驟S12的處理。此外，在還留下要加工的部 從步驟S 1起執行處理。 如以上，可更確實且有效率地加熱基板的交 工的部分附近。 即，由於不使用透明薄膜加熱器，所以無 薄膜加熱器的斷線等所產生的修理或更換，可 此的費用或工夫、或防止作業的停頓。 此外，由於僅加熱進行CVD加工的部分附 削減加熱所需的能源，同時可防止因加熱不要 周邊的零件或機器造成熱所產生的不良影響。 再者，可將用以加熱基板的零件小型化， 著成爲加工對象的基板大小來進行更換，可削 且可使維修品的保管容易。 此外’若是在加工單元151的移動範圍內 漏地加熱基板的所有部分，可防止加熱不足的 〈2 ·變形例〉 在以上的說明中，顯示從熱風機丨65供給 上的熱風之例。然而’如上述，由於窗口 的溫度（65〜70 °C )，所以藉由僅設成從熱風機 周圍的溫度相同的風，並從窗口 201的送風口 板1 3 1照射 步驟S1 1及 分的情況， I行CVD加 需進行透明 削減花費於 近，所以可 的部分而對 並且無需隨 減成本，並 ，則可不遺 產生。 預定溫度以 係設定爲高 1 6 5供給與 201D- 1 至 201132441 201D-3吹出，可從送風口 201D— 1至201D— 3就吹出熱 風。而且，也可利用該熱風來加熱基板131。 此外，圖5及圖6所示的淨化氣體導入□、原料氣體 導入口、及送風口的數量爲其一例，可按照需要增減。 再者，本發明的實施形態並不限定於上述的實施形 態，可在不脫離本發明要旨的範圍內進行各種變更》 【圖式簡單說明】 圖1爲用以說明習知的C V D加工時的基板加熱方法的 圖。 圖2爲顯示適用本發明的雷射加工裝置之一實施形態 的外觀的構成例的立體圖。 圖3爲顯示基板的設置及撤除方法之例的圖。 圖4爲顯示雷射加工裝置的加工單元的構成例的方塊 圖。 圖5爲從側面看加工單元的氣窗的剖面圖。 圖6爲加工單元的氣窗下面的俯視圖。 圖7爲用以說明由雷射加工裝置所執行的雷射修復處 理的流程圖。 【主要元件符號說明】 11 載物台 12 透明薄膜加熱器 2 1 基板 101 雷射加工裝置 -19- 201132441 1 0 1 A 固 定 部 1 0 1 B 可 動 部 112' 1 1 2a〜11 2d 玻 璃 載 物 台 113a、 113b 軌 道 構 件 114 支 柱 115 頭 部 13 1 基 板 13 2 臂 15 1 加 工 單 元 1 52 控 制 部 16 1 氣 窗 1 62 雷 射 昭 / \ \\ 射 觀 察 單 元 163 雷 射 單 元 164 氣 體 吸 氣 排 氣 單 元 1 65 熱 風 機 166 熱 風 機 控 制 單 元 20 1 窗 □ 202 窗 20 1 A 氣 體 導 入 空 間 部 20 1 B - 1 ' 20 1 B - 2 淨 化 氣 體 導 入 □ 20 1 C 原 料 氣 體 導 入 □ 20 1 D - 1 〜20 1 D - 3 送 風 □ 201E、 20 1 F 排 氣 □ -20- 201132441 2 11 CVD空間 2 12 氣幕屏蔽部 -2 1-201132441 VI. Description of the Invention: [Technical Field] The present invention relates to a laser processing apparatus, and more particularly to a laser processing apparatus for performing laser CVD (Chemical Vapor Deposition) processing. [Prior Art] Conventionally, a laser CVD (Chemical Vapor Deposition) method has been widely used for correction of an LCD (Liquici Crystal Display) panel or an organic EL (Electro-Luminescence). A laser processing apparatus for wiring defects of a substrate of a display panel such as a panel (see, for example, Patent Document 1). In a laser processing apparatus using a laser CVD method, a material gas is supplied to a vicinity of a portion of a wiring on a correction substrate, and laser light is irradiated onto a correction portion on the substrate to activate a material utilizing energy of laser light. The gas is deposited as a film on the correction portion to correct the wiring on the substrate. However, when the material gas is supplied to the surface of the substrate, the material gas is recrystallized due to the temperature difference between the material gas and the substrate even in the portion where the laser light is not irradiated, and the foreign matter generated by the recrystallization becomes a defective portion of the wiring. And the quality of the substrate is lowered. Therefore, in order to prevent the raw material contained in the material gas from recrystallizing on the substrate, the laser CVD processing is performed in a state where the substrate is heated to a predetermined temperature (for example, before and after 40 ° C) (hereinafter also referred to as "only" CVD processing). For example, in a conventional laser processing apparatus, as shown in FIG. 1, a transparent film heater 12 is attached to the back surface of the glass stage 1 1 on which the substrate 21 is placed, and the substrate is used as a substrate. The processing surface of the 21 is a predetermined temperature or higher, and the glass substrate 11 is heated by the transparent film heater 12. Then, in a state where the entire substrate 2 is heated from the lower side, a laser pulse is irradiated onto the substrate 21 from above to perform CVD processing. CITATION LIST Patent Literature PTL No. 2008-279471 SUMMARY OF THE INVENTION PROBLEM TO BE SOLVED BY THE INVENTION However, the transparent film heater 12 is liable to be broken, and it is necessary to repair or replace each time a wire break occurs, and it is expensive. Or work, and until the repair or replacement is completed, the operation will be stopped. On the other hand, if the temperature of the transparent thin film heater 12 is lowered in order to prevent the occurrence of disconnection, recrystallization of the raw material contained in the raw material gas is likely to occur. Further, if the entire glass stage 1 1 is heated by the transparent film heater 12, since unnecessary portions are heated, there is a possibility that heat is applied to components or machines around the glass stage 11. After that. In addition, as the size of the display panel increases, the glass stage 11 and the transparent film heater 12 tend to increase in size, which is expensive, and it is difficult to secure the storage work or the storage place. Further, there is a case where a transparent film is not heated, such as a lifter hole (not shown) provided to lift the substrate 21 from the glass stage 1 1 , and the like is attached to the glass load. The part of the table n will have insufficient heat in this part. The present invention has been completed in view of such a situation, and it is possible to more reliably and efficiently heat the vicinity of a processed portion where CVD processing is performed. Means for Solving the Problem A first laser processing apparatus according to the present invention includes: a blowing means for supplying hot air in the vicinity of a processed portion; and a supply means for supplying the raw gas to the exhaust gas to maintain the vicinity of the processed portion a raw material gas atmosphere; an irradiation means for irradiating the laser beam to the processing portion; and a control means for controlling the air supply means, the supply means, and the irradiation means. In the first laser processing apparatus of the present invention, the vicinity of the processed portion is held in the material gas atmosphere by the hot air heating portion, and the laser beam is irradiated onto the processed portion to form a film in the processed portion. Therefore, the vicinity of the addition portion where the CVD process is performed can be heated more surely and efficiently. This laser processing apparatus is constituted, for example, by a laser repairing apparatus. This wind means is formed, for example, by a hot air blower that blows hot air of 150 ° C to 30 (TC). This supply means is constituted, for example, by a louver that supplies a raw material body composed of carbonyl chromium gas. This irradiation means is ejected, for example, by injection. The laser pulse laser unit is composed of, for example, a system composed of a CPU or the like. The control means can be controlled as follows: after the predetermined time is heated by the air blowing means, the raw material gas is generated by the supply means. Environment, the laser light is irradiated to the processing part by means of irradiation. The control part of the delivery ring is sent to the gas control unit. -6- 201132441 By this, the gas environment near the processing part can be kept the same and can be prevented. The processing unevenness is generated. The hot air from the air blowing means and the raw material from the supply means can be supplied from different positions to the vicinity of the processing portion. Thereby, the hot air and the material gas can be reliably supplied to the processing portion. (2) The laser processing apparatus includes: a blowing means; the supply section 'which is set to start more than the raw material contained in the raw material gas The temperature is also high, and the wind from the air supply means is sent to the vicinity of the bonus point. By supplying the material gas to the exhaust gas, the processing portion is kept close to the material gas atmosphere; and the irradiation means irradiates the laser light. And a control means for controlling the air blowing means, the supply means, and the means for shooting. In the second laser processing apparatus of the present invention, the air blowing means is heated and sent to the vicinity of the processing portion, near the heat processing portion, and near the processing portion. It is kept in the material gas atmosphere, irradiates the laser light to the portion, and forms a film on the processed portion. Therefore, it is possible to more reliably and efficiently heat the vicinity of the portion where the CVD process is performed. This laser processing device is constituted, for example, by a laser repair device. The wind means is, for example, a supply means formed by a blower such as a fan or a hot air blower, for example, by supplying a raw material gas window composed of a chromium carbonyl gas, etc. This irradiation means is, for example, a lightning-induced phase in which a laser pulse is emitted. The gas is attached to the hand crystallizer part and attached to the wind of the addition and will be processed and processed. This control means is constituted by a control device composed of, for example, a CPU. The control means can be controlled as follows: after the air is blown to the vicinity of the processing portion by the air blowing means and the supply means, the raw material is generated by the supply means. In the gas environment, the laser light is irradiated to the processing portion by the irradiation means. Thereby, the gas atmosphere in the vicinity of the processed portion can be kept substantially the same, and uneven processing can be prevented. The air blowing means can be sent out for heating the processing portion. The hot air in the vicinity. Thereby, the vicinity of the processed portion can be heated more quickly to a predetermined temperature or higher. Advantageous Effects of Invention According to the first device or the second device of the present invention, CVD processing can be performed more reliably and efficiently. [Embodiment] Hereinafter, a mode for carrying out the invention (hereinafter referred to as an embodiment) will be described. In addition, the description is made in the following order. 1. EMBODIMENT 2. EMBODIMENT 1 <Embodiment> [Configuration Example of Laser Processing Apparatus] Fig. 2 is a perspective view showing a configuration example of an appearance of one of the laser processing apparatuses to which the present invention is applied. -8 - 201132441 The laser processing apparatus 101 of Fig. 2 is a laser repairing apparatus for correcting wiring defects or the like of a substrate used for a display panel such as an LCD panel or an organic EL panel. For example, the laser processing apparatus 1 〇 1 performs CVD processing of ZAP processing by using a laser-induced plasma to remove an unnecessary pattern of a substrate, and forming a pattern in which a substrate is missing by a laser CVD method. The laser processing apparatus 1〇1 is configured to include a base 11 and glass stages 112a to 112d, rail members 113a and 113b, a column 114, and a head 115. In the following, the longitudinal direction of the pillars 114 is referred to as an X-axis direction or a left-right direction. The longitudinal direction of the rail members 113a and 113b is referred to as a y-axis direction or a front-rear direction, and a direction perpendicular to the X-axis and the y-axis is referred to as z. Axis direction or up and down direction. Track members ll3a, 113b are provided at the left and right ends of the upper surface of the base 111. Further, between the rail member 113a and the rail member 113b, the plate-shaped glass stages 112a to ll2d whose longitudinal direction coincides with the y-axis direction are provided on the upper surface of the base 11 1 at a predetermined interval. As shown in Fig. 3, the substrate 1 31 to be processed is placed on the upper surfaces of the glass stages ii2a to 112d. At this time, as shown in FIG. 3, for example, the arm 132 of the automatic mounter that transports the substrate 131 is inserted into the groove between the glass substrates, whereby the substrate 131 can be easily placed on the glass stage u 2a to 112d, or removed from the glass stage ii2a to U2d. Further, hereinafter, it is only referred to as a glass stage 1 12 in the case where it is not necessary to distinguish the glass stages 112a to 11d. -9 - 201132441 On the upper surfaces of the rail members 113a and 113b, rails extending in the y-axis direction are respectively provided. Further, a strut 114 is placed between the rail member 113a and the rail member 113b, and both ends in the longitudinal direction of the lower surface of the strut 114 are fitted to the rails on the upper surfaces of the rail members 1 13a and 1 13b. Further, the struts 114 can be moved in the y-axis direction along the rails on the upper surfaces of the rail members 113a and 113b by using an actuator or the like (not shown). Further, rails are provided on the front and upper sides of the stays 114, and the inverted L-shaped heads 115 are fitted to the front and upper rails of the stays 114. Further, the head portion 115 can be moved in the X-axis direction along the front and rear rails of the strut 114 by using an actuator or the like (not shown). Referring to Fig. 4, a machining unit 151, which will be described later, is provided in the head portion 115. More specifically, portions of the processing unit 151 are built into the head 115 or mounted below the head 115. Further, the machining unit 151 can be moved in the z-axis direction by an actuator or the like (not shown). Further, as described above, by moving the column 114 in the y-axis direction or moving the head portion 115 in the X-axis direction, the machining unit 151 can be moved in the X-axis direction and the y-axis direction. Further, a control unit 152 (Fig. 4) is built in the base 11 1 , and the control unit 152 controls the movement of the support 114, the head 115, and the machining unit 151, or controls the operation of the machining unit 151. Further, 'below', the base 111, the glass stage 112, and the rail members U3a and 113b which are not moved to the place are collectively referred to as a fixed portion 101A, and the pillars 1 1 4 and 1 1 5 which are moved to the place are collectively referred to as Movable part 1 0 1 B. -10-201132441 [Configuration Example of Machining Unit] FIG. 4 is a block diagram showing a configuration example of the processing unit 151. The processing unit 151 is configured to include a louver 161, a laser irradiation observation unit 162, a laser unit 163, a gas intake and exhaust unit 164, a hot air blower 165, and a hot air blower control unit 166. The gas window 161 is placed above the substrate 131 of the glass stage 112, and is disposed at a slight interval from the substrate 133. Furthermore, the distance between the louver 161 and the substrate 133 can be adjusted by moving the processing unit 151 in the z-axis direction. The details will be described later with reference to FIGS. 5 and 6, wherein the louver 161 has an introduction port which supplies the raw material gas and the purge gas supplied from the gas intake and exhaust unit 164, and the hot air blower 65. Hot air is supplied to the vicinity of a portion of the substrate 131 that irradiates the laser pulse (hereinafter referred to as a laser irradiation portion). Further, the louver 161 has a suction port that is sucked in such a manner that the source gas and the purge gas are not leaked to the outside. A laser irradiation observation unit 162 is disposed directly above the louver 161. The laser irradiation observation unit 1 62 has an attenuator (not shown) that changes the pulse energy of the laser pulse, a variable aperture mechanism (not shown) that changes the beam shape of the laser pulse, and moves the objective lens up and down to adjust A mechanism (not shown) at the focus position, and a microscope mechanism (not shown) for observing the vicinity of the laser irradiation portion of the substrate 131. The laser unit 1 63 includes, for example, a laser light source for emitting a laser pulse for processing ZAP (hereinafter referred to as a ZAP laser pulse) and a laser pulse for CVD processing (hereinafter referred to as a CVD laser pulse). Further, the laser beam emitted from the laser unit 163 201132441 is irradiated onto the substrate 13 1 via the laser irradiation observation unit 1 6 2 and the air window 1 6 1 '. Further, as described above, by moving the processing unit 151 in the x-axis direction and the y-axis direction in accordance with the movement of the support 1 j 4 and the head 115, the position of the laser irradiation portion of the substrate 131 can be adjusted. Furthermore, for example, a third harmonic of a Nd:YLF laser (wavelength 351 nm), a repetition frequency of 30 Hz, a time width of 20 picoseconds, a laser pulse as a ZAP laser pulse, and a third harmonic of a Nd:YLF laser (wavelength) A laser pulse of 349 nm), a repetition rate of 4 kHz, and a time width of 30 nanoseconds is used as a CVD laser pulse. The gas intake and exhaust unit 164 includes a mechanism for supplying the source gas and the purge gas to the gas window 161 at a necessary timing, and performing a detoxification treatment of the exhaust gas sucked from the gas window 161. Further, the raw material gas system uses, for example, carbonyl chromium gas, and the purge gas system uses, for example, helium or argon. The hot air blower 165 supplies, under the control of the hot air blower control unit 166, the hot air of a predetermined temperature (for example, 1 5 〇 to 300 ° C) to the substrate 1 3 1 through the louver 116. Near the ministry. The hot air blower control unit 166 controls the timing of blowing hot air from the hot air blower 165, the temperature of the hot air, and the like under the control of the control unit 152. Further, the control unit 152 controls the operation of each of the movable portions 1 0 1 B of the laser processing device 1 〇 1 . For example, the control unit 152 controls the movement of the strut 114 in the y-axis direction, the movement of the head in the X-axis direction, and the movement of the machining unit 151 in the z-axis direction via an actuator or the like (not shown). Further, for example, the control unit 1 52 controls the illumination of the laser irradiation observation unit 1 62, the aperture, the attenuation rate of the -12-201132441 attenuator, and the like. Further, for example, the control unit I 5 2 controls the laser energy, the repetition frequency, the time width (pulse width), the emission timing, and the like of the laser pulse emitted from the laser unit 163. Further, for example, the control unit 152 controls the switching timing of the gas switching valve (not shown) of the gas intake and exhaust unit 164. Further, for example, the control unit 152 controls the timing of the hot air blown from the hot air blower 165, the temperature of the hot air, and the like via the hot air blower control unit 146. [Configuration Example of Air Window] Next, a configuration example of the air window 161 will be described with reference to Figs. 5 and 6 . Fig. 5 is a cross-sectional view of the louver 161 as seen from the side, and Fig. 6 is a plan view below the louver 161. The gas window 161 is composed of a disk-shaped window 201 and a disk-shaped window 202. A gas introduction space portion 20 1A is formed in the center of the window 20 1 . The gas introduction space portion 201A has a predetermined diameter from the lower surface of the window 201 to a predetermined height, and is enlarged upward in a tapered shape from the middle to the upper surface. Further, a window 202 for introducing a laser pulse from the laser unit 163 is provided on the upper surface of the window 201 so as to cover the opening of the upper end of the gas introduction space portion 201A. The purge gas introduction ports 201B-1, 201B-2 are provided directly below the window 202 so that the upper surfaces of the substrates 131 are parallel and opposed to each other. The purge gas system supplied from the gas intake and exhaust unit 164 is blown from the side surface of the gas introduction space 201A via the purge gas inlets 201B-1, 201B-2, and the purge gas 202 is prevented from being blurred by the purge gas. Further, the two air flows of the purge gas blown from the side surface of the gas introduction space portion 2 0 1 A meet immediately below the window 202, and are directed downward to the surface of the substrate 131 substantially toward the lower side of the gas introduction space portion 201A. 13-201132441 A material gas introduction port 201C is provided in parallel with the surface of the substrate 131 in a region where the diameter of the gas introduction space portion 201A is constant. The material gas supplied from the gas intake/exhaust unit 1 64 is blown out from the side surface of the gas introduction space portion 2 0 1 A through the material gas introduction port 2〇丨c, and the gas stream mixed with the purge gas is substantially perpendicular to the upper surface of the substrate 131. The descending airflow is diffused in the CVD space 2 1 1 between the window 210 and the substrate 1 31. The C V D space 2 1 1 is connected to the vicinity of the laser irradiation portion of the substrate 133, that is, in the vicinity of the portion where the thin film is formed on the substrate 131 by the laser pulse and the material gas. Air blowing ports 201D-1 to 201D-3 are provided around the opening at the lower end of the gas introduction space portion 201A below the window 201. The hot air supplied from the hot air blower 165 is blown out from the air supply ports 201D-1 to 201D-3 and diffused into the CVD space 2 1 1 . An annular exhaust port 20 1E is formed outside the air supply ports 201D-1 to 201D-3 below the window 201 in such a manner as to surround the opening of the lower end of the gas introduction space portion 201A. Further, an annular exhaust port 201F is formed to surround the exhaust port 20 1E. Further, the purge gas and the material gas blown from the gas introduction space portion 20 1A and the air containing the hot air blown from the air supply ports 20 1D-1 to 20 1D-3 are sucked into the exhaust ports 201E and 201F from the exhaust ports 201E and 201F. The suction ports (not shown) of the exhaust ports 201E and 201F are sent to the gas intake and exhaust unit 164. In this manner, the annular air curtain shielding portion 212 that blocks the CVD space 211 from the outside by taking in air from the exhaust ports 201E and 201F is formed, and the gas curtain shielding portion 212 prevents the material gas from leaking to the outside. Moreover, the CVD space 211 is maintained in the material gas environment. In addition, the window 203 is set to a temperature higher than the temperature at which the raw material contained in the material gas starts to recrystallize (for example, 65 to 7 利用) by the control unit 152 under the control of the control unit 152. °C). [Remediation Process] Next, the repair process performed by the laser processing apparatus t will be described with reference to the flowchart of Fig. 7 . Further, this flowchart shows a processing flow from the end of the processing of a certain portion of the board 133 to the end of the processing of the next portion. In step S1, the control unit 152 raises the machining unit 155 along the z-axis. For example, when the substrate 131 is processed, the distance between the substrate 131 and the louver 1 is set to about 〇5. Then, in order to move the processing element 151 to the next processing position, the control unit 152 expands the distance between the substrate 133 and the louver 161 to about 2 to 3 mm, so that the adding unit 1 5 1 is along the z-axis. The direction is rising. In step S2, the gas intake and exhaust unit 164 stops the supply of the material gas under the control of the control unit 152. Further, in the case where the supply of the material gas has been stopped, the processing of step S2 is skipped. Continue to supply the purifying body. In step S3, the hot air blower 165 starts the supply of hot air under the control of the control unit 152 and the hot air blower control unit 66. Thereby, hot air is blown out from the tuyères 201D-1 to 201D-3, and the portions of the substrate tuyes 201D-1 to 201D-3 are heated. The indication 0 1 base direction 6 1 single and the industrial control gas single delivery -15- 201132441 In step S4' laser processing apparatus ι〇1 moves the processing unit ι5ι. That is, the control unit 152 controls the position of the head portion 115 in the x-axis direction and the position of the column ι 4 in the y-axis direction to move the machining unit 丨5丨 to the next machining position. In step S5', the control unit 152 lowers the machining unit 151 in the two-axis direction so that the distance between the substrate 133 and the louver i6 is approximately 0.5 mm. In step S6, the control unit 152 sets the supply time of the hot air to the timer. In other words, the control unit 1 52 sets a time period in which the temperature of the processing surface area of the substrate cassette 31 including the region connected to the cvD space 211 is set by the hot air blown from the air blowing ports 201D-1 to 201D-3. The time required for the temperature at which the raw material contained in the raw material gas does not recrystallize (for example, 4 〇t: before and after). At step S7', the laser processing apparatus 1 〇 1 starts processing preparation. For example, under the control of the control unit 152, the laser irradiation observation unit 162 adjusts the focus position of the objective lens such that the focus position of the laser pulse emitted from the laser unit 163 conforms to the processing surface of the substrate. Further, the control unit 1 52 acquires processing conditions input by the user, such as the pulse energy of the laser pulse, the attenuation rate of the laser pulse generated by the attenuator, the size of the slit, and the like, via an input unit (not shown). According to this setting, the laser irradiation observation unit 162 and the laser unit 163 are controlled. Further, the control unit 152 acquires detailed information of the position of the CVD processing and the ZAP processing input by the user via an input unit (not shown). 201132441 In step S8', the hot air blower 165 stops the supply of hot air at the time point when the preset period of the timer set in step S6 is terminated under the control of the control unit 152 and the hot air blower control unit 166. As described above, the hot air is stopped before the supply of the material gas, and the hot air is not supplied during the supply of the material gas, whereby the gas atmosphere in the CVD space 211 during processing can be kept substantially the same, and uneven processing can be prevented. In step S9, the gas intake and exhaust unit 164 starts the supply of the material gas under the control of the control unit 152. Thereby, the material gas is blown from the lower end of the gas introduction space portion '01A, and is diffused in the C V D space 2 1 1 between the window 201 and the substrate 131. At step S10, the laser processing apparatus 1 〇 1 performs CVD processing. Specifically, the control unit 152 controls the position of the head 115 in the X-axis direction and the position of the pillar 114 in the y-axis direction, and controls the emission of the laser pulse from the laser unit 163 to illuminate the laser beam. The portion of the substrate 1 31 set in step S7 is subjected to CVD processing. Thereby, a film formed by the raw material contained in the material gas is formed in the portion where the substrate 丨3 is irradiated with the laser pulse, and a new pattern is formed. In step S11, the gas intake and exhaust unit 164 stops the supply of the material gas under the control of the control unit 152. At step S12, the laser processing apparatus 101 performs ZAP processing. Specifically, the control unit 152 controls the position of the head 115 in the X-axis direction and the position of the pillar 114 in the y-axis direction, and controls the emission of the laser pulse from the laser unit ι63 to illuminate the laser beam. -17-201132441 set in step S7 The portion of the substrate 131 subjected to ZAP processing. Thereby, the pattern of the portion having the laser pulse is removed. Furthermore, the process of step S12 is skipped in the case where ZAP processing is not required. Further, the processing is performed from the step S1 while leaving the portion to be processed. As described above, it is possible to more reliably and efficiently heat the vicinity of the portion where the substrate is to be worked. That is, since the transparent film heater is not used, there is no repair or replacement caused by the disconnection of the film heater, etc., and the cost or the labor or the pause of the work can be prevented. In addition, since only the portion where the CVD process is performed is heated to reduce the energy required for heating, it is possible to prevent the adverse effects of heat caused by the surrounding parts or the machine due to heating. Further, the parts for heating the substrate can be miniaturized, and the size of the substrate to be processed can be replaced, and the maintenance can be easily performed. Further, if all the portions of the substrate are leaked in the movement range of the processing unit 151, it is possible to prevent insufficient heating. <2. Modifications> In the above description, an example of hot air supplied from the hot air blower 65 is displayed. However, as described above, since the temperature of the window (65 to 70 ° C) is set, only the wind having the same temperature from the periphery of the hot air blower is provided, and the step S1 1 and the minute are irradiated from the air supply port plate 131 of the window 201. In the case of the I-line CVD plus the need for transparent reduction, it is close to the cost, so the available part is correct and does not need to be reduced, and it can not be produced. The predetermined temperature is set to be high. The supply is blown out from 201D-1 to 201132441 201D-3, and hot air can be blown from the air supply ports 201D-1 to 201D-3. Moreover, the hot air can also be used to heat the substrate 131. Further, the number of the purge gas introduction port □, the material gas inlet port, and the air supply port shown in Figs. 5 and 6 is an example, and may be increased or decreased as necessary. The embodiment of the present invention is not limited to the embodiment described above, and various modifications can be made without departing from the spirit and scope of the invention. FIG. 1 is a view for explaining conventional CVD processing. Diagram of the substrate heating method. Fig. 2 is a perspective view showing a configuration example of an appearance of an embodiment of a laser processing apparatus to which the present invention is applied. Fig. 3 is a view showing an example of a method of setting and removing a substrate. Fig. 4 is a block diagram showing a configuration example of a machining unit of the laser processing apparatus. Figure 5 is a cross-sectional view of the louver of the processing unit as seen from the side. Figure 6 is a top plan view of the underside of the louver of the processing unit. Fig. 7 is a flow chart for explaining laser repair processing performed by the laser processing apparatus. [Main component symbol description] 11 Stage 12 Transparent film heater 2 1 Substrate 101 Laser processing device-19- 201132441 1 0 1 A Fixing part 1 0 1 B Moving part 112' 1 1 2a~11 2d Glass load Stages 113a, 113b Track member 114 Pillar 115 Head 13 1 Substrate 13 2 Arm 15 1 Machining unit 1 52 Control part 16 1 Air window 1 62 Laser shot / \\ Shooting unit 163 Laser unit 164 Gas suction Unit 1 65 Heater 166 Heater control unit 20 1 Window □ 202 Window 20 1 A Gas introduction space 20 1 B - 1 ' 20 1 B - 2 Purified gas introduction □ 20 1 C Raw material gas introduction □ 20 1 D - 1 ~20 1 D - 3 air supply □ 201E, 20 1 F exhaust □ -20- 201132441 2 11 CVD space 2 12 air curtain shield - 2 1-