TW202236555A - Uv curing device, substrate processing equipment and substrate processing method - Google Patents

Uv curing device, substrate processing equipment and substrate processing method Download PDF

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TW202236555A
TW202236555A TW111107444A TW111107444A TW202236555A TW 202236555 A TW202236555 A TW 202236555A TW 111107444 A TW111107444 A TW 111107444A TW 111107444 A TW111107444 A TW 111107444A TW 202236555 A TW202236555 A TW 202236555A
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substrate
inert gas
processing space
ultraviolet curing
processing
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TW111107444A
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Chinese (zh)
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梁相熙
劉正必
崔鍾權
白種化
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南韓商Ap系統股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/06Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
    • B05D3/061Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation using U.V.
    • B05D3/065After-treatment
    • B05D3/067Curing or cross-linking the coating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05CAPPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C9/00Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
    • B05C9/08Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation
    • B05C9/14Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation the auxiliary operation involving heating or cooling
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/04Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases
    • B05D3/0466Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases the gas being a non-reacting gas
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/06Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
    • B05D3/061Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation using U.V.
    • B05D3/065After-treatment
    • B05D3/066After-treatment involving also the use of a gas
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • B05D7/02Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials to macromolecular substances, e.g. rubber
    • B05D7/04Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials to macromolecular substances, e.g. rubber to surfaces of films or sheets
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26DRYING
    • F26BDRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B21/00Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
    • F26B21/06Controlling, e.g. regulating, parameters of gas supply
    • F26B21/10Temperature; Pressure
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26DRYING
    • F26BDRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B21/00Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
    • F26B21/14Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects using gases or vapours other than air or steam, e.g. inert gases
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26DRYING
    • F26BDRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B3/00Drying solid materials or objects by processes involving the application of heat
    • F26B3/28Drying solid materials or objects by processes involving the application of heat by radiation, e.g. from the sun
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass

Abstract

The present disclosure relates to a UV curing device, substrate processing equipment, and a substrate processing method. The substrate processing method includes: preparing a substrate coated with a photocurable material; seating the substrate on a substrate support; forming a processing space for the substrate with a partial area of the substrate above the substrate; forming an inert gas atmosphere in the processing space; and irradiating UV light in the processing space in which the inert gas atmosphere is formed. As the processing space for the substrate is locally formed above the substrate, a substrate processing efficiency may be improved.

Description

紫外線固化元件、基底處理設備以及基底處理方法UV curing element, substrate treating apparatus, and substrate treating method

本公開涉及一種紫外線固化元件、基底處理設備及一種基底處理方法,且更具體來說,涉及能夠在基底上方局部地形成基底處理空間以改善基底處理效率的一種紫外線固化元件、基底處理設備及一種基底處理方法。The present disclosure relates to an ultraviolet curing element, a substrate processing device, and a substrate processing method, and more particularly, to an ultraviolet curing element, a substrate processing apparatus, and a substrate processing space capable of locally forming a substrate processing space above a substrate to improve substrate processing efficiency. Substrate treatment method.

一般來說,塗布(coating)代表在物件的表面上形成膜的特徵,目的是防止物件的表面上的損傷及外來物質貼合且調節反射率。儘管存在各種塗布方法,但UV固化塗布最近得到廣泛使用。In general, coating represents a feature of forming a film on the surface of an object for the purpose of preventing damage and foreign substances on the surface of the object from sticking and adjusting reflectivity. Although there are various coating methods, UV curing coating has been widely used recently.

UV固化塗布是以下方法:所述方法用於形成膜,使得將作為光固化材料(photocurable material)的UV塗布溶液施加在物件的表面上,且使用UV光輻照UV塗布溶液以使UV塗布溶液固化。如上所述形成的膜具有例如高光澤、高硬度及耐化學性等性質。另外,由於UV塗布溶液的固化速度比熱固化方法快,因此可改善生產率,且由於省略熱處置製程,因此可減少製程的數目。另外,由於在UV固化塗布中不使用有機溶劑,因此UV固化塗布可最小程度地影響環境,且由於使用UV光,因此可將UV固化塗布容易地施加到容易熱變形的物件上。具體來說,由於UV塗布溶液的固化速度在幾秒到幾十秒之間極快,因此UV塗布溶液對於對顯示器的領域中使用的光學膜不間斷地實行塗布是非常有利的。UV curing coating is a method for forming a film such that a UV coating solution as a photocurable material is applied on the surface of an object, and the UV coating solution is irradiated with UV light to make the UV coating solution solidified. Films formed as described above have properties such as high gloss, high hardness, and chemical resistance. In addition, since the curing speed of the UV coating solution is faster than that of the thermal curing method, productivity can be improved, and the number of processes can be reduced because the heat treatment process is omitted. In addition, since an organic solvent is not used in the UV curing coating, the UV curing coating can minimally affect the environment, and since UV light is used, the UV curing coating can be easily applied to an object easily deformed by heat. Specifically, since the curing speed of the UV coating solution is extremely fast between several seconds to several tens of seconds, the UV coating solution is very advantageous for uninterrupted coating of optical films used in the field of displays.

然而,具有200 nm或小於200 nm的波長的UV光的局限性在於:UV光吸收空氣中的氧氣以產生臭氧,且空氣中的氧氣會限制由UV塗布溶液的UV光引起的化學反應,從而降低固化密度。另外,當UV塗布溶液在光學膜的塗布期間接觸氧氣時,UV塗布溶液被氧化以使光學功能劣化。However, UV light having a wavelength of 200 nm or less is limited in that the UV light absorbs oxygen in the air to generate ozone, and the oxygen in the air limits chemical reactions caused by the UV light of the UV coating solution, thereby Reduce curing density. In addition, when the UV coating solution contacts oxygen during coating of the optical film, the UV coating solution is oxidized to degrade the optical function.

因此,在將物件裝載到腔室中之後實行UV固化塗布,且將腔室的內部轉換成氮氣氣氛以降低氧氣濃度。然而,上述方法的局限性在於:隨著物件的大小增加,腔室的大小也增加,且對腔室的內部氣氛進行轉換所需的時間增加,從而降低生產率。Therefore, UV curing coating is performed after loading the object into the chamber, and the inside of the chamber is switched to a nitrogen atmosphere to reduce the oxygen concentration. However, the above method has limitations in that as the size of the object increases, the size of the chamber also increases, and the time required to change the internal atmosphere of the chamber increases, thereby reducing productivity.

[相關技術文獻][Related technical literature]

[專利文獻][Patent Document]

(專利文獻1)KR10-1032398 B(Patent Document 1) KR10-1032398 B

本公開提供能夠通過減少基底處理時間來改善生產率的一種紫外線固化元件、基底處理設備及一種基底處理方法。The present disclosure provides an ultraviolet curing element, a substrate processing device, and a substrate processing method capable of improving productivity by reducing substrate processing time.

根據示例性實施例,一種紫外線固化元件包括:主體,被安裝成沿著待處理物件的上部部分移動;UV燈,安裝在所述主體的下部部分上;壁部,連接到所述主體的所述下部部分,以在所述待處理物件與所述主體之間形成處理空間;氣體供應部,具有安裝在所述壁部上的部分,以向所述處理空間供應惰性氣體;以及控制單元,被配置成控制所述氣體供應部的操作。According to an exemplary embodiment, an ultraviolet curing unit includes: a body mounted to move along an upper portion of an object to be treated; a UV lamp mounted on a lower portion of the body; a wall portion connected to all of the body. the lower part to form a processing space between the object to be processed and the main body; a gas supply part having a part installed on the wall part to supply an inert gas to the processing space; and a control unit, configured to control operation of the gas supply.

所述壁部可具有中空形狀,所述中空形狀具有敞開的上部部分及下部部分。The wall portion may have a hollow shape with open upper and lower portions.

所述壁部可包括在垂直方向上延伸的本體部及設置在所述本體部下方且朝向所述主體的內部彎曲的延伸部。The wall portion may include a body portion extending in a vertical direction and an extension portion disposed below the body portion and bent toward an inside of the body.

所述壁部可朝向所述主體的內部及外部的至少一個側傾斜。The wall portion may be inclined toward at least one side of the inside and outside of the body.

所述氣體供應部可包括:噴嘴,安裝在所述壁部的內表面上,以將氣體注入到所述空間;氣體供應管道,連接到所述噴嘴,以將所述氣體供應到所述噴嘴;以及閥,安裝在所述氣體供應管道上。The gas supply part may include: a nozzle installed on an inner surface of the wall part to inject gas into the space; a gas supply pipe connected to the nozzle to supply the gas to the nozzle ; and a valve installed on the gas supply pipeline.

所述氣體供應部可還包括輔助噴嘴,所述輔助噴嘴安裝在所述壁部的外表面上,以在垂直方向上注入所述氣體。The gas supply part may further include an auxiliary nozzle installed on an outer surface of the wall part to inject the gas in a vertical direction.

所述紫外線固化元件可還包括濃度計,所述濃度計安裝在所述壁部上,以對所述處理空間中的氧氣濃度進行測量。The ultraviolet curing unit may further include a concentration meter installed on the wall to measure an oxygen concentration in the processing space.

所述濃度計可被設置成低於所述噴嘴。The concentration meter may be positioned below the nozzle.

所述控制單元可使用所述濃度計中測量的結果來控制所述閥的操作。The control unit may control the operation of the valve using the result measured in the concentration meter.

根據另一示例性實施例,基底處理設備包括:基底支撐單元,被配置成支撐上面施加有光固化材料的基底;以及上述紫外線固化元件,且所述紫外線固化元件安裝在所述基底支撐單元上方。According to another exemplary embodiment, a substrate processing apparatus includes: a substrate supporting unit configured to support a substrate on which a photocurable material is applied; and the above-mentioned ultraviolet curing element, and the ultraviolet curing element is installed above the substrate supporting unit .

所述基底處理設備可還包括溫度計,所述溫度計安裝在所述壁部上,以對所述基底的溫度進行測量。The substrate processing apparatus may further include a thermometer installed on the wall to measure the temperature of the substrate.

所述基底支撐單元可包括:基底支撐件,被配置成支撐設置在所述基底支撐件上的所述基底;以及冷卻裝置,被配置成對所述基底支撐件的溫度進行調節,且所述控制單元可使用所述溫度計中測量的結果來控制所述冷卻裝置的操作。The substrate support unit may include: a substrate support configured to support the substrate disposed on the substrate support; and a cooling device configured to adjust a temperature of the substrate support, and the The control unit may use the result measured in the thermometer to control the operation of the cooling device.

所述壁部可與所述基底支撐件間隔開。The wall portion may be spaced apart from the substrate support.

根據又一示例性實施例,一種基底處理方法包括:製備塗布有光固化材料的基底;將所述基底安置在基底支撐件上;在所述基底上方使用所述基底的局部區域形成用於所述基底的處理空間;在所述處理空間中形成惰性氣體氣氛;以及在其中形成有所述惰性氣體氣氛的所述處理空間中輻照UV光。According to yet another exemplary embodiment, a substrate processing method includes: preparing a substrate coated with a photocurable material; placing the substrate on a substrate support; forming an inert gas atmosphere in the processing space; and irradiating UV light in the processing space in which the inert gas atmosphere is formed.

所述輻照所述UV光可包括移動其中形成有所述惰性氣體氣氛的所述處理空間。The irradiating the UV light may include moving the processing space in which the inert gas atmosphere is formed.

所述形成所述惰性氣體氣氛及所述輻照所述UV光中的至少一者可包括對所述處理空間中的氧氣濃度進行測量。At least one of the forming the inert gas atmosphere and the irradiating the UV light may include measuring an oxygen concentration in the processing space.

所述形成所述惰性氣體氣氛可包括向所述處理空間供應惰性氣體,且所述形成所述惰性氣體氣氛及所述輻照所述UV光中的至少一者可包括根據所測量的所述氧氣濃度對被供應到所述處理空間的所述惰性氣體的流動速率進行調節。The forming the inert gas atmosphere may include supplying an inert gas to the processing space, and at least one of forming the inert gas atmosphere and irradiating the UV light may include based on the measured The oxygen concentration regulates the flow rate of the inert gas supplied to the process space.

所述移動其中形成有所述惰性氣體氣氛的所述處理空間可包括相對於其中形成有所述惰性氣體氣氛的所述處理空間的移動方向而以不同方式對被供應到前側的惰性氣體的流動速率與被供應到後側的惰性氣體的流動速率進行調節。The moving of the processing space in which the inert gas atmosphere is formed may include differently controlling the flow of the inert gas supplied to the front side with respect to a moving direction of the processing space in which the inert gas atmosphere is formed. The rate is adjusted with the flow rate of the inert gas being supplied to the rear side.

所述形成所述惰性氣體氣氛及所述輻照所述UV光中的至少一者可包括在所述處理空間與所述基底之間形成惰性氣體幕。At least one of the forming the inert gas atmosphere and the irradiating the UV light may include forming an inert gas curtain between the processing space and the substrate.

所述輻照所述UV光可包括對所述基底的溫度進行測量。The irradiating the UV light may include measuring the temperature of the substrate.

所述輻照所述UV光可包括根據所述基底的所測量的所述溫度對所述基底支撐件的溫度進行調節。The irradiating the UV light may include adjusting the temperature of the substrate support according to the measured temperature of the substrate.

在下文中,將參照附圖詳細闡述具體實施例。然而,本公開可以許多不同的形式實施,且不應被解釋為局限於本文中陳述的實施例;相反,提供這些實施例是為了使本公開將透徹及完整,且將本發明的概念完全傳達給所屬領域中的技術人員。Hereinafter, specific embodiments will be described in detail with reference to the accompanying drawings. However, this disclosure may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concepts of the present invention to those skilled in the art.

圖1是示出根據示例性實施例的基底處理設備的示意圖,且圖2是示出根據示例性實施例的基底處理設備的放大視圖。FIG. 1 is a schematic diagram illustrating a substrate processing apparatus according to an exemplary embodiment, and FIG. 2 is an enlarged view illustrating the substrate processing apparatus according to an exemplary embodiment.

參照圖1及圖2,根據示例性實施例的基底處理設備可包括:基底支撐單元100,用於支撐設置在基底支撐單元100上的基底G;紫外線固化元件200,安裝在基底支撐單元100上以沿著基底G移動;以及控制單元300,用於控制基底支撐單元100及紫外線固化元件200中的每一者的操作。紫外線固化元件200可包括:主體220;UV燈230,安裝在主體220上,以使用UV光輻照基底支撐單元100;壁部240(壁部240a及壁部240b),設置在UV燈230的外部以環繞UV燈230且連接到主體220的下部部分以在主體220與待處理物件之間形成處理空間S;氣體供應部250,具有形成在壁部240上的部分,以將氣體注入到壁部240中;以及驅動裝置210,用於移動主體220。Referring to FIGS. 1 and 2 , a substrate processing apparatus according to an exemplary embodiment may include: a substrate support unit 100 for supporting a substrate G disposed on the substrate support unit 100; an ultraviolet curing element 200 mounted on the substrate support unit 100 to move along the substrate G; and a control unit 300 for controlling the operation of each of the substrate supporting unit 100 and the ultraviolet curing unit 200 . The ultraviolet curing member 200 may include: a main body 220; a UV lamp 230 installed on the main body 220 to irradiate the substrate supporting unit 100 with UV light; The outside is to surround the UV lamp 230 and is connected to the lower part of the main body 220 to form a processing space S between the main body 220 and the object to be processed; the gas supply part 250 has a part formed on the wall part 240 to inject gas into the wall part 240; and a driving device 210 for moving the main body 220.

基底支撐單元100可包括:基底支撐件110;以及冷卻裝置120,用於在基底支撐件110中迴圈冷卻介質。基底支撐件110是用於支撐基底G(例如顯示器(例如有機發光二極體(organic light emitting diode,OLED)及LED)的玻璃基底)的組件。基底支撐件110可具有類似於或大於基底G的面積的面積。舉例來說,基底支撐件110可具有水準方向上的寬度及厚度以及預定高度。此處,基底支撐件110可具有各種形狀(例如矩形形狀或圓形形狀)或者具有與基底G的形狀對應的形狀。基底支撐件110可將基底G安置在基底支撐件110上以支撐基底G,或者將基底G提升成與基底支撐件110的頂表面間隔開預定高度,從而支撐基底G。用於迴圈冷卻介質的流動路徑(未示出)可界定在基底支撐件110中。The substrate support unit 100 may include: a substrate support 110 ; and a cooling device 120 for circulating a cooling medium in the substrate support 110 . The substrate supporter 110 is a component for supporting a substrate G such as a glass substrate of a display (such as organic light emitting diode (OLED) and LED). The substrate support 110 may have an area similar to or greater than that of the substrate G. Referring to FIG. For example, the substrate support 110 may have a width and a thickness in a horizontal direction and a predetermined height. Here, the substrate supporter 110 may have various shapes, such as a rectangular shape or a circular shape, or a shape corresponding to the shape of the substrate G. Referring to FIG. The substrate supporter 110 may place the substrate G on the substrate supporter 110 to support the substrate G, or lift the substrate G to be spaced apart from a top surface of the substrate supporter 110 by a predetermined height, thereby supporting the substrate G. A flow path (not shown) for circulating a cooling medium may be defined in the substrate support 110 .

冷卻裝置120可沿著界定在基底支撐件110中的流動路徑迴圈冷卻介質。也就是說,冷卻裝置120可將冷卻介質供應到基底支撐件110的流動路徑且收集已通過流動路徑的冷卻介質。可不間斷地實行上述製程,以使冷卻介質沿著基底支撐件110的流動路徑迴圈。冷卻裝置120可對冷卻介質的溫度進行調節且將冷卻介質供應到基底支撐件110,或者連接到不同的外部冷卻設備(未示出)且將具有被調節到預定溫度的溫度的冷卻介質供應到基底支撐件110。冷卻裝置120可通過對冷卻介質的供應速度或供應流動速率進行調節而精確地對基底支撐件110的溫度進行調節。The cooling device 120 may circulate a cooling medium along a flow path defined in the substrate support 110 . That is, the cooling device 120 may supply the cooling medium to the flow path of the substrate support 110 and collect the cooling medium that has passed through the flow path. The above process may be performed without interruption, so that the cooling medium circulates along the flow path of the substrate support 110 . The cooling device 120 may adjust the temperature of the cooling medium and supply the cooling medium to the substrate support 110, or be connected to a different external cooling device (not shown) and supply the cooling medium having a temperature adjusted to a predetermined temperature to the Substrate support 110 . The cooling device 120 can precisely adjust the temperature of the substrate support 110 by adjusting the supply speed or supply flow rate of the cooling medium.

紫外線固化元件200可在基底支撐件110上移動,以使用UV光對由基底支撐件110的上部部分支撐的基底G進行輻照。紫外線固化元件200可在紫外線固化元件200與基底支撐件110(即基底G)之間形成惰性氣體氣氛,且使用UV光輻照基底G以使施加在基底G上的光固化材料(例如介電材料)固化。換句話說,紫外線固化元件200可在使用UV光進行輻照的區域中形成惰性氣體氣氛(例如氮氣氣氛),以限制或防止被施加到基底G上的光固化材料與氣氛中包含的氧氣發生反應。The ultraviolet curing member 200 is movable on the substrate supporter 110 to irradiate the substrate G supported by the upper portion of the substrate supporter 110 with UV light. The ultraviolet curing element 200 can form an inert gas atmosphere between the ultraviolet curing element 200 and the substrate support 110 (ie, the substrate G), and irradiate the substrate G with UV light so that the photocurable material (such as a dielectric material) applied on the substrate G material) solidifies. In other words, the ultraviolet curing element 200 can form an inert gas atmosphere (such as a nitrogen atmosphere) in the area irradiated with UV light to limit or prevent the occurrence of oxygen contained in the photocurable material applied to the substrate G and the atmosphere. reaction.

紫外線固化元件200可包括:主體220;UV燈230,安裝在主體220上以使用UV光輻照基底支撐單元100;壁部240,設置在UV燈230的外部以環繞UV燈230,且連接到主體220的下部部分以在主體220與作為待處理物件的基底G之間形成處理空間;氣體供應部250,具有形成在壁部240上的部分,以將氣體注入到壁部240中;以及驅動裝置210,用於移動主體220。另外,紫外線固化元件200可包括濃度計260,用於對在壁部240與基底G之間形成的處理空間中的氧氣濃度進行測量。The ultraviolet curing unit 200 may include: a main body 220; a UV lamp 230 installed on the main body 220 to irradiate the substrate supporting unit 100 with UV light; a wall part 240 disposed outside the UV lamp 230 to surround the UV lamp 230 and connected to The lower part of the main body 220 to form a processing space between the main body 220 and the substrate G as an object to be processed; the gas supply part 250 having a part formed on the wall part 240 to inject gas into the wall part 240; and driving A device 210 for moving a subject 220 . In addition, the ultraviolet curing unit 200 may include a concentration meter 260 for measuring the oxygen concentration in the processing space formed between the wall part 240 and the substrate G. Referring to FIG.

首先,驅動裝置210可包括:導向框架211,從基底支撐件110向上間隔開以支撐主體220;以及驅動器(未示出),用於提供用於移動主體220的動力。First, the driving device 210 may include: a guide frame 211 spaced upward from the base support 110 to support the main body 220 ; and a driver (not shown) for providing power for moving the main body 220 .

導向框架211可在基底支撐件110的延伸方向(例如,基底支撐件110的寬度方向)上延伸。驅動器213可提供用於移動主體220的動力且安裝在導向框架211或主體220上。The guide frame 211 may extend in an extending direction of the substrate support 110 (eg, a width direction of the substrate support 110 ). The driver 213 may provide power for moving the main body 220 and is installed on the guide frame 211 or the main body 220 .

主體220可支撐UV燈230及壁部240,且包含用於操作UV燈230的電子裝置(未示出)。另外,主體220可連接到驅動裝置210的導向框架211且在導向框架211的延伸方向上移動。此處,主體220可具有在一個方向上延伸的塊形狀或條形狀。當主體220具有塊形狀時,多個主體220可在一個方向上連接以具有條形狀。這是為了在與主體220的移動方向垂直交叉的方向上使用UV光輻照基底G(因為基底G具有帶有區域的板形狀),且主體220在基底G的延伸方向(例如寬度方向)上移動,以使用UV光輻照基底G。也就是說,在主體220被移動的同時,使用UV光輻照整個基底G。The main body 220 may support the UV lamp 230 and the wall portion 240 and include electronics (not shown) for operating the UV lamp 230 . In addition, the main body 220 may be connected to the guide frame 211 of the driving device 210 and move in the extending direction of the guide frame 211 . Here, the body 220 may have a block shape or a bar shape extending in one direction. When the body 220 has a block shape, a plurality of bodies 220 may be connected in one direction to have a bar shape. This is to irradiate the base G with UV light in a direction perpendicular to the moving direction of the main body 220 (because the base G has a plate shape with regions), and the main body 220 is in the extending direction of the base G (for example, the width direction) Move to irradiate substrate G with UV light. That is, while the main body 220 is moved, the entire substrate G is irradiated with UV light.

UV燈230可安裝在主體220的下部部分處,以使用UV光輻照基底支撐件110。此處,UV燈230可包括各種類型的燈,例如燈泡型、條形燈及LED燈,只要所述燈發射UV光即可。A UV lamp 230 may be installed at a lower portion of the body 220 to irradiate the substrate support 110 with UV light. Here, the UV lamp 230 may include various types of lamps such as a bulb type, a bar lamp, and an LED lamp as long as the lamp emits UV light.

壁部240可連接到主體220的下部部分,以在垂直方向上延伸。壁部240可連接到主體220以環繞UV燈230。壁部240可具有中空形狀,在中空形狀中,上部部分及下部部分敞開以形成光路,使得從UV燈230發射的UV光輻照基底G。另外,壁部240可用作暫時容置惰性氣體的緩衝器,以在基底G被處理的同時在基底G與壁部240之間形成惰性氣體氣氛。壁部240可被形成為成一體的形狀或者由多個零件組裝而成的總成。The wall part 240 may be connected to a lower portion of the main body 220 to extend in a vertical direction. The wall part 240 may be connected to the main body 220 to surround the UV lamp 230 . The wall part 240 may have a hollow shape in which upper and lower parts are opened to form a light path such that the UV light emitted from the UV lamp 230 irradiates the substrate G. Referring to FIG. In addition, the wall portion 240 may serve as a buffer temporarily containing an inert gas to form an inert gas atmosphere between the substrate G and the wall portion 240 while the substrate G is being processed. The wall portion 240 may be formed in a one-piece shape or an assembly assembled from multiple parts.

壁部240可連接到主體220,以在主體220與位於主體220下方的基底G之間形成基底G的處理空間S。壁部240可在主體220下方(例如,在主體220與基底支撐件110之間或在UV燈230與基底G之間)形成處理空間。壁部240可具有“L”形狀,所述“L”形狀包括在垂直方向上延伸的本體部及朝向主體220的內部或處理空間S彎曲的延伸部。此處,當壁部240包括延伸部時,可獲得被供應到處理空間S的氮氣暫時停滯而不是由延伸部直接排放的效果。作為另外一種選擇,壁部240可具有僅包括本體部的“I”形狀或者其中至少一部分是彎曲表面的形狀。然而,示例性實施例不局限於壁部240的形狀,只要用於形成惰性氣體氣氛(例如,氮氣氣氛)的處理空間形成在基底G上方即可。The wall part 240 may be connected to the main body 220 to form a processing space S of the substrate G between the main body 220 and the substrate G under the main body 220 . The wall part 240 may form a processing space under the main body 220 (eg, between the main body 220 and the substrate supporter 110 or between the UV lamp 230 and the substrate G). The wall part 240 may have an 'L' shape including a body part extending in a vertical direction and an extension part bent toward the inside of the main body 220 or the processing space S. Referring to FIG. Here, when the wall portion 240 includes the extension, an effect that the nitrogen gas supplied to the processing space S is temporarily stagnated instead of being directly discharged by the extension may be obtained. Alternatively, the wall portion 240 may have an "I" shape including only a body portion or a shape in which at least a portion is a curved surface. However, exemplary embodiments are not limited to the shape of the wall part 240 as long as a processing space for forming an inert gas atmosphere (eg, a nitrogen atmosphere) is formed above the substrate G. Referring to FIG.

壁部240可具有各種形狀。The wall part 240 may have various shapes.

圖3是示出紫外線固化元件的經修改實例的視圖。Fig. 3 is a view showing a modified example of an ultraviolet curing element.

壁部240可連接到主體220,以具有如圖3的(a)到圖3的(c)中所示的對稱形狀,或者具有如圖3的(d)中所示的不對稱形狀。舉例來說,當壁部240對稱地連接到主體220的兩個側時,壁部240可連接到主體220,從而不傾斜、朝向主體220的內部傾斜、或者朝向主體220的外部傾斜。另外,當壁部240不對稱地連接到主體220的所述兩個側時,連接到主體220的所述兩個側的壁部240中的至少一者可朝向主體220的內部或外部傾斜。此處,當壁部240連接到主體220從而傾斜時,壁部240可優選地相對於主體220的移動方向(例如,在發射UV光的同時的移動方向)在向前方向上傾斜。這是為了在UV光輻照基底G之前,通過使得氮氣能夠首先接觸基底G來移除保留在基底G上的氧氣。優選地,在主體220使用UV光輻照基底G以使光固化材料固化的同時,壁部240可連接到主體220且相對於主體220的移動方向在向前方向上傾斜。The wall part 240 may be connected to the main body 220 to have a symmetrical shape as shown in FIGS. 3( a ) to 3 ( c ), or to have an asymmetrical shape as shown in FIG. 3( d ). For example, when the wall portion 240 is symmetrically connected to both sides of the body 220 , the wall portion 240 may be connected to the body 220 so as not to be inclined, to be inclined toward the inside of the body 220 , or to be inclined toward the outside of the body 220 . In addition, when the wall part 240 is asymmetrically connected to the two sides of the main body 220 , at least one of the wall parts 240 connected to the two sides of the main body 220 may be inclined toward the inside or outside of the main body 220 . Here, when the wall part 240 is connected to the main body 220 so as to be inclined, the wall part 240 may preferably be inclined in a forward direction with respect to a moving direction of the main body 220 (eg, a moving direction while emitting UV light). This is to remove oxygen remaining on the substrate G by enabling nitrogen gas to contact the substrate G first before the UV light irradiates the substrate G. Preferably, the wall part 240 may be connected to the main body 220 and be inclined in a forward direction with respect to a moving direction of the main body 220 while the main body 220 irradiates the substrate G with UV light to cure the photo-curable material.

氣體供應部250可包括:噴嘴253,形成在壁部240中;氣體記憶體251,用於存儲被供應到噴嘴253的惰性氣體;氣體供應管道(未示出),連接噴嘴253與氣體記憶體251;以及閥255,安裝在氣體供應管道上以對惰性氣體的流動速率進行調節。The gas supply part 250 may include: a nozzle 253 formed in the wall part 240; a gas memory 251 for storing an inert gas supplied to the nozzle 253; a gas supply pipe (not shown) connecting the nozzle 253 and the gas memory 251; and a valve 255 installed on the gas supply pipeline to adjust the flow rate of the inert gas.

噴嘴253可形成在壁部240的內表面上,以將惰性氣體注入到處理空間S中。噴嘴253可具有狹縫形狀,以在基底G的其中主體220所延伸的厚度方向上延伸,或者多個噴嘴253可在基底G的其中主體220所延伸的厚度方向上彼此間隔開。A nozzle 253 may be formed on an inner surface of the wall part 240 to inject an inert gas into the processing space S. As shown in FIG. The nozzle 253 may have a slit shape to extend in the thickness direction of the substrate G in which the body 220 extends, or a plurality of nozzles 253 may be spaced apart from each other in the thickness direction of the substrate G in which the body 220 extends.

氣體供應管道可具有由可拉伸或柔性材料製成的至少一部分,從而不影響主體220的移動。閥255可安裝在氣體供應管道上,以對被供應到噴嘴253的惰性氣體的流動速率進行調節。The gas supply pipe may have at least a portion made of stretchable or flexible material so as not to affect the movement of the main body 220 . A valve 255 may be installed on the gas supply pipe to adjust the flow rate of the inert gas supplied to the nozzle 253 .

另外,可在壁部240中形成用於向噴嘴253供應惰性氣體的通道。通道可被形成為設置在整個壁部240之上的一個連接本體,或者被劃分成多個通道。舉例來說,可相對於主體220的移動方向將通道劃分成在前側處設置在壁部240中的通道及在後側處設置在壁部240中的通道。在這種情況下,氣體供應管道可獨立地連接到相對於主體220的移動方向設置在前側處的通道及設置在後側處的通道中的每一者,且可在每一氣體供應管道上安裝閥。另外,可以不同方式對被供應到形成於設置在前側處的壁部240中的通道與形成於設置在後側處的壁部240中的通道中的每一者的惰性氣體的流動速率進行調節。In addition, a passage for supplying an inert gas to the nozzle 253 may be formed in the wall part 240 . The channel may be formed as one connection body provided over the entire wall portion 240, or divided into a plurality of channels. For example, the channel may be divided into a channel provided in the wall portion 240 at the front side and a channel provided in the wall portion 240 at the rear side with respect to the moving direction of the main body 220 . In this case, the gas supply pipe can be independently connected to each of the passage provided at the front side and the passage provided at the rear side with respect to the moving direction of the main body 220, and can be connected to each of the gas supply pipes. Install the valve. In addition, the flow rate of the inert gas supplied to each of the passage formed in the wall portion 240 provided at the front side and the passage formed in the wall portion 240 provided at the rear side may be adjusted in a different manner. .

濃度計260可對形成在壁部240與基底G之間的處理空間S中的氧氣濃度進行測量。濃度計260可安裝在壁部240的內表面上或者安裝在主體220的下部部分處。由於當塗布有光固化材料的基底G被固化時,氧氣會影響光固化材料,因此濃度計260可優選地安裝在鄰近塗布有光固化材料的基底G的側處。舉例來說,濃度計260可安裝在比噴嘴235的位置低的位置處。The concentration meter 260 may measure the oxygen concentration in the processing space S formed between the wall part 240 and the substrate G. Referring to FIG. The concentration meter 260 may be installed on the inner surface of the wall part 240 or at the lower part of the main body 220 . Since oxygen may affect the photo-curable material when the photo-curable material-coated substrate G is cured, the concentration meter 260 may preferably be installed at a side adjacent to the photo-curable material-coated substrate G. For example, the concentration meter 260 may be installed at a position lower than that of the nozzle 235 .

基底支撐單元100可還包括溫度計130,用於對基底支撐件110的溫度進行測量。溫度計130可包括以非接觸方式對基底G的溫度進行測量的紅外溫度計或高溫計。溫度計130可安裝在壁部240上,從而以非接觸方式對基底G的溫度進行測量。舉例來說,溫度計130可安裝在壁部240的面對基底支撐件110的底表面上,且與基底G間隔。溫度計130可安裝在除了壁部240的底表面之外的各種位置處,只要溫度計以非接觸方式對基底G的溫度進行測量即可。另外,可沿著主體220的延伸方向(例如,基底G的厚度方向)安裝多個溫度計130,以在使用UV光進行輻照的區域中對基底G的溫度進行測量。The substrate support unit 100 may further include a thermometer 130 for measuring the temperature of the substrate support 110 . The thermometer 130 may include an infrared thermometer or a pyrometer that measures the temperature of the substrate G in a non-contact manner. The thermometer 130 may be installed on the wall part 240 to measure the temperature of the substrate G in a non-contact manner. For example, the thermometer 130 may be installed on the bottom surface of the wall part 240 facing the substrate supporter 110 and spaced from the substrate G. Referring to FIG. The thermometer 130 may be installed at various locations other than the bottom surface of the wall portion 240 as long as the thermometer measures the temperature of the substrate G in a non-contact manner. In addition, a plurality of thermometers 130 may be installed along an extending direction of the body 220 (eg, a thickness direction of the substrate G) to measure the temperature of the substrate G in an area irradiated with UV light.

控制單元300可控制所有基底處理設備(例如冷卻裝置120、驅動器213、UV燈230、閥255、濃度計260及溫度計130)的整體操作。具體來說,控制單元300可使用由濃度計260測量的氧氣濃度來控制閥255的操作。另外,控制單元300可使用基底G的在溫度計130中測量的溫度來控制冷卻裝置120的操作。The control unit 300 can control the overall operation of all substrate processing equipment (eg, the cooling device 120 , the driver 213 , the UV lamp 230 , the valve 255 , the concentration meter 260 and the thermometer 130 ). Specifically, the control unit 300 may control the operation of the valve 255 using the oxygen concentration measured by the concentration meter 260 . In addition, the control unit 300 may control the operation of the cooling device 120 using the temperature of the substrate G measured in the thermometer 130 .

圖4是示出紫外線固化元件的另一經修改實例的視圖。Fig. 4 is a view showing another modified example of an ultraviolet curing element.

參照圖4,紫外線固化元件可還包括輔助噴嘴257,輔助噴嘴257安裝在壁部240中且將惰性氣體到注入處理空間S的外部。輔助噴嘴257可安裝在壁部240的外表面上以朝向基底G注入惰性氣體。此處,輔助噴嘴257可安裝在壁部240中,以沿著基底G的厚度方向注入氣體。因此,輔助噴嘴257可在壁部240與基底支撐件110之間或者在壁部240與基底G之間形成惰性氣體幕(例如氮氣幕)。當如上所述形成氮氣幕時,氮氣通過噴嘴253注入到處理空間S且滯留在處理空間S中的時間可增加,且從外部引入到處理空間S中的空氣可被阻擋。因此,可恒定地維持處理空間S的內部氣氛。Referring to FIG. 4 , the ultraviolet curing unit may further include an auxiliary nozzle 257 installed in the wall portion 240 and injecting an inert gas to the outside of the processing space S. Referring to FIG. The auxiliary nozzle 257 may be installed on the outer surface of the wall part 240 to inject inert gas toward the substrate G. Referring to FIG. Here, an auxiliary nozzle 257 may be installed in the wall part 240 to inject gas along the thickness direction of the substrate G. Referring to FIG. Accordingly, the auxiliary nozzle 257 may form an inert gas curtain (eg, a nitrogen curtain) between the wall portion 240 and the substrate support 110 or between the wall portion 240 and the substrate G. Referring to FIG. When the nitrogen curtain is formed as described above, the nitrogen gas injected into the processing space S through the nozzle 253 and staying in the processing space S may increase, and air introduced into the processing space S from the outside may be blocked. Therefore, the internal atmosphere of the processing space S can be maintained constantly.

儘管在示例性實施例中,基底處理設備不包括腔室,但腔室可用於收集朝向基底注入的氮氣的目的,而不是用於控制對基底進行處理的氣氛的目的。Although in an exemplary embodiment, the substrate processing apparatus does not include a chamber, the chamber may be used for the purpose of collecting nitrogen gas injected toward the substrate, not for the purpose of controlling the atmosphere for processing the substrate.

在下文中,將闡述根據示例性實施例的基底處理方法。Hereinafter, a substrate processing method according to an exemplary embodiment will be explained.

根據示例性實施例的基底處理方法可包括:製備塗布有光固化材料的基底;將基底安置在基底支撐件上;在基底上方形成與基底的局部區域連通的處理空間;在處理空間中形成氮氣氣氛;以及在其中形成有氮氣氣氛的處理空間中使用UV光輻照基底。The substrate processing method according to an exemplary embodiment may include: preparing a substrate coated with a photo-curable material; placing the substrate on a substrate support; forming a processing space above the substrate in communication with a local area of the substrate; forming a nitrogen gas in the processing space atmosphere; and irradiating the substrate with UV light in the processing space in which the nitrogen atmosphere is formed.

首先,可製備塗布有光固化材料的基底G。此處,基底G可包括用於顯示器(例如OLED 及LCD)的玻璃基底,且光固化材料可包括介電材料。然而,示例性實施例不局限於基底及光固化材料。First, a substrate G coated with a photocurable material may be prepared. Here, the substrate G may include a glass substrate for displays such as OLEDs and LCDs, and the photo-curable material may include a dielectric material. However, exemplary embodiments are not limited to substrates and photocurable materials.

當製備好基底G時,可將基底G安置在基底支撐件110上。此處,基底G可以接觸方式安置在基底支撐件110上,或者通過從基底支撐件110注入空氣而被提升成與基底支撐件110間隔開預定距離。如後者一樣將基底G提升到基底支撐件110上方的原因是,當基底G由光透射材料製成時,在通過使用UV光輻照基底G而使光固化材料固化的同時,當基底支撐件110的表面的圖案或拓撲被轉移到光固化材料時,可產生摩爾紋(moire)。When the substrate G is prepared, the substrate G may be placed on the substrate support 110 . Here, the substrate G may be placed on the substrate support 110 in a contact manner, or lifted to be spaced apart from the substrate support 110 by a predetermined distance by injecting air from the substrate support 110 . The reason for lifting the substrate G above the substrate support 110 like the latter is that when the substrate G is made of a light-transmitting material, while the photocurable material is cured by irradiating the substrate G with UV light, the substrate support When the pattern or topology of the surface of 110 is transferred to the photocurable material, moire can be generated.

當將基底G安置在基底支撐件110上時,可將紫外線固化元件的主體220移動到基底G的一個側(例如基底G的左側)。此後,可通過利用控制單元300的控制來控制氣體供應部250的閥255的操作而將存儲在氣體記憶體251中的氮氣供應到噴嘴253。When the substrate G is placed on the substrate support 110, the body 220 of the ultraviolet curing element may be moved to one side of the substrate G (eg, the left side of the substrate G). Thereafter, the nitrogen gas stored in the gas memory 251 may be supplied to the nozzle 253 by controlling the operation of the valve 255 of the gas supply part 250 through the control of the control unit 300 .

當供應氮氣時,可通過噴嘴253將氮氣注入到壁部240中的處理空間S中。當如上所述將氮氣供應到處理空間S中時,可通過壁部240與基底G之間的空間將存在於處理空間S中的空氣排放到外部,且可將處理空間S的內部轉換成氮氣氣氛。When the nitrogen gas is supplied, the nitrogen gas may be injected into the processing space S in the wall part 240 through the nozzle 253 . When nitrogen gas is supplied into the processing space S as described above, the air present in the processing space S can be exhausted to the outside through the space between the wall portion 240 and the substrate G, and the inside of the processing space S can be converted into nitrogen gas. atmosphere.

可通過如上所述將氮氣連續地注入到處理空間中來維持處理空間S中的氮氣氣氛,且可操作UV燈230以使用UV光輻照基底G。另外,可使用輔助噴嘴257從處理空間S的外部(即,壁部240的外部)朝向基底注入氮氣。此處,輔助噴嘴257可通過朝向基底G注入氣體而在壁部240與基底G之間形成氮氣幕。因此,通過噴嘴253被注入到處理空間S中的氮氣可通過氮氣幕暫時滯留在處理空間S中。另外,被引入到處理空間S中的空氣可被氮氣幕阻擋,以平穩地維持基底G的使用UV光進行輻照的區域中的氮氣氣氛。The nitrogen atmosphere in the processing space S may be maintained by continuously injecting nitrogen into the processing space as described above, and the UV lamp 230 may be operated to irradiate the substrate G with UV light. In addition, nitrogen gas may be injected toward the substrate from the outside of the processing space S (ie, the outside of the wall part 240 ) using the auxiliary nozzle 257 . Here, the auxiliary nozzle 257 may form a nitrogen gas curtain between the wall part 240 and the substrate G by injecting gas toward the substrate G. Referring to FIG. Accordingly, the nitrogen gas injected into the processing space S through the nozzle 253 may temporarily stay in the processing space S through the nitrogen curtain. In addition, air introduced into the processing space S may be blocked by a nitrogen curtain to smoothly maintain a nitrogen atmosphere in a region of the substrate G irradiated with UV light.

另外,可在使用驅動裝置210將紫外線固化元件200的主體220移動到基底G的另一個側(例如,右側)時使被施加在基底G上的光固化材料固化。此處,可在壁部240與基底G之間排放從噴嘴253注入的氮氣,以移除保留在基底G的表面上的空氣或氧氣。當移動主體220時,處理空間S可沿著主體220的移動方向移動,且光固化材料可在經移動的處理空間S中被連續地固化。In addition, the photo-curable material applied on the base G may be cured while the main body 220 of the ultraviolet curing member 200 is moved to the other side (eg, the right side) of the base G using the driving device 210 . Here, nitrogen gas injected from the nozzle 253 may be discharged between the wall portion 240 and the substrate G to remove air or oxygen remaining on the surface of the substrate G. Referring to FIG. When the main body 220 is moved, the processing space S may be moved along the moving direction of the main body 220, and the photo-curable material may be continuously cured in the moved processing space S. Referring to FIG.

此後,當使光固化材料固化時,可將基底G轉移到下一個處理位置。另外,可通過使用控制單元300對閥255進行操作來阻擋氮氣的供應,且可將主體220移動到基底支撐件110的一個側,用於基底G的後續處理。Thereafter, when the photo-curable material is cured, the substrate G may be transferred to the next processing position. In addition, the supply of nitrogen gas may be blocked by operating the valve 255 using the control unit 300 , and the main body 220 may be moved to one side of the substrate supporter 110 for subsequent processing of the substrate G. Referring to FIG.

在如上所述使光固化材料固化的同時,可對處理空間S中的氧氣濃度進行測量。此處,可在通過對閥255進行操作而將氮氣供應到處理空間S之後連續地對氧氣濃度進行測量,直到光固化材料被完全固化(即,直到基底G被完全處理)。While curing the photo-curable material as described above, the oxygen concentration in the processing space S may be measured. Here, the oxygen concentration may be continuously measured after nitrogen gas is supplied to the processing space S by operating the valve 255 until the photo-curable material is completely cured (ie, until the substrate G is completely processed).

由於在沒有單獨的腔室的條件下在大氣壓下對基底進行處理,因此處理空間S中的氧氣濃度可能不會被控制為“0”。因此,可通過將氧氣濃度控制在不影響使光固化材料固化的程度(例如等於或小於1,000 ppm的程度)而對基底進行處理。當氧氣濃度大於1,000 ppm時,UV光可吸收氧氣以產生臭氧或使光固化材料氧化,且可通過在處理空間S中產生的氣流而在基底G上所形成的膜上形成摩爾紋。因此,可優選地將處理空間S中的氧氣濃度控制成等於或小於1,000 ppm。Since the substrate is processed under atmospheric pressure without a separate chamber, the oxygen concentration in the processing space S may not be controlled to be "0". Accordingly, the substrate can be treated by controlling the oxygen concentration to a level that does not interfere with curing the photocurable material, such as a level equal to or less than 1,000 ppm. When the oxygen concentration is greater than 1,000 ppm, the UV light can absorb oxygen to generate ozone or oxidize the photo-curable material, and can form moire on the film formed on the substrate G by the airflow generated in the processing space S. Therefore, the oxygen concentration in the processing space S may preferably be controlled to be equal to or less than 1,000 ppm.

可使用濃度計260連續地對處理空間S中的氧氣濃度進行測量,且可在對基底G進行處理的同時將處理空間S中的氧氣濃度維持成等於或小於1,000 ppm。此處,當由濃度計260測量的氧氣濃度等於或大於1,000 ppm時,控制單元300可控制閥255的操作,以增加通過噴嘴253注入的氮氣的流動速率。另一方面,當由濃度計260測量的氧氣濃度等於或小於1,000 ppm時,可維持通過噴嘴253注入的氮氣的流動速率。The oxygen concentration in the processing space S may be continuously measured using the concentration meter 260, and may be maintained to be equal to or less than 1,000 ppm while the substrate G is being processed. Here, when the oxygen concentration measured by the concentration meter 260 is equal to or greater than 1,000 ppm, the control unit 300 may control the operation of the valve 255 to increase the flow rate of nitrogen gas injected through the nozzle 253 . On the other hand, when the oxygen concentration measured by the concentration meter 260 is equal to or less than 1,000 ppm, the flow rate of nitrogen gas injected through the nozzle 253 may be maintained.

另外,可在對基底G進行處理的同時控制基底支撐件110的溫度。也就是說,基底G及基底支撐件110可能被UV光過度加熱。因此,當使用溫度計130對基底G的溫度進行測量,且根據所測量的溫度來控制冷卻裝置120的操作時,可控制在基底支撐件110中迴圈的冷卻介質的迴圈速度或流動速率,以對基底支撐件110的溫度進行調節。In addition, the temperature of the substrate support 110 may be controlled while the substrate G is being processed. That is, the substrate G and the substrate support 110 may be overheated by the UV light. Therefore, when the temperature of the substrate G is measured using the thermometer 130, and the operation of the cooling device 120 is controlled according to the measured temperature, the circulation speed or flow rate of the cooling medium circulating in the substrate support 110 can be controlled, to adjust the temperature of the substrate support 110 .

在下文中,將闡述用於對根據示例性實施例的基底處理方法的基底處理性能進行驗證的實驗的結果。Hereinafter, the results of experiments for verifying the substrate treating performance of the substrate treating method according to the exemplary embodiment will be set forth.

將塗布有光固化材料的基底安置在基底支撐件上,且在使用紫外線固化元件在基底上方局部地形成氮氣氣氛的同時使用UV光輻照光固化材料。另外,在紫外線固化元件的壁部中所形成的空間中測量氧氣濃度。此處,對達到1000 ppm、800 ppm、600 ppm、500 ppm、300 ppm及200 ppm中的每一者的氧氣濃度所需的時間進行測量。The substrate coated with the photocurable material was placed on a substrate support, and the photocurable material was irradiated with UV light while locally forming a nitrogen atmosphere over the substrate using an ultraviolet curing element. In addition, the oxygen concentration was measured in the space formed in the wall portion of the ultraviolet curing element. Here, the time required to reach the oxygen concentration of each of 1000 ppm, 800 ppm, 600 ppm, 500 ppm, 300 ppm, and 200 ppm was measured.

以下表1示出通過對氧氣濃度達到預設濃度所需的時間進行測量而獲得的結果。Table 1 below shows the results obtained by measuring the time required for the oxygen concentration to reach a preset concentration.

[表1]    氧氣濃度(ppm) 1000 800 600 500 300 200 實驗性實例1 12 13 13 16 40 52 實驗性實例2 11 14 20 22 41 48 實驗性實例3 9 14 20 23 33 45 實驗性實例4 10 15 19 25 31 37 [Table 1] Oxygen concentration (ppm) 1000 800 600 500 300 200 Experimental Example 1 12 13 13 16 40 52 Experimental Example 2 11 14 20 twenty two 41 48 Experimental Example 3 9 14 20 twenty three 33 45 Experimental Example 4 10 15 19 25 31 37

應理解,氧氣濃度達到1000 ppm所需的時間介於從9秒到12秒的範圍內(平均為10.5秒),在所述時間內,氧氣濃度幾乎不影響UV光對光固化材料的固化。當僅在使用UV光進行輻照的區域上局部地形成氮氣氣氛時,處理時間可比現有技術減少得多,在現有技術中,將腔室的整個內部轉換成氮氣氣氛花費約30分鐘的時間。另外,可知道,通過在上述方法中使光固化材料固化且對固化的膜的品質進行測試而獲得的結果表現出與通過相關技術固化的膜的品質相同或相似的品質。It should be understood that the time required for the oxygen concentration to reach 1000 ppm ranges from 9 seconds to 12 seconds (10.5 seconds on average), during which time the oxygen concentration hardly affects the curing of the photocurable material by UV light. When the nitrogen atmosphere is locally formed only on the region irradiated with UV light, the processing time can be much reduced compared to the prior art, in which it takes about 30 minutes to switch the entire interior of the chamber to the nitrogen atmosphere. In addition, it can be known that the results obtained by curing the photocurable material in the above method and testing the quality of the cured film showed the same or similar quality as that of the film cured by the related art.

根據示例性實施例,施加在基底上的光固化材料的固化製程可在氣氛中實行。也就是說,可在紫外線固化元件與基底之間局部地形成氮氣氣氛。由於在紫外線固化元件與基底之間局部地形成氮氣氣氛,且輻照UV光,因此可防止UV光及光固化材料接觸氧氣。因此,可減少對用於實行固化製程的腔室的內部氣氛進行轉換所需的時間,以改善製程效率及基底的生產率。另外,由於固化製程可在沒有單獨的腔室的條件下實行,因此可節省製備腔室的成本或腔室的維護成本。According to an exemplary embodiment, the curing process of the photo-curable material applied on the substrate may be performed in an atmosphere. That is, a nitrogen atmosphere may be locally formed between the ultraviolet curing element and the substrate. Since a nitrogen atmosphere is locally formed between the ultraviolet curing element and the substrate, and UV light is irradiated, the UV light and the photocurable material can be prevented from being exposed to oxygen. Therefore, the time required for switching the internal atmosphere of the chamber for performing the curing process can be reduced to improve process efficiency and substrate productivity. In addition, since the curing process can be performed without a separate chamber, the cost of preparing the chamber or the maintenance cost of the chamber can be saved.

如上所述,儘管已參照本發明的優選實施例具體示出及闡述本發明,但所屬領域中的技術人員將理解,在不背離由申請專利範圍界定的本發明的精神及範圍的條件下,可在形式及細節上進行各種改變。因此,本發明的範圍不是由本發明的詳細說明來界定,而是由申請專利範圍來界定,且範圍內的所有差異將被解釋為包括在本發明中。As mentioned above, although the present invention has been specifically shown and described with reference to the preferred embodiments of the present invention, those skilled in the art will understand that, without departing from the spirit and scope of the present invention defined by the patent claims, Various changes may be made in form and detail. Therefore, the scope of the invention is defined not by the detailed description of the invention but by the scope of patent application, and all differences within the scope will be construed as being included in the present invention.

100:基底支撐單元 110:基底支撐件 120:冷卻裝置 130:溫度計 200:紫外線固化元件 210:驅動裝置 211:導向框架 213:驅動器 220:主體 230:UV燈 240、240a、240b:壁部 250:氣體供應部 251:氣體記憶體 253:噴嘴 255:閥 257:輔助噴嘴 260:濃度計 300:控制單元 G:基底 S:處理空間 100: base support unit 110: base support 120: cooling device 130: Thermometer 200: UV curing components 210: drive device 211: guide frame 213: drive 220: subject 230:UV lamp 240, 240a, 240b: wall 250: Gas supply department 251: gas memory 253:Nozzle 255: valve 257: Auxiliary nozzle 260: concentration meter 300: control unit G: base S: processing space

根據以下結合附圖的說明,可更詳細地理解示例性實施例,在附圖中: 圖1是示出根據示例性實施例的基底處理設備的示意圖。 圖2是示出根據示例性實施例的基底處理設備的放大視圖。 圖3是示出紫外線固化元件的經修改實例的視圖。 圖4是示出紫外線固化元件的另一經修改實例的視圖。 圖5是代表當使用根據示例性實施例的基底處理設備對基底進行處理時,腔室中的氧氣濃度的曲線圖。 A more detailed understanding of the exemplary embodiments can be had from the following description taken in conjunction with the accompanying drawings, in which: FIG. 1 is a schematic diagram illustrating a substrate processing apparatus according to an exemplary embodiment. FIG. 2 is an enlarged view illustrating a substrate processing apparatus according to an exemplary embodiment. Fig. 3 is a view showing a modified example of an ultraviolet curing element. Fig. 4 is a view showing another modified example of an ultraviolet curing element. FIG. 5 is a graph representing an oxygen concentration in a chamber when a substrate is processed using the substrate processing apparatus according to an exemplary embodiment.

100:基底支撐單元 100: base support unit

110:基底支撐件 110: base support

120:冷卻裝置 120: cooling device

130:溫度計 130: Thermometer

200:紫外線固化元件 200: UV curing components

210:驅動裝置 210: drive device

211:導向框架 211: guide frame

213:驅動器 213: drive

220:主體 220: subject

230:UV燈 230:UV lamp

240、240a、240b:壁部 240, 240a, 240b: wall

250:氣體供應部 250: Gas supply department

251:氣體記憶體 251: gas memory

253:噴嘴 253:Nozzle

255:閥 255: valve

260:濃度計 260: concentration meter

300:控制單元 300: control unit

G:基底 G: base

S:處理空間 S: processing space

Claims (21)

一種紫外線固化元件,包括: 主體,被安裝成沿著待處理物件的上部部分移動; 紫外燈,安裝在所述主體的下部部分上; 壁部,連接到所述主體的下部部分,以在所述待處理物件與所述主體之間形成處理空間; 氣體供應部,具有安裝在所述壁部上的部分,以向所述處理空間供應惰性氣體;以及 控制單元,被配置成控制所述氣體供應部的操作。 A UV curing element comprising: a body mounted to move along the upper part of the object to be processed; an ultraviolet lamp mounted on the lower portion of the body; a wall connected to a lower portion of the body to form a processing space between the object to be processed and the body; a gas supply part having a part installed on the wall part to supply an inert gas to the processing space; and A control unit configured to control the operation of the gas supply. 如請求項1所述的紫外線固化元件,其中所述壁部具有中空形狀,所述中空形狀具有敞開的上部部分及下部部分。The ultraviolet curing element according to claim 1, wherein the wall portion has a hollow shape having an open upper portion and a lower portion. 如請求項2所述的紫外線固化元件,其中所述壁部包括在垂直方向上延伸的本體部及設置在所述本體部下方且朝向所述主體的內部彎曲的延伸部。The ultraviolet curing element according to claim 2, wherein the wall portion includes a body portion extending in a vertical direction and an extension portion disposed below the body portion and bent toward the inside of the body. 如請求項2所述的紫外線固化元件,其中所述壁部朝向所述主體的內部及外部的至少一個側傾斜。The ultraviolet curing element according to claim 2, wherein the wall portion is inclined toward at least one side of the interior and exterior of the body. 如請求項1所述的紫外線固化元件,其中所述氣體供應部包括: 噴嘴,安裝在所述壁部的內表面上,以將氣體注入到空間; 氣體供應管道,連接到所述噴嘴,以將所述氣體供應到所述噴嘴;以及 閥,安裝在所述氣體供應管道上。 The ultraviolet curing element as claimed in item 1, wherein the gas supply part includes: a nozzle mounted on the inner surface of the wall to inject gas into the space; a gas supply pipe connected to the nozzle to supply the gas to the nozzle; and A valve is installed on the gas supply pipeline. 如請求項5所述的紫外線固化元件,其中所述氣體供應部還包括輔助噴嘴,所述輔助噴嘴安裝在所述壁部的外表面上,以在垂直方向上注入所述氣體。The ultraviolet curing element according to claim 5, wherein the gas supply part further includes an auxiliary nozzle installed on an outer surface of the wall part to inject the gas in a vertical direction. 如請求項5所述的紫外線固化元件,更包括濃度計,所述濃度計安裝在所述壁部上,以對所述處理空間中的氧氣濃度進行測量。The ultraviolet curing unit according to claim 5, further comprising a concentration meter installed on the wall to measure the oxygen concentration in the processing space. 如請求項7所述的紫外線固化元件,其中所述濃度計被設置成低於所述噴嘴。The ultraviolet curing element as recited in claim 7, wherein the concentration meter is positioned below the nozzle. 如請求項7所述的紫外線固化元件,其中所述控制單元使用所述濃度計中測量的結果來控制所述閥的操作。The ultraviolet curing element according to claim 7, wherein the control unit controls the operation of the valve using the result measured in the concentration meter. 一種基底處理設備,包括: 基底支撐單元,被配置成支撐上面施加有光固化材料的基底;以及 如請求項1至請求項9中的任一項所述的紫外線固化元件,其中所述紫外線固化元件安裝在所述基底支撐單元上方。 A substrate processing device comprising: a substrate support unit configured to support the substrate on which the photocurable material is applied; and The ultraviolet curing element according to any one of claim 1 to claim 9, wherein the ultraviolet curing element is installed above the base support unit. 如請求項10所述的基底處理設備,還包括溫度計,所述溫度計安裝在壁部上,以對所述基底的溫度進行測量。The substrate processing apparatus according to claim 10, further comprising a thermometer installed on the wall to measure the temperature of the substrate. 如請求項11所述的基底處理設備,其中所述基底支撐單元包括: 基底支撐件,被配置成支撐設置在所述基底支撐件上的所述基底;以及 冷卻裝置,被配置成對所述基底支撐件的溫度進行調節, 其中控制單元使用所述溫度計中測量的結果來控制所述冷卻裝置的操作。 The substrate processing equipment as claimed in item 11, wherein the substrate support unit comprises: a substrate support configured to support the substrate disposed on the substrate support; and a cooling device configured to regulate the temperature of the substrate support, Wherein the control unit uses the result measured in the thermometer to control the operation of the cooling device. 如請求項12所述的基底處理設備,其中所述壁部與所述基底支撐件間隔開。The substrate processing apparatus of claim 12, wherein the wall portion is spaced apart from the substrate support. 一種基底處理方法,包括: 製備塗布有光固化材料的基底; 將所述基底安置在基底支撐件上; 在所述基底上方使用所述基底的局部區域形成用於所述基底的處理空間; 在所述處理空間中形成惰性氣體氣氛;以及 在其中形成有所述惰性氣體氣氛的所述處理空間中輻照紫外光。 A substrate treatment method comprising: preparing a substrate coated with a photocurable material; placing the substrate on a substrate support; forming a processing volume for the substrate using a localized area of the substrate above the substrate; forming an inert gas atmosphere in the processing space; and Ultraviolet light is irradiated in the processing space in which the inert gas atmosphere is formed. 如請求項14所述的基底處理方法,其中輻照所述紫外光包括移動其中形成有所述惰性氣體氣氛的所述處理空間。The substrate processing method according to claim 14, wherein irradiating the ultraviolet light includes moving the processing space in which the inert gas atmosphere is formed. 如請求項15所述的基底處理方法,其中形成所述惰性氣體氣氛及輻照所述紫外光中的至少一者包括對所述處理空間中的氧氣濃度進行測量。The substrate processing method according to claim 15, wherein at least one of forming the inert gas atmosphere and irradiating the ultraviolet light includes measuring an oxygen concentration in the processing space. 如請求項16所述的基底處理方法,其中形成所述惰性氣體氣氛包括向所述處理空間供應惰性氣體,且 形成所述惰性氣體氣氛及輻照所述紫外光中的至少一者包括根據所測量的所述氧氣濃度對被供應到所述處理空間的惰性氣體的流動速率進行調節。 The substrate processing method according to claim 16, wherein forming the inert gas atmosphere includes supplying an inert gas to the processing space, and At least one of forming the inert gas atmosphere and irradiating the ultraviolet light includes adjusting a flow rate of an inert gas supplied to the processing space according to the measured oxygen concentration. 如請求項17所述的基底處理方法,其中移動其中形成有所述惰性氣體氣氛的所述處理空間包括相對於其中形成有所述惰性氣體氣氛的所述處理空間的移動方向而以不同方式對被供應到前側的惰性氣體的流動速率與被供應到後側的惰性氣體的流動速率進行調節。The substrate processing method as claimed in claim 17, wherein moving the processing space in which the inert gas atmosphere is formed comprises differently handling the The flow rate of the inert gas supplied to the front side and the flow rate of the inert gas supplied to the rear side are adjusted. 如請求項17所述的基底處理方法,其中形成所述惰性氣體氣氛及輻照所述紫外光中的至少一者包括在所述處理空間與所述基底之間形成惰性氣體幕。The substrate processing method according to claim 17, wherein at least one of forming the inert gas atmosphere and irradiating the ultraviolet light includes forming an inert gas curtain between the processing space and the substrate. 如請求項14至請求項19中的任一項所述的基底處理方法,其中輻照所述紫外光包括對所述基底的溫度進行測量。The substrate processing method according to any one of claim 14 to claim 19, wherein irradiating the ultraviolet light includes measuring the temperature of the substrate. 如請求項20所述的基底處理方法,其中輻照所述紫外光包括根據所述基底所測量的溫度對所述基底支撐件的溫度進行調節。The method of treating a substrate as recited in claim 20, wherein irradiating the ultraviolet light includes adjusting the temperature of the substrate support based on a measured temperature of the substrate.
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