JP2002246318A - Heat treating method and heat treating device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a heat treating method with which the warpage deformation of a body to be treated at elevating of temperature of the body to be treated is prevented, without lowering the throughput. SOLUTION: In this heat treating method, the body W to be treated is mounted on a mounting base 24, installed inside a treatment container 14 capable of being evacuated, the temperature of the body to be treated is elevated to a prescribed temperature, and a prescribed heat treatment is executed. The temperature of the body to be treated is elevated in a state with the body to be treated being provided with temperature distribution in which the temperature of the center part of the body to be treated is high, and the temperature of a peripheral edge part is low. Thus, the warpage deformation of the body to be treated at temperature elevation of the body to be treated is prevented, without lowering the throughput.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat treatment apparatus for performing heat treatment such as film formation or annealing on a semiconductor wafer or the like one by one.

[0002]

2. Description of the Related Art Generally, in order to manufacture a semiconductor integrated circuit, a substrate such as a semiconductor wafer is repeatedly subjected to various heat treatments such as a film forming process, an etching process, an oxidative diffusion process, an annealing reforming process, and the like. An integrated circuit is formed. An example of a single-wafer heat treatment apparatus for performing such heat treatment will be described. FIG. 11 is a schematic configuration diagram showing an example of a conventional heat treatment apparatus, and FIG. 12 is a schematic diagram showing a warped state of a semiconductor wafer on a mounting table. This heat treatment apparatus has a processing container 2 which can be evacuated, and a mounting table 4 on which a semiconductor wafer W is mounted is provided therein, and a processing gas is supplied to a ceiling portion of the processing container 2. A shower head 6 for introduction is provided. And
A plurality of heating lamps 8 as heating means are provided below the bottom of the processing vessel 2, and the mounting table 4 is irradiated with heat rays radiated from the heating lamp 8 through a transmission window 10 made of, for example, quartz provided at the bottom. As a result, the temperature of the wafer W is increased and a desired heat treatment is performed at a predetermined temperature.

[0003]

In the process of processing semiconductor wafers, it is necessary to increase productivity, that is, throughput, so that the wafer temperature is raised to a predetermined process temperature as quickly as possible. I have. In this case, even when the temperature was rapidly increased, no problem occurred so much in the case of a wafer having a relatively small diameter, for example, a 6-inch size. However, as the wafer size increased to 8 inches or 12 inches, FIG. As shown in the figure, there has been a problem that the peripheral portion of the semiconductor wafer W itself warps upward and deforms when the temperature rises. The cause of the warpage is that the amount of thermal expansion on the back surface of the wafer in contact with the mounting table 4 is larger than that on the front surface of the wafer. Such a warping phenomenon of the wafer is particularly large in the case of a 12-inch (30 cm) wafer, and depending on the process temperature, the warping height H of the peripheral portion may reach up to about 3 mm.

As described above, if warpage occurs, there is a problem that a transfer error occurs during transfer of the wafer, or if a thin film is deposited in this state, the film stress increases and the film is liable to peel off. . The present invention has been devised in view of the above problems and effectively solving them. SUMMARY OF THE INVENTION An object of the present invention is to provide a heat treatment method and a heat treatment apparatus capable of preventing the object from being warped and deformed when the temperature of the object is raised without lowering the throughput.

[0005]

According to a first aspect of the present invention, an object to be processed is mounted on a mounting table installed in a processing container capable of being evacuated, and the object to be processed is placed in a predetermined position. In a heat treatment method in which a predetermined heat treatment is performed by raising the temperature to a temperature, the object to be processed is provided with a temperature distribution such that the temperature of the central part of the object is high and the temperature of the peripheral part is low. In this state, the temperature of the object to be processed is raised. As described above, since the temperature is increased in a state where the temperature of the central portion of the processing target is high and the temperature of the peripheral portion is low, the processing target is warped and deformed. Therefore, it is possible to prevent peeling of the thin film and occurrence of an error in transporting the object to be processed.

In this case, for example, the rate of temperature rise of the object to be processed is set lower than the speed of heat transfer from the central part to the peripheral part of the object to be processed. According to a third aspect of the present invention, an object to be processed is mounted on a mounting table installed in a processing container capable of being evacuated, and the object to be processed is heated to a predetermined temperature and subjected to a predetermined heat treatment. In the heat treatment method, when the temperature of the object to be processed is raised to the predetermined temperature, the pressure in the processing container is set to a pressure equal to or lower than a viscous flow at least to a warp safe temperature lower than the predetermined temperature. I am trying to do it. in this way,
By setting the pressure in the processing vessel to a pressure equal to or lower than the viscous flow at the time of temperature rise, heat transfer is mainly radiation, and the speed of heat transfer from the mounting table to the processing object can be reduced. It is possible to prevent the processing object from being warped and deformed, and thus it is possible to prevent peeling of the thin film and occurrence of erroneous conveyance of the processing object.

In this case, for example, the pressure below the viscous flow is 133 Pa (1 Torr).
r) The following is true. The invention defined in claim 5 is an apparatus invention for carrying out the method invention, that is, a processing container which can be evacuated, and which is provided in the processing container and should be processed at a predetermined temperature. A mounting table on which the object to be processed is mounted thereon, a heating unit having a plurality of zone heating units for individually heating the object to be processed of the mounting table in concentrically divided zones, and In a heat treatment apparatus having power supply means for supplying power to each zone heating unit, a temperature measurement means provided corresponding to at least one of the concentric zones, and a temperature rise of the object to be processed. Sometimes the object to be processed is provided with a temperature distribution such that the temperature of the central portion of the object is high and the temperature of the peripheral portion is low based on the detection value of the temperature measuring means. At least the predetermined To a low warpage safe temperature than those having a power control unit that controls the power supply unit so as to warm.

According to a sixth aspect of the present invention, there is provided a processing container capable of being evacuated, and an object to be processed provided at the processing container and processed at a predetermined temperature is placed thereon. A mounting table, a heating unit having a plurality of zone heating units for individually heating the object to be processed of the mounting table in concentrically divided zones, and supplying power to each zone heating unit of the heating unit In a heat treatment apparatus having a power supply unit, a power detection unit configured to measure power supplied to each of the zone heating units of the power supply unit or emitted from each of the zone heating units; When warm,
Based on the detection value of the power detection means, the object to be processed in a state where the temperature of the object to be processed is given a temperature distribution such that the temperature of the central part of the object is high and the temperature of the peripheral part is low. And a power control means for controlling the power supply means so as to raise the temperature to at least a warp safe temperature lower than the predetermined temperature.

According to a seventh aspect of the present invention, there is provided a processing container capable of being evacuated, and a processing object provided in the processing container and to be processed at a predetermined temperature is placed thereon. The mounting table, a heating unit having a zone heating unit for heating the object to be processed of the mounting table in a concentrically divided zone, and a power supply unit for supplying power to the heating unit. A temperature measuring means provided in correspondence with at least one of the concentric zones; and the object to be processed, based on a detection value of the temperature measuring means when the temperature of the object is raised, In a state where a temperature distribution such that the temperature of the central part of the processing body is high and the temperature of the peripheral part is low is provided, the processing target is heated to at least a warp safe temperature lower than the predetermined temperature. The power supply means A heat treatment apparatus, characterized in that a control to the power control unit. In addition, the invention as defined in claim 8 includes a processing container which is made evacuable, and a mounting table which is provided in the processing container and on which an object to be processed at a predetermined temperature is mounted. A heating unit having a zone heating unit for heating the object to be processed on the mounting table in a concentrically divided zone, and a power supply unit for supplying electric power to the heating unit; Power detection means for measuring power emitted from each of the zone heating units of the supply means; and, when the temperature of the object to be processed is raised, the object to be processed based on a detection value of the power detection means, In the state where a temperature distribution such that the temperature of the central portion is high and the temperature of the peripheral portion is low is provided, the electric power is supplied so as to raise the temperature of the target object to at least the warp safe temperature lower than the predetermined temperature. Control supply means A heat treatment apparatus and having a that the power control unit. In this case, for example, as defined in claim 9,
The warpage safe temperature is in a range of 300 ° C. or more. In this case, for example, the power detection unit is any one of a current detector, a voltage detector, and a light amount detector. Further, for example, as defined in claim 11, the power control means is configured to control the electric power so that a temperature rising rate of the object to be processed is lower than a heat transfer rate from a central portion to a peripheral portion of the object to be processed. Control the supply means. Further, for example, as set forth in claim 12, the power control means applies a limiter constant so that the operation amount does not saturate when the temperature of the object is raised. Further, for example, when the operation amount corresponding to one zone is saturated when the temperature of the object to be processed is saturated, the electric power control unit may set the operation amount of another zone corresponding to the saturation amount. Apply a limiter constant.

[0010]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the processing apparatus according to the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a cross-sectional configuration diagram showing a processing apparatus according to the present invention, FIG. 2 is a configuration diagram showing a control system of a heating unit for heating a mounting table, and FIG. 3 is an example of a change in a temperature distribution when a temperature of a workpiece is raised. FIG. Here, a single wafer type film forming apparatus will be described as an example of the processing apparatus. As shown in the figure, the film forming apparatus 12 has a processing container 14 made of aluminum having a substantially cylindrical cross section, for example. A shower head 16 for introducing, for example, various film-forming gases as a process gas whose flow rate is controlled, is provided on a ceiling portion of the processing chamber 14 with a sealing member 17 such as an O-ring.
The film forming gas is injected toward the processing space S from a number of gas injection ports 18 provided on the lower surface.

In the processing container 14, a cylindrical reflector 20 raised from the bottom of the processing container is covered with, for example, three L-shaped holding members 22 (only two are shown in FIG. 1). A mounting table 24 for mounting a semiconductor wafer W as a processing body is provided. The reflector 20 is made of aluminum, and the holding member 22 is made of a heat-permeable material, for example, quartz.
The mounting table 24 is, for example, a carbon material having a thickness of about 1 mm,
It is made of a ceramic such as AlN. Below the mounting table 24, a plurality of, for example, three L-shaped lifter pins 26 (only two are shown in the illustrated example) are provided so as to stand upward, and the base of the lifter pin 26 is a ring. Commonly connected to the member 28. And
The wafer W can be lifted by moving the ring member 28 up and down by a push-up bar 30 provided through the bottom of the processing container, so that the lifter pin 26 is inserted through a lifter pin hole 32 provided through the mounting table 24. It has become.

A bellows 34 which can be extended and contracted in order to keep the inside of the processing vessel 14 airtight is interposed at the penetrating portion of the container bottom of the push-up bar 30, and the lower end of the push-up bar 30 is connected to the actuator 36. Have been.
Further, an exhaust port 38 is provided at a peripheral edge of the bottom of the processing container 14, and an exhaust passage 40 connected to a vacuum pump (not shown) is connected to the exhaust port 38.
4 can be maintained at a predetermined degree of vacuum. A gate valve 42 that is opened and closed when a wafer is loaded and unloaded is provided on a side wall of the processing container 14.

A transmission window 44 made of a heat ray permeable material such as quartz is provided airtightly at the bottom of the processing vessel directly below the mounting table 24 via a seal member 46 such as an O-ring.
Below this, a box-shaped heating chamber 4 surrounding the transmission window 44 is provided.
8 are provided. In the heating chamber 48, a heating means 50 composed of, for example, a plurality of heating lamps is attached to a turntable 52 also serving as a reflecting mirror, and the turntable 52 is provided at the bottom of the heating chamber 48 via a rotation shaft. Rotary motor 54
Is rotated by Therefore, the heat rays emitted from the heating means 50 can pass through the transmission window 44 and irradiate the lower surface of the mounting table 24 to heat it. The heating means 50 is connected to a power supply means 56 for supplying power to the heating means 50.
Is controlled by power control means 58 composed of, for example, a microcomputer.

On the other hand, as shown in FIG.
A temperature measuring means 60, for example, composed of a thermocouple, is provided on the back side of the device for measuring the temperature of this portion. The measured value is supplied to the power control means 58. Specifically, here, the mounting table 24 is concentrically divided into a plurality of, for example, three zones 24A, 24B, and 24C. And each of the above zones 24
Thermocouples 60A, 60B, and 60C are respectively provided as the temperature measuring means 60 corresponding to A to 24C. The plurality of heating lamps forming the heating means 50 corresponding to each of the zones 24A to 24C of the mounting table 24 are three groups, that is, heating lamps (zone heating units).
It is divided into 50A, 50B and 50C. Accordingly, the inner heating lamp 50A mainly irradiates the inner zone 24A, the middle heating lamp 50B irradiates the middle zone 24B, and the outer heating lamp 50C mainly irradiates the outer zone 24C. I have. The power supply means 56 also includes three power supply units 56A, 56B, and 5 connected in correspondence with the three lamp groups 50A to 50C.
6C, and can be individually controlled for each of the lamps 50A to 50C. According to the present invention, when the temperature of the semiconductor wafer W is increased by the power control means 58, the temperature distribution of the wafer W is set such that the temperature at the central portion of the wafer W is high and the temperature at the peripheral portion is low. W can be heated to a predetermined temperature.

Next, the method of the present invention performed using the apparatus configured as described above will be described. First, the gate valve 42 provided on the side wall of the processing container 14 is opened, the wafer W is loaded into the processing container 14 by a transfer arm (not shown), and the lifter pins 26 are pushed up to transfer the wafer W to the lifter pins 26. And the lifter pin 26
Is lowered by lowering the push-up bar 30, and the wafer W is mounted on the mounting table 24.

Next, a predetermined film forming gas or the like is supplied as a processing gas from a processing gas source (not shown) to the shower head unit 16 by a predetermined amount, and the gas is supplied from the gas injection port 18 on the lower surface into the processing container 14 substantially uniformly. To supply. At the same time, the inside of the processing container 14 is set to a predetermined degree of vacuum, for example, about 600 Pa by sucking and exhausting the internal atmosphere from the exhaust port 38, and each heating lamp 50 </ b> A of the heating means 50 located below the mounting table 24. Drive while rotating ~ 50C to radiate heat energy. The radiated heat rays pass through the transmission window 44 and then irradiate the back surface of the mounting table 24 to heat it. Since the mounting table 24 is very thin, about 1 mm as described above, it is quickly heated. Therefore, the wafer W mounted thereon is quickly heated to a predetermined temperature, for example, 550 ° C.
Can be heated to a degree. The supplied film-forming gas causes a predetermined chemical reaction, and a thin film is deposited and formed on the entire surface of the wafer.

Here, when the temperature of the semiconductor wafer W is raised by the conventional method, as shown in FIG. 9A, the entire surface of the wafer is heated at a uniform temperature, so that the heat moves from the back surface of the wafer to the front surface. As a result, the temperature difference between the front and back surfaces of the wafer has increased. On the other hand, in the method of the present invention, when the temperature of the semiconductor wafer W is raised, the temperature is raised in such a temperature distribution that the central portion of the wafer becomes higher and the peripheral portion thereof becomes lower. As described above, a component in which heat moves from the back surface of the wafer to the front surface and a component that moves from the center of the wafer to the side surface are formed. As a result, the temperature difference between the front and back surfaces of the wafer is reduced. More specifically, in the method of the present invention,
With the temperature distribution shown in FIG. 3, the temperature of the wafer W is raised to a predetermined temperature. That is, the detected values of the thermocouples 60A to 60C of the temperature measuring means 60 provided for each of the zones 24A to 24C of the mounting table 24 are determined by the power control means 58.
To the power supply means 5 based on these detected values.
By controlling the power supply units 56A to 56C of No. 6, the power supply amounts of the heating lamps 50A to 50C for each zone are determined. At this time, the amount of power supplied to each of the heating lamps 50A to 50C is naturally feedback-controlled so as to maintain the temperature distribution of the mounting table 24 as shown in FIG.

In FIG. 3, the passage of time flows upward from below in the graph, and shows the transition of the temperature distribution at predetermined intervals. That is, the temperature difference between the central portion and the peripheral portion of the mounting table 24 is approximately Δt ° C., and the central portion has a high temperature distribution, and the entire wafer is maintained while maintaining this temperature distribution state. Temperature goes up. Then, the temperature at the central portion of the wafer is set to
When the temperature substantially reaches ° C, the temperature raising operation of only the peripheral portion is further continued for a certain period of time to set the entire temperature of the wafer W to the set value of 550 ° C. In this case, the temperature difference Δ
Although it depends on the diameter of the wafer W and the set value of the target temperature, t ° C. is, for example, about 10 to 30 ° C. when the wafer W has a size of 300 mm (12 inches). In the above-mentioned temperature raising process, the temperature at the central portion of the wafer becomes a warp safe temperature, for example, 3
After the temperature reaches 00 to 350 ° C., the temperature may be raised by a uniform temperature distribution (a flat temperature distribution instead of a convex shape). The reason is that the thermal expansion coefficient of the constituent material of the wafer is lower in the temperature range above the safe warp temperature than in the temperature range around room temperature, so that the warping deformation stress is higher than the warp safe temperature. This is because the relaxation is achieved in the region of FIG. In this case, the rate of temperature rise of the wafer can be slightly increased. Here, the warp safe temperature refers to a temperature range in which the wafer AW does not undergo warp deformation even when the temperature is raised with a flat temperature distribution.

An important point here is that, as shown in FIG. 3, the temperature rising speed V1 of the semiconductor wafer W is set to be lower than the heat transfer speed V2 when the heat moves from the central portion to the peripheral portion of the wafer. That is the point. That is, if the temperature rising speed V1 is too fast than the heat transfer speed V2, the heat transfer component from the back surface to the front surface of the wafer W increases, so that the difference in thermal expansion between the front surface and the back surface of the wafer W increases. Although warping deformation occurs in the wafer, as in the present embodiment, the wafer W
The temperature is raised while maintaining the temperature difference between the central portion and the peripheral portion of the wafer at about Δt ° C., and the wafer is warped by setting the temperature rising speed V1 to be lower than the heat transfer speed V2. It is possible to raise the temperature without lowering the throughput without lowering the throughput. Here, Δt ° C. is preferably in the range of about 10 ° C. to 30 ° C. from the viewpoint of preventing damage to the susceptor due to thermal stress and preventing warpage of the wafer. In this case, the temperature rise rate V1 of the wafer W is such that the wafer is not warped and deformed.
Moreover, it is preferable to set the speed in a speed range where the throughput is not significantly reduced, for example, about 10 ° C./sec.

The pressure in the processing chamber 14 at the time of raising the temperature of the wafer is set to 600 Pa, which is higher than the process pressure as described above, in order to maintain relatively good thermal conductivity between the wafer W and the mounting table 24. Although the pressure is set to a degree, the pressure at the time of temperature rise is not limited to this. In the above embodiment, the mounting table 24
Although the heating lamps are individually provided for each of the zones, the present invention is not limited to this.If a desired temperature distribution is obtained, it is not necessary to provide a heating lamp for each zone, and a heating lamp smaller than the number of zones may be used. For example, a one-zone heating lamp may be used. In the above embodiment, the thermocouples 60A to 60C are provided for each of the zones 24A to 24C of the mounting table 24. However, the present invention is not limited to this. For example, at least two thermocouples are provided to detect a temperature distribution. I just need. Here, for example, thermocouples 60A and 60C are provided in the inner zone 24A and the outer zone 24C, respectively, and the temperature of the middle zone 24B takes, for example, an intermediate value of the detected values of the two thermocouples 60A and 60C. May be used to control the temperature.

Further, by further pushing the above concept, only one thermocouple is provided, and power is supplied to the other zones at a predetermined ratio so as to generate a temperature distribution as shown in FIG. It may be. FIG. 4 is a block diagram showing an example of a control system of the power control means 58 in which control is performed based on such a method. Here, for example, the thermocouple 60A is provided only in the inner peripheral zone 24A, and the other
It is assumed that thermocouples are not provided for B and 24C.
In FIG. 4, reference numeral 62 denotes a comparison unit which compares the value of the set temperature with the measurement value from the thermocouple 60A and outputs a deviation. 6
Reference numeral 4 denotes a control unit that obtains a control amount based on the deviation from the comparison unit 62. Then, the control amount output from the control unit 64 is multiplied by gain constants K1, K2, and K3 variably corresponding to each zone, and the output is sent to each of the power supply units 56A to 56C. Output. Here, for example, assuming that the gain K1 corresponding to the inner peripheral zone 24A is “1”, other gain constants K2, K3
Are set in advance to numerical values equal to or less than "1" so as to generate the temperature distribution as shown in FIG. still,
When the detected value of the thermocouple 60A reaches the set temperature which is the target value, the other gain constants K2 and K3 also sequentially change toward "1", and finally, the temperature of the entire surface of the wafer becomes the set temperature. Will be maintained.

As shown in FIG. 5, the output of each of the gain constants K1, K2, and K3 is multiplied by a positive constant smaller than "1", for example, a limiter constant LC such as "0.7". Alternatively, the operation amount may be set so as not to be saturated when the temperature of the wafer is raised. This is performed in order to prevent the output of the amplifiers of the power supply units 56A to 56C from being saturated. Thus, the same constant limiter constant LC
Is applied to each operation amount, it is possible to prevent the saturation of the operation amount from occurring. Further, in the case shown in FIG. 5, if this output is saturated to Uisus with respect to the input Ui of the gain constant K1, the saturation rate Ki = Ui
sus / Ui may be obtained, and the saturation rate Ki may be used as a limiter constant LC to be a dynamic limiter constant by multiplying the operation amount for the other thermocouples 60B and 60C.

In the example of the apparatus shown in FIG. 2, the temperatures of these zones are directly measured in correspondence with each of the zones 24A to 24C. However, the present invention is not limited to this. Power detection means for detecting the power supplied to the zone heating units (heating lamps) 50A to 50C and the power supplied to each of the zones 24A to 24C corresponding to each of the zones 24A to 24C is provided. Power may be controlled based on the value. FIG.
Are power supply units 56A to 56C as power detection means.
Current detectors 66A, 66B for detecting the output current from
FIG. 7 shows a diagram provided with voltage detectors 68A, 68B, 68C for detecting output voltages from the respective power supply units 56A to 56C as power detection means. Then, based on the measured output current or output voltage, the power control unit 58 controls the power supplied to each of the heating lamps 50A to 50C. Further, as shown in FIG. 8, the light amount detectors 70A, 70A, 7A correspond to the respective zones 24A to 24C as power detecting means.
0B and 70C may be provided to detect the amount of heat rays from each of the heating lamps 50A to 50C. Then, the power control means 58 controls the power supplied to each of the heating lamps 50A to 50C based on the detection values of the light amount detectors 70A to 70C.

Accordingly, also in the case of the apparatus shown in FIGS. 6 to 8, the temperature difference between the central portion and the peripheral portion of the wafer W is Δt ° C.
By raising the temperature while maintaining the temperature, it is possible to raise the temperature without causing warpage of the wafer and without lowering the throughput.
6 to 8, at least one thermocouple is provided in order to directly measure the temperature of the mounting table 24. 6 to 8, the inner peripheral zone 24 is used.
A case where a thermocouple 60A corresponding to A is provided.

Also, in the method of the present invention described above, an example has been described in which the electric power supplied to each of the zones 24A to 24C is controlled in order to realize the temperature distribution as shown in FIG. In addition to or without performing this operation method, the pressure in the processing chamber 14 may be reduced to a pressure equal to or lower than the viscous flow when the temperature of the wafer is raised. In practice, the pressure below this viscous flow is
It refers to a pressure of 133 Pa (1 Torr) or less, which is a pressure in the region of molecular flow. Thereby, the mounting table 24 and the wafer W
The heat transfer between the two is mainly conducted and radiated, and there is almost no heat transfer by convection, so that the heat transfer between the two is slightly suppressed. As a result, the temperature rise rate of the wafer itself is suppressed and slowed down, and the component of heat transfer from the center of the wafer to the side surface increases, so that the temperature difference between the front surface and the back surface of the wafer is reduced accordingly. As a result, it is possible to prevent the wafer itself from being deformed by warpage. Although a heating lamp composed of a point light source is used as the heating means here, the invention is not limited to this. For example, a linear light source lamp formed by winding a filament or the like in a linear shape may be used. In this case, as shown in FIG. 10, for example, a plurality of, for example, four linear heating lamps 92 each having a filament 90 wound in a linear shape may be provided and arranged in a radial manner. Here, the number of windings of the filament 90 is not uniform, and for example, the high-density portion 92A,
B, density is provided like low density portion 92C. By arranging the linear heating lamps 92 such that the high-density portion 92A is located on the center side of the turntable 52, FIG.
A zone-like temperature distribution as shown in FIG. 6 can be obtained.

In the present embodiment, the case where the mounting table 24 is divided into three zones has been described as an example. However, the number of divisions is not limited to this number, and any number of divisions may be used as long as it is two or more. Also, here, the case where the zones are divided into concentric circles has been described. However, the present invention is not limited to this, and the mounting table may be divided into a plurality of circular zones. Further, the heating means is not limited to the heating lamp, and a resistance heater embedded in the mounting table may be used. Furthermore,
The present invention can be applied not only to a film forming apparatus but also to an etching process, an oxidation diffusion process, an annealing reforming process, and the like. Further, in this embodiment, a semiconductor wafer has been described as an example of an object to be processed, but the present invention is not limited to this, and it is needless to say that the present invention can be applied to an LCD substrate, a glass substrate, and the like.

[0027]

As described above, according to the heat treatment method and heat treatment apparatus of the present invention, the following excellent effects can be obtained. According to the first, second, and fourth to thirteenth aspects, the temperature is increased in a state where a temperature distribution is provided such that the temperature of the central part of the object to be processed is high and the temperature of the peripheral part is low. Therefore, it is possible to prevent the object to be warped from being deformed, thereby preventing the thin film from being peeled off and the transport error of the object to be processed from occurring.
According to the invention according to claim 3, by setting the pressure in the processing container to a pressure equal to or lower than the viscous flow at the time of raising the temperature, heat transfer is mainly performed by radiation and heat transfer from the mounting table to the object to be processed. Since the speed can be reduced, the object to be processed can be prevented from being warped and deformed, and therefore, it is possible to prevent the thin film from being peeled off and the transport error of the object to be processed from occurring.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a processing apparatus according to the present invention.

FIG. 2 is a configuration diagram illustrating a control system of a heating unit that heats a mounting table.

FIG. 3 is a schematic diagram illustrating an example of a change in a temperature distribution when a temperature of a target object is raised.

FIG. 4 is a block diagram illustrating an example of a control system of a power control unit according to a modified example of the device of the present invention.

FIG. 5 is a block diagram illustrating an example of a control system of a power control unit according to another modification of the device of the present invention.

FIG. 6 is a diagram showing a state in which a current detector for detecting an output current from each power supply unit is provided as power detection means.

FIG. 7 is a diagram showing a state in which a voltage detector for detecting an output voltage from each power supply unit is provided as power detection means.

FIG. 8 is a diagram showing a state in which a light amount detector is provided as power detection means corresponding to each zone to detect the amount of heat rays from each heating lamp.

FIG. 9 is a diagram showing a state of heat transfer when the temperature of the object to be processed is increased by the conventional method and the method of the present invention.

FIG. 10 is a plan view showing a heating lamp according to a modification of the heating means in the present invention.

FIG. 11 is a schematic configuration diagram illustrating an example of a conventional heat treatment apparatus.

FIG. 12 is a schematic diagram showing a warped state of a semiconductor wafer on a mounting table.

[Explanation of symbols]

 Reference Signs List 12 film forming apparatus (heat treatment apparatus) 14 processing container 16 shower head section 24 mounting table 44 transmission window 50 heating means 50A to 50C heating lamp (zone heating section) 56 power supply means 56A to 56C power supply section 58 power control means 60 temperature Measuring means 60A to 60C Thermocouple 62 Comparison unit 64 Control unit 66A to 66C Current detector 68A to 68C Voltage detector 70A to 70C Photodetector W Semiconductor wafer (workpiece)

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 5F004 AA16 BB26 CA02 CA03 CA04 5F045 AE02 AE03 AE05 AE07 AE09 AE11 AE13 AE15 AE17 AE19 BB11 DP03 EK11 EK22 EK30 GB05

Claims (13)

[Claims] An object to be processed is mounted on a mounting table installed in a processing container capable of being evacuated, and the object is heated to a predetermined temperature and subjected to a predetermined heat treatment. In the heat treatment method, the temperature of the object to be processed is increased in a state where the temperature of the object to be processed is increased such that the temperature of the central part of the object is high and the temperature of the peripheral part is low. A heat treatment method comprising: 2. The heat treatment method according to claim 1, wherein the rate of temperature rise of the object to be processed is lower than the rate of heat transfer from the central part to the peripheral part of the object to be processed. 3. An object to be processed is mounted on a mounting table installed in a processing container capable of being evacuated, and the object to be processed is heated to a predetermined temperature and subjected to a predetermined heat treatment. In the heat treatment method, when the temperature of the object to be processed is raised to the predetermined temperature, the pressure in the processing container is set to a pressure equal to or lower than a viscous flow at least to a warp safe temperature lower than the predetermined temperature. A heat treatment method comprising: 4. The pressure below the viscous flow is 133 Pa
4. The heat treatment method according to claim 3, wherein the temperature is not more than (1 Torr). 5. A processing container capable of being evacuated, a mounting table provided in the processing container, on which a processing target to be processed at a predetermined temperature is mounted, and a processing table of the mounting table. In a heat treatment apparatus having a heating unit having a plurality of zone heating units for individually heating the processing body for each of the zones divided concentrically, and a power supply unit for supplying electric power to each zone heating unit of the heating unit. A temperature measuring means provided corresponding to at least one of the concentric zones; and a temperature measuring means provided on the processing target based on a detection value of the temperature measuring means when the temperature of the processing target is raised. In a state where a temperature distribution such that the temperature of the central part of the processing body is high and the temperature of the peripheral part is low is provided, the processing target is heated to at least a warp safe temperature lower than the predetermined temperature. The power supply means Heat treatment apparatus; and a power control unit that Gosuru. 6. A processing container capable of being evacuated, a mounting table provided in the processing container for mounting an object to be processed at a predetermined temperature on the processing container, In a heat treatment apparatus having a heating unit having a plurality of zone heating units for individually heating the processing body for each of the zones divided concentrically, and a power supply unit for supplying electric power to each zone heating unit of the heating unit. Power detection means for measuring power supplied to each of the zone heating units of the power supply means or emitted from each of the zone heating units; and detecting the power detection means when the temperature of the object to be processed is increased. Based on the value, the object to be processed in a state where a temperature distribution such that the temperature of the central part of the object is high and the temperature of the peripheral part is low, at least the predetermined temperature Lower warpage safety Heat treatment apparatus; and a power control means for controlling said power supply means so as to warm to time. 7. A processing container capable of being evacuated, a mounting table provided in the processing container, on which a processing object to be processed at a predetermined temperature is mounted, and a processing table mounted on the mounting table. A heating unit having a zone heating unit that heats the processing body in a zone shape concentrically divided, and a heat treatment apparatus having a power supply unit that supplies power to the heating unit, wherein the concentric zone A temperature measuring unit provided corresponding to at least one zone, wherein the temperature of the central portion of the processing target is higher on the processing target based on a detection value of the temperature measuring unit when the temperature of the processing target is raised. Power control for controlling the power supply means so as to raise the temperature of the object to be processed to at least a warp safe temperature lower than the predetermined temperature in a state where a temperature distribution such that the temperature of the peripheral portion is lowered is provided. Have means Heat treatment apparatus, characterized in that. 8. A processing container capable of being evacuated, a mounting table provided in the processing container, on which a processing object to be processed at a predetermined temperature is mounted, and a processing table of the mounting table. In a heat treatment apparatus, comprising: a heating unit having a zone heating unit for heating a processing body in a zone shape concentrically divided; and a power supply unit for supplying power to the heating unit, wherein each of the zones of the power supply unit is Power detection means for measuring the power emitted from the heating unit; and, when the temperature of the object to be processed is increased, the temperature of the central part of the object to be processed is determined based on a value detected by the power detection means. A power for controlling the power supply means so as to raise the temperature of the object to be processed to at least a warp safe temperature lower than the predetermined temperature in a state where the temperature distribution is high and the temperature of the peripheral portion is low. Control means and Thermal processing apparatus characterized by having. 9. The heat treatment apparatus according to claim 5, wherein the warp safe temperature is in a range of 300 ° C. or higher. 10. The heat treatment apparatus according to claim 9, wherein the power detection unit is any one of a current detector, a voltage detector, and a light amount detector. 11. The power control unit controls the power supply unit so that a temperature rising rate of the object to be processed is lower than a heat transfer speed from a central part to a peripheral part of the object to be processed. The heat treatment apparatus according to any one of claims 5 to 10, wherein: 12. The heat treatment apparatus according to claim 11, wherein the power control means applies a limiter constant so that the operation amount does not saturate when the temperature of the object is raised. 13. The power control unit according to claim 1, wherein when the operation amount corresponding to one zone is saturated when the temperature of the object is raised,
12. The heat treatment apparatus according to claim 11, wherein a limiter constant is applied to an operation amount of another zone corresponding thereto.