JPH09246261A - Heat treatment equipment and its temperature control method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a heat treatment equipment capable of accurately measuring the temperature of a body to be treated and accurately controlling this temperature. SOLUTION: This equipment has a stacking base 10 for stacking a plurality of bodies W to be treated at predetermined intervals housed in a cylindrical treatment container 8, the bodies W to be treated are heated by heating means 28 arranged on the outer periphery of the treatment container. In this case, non-contact type temperature measuring means 54 are provided so as to face the surface of the bodies W to be treated on the upper side or the lower side of the treatment container 8, contact type temperature measuring means 34 is provided for measuring the temperature in the heating means 28, and temperature control means 44 for controlling the quantity of heat of the heating means 28 is provided based on the measured values of the non-contact type and contact type temperature measuring means 54. By doing this, the temperature of the bodies W to be treated can be measured accurately, so that highly accurate temperature control can be performed based on the measured values.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat treatment apparatus for performing heat treatment on an object to be processed such as a semiconductor wafer and a temperature control method thereof.

[0002]

2. Description of the Related Art In general, as the density and integration of semiconductor devices have increased, thinning of each layer of the device has been promoted, while the size of semiconductor wafers has also increased from 6 inches to 8 inches. With this progress, more precise control of each parameter such as processing temperature and processing gas is required in each wafer processing step. For example, in the case of film formation processing, temperature control during film formation must be performed accurately in order to make the film quality and film thickness of the oxide film of the capacitor insulating film and the gate oxide film uniform and to improve the characteristics. I have to.

A conventional batch type vertical heat treatment apparatus which is generally used because of its excellent mass productivity will be described with reference to FIG. This vertical processing device 2
Has a processing container 8 including, for example, a cylindrical inner cylinder 4 made of high-purity quartz and an outer cylinder 6 concentrically arranged on the outer circumference of the cylindrical inner cylinder 4 with a predetermined gap. A wafer boat 10 as a mounting table made of, for example, quartz for holding the semiconductor wafers W at a predetermined pitch is accommodated therein.
The wafer boat 10 is placed on a heat insulating cylinder 14 made of quartz provided on the heat insulating cylinder base 12.
Are rotatably supported by a boat elevator 18 via a rotating shaft 16. In addition, the rotating shaft 16 is provided in the inner cylinder 4
The cap portion 22 that hermetically closes the opening of the manifold portion 20 at the lower end of the is penetrated through a holder 24. The holder 24 allows the rotation shaft 16 to rotate while maintaining airtightness, for example. It has a magnetic fluid seal inside. The boat elevator 18 is supported by an elevating mechanism 26 so that the cap portion 22 and the entire wafer boat 10 can be raised and lowered, and the boat 10 can be inserted into and removed from the processing container 8 as needed.

On the other hand, a heating heater 28 for heating the wafer W is provided outside the processing container 8 so as to cover the entire processing container 8. The heating heater 28 is made of stainless steel through a heat insulating material 30. It is covered by a transparent outer shell 32. Since the heaters 28 have different thermal conditions in the height direction of the boat 10, they are divided into a plurality of zones in the vertical direction in order to accurately control the wafer temperature, and in the illustrated example, they are divided into five zones. A main thermocouple 34 is provided in the vicinity of the heater 28 so that the temperature can be controlled individually. In such a configuration, the processing gas is introduced from the gas introduction nozzle 35 provided in the manifold portion 20 into the inner cylinder 4, and the processing gas comes into contact with the wafer W to form a film thereon, for example. The applied and treated gas descends through the gap between the inner cylinder 4 and the outer cylinder 6 and is discharged from the system through the exhaust port 36.

[0005]

By the way, when heat-treating a wafer as described above, in order to form a film having a uniform film quality and good characteristics, the uniformity of the temperature within each wafer surface should be considered. In addition to the high temperature, it is also required that the temperature between wafers installed at different positions in the vertical direction, that is, the temperature between the wafer surfaces be high and uniform. Wafer boat 1
The thermal conditions above and below 0 differ depending on the location, for example, the amount of heat radiation is high in the upper and lower portions of the wafer boat, but the amount of heat radiation is low in the central portion, and the wafer W and the main thermocouple 34 are different from each other. There is also a constant distance between them, so that each thermocouple 34 naturally does not reflect the exact temperature of the wafer.

Therefore, in order to compensate for this drawback, the following operation is generally performed. That is, before actually performing the heat treatment on the wafer W, the inspection thermocouple tube 40 in which the sub-thermocouple 38 is arranged at the position corresponding to each zone is inserted in the inner cylinder 4, and in this state For example, the dummy wafer is heated to a similar temperature to perform the film forming process,
At that time, the detection value of the sub-thermocouple 38 and the detection value of the main thermocouple 34 for each zone are measured, and the correlation between them is obtained. The actual wafer processing is performed by the thermocouple tube 40 for inspection.
Is removed, and at this time, the electric power supplied to the heater is controlled so that the measured value of the main thermocouple 34 maintains a predetermined value while referring to the above-mentioned correlation.

However, the above-described operation of obtaining the correlation using the sub-thermocouple 38 is carried out every time the cleaning process for removing the film adhered to the processing container, the thermocouple tube for inspection, etc. is performed. In some cases, the film deposited on the processing container or the thermocouple tube may not be sufficiently cleaned or may be excessively cleaned to scrape off quartz, which is a constituent material of the container and the thermocouple tube 40. In addition, micro cracks or the like may occur in the thermocouple tube 40, and as a result, the light transmittance of the container or the thermocouple tube 40 fluctuates slightly, and the correlation of the thermocouple is deviated. In some cases, it could not be controlled accurately with high accuracy.

Further, when the correlation is obtained, the inspection thermocouple tube 40 is provided near the wafer to measure the wafer temperature, but even in this case, the thermocouple is not in direct contact with the wafer W. The detected value of the sub-thermocouple 38 does not reflect the actual wafer temperature, and it is inevitable that a slight deviation occurs between the two. The present invention has been devised in view of the above problems and effectively solving them. An object of the present invention is to provide a heat treatment apparatus and a temperature control method therefor capable of accurately measuring the temperature of an object to be processed and controlling the temperature well.

[0009]

In order to solve the above problems, the invention of claim 1 heats an object to be processed placed in a processing container by a heating means to perform a predetermined heat treatment. In the heat treatment apparatus, a non-contact type temperature measuring means is provided to measure the temperature of the object to be treated. According to a second aspect of the present invention, a mounting table on which a plurality of objects to be processed are placed at a predetermined pitch is housed in a cylindrical processing container, and the objects to be processed are heated by heating means arranged on the outer periphery of the processing container. In a heat treatment apparatus for performing a predetermined heat treatment by heating, a non-contact type temperature measuring means is provided above or below the treatment container so as to face the surface of the object to be treated,
The heating means is provided with a contact type temperature measuring means for measuring this temperature, and a temperature control means for controlling the heat generation amount of the heating means based on the measurement values of the non-contact type and contact type temperature measuring means. It is configured to include.

According to the first aspect of the present invention, the temperature of the object to be processed is detected by the non-contact type temperature measuring means. Therefore, the temperature of the object to be processed can be accurately detected. By controlling the amount of heat generated by the heating means based on the above, the temperature of the object to be processed can be controlled accurately.

According to the second aspect of the present invention, in this case, a batch type vertical processing container is used as the processing container, and the surface temperature of the object to be processed is accurately measured by the non-contact temperature measuring means. The temperature of the heating means is detected by the contact-type temperature measuring means. Then, the temperature control means controls the amount of heat generated by the heating means based on the measured values of both temperature measurement means, and accurately controls the temperature of the object to be processed. As the non-contact type temperature measuring means, for example, a radiation thermometer that detects radiation from the object to be processed and obtains its temperature is used, and as the contact type temperature measuring means, for example, a thermocouple is used. You can

In addition, during heat treatment of the object to be processed, a dummy object to be processed may be generally placed on the upper and lower portions of the mounting table. In this case, the dummy object to be processed is exposed to light. A through hole is formed to form an optical path from the object to be processed to the non-contact type temperature measuring means so that the temperature from the object to be processed can be measured. Further, this non-contact type temperature measuring means is provided with a focus adjusting optical system so that the focus can be adjusted to an arbitrary object to be processed held at different positions in the height direction of the mounting table. Keep it. Then, for example, the temperature of the heating means at that time is measured by the non-contact type temperature measuring means at the same time by measuring the temperature at different positions in the height direction of the mounting table using the dummy object to be processed. The correlation between the two is taken. Then, when the object to be processed is actually processed, the heating value of the heating means is controlled while referring to the above correlation. This makes it possible to control the temperature of the object to be processed with high accuracy.

[0013]

BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of a heat treatment apparatus and a temperature control method therefor according to the present invention will be described in detail below with reference to the accompanying drawings. FIG. 1 is a block diagram showing an example of a heat treatment apparatus according to the present invention, FIG. 2 is an enlarged sectional view showing an attached state of a non-contact type temperature measuring means which is a main part of the present invention, and FIG. 3 is a heat treatment apparatus of the present invention. 3 is a block diagram showing the temperature control system of FIG. FIG.
The same parts as those of the device shown in FIG. still,
In this embodiment, a CVD (Chemica) is used as a heat treatment apparatus.
An example of a film formation processing apparatus for forming a film by means of 1 Vapor Deposition will be described.

As shown in the figure, the film forming apparatus 2 which is a vertical heat treatment apparatus is concentrically arranged with a predetermined interval between the inner cylinder 4 and the outer circumference of the cylindrical inner cylinder 4 made of high-purity quartz, for example. It has a processing container 8 composed of an outer cylinder 6 which is also made of high-purity quartz and is arranged at the lower end of the base 4.
2, and the manifold portion 20 made of, for example, stainless steel is provided at the lower end opening of the processing container 8.
Is connected. In this processing container 8, a large number of semiconductor wafers W to be processed at a predetermined pitch, for example, 120
A wafer boat 10 as a mounting table for holding about one wafer is accommodated. This wafer boat 10 is also made of, for example, heat-resistant high-purity quartz. A resistance heater 28 as a heating means for heating the wafer W is provided on the outside of the processing container 8 so as to cover the entire processing container 8. The resistance heater 28 is made of, for example, stainless steel via a heat insulating material 30. It is covered by an outer shell 32 made of steel.

Since the resistance heater 28 has different thermal conditions in the height direction of the board 10, the resistance heater 28 is divided into a plurality of zones in the vertical direction, ie, five zones in the illustrated example, and each zone independently has a temperature. You have control over it. A contact type temperature measuring means, for example, a main thermocouple 34 is provided in the vicinity of the resistance heater 28 in each zone, and the measured value is inputted to the temperature control means 44 composed of, for example, a microcomputer. , The temperature can be controlled individually.

On the other hand, the wafer boat 10 is mounted on the quartz heat insulating cylinder 14 provided on the heat insulating cylinder base 12,
The heat insulation cylinder base 12 is supported by a boat elevator 18 via a rotary shaft 16. Further, the lower end opening of the manifold portion 20 is hermetically closed by a cap portion 22 that can be opened and closed via a seal member 46 such as an O-ring. As shown in FIG. 2, the rotary shaft 16 is
The cap portion 22 is penetrated and inserted into a holder 24 fixed to the boat elevator 18, and is rotatably supported while maintaining airtightness via a rotary bearing 48 and a magnetic fluid seal 50. In addition, the cap portion 22 has a stopper 52.
Are fixed to the holder 24 by means of, and the both are integrally connected. Although not shown, this rotary shaft 1
6 is rotated at the time of wafer processing by a drive belt indirectly wound around this.

The boat elevator 18 is supported by an elevating mechanism 26 (see FIG. 1) composed of, for example, a linear ball screw, and integrally elevates and lowers the cap portion 22 and the wafer boat 10 as necessary. Accordingly, the boat 10 can be inserted into and removed from the processing container 8. Then, in the boat elevator 18 of the device example configured as described above, the non-contact type temperature measuring means, which is a feature of the present invention,
For example, a radiation thermometer 54 is provided. This radiation thermometer 5
Reference numeral 4 denotes a measuring instrument that detects radiation emitted from the object to be measured, here the object to be processed, and measures its temperature in a non-contact manner. Therefore, the heat retaining cylinder 14, the heat retaining cylinder base 12 and the rotating shaft 16 are provided for this purpose. An optical path 56 is formed by penetrating vertically through the optical path 56, so that the emitted light from the wafer W can pass through the optical path 56.

The radiation thermometer 54 has a mounting member 58 and a bolt 60 at a position located on an extension of the optical path 56.
A focus adjusting optical system 62 capable of freely adjusting the focus position is provided on the optical path 56 side thereof, and the wafer is located at an arbitrary height position on the boat 10. It is possible to focus on W. The lower end of the rotating shaft 16 facing the radiation thermometer 54 has an enlarged diameter and is opened in a stepped shape, and a light transmission member made of, for example, quartz is transmitted through a sealing member 64 made of an O-ring or the like to this portion. The window 66 is attached and fixed by a ring-shaped pressing ring 68 and a bolt 70.
The mounting structure of the light transmitting window 66 is not limited to this.
Any structure may be used as long as the projection light from the wafer can be directly input to the radiation thermometer 54 while maintaining the airtightness inside the container.

The measured value obtained by the radiation thermometer 54 is transmitted to the temperature control means 44 as shown in FIG. 3, and based on the measured value and the measured values from the main thermocouples 34, etc. The temperature control means 44 controls the heater driving section 72 to control the temperature of the wafer. FIG.
In the inside, the storage unit 76 is a memory that stores a table and the like described later. And, in the manifold part 20,
Gas introduction nozzle 3 for introducing processing gas into the processing container 8
5 is provided, and an exhaust port 36 connected to a vacuum exhaust system (not shown) is provided on the lower side wall of the outer cylinder 6 of the processing container 8.

Next, the temperature control method of the present invention, which is carried out by using the apparatus configured as described above, will be described.
First, the flow of the film forming process will be described. A large number of unprocessed wafers are held in the wafer boat 10 with the wafer boat 10 being unloaded from the processing container 8. At this time,
In general, a dummy processing object for monitoring, that is, a dummy wafer is provided on the upper and lower parts of the wafer boat 10 for the purpose of evaluating the characteristics of product wafers or the like or for making the thermal conditions between product wafers more uniform. Holds an appropriate number of sheets. When the transfer of the product wafers and the dummy wafers to the boat is completed, the boat elevator 18 is raised by the elevating mechanism 26 to load the wafer boat 10 into the preheated processing container 8, and the lower end opening of the manifold unit 20 is opened. The portion is sealed with the cap portion 22 to make the inside of the processing container 8 airtight.

Then, while the processing container 8 is evacuated to a predetermined process pressure, for example, 0.1 to 1.0 Torr, the electric power supplied to each resistance heater 28 is increased to adjust the temperature inside the processing container 8 to the process temperature. , For example 550 ° C to 900 ° C
The temperature is raised to a certain degree, and at the same time, the gas introduction nozzle 35
Process gas, for example, silane and oxygen is supplied into the process container 8 from above, and heat treatment, for example, film forming process is performed. Here, during the film forming process, the temperature of the heater 28 is measured for each zone from each main thermocouple 34 corresponding to the heater zone, and the measured value is input to the temperature control means 44. In addition, the radiant light traveling downward from the product wafer held at the bottom of the boat
4, the rotary shaft 16 and the like are passed through and an incident light beam is incident on the radiation thermometer 54 through an optical path 56, and the wafer temperature is measured.
The measured value is also input to the temperature control means 44. Then, the temperature control unit 44 drives the heater driving unit 72 with reference to these measured values and a table (described later) stored in the storage unit 72, and controls the heat generation amount of each heater.

FIG. 4 shows a wafer W at the time of processing a product wafer.
2 schematically shows the positional relationship between the radiation thermometer 54 and the main thermocouple 34, and here shows a case where two dummy wafers DW are respectively positioned above and below the product wafer W. In this case, a light passage hole 74 is formed in the center of each lower dummy wafer DW so as to reach the radiation thermometer 54 without blocking the emitted light of the lowermost product wafer W1. Not the temperature but the temperature of the lowermost product wafer W1 can be accurately detected. The number of dummy wafers DW can be appropriately changed depending on the processing conditions and the like, but in that case, the position of the product wafer W1 at the lowermost end moves in the boat height direction, and therefore the focus position is moved by the focus adjustment optical system 62. Good. As the dummy wafer DW, in addition to silicon,
It can be formed of SiC or SiO ₂ .

The heat treatment of the product wafer is performed as described above. However, in the present invention, prior to the above-described processing of the product wafer, a dummy wafer is used for the main thermocouple 34 and the radiation thermometer 44. The correlation of the measured values is made into a table, and the temperature is controlled by referring to this table when the product wafer W is actually processed. First, as shown in FIG. 5, all the dummy wafers DW are used and the main thermocouple 34 and the radiation thermometer 5 for each zone in the boat height direction are used.
The measured values of 4 are tabulated. At this time, the radiation thermometer 54
The temperature of the main thermocouple when the measured value of, for example, reaches the process temperature is tabulated as shown in FIG. 6 (A).
It is preferable that the processing conditions at the time of creating the table be the same as the thermal conditions at the time of processing the actual product wafer. Therefore, the boat is fully loaded with the dummy wafers DW, and the temperature is lower than the zone to be measured. All the dummy wafers DW located at are provided with light passage holes 74 so that the radiation light from the measurement target dummy wafer DW can reach the radiation thermometer 54. At this time, it goes without saying that the focus adjustment optical system 62 is adjusted to focus on the dummy wafer DW to be measured.

FIGS. 5 (A) to 5 (E) show the measurement states of the dummy wafer temperature in zone 1 to zone 5, respectively.
As shown in FIG. 6A, the measurement temperature of the radiation thermometer is set to 800 ° C. here. The reason why the measurement temperature of each main thermocouple is higher than the measurement temperature of the radiation thermometer is that heat loss occurs before the heater heat reaches the wafer, and the upper and lower zones, for example, zone 1, The reason why the temperature of the main thermocouple of No. 5 is higher than that of the zone temperature on the central side is that the upper and lower ends of the boat have a large amount of heat radiation compared to the central side, and the amount of heat generated is large to compensate for that. Because. For such a table, it is preferable to provide a large number of tables in advance by changing the temperature measured by the radiation thermometer. The measured temperature value shown here indicates a general temperature tendency, and it is of course different from the actual measured value.

Next, when the creation of the table is completed as described above, the actual product wafer film forming process as described above is started, and such a film forming process is repeatedly performed until the next cleaning process, for example. Be seen. FIG. 6B is a table showing an example of the temperature profile at that time. Here, the target temperature of each main thermocouple 34 when the process temperature is set to 800 ° C. is shown. That is, even if the table as shown in FIG. 6A can be taken immediately after cleaning the processing container 8, for example, an unnecessary film that causes a reduction in thermal efficiency is formed on the inner wall of the processing container due to the subsequent repeated processing. Since it adheres, it is necessary to set the temperature as shown in FIG. 6 (B). In the radiation thermometer 54, since there is no obstacle that blocks the radiated light in the middle of the optical path 56, the temperature of the lowermost product wafer W can always be detected accurately regardless of the number of times of processing. Since no film is deposited on the light transmitting window 66, the temperature of the product wafer can be accurately measured and no problem occurs. Also note that the radiation thermometer can only measure the bottommost product wafer temperature during product wafer processing. In order to maintain the temperature of the product wafer at the lowest end at 800 ° C, focusing on the main thermocouple in zone 1, the heat loss is larger than when creating the table, so set it to 850 ° C, which is 20 ° C higher. It will have to be done.

Therefore, the main thermocouples in the other zones 2 to 5 are each +2 more than the temperature at the time of making the table.
The heater temperature is controlled so as to increase by 0 ° C. As a result, the temperature of all product wafers is set to the process temperature of 8
It becomes possible to set and maintain the temperature at 00 ° C. substantially uniformly. Figure 7
Is a graph showing the relationship between the measured values of the main thermocouple and the radiation thermometer in zone 1, FIG. 7 (A) shows the change in both measured values when the table is made, and FIG. The changes in both measured values during the film forming process are shown. Here, in order to facilitate understanding, the set temperature of the main thermocouples in the other zones 2 to 5 is uniformly increased by + 20 ° C. However, the setting temperature is not limited to this, and actually the thermal temperature of each zone is increased. It goes without saying that the range of increase will be changed for each zone, taking into consideration conditions and experience. In addition, here, in FIG.
At the time of creating the table shown in (A), the temperature of the dummy wafer DW was measured for each zone to create a table with higher accuracy.
The temperature may be measured, and for other zones, the temperature correlation between zones may be determined using the conventional thermocouple tube for inspection shown in FIG.

Furthermore, in order to protect the radiation thermometer 54 from heat, a cooling means such as a cooling jacket may be provided here. Further, here, the radiation thermometer 54 is provided below the processing container 8, but instead of this, the optical path tube made of a quartz tube is extended upward from the upper end of the outer cylinder 6 of the processing container 8. A radiation thermometer 54 may be provided. Further, the present invention is not limited to the above vertical type film forming processing apparatus, and can be applied not only to other heat treatment apparatuses such as an oxidation diffusion apparatus, but also to a single wafer type heat treatment apparatus. Of course.

[0028]

As described above, according to the heat treatment apparatus and the thermometer control method of the present invention, the following excellent operational effects can be exhibited. According to the invention defined in claim 1, the temperature of the object to be processed is measured by using the non-contact temperature measuring means, and this temperature can be measured with high accuracy. According to the invention defined in claim 2, since the temperature of the object to be processed is measured by using the non-contact type temperature measuring means, the temperature of the object to be processed can always be obtained with high accuracy. Therefore, by controlling the temperature of a plurality of objects to be processed based on this measured value, the temperature can be made substantially uniform between the plurality of objects to be processed, and the uniformity of not only the in-plane temperature but also the surface-to-surface temperature is significantly increased. Can be improved.
Since the temperature of the object to be processed can always be detected with high accuracy regardless of the number of processes, it is possible to improve the uniformity of the heat treatment on the object to be processed over a number of processes. Also, by using the focus adjustment optical system,
This accurate temperature can be measured by focusing on the object to be processed at an arbitrary position in the height direction. According to the invention defined in claim 7, the correlation between the measurement values of the contact-type temperature measuring means and the non-contact temperature measuring means is set in advance, and the correlation is actually calculated based on this correlation and the measurement values of the respective measuring means. Since the object to be processed is heat-treated, the objects arranged in the vertical direction can be maintained at substantially the same temperature, and the in-plane and inter-surface temperature uniformity of the object can be greatly improved. Can be improved.

[Brief description of drawings]

FIG. 1 is a configuration diagram showing an example of a heat treatment apparatus according to the present invention.

FIG. 2 is an enlarged cross-sectional view showing a mounting state of a non-contact type temperature measuring means which is a main part of the present invention.

FIG. 3 is a block diagram showing a temperature control system of the heat treatment apparatus of the present invention.

FIG. 4 is a schematic diagram showing a positional relationship among an object to be processed, a radiation thermometer, and a thermocouple during processing of the object to be processed.

FIG. 5 is an explanatory diagram for explaining a method for examining a correlation between a thermocouple and a measurement value of a radiation thermometer.

FIG. 6 is a table showing a correlation between a thermocouple and a radiation thermometer and a set temperature of an object to be processed during actual processing.

FIG. 7 is a graph showing changes in temperature during the creation of the correlation and the actual processing of the object to be processed.

FIG. 8 is a diagram showing a conventional vertical heat treatment apparatus.

[Explanation of symbols]

 2 film forming processing apparatus (heat treatment apparatus) 4 inner cylinder 6 outer cylinder 8 processing container 10 wafer boat (mounting table) 14 heat retaining cylinder 16 rotating shaft 18 boat elevator 28 resistance heater (heating means) 34 main thermocouple (contact type) Temperature measuring means) 44 Temperature control means 50 Magnetic fluid seal 54 Radiation thermometer (non-contact type temperature measuring means) 56 Optical path 62 Focusing optical system 66 Light transmitting window 74 Light passing hole DW Dummy wafer (dummy processed object) W Semiconductor wafer (processing target)

Claims (7)

[Claims] 1. A heat treatment apparatus in which an object to be processed placed in a processing container is heated by a heating means to perform a predetermined heat treatment, and a non-contact type temperature for measuring the temperature of the object to be processed. A heat treatment apparatus comprising a measuring means. 2. A mounting table for mounting a plurality of objects to be processed at a predetermined pitch is housed in a cylindrical processing container, and the objects to be processed are heated by heating means arranged on the outer periphery of the processing container. In a heat treatment apparatus for performing a predetermined heat treatment, a non-contact type temperature measuring means is provided above or below the processing container so as to face the surface of the object to be processed, and the heating means is provided with a contact for measuring the temperature. And a temperature control means for controlling the amount of heat generated by the heating means based on the measurement values of the non-contact type and contact type temperature measuring means. apparatus. 3. When the dummy processing object for monitoring is placed on the mounting table in addition to the processing object, the dummy processing object and the non-contact type temperature are set on the dummy processing object. The heat treatment apparatus according to claim 2, wherein a light passage hole for forming an optical path with the measuring means is formed. 4. The heat treatment apparatus according to claim 1, wherein the non-contact type temperature measuring means is a radiation thermometer, and the contact type temperature measuring means is a thermocouple. 5. The heat treatment apparatus according to claim 4, wherein the radiation thermometer is provided with a focus adjusting optical system for adjusting the focus position on the surface of the object to be processed. 6. A temperature control method of a heat treatment apparatus for heating a target object placed in a processing container by a heating means to perform a predetermined heat treatment, wherein the temperature of the target object is measured by a non-contact type temperature measuring means. A temperature control method for a heat treatment apparatus, which is configured to measure and control the amount of heat generated by the heating means based on the measured value. 7. The temperature control method for a heat treatment apparatus as set forth in claim 2, wherein the dummy object is placed on the placing table and the temperature at different positions in the height direction is set to the non-contact temperature. A step of measuring the temperature of the contact-type temperature measuring means at that time by a measuring means and obtaining a correlation between both measured values, and thereafter placing the object to be processed on the mounting table, While controlling the temperature of the processing object by the non-contact type temperature measuring means, the calorific value of the heating means is controlled based on the measurement result, the measurement result of the contact type temperature measuring means, and the correlation. And a temperature control method for a heat treatment apparatus.