TW201705370A - Apparatus for handling substrate can manufacture MEMS components through opening of laser beam chamber - Google Patents

Apparatus for handling substrate can manufacture MEMS components through opening of laser beam chamber Download PDF

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TW201705370A
TW201705370A TW105103716A TW105103716A TW201705370A TW 201705370 A TW201705370 A TW 201705370A TW 105103716 A TW105103716 A TW 105103716A TW 105103716 A TW105103716 A TW 105103716A TW 201705370 A TW201705370 A TW 201705370A
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substrate
laser
chamber
heating
vacuum
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TW105103716A
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TWI703677B (en
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Frank Reichenbach
Jens Frey
Mawuli Ametowobla
Philip Kappe
Juergen Butz
Jochen Reinmuth
Julia Amthor
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Bosch Gmbh Robert
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02035—Shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • B23K26/1224—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in vacuum
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K37/00—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
    • B23K37/04—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups for holding or positioning work
    • B23K37/047—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups for holding or positioning work moving work to adjust its position between soldering, welding or cutting steps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00206—Processes for functionalising a surface, e.g. provide the surface with specific mechanical, chemical or biological properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
    • B81C1/00492—Processes for surface micromachining not provided for in groups B81C1/0046 - B81C1/00484
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/782—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, each consisting of a single circuit element
    • H01L21/786—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, each consisting of a single circuit element the substrate being other than a semiconductor body, e.g. insulating body
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0111—Bulk micromachining
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2900/00—Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems

Abstract

An apparatus (100) for handling substrate has: at least a vacuum chamber (10) capable of being regulated at a specified air pressure; a heating component for heating the substrate; and a laser component (20) configured at the exterior of the vacuum chamber (10), wherein the laser component (20) can move relative to the substrate; wherein at least a chamber of the substrate configured in the vacuum chamber (10) can, through the laser component (20), be locked by melting substrate material.

Description

用於加工基板的裝置 Device for processing a substrate

本發明係有關於一種用於加工基板的裝置。 The present invention relates to an apparatus for processing a substrate.

在先前技術中揭露了若干雷射加工設備，在該等雷射加工設備中，加工時用所需的氣體在開放式的系統中沖洗待加工的基板。用氣體沖洗可有助於冷卻基板或運走工藝產品。 Several laser processing equipment have been disclosed in the prior art in which the substrate to be processed is processed in an open system with the required gas during processing. Flushing with a gas can help cool the substrate or remove the process product.

DE 42 38 826 C1公開了用於照射帶兩室系統之基板的裝置，其中在超高真空下鍛化矽基板。其中，雷射源佈置於該裝置的外部，待加工的矽基板位於第一真空室中，用於相對於該矽基板而改變雷射輻射的位置之運動的鏡子位於第二真空室中。進而透過兩扇窗戶使得來自外部的雷射輻射照在佈置於第一真空室中的矽基板上。 DE 42 38 826 C1 discloses a device for illuminating a substrate with a two-chamber system in which a ruthenium substrate is forged under ultra-high vacuum. Wherein, the laser source is disposed outside the device, and the ruthenium substrate to be processed is located in the first vacuum chamber, and the mirror for changing the position of the laser radiation relative to the ruthenium substrate is located in the second vacuum chamber. Further, the laser radiation from the outside is irradiated onto the ruthenium substrate disposed in the first vacuum chamber through the two windows.

為製造薄膜晶體管(TFT)而使用雷射熔化已被揭露。在TFT中，多晶矽形成活性層，透過加熱並結晶作為起始材料的非晶矽層形成此活性層。由於將玻璃用作低熔點的基板材料，因而較佳地使用基板之具有較低熱負荷的方法，如：雷射熔化。 The use of laser melting for the fabrication of thin film transistors (TFTs) has been disclosed. In the TFT, polycrystalline germanium forms an active layer, and the active layer is formed by heating and crystallizing an amorphous germanium layer as a starting material. Since glass is used as the substrate material of low melting point, a method of lowering the thermal load of the substrate, such as laser melting, is preferably used.

在US 6 797 651 B2中對用於雷射熔化矽而製造具有平滑表面之多晶矽層的方法及裝置進行了說明。為此在真空室中，在範圍為1.3 x 103Pa至1.3Pa的壓力下進行該雷射熔化。如此便能產生具有較低表面粗糙 度的多晶矽層。在此裝置中，透過壁室窗戶使得聚焦的雷射光束對準壁室內的物體。該壁室包括惰性氣體輸入口、用於產生真空的泵與壓力控制器，以控制所述的壓力範圍。所使用的惰性氣體自組別氮氣(N 2)、氬氣及氖氣中選擇。 A method and apparatus for producing a polycrystalline germanium layer having a smooth surface for laser melting crucibles is described in US Pat. No. 6,797,651 B2. For this purpose, the laser melting is carried out in a vacuum chamber at a pressure ranging from 1.3 x 10 3 Pa to 1.3 Pa. This produces a polycrystalline germanium layer with a lower surface roughness. In this device, the focused laser beam is directed through the wall chamber window to the object within the wall chamber. The wall chamber includes an inert gas input port, a pump for generating a vacuum, and a pressure controller to control the pressure range. The inert gas used is selected from the group consisting of nitrogen (N 2 ), argon and helium.

因此本發明之目的在於，提供一種用於加工基板的改良裝置。 It is therefore an object of the present invention to provide an improved apparatus for processing a substrate.

根據第一態樣，本發明用以達成上述目的之解決方案為一種用於加工基板的裝置，其具有：至少一真空室，在其中一規定的氣壓可被調節；用於加熱該基板的加熱構件；及佈置於該真空室外部的雷射構件，其中該雷射構件可相對於該基板運動，其中藉由該雷射構件，該佈置於該真空室內之基板的至少一腔室可透過熔化基板材料而閉鎖。 According to a first aspect, the solution of the present invention for achieving the above object is a device for processing a substrate, comprising: at least one vacuum chamber in which a prescribed gas pressure can be adjusted; heating for heating the substrate a member; and a laser member disposed outside the vacuum chamber, wherein the laser member is movable relative to the substrate, wherein at least one chamber of the substrate disposed in the vacuum chamber is permeable to melting by the laser member The substrate material is latched.

以此種方式實現可加熱真空製程室與雷射加工構件的組合，藉由其可在確切規定的環境壓力下閉鎖基板中的接入開口。從而可製造具有確切規定的腔室內壓之MEMS元件。 In this way, a combination of a heatable vacuum process chamber and a laser processing member is achieved by which the access opening in the substrate can be locked at a precisely defined ambient pressure. It is thus possible to manufacture MEMS components with precisely defined intracavity pressures.

該裝置之有利的改良方案為附屬項之內容。 An advantageous modification of the device is the content of the subsidiary item.

該裝置之一種有利的改良方案特徵在於，該加熱構件佈置於該真空室中。如此便能實現真空室與加熱構件之節省空間的組合。 An advantageous development of the device is characterized in that the heating element is arranged in the vacuum chamber. This makes it possible to achieve a space-saving combination of the vacuum chamber and the heating element.

該裝置之另一有利的改良方案特徵在於，該加熱構件佈置於分開的加熱室中。如此便能提供更多的加熱性能，其中按情況可加熱更多 數量的基板。 A further advantageous development of the device is characterized in that the heating element is arranged in a separate heating chamber. This will provide more heating performance, which can be heated more by case The number of substrates.

該裝置之另一有利的改良方案特徵在於，藉由該加熱構件，一或多個基板可被同時加熱。如此便能實現對基板有效且省時的加工。 A further advantageous development of the device is characterized in that one or more substrates can be heated simultaneously by means of the heating member. This enables efficient and time-saving processing of the substrate.

該裝置之另一有利的改良方案特徵在於，其另具用於保持該基板的保持構件。如此便能實現基板相對於雷射構件之較高的調整或定位精確度。 A further advantageous refinement of the device is characterized in that it additionally has a holding member for holding the substrate. This enables a higher adjustment or positioning accuracy of the substrate relative to the laser member.

該裝置之另一有利的改良方案特徵在於，該保持構件構建為機械保持構件、真空保持構件或靜電保持構件。以此種方式，為該保持構件提供不同的技術可能性，針對該基板的不同固定方案可透過該等技術可能性實現。 A further advantageous development of the device is characterized in that the holding element is embodied as a mechanical holding element, a vacuum holding element or an electrostatic holding element. In this way, different technical possibilities are provided for the holding component, and different fixing solutions for the substrate can be realized by these technical possibilities.

該裝置之另一有利的改良方案在於，該雷射構件設計為近紅外範圍內的雷射器。從而提供雷射熔化基板材料的有效可能性，以達成閉鎖腔室的接入開口之目的。 A further advantageous development of the device consists in that the laser member is designed as a laser in the near-infrared range. This provides an effective possibility for the laser to melt the substrate material for the purpose of locking the access opening of the chamber.

該裝置之另一有利的改良方案在於，該雷射構件設計為脈衝雷射器或連續雷射器。藉此，閉鎖MEMS元件腔室的方法可有利地以不同類型之雷射器實現。 A further advantageous development of the device consists in that the laser component is embodied as a pulsed laser or as a continuous laser. Thereby, the method of latching the MEMS element chamber can advantageously be implemented with different types of lasers.

該裝置之另一有利的改良方案特徵在於，該雷射構件的波長範圍較佳地處於約1000nm與約1100nm之間，尤佳地處於約1060nm與約1080nm之間。 A further advantageous refinement of the device is characterized in that the laser member preferably has a wavelength in the range between about 1000 nm and about 1100 nm, more preferably between about 1060 nm and about 1080 nm.

該裝置之另一有利的改良方案特徵在於，其還具有用於冷卻該基板的冷卻構件。如此便能實現為雷射加工而最佳化之規定的基板溫度。進而可在不同的規定溫度下閉鎖腔室。 A further advantageous refinement of the device is characterized in that it also has a cooling means for cooling the substrate. In this way, the specified substrate temperature optimized for laser processing can be achieved. In turn, the chamber can be locked at different specified temperatures.

該裝置之另一有利的改良方案特徵在於，其還具有傳輸構件，用於在該等各種構件之間傳輸該基板。從而支持基板在各個構件與裝置壁室之間自動、局部的位移，進而支持有效地用該基板製造MEMS元件。 A further advantageous refinement of the device is characterized in that it also has a transport member for transporting the substrate between the various components. Thereby supporting the automatic and partial displacement of the substrate between the respective components and the device wall chamber, thereby supporting the efficient fabrication of the MEMS component from the substrate.

該裝置之另一有利的改良方案特徵在於，該基板材料為矽。 A further advantageous development of the device is characterized in that the substrate material is tantalum.

下面根據多個附圖對其他特徵與優點進行詳細說明。在說明書及附圖中所描述以及在申請專利範圍中回溯引用的所有特徵皆構成本發明的內容。相同或功能相同的元件用同一元件符號表示。 Further features and advantages will be described in detail below with reference to the various drawings. All of the features described in the specification and drawings and which are recited in the claims are intended to constitute the invention. The same or functionally identical elements are denoted by the same element symbols.

10‧‧‧真空室 10‧‧‧vacuum room

11‧‧‧真空連接 11‧‧‧vacuum connection

12‧‧‧玻璃連接 12‧‧‧ glass connection

13‧‧‧窗戶 13‧‧‧ windows

14‧‧‧真空閘 14‧‧‧vacuum brake

20‧‧‧雷射構件 20‧‧‧ Laser components

21‧‧‧第二定位構件 21‧‧‧Second positioning member

30‧‧‧保持構件 30‧‧‧Retaining components

31‧‧‧定位構件 31‧‧‧ Positioning members

50‧‧‧加熱室、壁室 50‧‧‧heating room, wall room

60‧‧‧傳輸構件 60‧‧‧Transmission components

61‧‧‧基板處理器 61‧‧‧Base Processor

70‧‧‧冷卻室、壁室 70‧‧‧Cooling room, wall room

100‧‧‧裝置 100‧‧‧ device

200‧‧‧步驟 200‧‧‧ steps

210‧‧‧步驟 210‧‧‧Steps

220‧‧‧步驟 220‧‧‧Steps

230‧‧‧步驟 230‧‧‧Steps

240‧‧‧步驟 240‧‧‧ steps

250‧‧‧步驟 250‧‧‧ steps

圖1為用於加工基板的裝置之橫截面圖；圖2為另一用於加工基板的裝置之橫截面圖；圖3為另一用於加工基板的裝置之橫截面圖；圖4為另一用於加工基板的裝置之俯視圖；以及圖5為加工基板之方法的基本流程。 1 is a cross-sectional view of another apparatus for processing a substrate; FIG. 2 is a cross-sectional view of another apparatus for processing a substrate; FIG. 3 is a cross-sectional view of another apparatus for processing a substrate; A top view of a device for processing a substrate; and FIG. 5 is a basic flow of a method of processing a substrate.

微機械元件(MEMS元件)可包括第一微機械感應器元件(如：轉速感應器)與第二微機械感應器元件(如：加速感應器)。藉由接合材料可形成形式為較佳地由矽構成之拱形晶體的拱形元件，其與MEMS元件共同實現了接合連接。透過該第一感應器元件可構建一腔室，在該腔室內封閉有規定的內壓。為實現高品質的轉速感應器，要求極低的內壓。 The micromechanical component (MEMS component) can include a first micromechanical sensor component (eg, a rotational speed sensor) and a second micromechanical sensor component (eg, an acceleration inductor). By means of the bonding material, an arched element in the form of an arched crystal, preferably formed of tantalum, can be formed which, in conjunction with the MEMS element, achieves a joint connection. A chamber can be constructed through the first inductor element, within which a defined internal pressure is enclosed. In order to achieve a high quality speed sensor, an extremely low internal pressure is required.

透過該第二感應器元件還可佈置一腔室，在該腔室中封閉有規定的壓力。該等兩個所述的感應器元件可在空間上彼此隔離地佈置於共 同的拱形元件下，並以此種方式實現低成本、節省空間的帶轉速感應器與加速感應器之微機械元件。 A chamber can also be arranged through the second inductor element, in which a defined pressure is enclosed. The two described inductor elements can be spatially isolated from each other Under the same arched element, in this way, a low-cost, space-saving micromechanical component with a speed sensor and an acceleration sensor is realized.

本發明提出一種裝置，用其可將基板製造為所述的微機械元件之一種。 The present invention provides a device with which a substrate can be fabricated as one of the micromechanical components.

圖1為用於加工基板以製造MEMS元件的裝置100的第一實施方案的橫截面圖。該裝置100包括具有調節至雷射構件20的波長之光學窗戶13的真空室10，透過其可使得該佈置在外部的雷射構件20聚焦照射進該真空室10中，並熔化基板材料(如：矽、玻璃)，進而可閉鎖基板之腔室的接入開口。矽的熔化有利地在小於約100Pa的壓力中進行。該雷射構件20可構建為近紅外範圍內的脈衝雷射器或連續雷射器(CW雷射器)。 1 is a cross-sectional view of a first embodiment of an apparatus 100 for processing a substrate to fabricate a MEMS component. The apparatus 100 includes a vacuum chamber 10 having an optical window 13 tuned to the wavelength of the laser member 20, through which the externally disposed laser member 20 can be focused into the vacuum chamber 10 and melt the substrate material (eg, : 矽, glass), which in turn can block the access opening of the chamber of the substrate. The melting of the crucible is advantageously carried out at a pressure of less than about 100 Pa. The laser member 20 can be constructed as a pulsed laser or a continuous laser (CW laser) in the near infrared range.

此外，在該真空室10中佈置有保持構件30，藉由其可保持或固定基板(未顯示)。此外，藉由該保持構件30可補償基板的彎曲(英語：waferbow)。該保持構件30例如可實現靜電、機械或真空的保持。第一定位構件31係用於該機版，以相對該裝置100的座標系調整該基板的位置與方向。 Further, a holding member 30 is disposed in the vacuum chamber 10 by which a substrate (not shown) can be held or fixed. Further, the bending of the substrate can be compensated by the holding member 30 (English: waferbow). The retaining member 30 can, for example, achieve electrostatic, mechanical or vacuum retention. The first positioning member 31 is used for the machine plate to adjust the position and orientation of the substrate relative to the coordinate system of the device 100.

為達成此目的，該基板可透過x/y台在固定的雷射光學元件下移動，並可以+/-10pm及10pm以下的定位精度相對於該雷射構件20進行定位。該雷射構件20的雷射光束可替代地藉由掃描光學元件(未顯示)透過該基板受到導引。亦可替代地藉由可移動的鏡子(未顯示)在固定的基板之範圍內移動該雷射構件20的雷射光束(“飛行光學”)。可替代地透過具有圖像處理的攝影機(未顯示)相對於基板調節該雷射構件20的雷射光束。 To achieve this, the substrate can be moved through the x/y stage under fixed laser optics and positioned relative to the laser member 20 with a positioning accuracy of +/- 10 pm and below. The laser beam of the laser member 20 can alternatively be guided through the substrate by a scanning optical element (not shown). Alternatively, a laser beam ("flying optics") of the laser member 20 can be moved within a fixed substrate by a movable mirror (not shown). The laser beam of the laser member 20 is alternatively adjusted relative to the substrate by a camera (not shown) having image processing.

為在移動速度較高時同時提高定位精確度，可將x/y台或轉動台與掃描光學元件進行組合。 To improve positioning accuracy while moving at a higher speed, the x/y stage or turntable can be combined with the scanning optics.

在該真空室10中可安裝有真空連接11與玻璃連接12，用以調節該真空室10內規定的壓力。此外，該真空室10還可包括真空閘14，該真空閘允許對該真空室10以真空兼容的方式進行裝載及卸載。 A vacuum connection 11 and a glass connection 12 may be mounted in the vacuum chamber 10 for regulating the pressure specified in the vacuum chamber 10. In addition, the vacuum chamber 10 can also include a vacuum gate 14 that allows loading and unloading of the vacuum chamber 10 in a vacuum compatible manner.

為加熱基板，該保持構件30可藉由加熱構件(未顯示)被加熱，較佳地在加熱範圍約100℃至500℃之間，且較佳地對其進行控制。藉由可加熱的保持構件30可在雷射閉鎖過程之前將基材加熱或乾燥或蒸發。如此便能以規定的方式對基板進行預處理，從而在閉鎖雷射後較好地保持規定的內壓。為達成此目的，亦可有利地對真空室10進行通風並泵吸(英語：pump-and purge process)，如此便能以此種方式為改良的基材清潔過程提供支持。 To heat the substrate, the retaining member 30 can be heated by a heating member (not shown), preferably between about 100 ° C and 500 ° C, and is preferably controlled. The substrate can be heated or dried or evaporated prior to the laser latching process by the heatable retaining member 30. In this way, the substrate can be pretreated in a defined manner to better maintain the specified internal pressure after the laser is blocked. To achieve this, it is also advantageous to ventilate and pump the vacuum chamber 10 in such a manner as to support the improved substrate cleaning process in this manner.

為閉鎖腔室的接入開口，將該微機械元件的矽局部有限制地熔化。為熔化矽，較佳地安裝近紅外範圍內的連續雷射器(CW雷射器)。有利地，為在規定的氣壓下閉鎖接入開口而使用波長約>500nm的IR雷射器(紅外雷射器)。此種雷射器的紅外輻射極深地穿透入矽基板中，從而實現對接入開口極深且可靠的閉鎖。 In order to block the access opening of the chamber, the turns of the micromechanical element are locally melted in a limited manner. In order to melt the crucible, a continuous laser (CW laser) in the near-infrared range is preferably installed. Advantageously, an IR laser (infrared laser) having a wavelength of >500 nm is used to block the access opening at a specified air pressure. The infrared radiation of such a laser penetrates extremely deeply into the substrate, thereby achieving an extremely deep and reliable latch-up of the access opening.

此外有利地，安裝作為雷射構件20的脈衝雷射器，其脈衝長小於約100μs，脈衝與暫停時間內的平均性能小於60kW，以便有利地儘可能低地保持MEMS結構的熱應力。 Further advantageously, a pulsed laser as the laser member 20 is mounted with a pulse length of less than about 100 [mu]s and an average performance of less than 60 kW during the pulse and pause time to advantageously maintain the thermal stress of the MEMS structure as low as possible.

該裝置100可選地可具有另一雷射室(未顯示)，在該雷射室中藉由雷射鑽孔產生通向MEMS腔室的入口(未顯示)。 The apparatus 100 can optionally have another laser chamber (not shown) in which an entrance (not shown) to the MEMS chamber is created by laser drilling.

圖2為用於加工基板的裝置100之另一方案。在此情況下，該雷射構件20包括用於該雷射構件20的第二定位構件21，藉由該第二定位構件可相對於該基板在該真空室10中定位該雷射構件20。在此情況下，毋需用於保持構件30的定位構件31。 2 is another aspect of an apparatus 100 for processing a substrate. In this case, the laser member 20 includes a second positioning member 21 for the laser member 20 by which the laser member 20 can be positioned in the vacuum chamber 10 with respect to the substrate. In this case, the positioning member 31 for holding the member 30 is not required.

此外有利地，可將一個以上的MEMS結構敷設在至少兩個氣密隔離的腔室中，並用該雷射構件20的雷射脈衝閉鎖至少一腔室。在該等腔室中，可對不同的壓力進行調節。可在第一腔室中透過接合法來界定內含壓力，或者，可在第二腔室中透過雷射閉鎖過程進行界定。可替代地透過雷射閉鎖分別實現該等腔室中之不同的內壓。有利地，在該二分開的腔室中分別佈置有至少一加速感應器或轉速感應器或磁場感應器或壓力感應器。 Further advantageously, more than one MEMS structure can be placed in at least two hermetically isolated chambers and at least one chamber can be blocked by the laser pulses of the laser member 20. In these chambers, different pressures can be adjusted. The contained pressure may be defined by a bonding method in the first chamber or may be defined by a laser blocking process in the second chamber. Alternatively, different internal pressures in the chambers can be achieved by laser blocking. Advantageously, at least one acceleration sensor or a rotational speed sensor or a magnetic field sensor or a pressure sensor is arranged in each of the two separate chambers.

可選地，可針對該裝置100安裝位於上游之分開的加熱室50，並在規定的氣壓或真空條件下運輸MEMS元件。透過精確的壓力控制以及將不同氣體連接至該真空室10上，可在具有不同互相隔離的腔室的MEMS芯片上，對不同的腔室內壓與氣體氣壓進行調節。透過在閉鎖前用該分開的加熱室50對MEMS元件進行額外加熱，可更好地避免閉鎖後透過排氣提高壓力。 Alternatively, separate heating chambers 50 located upstream may be installed for the apparatus 100 and transport the MEMS components under specified atmospheric or vacuum conditions. Through precise pressure control and the connection of different gases to the vacuum chamber 10, different chamber pressures and gas pressures can be adjusted on MEMS chips having different isolated chambers. By additionally heating the MEMS element with the separate heating chamber 50 prior to latching, it is better to avoid pressure increase through the exhaust after latching.

該分開的加熱室50之另一優點在於，提高該機器的總通過量。透過壁室10、50與70之間的真空閘14，可分別調節並控制該等壁室10、50與70的不同處理要求(如：溫度參數、時間參數、壓力參數)。 Another advantage of the separate heating chamber 50 is that it increases the overall throughput of the machine. Through the vacuum gate 14 between the wall chambers 10, 50 and 70, different processing requirements (e.g., temperature parameters, time parameters, pressure parameters) of the wall chambers 10, 50, and 70 can be separately adjusted and controlled.

圖3為此種改良裝置100的橫截面圖。該位於上游之分開的加熱室50可接收一或多個基板，其中在真空下、在規定的氣壓下或透過泵 吸與通風循環(英語：pumpe and purge)可進行加熱。該位於上游之加熱室50可同樣具有真空連接11與玻璃連接12，用於調節該加熱室50內規定的氣壓。 3 is a cross-sectional view of such an improved device 100. The upstream heated chamber 50 can receive one or more substrates, under vacuum, at a specified gas pressure, or through a pump The suction and purge cycles allow for heating. The upstream heating chamber 50 can likewise have a vacuum connection 11 and a glass connection 12 for regulating the specified air pressure within the heating chamber 50.

該加熱室50主要用於對基板表面進行有針對性的排氣，以在溫度的作用下並藉由製程氣體將吸附物自基板的表面上分開。此點係在微機械元件的整個使用壽命內實現穩定內壓的必要之舉。在此情況下，必須在真空(或惰性氣體)條件下確保該基板自加熱室50至真空室10的傳輸。為達成此目的，安裝了額外的傳輸構件60。 The heating chamber 50 is mainly used for performing targeted exhaust on the surface of the substrate to separate the adsorbate from the surface of the substrate by the process gas under the action of temperature. This is necessary to achieve a stable internal pressure throughout the life of the micromechanical component. In this case, the transfer of the substrate from the heating chamber 50 to the vacuum chamber 10 must be ensured under vacuum (or inert gas) conditions. To achieve this, an additional transmission member 60 is installed.

該裝置100可選地可具有冷卻室70，以在加熱至加工溫度(英語：handling temperature)後冷卻該基板。如此便能藉由該冷卻室70將基板的溫度調節至規定的溫度，以隨後在該真空室10中透過雷射熔化進行閉鎖。 The apparatus 100 can optionally have a cooling chamber 70 to cool the substrate after heating to a processing temperature. Thus, the temperature of the substrate can be adjusted to a prescribed temperature by the cooling chamber 70 to be subsequently blocked by laser melting in the vacuum chamber 10.

該設備在多個壁室存在的情況下可具有可自動操作的傳輸構件60，其可配設用於在該裝置100的不同壁室之間傳輸基板的基板處理器61(英語：Substrate handler)。 The apparatus may have an automatically operable transfer member 60 in the presence of a plurality of wall chambers that may be provided with a substrate handler 61 for transferring substrates between different wall chambers of the device 100 (English: Substrate handler) .

如4為此種改良裝置100的俯視圖。可辨識居中佈置的傳輸構件60，該基板可藉由該傳輸構件移動至該等壁室10、50與70並在各個壁室之間移動。在該傳輸構件60與該等壁室10、50與70之間可分別安裝有一真空閘14。 4 is a top view of such an improved device 100. A centrally disposed transfer member 60 can be identified that can be moved by the transfer member to the wall chambers 10, 50 and 70 and moved between the various wall chambers. A vacuum brake 14 is respectively disposed between the transmission member 60 and the wall chambers 10, 50 and 70.

圖4顯示操作該裝置100的方法之基本流程。 FIG. 4 shows the basic flow of a method of operating the apparatus 100.

在第一步驟200中，將基板裝載入該真空室10。 In a first step 200, a substrate is loaded into the vacuum chamber 10.

在步驟210中，對該真空室10內之真空進行調節。 In step 210, the vacuum in the vacuum chamber 10 is adjusted.

在步驟220中，相對於該雷射構件20校準該基板。 In step 220, the substrate is calibrated relative to the laser member 20.

在步驟230中，相對於該雷射構件20對MEMS元件之腔室的接入開口進行定位。 In step 230, the access opening of the chamber of the MEMS element is positioned relative to the laser member 20.

在步驟240中，用該雷射構件20加工基板，以達成閉鎖基板腔室的接入開口之目的。 In step 240, the substrate is machined with the laser member 20 for the purpose of latching the access opening of the substrate chamber.

在步驟250中，自該裝置100的真空室10卸載該基板。 In step 250, the substrate is unloaded from the vacuum chamber 10 of the apparatus 100.

按情況可多次反覆進行步驟230與240，直至基板上所有的腔室被閉鎖，此點透過反向箭頭顯示。 Steps 230 and 240 may be repeated as many times as necessary until all of the chambers on the substrate are latched, as indicated by the reverse arrows.

不言而喻，可採用該方法的多個改良方案，其中根據要求適當地調節各個加工步驟及其在各個壁室中的順序。 It goes without saying that a number of modifications of the method can be employed, in which the individual processing steps and their order in the individual wall chambers are suitably adjusted as required.

總之，本發明提供了一種裝置，用其可有利地，透過藉由雷射光束閉鎖腔室的接入開口來製造MEMS元件。如此便能透過組合可加熱的真空製程室與雷射器來有效製造所述元件。 In summary, the present invention provides a device with which it is advantageous to fabricate a MEMS component through an access opening that locks the chamber by a laser beam. This makes it possible to efficiently manufacture the components by combining a heatable vacuum process chamber with a laser.

本發明之裝置並非僅限於前述之具體實施例。因此，相關領域通常知識者認識到，該裝置可以多個此前未公開或僅部分公開的改良方案而實現。有鑒於此，相關領域通常知識者可適當地改變前述特徵或將其加以組合，而不偏離本發明的核心。 The device of the present invention is not limited to the specific embodiments described above. Accordingly, those skilled in the relevant art will recognize that the device can be implemented in a number of modifications that have not been previously disclosed or only partially disclosed. In view of this, those skilled in the relevant art can appropriately change the foregoing features or combine them without departing from the core of the present invention.

10‧‧‧真空室 10‧‧‧vacuum room

11‧‧‧真空連接 11‧‧‧vacuum connection

12‧‧‧玻璃連接 12‧‧‧ glass connection

13‧‧‧窗戶 13‧‧‧ windows

14‧‧‧真空閘 14‧‧‧vacuum brake

20‧‧‧雷射構件 20‧‧‧ Laser components

30‧‧‧保持構件 30‧‧‧Retaining components

31‧‧‧定位構件 31‧‧‧ Positioning members

100‧‧‧裝置 100‧‧‧ device

Claims (10)

一種用於加工基板的裝置(100)，其具有：至少一真空室(10)，在其中一規定的氣壓可被調節；用於加熱該基板的加熱構件；及佈置於該真空室(10)外部的雷射構件(20)，其中該雷射構件(20)可相對於該基板運動，其中藉由該雷射構件(20)，該佈置於該真空室(10)內之基板的至少一腔室可透過熔化基板材料而閉鎖。 A device (100) for processing a substrate, comprising: at least one vacuum chamber (10), wherein a prescribed gas pressure can be adjusted; a heating member for heating the substrate; and being disposed in the vacuum chamber (10) An outer laser member (20), wherein the laser member (20) is movable relative to the substrate, wherein at least one of the substrates disposed in the vacuum chamber (10) is supported by the laser member (20) The chamber can be blocked by melting the substrate material. 如申請專利範圍第1項之裝置(100)，其特徵在於，該加熱構件佈置於該真空室(10)中。 The device (100) of claim 1, wherein the heating member is disposed in the vacuum chamber (10). 如申請專利範圍第1項之裝置(100)，其特徵在於，該加熱構件佈置於分開的加熱室(50)中。 The device (100) of claim 1, wherein the heating member is disposed in a separate heating chamber (50). 如申請專利範圍第1至3項中任一項之裝置(100)，其特徵在於，藉由該加熱構件，一或多個基板可被同時加熱。 The device (100) according to any one of claims 1 to 3, characterized in that one or more substrates can be simultaneously heated by the heating member. 如前述申請專利範圍中任一項之裝置(100)，另具有用於保持該基板的保持構件(30)。 A device (100) according to any one of the preceding claims, further comprising a holding member (30) for holding the substrate. 如申請專利範圍第5項之裝置(100)，其特徵在於，該保持構件(30)構建為機械保持構件、真空保持構件或靜電保持構件。 A device (100) according to claim 5, characterized in that the holding member (30) is constructed as a mechanical holding member, a vacuum holding member or an electrostatic holding member. 如前述申請專利範圍中任一項之裝置(100)，其特徵在於，該雷射構件(20)設計為近紅外範圍內的雷射器。 A device (100) according to any of the preceding claims, characterized in that the laser member (20) is designed as a laser in the near infrared range. 如前述申請專利範圍中任一項之裝置(100)，其還具有用於冷卻該基板的冷卻構件(70)。 A device (100) according to any of the preceding claims, further comprising a cooling member (70) for cooling the substrate. 如申請專利範圍第3至8項中任一項之裝置(100)，其還具有傳輸構件 (60)，用於在規定的氣壓下在該等各種構件(10，50，70)之間傳輸該基板。 The device (100) according to any one of claims 3 to 8, which further has a transmission member (60) for transporting the substrate between the various members (10, 50, 70) under a prescribed air pressure. 一種如前述申請專利範圍中任一項之裝置(100)的應用，用於用該基板製造微機械元件。 An application of a device (100) according to any of the preceding claims, for fabricating a micromechanical component from the substrate.
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