WO2011142192A1 - Metal film forming system, metal film forming method, and computer storage medium - Google Patents

Metal film forming system, metal film forming method, and computer storage medium Download PDF

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Publication number
WO2011142192A1
WO2011142192A1 PCT/JP2011/058523 JP2011058523W WO2011142192A1 WO 2011142192 A1 WO2011142192 A1 WO 2011142192A1 JP 2011058523 W JP2011058523 W JP 2011058523W WO 2011142192 A1 WO2011142192 A1 WO 2011142192A1
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WIPO (PCT)
Prior art keywords
substrate
load lock
station
unit
metal film
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PCT/JP2011/058523
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French (fr)
Japanese (ja)
Inventor
修 平河
勝 友野
清次 中島
尚文 木下
恭弘 久我
Original Assignee
東京エレクトロン株式会社
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Publication of WO2011142192A1 publication Critical patent/WO2011142192A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/04—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/08—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of metallic material
    • C23C18/10—Deposition of aluminium only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

Definitions

  • the present invention relates to a metal film forming system for forming a metal film on a substrate, a metal film forming method using the metal film forming system, and a computer storage medium.
  • aluminum is used as a material for wiring and electrodes used in electronic devices such as semiconductor devices.
  • a predetermined pattern is formed on a substrate, a trench is formed in a portion to be a wiring or an electrode, and an aluminum film is formed on the substrate including the inside of the trench.
  • a method of removing excess portions by chemical mechanical polishing or the like was generally employed.
  • a method of forming this aluminum film a method of forming an aluminum film by a vacuum process such as sputtering, vacuum deposition, or CVD (Chemical Vapor Deposition) has been used.
  • the structures of wirings and electrodes have been miniaturized and complicated, and an improvement in accuracy regarding these shapes is required.
  • the opening width of the trench on the substrate is reduced, and the aspect ratio of the trench (the value obtained by dividing the trench depth by the minimum distance of the surface opening of the trench) is increased.
  • a conventional sputtering method, vacuum evaporation method, CVD method or the like is employed when forming an aluminum film on a substrate, aluminum deposited in a region close to the opening of the trench closes the opening of the trench.
  • a defective portion that is not filled with aluminum is generated in the trench.
  • an aluminum film for example, after applying a metal mixed solution in which a complex of an amine compound and aluminum hydroxide is dissolved in a solvent, the substrate is heat-treated at a predetermined temperature, and the aluminum film is formed on the substrate.
  • a method for forming the In such a case, since the metal mixed solution has fluidity, even when the trench on the substrate is very small, the metal mixed solution flows into the trench and generation of defects in the aluminum film can be suppressed.
  • the present situation is a stage where a method using such a metal mixed solution is being experimentally performed, and it has not been considered to efficiently form the aluminum film while appropriately controlling the processing atmosphere.
  • the treatment atmosphere is controlled each time, and it takes a long time to form the aluminum film. Therefore, it is practically difficult to continuously form aluminum films on a plurality of substrates, and it cannot cope with mass production of semiconductor devices.
  • the present invention has been made in view of the above points, and an object thereof is to appropriately and efficiently form a metal film on a substrate using a metal mixed solution.
  • the present invention provides a metal film forming system for forming a metal film on a substrate, wherein a pretreatment liquid for improving fixability between the substrate and the metal film is applied on the substrate.
  • a pre-treatment station for forming a base film on the substrate, and a main process for forming a metal film on the substrate by applying a metal mixed solution of a metal complex and a solvent on the substrate on which the base film is formed.
  • the loading / unloading station for loading / unloading the substrate to / from the preprocessing station, the loading / unloading station and the preprocessing station, and the inside can be switched to an atmospheric pressure atmosphere or a reduced pressure atmosphere of an inert gas.
  • a first load lock unit that temporarily accommodates a substrate, the pretreatment station, and the main treatment station, and the interior thereof is an atmospheric atmosphere of an inert gas or
  • a second load lock unit capable of switching to a pressure atmosphere and temporarily storing a substrate, wherein the main processing station is configured to be capable of switching the inside to an atmospheric pressure atmosphere or a reduced pressure atmosphere of an inert gas.
  • the second load lock unit is provided between the preprocessing station and the main processing station, the atmosphere inside the preprocessing station and the atmosphere inside the main processing station Can be isolated. Further, the main processing station can make the processing atmosphere inside it an atmospheric pressure atmosphere of an inert gas. Therefore, the atmosphere of each treatment can be strictly controlled, and a metal film can be appropriately formed on the substrate.
  • a first load lock unit is provided between the loading / unloading station and the pretreatment station, and the metal film forming system is loaded / unloaded via the first load lock unit and the second load lock unit. The station, the preprocessing station, and the main processing station are connected together.
  • the main processing station is configured so that the inside of the main processing station can be switched to an atmospheric pressure atmosphere or a reduced pressure atmosphere of an inert gas.
  • an atmospheric pressure atmosphere of an inert gas can be quickly obtained. Therefore, the substrate can be processed by immediately starting up the metal film forming system after maintenance.
  • a metal film can be appropriately and efficiently formed on a substrate using a metal mixed solution.
  • Another aspect of the present invention is a metal film forming method for forming a metal film on a substrate using a metal film forming system, and the metal film forming system improves fixability between the substrate and the metal film.
  • a first load lock unit connected to the carry-in / out station and the pretreatment station, the inside of which can be switched to an atmospheric pressure atmosphere or a reduced pressure atmosphere of an inert gas, and which temporarily accommodates a substrate.
  • a second load lock unit connected to the pre-processing station and the main processing station, the inside of which can be switched to an atmospheric pressure atmosphere or a reduced-pressure atmosphere of an inert gas, and which temporarily stores a substrate,
  • the substrate is transported from the loading / unloading station to the first load lock unit, the atmosphere in the first load lock unit is reduced, and then the atmospheric pressure of the inert gas is reduced.
  • the third step of setting the atmosphere to an inert gas atmospheric pressure, and then transporting the substrate from the second load lock unit to the main processing station, in the main processing station A fourth step of applying the metal mixture on the substrate in an inert gas atmospheric pressure atmosphere to form a metal film on the substrate, and then the second load lock from the main processing station.
  • a sixth step of transporting the substrate to the loading / unloading station via the station and the first load lock unit a sixth step of transporting the substrate to the loading / unloading station via the station and the first load lock unit.
  • a program that operates on a computer of a control unit that controls the metal film forming system is provided.
  • a stored computer-readable computer storage medium wherein the metal film forming system applies a pretreatment liquid on a substrate to improve fixability between the substrate and the metal film, and forms a base film on the substrate.
  • a pretreatment station to be formed, a metal mixed solution of a metal complex and a solvent is applied on the substrate on which the base film is formed, a metal film is formed on the substrate, and the inside is an atmospheric atmosphere of an inert gas
  • a main processing station that can be switched to a reduced-pressure atmosphere, a loading / unloading station for loading / unloading a substrate to / from the preprocessing station, the loading / unloading station, and the front
  • a first load lock unit that is connected to a processing station and is capable of switching the inside to an atmospheric pressure atmosphere or a reduced pressure atmosphere of an inert gas and that temporarily accommodates a substrate; the preprocessing station; and the main processing station;
  • a second load lock unit that can be switched to an atmospheric pressure atmosphere or a reduced pressure atmosphere of an inert gas and temporarily accommodates a substrate, and the metal film forming method includes the carrying-in method A first step of transporting the substrate from the exit station to the first load lock unit, depressurizing the atmosphere in the
  • a metal film can be appropriately and efficiently formed on a substrate using a metal mixed solution.
  • FIG. 1 is a plan view schematically showing the configuration of a metal film forming system 1 according to the present embodiment.
  • a predetermined pattern (not shown) is formed in advance on a wafer W as a substrate. Further, in the metal film forming system 1 of the present embodiment, an aluminum film is formed on the wafer W as the metal film.
  • the metal film forming system 1 carries in, for example, a plurality of wafers W carried in and out of the cassette between the outside and the metal film forming system 1, and a wafer W carried in and out of the cassette C.
  • the exit station 2 In order to form a base film on the wafer W, the exit station 2, a preprocessing station 3 having a plurality of processing units for performing predetermined processing on the wafer W, and a metal on the wafer W on which the base film is formed
  • a main processing station 4 including a plurality of processing units for performing predetermined processing on the wafer W is provided.
  • a first load lock unit 10 is arranged between the carry-in / out station 2 and the pretreatment station 3.
  • the first load lock unit 10 is connected to the carry-in / out station 2 through a gate valve 11 and is connected to the pretreatment station 3 through a gate valve 12. Further, a second load lock unit 13 is disposed between the preprocessing station 3 and the main processing station 4. The second load lock unit 13 is connected to the preprocessing station 3 through the gate valve 14 and is connected to the main processing station 4 through the gate valve 15.
  • the loading / unloading station 2 the first load lock unit 10
  • the preprocessing station 3 the second load lock unit 13 and the main processing station 4 are arranged in the Y direction (left and right direction in FIG. 1). They are arranged side by side in this order and connected together.
  • pretreatment station 3 and the main treatment station 4 are configured to be able to switch the inside to an atmospheric pressure atmosphere or a reduced pressure atmosphere of an inert gas such as nitrogen gas, as will be described later.
  • the cassette loading table 20 is provided in the loading / unloading station 2.
  • the cassette mounting table 20 can mount a plurality of cassettes C in a row in the X direction (vertical direction in FIG. 1). That is, the carry-in / out station 2 is configured to be capable of holding a plurality of wafers W.
  • the loading / unloading station 2 is provided with a wafer transfer body 22 that can move on a transfer path 21 extending in the X direction.
  • the wafer transfer body 22 can expand and contract in the horizontal direction, and can also move in the vertical direction and the vertical direction ( ⁇ direction), and can transfer the wafer W between the cassette C and the first load lock unit 10.
  • the pretreatment station 3 heat-treats the pretreatment liquid coating unit 30 that coats the wafer W with a pretreatment liquid for improving the fixability between the wafer W and the metal film, and the wafer W coated with the pretreatment liquid.
  • the pretreatment liquid coating unit 30 is connected to the first transport unit 32 via the gate valve 33 on the negative side in the X direction of the first transport unit 32.
  • the heat treatment unit 31 is connected to the first transfer unit 32 via a gate valve 34 on the positive side in the X direction of the first transfer unit 32.
  • a wafer transfer mechanism 35 as a substrate transfer mechanism for transferring the wafer W is provided inside the first transfer unit 32.
  • the wafer transfer mechanism 35 has a pair of transfer arms 36 and 36 for supporting the wafer W.
  • the wafer transfer mechanism 35 is extendable in the horizontal direction and movable in the vertical direction and the vertical direction ( ⁇ direction).
  • the pretreatment liquid application unit 30, the heat treatment unit 31, the first load lock unit 10, and the second load lock unit 35 are movable.
  • the wafer W can be transferred to the load lock unit 13.
  • a gas supply pipe (not shown) for supplying an inert gas such as nitrogen gas and an intake pipe (not shown) for evacuating the internal atmosphere are connected to the first transfer unit 32.
  • the inside of the first transport unit 32 is configured to be switchable to an atmospheric pressure atmosphere or a reduced pressure atmosphere of an inert gas.
  • the main processing station 4 includes a metal mixed solution application unit 40 for applying a metal mixed solution onto the wafer W on which the base film is formed in the preprocessing station 3, and a pre heat treatment unit for heat treating the wafer W applied with the metal mixed solution.
  • a post-heat treatment unit 42 for further heat-treating the wafer W heat-treated in the pre-heat treatment unit 41, a metal mixed solution coating unit 40, a pre-heat treatment unit 41, a post-heat treatment unit 42, and the second load lock unit 13.
  • a second transfer unit 43 for transferring the wafer W to each unit.
  • the metal liquid mixture application unit 40 is connected to the second transport unit 43 via the gate valve 44 on the X direction negative direction side of the second transport unit 43.
  • the pre-heat treatment unit 41 is connected to the second transfer unit 43 through the gate valve 45 on the Y direction positive direction side of the second transfer unit 43.
  • the post heat treatment unit 42 is connected to the second transfer unit 43 via the gate valve 46 on the positive side in the X direction of the second transfer unit 43.
  • a wafer transfer mechanism 47 as a substrate transfer mechanism for transferring the wafer W is provided inside the second transfer unit 43.
  • the wafer transfer mechanism 47 has a pair of transfer arms 48 and 48 for supporting the wafer W.
  • the wafer transfer mechanism 47 can be expanded and contracted in the horizontal direction and movable in the vertical direction and the vertical direction ( ⁇ direction).
  • the wafer W can be transferred to the unit 13.
  • a gas supply pipe (not shown) for supplying an inert gas such as nitrogen gas and an intake pipe (not shown) for evacuating the internal atmosphere are connected to the second transfer unit 43.
  • the second transport unit 43 is configured to be able to switch the inside to an atmospheric pressure atmosphere or a reduced pressure atmosphere of an inert gas.
  • load lock chambers 100 and 101 are arranged in two upper and lower stages as shown in FIG.
  • the upper load lock chamber may be referred to as an upper load lock chamber 100
  • the lower load lock chamber may be referred to as a lower load lock chamber 101.
  • the upper load lock chamber 100 has a casing 110 that can be sealed.
  • a loading / unloading port (not shown) for the wafer W is formed on the side surface of the casing 110, and the gate valves 11 and 12 described above are provided at the loading / unloading port.
  • support pins 111 for supporting the wafer W are provided so that the wafer W can be temporarily accommodated.
  • the temperature adjustment mechanism 112 for adjusting the temperature of the wafer W supported by the support pins 111 is provided inside the side wall of the casing 110.
  • the temperature adjustment mechanism 112 includes a cooling member (not shown) such as a Peltier element or a water cooling jacket.
  • the cooling temperature of the temperature adjustment mechanism 112 is controlled by, for example, the control unit 250 described later.
  • a gas supply port 120 for supplying an inert gas such as nitrogen gas is formed inside the casing 110 on the side surface of the casing 110.
  • a gas supply pipe 122 communicating with the gas supply source 121 is connected to the gas supply port 120.
  • the gas supply pipe 122 is provided with a supply device group 123 including a valve for controlling the flow of the inert gas, a flow rate adjusting unit, and the like.
  • an air inlet 124 for reducing the atmosphere inside the casing 110 to a predetermined degree of vacuum is formed on the side surface of the casing 110.
  • an intake pipe 126 communicating with the vacuum pump 125 is connected to the intake port 124. Accordingly, the upper load lock chamber 100 is configured so that the inside thereof can be switched to an atmospheric pressure atmosphere or a reduced pressure atmosphere of an inert gas.
  • the configuration of the lower load lock chamber 101 is the same as the configuration of the upper load lock chamber 100 described above, and a description thereof will be omitted.
  • the above-described gate valves 11 and 12 are also separately provided at the loading / unloading port (not shown) of the wafer W formed on the side surface of the casing 110 of the lower load lock chamber 101.
  • the configuration of the second load lock unit 13 is the same as the configuration of the first load lock unit 10, and the description thereof is omitted.
  • the pretreatment liquid coating unit 30 has a casing 130 that can seal the inside.
  • a loading / unloading port (not shown) for the wafer W is formed on a side surface of the casing 130, and the gate valve 33 described above is provided at the loading / unloading port.
  • a gas supply port 131 for supplying an inert gas such as nitrogen gas is formed in the casing 130 on the ceiling surface of the casing 130.
  • a gas supply pipe 133 communicating with the gas supply source 132 is connected to the gas supply port 131.
  • the gas supply pipe 133 is provided with a supply device group 134 including a valve for controlling the flow of the inert gas, a flow rate adjusting unit, and the like.
  • a spin chuck 140 for attracting and holding the wafer W is provided inside the casing 130.
  • the spin chuck 140 has a horizontal upper surface, and a suction port (not shown) for sucking the wafer W, for example, is provided on the upper surface.
  • the wafer W can be sucked and held on the spin chuck 140 by suction from the suction port.
  • a drive mechanism 142 provided outside the casing 130 is attached to the spin chuck 140 via a shaft 141.
  • the drive mechanism 142 includes a motor, for example, and the drive mechanism 142 can rotate the spin chuck 140 at a predetermined speed.
  • the drive mechanism 142 is provided with a lift drive source such as a cylinder, and the spin chuck 140 can be lifted and lowered.
  • a lift drive source such as a cylinder
  • an O-ring or grease is provided at a portion where the shaft 141 passes through the casing 130.
  • a guide ring 150 having a mountain shape in cross section is provided on the lower side of the spin chuck 140, and the outer peripheral edge of the guide ring 150 is bent and extends downward.
  • a cup 151 is provided so as to surround the spin chuck 140, the wafer W held by the spin chuck 140 and the guide ring 150. The cup 151 can receive and collect the liquid scattered or dropped from the wafer W.
  • the cup 151 is formed with an opening larger than the wafer W on the upper surface so that the spin chuck 140 can be moved up and down, and a gap 152 is formed between the side peripheral surface and the outer peripheral edge of the guide ring 150.
  • the lower side of the cup 151 forms a gas-liquid separation part by forming a curved path together with the outer peripheral edge portion of the guide ring 150.
  • An intake port 153 for reducing the atmosphere in the cup 151 and the atmosphere in the casing 130 to a predetermined degree of vacuum is formed in the inner region of the bottom of the cup 151.
  • an intake pipe 155 that communicates with a vacuum pump 154 is connected to the intake port 153.
  • a drain port 156 for discharging the collected liquid is formed in the outer region of the bottom of the cup 151, and a drain tube 157 is connected to the drain port 156.
  • the pretreatment liquid coating unit 30 is configured to be able to switch the inside to an atmospheric pressure atmosphere or a reduced pressure atmosphere of an inert gas.
  • a pretreatment liquid nozzle 160 that discharges the pretreatment liquid onto the wafer W is disposed inside the casing 130 and above the spin chuck 140.
  • a supply pipe 162 communicating with the pretreatment liquid supply source 161 is connected to the pretreatment liquid nozzle 160.
  • a pretreatment liquid is stored in the pretreatment liquid supply source 161.
  • the supply pipe 162 is provided with a supply device group 163 including a valve for controlling the flow of the pretreatment liquid, a flow rate adjusting unit, and the like.
  • a liquid for improving the fixing property between the wafer W and the metal film for example, a solution in which an organometallic compound is dissolved in a solvent is used.
  • a solution in which an organometallic compound is dissolved in a solvent is used.
  • titanium oxide is used as the organometallic compound.
  • the solvent is not limited as long as it dissolves the organometallic compound.
  • ethers and hydrocarbons are used.
  • the pretreatment liquid nozzle 160 is connected to a moving mechanism (not shown) via the arm 164.
  • the pretreatment liquid nozzle 160 is moved from the standby region 165 provided on the outer side of one end side (right side in FIG. 3) of the cup 151 along the length direction (Y direction) of the casing 130 by the moving mechanism. It can move toward the side and move up and down.
  • the metal liquid mixture coating unit 40 of the main processing station 4 replaces the pretreatment liquid nozzle 160 of the pretreatment liquid coating unit 30 described above with a metal that discharges a metal complex onto the wafer W as shown in FIG.
  • a complex nozzle 170 and a solvent nozzle 171 for discharging a solvent for dissolving the metal complex are arranged.
  • the metal complex a complex having an aluminum atom is used.
  • a complex of an amine compound and aluminum hydroxide is used.
  • the solvent for dissolving the metal complex is not limited as long as it dissolves the metal complex. For example, ethers and hydrocarbons are used.
  • a supply pipe 173 communicating with the metal complex supply source 172 is connected to the metal complex nozzle 170.
  • the metal complex supply source 172 stores the above-described metal complex.
  • the supply pipe 173 is provided with a supply device group 174 including a valve for controlling the flow of the metal complex, a flow rate adjusting unit, and the like.
  • the metal complex nozzle 170 is connected to a moving mechanism (not shown) via an arm 175.
  • the metal complex nozzle 170 is moved from the standby region 176 provided on the outer side of one end side (right side in FIG. 4) of the cup 151 along the length direction (Y direction) of the casing 130 by the moving mechanism. And move up and down.
  • a supply pipe 181 communicating with the solvent supply source 180 is connected to the solvent nozzle 171.
  • the solvent supply source 180 stores the above-described solvent.
  • the supply pipe 181 is provided with a supply device group 182 including a valve for controlling the flow of the solvent, a flow rate adjusting unit, and the like.
  • the solvent nozzle 171 is connected to a moving mechanism (not shown) via the arm 183.
  • the solvent nozzle 171 is moved from the standby region 184 provided on the outer side of one end side (left side in FIG. 4) of the cup 151 to the one end side of the cup 151 along the length direction (Y direction) of the casing 130 by the moving mechanism. It is possible to move up and down.
  • the metal complex nozzle 170 and the solvent nozzle 171 include a center line (dotted line in the figure) of the discharge flow of the metal complex discharged from the metal complex nozzle 170 and the discharge of the solvent discharged from the solvent nozzle 171.
  • the flow center line (dotted line in the figure) is arranged so as to intersect on the wafer W. That is, the metal complex nozzle 170 and the solvent nozzle 171 are arranged such that their axial directions are inclined at a predetermined angle from the vertical direction.
  • the metal complex nozzle 170 and the solvent nozzle 171 are supported by separate arms 175 and 183.
  • the metal complex nozzle 170 and the solvent nozzle 171 are supported by the same arm and controlled by movement of the arms. The movement of 171 and the supply timing may be controlled.
  • the heat treatment unit 31 has a casing 190 that can be sealed.
  • a loading / unloading port (not shown) for the wafer W is formed on the side surface of the casing 190, and the gate valve 34 described above is provided at the loading / unloading port.
  • a gas supply port 191 for supplying an inert gas such as nitrogen gas is formed inside the casing 190 on the ceiling surface of the casing 190.
  • a gas supply pipe 193 communicating with the gas supply source 192 is connected to the gas supply port 191.
  • the gas supply pipe 193 is provided with a supply device group 194 including a valve for controlling the flow of the inert gas, a flow rate adjusting unit, and the like.
  • an air inlet 195 for reducing the atmosphere inside the casing 190 to a predetermined degree of vacuum is formed on the bottom surface of the casing 190.
  • an intake pipe 197 communicating with a vacuum pump 196 is connected to the intake port 195.
  • a heat treatment plate 200 on which the wafer W is placed and heat treated.
  • a holding member 201 that holds the heat treatment plate 200 is provided on the outer periphery of the heat treatment plate 200.
  • a substantially cylindrical support ring 202 that supports the holding member is provided on the outer periphery of the holding member 201.
  • the heating temperature of the heat treatment plate 200 is controlled by, for example, a control unit 250 described later.
  • lift pins 203 are provided for supporting and lifting the wafer W from below.
  • the lift pins 203 are provided so as to be inserted through the through holes 200 a formed in the hot plate 200.
  • a driving mechanism 205 is attached to the elevating pin 203 via a support member 204 provided outside the casing 190.
  • the drive mechanism 205 includes, for example, a motor, and the lift pin 203 can be raised and lowered by the drive mechanism 205.
  • an O-ring or grease is provided at a portion where the lifting pins 203 are inserted through the casing 190.
  • pre-heat treatment unit 41 and the post-heat treatment unit 42 of the main treatment station 4 are the same as those of the heat treatment unit 31 described above, and thus the description thereof is omitted.
  • the control unit 250 is a computer, for example, and has a program storage unit (not shown).
  • the program storage unit stores a program for executing the metal film forming process of the wafer W in the metal film forming system 1.
  • This program is recorded on a computer-readable storage medium H such as a computer-readable hard disk (HD), flexible disk (FD), compact disk (CD), magnetic optical desk (MO), or memory card. May have been installed in the control unit 250 from the storage medium H.
  • a computer-readable storage medium H such as a computer-readable hard disk (HD), flexible disk (FD), compact disk (CD), magnetic optical desk (MO), or memory card.
  • FIG. 7 is a flowchart showing main steps of the metal film forming process.
  • FIG. 8 shows the state of the wafer W in each step.
  • the interiors of the post heat treatment unit 42 and the second transfer unit 43 are each filled with an inert gas and maintained at atmospheric pressure.
  • the wafer W is taken out from the cassette C on the cassette mounting table 20 of the loading / unloading station 2 by the wafer transfer body 22 and transferred to the upper load lock chamber 100 of the first load lock unit 10.
  • the vacuum pump 125 is operated in a state where the gate valves 11 and 12 are closed, and the atmosphere inside the upper load lock chamber 100 is reduced to a predetermined degree of vacuum, for example, 13.3 Pa.
  • an inert gas is supplied from the inert gas supply source 121 to the inside of the upper load lock chamber 100, and the inside is filled with the inert gas to equalize the atmospheric pressure (step S1 in FIG. 7 (first step in the present invention). Process)).
  • the reason why the atmosphere inside the upper load lock chamber 100 is reduced is to quickly change the atmosphere inside the upper load lock chamber 100 to an inert gas atmosphere. For this reason, the pressure reduction of the atmosphere is not required until the vacuum atmosphere is strictly set, and the pressure may be reduced to, for example, a vacuum degree of 13.3 Pa as described above. Therefore, the atmosphere inside the upper load lock chamber 100 can be reduced to a predetermined degree of vacuum in a very short time, for example, 10 seconds.
  • the gate valves 12 and 33 are sequentially opened, and the wafer W is transferred to the pretreatment liquid coating unit 30 by the wafer transfer mechanism 35 of the first transfer unit 32.
  • the wafer W transferred into the pretreatment liquid coating unit 30 is sucked and held by the spin chuck 140.
  • the gate valve 33 is closed.
  • the wafer W is lowered to a predetermined position by the spin chuck 140, and the wafer W is rotated at a predetermined rotation number.
  • the pretreatment liquid 300 is discharged from the pretreatment liquid nozzle 160 onto the rotating wafer W.
  • the discharged pretreatment liquid 300 is diffused on the wafer W by centrifugal force, and the pretreatment liquid 300 is applied to the entire surface of the wafer W (step S2 in FIG. 7 (second step in the present invention)).
  • the pretreatment liquid 300 since the pretreatment liquid 300 has fluidity, even if a predetermined pattern is formed on the wafer W, the pretreatment liquid 300 appropriately flows into the trench of the pattern.
  • an inert gas is supplied from the gas supply source 132 to the inside of the pretreatment liquid application unit 30 and the internal atmosphere is sucked in by the vacuum pump 154.
  • the inside of the pretreatment liquid application unit 30 is maintained in an inert gas atmosphere at atmospheric pressure.
  • the gate valves 33 and 34 are sequentially opened, and the wafer W is transferred to the heat treatment unit 31 by the wafer transfer mechanism 35 of the first transfer unit 32.
  • the wafer W transferred into the heat treatment unit 31 is transferred to the lift pins 203.
  • the gate valve 34 is closed.
  • the lift pins 203 are lowered and the wafer W is placed on the heat treatment plate 200.
  • the wafer W on the heat treatment plate 200 is heated, for example, at 400 ° C. for 5 minutes, and a base film 310 along a predetermined pattern is formed on the wafer W as shown in FIG. 8B (step of FIG. 7).
  • S3 second step in the present invention
  • an inert gas is supplied from the gas supply source 192 to the inside of the heat treatment unit 31 and the internal atmosphere is sucked in by the vacuum pump 196.
  • the interior of the heat treatment unit 30 is maintained in an inert gas atmosphere at atmospheric pressure.
  • the gate valves 34 and 14 are opened in order, and the wafer W is transferred to the upper load lock chamber 100 of the second load lock unit 13 by the wafer transfer mechanism 35 of the first transfer unit 32.
  • the vacuum pump 125 is operated with the gate valves 14 and 15 closed, and the atmosphere inside the upper load lock chamber 100 is reduced to a predetermined degree of vacuum, for example, 13.3 Pa.
  • an inert gas is supplied from the inert gas supply source 121 to the inside of the upper load lock chamber 100, and the inside is filled with the inert gas to equalize the atmospheric pressure.
  • the wafer W is cooled to, for example, room temperature by the temperature adjustment mechanism 112 (step S4 in FIG. 7 (third step in the present invention)).
  • the gate valves 15 and 44 are sequentially opened, and the wafer W is transferred to the metal mixed solution coating unit 40 by the wafer transfer mechanism 47 of the second transfer unit 43.
  • the wafer W transported into the metal mixed solution coating unit 40 is sucked and held by the spin chuck 140.
  • the gate valve 44 is closed.
  • the wafer W is lowered to a predetermined position by the spin chuck 140, and the wafer W is rotated at a predetermined rotation number.
  • the metal complex 320 is discharged from the metal complex nozzle 170 and the solvent 321 is discharged from the solvent nozzle 171 to the rotating wafer W.
  • the metal complex 320 and the solvent 321 are mixed before reaching the wafer W, and a metal mixed solution 322 is generated.
  • the metal mixed liquid 322 needs to be coated on the wafer W within at least 90 seconds after being mixed once because aluminum which is a metal is easily deposited.
  • an appropriate metal mixed liquid 322 can be supplied onto the wafer W.
  • the supplied metal mixture 322 is diffused on the wafer W by centrifugal force, and the metal mixture 322 is applied to the entire surface of the wafer W (step S5 in FIG. 7 (fourth step in the present invention)). .
  • the metal mixed solution 322 since the metal mixed solution 322 has fluidity, even if a predetermined pattern is formed on the wafer W, the metal mixed solution 322 appropriately flows into the trench of the pattern.
  • an inert gas is supplied from the gas supply source 132 into the metal mixture application unit 40, and the internal atmosphere is sucked in by the vacuum pump 154. And the inside of the metal liquid mixture application unit 40 is maintained in an inert gas atmosphere at atmospheric pressure.
  • the gate valves 44 and 45 are sequentially opened, and the wafer W is transferred to the pre-heat treatment unit 41 by the wafer transfer mechanism 47 of the second transfer unit 43.
  • the wafer W transferred into the pre-heat treatment unit 41 is transferred to the lift pins 203.
  • the gate valve 45 is closed.
  • the lift pins 203 are lowered and the wafer W is placed on the heat treatment plate 200.
  • the wafer W on the heat treatment plate 200 is heated at a first temperature, for example, 150 ° C. for 5 minutes (step S6 in FIG. 7 (fourth step in the present invention)).
  • the organic component in the metal mixed solution 322 is volatilized and colloidal aluminum is deposited on the wafer W.
  • an inert gas is supplied from the gas supply source 192 to the inside of the pre-heat treatment unit 41 and the internal atmosphere is sucked by the vacuum pump 196.
  • the interior of the pre-heat treatment unit 41 is maintained in an inert gas atmosphere at atmospheric pressure.
  • the gate valves 45 and 46 are sequentially opened, and the wafer W is transferred to the post heat treatment unit 42 by the wafer transfer mechanism 47 of the second transfer unit 43.
  • the wafer W transferred into the post heat treatment unit 42 is delivered to the lift pins 203.
  • the gate valve 46 is closed.
  • the lift pins 203 are lowered and the wafer W is placed on the heat treatment plate 200.
  • the wafer W on the heat treatment plate 200 is heated at a second temperature higher than the first temperature, for example, 400 ° C. for 5 minutes (step S7 in FIG. 7 (fourth step in the present invention)). .
  • colloidal aluminum is metallized as shown in FIG.
  • a metal film 330 of an aluminum film is formed on the wafer W.
  • the fixing property between the wafer W and the metal mixed solution 322 is improved, and the metal mixed solution 322 is appropriately formed along a predetermined pattern.
  • an inert gas is supplied from the gas supply source 192 to the inside of the post heat treatment unit 42 and the internal atmosphere is sucked in by the vacuum pump 196.
  • the interior of the post heat treatment unit 42 is maintained in an inert gas atmosphere at atmospheric pressure.
  • the gate valves 46 and 15 are sequentially opened, and the wafer W is transferred to the lower load lock chamber 101 of the second load lock unit 13 by the wafer transfer mechanism 47 of the second transfer unit 43.
  • the vacuum pump 125 is operated with the gate valves 14 and 15 closed, and the atmosphere inside the lower load lock chamber 101 is reduced to a predetermined degree of vacuum, for example, 13.3 Pa.
  • an inert gas is supplied from the inert gas supply source 121 to the inside of the lower load lock chamber 101, and the inside is filled with the inert gas to equalize the atmospheric pressure.
  • the wafer W is cooled to a predetermined temperature by the temperature adjustment mechanism 112 (step S8 in FIG. 7 (fifth step in the present invention)).
  • the gate valves 14 and 12 are sequentially opened, and the wafer W is transferred to the lower load lock chamber 101 of the first load lock unit 10 by the wafer transfer mechanism 35 of the first transfer unit 32.
  • the temperature adjustment mechanism 112 cools the wafer W to, for example, room temperature.
  • the wafer W is transferred by the wafer transfer body 22 to the cassette C on the cassette mounting table 20 of the loading / unloading station 2 (step S9 in FIG. 7 (sixth step in the present invention)).
  • step S9 in FIG. 7 (sixth step in the present invention)
  • the atmosphere inside the preprocessing station 3 can be isolated. Further, the main processing station 4 can make the processing atmosphere inside it an atmospheric pressure atmosphere of an inert gas. Therefore, the atmosphere of each process can be strictly controlled, and the metal film 330 can be appropriately formed on the wafer W.
  • the pre-treatment station 3 can also set the inside treatment atmosphere to an atmospheric pressure atmosphere of an inert gas, the base film 310 can be appropriately formed on the wafer W. Thereby, the metal film 330 can be more appropriately formed on the wafer W.
  • a first load lock unit 10 is provided between the carry-in / out station 2 and the pretreatment station 3, and the metal film forming system 1 includes the first load lock unit 10 and the second load lock unit 13.
  • the carry-in / out station 2, the pre-processing station 3, and the main processing station 4 are connected together via the. Therefore, in the metal film forming system 1, the base film 310 and the metal film 330 can be continuously formed on the wafer W, and a plurality of wafers W can be processed continuously. Therefore, the metal film 330 can be efficiently formed on the wafer W.
  • the pretreatment liquid coating unit 30 and the heat treatment unit 31 are provided close to each other with the first transfer unit 32 interposed therebetween, so that the base film 310 is efficiently formed on the wafer W. be able to.
  • the metal liquid mixture application unit 40, the pre-heat treatment unit 41 and the post-heat treatment unit 42 are provided close to each other with the second transfer unit 43 interposed therebetween.
  • the film 330 can be formed efficiently.
  • the pre-heat treatment unit 41 and the post-heat treatment unit 42 heat-treat the wafer W in two stages. In this case, it is possible to shorten the time for the heat treatment of the wafer W in each of the heat treatment units 41 and 42 as compared with the case where the wafer W is heat-treated to a predetermined temperature with one heat treatment unit. Therefore, a plurality of wafers W can be heat-treated continuously and efficiently.
  • the pretreatment station 3 and the main treatment station 4 are configured to be able to switch the interior to an atmospheric pressure atmosphere or a reduced pressure atmosphere of an inert gas, for example, the inside of the pretreatment station 3 and the main treatment station 4 during maintenance. Even when the atmosphere is opened to the atmosphere, after the maintenance is completed, the atmosphere in the pretreatment station 3 and the main treatment station 4 is once evacuated to reduce the pressure, whereby the atmospheric pressure of the inert gas can be quickly changed. Therefore, immediately after the maintenance, the metal film forming system 1 can be started up and the wafer W can be processed.
  • each of the first load lock unit 10 and the second load lock unit 13 includes a temperature adjustment mechanism 112 that adjusts the wafer W to a predetermined temperature. While the wafer W is temporarily accommodated in the two load lock units 13, the temperature of the wafer W can be adjusted. Thereby, the wafer W can be processed more efficiently.
  • first load lock unit 10 and the second load lock unit 13 are respectively provided with load lock chambers 100 and 101 in two upper and lower stages, two wafers W are simultaneously accommodated and processed. be able to. Therefore, the wafer W can be processed more efficiently.
  • the metal complex 320 has an aluminum atom, but may have another metal atom, such as a copper atom, a gold atom, or a silver atom.
  • the pretreatment liquid is not limited to titanium oxide, and other palladium oxide or aluminum oxide may be used.
  • the atmosphere in the pretreatment station 3 described above may be opened to the atmosphere instead of the nitrogen gas atmosphere. In such a case, the first load lock unit 10 described above can be omitted.
  • first load lock unit 10 and the second load lock unit 13 of the above embodiment are provided with two upper and lower load lock chambers 100 and 101, respectively. It is not limited to this.
  • a load lock chamber having three or more upper and lower stages may be provided.
  • first load lock unit 10 and the second load lock unit 13 of the above embodiment are provided with load lock chambers 100 and 101 in two upper and lower stages, respectively.
  • the chambers may be arranged in the horizontal direction.
  • two load lock chambers 350 and 351 are arranged side by side in the horizontal direction (X direction in FIG. 9).
  • the load lock chamber 350 disposed on the positive side in the X direction corresponds to the upper load lock chamber 100 described above, and has the same configuration as the upper load lock chamber 100.
  • the load lock chamber 351 arranged on the negative side in the X direction corresponds to the lower load lock chamber 101 described above, and has the same configuration as the lower load lock chamber 101.
  • the load lock chambers 350 and 351 are provided with the above-described gate valves 11 and 12 at both ends thereof, and are connected to the carry-in / out station 2 and the pretreatment station 3. Then, the above-described step S ⁇ b> 1 that is performed when the wafer W is transferred from the loading / unloading station 2 to the preprocessing station 3 is performed in the load lock chamber 350. Further, the above-described step S9 performed when the wafer W is transferred from the preprocessing station 3 to the carry-in / out station 2 is performed in the load lock chamber 351.
  • the second load lock unit 13 also has two load lock chambers 360 and 361 arranged in the horizontal direction. These load lock chambers 360 and 361 are arranged side by side in the X direction.
  • the load lock chamber 360 arranged on the positive side in the X direction corresponds to the upper load lock chamber 100 described above, and has the same configuration as the upper load lock chamber 100.
  • the load lock chamber 361 arranged on the X direction negative direction side corresponds to the above-described lower load lock chamber 101 and has the same configuration as the lower load lock chamber 101.
  • the load lock chambers 360 and 361 are provided with the above-described gate valves 14 and 15 at both ends thereof, and are connected to the preprocessing station 3 and the main processing station 4.
  • step S4 performed when the wafer W is transferred from the preprocessing station 3 to the main processing station 4 is performed in the load lock chamber 360. Further, the above-described step S8 performed when the wafer W is transferred from the main processing station 4 to the preprocessing station 3 is performed in the load lock chamber 361.
  • a spare heat treatment unit 362 may be provided between the load lock chambers 360 and 361 of the second load lock unit 13.
  • the heat treatment unit 362 is connected to the first transfer unit 32 of the pretreatment station 3 via the gate valve 363 and is connected to the second transfer unit 43 of the main processing station 4 via the gate valve 364.
  • the heat treatment unit 362 is provided with a temperature adjustment mechanism (not shown) therein, and is configured to be able to switch the inside to an atmospheric pressure atmosphere or a reduced pressure atmosphere of an inert gas.
  • the heat treatment unit 362 can adjust the temperature of the wafer W to a predetermined temperature, and is used for maintenance of the load lock chambers 360 and 361, for example.
  • the main processing station 4 may be provided with a spare heat treatment unit 370.
  • the heat treatment unit 370 is connected to the second transfer unit 43 via the gate valve 371.
  • the heat treatment unit 370 is provided with a heat treatment plate (not shown) and a temperature adjustment mechanism (not shown) inside, and is configured to be able to switch the inside to an atmospheric pressure atmosphere or a reduced pressure atmosphere of an inert gas. .
  • the heat treatment unit 370 can heat the wafer W to a predetermined temperature, and is used for maintenance of the pre-heat treatment unit 41 and the post-heat treatment unit 42, for example.
  • the other structure of the metal film formation system 1 is the same as that of the metal film formation system 1 in the said embodiment, description is abbreviate
  • the pretreatment liquid coating unit 30 and the metal mixed liquid coating unit 40 of the above embodiment may include a back rinse nozzle that cleans the back surface of the wafer W, and a cup rinse nozzle that cleans the cup 151. You may have.
  • the present invention is not limited to the wafer but may be another substrate such as an FPD (flat panel display) other than the wafer or a mask reticle for a photomask. It can also be applied in some cases. Furthermore, the present invention can be applied to, for example, a manufacturing process of an organic solar cell and a film forming process in a low oxygen atmosphere.
  • FPD flat panel display

Abstract

A metal film forming system comprises: a loading/unloading station that loads/unloads substrates; a pre-treatment station that coats a substrate with a pretreatment liquid, forming a base film on the substrate; a post-treatment station that coats the substrate with a mixed metal liquid, forming a metal film on the substrate; a first load-lock unit that connects the loading/unloading station and the pre-treatment station; and a second load-lock unit that connects the pre-treatment station and the post-treatment station. The pre-treatment station, post-treatment station, first lock-load unit, and second lock-load unit are configured so that the interior of each can be switched to an atmospheric pressure atmosphere of an inert gas or to a reduced-pressure atmosphere.

Description

金属膜形成システム、金属膜形成方法及びコンピュータ記憶媒体Metal film forming system, metal film forming method, and computer storage medium
　本発明は、基板上に金属膜を形成する金属膜形成システム、当該金属膜形成システムを用いた金属膜形成方法及びコンピュータ記憶媒体に関する。 The present invention relates to a metal film forming system for forming a metal film on a substrate, a metal film forming method using the metal film forming system, and a computer storage medium.
　例えば半導体デバイスなどの電子デバイスに使用されている配線や電極の材料として、例えばアルミニウムが使用されている。従来、アルミニウムの配線や電極を形成するには、例えば基板上に所定のパターンを形成して配線又は電極となるべき部位にトレンチを形成し、当該トレンチ内を含む基板上にアルミニウム膜を形成した後、余剰の部分を化学機械研磨等により除去する方法が一般的に採用されていた。また、このアルミニウム膜を形成する方法として、例えばスパッタリング法、真空蒸着法、ＣＶＤ法（Ｃｈｅｍｉｃａｌ　Ｖａｐｏｒ　Ｄｅｐｏｓｉｔｉｏｎ、化学気相成長法）などの真空プロセスでアルミニウム膜を形成する方法が用いられていた。 For example, aluminum is used as a material for wiring and electrodes used in electronic devices such as semiconductor devices. Conventionally, in order to form an aluminum wiring or electrode, for example, a predetermined pattern is formed on a substrate, a trench is formed in a portion to be a wiring or an electrode, and an aluminum film is formed on the substrate including the inside of the trench. Thereafter, a method of removing excess portions by chemical mechanical polishing or the like was generally employed. Further, as a method of forming this aluminum film, a method of forming an aluminum film by a vacuum process such as sputtering, vacuum deposition, or CVD (Chemical Vapor Deposition) has been used.
　ところで、近年、半導体デバイスのさらなる高集積化を図るため、配線や電極の構造の微細化、複雑化が進んでおり、これらの形状に関する精度の向上が要求されている。かかる場合、基板上のトレンチの開口幅が小さくなり、またトレンチのアスペクト比（トレンチの深さをトレンチの表面開口部の最小距離で除した値）が大きくなる。このため、基板上にアルミニウム膜を形成する際に、従来のスパッタリング法、真空蒸着法、ＣＶＤ法などを採用すると、トレンチの開口に近い領域に堆積したアルミニウムがトレンチの開口を閉塞し、その結果としてトレンチの内部にアルミニウムが充填されない欠陥部分が生じるおそれがある。 Incidentally, in recent years, in order to further increase the integration of semiconductor devices, the structures of wirings and electrodes have been miniaturized and complicated, and an improvement in accuracy regarding these shapes is required. In such a case, the opening width of the trench on the substrate is reduced, and the aspect ratio of the trench (the value obtained by dividing the trench depth by the minimum distance of the surface opening of the trench) is increased. For this reason, when a conventional sputtering method, vacuum evaporation method, CVD method or the like is employed when forming an aluminum film on a substrate, aluminum deposited in a region close to the opening of the trench closes the opening of the trench. As a result, there is a possibility that a defective portion that is not filled with aluminum is generated in the trench.
　そこで、アルミニウム膜を形成する方法として、例えばアミン化合物と水酸化アルミニウムの錯体を溶媒に溶解した金属混合液を基板上に塗布した後、所定の温度で基板を熱処理して、基板上にアルミニウム膜を形成する方法が提案されている。かかる場合、金属混合液が流動性を有するため、基板上のトレンチが微小の場合でも、当該トレンチ内に金属混合液が流入し、アルミニウム膜の欠陥の発生を抑制できる。また、基板とアルミニウム膜との定着性を向上させるため、金属混合液を基板上に塗布する前に、基板上に有機金属化合物の下地膜を形成することも提案されている。この下地膜は、例えばチタン原子を含む有機金属化合物の溶液を基板上に塗布した後、所定の温度で基板を熱処理して形成される（特許文献１）。 Therefore, as a method of forming an aluminum film, for example, after applying a metal mixed solution in which a complex of an amine compound and aluminum hydroxide is dissolved in a solvent, the substrate is heat-treated at a predetermined temperature, and the aluminum film is formed on the substrate. There has been proposed a method for forming the. In such a case, since the metal mixed solution has fluidity, even when the trench on the substrate is very small, the metal mixed solution flows into the trench and generation of defects in the aluminum film can be suppressed. In order to improve the fixability between the substrate and the aluminum film, it has also been proposed to form a base film of an organometallic compound on the substrate before the metal mixed solution is applied onto the substrate. This base film is formed, for example, by applying a solution of an organometallic compound containing titanium atoms on a substrate and then heat-treating the substrate at a predetermined temperature (Patent Document 1).
日本国特開２００９－２２７８６４号公報Japanese Unexamined Patent Publication No. 2009-227864
　特許文献１の方法を用いて基板上にアルミニウム膜を形成する場合、処理雰囲気中に微量の酸素や水分が存在すると、金属混合液はこれら酸素や水分と反応して劣化するおそれがある。このため、低酸素濃度且つ低水分濃度の処理雰囲気、例えば窒素ガス等の不活性ガス雰囲気中で、金属混合液の塗布処理や基板の熱処理を行う必要がある。また、かかる金属混合液の劣化を避けるため、アルミニウム膜を形成する際の処理雰囲気と下地膜を形成する際の処理雰囲気とを隔離する必要もある。 In the case of forming an aluminum film on a substrate using the method of Patent Document 1, if a trace amount of oxygen or moisture is present in the processing atmosphere, the metal mixture may react with these oxygen or moisture and deteriorate. For this reason, it is necessary to perform the coating process of the metal mixture and the heat treatment of the substrate in a processing atmosphere having a low oxygen concentration and a low water concentration, for example, an inert gas atmosphere such as nitrogen gas. In addition, in order to avoid the deterioration of the metal mixed solution, it is necessary to separate the processing atmosphere when forming the aluminum film from the processing atmosphere when forming the base film.
　このように金属混合液を用いた方法では、各処理の処理雰囲気を厳格に制御する必要がある。しかしながら、現状は、かかる金属混合液を用いた方法が試験的に行われている段階であり、処理雰囲気を適切に制御しつつアルミニウム膜の形成を効率よく行うことまでは考慮されていない。例えば各処理を行う際に、都度処理雰囲気を制御しており、アルミニウム膜を形成するのに多大な時間を要している。したがって、複数の基板に対してアルミニウム膜を連続的に形成することは現実的に困難であり、半導体デバイスの量産化に対応できていない。 As described above, in the method using the metal mixed solution, it is necessary to strictly control the treatment atmosphere of each treatment. However, the present situation is a stage where a method using such a metal mixed solution is being experimentally performed, and it has not been considered to efficiently form the aluminum film while appropriately controlling the processing atmosphere. For example, when each treatment is performed, the treatment atmosphere is controlled each time, and it takes a long time to form the aluminum film. Therefore, it is practically difficult to continuously form aluminum films on a plurality of substrates, and it cannot cope with mass production of semiconductor devices.
　本発明は、かかる点に鑑みてなされたものであり、金属混合液を用いて基板上に金属膜を適切且つ効率よく形成することを目的とする。 The present invention has been made in view of the above points, and an object thereof is to appropriately and efficiently form a metal film on a substrate using a metal mixed solution.
　前記の目的を達成するため、本発明は、基板上に金属膜を形成する金属膜形成システムであって、基板と金属膜との定着性を向上させるための前処理液を基板上に塗布して、当該基板上に下地膜を形成する前処理ステーションと、前記下地膜が形成された基板上に金属錯体と溶媒の金属混合液を塗布して、当該基板上に金属膜を形成する主処理ステーションと、前記前処理ステーションに対して基板を搬入出する搬入出ステーションと、前記搬入出ステーションと前記前処理ステーションとに接続され、内部を不活性ガスの大気圧雰囲気又は減圧雰囲気に切り替え可能で、且つ基板を一時的に収容する第１のロードロックユニットと、前記前処理ステーションと前記主処理ステーションとに接続され、内部を不活性ガスの大気圧雰囲気又は減圧雰囲気に切り替え可能で、且つ基板を一時的に収容する第２のロードロックユニットと、を有し、前記主処理ステーションは、内部を不活性ガスの大気圧雰囲気又は減圧雰囲気に切り替え可能に構成されている。 In order to achieve the above object, the present invention provides a metal film forming system for forming a metal film on a substrate, wherein a pretreatment liquid for improving fixability between the substrate and the metal film is applied on the substrate. A pre-treatment station for forming a base film on the substrate, and a main process for forming a metal film on the substrate by applying a metal mixed solution of a metal complex and a solvent on the substrate on which the base film is formed. Connected to the station, the loading / unloading station for loading / unloading the substrate to / from the preprocessing station, the loading / unloading station and the preprocessing station, and the inside can be switched to an atmospheric pressure atmosphere or a reduced pressure atmosphere of an inert gas. And a first load lock unit that temporarily accommodates a substrate, the pretreatment station, and the main treatment station, and the interior thereof is an atmospheric atmosphere of an inert gas or A second load lock unit capable of switching to a pressure atmosphere and temporarily storing a substrate, wherein the main processing station is configured to be capable of switching the inside to an atmospheric pressure atmosphere or a reduced pressure atmosphere of an inert gas. Has been.
　本発明の金属膜形成システムには、前処理ステーションと主処理ステーションとの間に第２のロードロックユニットが設けられているので、前処理ステーションの内部の雰囲気と主処理ステーションの内部の雰囲気とを隔離することができる。また、主処理ステーションは、その内部の処理雰囲気を不活性ガスの大気圧雰囲気にすることができる。したがって、各処理の雰囲気を厳格に制御することができ、基板上に金属膜を適切に形成することができる。また、搬入出ステーションと前処理ステーションとの間に第１のロードロックユニットが設けられており、金属膜形成システムは、第１のロードロックユニットと第２のロードロックユニットを介して、搬入出ステーション、前処理ステーション及び主処理ステーションが一体に接続された構成を有している。このため、当該金属膜形成システムにおいて、基板上に下地膜と金属膜を連続的に形成することができ、しかも複数の基板を連続して処理することができる。さらに、主処理ステーションは、その内部を不活性ガスの大気圧雰囲気又は減圧雰囲気に切り替え可能に構成されているので、例えばメンテナンス時に主処理ステーションの内部を大気に開放した場合でも、メンテナンス終了後、主処理ステーション内の雰囲気を一旦真空引きして減圧することで、迅速に不活性ガスの大気圧雰囲気にすることができる。したがって、メンテナンス後、直ぐに金属膜形成システムを立ち上げて基板を処理することができる。以上のように、本発明によれば、金属混合液を用いて基板上に金属膜を適切且つ効率よく形成することができる。 In the metal film forming system of the present invention, since the second load lock unit is provided between the preprocessing station and the main processing station, the atmosphere inside the preprocessing station and the atmosphere inside the main processing station Can be isolated. Further, the main processing station can make the processing atmosphere inside it an atmospheric pressure atmosphere of an inert gas. Therefore, the atmosphere of each treatment can be strictly controlled, and a metal film can be appropriately formed on the substrate. In addition, a first load lock unit is provided between the loading / unloading station and the pretreatment station, and the metal film forming system is loaded / unloaded via the first load lock unit and the second load lock unit. The station, the preprocessing station, and the main processing station are connected together. For this reason, in the said metal film formation system, a base film and a metal film can be continuously formed on a board | substrate, and a several board | substrate can be processed continuously. Furthermore, the main processing station is configured so that the inside of the main processing station can be switched to an atmospheric pressure atmosphere or a reduced pressure atmosphere of an inert gas.For example, even when the inside of the main processing station is opened to the atmosphere during maintenance, By temporarily evacuating and reducing the atmosphere in the main processing station, an atmospheric pressure atmosphere of an inert gas can be quickly obtained. Therefore, the substrate can be processed by immediately starting up the metal film forming system after maintenance. As described above, according to the present invention, a metal film can be appropriately and efficiently formed on a substrate using a metal mixed solution.
　別な観点による本発明は、金属膜形成システムを用いて、基板上に金属膜を形成する金属膜形成方法であって、前記金属膜形成システムは、基板と金属膜との定着性を向上させるための前処理液を基板上に塗布して、当該基板上に下地膜を形成する前処理ステーションと、前記下地膜が形成された基板上に金属錯体と溶媒の金属混合液を塗布して、当該基板上に金属膜を形成し、且つ内部を不活性ガスの大気圧雰囲気又は減圧雰囲気に切り替え可能な主処理ステーションと、前記前処理ステーションに対して基板を搬入出する搬入出ステーションと、前記搬入出ステーションと前記前処理ステーションとに接続され、内部を不活性ガスの大気圧雰囲気又は減圧雰囲気に切り替え可能で、且つ基板を一時的に収容する第１のロードロックユニットと、前記前処理ステーションと前記主処理ステーションとに接続され、内部を不活性ガスの大気圧雰囲気又は減圧雰囲気に切り替え可能で、且つ基板を一時的に収容する第２のロードロックユニットと、を有し、前記金属膜形成方法は、前記搬入出ステーションから前記第１のロードロックユニットに基板を搬送し、当該第１のロードロックユニット内の雰囲気を減圧した後、不活性ガスの大気圧雰囲気にする第１の工程と、その後、前記第１のロードロックユニットから前記前処理ステーションに基板を搬送し、当該前処理ステーションにおいて、前記前処理液を基板上に塗布して、当該基板上に下地膜を形成する第２の工程と、その後、前記前処理ステーションから前記第２のロードロックユニットに基板を搬送し、当該第２のロードロックユニット内の雰囲気を減圧した後、不活性ガスの大気圧雰囲気にする第３の工程と、その後、前記第２のロードロックユニットから前記主処理ステーションに基板を搬送し、当該主処理ステーションにおいて、不活性ガスの大気圧雰囲気中で前記金属混合液を基板上に塗布して、当該基板上に金属膜を形成する第４の工程と、その後、前記主処理ステーションから前記第２のロードロックユニットに基板を搬送し、当該第２のロードロックユニット内の雰囲気を減圧した後、不活性ガスの大気圧雰囲気にする第５の工程と、その後、前記第２のロードロックユニットから前記前処理ステーション及び前記第１のロードロックユニットを介して前記搬入出ステーションに基板を搬送する第６の工程と、を有する。 Another aspect of the present invention is a metal film forming method for forming a metal film on a substrate using a metal film forming system, and the metal film forming system improves fixability between the substrate and the metal film. A pretreatment liquid for applying a pretreatment liquid on the substrate, forming a base film on the substrate, and applying a metal mixed solution of a metal complex and a solvent on the substrate on which the base film is formed, A main processing station capable of forming a metal film on the substrate and switching the inside to an atmospheric pressure atmosphere or a reduced pressure atmosphere of an inert gas; a loading / unloading station for loading / unloading the substrate to / from the preprocessing station; A first load lock unit connected to the carry-in / out station and the pretreatment station, the inside of which can be switched to an atmospheric pressure atmosphere or a reduced pressure atmosphere of an inert gas, and which temporarily accommodates a substrate. A second load lock unit connected to the pre-processing station and the main processing station, the inside of which can be switched to an atmospheric pressure atmosphere or a reduced-pressure atmosphere of an inert gas, and which temporarily stores a substrate, In the metal film forming method, the substrate is transported from the loading / unloading station to the first load lock unit, the atmosphere in the first load lock unit is reduced, and then the atmospheric pressure of the inert gas is reduced. A first step of creating an atmosphere, and then transporting the substrate from the first load lock unit to the pretreatment station, applying the pretreatment liquid onto the substrate at the pretreatment station, A second step of forming a base film on the substrate, and then transporting the substrate from the pretreatment station to the second load lock unit. After depressurizing the atmosphere in the lock unit, the third step of setting the atmosphere to an inert gas atmospheric pressure, and then transporting the substrate from the second load lock unit to the main processing station, in the main processing station A fourth step of applying the metal mixture on the substrate in an inert gas atmospheric pressure atmosphere to form a metal film on the substrate, and then the second load lock from the main processing station. A fifth step of transporting the substrate to the unit, depressurizing the atmosphere in the second load lock unit, and then setting the atmosphere to an inert gas atmospheric pressure, and then the pretreatment from the second load lock unit. And a sixth step of transporting the substrate to the loading / unloading station via the station and the first load lock unit.
　また別な観点による本発明は、基板上に金属膜を形成する金属膜形成方法を金属膜形成システムによって実行させるために、当該金属膜形成システムを制御する制御部のコンピュータ上で動作するプログラムを格納した読み取り可能なコンピュータ記憶媒体であって、前記金属膜形成システムは、基板と金属膜との定着性を向上させるための前処理液を基板上に塗布して、当該基板上に下地膜を形成する前処理ステーションと、前記下地膜が形成された基板上に金属錯体と溶媒の金属混合液を塗布して、当該基板上に金属膜を形成し、且つ内部を不活性ガスの大気圧雰囲気又は減圧雰囲気に切り替え可能な主処理ステーションと、前記前処理ステーションに対して基板を搬入出する搬入出ステーションと、前記搬入出ステーションと前記前処理ステーションとに接続され、内部を不活性ガスの大気圧雰囲気又は減圧雰囲気に切り替え可能で、且つ基板を一時的に収容する第１のロードロックユニットと、前記前処理ステーションと前記主処理ステーションとに接続され、内部を不活性ガスの大気圧雰囲気又は減圧雰囲気に切り替え可能で、且つ基板を一時的に収容する第２のロードロックユニットと、を有し、前記金属膜形成方法は、前記搬入出ステーションから前記第１のロードロックユニットに基板を搬送し、当該第１のロードロックユニット内の雰囲気を減圧した後、不活性ガスの大気圧雰囲気にする第１の工程と、その後、前記第１のロードロックユニットから前記前処理ステーションに基板を搬送し、当該前処理ステーションにおいて、前記前処理液を基板上に塗布して、当該基板上に下地膜を形成する第２の工程と、その後、前記前処理ステーションから前記第２のロードロックユニットに基板を搬送し、当該第２のロードロックユニット内の雰囲気を減圧した後、不活性ガスの大気圧雰囲気にする第３の工程と、その後、前記第２のロードロックユニットから前記主処理ステーションに基板を搬送し、当該主処理ステーションにおいて、不活性ガスの大気圧雰囲気中で前記金属混合液を基板上に塗布して、当該基板上に金属膜を形成する第４の工程と、その後、前記主処理ステーションから前記第２のロードロックユニットに基板を搬送し、当該第２のロードロックユニット内の雰囲気を減圧した後、不活性ガスの大気圧雰囲気にする第５の工程と、その後、前記第２のロードロックユニットから前記前処理ステーション及び前記第１のロードロックユニットを介して前記搬入出ステーションに基板を搬送する第６の工程と、を有する。 According to another aspect of the present invention, in order to cause a metal film forming system to execute a metal film forming method for forming a metal film on a substrate, a program that operates on a computer of a control unit that controls the metal film forming system is provided. A stored computer-readable computer storage medium, wherein the metal film forming system applies a pretreatment liquid on a substrate to improve fixability between the substrate and the metal film, and forms a base film on the substrate. A pretreatment station to be formed, a metal mixed solution of a metal complex and a solvent is applied on the substrate on which the base film is formed, a metal film is formed on the substrate, and the inside is an atmospheric atmosphere of an inert gas Alternatively, a main processing station that can be switched to a reduced-pressure atmosphere, a loading / unloading station for loading / unloading a substrate to / from the preprocessing station, the loading / unloading station, and the front A first load lock unit that is connected to a processing station and is capable of switching the inside to an atmospheric pressure atmosphere or a reduced pressure atmosphere of an inert gas and that temporarily accommodates a substrate; the preprocessing station; and the main processing station; A second load lock unit that can be switched to an atmospheric pressure atmosphere or a reduced pressure atmosphere of an inert gas and temporarily accommodates a substrate, and the metal film forming method includes the carrying-in method A first step of transporting the substrate from the exit station to the first load lock unit, depressurizing the atmosphere in the first load lock unit, and then setting the atmosphere to an inert gas atmospheric pressure; The substrate is transported from one load lock unit to the pretreatment station, and the pretreatment liquid is applied onto the substrate at the pretreatment station. A second step of forming a base film on the substrate, and then transporting the substrate from the pretreatment station to the second load lock unit and depressurizing the atmosphere in the second load lock unit. A third step of bringing the inert gas into an atmospheric pressure atmosphere, and then transferring the substrate from the second load lock unit to the main processing station, where the main processing station is in an atmospheric atmosphere of the inert gas. And applying the metal mixture onto the substrate to form a metal film on the substrate, and then transporting the substrate from the main processing station to the second load lock unit. A second step of reducing the atmosphere in the load lock unit 2 to an atmospheric pressure of an inert gas, and then starting the pretreatment from the second load lock unit. And a sixth step of transporting the substrate to the carry-in / out station via the physical station and the first load lock unit.
　本発明によれば、金属混合液を用いて基板上に金属膜を適切且つ効率よく形成することができる。 According to the present invention, a metal film can be appropriately and efficiently formed on a substrate using a metal mixed solution.
本実施の形態にかかる金属膜形成システムの構成の概略を示す平面図である。It is a top view which shows the outline of a structure of the metal film formation system concerning this Embodiment. 第１のロードロックユニットの構成の概略を示す縦断面図である。It is a longitudinal cross-sectional view which shows the outline of a structure of a 1st load lock unit. 前処理液塗布ユニットの構成の概略を示す縦断面図である。It is a longitudinal cross-sectional view which shows the outline of a structure of a pretreatment liquid application unit. 金属混合液塗布ユニットの構成の概略を示す縦断面図である。It is a longitudinal cross-sectional view which shows the outline of a structure of a metal liquid mixture application unit. 金属錯体ノズルと溶媒ノズルの配置を示した説明図である。It is explanatory drawing which showed arrangement | positioning of a metal complex nozzle and a solvent nozzle. 熱処理ユニットの構成の概略を示す縦断面図である。It is a longitudinal cross-sectional view which shows the outline of a structure of the heat processing unit. 金属膜形成処理の主な工程を示すフローチャートである。It is a flowchart which shows the main processes of a metal film formation process. 金属膜形成処理の各工程におけるウェハの状態を示した説明図であり、（ａ）はウェハ上に前処理液が塗布された様子を示し、（ｂ）はウェハ上に下地膜が形成された様子を示し、（ｃ）はウェハ上に金属混合液が塗布された様子を示し、（ｄ）はウェハ上に金属膜が形成された様子を示す。It is explanatory drawing which showed the state of the wafer in each process of metal film formation processing, (a) shows a mode that the pre-processing liquid was apply | coated on the wafer, (b) showed the base film formed on the wafer (C) shows a state in which a metal mixed solution is applied on the wafer, and (d) shows a state in which a metal film is formed on the wafer. 他の実施の形態にかかる金属膜形成システムの構成の概略を示す平面図である。It is a top view which shows the outline of a structure of the metal film formation system concerning other embodiment.
　以下、本発明の実施の形態について説明する。図１は本実施の形態にかかる金属膜形成システム１の構成の概略を示す平面図である。なお、基板としてのウェハＷ上には、予め所定のパターン（図示せず）が形成されている。また、本実施の形態の金属膜形成システム１では、金属膜として、アルミニウム膜をウェハＷ上に形成する。 Hereinafter, embodiments of the present invention will be described. FIG. 1 is a plan view schematically showing the configuration of a metal film forming system 1 according to the present embodiment. A predetermined pattern (not shown) is formed in advance on a wafer W as a substrate. Further, in the metal film forming system 1 of the present embodiment, an aluminum film is formed on the wafer W as the metal film.
　金属膜形成システム１は、図１に示すように例えば複数のウェハＷをカセット単位で外部と金属膜形成システム１との間で搬入出したり、カセットＣに対してウェハＷを搬入出したりする搬入出ステーション２と、ウェハＷ上に下地膜を形成するため、ウェハＷに対して所定の処理を施す複数の処理ユニットを備えた前処理ステーション３と、下地膜が形成されたウェハＷ上に金属膜を形成するため、ウェハＷに対して所定の処理を施す複数の処理ユニットを備えた主処理ステーション４とを有している。搬入出ステーション２と前処理ステーション３との間には、第１のロードロックユニット１０が配置されている。第１のロードロックユニット１０は、ゲートバルブ１１を介して搬入出ステーション２に接続されると共に、ゲートバルブ１２を介して前処理ステーション３に接続されている。また、前処理ステーション３と主処理ステーション４との間には、第２のロードロックユニット１３が配置されている。第２のロードロックユニット１３は、ゲートバルブ１４を介して前処理ステーション３に接続されると共に、ゲートバルブ１５を介して主処理ステーション４とに接続されている。金属膜形成システム１は、これら搬入出ステーション２、第１のロードロックユニット１０、前処理ステーション３、第２のロードロックユニット１３、主処理ステーション４をＹ方向（図１中の左右方向）にこの順で並べて配置して、一体に接続した構成を有している。 As shown in FIG. 1, the metal film forming system 1 carries in, for example, a plurality of wafers W carried in and out of the cassette between the outside and the metal film forming system 1, and a wafer W carried in and out of the cassette C. In order to form a base film on the wafer W, the exit station 2, a preprocessing station 3 having a plurality of processing units for performing predetermined processing on the wafer W, and a metal on the wafer W on which the base film is formed In order to form a film, a main processing station 4 including a plurality of processing units for performing predetermined processing on the wafer W is provided. A first load lock unit 10 is arranged between the carry-in / out station 2 and the pretreatment station 3. The first load lock unit 10 is connected to the carry-in / out station 2 through a gate valve 11 and is connected to the pretreatment station 3 through a gate valve 12. Further, a second load lock unit 13 is disposed between the preprocessing station 3 and the main processing station 4. The second load lock unit 13 is connected to the preprocessing station 3 through the gate valve 14 and is connected to the main processing station 4 through the gate valve 15. In the metal film forming system 1, the loading / unloading station 2, the first load lock unit 10, the preprocessing station 3, the second load lock unit 13, and the main processing station 4 are arranged in the Y direction (left and right direction in FIG. 1). They are arranged side by side in this order and connected together.
　なお、前処理ステーション３と主処理ステーション４は、後述するように、それぞれ内部を例えば窒素ガスなどの不活性ガスの大気圧雰囲気又は減圧雰囲気に切り替え可能に構成されている。 Note that the pretreatment station 3 and the main treatment station 4 are configured to be able to switch the inside to an atmospheric pressure atmosphere or a reduced pressure atmosphere of an inert gas such as nitrogen gas, as will be described later.
　搬入出ステーション２には、カセット載置台２０が設けられている。カセット載置台２０は、複数のカセットＣをＸ方向（図１中の上下方向）に一列に載置自在になっている。すなわち、搬入出ステーション２は、複数のウェハＷを保有可能に構成されている。 The cassette loading table 20 is provided in the loading / unloading station 2. The cassette mounting table 20 can mount a plurality of cassettes C in a row in the X direction (vertical direction in FIG. 1). That is, the carry-in / out station 2 is configured to be capable of holding a plurality of wafers W.
　搬入出ステーション２には、Ｘ方向に延伸する搬送路２１上を移動可能なウェハ搬送体２２が設けられている。ウェハ搬送体２２は、水平方向に伸縮自在、且つ鉛直方向及び鉛直周り（θ方向）にも移動自在であり、カセットＣと第１のロードロックユニット１０との間でウェハＷを搬送できる。 The loading / unloading station 2 is provided with a wafer transfer body 22 that can move on a transfer path 21 extending in the X direction. The wafer transfer body 22 can expand and contract in the horizontal direction, and can also move in the vertical direction and the vertical direction (θ direction), and can transfer the wafer W between the cassette C and the first load lock unit 10.
　前処理ステーション３は、ウェハＷと金属膜との定着性を向上させるための前処理液をウェハＷ上に塗布する前処理液塗布ユニット３０と、前処理液が塗布されたウェハＷを熱処理する熱処理ユニット３１と、前処理液塗布ユニット３０、熱処理ユニット３１、第１のロードロックユニット１０及び第２のロードロックユニット１３に接続され、各ユニットにウェハＷを搬送する第１の搬送ユニット３２とを有している。前処理液塗布ユニット３０は、第１の搬送ユニット３２のＸ方向負方向側において、ゲートバルブ３３を介して第１の搬送ユニット３２に接続されている。熱処理ユニット３１は、第１の搬送ユニット３２のＸ方向正方向側において、ゲートバルブ３４を介して第１の搬送ユニット３２に接続されている。 The pretreatment station 3 heat-treats the pretreatment liquid coating unit 30 that coats the wafer W with a pretreatment liquid for improving the fixability between the wafer W and the metal film, and the wafer W coated with the pretreatment liquid. A heat treatment unit 31, a pretreatment liquid application unit 30, a heat treatment unit 31, a first load lock unit 10, and a second load lock unit 13, and a first conveyance unit 32 that conveys a wafer W to each unit; have. The pretreatment liquid coating unit 30 is connected to the first transport unit 32 via the gate valve 33 on the negative side in the X direction of the first transport unit 32. The heat treatment unit 31 is connected to the first transfer unit 32 via a gate valve 34 on the positive side in the X direction of the first transfer unit 32.
　第１の搬送ユニット３２の内部には、ウェハＷを搬送する基板搬送機構としてのウェハ搬送機構３５が設けられている。ウェハ搬送機構３５は、ウェハＷを支持するための一対の搬送アーム３６、３６を有している。ウェハ搬送機構３５は、水平方向に伸縮自在、且つ鉛直方向及び鉛直周り（θ方向）に移動自在であり、前処理液塗布ユニット３０、熱処理ユニット３１、第１のロードロックユニット１０及び第２のロードロックユニット１３にウェハＷを搬送できる。 Inside the first transfer unit 32, a wafer transfer mechanism 35 as a substrate transfer mechanism for transferring the wafer W is provided. The wafer transfer mechanism 35 has a pair of transfer arms 36 and 36 for supporting the wafer W. The wafer transfer mechanism 35 is extendable in the horizontal direction and movable in the vertical direction and the vertical direction (θ direction). The pretreatment liquid application unit 30, the heat treatment unit 31, the first load lock unit 10, and the second load lock unit 35 are movable. The wafer W can be transferred to the load lock unit 13.
　また、第１の搬送ユニット３２には、内部に例えば窒素ガスなどの不活性ガスを供給するガス供給管（図示せず）と、内部の雰囲気を真空引きする吸気管（図示せず）が接続されている。すなわち、第１の搬送ユニット３２は、その内部を不活性ガスの大気圧雰囲気又は減圧雰囲気に切り替え可能に構成されている。 Further, a gas supply pipe (not shown) for supplying an inert gas such as nitrogen gas and an intake pipe (not shown) for evacuating the internal atmosphere are connected to the first transfer unit 32. Has been. That is, the inside of the first transport unit 32 is configured to be switchable to an atmospheric pressure atmosphere or a reduced pressure atmosphere of an inert gas.
　主処理ステーション４は、前処理ステーション３で下地膜が形成されたウェハＷ上に金属混合液を塗布する金属混合液塗布ユニット４０と、金属混合液が塗布されたウェハＷを熱処理する前熱処理ユニット４１と、前熱処理ユニット４１で熱処理されたウェハＷをさらに熱処理する後熱処理ユニット４２と、金属混合液塗布ユニット４０、前熱処理ユニット４１、後熱処理ユニット４２及び第２のロードロックユニット１３に接続され、各ユニットにウェハＷを搬送する第２の搬送ユニット４３とを有している。金属混合液塗布ユニット４０は、第２の搬送ユニット４３のＸ方向負方向側において、ゲートバルブ４４を介して第２の搬送ユニット４３に接続されている。前熱処理ユニット４１は、第２の搬送ユニット４３のＹ方向正方向側において、ゲートバルブ４５を介して第２の搬送ユニット４３に接続されている。後熱処理ユニット４２は、第２の搬送ユニット４３のＸ方向正方向側において、ゲートバルブ４６を介して第２の搬送ユニット４３に接続されている。 The main processing station 4 includes a metal mixed solution application unit 40 for applying a metal mixed solution onto the wafer W on which the base film is formed in the preprocessing station 3, and a pre heat treatment unit for heat treating the wafer W applied with the metal mixed solution. 41, a post-heat treatment unit 42 for further heat-treating the wafer W heat-treated in the pre-heat treatment unit 41, a metal mixed solution coating unit 40, a pre-heat treatment unit 41, a post-heat treatment unit 42, and the second load lock unit 13. And a second transfer unit 43 for transferring the wafer W to each unit. The metal liquid mixture application unit 40 is connected to the second transport unit 43 via the gate valve 44 on the X direction negative direction side of the second transport unit 43. The pre-heat treatment unit 41 is connected to the second transfer unit 43 through the gate valve 45 on the Y direction positive direction side of the second transfer unit 43. The post heat treatment unit 42 is connected to the second transfer unit 43 via the gate valve 46 on the positive side in the X direction of the second transfer unit 43.
　第２の搬送ユニット４３の内部には、ウェハＷを搬送する基板搬送機構としてのウェハ搬送機構４７が設けられている。ウェハ搬送機構４７は、ウェハＷを支持するための一対の搬送アーム４８、４８を有している。ウェハ搬送機構４７は、水平方向に伸縮自在、且つ鉛直方向及び鉛直周り（θ方向）に移動自在であり、金属混合液塗布ユニット４０、前熱処理ユニット４１、後熱処理ユニット４２及び第２のロードロックユニット１３にウェハＷを搬送できる。 Inside the second transfer unit 43, a wafer transfer mechanism 47 as a substrate transfer mechanism for transferring the wafer W is provided. The wafer transfer mechanism 47 has a pair of transfer arms 48 and 48 for supporting the wafer W. The wafer transfer mechanism 47 can be expanded and contracted in the horizontal direction and movable in the vertical direction and the vertical direction (θ direction). The metal liquid mixture application unit 40, the pre-heat treatment unit 41, the post-heat treatment unit 42, and the second load lock. The wafer W can be transferred to the unit 13.
　また、第２の搬送ユニット４３には、内部に例えば窒素ガスなどの不活性ガスを供給するガス供給管（図示せず）と、内部の雰囲気を真空引きする吸気管（図示せず）が接続されている。すなわち、第２の搬送ユニット４３は、その内部を不活性ガスの大気圧雰囲気又は減圧雰囲気に切り替え可能に構成されている。 Further, a gas supply pipe (not shown) for supplying an inert gas such as nitrogen gas and an intake pipe (not shown) for evacuating the internal atmosphere are connected to the second transfer unit 43. Has been. That is, the second transport unit 43 is configured to be able to switch the inside to an atmospheric pressure atmosphere or a reduced pressure atmosphere of an inert gas.
　次に、上述した第１のロードロックユニット１０と第２のロードロックユニット１３の構成について説明する。 Next, the configuration of the first load lock unit 10 and the second load lock unit 13 described above will be described.
　第１のロードロックユニット１０には、図２に示すように上下２段にロードロック室１００、１０１が配置されている。以下、上段のロードロック室を上段ロードロック室１００といい、下段のロードロック室を下段ロードロック室１０１という場合がある。 In the first load lock unit 10, load lock chambers 100 and 101 are arranged in two upper and lower stages as shown in FIG. Hereinafter, the upper load lock chamber may be referred to as an upper load lock chamber 100, and the lower load lock chamber may be referred to as a lower load lock chamber 101.
　上段ロードロック室１００は、内部を密閉可能なケーシング１１０を有している。ケーシング１１０の側面にはウェハＷの搬入出口（図示せず）が形成され、当該搬入出口には上述したゲートバルブ１１、１２が設けられている。ケーシング１１０の内部には、ウェハＷを支持する支持ピン１１１が設けられ、ウェハＷを一時的に収容できるように構成されている。 The upper load lock chamber 100 has a casing 110 that can be sealed. A loading / unloading port (not shown) for the wafer W is formed on the side surface of the casing 110, and the gate valves 11 and 12 described above are provided at the loading / unloading port. Inside the casing 110, support pins 111 for supporting the wafer W are provided so that the wafer W can be temporarily accommodated.
　ケーシング１１０の側壁内部には、支持ピン１１１に支持されたウェハＷを温度調節する温度調節機構１１２が設けられている。温度調節機構１１２には、例えばペルチェ素子や水冷ジャケットなどの冷却部材（図示せず）が内蔵されている。温度調節機構１１２の冷却温度は、例えば後述する制御部２５０により制御される。 Inside the side wall of the casing 110, a temperature adjustment mechanism 112 for adjusting the temperature of the wafer W supported by the support pins 111 is provided. The temperature adjustment mechanism 112 includes a cooling member (not shown) such as a Peltier element or a water cooling jacket. The cooling temperature of the temperature adjustment mechanism 112 is controlled by, for example, the control unit 250 described later.
　ケーシング１１０の側面には、当該ケーシング１１０の内部に例えば窒素ガスなどの不活性ガスを供給するガス供給口１２０が形成されている。ガス供給口１２０には、ガス供給源１２１に連通するガス供給管１２２が接続されている。ガス供給管１２２には、不活性ガスの流れを制御するバルブや流量調節部等を含む供給機器群１２３が設けられている。また、ケーシング１１０の側面には、当該ケーシング１１０の内部の雰囲気を所定の真空度まで減圧するための吸気口１２４が形成されている。吸気口１２４は、例えば真空ポンプ１２５に連通する吸気管１２６が接続されている。したがって、上段ロードロック室１００は、その内部を不活性ガスの大気圧雰囲気又は減圧雰囲気に切り替え可能に構成されている。 A gas supply port 120 for supplying an inert gas such as nitrogen gas is formed inside the casing 110 on the side surface of the casing 110. A gas supply pipe 122 communicating with the gas supply source 121 is connected to the gas supply port 120. The gas supply pipe 122 is provided with a supply device group 123 including a valve for controlling the flow of the inert gas, a flow rate adjusting unit, and the like. In addition, an air inlet 124 for reducing the atmosphere inside the casing 110 to a predetermined degree of vacuum is formed on the side surface of the casing 110. For example, an intake pipe 126 communicating with the vacuum pump 125 is connected to the intake port 124. Accordingly, the upper load lock chamber 100 is configured so that the inside thereof can be switched to an atmospheric pressure atmosphere or a reduced pressure atmosphere of an inert gas.
　なお、下段ロードロック室１０１の構成は、上述した上段ロードロック室１００の構成と同様であるので説明を省略する。下段ロードロック室１０１のケーシング１１０の側面に形成されたウェハＷの搬入出口（図示せず）にも、上述したゲートバルブ１１、１２が別途設けられている。また、第２のロードロックユニット１３の構成は、第１のロードロックユニット１０の構成と同様であるので説明を省略する。 Note that the configuration of the lower load lock chamber 101 is the same as the configuration of the upper load lock chamber 100 described above, and a description thereof will be omitted. The above-described gate valves 11 and 12 are also separately provided at the loading / unloading port (not shown) of the wafer W formed on the side surface of the casing 110 of the lower load lock chamber 101. Further, the configuration of the second load lock unit 13 is the same as the configuration of the first load lock unit 10, and the description thereof is omitted.
　次に、前処理ステーション３の前処理液塗布ユニット３０の構成について説明する。前処理液塗布ユニット３０は、図３に示すように内部を密閉可能なケーシング１３０を有している。ケーシング１３０の側面にはウェハＷの搬入出口（図示せず）が形成され、当該搬入出口には上述したゲートバルブ３３が設けられている。 Next, the configuration of the pretreatment liquid application unit 30 of the pretreatment station 3 will be described. As shown in FIG. 3, the pretreatment liquid coating unit 30 has a casing 130 that can seal the inside. A loading / unloading port (not shown) for the wafer W is formed on a side surface of the casing 130, and the gate valve 33 described above is provided at the loading / unloading port.
　ケーシング１３０の天井面には、当該ケーシング１３０の内部に例えば窒素ガスなどの不活性ガスを供給するガス供給口１３１が形成されている。ガス供給口１３１には、ガス供給源１３２に連通するガス供給管１３３が接続されている。ガス供給管１３３には、不活性ガスの流れを制御するバルブや流量調節部等を含む供給機器群１３４が設けられている。 A gas supply port 131 for supplying an inert gas such as nitrogen gas is formed in the casing 130 on the ceiling surface of the casing 130. A gas supply pipe 133 communicating with the gas supply source 132 is connected to the gas supply port 131. The gas supply pipe 133 is provided with a supply device group 134 including a valve for controlling the flow of the inert gas, a flow rate adjusting unit, and the like.
　ケーシング１３０の内部には、ウェハＷを吸着保持するスピンチャック１４０が設けられている。スピンチャック１４０は、水平な上面を有し、当該上面には、例えばウェハＷを吸引する吸引口（図示せず）が設けられている。この吸引口からの吸引により、ウェハＷをスピンチャック１４０上に吸着保持できる。 Inside the casing 130, a spin chuck 140 for attracting and holding the wafer W is provided. The spin chuck 140 has a horizontal upper surface, and a suction port (not shown) for sucking the wafer W, for example, is provided on the upper surface. The wafer W can be sucked and held on the spin chuck 140 by suction from the suction port.
　スピンチャック１４０には、シャフト１４１を介して、ケーシング１３０の外部に設けられた駆動機構１４２が取り付けられている。駆動機構１４２は例えばモータなどを備え、この駆動機構１４２によりスピンチャック１４０は所定の速度に回転できる。また、駆動機構１４２にはシリンダなどの昇降駆動源が設けられており、スピンチャック１４０は昇降自在になっている。なお、シャフト１４１がケーシング１３０を挿通する部分には、ケーシング１３０の内部を密閉するために例えばＯリングやグリスが設けられている。 A drive mechanism 142 provided outside the casing 130 is attached to the spin chuck 140 via a shaft 141. The drive mechanism 142 includes a motor, for example, and the drive mechanism 142 can rotate the spin chuck 140 at a predetermined speed. The drive mechanism 142 is provided with a lift drive source such as a cylinder, and the spin chuck 140 can be lifted and lowered. In addition, in order to seal the inside of the casing 130, for example, an O-ring or grease is provided at a portion where the shaft 141 passes through the casing 130.
　スピンチャック１４０の下方側には断面形状が山形のガイドリング１５０が設けられており、このガイドリング１５０の外周縁は下方側に屈曲して延びている。前記スピンチャック１４０、スピンチャック１４０に保持されたウェハＷ及びガイドリング１５０を囲むようにカップ１５１が設けられている。カップ１５１は、ウェハＷから飛散又は落下する液体を受け止め、回収することができる。 A guide ring 150 having a mountain shape in cross section is provided on the lower side of the spin chuck 140, and the outer peripheral edge of the guide ring 150 is bent and extends downward. A cup 151 is provided so as to surround the spin chuck 140, the wafer W held by the spin chuck 140 and the guide ring 150. The cup 151 can receive and collect the liquid scattered or dropped from the wafer W.
　このカップ１５１は上面にスピンチャック１４０が昇降できるようにウェハＷよりも大きい開口部が形成されていると共に、側周面とガイドリング１５０の外周縁との間に排出路をなす隙間１５２が形成されている。前記カップ１５１の下方側は、ガイドリング１５０の外周縁部分と共に屈曲路を形成して気液分離部を構成している。カップ１５１の底部の内側領域には、カップ１５１内の雰囲気及びケーシング１３０内の雰囲気を所定の真空度まで減圧するための吸気口１５３が形成されている。吸気口１５３には、例えば真空ポンプ１５４に連通する吸気管１５５が接続されている。さらに前記カップ１５１の底部の外側領域には、回収した液体を排出する排液口１５６が形成されており、この排液口１５６には排液管１５７が接続されている。かかる構成により、前処理液塗布ユニット３０は、その内部を不活性ガスの大気圧雰囲気又は減圧雰囲気に切り替え可能に構成されている。 The cup 151 is formed with an opening larger than the wafer W on the upper surface so that the spin chuck 140 can be moved up and down, and a gap 152 is formed between the side peripheral surface and the outer peripheral edge of the guide ring 150. Has been. The lower side of the cup 151 forms a gas-liquid separation part by forming a curved path together with the outer peripheral edge portion of the guide ring 150. An intake port 153 for reducing the atmosphere in the cup 151 and the atmosphere in the casing 130 to a predetermined degree of vacuum is formed in the inner region of the bottom of the cup 151. For example, an intake pipe 155 that communicates with a vacuum pump 154 is connected to the intake port 153. Further, a drain port 156 for discharging the collected liquid is formed in the outer region of the bottom of the cup 151, and a drain tube 157 is connected to the drain port 156. With this configuration, the pretreatment liquid coating unit 30 is configured to be able to switch the inside to an atmospheric pressure atmosphere or a reduced pressure atmosphere of an inert gas.
　ケーシング１３０の内部であってスピンチャック１４０の上方には、ウェハＷ上に前処理液を吐出する前処理液ノズル１６０が配置されている。前処理液ノズル１６０には、前処理液供給源１６１に連通する供給管１６２が接続されている。前処理液供給源１６１内には、前処理液が貯留されている。供給管１６２には、前処理液の流れを制御するバルブや流量調節部等を含む供給機器群１６３が設けられている。なお、前処理液には、例えばウェハＷと金属膜との定着性を向上させるための液、例えば有機金属化合物を溶媒に溶解させた溶液が用いられる。本実施の形態においては、有機金属化合物として例えばチタンオキサイドが用いられる。また、溶媒としては、有機金属化合物を溶解させるものであれば限定されないが、例えばエーテル類や炭化水素類が用いられる。 Inside the casing 130 and above the spin chuck 140, a pretreatment liquid nozzle 160 that discharges the pretreatment liquid onto the wafer W is disposed. A supply pipe 162 communicating with the pretreatment liquid supply source 161 is connected to the pretreatment liquid nozzle 160. A pretreatment liquid is stored in the pretreatment liquid supply source 161. The supply pipe 162 is provided with a supply device group 163 including a valve for controlling the flow of the pretreatment liquid, a flow rate adjusting unit, and the like. As the pretreatment liquid, for example, a liquid for improving the fixing property between the wafer W and the metal film, for example, a solution in which an organometallic compound is dissolved in a solvent is used. In the present embodiment, for example, titanium oxide is used as the organometallic compound. Further, the solvent is not limited as long as it dissolves the organometallic compound. For example, ethers and hydrocarbons are used.
　前処理液ノズル１６０は、アーム１６４を介して移動機構（図示せず）に接続されている。前処理液ノズル１６０は、移動機構により、ケーシング１３０の長さ方向（Ｙ方向）に沿って、カップ１５１の一端側（図３の右側）の外側に設けられた待機領域１６５からカップ１５１の一端側に向かって移動できると共に、上下方向に移動できる。 The pretreatment liquid nozzle 160 is connected to a moving mechanism (not shown) via the arm 164. The pretreatment liquid nozzle 160 is moved from the standby region 165 provided on the outer side of one end side (right side in FIG. 3) of the cup 151 along the length direction (Y direction) of the casing 130 by the moving mechanism. It can move toward the side and move up and down.
　なお、主処理ステーション４の金属混合液塗布ユニット４０は、図４に示すように、上述した前処理液塗布ユニット３０の前処理液ノズル１６０に代えて、ウェハＷ上に金属錯体を吐出する金属錯体ノズル１７０と、その金属錯体を溶解させるための溶媒を吐出する溶媒ノズル１７１を配置した構成を有している。なお、金属錯体には、アルミニウム原子を有する錯体が用いられる。本実施の形態においては、例えばアミン化合物と水酸化アルミニウムの錯体が用いられる。また、金属錯体を溶解させる溶媒としては、金属錯体を溶解させるものであれば限定されないが、例えばエーテル類や炭化水素類が用いられる。 In addition, the metal liquid mixture coating unit 40 of the main processing station 4 replaces the pretreatment liquid nozzle 160 of the pretreatment liquid coating unit 30 described above with a metal that discharges a metal complex onto the wafer W as shown in FIG. A complex nozzle 170 and a solvent nozzle 171 for discharging a solvent for dissolving the metal complex are arranged. As the metal complex, a complex having an aluminum atom is used. In the present embodiment, for example, a complex of an amine compound and aluminum hydroxide is used. The solvent for dissolving the metal complex is not limited as long as it dissolves the metal complex. For example, ethers and hydrocarbons are used.
　金属錯体ノズル１７０には、金属錯体供給源１７２に連通する供給管１７３が接続されている。金属錯体供給源１７２内には、上述した金属錯体が貯留されている。供給管１７３には、金属錯体の流れを制御するバルブや流量調節部等を含む供給機器群１７４が設けられている。金属錯体ノズル１７０は、アーム１７５を介して移動機構（図示せず）に接続されている。金属錯体ノズル１７０は、移動機構により、ケーシング１３０の長さ方向（Ｙ方向）に沿って、カップ１５１の一端側（図４の右側）の外側に設けられた待機領域１７６からカップ１５１の一端側に向かって移動できると共に、上下方向に移動できる。 A supply pipe 173 communicating with the metal complex supply source 172 is connected to the metal complex nozzle 170. The metal complex supply source 172 stores the above-described metal complex. The supply pipe 173 is provided with a supply device group 174 including a valve for controlling the flow of the metal complex, a flow rate adjusting unit, and the like. The metal complex nozzle 170 is connected to a moving mechanism (not shown) via an arm 175. The metal complex nozzle 170 is moved from the standby region 176 provided on the outer side of one end side (right side in FIG. 4) of the cup 151 along the length direction (Y direction) of the casing 130 by the moving mechanism. And move up and down.
　溶媒ノズル１７１には、溶媒供給源１８０に連通する供給管１８１が接続されている。溶媒供給源１８０内には、上述した溶媒が貯留されている。供給管１８１には、溶媒の流れを制御するバルブや流量調節部等を含む供給機器群１８２が設けられている。溶媒ノズル１７１は、アーム１８３を介して移動機構（図示せず）に接続されている。溶媒ノズル１７１は、移動機構により、ケーシング１３０の長さ方向（Ｙ方向）に沿って、カップ１５１の一端側（図４の左側）の外側に設けられた待機領域１８４からカップ１５１の一端側に向かって移動できると共に、上下方向に移動できる。 A supply pipe 181 communicating with the solvent supply source 180 is connected to the solvent nozzle 171. The solvent supply source 180 stores the above-described solvent. The supply pipe 181 is provided with a supply device group 182 including a valve for controlling the flow of the solvent, a flow rate adjusting unit, and the like. The solvent nozzle 171 is connected to a moving mechanism (not shown) via the arm 183. The solvent nozzle 171 is moved from the standby region 184 provided on the outer side of one end side (left side in FIG. 4) of the cup 151 to the one end side of the cup 151 along the length direction (Y direction) of the casing 130 by the moving mechanism. It is possible to move up and down.
　金属錯体ノズル１７０と溶媒ノズル１７１は、図５に示すように金属錯体ノズル１７０から吐出される金属錯体の吐出流の中心線（図中の点線）と、溶媒ノズル１７１から吐出される溶媒の吐出流の中心線（図中の点線）とがウェハＷ上で交わるように配置される。すなわち、金属錯体ノズル１７０と溶媒ノズル１７１は、それらの軸方向が鉛直方向から所定の角度、傾斜して配置されている。このように金属錯体ノズル１７０と溶媒ノズル１７１を配置することにより、後述するとおり金属錯体ノズル１７０から吐出された金属錯体と溶媒ノズル１７１から吐出された溶媒がウェハＷに到達する前に混合されて、金属混合液が生成される。 As shown in FIG. 5, the metal complex nozzle 170 and the solvent nozzle 171 include a center line (dotted line in the figure) of the discharge flow of the metal complex discharged from the metal complex nozzle 170 and the discharge of the solvent discharged from the solvent nozzle 171. The flow center line (dotted line in the figure) is arranged so as to intersect on the wafer W. That is, the metal complex nozzle 170 and the solvent nozzle 171 are arranged such that their axial directions are inclined at a predetermined angle from the vertical direction. By arranging the metal complex nozzle 170 and the solvent nozzle 171 in this way, the metal complex discharged from the metal complex nozzle 170 and the solvent discharged from the solvent nozzle 171 are mixed before reaching the wafer W as will be described later. A metal mixture is produced.
　なお、以上の構成では、金属錯体ノズル１７０と溶媒ノズル１７１が別々のアーム１７５、１８３に支持されていたが、同じアームに支持され、そのアームの移動の制御により、金属錯体ノズル１７０と溶媒ノズル１７１の移動と供給タイミングを制御してもよい。 In the above configuration, the metal complex nozzle 170 and the solvent nozzle 171 are supported by separate arms 175 and 183. However, the metal complex nozzle 170 and the solvent nozzle 171 are supported by the same arm and controlled by movement of the arms. The movement of 171 and the supply timing may be controlled.
　金属混合液塗布ユニット４０のその他の構成は、上述した前処理液塗布ユニット３０の構成と同様であるので説明を省略する。 Other configurations of the metal mixed solution coating unit 40 are the same as the configuration of the pretreatment liquid coating unit 30 described above, and thus the description thereof is omitted.
　次に、前処理ステーション３の熱処理ユニット３１の構成について説明する。熱処理ユニット３１は、図６に示すように内部を密閉可能なケーシング１９０を有している。ケーシング１９０の側面にはウェハＷの搬入出口（図示せず）が形成され、当該搬入出口には上述したゲートバルブ３４が設けられている。 Next, the configuration of the heat treatment unit 31 of the pretreatment station 3 will be described. As shown in FIG. 6, the heat treatment unit 31 has a casing 190 that can be sealed. A loading / unloading port (not shown) for the wafer W is formed on the side surface of the casing 190, and the gate valve 34 described above is provided at the loading / unloading port.
　ケーシング１９０の天井面には、当該ケーシング１９０の内部に例えば窒素ガスなどの不活性ガスを供給するガス供給口１９１が形成されている。ガス供給口１９１には、ガス供給源１９２に連通するガス供給管１９３が接続されている。ガス供給管１９３には、不活性ガスの流れを制御するバルブや流量調節部等を含む供給機器群１９４が設けられている。 A gas supply port 191 for supplying an inert gas such as nitrogen gas is formed inside the casing 190 on the ceiling surface of the casing 190. A gas supply pipe 193 communicating with the gas supply source 192 is connected to the gas supply port 191. The gas supply pipe 193 is provided with a supply device group 194 including a valve for controlling the flow of the inert gas, a flow rate adjusting unit, and the like.
　ケーシング１９０の底面には、当該ケーシング１９０の内部の雰囲気を所定の真空度まで減圧するための吸気口１９５が形成されている。吸気口１９５には、例えば真空ポンプ１９６に連通する吸気管１９７が接続されている。かかる構成により、熱処理ユニット３１は、その内部を不活性ガスの大気圧雰囲気又は減圧雰囲気に切り替え可能に構成されている。 On the bottom surface of the casing 190, an air inlet 195 for reducing the atmosphere inside the casing 190 to a predetermined degree of vacuum is formed. For example, an intake pipe 197 communicating with a vacuum pump 196 is connected to the intake port 195. With this configuration, the heat treatment unit 31 is configured to be able to switch the inside to an atmospheric pressure atmosphere or a reduced pressure atmosphere of an inert gas.
　ケーシング１９０の内部には、ウェハＷを載置して熱処理する熱処理板２００が設けられている。熱処理板２００の外周部には、当該熱処理板２００を保持する保持部材２０１が設けられている。また、保持部材２０１の外周には、当該保持部材を支持する略円筒状のサポートリング２０２が設けられている。熱処理板２００の加熱温度は、例えば後述する制御部２５０により制御される。 Inside the casing 190, there is provided a heat treatment plate 200 on which the wafer W is placed and heat treated. A holding member 201 that holds the heat treatment plate 200 is provided on the outer periphery of the heat treatment plate 200. A substantially cylindrical support ring 202 that supports the holding member is provided on the outer periphery of the holding member 201. The heating temperature of the heat treatment plate 200 is controlled by, for example, a control unit 250 described later.
　サポートリング２０２の内部であって熱処理板２００の下方には、ウェハＷを下方から支持し昇降させるための昇降ピン２０３が設けられている。昇降ピン２０３は、熱板２００に形成された貫通孔２００ａを挿通するように設けられている。昇降ピン２０３には、ケーシング１９０の外部に設けられた支持部材２０４を介して、駆動機構２０５が取り付けられている。駆動機構２０５は例えばモータなどを備え、この駆動機構２０５により、昇降ピン２０３は昇降自在になっている。なお、昇降ピン２０３がケーシング１９０を挿通する部分には、ケーシング１９０の内部を密閉するために例えばＯリングやグリスが設けられている。 In the support ring 202 and below the heat treatment plate 200, lift pins 203 are provided for supporting and lifting the wafer W from below. The lift pins 203 are provided so as to be inserted through the through holes 200 a formed in the hot plate 200. A driving mechanism 205 is attached to the elevating pin 203 via a support member 204 provided outside the casing 190. The drive mechanism 205 includes, for example, a motor, and the lift pin 203 can be raised and lowered by the drive mechanism 205. In order to seal the inside of the casing 190, for example, an O-ring or grease is provided at a portion where the lifting pins 203 are inserted through the casing 190.
　なお、主処理ステーション４の前熱処理ユニット４１と後熱処理ユニット４２の構成は、上述した熱処理ユニット３１の構成と同様であるので説明を省略する。 Note that the configurations of the pre-heat treatment unit 41 and the post-heat treatment unit 42 of the main treatment station 4 are the same as those of the heat treatment unit 31 described above, and thus the description thereof is omitted.
　以上の金属膜形成システム１には、図１に示すように制御部２５０が設けられている。制御部２５０は、例えばコンピュータであり、プログラム格納部（図示せず）を有している。プログラム格納部には、金属膜形成システム１におけるウェハＷの金属膜形成処理を実行するプログラムが格納されている。なお、このプログラムは、例えばコンピュータ読み取り可能なハードディスク（ＨＤ）、フレキシブルディスク（ＦＤ）、コンパクトディスク（ＣＤ）、マグネットオプティカルデスク（ＭＯ）、メモリーカードなどのコンピュータに読み取り可能な記憶媒体Ｈに記録されていたものであって、その記憶媒体Ｈから制御部２５０にインストールされたものであってもよい。 In the metal film forming system 1 described above, a control unit 250 is provided as shown in FIG. The control unit 250 is a computer, for example, and has a program storage unit (not shown). The program storage unit stores a program for executing the metal film forming process of the wafer W in the metal film forming system 1. This program is recorded on a computer-readable storage medium H such as a computer-readable hard disk (HD), flexible disk (FD), compact disk (CD), magnetic optical desk (MO), or memory card. May have been installed in the control unit 250 from the storage medium H.
　本実施にかかる金属膜形成システム１は以上のように構成されている。次に、その金属膜形成システム１で行われる金属膜を形成する処理について説明する。図７は、かかる金属膜形成処理の主な工程を示すフローチャートであり。図８は、各工程におけるウェハＷの状態を示している。 The metal film forming system 1 according to the present embodiment is configured as described above. Next, the process which forms the metal film performed with the metal film formation system 1 is demonstrated. FIG. 7 is a flowchart showing main steps of the metal film forming process. FIG. 8 shows the state of the wafer W in each step.
　なお、金属膜形成処理中、前処理ステーション３の前処理液塗布ユニット３０、熱処理ユニット３１及び第１の搬送ユニット３２の内部と、主処理ステーション４の金属混合液塗布ユニット４０、前熱処理ユニット４１、後熱処理ユニット４２及び第２の搬送ユニット４３の内部は、それぞれ不活性ガスが充満されて大気圧に維持されている。 During the metal film forming process, the inside of the pretreatment liquid coating unit 30, the heat treatment unit 31 and the first transfer unit 32 in the pretreatment station 3, the metal mixed liquid coating unit 40 in the main treatment station 4, and the preheat treatment unit 41. The interiors of the post heat treatment unit 42 and the second transfer unit 43 are each filled with an inert gas and maintained at atmospheric pressure.
　先ず、ウェハ搬送体２２によって、搬入出ステーション２のカセット載置台２０上のカセットＣからウェハＷが取り出され、第１のロードロックユニット１０の上段ロードロック室１００に搬送される。その後、ゲートバルブ１１、１２を閉じた状態で真空ポンプ１２５を作動させ、上段ロードロック室１００の内部の雰囲気を所定の真空度、例えば１３．３Ｐａに減圧する。その後、不活性ガス供給源１２１から上段ロードロック室１００の内部に不活性ガスを供給し、内部を不活性ガスで充満させて大気圧に均圧する（図７の工程Ｓ１（本発明における第１の工程））。なお、上段ロードロック室１００の内部の雰囲気を減圧するのは、当該上段ロードロック室１００の内部の雰囲気を迅速に不活性ガス雰囲気にするためである。このため、雰囲気の減圧は厳格に真空雰囲気にすることまでは要求されず、上述の通り例えば１３．３Ｐａの真空度まで減圧すればよい。したがって、極めて短時間、例えば１０秒間で上段ロードロック室１００の内部の雰囲気を所定の真空度まで減圧することができる。 First, the wafer W is taken out from the cassette C on the cassette mounting table 20 of the loading / unloading station 2 by the wafer transfer body 22 and transferred to the upper load lock chamber 100 of the first load lock unit 10. Thereafter, the vacuum pump 125 is operated in a state where the gate valves 11 and 12 are closed, and the atmosphere inside the upper load lock chamber 100 is reduced to a predetermined degree of vacuum, for example, 13.3 Pa. Thereafter, an inert gas is supplied from the inert gas supply source 121 to the inside of the upper load lock chamber 100, and the inside is filled with the inert gas to equalize the atmospheric pressure (step S1 in FIG. 7 (first step in the present invention). Process)). The reason why the atmosphere inside the upper load lock chamber 100 is reduced is to quickly change the atmosphere inside the upper load lock chamber 100 to an inert gas atmosphere. For this reason, the pressure reduction of the atmosphere is not required until the vacuum atmosphere is strictly set, and the pressure may be reduced to, for example, a vacuum degree of 13.3 Pa as described above. Therefore, the atmosphere inside the upper load lock chamber 100 can be reduced to a predetermined degree of vacuum in a very short time, for example, 10 seconds.
　その後、ゲートバルブ１２、３３を順に開き、第１の搬送ユニット３２のウェハ搬送機構３５によって、ウェハＷが前処理液塗布ユニット３０に搬送される。前処理液塗布ユニット３０内に搬送されたウェハＷは、スピンチャック１４０に吸着保持される。このとき、ゲートバルブ３３が閉じられる。次に、スピンチャック１４０によってウェハＷを所定の位置まで下降させ、当該ウェハＷを所定の回転数で回転させる。そして、図８（ａ）に示すように回転中のウェハＷに対して、前処理液ノズル１６０から前処理液３００が吐出される。吐出された前処理液３００は遠心力によってウェハＷ上を拡散し、ウェハＷの表面全面に前処理液３００が塗布される（図７の工程Ｓ２（本発明における第２の工程））。このとき、前処理液３００は流動性を有するため、ウェハＷ上に所定のパターンが形成されていても、前処理液３００は当該パターンのトレンチ内に適切に流入する。なお、この前処理液の塗布処理中、前処理液塗布ユニット３０の内部には、ガス供給源１３２から不活性ガスが供給されると共に、真空ポンプ１５４によって内部の雰囲気が吸気される。そして、前処理液塗布ユニット３０の内部は、大気圧の不活性ガス雰囲気に維持されている。 Thereafter, the gate valves 12 and 33 are sequentially opened, and the wafer W is transferred to the pretreatment liquid coating unit 30 by the wafer transfer mechanism 35 of the first transfer unit 32. The wafer W transferred into the pretreatment liquid coating unit 30 is sucked and held by the spin chuck 140. At this time, the gate valve 33 is closed. Next, the wafer W is lowered to a predetermined position by the spin chuck 140, and the wafer W is rotated at a predetermined rotation number. Then, as shown in FIG. 8A, the pretreatment liquid 300 is discharged from the pretreatment liquid nozzle 160 onto the rotating wafer W. The discharged pretreatment liquid 300 is diffused on the wafer W by centrifugal force, and the pretreatment liquid 300 is applied to the entire surface of the wafer W (step S2 in FIG. 7 (second step in the present invention)). At this time, since the pretreatment liquid 300 has fluidity, even if a predetermined pattern is formed on the wafer W, the pretreatment liquid 300 appropriately flows into the trench of the pattern. During the pretreatment liquid application process, an inert gas is supplied from the gas supply source 132 to the inside of the pretreatment liquid application unit 30 and the internal atmosphere is sucked in by the vacuum pump 154. The inside of the pretreatment liquid application unit 30 is maintained in an inert gas atmosphere at atmospheric pressure.
　その後、ゲートバルブ３３、３４を順に開き、第１の搬送ユニット３２のウェハ搬送機構３５によって、ウェハＷが熱処理ユニット３１に搬送される。熱処理ユニット３１内に搬送されたウェハＷは、昇降ピン２０３に受け渡される。このとき、ゲートバルブ３４が閉じられる。次に、昇降ピン２０３を下降させ、ウェハＷを熱処理板２００上に載置する。そして、熱処理板２００上のウェハＷは例えば４００℃で５分間加熱され、図８（ｂ）に示すようにウェハＷ上に所定のパターンに沿った下地膜３１０が形成される（図７の工程Ｓ３（本発明における第２の工程））。なお、この熱処理中、熱処理ユニット３１の内部には、ガス供給源１９２から不活性ガスが供給されると共に、真空ポンプ１９６によって内部の雰囲気が吸気される。そして、熱処理ユニット３０の内部は、大気圧の不活性ガス雰囲気に維持されている。 Thereafter, the gate valves 33 and 34 are sequentially opened, and the wafer W is transferred to the heat treatment unit 31 by the wafer transfer mechanism 35 of the first transfer unit 32. The wafer W transferred into the heat treatment unit 31 is transferred to the lift pins 203. At this time, the gate valve 34 is closed. Next, the lift pins 203 are lowered and the wafer W is placed on the heat treatment plate 200. Then, the wafer W on the heat treatment plate 200 is heated, for example, at 400 ° C. for 5 minutes, and a base film 310 along a predetermined pattern is formed on the wafer W as shown in FIG. 8B (step of FIG. 7). S3 (second step in the present invention)). During this heat treatment, an inert gas is supplied from the gas supply source 192 to the inside of the heat treatment unit 31 and the internal atmosphere is sucked in by the vacuum pump 196. The interior of the heat treatment unit 30 is maintained in an inert gas atmosphere at atmospheric pressure.
　その後、ゲートバルブ３４、１４を順に開き、第１の搬送ユニット３２のウェハ搬送機構３５によって、ウェハＷが第２のロードロックユニット１３の上段ロードロック室１００に搬送される。その後、ゲートバルブ１４、１５を閉じた状態で真空ポンプ１２５を作動させ、上段ロードロック室１００の内部の雰囲気を所定の真空度、例えば１３．３Ｐａに減圧する。その後、不活性ガス供給源１２１から上段ロードロック室１００の内部に不活性ガスを供給し、内部を不活性ガスで充満させて大気圧に均圧する。また、このとき、温度調節機構１１２によって、ウェハＷを例えば常温まで冷却する（図７の工程Ｓ４（本発明における第３の工程））。 Thereafter, the gate valves 34 and 14 are opened in order, and the wafer W is transferred to the upper load lock chamber 100 of the second load lock unit 13 by the wafer transfer mechanism 35 of the first transfer unit 32. Thereafter, the vacuum pump 125 is operated with the gate valves 14 and 15 closed, and the atmosphere inside the upper load lock chamber 100 is reduced to a predetermined degree of vacuum, for example, 13.3 Pa. Thereafter, an inert gas is supplied from the inert gas supply source 121 to the inside of the upper load lock chamber 100, and the inside is filled with the inert gas to equalize the atmospheric pressure. At this time, the wafer W is cooled to, for example, room temperature by the temperature adjustment mechanism 112 (step S4 in FIG. 7 (third step in the present invention)).
　その後、ゲートバルブ１５、４４を順に開き、第２の搬送ユニット４３のウェハ搬送機構４７によって、ウェハＷが金属混合液塗布ユニット４０に搬送される。金属混合液塗布ユニット４０内に搬送されたウェハＷは、スピンチャック１４０に吸着保持される。このとき、ゲートバルブ４４が閉じられる。次に、スピンチャック１４０によってウェハＷを所定の位置まで下降させ、当該ウェハＷを所定の回転数で回転させる。そして、図８（ｃ）に示すように回転中のウェハＷに対して、金属錯体ノズル１７０から金属錯体３２０が吐出されると共に、溶媒ノズル１７１から溶媒３２１が吐出される。これら金属錯体３２０と溶媒３２１は、ウェハＷに到達する前に混合され、金属混合液３２２が生成される。ここで、金属混合液３２２は、金属であるアルミニウムが析出し易いため、一旦混合された後少なくとも９０秒以内にウェハＷ上に塗布する必要がある。本実施の形態では、ウェハＷに供給される直前に金属混合液３２２が生成されるので、適切な金属混合液３２２をウェハＷ上に供給することができる。そして、供給された金属混合液３２２は遠心力によってウェハＷ上を拡散し、ウェハＷの表面全面に金属混合液３２２が塗布される（図７の工程Ｓ５（本発明における第４の工程））。このとき、金属混合液３２２は流動性を有するため、ウェハＷ上に所定のパターンが形成されていても、金属混合液３２２は当該パターンのトレンチ内に適切に流入する。なお、この金属混合液の塗布処理中、金属混合液塗布ユニット４０の内部には、ガス供給源１３２から不活性ガスが供給されると共に、真空ポンプ１５４によって内部の雰囲気が吸気される。そして、金属混合液塗布ユニット４０の内部は、大気圧の不活性ガス雰囲気に維持されている。 Thereafter, the gate valves 15 and 44 are sequentially opened, and the wafer W is transferred to the metal mixed solution coating unit 40 by the wafer transfer mechanism 47 of the second transfer unit 43. The wafer W transported into the metal mixed solution coating unit 40 is sucked and held by the spin chuck 140. At this time, the gate valve 44 is closed. Next, the wafer W is lowered to a predetermined position by the spin chuck 140, and the wafer W is rotated at a predetermined rotation number. Then, as illustrated in FIG. 8C, the metal complex 320 is discharged from the metal complex nozzle 170 and the solvent 321 is discharged from the solvent nozzle 171 to the rotating wafer W. The metal complex 320 and the solvent 321 are mixed before reaching the wafer W, and a metal mixed solution 322 is generated. Here, the metal mixed liquid 322 needs to be coated on the wafer W within at least 90 seconds after being mixed once because aluminum which is a metal is easily deposited. In the present embodiment, since the metal mixed liquid 322 is generated immediately before being supplied to the wafer W, an appropriate metal mixed liquid 322 can be supplied onto the wafer W. The supplied metal mixture 322 is diffused on the wafer W by centrifugal force, and the metal mixture 322 is applied to the entire surface of the wafer W (step S5 in FIG. 7 (fourth step in the present invention)). . At this time, since the metal mixed solution 322 has fluidity, even if a predetermined pattern is formed on the wafer W, the metal mixed solution 322 appropriately flows into the trench of the pattern. During the metal mixture application process, an inert gas is supplied from the gas supply source 132 into the metal mixture application unit 40, and the internal atmosphere is sucked in by the vacuum pump 154. And the inside of the metal liquid mixture application unit 40 is maintained in an inert gas atmosphere at atmospheric pressure.
　その後、ゲートバルブ４４、４５を順に開き、第２の搬送ユニット４３のウェハ搬送機構４７によって、ウェハＷが前熱処理ユニット４１に搬送される。前熱処理ユニット４１内に搬送されたウェハＷは、昇降ピン２０３に受け渡される。このとき、ゲートバルブ４５が閉じられる。次に、昇降ピン２０３を下降させ、ウェハＷを熱処理板２００上に載置する。そして、熱処理板２００上のウェハＷは、第１の温度である、例えば１５０℃で５分間加熱される（図７の工程Ｓ６（本発明における第４の工程））。そうすると、金属混合液３２２中の有機成分が揮発し、ウェハＷ上にコロイド状のアルミニウムが析出する。なお、この熱処理中、前熱処理ユニット４１の内部には、ガス供給源１９２から不活性ガスが供給されると共に、真空ポンプ１９６によって内部の雰囲気が吸気される。そして、前熱処理ユニット４１の内部は、大気圧の不活性ガス雰囲気に維持されている。 Thereafter, the gate valves 44 and 45 are sequentially opened, and the wafer W is transferred to the pre-heat treatment unit 41 by the wafer transfer mechanism 47 of the second transfer unit 43. The wafer W transferred into the pre-heat treatment unit 41 is transferred to the lift pins 203. At this time, the gate valve 45 is closed. Next, the lift pins 203 are lowered and the wafer W is placed on the heat treatment plate 200. Then, the wafer W on the heat treatment plate 200 is heated at a first temperature, for example, 150 ° C. for 5 minutes (step S6 in FIG. 7 (fourth step in the present invention)). Then, the organic component in the metal mixed solution 322 is volatilized and colloidal aluminum is deposited on the wafer W. During this heat treatment, an inert gas is supplied from the gas supply source 192 to the inside of the pre-heat treatment unit 41 and the internal atmosphere is sucked by the vacuum pump 196. The interior of the pre-heat treatment unit 41 is maintained in an inert gas atmosphere at atmospheric pressure.
　その後、ゲートバルブ４５、４６を順に開き、第２の搬送ユニット４３のウェハ搬送機構４７によって、ウェハＷが後熱処理ユニット４２に搬送される。後熱処理ユニット４２内に搬送されたウェハＷは、昇降ピン２０３に受け渡される。このとき、ゲートバルブ４６が閉じられる。次に、昇降ピン２０３を下降させ、ウェハＷを熱処理板２００上に載置する。そして、熱処理板２００上のウェハＷは、第１の温度よりも高い第２の温度である、例えば４００℃で５分間加熱される（図７の工程Ｓ７（本発明における第４の工程））。そうすると、図８（ｄ）に示すようにコロイド状のアルミニウムが金属化し、ウェハＷ上にアルミニウム膜の金属膜３３０が形成される。このとき、ウェハＷ上に下地膜３１０が形成されているため、ウェハＷと金属混合液３２２との定着性が向上し、金属混合液３２２が所定のパターンに沿って適切に形成される。なお、この熱処理中、後熱処理ユニット４２の内部には、ガス供給源１９２から不活性ガスが供給されると共に、真空ポンプ１９６によって内部の雰囲気が吸気される。そして、後熱処理ユニット４２の内部は、大気圧の不活性ガス雰囲気に維持されている。 Thereafter, the gate valves 45 and 46 are sequentially opened, and the wafer W is transferred to the post heat treatment unit 42 by the wafer transfer mechanism 47 of the second transfer unit 43. The wafer W transferred into the post heat treatment unit 42 is delivered to the lift pins 203. At this time, the gate valve 46 is closed. Next, the lift pins 203 are lowered and the wafer W is placed on the heat treatment plate 200. Then, the wafer W on the heat treatment plate 200 is heated at a second temperature higher than the first temperature, for example, 400 ° C. for 5 minutes (step S7 in FIG. 7 (fourth step in the present invention)). . Then, colloidal aluminum is metallized as shown in FIG. 8D, and a metal film 330 of an aluminum film is formed on the wafer W. At this time, since the base film 310 is formed on the wafer W, the fixing property between the wafer W and the metal mixed solution 322 is improved, and the metal mixed solution 322 is appropriately formed along a predetermined pattern. During this heat treatment, an inert gas is supplied from the gas supply source 192 to the inside of the post heat treatment unit 42 and the internal atmosphere is sucked in by the vacuum pump 196. The interior of the post heat treatment unit 42 is maintained in an inert gas atmosphere at atmospheric pressure.
　その後、ゲートバルブ４６、１５を順に開き、第２の搬送ユニット４３のウェハ搬送機構４７によって、ウェハＷが第２のロードロックユニット１３の下段ロードロック室１０１に搬送される。その後、ゲートバルブ１４、１５を閉じた状態で真空ポンプ１２５を作動させ、下段ロードロック室１０１の内部の雰囲気を所定の真空度、例えば１３．３Ｐａに減圧する。その後、不活性ガス供給源１２１から下段ロードロック室１０１の内部に不活性ガスを供給し、内部を不活性ガスで充満させて大気圧に均圧する。また、このとき、温度調節機構１１２によって、ウェハＷを所定の温度まで冷却する（図７の工程Ｓ８（本発明における第５の工程））。 Thereafter, the gate valves 46 and 15 are sequentially opened, and the wafer W is transferred to the lower load lock chamber 101 of the second load lock unit 13 by the wafer transfer mechanism 47 of the second transfer unit 43. Thereafter, the vacuum pump 125 is operated with the gate valves 14 and 15 closed, and the atmosphere inside the lower load lock chamber 101 is reduced to a predetermined degree of vacuum, for example, 13.3 Pa. Thereafter, an inert gas is supplied from the inert gas supply source 121 to the inside of the lower load lock chamber 101, and the inside is filled with the inert gas to equalize the atmospheric pressure. At this time, the wafer W is cooled to a predetermined temperature by the temperature adjustment mechanism 112 (step S8 in FIG. 7 (fifth step in the present invention)).
　その後、ゲートバルブ１４、１２を順に開き、第１の搬送ユニット３２のウェハ搬送機構３５によって、ウェハＷが第１のロードロックユニット１０の下段ロードロック室１０１に搬送される。下段ロードロック室１０１では、温度調節機構１１２によって、ウェハＷを例えば常温まで冷却する。その後、ウェハ搬送体２２によって、搬入出ステーション２のカセット載置台２０上のカセットＣにウェハＷが搬送される（図７の工程Ｓ９（本発明における第６の工程））。こうして、金属膜形成システム１における一連の金属膜形成処理が終了する。 Thereafter, the gate valves 14 and 12 are sequentially opened, and the wafer W is transferred to the lower load lock chamber 101 of the first load lock unit 10 by the wafer transfer mechanism 35 of the first transfer unit 32. In the lower load lock chamber 101, the temperature adjustment mechanism 112 cools the wafer W to, for example, room temperature. After that, the wafer W is transferred by the wafer transfer body 22 to the cassette C on the cassette mounting table 20 of the loading / unloading station 2 (step S9 in FIG. 7 (sixth step in the present invention)). Thus, a series of metal film forming processes in the metal film forming system 1 is completed.
　以上の実施の形態の金属膜形成システム１には、前処理ステーション３と主処理ステーション４との間に第２のロードロックユニット１３が設けられているので、前処理ステーション３の内部の雰囲気と主処理ステーション４の内部の雰囲気とを隔離することができる。また、主処理ステーション４は、その内部の処理雰囲気を不活性ガスの大気圧雰囲気にすることができる。したがって、各処理の雰囲気を厳格に制御することができ、ウェハＷ上に金属膜３３０を適切に形成することができる。 Since the second load lock unit 13 is provided between the preprocessing station 3 and the main processing station 4 in the metal film forming system 1 of the above embodiment, the atmosphere inside the preprocessing station 3 The atmosphere inside the main processing station 4 can be isolated. Further, the main processing station 4 can make the processing atmosphere inside it an atmospheric pressure atmosphere of an inert gas. Therefore, the atmosphere of each process can be strictly controlled, and the metal film 330 can be appropriately formed on the wafer W.
　また、前処理ステーション３も、その内部の処理雰囲気を不活性ガスの大気圧雰囲気にすることができるため、ウェハＷ上に下地膜３１０を適切に形成することができる。これにより、ウェハＷ上に金属膜３３０をより適切に形成することができる。 In addition, since the pre-treatment station 3 can also set the inside treatment atmosphere to an atmospheric pressure atmosphere of an inert gas, the base film 310 can be appropriately formed on the wafer W. Thereby, the metal film 330 can be more appropriately formed on the wafer W.
　また、搬入出ステーション２と前処理ステーション３との間に第１のロードロックユニット１０が設けられており、金属膜形成システム１は、第１のロードロックユニット１０と第２のロードロックユニット１３を介して、搬入出ステーション２、前処理ステーション３及び主処理ステーション４が一体に接続された構成を有している。このため、当該金属膜形成システム１において、ウェハＷ上に下地膜３１０と金属膜３３０を連続的に形成することができ、しかも複数のウェハＷを連続して処理することができる。したがって、ウェハＷ上に金属膜３３０を効率よく形成することができる。 A first load lock unit 10 is provided between the carry-in / out station 2 and the pretreatment station 3, and the metal film forming system 1 includes the first load lock unit 10 and the second load lock unit 13. The carry-in / out station 2, the pre-processing station 3, and the main processing station 4 are connected together via the. Therefore, in the metal film forming system 1, the base film 310 and the metal film 330 can be continuously formed on the wafer W, and a plurality of wafers W can be processed continuously. Therefore, the metal film 330 can be efficiently formed on the wafer W.
　また、前処理ステーション３において、前処理液塗布ユニット３０と熱処理ユニット３１は、第１の搬送ユニット３２を挟んで近接して設けられているので、ウェハＷ上に下地膜３１０を効率よく形成することができる。また、主処理ステーション４においても、金属混合液塗布ユニット４０、前熱処理ユニット４１及び後熱処理ユニット４２は、第２の搬送ユニット４３を挟んで近接して設けられているので、ウェハＷ上に金属膜３３０を効率よく形成することができる。 In the pretreatment station 3, the pretreatment liquid coating unit 30 and the heat treatment unit 31 are provided close to each other with the first transfer unit 32 interposed therebetween, so that the base film 310 is efficiently formed on the wafer W. be able to. Also in the main processing station 4, the metal liquid mixture application unit 40, the pre-heat treatment unit 41 and the post-heat treatment unit 42 are provided close to each other with the second transfer unit 43 interposed therebetween. The film 330 can be formed efficiently.
　また、主処理ステーション４において、ウェハＷ上に金属混合液３２２を塗布した後、前熱処理ユニット４１と後熱処理ユニット４２において２段階でウェハＷを熱処理している。かかる場合、１つの熱処理ユニットでウェハＷを所定の温度まで熱処理する場合に比べて、各熱処理ユニット４１、４２でのウェハＷの熱処理の時間を短縮できる。したがって、複数のウェハＷを連続して効率よく熱処理することができる。 In the main processing station 4, after the metal mixed solution 322 is applied onto the wafer W, the pre-heat treatment unit 41 and the post-heat treatment unit 42 heat-treat the wafer W in two stages. In this case, it is possible to shorten the time for the heat treatment of the wafer W in each of the heat treatment units 41 and 42 as compared with the case where the wafer W is heat-treated to a predetermined temperature with one heat treatment unit. Therefore, a plurality of wafers W can be heat-treated continuously and efficiently.
　さらに、前処理ステーション３と主処理ステーション４は、それぞれ内部を不活性ガスの大気圧雰囲気又は減圧雰囲気に切り替え可能に構成されているので、例えばメンテナンス時に前処理ステーション３と主処理ステーション４の内部を大気に開放した場合でも、メンテナンス終了後、前処理ステーション３と主処理ステーション４内の雰囲気を一旦真空引きして減圧することで、迅速に不活性ガスの大気圧雰囲気にすることができる。したがって、メンテナンス後、直ぐに金属膜形成システム１を立ち上げてウェハＷを処理することができる。 Furthermore, since the pretreatment station 3 and the main treatment station 4 are configured to be able to switch the interior to an atmospheric pressure atmosphere or a reduced pressure atmosphere of an inert gas, for example, the inside of the pretreatment station 3 and the main treatment station 4 during maintenance. Even when the atmosphere is opened to the atmosphere, after the maintenance is completed, the atmosphere in the pretreatment station 3 and the main treatment station 4 is once evacuated to reduce the pressure, whereby the atmospheric pressure of the inert gas can be quickly changed. Therefore, immediately after the maintenance, the metal film forming system 1 can be started up and the wafer W can be processed.
　また、第１のロードロックユニット１０と第２のロードロックユニット１３は、それぞれウェハＷを所定の温度に調節する温度調節機構１１２を有しているので、当該第１のロードロックユニット１０と第２のロードロックユニット１３においてウェハＷを一時的に収容している間に、当該ウェハＷを温度調節することができる。これにより、ウェハＷをより効率よく処理することができる。 Further, each of the first load lock unit 10 and the second load lock unit 13 includes a temperature adjustment mechanism 112 that adjusts the wafer W to a predetermined temperature. While the wafer W is temporarily accommodated in the two load lock units 13, the temperature of the wafer W can be adjusted. Thereby, the wafer W can be processed more efficiently.
　また、第１のロードロックユニット１０と第２のロードロックユニット１３には、それぞれ上下２段にロードロック室１００、１０１が配置されているので、２枚のウェハＷを同時に収容して処理することができる。したがって、ウェハＷをより効率よく処理することができる。 In addition, since the first load lock unit 10 and the second load lock unit 13 are respectively provided with load lock chambers 100 and 101 in two upper and lower stages, two wafers W are simultaneously accommodated and processed. be able to. Therefore, the wafer W can be processed more efficiently.
　以上の実施の形態では、金属錯体３２０はアルミニウム原子を有していたが、他の金属原子、例えば銅原子や金原子、銀原子などを有していてもよい。また、前処理液についても、チタンオキサイドに限定されず、他のパラジウム酸化物やアルミニウム酸化物を用いてもよい。さらに、前処理液の種類によっては、上述の前処理ステーション３内の雰囲気を窒素ガス雰囲気にせず、大気に開放してもよい。かかる場合、上述の第１のロードロックユニット１０を省略することができる。 In the above embodiment, the metal complex 320 has an aluminum atom, but may have another metal atom, such as a copper atom, a gold atom, or a silver atom. Further, the pretreatment liquid is not limited to titanium oxide, and other palladium oxide or aluminum oxide may be used. Furthermore, depending on the type of pretreatment liquid, the atmosphere in the pretreatment station 3 described above may be opened to the atmosphere instead of the nitrogen gas atmosphere. In such a case, the first load lock unit 10 described above can be omitted.
　また、以上の実施の形態の第１のロードロックユニット１０と第２のロードロックユニット１３には、それぞれ上下２段のロードロック室１００、１０１が設けられていたが、ロードロック室の数はこれに限定されない。例えば上下３段以上のロードロック室を設けてもよい。 Further, the first load lock unit 10 and the second load lock unit 13 of the above embodiment are provided with two upper and lower load lock chambers 100 and 101, respectively. It is not limited to this. For example, a load lock chamber having three or more upper and lower stages may be provided.
　さらに、以上の実施の形態の第１のロードロックユニット１０と第２のロードロックユニット１３には、それぞれ上下２段のロードロック室１００、１０１が設けられていたが、これら２室のロードロック室は水平方向に配置されていてもよい。かかる場合、図９に示すように第１のロードロックユニット１０には、２室のロードロック室３５０、３５１が水平方向（図９のＸ方向）に並べて配置されている。そして、Ｘ方向正方向側に配置されたロードロック室３５０は、上述の上段ロードロック室１００に相当し、当該上段ロードロック室１００と同様の構成を有している。また、Ｘ方向負方向側に配置されたロードロック室３５１は、上述の下段ロードロック室１０１に相当し、当該下段ロードロック室１０１と同様の構成を有している。なお、これらロードロック室３５０、３５１は、その両端部に上述のゲートバルブ１１、１２がそれぞれ設けられ、搬入出ステーション２と前処理ステーション３に接続されている。そして、搬入出ステーション２から前処理ステーション３へウェハＷを搬送する際に行われる上述の工程Ｓ１は、ロードロック室３５０において行われる。また、前処理ステーション３から搬入出ステーション２へウェハＷを搬送する際に行われる上述の工程Ｓ９は、ロードロック室３５１において行われる。 Further, the first load lock unit 10 and the second load lock unit 13 of the above embodiment are provided with load lock chambers 100 and 101 in two upper and lower stages, respectively. The chambers may be arranged in the horizontal direction. In this case, as shown in FIG. 9, in the first load lock unit 10, two load lock chambers 350 and 351 are arranged side by side in the horizontal direction (X direction in FIG. 9). The load lock chamber 350 disposed on the positive side in the X direction corresponds to the upper load lock chamber 100 described above, and has the same configuration as the upper load lock chamber 100. The load lock chamber 351 arranged on the negative side in the X direction corresponds to the lower load lock chamber 101 described above, and has the same configuration as the lower load lock chamber 101. The load lock chambers 350 and 351 are provided with the above-described gate valves 11 and 12 at both ends thereof, and are connected to the carry-in / out station 2 and the pretreatment station 3. Then, the above-described step S <b> 1 that is performed when the wafer W is transferred from the loading / unloading station 2 to the preprocessing station 3 is performed in the load lock chamber 350. Further, the above-described step S9 performed when the wafer W is transferred from the preprocessing station 3 to the carry-in / out station 2 is performed in the load lock chamber 351.
　第２のロードロックユニット１３も、第１のロードロックユニット１０と同様に、２室のロードロック室３６０、３６１が水平方向に配置されている。これらロードロック室３６０、３６１は、Ｘ方向に並べて配置されている。そして、Ｘ方向正方向側に配置されたロードロック室３６０は、上述の上段ロードロック室１００に相当し、当該上段ロードロック室１００と同様の構成を有している。また、Ｘ方向負方向側に配置されたロードロック室３６１は、上述の下段ロードロック室１０１に相当し、当該下段ロードロック室１０１と同様の構成を有している。なお、これらロードロック室３６０、３６１は、その両端部に上述のゲートバルブ１４、１５がそれぞれ設けられ、前処理ステーション３と主処理ステーション４に接続されている。そして、前処理ステーション３から主処理ステーション４へウェハＷを搬送する際に行われる上述の工程Ｓ４は、ロードロック室３６０において行われる。また、主処理ステーション４から前処理ステーション３へウェハＷを搬送する際に行われる上述の工程Ｓ８は、ロードロック室３６１において行われる。 As with the first load lock unit 10, the second load lock unit 13 also has two load lock chambers 360 and 361 arranged in the horizontal direction. These load lock chambers 360 and 361 are arranged side by side in the X direction. The load lock chamber 360 arranged on the positive side in the X direction corresponds to the upper load lock chamber 100 described above, and has the same configuration as the upper load lock chamber 100. Further, the load lock chamber 361 arranged on the X direction negative direction side corresponds to the above-described lower load lock chamber 101 and has the same configuration as the lower load lock chamber 101. The load lock chambers 360 and 361 are provided with the above-described gate valves 14 and 15 at both ends thereof, and are connected to the preprocessing station 3 and the main processing station 4. The above-described step S4 performed when the wafer W is transferred from the preprocessing station 3 to the main processing station 4 is performed in the load lock chamber 360. Further, the above-described step S8 performed when the wafer W is transferred from the main processing station 4 to the preprocessing station 3 is performed in the load lock chamber 361.
　なお、第２のロードロックユニット１３のロードロック室３６０、３６１間には、予備の熱処理ユニット３６２が設けられていてもよい。熱処理ユニット３６２は、ゲートバルブ３６３を介して前処理ステーション３の第１の搬送ユニット３２に接続されると共に、ゲートバルブ３６４を介して主処理ステーション４の第２の搬送ユニット４３に接続されている。熱処理ユニット３６２は、その内部に温度調節機構（図示せず）が設けられ、且つその内部を不活性ガスの大気圧雰囲気又は減圧雰囲気に切り替え可能に構成されている。そして、熱処理ユニット３６２は、ウェハＷを所定の温度に温度調節することができ、例えばロードロック室３６０、３６１のメンテナンス時などに使用される。 Note that a spare heat treatment unit 362 may be provided between the load lock chambers 360 and 361 of the second load lock unit 13. The heat treatment unit 362 is connected to the first transfer unit 32 of the pretreatment station 3 via the gate valve 363 and is connected to the second transfer unit 43 of the main processing station 4 via the gate valve 364. . The heat treatment unit 362 is provided with a temperature adjustment mechanism (not shown) therein, and is configured to be able to switch the inside to an atmospheric pressure atmosphere or a reduced pressure atmosphere of an inert gas. The heat treatment unit 362 can adjust the temperature of the wafer W to a predetermined temperature, and is used for maintenance of the load lock chambers 360 and 361, for example.
　また、主処理ステーション４には、予備の熱処理ユニット３７０が設けられていてもよい。熱処理ユニット３７０は、ゲートバルブ３７１を介して第２の搬送ユニット４３に接続されている。熱処理ユニット３７０は、その内部に熱処理板（図示せず）や温度調節機構（図示せず）が設けられ、且つその内部を不活性ガスの大気圧雰囲気又は減圧雰囲気に切り替え可能に構成されている。そして、熱処理ユニット３７０は、ウェハＷを所定の温度に熱処理することができ、例えば前熱処理ユニット４１や後熱処理ユニット４２のメンテナンス時などに使用される。 In addition, the main processing station 4 may be provided with a spare heat treatment unit 370. The heat treatment unit 370 is connected to the second transfer unit 43 via the gate valve 371. The heat treatment unit 370 is provided with a heat treatment plate (not shown) and a temperature adjustment mechanism (not shown) inside, and is configured to be able to switch the inside to an atmospheric pressure atmosphere or a reduced pressure atmosphere of an inert gas. . The heat treatment unit 370 can heat the wafer W to a predetermined temperature, and is used for maintenance of the pre-heat treatment unit 41 and the post-heat treatment unit 42, for example.
　なお、金属膜形成システム１のその他の構成は、前記実施の形態における金属膜形成システム１の構成と同様であるので説明を省略する。本実施の形態においても、前記実施の形態と同様の効果を享受することができる。また、第１のロードロックユニット１０にはロードロック室３５０、３５１が水平方向に配置されているので、第１の搬送ユニット３２のウェハ搬送機構３５の鉛直方向への移動を省略することが可能となる。同様に、第２のロードロックユニット１３にも、ロードロック室３６０、３６１が水平方向に配置されているので、第２の搬送ユニット４３のウェハ搬送機構４７の鉛直方向への移動を省略することが可能となる。したがって、第１の搬送ユニット３２と第２の搬送ユニット４３の装置構成を簡略化することができる。 In addition, since the other structure of the metal film formation system 1 is the same as that of the metal film formation system 1 in the said embodiment, description is abbreviate | omitted. Also in this embodiment, the same effect as that of the above embodiment can be enjoyed. Further, since the load lock chambers 350 and 351 are arranged in the horizontal direction in the first load lock unit 10, it is possible to omit the movement of the wafer transfer mechanism 35 of the first transfer unit 32 in the vertical direction. It becomes. Similarly, since the load lock chambers 360 and 361 are also arranged in the horizontal direction in the second load lock unit 13, the movement of the wafer transfer mechanism 47 of the second transfer unit 43 in the vertical direction is omitted. Is possible. Therefore, the apparatus configuration of the first transport unit 32 and the second transport unit 43 can be simplified.
　また、以上の実施の形態の前処理液塗布ユニット３０と金属混合液塗布ユニット４０は、ウェハＷの裏面を洗浄するバックリンスノズルを備えていてもよく、またカップ１５１を洗浄するカップリンスノズルを備えていてもよい。 In addition, the pretreatment liquid coating unit 30 and the metal mixed liquid coating unit 40 of the above embodiment may include a back rinse nozzle that cleans the back surface of the wafer W, and a cup rinse nozzle that cleans the cup 151. You may have.
　また、以上の実施の形態では、基板としてウェハＷを用いた場合について説明したが、本発明は、基板がウェハ以外のＦＰＤ（フラットパネルディスプレイ）、フォトマスク用のマスクレチクルなどの他の基板である場合にも適用できる。さらに、本発明は、例えば有機太陽電池の製造プロセスや低酸素雰囲気下での成膜プロセスにも適用することができる。 In the above embodiment, the case where the wafer W is used as the substrate has been described. However, the present invention is not limited to the wafer but may be another substrate such as an FPD (flat panel display) other than the wafer or a mask reticle for a photomask. It can also be applied in some cases. Furthermore, the present invention can be applied to, for example, a manufacturing process of an organic solar cell and a film forming process in a low oxygen atmosphere.
　以上、添付図面を参照しながら本発明の好適な実施の形態について説明したが、本発明はかかる例に限定されない。当業者であれば、特許請求の範囲に記載された思想の範疇内において、各種の変更例または修正例に想到し得ることは明らかであり、それらについても当然に本発明の技術的範囲に属するものと了解される。本発明はこの例に限らず種々の態様を採りうるものである。 The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to such examples. It is obvious for those skilled in the art that various modifications or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood. The present invention is not limited to this example and can take various forms.
　　１　　金属膜形成システム
　　２　　搬入出ステーション
　　３　　前処理ステーション
　　４　　主処理ステーション
　　１０　第１のロードロックユニット
　　１３　第２のロードロックユニット
　　３０　前処理液塗布ユニット
　　３１　熱処理ユニット
　　３２　第１の搬送ユニット
　　３５　ウェハ搬送機構
　　４０　金属混合液塗布ユニット
　　４１　前熱処理ユニット
　　４２　後熱処理ユニット
　　４３　第２の搬送ユニット
　　４７　ウェハ搬送機構
　　１００　上段ロードロック室
　　１０１　下段ロードロック室
　　１１２　温度調節機構
　　１２１　ガス供給源
　　１２５　真空ポンプ
　　１３２　ガス供給源
　　１５４　真空ポンプ
　　１６０　前処理液ノズル
　　１７０　金属錯体ノズル
　　１７１　溶媒ノズル
　　１９２　ガス供給源
　　１９６　真空ポンプ
　　２００　熱処理板
　　２５０　制御部
　　３００　前処理液
　　３１０　下地膜
　　３２０　金属錯体
　　３２１　溶媒
　　３２２　金属混合液
　　３３０　金属膜
　　３５０、３５１、３６０、３６１　ロードロック室
　　Ｗ　　ウェハ DESCRIPTION OF SYMBOLS 1 Metal film formation system 2 Loading / unloading station 3 Pre-processing station 4 Main processing station 10 1st load lock unit 13 2nd load lock unit 30 Pre-processing liquid application unit 31 Heat processing unit 32 1st transfer unit 35 Wafer transfer mechanism 40 Metal Mixed Liquid Application Unit 41 Pre-heat treatment unit 42 Post-heat treatment unit 43 Second transfer unit 47 Wafer transfer mechanism 100 Upper load lock chamber 101 Lower load lock chamber 112 Temperature control mechanism 121 Gas supply source 125 Vacuum pump 132 Gas supply source 154 Vacuum pump 160 Pretreatment liquid nozzle 170 Metal complex nozzle 171 Solvent nozzle 192 Gas supply source 196 Vacuum pump 200 Heat treatment plate 250 Controller 300 Pretreatment liquid 310 Underlayer film 32 0 Metal Complex 321 Solvent 322 Metal Mixture 330 Metal Film 350, 351, 360, 361 Load Lock Chamber W Wafer

Claims (15)

  1. 基板上に金属膜を形成する金属膜形成システムであって、
    基板と金属膜との定着性を向上させるための前処理液を基板上に塗布して、当該基板上に下地膜を形成する前処理ステーションと、
    前記下地膜が形成された基板上に金属錯体と溶媒の金属混合液を塗布して、当該基板上に金属膜を形成する主処理ステーションと、
    前記前処理ステーションに対して基板を搬入出する搬入出ステーションと、
    前記搬入出ステーションと前記前処理ステーションとに接続され、内部を不活性ガスの大気圧雰囲気又は減圧雰囲気に切り替え可能で、且つ基板を一時的に収容する第１のロードロックユニットと、
    前記前処理ステーションと前記主処理ステーションとに接続され、内部を不活性ガスの大気圧雰囲気又は減圧雰囲気に切り替え可能で、且つ基板を一時的に収容する第２のロードロックユニットと、を有し、
    前記主処理ステーションは、内部を不活性ガスの大気圧雰囲気又は減圧雰囲気に切り替え可能に構成されている。     A metal film forming system for forming a metal film on a substrate,
    A pretreatment station for applying a pretreatment liquid on the substrate to improve the fixing property between the substrate and the metal film, and forming a base film on the substrate;
    A main processing station for applying a metal complex and a metal mixed solution of a solvent on the substrate on which the base film is formed, and forming a metal film on the substrate;
    A loading / unloading station for loading / unloading substrates to / from the pretreatment station;
    A first load lock unit connected to the carry-in / out station and the pre-treatment station, the inside of which can be switched to an atmospheric pressure atmosphere or a reduced-pressure atmosphere of an inert gas, and which temporarily stores a substrate;
    A second load lock unit connected to the pre-processing station and the main processing station, the inside of which can be switched to an atmospheric pressure atmosphere or a reduced-pressure atmosphere of an inert gas, and which temporarily stores a substrate. ,
    The main processing station is configured to be switchable to an atmospheric pressure atmosphere or a reduced pressure atmosphere of an inert gas.
  2. 請求項１に記載の金属膜形成システムであって、
    前記前処理ステーションは、内部を不活性ガスの大気圧雰囲気又は減圧雰囲気に切り替え可能に構成されている。     The metal film forming system according to claim 1,
    The pretreatment station is configured to be switchable to an atmospheric pressure atmosphere or a reduced pressure atmosphere of an inert gas.
  3. 請求項２に記載の金属膜形成システムであって、
    前記前処理ステーションは、
    基板上に前記前処理液を塗布する前処理液塗布ユニットと、
    前記前処理液が塗布された基板を熱処理する熱処理ユニットと、
    前記前処理液塗布ユニット、前記熱処理ユニット、前記第１のロードロックユニット及び前記第２のロードロックユニットに接続され、基板を搬送する基板搬送機構を備えた第１の搬送ユニットと、を有し、
    前記主処理ステーションは、
    基板上に前記金属混合液を塗布する金属混合液塗布ユニットと、
    前記金属混合液が塗布された基板を第１の温度まで熱処理する前熱処理ユニットと、
    前記第１の温度まで熱処理された基板をさらに第１の温度よりも高い第２の温度まで熱処理する後熱処理ユニットと、
    前記金属混合液塗布ユニット、前記前熱処理ユニット、前記後熱処理ユニット及び前記第２のロードロックユニットに接続され、基板を搬送する基板搬送機構を備えた第２の搬送ユニットと、を有し、
    前記前処理液塗布ユニット、前記熱処理ユニット、前記第１の搬送ユニット、前記金属混合液塗布ユニット、前記前熱処理ユニット、前記後熱処理ユニット、前記第２の搬送ユニットは、それぞれ内部を不活性ガスの大気圧雰囲気又は減圧雰囲気に切り替え可能に構成されている。     The metal film forming system according to claim 2,
    The pretreatment station is
    A pretreatment liquid application unit for applying the pretreatment liquid on a substrate;
    A heat treatment unit for heat-treating the substrate coated with the pretreatment liquid;
    A first transport unit having a substrate transport mechanism connected to the pretreatment liquid application unit, the heat treatment unit, the first load lock unit, and the second load lock unit and transporting a substrate; ,
    The main processing station is
    A metal mixture application unit for applying the metal mixture on a substrate;
    A pre-heat treatment unit for heat-treating the substrate coated with the metal mixed solution to a first temperature;
    A post-heat treatment unit that heat-treats the substrate heat-treated to the first temperature to a second temperature higher than the first temperature;
    A second transport unit provided with a substrate transport mechanism connected to the metal liquid mixture application unit, the pre-heat treatment unit, the post-heat treatment unit, and the second load lock unit, and transports a substrate;
    The pretreatment liquid coating unit, the heat treatment unit, the first transport unit, the metal mixed liquid coating unit, the preheat treatment unit, the post heat treatment unit, and the second transport unit are each filled with an inert gas. It can be switched to an atmospheric pressure atmosphere or a reduced pressure atmosphere.
  4. 請求項１に記載の金属膜形成システムであって、
    前記第１のロードロックユニットと前記第２のロードロックユニットは、それぞれ基板を所定の温度に調節する温度調節機構を有する。     The metal film forming system according to claim 1,
    Each of the first load lock unit and the second load lock unit has a temperature adjustment mechanism for adjusting the substrate to a predetermined temperature.
  5. 請求項１に記載の金属膜形成システムであって、
    前記第１のロードロックユニットと前記第２のロードロックユニットには、それぞれ上下２段にロードロック室が配置され、
    前記各ロードロック室は、内部を不活性ガスの大気圧雰囲気又は減圧雰囲気に切り替え可能で、且つ基板を一時的に収容するように構成されている。     The metal film forming system according to claim 1,
    In the first load lock unit and the second load lock unit, load lock chambers are arranged in two upper and lower stages, respectively.
    Each of the load lock chambers can be switched to an atmospheric pressure atmosphere or a reduced pressure atmosphere of an inert gas, and is configured to temporarily accommodate a substrate.
  6. 請求項１に記載の金属膜形成システムであって、
    前記第１のロードロックユニットと前記第２のロードロックユニットには、それぞれ２室のロードロック室が水平方向に配置され、
    前記各ロードロック室は、内部を不活性ガスの大気圧雰囲気又は減圧雰囲気に切り替え可能で、且つ基板を一時的に収容するように構成されている。     The metal film forming system according to claim 1,
    In each of the first load lock unit and the second load lock unit, two load lock chambers are arranged in the horizontal direction,
    Each of the load lock chambers can be switched to an atmospheric pressure atmosphere or a reduced pressure atmosphere of an inert gas, and is configured to temporarily accommodate a substrate.
  7. 請求項１に記載の金属膜形成システムであって、
    前記金属錯体はアルミニウム原子を有し、前記前処理液は有機金属化合物を有する。     The metal film forming system according to claim 1,
    The metal complex has an aluminum atom, and the pretreatment liquid has an organometallic compound.
  8. 金属膜形成システムを用いて、基板上に金属膜を形成する金属膜形成方法であって、
    前記金属膜形成システムは、
    基板と金属膜との定着性を向上させるための前処理液を基板上に塗布して、当該基板上に下地膜を形成する前処理ステーションと、
    前記下地膜が形成された基板上に金属錯体と溶媒の金属混合液を塗布して、当該基板上に金属膜を形成し、且つ内部を不活性ガスの大気圧雰囲気又は減圧雰囲気に切り替え可能な主処理ステーションと、
    前記前処理ステーションに対して基板を搬入出する搬入出ステーションと、
    前記搬入出ステーションと前記前処理ステーションとに接続され、内部を不活性ガスの大気圧雰囲気又は減圧雰囲気に切り替え可能で、且つ基板を一時的に収容する第１のロードロックユニットと、
    前記前処理ステーションと前記主処理ステーションとに接続され、内部を不活性ガスの大気圧雰囲気又は減圧雰囲気に切り替え可能で、且つ基板を一時的に収容する第２のロードロックユニットと、を有し、
    前記金属膜形成方法は、
    前記搬入出ステーションから前記第１のロードロックユニットに基板を搬送し、当該第１のロードロックユニット内の雰囲気を減圧した後、不活性ガスの大気圧雰囲気にする第１の工程と、
    その後、前記第１のロードロックユニットから前記前処理ステーションに基板を搬送し、当該前処理ステーションにおいて、前記前処理液を基板上に塗布して、当該基板上に下地膜を形成する第２の工程と、
    その後、前記前処理ステーションから前記第２のロードロックユニットに基板を搬送し、当該第２のロードロックユニット内の雰囲気を減圧した後、不活性ガスの大気圧雰囲気にする第３の工程と、
    その後、前記第２のロードロックユニットから前記主処理ステーションに基板を搬送し、当該主処理ステーションにおいて、不活性ガスの大気圧雰囲気中で前記金属混合液を基板上に塗布して、当該基板上に金属膜を形成する第４の工程と、
    その後、前記主処理ステーションから前記第２のロードロックユニットに基板を搬送し、当該第２のロードロックユニット内の雰囲気を減圧した後、不活性ガスの大気圧雰囲気にする第５の工程と、
    その後、前記第２のロードロックユニットから前記前処理ステーション及び前記第１のロードロックユニットを介して前記搬入出ステーションに基板を搬送する第６の工程と、を有する。     A metal film forming method for forming a metal film on a substrate using a metal film forming system,
    The metal film forming system includes:
    A pretreatment station for applying a pretreatment liquid on the substrate to improve the fixing property between the substrate and the metal film, and forming a base film on the substrate;
    A metal mixed solution of a metal complex and a solvent is applied on the substrate on which the base film is formed, a metal film is formed on the substrate, and the inside can be switched to an atmospheric pressure atmosphere or a reduced pressure atmosphere of an inert gas. A main processing station;
    A loading / unloading station for loading / unloading substrates to / from the pretreatment station;
    A first load lock unit connected to the carry-in / out station and the pre-treatment station, the inside of which can be switched to an atmospheric pressure atmosphere or a reduced-pressure atmosphere of an inert gas, and which temporarily stores a substrate;
    A second load lock unit connected to the pre-processing station and the main processing station, the inside of which can be switched to an atmospheric pressure atmosphere or a reduced-pressure atmosphere of an inert gas, and which temporarily stores a substrate. ,
    The metal film forming method includes:
    A first step of transporting the substrate from the loading / unloading station to the first load lock unit, depressurizing the atmosphere in the first load lock unit, and then setting the atmosphere to an inert gas atmospheric pressure;
    Thereafter, the substrate is transported from the first load lock unit to the pretreatment station, and the pretreatment liquid is applied onto the substrate at the pretreatment station to form a base film on the substrate. Process,
    A third step of transferring the substrate from the pretreatment station to the second load lock unit, depressurizing the atmosphere in the second load lock unit, and then setting the atmosphere to an inert gas atmospheric pressure;
    Thereafter, the substrate is transported from the second load lock unit to the main processing station, and the metal mixture is applied onto the substrate in an atmospheric pressure atmosphere of an inert gas at the main processing station. A fourth step of forming a metal film on the substrate;
    Thereafter, a substrate is transferred from the main processing station to the second load lock unit, and after reducing the atmosphere in the second load lock unit, a fifth step of bringing the atmosphere into an inert gas atmospheric pressure;
    And a sixth step of transporting the substrate from the second load lock unit to the loading / unloading station via the pretreatment station and the first load lock unit.
  9. 請求項８に記載の金属膜形成方法であって、
    前記前処理ステーションは、内部を不活性ガスの大気圧雰囲気又は減圧雰囲気に切り替え可能に構成され、
    前記第２の工程は、前記前処理ステーションの内部を不活性ガスの大気圧雰囲気にした状態で行われる。     The metal film forming method according to claim 8,
    The pretreatment station is configured to be able to switch the inside to an atmospheric pressure atmosphere or a reduced pressure atmosphere of an inert gas,
    The second step is performed in a state where the inside of the pretreatment station is in an inert gas atmospheric pressure atmosphere.
  10. 請求項８に記載の金属膜形成方法であって、
    前記第２の工程において、基板上に前記前処理液を塗布した後、当該基板を熱処理し、
    前記第４の工程において、基板上に前記金属混合液を塗布した後、当該基板を熱処理する。     The metal film forming method according to claim 8,
    In the second step, after applying the pretreatment liquid on the substrate, the substrate is heat-treated,
    In the fourth step, after the metal mixed solution is applied on the substrate, the substrate is heat-treated.
  11. 請求項８に記載の金属膜形成方法であって、
    前記第３の工程において、基板を常温に温度調節し、
    前記第６の工程において、前記第１のロードロックユニットで基板を常温に温度調節する。     The metal film forming method according to claim 8,
    In the third step, the temperature of the substrate is adjusted to room temperature,
    In the sixth step, the temperature of the substrate is adjusted to room temperature by the first load lock unit.
  12. 請求項８に記載の金属膜形成方法であって、
    前記第１のロードロックユニットと前記第２のロードロックユニットには、それぞれ上下２段にロードロック室が配置され、
    前記第１の工程と前記第６の工程は、前記第１のロードロックユニットの各ロードロック室でそれぞれ行われ、
    前記第３の工程と前記第５の工程は、前記第２のロードロックユニットの各ロードロック室でそれぞれ行われる。     The metal film forming method according to claim 8,
    In the first load lock unit and the second load lock unit, load lock chambers are arranged in two upper and lower stages, respectively.
    The first step and the sixth step are respectively performed in each load lock chamber of the first load lock unit,
    The third step and the fifth step are respectively performed in each load lock chamber of the second load lock unit.
  13. 請求項８に記載の金属膜形成方法であって、
    前記第１のロードロックユニットと前記第２のロードロックユニットには、それぞれ２室のロードロック室が水平方向に配置され、
    前記第１の工程と前記第６の工程は、前記第１のロードロックユニットの各ロードロック室でそれぞれ行われ、
    前記第３の工程と前記第５の工程は、前記第２のロードロックユニットの各ロードロック室でそれぞれ行われる。     The metal film forming method according to claim 8,
    In each of the first load lock unit and the second load lock unit, two load lock chambers are arranged in the horizontal direction,
    The first step and the sixth step are respectively performed in each load lock chamber of the first load lock unit,
    The third step and the fifth step are respectively performed in each load lock chamber of the second load lock unit.
  14. 請求項８に記載の金属膜形成方法であって、
    前記金属錯体はアルミニウム原子を有し、前記前処理液は有機金属化合物を有する。     The metal film forming method according to claim 8,
    The metal complex has an aluminum atom, and the pretreatment liquid has an organometallic compound.
  15. 基板上に金属膜を形成する金属膜形成方法を金属膜形成システムによって実行させるために、当該金属膜形成システムを制御する制御部のコンピュータ上で動作するプログラムを格納した読み取り可能なコンピュータ記憶媒体であって、
    前記金属膜形成システムは、
    基板と金属膜との定着性を向上させるための前処理液を基板上に塗布して、当該基板上に下地膜を形成する前処理ステーションと、
    前記下地膜が形成された基板上に金属錯体と溶媒の金属混合液を塗布して、当該基板上に金属膜を形成し、且つ内部を不活性ガスの大気圧雰囲気又は減圧雰囲気に切り替え可能な主処理ステーションと、
    前記前処理ステーションに対して基板を搬入出する搬入出ステーションと、
    前記搬入出ステーションと前記前処理ステーションとに接続され、内部を不活性ガスの大気圧雰囲気又は減圧雰囲気に切り替え可能で、且つ基板を一時的に収容する第１のロードロックユニットと、
    前記前処理ステーションと前記主処理ステーションとに接続され、内部を不活性ガスの大気圧雰囲気又は減圧雰囲気に切り替え可能で、且つ基板を一時的に収容する第２のロードロックユニットと、を有し、
    前記金属膜形成方法は、
    前記搬入出ステーションから前記第１のロードロックユニットに基板を搬送し、当該第１のロードロックユニット内の雰囲気を減圧した後、不活性ガスの大気圧雰囲気にする第１の工程と、
    その後、前記第１のロードロックユニットから前記前処理ステーションに基板を搬送し、当該前処理ステーションにおいて、前記前処理液を基板上に塗布して、当該基板上に下地膜を形成する第２の工程と、
    その後、前記前処理ステーションから前記第２のロードロックユニットに基板を搬送し、当該第２のロードロックユニット内の雰囲気を減圧した後、不活性ガスの大気圧雰囲気にする第３の工程と、
    その後、前記第２のロードロックユニットから前記主処理ステーションに基板を搬送し、当該主処理ステーションにおいて、不活性ガスの大気圧雰囲気中で前記金属混合液を基板上に塗布して、当該基板上に金属膜を形成する第４の工程と、
    その後、前記主処理ステーションから前記第２のロードロックユニットに基板を搬送し、当該第２のロードロックユニット内の雰囲気を減圧した後、不活性ガスの大気圧雰囲気にする第５の工程と、
    その後、前記第２のロードロックユニットから前記前処理ステーション及び前記第１のロードロックユニットを介して前記搬入出ステーションに基板を搬送する第６の工程と、を有する。     A readable computer storage medium storing a program that operates on a computer of a control unit that controls the metal film forming system in order to cause the metal film forming system to execute a metal film forming method for forming a metal film on a substrate. There,
    The metal film forming system includes:
    A pretreatment station for applying a pretreatment liquid on the substrate to improve the fixing property between the substrate and the metal film, and forming a base film on the substrate;
    A metal mixed solution of a metal complex and a solvent is applied on the substrate on which the base film is formed, a metal film is formed on the substrate, and the inside can be switched to an atmospheric pressure atmosphere or a reduced pressure atmosphere of an inert gas. A main processing station;
    A loading / unloading station for loading / unloading substrates to / from the pretreatment station;
    A first load lock unit connected to the carry-in / out station and the pre-treatment station, the inside of which can be switched to an atmospheric pressure atmosphere or a reduced-pressure atmosphere of an inert gas, and which temporarily stores a substrate;
    A second load lock unit connected to the pre-processing station and the main processing station, the inside of which can be switched to an atmospheric pressure atmosphere or a reduced-pressure atmosphere of an inert gas, and which temporarily stores a substrate. ,
    The metal film forming method includes:
    A first step of transporting the substrate from the loading / unloading station to the first load lock unit, depressurizing the atmosphere in the first load lock unit, and then setting the atmosphere to an inert gas atmospheric pressure;
    Thereafter, the substrate is transported from the first load lock unit to the pretreatment station, and the pretreatment liquid is applied onto the substrate at the pretreatment station to form a base film on the substrate. Process,
    A third step of transferring the substrate from the pretreatment station to the second load lock unit, depressurizing the atmosphere in the second load lock unit, and then setting the atmosphere to an inert gas atmospheric pressure;
    Thereafter, the substrate is transported from the second load lock unit to the main processing station, and the metal mixture is applied onto the substrate in an atmospheric pressure atmosphere of an inert gas at the main processing station. A fourth step of forming a metal film on the substrate;
    Thereafter, a substrate is transferred from the main processing station to the second load lock unit, and after reducing the atmosphere in the second load lock unit, a fifth step of bringing the atmosphere into an inert gas atmospheric pressure;
    And a sixth step of transporting the substrate from the second load lock unit to the loading / unloading station via the pretreatment station and the first load lock unit.
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