JP4985449B2 - Deposition equipment - Google Patents

Description

The present invention is related to the film forming apparatus for forming a thin polymer film such as a polyimide thin film on a surface of a semiconductor wafer.

In general, in order to manufacture a semiconductor integrated circuit or the like, various processes such as a film forming process, an etching process, and an oxidation process are repeatedly performed on a semiconductor wafer made of a silicon substrate or the like. In general, inorganic insulating films such as SiO ₂ films are the mainstream as insulating films used in the semiconductor integrated circuits. However, since the manufacturing process and process conditions have been relatively simple, Polymer thin films using organic substances have been studied (Patent Documents 1, 2, 3 and Non-Patent Documents).

  For example, this polymer thin film typified by a polyimide thin film has been studied for use as an interlayer insulating film in a semiconductor integrated circuit, a liquid crystal alignment film in a liquid crystal display device, or the like. As a method for forming this polymer thin film, a raw material monomer is dissolved in a solvent, and this is spin-coated on a semiconductor wafer and polymerized, or a so-called wet method, or a raw material monomer in a vacuum vessel in a reduced pressure atmosphere. A vapor deposition polymerization method or the like in which is vaporized and polymerized is known.

JP-A 61-261322 Japanese Patent Laid-Open No. 9-143681 JP 2000-21867 A "Electrical, thermal and mechanical properties of polyimine thin films pre-prepared by high-temperature vapor deposition polymerization," High Perm. 5 (1993) 229-237 pp. ]

  By the way, in the above wet method, not only is it difficult to reduce the film thickness sufficiently, but the adhesion between the thin film and the substrate (semiconductor wafer) is not sufficient, and impurities are added during the addition and removal of the solvent. There was a drawback that it was easy to mix.

  On the other hand, the vapor deposition polymerization method is a relatively preferable method because it can eliminate all the disadvantages of the wet method described above. However, with this vapor deposition polymerization method, it is quite difficult to control the temperature inside the processing vessel including the semiconductor wafer. Especially when the temperature control is performed so as to obtain a polymer thin film having a good film thickness and film quality, the inner wall of the processing vessel is unnecessary. Therefore, the frequency of the cleaning process for removing this unnecessary film increases, the cleaning process time becomes longer, the use efficiency of the apparatus is lowered, and the throughput is greatly reduced. There was a problem such as.

The present invention has been devised to pay attention to the above problems and to effectively solve them. An object of the present invention is to reduce the frequency of the cleaning process by suppressing the deposition of an unnecessary adhesion film on the side wall of the processing vessel without causing deterioration of the film quality, and shortening the cleaning process time. Accordingly, it is an object of the present invention to provide a film forming apparatus capable of improving the use efficiency of the apparatus and greatly improving the throughput.

  As a result of intensive studies on the formation process of the polymer thin film adhering to the surface of the semiconductor wafer and the sidewall of the processing vessel, the present inventors have set the wafer temperature to be lower than the temperature of the sidewall of the processing vessel. Thus, the present invention has been achieved by obtaining the knowledge that the gaseous raw material monomer is mainly attracted to the wafer side by thermophoresis.

According to a first aspect of the present invention, there is provided a film forming apparatus for forming a polymer thin film on a surface of an object to be processed, wherein the object to be processed is accommodated and a lower end is opened, and a vertically long cylindrical body having a ceiling is provided. A processing container, a lid for hermetically sealing the opening, a holding means for holding the object to be processed in the processing container, a vacuum exhaust system for evacuating the processing container, and into the processing container A gas supply means for supplying a plurality of source gases of the polymer thin film, a container heating means for heating the processing container, an internal cooling means for cooling the holding means, a side wall of the processing container, and the holding means. And a temperature control unit that controls the temperature difference between them to be equal to or greater than a predetermined temperature difference.

  Thus, in the film forming apparatus for forming the polymer thin film on the surface of the object to be processed, the container heating means is provided on the processing container side, the internal cooling means is provided on the holding means side, the side wall of the processing container, the holding means, Since the temperature difference between the two is controlled to be equal to or higher than the predetermined temperature difference, the frequency of the cleaning process is reduced by suppressing the deposition of an unnecessary adhesion film on the side wall of the processing vessel without causing deterioration of the film quality. In addition, the cleaning process time can be shortened, thereby increasing the use efficiency of the apparatus and greatly improving the throughput.

In this case , for example, as described in claim 2, the holding unit includes a plurality of support columns, and a plurality of mounting tables that are fixed by the support columns over a plurality of stages and each mounts the object to be processed. Have

Further, for example , as described in claim 3, the internal cooling means includes a refrigerant passage formed in the support column and the mounting table, and a refrigerant circulation portion for circulating the refrigerant in the refrigerant passage.
Further, for example , as described in claim 4, the holding means has an elevating mechanism for carrying in or out the processing container from the opening.
For example , as described in claim 5, the processing container is made of quartz.

For example , as described in claim 6, the holding means is made of a metal that does not contaminate the object to be processed.
For example , as described in claim 7, the source gas is flowed by a carrier gas.
For example , as described in claim 8, the predetermined temperature difference or more is 50 ° C. or more.
For example , as described in claim 9, the pressure in the processing container is in the range of 133 to 1333 Pa (1 to 10 Torr).

For example , as described in claim 10, the temperature of the holding means is 100 ° C. or higher.
For example , as described in claim 11, the plurality of source gases are composed of pyromellitic dianhydride (PMDA) and 4,4′-diaminodiphenyl ether (ODA), and the polymer thin film is a polyimide thin film. is there.

Further, for example , as described in claim 12, the plurality of source gases are composed of 4,4′-diphenylmethane diisocyanate (MDI) and 4,4′-diaminodiphenylmethane (MDA), and the polymer thin film is Polyurea thin film.

The related art of the present invention relates to a film forming method for forming a polymer thin film on a surface of an object to be processed, wherein the object to be processed held in a holding means in a vacuum-evacuated processing container is accommodated, and the processing container is A plurality of raw material gases are introduced into the processing container while heating and cooling so that the temperature difference between the two is equal to or greater than a predetermined temperature difference, and the polymer is formed on the surface of the object to be processed. A thin film forming method is characterized in that a thin film is formed.

In this case, the hold means For example are formed refrigerant passages, the refrigerant for cooling this to the refrigerant passage is circulated.
The pre-Symbol raw material gas if example embodiment, flowed by a carrier gas.
Also, the plant or the temperature difference constant For example is 50 ° C. or higher.

The pressure in the treatment hairdressing device For example, are within the scope of 133~1333Pa (1~10Torr).
The temperature before Symbol holding means if example embodiment is 100 ° C. or higher.
The plurality of raw material gases For example becomes more and pyromellitic dianhydride (PMDA) 4,4'-diaminodiphenyl ether (ODA), the polymer film is a polyimide thin film.

Also, the multiple raw material gas For example becomes more and 4,4'-diphenylmethane diisocyanate (MDI) and 4,4'-diaminodiphenylmethane (MDA), the polymer film is a polyurea film.

Related art of the present invention, readable by a computer for controlling the time to form a polymer thin film on the surface of the object by using the film forming apparatus, the film forming apparatus to perform the film formation how A storage medium characterized by storing a program.

According to the film forming apparatus of the present invention, the following excellent operational effects can be exhibited.
In a film forming apparatus for forming a polymer thin film on the surface of an object to be processed, a temperature between the side wall of the processing container and the holding means is provided by providing a container heating means on the processing container side and an internal cooling means on the holding means side. Since the difference is controlled to be equal to or greater than a predetermined temperature difference, it is possible to reduce the frequency of the cleaning process by suppressing the deposition of an unnecessary attached film on the side wall of the processing container without causing deterioration of the film quality. The cleaning processing time can be shortened, thereby increasing the use efficiency of the apparatus and greatly improving the throughput.

Hereinafter, an embodiment of a film forming apparatus according to the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a sectional view showing a film forming apparatus according to the present invention, FIG. 2 is a transverse sectional view showing a wafer boat as holding means, and FIG. 3 is a partially enlarged view showing the wafer boat. Here, a case where a polyimide thin film, which is a polyimide resin thin film, is formed as an example of the polymer thin film will be described.

  As shown in the figure, this film forming apparatus 2 has a vertical processing container 4 having a ceiling with a lower end opened and having a predetermined length in the vertical direction and having a cylindrical shape. For example, quartz having high heat resistance can be used for the processing container 4.

  A wafer boat 6 as a holding means on which a plurality of semiconductor wafers W as processing objects are placed at a predetermined pitch over a plurality of stages from below the processing container 4 is removably inserted and removed. The structure of the wafer boat 6 will be described later. When the wafer boat 6 is inserted into the processing container 4, the opening 4A at the lower end of the processing container 4 is closed and sealed with a metal lid 8 such as an aluminum alloy (including aluminum). The

  At this time, a seal member 10 such as an O-ring is interposed between the lower end portion of the processing container 4 and the peripheral portion of the lid portion 8 in order to maintain airtightness. The lid 8 may be formed of a stainless plate. The wafer boat 6 is attached and fixed to the upper surface side of the lid portion 8. The lid portion 8 is attached to the tip of an arm 12A extending from an elevating mechanism 12 such as a boat elevator, for example, so that the wafer boat 6 and the lid portion 8 can be integrally raised and lowered.

  The side of the processing container 4 is provided with container heating means 14 made of, for example, a carbon wire heater so as to surround the processing container 4, and the quartz processing container 4 located inside the container can be heated. It is like that. And this container heating means 14 is connected to the heater power supply 15 which supplies electric power to this. Further, a heat insulating material 16 is provided on the outer periphery of the container heating means 14 to ensure this thermal stability.

  A temperature sensor 18 made of, for example, a thermocouple is provided in the vicinity of the container heating unit 14, and measures the temperature of the processing container 4 close to the container heating unit 14. A gas supply means 20 for supplying a predetermined gas into the processing container 4 is provided on the lower side wall of the processing container 4. Specifically, the gas supply means 20 includes a first source gas supply system 22 and a second source gas supply system for supplying a plurality of source gases for film formation, here two types of source gases. 24 mainly.

Actually, although not shown, for example, an inert gas supply system that supplies a rare gas such as N ₂ gas, Ar, or He as a purge gas or a dilution gas as necessary, or a cleaning that supplies a cleaning gas. A gas supply system is also provided. The first source gas supply system 22 and the second source gas supply system 24 are, for example, first and second gas nozzles 22A made of quartz provided so as to penetrate through the lower side wall of the processing vessel 4, respectively. , 24A. Here, straight straight pipes are used as the first and second gas nozzles 22A and 24A.

  Each of these gas nozzles 22A and 24A is actually provided in a flange portion 4B having a thickness at the lower end portion of the processing container 4. Further, instead of this structure, a cylindrical manifold made of stainless steel may be provided at the lower end of the processing container 4, and the gas nozzles 22A and 24A may be provided in this manifold.

  Gas passages 22B and 24B are connected to the first and second gas nozzles 22A and 24A, respectively, so as to supply respective source gases whose flow rates are controlled. The gas passages 22B and 24B are provided with passage heaters 22C and 24C, such as tape heaters, for example, and each raw material gas whose vapor pressure is increased by heating the passages is provided. It is designed to prevent liquefaction and solidification during the flow. Here, for example, pyromellitic dianhydride (hereinafter also referred to as “PMDA”) and 4,4′-diaminodiphenyl ether (hereinafter also referred to as “ODA”) are used as the two kinds of source gases.

Since the PMDA is solid at room temperature, it is sublimated by heating to about 250 ° C., for example, and the generated gas is transferred together with a carrier gas whose flow rate is controlled. Further, since the ODA is solid at room temperature, it is liquefied by heating, and vapor is generated by bubbling this liquid with a carrier gas whose flow rate is controlled, and is transferred together with the carrier gas. As the carrier gas, for example, N ₂ gas which is an inert gas is used here, but a rare gas such as He may be used instead.

  Further, an exhaust port 28 bent in an L shape in the lateral direction is provided in the ceiling portion of the processing container 4. A vacuum exhaust system 30 for evacuating the inside of the processing container 4 is connected to the exhaust port 28. Specifically, the vacuum exhaust system 30 has an exhaust passage 32 connected to the exhaust port 28. The exhaust passage 32 includes a pressure control valve 32A such as a butterfly valve, and a reaction in the exhaust gas. A trap mechanism 32B and a vacuum pump 32C for sequentially collecting by-products and unreacted raw material gas are respectively provided.

  Here, the wafer boat 6 as a holding means for holding the wafer W will be described. As shown in FIGS. 2 and 3, the wafer boat 6 includes a plurality of columns, three columns 36A, 36B, and 36C in the illustrated example, and a plurality of stages along the longitudinal direction of the columns 36A to 36C. It is mainly composed of a plurality of fixed mounting tables 38. The wafer boat 6 is provided with an internal cooling means 40 (see FIG. 1) for cooling the wafers W held by the wafer boat 6.

  Specifically, the entire wafer boat 6 is formed of a metal that does not cause contamination of the wafer W, such as aluminum or an aluminum alloy. The three struts 36A to 36C forming a part of the wafer boat 6 are provided upright from the lid portion 8 that seals the opening 4A at the lower end of the processing container 4, and each of the struts 36A to 36C is provided. The upper ends are connected to each other by a top plate 42 (see FIG. 1). The mounting table 38 is formed in a disk shape having a predetermined thickness, and is supported on the back surface of the mounting table 38 in an L shape extending in the center direction from the three columns 36A to 36C. The distal ends of the arms 44A, 44B and 44C are connected and fixed to support the mounting table 38 (see FIG. 2). Then, the wafer W is directly mounted on the upper surface side of the mounting table 38. The pitch P1 of the mounting table 38 is, for example, about 8 mm, but is not particularly limited.

  Here, the diameter of the mounting table 38 is set to be slightly smaller than the diameter of the wafer W, for example, about several centimeters, and as shown in FIG. 2, a bifurcated fork 46 for transferring the wafer W is provided. Thus, the lower surface of the peripheral portion of the wafer W is supported and can be lifted or lowered.

  A transfer mechanism (not shown) having the fork 46 is provided in a loading area below the processing container 4. Further, as shown in FIG. 2, the three columns 36A to 36C are arranged at equal intervals on a substantially semicircular circumferential portion on the opposite side to the direction in which the fork 46 enters, and the wafer is transferred. The time fork 46 and each of the columns 36A to 36C do not interfere with each other. In the case shown in FIG. 1, seven mounting tables 38 are provided. However, depending on the size of the processing container 4 in the height direction, about 25 to 100 are actually provided.

  On the other hand, the internal cooling means 40 for cooling the wafer W is mainly constituted by a refrigerant passage 48 formed in the wafer boat 6 and a refrigerant circulation portion 50 for circulating the refrigerant through the refrigerant passage 48. Specifically, the refrigerant passage 48 includes two strut passages 52A and 52C formed along the two struts 36A and 36C among the three struts 36A to 36C, and the two struts 36A. 36C, arm passages 54A, 54C formed in the support arms 44A, 44C extending from 36C, and a mounting base passage 56 formed in, for example, a meandering manner in the mounting base 38 over the entire surface thereof. Yes.

  In each mounting table 38, the arm internal passage 54A, the mounting base internal passage 56, and the arm internal passage 54C are connected in series, and each of the internal arm passages 54A and 54C is connected to the two post internal passages 52A and 52C. They are connected to each other. As a result, the refrigerant can be allowed to flow to the placement table passage 56 of each placement table 38.

  Further, as shown in FIG. 1, the strut passages 52 </ b> A and 52 </ b> C and the refrigerant circulation section 50 are connected by a bellows-like expansion / contraction tube 58 that can be expanded and contracted. The expansion and contraction tube 58 can follow the up-and-down movement of the wafer boat 6 while circulating the refrigerant. As the internal cooling means 40 formed in this way, for example, a chiller (registered trademark) can be used. A temperature sensor 60 made of, for example, a thermocouple for measuring the wafer temperature (mounting table temperature) is provided on a part of the mounting table 38 of the wafer boat 6.

  The refrigerant circulation unit 50 and the heater power supply 15 are controlled by a temperature control unit 62 made of, for example, a computer. Specifically, the temperature control unit 62 receives both outputs of the temperature sensor 18 that detects the temperature of the processing container 4 and the temperature sensor 60 that detects the temperature of the mounting table 38. And the mounting table 38 are controlled so that the temperature difference is not less than a predetermined temperature difference, for example, not less than 50 ° C. That is, the temperature of the side wall of the processing container 4 is controlled to be higher by 50 ° C. or more than the mounting table 38.

  The operation of the entire apparatus, for example, the start and stop of the supply of each gas, the pressure control in the processing container 4, the operation command to the temperature control unit 62, and the like are controlled by a device control unit 64 such as a computer. . The apparatus control unit 64 stores a storage medium 66 such as a flexible disk, a flash memory, a hard disk, a CD-ROM, or a DVD for storing a program that can be read and written by a computer for controlling the operation of the entire apparatus. have.

  Next, a film forming method performed using the film forming apparatus 2 configured as described above will be described. As described above, the operation described below is performed based on the program stored in the storage medium 66.

  First, when the semiconductor wafer W made of, for example, a silicon wafer is in an unloaded state and the film forming apparatus 2 is in a standby state, the processing container 4 is maintained at a process temperature or a temperature lower than this, and a large number of normal temperature sheets, for example, 50 The wafer boat 6 with the wafers W placed thereon is loaded into the processing container 4 which has been brought into the hot wall state by the container heating means 14 from below, and is loaded at the lower end of the processing container 4 by the lid 8. The inside of the processing container 4 is sealed by closing the opening 4A.

Then, the inside of the processing container 4 is evacuated by the evacuation system 30 and maintained at a predetermined process pressure, and the power supplied to the container heating means 14 is increased to increase the temperature of the processing container 4 itself and the wafer temperature. Then, the temperature is raised to the process temperature for film formation and stabilized.
Further, the internal cooling means 40 provided in the wafer boat 6 is driven in advance in the wafer boat 6 so that the refrigerant flows in the refrigerant passage 48, and each mounting table 38 is set to a predetermined temperature.

  In other words, the refrigerant supplied from the refrigerant circulation section 50 passes through one of the telescopic pipes 58 and ascends in the intra-post passage 52A provided in the post 52A of the wafer boat 6, and from the intra-post passage 52A to each arm passage 54A. It branches and flows into the mounting base channel | path 56 of each mounting base 38 through this, and this mounting base itself is cooled. The refrigerant flowing in the mounting table passage 56 passes through the other arm inner passage 54C and joins in the pillar inner passage 52C provided in the other pillar 36C, and the joined refrigerant passes through the other telescopic pipe 58. It will return to the circulation part 50. In this way, the refrigerant circulates in the wafer boat 6 and cools the mounting tables 38 and the wafers W mounted thereon.

  Then, in this state, the gas supply means 20 is driven to introduce the PMDA transported together with the carrier gas from the first gas supply system 22 into the processing container 4 and from the second gas supply system 24 to the carrier. The ODA transported together with the gas is introduced into the processing container 4, and the pressure in the processing container 4 is maintained at a predetermined process pressure by the vacuum exhaust system 30. As a result, the raw material gases are polymerized to deposit a thin film made of a polyimide thin film on the surface of the wafer W.

  During the film formation process by this polymerization reaction, the process pressure in the processing container 4 is maintained within a range of 1 to 10 Torr (133.3 to 1333 Pa), for example. The temperatures of the processing container 4 and the mounting table 38 are detected by temperature sensors 18 and 60, respectively, and input to the temperature control unit 62. During the film formation process, the temperature control unit 62 sets the wafer temperature. While maintaining the process temperature, the heater power supply 15 and / or the refrigerant circulating unit 50 are controlled to control the temperature between the side wall of the processing vessel 4 and the mounting table 38 which is a part of the wafer boat 6. The difference is controlled so as to be a predetermined temperature difference or more, specifically 50 ° C. or more.

  In other words, when the cooling means is not provided on the mounting table 38, the mounting table temperature is raised to the same temperature as the side wall of the processing container 4, and therefore the internal cooling means 40 is provided on the mounting table 38 side. The temperature of the processing container 4 is controlled to be higher by 50 ° C. or more than the temperature of the mounting table 38. Here, the temperature of the wafer W mounted on the mounting table 38 is heated to substantially the same temperature as the temperature of the mounting table 38. The temperature of each part at this time is set such that, for example, the temperature of the side wall of the processing container 4 is 250 ° C. or higher, and the temperature of the mounting table 38, that is, the wafer W is set to 200 ° C.

  In this case, the temperature of the side wall of the processing vessel 4 and the temperature of the mounting table 38 are both set higher than the temperature at which PMDA and ODA, which are raw material gases for film formation, are resolidified or reliquefied. And ODA are set within a temperature range in which neither of them is thermally decomposed, but in a temperature range in which both raw material gases as monomers undergo vapor deposition polymerization. In this case, the sublimation temperature of the PMDA is, for example, about 203 ° C., and the thermal decomposition temperature is about 400 ° C. The ODA liquefaction temperature is, for example, about 187 ° C., and the thermal decomposition temperature is about 400 ° C.

  As described above, by providing a temperature difference of 50 ° C. or more between the side wall of the processing container 4 and the mounting table 38, that is, the wafer W, both gaseous PMDA and ODA as raw material monomers are heated by thermophoresis. Is attracted mainly to the lower wafer W side, and a polyimide thin film is formed on the surface of the wafer W as a thin film by vapor deposition polymerization. Further, when the temperature difference is smaller than 50 ° C., the effect of attracting the raw material gas by thermophoresis becomes thin, and the Brownian motion is mainly used, and the thin film is almost evenly formed on the surface of the wafer W and the side wall of the processing container 4. Is not preferable.

  In this way, PMDA and ODA, which are source gases, are difficult to be attracted to the side wall of the processing container 4 having a high temperature, so that it is possible to prevent or suppress the deposition of a thin film on the side wall.

  In the above embodiment, the temperature of the wafer W is set to 200 ° C., and the temperature of the side wall of the processing container 4 is set to 250 ° C. or more. As long as the attraction of the material significantly occurs even at a temperature difference smaller than 50 ° C., the temperature difference may be made smaller. However, by setting the wafer temperature to 200 ° C. or higher, it is possible to reliably evaporate the moisture adhering to the surface and improve the film quality of the polyimide thin film.

  In any case, the temperature of the side wall of the processing container 4 and the temperature of the wafer W (mounting table 38) are maintained at the above temperature difference, the two source gases maintain the vaporized state, do not undergo thermal decomposition, and cause vapor deposition polymerization. Keep within the temperature range. Further, when cleaning is performed in order to remove an unnecessary film in the processing container 4, for example, ozone may be supplied to remove the unnecessary film in the container.

  As described above, according to the embodiment, in the film forming apparatus for forming the polyimide thin film that is a polymer thin film on the surface of the semiconductor wafer W that is the object to be processed, the container heating means 14 is provided and held on the processing container 4 side. Since the internal cooling means 40 is provided on the wafer boat 6 side, which is a means, the temperature difference between the side wall of the processing vessel and the holding means is controlled to be a predetermined temperature difference or more, for example, a temperature difference of 50 ° C. or more. The frequency of the cleaning process can be reduced and the cleaning process time can be shortened by suppressing the deposition of an unnecessary adhesion film on the side wall of the processing container 4 without causing deterioration of the film quality. It is possible to increase the use efficiency and greatly improve the throughput.

<Evaluation of actual film formation process>
Next, an experiment for actually forming a polymer thin film by the method of the present invention using the above apparatus example was conducted, and the evaluation result will be described. Here, PMDA and ODA are used as source gases for film formation, and PMDA in powder form is heated to 260 ° C. and sublimated at room temperature, and this gas is transported by N ₂ gas as a carrier gas. At this time, the flow rate of the carrier gas was 200 sccm, and the flow rate of PMDA was set to about 1 g / min.

Further, ODA that was solid at room temperature was heated to 220 ° C. to be liquefied, and this was bubbled with N ₂ gas as a carrier gas to generate gas and transport it. At this time, the flow rate of the carrier gas was 600 sccm, and the flow rate of ODA was set to about 1 g / min.

  The process pressure in the processing container 4 was set to 5 Torr (666.5 Pa). Then, the temperature of the wafer W (mounting table temperature) was set to 200 ° C. as the process temperature, and the temperature of the sidewall of the processing container 4 was set to 260 ° C., which is 60 ° C. higher than the wafer. When the film formation time was set to 10 minutes and a polyimide thin film was formed as a polymer thin film on the wafer surface with a diameter of 300 mm, a polyimide thin film with a thickness of 2 μm was formed on the wafer surface. Almost no thin film was formed, and the effectiveness of the present invention could be confirmed.

  In the above embodiment, the gas nozzles 22A and 24A of the gas supply means 20 are straight straight tubes. However, the present invention is not limited to this, and the first and second gas nozzles shown in FIG. The second gas nozzles 22A and 24A are respectively formed in a ring shape surrounding the periphery of the wafer boat 6, and each source gas is supplied from a plurality of gas ejection holes 70 provided along the ring-shaped gas nozzles 22A and 24A. You may make it inject. In this case, since each source gas can be supplied substantially evenly along the circumferential direction of the wafer W, the in-plane uniformity of the formed polymer thin film can be improved accordingly.

  In addition, although the case where the processing vessel 4 has a single tube structure has been described as an example, the processing vessel 4 is not limited thereto, and a processing vessel having a double tube structure in which a cylindrical inner cylinder and an outer cylinder are concentrically arranged. May be used. Further, here, a so-called batch type film forming apparatus that performs film forming processing by placing a plurality of semiconductor wafers W on the wafer boat 6 as a holding means has been described, but the present invention is not limited thereto. The present invention can also be applied to a so-called single-wafer type film forming apparatus in which the height of the processing vessel 4 and the wafer boat 6 as a holding means are set to be small to process wafers one by one. .

  Further, here, the case where a polyimide thin film is formed as a polymer thin film using PMDA and ODA as raw material gases has been described as an example, but the present invention is not limited to this. For example, as a raw material gas, 4,4′-diphenylmethane diisocyanate is used. The present invention can also be applied to the case where a polyurea thin film is formed as a polymer thin film using narate (MDI) and 4,4′-diaminodiphenylmethane (MDA). When forming this polyurea thin film, the wafer boat 6 is set to 100 ° C. or higher.

  Although the semiconductor wafer is described as an example of the object to be processed here, the present invention is not limited thereto, and the present invention can be applied to a glass substrate, an LCD substrate, a ceramic substrate, and the like.

It is a section lineblock diagram showing the film deposition system concerning the present invention. It is a cross-sectional view which shows the wafer boat which is a holding means. It is the elements on larger scale which show a wafer boat. It is a figure which shows the modification of a gas nozzle.

Explanation of symbols

2 Deposition device 4 Processing vessel 6 Wafer boat (holding means)
DESCRIPTION OF SYMBOLS 8 Cover part 12 Elevating mechanism 14 Container heating means 20 Gas supply means 22 1st raw material gas supply system 24 2nd raw material gas supply system 30 Vacuum exhaust system 36A-36C Support | pillar 38 Mounting stand 40 Internal cooling means 44A-44C Support arm 48 Refrigerant passage 50 Refrigerant circulation section 52A, 52C In-pillar passage 54A, 54C In-arm passage 56 In-mounting passage 58 Retractable tube 62 Temperature control section 64 Device control section 66 Storage medium W Semiconductor wafer (object to be processed)

Claims (12)

In a film forming apparatus for forming a polymer thin film on the surface of an object to be processed,
A processing container in the form of a vertically long cylindrical body with a ceiling that has an opening with a lower end opened and contains the object to be processed;
A lid that hermetically seals the opening;
Holding means for holding the object to be processed in the processing container;
An evacuation system for evacuating the inside of the processing vessel;
Gas supply means for supplying a plurality of source gases of the polymer thin film into the processing vessel;
Container heating means for heating the processing container;
An internal cooling means for cooling the holding means;
A temperature controller for controlling the temperature difference between the side wall of the processing container and the holding means to be equal to or greater than a predetermined temperature difference;
A film forming apparatus comprising: Said retaining means includes a plurality of supports, No placement claim 1 Symbol and having a plurality of mounting table mounting the object to be processed in each fixed over a plurality of stages by said strut Deposition device. Said internal cooling means, deposition of claim 2 Symbol mounting and having a refrigerant passage formed in said post and said mounting base, and a refrigerant circulation unit for circulating the refrigerant in the refrigerant passage apparatus. It said retaining means, the film forming apparatus請Motomeko 2 or 3 Symbol mounting and having a lifting mechanism for loading or unloading through the opening into the processing vessel. The processing vessel deposition apparatus according to any one of claims 1乃optimum 4, characterized in that made of quartz. It said retaining means, the film forming apparatus according to any one of claims 1乃optimum 5, characterized by comprising a metal, wherein no contamination with respect to the workpiece. The raw material gas, film formation apparatus according to any one of claims 1乃optimum 6, characterized in that flowed by the carrier gas. The predetermined or higher temperature difference, the film forming apparatus according to any one of claims 1乃optimum 7, characterized in that at 50 ° C. or higher. The pressure of the processing vessel, the deposition apparatus according to any one of claims 1乃optimum 8, characterized in that in the range of 133~1333Pa (1~10Torr). Film forming apparatus according to any one of claims 1乃optimum 9, wherein the temperature of said holding means is 100 ° C. or higher. Wherein the plurality of raw material gas, pyromellitic dianhydride becomes more and (PMDA) and 4,4'-diaminodiphenyl ether (ODA), claims 1 to 10, wherein the polymer film is a polyimide thin film The film-forming apparatus as described in any one of these. The plurality of source gases are composed of 4,4'-diphenylmethane diisocyanate (MDI) and 4,4'-diaminodiphenylmethane (MDA), and the polymer thin film is a polyurea thin film. Item 11. The film forming apparatus according to any one of Items 1 to 10 .

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