KR102303033B1 - Deposition apparatus and method - Google Patents

Abstract

The present invention relates to a chamber unit capable of forming a deposition atmosphere on one surface of the processed object, a laser unit installed so as to irradiate a laser to one surface of the processed object through the chamber unit, is connected to the chamber unit, a source is charged therein, and a chamber unit A deposition apparatus comprising a source supply unit capable of supplying a vaporized source, and a stabilizer supply unit accommodated therein, and installed to supply a stabilizer to the source supply unit, and a deposition method using the same, which can prevent deterioration of the source A deposition apparatus and method are provided.

Description

DEPOSITION APPARATUS AND METHOD

The present invention relates to a deposition apparatus and method, and more particularly, to a deposition apparatus and method capable of preventing deterioration of a source.

During the manufacturing of the display device, an open defect may occur due to a disconnection of a conductive line of an element formed on a substrate of the display device. Accordingly, a process of repairing an open defect is performed during manufacturing of the display device.

The repair process is performed in the atmosphere by a chemical vapor deposition-type repair device, which supplies a metal source to the open defect location of the substrate, irradiates a laser to deposit a metal film at the open defect location, and connects the disconnected portion of the conductive line. carried out in a way

The repair apparatus has a canister. In the canister, the metal source is stored as a solid powder. During the repair process, the metal source stored in the canister is vaporized, and the gaseous metal source is supplied to the open defect location.

Meanwhile, during the repair process, over time, the metal source may solidify in a lump inside the canister. As such, when the metal source is degenerated into a lump inside the canister, it is difficult to vaporize the metal source, it is difficult to sufficiently supply the vaporized metal source to an open defect location, and it is difficult to deposit a metal film.

The technology underlying the present invention is disclosed in the following patent documents.

US 10-2013-0088628 A US 10-2005-0045442 A

The present invention provides a deposition apparatus and method capable of preventing deterioration of a source.

A deposition apparatus according to an embodiment of the present invention includes: a chamber unit capable of forming a deposition atmosphere on one surface of a processed object; a laser unit installed to irradiate a laser onto one surface of the processed object through the chamber unit; and a source supply unit connected to the chamber unit, filled with a source therein, and capable of supplying a vaporized source to the chamber unit; and a stabilizer supply unit accommodated therein, and installed to supply the stabilizer to the source supply unit.

The source supply unit may include a source supply connected to the chamber unit and a carrier gas supply connected to the source supply, and the stabilizer supply unit may be connected to the source supply and separated from the carrier gas supply path.

The source supply unit includes a source supply connected to the chamber unit and a carrier gas supply filled with a carrier gas therein, the stabilizer supply unit is connected to the source supply unit, the carrier gas supply unit is connected to the stabilizer supply unit, A carrier gas supply path may pass through the stabilizer supply unit.

The stabilizer supply unit may include: a stabilizer container in which the stabilizer is accommodated; A stabilizer supply pipe connecting the stabilizer container and the source supplier to supply the stabilizer to the source supplier in a liquid state; may include.

The stabilizer supply unit, a pressure vessel in which the pressure gas is accommodated; may include; a pressure pipe connecting the pressure vessel and the stabilizer vessel to inject the pressure gas into the stabilizer vessel.

The stabilizer supply pipe may have an inlet that can be immersed in the stabilizer accommodated in the stabilizer container and an outlet that can be spaced apart from the source filled in the source supplier.

The stabilizer supply unit may include: a stabilizer container in which the stabilizer is accommodated; It may include; a stabilizer transfer pipe connecting the stabilizer container and the source supplier so as to transfer the vaporized stabilizer to the source supplier.

The stabilizer container may be connected to the carrier gas supplier, and the carrier gas supply path may pass through the inside of the stabilizer container and the stabilizer delivery pipe.

The stabilizer transport pipe may have an inlet that can be spaced apart from the stabilizer accommodated in the stabilizer container and an outlet that can be opened from the lower portion of the source feeder.

A deposition method according to an embodiment of the present invention includes the steps of providing a treatment; the process of vaporizing the sauce; The process of supplying a vaporized source to one surface of the treated object; forming a film on one surface of the processed object by irradiating a laser; During the process of vaporizing the source, the step of supplying a stabilizer to the source; It includes; a process of preventing deterioration of the source.

During the process of supplying the vaporized source to one surface of the treated object, the process of transporting the vaporized source as a carrier gas; and, the process of supplying the stabilizer is, separately from the carrier gas, repeating the stabilizer to the source It may include a process of supplying the

In the process of supplying the vaporized source to one surface of the treated object, the process of transporting the vaporized source as a carrier gas; and, the supplying of the stabilizer includes, through a carrier gas supply path, the stabilizer to the source It may include a process of continuously supplying.

The process of repeatedly supplying the stabilizer may include a process of supplying the stabilizer in a liquid state to the source using a pressure gas.

The process of continuously supplying the stabilizer may include: vaporizing the stabilizer; transporting the vaporized stabilizer to the carrier gas; It may include; supplying the vaporized stabilizer to the source.

The source may include a metal source, and the stabilizer may include a hydrocarbon compound.

According to an embodiment of the present invention, during the process, a stabilizer may be added to the source for thin film deposition, and the ratio of the stabilizer input to the source may be maintained. Accordingly, the physical properties of the sauce can be stably maintained, and it is possible to prevent the sauce from being degenerated into a lump during the process. Accordingly, process efficiency and reliability can be improved.

1 is a schematic diagram of a deposition apparatus according to embodiments of the present invention.
2 is a schematic diagram of a supply unit according to a first embodiment of the present invention.
3 is a schematic diagram of a supply unit according to a second embodiment of the present invention.

Hereinafter, with reference to the accompanying drawings, an embodiment of the present invention will be described in detail. However, the present invention is not limited to the embodiments disclosed below, and will be implemented in various different forms. Only the embodiments of the present invention are provided to complete the disclosure of the present invention, and to completely inform those of ordinary skill in the art the scope of the invention. The drawings may be exaggerated in order to explain the embodiment of the present invention, and the same reference numerals in the drawings refer to the same elements.

The deposition apparatus according to the embodiments of the present invention may be used as a laser chemical vapor deposition (LCVD) repair apparatus capable of depositing a metal thin film by a chemical vapor deposition method by irradiating a laser beam to a substrate provided in the atmosphere. Of course, the deposition apparatus according to the embodiments of the present invention may be used as a deposition apparatus for depositing various films on various processing materials.

Hereinafter, embodiments of the present invention will be described in detail with reference to a repair apparatus and a repair process.

1 is a schematic diagram illustrating a deposition apparatus according to embodiments of the present invention, FIG. 2 is a schematic diagram illustrating a supply unit according to a first embodiment of the present invention, and FIG. 3 is a supply unit according to a second embodiment of the present invention It is a schematic diagram showing wealth.

A deposition apparatus according to embodiments of the present invention will be described with reference to FIGS. 1 to 3 .

In the deposition apparatus according to embodiments of the present invention, a laser is irradiated to one surface of the processed object S through the chamber 200 and the chamber 200 capable of forming a deposition atmosphere on one surface of the processed object S. It includes a laser unit 300 and a supply unit 500 connected to the chamber unit 200 to be installed.

At this time, the supply unit 500 is connected to the chamber unit 200 , the source is filled therein, and the source supply units 500A and 500C capable of supplying the vaporized source to the chamber unit 200 , and the stabilizer is accommodated therein. and a stabilizer supply unit (500B, 570) installed to supply a stabilizer to the source supply unit (500A, 500C).

The deposition apparatus according to embodiments of the present invention may further include a support part 100 and an optical part 400 .

The processed object S may be a substrate in which various electronic devices are manufactured on one surface in progress or in which the process has been completed. The processed object S may be seated on the upper surface of the support 100 and may be provided in the atmosphere.

The source may include a metal source for thin film deposition. The metal source may include a cobalt source. Of course, the metal source may include a tungsten source. The type of the metal source may be various. The cobalt source may be vaporized at about 35°C, and the tungsten source may be vaporized at about 75°C.

The stabilizer serves to prevent deterioration of the sauce. The deterioration of the sauce means, for example, that the source changes from a solid powder state to a lump state as particles of the sauce agglomerate with each other. The stabilizer may remain in a liquid state at room temperature and may have a higher boiling point than a source such as a tungsten source. The stabilizer may include various kinds of hydrocarbon compounds such as hydrocarbons. Specifically, the stabilizer may include a hydrocarbon-based solvent. Of course, the stabilizer may include various hydrocarbon-based materials that can prevent deterioration of the source. For example, the stabilizer may include octane. Stabilizers may be volatile. Stabilizers can increase the amount of vaporization of the sauce.

The chamber part 200 may be disposed above the support part 100 . In this case, the chamber unit 2000 may be movable relative to the support unit 100 . At least one of the support part 100 and the chamber part 200 may be movably installed.

A processing hole (not shown) may be formed on one side of the chamber unit 200 . The processing hole may extend in the vertical direction. A window may be installed on the upper portion of the processing hole. The lower portion of the processing hole may be opened downward. The processing hole may receive a vaporized source from the source supply units 500A and 500C. The chamber unit 200 may supply the vaporized source to the upper surface of the processed object S through the processing hole. Accordingly, the vaporized source may be sprayed downward through the opening of the lower portion of the processing hole, and may form a deposition atmosphere on the upper surface of the processed object S. The deposition atmosphere means an atmosphere in which a vaporized source is predominantly present. A predetermined space in which the vapor deposition atmosphere is formed is referred to as a processing space. In this case, the processing space may be formed with a predetermined size between the processing hole and the processing object (S).

The laser unit 300 may irradiate the laser light onto the upper surface of the processed object S through the processing hole of the chamber unit 200 . The laser light may be irradiated to the upper surface of the processed object (S) through the window and the processing hole. The laser unit 300 may be installed above the chamber unit 200 .

The laser unit 300 may deposit a film by generating laser light and supplying thermal energy by irradiating laser light to a defect location on the upper surface of the processed object S. The configuration and method of the laser unit 300 may vary.

The optical unit 400 may be installed between the laser unit 300 and the chamber unit 300 . The optical unit 400 may guide the laser light oscillated by the laser unit 300 to the chamber unit 300 . The configuration and method of the optical unit 400 may vary.

below. A deposition apparatus according to a first embodiment of the present invention will be described in detail with reference to FIGS. 1 and 2 .

According to the first embodiment of the present invention, the source supply unit 500A is connected to the chamber unit 200 , the source is filled therein, and may supply the vaporized source to the chamber unit 200 .

The source supply unit 500A may include a source supply unit 510 connected to the chamber unit 200 and a carrier gas supply unit 520 connected to the source supply unit 510 .

The source supply 510 may include a source container 511 in which a source may be filled, and a source supply pipe 512 connecting the source container 511 and the chamber unit 200 .

The source container 511 may be filled with a solid powder state therein. At this time, the source may be specifically filled in the lower portion of the source container (511). The source filled in the lower portion of the source container 511 is referred to as a filling layer or a source layer. The source container 511 may be referred to as a canister or bubbler.

The source supply 510 may include heating means (not shown). The heating means may be thermally connected to the source vessel 511 . The heating means may include a heating wire. Of course, the heating means may vary. On the other hand, the source may be heated by using the temperature of the carrier gas.

The source container 511 may vaporize the source from a solid state to a gaseous state using heat generated by the heating means, and introduce the vaporized source into the source supply pipe 512 . The source container 511 may be provided with a predetermined space in which the vaporized source can flow.

The source supply pipe 512 may have an inlet connected to the source container 511 , and an outlet connected to a processing hole of the chamber unit 200 . In this case, specifically, the inlet of the source supply pipe 512 may be connected to the upper portion of the source container 511 .

Meanwhile, the source supply 510 may include a flow controller (not shown). The flow controller may be mounted on the source supply pipe 512 . In this case, the flow controller may include a mass flow meter.

The carrier gas supply 520 may include a carrier gas supply source 521 and a carrier gas supply pipe 522 . The carrier gas supply source 521 may have a carrier gas stored therein. The carrier gas may include an inert gas. The inert gas may be argon gas. Of course, the type of the carrier gas may be various. The carrier gas serves to stably maintain the flow of the vaporized source. The carrier gas supply 520 may further include a control valve (not shown).

The carrier gas supply pipe 522 may connect the carrier gas supply source 521 and the source container 511 . An inlet of the carrier gas supply pipe 522 may be mounted to the carrier gas supply source 521 . The outlet of the carrier gas supply pipe 522 may be mounted to pass through an upper portion of the source container 511 , and may extend to a lower portion of the source container 511 . The carrier gas supply pipe 522 may form a carrier gas supply path.

A control valve (not shown) may be mounted on the carrier gas supply pipe 522 . The carrier gas may be supplied from the carrier gas supply source 521 to the lower portion of the source container 511 by opening the control valve.

The carrier gas may pass through the filling layer and rise to the upper portion of the source container 511 , and may transport the vaporized source to the source supply pipe 512 while flowing into the source supply pipe 512 . The vaporized source and carrier gas may be supplied to the processing hole of the chamber unit 200 through the source supply pipe 512 .

When filling the sauce inside the source container 511, a predetermined amount of a stabilizer may be filled with the sauce. The stabilizer may permeate between the particles of the source to prevent deterioration of the source, and improve fluidity and vaporization efficiency of the source.

The stabilizer may be filled inside the source container 511 in a liquid state, and may be uniformly incorporated into the filling layer. In this case, the filling amount of the stabilizer may be determined according to the filling amount of the source. For example, the filling amount of the stabilizer may be appropriately determined for each weight of the sauce filled in the source container 511 .

The stabilizer can slowly flow down the bottom of the packed bed over time. Also, the stabilizer may gradually vaporize over time. At this time, the vaporized stabilizer may rise upward by the flow of the carrier gas and leave the filling layer, and may be mixed into the carrier gas and exit through the source supply pipe 512 .

If the vaporized stabilizer leaves the filling layer during the repair process or the thin film deposition process, the stabilizer may not maintain an appropriate filling amount according to the weight of the source in the filling layer, and thus the source may be deteriorated.

Therefore, in the first embodiment of the present invention, the stabilizer may be continuously or periodically added to the source by using the stabilizer supply unit 500B, and thus, the stabilizer may always maintain an appropriate amount of filling according to the weight of the source. That is, during the repair process, the ratio of the stabilizer to the source may be maintained. Accordingly, during the repair process, the physical properties of the source can be stably maintained and the source can be prevented from being deteriorated.

On the other hand, before the repair process, the stabilizer filled with the sauce inside the source container 511 is called an initial stabilizer, and the stabilizer additionally supplied from the stabilizer supply unit 500B to the source container 511 during the repair process is classified as an additional stabilizer. may refer to.

The stabilizer supply unit 500B may be connected to the source supply 510 and may be separated from the carrier gas supply path. Specifically, the stabilizer supply unit 500B may be connected to the source container 511 of the source supplier 510 . The stabilizer supply unit 500B may supply a stabilizer to the inside of the source container 511 , and may spray the stabilizer on the surface of the filling layer.

The stabilizer supply unit 500B may include a stabilizer supply unit 530 .

The stabilizer supply 530, the stabilizer container 531 in which the stabilizer is accommodated therein, the stabilizer container 531 and the source supplier 510 to supply the stabilizer to the source container 511 of the source supply 510 in a liquid state. It may include a stabilizer supply pipe 532 for connecting the.

The stabilizer container 531 may contain a liquid stabilizer therein. The stabilizer supply pipe 532 may include an inlet 532a positioned at a lower portion of the stabilizer container 531 and an outlet 532b connected to an upper portion of the source container 511 .

The inlet 532a of the stabilizer supply pipe 532 may be immersed in the stabilizer accommodated in the stabilizer container 531 . The outlet 532b of the stabilizer supply pipe 532 may be spaced apart from the surface of the filling layer. The stabilizer supply pipe 532 supplies the liquid stabilizer to the surface of the filled layer, thereby allowing the stabilizer to evenly permeate from the top to the bottom of the filling layer. That is, the stabilizer can be evenly mixed in the packed layer by utilizing the property of the stabilizer flowing down from the liquid state to the lower part of the packed layer. On the other hand, the outlet 532b of the stabilizer supply pipe 532 may be provided with a spray nozzle (not shown).

The stabilizer supply 530 may include at least one of a control valve (not shown) and a flow regulator (not shown). The control valve and the flow rate controller are mounted on the stabilizer supply pipe 532 to control whether the stabilizer is supplied and the flow rate.

The stabilizer supply unit 500B may include a pressure gas supply unit 540 . The pressure gas supply 540 serves to push the stabilizer accommodated in the stabilizer container 531 to the stabilizer supply pipe 532 .

The pressure gas supply 540 is a pressure vessel 541 in which the pressure gas is accommodated, and a pressure pipe connecting the pressure vessel 541 and the stabilizer vessel 531 to inject the pressure gas into the stabilizer vessel 531 . (542). The pressure gas supply 540 may include a valve (not shown). The valve may be mounted to the pressure tube 542 . The pressure gas may use the same kind of gas as the carrier gas.

By operating the valve, the pressure tube 542 may be periodically opened and closed, and the pressure gas may be periodically injected into the stabilizer container 531 . Accordingly, a predetermined amount of the stabilizer may be periodically discharged from the stabilizer container 531 to the stabilizer supply pipe 532 .

Meanwhile, the method of supplying the stabilizer to the source container 511 may be various other than the method using the pressure gas supplier 540 .

For example, by positioning the stabilizer container 531 higher than the height of the outlet 532b of the stabilizer supply pipe 532, and using the potential energy of the stabilizer, the stabilizer accommodated in the stabilizer container 531 is pushed to the stabilizer supply pipe 532. may be

below. A deposition apparatus according to a second embodiment of the present invention will be described in detail with reference to FIGS. 1 and 3 . The deposition apparatus according to the second embodiment of the present invention is similar to the above-described deposition apparatus according to the first embodiment of the present invention. Therefore, a deposition apparatus according to a second embodiment of the present invention will be described in detail below focusing on their differences.

According to the second embodiment of the present invention, the source supply unit 500C is connected to the chamber unit 200 , the source is filled therein, and may supply the vaporized source to the chamber unit 200 .

The source supply unit 500C may include a source supply unit 550 connected to the chamber unit 200 and a carrier gas supply unit 560 filled with a carrier gas therein.

In this case, the stabilizer supply unit 570 may be connected to the source supply 550 . In addition, the carrier gas supplier 560 may be connected to the stabilizer supply unit 570 .

The source supply 550 may include a source container 551 in which a source may be filled, and a source supply pipe 552 connecting the source container 551 and the chamber unit 200 . The source supply 550 may further include a support member 553 installed under the source container 551 .

The source container 551 may be filled with a solid powder state therein. In this case, the sauce may be loaded on the upper surface of the support member 553 . The support member 553 may be a porous plate that allows the vaporized stabilizer and carrier gas to pass therethrough while allowing the sauce to be loaded on the upper surface thereof.

The support member 553 may be installed, for example, in a horizontal direction to separate the lower portion of the source container 551 from the inside of the source container 551 , and may be supported on the inner circumferential surface of the source container 551 . The support member 553 may form a buffer space of a predetermined height under the source container 551 . A vaporized stabilizer and carrier gas may be injected into the buffer space. The vaporized stabilizer and carrier gas may pass through the support member 553 and may be supplied to the source layer. In this case, the vaporized stabilizer may flow from the bottom to the top of the source layer and may be supplied to the source layer.

The source supply 550 may include heating means (not shown). The heating means may be thermally connected to the source vessel 551 . The source container 551 may vaporize the source from a solid state to a gaseous state using heat generated by the heating means, and introduce the vaporized source into the source supply pipe 552 . The source supply pipe 552 may have an inlet connected to the source container 551 and an outlet connected to a processing hole of the chamber unit 200 . The inlet of the source supply pipe 552 may be connected to the upper portion of the source container 511 . The source supply 510 may include a flow controller (not shown). The flow controller may be mounted on the source supply pipe 512 .

The carrier gas supply 560 may include a carrier gas supply source 561 and a carrier gas supply pipe 562 . The carrier gas supply source 561 may have a carrier gas stored therein. The carrier gas supply 560 may further include a control valve (not shown).

The carrier gas supply pipe 562 may connect the carrier gas supply source 561 and the stabilizer container 571 of the stabilizer supply unit 570 . An inlet of the carrier gas supply pipe 562 may be mounted to the carrier gas supply source 561 . The outlet of the carrier gas supply pipe 562 may be mounted to the stabilizer container 571 . The carrier gas supply pipe 562 , the stabilizer container 571 , and the stabilizer transport pipe 572 to be described later may form a carrier gas supply path.

A control valve (not shown) may be mounted on the carrier gas supply pipe 562 . The control valve may be opened to supply carrier gas from the carrier gas source 561 to the stabilizer container 571 .

The carrier gas passes through the upper portion of the stabilizer container 511 and may transport the vaporized stabilizer to the stabilizer transfer pipe 572 . The vaporized stabilizer and carrier gas may be supplied to the buffer space of the source container 531 .

In the second embodiment of the present invention, the stabilizer vaporized to the source can be continuously or additionally added using the stabilizer supply unit 570, and the stabilizer always maintains an appropriate amount of filling according to the weight of the source in the source layer. can Accordingly, it is possible to prevent deterioration of the source.

The stabilizer supply unit 570 may be connected to the source supply unit 510 . In this case, the carrier gas supplier 560 may be connected to the stabilizer container 571 of the stabilizer supply unit 570 . The stabilizer supply unit 570 may connect the carrier gas supply 560 and the source supply 510 to each other. The carrier gas supply path may pass through the stabilizer supply unit 570 . Specifically, the carrier gas supply path may pass through the interior of the stabilizer container 571 and the stabilizer transfer pipe 572 .

The stabilizer supply unit 570 may supply a stabilizer vaporized to the lower portion of the source container 551 . The vaporized stabilizer supplied to the lower portion of the source container 551 may be supplied to the source layer from the lower portion to the upper portion.

Stabilizer supply unit 570, stabilizer container 571 in which the stabilizer is accommodated therein, so that the vaporized stabilizer can be transferred to the source container 551, stabilizer transport connecting the stabilizer container 571 and the source container 551 tube 572 .

The stabilizer supply unit 570 may include a heating means (not shown). The heating means may be in thermal connection with the stabilizer container 571 . The heating means may include a heating wire. Of course, the heating means may vary. The temperature of the stabilizer can also be raised using the temperature of the carrier gas.

The stabilizer container 571 may contain a stabilizer in a liquid state therein. The stabilizer may be vaporized inside the stabilizer container 571 . The stabilizer transport pipe 572 may include an inlet 572a positioned at the upper portion of the stabilizer container 571 and an outlet 532b positioned in the buffer space below the source container 551 .

The inlet 572a of the stabilizer transport pipe 572 may be spaced apart from the upper surface of the stabilizer accommodated in the stabilizer container 571 . The vaporized stabilizer may be easily introduced into the inlet 572a of the stabilizer delivery pipe 572 . The outlet 532b of the stabilizer transport pipe 532 may communicate with the buffer space. The stabilizer transport pipe 532 supplies the vaporized stabilizer to the lower portion of the source layer, thereby allowing the vaporized stabilizer to evenly permeate from the lower portion to the upper portion of the filling layer. That is, the stabilizer can be evenly mixed in the source layer by utilizing the property that the vaporized stabilizer rises to the top of the source layer in a gaseous state.

The stabilizer supply unit 570 may include at least one of a control valve (not shown) and a flow controller (not shown). The control valve and the flow regulator may be mounted on the stabilizer transfer pipe 572 to adjust the flow rate of the vaporized stabilizer and carrier gas. A predetermined amount of vaporized stabilizer may be continuously discharged from the stabilizer container 571 to the stabilizer supply pipe 572 .

The stabilizer container 571 may vaporize the stabilizer from a liquid to a gas using heat generated by the heating means, and introduce the vaporized stabilizer into the stabilizer transfer pipe 572 . At this time, the carrier gas serves to introduce the vaporized stabilizer into the stabilizer transfer pipe 572 . For example, the carrier gas serves to push the vaporized stabilizer to the stabilizer transfer pipe 572 .

Hereinafter, a deposition method according to embodiments of the present invention will be described in detail.

In the deposition method according to the embodiments of the present invention, the process of preparing the treated material (S), the process of vaporizing the source, the process of supplying the vaporized source to one surface of the treated material (S), and irradiating a laser to the treated material ( S) includes a process of forming a film on one surface, a process of vaporizing the source, a process of supplying a stabilizer to the sauce, and a process of preventing deterioration of the sauce.

In this case, the source may include a metal source, and the stabilizer may include a hydrocarbon compound.

A processed object S is provided. The processed object S may be seated on the support 100 . And the chamber unit 200 may be positioned on the upper side of the processed object (S).

Thereafter, the sauce is vaporized. By using at least one of the heating means and the temperature of the carrier gas provided in the source supply units 500A and 500C, heat may be applied to the source and the source may be vaporized.

Thereafter, the vaporized source is supplied to one surface of the treated material (S). At this time, the vaporized source is conveyed as a carrier gas. That is, the source vaporized by the carrier gas may be pushed through the source supply pipes 512 and 552 to move to the processing hole of the chamber unit 200 , and the vaporized source may be supplied to one surface of the processed object S through the processing hole.

Thereafter, a film is formed on one surface of the treated object (S) by irradiating the laser. Through this process, it is possible to repair the defect formed on one surface of the processed object (S).

At this time, during the process of vaporizing the source, a stabilizer is supplied to the source.

Specifically, the stabilizer may be repeatedly supplied to the source separately from the carrier gas. Alternatively, the stabilizer may be continuously supplied to the source through the carrier gas supply path.

Separately from the carrier gas, when the stabilizer is repeatedly supplied to the source, the stabilizer may be supplied to the source in a liquid state by using a pressure gas. Specifically, the pressure gas may be injected into the stabilizer container 531 to discharge the stabilizer to the stabilizer supply pipe 532 , and the stabilizer may be sprayed on the surface of the filling layer from the upper portion of the source container 511 .

When the stabilizer is continuously supplied to the source through the carrier gas supply path, the stabilizer contained in the stabilizer container 571 is vaporized, and the stabilizer vaporized by passing the carrier gas inside the stabilizer container 571 is a carrier gas It is transported to, and it is possible to supply the stabilizer vaporized to the source through the stabilizer transfer pipe (572). In this case, the carrier gas may also be supplied to the source.

Thereafter, deterioration of the sauce is prevented. That is, as described above, the stabilizer is continuously or periodically added to the source to maintain the ratio of the stabilizer to the source during the repair process. By this process, during the repair process, the physical properties of the source can be stably maintained and the source can be prevented from being deteriorated.

The above embodiments of the present invention are intended to illustrate the present invention, not to limit the present invention. It should be noted that the configurations and methods disclosed in the above embodiments of the present invention may be combined and modified in various forms by combining or intersecting with each other, and modifications thereof may also be considered as the scope of the present invention. That is, the present invention will be embodied in a variety of different forms within the scope of the claims and equivalents thereof, and those skilled in the art to which the present invention pertains can implement various embodiments within the scope of the technical spirit of the present invention. will be able to understand

100: support
200: chamber unit
500A: source supply
510: source supplier
520: carrier gas supply
500B: stabilizer supply
530: stabilizer feeder
540: pressure gas supply
500C: source supply
550: source supplier
560: carrier gas supply
570: stabilizer supply unit

Claims (15)

a chamber unit capable of forming a deposition atmosphere on one surface of the processed object;
a laser unit installed to irradiate a laser onto one surface of the processed object through the chamber unit; and
a source supply unit connected to the chamber unit, filled with a source therein, and capable of supplying a vaporized source to the chamber unit;
A stabilizer supply unit is accommodated therein, the stabilizer supply unit is installed so as to supply the stabilizer to the source supply unit;
The source supply unit includes a source supply connected to the chamber unit and a carrier gas supply connected to the source supply,
The stabilizer supply unit is connected to the source supply unit and is separate from the carrier gas supply path. delete a chamber unit capable of forming a deposition atmosphere on one surface of the processed object;
a laser unit installed to irradiate a laser onto one surface of the processed object through the chamber unit; and
a source supply unit connected to the chamber unit, filled with a source therein, and capable of supplying a vaporized source to the chamber unit;
A stabilizer supply unit is accommodated therein, the stabilizer supply unit is installed so as to supply the stabilizer to the source supply unit;
The source supply unit includes a source supply connected to the chamber unit and a carrier gas supply in which a carrier gas is filled,
The stabilizer supply unit is connected to the source supply,
The carrier gas supply unit is connected to the stabilizer supply unit, and a carrier gas supply path passes through the stabilizer supply unit. The method according to claim 1,
The stabilizer supply unit,
a stabilizer container in which the stabilizer is accommodated;
and a stabilizer supply pipe connecting the stabilizer container and the source supplier to supply the stabilizer to the source supplier in a liquid state. 5. The method according to claim 4,
The stabilizer supply unit,
a pressure vessel containing a pressure gas therein;
and a pressure tube connecting the pressure vessel and the stabilizer vessel to inject the pressure gas into the stabilizer vessel. 5. The method according to claim 4,
The stabilizer supply pipe is a deposition apparatus having an inlet that can be immersed in the stabilizer accommodated in the stabilizer container and an outlet that can be spaced apart from the source filled in the source supply. 4. The method according to claim 3,
The stabilizer supply unit,
a stabilizer container in which the stabilizer is accommodated;
Deposition apparatus comprising a; stabilizer transfer pipe connecting the stabilizer container and the source supplier to transfer the vaporized stabilizer to the source supplier. 8. The method of claim 7,
the stabilizer container is connected to the carrier gas supply;
The carrier gas supply path passes through the inside of the stabilizer container and the stabilizer transport pipe. 8. The method of claim 7,
The stabilizer transport pipe is a deposition apparatus having an inlet that can be spaced apart from the stabilizer accommodated in the stabilizer container and an outlet that can be opened from a lower portion of the source supply. the process of preparing the treatment;
the process of vaporizing the sauce;
The process of supplying a vaporized source to one surface of the treated object;
forming a film on one surface of the processed object by irradiating a laser;
During the process of vaporizing the source, the step of supplying a stabilizer to the source;
a process of preventing deterioration of the source; including,
In the process of supplying the vaporized source to one surface of the processed object, the process of transporting the vaporized source as a carrier gas; including,
The process of supplying the stabilizer,
and a process of repeatedly supplying the stabilizer to the source separately from the carrier gas. delete the process of preparing the treatment;
the process of vaporizing the sauce;
The process of supplying a vaporized source to one surface of the treated object;
forming a film on one surface of the processed object by irradiating a laser;
During the process of vaporizing the source, the step of supplying a stabilizer to the source;
a process of preventing deterioration of the source; including,
In the process of supplying the vaporized source to one surface of the processed object, the process of transporting the vaporized source as a carrier gas; including,
The process of supplying the stabilizer,
and continuously supplying the stabilizer to the source through a carrier gas supply path. 11. The method of claim 10,
The process of repeatedly supplying the stabilizer is,
and supplying the stabilizer in a liquid state to the source using a pressure gas. 13. The method of claim 12,
The process of continuously supplying the stabilizer is,
vaporizing the stabilizer;
transporting the vaporized stabilizer to the carrier gas;
and supplying the vaporized stabilizer to the source. 11. The method of claim 10,
The source comprises a metal source,
The deposition method wherein the stabilizer comprises a hydrocarbon compound.

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