JP2013211137A6 - Vacuum deposition method and apparatus - Google Patents

Abstract

An object of the present invention is to provide a vacuum deposition apparatus and method for an organic EL device with improved utilization efficiency of a deposition material in vacuum deposition.
In a vacuum evaporation apparatus for an organic EL device, a water-cooled cooling plate is provided between the heater and the shadow mask in order to prevent radiant heat from the heater of the evaporation source from directly overheating the shadow mask. This makes it possible to reduce the distance between the evaporation source and the shadow mask as compared with the prior art, and increases the proportion of the evaporated organic EL material used for film formation on the substrate, thereby improving the efficiency of using the evaporation material. Increased.
[Selection] Figure 5A

Description

  The present invention relates to a method and apparatus for forming a vacuum deposition film, and more particularly to a vacuum deposition method and apparatus suitable for forming a thin film uniformly on a large substrate by improving the use efficiency of a deposition material. .

  An organic EL element used in an organic EL display device or a lighting device has a structure in which an organic layer made of an organic material is sandwiched between a pair of electrodes of an anode and a cathode from above and below, and holes are applied from the anode side by applying a voltage to the electrodes. However, electrons are injected from the cathode side into the organic layer and recombined to emit light.

  This organic layer has a structure in which a multilayer film including a hole injection layer, a hole transport layer, a light emitting layer, and a charge injection layer is laminated. There are materials using a high molecular material and a low molecular material as a material for forming the organic layer. Among these, when using a low molecular weight material, an organic thin film is formed using a vacuum evaporation apparatus.

  The light emission characteristics of the organic EL device are greatly affected by the film thickness of the organic layer. On the other hand, the substrate on which the organic thin film is formed has become larger year by year. Therefore, when using a vacuum evaporation apparatus, it is necessary to control the film thickness of an organic thin film pattern formed on a large substrate through a mask with high accuracy. As a configuration for forming a thin film on a large substrate by vacuum deposition, Patent Document 1 (Japanese Patent Laid-Open No. 2004-158337) discloses a deposition mask for a crucible as an evaporation source in a vacuum deposition apparatus having a line-type evaporation source. Is applied to the surface opposite to the crucible material to reduce the influence of radiant heat from the crucible to the vapor deposition mask. Patent Document 2 (Japanese Patent Laid-Open No. 2008-169456) discloses a vacuum vapor deposition apparatus that forms a thin film on a substrate using a crucible provided with a temperature control mechanism having a heating element and a cooling body.

  Furthermore, the deposition mask is heated and expanded by high-temperature radiant heat from the crucible during vapor deposition, resulting in displacement of the pattern formed on the substrate. Patent Document 3 (Japanese Patent Application Laid-Open No. 2007-186787) is a method for preventing this. No.) and Patent Document 4 (Japanese Patent Laid-Open No. 2007-177319) disclose that a heat insulating mechanism is provided between the crucible and the vapor deposition mask.

  Further, in Patent Document 5 (Japanese Patent Laid-Open No. 11-274081), in the electron beam evaporation method, the opening and a part of the upper surface of the secondary electron adsorption plate above the evaporation source are cooled by a water-cooled gun shield. Is disclosed.

JP 2004-158337 A JP 2008-169456 A JP 2007-186787 A JP 2007-177319 A Japanese Patent Laid-Open No. 11-274081

  As one of the means to reduce the manufacturing cost of organic EL devices, the material usage efficiency of the expensive material of the organic layer film formed by vacuum deposition (of the materials supplied to the vacuum deposition equipment, used for the organic layer of the organic EL device) Improvement rate).

  In order to improve the material usage efficiency of the organic layer formed by vacuum deposition, the distance between the evaporation source and the substrate is made smaller, and the amount of deposition material generated from the evaporation source adheres to the periphery of the vacuum deposition apparatus. It is effective.

  However, when an organic EL device is formed by vacuum deposition, a deposition mask is placed on the surface of the substrate and a pattern formed on the deposition mask is transferred onto the substrate. In order to perform over a multilayer film including a hole transport layer, a light emitting layer, and a charge injection layer, it is necessary to prevent pattern displacement from occurring in the vapor deposition mask when each layer is formed.

  On the other hand, the evaporation source is heated to a high temperature of several hundred degrees in order to vaporize the vapor deposition material. Therefore, in order to prevent thermal deformation of the deposition mask due to the radiant heat from the heated evaporation source, the interval between the evaporation source and the deposition mask is set to be large or the radiant heat from the evaporation source is evaporated. It is necessary to provide a configuration for shielding so as not to reach the mask directly.

  Patent Document 1 discloses a configuration in which an organic thin film is formed on a glass substrate by moving the glass substrate in a direction perpendicular to the direction in which the nozzles are arranged on an evaporation source provided with a plurality of nozzles arranged in a line. It describes that the surface of the crucible facing the vapor deposition mask is subjected to metal plating with a material having lower thermal radiation efficiency than the material of the crucible to reduce the influence of radiant heat from the crucible to the vapor deposition mask.

  However, in the configuration described in Patent Document 1, since the surface facing the vapor deposition mask of the crucible is not actively cooled, the temperature of the vapor deposition mask gradually rises by repeating the vapor deposition. In addition, the distance between the crucible and the vapor deposition mask is inevitably increased to some extent, which is insufficient in terms of increasing the utilization efficiency of the vapor deposition material.

  Patent Document 2 describes that a heating element and a cooling body are provided around the crucible to control the temperature of the evaporation source, but it is positive that the vapor deposition mask is heated by the radiant heat from the crucible. There is no description on prevention.

  Furthermore, Patent Documents 3 and 4 describe that a radiation blocking body having a heat insulating function is provided on the upper part of the crucible in order to suppress transmission of radiant heat from the crucible and the heater case to the vapor deposition mask. And the cooling plate which comprises this radiation blocker is connected to the cooling device provided with the water cooling mechanism. However, in Cited Document 3, as shown in FIGS. 13 and 14, a sensor (film thickness monitor) for measuring the supply amount of the vapor deposition material per unit time is installed between the radiation blocker provided in the crucible and the vapor deposition mask. By simply providing a radiation blocking body in the crucible, the radiation heat from the crucible is cut off and the distance between the crucible and the vapor deposition mask is made as small as possible to improve the material use efficiency of the expensive vapor deposition material. That is not described. Patent Document 4 discloses a configuration in which a substrate is prevented from being copied by heat from a crucible with a heat insulating plate, but the temperature of the vapor deposition mask gradually rises by repeated vapor deposition. This is not taken into consideration, and the distance between the crucible and the vapor deposition mask must be separated to some extent.

  In the invention disclosed in Patent Document 5, the vapor deposition material is evaporated from a relatively large opening provided in the upper part of a crucible as a heating source by a method of superheating with an electron beam. When the shutter of the layer is opened, the radiant heat generated from the evaporation source itself is directly incident on the substrate, and the radiant heat generated from the evaporation source during deposition is prevented from directly entering the substrate, thereby There is no consideration for improving the efficiency of the curtain by reducing the interval.

  An object of the present invention is to provide a vacuum deposition method and apparatus capable of solving the above-described problems of the prior art and improving the material use efficiency of an expensive material constituting an organic layer film.

  In order to achieve the above object, in the present invention, in a vacuum deposition apparatus for depositing a vapor deposition material vaporized by heating on a panel-like substrate in a vacuum evacuated chamber, a holding means for holding the substrate, and a vapor deposition material Move at least one of an evaporation source having a shape that is long in one direction that is emitted from a plurality of nozzles that are vaporized and disposed on a line, and a holding means that holds the evaporation source or the substrate in a direction perpendicular to the long direction of the evaporation source And a detecting means for detecting a release rate of the vapor deposition material from the evaporation source. The evaporation source heats the evaporation material stored in the storage section and the evaporation material storage section storing the evaporation material. A heating unit that is located between the heating unit and the holding unit, and a cooling unit that includes a cooling water passage inside the heating unit that blocks radiation heat generated from the heating unit and directed toward the substrate. .

  Further, in the present invention, a plurality of vacuum vapor deposition portions for forming a thin film by vapor deposition on the surface of the substrate to be processed whose surface is covered with a shadow mask in a processing chamber that is evacuated and maintained in a vacuum state are maintained in a vacuum. In a vacuum deposition apparatus having a processing substrate transfer unit that transfers a processing substrate between a plurality of vacuum deposition units in an atmosphere, at least one of the plurality of vacuum deposition units includes a plurality of vacuum deposition units arranged on a line An evaporation source for releasing the material evaporated through the nozzle into the processing chamber, a substrate holding means for holding the substrate to be processed in a state of being covered with a shadow mask, and a plurality of nozzles arranged in a line on the line. Evaporation source driving means for scanning along a substrate to be processed held in a state of being covered with a shadow mask by a substrate holding means in a direction perpendicular to the substrate, and the evaporation source contains an evaporation material. An evaporant storage unit, a heating unit that heats the evaporating material stored in the storage unit, and a cooling water that is located between the heating unit and the holding means and that blocks radiation heat generated from the heating unit and directed toward the substrate. And a cooling part having a passage.

  Furthermore, in the present invention, the shadow chamber is covered with a vacuum chamber provided with a vacuum exhaust means, an evaporation source for releasing the evaporated material into the vacuum chamber through a plurality of nozzles arranged on the line, and a substrate to be processed. Substrate holding means that holds the substrate in a state in which the evaporation source is driven, and an evaporation source drive means that scans the evaporation source in a direction perpendicular to the arrangement direction of the plurality of nozzles arranged on the line along the substrate to be processed held by the substrate holding means. Monitor means for monitoring the release state of the material released from the evaporation source by being moved together with the evaporation source by the evaporation source driving means, the evaporation source containing an evaporation material storage section for storing the evaporation material, and storage A heating unit that heats the evaporation material stored in the unit, and a cooling unit that is located between the heating unit and the holding unit and that has a cooling water passage inside that blocks radiation heat generated from the heating unit and directed toward the substrate It is characterized by having

  Furthermore, in the present invention, the first thin film is formed by vapor deposition on the surface of the substrate to be processed in the first processing chamber which is evacuated and maintained in a vacuum state, and the thin film is formed by vapor deposition in the first processing chamber. In the vacuum deposition method, the processed substrate is delivered to the second processing chamber in an atmosphere maintained in a vacuum, and a second thin film is formed by vapor deposition on the surface of the processed substrate in the second processing chamber. In at least one processing chamber of the processing chamber or the second processing chamber, the substrate to be processed is held by the holding means with the surface covered with the shadow mask, and the vapor deposition material vaporized by the evaporation source is arranged on the line The water-cooled cooling unit disposed between the plurality of nozzles of the evaporation source and the shadow mask is discharged from the evaporation source while blocking the radiation heat toward the shadow mask. Table of treated substrates It was to form a thin film on the surface to be treated of the substrate covered with the shadow mask by scanning the evaporation source along.

  According to the present invention, it is possible to improve the material use efficiency of an expensive material constituting the organic layer film in vacuum deposition, and to reduce the manufacturing cost of the organic EL device.

1 is a block diagram illustrating a schematic configuration of an organic EL device manufacturing apparatus according to a first embodiment of the present invention. 1 is a perspective view of a transfer chamber and a processing chamber of an organic EL device manufacturing apparatus according to a first embodiment of the present invention. It is a perspective view of a shadow mask. It is a side view of the processing chamber in the 1st example of the present invention. It is a front view from the AA direction of the processing chamber in the 1st example of the present invention. It is a front view which shows the general positional relationship of the monitor means which monitors the evaporation amount from each nozzle of the evaporation source in 1st Example of this invention, an evaporation source, and a shutter. It is sectional drawing of the side surface which shows the positional relationship of the evaporation source in 1st Example of this invention, a film thickness monitor, a shadow mask, and a board | substrate. It is sectional drawing of the side surface which shows the positional relationship of the evaporation source in a prior art, a film thickness monitor, a shadow mask, and a board | substrate. It is a flowchart explaining operation | movement of the vapor deposition process of the board | substrate in the 2nd Example of this invention. It is a block diagram which shows the schematic structure of the organic EL device manufacturing apparatus in the 2nd Example of this invention. It is a perspective view of the conveyance chamber and process chamber of the organic EL device manufacturing apparatus in the 2nd Example of this invention. It is a front view which shows the schematic positional relationship of the monitor means, the evaporation source, and shutter which monitor the evaporation amount from each nozzle of an evaporation source, a board | substrate, and an evaporation source in 2nd Example of this invention. It is a flowchart explaining operation | movement of the vapor deposition process of the board | substrate in the 2nd Example of this invention.

An apparatus for manufacturing an organic EL device according to the present invention will be described. Organic EL device manufacturing equipment vacuums thin film layers of various materials such as a hole injection layer, a hole transport layer, and a light emitting layer (organic film layer) on the anode, and an electron injection layer and a transport layer on the cathode. It is an apparatus that forms multiple layers by vapor deposition. An organic EL device manufacturing apparatus according to the present invention includes an evaporation source that evaporates a material through a plurality of nozzles arranged on a line in a vacuum deposition unit, and a gap between the evaporation source and a substrate by blocking radiant heat from the evaporation source. The main feature is that it is possible to increase the efficiency of vapor deposition material and improve the throughput of the vapor deposition process while increasing the efficiency of vapor deposition on the substrate by narrowing.
Embodiments of the present invention will be described below with reference to the drawings.

  FIG. 1 shows an example of the configuration of an organic EL device manufacturing apparatus according to the first embodiment. The organic EL device manufacturing apparatus 100 according to the present embodiment is installed in a substrate carrying-in unit 4a for carrying in a substrate 6 to be processed, three processing units 1A to 1C for processing the loaded substrate 6, and each processing unit. There are provided transfer arms 5a-5c, substrate delivery chambers 4b-d installed between adjacent processing units (1A and 1B, 1B and 1C) and between the processing unit 1C and the next process (sealing process). It is configured. Each processing unit 1A-1C has four processing chambers 1a-1 to 1a-4, 1b-1 to 1b-4, 1c-1 to 1c-4, and transfer chambers 2a to 2c provided with transfer arms 5a to 5c, respectively. 2c. The processing chambers 1a-1 to 1a-4, 1b-1 to 1b-4, 1c-1 to 1c-4 perform the same processing for each of the processing units 1A to 1C. Also, each of the transfer chambers 2a to 2c and each of the processing chambers 1a-1 to 1a-4, 1b-1 to 1b-4, 1c-1 to 1c-4, the substrate carry-in portion 4a, and the substrate delivery chamber portions 4b to 4d. The space is partitioned by gate valves 10a-1 to 10a-6, 10b-1 to 10b-6, and 10c-1 to 10c-6, and each space is individually evacuated by a vacuum exhaust means (not shown). The substrate 6 carried in from the carry-in port 4a-1 of the substrate carry-in portion 4a is maintained in a vacuum without being exposed to the atmosphere until just before being discharged from the discharge port 4d-1 of the substrate transfer portion 4d. It is transported in the atmosphere.

  Next, a processing flow until the substrate 6 carried in from the substrate carry-in unit 4a in the configuration shown in FIG. 1 is processed and discharged from the substrate delivery unit 4d will be described.

  First, the substrate carry-in unit 4a receives the substrate 6 from a substrate supply unit (not shown) via the carry-in port 4a-1. Next, the inlet 4a-1 is closed, the inside of the substrate carrying-in portion 4a is evacuated by a vacuum evacuation unit (not shown), the gate valve 10a-1 is opened, and the inside is opened by a vacuum evacuation unit (not shown). The substrate 6 is carried into the processing unit 1A by the transfer arm 5a installed in the transfer chamber 2a of the processing unit 1A that has been evacuated. Next, after the gate valve 10a-1 is closed, inside the processing unit 1A, the transfer arm 5a is one of the processing chambers 1a-1 to 1a-4 in which the substrate 6 is not contained, for example, processing. The gate valve 10a-2 is opened to supply the substrate 6 to the chamber 1a-1.

  In the processing chamber 1a-1 to which the substrate 6 is supplied, after the transfer arm 5a is retracted, the gate valve 10a-2 is closed and the inside is evacuated to a predetermined pressure by a vacuum evacuation means (not shown), and then the vacuum is released. A thin film is formed on the substrate 6 by vapor deposition.

  Then, after forming a thin film on the substrate 6 by performing vacuum deposition for a predetermined time, the vacuum deposition on the substrate is stopped, the gate valve 10a-2 is opened, and the substrate 6 is moved from the processing chamber 1a-1 by the transfer arm 5a. The substrate is taken out into the transfer chamber 2a, the gate valve 10a-2 is closed, the gate valve 10a-4 is opened, and the substrate 6 is transferred to the substrate transfer portion 4b. After the substrate 6 is transferred to the substrate transfer section 4b and the transfer arm 5a is retracted to the transfer chamber 2a, the gate valve 10a-4 is closed, and then the gate valve 10b-1 is opened and the transfer arm 5b installed in the transfer chamber 2b. The substrate 6 delivered to the substrate delivery unit 4b is carried into the transfer chamber 2b. Thereafter, the same processing as that in the processing unit 1A is performed, and then the substrate 6 is carried into the processing unit 1C to perform the same processing. The substrate 6 processed by the processing unit 1C is transferred from the substrate transfer section 4d to a processing apparatus for the next process (not shown).

  Next, the transfer of the substrate 6 between the transfer arm and the processing chamber will be described with reference to FIG. 2 taking the transfer arm 5a and the processing chamber 1a-1 of the processing unit 1A as an example.

  Although the configuration of the processing chamber differs depending on the processing content, in the processing chamber 1a-1, a case where an EL layer is formed by evaporating a luminescent material will be described. The transport arm 5a has an arm 51 having a structure that can be swung left and right, and a comb-like hand 52 that mounts and transports the substrate 6 is mounted on the tip of the arm 51a. Further, the transfer arm 5a has a base 53 fixed inside the transfer chamber 2a.

On the other hand, on the side of the processing chamber 1a-1, a comb-like hand 94 that receives the substrate 6 placed on the comb-like hand 52 of the transfer arm 5a, and the substrate 6 received by the comb-like hand 94 are swung. Substrate turning means 91 driven by a motor 93 that is brought upright and moved to the substrate holding means 82 and brought into close contact with the shadow mask 81 is provided. When vacuum deposition is performed, the inside of the processing chamber 1a-1 is maintained in a high vacuum state of about 10 ⁻³ to 10 ⁻⁴ Pa by a vacuum exhaust unit (not shown).

  Although omitted in FIG. 2, the transfer chamber 2a in which the transfer arm 5a is installed and the processing chamber 1a-1 are partitioned by a gate valve 10a-2 that can be opened and closed. The transfer of the substrate 6 between the transfer chamber 2a and the processing chamber 1a-1 is performed while being evacuated to a vacuum.

  FIG. 3 shows the configuration of the shadow mask 81. The shadow mask 81 includes a mask 81M and a frame 81F. An alignment driving unit fixed to the substrate holding unit 82 detects the position of the alignment mark 84 formed on the substrate 6 and the position of the window 85 (see FIG. 2) of the shadow mask 81 by an alignment mark detection unit (not shown). At 83, the window 85 formed on the mask 81M is aligned with the alignment mark 84 formed on the substrate 6.

  FIG. 4A is a diagram illustrating an internal configuration of the processing chamber 1a-1. Inside the processing chamber 1 a-1, there are an evaporation source unit 71, a drive unit 72 that moves the evaporation source 71 along the substrate 6, a film thickness monitor 20 that monitors the evaporation amount of the vapor deposition material from the evaporation source 71, and the substrate 6. Is held in contact with the shadow mask 81. In FIG. 4A, means for holding the shadow mask 81 is omitted. FIG. 4B is a view as seen from the direction of arrow B in FIG.

  The drive unit 72 moves the evaporation source unit 71 in the vertical direction along the pair of guide shafts 76, a drive motor 72M provided on the atmosphere side, a ball screw 72P rotated by the motor 72M, and rotated. A nut 72K that is fixed to the source unit 71 and moves the evaporation source unit 71 up and down by the rotation of the ball screw 72P and a guide guide 72G that guides the traveling of the evaporation source unit 71 on the pair of guide shafts 76 when moving up and down. The pair of guide shafts 76 are supported at both ends by a pair of support plates 78. Also, shutter plates 74 and 75 are provided in the vicinity of the upper and lower ends of the pair of guide shafts 76 for preventing the vapor deposition material released from the evaporation source 71 from diffusing into the processing chamber 1a-1. It has been. Furthermore, a monitor head 41 for monitoring the vapor deposition rate of the vapor deposition material released from the evaporation source unit 71 on the substrate is fixed to the evaporation source unit 71 by a support member 42.

  A detailed configuration of the evaporation source unit 71 will be described with reference to FIG. 5A with reference to FIG. First, in the configuration shown in FIG. 5A, the evaporation source section 71 has an opening section 71a for releasing the evaporation material evaporated from the evaporation source (crucible) 71a, the heater 71H, and the evaporation source 71a into the processing chamber 1a-1. -3 to cover the periphery of the vapor deposition material and prevent the vapor deposition material from adhering to the inside of the processing chamber 1a-1, the cover 71c, the reflector 71r that blocks the radiation heat from the evaporation source 71a through the cover 71c, and the reflector 71r diverge. A cooling water flow path 71q is formed inside by a water-cooled cooling plate 71w that cuts off radiant heat, a temperature sensor 71s that monitors the temperature inside the evaporation source 71a, and an evaporation source 71a that holds a nut 72K. And a guide block 71g connected to the guide guide 72G.

  The evaporation source 71a stores the vapor deposition material 71Z in the space 71a, and heats the stored vapor deposition material 71Z with the heater 71H from the outside to vaporize it. The vaporized vapor deposition material is discharged into the processing chamber 1a-1 through the opening 71a-3. The front of the opening 71a-3 is covered with a cover 71c heated by a heater 71H, and the vapor deposition material discharged from the opening 71a-3 adheres around the opening 71a-3 and solidifies. To prevent.

  Further, since the evaporation source 71a is heated to several hundred degrees by the heater 71H, the metal mask 81M of the shadow mask 81 that covers the surface of the glass substrate 6 is thermally expanded by the radiant heat from the evaporation source 71a, and the thermal expansion. Due to the difference in rate, there is a risk of causing a displacement between the pattern formed on the metal mask 81M and the pattern formed on the glass substrate 6. Since the pattern is formed on the glass substrate 6 in multiple layers, if a positional shift occurs between the layers, a defect is caused.

  Therefore, in order to prevent the positional deviation between the layers from occurring, the positional relationship between the pattern of the shadow mask 81 aligned before the vapor deposition and the pattern formed on the substrate 6 must be prevented during the vapor deposition. I must.

  In order to prevent the difference in thermal expansion between the metal mask 81M of the shadow mask 81 and the substrate 6 that causes this displacement, the mask 81M is prevented from being heated by the radiant heat from the evaporation source 71a. However, as described in Patent Documents 3 and 4, conventionally, as shown in FIG. 5B, only the reflector 71r ′ attached to the tip of the cover 71c ′ is used. However, since the reflector 71r 'has no means for actively preventing the temperature from rising, if the deposition is performed for a long time, the temperature of the reflector 71r' itself gradually increases due to the radiant heat from the evaporation source 71a. As a countermeasure, in order to prevent the mask 81M from being heated by radiant heat from the reflector 71r ′, the distance between the reflector 71r ′ and the mask 81M, that is, the distance between the evaporation source 71a and the mask 81M is sufficiently separated (for example, 100 mm or more). I had to leave.

  On the other hand, in the present invention, as shown in FIG. 5A, a water-cooled cooling plate 71w is further provided between the reflector 71r and the mask 81, and is provided outside the processing chamber 1a-1 (not shown). The mask 81 is prevented from being heated by the radiant heat from the reflector 71r by circulating the cooling water cooled by the cooling unit or the low-temperature tap water through the inside of the pipe 71g in the cooling plate 71W. That is, by providing the water-cooled cooling plate 71w between the reflector 71r and the mask 81, the radiant heat from the reflector 71r is blocked by the water-cooled cooling plate 71w, and the radiant heat from the reflector 71r incident on the water-cooled cooling plate 71w. Since the heat energy generated by is discharged to the outside of the processing chamber 1a-1 by the cooling water, the surface temperature on the mask 81 side of the water-cooled cooling plate 71w varies depending on the flow rate of the cooling water, but is maintained at a relatively low temperature. It becomes possible to do.

  Thereby, the surface temperature of the water-cooled cooling plate 71w can be controlled to be much lower than the surface temperature of the reflector 71r, and is formed on the metal mask 81 by the radiant heat emitted from the water-cooled cooling plate 71w. Generation of misalignment between the formed pattern and the pattern formed on the glass substrate 6 can be prevented. As a result, the distance between the evaporation source 71a and the substrate 6 is limited by the thickness of the frame 81F of the shadow mask 81 and the dimension of the support member 42 of the monitor head 41 that moves along the substrate 6 together with the evaporation source 71a ( For example, it became possible to narrow down to 50 mm). Further, by previously obtaining the relationship between the detection value of the film thickness monitor 20 and the film formation amount on the substrate 6, in the configuration shown in FIG. 5A, a part of the film thickness monitor 20 is a water-cooled cooling plate 71w. The amount of film formation on the substrate 6 can be estimated even if the amount of evaporation from the evaporation source 71a is monitored by disposing it behind the screen, and the distance between the evaporation source 71a and the substrate 6 can be further reduced. become.

  As a result, the rate at which the vapor deposition material released from the evaporation source 71a into the processing chamber 1a-1 contributes to the actual film formation, that is, the utilization efficiency of the material can be increased, and the expensive vapor deposition material can be used effectively. It became so. Further, since the amount of the vapor deposition material adhering to the inside of the processing chamber 1a-1 is reduced by increasing the material utilization efficiency, the progress of dirt inside the processing chamber 1a-1 is delayed, and the processing chamber 1a- The interval of cleaning inside 1 can be extended, and the operating rate of the apparatus can be increased. Further, by narrowing the distance between the evaporation source 71a and the substrate 6, the film formation rate is increased and the throughput can be improved.

  In the present embodiment, the structure in which the reflector 71r is provided between the evaporation source 71a and the water-cooled cooling plate 71w has been described. However, if the cooling performance of the water-cooled cooling plate 71w is sufficient, the reflector 71r is installed. It may be deleted.

  In such a configuration, as shown in FIG. 4C, the evaporation source unit 71 descends from the standby position WSu1 at the ascending end before starting vacuum deposition, and the shutter 75 in which the nozzle 73 is fixed to the processing chamber 1a-1. It stops once at the part WSu2 deviated from. In this state, the film thickness monitor 20 fixed to the support body 25 is driven by driving the support body 25 that is guided and moved by the horizontal guide 21 supported by the support blocks 22 and 23 with the drive unit 24. Are moved (scanned) at a constant speed along the nozzles 73a to 73n of the plurality of evaporation sources 71a of the evaporation source section 71 arranged in a line, and the evaporation amount is monitored. Send to department.

  The film thickness monitor 20 detects a film forming rate based on a frequency change corresponding to the amount of film forming material deposited on the crystal resonator. The detection surface 28 of the film thickness monitor 20 is in the same plane as the position corresponding to the surface of the substrate 6 held perpendicularly by the substrate holding means 82 with respect to the evaporation source unit 71 (the same interval as the evaporation source unit 71 and the substrate 6). In the longitudinal direction of the evaporation source portion 71 (the direction in which the nozzles 73a to 73n are arranged) at the position corresponding to the surface of the substrate 6 at the deposition rate (the thickness of the deposited film per unit time). The distribution can be detected.

  The control unit (not shown) analyzes the film formation rate at the substrate surface position corresponding to the evaporation amount from each nozzle 73i (i = a to n) detected by the film thickness monitor 20, and each nozzle 73i (i = Check the state of evaporation from a to n), identify nozzles with a smaller detection signal than others, or compare the detection signal levels from all nozzles with a preset reference level to see if there is an excessive amount of evaporation. Can be checked.

  Since the state of discharge of the vapor deposition material thus evaporated from the individual nozzles 73i (i = a to n) into the processing chamber can be checked, finer control of the vapor deposition rate, that is, on the substrate. The uniformity of the film thickness distribution of the thin film to be formed can be improved.

  The film thickness monitor 20 is scanned to check the state of release of the vapor deposition material evaporated from the evaporation source 71a from the nozzles 73a to 73n to the inside of the processing chamber, and after confirming that there is no abnormality, the vertical drive means 72 evaporates. The source part 71 is lowered at a constant speed, and a light emitting material is vapor-deposited through a shadow mask 81 on the substrate 6 installed on the opposite surface. The evaporation source unit 71 passes the opposing substrate 6 and reaches the standby position WSu at the descending end, and waits for the start of vapor deposition on the next substrate with the front surface covered with the shutter 75.

  In this embodiment, since the film thickness monitor 20 is provided only on the side closer to the standby position WSu1 at the rising end of the evaporation source unit 71, when the evaporation source unit 71 starts to rise from the standby position WSl on the lowering end side. The evaporation amount is not monitored.

  FIG. 6 is a diagram showing a processing flow of the processing chamber 1 having such a configuration. As a basic idea of processing in the present embodiment, the substrate is transported with the vapor deposition surface as an upper surface, and the substrate 6 transported on the upper surface is vertically set and transported to the alignment unit 8 for vapor deposition. If the lower surface of the substrate 6 is a vapor deposition surface at the time of conveyance, it is necessary to invert it.

  First, the substrate 6 is carried in (S601), the substrate 6 is vertically set and moved to the alignment unit 8 (S602), and the alignment between the substrate 6 and the shadow mask 81 is performed (S603). At this time, since the substrate 6 is transported with the vapor deposition surface facing up, the substrate 6 can be aligned immediately upright. As shown in the drawing of FIG. 3, the alignment is performed by taking an image with a CCD camera (not shown) so that the alignment mark 84 provided on the substrate 6 is at the center of the window 85 provided on the mask 81M. The shadow mask 81 is controlled by the alignment drive unit 83. The size of the window 85 varies depending on the color, but is about several 100 μm on average. The thickness of the mask 81M is several tens to several hundreds of μm, and tends to be thinner in the future.

  While the substrate 6 is being carried in, the evaporation source 71 is retracted to the standby position WSu1 at the rising end, and the nozzles 73a to 73n are covered with a shutter 74. Next, when the alignment of the substrate 6 is completed, the evaporation source unit 71 descends from the standby position WSu1 at the rising end and moves to a position WSu2 out of the shutter 74 and stops (S604), and evaporates from each of the evaporation sources 71a to 71n. The deposited film material is discharged into the processing chamber 1 from the nozzles 73a to 73n.

  In this state, the film thickness monitor 20 starts scanning along each of the nozzles 73a to 73n (S605), monitors the vapor deposition rate at each position corresponding to the surface of the substrate 6, and passes through the inside of the processing chamber from each of the nozzles 73a to 73n. The state of release of the evaporated film forming material is detected (S606). When the scanning of the film thickness monitor 20 is completed (S607), the control unit 50 checks the nozzles 73a to n and the entire deposition rate (S608), and if there is an abnormality, the cause is clogging of the nozzles 73a to n. Or whether the voltage applied to the heater 71H is abnormal (S609), and if the voltage applied to the heater 71H is abnormal, it is fed back to the voltage applied to the heater 71H (S610). On the other hand, when the nozzles 73a to 73n are clogged, an alarm is issued to notify the abnormality (S611).

  When the evaporation amount check from the nozzles 73a to 73n by the film thickness monitor 20 and the alignment of the shadow mask 81 and the substrate 6 are completed, the evaporation source unit 71 is moved downward by being driven by the vertical driving means 72. (S612), the evaporation material 71Z evaporated while moving the evaporation source section 71 at a constant speed is discharged from the nozzles 73a to 73n to the inside of the processing chamber 1, and the shadow mask 81 is disengaged on the substrate. A thin film is formed by vapor deposition (S613). When the evaporation source unit 71 reaches the lower end, the lowering of the evaporation source unit 71 is stopped (S614). When the evaporation of the substrate 6 is completed, the nozzles 73a to n of the evaporation source unit 71 at the lower end standby position WSl are moved to the shutter 75. It waits until the vapor deposition to the next board | substrate is started in the state covered with. Next, the substrate 6 is unloaded from the processing chamber 1 (S615), and a next new substrate 6 'is awaited for loading.

Next, a new substrate 6 ′ is carried in (S616), the new substrate 6 ′ is held vertically (S617), and when alignment with the shadow mask is completed (S618), it is driven by the vertical drive means 72. Then, the upward movement of the evaporation source unit 71 is started (S619), and the evaporation material 71Z evaporated while moving the evaporation source unit 71 at a constant speed is discharged from the nozzles 73a to 73n into the processing chamber 1. The shadow mask 81 is removed and deposited on the substrate to form a thin film (S620). When the evaporation source unit 71 reaches the upper end, the elevating of the evaporation source unit 71 is stopped (S621), the deposition of a new substrate 6 ′ is completed, and the substrate 6 ′ after the deposition is carried out. Here, when the evaporation of a new substrate 6 ′ is started, the evaporation source unit 71 is on the lower end side, and the film thickness monitor 20 is not installed on the processing end side. The evaporation amount from each of the nozzles 73a to 73n before starting is not monitored. That is, the processing corresponding to the flow from (S704) to (S711) is not performed.
Thereafter, the above flow is repeated.

  According to the embodiment described above, the deposition rate distribution in the alignment direction of the nozzles 73a to n of the evaporation source unit 71 on the surface of the substrate 6 is monitored to adjust the discharge amount of the vapor deposition material from the nozzles 73a to 73n. By doing so, it is possible to provide an organic EL device manufacturing apparatus having a uniform film thickness distribution and high reliability.

  In the above-described embodiments, the case where the substrate 6 is transported with the vapor deposition surface facing upward has been described. As other methods for transporting the substrate, there are a method for transporting with the deposition surface facing down, and a method for transporting the substrate in a case or the like.

  However, the basic idea of detecting the distribution of the deposition rate at the position corresponding to the substrate surface and adjusting the amount of deposition material released from each nozzle of the evaporation source is not related to the transport method. The present invention can be applied regardless of the method.

  In the above description, the organic EL device has been described as an example. However, the present invention can also be applied to a film forming apparatus and a film forming method that perform vapor deposition processing in the same background as the organic EL device.

  In the first embodiment, the example in which the substrates 6 are processed one by one in the vacuum deposition chamber 1bu has been described, but in the second embodiment, two sets of substrate holding means 82 are provided in the vacuum deposition chamber 1bu and the space between them is evaporated. The source is moved to sequentially form a film. While the substrate held by one of the substrate holding means 82R is processed, another substrate is set on the other substrate holding means 82L, and the shadow mask 81 and the substrate 6 are set. A configuration for improving the throughput of the apparatus by aligning with the apparatus will be described.

  The difference between the second embodiment and the first embodiment is that the shadow mask 81, the substrate holding means 82, the comb-like hand 94, and the substrate turning means 93 are arranged on the right R line and the left L line in the vacuum deposition chamber 1bu, respectively. It is in the point of having two systems.

  A description of the same parts as those in the first embodiment will be omitted, and differences from the first embodiment will be described.

  FIG. 7 shows an example of the configuration of an organic EL device manufacturing apparatus according to the second embodiment. The organic EL device manufacturing apparatus 100 according to the present embodiment is installed in a substrate carrying-in unit 4a for carrying in a substrate 6 to be processed, three processing units 7A to 7C for processing the loaded substrate 6, and each processing unit. There are provided transfer arms 705a to 705c, substrate transfer chambers 704b to 704d installed between adjacent processing units (7A and 7B, 7B and 7C) and between the processing unit 7C and the next process (sealing process). It is configured. Each of the processing units 7A to 7C includes two processing chambers 71a and 71b, 72a and 72b, 73a and 73b, and transfer chambers 702a to 702c in which transfer arms 705a to 705c are installed. Each of the processing chambers 71a and 71b, 72a and 72b, 73a and 73b includes two sets of substrate holding means, and performs the same processing for each of the processing units 7A to 7C.

Further, gate valves 710a-1 to 710a-4 are provided between the transfer chambers 702a to 702c and the processing chambers 71a, 71b, 72a, 72b, 73a and 73b, the substrate carry-in portion 704a and the substrate delivery chamber portions 704b to 704d. 710b-1 to 710b-4 and 710c-1 to 710c-4, and each space is individually maintained in a vacuum state by a vacuum exhaust means (not shown). The board | substrate 6 carried in from carrying-in entrance 704a-1 of 704a is conveyed in a vacuum atmosphere, without being exposed to air | atmosphere until just before discharging | emitting from the carrying-out exit 704d-1 of the board | substrate delivery part 704d.
Next, a processing flow until the substrate 6 carried in from the substrate carry-in unit 704a in the configuration shown in FIG. 7 is processed and discharged from the substrate delivery unit 704d will be described.

  First, the substrate carry-in unit 704a receives a substrate from a substrate supply unit (not shown) from the carry-in port 704a-1. Next, after the inside of the substrate carrying-in portion 704a is evacuated to a vacuum by a vacuum evacuation unit (not shown), the gate valve 710a-1 is opened, and the inside is evacuated to a vacuum by a vacuum evacuation unit (not shown). The substrate 6 is carried into the processing unit 7A by the transfer arm 705a installed in the transfer chamber 702a of the unit 7A. Next, the gate valve 710a-1 is closed, and within the processing unit 7A, the transfer arm 705a is a holding means of any one of the processing chambers 71a or 71b in which the substrate 6 is not held, for example, a processing chamber. The gate valve 710a-2 is opened to supply the substrate 6 to the holding means of the substrate processing unit 701a-1 of 71a.

  In the substrate processing unit 701a-1 of the processing chamber 71a to which the substrate 6 has been supplied, after the transfer arm 705a is retracted, the gate valve 710a-2 is closed and the inside is made high vacuum up to a predetermined pressure by a vacuum exhaust means (not shown). After evacuation, a thin film is formed on the substrate 6 by vacuum deposition.

  Then, after a thin film is formed on the substrate 6 by performing vacuum deposition for a predetermined time, the vacuum deposition on the substrate is stopped, the gate valve 710a-2 is opened, and the substrate 6 is transferred to the substrate processing unit 701a-1 by the transfer arm 705a. The substrate 6 is taken out from the transfer chamber 702a, the gate valve 710a-2 is closed, the gate valve 710a-3 is opened, and the substrate 6 is transferred to the substrate transfer section 704b. After the substrate 6 is transferred to the substrate transfer section 704b and the transfer arm 705a is retracted to the transfer chamber 702a, the gate valve 710a-3 is closed, and then the gate valve 710b-1 is opened and the transfer arm 705b installed in the transfer chamber 702b. The substrate 6 delivered to the substrate delivery unit 7044b is carried into the transfer chamber 702b. Thereafter, the same processing as the processing inside the processing unit 7A is performed, and then the substrate 6 is carried into the processing unit 7C to perform the same processing. The substrate 6 processed by the processing unit 7C is transferred from the substrate transfer unit 704d to a processing apparatus for the next process (not shown).

FIG. 8 shows an outline of the configuration of the transfer chamber and the processing chamber according to the second embodiment.
Although the configuration of the processing chamber differs depending on the processing content, a vacuum deposition chamber 7A in which a light emitting material is deposited in vacuum to form an EL layer will be described as an example. A transfer robot 705a installed inside the transfer chamber 702a has an arm 851 having a structure that can be swung left and right. A comb-like hand 852 for transferring a substrate is attached to the tip of the arm 851, and the base portion 805 is connected to the transfer chamber. It is fixed inside 702a.

On the other hand, inside the processing chamber 71a, an evaporation source part 871 for roughly evaporating the luminescent material and depositing it on the substrate 6 and the substrate 6 holding the evaporation source part 871 vertically by the substrate holding means 882R or 882L. A comb-like hand that transfers the substrate 6 between the vertical drive unit 876 that is driven in the vertical direction parallel to the substrate 6, the shadow mask 81 that deposits a luminescent material on a necessary portion of the substrate 6, and the transfer robot 705a. 894, substrate turning means 891 driven by a motor 893 that turns the substrate 6 received by the comb-like hand 894 to stand upright and moves it to the substrate holding means 882, and the evaporation source section 871 between the L line and the R line. And a drive unit 876 that moves along the rail 875. When vacuum deposition is performed, the inside is maintained in a high vacuum state of about 10 ⁻³ to 10 ⁻⁴ Pa by a vacuum exhaust pump (not shown).

  Although omitted in FIG. 8, the transfer chamber 702a and the processing chamber 71a are partitioned by a gate valve 710a-2 that can be opened and closed.

  As shown in FIG. 9, the evaporation source portion 871 is moved between the left and right alignment portions L and R along the rail 857 by the left and right driving means 856. A film thickness monitor 820 is installed in the middle of the movement path between the left and right alignment sections L and R of the evaporation section 871, and the detection surface 821 of the film thickness monitor 820 is vertical by the substrate holding means 82 R or 82 L. It is set so as to be in the same plane as the surface of the substrate 6 held by the substrate. When the evaporation source part 871 moves at a constant speed between the left and right alignment parts L and R along the rail 857 by being driven by the left and right driving means 856, the nozzles 873a to n of the evaporation source part 871 are moved to the film. The amount of evaporation from each nozzle 873a-n is detected by the film thickness monitor 820 as a change in film thickness immediately before the thickness monitor 820, and this detected signal is sent to a control unit (not shown) and set in advance. Excessive deposition amount and distribution can be checked in comparison with the reference level.

  The detailed configuration of the evaporation source section 871 is basically the same as that described with reference to FIG. 5 in the first embodiment.

  FIG. 10 is a diagram showing a processing flow in the processing chamber 71a in the second embodiment. In the same manner as described in the first embodiment, the basic concept of processing in this embodiment is carried by the carrying arm 705a with the vapor deposition surface of the substrate 6 as the upper surface, and the substrate 6 conveyed on the upper surface is turned. Vertically set by means 891, held by substrate holding means 882, transported to alignment part L or R, and vapor deposited. If the lower surface of the substrate 6 is a vapor deposition surface at the time of conveyance, it is necessary to invert it.

  Further, in this embodiment, the time required for the vapor deposition step is substantially the same as the time required for carrying the substrate 6 into the processing chamber 71a and completing the alignment. In this embodiment, each time is about 1 minute. is there. Therefore, another basic concept of the processing in the present embodiment is that while the vapor deposition is performed in one line L or R, the processed substrate is unloaded in the other line R or L and a new substrate is taken out. To complete the preparation for vapor deposition. By alternately performing this process, the standby time of the evaporation source can be shortened, and the time during which the material is wasted in the atmosphere can be reduced.

  The processing flow will be described in detail with reference to FIG. First, in the R line, the substrate 6R is loaded (S1001R), the substrate 6R is vertically set up and moved to the alignment unit 8R (S1002R), and the substrate 6 and the shadow mask 81 are aligned (S1003R). At this time, the substrate 6 is transported with the vapor deposition surface facing upward in order to perform vertical alignment immediately. As described in the first embodiment, the alignment is performed by imaging with an imaging means (not shown) such as a CCD camera as shown in the drawing of FIG. The shadow mask 81R is controlled by the alignment driving unit 83R so as to come to the center of the window 85 provided with the shadow mask 81R. If the main vapor deposition is a material that emits red (R), as shown in FIG. 3, there is a window in a portion corresponding to R of the mask 81M of the shadow mask 81R, and the substrate 6 is a portion under the window. Will be deposited.

  When the alignment is completed, the apparatus waits on the L line side and drives the evaporation source portion 871 whose front surface is covered with the shutter 974L by the left and right driving means 856 and moves it to the R line side along the rail 857 (S1001E). At this time, the evaporation source section 871 moves at a constant speed between the L line side and the R line side, and each nozzle 873a-n of the evaporation source 871a passes immediately before the film thickness monitor 820 at a position off the shutter 974L. Thus, the amount of evaporation from each nozzle 873a-n is detected by the film thickness monitor 820 as a change in film thickness, that is, a deposition rate (S1002E), and the detected signal is sent to a control unit (not shown).

  After the movement of the evaporation source section 871 to the R line side is completed (S1003E), the control section (not shown) checks each nozzle 873a-n and the entire evaporation amount for any abnormality (S1004E). In some cases, it is determined whether the cause is the clogging of the nozzles 873a to n or the applied voltage abnormality of the heater 71H (can be handled by the control of the heater 71H) (S1005E). Is fed back to the voltage applied to the heater 71H (S1006E). On the other hand, if the nozzles 873a-n are clogged, an alarm is issued to notify the abnormality (S1007E).

  After checking the amount of evaporation from each nozzle 873a-n by the film thickness monitor 820, the shadow mask 81 and the substrate are in a state where each nozzle 73a-n of the evaporation source section 871 is covered with the shutter 974R at the standby position on the R line side. When the alignment with 6R is completed, the evaporation source portion 871 is continuously moved upward by being driven by the vertical drive means 872 (S1004R), and the evaporated material 71Z evaporated at the position outside the shutter 874R is A thin film is formed by discharging from the nozzles 873a to n to the inside of the processing chamber 71a and depositing on the substrate 6R through the shadow mask 81 (S1005R). When the evaporation source portion 871 reaches the vicinity of the upper ends of the pair of rails 876 and the deposition of the substrate 6R is completed, the upward movement of the evaporation source portion 871 stops (S1006R), and the evaporation source portion at the upper ends of the pair of guide shafts 876R. It waits in the state where each nozzle 73a-n 871 is covered with the shutter 975R.

  On the other hand, during vapor deposition on the substrate 6R using the R line, the same processing as (S1001R) to (S0103R) of the R line is performed for the L line. That is, another substrate 6L is carried in (S1001L), the substrate 6L is vertically set and moved to the alignment unit 8L (S1002L), and alignment with the shadow mask 81L is performed (S1003L).

  The evaporation source unit 871 waiting for the upper ends of the pair of guide shafts 876 after completing the deposition of the R-line substrate 6R confirms that the alignment between the substrate 6L and the shadow mask 81L has been completed, and is driven. It is driven by the portion 856 and moves to the L line side along the rail 875 (S1008E), and the front surface (the surface on which each nozzle 73a-n is provided) is covered with the shutter 975L. Here, when moving from the R line side to the L line side, the evaporation source unit 871 stands by at the upper ends of the pair of guide shafts 876, so that the evaporation from each nozzle 73 a-n by the film thickness monitor 820 is performed. No quantity check is performed. Further, the shutters 875R and 875L may be formed integrally without being separated. In that case, the evaporation source unit 871 moves from the R line side to the L line side in a state where the surface (front surface) on which the nozzles 73a to 73n are provided is covered with the shutter.

  Next, the evaporation source portion 871 that has reached the L line side is driven by the vertical drive means 883 to start moving downward (S1004L), and the evaporation material 71Z evaporated from where it was uncovered by the shutter 975L. A thin film is formed by discharging from the nozzles 73a to 73n into the processing chamber 71a and depositing on the substrate 6L through the shadow mask 81 (S1005L), and the evaporation source section 871 reaches the vicinity of the lower ends of the pair of rails 876. When 6L deposition is completed, the downward movement of the evaporation source portion 871 is stopped (S1006L), and the nozzles 73a to n of the evaporation source portion 871 are covered with the shutter 974L at the lower ends of the pair of guide shafts 876. stand by.

On the other hand, in the R line, it is confirmed that the evaporation source section 871 has moved to the L line side, and an operation of unloading the substrate 6R from the processing chamber 71a is started (S1007R). Thereafter, a new substrate 6R ′ is carried in (S1008R), the substrate 6R ′ is set up vertically and moved to the alignment unit 8R (S1009R), and alignment between the substrate 6R ′ and the shadow mask 81R is performed (S1010R).
Thereafter, the above flow is repeated.

  According to the present embodiment, as described in the first embodiment, since the mask 81 can be prevented from being heated by the radiant heat from the evaporation source 71a by the water-cooled cooling plate 71w, the evaporation is performed only by the reflector 71r. In addition to making it possible to reduce the distance between the evaporation source 71a and the substrate 6 as compared with the case where the radiant heat from the source 71a is cut off, the vapor deposition material is used in vain except for the movement time of the evaporation source portion 871. It is possible to form a vapor deposition film on the substrate without increasing the rate at which the vapor deposition material contributes to the actual film formation, that is, to increase the utilization efficiency of the material and to effectively use the expensive vapor deposition material. Became.

  In addition, since two substrates can be processed sequentially with one evaporation source, it becomes possible to process substrates with a smaller number of evaporation sources than in the past, and the equipment can be downsized and power consumption can be reduced. It became possible.

  Further, since the amount of vapor deposition material adhering to the inside of the processing chamber 71a is reduced by increasing the material utilization efficiency, the progress of dirt inside the processing chamber 71a is delayed, and the cleaning interval inside the processing chamber 71a is reduced. It has become possible to increase the operating rate of the apparatus. Further, by narrowing the distance between the evaporation source 871a and the substrate 6, the film formation rate is increased and the throughput can be improved.

  Also in this embodiment, the reflector 71r may be omitted if the cooling performance of the water-cooled cooling plate 71w is sufficient.

  In the above-described embodiment, an example of an apparatus for forming an organic EL film on a substrate by vacuum deposition has been described. However, the present invention is not limited thereto, and a vapor deposition thin film other than organic EL, such as a metal thin film, It can also be applied to the formation of inorganic material-based thin films.

  1A, 1B, 1C, 7A, 7B, 7C... Processing units 1a-1 to 1, 1b-1 to 1, 1c-1 to 4, 701a-1 to 4, 701b-1 to 4, 701c-1 to 4 ... Processing chambers 2a to c, 702a to c ... Transfer chambers 4a, 704a ... Substrate loading portions 4b to d, 704b to d ... Substrate delivery chambers 5a to c, 705a to c ... Transfer arm 6 ... Substrate 10a-1-6, 10b-1-6, 10c-1-6, 710a-1-6, 710b-1-6, 710c-1-6 ... Gate valve 20,820 ... Film thickness monitor 21 ... Horizontal guide 24 ... Driver 41 ... Monitor head 42 ... Support member 71 ... Evaporation source 71a ... Evaporation source 71a-1, 71a- 2 ... Space 71a-3, 73i, 873a-n ... Opening 71 ... Partition plate 71c ... Cover 71H ... Heater 71r ... Reflector 71q ... Flow path 71s ... Temperature sensor 71w ... Water-cooled cooling plate 72 ... Vertical drive means 73a- n: Evaporation source nozzle 74, 75, 974R, 974L, 975R, 975L ... Shutter 76 ... Guide shaft 81 ... Shadow mask 82 ... Substrate holding means 875 ... Rail 876 ... -Left and right drive means.

Claims (12)

In a vacuum evacuated chamber, a vacuum deposition apparatus for depositing a vapor deposition material vaporized by heating on a panel-shaped substrate,
Holding means for holding the substrate;
An evaporation source having a shape that is long in one direction that is emitted from a plurality of nozzles that are vaporized and disposed on a line;
Moving means for moving at least one of the evaporation source or the holding means for holding the substrate in a direction perpendicular to one long direction of the evaporation source;
Detecting means for detecting a release rate of the vapor deposition material from the evaporation source, and the evaporation source includes an evaporation material storage portion for storing the evaporation material, and heating for heating the evaporation material stored in the storage portion. And a cooling part that is located between the heating part and the holding means and that has a cooling water passage inside that shields radiant heat generated from the heating part and directed toward the substrate. Vacuum deposition equipment. The vacuum evaporation apparatus includes two sets of holding means for holding the substrate, and the evaporation source is driven in a direction parallel to one long direction of the evaporation source to reciprocate between the two sets of holding means. The vacuum evaporation apparatus according to claim 1, further comprising: a moving means. Equipped with a plurality of vacuum deposition sections that form a thin film by vapor deposition on the surface of the substrate to be treated whose surface is covered with a shadow mask in a processing chamber that is evacuated and maintained in a vacuum state. A vacuum deposition apparatus having a substrate delivery section for delivering a substrate between the plurality of vacuum deposition sections,
At least one vacuum deposition part of the plurality of vacuum deposition parts,
An evaporation source for releasing the material evaporated through a plurality of nozzles arranged on a line into the processing chamber;
Substrate holding means for holding the substrate to be processed in a state covered with the shadow mask;
Evaporation source driving means for scanning the evaporation source along a substrate to be processed held in a state of being covered with a shadow mask by the substrate holding means in a direction perpendicular to the arrangement direction of a plurality of nozzles arranged on the line; ,
The evaporation source is located between the heating unit and the holding means, an evaporation material storage unit for storing the evaporation material, a heating unit for heating the evaporation material stored in the storage unit, A vacuum vapor deposition apparatus comprising: a cooling unit provided with a cooling water passage in an inside thereof that blocks radiation heat generated from the heating unit and directed toward the substrate.   4. The at least one vacuum vapor deposition section has two sets of the substrate holding means, and further comprises a moving means for moving the evaporation source between the two sets of substrate holding means. Vacuum deposition equipment. A vacuum chamber equipped with a vacuum exhaust means;
An evaporation source for releasing the evaporated material into the vacuum chamber through a plurality of nozzles arranged on a line;
Substrate holding means for holding the substrate to be processed in a state covered with a shadow mask;
Evaporation source driving means for scanning the evaporation source in a direction perpendicular to the arrangement direction of the plurality of nozzles arranged on the line along the target substrate held by the substrate holding means;
Monitoring means for monitoring the state of release of the material released from the evaporation source by moving together with the evaporation source by the evaporation source driving means;
The evaporation source is located between the heating unit and the holding means, an evaporation material storage unit for storing the evaporation material, a heating unit for heating the evaporation material stored in the storage unit, A vacuum vapor deposition apparatus comprising: a cooling unit provided with a cooling water passage in an inside thereof that blocks radiation heat generated from the heating unit and directed toward the substrate. 6. The vacuum vapor deposition apparatus according to claim 5, further comprising a moving means for providing two sets of the substrate holding means and reciprocally moving the evaporation source between the two sets of holding means. The vacuum deposition apparatus according to claim 1, further comprising a reflecting plate that reflects radiant heat emitted from the heating unit between the heating unit and the cooling unit. Second monitoring means for monitoring the state of discharge of the material from a plurality of nozzles which are moved relative to the evaporation source along the longitudinal direction of the evaporation source and are arranged on the line of the evaporation source; The vacuum evaporation apparatus according to any one of claims 1, 3, and 5, wherein the vacuum evaporation apparatus is provided. A first thin film is formed by vapor deposition on the surface of the substrate to be processed in a first processing chamber maintained in a vacuum state by evacuating the inside, and the substrate to be processed on which the thin film is formed by vapor deposition in the first processing chamber is vacuumed. A vacuum deposition method in which the second thin film is formed by vapor deposition on the surface of the substrate to be processed in the second processing chamber in an atmosphere maintained at
Vapor deposition in which at least one of the first processing chamber and the second processing chamber has a surface covered with a shadow mask and is held by a holding means and vaporized by an evaporation source. The material is discharged into the processing chamber through a plurality of nozzles arranged on a line, and fired from the evaporation source by a water-cooled cooling unit arranged between the plurality of nozzles of the evaporation source and the shadow mask. A vacuum vapor deposition characterized by forming a thin film on the surface of the substrate to be processed covered by the shadow mask by scanning the evaporation source along the surface of the substrate to be processed while blocking radiant heat toward the shadow mask. Method. A substrate to be processed is held by a holding unit in a state where the surface is covered with a shadow mask, and the material is evaporated through a plurality of nozzles arranged on a line in the evaporation source, and the plurality of nozzles of the evaporation source, the shadow mask, A water-cooled cooling unit arranged between the shadow mask and the shadow mask is covered with the shadow mask by scanning the evaporation source along the surface of the substrate to be processed while blocking the radiant heat directed to the shadow mask. A vacuum vapor deposition method comprising forming a thin film on the surface of a broken substrate. A reflection plate is provided between the plurality of nozzles of the evaporation source and the water-cooled cooling unit to reflect the radiant heat emitted from the evaporation source by the reflection plate and to be heated by the radiant heat emitted from the evaporation source. The vacuum vapor deposition method according to claim 9, wherein radiant heat from the reflected plate is blocked by the water-cooled cooling unit. The monitoring means for monitoring the state of discharge of the material is moved relative to the evaporation source along the direction of the line of the plurality of nozzles arranged in the evaporation source, whereby the material from the plurality of nozzles is moved. The vacuum deposition method according to claim 9, wherein the state of emission is monitored.

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