KR102494263B1 - Apparatus for Processing Substrate - Google Patents

Abstract

The present invention chamber; A resting table on which the substrate is placed; a first electrode positioned above the seating table; a second electrode positioned between the first electrode and the seating table; a first injection unit for injecting a first gas through the first electrode; a second injection unit for injecting a second gas through the first electrode; a first injection unit for injecting the first gas into the first injection unit; a second injection unit for injecting the second gas into the second injection unit; and a plurality of openings formed to pass through the second electrode, wherein the first injection part and the second injection part are disposed on the same side of the first electrode, and the first and second electrodes are mutually connected to each other. The first gas injected by the first injection unit and the second gas injected by the second injection unit are supplied to the resting table through the openings, and the first injection unit is injected into the first injection unit. A first gas is disposed on one side of the first electrode so that a first gas flows from one side of the first electrode to the other side, and the second injection unit injects the second gas injected into the second injection unit into one side of the first electrode. It relates to a substrate processing apparatus disposed on one side of the first electrode so as to flow toward the other side.

Description

Substrate processing device {Apparatus for Processing Substrate}

The present invention relates to a substrate processing apparatus that performs a processing process such as a deposition process and an etching process for a substrate.

In general, in order to manufacture solar cells, semiconductor devices, flat panel displays, etc., a predetermined thin film layer, thin film circuit pattern, or optical pattern must be formed on a substrate. To this end, processing processes such as a deposition process of depositing a thin film of a specific material on a substrate, a photo process of selectively exposing a thin film using a photosensitive material, and an etching process of forming a pattern by selectively removing the thin film of an exposed portion are used. It is done. This processing process is performed by a substrate processing apparatus.

A substrate processing apparatus according to the prior art performs the processing process by injecting two or more gases toward a substrate. However, in the substrate processing apparatus according to the prior art, since gases are sprayed at different flow rates for each part of the substrate, the quality of the substrate that has undergone the processing process is deteriorated as the flow rate ratio for the gases varies for each part of the substrate. There is a problem with deterioration.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems, and is to provide a substrate processing apparatus capable of reducing a variation in a flow rate ratio of gases for each part of a substrate.

In order to solve the problems as described above, the present invention may include the following configuration.

A substrate processing apparatus according to the present invention includes a chamber; A resting table on which the substrate is placed; a first electrode positioned above the seating table; a second electrode positioned between the first electrode and the seating table; a first injection unit for injecting a first gas through the first electrode; a second injection unit for injecting a second gas through the first electrode; a first injection unit for injecting the first gas into the first injection unit; a second injection unit for injecting the second gas into the second injection unit; and a plurality of openings formed to pass through the second electrode. The first injection part and the second injection part may be disposed on the same side of the first electrode. The first electrode and the second electrode may be spaced apart from each other. The first gas injected by the first injection unit and the second gas injected by the second injection unit are supplied toward the seating table through the openings, and the first gas injected by the first injection unit into the first injection unit It may be disposed on one side of the first electrode so as to flow from one side of the first electrode to the other side. The second injection unit may be disposed on one side of the first electrode so that the second gas injected into the second injection unit flows from one side of the first electrode to the other side.

According to the present invention, the following effects can be achieved.

The present invention is implemented to reduce the deviation of the gas flow rate ratio for each part of the substrate, so that the waste of gas can be reduced, thereby reducing the process cost as well as improving the quality of the substrate that has undergone the processing process. .

1 is a schematic side cross-sectional view of a substrate processing apparatus according to the present invention
Figure 2 is a schematic side cross-sectional view of the first electrode and the second electrode in the substrate processing apparatus according to the present invention
3 is a schematic cross-sectional side view of a first electrode and a second electrode in a comparative example;
Figure 4 is a conceptual side view for explaining a modified embodiment of the location of the first injection unit and the second injection unit in the substrate processing apparatus according to the present invention.
Figure 5 is a schematic side cross-sectional view of the first injection member and the second injection member in the substrate processing apparatus according to the present invention
6 is an enlarged view of part A of FIG. 5
7 is a schematic cross-sectional plan view of a first electrode and a first injection unit in the substrate processing apparatus according to the present invention.
8 is a conceptual plan cross-sectional view for explaining a difference in size of a first supply hole according to a distance away from a first injection part in the substrate processing apparatus according to the present invention.
9 is a schematic cross-sectional plan view of a modified embodiment of a first electrode and a first injection unit in the substrate processing apparatus according to the present invention.
10 is a conceptual plan cross-sectional view for explaining a difference in size of a first supply hole according to a length of a first spray member in the substrate processing apparatus according to the present invention.
11 is a schematic cross-sectional plan view of a first electrode and a second injection unit in the substrate processing apparatus according to the present invention.
12 is a conceptual plan cross-sectional view for explaining a difference in size of a second supply hole according to a distance away from a second injection unit in the substrate processing apparatus according to the present invention.
13 is a schematic cross-sectional plan view of a modified embodiment of a first electrode and a second injection unit in the substrate processing apparatus according to the present invention.
14 is a conceptual plan cross-sectional view for explaining the size difference of the second supply hole according to the length of the second spray member in the substrate processing apparatus according to the present invention.
15 is a conceptual plan view for explaining the arrangement of the first injection unit, the second injection unit, the first injection member, and the second injection member in the substrate processing apparatus according to the present invention.
16 is a schematic side cross-sectional view of a first supply member and a second supply member in the substrate processing apparatus according to the present invention.
17 is an enlarged view of part B of FIG. 16
18 is a schematic side cross-sectional view for explaining an exhaust port and a temperature control unit in the substrate processing apparatus according to the present invention.

Hereinafter, an embodiment of a substrate processing apparatus according to the present invention will be described in detail with reference to the accompanying drawings.

Referring to FIGS. 1 and 2 , the substrate processing apparatus 1 according to the present invention performs a processing process on a substrate 200 . For example, the substrate processing apparatus 1 according to the present invention may perform at least one of a deposition process of depositing a thin film on the substrate 200 and an etching process of removing a part of the thin film deposited on the substrate 200. there is. For example, the substrate processing apparatus 1 according to the present invention may perform a deposition process such as Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD). The substrate processing apparatus 1 according to the present invention includes a seating table 2, a first electrode 3, a second electrode 4, a first injection unit 5, a second injection unit 6, and a first injection unit. It includes a sand part 7 and a second spray part 8.

Referring to FIG. 1 , the seating table 2 supports the substrate 200 . The substrate 200 may be placed on the seating table 2 . The seating table 2 may be disposed below the second electrode 4 . In this case, the substrate 200 may be placed on the upper surface of the seating table 2 . The substrate 200 may be a semiconductor substrate or a wafer. The seating table 2 may support a plurality of substrates 200 .

The seating table 2 may be coupled to the chamber 100 . The chamber 100 provides a processing space in which the processing process is performed. The seating table 2 may be disposed inside the chamber 100 . The seating table 2 may be rotatably coupled to the chamber 100 . In this case, the seating table 2 may be connected to a rotating part providing rotational force. The rotating unit may rotate the substrate 200 supported by the seating table 2 by rotating the seating table 2 .

Referring to FIG. 1 , the first electrode 3 is positioned above the seating table 2 . The first electrode 3 may be positioned above the second electrode 4 . The first electrode 3 may be disposed to be spaced apart from the second electrode 4 by a predetermined distance upward. The first electrode 3 may be disposed inside the chamber 100 . The first electrode 3 may be coupled to the chamber 100 so as to be positioned above the chamber 100 . The first electrode 3 may be formed in a rectangular plate shape as a whole, but is not limited thereto and may be formed in other shapes such as a disk shape.

Referring to FIG. 1 , the second electrode 4 is positioned between the first electrode 3 and the seating table 2 . The second electrode 4 may be located below the first electrode 3 and above the seating table 2 . The second electrode 4 may be arranged to be spaced apart from the seating table 2 by a predetermined distance upward. The second electrode 4 may be disposed inside the chamber 100 . The second electrode 4 may be formed in a rectangular plate shape as a whole, but is not limited thereto and may be formed in other shapes such as a disk shape.

The second electrode 4 and the first electrode 3 may be used to generate plasma. Radio frequency (RF) power may be applied to one of the second electrode 4 and the first electrode 3, and the other may be grounded. Accordingly, a discharge is made by an electric field applied between the second electrode 4 and the first electrode 3 to generate plasma. RF power may be applied to the second electrode 4, and the first electrode 3 may be grounded. The second electrode 4 may be grounded, and RF power may be applied to the first electrode 3 .

An opening 41 may be formed in the second electrode 4 . The opening 41 may be formed to pass through the second electrode 4 . The opening 41 may be formed to pass through upper and lower surfaces of the second electrode 4 . The opening 41 may be formed in a cylindrical shape as a whole, but is not limited thereto and may be formed in other shapes such as a rectangular parallelepiped shape.

When the opening 41 is formed in the second electrode 4, the protruding electrode 31 may be coupled to the first electrode 3. The protruding electrode 31 may be coupled to the first electrode 3 so as to protrude toward the seating table 2 . The protruding electrode 31 may protrude from the lower surface of the first electrode 3 . The protruding electrode 31 and the first electrode 3 may be integrally formed. When the first electrode 3 is grounded, the protruding electrode 31 may be grounded through the first electrode 3 . When RF power is applied to the first electrode 3 , RF power may be applied to the protrusion electrode 31 through the first electrode 3 .

A plurality of openings 41 may be formed in the second electrode 4 . The openings 41 may be provided at positions spaced apart from each other. In this case, a plurality of protruding electrodes 31 may be coupled to the first electrode 3 . The protruding electrodes 31 may be disposed at positions spaced apart from each other. The openings 41 may be disposed at positions corresponding to the protruding electrodes 31 . Accordingly, the protruding electrodes 31 may protrude toward the openings 41 . The protruding electrodes 31 may protrude to a length inserted into the openings 41 . Although not shown, the protruding electrodes 31 may protrude to a length not inserted into the openings 41 . In this case, the protruding electrodes 31 may be positioned above the openings 41 .

Referring to FIGS. 1 and 2 , the first injection unit 5 injects a first gas. The first gas may be a gas for performing a processing process on the substrate 200 . The first gas may be a mixed gas in which a gas for performing a processing process on the substrate 200 and a gas for generating plasma are mixed.

The first injection unit 5 may inject the first gas into the first injection unit 7 . The first gas injected into the first injection part 7 flows along the first injection part 7 so as to be sprayed toward the front surface of the substrate 200, and then the first electrode 3 It can be sprayed toward the seating table (2) through. The entire surface of the substrate 200 may correspond to the entire upper surface of the substrate 200 . The upper surface of the substrate 200 is a surface disposed facing the second electrode 4 . The first injection part 5 may be coupled to the chamber 100 .

Referring to FIGS. 1 to 3 , the second injection unit 6 injects a second gas. The second gas may be a gas for performing a processing process on the substrate 200 . The second gas may be a mixed gas in which a gas for performing a processing process on the substrate 200 and a gas for generating plasma are mixed. The second gas and the first gas may be composed of different components.

The second injection unit 6 may inject the second gas into the second injection unit 8 . The second gas injected into the second injection part 8 flows along the second injection part 8 so as to be sprayed toward the front surface of the substrate 200, and then the first electrode 3 It can be sprayed toward the seating table (2) through. The second injection part 6 may be coupled to the chamber 100 . The second gas injected by the second injection unit 6 and the first gas injected by the first injection unit 5 are injected toward the substrate 200 supported on the seating table 2, so that the substrate ( 200) can be used to perform the treatment process.

The second injection part 6 and the first injection part 5 may be disposed on the same side of the first electrode 3, respectively. The second injection unit 6 and the first injection unit 5 may inject the second gas and the first gas into the second injection unit 8 and the first injection unit 7, respectively. there is. Accordingly, the substrate processing apparatus 1 according to the present invention is comparable to the comparative example in which the second injection part 6 and the first injection part 5 are disposed on the other side with respect to the first electrode 3, respectively. In this case, the deviation of the flow rate ratio of the second gas and the first gas for each part of the substrate 200 may be reduced. Looking at this in detail, it is as follows.

First, as shown in FIG. 3, in the comparative example, the second injection part 6 is disposed on one side 3a of the first electrode 3, and the first injection part 5 is It may be disposed on the side of the upper side (3b) of the electrode (3).

The second gas injected into the second injection unit 8 by the second injection unit 6 gradually increases in flow rate while flowing from one side 3a of the first electrode 3 to the other side 3c. will decrease Accordingly, the flow rate of the second gas injected toward the substrate 200 decreases as it moves from one side 210 of the substrate 200 to the other side 220 . In FIG. 3 , a dotted line arrow indicates the second gas, and the shorter the length of the dotted line arrow, the smaller the flow rate of the second gas.

The first gas injected into the first injection unit 7 by the first injection unit 5 is directed to one side 3a and the other side 3c based on the central portion of the first electrode 3, respectively. As it flows towards the flow, the flow rate gradually decreases. In the central portion of the first electrode 3, a region in which the distance from one side 3a of the first electrode 3 and the distance from the other side 3c of the first electrode 3 approximately coincide. means Accordingly, the flow rate of the first gas injected toward the substrate 200 decreases toward one side 210 and the other side 220 based on the center 230 of the substrate 200. In FIG. 3 , a solid arrow indicates the first gas, and the shorter the length of the solid arrow, the smaller the flow rate of the first gas.

Accordingly, in the comparative example, the first gas and the second gas are applied to one side 210 of the substrate 200, the center 230 of the substrate 200, and the other side 220 of the substrate 200, respectively. The deviation of the flow rate ratio increases. At one side 210 of the substrate 200, the flow rate of the second gas is greater than that of the first gas, and at the center 230 of the substrate 200, the flow rate of the first gas is greater than the flow rate of the second gas. This is because the flow rate of the gas is high and the flow rate of the first gas and the flow rate of the second gas are similar to each other on the other side 220 of the substrate 200 . Therefore, in the comparative example, the flow rate of the remaining gas not used in the treatment process may increase for each part of the substrate 200 . Accordingly, in the comparative example, gas may be wasted unnecessarily, and there is a risk that the remaining gas adversely affects the treatment process.

Next, as shown in FIG. 2, in the embodiment, the second injection part 6 is disposed on one side 3a of the first electrode 3, and the first injection part 5 is disposed on the first It may be disposed on one side (3a) of the electrode (3). That is, in the embodiment, the second injection part 6 and the first injection part 5 may be disposed on the same side with respect to the first electrode 3.

The second gas injected into the second injection unit 8 by the second injection unit 6 gradually increases in flow rate while flowing from one side 3a of the first electrode 3 to the other side 3c. will decrease Accordingly, the flow rate of the second gas injected toward the substrate 200 decreases as it moves from one side 210 of the substrate 200 to the other side 220 . In FIG. 2 , a dotted line arrow indicates the second gas, and the shorter the length of the dotted line arrow, the smaller the flow rate of the second gas.

The first gas injected into the first injection unit 7 by the first injection unit 5 gradually increases in flow rate while flowing from one side 3a of the first electrode 3 to the other side 3c. will decrease Accordingly, the flow rate of the first gas injected toward the substrate 200 decreases as it moves from one side 210 to the other side 220 of the substrate 200 . In FIG. 2 , a solid arrow indicates the first gas, and the shorter the length of the solid arrow, the smaller the flow rate of the first gas.

Accordingly, in the embodiment, since both the flow rate of the second gas and the flow rate of the first gas decrease from one side 210 of the substrate 200 toward the other side 220, the portion of the substrate 200 The deviation of the flow rate ratio for the second gas and the first gas is reduced for each. Therefore, when compared to the comparative example, the embodiment can reduce the flow rate of the remaining gas not used in the treatment process for each part of the substrate 200 . Accordingly, when compared with the comparative example, the embodiment can reduce the process cost by reducing the wasted amount of gas. In addition, when compared with the comparative example, the embodiment can reduce the effect of the remaining gas not used in the treatment process on the treatment process, so that the quality of the substrate 200 that has undergone the treatment process can be improved. .

Although it has been described in FIG. 2 that both the second injection part 6 and the first injection part 5 are disposed on one side 3a of the first electrode 3, it is not limited thereto, and the second injection part (6) and the first injection part 5 may be implemented differently as long as they are disposed on the same side with respect to the first electrode 3.

For example, both the second injection part 6 and the first injection part 5 may be disposed on the other side 3c of the first electrode 3. In this case, both the second gas injected by the second injection unit 6 and the first gas injected by the first injection unit 5 are transferred from the other side 3c of the first electrode 3 to one side 3a. ), the flow rate gradually decreases. Accordingly, both the flow rate of the second gas and the flow rate of the first gas injected toward the substrate 200 decrease from the other side 220 toward the one side 210 of the substrate 200. Therefore, the deviation of the flow rate ratio of the second gas and the first gas for each part of the substrate 200 may be reduced.

For example, as shown in FIG. 4, both the second injection part 6 and the first injection part 5 are located at the center of the first electrode 3 from the upper side 3b of the first electrode 3. It may be arranged to inject the second gas and the first gas through the part. In this case, both the second gas injected by the second injection unit 6 and the first gas injected by the first injection unit 5 have one side (with respect to the central portion of the first electrode 3) ( While flowing toward each of 3a) and the other side 3c, the flow rate gradually decreases. Accordingly, both the flow rate of the second gas and the flow rate of the first gas injected toward the substrate 200 are one side 210 and the other side 220 based on the center 230 of the substrate 200 It decreases as you go towards each. Therefore, the deviation of the flow rate ratio of the second gas and the first gas for each part of the substrate 200 may be reduced. In FIG. 4 , a dotted line arrow indicates the second gas, and the shorter the length of the dotted line arrow, the smaller the flow rate of the second gas. In FIG. 4 , a solid arrow indicates the first gas, and the shorter the length of the solid arrow, the smaller the flow rate of the first gas.

As described above, the substrate processing apparatus 1 according to the present invention is implemented so that the second injection part 6 and the first injection part 5 are disposed on the same side with respect to the first electrode 3, Process costs can be reduced by reducing the amount of waste of gas, and the quality of the substrate 200 that has undergone the treatment process can be improved. On the other hand, the second injection part 6 and the first injection part 5 respectively flow the second gas and the first gas in the same injection direction, so that the second gas and the first gas are injected into the first gas. It may be injected into each of the second injection unit 8 and the first injection unit 7. Accordingly, the substrate processing apparatus 1 according to the present invention can further reduce the deviation of the flow rate ratio of the second gas and the first gas for each part of the substrate 200 .

5 and 6 , the second injection unit 6 and the first injection unit 5 may be connected to the second injection unit 8 and the first injection unit 7, respectively. In this case, the first injection part 5 may include the first injection member 51 , and the second injection part 6 may include the second injection member 61 .

The first injection member 51 is connected to the first injection unit 7 . The first injection unit 5 may inject the first gas into the first injection unit 7 through the first injection member 51 . The first injection unit 5 may include a first injection unit 50 for storing the first gas. The first injection unit 50 may be connected to the first injection member 51 . Accordingly, the first gas stored in the first injection unit 50 may be injected into the first injection unit 7 through the first injection member 51 . The first injection member 51 may include a first injection hole 52 through which the first gas flows to be injected into the first injection part 7 . The first injection hole 52 may be formed to pass through the first injection member 51 . The first injection member 51 may be coupled to the chamber 100 . The first injection member 51 may be coupled to the chamber 100 so as to be connected to the first injection unit 7 .

The first injection member 51 may be disposed at a position spaced apart from the seating table 2 by a first distance L1 with respect to the first axial direction (X-axis direction). The first axial direction (X-axis direction) is an axial direction parallel to the upper surface of the seating table 2 . The first injection member 51 may be disposed at a position spaced apart from the seating table 2 at a first height 51H. Accordingly, the first injection member 51 may be disposed at a higher position than the rest table 2 based on the vertical direction (Z-axis direction). The vertical direction (Z-axis direction) is an axial direction perpendicular to the first axial direction (X-axis direction).

The second injection member 61 is connected to the second injection unit 8 . The second injection unit 6 may inject the second gas into the second injection unit 8 through the second injection member 61 . The second injection unit 6 may include a second injection unit 60 for storing the second gas. The second injection unit 60 may be connected to the second injection member 61 . Accordingly, the second gas stored in the second injection unit 60 may be injected into the second injection unit 8 through the second injection member 61 . The second injection member 61 may include a second injection hole 62 through which the second gas flows to be injected into the second injection part 8 . The second injection hole 62 may be formed to pass through the second injection member 61 . The second injection member 61 may be coupled to the chamber 100 . The second injection member 61 may be coupled to the chamber 100 so as to be connected to the second injection unit 8 .

The second injection member 61 may be disposed at a position spaced apart from the seating table 2 by the first distance L1 based on the first axial direction (X-axis direction). Accordingly, the second injection member 61 and the first injection member 51 are disposed at positions spaced apart from the rest table 2 by the same distance based on the first axial direction (X-axis direction) It can be. Therefore, the second gas injected into the second injection part 8 by the second injection member 61 and the first gas injected into the first injection part 7 by the first injection member 51 are , while flowing along the first axial direction (X-axis direction), the flow rate decreases at the same rate. Therefore, the substrate processing apparatus 1 according to the present invention can reduce the deviation of the flow rate ratio of the second gas and the first gas for each part of the substrate 200 .

The second injection member 61 may be disposed at a position spaced apart from the seating table 2 by a second height 61H. The second height 61H is lower than the first height 51H. Accordingly, the second injection member 61 may be disposed at a lower position than the first injection member 51 based on the vertical direction (Z-axis direction). Therefore, in the substrate processing apparatus 1 according to the present invention, since the second injection member 61 and the first injection member 51 can be disposed at a position where they do not interfere with each other, the second gas and the first injection member 51 can be disposed. Gases may be implemented to be injected into each of the second injection part 8 and the first injection part 7 without being mixed with each other.

When the second injection member 61 is disposed at a position lower than that of the first injection member 51, the second injection part 8 is compared to the first injection part 7 on the seating table ( 2) can be placed closer. Accordingly, when the second injection member 61 and the first injection member 51 inject the second gas and the first gas at the same flow rates, the second injection unit 8 and the first injection unit Due to the height difference of (7), a difference occurs between the flow rate of the second gas and the flow rate of the first gas injected toward the substrate 200. In order to reduce this flow rate difference, the second injection hole 62 may be formed in a smaller size 62D than the first injection hole 52 . That is, the size 62D of the second injection hole 62 is smaller than the size 52D of the first injection hole 52 . Accordingly, the flow rate of the second gas injected into the second injection part 8 through the second injection hole 62 is the first injection part 7 through the first injection hole 52. It becomes smaller than the flow rate of the first gas injected into. Therefore, in the substrate processing apparatus 1 according to the present invention, even if the second injection member 61 is disposed at a lower position than the first injection member 51, the second gas injected toward the substrate 200 It is possible to reduce the difference between the flow rate of the first gas and the flow rate of the first gas. When each of the second injection hole 62 and the first injection hole 52 is formed in a cylindrical shape, the diameter 62D of the second injection hole 62 is the diameter of the first injection hole 52 ( 52D) can be implemented in a smaller size.

The second injection member 61 may be detachably coupled to the chamber 100 . Accordingly, in the substrate processing apparatus 1 according to the present invention, the size difference between the first injection hole 52 and the second injection hole 62 can be adjusted by replacing the second injection member 61. By being implemented to be, it is possible to change the flow rate of the second gas based on the flow rate of the first gas.

For example, when a process in which the first gas and the second gas are used at the same flow rate is changed to a process in which the second gas is used at a higher flow rate than the first gas, the second injection member ( 61) may be replaced with a larger size 62D of the second injection hole 62. Accordingly, the substrate processing apparatus 1 according to the present invention increases the flow rate of the second gas injected into the second injection unit 8 through replacement of the second injection member 61, thereby increasing the substrate 200 ) It is possible to increase the flow rate of the second gas injected toward.

For example, when the process in which the first gas and the second gas are used at the same flow rate is changed to a process in which the second gas is used at a smaller flow rate than the first gas, the second injection member ( 61) may be replaced with a smaller size 62D of the second injection hole 62. Accordingly, the substrate processing apparatus 1 according to the present invention reduces the flow rate of the second gas injected into the second injection unit 8 through replacement of the second injection member 61, thereby reducing the substrate 200 ) It is possible to reduce the flow rate of the second gas injected toward.

As described above, in the substrate processing apparatus 1 according to the present invention, the second injection member 61 is detachably coupled to the chamber 100, so that the flow rate of the first gas is based on the processing process. It is implemented to change the flow rate of the second gas. Accordingly, the substrate processing apparatus 1 according to the present invention can improve responsiveness to the change of the processing process and improve versatility applicable to various processing processes. The second injection member 61 may be detachably coupled to the chamber 100 using a fastening means such as a bolt.

Meanwhile, in the substrate processing apparatus 1 according to the present invention, the first injection member 51 may be detachably coupled to the chamber 100 . In this case, the substrate processing apparatus 1 according to the present invention replaces the first injection member 51 with one having a different size 52D of the first injection hole 52, so that the second injection hole 52 is replaced according to the treatment process. It is implemented to change the flow rate of the first gas based on the flow rate of the gas. The first injection member 51 may be detachably coupled to the chamber 100 using a fastening means such as a bolt. In the substrate processing apparatus 1 according to the present invention, both the first injection member 51 and the second injection member 61 may be detachably coupled to the chamber 100 .

Referring to FIGS. 2 and 7 , the first injection unit 7 injects the first gas through the first electrode 3 . The first injection unit 7 may be connected to the first injection unit 5 . The first gas injected by the first injection unit 5 into the first injection unit 7 may be injected toward the seating table 2 while flowing along the first injection unit 7 .

The first injection unit 7 may include a first injection member 71 .

The first injection member 71 is disposed inside the first electrode 3 . The first injection member 71 may function as a passage through which the first gas injected from the first injection unit 5 flows. The first injection member 71 may be formed to extend along the first axial direction (X-axis direction). Accordingly, the first gas injected into the first injection member 71 may flow in the first axial direction (X-axis direction) along the first injection member 71 . The first injection member 71 may be implemented as a pipe, a tube, or the like. In this case, the first injection member 71 may be coupled to the first electrode 3 so as to be disposed inside the first electrode 3 . The first injection member 71 may be implemented to be disposed inside the first electrode 3 by forming a groove inside the first electrode 3 . In this case, the substrate processing apparatus 1 according to the present invention controls the temperature of the first electrode 3 when it is necessary to adjust the temperature of the first gas flowing along the first spray member 71. The temperature of the first gas may be directly adjusted. Therefore, the substrate processing apparatus 1 according to the present invention can improve the ease and accuracy of the operation of adjusting the temperature of the first gas.

The first injection part 7 may include a first injection hole 72 .

The first injection hole 72 injects the first gas toward the seating table 2 . The first injection hole 72 may be connected to the first injection member 71 . Accordingly, the first gas flowing along the first injection member 71 may be injected toward the seating table 2 through the first injection hole 72. The first injection hole 72 One end may be connected to the first injection member 71 and the other end may be formed to pass through the first electrode 3 . When the first injection member 71 is formed parallel to the first axial direction (X-axis direction), the first injection hole 72 may be formed parallel to the vertical direction (Z-axis direction). there is.

The first injection unit 7 may include a plurality of first injection holes 72 . The first injection holes 72 may be spaced apart from each other along the first axial direction (X-axis direction). Accordingly, the first spraying hole 72 may spray the first gas to different parts of the substrate 200 supported on the seating table 2 . Each of the first injection holes 72 may be connected to different parts of the first injection member 71 . Accordingly, the first gas flows in the first axial direction (X-axis direction) along the first injection member 71 and is injected toward the seating table 2 through the first injection holes 72. can

As the plurality of first injection holes 72 are provided, the first injection part 7 injects the first gas toward the substrate 200 as a whole based on the first axial direction (X-axis direction). It can be implemented to spray. The first injection unit ( 7) may include a plurality of the first injection member 71.

The first injection members 71 may be disposed at positions spaced apart from each other along the second axial direction (Y-axis direction). The second axial direction (Y-axis direction) and the first axial direction (X-axis direction) are axial directions disposed perpendicular to each other on one plane. A plurality of first injection holes 72 may be connected to each of the first injection members 71 . Accordingly, the first injection members 71 may inject the first gas toward the seating table 2 through the first injection holes 72 . Therefore, the substrate processing apparatus 1 according to the present invention can not only inject the first gas toward the substrate 200 as a whole with respect to the first axis direction (X-axis direction), but also the second axis The first gas may be sprayed toward the entire substrate 200 based on the direction (Y-axis direction). Accordingly, the substrate processing apparatus 1 according to the present invention is implemented to inject the first gas toward the entire surface of the substrate 200 placed on the seating table 2 . The first injection holes 72 may be formed to pass through the protrusion electrode 31 . In this case, the first gas may flow toward the seating table 2 through the opening 41 after being injected toward the opening 41 through the first injection holes 72 .

The first injection unit 7 may include a first supply member 73 . The first supply member 73 is coupled to the inlet of the first spray member 71 . The first supply member 73 may supply the first gas injected from the first injection unit 5 to the inside of the first injection member 71 . The first supply member 73 may include a first supply hole 74 through which the first gas flows to be supplied to the first injection member 71 . The first supply hole 74 may be formed to pass through the first supply member 73 . The first supply hole 74 may be connected to the first injection member 71 . Accordingly, the first gas injected from the first injection unit 5 passes through the first supply member 73 through the first supply hole 74 and is supplied to the first injection member 71. It can be. The first supply member 73 may be coupled to the first electrode 3 such that the first supply hole 74 is connected to the first spray member 71 .

When the first injection unit 7 includes a plurality of first injection members 71 , the first injection unit 7 may include a plurality of first supply members 73 . The first supply members 73 may be coupled to the inlet of each of the first spray members 71 . In this case, the first injection unit 7 may include a first distribution member 70 . The first distribution member 70 distributes the first gas injected from the first injection unit 5 to each of the first supply members 73 . Accordingly, the substrate processing apparatus 1 according to the present invention supplies the first gas to the first supply members 73 and the first injection members 71 using one first injection unit 5. It can be implemented to supply. The first distribution member 70 may be connected to each of the first injection unit 5 and the first supply member 73 . In this case, the first distribution member 70 may be connected to each of the first supply holes 74 of the first supply members 73 . The first distribution member 70 may be formed in the chamber 100 . In this case, the first injection unit 5 may be coupled to the chamber 100 so as to be connected to the first distribution member 70 . The first supply members 73 may be coupled to the first electrode 3 to be connected to the first distribution member 70 and the first spray members 71 . The first distribution member 70 may be disposed between the first injection unit 5 and the first supply member 73 . The first distribution member 70 may be formed in the chamber 100 to extend in the second axial direction (Y-axis direction).

The first distribution member 70 may function as a passage through which the first gas injected from the first injection unit 5 is distributed to each of the first supply members 73 . The first distribution member 70 may be disposed inside the chamber 100 . The first distribution member 70 may be implemented to be disposed inside the chamber 100 by forming a groove inside the chamber 100 . The first distribution member 70 may be implemented as a pipe, a tube, or the like. In this case, the first distribution member 70 may be coupled to the chamber 100 so as to be disposed inside the chamber 100 .

The volume of the first distribution member 70 may be larger than the sum of the volumes of the first spray members 71 . In this case, the first distribution member 70 may be formed to have a larger volume than the sum of the volumes of each of the first injection members 71 . In a comparative example in which the volume of the first distribution member 70 is smaller than the sum of the volumes of each of the first injection members 71, the first gas is supplied to each of the first injection members 71. cannot be supplied uniformly. This is because the flow rate of the first gas that can be maximally filled in the first distribution member 70 is smaller than the total flow rate of the first gas to be supplied to the first spray members 71 . Unlike this, in the embodiment, the flow rate of the first gas that can be maximally filled in the first distribution member 70 is greater than the total flow rate of the first gas to be supplied to the first injection members 71. Thus, the first gas can be more uniformly supplied to each of the first injection members 71 through the first distribution member 70 when compared to the comparative example. Here, the volume of the first distribution member 70 is the first distribution member 70 from the portion where the first distribution member 70 comes into contact with the first injection unit 5, the first distribution member 70 is the first supply member 73 ) is based on the part that touches. That is, the volume of the first distribution member 70 does not include the volume of the first injection unit 5 and the volume of the first supply member 73 . The volume of each of the first injection members 71 does not include the volume of the first supply member 73 and the volume of the first injection hole 72 .

7 and 8, in the first injection part 7, the first injection members 71 are formed to have the same length in the first axial direction (X-axis direction) and in the second axial direction. It may be implemented to be disposed at positions spaced apart from each other along (Y-axis direction). In this case, the first gas injected by the first injection unit 5 gradually decreases in flow rate while flowing in the second axial direction (Y-axis direction) through the first distribution member 70 . Accordingly, based on the second axial direction (Y-axis direction), the first supply member 73 is the first injection member 71 according to the distance difference from the first injection part 5 A difference occurs in the flow rate of the first gas supplied to the fields.

In order to reduce the difference in the flow rate of the first gas, the first supply members 73 have a large distance from the first injection part 5 based on the second axis direction (Y axis direction) The larger the size of the first supply hole 74 can be implemented. The distance separated from the first injection unit 5 may correspond to a distance separated from the first injection member 51 .

For example, as shown in FIG. 8, the first supply member 73' spaced apart from the first injection member 51 by a first separation distance 73L' based on the second axis direction (Y-axis direction) ), and a first supply member 73" spaced apart from the first injection member 51 by a second separation distance 73L" may be disposed. The second separation distance 73L" is greater than the first separation distance 73L'. In this case, the first supply hole 74" of the first supply member 73" is the first supply hole 74". It may be implemented larger than the first supply hole 74' of the member 73'. That is, the size (74D") of the first supply hole 74" is equal to the first supply hole 74'. It may be implemented larger than the size (74D') of .

Accordingly, in the substrate processing apparatus 1 according to the present invention, the first supply member 73″ is spaced apart from the first injection member 51 at a greater distance than the first supply member 73′. Even if arranged, the first supply member (73, '73") can reduce the difference in the flow rate of the first gas supplied to each of the first injection member (71, shown in FIG. 7). Therefore, the substrate processing apparatus 1 according to the present invention has a separation distance (73L', 73L") of the first supply members (73', 73") based on the second axis direction (Y-axis direction). Due to the difference, a deviation in a flow rate of the first gas injected toward the substrate 200 based on the second axis direction (Y axis direction) may be reduced. When each of the first supply holes 74' and 74" is formed in a cylindrical shape, the diameter 74D" of the first supply hole 74" is the diameter 74D of the first supply hole 74'. ') The first injection members 71 are formed to have the same length as each other in the first axial direction (X-axis direction) and along the second axial direction (Y-axis direction). When implemented to be disposed at positions spaced apart from each other, the first electrode 3 may be formed in a rectangular plate shape as a whole. Thus, it may be coupled to the chamber 100 so as to be located at a point spaced apart from both side surfaces of the first electrode 3 by the same distance.

2, 9 and 10, in the first injection part 7, the first injection members 71 are formed to have different lengths in the first axial direction (X-axis direction), and the first injection part 7 It may be implemented to be disposed at positions spaced apart from each other along two axial directions (Y-axis direction). In this case, the first gas injected by the first injection unit 5 is supplied to the first injection members 71 through the first supply members 73, and then the first gas is supplied in the first axial direction (X axis). direction) and is sprayed toward the substrate (200, shown in FIG. 2) while flowing at different distances. Accordingly, a difference in the flow rate of the first gas sprayed from the first spraying members 71 toward the substrate 200 may occur according to a difference in length of the first spraying members 71 .

In order to reduce the difference in the flow rate of the first gas, the first supply members 73 are coupled to the first injection member 71 having a long length based on the first axial direction (X-axis direction). The first supply hole 74 may have a larger size.

For example, as shown in FIG. 10, a first spray member 71' formed of a first length 71L' and a second length 71L" based on the first axial direction (X-axis direction) The first injection member 71" may be disposed to be spaced apart along the second axis direction (Y axis direction). The second length 71L" is longer than the first length 71L'. In this case, the first supply hole of the first supply member 73" coupled to the first spray member 71". (74") may be larger than the first supply hole 74' of the first supply member 73' coupled to the first injection member 71'. That is, the size 74D" of the first supply hole 74" may be larger than the size 74D' of the first supply hole 74'.

Accordingly, in the substrate processing apparatus 1 according to the present invention, the first spraying member 71 "is larger than the first spraying member 71' based on the first axial direction (X-axis direction). Even if formed in a long length, the difference in the flow rate of the first gas sprayed toward the substrate 200 (shown in FIG. 2) by the first spray members 71' and 71" can be reduced. Therefore, in the substrate processing apparatus 1 according to the present invention, due to the length difference between the first spray members 71' and 71" based on the first axis direction (X-axis direction), the second axis It is possible to reduce the deviation of the flow rate of the first gas injected toward the substrate 200 based on the direction (Y-axis direction). Each of the first supply holes 74' and 74" has a cylindrical shape. , the diameter 74D" of the first supply hole 74" may be larger than the diameter 74D' of the first supply hole 74'.

On the other hand, the first injection members 71 are formed to have different lengths in the first axial direction (X-axis direction) and are implemented to be disposed at positions spaced apart from each other along the second axial direction (Y-axis direction) In this case, as shown in FIG. 9, both ends of the first spray members 71 are located at different positions along the length of the first spray members 71 based on the first axial direction (X-axis direction). can be placed. In this case, the first distribution member 70 may be formed in a curved shape so as to correspond to one end of the first injection members 71 . 9 shows that the first electrode 3 is formed in a disk shape as a whole, but is not limited thereto, and the first electrode 3 may be formed in a rectangular plate shape as a whole.

Referring to FIGS. 7 to 10 , the substrate processing apparatus 1 according to the present invention may be implemented such that the first supply members 73 are detachably coupled to the first electrode 3 . Accordingly, in the substrate processing apparatus 1 according to the present invention, the difference in size between the first supply holes 74 is adjusted by replacing the first supply members 73, so that the second axial direction (Y axis) direction), deviation of the flow rate of the first gas sprayed to the substrate 200 may be reduced. For example, the first supply members 73 may be replaced in order to reduce the deviation of the flow rate of the first gas generated according to the separation distance from the first injection unit 5 . For example, the first supply members 73 may be replaced in order to reduce a deviation in the flow rate of the first gas generated according to a difference in length of the first injection members 71 . In this case, in the replacement of the first supply members 73, the difference in length of the first injection members 71 may be preferentially considered rather than the separation distance from the first injection part 5. The first supply members 73 may be detachably coupled to the first electrode 3 using fastening means such as bolts.

Referring to FIGS. 2 and 11 , the second injection unit 8 injects the second gas through the first electrode 3 . The second injection unit 8 may be connected to the second injection unit 6 . The second gas injected by the second injection unit 6 into the second injection unit 8 may be injected toward the seating table 2 while flowing along the second injection unit 8 .

The second injection unit 8 may include a second injection member 81 .

The second injection member 81 is disposed inside the first electrode 3 . The second injection member 81 may function as a passage through which the second gas injected from the second injection unit 6 flows. The second spray member 81 may be formed to extend along the first axial direction (X-axis direction). Accordingly, the second gas injected into the second injection member 81 may flow in the first axial direction (X-axis direction) along the second injection member 81 . The second injection member 81 may be implemented as a pipe, a tube, or the like. In this case, the second injection member 81 may be coupled to the first electrode 3 so as to be disposed inside the first electrode 3 . The second injection member 81 may be implemented to be disposed inside the first electrode 3 by forming a groove inside the first electrode 3 . In this case, the substrate processing apparatus 1 according to the present invention adjusts the temperature of the first electrode 3 when it is necessary to adjust the temperature of the second gas flowing along the second spray member 81. The temperature of the second gas may be directly adjusted. Therefore, the substrate processing apparatus 1 according to the present invention can improve the ease and accuracy of the operation of adjusting the temperature of the second gas.

The second injection part 8 may include a second injection hole 82 .

The second injection hole 82 injects the second gas toward the seating table 2 . The second injection hole 82 may be connected to the second injection member 81 . Accordingly, the second gas flowing along the second injection member 81 may be injected toward the seating table 2 through the second injection hole 82. The second injection hole 82 One end may be connected to the second spray member 81 and the other end may be formed to pass through the first electrode 3 . When the second injection member 81 is formed parallel to the first axial direction (X-axis direction), the second injection hole 82 may be formed parallel to the vertical direction (Z-axis direction). there is.

The second injection unit 8 may include a plurality of second injection holes 82 . The second injection holes 82 may be spaced apart from each other along the first axial direction (X-axis direction). Accordingly, the second spraying hole 82 may spray the second gas to different parts of the substrate 200 supported on the seating table 2 . Each of the second injection holes 82 may be connected to different parts of the second injection member 81 . Accordingly, the second gas flows in the first axial direction (X-axis direction) along the second injection member 81 and is injected toward the seating table 2 through the second injection holes 82. can As shown in FIG. 2 , the second injection hole 82 and the first injection hole 72 may be alternately disposed in plurality in the first axial direction (X-axis direction).

As the second injection holes 82 are provided in plurality, the second injection part 8 spreads the second gas toward the substrate 200 as a whole based on the first axial direction (X-axis direction). It can be implemented to spray. In order to inject the second gas toward the substrate 200 as a whole based on a second axial direction (Y-axis direction) perpendicular to the first axial direction (X-axis direction), the second injection unit ( 8) may include a plurality of second spray members 81.

The second injection members 81 may be disposed at positions spaced apart from each other along the second axial direction (Y-axis direction). A plurality of second injection holes 82 may be connected to each of the second injection members 81 . Accordingly, the second injection members 81 may inject the second gas toward the seating table 2 through the second injection holes 82 . Therefore, the substrate processing apparatus 1 according to the present invention can not only inject the second gas toward the substrate 200 as a whole with respect to the first axis direction (X-axis direction), but also the second axis The second gas may be sprayed toward the entire substrate 200 based on the direction (Y-axis direction). Accordingly, the substrate processing apparatus 1 according to the present invention is implemented to inject the second gas toward the entire surface of the substrate 200 placed on the seating table 2 . The second injection holes 82 may be disposed above the second electrode 4 . In this case, after the second gas is injected between the first electrode 3 and the second electrode 4 through the second injection holes 82, the seating table ( 2) can flow.

The second injection unit 8 may include a second supply member 83 . The second supply member 83 is coupled to the inlet of the second spray member 81 . The second supply member 83 may supply the second gas injected from the second injection unit 6 to the inside of the second injection member 81 . The second supply member 83 may include a second supply hole 84 through which the second gas flows to be supplied to the second injection member 81 . The second supply hole 84 may be formed to pass through the second supply member 83 . The second supply hole 84 may be connected to the second injection member 81 . Accordingly, the second gas injected from the second injection unit 6 passes through the second supply member 83 through the second supply hole 84 and is supplied to the second injection member 81. It can be. The second supply member 83 may be coupled to the first electrode 3 such that the second supply hole 84 is connected to the second spray member 81 .

When the second injection unit 8 includes a plurality of second injection members 81 , the second injection unit 8 may include a plurality of second supply members 83 . The second supply members 83 may be coupled to the inlet of each of the second spray members 81 . In this case, the second spraying unit 8 may include a second distribution member 80 . The second distribution member 80 distributes the second gas injected from the second injection unit 6 to each of the second supply members 83 . Accordingly, the substrate processing apparatus 1 according to the present invention supplies the second gas to the second supply members 83 and the second injection members 81 using one second injection unit 6. It can be implemented to supply. The second distribution member 80 may be connected to each of the second injection unit 6 and the second supply member 83 . In this case, the second distribution member 80 may be connected to each of the second supply holes 84 of the second supply members 83 . The second distribution member 80 may be formed in the chamber 100 . In this case, the second injection unit 6 may be coupled to the chamber 100 so as to be connected to the second distribution member 80 . The second supply members 83 may be coupled to the first electrode 3 so as to be connected to the second distribution member 80 and the second spray members 81 . The second distribution member 80 may be disposed between the second injection unit 6 and the second supply member 83 . The second distribution member 80 may be formed in the chamber 100 to extend in the second axial direction (Y-axis direction).

The second distribution member 80 may function as a passage through which the second gas injected from the second injection unit 6 is distributed to each of the second supply members 83 . The second distribution member 80 may be disposed inside the chamber 100 . The second distribution member 80 may be implemented to be disposed inside the chamber 100 by forming a groove inside the chamber 100 . The second distribution member 80 may be implemented as a pipe, a tube, or the like. In this case, the second distribution member 80 may be coupled to the chamber 100 so as to be disposed inside the chamber 100 .

The volume of the second distribution member 80 may be greater than the sum of the volumes of the second spray members 81 . In this case, the second distribution member 80 may be formed to have a larger volume than the sum of the volumes of each of the second spray members 81 . In a comparative example in which the volume of the second distribution member 80 is smaller than the sum of the volumes of each of the second injection members 81, the second gas is supplied to each of the second injection members 81. cannot be supplied uniformly. This is because the flow rate of the second gas that can be maximally filled in the second distribution member 80 is smaller than the total flow rate of the second gas to be supplied to the second spray members 81 . Unlike this, in the embodiment, the flow rate of the second gas that can be maximally filled in the second distribution member 80 is greater than the total flow rate of the second gas to be supplied to the second injection members 81. Thus, the second gas can be more uniformly supplied to each of the second spraying members 81 through the second distribution member 80 when compared to the comparative example. Here, the volume of the second distribution member 80 is the second distribution member 80 from the portion where the second distribution member 80 comes into contact with the second injection unit 6 to the second supply member 83 ) is based on the part that touches. That is, the volume of the second distribution member 80 does not include the volume of the second injection unit 6 and the volume of the second supply member 83 . The volume of each of the second injection members 81 does not include the volume of the second supply member 83 and the volume of the second injection hole 82 .

Referring to FIGS. 11 and 12, the second injection part 8 has the second injection members 81 having the same length in the first axial direction (X-axis direction) and the second axial direction. It may be implemented to be disposed at positions spaced apart from each other along (Y-axis direction). In this case, the second gas injected by the second injection unit 6 gradually decreases in flow rate while flowing in the second axial direction (Y-axis direction) through the second distribution member 80 . Accordingly, based on the second axial direction (Y-axis direction), the second supply member 83 is the second injection member 81 according to the distance difference from the second injection part 6 A difference occurs in the flow rate of the second gas supplied to the fields.

In order to reduce the difference in flow rate of the second gas, the second supply members 83 have a large distance from the second injection part 6 based on the second axial direction (Y-axis direction) The larger the size of the second supply hole 84 can be implemented. The distance separated from the second injection unit 6 may correspond to a distance separated from the second injection member 61 .

For example, as shown in FIG. 12, the second supply member 83' spaced apart from the second injection member 61 by a third separation distance 83L' based on the second axis direction (Y-axis direction) ), and a second supply member 83" spaced apart from the second injection member 61 by a fourth separation distance 83L" may be disposed. The fourth separation distance 83L" is greater than the third separation distance 83L'. In this case, the second supply hole 84" of the second supply member 83" is the second supply hole 84". It can be implemented larger than the second supply hole 84' of the member 83'. That is, the size (84D") of the second supply hole 84" is the second supply hole 84'. It may be implemented larger than the size (84D') of .

Accordingly, in the substrate processing apparatus 1 according to the present invention, the second supply member 83″ is spaced apart from the second injection member 61 at a greater distance than the second supply member 83′. Even if arranged, the difference in flow rate of the second gas supplied to each of the second injection members 83' and 83" by the second supply members 83' and 83" can be reduced. Therefore, the substrate processing apparatus 1 according to the present invention has a separation distance (83L', 83L") of the second supply members (83', 83") based on the second axis direction (Y-axis direction). Due to the difference, deviation of the flow rate of the second gas sprayed toward the substrate 200 based on the second axis direction (Y axis direction) may be reduced. When each of the second supply holes 84' and 84" is formed in a cylindrical shape, the diameter 84D" of the second supply hole 84" is the diameter 84D of the second supply hole 84'. ') The second injection members 81 are formed to have the same length as each other in the first axial direction (X-axis direction) and along the second axial direction (Y-axis direction). When implemented to be disposed at positions spaced apart from each other, the first electrode 3 may be formed in a rectangular plate shape as a whole, and the second injection member 61 is based on the second axis direction (Y axis direction) Thus, it may be coupled to the chamber 100 so as to be located at a point spaced apart from both side surfaces of the first electrode 3 by the same distance.

2, 13 and 14, the second spraying part 8 is formed with the second spraying members 81 having different lengths in the first axial direction (X-axis direction) and the second spraying member 81. It may be implemented to be disposed at positions spaced apart from each other along two axial directions (Y-axis direction). In this case, the second gas injected by the second injection unit 6 is supplied to the second injection members 81 through the second supply members 83 and then the first axial direction (X-axis). direction) and is sprayed toward the substrate (200, shown in FIG. 2) while flowing at different distances. Accordingly, a difference may occur in the flow rate of the second gas sprayed toward the substrate 200 from the second spray members 81 according to the length difference between the second spray members 81 .

In order to reduce the difference in the flow rate of the second gas, the second supply members 83 are coupled to the second injection member 81 having a long length based on the first axial direction (X-axis direction). The second supply hole 84 may have a larger size.

For example, as shown in FIG. 14, a second spray member 81' formed of a third length 81L' and a fourth length 81L" based on the first axial direction (X-axis direction) Second injection members 81" may be disposed to be spaced apart along the second axial direction (Y-axis direction). The fourth length 81L" is longer than the third length 81L'. In this case, the second supply hole of the second supply member 83" coupled to the second spray member 81". (84") may be larger than the second supply hole 84' of the second supply member 83' coupled to the second injection member 81'. That is, the size 84D" of the second supply hole 84" may be larger than the size 84D' of the second supply hole 84'.

Accordingly, in the substrate processing apparatus 1 according to the present invention, the second spraying member 81 "is larger than the second spraying member 81' based on the first axial direction (X-axis direction). Even if formed in a long length, the difference in the flow rate of the second gas sprayed toward the substrate 200 (shown in FIG. 2) by the second spray members 81' and 81" can be reduced. Therefore, in the substrate processing apparatus 1 according to the present invention, due to the length difference between the second spray members 81' and 81" based on the first axis direction (X-axis direction), the second axis It is possible to reduce the deviation of the flow rate of the second gas injected toward the substrate 200 based on the direction (Y-axis direction). Each of the second supply holes 84' and 84" has a cylindrical shape. , the diameter 84D" of the second supply hole 84" may be larger than the diameter 84D' of the second supply hole 84'.

On the other hand, the second injection members 81 are formed to have different lengths in the first axial direction (X-axis direction) and are implemented to be disposed at positions spaced apart from each other along the second axial direction (Y-axis direction) 13, both ends of the second spray members 81 are located at different positions along the length of the second spray members 81 based on the first axial direction (X-axis direction) can be placed. In this case, the second distribution member 80 may be formed in a curved shape so as to correspond to one end of the second injection members 81 . 13 shows that the first electrode 3 is formed in a disk shape as a whole, but is not limited thereto, and the first electrode 3 may be formed in a rectangular plate shape as a whole.

Referring to FIG. 15 , the second spray member 81 and the first spray member 71 may be alternately disposed in plurality in the second axial direction (Y-axis direction). In FIG. 15, the solid lines indicate the positions of the first injection member 51 and the first injection members 71 through which the first gas flows, and the dotted lines indicate the positions of the second injection member 61 and the second injection member 61 through which the second gas flows. The positions of the two injection members 81 are indicated. Based on the second axial direction (Y-axis direction), the second spray member 81 and the first spray member 71 are spaced apart from each other at a first distance S1 and may be alternately arranged in plurality. there is. Accordingly, the second injection unit 8 and the first injection unit 7 may implement separate flow paths so that the second gas and the first gas are not mixed with each other.

When the second injection member 81 and the first injection member 71 are arranged to be spaced apart by the first distance S1 based on the second axial direction (Y-axis direction), the second injection member 61 and the first injection member 51 may be disposed to be spaced apart from each other by the first distance S1 based on the second axis direction (Y axis direction). That is, based on the second axial direction (Y-axis direction), the second injection member 61 and the first injection member 51 are the second injection member 81 and the first injection member ( 71) are arranged to be spaced apart from each other at the same interval. Accordingly, the second gas injected by the second injection member 61 and the first gas injected by the first injection member 51 are the same distance from each other along the second axis direction (Y axis direction). It may flow to and be distributed to the second injection members 81 and the first injection member 71 . Therefore, the substrate processing apparatus 1 according to the present invention can reduce the deviation of the flow rate ratio of the second gas and the first gas for each part of the substrate 200 .

Referring to FIGS. 16 and 17 , the second spray member 81 and the first spray member 71 may be disposed at positions spaced apart from the seating table 2 at different heights. The first spraying member 71 may be disposed at a position spaced apart from the seating table 2 at a third height 71H. Accordingly, the first spray member 71 may be disposed at a higher position than the seating table 2 based on the vertical direction (Z-axis direction). The second spray member 81 may be disposed at a position spaced apart from the seating table 2 at a fourth height 81H. The fourth height 81H is lower than the third height 71H. Accordingly, the second spray member 81 may be disposed at a position spaced apart from the seating table 2 at a lower height than the first spray member 71 . Therefore, since the second injection member 81 and the first injection member 71 can be disposed at a position where they do not interfere with each other, a separate flow path can be implemented so that the second gas and the first gas do not mix with each other. can

When the second spraying member 81 is disposed at a lower position than the first spraying member 71, the second spraying member 81 is lower than the first spraying member 71. 2) can be placed closer. Accordingly, when the second gas and the first gas having the same flow rate are supplied to the second injection member 81 and the first injection member 71, the second injection member 81 and the first injection member 71 Due to the difference in height of the height 71, a difference occurs between the flow rate of the second gas and the flow rate of the first gas injected toward the substrate 200. In order to reduce this difference in flow rate, the second supply hole 84 of the second supply member 83 coupled to the second injection member 81, the first supply coupled to the first injection member 71 Compared to the first supply hole 74 of the member 73, it may be formed in a smaller size 84D. That is, the size 84D of the second supply hole 84 is smaller than the size 74D of the first supply hole 74 . Accordingly, the flow rate of the second gas supplied to the second injection member 81 through the second supply hole 84 is transferred to the first injection member 71 through the first supply hole 74. It becomes smaller than the flow rate of the supplied first gas. Therefore, in the substrate processing apparatus 1 according to the present invention, even if the second spraying member 81 is disposed at a lower position than the first spraying member 71, the second gas sprayed toward the substrate 2000 It is possible to reduce the difference between the flow rate and the flow rate of the first gas When the second supply hole 84 and the first supply hole 74 are each formed in a cylindrical shape, the second supply hole 84 The diameter 84D of may be implemented smaller than the diameter 74D of the first supply hole 74 .

The second supply member 83 may be detachably coupled to the first electrode 3 . Accordingly, in the substrate processing apparatus 1 according to the present invention, the size difference between the second supply hole 84 and the first supply hole 74 can be adjusted by replacing the second supply member 83. By being implemented to be, it is possible to change the flow rate of the second gas based on the flow rate of the first gas.

For example, when a process in which the first gas and the second gas are used at the same flow rate is changed to a process in which the second gas is used at a higher flow rate than the first gas, the second supply member ( 83) may be replaced with a larger size 84D of the second supply hole 84. Accordingly, the substrate processing apparatus 1 according to the present invention increases the flow rate of the second gas supplied to the second spray member 81 through replacement of the second supply member 83, thereby increasing the substrate 200 ) It is possible to increase the flow rate of the second gas injected toward.

For example, when a process in which the first gas and the second gas are used at the same flow rate is changed to a process in which the second gas is used at a smaller flow rate than the first gas, the second supply member ( 83) may be replaced with a smaller size 84D of the second supply hole 84. Accordingly, the substrate processing apparatus 1 according to the present invention reduces the flow rate of the second gas supplied to the second spray member 81 through replacement of the second supply member 83, thereby reducing the substrate 200 ) It is possible to reduce the flow rate of the second gas injected toward.

As described above, in the substrate processing apparatus 1 according to the present invention, the second supply member 83 is detachably coupled to the first electrode 3, so that the flow rate of the first gas depends on the processing process. It is implemented to change the flow rate of the second gas based on. Accordingly, the substrate processing apparatus 1 according to the present invention can improve responsiveness to the change of the processing process and improve versatility applicable to various processing processes. The second supply member 83 may be detachably coupled to the first electrode 3 using a fastening means such as a bolt.

Meanwhile, in the substrate processing apparatus 1 according to the present invention, the first supply member 73 may be detachably coupled to the first electrode 3 . In this case, the substrate processing apparatus 1 according to the present invention replaces the first supply member 73 with one having a different size 74D of the first supply hole 74, thereby replacing the second supply hole 74 according to the processing process. It is implemented to change the flow rate of the first gas based on the flow rate of the gas. The first supply member 73 may be detachably coupled to the first electrode 3 using a fastening means such as a bolt. The substrate processing apparatus 1 according to the present invention may be implemented such that both the first supply member 73 and the second supply member 83 are detachably coupled to the first electrode 3 .

Referring to FIG. 18 , the substrate processing apparatus 1 according to the present invention may include an exhaust port 110 .

The exhaust port 110 exhausts the inside of the chamber 100 . The exhaust port 110 may be formed to pass through the chamber 100 . The exhaust port 110 may be connected to an exhaust unit 120 disposed outside the chamber 100 . The exhaust unit 120 may exhaust the inside of the chamber 100 through the exhaust port 110 by generating a suction force.

Here, when the first injection part 5 and the second injection part 6 are disposed on one side 3a of the first electrode 3, one side 210 of the substrate 200 is In addition to corresponding to one side 3a of the first electrode 3, the other side 220 of the substrate 200 may be placed on the seating table 2 so as to correspond to the other side 3c of the first electrode 3. there is. In this case, since the first injection part 5 and the second injection part 6 inject the first gas and the second gas from one side 3a of the first electrode 3, the substrate ( The flow rate ratio of the first gas and the second gas injected toward one side 210 of the substrate 200 and the flow rate ratio of the first gas and the second gas injected toward the other side 220 of the substrate 200 are approximately equal. do. However, the flow rates of the first gas and the second gas injected toward one side 210 of the substrate 200 are equal to the flow rates of the first gas and the second gas injected toward the other side 220 of the substrate 200. will be more than Accordingly, in the case of a deposition process, a thicker thin film may be deposited on one side 210 of the substrate 200 . In the case of an etching process, more etching may be performed on one side 210 of the substrate 200 .

To solve this problem, the exhaust port 110 may be formed in the chamber 100 to exhaust the inside of the chamber 100 at a position corresponding to the other side 3c of the first electrode 3. Accordingly, in the substrate processing apparatus 1 according to the present invention, the first gas and the second gas injected from the one side 3a of the first electrode 3 toward the one side 210 of the substrate 200 It may be implemented to be exhausted by flowing toward the other side 220 of the substrate 200 . Therefore, the substrate processing apparatus 1 according to the present invention provides the flow rate of the first gas and the second gas located on one side 210 of the substrate 200 and the second gas located on the other side 220 of the substrate 200. A deviation occurring between the flow rates of the first gas and the second gas can be reduced. Accordingly, when performing the deposition process, the substrate processing apparatus 1 according to the present invention can be implemented so that a thin film having a uniform thickness is deposited on the substrate 200 as a whole. In the case of performing an etching process, the substrate processing apparatus 1 according to the present invention may be implemented so that the entire substrate 200 is uniformly etched.

The exhaust port 110 may be formed to penetrate the bottom surface of the chamber 100 at a position corresponding to the other side 220 of the first electrode 3 . In this case, the exhaust port 110 may be formed to penetrate the bottom surface of the chamber 100 at a corresponding position between the seating table 2 and the chamber 100 .

Referring to FIG. 18 , the substrate processing apparatus 1 according to the present invention may include a temperature control unit 130 .

The temperature control unit 130 controls the temperature of the substrate 200 . The temperature control unit 130 may be coupled to the seating table 2 . The temperature control unit 130 may adjust the temperature of the substrate 200 placed on the seating table 2 by controlling the temperature of the seating table 2 . The temperature control unit 130 can control the temperature of the substrate 200 by circulating and moving the fluid for temperature control inside the seating table 2 . The temperature control unit 130 may control the temperature of the substrate 200 by applying power to the heating wire coupled to the inside of the seating table 2 .

Here, when the first injection part 5 and the second injection part 6 are disposed on one side 3a of the first electrode 3, the injection is directed toward one side 210 of the substrate 200. The flow rate ratio of the first gas and the second gas and the flow rate ratio of the first gas and the second gas injected toward the other side 220 of the substrate 200 are approximately equal. However, the flow rates of the first gas and the second gas injected toward one side 210 of the substrate 200 are equal to the flow rates of the first gas and the second gas injected toward the other side 220 of the substrate 200. will be more than Accordingly, in the case of a deposition process, a thicker thin film may be deposited on one side 210 of the substrate 200 . In the case of an etching process, more etching may be performed on one side 210 of the substrate 200 .

To solve this problem, the temperature control unit 130 may control the other side 220 of the substrate 200 to a higher temperature than the one side 210 of the substrate 200 . Accordingly, the temperature control unit 130 may increase the reactivity on the other side 220 of the substrate 200 compared to the reactivity on the one side 210 of the substrate 200 . Therefore, when performing the deposition process, the substrate processing apparatus 1 according to the present invention can be implemented so that a thin film having a uniform thickness is deposited on the substrate 200 as a whole. In the case of performing an etching process, the substrate processing apparatus 1 according to the present invention may be implemented so that the entire substrate 200 is uniformly etched.

The temperature control unit 130 adjusts the other side of the substrate 200 to a higher temperature by controlling the other side of the seating table 2 corresponding to the other side 220 of the substrate 200 to a higher temperature. can When the temperature control unit 130 uses the fluid for temperature control, the temperature control unit 130 may increase at least one of the temperature and flow rate of the fluid for temperature control that circulates through the other part. When the temperature control unit 130 uses a heating wire, the temperature control unit 130 may apply a higher current power to the other side. The temperature control unit 130 may be coupled to the resting table 2 so as to be disposed only on the other side.

The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and it is common in the technical field to which the present invention belongs that various substitutions, modifications, and changes are possible without departing from the technical spirit of the present invention. It will be clear to those who have knowledge of

1: substrate processing device 2: resting table
3: first electrode 4: second electrode
5: first injection part 6: second injection part
7: first injection unit 8: second injection unit
31: protruding electrode 41: opening
51: first injection member 52: first injection hole
61: second injection member 62: second injection hole
71: first injection member 72: first injection hole
73: first supply member 74: first supply hole
81: first injection member 82: second injection hole
83: second supply member 84: second supply hole
100: chamber 110: exhaust port
120: exhaust unit 130: temperature control unit

Claims (19)

chamber;
A resting table on which the substrate is placed;
a first electrode positioned above the seating table;
a second electrode positioned between the first electrode and the seating table;
a first injection unit for injecting a first gas through the first electrode;
a second injection unit for injecting a second gas through the first electrode;
a first injection unit for injecting the first gas into the first injection unit;
a second injection unit for injecting the second gas into the second injection unit; and
Includes a plurality of openings formed to pass through the second electrode;
The first injection part and the second injection part are disposed on the same side of the first electrode, respectively.
The first electrode and the second electrode are disposed spaced apart from each other,
The first gas injected by the first injection unit and the second gas injected by the second injection unit are supplied toward the seating table through the openings,
The first injection unit is disposed on one side of the first electrode so that the first gas injected into the first injection unit flows from one side of the first electrode to the other side,
The second injection unit is disposed on one side of the first electrode so that the second gas injected into the second injection unit flows from one side of the first electrode to the other side. According to claim 1,
The first injection unit and the second injection unit flow the first gas and the second gas in the same injection direction and inject them into the first injection unit and the second injection unit, respectively. . According to claim 1,
The first injection unit includes a first injection member connected to the first injection unit,
The second injection unit includes a second injection member connected to the second injection unit,
The first injection member is disposed at a position spaced apart from the resting table by a first distance based on the first axial direction,
The second injection member is a substrate processing apparatus, characterized in that disposed at a position spaced apart from the seat table by the first distance with respect to the first axial direction. According to claim 3,
The first injection member is disposed at a position spaced apart from the resting table at a first height,
The second injection member is a substrate processing apparatus, characterized in that disposed at a position spaced apart from the seating table at a second height lower than the first height. According to claim 4,
The first injection member includes a first injection hole through which the first gas flows to be injected into the first injection part,
The second injection member includes a second injection hole through which the second gas flows to be injected into the second injection part,
The second injection hole is configured such that the flow rate of the second gas injected into the second injection part is smaller than the flow rate of the first gas injected into the first injection part through the first injection hole. Substrate processing apparatus, characterized in that formed in a smaller size compared to. According to claim 1,
The first injection unit includes a first injection member connected to the first injection unit,
The second injection unit includes a second injection member connected to the second injection unit,
The first injection member includes a first injection hole through which the first gas flows to be injected into the first injection part,
The second injection member includes a second injection hole through which the second gas flows to be injected into the second injection unit, and is detachably coupled to the chamber. According to claim 1,
The first injection unit includes a plurality of first injection members disposed inside the first electrode, a plurality of first supply members coupled to an inlet of each of the first injection members, and a plurality of first injection members injected from the first injection unit. And a first distribution member for distributing a first gas to each of the first supply members,
The first supply members each include a first supply hole connected to each of the first distribution member and the first injection member. According to claim 7,
The first injection members are formed to have the same length along the first axial direction and are spaced apart from each other along the second axial direction perpendicular to the first axial direction,
The substrate processing apparatus according to claim 1 , wherein the size of the first supply hole increases as the distance between the first supply members and the first injection part increases based on the second axial direction. According to claim 7,
The first injection members are formed to have different lengths along the first axial direction and are spaced apart from each other along the second axial direction perpendicular to the first axial direction,
The substrate processing apparatus according to claim 1 , wherein the size of the first supply hole is larger as the first supply members are coupled to the first injection member having a longer length based on the first axial direction. According to claim 1,
The first injection unit includes a plurality of first injection members disposed inside the first electrode, a plurality of first supply members coupled to an inlet of each of the first injection members, and a plurality of first injection members injected from the first injection unit. And a first distribution member for distributing a first gas to each of the first supply members,
The substrate processing apparatus, characterized in that the volume of the first distribution member is larger than the sum of the volumes of the first injection members. According to claim 1,
The first injection unit includes a first injection member disposed inside the first electrode and a first supply member coupled to an inlet of the first injection member,
The second injection unit includes a second injection member disposed inside the first electrode and a second supply member coupled to an inlet of the second injection member,
The second spraying member is a substrate processing apparatus, characterized in that disposed at a position spaced apart from the resting table at a lower height than the first spraying member. According to claim 11,
The first supply member includes a first supply hole connected to the first injection member,
The second supply member includes a second supply hole connected to the second injection member,
The second supply hole is a substrate processing apparatus, characterized in that formed in a smaller size than the first supply hole. According to claim 1,
The first injection unit includes a first injection member disposed inside the first electrode and a first supply member coupled to an inlet of the first injection member,
The second injection unit includes a second injection member disposed inside the first electrode and a second supply member coupled to an inlet of the second injection member,
The first supply member includes a first supply hole connected to the first injection member,
The second supply member includes a second supply hole connected to the second injection member, and is detachably coupled to the first electrode. According to claim 1,
The first injection unit includes a first injection member extending along a first axial direction,
The second injection unit includes a second injection member extending along the first axial direction,
The first spraying member and the second spraying member are alternately arranged in plurality based on a second axial direction perpendicular to the first axial direction. According to claim 14,
The first injection unit includes a first injection member connected to the first injection unit,
The second injection unit includes a second injection member connected to the second injection unit,
The first injection member and the second injection member are spaced apart at intervals equal to the distances at which the first injection member and the second injection member are spaced apart from each other based on the second axial direction A substrate, characterized in that processing device. According to claim 14,
The first injection unit includes a first injection hole for injecting the first gas toward the seating table,
The second injection unit includes a second injection hole for injecting the second gas toward the seating table,
The first injection hole and the second injection hole are alternately arranged in plurality with respect to the first axial direction,
The first injection members are connected to the first injection holes to inject the first gas toward the seating table through the first injection holes;
The second injection members are connected to the first injection holes to inject the second gas toward the seating table through the second injection holes. According to claim 1,
Including an exhaust port for exhausting the inside of the chamber,
The exhaust port is a substrate processing apparatus, characterized in that formed in the chamber to exhaust the inside of the chamber at a position corresponding to the other side of the first electrode. According to claim 1,
A temperature control unit for controlling the temperature of the substrate;
The seating table is placed so that one side of the substrate corresponds to one side of the first electrode and the other side of the substrate corresponds to the other side of the first electrode,
The temperature control unit controls the other side of the substrate to a higher temperature than the one side of the substrate. chamber;
A resting table on which the substrate is placed;
a first electrode positioned above the seating table;
a second electrode positioned between the first electrode and the seating table;
a first injection unit for injecting a first gas through the first electrode;
a second injection unit for injecting a second gas through the first electrode;
a first injection unit for injecting the first gas into the first injection unit;
a second injection unit for injecting the second gas into the second injection unit; and
Includes a plurality of openings formed to pass through the second electrode;
The first injection unit includes a plurality of first injection members disposed inside the first electrode, and a first distribution member for supplying the first gas injected from the first injection unit to each of the first injection members. include,
The substrate processing apparatus, characterized in that the volume of the first distribution member is larger than the sum of the volumes of the first injection members.

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