KR20220053470A - Apparatus for Processing Substrate - Google Patents

Abstract

The present invention relates to a substrate processing device comprising: a process chamber; a first electrode positioned on an upper part of the process chamber; a second electrode positioned on a lower side of the first electrode, and comprising a plurality of openings; a plurality of protruding electrodes extending from the first electrode to the plurality of openings of the second electrode; and a substrate support part opposite to the second electrode, and supporting a substrate. Therefore, the present invention is capable of improving a quality of the finished substrate.

Description

Substrate processing equipment {Apparatus for Processing Substrate}

The present invention relates to a substrate processing apparatus for performing processing processes such as a deposition process and an etching process on a substrate.

In general, in order to manufacture a solar cell, a semiconductor device, a flat panel display, etc., a predetermined thin film layer, a thin film circuit pattern, or an optical pattern must be formed on a substrate. To this end, a deposition process for depositing a thin film of a specific material on a substrate, a photo process for selectively exposing the thin film using a photosensitive material, an etching process for selectively removing the thin film from the exposed portion to form a pattern, etc. The treatment process takes place.

A processing process for such a substrate is performed by a substrate processing apparatus. The substrate processing apparatus includes a process chamber providing a reaction space, a support part for supporting a substrate, and a gas injection part for spraying gas toward the support part. The substrate processing apparatus performs a processing process on the substrate using the source gas and the reaction gas injected by the gas injection unit. When such a processing process is performed, plasma generated between the gas injection unit and the substrate supported by the support unit is used.

Here, the uniformity of the processing process can be secured only when plasma is generated with a uniform intensity over the entire surface of the substrate facing the gas injection unit. However, in the prior art, there is a problem in that the quality of the substrate on which the processing process is completed is deteriorated as the intensity of plasma is partially changed due to process conditions such as the type of the processing process, the type of gas, and the temperature, and there is a deviation.

The present invention has been devised to solve the problems described above, and to provide a substrate processing apparatus capable of improving the quality of a substrate on which a processing process has been completed by improving the uniformity of plasma intensity.

In order to solve the problems as described above, the present invention may include the following configuration.

A substrate processing apparatus according to the present invention includes a process chamber providing a reaction space for processing a substrate; a substrate support for supporting the substrate; a first electrode installed inside the process chamber to face the substrate and including a plurality of protruding electrodes protruding toward the substrate; and a second electrode positioned below the first electrode and having a plurality of openings into which the protruding electrode is inserted.

In the substrate processing apparatus according to the present invention, among the protruding electrodes, the first protruding electrode disposed in the first region and the second protruding electrode disposed in the second region outside the first region may protrude to have different lengths. there is.

In the substrate processing apparatus according to the present invention, the first protruding electrode may protrude longer toward the substrate than the second protruding electrode.

In the substrate processing apparatus according to the present invention, the second protruding electrode may protrude longer toward the substrate than the first protruding electrode.

In the substrate processing apparatus according to the present invention, among the second electrodes, the second electrode of the first region and the second electrode of the second region may protrude toward the substrate by different lengths.

In the substrate processing apparatus according to the present invention, among the second electrodes, the second electrode of the first region and the second electrode of the second region may be spaced apart from each other by different distances from the substrate support part.

In the substrate processing apparatus according to the present invention, the second electrode of the first region may be spaced apart from the substrate support by a longer distance than the second electrode of the second region.

In the substrate processing apparatus according to the present invention, the second electrode of the second region may be spaced apart from the substrate support by a longer distance than the second electrode of the first region.

In the substrate processing apparatus according to the present invention, the first protruding electrode may include a first injection hole for injecting a first gas. The second protruding electrode may include a second injection hole for injecting a second gas. Areas of the first injection hole and the second injection hole may be different from each other.

In the substrate processing apparatus according to the present invention, the area of the first injection hole may be formed to be larger than the area of the second injection hole.

In the substrate processing apparatus according to the present invention, the area of the second injection hole may be formed to be larger than the area of the first injection hole.

In the substrate processing apparatus according to the present invention, the area may be a horizontal cross-sectional area.

In the substrate processing apparatus according to the present invention, at least one of the first protruding electrode and the second protruding electrode inserted into the opening may be on the same plane as a lower surface of the second electrode.

In the substrate processing apparatus according to the present invention, the first protruding electrode and the second protruding electrode may protrude to have the same length.

A substrate processing apparatus according to the present invention includes a process chamber providing a reaction space for processing a substrate; a substrate support for supporting the substrate; a first injection plate installed in the process chamber to face the substrate, the first injection plate protruding toward the substrate and including a plurality of projection passages for injecting a first gas; and a second injection plate positioned below the first injection plate, into which the protrusion passage is inserted, and having a plurality of injection holes for injecting the second gas. Among the protrusion flow paths, a first protrusion flow path disposed in a first area and a second protrusion flow path disposed in a second area outside the first area may protrude to have different lengths.

In the substrate processing apparatus according to the present invention, the first protruding passage may protrude longer toward the substrate than the second protruding passage.

In the substrate processing apparatus according to the present invention, the second protruding passage may protrude longer toward the substrate than the first protruding passage.

According to the present invention, the following effects can be achieved.

The present invention is implemented to control the intensity of plasma for each region, thereby improving the uniformity of plasma intensity over the entire surface of the substrate. Accordingly, the present invention can improve the quality of the substrate on which the processing process is completed.

The present invention is implemented to control the pressure and flow rate of the gas for each region, thereby improving the uniformity of the gas injected over the entire surface of the substrate. Accordingly, the present invention can improve the quality of the substrate on which the processing process is completed.

1 is a schematic side cross-sectional view of a substrate processing apparatus according to the present invention;
Figure 2 is a schematic side cross-sectional view showing an enlarged portion A of Figure 1 in the substrate processing apparatus according to the present invention;
3 is a schematic bottom view showing the lower surface of the first electrode in the substrate processing apparatus according to the present invention;
4 to 9 are schematic side cross-sectional views showing enlarged first electrodes, second electrodes, and protruding electrodes in the first region and the second region in the substrate processing apparatus according to the present invention;
10 is a schematic side cross-sectional view of a substrate processing apparatus according to a modified embodiment of the present invention;
11 is a schematic side cross-sectional view showing an enlarged portion B of FIG. 10 in a substrate processing apparatus according to a modified embodiment of the present invention;
12 is a schematic bottom view showing a lower surface of a first injection plate in a substrate processing apparatus according to a modified embodiment of the present invention;
13 and 14 are schematic side cross-sectional views showing enlarged first injection plates, second injection plates, and protrusion passages in the first region and the second region in the substrate processing apparatus according to a modified embodiment of the present invention;

Hereinafter, an embodiment of a substrate processing apparatus according to the present invention will be described in detail with reference to the accompanying drawings. 3, the protruding electrodes coupled to the lower surface of the first electrode are omitted. In FIGS. 4 to 9 , 13 , and 14 , the dashed-dotted line is an abbreviated line. 12, the protrusion passages coupled to the lower surface of the first injection plate are omitted.

Referring to FIG. 1 , a substrate processing apparatus 1 according to the present invention performs a processing process on a substrate S. As shown in FIG. The substrate S may be a silicon substrate, a glass substrate, a metal substrate, or the like. The substrate processing apparatus 1 according to the present invention may perform a deposition process of depositing a thin film on the substrate S, an etching process of removing a portion of the thin film deposited on the substrate S, and the like. For example, the substrate processing apparatus 1 according to the present invention may perform a deposition process such as CVD (Chemical Vapor Deposition) or ALD (Atomic Layer Deposition). Hereinafter, an embodiment in which the substrate processing apparatus 1 according to the present invention performs the deposition process will be described, but from this, the substrate processing apparatus 1 according to the present invention performs other processing processes such as the etching process. It will be apparent to those skilled in the art to which the present invention pertains to derive an embodiment.

The substrate processing apparatus 1 according to the present invention may include a process chamber 2 , a substrate support part 3 , and an electrode part 4 .

<Process Chamber>

Referring to FIG. 1 , the process chamber 2 provides a reaction space 100 . In the reaction space 100 , processing processes such as a deposition process and an etching process for the substrate S may be performed. The substrate support part 3 and the electrode part 4 may be disposed inside the process chamber 2 .

<Support part>

Referring to FIG. 1 , the substrate support part 3 supports the substrate S. The substrate support unit 3 may support one substrate (S) or a plurality of substrates (S). The substrate support part 3 may rotate about a support shaft (not shown) inside the process chamber 2 .

<Electrode part>

1 and 2 , the electrode part 4 is disposed to face the substrate support part 3 . The electrode part 4 may be positioned above the process chamber 2 . The reaction space 100 may be positioned between the electrode part 4 and the substrate support part 3 . The electrode part 4 may inject gas toward the substrate support part 3 . In this case, the electrode part 4 may function as a gas injection part. The gas is used in a processing process for the substrate S, and may be, for example, a source gas and a reaction gas. In this case, the electrode unit 4 may be connected to a gas supply unit (not shown) for supplying gas. The electrode part 4 may generate plasma. Accordingly, the substrate processing apparatus 1 according to the present invention performs a processing process on the substrate S using the gas injected by the electrode unit 4 and the plasma generated by the electrode unit 4 . can In this case, a part of the electrode part 4 may be grounded, and the other part of the electrode part 4 may be electrically connected to a power source (not shown). The power supply may apply RF power.

The electrode part 4 may include a first electrode 41 , a second electrode 42 , an opening 43 , and a protruding electrode 44 .

The first electrode 41 may be installed inside the process chamber 2 to face the substrate S. It may be located above the process chamber 2 . The first electrode 41 may be positioned above the second electrode 42 above the process chamber 2 . The first electrode 41 may be disposed to be spaced apart from the second electrode 42 upward (in the direction of the UD arrow). The first electrode 41 may include a plurality of the protruding electrodes 44 .

The second electrode 42 may be positioned below the first electrode 41 . The second electrode 42 may be disposed to face the substrate support part 3 . The second electrode 42 may be disposed to be spaced apart from the substrate support part 3 upward (in the direction of the UD arrow), and may be disposed to be spaced apart from the first electrode 41 downward (in the direction of the DD arrow). The second electrode 42 may be disposed such that a lower surface 421 faces the substrate support part 3 and an upper surface thereof faces the first electrode 41 . The lower surface of the first electrode 41 and the upper surface of the second electrode 42 may be disposed to be spaced apart from each other in the vertical direction (Z-axis direction). A plurality of openings 43 into which the protruding electrodes 44 are inserted may be formed in the second electrode 42 .

RF power may be applied to any one of the second electrode 42 and the first electrode 41, and the other one may be grounded. For example, RF power may be applied to the second electrode 42 , and the first electrode 41 may be grounded. The second electrode 42 may be grounded, and RF power may be applied to the first electrode 41 .

1 and 2 , the opening 43 may be formed through the second electrode 42 . The opening 43 may pass through the upper surface and the lower surface 421 of the second electrode 42 . The opening 43 may be formed in a cylindrical shape as a whole, but is not limited thereto and may be formed in other shapes such as a rectangular parallelepiped shape. A plurality of openings 43 may be formed in the second electrode 42 . In this case, the openings 43 may be disposed at positions spaced apart from each other. The openings 43 may be disposed to be spaced apart from each other at the same distance.

1 and 2 , the protruding electrode 44 protrudes toward the substrate S. The protruding electrode 44 may extend from the first electrode 41 to the opening 43 formed in the second electrode 42 . The protruding electrode 44 may protrude downward (in the direction of the DD arrow) from the first electrode 41 . The protruding electrode 44 may protrude from a portion of the lower surface of the first electrode 41 located above the opening 43 . That is, the protruding electrode 44 may be disposed at a position corresponding to the opening 43 . The protruding electrode 44 may be coupled to a lower surface of the first electrode 41 . When the first electrode 41 is grounded, the protruding electrode 44 may be grounded through the first electrode 41 . When RF power is applied to the first electrode 41 , RF power may be applied to the protruding electrode 44 through the first electrode 41 . Accordingly, a discharge may be generated by the electric field applied between the protruding electrode 44 and the second electrode 42 to generate plasma. Plasma may be generated between the lower surface 421 of the second electrode 42 and the substrate support part 3 . Plasma may also be generated in the opening 43 .

The electrode part 4 may include a plurality of the protruding electrodes 44 . In this case, the second electrode 42 may include a plurality of the openings 43 . The protruding electrodes 44 may be disposed at positions spaced apart from each other. The protruding electrodes 44 may protrude from portions located above the openings 43 among the lower surfaces of the first electrodes 41 . That is, the protruding electrodes 44 may be disposed at positions corresponding to each of the openings 43 .

The protruding electrodes 44 may be disposed to face the substrate S supported by the substrate support part 3 . In this case, the protruding electrodes 44 may face different portions of the substrate S. The lower surface 421 of the second electrode 42 may also face the substrate S supported by the substrate support part 3 . In this case, one surface of the substrate S may be disposed to face each of the protruding electrodes 44 and the lower surface 421 of the second electrode 42 . One surface of the substrate S may correspond to a surface on which the processing process is performed.

Here, when the protruding electrodes 44 protrude from the first electrode 41 to have the same length as each other, in the process of performing the processing, the processing conditions such as the type of the processing process, the type of gas, the temperature, etc. Due to the partial change in plasma intensity, a deviation may occur. In order to compensate for this difference, in the substrate processing apparatus 1 according to the present invention, the protruding electrodes 44 may be implemented as follows.

1 to 4 , a first protruding electrode 441 disposed in a first area FA among the protruding electrodes 44 and a first area FA among the protruding electrodes 44 and The second protruding electrodes 442 disposed in different second areas SA may protrude to have different lengths. That is, each of the first protruding electrode 441 and the second protruding electrode 442 may have different lengths protruding toward the substrate S.

Accordingly, in the substrate processing apparatus 1 according to the present invention, when a difference in plasma intensity occurs between the first area FA and the second area SA due to process conditions, etc., the first protruding electrode ( A difference in plasma intensity generated between the first area FA and the second area SA may be compensated for by using a difference between the length 441 and the length of the second protruding electrode 442 .

For example, when the length of the first protruding electrode 441 and the length of the second protruding electrode 442 are the same, the generated in the second area SA compared to the first area FA due to process conditions, etc. When the intensity of plasma is reduced, a process environment in which plasma having a stronger intensity is generated in the second area SA than in the first area FA may be implemented. To this end, as shown in FIG. 4 , the first protruding electrode 441 may protrude longer toward the substrate S than the second protruding electrode 442 . Accordingly, the second protruding electrode 442 may protrude shorter than the first protruding electrode 441 toward the substrate S. Accordingly, by increasing the intensity of the plasma generated using the second protruding electrode 442 in the second area SA, the plasma intensity between the second area SA and the first area FA is increased. deviation can be reduced. In this case, a portion corresponding to an edge of the substrate S may be disposed in the second area SA. A portion corresponding to a center of the substrate S may be disposed in the first area FA. The portion corresponding to the edge of the substrate S may be disposed to surround the portion corresponding to the center of the substrate S. The portion corresponding to the center of the substrate S may be disposed inside the portion corresponding to the edge of the substrate S.

For example, if the length of the first protruding electrode 441 and the length of the second protruding electrode 442 are the same, the generated in the first area FA compared to the second area SA due to process conditions, etc. When the intensity of plasma is reduced, a process environment in which plasma having a stronger intensity is generated in the first area FA than in the second area SA may be implemented. To this end, the second protruding electrode 442 may protrude longer toward the substrate S than the first protruding electrode 441. Accordingly, the first protruding electrode 441 is the second protruding electrode ( It may protrude shorter toward the substrate S than 442. Accordingly, by increasing the intensity of plasma generated using the first protruding electrode 441 in the first area FA, the first A variation in plasma intensity between the area FA and the second area SA may be reduced.

As described above, the substrate processing apparatus 1 according to the present invention is implemented to control the intensity of plasma for each region by using the difference between the length of the first protruding electrode 441 and the length of the second protruding electrode 442 . do. Accordingly, the substrate processing apparatus 1 according to the present invention improves the uniformity of plasma intensity over the entire surface of the substrate S facing the electrode part 4, thereby improving the quality of the substrate on which the processing process is completed. can do it

The second area SA may be disposed outside the first area FA. In this case, as shown in FIG. 3 , the second area SA may be disposed outside the first area FA to surround the first area FA. Although not shown, if the second area SA and the first area FA are areas in which a difference in plasma intensity occurs due to process conditions, etc., they may be implemented in different arrangements and shapes from those shown in FIG. 3 . . Meanwhile, in the above description, the lengths of the protruding electrodes 44 are different from each other in the two regions FA and SA, but the present invention is not limited thereto and the lengths of the protruding electrodes 44 are different in three or more regions. it might be Also, although the first electrode 41 is illustrated in a rectangular shape in FIG. 3 , the present invention is not limited thereto, and the first electrode 41 may be formed in various shapes such as a polygonal shape larger than a square or a circular shape.

Referring to FIG. 4 , the first protruding electrode 441 and the second protruding electrode 442 may be inserted into the opening 43 to be positioned inside the second electrode 42 . In this case, in the vertical direction (Z-axis direction), the first protruding electrode 441 and the second protruding electrode 442 have the first electrode 41 and the second electrode 42 respectively. They may protrude longer toward the substrate S than the distance they are spaced apart from each other.

Any one of the first protruding electrode 441 and the second protruding electrode 442 inserted into the opening 43 may be on the same plane as the lower surface 421 of the second electrode 42 . In this case, the lower surface of the first protruding electrode 441 or the lower surface of the second protruding electrode 442 may be disposed at the same height as the lower surface 421 of the second electrode 42 . there is. A lower surface of the longer one of the first protruding electrode 441 and the second protruding electrode 442 may be disposed at the same height as the lower surface 421 of the second electrode 42 . The lower surface of the shorter one among the first protruding electrode 441 and the second protruding electrode 442 is disposed at a higher height than the lower surface 421 of the second electrode 42, so that the second protruding electrode 442 is disposed at a higher height. It may be disposed inside the second electrode 42 .

Referring to FIG. 4 , when the first protruding electrode 441 and the second protruding electrode 442 protrude to have different lengths, the lower surface 421 of the second electrode 42 may be formed flat. there is. That is, the entire lower surface 421 of the second electrode 42 may be disposed at the same height. Accordingly, in controlling the plasma intensity for each region using the difference between the length of the first protruding electrode 441 and the length of the second protruding electrode 442 , the lower surface 421 of the second electrode 42 is ) can be implemented so that it does not affect it.

5 and 6 , the first protruding electrode 441 may include a first injection hole 443 for injecting a first gas. The first injection hole 443 may be formed to pass through the first protruding electrode 441 . The first injection hole 443 may be formed to pass through the first protruding electrode 441 and the first electrode 41 . In this case, after the first gas is injected into the space disposed above the first electrode 41 , the first gas may be injected toward the substrate support part 3 through the first injection hole 443 .

5 and 6 , the second protruding electrode 442 may include a second injection hole 444 for injecting a second gas. The second injection hole 444 may be formed through the second protruding electrode 442 . The second injection hole 444 may be formed to pass through the second protruding electrode 442 and the first electrode 41 . In this case, after the second gas is injected into the space disposed above the first electrode 41 , the second gas may be injected toward the substrate support part 3 through the second injection hole 444 . The second gas and the first gas may be the same gas. The second gas and the first gas may be different gases. In this case, the first injection hole 443 and the second injection hole 444 may be connected to each of the gas passages spatially separated from each other.

The area 443a of the first injection hole 443 and the area 444a of the second injection hole 444 may be formed to be different from each other. Accordingly, the flow rate per unit time of the gas injected into the second area SA through the second injection hole 444 and the gas injected into the first area FA through the first injection hole 443 . The flow rate per unit time of may be implemented to be different from each other. Accordingly, the substrate processing apparatus 1 according to the present invention uses the area difference between the second injection hole 444 and the first injection hole 443 to control the flow rate per unit time of the gas injected for each area. is implemented Therefore, when the second injection hole 444 and the first injection hole 443 are formed to have the same area as each other, the processing rate for the substrate S is partially affected due to process conditions in the process of performing the processing process. , the substrate processing apparatus 1 according to the present invention uses the difference in area between the second injection hole 444 and the first injection hole 443 to provide a processing rate for the substrate S. By compensating for the deviation of , the uniformity of the processing rate with respect to the substrate S may be improved. When the processing process is a deposition process, the processing rate for the substrate S may correspond to the thickness of the thin film deposited on the substrate S.

For example, when the area 443a of the first injection hole 443 and the area 444a of the second injection hole 444 are the same, the second area is compared to the first area FA due to process conditions, etc. When the processing rate for the substrate S is reduced in SA, it is possible to implement a process environment in which gas is injected at a higher flow rate per unit time in the second area SA than in the first area FA. there is. To this end, as shown in FIG. 5 , the area 444a of the second injection hole 444 may be larger than the area 443a of the first injection hole 443 . Accordingly, by increasing the flow rate per unit time at which the gas is injected in the second area SA using the second injection hole 444 , the processing rate of the substrate S in the second area SA is increased. can increase Accordingly, it is possible to reduce a deviation in the processing rate between the first area FA and the second area SA. In this case, the second protruding electrode 442 may protrude shorter toward the substrate S than the first protruding electrode 441 .

For example, when the area 443a of the first injection hole 443 and the area 444a of the second injection hole 444 are the same, the first area compared to the second area SA due to process conditions, etc. When the processing rate for the substrate S is reduced in FA, a process environment in which gas is injected at a higher flow rate per unit time in the first area FA than in the second area SA can be implemented. there is. To this end, as shown in FIG. 6 , the area 443a of the first injection hole 443 may be larger than the area 444a of the second injection hole 444 . Accordingly, by using the first injection hole 443 to increase the flow rate per unit time at which the gas is injected in the first region FA, the processing rate for the substrate S in the first region FA is increased. can increase Accordingly, it is possible to reduce a deviation in the processing rate between the first area FA and the second area SA. In this case, the first protruding electrode 441 may protrude shorter toward the substrate S than the second protruding electrode 442 .

Meanwhile, an area 444a of the second injection hole 444 and an area 443a of the first injection hole 443 may have a horizontal cross-sectional area. The horizontal cross-sectional area may mean a size of an area based on a horizontal direction (X-axis direction) perpendicular to the vertical direction (Z-axis direction).

Meanwhile, a plurality of first protruding electrodes 441 may be disposed in the first area FA. In this case, the first protruding electrodes 441 may protrude toward the substrate S by the same length. A plurality of second protruding electrodes 442 may be disposed in the second area SA. In this case, the second protruding electrodes 442 may protrude toward the substrate S by the same length.

Referring to FIGS. 1 and 7 , in the substrate processing apparatus 1 according to the present invention, the distance at which the second electrode 42 is spaced apart from the substrate support part 3 is implemented differently for each region, so that due to process conditions, etc. It is also possible to partially compensate for the deviation caused by the change in plasma intensity. In this case, the second electrode 42 may be implemented as follows.

Among the second electrodes 42 , the second electrode 422 of the first area FA and the second electrode 423 of the second area SA among the second electrodes 42 are connected to the substrate support part ( 3) can be spaced apart from each other at different distances. In this case, a first distance at which the second electrode 422 of the first area FA is spaced apart from the substrate support part 3 and the second electrode 423 of the second area SA are separated from the substrate support part 3 . The second distance spaced apart from 3) may be implemented to be different from each other. The first distance is spaced apart from a lower surface of the second electrode 422 of the first area FA and an upper surface of the substrate support part 3 based on the vertical direction (Z-axis direction). It can mean distance. The second distance is spaced apart from the lower surface of the second electrode 423 of the second area SA and the upper surface of the substrate support part 3 based on the vertical direction (Z-axis direction). It can mean distance.

Accordingly, in the substrate processing apparatus 1 according to the present invention, when a difference in plasma intensity occurs between the first area FA and the second area SA due to process conditions, the first distance and the A difference in plasma intensity generated between the first area FA and the second area SA may be compensated for by using the difference between the second distances.

For example, if the first distance and the second distance are the same, when the intensity of plasma generated in the second area SA is reduced compared to that of the first area FA due to process conditions, the first area It is possible to implement a process environment in which plasma of a stronger intensity is generated in the second area SA compared to the FA. To this end, as shown in FIG. 7 , the second electrode 423 of the first area FA has a longer distance from the substrate support part 3 than the second electrode 422 of the second area SA. can be spaced apart. Accordingly, the second electrode 423 of the second area SA may be spaced apart from the substrate support part 3 by a shorter distance than the second electrode 422 of the first area FA. In this case, the second electrode 422 of the second area SA may protrude further toward the substrate S than the second electrode 423 of the first area FA. Accordingly, in the second area SA, the intensity of plasma generated by using the portion where the second electrode 423 of the second area SA is formed is increased, and thus the second area SA and the second area SA are formed. It is possible to reduce the variation in plasma intensity between the first regions FA.

For example, if the first distance and the second distance are the same, when the intensity of the plasma generated in the first area FA decreases compared to the second area SA due to process conditions, the second area It is possible to implement a process environment in which plasma having a stronger intensity is generated in the first area FA compared to SA. To this end, the second electrode 422 of the second area SA may be spaced apart from the substrate support part 3 by a longer distance than the second electrode 423 of the first area FA. Accordingly, the second electrode 422 of the first area FA may be spaced apart from the substrate support part 3 by a shorter distance than the second electrode 423 of the second area SA. In this case, the second electrode 423 of the first area FA may be formed to protrude further toward the substrate S than the second electrode 422 of the second area SA. Accordingly, in the first area FA, the intensity of plasma generated by using the portion in which the second electrode 422 of the first area FA is formed is increased, and thus the first area FA and the second electrode 422 are formed. A variation in plasma intensity between the two regions SA may be reduced.

As described above, the substrate processing apparatus 1 according to the present invention is implemented to control the intensity of plasma for each region by using the difference between the first distance and the second distance. Accordingly, the substrate processing apparatus 1 according to the present invention improves the uniformity of plasma intensity over the entire surface of the substrate S facing the electrode part 4, thereby improving the quality of the substrate on which the processing process is completed. can do it On the other hand, in the substrate processing apparatus 1 according to the present invention, the second electrode 422 of the first area FA and the second electrode 423 of the second area SA are directed toward the substrate S. It may be implemented to protrude in different lengths.

1, 3, and 7 , the second area SA may be disposed outside the first area FA. In this case, as shown in FIG. 3 , the second area SA may be disposed outside the first area FA to surround the first area FA. Although not shown, if the second area SA and the first area FA are areas in which a difference in plasma intensity occurs due to process conditions, etc., they may be implemented in different arrangements and shapes from those shown in FIG. 3 . . Meanwhile, in the above description, the distance between the second electrode 42 and the substrate support part 3 is different from each other in the two areas FA and SA, but the present invention is not limited thereto and the second electrode ( 42) and the distance between the substrate support part 3 may be implemented to be different from each other. Also, although the first electrode 41 is illustrated in a rectangular shape in FIG. 3 , the present invention is not limited thereto, and the first electrode 41 may be formed in various shapes such as a polygonal shape larger than a square or a circular shape.

1 and 7 , the second electrode 422 of the first area FA and the second electrode 423 of the second area SA have different distances from the substrate support part 3 , respectively. When spaced apart from each other, the first protruding electrode 441 and the second protruding electrode 442 may protrude to have the same length. That is, both the lower surface of the first protruding electrode 441 and the lower surface of the second protruding electrode 442 may be disposed at the same height. Accordingly, in controlling the plasma intensity for each region using the difference between the first distance and the second distance, the lengths of the first protruding electrode 441 and the second protruding electrode 442 do not have an effect. It can be implemented not to. In this case, the first protruding electrode 441 and the second protruding electrode 442 may be inserted into the opening 43 to be positioned inside the second electrode 42 . The first protruding electrode 441 and the second protruding electrode 442 inserted into the opening 43 may be on the same plane as the lower surface 421 of the second electrode 42 .

1, 8, and 9 , the first protruding electrode 441 may include the first injection hole 443 . The second protruding electrode 442 may include the second injection hole 444 . Since the first injection hole 443 and the second injection hole 444 are substantially the same as those described in the substrate processing apparatus 1 according to the present invention, a detailed description thereof will be omitted.

Meanwhile, a plurality of first protruding electrodes 441 may be disposed in the first area FA. In this case, the first protruding electrodes 441 may protrude toward the substrate S by the same length. A plurality of second protruding electrodes 442 may be disposed in the second area SA. In this case, the second protruding electrodes 442 may protrude toward the substrate S by the same length.

Although not shown, in the substrate processing apparatus 1 according to the present invention, the length of the first protruding electrode 441 and the length of the second protruding electrode 442 are different from each other, and the first distance and the above The second distance may be implemented differently from each other. When it is necessary to increase the plasma intensity in the second area SA than the first area FA, the second protruding electrode 442 is formed shorter than the first protruding electrode 441 and The second distance may be shorter than the first distance. When it is necessary to increase the plasma intensity in the first area FA than in the second area SA, the first protruding electrode 441 is formed shorter than the second protruding electrode 442 and The first distance may be shorter than the second distance. On the other hand, even if the length of the longer one of the first protruding electrode 441 and the second protruding electrode 442 is implemented so as not to protrude downward (in the direction of the DD arrow) from the lower surface 421 of the second electrode 42 . can be

Although not shown, the substrate processing apparatus 1 according to the present invention includes a first protruding electrode 441 disposed in the first area FA and a second protruding electrode 442 disposed in the second area SA. so that they protrude at different lengths, and the second electrode 422 of the first area FA and the second electrode 423 of the second area SA protrude at different lengths toward the substrate S. may be implemented.

For example, the first protruding electrode 441 protrudes longer than the second protruding electrode 442 , and the second electrode 422 of the first area FA is a second protrusion of the second area SA. It may protrude longer than the electrode 423 . For example, the first protruding electrode 441 protrudes longer than the second protruding electrode 442 , and the second electrode 423 in the second area SA is disposed in the second area of the first area FA. It may protrude longer than the electrode 422 .

For example, the second protruding electrode 442 protrudes longer than the first protruding electrode 441 , and the second electrode 422 of the first area FA is a second protrusion of the second area SA. It may protrude longer than the electrode 423 . For example, the second protruding electrode 442 protrudes longer than the first protruding electrode 441 , and the second electrode 423 of the second area SA is a second protrusion of the first area FA. It may protrude longer than the electrode 422 .

As such, the first protruding electrode 441 disposed in the first area FA and the second protruding electrode 442 disposed in the second area SA protrude to have different lengths, and the first area The second electrode 422 of the FA and the second electrode 423 of the second area SA are implemented to protrude at different lengths toward the substrate S, so that the substrate processing apparatus 1 according to the present invention ) can not only improve the diversity of plasma control for each region, but also improve the ease and accuracy of plasma control for each region.

Referring to FIG. 10 , a substrate processing apparatus 1 according to a modified embodiment of the present invention performs a processing process on a substrate S. Referring to FIG. The substrate processing apparatus 1 according to the modified embodiment of the present invention may include a process chamber 2 , a substrate support unit 3 , and a gas injection unit 5 . Since the process chamber 2 and the substrate support part 3 are substantially identical to those described in the substrate processing apparatus 1 according to the present invention, a detailed description thereof will be omitted.

10 and 11 , the gas injection unit 5 is disposed to face the substrate support unit 3 . The gas injection unit 5 may be located above the process chamber 2 . The reaction space 100 may be positioned between the gas injection part 5 and the substrate support part 3 . The gas ejection unit 5 may inject gas toward the substrate support unit 3 . The gas is used in a processing process for the substrate S, and may be, for example, a source gas and a reaction gas. In this case, the gas injection unit 5 may be connected to a gas supply unit (not shown) for supplying gas.

The gas injection unit 5 may include a first injection plate 51 , a second injection plate 52 , an injection hole 53 , and a protrusion passage 54 .

The first injection plate 51 may be installed inside the process chamber 2 to face the substrate S. It may be located above the process chamber 2 . The first injection plate 51 may be located above the second injection plate 52 above the process chamber 2 . The first injection plate 51 may be disposed to be spaced apart from the second injection plate 52 upward (in the direction of the UD arrow). The first injection plate 51 may include a plurality of the projecting passages 54 for injecting the first gas.

The second injection plate 52 may be located below the first injection plate 51 . The second injection plate 52 may be disposed to face the substrate support part 3 . The second injection plate 52 may be disposed to be spaced apart from the substrate support part 3 upward (in the direction of the UD arrow), and may be disposed to be spaced apart from the first injection plate 51 downward (in the direction of the DD arrow). . The second injection plate 52 may be disposed such that a lower surface 421 faces the substrate support 3 and an upper surface thereof faces the first injection plate 51 . A lower surface of the first injection plate 51 and an upper surface of the second injection plate 52 may be disposed to be spaced apart from each other in the vertical direction (Z-axis direction). A plurality of injection holes 53 may be formed in the second injection plate 52 .

10 and 11 , the injection hole 53 injects the second gas. The injection hole 53 may be formed through the second injection plate 52 . The injection hole 53 may pass through the upper surface and the lower surface 521 of the second injection plate 52 . After the second gas is supplied between the first injection plate 51 and the second injection plate 52 through the first connection hole 511 formed in the first injection plate 51, the injection hole It may be sprayed toward the substrate (S) through the (53). The first connection hole 511 may be formed through the first injection plate 51 . The first connection hole 511 may be disposed at a position corresponding to a portion of the second injection plate 52 in which the injection hole 53 is not formed. The injection hole 53 may be formed in a cylindrical shape as a whole, but is not limited thereto and may be formed in other shapes such as a rectangular parallelepiped shape. A plurality of the injection holes 53 may be formed in the second injection plate 52 . In this case, the injection holes 53 may be disposed at positions spaced apart from each other. The injection holes 53 may be disposed to be spaced apart from each other at the same distance.

Referring to FIGS. 10 and 11 , the protrusion passage 54 injects the first gas. The first gas and the second gas may be different gases. For example, if the first gas is a source gas, the second gas may be a reaction gas. When the first gas is a reaction gas, the first gas may be a source gas.

The protrusion passage 54 may protrude toward the substrate S. The protrusion passage 54 may extend from the first injection plate 51 to the injection hole 53 formed in the second injection plate 52 . The protrusion passage 54 may be inserted into the injection hole 53 . The protrusion passage 54 may protrude downward (in the direction of the DD arrow) from the first injection plate 51 . The protrusion passage 54 may protrude from a portion located above the injection hole 53 among the lower surface of the first injection plate 51 . That is, the protrusion passage 54 may be disposed at a position corresponding to the injection hole 53 . The protrusion passage 54 may be coupled to a lower surface of the first injection plate 51 .

The gas injection unit 5 may include a plurality of the projecting passages 54 . In this case, the second injection plate 52 may include a plurality of the injection holes 53 . The protrusion passages 54 may be disposed at positions spaced apart from each other. The protrusion passages 54 may protrude from portions located above the injection holes 53 among the lower surfaces of the first injection plate 51 . That is, the protrusion passages 54 may be disposed at positions corresponding to the injection holes 53 , respectively.

The protrusion passages 54 may be disposed to face the substrate S supported by the substrate support unit 3 . In this case, the protrusion passages 54 may face different portions of the substrate S. The lower surface 521 of the second injection plate 52 may also face the substrate S supported by the substrate support part 3 . In this case, one surface of the substrate S may be disposed to face each of the protrusion passages 54 and the lower surface 521 of the second injection plate 52 . One surface of the substrate S may correspond to a surface on which the processing process is performed.

Here, when the protruding passages 54 protrude from the first injection plate 51 to have the same length as each other, in the process of performing the treatment process, process conditions such as the type of the treatment process, the type of gas, the temperature, etc. Due to this, the pressure and flow rate of the gas partially change, which may cause a deviation. In order to compensate for this difference, in the substrate processing apparatus 1 according to the modified embodiment of the present invention, the protruding passages 54 may be implemented as follows.

10 to 14 , a first protrusion passage 541 disposed in a first area FA among the protrusion passages 54 and the first area FA among the protrusion passages 54 and The second protrusion passages 542 disposed in different second areas SA may protrude to have different lengths. That is, each of the first protrusion passage 541 and the second protrusion passage 542 may have different lengths protruding toward the substrate S.

Accordingly, in the substrate processing apparatus 1 according to the modified embodiment of the present invention, when a difference occurs in the pressure and flow rate of gas between the first area FA and the second area SA due to process conditions, etc. , the difference in pressure and flow rate of gas generated between the first area FA and the second area SA using the difference between the length of the first protrusion passage 541 and the length of the second protrusion passage 542 . can be compensated for

For example, when the length of the first protrusion channel 541 and the length of the second protrusion channel 542 are the same, the length of the second protrusion channel 542 is equal to that of the second area SA compared to the first area FA due to process conditions. When the pressure and flow rate of the gas are reduced, a process environment in which the pressure and flow rate of the gas injected into the second area SA is further increased compared to the first area FA may be implemented. To this end, as shown in FIG. 13 , the second protrusion passage 542 may protrude longer toward the substrate S than the first protrusion passage 541 . Accordingly, by increasing the pressure and flow rate of the gas injected into the second area SA using the second protrusion passage 542 , the gas between the second area SA and the first area FA is increased. It is possible to reduce the deviation of pressure and flow rate.

For example, if the length of the first protrusion channel 541 and the length of the second protrusion channel 542 are the same, the length of the first protrusion channel 542 is equal to that of the first area FA compared to the second area SA due to process conditions. When the pressure and flow rate of the gas are reduced, a process environment in which the pressure and flow rate of the gas injected into the first area FA is increased compared to the second area SA may be implemented. To this end, as shown in FIG. 14 , the first protrusion passage 541 may protrude longer toward the substrate S than the second protrusion passage 542 . Accordingly, by increasing the pressure and flow rate of the gas injected into the first area FA using the first protrusion passage 541 , the gas between the first area FA and the second area SA is increased. It is possible to reduce the deviation of pressure and flow rate.

As described above, the substrate processing apparatus 1 according to the modified embodiment of the present invention uses the difference between the length of the first protrusion passage 541 and the length of the second protrusion passage 542 to determine the pressure and It is implemented to control the flow rate. Accordingly, the substrate processing apparatus 1 according to a modified embodiment of the present invention improves the uniformity of the pressure and flow rate of the gas over the entire surface of the substrate S facing the gas injection unit 5, It is possible to improve the quality of the substrate on which the processing process is completed.

The second area SA may be disposed outside the first area FA. In this case, as shown in FIG. 12 , the second area SA may be disposed outside the first area FA to surround the first area FA. Although not shown, if the second area SA and the first area FA are areas where a difference in gas pressure and flow rate occurs due to process conditions, etc., they are implemented in different arrangements and shapes from those shown in FIG. 12 . it might be Meanwhile, in the above description, the lengths of the protrusion passages 54 are different from each other in the two areas FA and SA, but the present invention is not limited thereto and the lengths of the projecting passages 54 are different in three or more areas. it might be In addition, although the first injection plate 51 is illustrated in a rectangular shape in FIG. 12 , the present invention is not limited thereto, and the first injection plate 51 may be formed in various shapes such as a polygonal shape of more than a square, a circle shape, and the like.

13 and 14 , the first protrusion passage 541 and the second protrusion passage 542 may be inserted into the injection hole 53 and positioned inside the second injection plate 52 . there is. In this case, based on the vertical direction (Z-axis direction), the first protrusion passage 541 and the second protrusion passage 542 are respectively the first injection plate 51 and the second injection plate 52 . ) may protrude longer toward the substrate S than the distance they are spaced apart from each other.

Any one of the first protrusion passage 541 and the second protrusion passage 542 inserted into the injection hole 53 may be on the same plane as the lower surface 521 of the second injection plate 52 . In this case, the lower surface of the first protrusion passage 541 or the lower surface of the second protrusion passage 542 may be disposed at the same height as the lower surface 521 of the second injection plate 52 . can A lower surface of the longer one of the first protrusion passage 541 and the second protrusion passage 542 may be disposed at the same height as the lower surface 521 of the second injection plate 52 . The lower surface of the shorter one among the first protrusion passage 541 and the second protrusion passage 542 is disposed at a higher height than the lower surface 521 of the second injection plate 52, so that the It may be disposed inside the second injection plate (52). Meanwhile, both the first protrusion passage 541 and the second protrusion passage 542 inserted into the injection hole 53 may be on the same plane as the lower surface 521 of the second injection plate 52 .

13 and 14 , when the first protrusion passage 541 and the second protrusion passage 542 protrude to have different lengths, the lower surface 521 of the second injection plate 52 is flat. can be formed. That is, all of the lower surface 521 of the second injection plate 52 may be disposed at the same height. Accordingly, in controlling the pressure and flow rate of gas for each area using the difference between the length of the first protrusion passage 541 and the length of the second protrusion passage 542 , the second injection plate 52 It may be implemented so that the lower surface 521 does not affect it.

13 and 14 , the first protrusion passage 541 may include a first injection hole 543 for injecting the first gas. The first injection hole 543 may be formed through the first protrusion passage 541 . The first injection hole 543 may be connected to a second connection hole 512 formed in the first injection plate 51 . The second connection hole 512 may be formed through the first injection plate 51 . In this case, after the first gas is injected into the space disposed above the first injection plate 51 , the substrate support part 3 is passed through the second connection hole 512 and the first injection hole 543 . ) can be sprayed. The second connection hole 512 and the first connection hole 511 may be formed to be spatially separated from each other.

13 and 14 , the second protrusion passage 542 may include a second injection hole 544 for injecting the first gas. The second injection hole 544 may be formed through the second protrusion passage 542 . The second injection hole 544 may be connected to the second connection hole 512 formed in the first injection plate 51 . In this case, after the first gas is injected into the space disposed above the first injection plate 51 , the substrate support part 3 is passed through the second connection hole 512 and the second injection hole 544 . ) can be sprayed.

Meanwhile, a plurality of first protrusion passages 541 may be disposed in the first area FA. In this case, the first protrusion passages 541 may protrude toward the substrate S by the same length. A plurality of second protrusion passages 542 may be disposed in the second area SA. In this case, the second protrusion passages 542 may protrude toward the substrate S by the same length.

The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and it is common in the technical field to which the present invention pertains that various substitutions, modifications and changes are possible within the scope without departing from the technical spirit of the present invention. It will be clear to those who have the knowledge of

1: substrate processing apparatus 2: process chamber
3: substrate support part 4: electrode part
41: first electrode 42: second electrode
421: lower surface 422: second electrode of the first region
423: second electrode of the second region 43: opening
44: protruding electrode 441: first protruding electrode
442: second protruding electrode 443: first injection hole
444: second injection hole 5: gas injection unit
51: first injection plate 511: first connection hole
512: second connection hole 52: second injection plate
521: bottom 53: injection hole
54: protrusion flow passage 541: first projecting passage
542: second protrusion passage 543: first injection hole
544: second injection hole S: substrate
FA: First realm SA: Second realm

Claims (19)

a process chamber providing a reaction space for processing the substrate;
a substrate support for supporting the substrate;
a first electrode installed inside the process chamber to face the substrate and including a plurality of protruding electrodes protruding toward the substrate; and
a second electrode positioned below the first electrode and having a plurality of openings into which the protruding electrode is inserted;
Among the protruding electrodes, a first protruding electrode disposed in a first region and a second protruding electrode disposed in a second region outside the first region protrude to have different lengths. According to claim 1,
and the first protruding electrode protrudes longer toward the substrate than the second protruding electrode. According to claim 1,
wherein the second protruding electrode protrudes longer toward the substrate than the first protruding electrode. According to claim 1,
The first protruding electrode includes a first injection hole for injecting a first gas,
The second protruding electrode includes a second injection hole for injecting a second gas,
The substrate processing apparatus, characterized in that the area of the first injection hole and the second injection hole are different from each other. According to claim 1,
Any one of the first protruding electrode and the second protruding electrode inserted into the opening is on the same plane as a lower surface of the second electrode. According to claim 1,
Among the second electrodes, the second electrode of the first region and the second electrode of the second region protrude to the substrate by different lengths. a process chamber providing a reaction space for processing the substrate;
a substrate support for supporting the substrate;
a first electrode installed inside the process chamber to face the substrate and including a plurality of protruding electrodes protruding toward the substrate; and
a second electrode positioned below the first electrode and having a plurality of openings into which the protruding electrode is inserted;
Among the second electrodes, a second electrode in a first region and a second electrode in a second region outside the first region are spaced apart from each other by different distances from the substrate support part. 8. The method of claim 7,
The second electrode of the first region is spaced apart from the substrate support by a longer distance than the second electrode of the second region. 8. The method of claim 7,
The second electrode of the second region is spaced apart from the substrate support by a longer distance than the second electrode of the first region. 8. The method of claim 7,
Among the protruding electrodes, the first protruding electrode disposed in the first region includes a first spray hole for spraying a first gas,
A second protruding electrode disposed in the second region among the protruding electrodes includes a second injection hole for injecting a second gas,
The substrate processing apparatus, characterized in that the area of the first injection hole and the second injection hole are different from each other. 11. The method of claim 4 or 10,
The substrate processing apparatus, characterized in that the area of the first injection hole is formed to be larger than the area of the second injection hole. 11. The method of claim 4 or 10,
The substrate processing apparatus, characterized in that the area of the second injection hole is formed to be larger than the area of the first injection hole. 11. The method of claim 4 or 10,
The area is a substrate processing apparatus, characterized in that the horizontal cross-sectional area. 11. The method of claim 10,
At least one of the first protruding electrode and the second protruding electrode inserted into the opening is flush with a lower surface of the second electrode. 11. The method of claim 7 or 10,
Among the protruding electrodes, the first protruding electrode disposed in the first region and the second protruding electrode disposed in the second region protrude to have different lengths. 11. The method of claim 10,
Among the protruding electrodes, the first protruding electrode disposed in the first region and the second protruding electrode disposed in the second region protrude to have the same length as each other. a process chamber providing a reaction space for processing the substrate;
a substrate support for supporting the substrate;
a first injection plate installed in the process chamber to face the substrate, the first injection plate protruding toward the substrate and including a plurality of projection passages for injecting a first gas; and
It is located below the first injection plate, the protrusion passage is inserted, including a second injection plate formed with a plurality of injection holes for injecting a second gas,
The substrate processing apparatus of claim 1 , wherein a first protrusion channel disposed in a first area and a second protrusion channel disposed in a second area outside the first area among the protrusion channels protrude to have different lengths. 18. The method of claim 17,
The substrate processing apparatus according to claim 1, wherein the first protrusion passage protrudes longer toward the substrate than the second protrusion passage. 18. The method of claim 17,
The substrate processing apparatus according to claim 1, wherein the second protrusion passage protrudes longer toward the substrate than the first protrusion passage.

Images